M352135 ' 八、新型說明： ； 【新型所屬之技術領域】 本創作係有關於一種發光二極體晶片封裝結構，尤指 一種具有内埋式靜電防護功能之發光二極體晶片封裝^ 構。 . 、° 【先前技術】 • 請參閱第一圖所示，其係為習知具有靜電防護 (Electro-Static Discharge，ESD)功能之發光二極體晶片 封裝結構之剖面示意圖。由圖中可知，習知之發光二極 晶片封裝結構係包括：一基底結構丄、至少一設置於該基 底結構1上端之發光二極體2、一靜電防護裝置 二 螢光膠體4。 山其中’該發光二極體2上端之正電極端2 1及負電極 端2 2係藉由兩條導^W1以電性連接於該基底結構工 • 之正電極端1 1及負電極端1 2。此外，該靜電防護裝置 3也同樣設置於該基底結，並且該靜電防護裝以 之負電極端3 2係直接電性連接於該基底結構1的正電 極區域，而該靜電防護裝置3之正電極端3 1係透過—導 線W2以電性連接於該基底結構1之負電極端i 2。再 ^亥㈣龍4顧蓋㈣發光二極體2及婦電防護 、3上鈿，以保護該發光二極體2及該靜電防護裝置 3 〇 然而，上述習知具有靜電防護功能之發光二極體晶片 6 M352135 封裝結構仍具有下列幾項缺點： 1、 因為該發光二極體2所處的位置過低，因此習知 的結構無法有效地提升該發光二極體2的發光 效能。 2、 由於該靜電防護裝置3設置於該發光二極體2 的鄰近區域，因此該發光二極體2的發光效能會 受到該靜電防護裝置3的影響。 3、 由於該靜電防護裝置3與該發光二極體2相鄰 地設置於該基底結構1之同一導電接腳上，因此 該發光二極體2的散熱效能會受到該靜電防護 裝置3的影響。 【新型内容】 本創作所要解決的技術問題，在於提供一種具有内埋 式靜電防護功能之發光二極體晶片封裝結構。本創作將一 發光單元與一靜電防護單元彼此分開（分層）設置，以避 免該發光單元受到該靜電防護單元之干擾。 此外，本創作之螢光材料沒有直接接觸到發光單元， 因此本創作可避免因發光單元所產生的高溫而降低螢光 材料的發光效率。 再者，本創作之結構設計更適用於各種光源，諸如背 光模組、裝飾燈條、照明用燈、或是掃描器光源等應用， 皆為本創作所應用之範圍與產品。 為了解決上述技術問題，根據本創作之其中一種方 7 M352135. 式靜電防護功能之發光二極體晶片 二第二封裝單元、一發光單元、及-第三: 其t’該導電單元係具有至少兩個導電接腳 二至少兩個導電接腳彼此相鄰排列以形“ ，。该P封裝單元係包覆每—個導電接腳之—部分，ς 產生一與該凹陷空間相連通之容置空間，並使 之末端露出該第—封裝單元。該靜電防護 置於遠凹陷”内並電性連接於上述兩個導 = 間第—封鮮元係容置於該㈣m ^覆蓋該靜電 於上述兩個導電接腳之間。該第三接 置空間内以覆蓋該發光單元。f裝早70係谷置於該容 不：：不同的需要，該第爾單元係可為下列 L第第一實實施 該第二封裝單元係為-透明材料。 2第一實施態樣H封裝單元係為—榮 料’並且該螢光材料係由矽膠與螢光粉混合而 或由環氧樹脂與螢光粉混合而成。 3、 第+二實施態樣：該第三封裝單元係具有一用於霜 盍該發光單元之透明材料及一成形在該 料上之螢光材料。 4、 第四實施態樣：該第三封裝單元係具有一用於 蓋該發光單元之螢光材料及一成形在該榮光材 M352135 料上之透明材料。 因此，本創作具有内埋式靜電防護功能之發光二極體 晶片封裝結構係具有下列之優點： 1、 因為該發光單元透過該第二封裝單元的撐高，以 使得該發光單元能處於一較高的位置。因此，本 創作的結構可以有效地提升該發光單元的發光 效能。 2、 由於該靜電防護單元與該發光單元彼此分開（分 層）設置於不同的位置，因此該發光單元的發光 效能不會受到該靜電防護單元的影響。 3、 由於該靜電防護單元與該發光單元彼此分開（分 層）設置於不同的位置，因此該發光單元的散熱 效能不會受到該靜電防護單元的影響。 4、 於上述第三實施態樣中，因為該第三封裝單元係 由該透明材料及該螢光材料兩層所組成，所以該 螢光材料沒有直接接觸到該發光單元，因此本創 作可避免因該發光單元所產生的高溫而降低該 螢光材料的發光效率。 5、 於上述第四實施態樣中，透過該透明材料的使 用，一方面可減少該螢光材料的使用量，另外一 面可藉由該透明材料位於最上層來保護該螢光 材料，以達到免受外力的破壞的優點。 為了能更進一步瞭解本創作為達成預定目的所採取 之技術、手段及功效，請參閱以下有關本創作之詳細說明 9 M352135 與附圖，相信柄作之目的、特徵與特點，當可由此得一 =入且具體之瞭解1而所附圖式僅提供參考與說明用， 並非用來對本創作加以限制者。 【實施方式】 請參閱第二A圖至第圖所示，本創作第一實施例 之發光二極體晶片封裝結構之製作方法係包括下列步驟： 明參閱第一A圖所示，提供一導電單元1 a，其具有 至少兩個導電接腳i 〇 a，並且該至少兩個導電接腳工〇 a彼此相鄰排列以形成一凹陷空間1 〇 〇 a。其中，每一 個導電接腳1 G a係具有—延伸部i Q i a及一由該延 ^申邛1 0 1 a向下彎折之彎折部1 〇 2 a，並且該等彎折 邛1 0 2 a係彼此相鄰排列以形成該凹陷空間1 〇 〇 a。 一請參閱第二A圖所示，將一第一封裝單元2 a包覆每 一個導電接腳1 〇 a之一部分，以產生一與該凹陷空間工 0 〇 a相連通之容置空間2 〇 ◦ a，並使得每一個導電接 腳1 〇 a之末端露出該第一封裝單元2 3。換言之，每一 個延伸部1 〇 1 a之一端係外露於該第一封裝單元2 a 的外部，並且該第一封裝單元2 a係為一不透光材料。 請參閱第二B圖所示’將一靜電防護單元3 a容置於 該凹陷空間1 〇 〇 a内並電性連接於上述兩個導電接腳 1 0 a之間。以本創作第一實施例而言，該靜電防護單元 3 a係電性地設置於其中一導電接腳1 〇 a上，並且該靜 電防護單元3 a係透過一導線W1 a而電性連接於另外 M352135' 一導電接腳1 〇 a。 該凹^^=_示’將-第二封裝單元^容置於 矽黛-Γ曰’10 0 a内以覆蓋該靜電防護單元3 a，其中 二二，早兀4 a係可為—具有光反射物質之封裝材 1主=該光反射物質係可為高反射材料或全反射材料。 置=二0圖所示，將-發光單元“容置於該容 a::2甘0 0 a内並電性連接於上述兩個導電接腳1 0 哕發：罝二t該發光早疋5 a係可為一發光二極體，並且 ;Ca係設置於該第二封褒單元“上，而且該 [、+、ΓΓ5 a#透過兩條導線W2 a时別電性連接於 ==導電接腳1Qa。再者，該發光單元5a可透過 =第-封褒單元4 a之高反射性質，以達到高反射的效 =此夕^透過該第二封裝單元4 a的撑高，以使得該發 早兀5 a能處於一較高的位置，因此本創作的結構可以 $地提升該發光單元的發光效能。另外，由於該靜電防 -単元3 a與該發光單元5 3彼此分開（分層）設置於不 =位置’因此該發光單元5 a的發光效能及散熱效能不 會受到該靜電防護單元3 a的影響。 上〜請參閱第二E圖所示，將一第三封裝單元6a容置於 ，^間2 0 〇 a内以覆蓋該發光單元5 a。以本創作 第貫施例而言，該第三封裝單元6 a係可為一透明材 料。 