CN103985803A - Nitride LED component - Google Patents
Nitride LED component Download PDFInfo
- Publication number
- CN103985803A CN103985803A CN201410183738.6A CN201410183738A CN103985803A CN 103985803 A CN103985803 A CN 103985803A CN 201410183738 A CN201410183738 A CN 201410183738A CN 103985803 A CN103985803 A CN 103985803A
- Authority
- CN
- China
- Prior art keywords
- layer
- contact layer
- iii
- light emitting
- emitting devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 title abstract description 12
- 229910002601 GaN Inorganic materials 0.000 abstract description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000003068 static effect Effects 0.000 abstract 2
- 238000004630 atomic force microscopy Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
With expansion of application of nitride semiconductor components, except high brightness, importance of lowering component operating voltage and improving static voltage withstanding is improved too. The invention provides a nitride LED component, a highly-doped conical contact layer grows on a p-type gallium nitride contact layer, the conical contact layer discontinuously grows and provides low contact resistance, component operating voltage is lowered, and the static voltage withstanding ability is improved.
Description
Technical field
The present invention relates to nitride semiconductor light electric device, relate in particular to a kind of nitride semiconductor light electric device that improves p-type contact layer structure that has.
Background technology
In recent years, light-emitting diode (LED) assembly focuses on luminance raising, and expectation can be applied to lighting field, to bring into play effect of carbon reduction.In general, LED assembly comprises: have and in Sapphire Substrate, form nitride resilient coating, by the N-shaped contact layer of Si Doped GaN, by multi-layer quantum well construction (the MQW:Multi-Quant μ m-Well) active layer with InGaN, the AlGaN electronic barrier layer being adulterated by Mg, the p-type nitride contact layer being adulterated by Mg stacks gradually the structure forming, and this structure has the semiconductor subassembly characteristic of higher brightness.
Along with nitride-based semiconductor component application expands, except having high brightness, reduce assembly operation voltage and also improve with the importance that improves electrostatic withstand voltage thereupon.
Summary of the invention
For prior art, for lower assembly operation voltage and raising electrostatic withstand voltage is provided, nitride-based semiconductor assembly object of the present invention is: provide a kind of highly doped taper contact layer as p-type contact layer, to reduce the contact resistance between electrode and p-type layer, this highly doped taper contact layer and electrode form good ohmic contact, to improve component characteristic.
In order to achieve the above object, above-mentioned p-type layer comprises the first p-type layer and the second p-type layer, and wherein the second p-type layer growth is on the first p-type layer.Further, the second p-type layer comprises smooth contact layer and taper contact layer from bottom to up, and its taper contact layer is highly doped taper portion, is discontinuous growth.
Preferably, the second p-type layer doping content is compared with the first p-type floor height.
Preferably, the first p-type layer doping content is 1 × 10
18/ cm
3~ 5 × 10
19/ cm
3.
Preferably, the second p-type layer doping content is greater than 5 × 10
19/ cm
3, be no more than 5 × 10
21/ cm
3.
Preferably, the thickness of highly doped taper contact layer is less than or equal to 200, so that forward voltage does not rise.
Preferably, in order to obtain good p-type electric-conducting, highly doped its doped chemical of taper contact layer is preferably Mg.
Preferably, the tapered diameter (a) of highly doped taper contact layer, lateral dimension is between 0.1 μ m and 2 μ m.
Preferably, the tapered height (b) of highly doped taper contact layer, longitudinal size is between 0.1nm and 10nm.
Preferably, the coverage rate of highly doped taper contact layer is 5% to 100%, and it accounts for the area ratio of the smooth contact layer of described the second p-type layer.
Preferably, the operative tip of taper contact layer is platform.
Brief description of the drawings
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, for explaining the present invention, is not construed as limiting the invention together with embodiments of the present invention.In addition, accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is the iii-nitride light emitting devices end view of the embodiment of the present invention.
Fig. 2 is the 2D analysis chart of Atomic force microscopy (AFM) 20 × 20 μ m of the embodiment of the present invention.
Fig. 3 is the 3D analysis chart of Atomic force microscopy (AFM) 20 × 20 μ m of the embodiment of the present invention.
