M429709 五、新型說明： 【新型所屬之技術領域】 本創作係有關一種發光二極體改良，旨在提供一種可有 效降低磊晶層差排密度，可有效提升發光效率之發光二極體 改良。 【先前技術】 • 目前氮化鎵系發光二極體所產生的發光效率（light extraction efficiency)問題，主因通常在於用來磊晶成長 氮化鎵系材料之碳化矽或藍寶石基板，其晶格常數與氮化鎵 糸材料的晶格常數不相匹配，或是氮化鎵系材料在此等基板 上磊晶成長機制的問題，造成以氮化鎵系材料自基板依序磊 晶成長彼覆層（cladding layer)、作動層（active layer)時， 例如差排（dislocation)等晶體缺陷（defects)隨之累積生成 在作動層巾’錢㈣部量子效率將目大量的差排密度而大 鲁幅地降低，進而影響到發光二極體的發光效率。 為了克服上述問題，日本特開平6_196757發明專利案 提出選用-晶格常數介於基板、氮化鎵系材料之間的材料， 於基板上先低溫蟲晶成長出緩衝層，接著再 依序自緩衝層上蟲晶成長披覆層、作動層以減少基板本身 直接累積生成在作動層中’同時減少因蟲晶成長 機制本身產生缺陷的機率，進而改善發光二極體的發光效率。 曰=而此種方式雖然可以減少基板本身的晶體缺陷因羞 曰曰過知直接累積生成在發光二極體的作動層中，並可減少蟲 3 M429709 明顯，並無 晶成長機制本身產生缺陷的機率，但是效果仍不 法有效改善發光二極體的發光效率。 【新型内容】 有鑑於此，本創作之主要目的提供一種發光二極體改 良，旨在提供一種可有效降低磊晶層差排密度， 光二極體的發光效率。 ’^升 為達上揭目的，本創作之發光二極體至少設有—美板， 以及依序設於該基板上之緩衝層、第一半導體層、發二層、 第二半導體層；其中：該基板上設有複數第—圖案^構:該 緩衝層係覆蓋設置於各第一圖案結構上’而該緩衝^上設^ 複數第二圖案結構，各第一、第二圖案結構係於軸:方向之 相對位置處’且各第一、第二圖案結構之圖形互為互補；藉 此，用以解決基板與緩衝層間晶格不匹配度大之問題，而具 有降低蟲晶層差排雄、度以提南結晶品質’藉此改善發光亮度 之功效◊ 【實施方式】 本創作之特點可參閱本案圖式及實施例之詳細說明而 獲得清楚地瞭解。 本創作之潑;光二極體改良如第一圖之第一實施例所示， ·» 該發光二極體2至少設有一基板21’以及依序設於該基板上之 緩衝層22、第一半導體層23、發光層24、第二半導體層25以 及第一、第二電極26、27，該發光層24係設於部分之該第一 半導體層23，而該第一電極26係設於未覆蓋有發光層24之第= M429709 一半導體層23上，該第二電極27則設於該第二半導體層25 上；其中，該基板可以為藍寶石基板，該緩衝層可以為低摻 雜氮化鎵（u-GaN)層，該第一半導體層是一η型半導體層，該 第二半導體層是一Ρ型半導體層，或是，該第一半導體層是一 Ρ型半導體層，該第二半導體層是一η型半導體層。 ； 本案之重點在於：該基板21上設有複數第一圖案結構 -211，該緩衝層22係覆蓋設置於各第一圖案結構211上，而該 緩衝層22上設有複數第二圖案結構221，各第一、第二圖案結 鲁構211、221係於軸向方向Τ1之相對位置處，且各第一、第二 圖案結構211、221之圖形互為互補，如圖所示之實施例中， 各第一圖案結構211係突出於該基板22表面，各第二圖案結構 221係形成互補圖形而凹入於該緩衝層22表面，且各第一、第 二圖案結構211、221可以為錐狀結構體（可為角錐狀或弧錐 狀）；如第二圖及第三圖所示之實施例中，各第一圖案結構211 可以為突出於該基板22表面之角錐狀結構體，而各第二圖案 結構221可以為凹入於該緩衝層22表面之角錐狀結構體。 * 當然，各第一圖案結構211係凹入於該基板21表面，各第 二圖案結構221係形成互補圖形而突出於該緩衝層22表面，如 第四圖之第二實施例所示，各第一、第二圖案結構211、221 可以為弧狀結構體；亦或者，各第一、第二圖案結構可以為 多邊形結構體，或其他幾何圖形。 是以，本創作利用各第一、第二圖案結構之技術特徵， 得以解決基板與緩衝層間晶格不匹配度大之問題；而確具降 低磊晶層差排密度以提高結晶品質，藉此改善發光亮度之功 M429709 再者，該發光二極體之結構組成亦可如第五圖所示，_ 第一電極26係設於該第二半導體層25上，該第二電極27係設 於該基板21另一面。 綜上所述，本創作提供一較佳可行之發光二極體改良， 爰依法提呈新型專利之申請；本創作之技術内容及技術特點 已揭示如上，然而熟悉本項技術之人士仍可能基於本創作之 揭示而作各種不背離本案創作精神之替換及修飾。因此，本 創作之保護範圍應不限於實施例所揭示者，而應包括各種不 背離本創作之替換及修飾，並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 ; 第一圖係為本創作t第一實施例發光二極體之結構示意 圖。 第二圖係為本創作中第一實施例基板之部分放大示意 圖。 第三圖係為本創作令第一實施例緩衝層之部分放大示意 圖。 第四圖係為本創作令第二實施例發光二極體之結構示意 圖。 第五圖係為本創作中第三實施例發光二極體之結構示意 圖。 【主要元件符號說明】 轴向方向T1 發光二極體2 M429709 基板21 第一圖案結構211 緩衝層22 第二圖案結構221 第一半導體層23 發光層24 第二半導體層25 第一電極26 第二電極27M429709 V. New Description: [New Technology Field] This creation is about the improvement of a light-emitting diode. It aims to provide a light-emitting diode that can effectively reduce the epitaxial layer density and effectively improve the luminous efficiency. [Prior Art] • At present, the problem of light extraction efficiency generated by gallium nitride-based light-emitting diodes is mainly due to the lattice constant of a tantalum carbide or sapphire substrate used for epitaxial growth of gallium nitride-based materials. The lattice constant of the material of the gallium nitride ruthenium material does not match, or the problem of the epitaxial growth mechanism of the gallium nitride-based material on the substrate causes the gallium nitride-based material to sequentially epitaxially grow from the substrate to the cladding layer. When a cladding layer or an active layer is used, for example, crystal defects such as dislocation are accumulated to generate a large amount of difference in the quantum efficiency of the active layer towel. The ground is lowered, which in turn affects the luminous efficiency of the light-emitting diode. In order to overcome the above problems, the Japanese Patent Application Laid-Open No. Hei 6_196757 proposes to select a material having a lattice constant between a substrate and a gallium nitride-based material, and to grow a buffer layer on the substrate first, and then self-buffering in sequence. The layer of insect crystal grows on the coating layer and the actuation layer to reduce the direct accumulation of the substrate itself in the actuation layer, and at the same time reduces the probability of defects caused by the growth mechanism of the insect crystal itself, thereby improving the luminous efficiency of the light-emitting diode.