M346020 八、新型說明： 【新型所屬之技術領域】 本創作係有關於一種光檢測器，其特別有關於一種以氧化鋅薄膜 作為主動層並應用於紫外光範圍之光檢測器。 【先前技術】 隨著太空科技的日益發展，紫外光（ultravi〇let，UV)波段偵測器 的研究越顯重要；自1801年由w· Ritter和W. H. Wollaston發現紫 外光波段後，一些相關的研究及應用，一直受到重視。太陽是紫外光M346020 VIII. New description: [New technical field] This creation is about a photodetector, which is particularly concerned with a photodetector using a zinc oxide film as an active layer and applied to the ultraviolet range. [Prior Art] With the development of space technology, the research of ultraviolet (ultraviolet) (UV) band detectors is more important; since the discovery of the ultraviolet band by w. Ritter and WH Wollaston in 1801, some related Research and application have always been valued. The sun is ultraviolet light
的主要來源，一般可分為UV-A ( 400nm〜320nm )、UV-B (320nm〜280nm)、UV-C (280nm以下）三個波段。由於臭氧層和 其匕大氣層氣體會吸收來自太陽的紫外光，只有波長大於28〇nm的紫 外光可到達地球表面，因此Uv-A *UV_B波段的紫外光會影響人類 的健康及地球的生齡統。由於紫外光被歧的應狀研究包括紫外 光天文予、火焰偵測、飛彈偵測、燃燒技術、空對空通訊、污染監測、 酉學、殺Η及農鮮，所崎有效率且可信賴的紫外光偵測器的需求 日益增加。 b將光虎轉換為電訊號的光檢測器(Photodetector)的習知 化域—種·分暇採用纽管的光倍增管㈣_論_咏削丁）、 吏用夕材料的光檢測$、以及使用寬能隙材料之光檢測器。在這三種 ▲之中紅知的成本高、需要絲作電壓、而且真空管容易破 碎。石夕光檢測器則具有製作容易、成本低廉、與低操作電壓等特性。 M346020 又’紫外光檢測元件仍然以使用矽材料之光二極體所構成。然而，受 限於石夕之能隙在室溫下僅僅只有1.2 eV。梦基光二極體之最靈敏波長 並非洛在紫外光區域以致於在紫外光區域的響應非常低。因此，若以 寬能隙材料製作之光檢測器，由於材料可以具有較大的能隙 (BandGap)。故非常適合應用於紫外光的偵測。 為了解決上述問題，有需要提供一種應用於紫外光波段之光檢測 器以克服先前技術的缺點。職是之故，申請人乃細心試驗與研究，並 -本鍥而不捨賴神，終於研究出以氧化鋅細作為絲層並應用於 紫外光範圍之光檢測器。 【新型内容】 本創作之主要目的在提供一種應用於紫外光波段之光檢測器，係 以物理氣相沈積法將氧化鋅薄膜形成於魏板上，並作為該光檢測器 之主動層可有效應用在光波長約為33〇·〜之紫外光範圍。 為達上迷目的’本創作提出一種應用於紫外光波段之光檢測器，The main sources are generally divided into three bands: UV-A (400 nm to 320 nm), UV-B (320 nm to 280 nm), and UV-C (below 280 nm). Since the ozone layer and its helium atmosphere absorb ultraviolet light from the sun, only ultraviolet light with a wavelength greater than 28〇nm can reach the surface of the earth. Therefore, UV light in the Uv-A*UV_B band affects human health and the age of the earth. . Due to the investigation of UV light, including ultraviolet astronomy, flame detection, missile detection, combustion technology, air-to-air communication, pollution monitoring, dropout, killing and farming, it is efficient and reliable. The demand for UV detectors is increasing. b. The light-sensing field of the photodetector that converts the light tiger into a telecommunication signal—the light multiplier tube that uses the new tube (4) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And a photodetector using a wide bandgap material. Among the three types of ▲, the cost is high, the wire is required to be voltage, and the vacuum tube is easily broken. The Shi Xiguang detector has the characteristics of easy fabrication, low cost, and low operating voltage. M346020 and 'UV detection elements are still composed of photodiodes using germanium materials. However, the energy gap limited to Shi Xi is only 1.2 eV at room temperature. The most sensitive wavelength of the dream-based diode is not in the ultraviolet region so that the response in the ultraviolet region is very low. Therefore, if a photodetector is made of a wide bandgap material, the material can have a large bandgap (BandGap). Therefore, it is very suitable for the detection of ultraviolet light. In order to solve the above problems, it is desirable to provide a photodetector for use in the ultraviolet light band to overcome the disadvantages of the prior art. The job is the reason, the applicant is careful testing and research, and - this is not a reluctance to God, and finally developed a photodetector with fine zinc oxide as a silk layer and applied to the ultraviolet range. [New content] The main purpose of this creation is to provide a photodetector for ultraviolet light, which is formed by forming a zinc oxide film on a Wei plate by physical vapor deposition, and is effective as an active layer of the photodetector. It is applied in the ultraviolet range of about 33 〇·~. In order to achieve the goal, this paper proposes a photodetector for use in the ultraviolet band.
