M400382 五、新型說明： 【新型所屬之技術領域】 本新型是有關於化學機械拋光的加工裝置’且特別 是有關於一種超音波化學機械拋光的加工裝置。 【先前技術】 化學機械拋光（Chemical Machine Polishing ; 0^卩）為一 種精密拋光加工法，結合化學蝕刻與機械研磨之加工方 法。其原理將晶圓置在承載體(Carrier or Head)與一表面承 載拋光墊的旋轉工作台之間，同時浸在含有懸浮磨粒、氧 化劑、活性劑的酸性或鹼性溶液，晶圓相對於拋光墊運動， 在化學蝕刻與磨削兩個材料移除機制交互作用下，達成平 坦化。 然而’於晶圓半導體產業中，隨製程朝奈来化演進， 些微的表面不平整都會在後續的曝光顯影製程中造成誤 差’習知所採用的研磨方法多以二維的方式進行，細緻度 仍不足；因此，吾人莫不致力於提升晶圓表面平坦度之技 術，以配兮積體電路朝更精巧、微型演進之趨勢。 【新型内容】 因此，本新型之一技術態樣在於提供一種超音波輔助 化：機械拋光機構以克服研磨細緻度不足的問題，進而提 升晶圓表面平垣度’以利後續製程精密化。 依據本新型—實施方式，—種超音波輔助化學機械拋 M400382 光機構包含一本體、一支架、一迴轉裝置、一超音波產生 器、一超音波換能器及一研磨治具。支架與本體相樞接。 迴轉裝置位於本體上，用以帶動支架相對於本體轉動。超 音波產生器位於支架内。超音波換能器與超音波產生器相 連，用以將超音波產生器所產生之超音波轉換為一機械振 動，且超音波產生器所產生之超音波方向為縱向。其中， •超音波換能器可為一壓電振動子或一磁致伸縮式振動子。 研磨治具裝載於支架上，其中，研磨治具為一鑽石修整器。 鲁此外，本實施方式之超音波輔助化學機械拋光機構更 包含一放大器、一砝碼、一套筒、一縱向螺桿、一手搖柄、 一橫向螺桿、一馬達及一工作平台。放大器一端與超音波 換能器相連，另一端與研磨治具相接觸，放大器用以放大 該超音波換能器之機械振動的振幅。站碼加載於支架上。 套筒設置於支架上，用以固定砝碼於支架上。縱向螺桿與 本體相連。手搖柄與縱向螺桿相連，用以使本體沿縱向螺 桿進行縱向位移。橫向螺桿與本體相連。馬達與橫向螺桿 0相連，用以使本體沿橫向螺桿進行橫向位移。工作平台用 •以放置_工作件，工作平台可相對於支架轉動，使研磨治 具對工作件進行研磨。 阳… 因此γ本新型上述實施方式之超音波輔助化學機械拋 光機構’藉由超音波產生器配合超音波換能器將超音波傳 至研磨治具，使研磨治具上的顆粒受激振而撞擊工作件， 如此-來，既沒有熱應力的存在，卫具模造成本低，亦可 雇用較低技術工人從事高技術性的精密加工，最重要的是 除了二維的研磨方向外’增加了縱向第三維度的研磨方 5 M400382 進一步使後續製 向可提升工作件表面的光滑及平整度 程趨於精密化。 【實施方式】M400382 V. New description: [New technical field] The new type is a processing device for chemical mechanical polishing' and in particular relates to a processing device for ultrasonic chemical mechanical polishing. [Prior Art] Chemical Machine Polishing (0^卩) is a precision polishing process that combines chemical etching and mechanical grinding. The principle is to place the wafer between a carrier or head and a rotating table with a polishing pad on the surface, while immersing in an acidic or alkaline solution containing suspended abrasive particles, an oxidant, and an active agent. Polishing pad movement, flattening under the interaction of chemical etching and grinding two material removal mechanisms. However, in the wafer semiconductor industry, with the evolution of the process, some surface irregularities will cause errors in the subsequent exposure and development process. The grinding methods used in the past are mostly carried out in two dimensions. Still not enough; therefore, we are not committed to improving the flatness of the wafer surface, in order to match the enthalpy circuit to a more sophisticated, micro-evolution trend. [New content] Therefore, one of the technical aspects of the present invention is to provide an ultrasonic assisting mechanism: a mechanical polishing mechanism to overcome the problem of insufficient polishing fineness, thereby improving the flatness of the wafer surface to facilitate subsequent process precision. According to the novel-embodiment, the ultrasonic assisted chemical mechanical polishing M400382 optical mechanism comprises a body, a bracket, a rotating device, an ultrasonic generator, an ultrasonic transducer and a grinding fixture. The bracket is pivotally connected to the body. The rotating device is located on the body to drive the bracket to rotate relative to the body. The