TWM344701U - Etching tank structure improvement - Google Patents

Etching tank structure improvement Download PDF

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Publication number
TWM344701U
TWM344701U TW97206881U TW97206881U TWM344701U TW M344701 U TWM344701 U TW M344701U TW 97206881 U TW97206881 U TW 97206881U TW 97206881 U TW97206881 U TW 97206881U TW M344701 U TWM344701 U TW M344701U
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Taiwan
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liquid
tank
etching
line
substrate
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TW97206881U
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Chinese (zh)
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Yan-Jian Cai
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Century Display Shenxhen Co
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Priority to TW97206881U priority Critical patent/TWM344701U/en
Publication of TWM344701U publication Critical patent/TWM344701U/en

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M344701 八、新型說明: 【新型所屬之技術領域】 本創作係有關於-種侧浸泡槽,特別是關於—種可形成 内槽停止注液時能維持馬達穩定輸出,且可有效節省_液之 餘刻次泡槽結構改良。 【先前技術】 阻覆主要功能是藉由化學反應或是物理作用的方式將沒有被光M344701 VIII. New description: [New technical field] This creation department has a kind of side soaking tank, especially for the kind that can form the inner tank to stop the liquid injection to maintain the stable output of the motor, and can effectively save _ liquid The residual bubble structure is improved. [Prior Art] The main function of blocking is that it will not be light by chemical reaction or physical action.

μ絲’以纖糊細轉,在半導體元件 的製作過私中疋一個必要且相當重要的流程。 而現在廣泛應用在半導體製程上的餘刻技術主要有兩種一種是利用化 學反應所進行_、式侧(wetetG_);另—種是物理作用來進行的 乾式餘』(Dry Etching)。濕式*刻是最早被使用的#刻技術,它是利用 欲圖案化層與特定溶㈣鱗無方向性德學反朗達成,目此溶液濃 度、侧咖、侧的赫方式往往成為控麵式侧反應的重要機制。 請-併參閱第1⑷圖與第!(b)圖,其係分別為習知對基板上之雜 刻層進行濕式侧_示意__終止後的示意圖。如_示,習知的 濕式蝕刻製程中一般採用兩階段式的蝕刻模式,也就是以主蝕刻 (mam-etching) 搭配上過侧(〇ve卜etc_)的錐角(ta_ ^ 以獲得較為絲_咖形,餅_覆侧_上之細能夠具有 較佳的轉覆蓋能力。而—般過侧步驟係浸賴 將基板1〇浸置於侧液12中,如第】⑷賊示,再利用基板12 = 動(osculation)賴加蚀刻液的攪動,以增加侧向侧速率,達到修飾錐 角之目的。但在目前的侧浸泡槽設計下,請參閱第彳⑻圖所示,械 刻,止時,將基板10自蝕刻浸泡槽14移出的階段,大量的蝕刻液12伴 隨著基板10由出口閘門處16溢流至外槽,且隨著基板1〇面積越來越大 的趨勢下’將導致液切風刀(air Gurtain) 18無法有效將侧液刮除,而 導致侧液12隨著基板1〇攜至下一個製程步驟,如水洗製程段,而衍生 5 M344701 無謂的耗損。 因此’本創作針對上述银刻浸泡槽之缺點,提供一種嶄新的蝕刻浸泡 槽結構改良,來解決現有之缺失。 【新型内容】 本創作之主要目的在於提供一種蝕刻浸泡槽結構改良,其在供液壓力 、调節管路上增設有一自動控制單元,以當蝕刻終止時,啟動壓力調節閥, 以使幫浦裝置無須停止運轉,而在回復對對内槽供液時幫浦可以立刻穩定 '輸出,以減少幫浦非穩定輸出時所造成的蝕刻良率降低。 本創作之另一目的在於提供一種姓刻浸泡槽結構改良,其能有效避免 鲁基板送出時餘刻液隨著基板由出口閘門溢流至外槽,以減少蝕刻液的消耗。 本創作之再一目的在於提供一種蚀刻浸泡槽結構改良,其更增設有一 刮刀’以對基板表面之银刻液進行初步清除。 本創作之又一目的在於提供一種姓刻浸泡槽結構改良,其能有效節省 因無法有效移除基板表面之蚀刻液所可能造成的無謂浪費。 本創作之又一目的在於提供一種蚀刻浸泡槽結構改良,其能有效降低 幫浦不穩定輸出的情況,而提高整個蝕刻製程的良率。 為達以上之目的,本創作提供一種姓刻浸泡槽結構改良,其包含有一 外槽,其上具有數個喷灑裝置以及一位於底部的外槽排液孔;一位於外槽 ♦内的内槽,其底部具有至少一内槽注液/排液孔;一分設於該外槽内外與該 、内槽内的傳輸裝置,其係用以進行基板的運輸;—用以容置侧液的集液 、一用以加壓蝕刻液的供液加壓管路,其利用一幫浦進行加壓;一喷灑 官路,其一端係連接至喷灑裝置,另一端係連接至供液加壓管路與一具有 一壓力調節閥的供液壓路調節管路;一注液/排液管路,其一 至 槽注=/排液孔,另一端係連接至供液加壓管路與該供液壓路調節管路;一 集液官路,其一端係連接至外槽排液孔,而另一端係連接至注液/排液管路 與集液槽;以及-設置於供液壓路調節f路上的自動控制料,其係以當 内槽執行停止注液時,啟動壓力調節閥,以使幫浦無須停止運轉。田 茲為使貴審查委員對本創作之結構特徵及所達成之功效更有進一步 6 M344701 之瞭解與認識,謹佐以較佳之實施例圖及配合詳細之說明,說明如後: 【實施方式】 本創作乃鑑於習知技術之蚀刻浸泡槽之架構,在餘刻終止時,將基板 自#刻浸泡槽移出的階段,大量的蝕刻液伴隨著基板由出口閘門開口處溢 流至外槽,而導致液切風刀(aircurtain)無法有效將蝕刻液刮除,使得蝕 刻液隨著基板攜至下一個製程步驟,如水洗製程段,而衍生無謂的耗損, •因此本創作之精神乃在濕式蝕刻製程終止時,採適當的蝕刻液水位調節, •使钱刻液水面降至基板下方,以有效地避免蝕刻液隨著基板攜至下一個製 程。更者,未避免改良設計後,幫浦運作上面臨反覆啟動的不穩定輸出情 籲況’更在幫浦壓力調節管路新增設一自動控制單元,以形成一旁接管路, 使幫浦無須停止運作。 接續’下列說明係針對上述本創作之精神所提出之具體實施例說明, 但須陳明的是下列說明僅是為使熟悉該項技術更清楚、明白本創作,而並 不能以此具體實施例來作為本創作之權利範圍的侷限。 請一併參閱第2圖、第3圖與第4圖,其係各為本創作之蚀刻浸泡槽 改良後之整體架構示意圖、蝕刻浸泡槽部分的結構示意圖;以及蝕刻浸泡 槽之蝕刻液供應與回水管路設計的結構示意圖。 請一併參閱第2圖與第3圖,如圖所示,本創作之蚀刻浸泡槽2〇包 鲁含有一外槽22,其兩對應侧各具有一可供基板穿移出的入/出口閘門24、 _ 26,外槽22底部具有至少一排液孔28 ; 一位於外槽22上方的喷灑裝置 .30’喷麗裝置30之配置可與基板進出方向平行或垂直;一位於外槽22内 的内槽32,内槽32其係為一箱體,箱體兩端各有一進出開孔(圖中未示), 開孔處與外槽相同各有-閘門(圖中未示),在浸泡侧時阻止钱刻液外 流,内槽32底部具有至少二個貫穿外槽22之注液/排液孔34,其係可供 餘刻液排除及注入;一組傳動裝置36,其係分設於外槽22内與内槽32 内,以輸送基板進行浸泡式餘刻與開始/終止濕式麵製程; 一位於入/出口 閘門口之刮刀38 ’其係用以初步刮除基板表面大部份的侧液,此刮刀 38與經侧過後的基板表面尚有一安全距離,以避免刮傷基板表面上之電 7 M344701 路’以及位於外槽22内且運作於刮力38刮除基板表面_液步驟後的 液切風刀40,以大幅提高餘刻液的移除率。 贫接續,進械刻浸泡槽改良後之管路配置說明。請一併參閲第2圖與 =4圖’如圖麻,在f路配置包含有—集液槽42,絲槽42上有三個 ,入管線,各別為接至加壓_ 68、自動控棚54、三通闕6〇 ; 一魏 g路44 ’其一端係連接至喷灑裝置3〇 ’而另一端先經過供液控制自動間 後接續形成兩稱,其係分職接至—供液加壓管路46與—供液壓力 ..調節管路48 ’其供液加壓管路46接續上述之加而浦68,而在連接至嘴 凝裝置的喷濃管路44上裝設之-供液控制自動閥5〇可控制喷灑裝置3〇 φ之綱液注入喷麗之開目,續上’供液壓力調節管路48另一端上裝設有一 壓力調節閥Η 52…壓力調_門52後接續—自動控綱54,再由自動 控制閥54 -端係連接至集液槽42 ;續上,一注液/排液管路56,其一端係 ,接至二個注液/排液孔34 ’而另-端係連接係形成兩個通路,其係分別 j至-佩控糊57與讎回水_自_ 64,其巾供雜綱57 =、,、只有供液加麼管路46與供液壓力調節管路48,目水控制自動閥64後接 ^有-三關6G W及…絲管路58,其—端艇接至外槽22底部之 排液孔28,另-端係接續一三通閥6〇其下形成三個通路第一通路係連 接至注液/排液管路56,第二通路係連接至集液槽42,而第三通路係連接 #至-稀釋回水端62,其中集液管路明連接至注液,排液管路%之管路上 更裝設有一槽體回水控制自動閥64。 • 接續,請-併參閱第5〜9圖,其係餘刻步驟進行時的相關步驟示意 回。如圖所不,首先將一基板66經由傳送裝置36由入口閉門24送入至 外槽22内;接續啟動喷灑裝置30,以對基板66進行主蝕刻製程。 在上述主蝕刻製程步驟進行時,入口閘門24、出口閘門26、内槽的 2門會進行關閉以防止韻刻液外溢,管路端係啟動供液控制自賴5〇,其 供液控制自動閥50此時為開啟狀態,利用一加壓幫浦邱將集液槽42之 蝕刻液加壓_,再通職液加鮮路46職難注人至賴管路私透 過喷灑裝置30對基板進行喷麗主蚀刻。 8 M344701 而進行主侧後,進行浸泡的過蚀刻的步驟,如第7 _示。而此步 驟進行時’ f路端係啟動供雜制自動閥57,此時供液控制自動閥5 關閉狀態’喷灑裝置30停止喷灑,加壓幫冑68將集液槽42之侧液加 壓抽出通職液加壓管路46加驗人纽液/概魏56,以使内槽於 開始注入餘刻液,以對基板66進行過餘刻步驟。 再如,第8騎示,娜雌狀量已達聰奴的高麟,為了辦 •加__動,並絲侧_量,因鱗姐液麟細啟鎌管路^ .—至集液槽42的通路,以回收侧液,此時槽體回水控制閥64為關閉狀態, 使其内槽32為》持續性供應侧液’轉持整個侧_擾賴環,如^ φ 9圖所示。 $ 再者,請參閱第10〜12圖,其係侧步驟完成後的各階段步驟示音 ^首先如第10圖所示,當侧步驟完成後,、終止餘刻液的供液動作,二 就是關閉供液控制自動閥57。並啟動槽體回水控制閥64(此時内槽32内 蝕刻液的量係利用槽體回水控制閥64控制,其控制方式可為定時及液位感 應器控制,目其管賴量·岐’故其可以輯來㈣_ 32之姓刻^ 量)’以將外槽22與内槽32的蝕刻液排出,以使外槽22與内槽32内的 钱刻液液面降至基板下方。 在上述步驟中,同時啟動供液壓力調節管路48上的自動控制閥54, _以作騎接管路,而使幫職餅止運轉。雜可在回復供㈣ •夠立即提供穩定的輸出。 當槽内钱刻液之液面已降至基板下方時,如第11圖所示,藉由傳動裝 置36輸送基板66至位於出口閘門26前的刮刀38,先利用刮刀38刮除 基板66表面的蝕刻液,進行初步蝕刻液移除。接續如第12圖所示,再利 用液切風刀40再一次將蝕刻液清除,以有效避免蝕刻液隨著基板66攜至 下一個製程步驟,如水洗製程段,而衍生無謂的耗損。 本創作藉由在製程終止時將蝕刻液降低至基板下方,以有效避免基板 送出時餘刻液隨著基板由出口閘門溢流至外槽,更者,設置兩階段式的餘 刻液清除步驟’已減少基板表面餘刻液載出量。此外,本創作在供液壓路 9 M344701 调節管路上’設置有一自動控制閥,以當該内槽執行停止注液時,啟動該 壓力調節閥,形成一旁接管路,以使幫浦無須停止運轉,這樣在回復供^ 時,幫浦能夠立即提供穩定的輸出。 ’、 惟以上所述者,僅為本創作一較佳實施例而已,並非用來限定本創作 實施之範圍,故舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精 神所為之均等變化與修飾,均應包括於本發明之申請專利範圍内。 【圖式簡單說明】 •第1 (a)圖係習知對基板進行浸泡蝕刻的示意圖。 第1 (b)圖係習知對基板進行蝕刻液去除的示意圖。 、 春第2圖係為本創作之立體示意圖。 第3圖係為本創作之餘刻浸泡槽部分的元件示意圖。 第4圖係為本創作之银刻液管路配置示意圖。 苐5圖係為基板利用本創作之蚀刻浸泡槽結構之傳動裝置輸送至外槽内, 以進行蝕刻的示意圖。 第6圖係為基板輸送至本創作之姓刻浸泡槽之外槽内,等待進行主餘刻與 刻的不意圖。 第7圖係為本創作之蚀刻浸泡槽之内槽進行蝕刻液注液,以對基底進行蝕 刻的示意圖。 鲁第8圖係為本創作之蚀刻浸泡槽之内槽内的蝕刻液進行循環的示意圖。 ,第9圖係為第8圖之管路運作示意圖。 第1〇圖係為終止對基板進行蝕刻後,本創作之蚀刻浸泡槽進行内槽内蝕刻 液排出的示意圖。 第11圖係為當内槽内蝕刻液之液面低於基板底部時,傳送裝置輸送基板至 刮刀進行初步基板表面蝕刻液移除的示意圖。 第12圖係為當進行第11圖之初步基板表面蝕刻液移除後,利用傳送裝置 輸送基板至液切風刀進行進一步蚀刻液移除。 【主要元件符號說明】 10基板 M344701 12蝕刻液 14蝕刻浸泡槽 16出口閘門處 18液切風刀 20蝕刻浸泡槽 22外槽 • 24入口閘門 .26出口閘門 28排液孔 φ 30喷灑裝置 32内槽 34注液/排液孔 36傳動裝置 38刮刀 40液切風刀 42集液槽 44喷灑管路 46供液加壓管路 參48供液壓力調節管路 .50供液控制自動閥 52壓力調節閥門 54自動控制閥 56注液/排液管路 57供液控制閥 58集液管路 60三通閥 62稀釋回水端 64槽體回水控制閥 M344701 66基板 68加壓幫浦The μ filaments are finely pulverized, and a necessary and quite important process is required for the fabrication of semiconductor components. However, there are two main types of residual techniques that are widely used in semiconductor processes, such as the use of chemical reactions (wetetG_); the other is the physical action of Dry Etching. Wet type* is the earliest used engraving technique. It is achieved by using the pattern of the layer to be patterned and the non-directionality of the specific solution (four) scale. The solution concentration, side coffee, and side pattern are often used as control surfaces. An important mechanism for the side reaction. Please - and refer to Figure 1(4) and the first! (b) is a schematic view of a conventional wet-side ___ termination after the etched layer on the substrate. As shown in the figure, the conventional wet etching process generally adopts a two-stage etching mode, that is, the main etching (mam-etching) is matched with the taper angle of the over-side (〇vebu etc_) (ta_^ for comparison). The silk-coffee shape, the cake_covering side _ upper layer can have better turning ability, and the general over-step step is immersed in the side liquid 12 in the side liquid 12, as shown in the first (4) thief, Reuse the substrate 12 = osculation of the etchant to increase the lateral side rate to achieve the purpose of modifying the cone angle. However, in the current side soak tank design, please refer to the figure (8), the machine At the end of the process, when the substrate 10 is removed from the etching bath 14 , a large amount of the etching liquid 12 is accompanied by the substrate 10 overflowing from the exit gate 16 to the outer groove, and the area of the substrate 1 is increasing. The lower 'will cause the air gurtain 18 to fail to effectively scrape the side liquid, and the side liquid 12 will be carried along the substrate 1 to the next process step, such as the water washing process, and the 5 M344701 will be depleted. Therefore, 'this creation provides a new look for the shortcomings of the silver engraving tank mentioned above. The etching immersion tank structure is improved to solve the existing defects. [New content] The main purpose of the