CN207993803U - Device for chemically treating semiconductor substrates with surface structures formed by sawing - Google Patents
Device for chemically treating semiconductor substrates with surface structures formed by sawing Download PDFInfo
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- CN207993803U CN207993803U CN201721488800.8U CN201721488800U CN207993803U CN 207993803 U CN207993803 U CN 207993803U CN 201721488800 U CN201721488800 U CN 201721488800U CN 207993803 U CN207993803 U CN 207993803U
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- liquid
- cleaning
- surface texture
- semiconductor substrate
- textured surface
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 142
- 239000000758 substrate Substances 0.000 title claims abstract description 138
- 239000007788 liquid Substances 0.000 claims abstract description 247
- 238000004140 cleaning Methods 0.000 claims abstract description 202
- 238000000034 method Methods 0.000 claims abstract description 165
- 238000003486 chemical etching Methods 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000007921 spray Substances 0.000 claims description 119
- 238000011010 flushing procedure Methods 0.000 claims description 65
- 238000005516 engineering process Methods 0.000 claims description 52
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 239000012153 distilled water Substances 0.000 claims description 15
- 238000002386 leaching Methods 0.000 claims description 14
- 230000033228 biological regulation Effects 0.000 claims description 4
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 description 38
- 229910021645 metal ion Inorganic materials 0.000 description 33
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 32
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 31
- 238000003860 storage Methods 0.000 description 31
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 20
- 238000010276 construction Methods 0.000 description 19
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 18
- 239000007864 aqueous solution Substances 0.000 description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 17
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 16
- 238000012805 post-processing Methods 0.000 description 15
- 230000009182 swimming Effects 0.000 description 14
- 238000000465 moulding Methods 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 10
- 210000004027 cell Anatomy 0.000 description 9
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 8
- 229910001961 silver nitrate Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 238000004080 punching Methods 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000002082 metal nanoparticle Substances 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000007704 wet chemistry method Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 235000009421 Myristica fragrans Nutrition 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910021418 black silicon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000004087 circulation Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000001115 mace Substances 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012737 fresh medium Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229930002839 ionone Natural products 0.000 description 1
- 150000002499 ionone derivatives Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- -1 metals Ion Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- VBYZSBGMSZOOAP-UHFFFAOYSA-N molecular hydrogen hydrate Chemical compound O.[H][H] VBYZSBGMSZOOAP-UHFFFAOYSA-N 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a saw-formed surface structure (S) for chemical treatment0) The apparatus (1) for semiconductor substrates (2) comprises a first process tank (6) with a first process liquid (10). The first process liquid (10) is suitable for removing both sawn and formed from a semiconductor meltSurface structure of (S)0) It is also suitable for producing textured surface structures (S) by metal-assisted chemical etching1). The textured surface structure is then thoroughly cleaned (S) by means of a cleaning device (7)1). The textured surface structure is subsequently treated in a second process tank (8) by means of a second process liquid (18) (S)1). Post-treated textured surface structure (S)2) The manufacture of solar cells with very low reflection losses and high efficiency is achieved.
Description
Technical field
The utility model is related to it is a kind of for be chemically treated carry formed by sawing or by semiconductor melt it is molding
The device and method of the semiconductor substrate of surface texture.By sawing formed surface texture include saw damage, saw damage especially by
Buddha's warrior attendant wire saw process causes.
Background technology
The efficiency of solar cell depends on reflection loss.In order to reflection loss minimum and optimization efficiency, manufacture band
There is the semiconductor substrate of textured surface texture.If silicon substrate passes through particularly effective method to this semiconductor substrate in other words
Processing, then it is for example referred to as " black silicon (English：Black Silicon)”.
Method for manufacturing the semiconductor substrate for carrying textured surface texture is, for example, metal Assisted Chemical Etching Process
Method (english abbreviation：MACE, i.e. Metal Assisted Chemical Etching).Metal Assisted Chemical Etching Process method for example exists
It is known in patent document WO2014/166256A1.The disadvantage is that in metal Assisted Chemical Etching Process to generate textured surface
Must be bothersome to semiconductor substrate before structure pre-process, damage is sawed by the surface texture that sawing is formed in other words to remove
Wound, the saw damage is caused by scroll saw before.This is correspondingly also applied for by Direct-Wafer (direct silicon chip)
Technology directly by semiconductor melt manufacture and its surface texture by the molding semiconductor of semiconductor melt substrate.
Utility model content
The technical problem to be solved by the present invention is to provide a kind of equipment, be used to be chemically treated with by sawing
Semiconductor substrate being formed or by the molding surface texture of semiconductor melt, the equipment can be with simple and efficient side
Formula removes being formed by sawing or is used to make by the molding surface texture of semiconductor melt and the textured surface texture of generation
It makes and carries extremely low reflection loss and efficient solar cell.The equipment can especially be realized in a manner of simple and efficient
It removes being generated by Buddha's warrior attendant scroll saw or by the molding surface texture of semiconductor melt, and generates effective texture and have in other words
The textured surface texture of effect.