因此，如第二E圖所示，本創作第一實施例係提供一 種具有内埋式靜電防護功能之發光二極體晶片封裝結 11 M352135 構，其包括：一導電單元1 a、一第一封裝單元2 a、一 靜電防遵單元3 a、一第二封裝單元4 a、一發光單元5 a、及一第三封裝單元6 a。 、其中，该導電單元1 a係具有至少兩個導電接腳1 〇 a，並且該至少兩個導電接腳1 〇 a彼此相鄰排列以形成 -凹陷空間1〇〇 a。該第一封裝單元2 a係包覆每一個 導電接腳1 〇 3之一部分，以產生一與該凹陷空間1 〇 〇 a相連通之容置空間2 〇 〇 a，並使得每一個導電接腳丄 〇 a之末端露出該第一封裝單元2 a。該靜電防護單元3 1係容置於該凹陷空間工〇 〇 a内(容置於上述至少兩個 。電接腳1 〇 a之間）並電性連接於上述兩個導電接腳1 3之間。該第二封裝單元4 a係容置於該凹陷空間工〇 容置於上述至少兩個導電接腳工〇 a之間) ί 護單元3 a。該發光單元5 a係容置於該容置 Γρ: ^°^内並電性連接於上述兩個導電接腳1 〇 a 曰以第二封裝單元63係容置於該容置 内以覆蓋該發光單元5a。 f12〇0a 護功係為本創作具有内埋式靜電防 」：之發先一極體晶片封裝結構的第二實施 =1。由圖t可知，本創作第二實施 = 之一晶二= 單元3!電:二；；=裝單咖、—靜電防護 第：封获-U 4 發光單元5 b、及一 “早兀“。此外，本創作第二實施例與第—實施 12 M352135 例最大的差別在於··在笫-香& t ^-弟—貫施例中’該靜電防護單亓q ϊ=1:單元“上，因此該靜電防G 3b係透過兩條導線Wlb =邊早凡 接腳10b。再者，該發光單連接於兩個導電 b以電性賴置於其中—導^過—條導線W 2 單元5 b係透過另一停上，並且該發光 =腳1〇b。導線W2b以電性連接於另外- 請參m所示’其係為本創作具有内埋式靜電防 護功能之發光二極體晶片封裝結構的第三實施例::： 不意圖。由圖t可知:本創作第三實施例與第—實施^ 大的差別在於.在第二實施例中，一第三封震單元6 為-螢光材，，並且該螢料料係可㈣膠與㈣粉^ 而成或由環氧樹脂與螢光粉混合而成。 口 請參閱第五圖所示，其係為本創作具有内埋式靜電 護功能之發光二極體晶片封裝結構的第四實施例之剖面 示意圖。由圖中可知，本創作第四實施例與第一實施二 大的差別在於：在第四實施例中，一第三封裴單元6 d 具有一用於覆蓋一發光單元5 d之透明材料6 〇 d及二 成形在該透明材料6 0 d上之螢光材料6工d。因此，因 為該第二封裝單元6 d係由該透明材科6 q d及該螢光 材料6 1 d兩層所組成，所以該螢光材科6 } 有直接 接觸到該發光單元5 d，因此本創作町避免因該發光單元 5 d所產生的高溫而降低該螢光材料6 1 d的發光效率。 請參閱第六圖所示，其係為本創作具有内埋式靜電防 M352135 護f能之發光二極體晶片封裝結構的第五實施例之剖面 不思圖。由圖中可知，本創作第五實施例與第一實施例最 大的差別在於：在第五實施例中，一第三封裝單元6㊀係 具有-用於覆蓋-發光單元5 e之螢光材料6 i e及一 f形f該螢光材料6 1 e上之透明材料6。e。因此，於 第五實施例中，透過該透明材料6 0 e的使用，一方面可M352135 ' VIII, new description: ; [New technical field] This creation is about a light-emitting diode package structure, especially a light-emitting diode package with embedded electrostatic protection. [°] [Previous Technology] • Refer to the first figure, which is a schematic cross-sectional view of a conventional LED package structure with Electro-Static Discharge (ESD) function. As can be seen from the figure, the conventional light emitting diode package structure comprises: a base structure, at least one light emitting diode 2 disposed at the upper end of the base structure 1, and an electrostatic protection device 2 fluorescent colloid 4. The positive electrode terminal 2 1 and the negative electrode terminal 2 2 at the upper end of the light-emitting diode 2 are electrically connected to the positive electrode terminal 1 1 and the negative electrode terminal 1 2 of the base structure by two wires . In addition, the electrostatic protection device 3 is also disposed on the base node, and the negative electrode terminal 32 of the electrostatic protection device is directly electrically connected to the positive electrode region of the base structure 1, and the electrostatic protection device 3 is positively charged. The extreme 3 1 is electrically connected to the negative electrode terminal i 2 of the base structure 1 through a wire W2. Further, the second (4) dragon 4 cover (4) the light-emitting diode 2 and the electrician protection, and the 3 upper cover to protect the light-emitting diode 2 and the electrostatic protection device 3. However, the above-mentioned conventional light-emitting protection function The polar body wafer 6 M352135 package structure still has the following disadvantages: 1. Since the position of the light-emitting diode 2 is too low, the conventional structure cannot effectively improve the light-emitting efficiency of the light-emitting diode 2. 