M423583 五、新型說明： 【新型所屬之技術領域】 本創作涉及半導體製程廢氣的淨化設備，特別有關一 種淨化半導體製程廢氣之合氧供熱裝置。 【先前技術】 周知在半導體的產製過程中，會產生許多具有毒性、 腐蝕性及易燃性的製程廢氣，為了避免該廢氣污染環境而 造成公害，必須先將該廢氣内之有害物質予以過濾去除之 後，才能將無害的廢氣排放至外界大氣。 傳統的半導體製程廢氣的處理方式，包含一種火燄淨 化廢氣的方式及另一種熱空氣淨化廢氣的方式。其中，以 火燄淨廢氣化的方式，必須供給燃氣進入廢氣處理槽加以 點燃形成高溫火燄，藉由該高溫火燄而將廢氣中的有害物 質加以燒失而取得淨化廢氣的效果；以熱空氣淨化廢氣的 方式，是自外界供給高溫熱空氣進入廢氣處理槽内，使與 有害廢氣混合，並將有害物質加以燒失而取得淨化廢氣的 效果。 針對上述供給熱空氣以淨化廢氣的方式而言，現階段 所公開的相關技術，是將一熱空氣供應管組設於該廢氣處 理槽壁上，並以不是和廢氣入口方向相同的供熱方式，將 熱空氣導入廢氣處理槽内，使與有害廢氣混合而將有害物 質加以燒失。但是，由於進入廢氣處理槽内的半導體製程 廢氣是經由廢氣幫浦（dry pump)驅動而具有一特定的給氣 壓力，導致該處理槽中的廢氣能和該不同方向供入的熱空 氣發生混合後而淨化有害物質的作用時間極為有限，乃至 3 於淨化效率相對受到影響。 人k再者，由於淨化半導體製程廢氣所用的設備，是由一 己軋頭座（〇巧8如时6(111以(1)結合在該廢氣處理槽上而形 上述的廢氣導管以及m導管與1氣導管通^ 疋设在該合氧頭座上，以便導引該廢氣、乾空氣及氮氣進 處理匕内，接受焉溫的火談或熱空氣的淨化處理。然而， ^淨化處理過程中，難免會在所述廢氣、乾空氣及氮氣等 v 的排放口處堆積粉末(powder),由於該等排放口是位在 處理槽内，清理不易，在粉末日積月累之下，易對該等氣 體的排放口形成氣阻，而影想處理槽的使用壽命。 此外，傳統設於合氧頭座上的廢氣導管，受限於合氧 頭座上的組a又面積’使該廢氣導管的官孔内徑有由進氣方 向往排氣方向逐漸縮小的情形，使得廢氣處理槽内的廢氣 排放口的口徑較小，如此一來，勢必在廢氣供應管路中形 成背壓，進而增加廢氣給氣端的廢氣幫浦的負载，再加上 該廢氣導管的排放口處容易推積粉末，乃至於造成廢氣幫 浦的負載過大而有發生跳機（當機)致停止運作的問題。 【新型内容】 本創作之目的旨在改善下列問題： 1. 熱空氣進入廢氣處理槽内與廢氣接觸的時間受限而 影想淨化廢氣中有害物質的效率。 2. 設置於合氧頭座上的廢氣導管、乾空氣導管及氮氣 導管不易拆卸，導致難以清除所述導管之排放口堆積的粉 末，而影想廢氣處理設備的使用壽命。 3. 廢氣導管的廢氣排放口的口徑較小或不一致，導致 M423583 供應廢氣進入處理槽過程中易生背壓，而影響廢氣幫浦的 正常運作。 為實現上述之目的並解決問題，本創作提供一種淨化 半導體製程廢氣之合氧供熱裝置，其技術手段包括： 一處理槽； 一頭座，罩設於該處理槽頂部，該頭座上設有一個以 上的廢氣導管及一個以上的熱管；其中： 該廢氣導管延伸至該處理槽内形成一朝下的廢氣排放 口，該熱管植入該處理槽内形成一沿該廢氣排放口方向延 伸形成的管部，且該管部一端形成至少一熱空氣排放口， 該熱空氣排放口係低於該廢氣排放口 一特定距離。 根據上述技術手段，能夠增加廢氣處理槽内的廢氣與 該熱管產生的熱源的接觸時間，進而提升熱空氣淨化廢氣 中有害物質的效率。 本創作之技術手段及其相應的功效還包含： 所述頭座包含一母座及一結合於母座上的子座；其 中，該廢氣導管包含一設於該子座上的外導管，及一設於 該母座上且延伸至該處理槽内形成該廢氣排放口的内導 管。如此，將有利於必要時將母座上的子座♦卩下，使子座 上的外導管同時被卸除，並使内導管顯露，而利於清除該 廢氣排放口上堆積的粉末，以維持廢氣處理設備的使用壽 命。 所述頭座包含一母座及一結合於母座上的子座；其 中，該熱管是設於該子座上，並穿過該母座而植入該處理 槽内形成該管部。如此，將有利於必要時將母座上的子座 5 M423583 卸下，使子座上的熱管能同時自處理槽内被取出，並顯露 出熱管的熱空氣排放口，進而利於清除該熱空氣排放口上 堆積的粉末，以維持熱空氣的供氣順暢性。 其中還包含一設於該子座上的空氣導管，其具有一空 氣排放口與處理槽相連通。該母座底部具有一圍欄，該圍 攔底部具有若干通氣孔，而於圍攔内形成一空氣室，該空 氣室與空氣排放口相連通，且空氣室經由通氣孔而與處理 槽相連通。 所述廢氣導管與熱管的設置數量均為偶數，且是採間 隔方式而對應設置於該頭座上。如此，有利於頭座上同時 配置多個廢氣導管與熱管。 所述廢氣導管内的管孔直徑均相同。如此，能夠避免 供應廢氣進入處理槽過程中產生背壓，並維持廢氣幫浦正 常運作的機能。 所述熱管為内載有電熱絲的電熱管。如此，能夠藉該 熱管而將常溫空氣直接加溫生成熱空氣，並供入廢氣處理 槽内作為淨化廢氣中有害物質之用，而免於廢氣處理設備 外附設熱空氣產生設備。 為充分瞭解本創作上述技術手段及其效能，而據以實 施本創作，請參閱實施方式内容並配合圖式說明如下： 【實施方式】 請合併參閱圖1至圖5所示；其中，圖1揭示本創作 之立體圖，圖2揭示圖1所示配置的立體分解圖，圖3揭 示圖1所示配置的俯視圖，圖4揭示圖3中A-A斷面的剖 示圖，圖5揭示圖3中B-B斷面的剖示圖。由上述圖式說 6 M423583 明本創作提供一種淨化半導體製程廢氣之合氧供熱裝置， 包括一處理槽10及一頭座20 ;其中： 該處理槽10呈筒狀型體，其槽壁U上可依需求而設置 水牆，以防止粉末沾覆囤積，槽壁u頂端具有一子法蘭 (flange)12，用以組設該合氧頭座2〇。在本創作的且體實施 上，並未於處理槽1G的㈣U上裝設任何加熱廢氣所需的 元件，但實際上，該處理槽10的槽壁u内層亦可配置有電 熱器，對處理槽10内的廢氣進行加熱，但不影想本創作配 置後述熱管元件的實施。 該頭座20實質為一合氧頭座（〇xygenated head)，座體 外緣具有一母法蘭21，用以對應上述處理槽的子法蘭u而 將頭座20罩設於該處理槽1〇頂部，該子、母法蘭之間可 供對鎖若干螺栓，使頭座2G與處理槽1()之間能穩固的結 合。並利用該頭座20組設一個以上的廢氣導管3〇及一個 以上的熱管40 ;其中： ☆該廢氣導管30 一端是銜接於半導體製程廢氣的供應 端，另一端是固定於該頭座20上。該廢氣導管3〇依組裝 配置環境上的需求而可製成f曲狀管體，且依導氣通暢性 上，要求而使該廢氣導管30内部具有相同的管徑。該廢氣 導管30固定於頭座20上之端部是穿過該頭座20而延伸至 該，理槽1G内，$而形成一朝下的廢氣排放口 3卜此外， 廢氣導管3G外露的管壁上可以配置有分歧狀的氮氣導管 乂便‘入氮氣與廢氣一起混合後而供入處理槽1〇内。 «亥熱笞40貫質為一供應熱空氣的直管狀元件，熱管 的外壁上具有—鎖接部4卜且於該職20上欲組裝熱管 7 M423583 4〇|位置上也形成有一鎖接孔22，藉此將鎖接部41嫘組 於接孔22上，以便於該頭座20上設置熱管4〇。該熱管 40並相當長度的管部42能夠植入該處理槽1〇内， 特別的是，管部42是沿該廢氣排放口 31方向而延伸形 ，，且該管部42 一端形成至少一熱空氣排放口 43,該熱空 氣排放口 43實質上可以是複數個孔，且是分布於管部42 近底端的管壁四周，再者該空氣排放口 43係低於該廢氣排 放口 31 —特定距離h。 