Above-mentioned technical problem is by the equipment solution according to the utility model, i.e., a kind of for being chemically treated with by sawing
The equipment of the semiconductor substrate of the surface texture of formation comprising：The first technology groove with the first process liquid, described
One process liquid is textured for removing the surface texture formed by sawing and for being generated by metal Assisted Chemical Etching Process
Surface texture carries the second process liquor for implementing clean cleaning device at least once to the textured surface texture
Second technology groove of body, second process liquid be used for by chemical etching for the textured surface texture that cleaned into
Row post-processing.According to the utility model it is found that if the first technology groove includes the first process liquid, the first process liquid is both suitable for going
Except being formed by sawing or by the molding surface texture of semiconductor melt, it is also suitable for through metal Assisted Chemical Etching Process in other words
Wet chemical etch generates textured surface texture, then can it is simpler and more effectively realize have relatively low reflection loss and
Efficient textured surface structure.The surface that saw damage is formed by sawing in other words is thus removed by the first process liquid
Structure generates textured surface knot by the molding surface texture of semiconductor melt, and by metal Assisted Chemical Etching Process
Structure.This is especially in other words only by the first process liquid, i.e. in unique process pool technique in other words only in the first technology groove
It is carried out in step.It is impaired by sawing in other words that the surface texture formed by sawing is especially removed by the first process liquid
Surface texture is due to Buddha's warrior attendant wire saw process (English：DWS, i.e. Diamant Wire Saw) caused by.Included in the first work
Metal ion in skill liquid generates the hole in nanometer range on the surface of a semiconductor substrate, to constitute textured surface
Structure.The hole preferably has in 50nm to the diameter between 500nm.Then effectively and reliably by cleaning device
Metal ion is removed to textured surface texture, on the one hand to terminate metal Assisted Chemical Etching Process and not continue to carry out
Metal assists texturing, and efficiency caused by the metal ion retained on the other hand is avoided to reduce.Pass through in the second technology groove
The subsequent post-processing of two process liquids is used to reduce the surface of the textured surface texture cleaned, and for generating most
The surface texture of optimization.The post-processing is carried out by the wet chemical etch in other words of chemistry, however the post-processing is not gold
Belong to assist type.Second process liquid can be alkalinity or acidity.Second process liquid is preferably acid.Second technique
Liquid can include additive.Second process liquid is especially free of hydrogen peroxide.The equipment is preferred for being chemically treated polycrystalline
Semiconductor substrate.Semiconductor substrate especially silicon substrate.
Term " first " technology groove and " second " technology groove are only used for difference technology groove, and being not construed as limiting property understands in addition.Especially
It can before technology groove, between and/or arrange other slot, such as technology groove, clean tank and/or flushed channels later.Phase
Ying Di, term " first " process liquid and " second " process liquid are only used for difference process liquid, and being not construed as limiting property understands in addition.
The equipment preferably has at least one conveying device for conveying semiconductor substrate along conveying direction.It is described
At least one conveying device at least extends up to cleaning device from first technology groove, preferably at least from first technology groove
The second technology groove is extended up to, and especially extends up to and is arranged in after second technology groove from first technology groove
Cleaning device.It is discontinuous or continuous along conveying direction that semiconductor substrate may be implemented at least one conveying device
Horizontal conveying.In the first embodiment, the equipment have conveying device, conveying device semiconductor substrate discontinuously or
Person continuously and flatly conveys the cleaning device after being arranged in second technology groove from first technology groove.
In a second embodiment, there are two conveying devices for equipment tool, wherein the first conveying device semiconductor substrate discontinuously
Or continuously and flatly convey from first technology groove sanitizer cartridge after being arranged in first technology groove
It sets, and the second conveying device is discontinuously or continuously and flatly defeated from second technology groove semiconductor substrate
It send at least up to the cleaning device being arranged in after second technology groove.Between conveying device, semiconductor substrate such as hand
Dynamic ground is conveyed by handling device.
According to a kind of equipment of improved design project ensure that it is simple and efficient remove it is being formed by sawing or by half
The surface texture and the textured surface texture of generation of conductor melt forming.I.e. described first process liquid includes hydrogen fluoride, nitre
Acid and metal ion, especially silver ion.First process liquid especially aqueous solution, it includes hydrogen fluoride, nitric acid and metals
Ion, especially silver ion.The aqueous solution especially has distilled water as matrix.It is preferably comprised in water in the first process liquid
Close the silver ion of silver ion form, wherein aqueous solution is added in silver preferably in the form of silver nitrate.Metal ion is in the first process liquor
It works as catalyst in body and locally accelerates wet chemical etch.Exist on the surface of a semiconductor substrate with this
Metal ion or metallic particles region in constitute etching hole etch hole in other words.The summation in etching hole constitutes semiconductor lining
The textured surface texture at bottom.
According to a kind of equipment of improved design project ensure that in a manner of simple and efficient removal formed by sawing or
Person is by the molding surface texture of semiconductor melt and generates textured surface texture.First process liquid include 3% to
21% hydrogen fluoride, 12% to 20% nitric acid and 0.001% to 0.05% silver nitrate.First process liquid is especially
Aqueous solution with hydrogen fluoride, hydrogen hydrate and silver nitrate.The aqueous solution preferably has distilled water as matrix.Preferably,
First process liquid includes 12% to 20% hydrogen fluoride HF, 15% to 20% nitric acid HNO3With 0.001% to
0.015% silver nitrate AgNO3, especially 15% hydrogen fluoride HF, 20% nitric acid HNO3With 0.005% silver nitrate AgNO3。
Above-mentioned data are mass percents.