2. Since the electrostatic protection device 3 is disposed in the vicinity of the light-emitting diode 2, the light-emitting efficiency of the light-emitting diode 2 is affected by the electrostatic protection device 3. 3. Since the electrostatic protection device 3 is disposed on the same conductive pin of the base structure 1 adjacent to the LED 2, the heat dissipation performance of the LED 2 is affected by the ESD protection device 3. . [New content] The technical problem to be solved by this creation is to provide a light-emitting diode package structure having a built-in electrostatic protection function. This creation separates (layers) a light unit from an electrostatic protection unit to prevent the light unit from being disturbed by the static protection unit. In addition, the fluorescent material of the present invention does not directly contact the light-emitting unit, so the creation can avoid the luminous efficiency of the fluorescent material due to the high temperature generated by the light-emitting unit. Furthermore, the structural design of the creation is more suitable for various light sources, such as backlight modules, decorative light strips, lighting lamps, or scanner light sources, etc., which are the scope and products of the creation application. In order to solve the above technical problem, according to one of the aspects of the present invention, the light-emitting diode chip of the second type is a second package unit, a light-emitting unit, and a third: the conductive unit has at least The two conductive pins 2 are arranged adjacent to each other to form a shape, and the P package unit covers a portion of each of the conductive pins, and the ς generates a space connected to the recessed space. a space, and exposing the end thereof to the first package unit. The static electricity protection is placed in the far recess and electrically connected to the two conductors; the first and the second elements are placed in the (four) m ^ cover the static electricity Between two conductive pins. The third connection space is covered to cover the light emitting unit. f installed early 70 series valley placed in this capacity No:: different needs, the first unit can be the following L first implementation of the second package unit is - transparent material. 2 The first embodiment of the H package unit is - glory' and the phosphor material is mixed with silicone or phosphor powder or by mixing epoxy resin with phosphor powder. 3. Embodiment 2: The third package unit has a transparent material for frosting the light-emitting unit and a fluorescent material formed on the material. 