由上述說明不難瞭再解：該熱管4〇植入廢氣處理槽10 的深度相對較深於該廢氣排放口 31，特別是使該管部42與 熱空氣排放口 43皆低於廢氣排放口 31，其中該熱空氣排放 口 43與該廢氣排放口 31之間甚至保有該特定距離h的位 差，且由於該熱管42是沿該廢氣排放口 31方向而延伸形 成，因此當半導體製程廢氣經由廢氣排放口 31載入處理槽 10内時’在特定距離h範圍内流動的廢氣，能夠先和熱管 40的管部42接觸，換言之，由熱管40之管部42產生的熱 幅射能，便能夠先與特定距離h範圍内流動的廢氣進行熱 交換，產生第一道加熱廢氣的作用，隨後沿著特定距離h 順流而下的廢氣並隨即和廢氣排放口 31湧出的熱空氣進行 熱交換，產生第二道加熱廢氣的作用。如此反覆實施，便 能夠增加廢氣處理槽内的廢氣與該熱管40產生的熱源 的接觸時間，進而提升熱空氣淨化廢氣中有害物質的效率。 在進一步的具體實施上，本創作還包含下列實施細節： 所述頭座20可以是由一母座24與一子座23相互結合 而成（如圖2所示），該子、母座23、24之間可以配置利於 8 m^3583 拆卸及組裝使用的螺栓或其他等效模組方式，使子座23能 約結合於母座24上。 基於上述子、母座23、24的實施方式，而得以將所述 廢氣導管30實施成包含一外導管32與一内導管33，ϋ使 4外導管32固設於該子座23上’且該内導管33固設於該 母座24上。其中，上述氮氣導管60是設於外導管32上；M423583 V. New description: [New technical field] This creation involves the purification process of semiconductor process exhaust gas, especially related to a combined oxygen heating device for purifying semiconductor process exhaust gas. [Prior Art] It is known that in the production process of semiconductors, many process gases with toxicity, corrosiveness and flammability are produced. In order to avoid pollution caused by the exhaust gas pollution, the harmful substances in the exhaust gas must be filtered first. After removal, the harmless exhaust gas can be discharged to the outside atmosphere. The conventional semiconductor process exhaust gas treatment method includes a method of purifying the exhaust gas by flame and another method of purifying the exhaust gas by hot air. Among them, in the manner of net exhaust gas combustion, it is necessary to supply the gas into the exhaust gas treatment tank to ignite to form a high-temperature flame, and the harmful substances in the exhaust gas are burned and lost by the high-temperature flame to obtain the effect of purifying the exhaust gas; The way of exhaust gas is to supply high-temperature hot air from the outside into the exhaust gas treatment tank, mix it with harmful exhaust gas, and burn off harmful substances to obtain purified exhaust gas. In view of the above method of supplying hot air to purify the exhaust gas, the related art disclosed at this stage is to set a hot air supply pipe on the wall of the exhaust gas treatment tank, and to provide the same heating mode as the exhaust gas inlet direction. The hot air is introduced into the exhaust gas treatment tank to mix with the harmful exhaust gas to burn off the harmful substances. However, since the semiconductor process exhaust gas entering the exhaust gas treatment tank is driven by a dry pump to have a specific supply pressure, the exhaust gas in the treatment tank can be mixed with the hot air supplied in the different direction. The time for purifying harmful substances is extremely limited, and even the purification efficiency is relatively affected. In addition, the equipment used for purifying the exhaust gas of the semiconductor process is formed by a single roller head (the same as the exhaust pipe and the m-duct formed by the combination of the same on the exhaust gas treatment tank). A gas conduit is provided