M405058 五、新型說明： 【新型所屬之技術領域】 本創作是關於對半導體基板硏磨用的硏磨墊進行修整 的化學機械硏磨修整輪。 【先前技術】 伴隨著 LSI ( Large Scale Integrated Circuit)的配線 多層化，對半導體基板平坦化的要求也提高。半導體基板 平坦化的裝置，已知有化學機械硏磨（chemical mechanical polishing: CMP )裝置。 化學機械硏磨裝置，是邊供應泥狀硏磨劑邊將硏磨墊 滑動在半導體基板表面，藉此使半導體表面平坦化。於化 學機械硏磨裝置處理半導體基板時，硏磨墊會產生堵塞， 降低硏磨速度。於是，硏磨墊就需要利用化學機械硏磨修 整輪進行修整。 先前的化學機械硏磨修整輪，已知有複數不銹鋼形成 圓柱形狀的修整輪保持在保持具的構造。該等修整輪，是 排列在同一圓周上。 [先行技術文獻] [專利文獻] [專利文獻1 ]日本特許第3 4 8 2 3 2 1號說明書 [專利文獻2]曰本特許第3598062號說明書 【新型內容】 -3- M405058 [新型欲解決之課題] 然而’該等修整輪是需要一個一個安裝固定在保持具 ’因此安裝作業繁瑣。此外，需要將抵接於硏磨墊的各修 整輪的抵接面彼此位於同一平面內，因此需要高精度的設 計及安裝作業。於是，本創作，就以能夠使化學機械硏磨 修整輪的安裝作業及高度調整變容易爲目的。 [用以解決課題之手段] 爲了解決上述課題，本創作的第1項構成，化學機械 硏磨修整輪是透過抵接於半導體基板用的硏磨墊，對上述 硏磨墊進行修整的化學機械硏磨修整輪，其特徵爲，具有 要抵接於上述硏磨墊的抵接面，於包含上述抵接面的面內 具有以一定曲率半徑延伸成弧形的弧形部。 本創作的第2項構成，可構成爲於第1項構成中，將 上述弧形部形成爲環狀。根據第2項構成時，透過將上述 弧形部形成爲環狀，能夠使化學機械硏磨修整輪的安裝作 業及高度調整變容易。 本創作的第3項構成’可構成爲於第2項構成中，在 上述抵接面可形成朝上述弧形部半徑方向延伸的溝槽部。 根據第3項構成時，透過溝槽部能夠使更多的泥狀硏磨劑 排出。 本創作的第4項構成’可構成爲於第3項構成中，將 上述溝槽部於上述弧形部圓周方向隔著45 °間隔設置有複 數個。根據第4項構成時’能夠使泥狀硏磨劑從圓周方向 M405058 複數處有效率排出。 本創作的第5項構成’可構成爲於第1項構成中’上 述弧形部是經由將圓弧部複數配置在同一圓周上構成。根 據第5構成時，可獲得和第2構成相同的效果。 本創作的第6項構成，可構成爲於第5項構成中，將 彼此鄰接在上述弧形部圓周方向的上述圓弧部形成分開不 接觸。如此一來，泥狀硏磨劑就能夠從鄰接的圓弧部間隙 排出。 本創作的第7項構成，可構成爲於第1項〜第6項構 成中，在上述抵接面設置有複數的硬質磨粒。 [新型效果] 根據本創作時，化學機械硏磨修整輪是由一定曲率半 徑延伸成弧形的弧形部形成，因此能夠容易進行安裝作業 及高度調整》 【實施方式】 [新型之最佳實施形態] 接著，是參照第1圖的同時對化學機械硏磨裝置的槪 略構成進行說明。第1圖爲化學機械硏磨裝置的槪略圖， X軸、Y軸及Z軸是表示彼此不同正交的三軸。上部環形 轉盤11，是保持著半導體基板13。上部環形轉盤11，是 在上端面具備上部環形轉盤軸部12，繞著二點虛線所示的 軸旋轉。上部環形轉盤1 1的旋轉方向，如箭頭符號所示 -5- M405058 ，也可以是平面視時爲逆時針方向旋轉。 在上部環形轉盤11的下端，是設有護環14。護環14 ’是在化學機械硏磨裝置1動作時抵接於X-Y面方向移動 的半導體基板13，防止半導體基板13從化學機械硏磨裝 置1脫落。在上部環形轉盤1 1和半導體基板1 3之間，是 設有推壓構件15。推壓構件15，是將半導體基板13朝硏 磨墊21推壓。推壓構件15，也可以是利用空氣塡充產生 推壓力的氣囊。 硏磨墊21’是固定在轉盤22的上面。硏磨墊21，是 可使用例如聚氨酯樹脂構成。轉盤22，是在下端面具備轉 盤軸23，繞著一點虛線所示的軸旋轉。轉盤22的旋轉方 向，如箭頭符號所示，也可以是平面視時爲逆時針方向。 泥狀硏磨劑供應部3 1，是離開硏磨墊2 1位於硏磨墊 2 1的上方。泥狀硏磨劑供應部3 1，是朝硏磨墊2 1供應泥 狀硏磨劑3 2。泥狀硏磨劑3 2，也可以是二氧化矽粒子懸 浮在苛性蘇打、氨 '胺等鹼性溶液的懸浮液。二氧化矽粒 子的粒徑，也可能是5〜300nm程度。懸浮液的氫離子指 數，也可以是PH9〜12程度。 上述的構成中，化學機械硏磨裝置1，是將半導體基 板13的表面推向硏磨墊21，邊供應泥狀硏磨劑32的同時 ’使上部環形轉盤1 1及轉盤22分別旋轉，邊產生化學反 應邊機械性對半導體基板13的表面進行硏磨。半導體基 板13受到硏磨會產生異物，該異物會造成硏磨墊21堵塞 -6- M405058 修整輪保持具41，是保持著化學機械硏磨修整輪42 。化學機械硏磨修整輪42，是接觸硏磨墊21。化學機械 硏磨修整輪42，是比半導體基板13還位於轉盤22的旋轉 方向下游側。化學機械硏磨修整輪42，使藉由接觸硏磨墊 21，對硏磨墊21進行修整，消除硏磨墊21的堵塞。 其次，是參照第2圖及第3圖對化學機械硏磨修整輪 42的構成進行詳細說明。第2圖爲化學機械硏磨修整輪 g 42的平面，從上方看化學機械硏磨修整輪42時的平面圖 。第3圖爲表示化學機械硏磨修整輪42抵接面的平面圖 ，從下方看化學機械硏磨修整輪42時的平面圖。 參照第2圖及第3圖，化學機械硏磨修整輪42是以 一定的曲率半徑構成爲環狀。化學機械硏磨修整輪42，是 可使用不銹鋼構成。如第2圖所示，在化學機械硏磨修整 輪42的背面，是以90°間隔形成有一對安裝固定用孔部 42A。該等安裝固定用孔部42A，是化學機械硏磨修整輪 φ 42的板厚方向尺寸比化學機械硏磨修整輪42還短的有底 筒狀孔部。化學機械硏磨修整輪42的背面，是面對著修 整輪保持具41»未圖示的緊固螺栓，是從修整輪保持具 41側朝向安裝固定用孔部42 a鎖緊。藉由緊固螺栓的鎖 緊’使化學機械硏磨修整輪42安裝在修整輪保持具41。 如上述’只要在化學機械硏磨修整輪42圓周方向數 處位置鎖緊緊固螺栓，就能夠使化學機械硏磨修整輪42 安裝在修整輪保持具4 1。因此，是能夠減輕化學機械硏磨 修整輪42拆裝時的負擔。 Έ405058 此外’還能夠容易抑制化學機械硏磨修整輪42圓周 方向高度的不整。即，圓柱狀的修整輪複數排列在圓周方 面的方法’是會因零件數量的增加造成高度調整繁瑣。相 對於此’根據本實施形態的構成時，是只要將形成爲環狀 的化學機械硏磨修整輪42鎖緊在修整輪保持具41就完成 安裝作業，因此高度調整變容易。 於此，是參照第1圖，當將半導體基板13及化學機 械硏磨修整輪42的Y軸方向尺寸爲Y1及Y2時，Y2是 比Y1還大。即，化學機械硏磨修整輪42，是尺寸設定成 能夠涵蓋半導體基板1 3所接觸之硏磨墊2 1上的接觸區域 。如此一來，就能夠使半導體基板13硏磨時產生的多數 異物經由化學機械硏磨修整輪42修整。 參照第4圖，在化學機械硏磨修整輪42的表面，即 ，接觸硏磨墊21的化學機械硏磨修整輪42的抵接面42 B ，是排列有多數的金剛石粒。