M382588 五、新型說明： 【新型所屬之技術領域】 [0001] 本創作係有關一種發光二極體，尤指一種高功率的發光 二極體。 【先前技術】 [0002] 目前為了提昇發光二極體本身亮度，所以有許多的高功 率發光二極體被製造出來。該等高功率發光二極體可以 產生極高亮度的光源，在運用上僅需要幾個發光二極體 即可達到照明及顯示時所需之亮度。雖然高功率發光二 極體可產生極高亮度的光源，相對也造成有極高熱源的 產生。 [0003] 由於高功率發光二極體所產生的高熱源將會影響到高功 率發光二極體的使用壽命，因此都會在高功率發光二極 體製作時，在基座内部結合一散熱塊，該散熱塊與該發 光晶片固接後，該發光晶片所產生的熱源將直接傳遞於 該散熱塊上，再由散熱塊將熱源散去。此種的高功率發 光二極體為具有良好的反射率，將於凹穴的表面上塗佈 一層銀材料，但是由銀材料會因為環境的水氣及使用時 間久後，使得銀材料變黑，所以於該銀材料的表面上再 塗佈一層保護層（以玻璃為材料）。由於發光晶片固晶於 保護層上將會使發光晶片所產生的熱源無法有效的傳遞 於散熱塊上，直接影響到高功率發光二極體的散熱問題 〇 【新型内容】 表單編號A0101 第4頁/共18頁 M3-82588 [0004] 因此，本創作之主要目的，在於解決上述問題，本創作 提出一種解決技術，將散熱塊直接設於打線區的下方， 以提昇散熱效果。 [0005] 為達上述之目的，本創作提供一種發光二極體的承載結 構改良，包括： [0006] 一載體，其上具有一底座，該底座具有一正面及一背面 ，該底座的正面周圍上凸設有一圍牆，該圍牆内圍成有 一凹穴；另，於底座的兩侧各具有一第一貫穿孔，該二 個第一貫穿孔上各具有一第二貫穿孔； [0007] 二散熱塊，係設於該二個第一貫穿孔中.，其上具有一第 一端面及一第二端面； [0008] 一電路層，以設於底座内部，並與該二個散熱塊的第一 端面貼合，該電路層上具有一第一導電線路及一第二導 電線路，該第一導電線路上具有第一焊接部及第二焊接 部，該第二導電線路上具有一第三焊接部，該第一焊接 部由第二貫穿孔外露，該第二及第三焊接部由另一第二 貫穿孔外露； [0009] —打線組，係由鎳及銀、金等材料所組，以鎳層電性連 結於該第二貫穿孔外露的第一焊接部，再以金屬層設於 該鎳層的表面上，以完成第一打線區，該另一第二貫穿 孔外露的第二及第三焊接部的表面上電性連結一鎳層， 再以金屬層設於該鎳層的表面上，以完成第二打線區及 第三打線區； [0010] 一反射層，設於底座上的第二貫穿孔一側至包圍住另一 表單编號A0101 第5頁/共18頁 M382588 [0011] [0012] [0013] [0014] [0015] '11：： [0016] 表單編號A0101 個第二貫穿孔周圍的表面上，該反射層具有一第—表面 及一第二表面，該第一表面可反射發光晶片所產生的光 源；另，於第二表面電性連結一鎳層，再以金屬層設於 該鎳層的表面上； 一保護層，設於該反射層的第一表面； 一電極組，係設於二散熱塊的第二端面及底座的背面上 ，該電極組係由一銀層、一鎳層及一金屬層組成； 藉由，二散熱塊設於打線區的下方，以提昇導熱速率， 降低發光二極體在操作時内部溫度，進而延長發光二極 體的使用壽命。 【實施方式】 ΐΙι.Ρ 兹有關本創作之技術内容及詳細說明，現配合圖式說明 如下： 明參閱第一、二、二、四圖，係本創作之發光二極體的 俯視及背面與在第一圖的3-3位置斷面剖視與第一圖在 4-4位置斷面剖視示意圖。如圖所示：本創作之發光二極 體的承載結構改良’包括：一載體1、二散熱塊2、一電 路層3 、一打線組4、一反射層5、一保護層6及一電極組 該載體1，其上具有一底座11，該底座1丨具有一正面m 及一背面112 ’該底座11的正面111周圍上凸設有一圍赌 12，s玄圍牆12内圍成有一凹穴13。另，於底座11的兩側 各具有一第一貫穿孔14、14’ ’該二個第一貫穿孔η、 14 上各具有一第二貫穿孔15、15’ 。該二個第一貫穿 第6頁/共18頁 [0017]M382588 孔14、14的内役係大於或等於該二個第二貫穿孔i5、 15，的内徑。在本圖式中，載體i，係以陶瓷為材料。 該二散熱塊2，係設於該二個第—貫穿孔14、14，中，其 上具有第一知面21及第二端面22，該第二端面22可外露 於該底座11的背面112。在本圖式中，該散熱塊2由-複數 銀條（Ag Slug)組成。 [0018] 該電路層3，以設於底座π内部，並與該二個散熱塊2的 第一端面21貼合，該電路層3上具有一第一導電線路31及 一第二導電線路32(請參閱第五圖所示），該第一導電線 路31上具有第一焊接部311及第二焊接部312，該第二導 電線路32上具有一第三焊接部3“，該第一焊接部311由 第二貫穿孔15外露，該第a及第三焊接部312、321由另 一第二貫穿孔15，外露❶在本圖式中，電路層3,係以銀 為材料。 Λ [0019] 該打線組4，係由鎳及銀、金等材料所組，以鎳層41電性 連結於該第二貫穿孔15外露的第一焊接部311，再以金屬 層42設於該鎳層41的表面上，以完成第一打線區4〇。同 時於該第二貫穿孔15,外露的第二及第三焊接部312 ' 321的表面上電性連結一鎳層41，再以金屬層42設於該鎳 層41的表面上’以完成第二打線區4〇a及第三打線區4〇b 。在本圖式中，該金屬層42為銀或金之任一種。 該反射層5，係以銀為材料，所設位置於底座11上的第二 貫穿孔15，一側至包圍住另一個第二貫穿孔15周圍的表 面上（請參閱第六圖所示），該反射層5上具有—第一表面 表單編號A0101 第7頁/共18頁 [0020] M382588 51及一第二表面52，該第一表面51大於該第二表面52， 該第一表面51可反射發光晶片（圖中未示）所產生的光源 。另，於反射層5的第二表面52電性連結一鎮層53，再以 金屬層54設於該鎳層53的表面上。在本圖式中，該金屬 層54為銀或金之任一種。 [0021] 該保護層6，係以透明陶瓷或玻璃之任一種材料。該透明 陶瓷材料為利用人工合成的化學原料，諸如氧化鋁、氧 化鎂、氧化鈣、氧化鈹、氧化锆、氟化鎂、氟化鈣、氟 化鑭、硫化鋅、硒化辞、碲化鎘等。該保護層6設於該反 射層5的第一表面51。 • * [0022] .該電極組7，係設於散熱塊2的第二端面22及底座11的背 面111上，該電極組7係由一銀層71設於該第二端面22及 底座11的背面111上，再於該銀層71表面上設有一層鎳層 72，再由錄層72的表面上設有一銀層或金層的金屬層73 〇 [0023] 請參閱第七圖，係本創作之發光二極體固晶及打金線俯 視視示意圖。如圖所示：在發光二極體的載體1製作完成 後，將發光二極的凹穴13的保護層6上，可黏固至少一顆 以上的發光晶片8，在於該發光晶片8上電性連結二金屬 導線9，該二金屬導線9各別電性連結於該第一打線區40 及第三打線區40b上。 [0024] 在固晶及打金線後，於凹穴13内部注入環氧樹脂或矽膠 材料，以形成該發光二極體封裝結構的透鏡10，以提供 光線聚焦之用。 表單編號A0101 第8頁/共18頁 M382588 [0025] [0026] [0027] [0028] [0029] [0030] [0031] [0032] [0033] [0034] 表單編號Α0101 請參閱第八圖，係本創作之使用狀態示意圖。如圖所示 :在該發光晶片8被點亮，該發光晶片8所產生的光線101 照射於該反射層5上，以提升反射率，使該光線101反射 集中由透鏡8中央處投射出去，讓光照射亮度提升。同時 ，該保護層6可以避免反射金層5受冰氣或使用時間久影 響，而使得反射層5變質或變色，造成光反射率降低，讓 光照射亮度變低等事情發生。 進一步，在於該發光二極體的第二打線區40a上可電性連 結一防靜電元件（晶片），以防止發光二極體在正常使用 下受到靜電干擾。 '^：J \ '； A r '" ' .¾. +; : 上述僅為本創作之較佳實施ϋ而:已，並非用來限定本創 作實施之範圍。即凡依本創作.申請專利範圍所做的均等 變化與修飾，皆為本創作專利範圍所涵蓋。 【圖式簡單說明】 第一圖，係本創作之發光二極體的俯視示意圖。 第二圖，係本創作之發光二極體的背面示意圖。 