on the oxygen head holder to guide the exhaust gas, dry air and nitrogen into the treatment chamber, and to receive a warm fire or a hot air purification treatment. However, during the purification process It is inevitable that powders will be deposited at the discharge ports of the exhaust gas, dry air and nitrogen, etc. Since the discharge ports are located in the treatment tanks, the cleaning is not easy, and the gas is easily accumulated after the powder is accumulated over a long period of time. The discharge port forms a gas barrier, and the effect is to treat the service life of the tank. In addition, the exhaust duct conventionally placed on the oxygen-filled head base is limited by the group a on the oxygen-filled head base and the area of the exhaust duct The inner diameter of the hole is gradually reduced from the direction of the intake air to the direction of the exhaust gas, so that the diameter of the exhaust gas discharge port in the exhaust gas treatment tank is small, so that a back pressure is formed in the exhaust gas supply line, thereby increasing the exhaust gas. The end of the exhaust gas pump In addition, it is easy to accumulate powder at the discharge port of the exhaust duct, and even the load of the exhaust gas pump is too large, and there is a problem that the tripping (downtime) causes the operation to stop. [New content] The purpose of this creation is to Improve the following problems: 1. The time when hot air enters the exhaust gas treatment tank and is in contact with the exhaust gas is limited, and the efficiency of purifying harmful substances in the exhaust gas is considered. 2. Exhaust gas duct, dry air duct and nitrogen duct installed on the oxygen head seat It is not easy to disassemble, which makes it difficult to remove the powder accumulated in the discharge port of the duct, and the life of the exhaust gas treatment equipment is considered. 3. The diameter of the exhaust gas discharge port of the exhaust duct is small or inconsistent, which causes the M423583 supply exhaust gas to enter the treatment tank. It is easy to generate back pressure and affect the normal operation of the exhaust pump. In order to achieve the above objectives and solve the problem, the present invention provides an oxygen heating device for purifying semiconductor process exhaust gas, the technical means thereof include: a treatment tank; The cover is disposed at the top of the treatment tank, and the headstock is provided with more than one exhaust gas conduit and one or more heat pipes; wherein: The gas pipe extends into the treatment tank to form a downward exhaust gas discharge port, and the heat pipe is implanted into the treatment tank to form a pipe portion extending along the exhaust gas discharge port, and at least one hot air discharge is formed at one end of the gas pipe portion. The hot air discharge port is lower than the exhaust gas discharge port by a specific distance. According to the above technical means, the contact time between the exhaust gas in the exhaust gas treatment