4. The fourth embodiment: the third package unit has a fluorescent material for covering the light emitting unit and a transparent material formed on the glazing material M352135. Therefore, the LED package structure having the built-in electrostatic protection function has the following advantages: 1. Because the illumination unit is supported by the second package unit, so that the illumination unit can be at a higher level. High position. Therefore, the structure of the present invention can effectively improve the luminous efficacy of the light-emitting unit. 2. Since the electrostatic protection unit and the light-emitting unit are disposed apart from each other (layered) at different positions, the light-emitting efficiency of the light-emitting unit is not affected by the electrostatic protection unit. 3. Since the ESD protection unit and the illumination unit are disposed apart from each other (layered) at different positions, the heat dissipation performance of the illumination unit is not affected by the ESD protection unit. 4. In the above third embodiment, since the third package unit is composed of the transparent material and the two layers of the phosphor material, the phosphor material does not directly contact the light emitting unit, so the creation can be avoided. The luminous efficiency of the fluorescent material is lowered due to the high temperature generated by the light emitting unit. 5. In the fourth embodiment, the use of the transparent material can reduce the amount of the fluorescent material used on the one hand, and protect the fluorescent material by the transparent material in the upper layer. The advantage of being protected from external forces. In order to further understand the techniques, means and functions of this creation in order to achieve the intended purpose, please refer to the following detailed description of this creation 9 M352135 and the drawings, and believe that the purpose, characteristics and characteristics of the handle are obtained. The drawings are for reference and description only and are not intended to limit the scope of the present invention. [Embodiment] Referring to FIG. 2A to FIG. 2, the manufacturing method of the LED package structure of the first embodiment of the present invention includes the following steps: As shown in FIG. The unit 1 a has at least two conductive pins i 〇 a, and the at least two conductive pin processes a are arranged adjacent to each other to form a recessed space 1 〇〇 a. Each of the conductive pins 1 G a has an extension portion i Q ia and a bent portion 1 〇 2 a bent downward by the extension 邛 1 0 1 a, and the bending 邛 1 0 2 a are arranged adjacent to each other to form the recessed space 1 〇〇 a. Referring to FIG. 2A, a first package unit 2a is wrapped around a portion of each of the conductive pins 1a to form an accommodating space 2 connected to the recessed space 0a. ◦ a, and the end of each of the conductive pins 1 〇 a is exposed to the first package unit 23 . In other words, one end of each of the extensions 1 〇 1 a is exposed to the outside of the first package unit 2 a , and the first package unit 2 a is an opaque material. Referring to FIG. 2B, an ESD protection unit 3a is received in the recessed space 1 〇 〇 a and electrically connected between