該等金剛石粒是可排列成蜂 巢狀。即，在化學機械硏磨修整輪42的抵接面42B，是 可於正三角形形成的單位格子的各頂點配置有金剛石粒。 如上述，規則性排列金剛石粒，是可使金剛石粒的分 佈沒有稀密，即使使用該修整輪，泥狀硏磨劑中的磨粒也 不會聚集在金剛石粒的密部份，能夠使半導體基板1 3表 面的微刮傷抑制成最小。 (變形例1 ) 第4圖，是變形例1的化學機械硏磨修整輪42平面 -8- M405058 圖。參照第4圖，是在化學機械硏磨修整輪4 2的抵接面 42B’形成有朝半徑方向延伸的溝槽部42C。溝槽部42C ’是於化學機械硏磨修整輪4 2的圓周方向以4 5 °間隔形 成有複數個。第4圖的點線，是表示溝槽部42 C的延伸方 向。溝槽部42 C的高度，是比化學機械硏磨修整輪42的 _ 板厚還小。溝槽部42C，其高度可以是1mm，其寬度可以 是數mm。 φ 根據變形例1的構成時，位於化學機械硏磨修整輪42 內徑區域（化學機械硏磨修整輪42所包圍的區域）的泥 狀硏磨劑，是可經由溝槽部42C排出至內徑區域外側。 (變形例2 ) 第5圖，是變形例2的分割修整輪43平面圖。參照 第5圖，分割修整輪43，是以一定曲率半徑形成爲圓弧形 狀。該分割修整輪43複數配置在同一圓周上，就可構成 φ 化學機械硏磨修整輪。根據變形例2的構成時，是可獲得 和實施形態化學機械硏磨修整輪42相同的效果。再加上 ，即使沒有變形例1的溝槽部，但透過鄰接的分割修整輪 43之間隙還是能夠排出泥狀硏磨劑。 (變形例3 ) 上述的實施形態中，在硏磨墊2 1的修整時化學機械 硏磨修整輪42爲固定著，但並不限於此創作。例如：在 硏磨墊2 1的修整時也可使化學機械硏磨修整輪42朝硏磨 -9 - M405058 墊21的半徑方向移動。如此一來，就能夠對硏磨墊21全 體進行修整。 【圖式簡單說明】 第1圖爲化學機械硏磨裝置的槪略圖。 第2圖爲化學機械硏磨修整輪的平面（背面）圖。 第3圖爲化學機械硏磨修整輪的平面（表面）圖。 第4圖爲變形例1的化學機械硏磨修整輪平面圖。 第5圖爲變形例2的分割修整輪平面圖。 【主要元件符號說明】 1 1 :上方環形轉盤 12:上方環形轉盤軸部 13 :半導體基板 1 4 :護環 15 :推壓部 21 :硏磨墊 22 :轉盤 23 :轉盤軸部 3 1 :泥狀硏磨劑供應部 3 2 :泥狀硏磨劑 4 1 :修整輪保持具 42 :化學機械硏磨修整輪 -10-M405058 V. New description: [New technical field] This is a chemical mechanical honing wheel for dressing the honing pad for honing semiconductor substrates. [Prior Art] With the multilayering of wiring of LSI (Large Scale Integrated Circuit), the demand for planarization of a semiconductor substrate is also increasing. A chemical mechanical polishing (CMP) device is known as a device for planarizing a semiconductor substrate. The chemical mechanical honing device planarizes the surface of the semiconductor by sliding the honing pad on the surface of the semiconductor substrate while supplying the pulverizing honing agent. When the chemical mechanical honing device processes the semiconductor substrate, the honing pad will cause clogging and reduce the honing speed. Therefore, the honing pad needs to be trimmed with a chemical mechanical honing wheel. In the prior chemical mechanical honing dressing wheel, it was known that a plurality of stainless steel formed into a cylindrical shape of the dressing wheel was held in the structure of the holder. The dressing wheels are arranged on the same circumference. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent No. 3 4 8 2 3 2 1 Specification [Patent Document 2] 特许本权第3598062号 [New Content] -3- M405058 [New to be solved The subject] However, 'the dressing wheel is required to be fixed one by one in the holder' so the installation work is cumbersome. Further, it is necessary to have the abutting faces of the respective dressing wheels abutting against the honing pad in the same plane, and therefore high-precision design and installation work are required. Therefore, this creation is aimed at making it easy to install and adjust the height of the chemical mechanical honing wheel. [Means for Solving the Problem] In order to solve the above-mentioned problems, the chemical mechanical honing wheel is a chemical machine that trims the honing pad by abutting against a honing pad for a semiconductor substrate. The honing wheel is