、&插气屯極魏板用以作為該級測ϋ之承載本體；該氮化 铭缓衝層以_氣概積法形成於該基板上 在50至150 nm之間； 鋁緩衝層上，該氧化翁 ，該氮化鋁緩衝層厚度約 »亥氧化鋅薄膜以物理氣相沈積法形成於該氮 1呂緩衝層上，該氧化鋅_厚度約在500至2500 彼覆層以物理氣相沈積法形雜該氧化鋅薄膜上 度約在50至150 nm之間· nm之間；該氮化鋁 ，該氮化鋁披覆層厚 以及該指插式電極以物理氣相沈積法形成 M346020 於該氮化鋁披覆層上。該氮化鋁緩衝層用以提高吸收效率，阻止電子 —電洞對向下擴散移動與阻擋來自該基板的載子；該氧化鋅薄膜用以 在照光後產生級電流現象；該氮祕坡覆層収減少該氧化辞薄膜 之表面能階，降低低頻内部增益現象與降低該光檢測器之暗電流·以 及该扣插式電極用以接收電子一電洞對以產生電流。 根據本創作之應用於紫外光波段之光檢測器之一特徵，其中該氧 化鋅薄膜之能隙值係不小於3·5，以確保該光檢測器可實質應用在光波 長約為330 nm〜370 nm之紫外光範圍。 根據本創作之應用於紫外光波段之光檢測器之一特徵，其中該氧 化鋅薄膜之平均粗糙度在5〜2〇 nm之間。 為讓本創作之上述和其他目的、特徵、和優點能更明顯易懂，下 文特舉數她佳實關，並配合所_式，作詳細說明如下。 【實施方式】 雖然本創作可表現為不同形式之實施例，但附圖所示者及於下文 中_者係為摘作可之較佳實施例，並請了解本文所揭示者係考量 為本創作之-範例，且並非意關以將本創作限制於圖示及/或所描述 之特定實施例中。 月ί…、第1圖，如圖所示為該光檢測器1⑻之側視圖。該紫外光 、又之光核測為100，其包含一基板11〇 ; 一氮化鋁緩衝層; 一氧 、辛薄膜130 ’ 一氮化紹披覆層16〇 ;以及一指插式電極。該基板 乂作為u亥光;^測為1〇〇之承載本體；該氮化紹緩衝層mo以物 M346020 理氣相沈積法形成於該基板11〇上，該氮化銘緩衝層丨2〇厚度約在5〇 至150 nm之間；該氧化鋅薄膜13〇以物理氣相沈積法形成於該氮化鋁 缓衝層120上’該氧化鋅薄膜130厚度約在500至2500 nm之間；該And & the gas-filled bungee plate is used as the bearing body of the stage; the nitriding buffer layer is formed on the substrate by the gas accumulation method between 50 and 150 nm; on the aluminum buffer layer, The oxidized metal oxide layer has a thickness of about 5,000 galvanized thin film formed by physical vapor deposition on the nitrogen argon buffer layer, and the zinc oxide has a thickness of about 500 to 2500. The deposited zinc oxide film has an upper degree of between about 50 and 150 nm·nm; the aluminum nitride, the thickness of the aluminum nitride coating layer, and the finger-inserted electrode form M346020 by physical vapor deposition On the aluminum nitride coating layer. The aluminum nitride buffer layer is used for improving the absorption efficiency, preventing the electron-hole diffusion from moving downward and blocking the carrier from the substrate; the zinc oxide film is used to generate a step current phenomenon after illumination; The layer reduces the surface energy level of the oxidized film, reduces the low frequency internal gain phenomenon and reduces the dark current of the photodetector, and the button electrode receives the electron-hole pair to generate a current. According to one feature of the photodetector applied to the ultraviolet light band of the present invention, the gap value of the zinc oxide film is not less than 3.5, to ensure that the photodetector can be substantially applied at a wavelength of about 330 nm. UV range of 370 nm. According to one feature of the present invention, a photodetector for use in the ultraviolet light band, wherein the zinc oxide film has an average roughness of between 5 and 2 〇 nm. In order to make the above and other purposes, features, and advantages of this creation more obvious and easy to understand, the following is a good example of her and is described in detail below. [Embodiment] Although the present invention can be embodied in different forms, the embodiments shown in the drawings and the following are preferred embodiments, and the disclosures of the present disclosure are considered as The examples are not intended to limit the present invention to the illustrated and/or described specific