ultrasonic generator is located inside the bracket. The ultrasonic transducer is coupled to the ultrasonic generator to convert the ultrasonic waves generated by the ultrasonic generator into a mechanical vibration, and the ultrasonic wave generated by the ultrasonic generator is longitudinal. Wherein, the ultrasonic transducer can be a piezoelectric vibrator or a magnetostrictive vibrator. The grinding fixture is mounted on the bracket, wherein the grinding fixture is a diamond trimmer. Further, the ultrasonic assisted chemical mechanical polishing mechanism of the present embodiment further comprises an amplifier, a weight, a sleeve, a longitudinal screw, a handle, a transverse screw, a motor and a working platform. One end of the amplifier is connected to the ultrasonic transducer, and the other end is in contact with the grinding fixture, and the amplifier is used to amplify the amplitude of the mechanical vibration of the ultrasonic transducer. The station code is loaded on the stand. The sleeve is disposed on the bracket for fixing the weight on the bracket. The longitudinal screw is connected to the body. The hand crank is coupled to the longitudinal screw for longitudinal displacement of the body along the longitudinal screw. The transverse screw is connected to the body. The motor is coupled to the transverse screw 0 for lateral displacement of the body along the transverse screw. For the work platform • To place the work piece, the work platform can be rotated relative to the bracket to allow the grinding tool to grind the work piece. Therefore, the ultrasonic assisted chemical mechanical polishing mechanism of the above-described embodiment of the present invention transmits ultrasonic waves to the polishing fixture by the ultrasonic generator and the ultrasonic transducer, so that the particles on the polishing fixture are excited. Impacting the work piece, so - there is no thermal stress, the guard mold is low, and the lower-tech workers can be hired for high-tech precision machining. The most important thing is to increase the addition of the two-dimensional grinding direction. The longitudinal third dimension of the grinding square 5 M400382 further simplifies the smoothing and flattening of the surface of the subsequent workpiece. [Embodiment]
=式超音波加玉機主要應用於鑽孔及切肖彳，由於此 類!^有無法添加荷重、震動源無法負載較大之鑽石工 具及可裝載之刀具面積較小以至於加卫面積較小等問題。 另外傳先式超音波加工機較易於定向力0工’如鑽孔、融 接等，難以做萬向加工如拋光、研磨。 第1圖繪示本新型一實施方式之超音波輔助化學機械 拋光機構的立體圖。第2 ®繪4丨圖之超音波輔助化學 機械拋光機構的局部示意圖。請同時參照第】圖及第2圖， 如圖所示，超音波輔助化學機械拋光機構1〇〇包含一本體 U0、一支架120、一迴轉裝置13〇、一超音波產生器14〇、 一超音波換能器150及一研磨治具16〇。 支架120與本體11〇相樞接。迴轉裝置丨位於本體 11〇上’用以帶動支架120相對於本體11()轉動。 超音波產生器140位於支架120内。超音波換能器15〇 與超音波產生器140相連，用以將超音波產生器14〇所產 生的高頻電振動轉換換成高頻的機械振動，其中，超音波 換能器150可為一壓電振動子或一磁致伸縮式振動子。值 得一提的是，本實施方式之超音波輔助化學機械拋光機構 100的超音波產生器140所產生之超音波方向為縱向β研 磨治具160裝載於支架120上’其中，研磨治具16〇可為 一鑽石修整器。 6 實施方式之超音波輔助化學機械拋光機構100是利 阿頻振動波透過介質來加工硬脆的材料。首先，利用超 音波換能窃150將超音波產生器14〇產生的高頻率電能轉 換為高頻率的振動波，使裝載於超音波換能器15〇下方的 研磨治具160以每秒20，_至,】3〇，_次的頻率，及〇 〇5咖 到0.125mm的振幅作直線連動，迫使在研磨治具下方 •的磨料顆粒受到激振而撞擊工作件101。