第三圖，係在第一圖的3-3位置斷面剖視示意圖。 第四圖，係在第一圖的4-4位置斷面剖視示意圖。 第五圖，係本創作之發光二極體的電路層示意圖。 第六圖，係本創作之發光二極體的反射層示意圖。 第七圖，係本創作之發光二極體固晶及打金線俯視視示 意圖8 第9頁/共18頁 M382588 [0035] 第八圖，係本創作之使用狀態示意圖。 【主要元件符號說明】 [0036] 底座11 [0037] 正面1 1 1 [0038] 背面11 2 [0039] 圍牆12 [0040] 凹穴1 3 [0041] 第一貫穿孔14、14’ [0042] 第二貫穿孔15、15’ [0043] 散熱塊2 [0044] 第一端面21 [0045] 第二端面22 [0046] 電路層3 _ [0047] 第一導電線路31 [0048] 第一焊接部311 [0049] 第二焊接部312 [0050] 第二導電線路32 [0051] 第三焊接部321 [0052] 打線組4 [0053] 鎳層41 表單編號A0101 第10頁/共18頁 M382588 [0054] 金屬層42 [0055] 第一打線區40 [0056] 第二打線區4 0 a [0057] 第三打線區40b [0058] 反射層5 [0059] 第一表面51 [0060] 第二表面52 [0061] 鎳層53 [0062] 金屬層54 [0063] 保護層6 [0064] 電極組7 [0065] 銀層71 [0066] 鎳層72 [0067] 金屬層73 [0068] 發光晶片8 [0069] 金屬導線9 [0070] 透鏡10 [0071] 光線101 表單编號A0101 第11頁/共18M382588 V. New description: [New technical field] [0001] This creation relates to a light-emitting diode, especially a high-power light-emitting diode. [Prior Art] [0002] At present, in order to increase the brightness of the light-emitting diode itself, many high-power light-emitting diodes are manufactured. These high-power light-emitting diodes can produce a very high-intensity light source, and only a few light-emitting diodes are needed in operation to achieve the brightness required for illumination and display. Although high-power light-emitting diodes can produce extremely high-intensity light sources, they also cause extremely high heat sources. [0003] Since the high heat source generated by the high-power light-emitting diode will affect the service life of the high-power light-emitting diode, a heat-dissipating block is incorporated inside the base when the high-power light-emitting diode is fabricated. After the heat dissipating block is fixed to the illuminating chip, the heat source generated by the illuminating chip is directly transmitted to the heat dissipating block, and the heat source dissipates the heat source. Such a high-power light-emitting diode has a good reflectivity and is coated with a layer of silver material on the surface of the cavity, but the silver material is blackened due to the moisture of the environment and the use time. Therefore, a protective layer (made of glass) is further coated on the surface of the silver material. Since the light-emitting chip is crystallized on the protective layer, the heat source generated by the light-emitting chip cannot be effectively transmitted to the heat-dissipating block, which directly affects the heat dissipation problem of the high-power light-emitting diode. [New content] Form No. A0101 Page 4 / A total of 18 pages M3-82588 [0004] Therefore, the main purpose of this creation is to solve the above problems, the present proposal proposes a solution technology, the heat block is directly placed under the wire-punching area to enhance the heat dissipation effect. [0005] In order to achieve the above object, the present invention provides an improved load-bearing structure of a light-emitting diode, comprising: [0006] a carrier having a base thereon, the base having a front surface and a back surface, the front surface of the base a wall is formed on the upper wall, and a recess is formed in the wall; and a first through hole is formed on each side of the base, and each of the two first through holes has a second through hole; [0007] The heat dissipating block is disposed in the two first through holes, and has a first end surface and a second end surface thereon; [0008] a circuit layer is disposed inside the base and is opposite to the