tank and the heat source generated by the heat pipe can be increased, thereby improving the harmful substances in the hot air purification exhaust gas. The technical means of the present invention and the corresponding functions thereof further comprise: the head base comprises a female seat and a sub-seat coupled to the female seat; wherein the exhaust duct comprises an outer portion disposed on the sub-seat a conduit, and an inner conduit disposed on the base and extending into the treatment tank to form the exhaust vent. Thus, it is advantageous to squat the sub-seat on the female seat when necessary, so as to be external to the sub-seat The conduit is simultaneously removed and the inner conduit is exposed to facilitate removal of the powder deposited on the exhaust vent to maintain the useful life of the exhaust treatment device. The head base includes a female seat and a sub-seat coupled to the female seat; wherein the heat pipe is disposed on the sub-seat and is inserted into the processing space through the female seat to form the tube portion. In this way, it is advantageous to remove the sub-seat 5 M423583 on the female seat when necessary, so that the heat pipe on the sub-seat can be taken out from the processing tank at the same time, and the hot air discharge port of the heat pipe is exposed, thereby facilitating the removal of the hot air. The powder accumulated on the discharge port to maintain the smooth supply of hot air. There is further included an air duct disposed on the sub-seat having an air discharge port in communication with the treatment tank. The bottom of the base has a fence having a plurality of vent holes at the bottom thereof, and an air chamber is formed in the dam, the air chamber is in communication with the air discharge port, and the air chamber communicates with the treatment tank via the vent hole. The exhaust duct and the heat pipe are disposed in an even number, and are disposed on the head base correspondingly. In this way, it is advantageous to simultaneously configure a plurality of exhaust ducts and heat pipes on the headstock. The diameters of the tube holes in the exhaust gas conduit are all the same. In this way, it is possible to avoid the generation of back pressure during the supply of exhaust gas into the treatment tank and to maintain the function of the normal operation of the exhaust gas pump. The heat pipe is an electric heating pipe carrying a heating wire. In this way, the normal temperature air can be directly heated by the heat pipe to generate hot air, and supplied to the exhaust gas treatment tank as a source for purifying harmful substances in the exhaust gas, and the hot air generating device is not provided outside the exhaust gas treating device. In order to fully understand the above technical means and the performance of the present invention, and to implement the present invention, please refer to the embodiment content and the following description: [Embodiment] Please refer to FIG. 1 to FIG. 5 together; FIG. 2 is a perspective view showing