embodiments. Month..., Figure 1, is a side view of the photodetector 1 (8) as shown. The ultraviolet light and the photon are 100, which comprise a substrate 11 〇; an aluminum nitride buffer layer; an oxygen, a sensitized film 130 Å a nitride coating layer; and a finger-insertion electrode. The substrate is used as a carrier body of the first layer; the nitride buffer layer mo is formed on the substrate 11 by the M346020 vapor deposition method, and the nitride buffer layer Between about 5 Å and 150 nm; the zinc oxide film 13 形成 is formed on the aluminum nitride buffer layer 120 by physical vapor deposition method. The zinc oxide film 130 has a thickness of about 500 to 2500 nm;
氮化鋁披復層160以物理氣相沈積法形成於該氧化鋅薄膜^^丄，故 氮化鋁披覆層160厚度約在50至150 nm之間；以及該指插式電極！4〇 以物理氣相沈積法形成於該氮化鋁披覆層16〇上。該氮化鋁緩衝層 用以提高吸收效率’阻止電子—電洞對向下擴散移動與阻擔來自該基 板110的載子；該氧化辞薄膜13〇肖以在照光後產生光致電流現象； 該氮化銘披覆層160用以減少該氧化鋅薄膜130之表面能階，降低低 頻内部增益現象與降低該光檢測器1〇〇之暗電流；以及該指插式電極 140用以接收電子—電洞對以產生電流。需注意的是，該氧化辞薄膜 130之此隙值係不大於3 5 |為無摻雜任何雜質之半導體材料，該光檢 測為100可實質應用在光波長約為33〇 nm〜37〇唧以下之紫外光波 段。詳細來說’該氮她披覆層_係由於半導體在為成長時會在 .表面產生許多因表面能階所形成_(_)，導致載子藉由這些^ .從金屬穿過轉進人半導體。使元件在低織生内部增益，若在該氧 化辞溥膜130上方成長一層寬能隙的半導體披覆層廳，可減少吸收 層表面能階，降低低_部增益現象。_藉由寬㈣的披覆層_ 與金屬形成較高的蕭特基位障降低元件暗電流。該氮化銘緩^⑽ 之功能係可將人縣激發產生的電子_制對舰在該氧化鋅薄膜⑽ 内^高魏_，舰撕蝴+_請肖 動 阻齡自基板丨㈣載子。糾，該基板丨料騎、氧倾與藍寶 9 M346020 石中之-種材料。在本創作之最佳實施例中，該基板ιΐ(Μ系為藍寶石 基板110。該氮化銘薄臈之能隙值係不小於6。在材料特性上，該氧化 鋅薄膜130之载子遷移率係在5〇〜19〇 cm2/v_s;平均粗糖度在5〜如 mn之間，·光響應波長約為33〇nm〜37〇nm之間。 …請參照第2圖，其所示為該光檢測器励之上視圖。其虛線部分 係為》亥光；^測益100之主動區15〇。該指插式電極_係選自於錄、 金、銀、鈦、倾銘中之一種材料。在本創作之最佳實施例中，該指 插式電極刚係為銘且其指隙⑻與指寬(w)皆約為10哗。其中該指插 式電極140係為方形結構。 “上所述’本創作揭示—種應用於紫外光波段之光檢測器刚。 該光檢測器卿包含一基板110; 緩衝層m，·-厚度約在5⑻至2漏〜城5G至15G nm之廳 至2500 nm之氧化鋅薄膜130; —厚度約 在50至150 nm之氮化鋁披覆芦 測哭1〇π叮奋^ U〇,以及一才曰插式電極140。該光檢 可u應用在光波長約為33〇邮〜37〇肺之紫外光波段。 作η t齡已^述她實闕揭示，然其並非用以限定本創 H此技藝者’在顿離本鋪之精神和範關，當可作各 不會破壞此創作的精神。因可以作各型式的修正與變化’而 範圍所界定者為準。 創作之保護範圍當視後附之申請專利 M346020 【圖式簡單說明】 圖1顯示為該光檢測器之侧視圖。 圖2顯示為該光檢測器之上視圖。 【主要元件符號說明】 100光檢測器 -110基板 • 120氮化鋁緩衝層 130氧化鋅薄膜 140指插式電極 150主動區 160氮化鋁披覆層 11The aluminum nitride overcoat layer 160 is formed by the physical vapor deposition method on the zinc oxide film, so that the aluminum nitride cladding layer 160 has a thickness of about 50 to 150 nm; and the finger-inserted electrode! 4〇 was formed on the aluminum nitride cladding layer 16 by physical vapor deposition. The aluminum nitride buffer layer is used for improving the absorption efficiency to prevent the electron-hole from diffusing downwardly and blocking the carrier from the substrate 110; the oxidized film 13 is used to generate a photocurrent phenomenon after illumination; The nitriding layer 160 is used to reduce the surface energy level of the zinc oxide film 130, reduce the low frequency internal gain phenomenon and reduce the dark current of the photodetector 1; and the finger insertion electrode 140 is used to receive electrons. - A pair of holes to generate current. It should be noted that the gap value of the oxidized film 130 is not more than 3 5 | is a semiconductor material without any impurity, and the light detection is 100 can be practically applied at a wavelength of about 33 〇 nm to 37 光. The following ultraviolet bands. In detail, the