creation is to provide an improved etching bathing tank structure, which is provided with an automatic control unit on the liquid supply pressure and regulating pipeline to etch. When it is terminated, the pressure regulating valve is activated so that the pump device does not need to stop running, and the pump can immediately stabilize the output when returning to the inner tank to reduce the etching yield caused by the unsteady output of the pump. Another object of the present invention is to provide an improvement of the structure of the surname groove, which can effectively prevent the residual liquid from overflowing from the exit gate to the outer groove when the substrate is sent out, so as to reduce the consumption of the etching liquid. A further object is to provide an improved etching bathing tank structure, which further includes a scraper 'to perform preliminary cleaning of the silver engraving liquid on the surface of the substrate. Another object of the present invention is to provide an improved structure of the surging tank, which can effectively save The unnecessary waste caused by the inability to effectively remove the etching liquid on the surface of the substrate. Another object of the present invention is to provide The etching etching bath structure is improved, which can effectively reduce the unstable output of the pump and improve the yield of the entire etching process. To achieve the above purpose, the present invention provides an improved structure of the surging tank, which includes an outer groove. , having a plurality of spraying devices and an outer tank discharging hole at the bottom; an inner groove in the outer groove ♦ having at least one inner groove injecting/discharging hole at the bottom; The inside and outside of the tank and the transport device in the inner tank are used for transporting the substrate; - the liquid collecting body for accommodating the side liquid, and the liquid supply pressurizing line for pressurizing the etching liquid, which utilizes one The pump is pressurized; a spraying official road has one end connected to the spraying device, and the other end connected to the liquid supply pressurized line and a hydraulic circuit regulating line having a pressure regulating valve; / draining line, one to the trough = / drain hole, the other end is connected to the liquid supply pressurized line and the hydraulic line regulating line; a liquid collecting official road, one end of which is connected to the outer trough a liquid hole, and the other end is connected to the liquid injection/discharge line and the sump; - disposed in the hydraulic pressure passage for controlling the automatic adjustment of the feed path f, based upon its execution is stopped to when the injection groove, starting the pressure control valve, so that the pump does not stop the operation. In order to give your review board members a better understanding of and understanding of the structural features and efficacies of this creation, please refer to the preferred embodiment diagram and the detailed description to explain the following: [Embodiment] The creation is due to the structure of the etching immersion tank of the prior art, in the stage of removing the substrate from the #刻soaking tank at the end of the remainder, a large amount of etching liquid is accompanied by the overflow of the substrate from the outlet of the outlet gate to the outer groove, resulting in The aircurtain can't effectively scrape the etchant, so that the etchant can be carried to the next process step, such as the water washing process, and the unnecessary loss is derived. • Therefore, the spirit of the creation is wet etching. At the end of the process, the appropriate etchant water level is adjusted. • The water surface of the liquid is lowered below the substrate to effectively prevent the etchant from being carried along the substrate to the next process. Moreover, after the improved design is not avoided, the unstable operation of the pump operation is faced with repeated activation. In addition, an automatic control unit is added to the pressure regulating pipeline to form a bypass line, so that the pump does not need to be installed. Stop working. The following description is directed to the specific embodiments of the present invention, but it should be understood that the following description is only to make