the configuration shown in FIG. 1 , FIG. 3 is a top view showing the configuration shown in FIG. 1 , FIG. 4 is a cross-sectional view showing the AA cross section in FIG. 3 , and FIG. A cross-sectional view of the BB section. According to the above description, M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M The water wall can be set according to the demand to prevent the powder from being hoarded, and the top of the groove wall u has a sub-flange 12 for assembling the oxygen-filled head base 2 . In the present invention, the components required for heating the exhaust gas are not disposed on the (four) U of the processing tank 1G. However, in practice, the inner wall of the tank wall u of the processing tank 10 may be provided with an electric heater for processing. The exhaust gas in the tank 10 is heated, but it is not considered that the heat pipe element described later is disposed. The head base 20 is substantially an oxygenated head, and the outer edge of the seat has a female flange 21 for covering the head flange 20 in the processing tank 1 corresponding to the sub-flange u of the processing tank. At the top of the crucible, a plurality of bolts can be locked between the sub-female and the female flange, so that the head joint 2G and the treatment tank 1 () can be firmly combined. And using the headstock 20 to set more than one exhaust duct 3〇 and one or more heat pipes 40; wherein: ☆ the exhaust duct 30 has one end connected to the supply end of the semiconductor process exhaust gas, and the other end is fixed to the headstock 20. . The exhaust duct 3 can be made into an elbow-shaped pipe body according to the requirements of the assembly and arrangement environment, and the inside of the exhaust gas pipe 30 has the same pipe diameter according to the requirements of the air-conducting patency. The end portion of the exhaust duct 30 fixed to the headstock 20 extends through the headstock 20 to the inside of the tank 1G to form a downward exhaust gas discharge port. Further, the exhaust pipe 3G is exposed. The wall may be provided with a divergent nitrogen conduit squatting 'mixed with nitrogen and exhaust gas and supplied to the treatment tank 1 。. «Hai 笞 40 is a straight tubular element that supplies hot air. The outer wall of the heat pipe has a locking part 4 and the heat pipe 7 is assembled on the position 20 M423583 4〇|There is also a locking hole at the position. 22, whereby the locking portion 41 is assembled on the connecting hole 22, so that the heat pipe 4 is disposed on the headstock 20. The heat pipe 40 and the tube portion 42 of a considerable length can be implanted into the treatment tank 1 , in particular, the tube portion 42 extends in the direction of the exhaust gas discharge opening 31, and at least one heat is formed at one end of the tube portion 42. The air discharge port 43, the hot air discharge port 43 may be substantially a plurality of holes, and is distributed around the pipe wall near the bottom end of the pipe portion 42, and the air discharge port 43 is lower than