五、新型說明： 【新型所屬之技術領域】 [0001] 本創作係有關於一種發光裝置，特別是一種具濾光 結構之發光裝置。 【先前技術】 [_2] 白熾燈泡由英國人斯旺（Joseph Swan)在1878年以 真空下碳絲通電發光的燈泡獲得專利，並在隔年愛迪生 (Thomas Edison)將其發揚光大。白熾燈生產成本相當 低廉，但因為發光效率低落，目前全球能源短缺，在重 視環保節能的現今社會，白熾燈泡已被許多國家視為需 要淘汰的光源。 1962年，通用電氣公司的尼克.何倫亞克（Nick Holonyak Jr.)開發出可見光發光二極體，造福人群。 相隔多年，當時在日本日亞化學工業（Nichia Corpor_ ati on)工作的中村修二（shu j丨Nakamura)發明了基 於氮化嫁（GaN )迪氡化聲工MM)_的藍光發光二極 體’之後日亞化學利用藍光發光二極體做為發光單元， 再用《4光劑把部分或全部光轉化激發產生人眼可見的白 光發光一極體’因為發光技術不斷的更新，市場上開啟 了發光二極體相關技術的研發。 冑興替代光源中 ，發光二極體目前在市場上被熱烈 。才其具有體積小、耗電低、壽命長、反應速度快加 上、沒有添^于染的環保問題，可因應產業需求整合成陣列 式70件’因此已普遍使用於各種消費性電子產品、通訊 、運輸栽具的指示器或顯示裝置上，成為生活中不可或 表單編號A0101 第3頁/共18頁 缺的重要元件。但若發光二極體要廣泛成為照明設備之 前，其發光效率需更加提升，使同樣照明亮度下，以最 少的發光二極體數目發揮最大照明效果’才能與現今的 照明設僙相抗衡。 第一圖為習知典塑之發光二極體結構剖面圓，係包 含一透光基板30、一 N塑半導體層32、一 P型半導體層36 、一金屬反射層38及設於一 N型半導體層32及一 P型半導 體層36之間的一半導體發光層34。該P型半導體層36具有 較多帶正電之電洞，該N塑半導體32具有較多帶負電之 電子，在發光二極體P型半導體層36及N型半導體層32兩 端施予一順向偏壓，當電流通過時會使得電子與電祠結 合’結合的能量便以光的形式激發釋放’依使用衬料的 能階高低決定發光的波長，因此可發出不同顏色的光。 目前發光二極體為了增加發光效率’如第一圖所示 ，會於透光基板30下方設置一金屬反射層38，發光二極 體之一半導體發光層34通過該透光基板30往下發射之光 ，會由金屬反射層38反射該發光二極體所發出的光能量 ，然而此金屬反射層38之反射效率不佳’導致部分入射 光會被吸收掉，並降低此發光二極體的發光效率。為了 解決上述問題’目前研發出由一金屬材料及一介電材料 構成該反射層，如此該反射層只能改善與其他金屬層產 生相互擴散的現象’但仍無法提高其反射率，對於該發 光二極體之發光效率提升仍有限，除此之外，習知應用 於發光二極體之反射層對於光之萃取度亦不佳，以致於 無法提升光之純度’進而提升發光二極體的發光效率。 有鑑於上述之問題，本案創作人苦思研發，創作一 表單編號A0101 第4頁/共18頁 種濾光結構，該濾光結構讓一波長範圍之光線不通過， 該濾光結構可應用於各類型的發光二極體，其不僅可改 善上述習用之缺點，亦可改善光源之萃取度，以提升該 發光二極體的發光效率。 【新型内容】 [0003] 本創作之主要目的，在於提供一種具濾光結構之發 光裝置及其濾光結構，該濾光結構可阻擋一波長範圍之 光通過，可有效增加光純度，及提高螢光粉之激發效率 〇 本創作之另一目的之一，在於提供一種具濾光結構 之發光裝置及其濾光結構，其利用一濾光結構包含複數 第一濾光單元與複數第二濾光單元，並讓第一與第二波 長範圍之間的光線不通過該濾光結構，其可改善光之萃 取度並提高發光效率。 為達以上之目的，本創作提供一種具濾光結構之發 光裝置，該發光裝置主要構造包括一發光二極體及一濾 光結構，該濾光結構設於該發光二極體之下，並包含一 第一濾光單元與一第二濾光單元，該第一濾光單元具有 複數第一高濾光層與複數第一低濾光層，該第二濾光單 元具有複數第二高濾光層與複數第二低濾光層，該些第 一高濾光層與該些第一低濾光層交叉疊合用於過濾第一 波長之光線，該些第二高濾光層與該些第二低濾光層交 叉疊合用於過濾第二波長之光線，當發光裝置產生包括 小於一第一波長之光線、大於該第一波長並小於一第二 波長之光線與大於該第二波長之光線，該些第一濾光單 元可讓小於第一波長之光線通過，而該些第二濾光單元 表單编號A0101 第5頁/共18頁 M421600 可讓大於第二波長之光線通過，第一與第二波長範圍之 間的光線不通過該濾光結構，進而改善該發光裝置之光 的萃取度，以提升光的純度及發光效率。 本創作另外提供一種具阻擋不同波長範圍之濾光結 構之發光裝置，該濾光結構可分別阻擋不同波長範圍之 光線通過，該濾光結構使用於發光裝置，將可改善光的 萃取度，藉以提升光的纟屯度及發光效率。 【實施方式】 [0004] 茲為使貴審查委員對本創作之技術特徵及所達成 之功效更有進一步之瞭解與認識，謹佐以較佳之實施例 圖及配合詳細之說明，說明如後。 在此必須說明，本創作圖式係為各實施例之發光二 極體元件結構截面示意圖，各層厚度並未依據實際比例 繪製，且為求清晰表達本創作結構之特徵，類似的元件 以相同的編號來表示。 首先，請參閱第二圖，係為本創作之一較佳實施例 之結構示意圖。如圖所示，本實施例提供一種發光裝置1 ，該發光裝置1包含一發光二極體10及一濾光結構12，該 發光二極體10包含一透光基板11及一磊晶結構13。該濾 光結構12包含一第一濾光單元121及一第二濾光單元122 ，該第一濾光單元121具有複數第一高濾光層1211與複數 第一低濾光層1212，該第二濾光單元122具有複數第二高 濾光層1221與複數第二低濾光層1222。 該磊晶結構形成於該透光基板11之第一表面，其結 構係包含一具導電性之第一半導體層131，設於透光基板 11之上、一半導體發光層132，設於該第一半導體層131 表單編號A0101 第6頁/共18頁 之上，及一具導電性之第二半導體層133，設於該半導體 發光層132之上，而該遽光結構12設於相對該第一表面的 該透光基板11的第H該透光基板u可選自藍寶石 材料、I化鎵㈣料或碳切類材料作為底材也就是 為-藍寳石基板或-氮化鎵基板或—碳切基板，而該 第-丰導體層131可以是N型摻雜氮化鎵她層，該第二 半導體層133可以是P型摻雜氮化鎵銦鋁層及該半導體發 光層132可以是氮化鎵銦鋁層。 自第一表面起，該些濾光單元121、122疊合，本實 施例係以第一濾光單元121堆疊於第二濾光單元122之上 ’但本創作亦可第一渡光卓元12 2堆疊於第一遽光單元 121之上。該些第一高濾光層1211與該些第一低濾光層 1212具不同折射係數，該些第二高濾光層ail與該些第 一低滤光層1212具有不同折射係數，其中該些第一高濾 光層1211之折射係數大於該些第一低濾光層1212，該些 第二高慮光層1221之折射係數大於該些第二低遽光層 1222之折射係數，且該些篡龙單尤m ' 122分別遮蔽不 同波長範圍之光線，本實施例之第一濾光單元121係渡除 第一波長之光線’第二渡光單元12 2係渡除第二波長之光 線。 承接上述，該些濾光層之材料可選自氧化矽、氡化 欽、氧化铌.、氧化鋁、氧化组、氧化銦、氧化鎂 '氧化 錫之任一者，且該些濾光層會因折射係數不同而使用該 些濾光層之材料種類’且該些高濾光層與低濾光層更可 分別具不同厚度比例之，該些濾光單元121 ' 122之厚度 範圍介於1〇〇〇埃至25000埃之間。當發光二極體1〇通電 表單編號A0101 第7 1/共18 1 時，該發光二極體10產生包括小於一第一波長之光線、 大於該第一波長並小於一第二波長之光線與大於該第二 波長之光線，該第一波長之光線介於300與700 nm之間 ，且該第二波長之光線介於300與700 nm之間，該第一 濾光單元121讓小於第一波長之光線通過，而該第二濾光 單元122讓大於第二波長之光線通過，該濾光結構12阻擋 第一波長與第二波長範圍之間的光線，而讓該第一波長 與第二波長範圍之間的光線全反射，其可改善發光裝置1 對於光之萃取度，並提升發光裝置1之發光效率。 