In figure, indicate
1. substrate; 2. resilient coating; 3.n type layer; 4. stress release layer; 5. Multiple Quantum Well active area (active layer); 61. first p-type layers; 62. second p-type layers; The smooth contact layer of 62a.; 62b. taper contact layer; A. tapered diameter; B. tapered height.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is elaborated.
Embodiment
Please refer to accompanying drawing 1, grown buffer layer 2 on substrate 1, then growing n-type layer 3 on resilient coating 2, growth stress releasing layer 4 on N-shaped layer 3 again, then the Multiple Quantum Well active area 5 of growing on stress release layer 4, then first p-type layer 61, the second p-type layer 62 of growing on Multiple Quantum Well active area 5 grow on the first p-type layer 61, and wherein the second p-type layer 62 comprises smooth contact layer 62a and taper contact layer 62b from bottom to up.
Specifically, substrate 1 material can be selected alumina single crystal (Sapphire) or SiC (6H-SiC or 4H-SiC) or Si or GaAs or GaN etc., lattice constant (lattice constant) also comprises wherein close to the monocrystalline oxide of nitride-based semiconductor, preferably uses Sapphire.
And then, resilient coating 2 is positioned on described substrate 1, and its material is aluminum indium gallium nitride (Al
1-x-yga
xin
yn), 0≤x <, 1,0≤y < 1 wherein, be positioned at the N-shaped gallium nitride layer 3 on resilient coating 2, be positioned at the stress release layer 4 on N-shaped gallium nitride layer 3, this stress release layer 4 is InGaN or InGaN/gallium nitride superlattice structure, be positioned at the active layer 5 on stress release layer 4, its material is InGaN, be positioned at the first p-type layer 6 on active layer 5, its material is the gallium nitride of magnesium doping (Mg-doped), thickness is between 100 to 4000, growth temperature is between 800 DEG C to 1000 DEG C, be positioned at the second p-type layer 62 on the first p-type layer 61, its growth temperature is between 700 DEG C to 900 DEG C, the second p-type layer 62 thickness are less than or equal to 200.
The nitride-based semiconductor assembly of present embodiment is the first p-type layer 61 by magnesium doping (Mg-doped) GaN by its material, and its growth temperature is between 800 DEG C to 1000 DEG C, and doping content is preferably 1 × 10
18/ cm
3to 5 × 10
19/ cm
3, its material of the present invention is by the 2nd P type layer 62 of magnesium doping (Mg-doped) GaN, and its growth temperature is between 700 DEG C to 900 DEG C, and doping content is preferably greater than 5 × 10
19/ cm
3, but be no more than 5 × 10
21/ cm
3, gallium nitride light-emitting diode carries out Atomic force microscopy(AFM after growing up) scanning analysis, scanning length and width are 20 × 20 μ m, depth is positive and negative 7nm, as shown in Figure 2, the irregular bright spot on the second p-type layer 62 surface is taper contact layer 62b, as shown in the 3D schematic diagram of Fig. 3, known protrusion is that taper (it is to be noted, because taper thing occurs continuously, may form at random platform, the operative tip that is taper portion forms platform), this taper thing contact layer is discontinuous growth as shown in Figure 2, its coverage rate is 5% to 100%, account for the area ratio of the smooth contact layer 61a of described the second p-type layer, this taper contact layer provides lower contact resistance, apply this taper thing contact layer in nitride light-emitting assembly, except having high brightness, reduce assembly positive operation voltage and improve electrostatic withstand voltage.
According to the gallium nitride of tool low-resistance value p-type contact layer of the present invention, can comprise the p-type electrode layer being positioned on the second p-type layer, it can comprise Ni/Au, Ni/pd, Ni/Pt, Pd/ Au, Pt/Au, Ti/Au, Cr/Au, TiN, TiWNx, the metal conducting layer of WSix or ITO, ZnO, NiO, the oxidic, transparent, conductive layers of CTO.
Should be understood that, above-mentioned specific embodiments is the preferred embodiments of the present invention, and scope of the present invention is not limited to this embodiment, and all any changes of doing according to the present invention, within all belonging to protection scope of the present invention.