the exhaust gas discharge port 31 - specific Distance h. It is not difficult to solve the above description: the heat pipe 4 is implanted into the exhaust gas treatment tank 10 to a depth deeper than the exhaust gas discharge port 31, in particular, the pipe portion 42 and the hot air discharge port 43 are both lower than the exhaust gas discharge port. 31, wherein the hot air discharge port 43 and the exhaust gas discharge port 31 even maintain a difference in the specific distance h, and since the heat pipe 42 is formed to extend in the direction of the exhaust gas discharge port 31, when the semiconductor process exhaust gas passes through When the exhaust gas discharge port 31 is loaded into the treatment tank 10, the exhaust gas flowing within a certain distance h can be first brought into contact with the tube portion 42 of the heat pipe 40, in other words, the heat radiation energy generated by the tube portion 42 of the heat pipe 40. It is possible to first exchange heat with the exhaust gas flowing within a certain distance h to generate the first heated exhaust gas, and then the exhaust gas flowing down the specific distance h and then exchange heat with the hot air emerging from the exhaust gas discharge port 31. Produces a second heating exhaust gas. By repeating this, it is possible to increase the contact time between the exhaust gas in the exhaust gas treatment tank and the heat source generated by the heat pipe 40, thereby improving the efficiency of the harmful substances in the hot air purification exhaust gas. In further implementation, the present invention also includes the following implementation details: The headstock 20 may be formed by combining a female seat 24 and a sub-mount 23 (as shown in FIG. 2), the sub-mount 23 Between 24 and 24, bolts or other equivalent modular means for 8 m^3583 disassembly and assembly can be arranged, so that the sub-seat 23 can be coupled to the female seat 24. Based on the embodiment of the sub-mounts, the female seat 23, 24, the exhaust duct 30 is configured to include an outer duct 32 and an inner duct 33, and the outer duct 32 is fixed to the sub-seat 23' The inner conduit 33 is fixed to the female seat 24. Wherein, the nitrogen conduit 60 is disposed on the outer conduit 32;
5亥内導管33是坐落於處理槽1〇内，且延伸形成該廢氣排 玫口 31。如此配置，將有利於必要時將母座24上的子座 23卸下’使子座23上的外導管32同時被卸除，並使内導 g 33顯露，而利於清除該廢氣排放口 31上堆積的粉末， 以雒持廢氣處理設備的使用壽命。 …基於上述子、母座23、24的實施方式，也利於將所述 1官40設於該子座23上，並穿過該母座24而植入該處理 ^ 10内形成該管部及管部一端的熱空氣排放口 43。如此配 置三也有助於卸下子座23時能同時從處理槽丨〇中取出該 、、、笞4〇，並顯露出熱管的熱空氣排放口，進而利於清除該The 5 inner duct 33 is located in the processing tank 1 and extends to form the exhaust gas discharge port 31. Such a configuration will facilitate the unloading of the sub-mount 23 on the female seat 24 as necessary. [The outer duct 32 on the sub-seat 23 is simultaneously removed, and the inner guide g 33 is exposed, which facilitates the removal of the exhaust gas discharge port 31. The accumulated powder is used to maintain the service life of the exhaust gas treatment equipment. Based on the embodiments of the