the two conductive pins 10 a. In the first embodiment of the present invention, the ESD protection unit 3a is electrically disposed on one of the conductive pins 1a, and the ESD protection unit 3a is electrically connected to the U1 through a wire W1a. In addition, M352135' has a conductive pin 1 〇a. The recess ^^=_ indicates 'the second package unit ^ is placed in the 矽黛-Γ曰'10 0 a to cover the electrostatic protection unit 3 a, wherein the second and second layers can be - have The package 1 of the light-reflecting substance is mainly = the light-reflecting substance may be a highly reflective material or a total reflection material. As shown in Fig. 2, the light-emitting unit is accommodated in the capacitance a::2, and is electrically connected to the two conductive pins 10 哕: 罝二t the light is early 5 a can be a light-emitting diode, and Ca is disposed on the second sealing unit, and the [, +, ΓΓ 5 a# is electrically connected to the == conductive connection through the two wires W2 a Foot 1Qa. In addition, the light-emitting unit 5a can transmit the high-reflection property of the first-sealing unit 4a to achieve high reflection efficiency=this time passes through the support of the second package unit 4a, so that the light is early 5 a can be in a higher position, so the structure of the present creation can increase the luminous efficacy of the lighting unit. In addition, since the static anti-cell element 3 a and the light-emitting unit 5 3 are separated from each other (layered) in the non-position, the luminous efficacy and heat dissipation performance of the light-emitting unit 5 a are not affected by the electrostatic protection unit 3 a. influences. Up - please refer to the second E diagram, a third package unit 6a is accommodated in the room 2 to cover the light-emitting unit 5a. In the first embodiment of the present invention, the third package unit 6a can be a transparent material. Therefore, as shown in the second embodiment, the first embodiment of the present invention provides a light-emitting diode package package 11 M352135 having a built-in electrostatic protection function, comprising: a conductive unit 1 a, a first The package unit 2a, a static anti-compensation unit 3a, a second package unit 4a, a light-emitting unit 5a, and a third package unit 6a. The conductive unit 1 a has at least two conductive pins 1 〇 a, and the at least two conductive pins 1 〇 a are arranged adjacent to each other to form a recessed space 1 〇〇 a. The first encapsulating unit 2a covers a portion of each of the conductive pins 1 〇3 to create an accommodating space 2 〇〇a communicating with the recessed space 1 〇〇a, and each of the conductive pins The first package unit 2a is exposed at the end of 丄〇a. The ESD protection unit 31 is disposed in the recessed space unit a (accommodating between the at least two electrical pins 1 〇a) and electrically connected to the two conductive pins 13 between. The second package unit 4a is disposed between the recessed space device and disposed between the at least two conductive