M375081 五、新型說明： 【新型所屬之技術領域】 本新型是有關於一種真空濺鍍裝置，特別是指一種連 續式真空濺鍍裝置。 【先前技術】 眾所皆知地，真空濺鍍技術是已廣泛應用在眾多產業 領域中，舉凡半導體製造業、光電業、電子業…，而為了 提高鑛膜產品的競爭力，降低設備與操作成本、縮短週期 時間（cycle time )、提高產能效率、提昇鍍膜品質與產品 良率…等，乃業界所追求的目標方向。因此，連續式 (in-line)多腔體（multi-chambers)真空濺鍍設備，在具 備設備成本低、設置空間需求較小、週期時間短，與產能 大等優勢下’遂已漸漸取代傳統批次式（batch type )或晶 圓式（wafer type )真空濺鍍設備。 簡單來說，連續式真空濺鍍設備通常包含一入料腔體 (中低真空度）、一鑛膜腔體（高真空度）與一出料腔體 (中低真空度），待加工基板是一片接一片地連續輸入或 輪出上述腔體。其中，由於入料腔體（l〇adl〇ck)必需反 覆地抦真空（pumpdown)與破真空（venting)，而鑛膜腔 體是維持在高真空度狀態下而不需破真空，故業界普遍認 為’入料腔體的抽真空與破真空效率會對整個濺鍍製程的 週期時間、產能、污染控制與產品良率等層面產生直接、 顯著的影響。 而為了達到縮短入料腔體的充/抽氣時間與提高其運 3 轉速度的目的，常見是從腔體體積與真空抽氣系統來進行 最佳化設計，如傳統的方式是以原本的入料腔體搭配較大 型的抽氣幫浦，目前亦有利用縮小入料腔體體積與縮短抽 氣幫浦之前置管線長度等作法。本案申請人則是利用改變 入料腔體之抽氣模式的手段，使入料腔體之抽/排氣效率與 運轉速度提高，基板能迅速輸入/出入料腔體，以達縮短週 期時間與提昇產能效果。 【新型内容】 因此本新型之目$，即在提供一種能優化入料腔體 的抽/排氣效率與運作速度，以縮短週期時間並提增產 連續式真空濺鍍裝置。 4 於疋’本新型之連續式真空濺鍍裝置，包含一入料單 元，以及-入料抽氣單元。該入料單元具有一能進行抽真 空與破真空的第一腔體’以及一連接該第一腔體且只進行 抽真空的第二腔體。該入料抽氣單元是連接該第一'二腔 體，且能對該第一、二腔體進行抽真空。 本新型之功效在於，利用該第二腔體是持續維 於環境氣叙特定真空狀態下⑽需破真空的設計，能優 =第一腔體的抽/排氣效率’因而提高該入料單元的運作 速度，使整體產生週期時間縮短與產能提 【實施方式】 特點與功效，在 細說明中，將可 有關本新型之前述及其他技術内容、 以下配合參考圖式之二個較佳實施例的詳 清楚的呈現。 M375081 在本新型被詳細描述之前’要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 如圖1所示’本新型之連續式真空濺鍍裝置2的一第 一較佳實施例，包含一入料單元21、一併接該入料單元 21的濺鍍單元22、一併接該濺鍍單元22的出料單元23、 一連接該入料單元21的入料抽氣單元24、一連接該濺鍍 單7G 22的濺鍍抽氣單元25、一連接該出料單元23的出料 抽氣單兀26,以及一用以阻隔該入料單元21、該濺鍍單 元22與該出料單元23的氣隔單元27。其中，該入料單元 21、該濺鍍單^ 22與該出料單元23是依序排成—直列狀。 該入料單元具有一第一腔體2U、一串聯該第一腔 體211的第二腔體213，以及一設置在該第_、二腔體叫、 213之間的活動閥門212;其中，該第—腔體2ιι必二反覆 地進行抽真空與破真空（爾ting)，該第二腔體213則要 維持在低於一大氣壓的特定真空度狀態，而不需破真空。 叙料抽氣單元24具有-連接該第—腔體2ιι的第一 粗抽幫浦241、一連接兮第-牌牌 242 # 13的第二粗抽幫浦 242、一用以控制該第一腔體21丨盥 是否連通的第-氣間243,以及—用粗抽幫浦241 也 用以控制該第二腔體2 n ^亥第二粗抽幫浦242是否連通的第 “幫= Μ，皆是機械幫浦，如 片幫浦。該第—粗抽幫浦 力從一環境氣壓值降至一預抽弟 而該第二粗抽幫浦242能使該第二腔體 : 5 M375081 持在小於該預抽真空壓力值的一送出真空壓力值；本實施 例中，該環境氣壓值為一大氣壓=1 atm=76〇 t〇rr，=預 抽真空壓力值為ίο·1 torr’而該送出真空壓力值為1〇_2 t〇rr。 該濺鍍單元22具有四依序排成一直列狀的工作腔體 221〜224,於該四工作腔體221〜224中是分別進行基板^ 加熱、鍍膜、鍍膜與膜加熱改質處理等作業，有關相關作 業之機件運I細節乃該技術㈣中具㈣常知識者所熟 知’且非關本新型之技術特徵’不再贅述；本實施例中， 工作腔體221〜224的數量是四個，當然也能是一個或應需 求以增減。 " 25具有四分別連接該四工作腔體 251，以及四分別連接該四工作腔體 該濺鍍抽氣單元 221〜224的粗抽幫浦 工作腔體221的粗 者是依序啟動以對 單地說’首先是該 221〜224的細抽幫浦252 ;以連接同一 抽幫浦25 1與細抽幫浦252來說明’二 該工作腔體221進行二段式抽真空，簡 粗抽幫了 251對該工作腔體22"由氣至呈中低真空度狀態 (> 10 torr )，接著，該細抽幫浦252再繼續對該工作腔 體221抽氣至呈高真空度狀態（< 1G·3 ton·)，此後，該工 作腔體221便持續維持在高真空度狀態而不需破真空，有 關一段式抽真空的其他操作細節，同樣是該技術領域中具 有通常知識者所熟知，且非關本新型之技術特徵，不再詳 述本實施例中，粗抽幫浦25 i亦是機械幫浦，而細抽幫 浦252為渦輪幫浦、擴散幫浦…等高真空幫浦者。 該出料單元 23具有一出料腔體231，於此能進行吹 6 淨、冷卻等作業。該出 虱早兀26具有一逵垃4 , 腔體23!的粗抽幫浦261 冑連接該出料 地被抽真空與破真空 2 '腔體231同樣必需反覆 231 „ 粗抽幫浦26丨能使該出料腔驴 231的内部氣壓從常壓降 田科腔體 t〇r . 士# 降呈中低真空度狀態（約1〇·2 t〇rr ) 〇本實施例中，該粗 0 ^ 幫浦261同樣是機械幫浦。 口豕軋隔早兀27且右— ^ 211 . α| 、 用U阻隔外界環境與該第一腔 體211的入料閥門271、一 乐腔 工作腔體22i的力^ 用以阻隔該第二腔體213與該 r體22 °閥門272、三用以分隔該四工作 =21，的氣密閥門273、—用以阻隔 : 與該出料腔體如的加工出口問門274，以及體以 該出料腔體23 1與外界琿产& 以阻隔 卜界衣'兄的出料閥門275。利用,玄知丁 入口間門瓜該三氣密閥門273與該加工出=加工 能避免該第二腔體213、該工、 74， 腔體231相互污毕，以唯持個作腔體221〜224與該出料 #以維持個別之真空度與潔淨度要求。 一於操作該連續式真空錢鍍裳置2時，基板上是-片接 片地連續輸送經該入料單 祖黾-„ 什早兀21、该濺鍍單元22與該出 枓…3,即該入料單元21、該濺鍍單元22與該出料單 二23疋同時在運作的。