第三圖係本創作具濾光結構之發光裝置之第二實施 例的結構截面示意圖。本實施例提供一種發光裝置2，該 發光裝置2包含一發光二極體20、一濾光結構22。該濾光 結構22包含一第一濾光單元221、一第二濾光單元222、 一第三濾光單元223及一第四濾光單元224，該第一濾光 單元221具複數第一高濾光層2211與複數第一低濾光層 2212，該第二濾光單元222具複數第二高濾光層2221與 複數第二低濾光層2222，該第三濾光單元223具複數第三 高濾光層2231與複數第三低濾光層2232，該第四濾光單 元224具複數第四高濾光層2241與複數第四低濾光層 2242。 該些濾光單元221、222 ' 223、224分別交互疊合 高、低濾光層，該些第一高濾光層2211與該些第一低濾 光層2212具不同折射係數，該些第二高濾光層2221與該 些第二低濾光層2222具有不同折射係數，該些第三高濾 光層2231與該些第三低濾光層2232具有不同折射係數， 及該些第四高濾光層2241與該些第四低濾光層2242具有 表單編號A0101 第8頁/共18頁 不同折射係數。該些濾光層之材料係選自氧化矽'氧化 鈦、氧化鈮、氧化鋁、氧化鈕'氧化銦、氧化鎂氧化 錫之任一者，且該些濾光層會因折射係數不同而使用該 些濾光層之材料種類，或該些高濾光層與該些低濾光層 更可具不同厚度比例’該些濾光單元221、222、、 224之厚度範圍介於1〇〇〇埃至25000埃之間。當發光二極 體20通電時，該發光二極體產生包括一小於一第一波長 之光線、大於該第一波長並小於一第二波長之光線 '大 於該第二波長並小於一第三波長之光線'大於該第三波 長並小於一第四波長與大於第四波長之光線，該第一至 第四波長之光線介於300與700 nm之間。該第一滅光單 元221讓小於第一波長之光線通過，而該第二濾光單元 222讓大於第二波長之光線通過，且該第三濾光單元223 讓小於第三波長之光線通過，而該第四濾光單元2 24讓大 於第四波長之光線通過，該濾光結構22阻擋第一波長與 第二波長範圍之間的光線，亦阻擋第三波長與第四波長 範圍之間的光線，而讓該第一波長與第三波長範圍之間 的光線及第三波長與第四波長範圍之間的光線全反射， 因此該濾光結構22使用於發光裝置2，將可依需求阻擋不 同波長範圍的光線，藉以改善光的萃取度，並提升光的 純度及發光效率。 由上所述，本創作提供一種具濾光結構之發光裝置 及其濾光結構，該濾光結構包含一第一濾光單元與一第 二濾光單元，當該濾光結構用於發光裝置，該濾光結構 之該第一濾光單元讓小於第一波長之光線通過’而該第 二濾光單元讓大於第二波長之光線通過，該濾光結構阻 表單編號A0101 第9頁/共18頁 M421600 擋第一波長與第二波長範圍之間的光線通過，可改善光 的萃取度並有效增加光純度，及提高螢光粉之激發效率 故本創作實為一具有新穎性、進步性及可供產業上 利用者，應符合我國專利法專利申請要件無疑，爰依法 提出新型專利申請，祈鈞局早曰賜准專利，至感為禱。 惟以上所述者，僅為本創作一較佳實施例而已，並 非用來限定本創作實施之範圍，故舉凡依本創作申請專 利範圍所述之形狀、構造、特徵及精神所為之均等變化 與修飾，均應包括於本創作之申請專利範圍内。 【圖式簡單說明】 [0005] 第一圖係一種習知之發光裝置之示意圖； 第二圖係本創作之一較佳實施例之具濾光結構之發光裝 置之示意圖；及 第三圖係本創作之另一較佳實施例之具濾光結構之發光 裝置之示意圖。 【主要元件符號說明】 106] 1 發光裝置 10 發光二極體 11 透光基板 12 滤光結構 121 第一濾光單元 1211 第一高遽光層 1212 第一低遽光層 表單編號A0101 第10 M421600V. New description: [New technology field] [0001] The present invention relates to a light-emitting device, in particular to a light-emitting device with a filter structure. [Prior Art] [_2] The incandescent bulb was patented by Britishman Joseph Swan in 1878 with a carbon-powered bulb under vacuum, and was carried forward by Thomas Edison the following year. Incandescent lamps are relatively inexpensive to produce, but because of the low luminous efficiency and the current global energy shortage, incandescent bulbs have been regarded by many countries as a source of light that needs to be eliminated in today's society where environmental protection and energy conservation are important. In 1962, General Electric's Nick Holonyak Jr. developed a visible light-emitting diode for the benefit of the crowd. After many years, shu j丨Nakamura, who worked at Nichia Corpor_ ati on, invented a blue light-emitting diode based on nitriding (GaN) Dixon MM). After that, Nichia Chemical used the blue light-emitting diode as the light-emitting unit, and then used "4 light agents to convert some or all of the light into excitation to produce a white light-emitting one-body" that was visible to the human eye. Development of related technologies for light-emitting diodes. Among the alternative sources of Zhaoxing, the light-emitting diodes are currently enthusiastic in the market. Only with its small size, low power consumption, long life, fast response, and no environmental problems, it can be integrated into an array of 70 pieces according to industrial needs. Therefore, it has been widely used in various consumer electronic products. The indicator of the communication and transportation device or the display device becomes an important component in the life that cannot be used