nitrogen coating is due to the fact that the semiconductor will produce many _(_) due to the surface energy level when it grows up, causing the carrier to pass through the metal. semiconductor. By making the element gain inside the low weave, if a semiconductor fringe hall with a wide gap can be formed above the oxidized stencil film 130, the surface energy level of the absorbing layer can be reduced, and the low _ gain phenomenon can be reduced. _ By the wide (four) coating layer _ with the metal to form a higher Schottky barrier to reduce the dark current of the component. The function of the nitriding key ^(10) can be used to generate the electrons generated by the people's county. The ship is in the zinc oxide film (10). The high-speed _, the ship tearing the butterfly + _ please the resistance of the age from the substrate 四 (four) carrier . Correction, the substrate material riding, oxygen tilting and sapphire 9 M346020 stone in the material. In a preferred embodiment of the present invention, the substrate ΐ is a sapphire substrate 110. The nitridence value of the nitriding layer is not less than 6. In terms of material properties, the carrier migration of the zinc oxide film 130 The rate is between 5〇~19〇cm2/v_s; the average crude sugar is between 5~such as mn, and the light response wavelength is between 33〇nm and 37〇nm. ...Please refer to Figure 2, which shows The photodetector is energized in a top view. The dotted line portion is "Haiguang"; the active region of the measuring 100 is 15 〇. The finger-inserted electrode _ is selected from the group consisting of gold, silver, titanium, and A material. In a preferred embodiment of the present invention, the finger-insertion electrode is just inscribed and its finger gap (8) and finger width (w) are both about 10. The finger-insertion electrode 140 is a square structure. "The above description" discloses a photodetector applied to the ultraviolet light band. The photodetector includes a substrate 110; the buffer layer m, ·- thickness is about 5 (8) to 2 leaks ~ city 5G to 15G The zinc oxide film 130 of the chamber of nm to 2500 nm; the aluminum nitride coated with a thickness of about 50 to 150 nm, and the 哭 叮 ^ 〇 〇 〇 〇 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 电极 电极 电极 140 The photodetection can be applied to the ultraviolet wavelength band of the light wavelength of about 33 〇 mail ~ 37 。. The η t age has been described by her real disclosure, but it is not used to limit the creation of this artist. The spirit and scope of this shop can be used as a spirit that will not undermine this creation. It can be used for all types of revisions and changes' and the scope is defined. The scope of protection of the creation is attached to the patent application M346020. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side view of the photodetector. Fig. 2 is a top view of the photodetector. [Main component symbol description] 100 photodetector-110 substrate • 120 aluminum nitride buffer layer 130 Zinc oxide film 140 refers to the insertion electrode 150 active region 160 aluminum nitride coating layer 11