the creation of the technology clearer and understand the present invention, and the specific embodiment is not Come as a limitation of the scope of the rights of this creation. Please refer to FIG. 2, FIG. 3 and FIG. 4 together, which are schematic diagrams of the overall structure of the etched bath after the improvement, the structure diagram of the part of the etching bath; and the etching liquid supply of the etching bath Schematic diagram of the design of the return water pipeline. Please refer to FIG. 2 and FIG. 3 together. As shown in the figure, the etching bath 2 of the present invention includes an outer groove 22, and each of the two corresponding sides has an inlet/outlet gate for the substrate to be removed. 24, _ 26, the bottom of the outer tank 22 has at least one row of liquid holes 28; a spraying device located above the outer tank 22. 30' spray device 30 can be arranged parallel or perpendicular to the substrate in and out direction; The inner groove 32 and the inner groove 32 are a box body, and each end of the box body has an inlet and outlet opening (not shown), and the opening portion has the same gate as the outer groove (not shown). When the soaking side is used to prevent the outflow of the money engraving, the bottom of the inner tank 32 has at least two liquid injecting/discharging holes 34 extending through the outer tank 22, which are used for the removal and injection of the residual liquid; a set of transmissions 36, Disposed in the inner groove 22 and the inner groove 32, the substrate is transported to perform the immersion remnant and the start/stop wet surface process; a scraper 38' located at the inlet/outlet gate is used for initially scraping the substrate surface Most of the side liquid, the scraper 38 has a safe distance from the surface of the substrate after the side to avoid scratching the surface of the substrate The electrical path 7 M344701 'and located within the outer tub 22 and the operating fluid in the scraper blade 38 forces air knife 40 cut the surface of the substrate was _ step, to remove a substantial increase in the rate of fluid than engraved. Poverty connection, the pipeline configuration instructions after the improvement of the infusion tank. Please refer to Fig. 2 and Fig. 4 as shown in Fig. 1. In the f road configuration, there is a sump 42. There are three wires on the wire groove 42. The pipes are connected to each other for pressure _ 68. The control shed 54 and the three-way 阙6〇; one Weig road 44' has one end connected to the spraying device 3〇' and the other end first passes through the liquid supply control and then continues to form two scales, which are connected to the The supply pressure line 46 and the supply pressure: the adjustment line 48', the supply pressure line 46 is connected to the above-mentioned addition 68, and is attached to the spray line 44 connected to the nozzle unit. The liquid supply control automatic valve 5 〇 can control the spraying device 3 〇 φ 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液The pressure adjustment _ door 52 is followed by an automatic control program 54, and then the automatic control valve 54 - end is connected to the sump 42; continued, an injection/discharge line 56, one end of which is connected to two The injection/discharge hole 34' and the other-end connection form two passages, which are respectively j to-adhesive paste 57 and sputum backwater_from _64, and the towel for the miscellaneous 57 =,,, only Supply liquid plus pipe 46 The liquid supply pressure regulating line 48, the eye water control automatic valve 64 is connected to the three-way 6G W and the ... wire line 58, the end boat is connected to the drain hole 28 at the bottom of the outer tank 22, and the other end is connected. A three-way valve 6 形成 is formed under three passages, the first passage is connected to the liquid injection/discharge line 56, the second passage is connected to the sump 42 , and the third passage is connected to # to - diluted back to the water The end 62, wherein the liquid collecting pipe is connected to the liquid injecting, and the tank returning water control automatic valve 64 is further installed on the pipe of the liquid discharging pipe %. • Continuation, please - and refer to Figures 5 to 9, which are the relevant steps when the remaining steps are performed. As shown in the figure, a substrate 66 is