According to a kind of equipment of improved design project ensure that it is simple and efficient remove it is being formed by sawing or by half
The surface texture and the textured surface texture of generation of conductor melt forming.First process liquid includes less than 5%, especially
Less than 1% and in particular 0% hydrogen peroxide.Hydrogen peroxide influences desired metal Assisted Chemical Etching Process.First work
Skill liquid is preferably free of hydrogen peroxide.With this optimize technique duration and technology stability, and simplify the knot of the equipment
Structure, because the operation for the equipment needs for example less process chemistries.The data are mass percents.
According to a kind of equipment of improved design project ensure that it is simple and efficient remove it is being formed by sawing or by half
The surface texture and the textured surface texture of generation of conductor melt forming.First process liquid has temperature T1, wherein：
10℃≤T1≤ 45 DEG C, especially 20 DEG C≤T1≤35℃.Pass through the temperature T1So that desired metal Assisted Chemical Etching Process and
Process time optimizes.
High efficiency is ensured according to a kind of equipment of improved design project.The cleaning device has at least one with clear
The clean tank of clean liquid, the cleaning liquid include nitric acid, especially 5% to 68% nitric acid and especially 5% to 67% nitre
Acid, wherein the cleaning liquid especially has temperature TR, to this regulation：15℃≤TR≤ 65 DEG C, especially 40 DEG C≤TR≤50℃。
After at least one clean tank is arranged in first technology groove.By the cleaning liquid comprising nitric acid to textured surface
Structure efficiently removes metal ion.It is especially also removed by the cleaning liquid and is located at etching hole textured surface in other words
Metal ion in structure.By reliable and effective cleaning, it is effectively prevented from the solar-electricity made of the semiconductor substrate
Efficiency caused by metal ion of the pond due to retention reduces.Preferably, cleaning liquid is the aqueous solution for including nitric acid.It is described water-soluble
Liquid preferably has distilled water as matrix.Cleaning liquid includes especially 20% to 45% nitric acid.The data are mass percents.
Pass through the temperature TRSo that cleaning is optimised and reduces the process time.It cleans liquid and is preferably free of hydrogen peroxide.Cleaning
Liquid initial does not have metal ion.At least one clean tank is configured to leaching swimming slot and/or spray groove.It is being configured to leaching swimming
In the case of slot, the cleaning of textured surface texture, which is immersed by semiconductor substrate in cleaning liquid, to be carried out.It is being configured to spray
In the case of drenching slot, the cleaning of textured surface texture with cleaning liquid by being sprayed and then cleaning liquid being undertaken on
It is carried out in spray groove.In the case where at least one clean tank is configured to spray groove, preferably at least one cleaning
At least one spray unit for spraying cleaning liquid is arranged in the inside and/or top of slot.In at least one clean tank
In the case of being configured to leaching swimming slot, cleaning device is for example at least one ultrasound unit, can be generated in cleaning liquid
Ultrasonic wave.
High efficiency is ensured according to a kind of equipment of improved design project.The cleaning device has multiple priorities arrangement
Clean tank with cleaning liquid.By textured surface texture in multiple arranged in succession in other words by multiple successive cloth
Gradually cleaning in the clean tank set, metal ion are thoroughly removed very much.In every the latter clean tank, in cleaning liquid
In the concentration of metal ion that is cleaned it is lower, therefore reduce textured surface texture contaminated possibility again.It is more
A clean tank constitutes cascade cleaning.For this purpose, preferably along semiconductor substrate conveying direction last clean tank use without
The cleaning liquid clean in other words used, the cleaning liquid are reused for before conveying direction is arranged in after the cleaning operation
Clean tank.After again by use, which preferably arranges along conveying direction in preceding clean tank again again
It uses.The process repeats always, until the cleaning liquid being used multiple times is cleaned by (being observed along conveying direction) first
Treating stations or regeneration are supplied after the cleaning process of slot.Arranged in succession it is outstanding two and preferably arrange three clean tanks.It is described
At least one clean tank is configured to leaching swimming slot and/or spray groove.In the case where being configured to leaching swimming slot, textured surface texture
Cleaning by semiconductor substrate immerse cleaning liquid in carry out.In the case where being configured to spray groove, textured surface knot
The cleaning of structure is carried out by being sprayed with cleaning liquid and then cleaning liquid being undertaken in spray groove.It is being configured to spray groove
In the case of, the cleaning of textured surface texture with cleaning liquid by being sprayed and cleaning liquid being then undertaken on spray
It is carried out in slot.In the case where at least one clean tank is configured to spray groove, preferably at least one clean tank
At least one spray unit for spraying cleaning liquid is arranged in internal and/or top.It is constructed at least one clean tank
In the case of for leaching swimming slot, cleaning device is for example at least one ultrasound unit, can generate ultrasound in cleaning liquid
Wave.The cleaning liquid especially includes nitric acid.Preferably, cleaning liquid is the aqueous solution being made of distilled water and nitric acid.Cleaning
Liquid preferably has temperature TR, wherein 15 DEG C≤TR≤ 65 DEG C, especially 20 DEG C≤TR≤ 45 DEG C, and especially 40 DEG C≤TR≤50
℃。
High efficiency is ensured according to a kind of equipment of improved design project.The cleaning device has at least one spray single
Member, the spray unit are used for spray cleaning liquid, the spray unit on the textured surface texture and especially arrange
Inside at least one clean tank and/or top.At least one spray unit has at least one nozzle.Described at least one
A spray unit preferably has multiple nozzles, arranges as described below, i.e., with the bottom side of cleaning liquid spray semiconductor substrate
The top side and/or.At least one spray unit is preferably arranged as described below, that is, cleans liquid in spray semiconductor substrate
It is undertaken on later at least one clean tank.At least one clean tank is thus configured to spray groove.