在送入第-片基板1之前，控制 該氣隔單元”之入料間門271、加工入口閥門Μ、氣密】 ]門273加工出口閥門274與出料間門等皆為封閉， 並啟動該入料抽氣單元24之第二粗抽幫浦242(該第二氣 閥244為開啟）與該滅鍍抽氣單元25，以分別使該第二腔 體213維持在中低真空度狀態（約1〇、。ΓΓ)、該減鍍單元 U之四工作腔體221〜224維持在高真空度狀態（約1〇6 M375081 進行破真 t〇rr)，另外對該第一腔體211與該出料腔體23ι 空。 妾者’將基板1裝載在承載盤3上，並開啟該入料閥 27〗’以使基板i連同承载盤3 一併送入該第一腔體 中，隨後關閉該入料閥門271，並啟動該入料抽氣單元Μ 之第一粗抽幫浦241 (該第一氣閥243為開啟），待該第— 腔體2U達該預抽真空壓力（約…㈣時，該^動間‘ 門212便會開啟以使基板丨移送至該第二腔體2i3中；隨 後該活動閥門212再關閉，該第一粗抽幫浦241與該第二' 氣閥243皆關閉，該第一腔體211便進行破真空，以準備 讓下一片基板1移入。直到確認該第二腔體213已達該送 出真空壓力（、約10 2 torr )後，該加工入口閱門272會開 啟以使基板1移進入該工作腔體221中。 基板1於移送入該工作腔體221中後，配合控制氣密 閥門273之適時啟閉，基板丨便能依序移經該四工作腔體 221〜224以進行加溫、鍍膜、鍍膜與臈加熱改質處理等加 工’完成上述加工作業後’該加工出口閥門274會開啟， 以讓鍍膜成品從該工作腔體224移出並移送入該出料腔體 231中，以進行後續之吹淨、冷卻等作業，最後開啟該出 料閥門275 ’將鍍膜成品與承載盤3 一併移出，再將鑛膜 成品取下即可。 因此’利用該第一腔體211與第二腔體213的設計， 降低該第一腔體211的真空度要求，使該第一腔體211能 快速地抽真空（從latm抽至ιο-^οη·)與破真空，配合該 8 第二腔體213不需破真空而持續維持在能將基板i移至該 濺鍍單元22中的送出真空壓力狀態下，使得基板丨能快 速地進、出該入料單元21，有效優化該入料單元21的抽/ 排氣效率與運作速度，進而讓該連續式真空濺鍍裝置2整 體能產生週期時間縮短與產能提昇等功效。 如圖2所示，為本新型之連續式真空濺鍍裝置2的一 第一較佳實施例，於上述該第一較佳實施例不同處在於， 該入料單元2丨之該第一、二腔體211、213為並聯，即基 板1自該第一腔體211移出後便直接移送入該濺鍍單元22 之工作腔體221中。再者，該入料抽氣單元24是包含一 連接該第一、二腔體211、213的粗抽幫浦245、一用以控 制該第一、二腔體211、213是否連通的第一氣閥246、一 用以控制該粗抽幫浦245與該第一腔體211是否連通的第 二氣閥247 ’以及一用以控制該第一、二腔體211、213是 否連通的第三氣閥248。另外，該加工入口閥門272是設 置在該第一腔體2Π與該工作腔體221之間，同樣地，在 該粗括幫浦245對該第-腔體211抽真空達該送出真空壓 力值（約1 〇 torr)時，該加工入口間門便打開。 在汶入料單元21與該入料抽氣單元24的運作過程 中。亥粗抽幫浦245是持續對該第二腔體213進行抽真 二即該第二氣閥248是常開狀態，使該第二腔體2丨3 一 直維持在低於該環境氣壓的特定真空度狀態下而不需破 真空’再配合控制該第-、1氣閥246、247的適時啟閉， 例如：在該第-腔體211進行抽真空時，該第一、二氣閥 M375081 246、247需開啟，而於該第一腔體211進行破真空時，則 關閉該第一、二氣閥246、247，如此一來，便能有效提高 該第一腔體211之抽真空與破真空效率，讓基板1能迅速 輸進/出該第一腔體211以繼續移進入該濺鍍單元22中， 故同樣能使整體達到縮短週期時間與提昇產能等功效。 綜上所述’本新型之連續式真空濺鍍裝置2,能夠有· 效優化該入料單元211的抽/排氣效率與運作速度，進而讓· 整體產生週期時間縮短與產能提昇等功效，故確實能達成 本新型之目的。 惟以上所述者，僅為本新型之較佳實施例而已，當不 能以此限定本新型實施之範圍，即大凡依本新型申請專利 範圍及新型說明内容所作之簡單的等效變化與修飾，皆仍 屬本新型專利涵蓋之範圍内， 【圖式簡單說明】 圖1疋一示意圖，說明本新型之連續式真空濺鍍裝置 的一第一較佳實施例；以及 圖2疋一示意圖，说明本新型之連續式真空濺鍍裝置 的一第二較佳實施例。 10 M375081 【主要元件符號說明】 1 基板 25 濺鍍抽氣單元 3 承載盤 251 粗抽幫浦 2 連續式真空濺鍍裝置 252 細抽幫浦 21 入料單元 26 出料抽氣單元 211 第一腔體 261 粗抽幫浦 212 活動閥門 27 氣隔單元 213 第二腔體 271 入料閥門 22 濺鍍單元 272 加工入口閥門 221-224工作腔體 273 氣密閥門 23 出料單元 274 加工出口閥門 231 出料腔體 275 出料閥門 24 入料抽氣單元 241 第一粗抽幫浦 242 第二粗抽幫浦 243 第一氣閥 244 第二氣閥 245 粗抽幫浦 246 第一氣閥 247 第二氣閥 248 第三氣閥 11M375081 V. New description: [New technical field] The present invention relates to a vacuum sputtering device, and more particularly to a continuous vacuum sputtering device. [Prior Art] It is well known that vacuum sputtering technology has been widely used in many industrial fields, such as semiconductor manufacturing, optoelectronics, electronics, etc., in order to improve the competitiveness of mineral film products, reduce equipment and operation. Cost, shorten cycle time, increase productivity, improve coating quality and product yield, etc. are the goals that the industry is pursuing. Therefore, in-line multi-chambers vacuum sputtering equipment has gradually replaced the traditional ones with the advantages of low equipment cost, small installation