characterized in that it has an abutting surface to be abutted against the honing pad, and has an arc-shaped portion extending in a curved shape with a constant radius of curvature in a surface including the abutting surface. In the second aspect of the present invention, the curved portion may be formed in a ring shape in the first configuration. According to the second aspect, the arc-shaped portion can be formed into a ring shape, and the installation work and height adjustment of the chemical mechanical honing wheel can be easily performed. The third item configuration of the present invention may be configured such that in the second item configuration, the groove portion extending in the radial direction of the curved portion may be formed on the abutting surface. According to the third aspect, more of the muddy honing agent can be discharged through the groove portion. In the third aspect of the present invention, the groove portion may be provided in plural at intervals of 45° in the circumferential direction of the curved portion. According to the fourth item, the mud-like honing agent can be efficiently discharged from the circumferential direction M405058. The fifth item configuration of the present invention can be configured in the first item configuration. The curved portion is configured by arranging the arc portions in plural on the same circumference. According to the fifth configuration, the same effects as those of the second configuration can be obtained. In the sixth aspect of the present invention, in the fifth configuration, the circular arc portions adjacent to each other in the circumferential direction of the curved portion may be formed to be separated from each other. In this way, the muddy honing agent can be discharged from the adjacent arc portion gap. In the seventh aspect of the present invention, the first to sixth items may be configured such that a plurality of hard abrasive grains are provided on the abutting surface. [New effect] According to this creation, the chemical mechanical honing dressing wheel is formed by an arc-shaped portion extending from a certain radius of curvature into an arc shape, so that the mounting work and the height adjustment can be easily performed. [Embodiment] [Best implementation of the new type [Formula] Next, the schematic configuration of the chemical mechanical honing device will be described with reference to Fig. 1 . Fig. 1 is a schematic diagram of a chemical mechanical honing device, in which the X-axis, the Y-axis, and the Z-axis are three axes that are orthogonal to each other. The upper ring turntable 11 holds the semiconductor substrate 13. The upper ring-shaped turntable 11 is provided with an upper ring-shaped turntable shaft portion 12 on the upper end surface, and rotates about an axis indicated by a two-dot chain line. The direction of rotation of the upper annular turntable 1 1 is -5-M405058 as indicated by the arrow symbol, or it may be counterclockwise when viewed in plan. At the lower end of the