two heat dissipating blocks The first end surface is pasted, the circuit layer has a first conductive line and a second conductive line, the first conductive line has a first soldering portion and a second soldering portion, and the second conductive line has a third portion a soldering portion, the first soldering portion is exposed by the second through hole, and the second and third soldering portions are exposed by the other second through hole; [0009] - the wire bonding group is composed of materials such as nickel, silver, gold, and the like a nickel layer electrically connected to the exposed portion of the second through hole a soldering portion is further disposed on the surface of the nickel layer with a metal layer to complete the first bonding region, and the surface of the exposed second and third soldering portions of the other second through hole is electrically connected to a nickel layer, and then a metal layer is disposed on the surface of the nickel layer to complete the second bonding region and the third bonding region; [0010] a reflective layer disposed on one side of the second through hole on the base to surround another form number A0101 Page 5 of 18 M382588 [0011] [0014] [0015] [1115] [0016] Form No. A0101 On the surface around the second through hole, the reflective layer has a a surface and a second surface, the first surface may reflect a light source generated by the light emitting chip; further, a nickel layer is electrically connected to the second surface, and a metal layer is disposed on the surface of the nickel layer; The electrode assembly is disposed on the second end surface of the two heat dissipation blocks and the back surface of the base, and the electrode group is composed of a silver layer, a nickel layer and a metal layer; The second heat dissipating block is disposed below the wire bonding area to increase the heat conduction rate and reduce the light emitting diode The internal temperature during operation increases the service life of the LED. [Embodiment] ΐΙι.Ρ The technical content and detailed description of this creation are as follows: See the first, second, second and fourth figures, which are the top and back of the LED. A cross-sectional view taken at the 3-3 position of the first figure and a cross-sectional view taken at the 4-4 position of the first figure. As shown in the figure, the improved load-bearing structure of the light-emitting diode of the present invention includes: a carrier 1, two heat-dissipating blocks 2, a circuit layer 3, a wire group 4, a reflective layer 5, a protective layer 6, and an electrode. The carrier 1 has a base 11 having a front surface m and a rear surface 112. A gamble 12 is protruded around the front surface 111 of the base 11, and a recess is formed in the sin wall 12 13. Further, each of the two through holes 14 and 14'' has a first through hole 14, 14'' on each side of the base 11 and a second through hole 15, 15'. The two first through pages 6 / 18 pages [0017] The internal system of the M382588 holes 14, 14 is greater than or equal to the inner diameter of the two second through holes i5, 15. In the present figure, the carrier i is made of ceramic. The two heat dissipating blocks 2 are disposed in the two first through holes 14 and 14 and have a first surface 21 and a second end surface 22, and the second end surface 22 is exposed on the back surface 112 of the base 11. . In the figure, the heat sink block 2 is composed of -Ag Slug. [0018] The circuit layer 3 is disposed inside the base π and is in contact with the first end surface 21 of the two heat dissipation blocks 2, and the circuit layer 3 has a first conductive line 31 and a second conductive line 32. (See the fifth figure), the first conductive line 31 has a first soldering portion 311 and a second soldering portion 312, and the second conductive line 32 has a third soldering portion 3", the first soldering portion The portion 311 is exposed by the second through hole 15, and the first and third welded portions 312 and 321 are exposed by the other second through hole 15 in the present embodiment, and the circuit layer 3 is made of silver. The wire bonding group 4 is made of a material such as nickel, silver or gold, and the nickel layer 41 is electrically connected to the first soldering portion 311 exposed by the second through hole 15, and the metal layer 42 is provided on the nickel. On the surface of the layer 41, the first bonding region 4 is completed. At the same time, the surface of the exposed second and third soldering portions 312'321 is electrically connected to a nickel layer 41, and then metal. The layer 42 is disposed on the surface of the nickel layer 41 to complete the second bonding region 4〇a and the third bonding region 4〇b. In the figure, the metal layer 42 is silver or gold. The reflective layer 5 is made of silver and is disposed on the second through hole 15 of the base 11 from one side to a surface surrounding the other second through hole 15 (refer to the sixth figure). As shown, the reflective layer 5 has a first surface form number A0101, a seventh page, a total of 18 pages, a M382588 51, and a second surface 52, the first surface 51 being larger than the second surface 52. A surface 51 can reflect a light source generated by a light-emitting chip (not shown). Further, a second layer 52 of the reflective layer 5 is electrically connected to a town layer 53 and then a metal layer 54 is disposed on the surface of the nickel layer 53. In the present embodiment, the metal layer 54 is either silver or gold. [0021] The protective layer 6 is made of any material of transparent ceramic or glass. The transparent ceramic material is a chemical raw material using artificial synthesis. , such as alumina, magnesia, calcium oxide, cerium oxide, zirconium oxide, magnesium fluoride, calcium fluoride, barium fluoride, zinc sulfide, selenium, cadmium telluride, etc. The protective layer 6 is disposed on the reflective layer. The first surface 51 of 5. The main electrode group 7 is provided on the second end face 22 of the heat sink block 2. On the back surface 111 of the base 11, the electrode group 7 is disposed on the second end surface 22 and the back surface 111 of the base 11 by a silver layer 71, and a nickel layer 72 is disposed on the surface of the silver layer 71. A metal layer 73 of a silver layer or a gold layer is provided on the surface of the layer 72. [0023] Please refer to the seventh figure, which is a top view of the solid crystal and gold wire of the present invention. As shown in the figure: After the carrier 1 of the light-emitting diode is completed, at least one or more light-emitting chips 8 can be adhered to the protective layer 6 of the recess 13 of the light-emitting diode, and the two metal wires 9 are electrically connected to the light-emitting chip 8. The two metal wires 9 are electrically connected to the first wire bonding zone 40 and the