first fed into the outer tank 22 from the inlet closing door 24 via the conveying device 36; the spraying device 30 is successively activated to perform a main etching process on the substrate 66. During the main etching process step, the entrance gate 24, the outlet gate 26, and the inner slot of the inner slot are closed to prevent the rhyme from overflowing, and the pipeline end is activated by the liquid supply control, and the liquid supply control is automatic. The valve 50 is in an open state at this time, and the etching liquid of the liquid collecting tank 42 is pressurized by a pressurized pump _, and then the working fluid plus fresh road 46 is difficult to be injected into the pipeline. The substrate is subjected to a spray main etch. 8 M344701 After the main side, the step of over-etching the immersion is performed, as shown in Figure 7. When this step is performed, the 'f road end system starts the automatic valve 57, and at this time, the liquid supply control automatic valve 5 is closed. The spraying device 30 stops spraying, and the pressurized shackle 68 sets the side liquid of the sump 42. The pressurized fluid supply line 46 is pressurized to add a new fluid/weiwei 56 to cause the inner tank to initially inject the residual liquid to perform a residual step on the substrate 66. For another example, the 8th ride shows that the female quantity of Na Na has been Gao Cong of Da Congnu, in order to do • add __ move, and the side of the silk _ amount, because the scale sister liquid lin lin 镰 镰 镰 ^ ^ ^ — — 至The passage of the tank 42 is for recovering the side liquid. At this time, the tank return water control valve 64 is in a closed state, so that the inner tank 32 is "continuously supplying the side liquid" to hold the entire side _ disturbing loop, such as ^ φ 9 Shown. $ Again, please refer to the figure 10~12, the steps of the steps after the completion of the system side steps. First, as shown in Fig. 10, when the side steps are completed, the liquid supply action of the residual liquid is terminated. That is, the liquid supply control automatic valve 57 is closed. The tank return water control valve 64 is activated (the amount of the etching liquid in the inner tank 32 is controlled by the tank backwater control valve 64, and the control mode can be controlled by the timing and liquid level sensor, and the control factor is岐 'Therefore, it can be compiled (4) _ 32 姓 ^ 量 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' . In the above steps, the automatic control valve 54 on the supply pressure regulating line 48 is simultaneously activated, as a riding line, and the running cake is stopped. Miscellaneous can be provided in response (4) • Provides a stable output immediately. When the liquid level of the liquid in the tank has fallen below the substrate, as shown in FIG. 11, the substrate 66 is transported by the transmission 36 to the scraper 38 located in front of the exit gate 26, and the surface of the substrate 66 is first scraped off by the scraper 38. The etchant is subjected to a preliminary etchant removal. The continuation is as shown in Fig. 12, and the etching liquid is again removed by the liquid air knife 40 to effectively prevent the etching liquid from being carried along the substrate 66 to the next process step, such as the water washing process section, to derive unnecessary wear and tear. The present invention reduces the etching liquid to the bottom of the substrate at the end of the process, so as to effectively prevent the residual liquid from overflowing from the exit gate to the outer groove when the substrate is sent out, and further, setting a two-stage residual liquid removing step 'The amount of engraved liquid on the surface of the substrate has been reduced. In addition, this creation is provided with an automatic control valve on the hydraulic line 9 M344701 regulating line to activate the pressure regulating valve when the inner tank performs the stop injection, forming a bypass line so that the pump does not need to stop running. So, when replying to ^, the pump can immediately provide a stable output. The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention, so that the shapes, structures, features, and spirits described in the scope of the present application are equally Variations and modifications are intended to be included within the scope of the invention. [Simple