由於研磨治具16〇 的顆粒與工作件ιοί的接觸時間很短，約1/zs至1〇"s， •且接觸面積很小，故顆粒撞擊到工作件101的應力很大， 大到足以微剝及侵蝕工作件，最後工作件1〇1逐漸形成與 研磨治具160形狀相似，但是凹凸完全相反的所須工作件 101。同時，藉由增加縱向第三維度的研磨方向，來達到提 升工作件表面的光滑及平整度的目的。 此外’本實施方式之超音波輔助化學機械拋光機構1〇〇 更包含一放大器170、一砝碼180、一套筒181、一縱向螺 桿190、一手搖柄191、一橫向螺桿192、一馬達193及一 φ 工作平台102。 放大器i70 —端與超音波換能器150相連i另—端與 研磨治具160相接觸，放大器17〇用以放大超音波換能器 150之機械振動的振幅。同時，本實施方式之超音波輔助 化學機械拋光機構1〇〇的放大器170具萬向的功能，呈半 圓形與研磨治具160相接觸，確保運轉時研磨治具面 與工作件101保持平行，以提高產品的製作良率並增加研 磨治具16〇的壽命。 於化學機械拋光（Chemical Machine Polishing ; CMP) M400382 中’移除率可分為機械拋光率及化學反應速率兩個部分， 以機械抛光率的性質來說，若荷重過大，工作件1〇丨表面 易有薄膜剝落或粗大的刻（Scratch)，材料移除率變大；反 之’若荷重過小’則無法彰顯研磨的效果《因此’適當的 荷重需要經過反覆的實驗而得到最佳值。為此，本實施方 式之超音波輔助化學機械拋光機構100設有可添加荷重的 -機制’將站碼180加載於支架120上，並藉由套筒181將 砝碼180固定於支架120上，經由多次實驗，可找出最適 # 當的荷重值，進而達成最佳的研磨效果。 縱向螺桿190與本體11〇相連，手搖柄191與縱向螺 桿190相連，用以使本體11〇沿縱向螺桿19〇進行縱向位 移。橫向螺桿192與本體11〇相連，馬達193與橫向螺桿 192相連，用以使本體11〇沿橫向螺桿192進行橫向位移。 工作平台102用以放置一工作件1〇丨，工作平台1〇2可相 對於支架120轉動’使研磨治具160對工作件101進行研 磨。藉由縱向螺桿190及橫向螺桿192位移的裝置，使研 泰磨治具160可與工作平台102上的工作件1〇1保有適當的 矩離，以逹到最佳的研磨效果。 由上述實施方式可知，應用本新型之超音波輔助化學 機械拋光機構100利用超音波產生器140產生縱向的超音 凌，來增加縱向第三維度的研磨方向，超音波向下傳遞至 研磨治具160，使研磨治具160的研磨顆粒與工作件1〇1 表面發生撞擊，進而使工作件1〇1表面更為平整光滑。另 外，本新型之超音波輔助化學機械拋光機構1〇〇可負載較 大的研磨治具160 ’可研磨加工的面積亦較大。此外，放 8 M400382 大器170具萬向的功能，可提高產品的製作良率並增加研 磨治具160的壽命。 雖然本新型已以一實施方式揭露如上，然其並非用以 限定本新型，任何熟習此技藝者，在不脫離本新型之精神 和範圍内，當可作各種之更動與潤飾，因此本新型之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 _ 第1圖繪示本新型一實施方式之超音波輔助化學機械 拋光機構的立體圖； 第2圖繪示第1圖之超音波輔助化學機械拋光機構的 局部不意圖。 【主要元件符號說明】 100 :超音波輔助化學機械拋光機構 101 :工作件 • 102 :工作平台 -110 :本體 120 :支架 130 :迴轉裝置 140 :超音波產生器 150 :超音波換能器 160 :研磨治具 170 :放大器 18 0 :石去碼 M400382 181 190 191 192 193 套筒 縱向螺桿 手搖柄 橫向螺桿 馬達The type of ultrasonic plus jade machine is mainly used for drilling and cutting, because of the kind of diamond tools that can't add load, the vibration source can't load much, and the size of the loadable tool is small, so that the area is larger. Small and other issues. In addition, the pre-external ultrasonic processing machine is easier to orientate, such as drilling, fusion, etc., and it is difficult to perform universal machining such as polishing and grinding. Fig. 1 is a perspective view showing an ultrasonic assist chemical mechanical polishing mechanism according to an embodiment of the present invention. Part 2: Diagram of the Ultrasonic Auxiliary Chemical Mechanical Polishing Mechanism of Figure 2 Please refer to the first figure and the second figure. As shown in the figure, the ultrasonic assisted chemical mechanical polishing mechanism 1A includes a body U0, a bracket 120, a rotating device 13A, an ultrasonic generator 14A, and a The ultrasonic transducer 150 and a grinding fixture 16 are. The bracket 120 is pivotally connected to the body 11b. The turning device is located on the body 11' to rotate the bracket 120 relative to the body 11 (). The ultrasonic generator 140 is located within the bracket 120. The ultrasonic transducer 15A is connected to the ultrasonic generator 140 for converting the high-frequency electrical vibration generated by the ultrasonic generator 14A into a high-frequency mechanical vibration, wherein the ultrasonic transducer 150 can be A piezoelectric vibrator or a magnetostrictive vibrator. It is to be noted that the ultrasonic direction generated by the ultrasonic generator 140 of the ultrasonic assisted chemical mechanical polishing mechanism 100 of the present embodiment is that the longitudinal β abrasive jig 160 is mounted on the holder 120, and the grinding jig 16〇 Can be a diamond trimmer. 