third wire bonding zone 40b. [0024] After the solid crystal and the gold wire are wound, an epoxy resin or a silicone material is injected into the cavity 13 to form the lens 10 of the light emitting diode package structure to provide light focusing. Form No. A0101 Page 8 / Total 18 pages M382588 [0025] [0028] [0030] [0033] [0034] Form number Α 0101 Please refer to the eighth figure, A schematic diagram of the state of use of this creation. As shown in the figure, when the light-emitting chip 8 is illuminated, the light 101 generated by the light-emitting chip 8 is irradiated onto the reflective layer 5 to enhance the reflectance, so that the reflection of the light 101 is concentrated and projected from the center of the lens 8. Increase the brightness of the light. At the same time, the protective layer 6 can prevent the reflective gold layer 5 from being affected by the ice gas or the use time, and the reflective layer 5 is deteriorated or discolored, resulting in a decrease in the light reflectance and a decrease in the brightness of the light. Further, an antistatic element (wafer) is electrically connected to the second bonding region 40a of the LED to prevent the LED from being electrostatically interfered under normal use. '^:J \ '; A r '" ' .3⁄4. +; : The above is only a preferred implementation of this creation: it is not intended to limit the scope of this creation. That is, the equal changes and modifications made by the applicants in accordance with the scope of the patent application are covered by the scope of the creation of the patent. [Simple description of the diagram] The first picture is a bird's-eye view of the light-emitting diode of the present invention. The second picture is a schematic view of the back side of the light-emitting diode of the present invention. The third figure is a schematic cross-sectional view taken at the 3-3 position of the first figure. The fourth figure is a schematic cross-sectional view taken at the 4-4 position of the first figure. The fifth picture is a schematic diagram of the circuit layer of the light-emitting diode of the present invention. The sixth figure is a schematic diagram of the reflective layer of the light-emitting diode of the present invention. The seventh picture shows the light-emitting diode of the present invention and the gold wire top view. Intention 8 Page 9 of 18 M382588 [0035] The eighth picture is a schematic diagram of the state of use of this creation. [Main component symbol description] [0036] Base 11 [0037] Front side 1 1 1 [0038] Back side 11 2 [0039] Fence 12 [0040] Pocket 1 3 [0041] First through hole 14, 14' [0042] Second through hole 15, 15' [0043] heat sink block 2 [0044] first end face 21 [0045] second end face 22 [0046] circuit layer 3 _ [0047] first conductive line 31 [0048] first solder portion Second welding portion 312 [0050] Second conductive line 32 [0051] Third soldering portion 321 [0052] Wire bonding group 4 [0053] Nickel layer 41 Form number A0101 Page 10 of 18 M382588 [0054 Metal Layer 42 [0055] First Junction Zone 40 [0056] Second Junction Zone 4 0 a [0057] Third Junction Zone 40b [0058] Reflective Layer 5 [0059] First Surface 51 [0060] Second Surface 52 Nickel Layer 53 [0062] Metal Layer 54 [0063] Protective Layer 6 [0064] Electrode Group 7 [0065] Silver Layer 71 [0066] Nickel Layer 72 [0067] Metal Layer 73 [0068] Light Emitting Wafer 8 [0069] Metal Wire 9 [0070] Lens 10 [0071] Light 101 Form No. A0101 Page 11 of 18