High efficiency is ensured according to a kind of equipment of improved design project.The cleaning device has multiple priorities arrangement
Spray unit, it is outstanding that the spray unit is used for spray cleaning liquid, the spray unit on the textured surface texture
It is arranged in inside corresponding clean tank and/or top.Conveying direction successively cloth of the spray unit along semiconductor substrate
It sets.Each spray unit has at least one nozzle.Each spray unit preferably has multiple nozzles, with cleaning liquid spray
The bottom side and/or top side of semiconductor substrate.It is configured with a clean tank in other words for each spray unit correspondence.Clean tank phase
Corresponding spray unit is arranged as described below, that is, cleans liquid and is undertaken on clean tank after spraying semiconductor substrate
In.The clean tank is thus configured to spray groove.Preferably, in addition to the first spray unit of the conveying direction along semiconductor substrate
Except, spray unit has relative to the overfall for arranging preceding spray unit along conveying direction.By along conveying direction most
The cleaning liquid being undertaken on after the cleaning process of spray unit afterwards in last clean tank, thus for by preceding arrangement
Spray unit cleaning process again.After the process of cleaning again, cleaning liquid is directed at further through overfall preceding
The spray unit of arrangement.It is repeated up to the first spray unit, wherein the cleaning liquid accepted in the first clean tank then supplies
To treating stations or regeneration.By the described cascade cleaning and during each cleaning more comprising the cleaning process than carrying out before
The recycling of the cleaning liquid of few metal ion, realizes the cleaning effectively and to economize on resources.
High efficiency is ensured according to a kind of equipment of improved design project.The cleaning device has at least one with punching
The flushed channel of wash liq, wherein the flushing liquid especially from liquid, i.e., selects in water and distilled water.At least one punching
After washing trough is preferably directly arranged at the first technology groove.It is preferred that multiple flushed channels are equipped with, after being directly arranged at the first technology groove
After being directly arranged at last clean tank.At least one flushed channel is configured to leaching swimming slot and/or spray groove.It is being configured to spray
In the case of slot, at least one spray list for spraying semiconductor substrate with flushing liquid is configured at least one spray groove
Member so that flushing liquid is undertaken on after flushing process at least one flushed channel.Multiple flushed channels are preferably configured as cascade punching
It washes.For this purpose, preferably being used along the last flushed channel of the conveying direction of semiconductor substrate clean in other words without what is used
Flushing liquid, such as ultra-pure water, the flushing liquid are reused for arranging preceding flushed channel along conveying direction after the cleaning operation.
Flushing liquid is preferably used along the preceding flushed channel of conveying direction arrangement again, until flushing liquid is seen along conveying direction
It is handled or is regenerated after cleaning process in the first flushed channel examined.It can be arranged at least between rinsing cascade flushed channel
One clean tank preferably arranges that multiple clean tanks, multiple clean tanks constitute cleaning cascade between rinsing cascade flushed channel.
High efficiency is ensured according to a kind of equipment of improved design project.The cleaning device has at least one with punching
The flushed channel of wash liq and at least one clean tank with cleaning liquid.At least one flushed channel is especially directly arranged at
After first technology groove and/or after being directly arranged at least one clean tank.Flushing liquid is preferably water, especially distills
Water.Multiple clean tanks are preferably successively arranged.Cleaning liquid especially includes the aqueous solution of nitric acid.It is preferred that directly last clear
Flushed channel is arranged after clean slot.At least one flushed channel and/or at least one clean tank are configured to leaching swimming slot and/or spray
Drench slot.The spray unit that semiconductor substrate is sprayed for cleaning liquid in other words with flushing liquid is configured with for each spray groove.
It is ensured by the simple and efficient of clean textured surface texture according to a kind of equipment of improved design project
Post-processing.Second process liquid include hydrogen fluoride and nitric acid, especially 0.1% to 49% hydrogen fluoride and 2% to 65%
Nitric acid.Textured surface texture is flattened by the second process liquid and reduces its surface, and high efficiency is realized with this.The
Two process liquids especially include the aqueous solution of hydrogen fluoride and nitric acid.The aqueous solution preferably has distilled water as matrix.Second
Process liquid is preferably free of hydrogen peroxide.With this optimization process duration and technology stability, and simplify the equipment
Construction.Second process liquid includes the nitric acid HNO of especially 5% to 25% hydrogen fluoride HF and 15% to 30%3.It is above-mentioned
Data are indicated with mass percent.
It is ensured by the simple and efficient of clean textured surface texture according to a kind of equipment of improved design project
Post-processing.Second process liquid has temperature T2, wherein providing：15℃≤T2≤ 65 DEG C, especially 20 DEG C≤T2≤35
℃.Pass through temperature T2Optimization post-processes and reduces the process time.