6 The ultrasonic assist chemical mechanical polishing mechanism 100 of the embodiment is a material in which a vibration wave is transmitted through a medium to process a hard and brittle material. First, the high-frequency electric energy generated by the ultrasonic generator 14A is converted into a high-frequency vibration wave by the ultrasonic transducer 150, so that the grinding jig 160 loaded under the ultrasonic transducer 15 is 20 per second. _To, 3 〇, _ times the frequency, and 〇〇 5 咖 to 0.125 mm amplitude for linear linkage, forcing the abrasive particles under the grinding fixture to be excited to hit the workpiece 101. Since the contact time between the particles of the grinding fixture 16 与 and the workpiece ιοί is short, about 1/zs to 1 〇"s, and the contact area is small, the stress of the particles hitting the workpiece 101 is large, so large Sufficient to micro-peel and erode the work piece, and finally the work piece 1〇1 gradually forms the required work piece 101 which is similar in shape to the grinding jig 160 but has the opposite curvature. At the same time, the purpose of improving the smoothness and flatness of the surface of the workpiece is achieved by increasing the grinding direction of the third dimension in the longitudinal direction. In addition, the ultrasonic assisted chemical mechanical polishing mechanism 1 of the present embodiment further includes an amplifier 170, a weight 180, a sleeve 181, a longitudinal screw 190, a handle 191, a transverse screw 192, and a motor 193. And a φ working platform 102. The amplifier i70 is connected to the ultrasonic transducer 150 at the other end and is in contact with the grinding fixture 160. The amplifier 17 is used to amplify the amplitude of the mechanical vibration of the ultrasonic transducer 150. At the same time, the amplifier 170 of the ultrasonic assisted chemical mechanical polishing mechanism of the present embodiment has a universal function and is semicircularly in contact with the grinding fixture 160, ensuring that the grinding fixture surface is parallel to the workpiece 101 during operation. In order to improve the production yield of the product and increase the life of the polishing fixture 16 。. In Chemical Machine Polishing (CMP) M400382, the removal rate can be divided into two parts: mechanical polishing rate and chemical reaction rate. In terms of the mechanical polishing rate, if the load is too large, the workpiece 1 surface It is easy to have a film peeling or a thick scratch (Scratch), the material removal rate becomes larger; on the contrary, if the load is too small, the effect of the grinding cannot be demonstrated. Therefore, the proper load