or the form number A0101 is 3rd page/total 18 pages. However, if the light-emitting diode is widely used as a lighting device, its luminous efficiency needs to be improved, so that the maximum illumination effect can be achieved with the minimum number of light-emitting diodes under the same illumination brightness, in order to compete with the current lighting design. The first figure is a circular cross section of a light-emitting diode structure of a conventional plastic, comprising a transparent substrate 30, an N-plastic semiconductor layer 32, a P-type semiconductor layer 36, a metal reflective layer 38, and an N-type semiconductor. A semiconductor light-emitting layer 34 between the layer 32 and a P-type semiconductor layer 36. The P-type semiconductor layer 36 has a plurality of positively charged holes, and the N-plastic semiconductor 32 has a plurality of negatively charged electrons, and is applied to both ends of the light-emitting diode P-type semiconductor layer 36 and the N-type semiconductor layer 32. Forward biasing, when the current is passed, causes the electrons to combine with the electric enthalpy. 'The combined energy is excited and released in the form of light'. The wavelength of the illuminating light is determined according to the energy level of the lining, so that different colors of light can be emitted. In order to increase the luminous efficiency of the light-emitting diode, as shown in the first figure, a metal reflective layer 38 is disposed under the transparent substrate 30, and one of the light-emitting diodes 34 is emitted downward through the transparent substrate 30. The light reflected by the metal reflective layer 38 reflects the light energy emitted by the light-emitting diode 38. However, the reflective efficiency of the metal reflective layer 38 is poor, which causes some incident light to be absorbed and reduces the light-emitting diode. Luminous efficiency. In order to solve the above problem, it has been developed to form the reflective layer from a metal material and a dielectric material, so that the reflective layer can only improve the phenomenon of interdiffusion with other metal layers, but the reflectance cannot be improved. In addition, the improvement of the luminous efficiency of the diode is still limited. In addition, the reflection layer applied to the light-emitting diode is not good for the extraction of light, so that the purity of the light cannot be improved, and the light-emitting diode is further improved. Luminous efficiency. In view of the above problems, the creator of this case has painstakingly researched and developed a form filter No. A0101, page 4 / a total of 18 pages of filter structure, the filter structure allows light in a wavelength range to not pass, the filter structure can be applied Each type of light-emitting diode can not only improve the disadvantages of the above-mentioned conventional applications, but also improve the extraction degree of the light source to improve the luminous efficiency of the light-emitting diode. [New content] [0003] The main purpose of the present invention is to provide a light-emitting device with a filter structure and a filter structure thereof, which can block the passage of light in a wavelength range, can effectively increase the light purity, and improve One of the other purposes of the present invention is to provide a