space requirement, short cycle time and large capacity. Batch type or wafer type vacuum sputtering equipment. Briefly, continuous vacuum sputtering equipment usually consists of a feed chamber (medium and low vacuum), a membrane chamber (high vacuum) and an discharge chamber (medium and low vacuum), the substrate to be processed. The chambers are continuously input or rotated one by one. Among them, since the feed cavity (l〇adl〇ck) must repeatedly pump down and venting, and the mineral film cavity is maintained under a high vacuum state without breaking the vacuum, the industry It is generally believed that the vacuuming and vacuuming efficiency of the inlet cavity will have a direct and significant impact on the cycle time, capacity, pollution control and product yield of the entire sputtering process. In order to shorten the charging/extracting time of the inlet chamber and improve the speed of the 3rd rotation, it is common to optimize the design from the volume of the chamber and the vacuum pumping system, as the traditional method is based on the original The feeding chamber is matched with a larger pumping pump, and there are also methods for reducing the volume of the inlet chamber and shortening the length of the pipeline before the pumping pump. In this case, the applicant uses the means of changing the pumping mode of the inlet chamber to improve the pumping/exhausting efficiency and running speed of the inlet chamber, and the substrate can be quickly input/output into the material chamber to shorten the cycle time and Improve productivity. [New content] Therefore, the purpose of the present invention is to provide a continuous vacuum sputtering apparatus which can optimize the pumping/exhausting efficiency and operating speed of the inlet chamber to shorten the cycle time and increase the production. 4 于疋' The new continuous vacuum sputtering apparatus comprises a feed unit and a feed pumping unit. The feed unit has a first chamber that is capable of vacuuming and vacuuming, and a second chamber that connects the first chamber and only evacuates. The feed pumping unit is connected to the first 'two-cavity body, and can evacuate the first and second chambers. The effect of the novel is that the second cavity is continuously designed to maintain the vacuum in the specific vacuum state (10), and can optimize the pumping/exhaust efficiency of the first cavity. The speed of operation, the overall production cycle time is shortened, and the capacity is improved. [Embodiment] Features and functions. In the detailed description, the foregoing and other technical contents of the present invention, and the following two preferred embodiments of the reference drawings will be described. Detailed and clear presentation. M375081 Before the present invention is described in detail, it is to be noted that in the following description, similar elements are denoted by the same reference