曰 = while this method can reduce the crystal defects of the substrate itself due to shyness and direct accumulation in the active layer of the light-emitting diode, and can reduce the obviousness of the insect 3 M429709, no crystal growth mechanism itself produces defects Probability, but the effect is still not effective to improve the luminous efficiency of the light-emitting diode. [New content] In view of this, the main purpose of this creation is to provide a light-emitting diode improvement, which aims to provide a luminous efficiency that can effectively reduce the epitaxial layer density and the light diode. '^升为达上上, the light-emitting diode of the present invention is provided with at least a slab, and a buffer layer, a first semiconductor layer, a second layer, and a second semiconductor layer which are sequentially disposed on the substrate; The substrate is provided with a plurality of first pattern structures: the buffer layer is disposed on each of the first pattern structures, and the buffer layer is provided with a plurality of second pattern structures, and each of the first and second pattern structures is The axis: the relative position of the direction is 'and the patterns of the first and second pattern structures are complementary to each other; thereby, the problem of large lattice mismatch between the substrate and the buffer layer is solved, and the layer difference of the insect crystal layer is reduced. The effect of improving the luminescence brightness by the crystallization quality of the singularity of the sputum ◊ [Embodiment] The characteristics of the creation can be clearly understood by referring to the detailed description of the drawings and the examples. In the first embodiment of the first embodiment, the light-emitting diode 2 is provided with at least one substrate 21' and a buffer layer 22 sequentially disposed on the substrate, first a semiconductor layer 23, a light-emitting layer 24, a second semiconductor layer 25, and first and second electrodes 26 and 27, the light-emitting layer 24 is disposed on a portion of the first semiconductor layer 23, and the first electrode 26 is disposed in the The second electrode 27 is disposed on the second semiconductor layer 25, and the second electrode 27 is disposed on the second semiconductor layer 25. The substrate may be a sapphire substrate, and the buffer layer may be low-doped nitrided. a gallium (u-GaN) layer, the first semiconductor layer is an n-type semiconductor layer, the second semiconductor layer is a germanium-type semiconductor layer, or the first semiconductor layer is a germanium-type semiconductor layer, the second The semiconductor layer is an n-type semiconductor layer. The focus of the present invention is that the substrate 21 is provided with a plurality of first pattern structures 211, the buffer layer 22 is disposed on each of the first pattern structures 211, and the buffer layer 22 is provided with a plurality of second pattern structures 221 The first and second pattern structures 211 and 