sub-mounts and the female seats 23 and 24, it is also advantageous to provide the first official 40 on the sub-mount 23 and pass through the female seat 24 to implant the processing unit 10 to form the tube portion. A hot air discharge port 43 at one end of the pipe portion. The configuration 3 also helps to remove the sub-seat 23 from the processing tank at the same time, and exposes the hot air discharge port of the heat pipe, thereby facilitating the removal of the sub-seat 23.
，空氣排放口 43上堆積的粉末，以維持熱空氣的供氣順暢 性。 、本創作也包含在該子座23上設置至少一空氣導管5()， 乂便導引清潔的乾空氣((11以11(117以1：，€〇入)進入該處理槽1〇 =，因此，在上述卸下子座23時也能同時卸下該空氣導管 〇,以清除其空氣排放口 51上易生堆積的粉末.基於如此 2己置，本創作之母座24底部也可附設一圍攔25，且圍攔 5底部布設有若干通氣孔26，使圍欄25内形成一空氣室 7並使空氟室27與該空氣排放口 51相連通，且該空氣 M423583 室27經由通氣孔26而與處理槽10相連通；據此，該空氣 導管50能先將清潔的乾空氣導入空氣室27内暫時屯積 後，再經由該布設的通氣孔26而以更加均勻且分散的方式 將空氣室27内的清潔的乾空氣導入處理槽10内，以便在 處理槽10内一同接受熱空氣的加熱而產生氫離子(H+)，提 供淨化廢氣中有害物質之所需。 此外，上述廢氣導管30、熱管40、空氣導管50及氮 氣導管60的設置數量均可為複數，但由於廢氣導管30的 管徑遠大於熱管40、空氣導管50及氮氣導管60，為了能 夠在頭座20既定且有限的面積上設置廢氣導管30、熱管 40與空氣導管50，特別限定該廢氣導管30與熱管40的設 置數量可以實施為偶數，而採相互間隔方式而對應設置於 該頭座20上，進而有利於頭座20上同時配置多個廢氣導 管30、熱管40、空氣導管50及氮氣導管60,以提升處理 槽10的廢氣淨化量能。 由於所述廢氣導管30(包含外導管32與内導管33)的管 孔直徑均相同，因此能夠避免供應廢氣進入處理槽10過程 中產生背壓，以維持設於廢氣幫浦（未揭示）正常運作的機 能。 另請參閱圖6,揭示圖1所示熱管的局部放大剖示圖， 說明所述熱管40實質上可為内載有電熱絲44的電熱管， 使電熱絲44圈繞於一内管45與外管46之間，而將外界給 壓供入内管45内的空氣瞬間加溫成熱空氣，以便將熱空氣 供入處理槽10内；或者，所述熱管40亦可實施成沒有内 載電熱絲的熱空氣供應管，而僅專責導引外界給壓供應的 10 M423583 熱空氣進入處理槽10内，作為淨化廢氣中有害物質之用。 以上所述僅為本創作的較佳實施例而已，並不用以限 制本創作，凡在本創作的精神和原則之内所做的任何修 改、替換、改進等，均應包含在本創作保護的範圍之内。 【圖式簡單說明】 圖1是本創作之立體圖； 圖2是圖1所示配置的立體分解圖； 圖3是圖1所示配置的俯視圖； 圖4是圖3中A-A斷面的剖示圖； 圖5是圖3中B-B斷面的剖示圖； 圖6是圖1所示熱管的局部放大剖示圖。 【主要元件符號說明】 處理槽10 槽壁11 子法蘭12 頭座20 母法蘭21 鎖接孔22 子座23 母座24 圍欄25 通氣孔26 空氣室27 M423583 廢氣導管30 廢氣排放口 31 外導管32 内導管33 熱管40 鎖接部41 管部42 熱空氣排放口 43 電熱絲44 内管45 外管46 特定距離h 空氣導管50 空氣排放口 51 氮氣導管60The powder deposited on the air discharge port 43 is used to maintain the smooth supply of hot air. The creation also includes providing at least one air duct 5 () on the sub-seat 23 to guide the clean dry air ((11 to 11 (117: 1:, 〇)) enters the treatment tank 1 〇 = Therefore, when the sub-mount 23 is removed as described above, the air duct crucible can be simultaneously removed to remove the powder which is likely to accumulate on the air discharge port 51. Based on the two, the bottom of the female seat 24 of the present invention can also be attached. a fence 25, and a plurality of vent holes 26 are arranged in the bottom of the fence 5, so that an air chamber 7 is formed in the fence 25 and the air chamber 27 is communicated with the air discharge port 51, and the air M423583 chamber 27 is vented through the vent hole 26, in communication with the treatment tank 10; accordingly, the air duct 50 can first introduce clean dry air into the air chamber 27 for temporary accumulation, and then through the vent hole 26 disposed in a more uniform and dispersed manner. The clean dry air in the air chamber 27 is introduced into the treatment tank 10 to receive the heating of the hot air together in the treatment tank 10 to generate hydrogen ions (H+), which is required to purify harmful substances in the exhaust gas. 30. Design of heat pipe 40, air duct 50 and nitrogen duct 60 The number of the exhaust ducts can be plural, but since the diameter of the exhaust duct 30 is much larger than the heat pipe 40, the air duct 50, and the nitrogen duct 60, the exhaust duct 30, the heat pipe 40, and the air duct can be disposed in a predetermined and limited area of the headstock 20. 