numerals. As shown in FIG. 1 , a first preferred embodiment of the continuous vacuum sputtering apparatus 2 of the present invention comprises a feeding unit 21 and a sputtering unit 22 connected to the feeding unit 21 in parallel. a discharge unit 23 of the sputtering unit 22, a feed pumping unit 24 connected to the feed unit 21, a sputtering pumping unit 25 connected to the sputtering unit 7G 22, and an outlet connecting the discharge unit 23 A pumping unit 26 and a gas compartment unit 27 for blocking the feeding unit 21, the sputtering unit 22 and the discharging unit 23. The feeding unit 21, the sputtering unit 22 and the discharging unit 23 are sequentially arranged in an in-line shape. The feeding unit has a first cavity 2U, a second cavity 213 connected in series with the first cavity 211, and a movable valve 212 disposed between the first and second cavity bodies 213; The first cavity 2 ι must be repeatedly vacuumed and vacuumed, and the second cavity 213 is maintained at a specific vacuum state below atmospheric pressure without breaking the vacuum. The sample pumping unit 24 has a first rough pumping 241 connected to the first cavity 2 ιι, a second rough pumping 242 connected to the first card 242 #13, and one for controlling the first Whether the cavity 21 连通 is connected to the first air chamber 243, and the rough pump 241 is also used to control whether the second cavity 2 n ^ the second rough pump 242 is connected to the "help = Μ They are all mechanical pumps, such as a sheet pump. The first-rough pumping force is reduced from an ambient pressure value to a pre-sampling and the second rough pumping 242 is capable of the second chamber: 5 M375081 Holding a vacuum pressure value less than the pre-vacuum pressure value; in this embodiment, the ambient air pressure value is one atmosphere = 1 atm = 76 〇 t rr, = the pre-vacuum pressure value is ί ο 1 torr ' The delivery vacuum pressure value is 1〇_2 t〇rr. The sputtering unit 22 has four working chambers 221 to 224 arranged in a row in a row, and is respectively performed in the four working chambers 221 to 224. Substrate ^ heating, coating, coating and film heating and upgrading operations, etc., the details of the relevant parts of the machine operation I (4) in the technology (four) common knowledge is known to ' The technical features of the non-closed type will not be described again; in this embodiment, the number of the working chambers 221 to 224 is four, and of course, one or the demand may be increased or decreased. " 25 has four connected to the four The working cavity 251, and the roughing of the rough pumping working chambers 221 respectively connecting the four working chambers of the sputtering and pumping units 221 to 224 are sequentially activated to say "the first is the 221~ 224 of the fine pumping 252; to connect the same pumping pump 25 1 with the fine pumping pump 252 to illustrate 'two of the working chamber 221 