pin processes a). The illuminating unit 5a is disposed in the accommodating Γρ: ^°^ and electrically connected to the two conductive pins 1 〇a 系, and is disposed in the accommodating portion by the second encapsulating unit 63 to cover the illuminating unit Light emitting unit 5a. The f12〇0a protection system is a second implementation of the built-in one-electrode chip package structure with built-in electrostatic protection. It can be seen from the figure t that the second implementation of the creation = one crystal two = unit 3! electricity: two;; = single coffee, - electrostatic protection: sealed - U 4 lighting unit 5 b, and a "early" . In addition, the biggest difference between the second embodiment of the present creation and the first embodiment of the M352135 is that the electrostatic protection unit 亓q ϊ=1: unit is in the 笫-香 & t ^- Therefore, the static anti-G 3b is transmitted through the two wires Wlb = the side of the pin 10b. Further, the light-emitting single is connected to the two conductive bs to be electrically placed therein - the conductive wire W 2 unit 5 b is through another stop, and the light = foot 1 〇 b. The wire W2b is electrically connected to the other - please refer to the 'showing that it is a light-emitting diode with built-in electrostatic protection function The third embodiment of the chip package structure::: not intended. It can be seen from the figure t that the third embodiment of the present invention differs greatly from the first embodiment in that, in the second embodiment, a third filter unit 6 is - Fluorescent material, and the fluorinated material can be made of (4) glue and (4) powder or mixed with epoxy resin and fluorescent powder. Please refer to the fifth figure, which is based on the creation. A cross-sectional view of a fourth embodiment of a light-emitting diode package structure of a buried electrostatic protection function. As can be seen from the figure, the fourth implementation of the present invention The difference between the example and the first embodiment is that, in the fourth embodiment, a third sealing unit 6 d has a transparent material 6 〇d for covering an illuminating unit 5 d and two are formed on the transparent material 6 The fluorescent material on 0 d is 6 d. Therefore, since the second package unit 6 d is composed of the transparent material 6 qd and the fluorescent material 6 1 d, the fluorescent material section 6 } Since there is direct contact with the light-emitting unit 5d, the present creation avoids the decrease in the luminous efficiency of the fluorescent material 61d due to the high temperature generated by the light-emitting unit 5d. A cross-sectional view of a fifth embodiment of a light-emitting diode package structure having a built-in electrostatic anti-M352135 can be created. As can be seen from the figure, the greatest difference between the fifth embodiment of the present creation and the first embodiment is that In a fifth embodiment, a third package unit 6 has a phosphor material 6 ie for covering the light-emitting unit 5 e and a f-shaped transparent material 6 on the phosphor material 6 1 e. Therefore, in the fifth embodiment, through the use of the transparent material 60 e, on the one hand