Ensure that generation carries extremely low reflection loss and efficient texturing according to a kind of equipment of improved design project
Surface texture.It is equipped with the cleaning device for cleaning reprocessed textured surface texture, the cleaning device is outstanding
It has the clean tank of the cleaning liquid with alkalinity, and the cleaning liquid of the alkalinity especially includes potassium hydroxide and/or hydroxide
Sodium.When being post-processed by the second process liquid, porous superficial layer spongiform in other words will produce.By being arranged in second
Other cleaning devices after technology groove ensure to remove porous superficial layer.For this purpose, the cleaning device especially has band alkalinity
Cleaning liquid clean tank.The cleaning liquid of the alkalinity especially includes the aqueous solution of potassium hydroxide and/or sodium hydroxide.
The aqueous solution especially has distilled water as matrix.The cleaning liquid of the alkalinity has temperature TA, wherein preferably：18℃
≤TA≤45℃.Preferably arrangement carries the flushed channel of flushing liquid after the clean tank.Preferably before the clean tank and
Flushed channel of the arrangement with flushing liquid afterwards.The other cleaning devices being arranged in after the second technology groove especially include at least
One clean tank and/or at least one flushed channel.At least one clean tank and/or at least one flushed channel are configured to
Leaching swimming slot and/or spray groove.It is configured with for each spray groove for cleaning liquid, flushing liquid spray to be post-treated in other words
Textured surface texture spray unit.Multiple clean tanks are preferably configured as cleaning cascade.Multiple flushed channels preferably comprise
Rinse cascade.
It is ensured according to a kind of equipment of improved design project and simple and efficient generates textured surface texture.It is arranged
It is useful for the conveying device that semiconductor substrate is conveyed along conveying direction.The equipment may be implemented as chain type in conveying device
(Inline) equipment.Conveying device ensures semiconductor substrate along conveying direction to first technology groove, the cleaning device, institute
State the second technology groove and when necessary discontinuous or continuous, the horizontal conveying of other cleaning devices.Semiconductor substrate
Preferably continuously and/or flatly conveyed along conveying direction.
The technical problems to be solved in the utility model also resides in, and provides a kind of method, is used to be chemically treated to carry and be sawed
Semiconductor substrate being formed or by the molding surface texture of semiconductor melt is cut, the method can be with simple and efficient
Mode remove being formed by sawing or by the molding surface texture of semiconductor melt and generate textured surface texture, use
Extremely low reflection loss and efficient solar cell are carried in manufacture.The method especially can be in a manner of simple and efficient
Realize the surface texture that removal is generated by Buddha's warrior attendant scroll saw.
Above-mentioned technical problem is solved by the method with the method and step according to the utility model, i.e., a kind of for chemistry
The method of semiconductor substrate of the processing with the surface texture formed by sawing comprising method and step：
The semiconductor substrate with the surface texture formed by sawing is prepared,
It is generated by surface texture that sawing is formed and by metal Assisted Chemical Etching Process by the removal of the first process liquid
Textured surface texture,
The implementation of textured surface texture is cleaned at least once,
The textured surface texture cleaned is post-processed by chemical etching by the second process liquid.
According to the utility model method the advantages of it is corresponding with the above-mentioned advantage of the equipment according to the utility model.It is new according to this practicality
The method of type can also especially be improved by least one feature of the equipment according to the utility model.
The textured surface texture with extremely low reflection loss is ensured according to a kind of method of improved design project.Institute
It states textured surface texture to be made up of the first construction component, wherein at least 70% the first construction component has 100nm extremely
Between 500nm, especially 150nm to the full-size between 300nm.Preferably at least 80%, especially at least 90% the first construction
Element has maximum size.The maximum size be especially parallel to substrate plane maximum width and/or perpendicular to
The maximum length of substrate plane.First construction component is produced by the first process liquid by metal Assisted Chemical Etching Process
It is raw.
High efficiency is ensured according to a kind of method of improved design project.It is described clean at least once by cleaning liquid into
Row, the cleaning liquid include nitric acid, especially 5% to 68% nitric acid and especially 5% to 67% nitric acid.By described
It cleans at least once, reliably and efficiently removal is located at the metal ion on textured surface texture so that metal ion one
Aspect will not continue to change surface texture, on the other hand not weaken the efficiency of the solar cell manufactured by semiconductor substrate.It knits
The surface texture of structure is preferably repeatedly successively with cleaning cleaning liquid.The cleaning liquid especially includes 20% to 45% nitric acid
HNO3.The data are mass percents.Avoid textured surface texture again dirty with the metal ion cleaned with this
Dye.The cleaning at least once is carried out by the leaching swimming of semiconductor substrate and/or by the spray of semiconductor substrate.To be cleaned
Semiconductor substrate is preferably repeatedly successively sprayed with cleaning liquid in bottom side and/or on top side.For last spray process
Cleaning liquid is reused for arranging preceding spray process along the conveying direction of semiconductor substrate after the spray process.Accordingly
Ground, after being reused, which uses during arranging preceding spray along conveying direction again.Along edge
After first spray process of conveying direction observation, cleaning liquid is handled or is regenerated.It is in this way that cleaning liquid is more
It is secondary to be used to clean.What this can be achieved on, because semiconductor substrate during each spray is all not so good as used cleaning solution
Soma is net, and cleans liquid and contain less metal ion compared to semiconductor substrate to be cleaned.Pass through the tandem type
Cleaning process so that semiconductor substrate is cleaned effectively and with economizing on resources.