Claims (10)
1. an iii-nitride light emitting devices assembly, comprise N-shaped layer, active layer, p-type layer, wherein p-type layer comprises the first p-type layer and the second p-type layer, it is characterized in that: described the second p-type layer comprises smooth contact layer and taper contact layer from bottom to up, its taper contact layer is highly doped taper portion, is discontinuous growth.
2. iii-nitride light emitting devices assembly according to claim 1, is characterized in that: described the second p-type layer doping content is compared with the first p-type floor height.
3. iii-nitride light emitting devices assembly according to claim 1, is characterized in that: described the first p-type layer doping content is 1 × 10
18/ cm
3~ 5 × 10
19/ cm
3.
4. iii-nitride light emitting devices assembly according to claim 1, is characterized in that: described the second p-type layer doping content is greater than 5 × 10
19/ cm
3, be no more than 5 × 10
21/ cm
3.
5. iii-nitride light emitting devices assembly according to claim 1, is characterized in that: the concentration of described taper contact layer is greater than 5 × 10
19/ cm
3.
6. iii-nitride light emitting devices assembly according to claim 1, is characterized in that: the tapered diameter (a) of described taper contact layer, its scope is 0.1 μ m≤a≤2 μ m.
7. iii-nitride light emitting devices assembly according to claim 1, is characterized in that: the tapered height (b) of described taper contact layer, its scope is 0.1nm≤b≤10nm.
8. iii-nitride light emitting devices assembly according to claim 1, is characterized in that: the thickness of described taper contact layer is less than or equal to 200.
9. iii-nitride light emitting devices assembly according to claim 1, is characterized in that: the area ratio that described taper contact layer accounts for described smooth contact layer is 5% to 100%.
10. iii-nitride light emitting devices assembly according to claim 1, is characterized in that: the operative tip of described taper contact layer is platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410183738.6A CN103985803A (en) | 2014-05-04 | 2014-05-04 | Nitride LED component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410183738.6A CN103985803A (en) | 2014-05-04 | 2014-05-04 | Nitride LED component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103985803A true CN103985803A (en) | 2014-08-13 |
Family
ID=51277700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410183738.6A Pending CN103985803A (en) | 2014-05-04 | 2014-05-04 | Nitride LED component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103985803A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390575A (en) * | 2014-08-20 | 2016-03-09 | Lg伊诺特有限公司 | light emitting device and lighting system |
| CN105591000A (en) * | 2014-10-24 | 2016-05-18 | 比亚迪股份有限公司 | LED structure and formation method thereof |
| CN110459658A (en) * | 2018-05-08 | 2019-11-15 | 山东浪潮华光光电子股份有限公司 | A kind of UV LED chip of p-type GaN layer and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012114389A (en) * | 2010-11-29 | 2012-06-14 | Toshiba Corp | Semiconductor light-emitting element |
| CN103682010A (en) * | 2012-09-17 | 2014-03-26 | 比亚迪股份有限公司 | LED chip and preparation method |
-
2014
- 2014-05-04 CN CN201410183738.6A patent/CN103985803A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012114389A (en) * | 2010-11-29 | 2012-06-14 | Toshiba Corp | Semiconductor light-emitting element |
| CN103682010A (en) * | 2012-09-17 | 2014-03-26 | 比亚迪股份有限公司 | LED chip and preparation method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390575A (en) * | 2014-08-20 | 2016-03-09 | Lg伊诺特有限公司 | light emitting device and lighting system |
| CN105390575B (en) * | 2014-08-20 | 2019-11-26 | Lg伊诺特有限公司 | Luminescent device and lighting system |
| CN105591000A (en) * | 2014-10-24 | 2016-05-18 | 比亚迪股份有限公司 | LED structure and formation method thereof |
| CN110459658A (en) * | 2018-05-08 | 2019-11-15 | 山东浪潮华光光电子股份有限公司 | A kind of UV LED chip of p-type GaN layer and preparation method thereof |
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| PB01 | Publication | ||
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Application publication date: 20140813 |