ϋί勞光材料6 1 e的使用量，另外—面可藉由該透明 材料6 0 e位於最上層來保護該榮光材料6丄e，以達到 免受外力的破壞的優點。 綜上所述’本創作將一發光單元與一靜電防護單元彼 ，:開（77層）4置，以避免該發光單元受到該靜電防護 t之干擾。因此’本創作具有内埋式靜電防護功能之發 “一極體晶片封裝結構係具有下列之優點： 社」、因為該發光單元透過該第二封裝單元的擇高，以 光單元能處於—較高的位置。因此，本創作的結 構可以有效地提升該發光單元的發光效能。 2、由於該靜電防護單元與該發光單元彼此分開（分 f丨於不同的位置’因此該發光單元的發光效能不會 又到5亥靜電防護單元的影響。 3、 由於該靜電防護單元與該發光單元彼此分開（分 、:）=於不㈣位置，因此該發光單元的散熱效能不會 又到S亥靜電防護單元的影響。 4、 於上述第四實施例中，因為該第三封裝單元6 d 係由該透明材料6 Q d及該螢光材料6工d兩層所組 14 M352135 成，所以該螢光材料6 1 d沒有直接接觸到發光單元5 d，因此本創作可避免因發光單元5 d所產生的高溫而降 低螢光材料6 1 d的發光效率。 5、於上述第五實施例中，透過該透明材料6 0 e的 使用，一方面可減少該螢光材料6 1 e的使用量，另外一 面可藉由該透明材料6 0 e位於最上層來保護該螢光材 料6 1 e，以達到免受外力的破壞的優點。 惟，以上所述，僅為本創作最佳之一的具體實施例之 詳細說明與圖式，惟本創作之特徵並不侷限於此，並非用 以限制本創作，本創作之所有範圍應以下述之申請專利範 圍為準，凡合於本創作申請專利範圍之精神與其類似變化 之實施例，皆應包含於本創作之範疇中，任何熟悉該項技 藝者在本創作之領域内，可輕易思及之變化或修飾皆可涵 蓋在以下本案之專利範圍。 【圖式簡單說明】 第一圖係為習知具有靜電防護功能之發光二極體晶片封 裝結構之剖面示意圖； 第二A圖至第二E圖分別為本創作具有内埋式靜電防護 功能之發光二極體晶片封裝結構的第一實施例之 封裝流程立體示意圖； 第三圖係為本創作具有内埋式靜電防護功能之發光二極 體晶片封裝結構的第二實施例之剖面示意圖； 第四圖係為本創作具有内埋式靜電防護功能之發光二極 15 M352135 第五圖係為::::2的第三實施例之剖面示意圖； 體晶片封裝結構的内^f護f能之發光二極 第六圖係為本創作具有内埋剖^意圖；以及 體晶片封裝么靜電防濩功能之發光二極 衣、、Q構的第五實施例之剖面示意圖。 【主要元件符號說明】 [習知j 基底結構 1 發光二極體 靜電防護裝置 螢光膠體 導線 [本創作] (第一實施例） 導電單元 2 4 W 1 正電極端 負電極端 正電極端 負電極端 正電極端 負電極端 W2 2 2 2 2 第一封褽單亓 靜電防護單元 導電接腳 1 0 a 凹陷空間 1 0 0 a 延伸部 1 0 1 a 彎折部 1 0 2 a 容置空間 2 0 0 a 16 M352135使用 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳In summary, the present invention places a light-emitting unit and an electrostatic protection unit on the open (77 layers) 4 to prevent the light-emitting unit from being disturbed by the static electricity protection. Therefore, the present invention has a built-in electrostatic protection function. The "one-pole chip package structure has the following advantages:", because the light-emitting unit passes through the height of the second package unit, the light unit can be in- High position. Therefore, the structure of the present invention can effectively improve the luminous efficacy of the light-emitting unit. 2. Since the ESD protection unit and the illuminating unit are separated from each other (in different positions), the illuminating performance of the illuminating unit will not be affected by the 5 HAI electrostatic protection unit. 3. Because of the ESD protection unit The light-emitting units are separated from each other (minute, :) = at the (four) position, so the heat dissipation performance of the light-emitting unit does not affect the electrostatic protection unit of the S-hai. 4. In the fourth embodiment described above, because the third package unit 6 d is formed by the transparent material 6 Q d and the fluorescent material 6 d layer 14 M352135, so the fluorescent material 61 d does not directly contact the light-emitting unit 5 d, so the creation can avoid the illumination The high temperature generated by the unit 5 d reduces the luminous efficiency of the fluorescent material 61 d. 5. In the fifth embodiment described above, the