High efficiency is ensured according to a kind of method of improved design project.It is described clean at least once by flushing liquid into
Row, wherein the flushing liquid especially from liquid, i.e., selects in water and distilled water.The semiconductor substrate is preferably directly in gold
It is cleaned by flushing liquid after belonging to Assisted Chemical Etching Process.In addition, the semiconductor substrate is preferably directly by cleaning liquid
It is cleaned by flushing liquid after last cleaning.It is carried out by the cleaning of flushing liquid by soaking to swim and/or spray.Preferably,
It is built by flushing liquid and rinses cascade, wherein flushing liquid is used multiple times.Here, flushing liquid is seen along conveying direction
It examines and is reused during the cleaning of preceding progress.
The textured surface texture with extremely low reflection loss is ensured according to a kind of method of improved design project.Afterwards
Processed textured surface texture is made up of the second construction component, wherein at least 70% the second construction component has
200nm between 1200nm, especially 200nm to the full-size between 650nm.Preferably at least 80%, especially at least 90%
Second construction component has maximum size.The maximum size be especially parallel to substrate plane maximum width and/
Or the maximum length perpendicular to substrate plane.It is whole that second construction component is based on opposite first construction component of post-processing
It is flat so that reprocessed textured surface texture has in contrast smaller surface.
The textured surface texture with extremely low reflection loss is ensured according to a kind of method of improved design project.Extremely
It is few once to clean reprocessed textured surface texture, wherein the reprocessed textured surface texture is especially
By the cleaning cleaning liquid of alkalinity, the cleaning liquid of the alkalinity includes potassium hydroxide and/or sodium hydroxide.It is knitted in post-processing
When the surface texture of structure, the superficial layer of porous sponge type in other words will produce.By at least one another after post-processing
Outer cleaning removes porous superficial layer.The cleaning liquid of the alkalinity especially includes potassium hydroxide and/or sodium hydroxide
Aqueous solution.The aqueous solution preferably has distilled water as matrix.The cleaning liquid of the alkalinity has temperature TA, wherein it is preferred that
Ground：18℃≤TA≤45℃.The other cleaning by flushing liquid is preferably carried out after the cleaning by cleaning liquid.It is described
At least one cleaning is carried out by soaking swimming and/or spray.
It is ensured according to a kind of method of improved design project and simple and efficient removes the surface texture formed by sawing
With the textured surface texture of generation.The method step is implemented in chain equipment, and the semiconductor substrate especially connects
It conveys continuously.By making the method step implement in chain equipment, semiconductor substrate is automatically walked to the method
Rapid conveying.Preferably, semiconductor substrate continuously and/or is flatly transported by chain equipment.It can be with simple and have with this
The mode of effect generates the largely semiconductor substrate with desired textured surface texture.
The utility model further relates to a kind of cleaning device, is used to implement at least the one of chemical-treated semiconductor substrate
Secondary cleaning, and it is related to a kind of method, it is used to implement the cleaning at least once of chemical-treated semiconductor substrate.It is described clear
Clean device and method are particularly for implementing the cleaning at least once of the textured surface texture of semiconductor substrate.For implementing
At least once the feature of clean cleaning device and method with for being chemically treated the equipment of semiconductor substrate and described
Other features of method are unrelated.
Description of the drawings
Other feature, advantages and details of the utility model in the hereafter explanation of multiple embodiments by obtaining.In attached drawing：
Fig. 1 shows to implement according to first for being chemically treated the semiconductor substrate for carrying the surface texture formed by sawing
The schematic diagram of the chain equipment of example,
Fig. 2 shows with the surface texture formed by sawing semiconductor substrate and by the equipment chemistry according to Fig. 1 at
The vertical view of the semiconductor substrate with textured surface texture of reason,
Fig. 3 shows the enlarged plan view of the semiconductor substrate after the metal Assisted Chemical Etching Process by the first process liquid,
Fig. 4 show the semiconductor substrate in Fig. 3 by cleaning cleaning liquid after enlarged plan view,
Fig. 5 shows the textured table of the semiconductor substrate in Fig. 2 after carrying out by the post-processing of the second process liquid
The enlarged plan view of face structure,
Fig. 6 shows the chart of the wavelength for the light that the reflectance association of the semiconductor substrate in Fig. 5 is vertically injected,
Fig. 7 shows to implement according to second for being chemically treated the semiconductor substrate for carrying the surface texture formed by sawing
The schematic diagram of the chain equipment of example,
Fig. 8 shows to implement according to the third for being chemically treated the semiconductor substrate for carrying the surface texture formed by sawing
The schematic diagram of the equipment of example.
Specific implementation mode
Illustrate the first embodiment of the utility model below with respect to Fig. 1 to Fig. 6.Wet chemistry for semiconductor substrate 2
The chain equipment 1 of processing is to convey semiconductor substrate 2 along conveying direction 3 to have conveying device 4.Conveying device 4 includes multiple edges
3 arranged in succession of conveying direction and rotation driving conveying roller 5.