upper ring turntable 11, a guard ring 14 is provided. The guard ring 14' is a semiconductor substrate 13 that moves in the X-Y plane direction when the chemical mechanical honing device 1 operates, and prevents the semiconductor substrate 13 from coming off the chemical mechanical honing device 1. Between the upper ring-shaped turntable 1 1 and the semiconductor substrate 1 3, a pressing member 15 is provided. The pressing member 15 presses the semiconductor substrate 13 toward the honing pad 21. The pressing member 15 may be an air bag that generates a pressing force by air charging. The honing pad 21' is fixed to the upper surface of the turntable 22. The honing pad 21 can be formed using, for example, a urethane resin. The turntable 22 is provided with a turn shaft 23 on the lower end surface, and rotates about an axis indicated by a dotted line. The direction of rotation of the turntable 22, as indicated by the arrow symbol, may also be counterclockwise in plan view. The mud-like honing agent supply unit 3 1 is located above the honing pad 2 1 away from the honing pad 2 1 . The mud-like honing agent supply unit 3 1 supplies a mud-like honing agent 3 2 to the honing pad 2 1 . The muddy honing agent 3 2 may also be a suspension of cerium oxide particles suspended in an alkaline solution such as caustic soda or ammonia 'amine. The particle size of the cerium oxide particles may also be about 5 to 300 nm. The hydrogen ion index of the suspension may also be in the range of pH 9 to 12. In the above-described configuration, the chemical mechanical honing device 1 rotates the surface of the semiconductor substrate 13 toward the honing pad 21 while supplying the mud honing agent 32 while rotating the upper ring-shaped turntable 1 1 and the turntable 22, respectively. The surface of the semiconductor substrate 13 is mechanically honed while generating a chemical reaction. When the semiconductor substrate 13 is subjected to honing, foreign matter is generated, and the foreign matter causes the honing pad 21 to be clogged. The -6-M405058 dressing wheel holder 41 holds the chemical mechanical honing wheel 42. The chemical mechanical honing wheel 42 is a contact honing pad 21. The chemical mechanical honing wheel 42 is located on the downstream side of the rotation direction of the turntable 22 than the semiconductor substrate 13. The chemical mechanical honing of the dressing wheel 42 causes the honing pad 21 to be trimmed by contact with the honing pad 21 to eliminate clogging of the honing pad 21. Next, the configuration of the chemical mechanical honing dressing wheel 42 will be described in detail with reference to Figs. 2 and 3. Fig. 2 is a plan view of the chemical mechanical honing wheel g 42 and the chemical mechanical honing wheel 42 as seen from above. Fig. 3 is a plan view showing the abutting surface of the chemical mechanical honing wheel 42, and a plan view of the chemical mechanical honing of the dressing wheel 42 as seen from below. Referring to Figures 2 and 3, the chemical