for two-stage vacuuming, simple rough pumping 251 for the working chamber 22" From the gas to the medium-low vacuum state (> 10 torr), the fine pumping 252 then continues to pump the working chamber 221 to a high vacuum state (<1G·3 ton·) Thereafter, the working chamber 221 is continuously maintained in a high vacuum state without breaking the vacuum, and other operational details regarding the one-stage vacuuming are also well known to those of ordinary skill in the art, and are not related to the new type. The technical features are not detailed in this embodiment, and the rough pump 25 i is also The mechanical pump, and the fine pumping pump 252 is a turbo pump, a diffusion pump, etc. The vacuum unit is provided with a discharge chamber 231, which can perform the operations of blowing 6 and cooling. The exit 虱 26 has a 逵 4 4, the cavity 23 的 of the rough pump 261 胄 connected to the discharge is vacuumed and the vacuum 2 'cavity 231 must also be repeated 231 „ rough pump 26丨 The internal gas pressure of the discharge chamber 231 can be lowered from the atmospheric pressure drop field cavity t〇r. 士# to a medium-low vacuum state (about 1 〇·2 t〇rr). In this embodiment, Thick 0 ^ The pump 261 is also a mechanical pump.豕 豕 隔 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The cavity 213 and the r body 22 ° valve 272, three for separating the four working = 21, the airtight valve 273, for blocking: the processing outlet door 274 with the discharge cavity, and the body The discharge chamber 23 1 is externally produced & to block the discharge valve 275 of the brother's brother. The use of the first and second airtight valves 273 and the processing of the process can prevent the second cavity 213, the work, 74, and the cavity 231 from being mutually contaminated, so as to hold only a cavity 221 ~224 with the discharge # to maintain individual vacuum and cleanliness requirements. When the continuous vacuum plating device is operated, the substrate is continuously conveyed by the sheet piece through the input sheet 黾 „ 什 兀 21, the sputtering unit 22 and the 枓 ... 3, That is, the feeding unit 21, the sputtering unit 22 and the discharge sheet 23 are simultaneously operated. Before the feeding of the first substrate 1, the inlet door 271 and the processing inlet of the air separation unit are controlled. The valve Μ, airtight] door 273 processing outlet valve 274 and the discharge door are closed, and the second rough pump 242 of the feed pumping unit 24 is activated (the second valve 244 is open) And the deplating and pumping unit 25 maintains the second cavity 213 in a medium-low vacuum state (about 1 〇, ΓΓ), and the four working chambers 221 224 224 of the deplating unit U are maintained at a high level. The vacuum state (about 1 〇 6 M375081 is broken), and the first cavity 211 and the discharge cavity 23 are empty. The latter 'loads the substrate 1 on the carrier tray 3 and opens the inlet