Chain equipment 1 has the first technology groove 6, the first cleaning device 7, the second technology groove 8 and the along conveying direction 3 in succession
Two cleaning devices 9.
First technology groove 6 is used to remove the surface texture S of semiconductor substrate 2 formed by sawing0With for passing through metal
Assisted Chemical Etching Process generates textured surface texture S1.First technology groove 6 is filled with the first process liquid 10.First process liquor
Body 10 is the aqueous solution using distilled water as matrix, and includes hydrogen fluoride HF, nitric acid HNO3With metal ion 11, especially silver from
Son.First process liquid 10 preferably comprises 3% to 21% hydrogen fluoride HF, 12% to 20% nitric acid HNO3With 0.001% to
0.05% silver nitrate AgNO3, especially 12% to 20% hydrogen fluoride HF, 15% to 20% nitric acid HNO3With 0.001% to
0.015% silver nitrate AgNO3.The first process liquid 10 such as nitric acid HNO comprising 15% hydrogen fluoride HF, 20%3With
0.005% silver nitrate AgNO3.First process liquid 10 does not contain hydrogen peroxide H2O2.First process liquid 10 has temperature
T1, wherein：10℃≤T1≤ 45 DEG C, especially 20 DEG C≤T1≤35℃.Above-mentioned data are mass percents.
First cleaning device 7 is used for by removing the textured surface of the metal nanoparticle cleaning in other words of metal ion 11
Structure S1.First cleaning device 7 includes successively the first flushed channel 12, the first clean tank 13, the second clean tank along conveying direction 3
14 and second flushed channel 15.Flushed channel 12,15 is filled with flushing liquid 16.Flushing liquid 16 is water, especially distilled water.Cleaning
Slot 13,14 is to clean the filling of liquid 17.Cleaning liquid 17 is the aqueous solution using distilled water as matrix, which includes 5%
To 68%, especially 5% to 67%, especially 10% to 60% and especially 20% to 45% nitric acid HNO3.Above-mentioned data are matter
Measure percentage.Cleaning liquid 17 has temperature TR, wherein：15℃≤TR≤ 65 DEG C, especially 40 DEG C≤TR≤50℃。
The second technology groove 8 after the first cleaning device 7 is arranged in for post-processing the texture cleaned by chemical etching
The surface texture S of change1.Second technology groove 8 is filled with the second process liquid 18.Second process liquid 18 is using distilled water as matrix
Aqueous solution, including hydrogen fluoride HF and nitric acid HNO3.Second process liquid 18 preferably comprise 0.1% to 49% hydrogen fluoride HF and
2% to 65% nitric acid HNO3And the nitric acid HNO of especially 5% to 25% hydrogen fluoride HF and 15% to 30%3.Second technique
Liquid 18 does not contain hydrogen peroxide H2O2.Second process liquid 18 has temperature T2, wherein：15℃≤T2≤ 65 DEG C, especially 20
℃≤T2≤35℃.Second process liquid 18 is for generating reprocessed textured surface texture S2, compared to texturing
Surface texture S1It is leveled and there is smaller surface.
The second cleaning device 9 after the second technology groove 8 is arranged in for cleaning reprocessed textured surface texture
S2.Second cleaning device 9 includes successively flushed channel 19 and clean tank 20 along conveying direction 3.Flushed channel 19 is with flushing liquid 16
Filling.Clean tank 20 is filled with the cleaning liquid 21 of alkalinity.The cleaning liquid 21 of alkalinity is the aqueous solution using distilled water as matrix,
It includes potassium hydroxide KOH and/or sodium hydroxide NaOH.The cleaning liquid 21 of alkalinity has temperature TA, wherein：18℃≤TA≤
45℃.The cleaning liquid 21 of alkalinity is particularly for removing surface texture S2Issuable porous table spongiform in other words
Face layer.
According to demand, the second cleaning device 9 can have other flushed channels with flushing liquid, be arranged in clean tank
After 20.Second cleaning device 9 can include other clean tanks, especially after flushed channel.The second cleaning device 9 or its
After his clean tank and/or flushed channel, drying device can be arranged in an ordinary way.
The mode of action of the chain equipment 1 is illustrated below and carries the surface formed by sawing for wet chemical process
Structure S0Semiconductor substrate 2 method：
Semiconductor substrate 2 continuously and is flatly transported by chain equipment 1 by conveying device 4.Semiconductor substrate 2 is outstanding
It is transported in conveying device 3 with multiple row so that can be handled simultaneously and be cleaned multiple semiconductor substrates 2 in other words.Semiconductor serves as a contrast
Bottom 2 is, for example, silicon substrate silicon wafer in other words.The especially polycrystalline of semiconductor substrate 2.The surface texture S formed by sawing0Example
As caused by Buddha's warrior attendant wire saw process before.The surface texture S formed by sawing0It include the saw damage generated by Buddha's warrior attendant wire saw process
Wound.Semiconductor substrate 2 is conveyed into the first technology groove 6 as described below by conveying device 4, i.e., semiconductor substrate is at least temporary
When be completely in the first process liquid 10.Semiconductor substrate 2 thus by the first process liquid 10 not only on the 2a of bottom side but also
It is handled by wet chemistry formula on the 2b of top side.On front side of bottom side 2a is constituted in solar cell later, and top side 2b is constituted
Back side.