221 are at opposite positions of the axial direction Τ1, and the patterns of the first and second pattern structures 211 and 221 are complementary to each other, as shown in the embodiment. Each of the first pattern structures 211 protrudes from the surface of the substrate 22, and each of the second pattern structures 221 forms a complementary pattern and is recessed on the surface of the buffer layer 22, and each of the first and second pattern structures 211, 221 may be The tapered structure (which may be pyramidal or arcuate); in the embodiment shown in the second and third figures, each of the first pattern structures 211 may be a pyramidal structure protruding from the surface of the substrate 22, Each of the second pattern structures 221 may be a pyramidal structure recessed on the surface of the buffer layer 22 . * Of course, each of the first pattern structures 211 is recessed on the surface of the substrate 21, and each of the second pattern structures 221 forms a complementary pattern and protrudes from the surface of the buffer layer 22, as shown in the second embodiment of the fourth figure. The first and second pattern structures 211, 221 may be arc-shaped structures; or each of the first and second pattern structures may be a polygonal structure, or other geometric figures. Therefore, the present invention utilizes the technical features of the first and second pattern structures to solve the problem of large lattice mismatch between the substrate and the buffer layer; and it is possible to reduce the epitaxial layer density to improve the crystal quality. The function of improving the brightness of the light is M429709. The structure of the light-emitting diode can also be as shown in the fifth figure. The first electrode 26 is disposed on the second semiconductor layer 25, and the second electrode 27 is disposed on the second electrode 27. The other side of the substrate 21. In summary, the present invention provides a better and feasible LED replacement, and the application for a new patent is proposed according to law; the technical content and technical features of the creation have been disclosed above, but those familiar with the technology may still be based on The disclosure of this creation is a variety of alternatives and modifications that do not depart from the spirit of the creation of this case. Therefore, the scope of protection of the present invention is not limited to the embodiments disclosed, but includes various alternatives and modifications that do not depart from the present invention and are covered by the following claims. [Simple description of the drawing] The first figure is a schematic diagram of the structure of the light-emitting diode of the first embodiment of the present invention. The second drawing is a partially enlarged schematic view of the substrate of the first embodiment in the creation. The third figure is a partially enlarged schematic view of the buffer layer of the first embodiment of the present invention. The fourth figure is a schematic view of the structure of the light-emitting diode of the second embodiment of the present invention. The fifth figure is a schematic view of the structure of the light-emitting diode of the third embodiment in the present creation. [Main component symbol description] Axial direction T1 Light-emitting diode 2 M429709 Substrate 21 First pattern structure 211 Buffer layer 22 Second pattern structure 221 First semiconductor layer 23 Light-emitting layer 24 Second semiconductor layer 25 First electrode 26 Second Electrode 27