light-emitting device having a filter structure and a filter structure thereof, which use a filter structure to include a plurality of first filter units and a plurality of second filters. The light unit, and let the light between the first and second wavelength ranges not pass through the filter structure, which can improve the extraction degree of light and improve the luminous efficiency. For the purpose of the above, the present invention provides a light-emitting device having a filter structure, the light-emitting device is mainly configured to include a light-emitting diode and a filter structure, the filter structure is disposed under the light-emitting diode, and a first filter unit and a second filter unit, the first filter unit has a plurality of first high filter layers and a plurality of first low filter layers, and the second filter unit has a plurality of second high filters An optical layer and a plurality of second low filter layers, the first high filter layers and the first low filter layers are superimposed to filter light of a first wavelength, and the second high filter layers and the The second low filter layer is superimposed to filter the light of the second wavelength, and the light emitting device generates light including less than a first wavelength, light greater than the first wavelength and smaller than a second wavelength, and greater than the second wavelength Light, the first filter unit allows light of less than the first wavelength to pass, and the second filter unit form number A0101 page 5 / 18 pages M421600 allows light of greater than the second wavelength to pass, Light between one and the second wavelength range With this filter structure, thus improving the extraction of the light emitting device, the purity and to enhance the efficiency of light emission. The present invention further provides a light-emitting device having a filter structure for blocking different wavelength ranges, which can block the passage of light of different wavelength ranges, respectively. The filter structure is used in a light-emitting device, which can improve the extraction degree of light. Improve the brightness and luminous efficiency of light. [Embodiment] [0004] For a better understanding and understanding of the technical features and the achievable effects of this creation, please refer to the preferred embodiment and the detailed description. It should be noted that the present drawing is a schematic cross-sectional view of the structure of the light-emitting diode elements of the respective embodiments, and the thickness of each layer is not drawn according to the actual scale, and the similar elements are identical in order to clearly express the characteristics of the creative structure. The number is used to indicate. First, please refer to the second figure, which is a schematic structural view of a preferred embodiment of the present invention. As shown in the figure, the present embodiment provides a light-emitting device 1 including a light-emitting diode 10 and a filter structure 12, the light-emitting diode 10 including a light-transmissive substrate 11 and an epitaxial structure 13 . The filter structure 12 includes a first filter unit 121 and a second filter unit 122. The first filter unit 121 has a plurality of first high filter layers 1211 and a plurality of first low filter layers 1212. The second