mechanical honing wheel 42 is formed in a ring shape with a constant radius of curvature. The chemical mechanical honing wheel 42 can be made of stainless steel. As shown in Fig. 2, on the back surface of the chemical mechanical honing wheel 42, a pair of mounting fixing holes 42A are formed at intervals of 90 degrees. The mounting fixing hole portion 42A is a bottomed cylindrical hole portion in which the thickness of the chemical mechanical honing wheel φ 42 is shorter than the chemical mechanical honing wheel 42. The back surface of the chemical mechanical honing wheel 42 is a fastening bolt that faces the dressing wheel holder 41»not shown, and is locked from the dressing wheel holder 41 side toward the mounting fixing hole portion 42a. The chemical mechanical honing wheel 42 is attached to the dressing wheel holder 41 by the locking of the fastening bolts. As described above, the chemical mechanical honing wheel 42 can be attached to the dressing wheel holder 41 as long as the fastening bolt is locked at a position in the circumferential direction of the chemical mechanical honing wheel 42. Therefore, it is possible to reduce the burden on the chemical mechanical honing of the dressing wheel 42. Έ405058 In addition, it is also possible to easily suppress the irregularity in the circumferential direction of the chemical mechanical honing wheel 42. That is, the method of arranging the plurality of cylindrical dressing wheels in the circumferential direction is cumbersome because of the increase in the number of parts. According to the configuration of the present embodiment, the chemical mechanical honing wheel 42 formed in a ring shape is locked to the dressing wheel holder 41 to complete the mounting work, so that the height adjustment becomes easy. Here, referring to Fig. 1, when the dimensions of the semiconductor substrate 13 and the chemical mechanical honing wheel 42 in the Y-axis direction are Y1 and Y2, Y2 is larger than Y1. That is, the chemical mechanical honing wheel 42 is sized to cover the contact area on the honing pad 2 1 to which the semiconductor substrate 13 is in contact. As a result, most of the foreign matter generated during the honing of the semiconductor substrate 13 can be trimmed via the chemical mechanical honing wheel 42. Referring to Fig. 4, the surface of the chemical mechanical honing wheel 42, i.e., the abutting surface 42B of the chemical mechanical honing wheel 42 that contacts the honing pad 21, is a plurality of diamond grains arranged. The diamond particles are arranged in a honeycomb shape. That is, in the abutting surface 42B of the chemical mechanical honing wheel 42, the diamond granules may be disposed at the apexes of the unit lattice formed by the equilateral triangle. As described above, the regular arrangement of the diamond particles is such that the distribution of the diamond particles is not dense, and even if the dressing wheel is used, the abrasive grains in the mud-like honing agent do not collect in the dense portion of the