needs to be subjected to repeated experiments to obtain the optimum value. To this end, the ultrasonic assisted chemical mechanical polishing mechanism 100 of the present embodiment is provided with a load-loading mechanism-loading the station code 180 on the bracket 120, and the weight 180 is fixed to the bracket 120 by the sleeve 181. Through many experiments, you can find the optimum load value to achieve the best grinding results. The longitudinal screw 190 is coupled to the body 11A, and the crank handle 191 is coupled to the longitudinal screw 190 for longitudinal displacement of the body 11〇 along the longitudinal screw 19〇. The transverse screw 192 is coupled to the body 11 , and the motor 193 is coupled to the transverse screw 192 for lateral displacement of the body 11 〇 along the transverse screw 192. The work platform 102 is used to place a work piece 1〇丨, and the work platform 1〇2 can be rotated relative to the support 120 to cause the grinding jig 160 to grind the work piece 101. By means of the displacement of the longitudinal screw 190 and the transverse screw 192, the grinding tool 160 can be properly spaced from the workpiece 1〇1 on the work platform 102 to achieve an optimum grinding effect. It can be seen from the above embodiment that the ultrasonic assisted chemical mechanical polishing mechanism 100 of the present invention uses the ultrasonic generator 140 to generate a longitudinal supersonic ridge to increase the longitudinal direction of the third dimension, and the ultrasonic wave is transmitted downward to the grinding fixture. 160, causing the abrasive particles of the grinding fixture 160 to collide with the surface of the workpiece 1〇1, thereby making the surface of the workpiece 1〇1 smoother and smoother. In addition, the ultrasonic assisted chemical mechanical polishing mechanism of the present invention has a large area for grinding and grinding. In addition, the 180 M400382 large-scale 170 universal function can improve the production yield of the product and increase the life of the grinding fixture 160. Although the present invention has been disclosed in an embodiment as described above, it is not intended to limit the present invention. Any one skilled in the art can make various changes and retouchings without departing from the spirit and scope of the present invention. The scope of protection is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing an ultrasonic assist chemical mechanical polishing mechanism according to an embodiment of the present invention; and FIG. 2 is a partial schematic view showing the ultrasonic assist chemical mechanical polishing mechanism of FIG. 1. [Main component symbol description] 100: Ultrasonic-assisted chemical mechanical polishing mechanism 101: Working member • 102: Work platform-110: Main body 120: Bracket 130: Swing device 140: Ultrasonic generator 150: Ultrasonic transducer 160: Grinding jig 170: Amplifier 18 0 : Stone removal code M400382 181 190 191 192 193 Sleeve longitudinal screw hand crank transverse screw motor