valve 27' to cause the substrate i to be fed into the first cavity together with the carrier tray 3, and then closes the inlet valve 271, and Starting the first rough pumping 241 of the feed pumping unit ( (the first gas valve 243 is open), when the first cavity 2U reaches the pre-vacuum pressure (about... (four), the moving room The door 212 is opened to transfer the substrate raft into the second cavity 2i3; then the movable valve 212 is closed again, the first rough pump 241 and the second 'valve 243 are both closed, the first The cavity 211 is vacuumed to prepare for the next substrate 1 to be moved in. Until it is confirmed that the second cavity 213 has reached the vacuum pressure (about 10 2 torr), the processing inlet door 272 is opened to enable The substrate 1 is moved into the working cavity 221. After the substrate 1 is transferred into the working cavity 221, the substrate 丨 can be sequentially moved through the four working chambers 221 by controlling the opening and closing of the airtight valve 273. 224 for processing such as heating, coating, coating, and enamel heating and modification, 'after finishing the above processing operation' The outlet valve 274 is opened to allow the coated product to be removed from the working chamber 224 and transferred into the discharge chamber 231 for subsequent blowing, cooling, etc., and finally the discharge valve 275' will be finished. It is removed together with the carrier tray 3, and then the finished mineral film is removed. Therefore, by using the design of the first cavity 211 and the second cavity 213, the vacuum requirement of the first cavity 211 is lowered, so that the The first cavity 211 can quickly evacuate (from lapm to ιο-^οη·) and vacuum, and the second cavity 213 can be continuously maintained to be able to move the substrate i to the sputtering without breaking the vacuum. In the state of sending the vacuum pressure in the unit 22, the substrate 丨 can quickly enter and exit the feeding unit 21, effectively optimizing the pumping/exhausting efficiency and the operating speed of the feeding unit 21, thereby allowing the continuous vacuum sputtering. The device 2 as a whole can produce cycle time shortening and capacity increase, etc. As shown in Fig. 2, a first preferred embodiment of the novel continuous vacuum sputtering device 2 is different from the above first preferred embodiment. Wherein, the feeding unit 2 is the first one, The two cavities 211 and 213 are connected in parallel, that is, the substrate 1 is directly transferred into the working cavity 221 of the sputtering unit 22 after being removed from the first cavity 211. Further, the infusion pumping unit 24 includes a a rough pump 245 connecting the first and second chambers 211 and 213, a first air valve 246 for controlling whether the first and second chambers 211 and 213 are connected, and a control unit for controlling the rough pump 245 is a second