diamond particles, and the semiconductor can be made. The micro-scratch suppression of the surface of the substrate 13 is minimized. (Modification 1) Fig. 4 is a plan view of the chemical mechanical honing wheel 42 of the modification 1 - 8 - M405058. Referring to Fig. 4, a groove portion 42C extending in the radial direction is formed on the abutting surface 42B' of the chemical mechanical honing wheel 4. The groove portions 42C' are formed in plural numbers at intervals of 45 ° in the circumferential direction of the chemical mechanical honing wheel 4. The dotted line in Fig. 4 indicates the extending direction of the groove portion 42C. The height of the groove portion 42 C is smaller than the thickness of the chemical mechanical honing wheel 42. The groove portion 42C may have a height of 1 mm and a width of several mm. φ According to the configuration of the first modification, the muddy honing agent located in the inner diameter region of the chemical mechanical honing dressing wheel 42 (the region surrounded by the chemical mechanical honing wheel 42) can be discharged through the groove portion 42C. Outside the diameter area. (Modification 2) FIG. 5 is a plan view of the divided dresser 43 of Modification 2. Referring to Fig. 5, the split dressing wheel 43 is formed in a circular arc shape with a constant radius of curvature. The plurality of split dressing wheels 43 are disposed on the same circumference to form a φ chemical mechanical honing wheel. According to the configuration of the second modification, the same effects as those of the chemical mechanical honing wheel 42 of the embodiment can be obtained. Further, even if there is no groove portion of the first modification, the mud-like honing agent can be discharged through the gap between the adjacent divided dressing wheels 43. (Modification 3) In the above embodiment, the chemical mechanical honing wheel 42 is fixed during the dressing of the honing pad 2 1 , but the invention is not limited thereto. For example, the chemical mechanical honing wheel 42 can also be moved in the radial direction of the honing -9 - M405058 pad 21 during the dressing of the honing pad 2 1 . In this way, the honing pad 21 can be completely trimmed. [Simple description of the drawing] Fig. 1 is a schematic diagram of a chemical mechanical honing device. Figure 2 is a plan view of the chemical mechanical honing wheel. Figure 3 is a plan (surface) diagram of a chemical mechanical honing wheel. Fig. 4 is a plan view showing the chemical mechanical honing dressing wheel of Modification 1. Fig. 5 is a plan view showing the divided dressing wheel of Modification 2. [Main component symbol description] 1 1 : Upper ring turntable 12: Upper ring turntable shaft portion 13 : Semiconductor substrate 1 4 : Retaining ring 15 : Pushing portion 21 : Honing pad 22 : Turntable 23 : Turntable shaft portion 3 1 : Mud Shape honing agent supply part 3 2 : Mud-like honing agent 4 1 : Dressing wheel holder 42 : Chemical mechanical honing dressing wheel -10-