50, in particular, the number of the exhaust ducts 30 and the heat pipes 40 can be set to an even number, and correspondingly disposed on the headstock 20 in a spaced manner, thereby facilitating the simultaneous arrangement of a plurality of exhaust ducts 30 and heat pipes on the headstock 20. 40. The air duct 50 and the nitrogen duct 60 are used to raise the amount of exhaust gas purification of the treatment tank 10. Since the diameters of the tubes of the exhaust duct 30 (including the outer duct 32 and the inner duct 33) are the same, it is possible to avoid the supply of exhaust gas. The back pressure is generated during the processing of the tank 10 to maintain the function of the exhaust gas pump (not disclosed). Referring to FIG. 6, a partial enlarged cross-sectional view of the heat pipe shown in FIG. 1 is disclosed, illustrating the heat pipe 40. The upper part can be an electric heating tube carrying a heating wire 44, so that the heating wire 44 is wound around an inner tube 45 and the outer tube 46, and the air supplied to the inner tube 45 by the outside is instantly heated into hot air. Hot air is supplied into the treatment tank 10; alternatively, the heat pipe 40 can also be implemented as a hot air supply pipe without an internal heating wire, and only 10 M423583 hot air for guiding the external pressure supply is introduced into the treatment tank 10 The above description is only for the purpose of purifying the harmful substances in the exhaust gas. The above description is only the preferred embodiment of the present invention, and is not intended to limit the creation, any modification, replacement, and modification made within the spirit and principle of the present creation. Improvements, etc., should be included in the scope of this creation protection. [Simplified illustration of the drawings] Fig. 1 is a perspective view of the creation; Fig. 2 is an exploded perspective view of the configuration shown in Fig. 1. Fig. 3 is a configuration shown in Fig. 1. Figure 4 is a cross-sectional view of the AA section of Figure 3; Figure 5 is a cross-sectional view of the BB section of Figure 3; and Figure 6 is a partially enlarged cross-sectional view of the heat pipe of Figure 1. [Main component symbol description] Treatment tank 10 Slot wall 11 Sub-flange 12 Headstock 20 Female flange 21 Locking hole 22 Sub-seat 23 Female seat 24 Fence 25 Vent hole 26 Air chamber 27 M423583 Exhaust duct 30 Exhaust gas outlet 31 Catheter 32 Inner conduit 33 Heat pipe 40 Locking portion 41 Tube portion 42 Hot air discharge port 43 Heating wire 44 Inner tube 45 Outer tube 46 Specific distance h Air duct 50 Air vent 51 Nitrogen duct 60