air valve 247' communicating with the first cavity 211 and a third air valve 248 for controlling whether the first and second chambers 211, 213 are in communication. In addition, the machining inlet valve 272 is set. Between the first cavity 2Π and the working cavity 221, similarly, when the coarse cavity 245 vacuums the first cavity 211 to the vacuum pressure value (about 1 〇torr), The door between the processing entrances opens. During the operation of the waste feed unit 21 and the feed pumping unit 24. The rough pump 245 is continuously pulsing the second cavity 213, that is, the second gas valve 248 is normally open, so that the second cavity 2丨3 is maintained at a temperature lower than the ambient pressure. In the vacuum state, without vacuuming, the first and second gas valves 246 and 247 are controlled to be opened and closed at a proper time. For example, when the first cavity 211 is evacuated, the first and second gas valves M375081 246, 247 need to be opened, and when the first cavity 211 is vacuumed, the first and second air valves 246, 247 are closed, so that the vacuuming of the first cavity 211 can be effectively improved. By breaking the vacuum efficiency, the substrate 1 can be quickly input/exited into the first cavity 211 to continue moving into the sputtering unit 22, so that the overall shortening cycle time and productivity can be achieved. In summary, the continuous vacuum sputtering apparatus 2 of the present invention can optimize the pumping/exhausting efficiency and the operating speed of the feeding unit 211, thereby further reducing cycle time and capacity increase. Therefore, the purpose of this new type can be achieved. However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention cannot be limited thereto, that is, the simple equivalent change and modification made by the novel patent application scope and the novel description content, The present invention is still within the scope of the present patent. [Fig. 1] is a schematic view showing a first preferred embodiment of the continuous vacuum sputtering apparatus of the present invention; and Fig. 2 is a schematic view showing A second preferred embodiment of the continuous vacuum sputtering apparatus of the present invention. 10 M375081 [Description of main components] 1 Substrate 25 Sputtering and pumping unit 3 Carrier plate 251 Rough pumping 2 Continuous vacuum sputtering device 252 Fine pumping 21 Feeding unit 26 Discharging unit 211 First chamber Body 261 rough pump 212 active valve 27 air compartment unit 213 second cavity 271 inlet valve 22 sputtering unit 272 processing inlet valve 221-224 working chamber 273 airtight valve 23 discharge unit 274 processing outlet valve 231 Feed chamber 275 discharge valve 24 feed pumping unit 241 first rough pump 242 second rough pump 243 first air valve 244 second air valve 245 rough pump 246 first air valve 247 second Air valve 248 third air valve 11