description of the drawings] • Fig. 1 (a) is a schematic view showing the immersion etching of a substrate. Fig. 1(b) is a schematic view showing the etching liquid removal of a substrate. The second picture of Chun is a three-dimensional diagram of the creation. Figure 3 is a schematic diagram of the components of the soaking tank portion of the creation. Figure 4 is a schematic diagram of the configuration of the silver engraved liquid pipeline. The 苐5 image is a schematic diagram of the substrate being transported into the outer trench by the actuator of the etched bath structure of the present invention for etching. Figure 6 is a schematic diagram of the substrate being transported to the groove outside the soaking tank of the original creation, waiting for the main remnant and engraving. Fig. 7 is a schematic view showing the etching of the substrate by etching the etching solution in the groove of the etching bath of the present invention. Lu 8 is a schematic diagram of the circulation of the etching solution in the groove of the etching bath of the present invention. Figure 9 is a schematic diagram of the operation of the pipeline in Figure 8. The first diagram is a schematic diagram of the etching bath in the inner trench after the etching of the substrate is terminated. Figure 11 is a schematic view showing the transfer device transporting the substrate to the doctor blade to remove the initial substrate surface etchant when the liquid level of the etchant in the inner tank is lower than the bottom of the substrate. Figure 12 is a diagram showing the removal of the etchant from the initial substrate surface after the removal of the etchant from the initial substrate surface of Figure 11 by the transfer device to the liquid air knife. [Main component symbol description] 10 substrate M344701 12 etching liquid 14 etching soaking tank 16 outlet gate 18 liquid air cutter 20 etching soaking tank 22 outer tank • 24 inlet gate. 26 outlet gate 28 drain hole φ 30 spraying device 32 Inner tank 34 injection/discharge hole 36 transmission device 38 scraper 40 liquid air cutter 42 liquid collection tank 44 spray line 46 supply liquid pressure pipeline reference 48 supply pressure regulating pipeline. 50 liquid supply control automatic valve 52 pressure regulating valve 54 automatic control valve 56 injection / drainage line 57 supply control valve 58 liquid collection line 60 three-way valve 62 dilution back to the water end 64 tank back water control valve M344701 66 substrate 68 pressure pump

Claims (1)

補无! C---- Μ I· | I M344701 九、申請專利範圍 1· 一種儀刻浸泡槽結構改良,其包含有: 一外槽,為一外殼體,内置有一内槽; 一内槽,其係位於該外槽内; 一傳輸裝置,其係設於該外槽内,以進行基板的運輸; 一集液槽,其係用以容置蝕刻液; 一管路,其係連結該内或外槽與該集液槽,用以順利輸送触刻液於槽内; ' 一調節閥,其係裝設於該管路上以控制蝕刻液輸送方向與流量;以及 一幫浦,裝設於該管路上,以使餘刻液順利輸送; 修 其特徵在於一自動控制單元,其係設置於該蝕刻液輸送的該管路上,以 當該内槽執行停止注液時,啟動該調節閥,以使該幫浦無須停止運轉。 2·如申請專利範圍第1項所述之餘刻浸泡槽結構改良,其中該浸泡槽上 包含有: 一喷灑裝置,其係裝設於該外槽内上方; 一供液加壓管路,其一端係連接至該喷灑裝置,另一端係連接至槽内該 管路至該内或外槽體與該集液槽;以及 一供液控制自動閥與壓力調節閥門,其連結於該管路上,以調節控制蝕 ^ 刻液流量。 3.如申印專利範圍第2項所述之餘刻浸泡槽結構改良,其中該管路包括 有·· 一喷灑管路; 一供液壓力調節管路,一端接續該喷灑管路,另一端接續該集液槽; 一供液加壓管路一端接續該喷灑管路,另一端接續該供液壓力調節管路 及該集液槽; 一注液/排液管路,一端接續該外槽,另一端接續該供液壓力調節管路 及該供液加壓管路;以及 一集液管路,一端接續外槽,另一端接續該注液/排液管路匯至該集液 13 M344701 槽。 丨 補无γ 4·如申請專利範圍第1項所述之蚀刻浸泡槽結構改良,其中該外槽兩側 具有一入、出口閘門口,以供基板入/出該蝕刻浸泡槽。 5.如申請專利範圍第4項所述之钱刻浸泡槽結構改良,其中該出口閘門 口處增設有一刮刀,以對基板表面的蝕刻液進行初步清除。 6·如申請專利範圍第4項或第5項所述之蝕刻浸泡槽結構改良,其中該 外槽位於該出口閘門口處設有一液切風刀,以對基板表面之蝕刻液進行 清除。 7·如申請專利範圍第3項所述之钮刻浸泡槽結構改良,其中在對基板進 % 行钱刻的步驟時,係同時啟動該喷灑管路與該注液/排液管路的注液功 能’以由該噴灑裝置與該注液/排液孔分別喷灑與注入餘刻液,來對基 板同時進行主蝕刻與過韻刻。 8·如申請專利範圍第7項所述之蚀刻浸泡槽結構改良,其中在終止對基 板進行姓刻的步驟時,係關閉噴灑管路與啟動該注液/排液管路的排液 功能’以使内槽内的蝕刻液面降至基板下方。 9·如申請專利範圍第3項所述之餘刻浸泡槽結構改良,其中該噴灑管路 上設有一調節閥,其為第一供液控制自動閥。 如申請專利範圍第3項所述之蚀刻浸泡槽結構改良,其中該注液/排液 * 管路上設有調節閥,其為一第二供液控制自動闕。 —11·如申請專利範圍第3項所述之餘刻浸泡槽結構改良,其中該集液管路 與該注液/排液管路間的管路上更裝設有一槽體回水控制閥。 12.如申請專利範圍第3項所述之姓刻浸泡槽結構改良,其中該集液管路 之另一端除連接至至該注液/排液管路與該集液槽外,更連接至一稀釋 回水端。 13·如申請專利範圍第11項所述之餘刻浸泡槽結構改良,·其中該集液管路 係利用二通閥’以達成連接至該注液/排液管路、該集液槽與該稀釋 回水端。 今種餘刻浸泡槽結構改良’其在蚀刻終止時係停止触刻液的注入,該银 M344701 刻浸泡槽結構包含有:C---- Μ I· | I M344701 IX. Patent Application Scope 1. An improved immersion tank structure includes: an outer tank, an outer casing with an inner groove; an inner groove The system is located in the outer tank; a transport device is disposed in the outer tank for transporting the substrate; a liquid collection tank for accommodating the etching liquid; and a pipeline connecting the Inner or outer tank and the liquid collecting tank for smoothly conveying the etchant in the tank; 'a regulating valve installed on the pipeline to control the direction and flow of the etchant; and a pump The pipeline is arranged to smoothly transport the residual liquid; and the automatic control unit is disposed on the pipeline for conveying the etching liquid to activate the regulating valve when the inner tank performs the stop injection. So that the pump does not have to stop running. 