use of the transparent material 60 e can reduce the fluorescent material 6 1 e On the other hand, the fluorescent material 6 1 e can be protected by the transparent material 60 e at the uppermost layer to achieve the advantage of being protected from external forces. However, the above is only the best for the creation. One of the specific embodiments Detailed description and schema, but the characteristics of this creation are not limited to this, and are not intended to limit the creation. All the scope of this creation shall be subject to the following patent application scope, and the spirit of the patent application scope of this creation and its The examples of similar changes should be included in the scope of this creation. Anyone who is familiar with the art in this field of creation can easily think of changes or modifications that can be covered in the following patents. Brief Description of the Invention The first figure is a schematic cross-sectional view of a conventional LED package structure with electrostatic protection function; the second to second E diagrams respectively create a light-emitting diode with built-in electrostatic protection function. FIG. 3 is a schematic cross-sectional view showing a second embodiment of a package structure of a light-emitting diode package having a built-in electrostatic protection function; The present invention has a built-in electrostatic protection function of the light-emitting diode 15 M352135. The fifth figure is a cross-sectional view of the third embodiment of ::::2; The sixth embodiment of the light-emitting diode of the inner structure of the structure is a built-in cross-section; and the fifth embodiment of the light-emitting diode of the body chip package Schematic diagram of the cross section. [Major component symbol description] [Learn j base structure 1 Luminous diode electrostatic protection device fluorescent colloidal wire [This creation] (First embodiment) Conductive unit 2 4 W 1 Positive electrode terminal Negative electrode end Electrode end Negative electrode end Positive electrode end Negative electrode end W2 2 2 2 2 First 褽 Single 亓 Electrostatic protection unit Conductive pin 1 0 a Recessed space 1 0 0 a Extension 1 0 1 a Bending part 1 0 2 a accommodating Space 2 0 0 a 16 M352135
第二封裝單元 4 a 發光單元 5 a 第三封裝單元 6 a 導線 W 1 (第二實施例） 導電單元 lb 第一封裝單元 2 b 靜電防護單元 3 b 第二封裝單元 4 b 發光單元 5 b 第三封裝單元 6 b 導線 W 1 (第三實施例） 第三封裝單元 6 c (第四實施例） 發光單元 5 d 第三封裝單元 6 d (第四實施例） 發光單元 5 e 第三封裝單元 6 e 、W 2 a 導電接腳 、W2 b 透明材料 螢光材料 透明材料 榮光材料Second package unit 4 a light-emitting unit 5 a third package unit 6 a wire W 1 (second embodiment) conductive unit 1b first package unit 2 b electrostatic protection unit 3 b second package unit 4 b light-emitting unit 5 b Three package unit 6 b wire W 1 (third embodiment) third package unit 6 c (fourth embodiment) light emitting unit 5 d third package unit 6 d (fourth embodiment) light emitting unit 5 e third package unit 6 e , W 2 a Conductive pin, W2 b Transparent material Fluorescent material Transparent material Glory material