filter unit 122 has a plurality of second high filter layers 1221 and a plurality of second low filter layers 1222. The epitaxial structure is formed on the first surface of the transparent substrate 11. The structure includes a conductive first semiconductor layer 131, and is disposed on the transparent substrate 11 and a semiconductor light emitting layer 132. A semiconductor layer 131 is shown on page 6 of page 18, and a second conductive layer 133 is disposed on the semiconductor light-emitting layer 132, and the light-emitting structure 12 is disposed on the opposite side. The H-th light-transmissive substrate u of the transparent substrate 11 on one surface may be selected from a sapphire material, a gallium (tetra) material or a carbon-cut material as a substrate, that is, a sapphire substrate or a gallium nitride substrate or The carbon-cut substrate, and the first-conductor conductor layer 131 may be an N-type doped gallium nitride her layer, the second semiconductor layer 133 may be a P-type doped gallium indium nitride layer, and the semiconductor light-emitting layer 132 may be A layer of gallium nitride indium aluminum. The light filtering units 121 and 122 are superposed on the first surface. In this embodiment, the first filter unit 121 is stacked on the second filter unit 122. 12 2 is stacked on top of the first calender unit 121. The first high filter layer 1211 and the first low filter layers 1212 have different refractive indices, and the second high filter layers ail and the first low filter layers 1212 have different refractive indices, wherein the The first high filter layer 1211 has a larger index of refraction than the first low filter layer 1212, and the second high-gloss layer 1221 has a larger index of refraction than the second low-thin layer 1222. The first filter unit 121 of the embodiment removes the light of the first wavelength, and the second light-passing unit 12 2 removes the light of the second wavelength. . In the above, the material of the filter layer may be selected from the group consisting of cerium oxide, cerium oxide, cerium oxide, aluminum oxide, oxidation group, indium oxide, magnesium oxide 'tin oxide, and the filter layer The material types of the filter layers are used because of different refractive indices, and the high filter layers and the low filter layers respectively have different thickness ratios. The thickness of the filter units 121' 122 ranges from 1 to 1. 〇〇〇 至 to 25,000 angstroms. When the light emitting diode 1 is energized with the form number A0101 7 1 / 18 1 , the light emitting diode 10 generates light including less than a first wavelength, greater than the first wavelength and less than a second wavelength The light of the first wavelength is between 300 and 700 nm, and the light of the second wavelength is between 300 and 700 nm, and the first filter unit 121 is smaller than the first light. The light of the wavelength passes, and the second filter unit 122 passes the light of the second wavelength, the light blocking structure 12 blocks the light between the first wavelength and the second wavelength range, and the first wavelength and the second wavelength The total reflection of light between the wavelength ranges improves the extraction of light by the light-emitting device 1 and improves the luminous efficiency of the light-emitting device 1. The third figure is a