2. The improvement of the remaining immersion tank structure as described in claim 1, wherein the immersion tank comprises: a spraying device installed above the outer tank; a liquid supply pressurized pipeline One end is connected to the spraying device, the other end is connected to the pipe in the tank to the inner or outer tank body and the liquid collecting tank; and a liquid supply control automatic valve and a pressure regulating valve are connected thereto In the pipeline, to adjust the control etch liquid flow. 3. The structure of the remaining immersion tank as described in item 2 of the scope of the patent application, wherein the pipeline comprises a spray line; a supply pressure regulating line, one end of which is connected to the spray line, The other end is connected to the liquid collecting tank; one end of the liquid supply pressurized line is connected to the spraying line, the other end is connected to the liquid supply pressure regulating line and the liquid collecting tank; an injecting/discharging line is connected at one end The outer tank is connected to the liquid supply pressure regulating pipeline and the liquid supply pressurized pipeline; and a liquid collecting pipeline, one end is connected to the outer tank, and the other end is connected to the liquid injecting/discharging pipeline to the set Liquid 13 M344701 tank.补 Complementing γ 4 · The etch bath structure is improved as described in claim 1, wherein the outer groove has an inlet and an outlet gate on both sides thereof for the substrate to enter/exit the etching bath. 5. The structure of the money-immersing tank as described in claim 4, wherein a scraper is added to the outlet gate to perform preliminary cleaning of the etching liquid on the surface of the substrate. 6. The etch bath structure according to claim 4 or 5, wherein the outer tank is provided with a liquid air cutter at the exit gate to remove the etching liquid on the surface of the substrate. 7. The improvement of the button immersion tank structure as described in claim 3, wherein in the step of engraving the substrate, the spray line and the liquid injection/discharge line are simultaneously activated. The liquid injection function 'sends and injects the residual liquid separately from the spraying device and the liquid injection/discharge hole to simultaneously perform main etching and over-engraving on the substrate. 8. The improvement of the etching bathing tank structure as described in claim 7 of the patent application, wherein the step of enclosing the substrate and the step of initiating the liquid discharging function of the liquid injecting/discharging line are performed. So that the etching liquid level in the inner tank is lowered below the substrate. 9. The improved immersion tank structure as described in claim 3, wherein the spray line is provided with a regulating valve which is a first liquid supply control automatic valve. The immersion tank structure is improved as described in claim 3, wherein the liquid injection/discharge* line is provided with a regulating valve, which is a second liquid supply control automatic enthalpy. —11· If the structure of the remaining immersion tank is improved as described in item 3 of the patent application scope, a tank return water control valve is further disposed on the pipeline between the liquid collection pipeline and the liquid injection/discharge pipeline. 12. The improvement of the surname tank structure according to item 3 of the patent application scope, wherein the other end of the liquid collection pipeline is connected to the liquid injection/discharge pipeline and the liquid collection tank, and is further connected to Dilute back to the water end. 13. The improved immersion tank structure as described in claim 11 of the patent application, wherein the sump line utilizes a two-way valve to achieve connection to the liquid injection/discharge line, the sump and The dilution is returned to the water end. The present invention has improved the structure of the immersion tank, which stops the injection of the etchant at the end of the etching. The silver M344701 immersion tank structure comprises: 一钱刻槽; 一集液槽,其係用以容置蝕刻液; 一供液加壓管路,其係用以加壓蝕刻液,該供液加壓管路係利用一幫浦 進行加壓; 一供液壓力調節管路,其係用以調節該供液加壓管路内的壓力,該供液 壓力調節管路上裝設有一壓力調節閥; • 一注液管路,其一端係連接至該供液加壓管路,另一端連接至該蝕刻 槽’以對蝕刻槽進行喷灑與注液; φ 一集液管路,其係收集該蝕刻槽内之餘刻液並注入該集液槽;以及 一自動控制單元,其係設置於該供液壓路調節管路上,以當蝕刻終止 時’啟動該壓力調節閥,以形成一旁接通路,使該幫浦無須停止運轉。 