schematic cross-sectional view showing a second embodiment of the light-emitting device having the filter structure. The embodiment provides a light-emitting device 2, which includes a light-emitting diode 20 and a filter structure 22. The filter structure 22 includes a first filter unit 221, a second filter unit 222, a third filter unit 223, and a fourth filter unit 224. The first filter unit 221 has a first high number. The filter layer 2211 and the plurality of first low filter layers 2212, the second filter unit 222 has a plurality of second high filter layers 2221 and a plurality of second low filter layers 2222, the third filter unit 223 has a plurality of The third high filter layer 2231 and the plurality of third low filter layers 2232, the fourth filter unit 224 has a plurality of fourth high filter layers 2241 and a plurality of fourth low filter layers 2242. The filter units 221, 222' 223, 224 alternately superimpose the high and low filter layers, and the first high filter layers 2211 and the first low filter layers 2212 have different refractive indices. The two high filter layers 2221 and the second low filter layers 2222 have different refractive indices, and the third high filter layers 2231 and the third low filter layers 2232 have different refractive indices, and the fourth The high filter layer 2241 and the fourth low filter layers 2242 have different refractive indices of Form No. A0101, page 8 of 18 pages. The materials of the filter layers are selected from the group consisting of cerium oxide, titanium oxide, cerium oxide, aluminum oxide, oxidized button 'indium oxide, and magnesium oxide tin oxide, and the filter layers are used according to different refractive indices. The material types of the filter layers, or the high filter layers and the low filter layers may have different thickness ratios. The thickness of the filter units 221, 222, and 224 ranges from 1 〇〇〇. It is between 25,000 angstroms. When the light emitting diode 20 is energized, the light emitting diode generates a light that is smaller than the first wavelength and smaller than the first wavelength and smaller than a second wavelength, which is greater than the second wavelength and smaller than a third wavelength. The light ray is larger than the third wavelength and smaller than a fourth wavelength and a light having a wavelength greater than the fourth wavelength, and the first to fourth wavelengths of light are between 300 and 700 nm. The first light-extinguishing unit 221 passes light of less than the first wavelength, and the second filter unit 222 passes light of a second wavelength, and the third filter unit 223 passes light of less than the third wavelength. The fourth filter unit 2 24 passes light of a wavelength greater than a fourth wavelength, and the filter structure 22 blocks light between the first wavelength and the second wavelength range, and also blocks between the third wavelength and the fourth wavelength range. Light, and the light between the first wavelength and the third wavelength range and the light between the third wavelength and the fourth wavelength range are totally reflected. Therefore, the filter structure 22 is used in the light-emitting device 2, and can be blocked according to requirements. Light in different wavelength ranges to improve the extraction of light and improve the purity and luminous efficiency of light. From the above, the present invention provides a light-emitting device having a filter structure and a filter structure thereof, the filter structure comprising a first filter unit and a second filter unit, wherein the filter structure is used for a light-emitting device The first filter unit of the filter structure allows light of less than the first wavelength to pass through, and the second filter unit allows light of greater than the second wavelength to pass, the filter structure resisting form number A0101 page 9 / total On page 18, M421600 passes the light between the first wavelength and the second wavelength range, which can improve the extraction degree of light and increase the light purity, and improve the excitation efficiency of the phosphor powder. Therefore, the creation is novel and progressive. And those who can be used in the industry should meet the requirements of the patent application of China's patent law. Undoubtedly, the new patent application is filed according to law, and the Prayer Council has granted patents as soon as possible. However, the above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, the shape, structure, characteristics and spirit described in the scope of the patent application are equally changed. Modifications shall be included in the scope of the patent application of this creation. BRIEF DESCRIPTION OF THE DRAWINGS [0005] The first figure is a schematic view of a conventional light-emitting device; the second figure is a schematic view of a light-emitting device with a filter structure according to a preferred embodiment of the present invention; and a third figure A schematic diagram of a light-emitting device having a filter structure in accordance with another preferred embodiment of the invention. [Main component symbol description] 106] 1 Light-emitting device 10 Light-emitting diode 11 Light-transmitting substrate 12 Filter structure 121 First filter unit 1211 First high-light layer 1212 First low-light layer Form No. A0101 No. 10 M421600
122 第二濾光單元 1221 第二高濾光層 1222 第二低濾光層 13 磊晶結構 131 第一半導體層 132 半導體發光層 133 第二半導體層 2 發光裝置 20 發光二極體 21 透光基板 22 濾光結構 221 第一濾光單元 2211 第一高渡光層 2212 第一低滤光層 222 第二濾光單元 2221 第二高濾光層 2222 第二低渡光層 223 第三濾光單元 2231 第三高濾光層 2232 第三低滤光層 224 第四濾光單元 2241 第四高濾光層 2242 第四低濾光層 23 遙晶結構 231 第一半導體層 232 半導體發光層 表單編號A0101 第11頁/共18頁 M421600 233 第二半導體層 30 透光基板 32 N型半導體層 34 半導體發光層 36 P型半導體層 38 金屬反射層 表單编號A0101 第12頁/共18頁122 second filter unit 1221 second high filter layer 1222 second low filter layer 13 epitaxial structure 131 first semiconductor layer 132 semiconductor light-emitting layer 133 second semiconductor layer 2 light-emitting device 20 light-emitting diode 21 light-transmitting substrate 22 filter structure 221 first filter unit 2211 first high light-passing layer 2212 first low filter layer 222 second filter unit 2221 second high filter layer 2222 second low light-pass layer 223 third filter unit 2231 third high filter layer 2232 third low filter layer 224 fourth filter unit 2241 fourth high filter layer 2242 fourth low filter layer 23 remote crystal structure 231 first semiconductor layer 232 semiconductor light emitting layer form number A0101 Page 11/18 pages M421600 233 Second semiconductor layer 30 Transmissive substrate 32 N-type semiconductor layer 34 Semiconductor light-emitting layer 36 P-type semiconductor layer 38 Metal reflective layer Form No. A0101 Page 12 of 18