15·如申請專利範圍第14項所述之姓刻浸泡槽結構改良,其中該蝕刻槽更 包含有: 一外槽,其上具有數個連接至該注液管路的喷灑裝置以及一位於底部的 外槽排液孔,其係連接至該集液管路; 一内槽’其係位於該外槽内,該内槽底部具有至少一内槽注液孔與一内 槽排液孔,該内槽注液孔係連接至該注液管路,而内槽排液孔係連接 # 至該集液管路;以及 一傳輸裝置,其係分設於該外槽内、外與該内槽内,以進行基板的運輸。 16_如申請專利範圍第15項所述之姓刻浸泡槽結構改良,其中該外槽兩侧 具有一入、出口閘門口,以供基板入/出該蝕刻浸泡槽。 17·如申請專利範圍第16項所述之蚀刻浸泡槽結構改良,其中該出口閘門 口處增設有一刮刀,以對基板表面的蝕刻液進行初步清除。 18_如申請專利範圍第16項或第17項所述之蝕刻浸泡槽結構改良,其中 該外槽位於該出口閘門口處設有一液切風刀,以對基板表面之姓刻液進 行清除。 19_如申請專利範圍第15項所述之蚀刻浸泡槽結構改良,其中在對基板進 15 M344701 ”年费 / 夺ff ___補无I 行蝕刻的步驟時,係啟動注液管路來同時透過該噴灑裝置進行喷福「吳1" 該内槽進行注入蝕刻液,以對基板同時進行主蝕刻與過餘刻。 1 20.如申請專利範圍第19項所述之蚀刻浸泡槽結構改良,其中在終止對基 板進行蝕刻的步驟時,係關閉注液管路並使該内槽内的蝕刻液面降至基 板下方。a money groove; a liquid tank for accommodating the etching liquid; a liquid supply pressure line for pressurizing the etching liquid, the liquid supply pressurized line is added by a pump a supply pressure regulating line for adjusting the pressure in the supply pressure line, the pressure regulating line is provided with a pressure regulating valve; • a liquid filling line, one end of which is Connected to the liquid supply pressurization line, the other end is connected to the etching tank 'to spray and inject the etching tank; φ a liquid collecting pipeline, which collects the residual liquid in the etching tank and injects the same a sump; and an automatic control unit disposed on the hydraulic circuit regulating line to 'activate the pressure regulating valve when the etching is terminated to form a bypass passage so that the pump does not need to be stopped. 15. The improved immersion tank structure as described in claim 14 wherein the etch tank further comprises: an outer tank having a plurality of spray devices connected to the liquid injection line and a a bottom tank outer drain hole connected to the liquid collecting pipe; an inner groove 'located in the outer groove, the inner groove bottom having at least one inner groove liquid injection hole and one inner groove liquid discharge hole, The inner tank liquid injection hole is connected to the liquid injection line, and the inner tank liquid discharge hole is connected to the liquid collection line; and a transmission device is disposed inside, outside and inside the outer tank Inside the tank to transport the substrate. 16_ The improved immersion tank structure as described in claim 15 wherein the outer tank has an inlet and outlet gates on both sides thereof for the substrate to enter/exit the etching bath. 17. The etch bath structure is improved as described in claim 16, wherein a scraper is added to the exit gate to perform preliminary cleaning of the etching liquid on the surface of the substrate. 18_ The improvement of the etching bathing tank structure as described in claim 16 or 17, wherein the outer tank is provided with a liquid air cutter at the exit gate to remove the engraving of the surname on the surface of the substrate. 19_ The improvement of the etch bathing tank structure as described in claim 15 of the patent application, wherein the step of injecting the liquid in the step of 15 M344701 "yearly fee / ff ___ fill in the substrate is started simultaneously The spraying device is used to spray the "Wu 1"; the inner groove is filled with an etching solution to simultaneously perform main etching and excess etching on the substrate. 1 20. The etching bathing tank structure improvement according to claim 19 of the patent application scope is Wherein the step of etching the substrate is terminated, the liquid injection line is closed and the etching liquid level in the inner groove is lowered below the substrate.
TW97206881U 2008-04-22 2008-04-22 Etching tank structure improvement TWM344701U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611473B (en) * 2016-10-11 2018-01-11 盟立自動化股份有限公司 Liquid level control system and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611473B (en) * 2016-10-11 2018-01-11 盟立自動化股份有限公司 Liquid level control system and method

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