The semiconductor substrate 2 conveyed into the first technology groove 6 has the table formed by sawing on bottom side 2a and top side 2b
Face structure S0.The surface texture S formed by sawing is removed in unique processing step by the first process liquid 100In other words
Saw damage, and pass through metal Assisted Chemical Etching Process (MACE：Metal Assisted Chemical Etching) generate texture
The surface texture S of change1.Textured surface texture S1It is generated with this, i.e., silver ion is on the surface of a substrate in other words for metal ion 11
It is precipitated in the form of cluster and/or sediment, and therefore works as catalyst and locally accelerate wet method around it
Chemical etching.Etch the first construction member in hole in other words for etching hole in the form of this is generated on the surface of semiconductor substrate 2
Part.Etching hole generate metal ion 11 in other words metal nanoparticle in the form of cluster and/or sediment where.It carves
The summation of etch pit constitutes textured surface texture S1.The first of at least 70%, especially at least 80% and especially at least 90%
Construction component 22 has in 100nm between 500nm, especially in 150nm to the maximum size A between 300nm1, it is described most
Big size A1Especially it is parallel to the maximum width of the substrate plane of fifty-fifty conductor substrate 2 and/or perpendicular to substrate plane
Maximum length.It is shown in FIG. 2 with the surface texture S formed by sawing0Semiconductor substrate 2, and be shown in FIG. 3
Textured surface texture S is carried after metal Assisted Chemical Etching Process1Semiconductor substrate 2.Textured surface knot in Fig. 3
Structure S1By the silver ion pollution in other words of metal ion 11 that form is cluster and/or sediment.
After the first technology groove 6, semiconductor substrate 2 is directed to the first cleaning device 7.Semiconductor substrate 2 presses following institute
It is pumped through the first flushed channel 12, the first clean tank 13, the second clean tank 14 and the second flushed channel 15 with stating, i.e. semiconductor serves as a contrast
Bottom 2 is temporarily, at least completely in flushing liquid 16 or cleaning liquid 17, and makes each bottom side 2a of semiconductor substrate 2
It is all cleaned with each top side 2b.In the first flushed channel 12 the first process liquid 10 is removed from semiconductor substrate 2 first.First
In clean tank 13 and in the second subsequent clean tank 14, from other words by textured surface texture S1Remove metal ion 11 or
Person says silver ion or metal nanoparticle.Metal ion 11 in other words silver ion or metal nanoparticle particularly by clear
High concentration nitric acid HNO in clean liquid 173Remove, wherein especially also metal ion 11 by the first construction component 22 in other words
It is removed in being cheated from etching.Two clean tanks 13,14 are arranged by priority, and it is silver-colored in other words to reduce eliminated metal ion 11
The textured surface texture S of ion recontamination1Possibility.According to demand, it can be arranged after the second clean tank 14
His clean tank.In the second flushed channel 15 cleaning liquid 17 is removed by flushing liquid 16.Fig. 4 is shown in the first cleaning device
Semiconductor substrate 2 with the textured surface texture cleaned after 7.
After the first cleaning device 7, semiconductor substrate 2 is directed to the second technology groove 8.Semiconductor substrate 2 is by conveying
Device 4 is conveyed along conveying direction 3 so that semiconductor substrate is temporarily, at least completely in the second process liquid 18.By
Two process liquids 18 are textured surface texture S1It is post-processed by chemical etching so that textured surface texture S1It is whole
It is flat, and generate in contrast smaller surface, reprocessed textured surface texture S2.Textured surface
Structure S2It is the second construction component 23 composition that etching hole etches hole in other words by form.At least 70%, especially at least 80%,
And especially at least 90% the second construction component 23 have 200nm between 1200nm, especially 200nm to 650nm it
Between maximum size A2, the maximum size A2Especially it is parallel to the maximum width of substrate plane and/or perpendicular to lining
The maximum length of baseplane.Reprocessed textured surface texture S2It is shown in FIG. 5.
After the second technology groove 8, semiconductor substrate 2 is directed to the second cleaning device 9.Semiconductor substrate 2 is by conveying
Device 4 is conveyed along conveying direction 3 so that semiconductor substrate is temporarily, at least completely in the cleaning solution of flushing liquid 16 and alkalinity
In body 21.By flushing liquid 16 the second process liquid 18 is removed from semiconductor substrate 2 first.Then by the cleaning solution of alkalinity
Body 21 removes possible porous superficial layer spongiform in other words, in textured surface texture S1On in the second process liquid
The superficial layer can be constituted in 18.Then other cleaning circulations and/or flush cycle can also be carried out.According to demand, such as
Other flushed channels can be arranged after clean tank 20.Comparison is shown by having post-processing after wet chemical process in fig. 2
The textured surface texture S crossed2Semiconductor substrate 2 with the surface texture S that is formed by sawing0Semiconductor substrate 2.
Fig. 6 shows that being associated with for reflectance R and the wavelength X of semiconductor substrate 2, the manufacture of the semiconductor substrate 2 carry texture
The surface texture of change.It may be implemented in other words with letter according to the method for the utility model according to the chain equipment 1 of the utility model
Single and effective mode manufactures the solar-electricity with about 0.10 to the 0.26 reflectance R within the scope of visible light and infra-red radiation
Pond.It thus may be implemented to generate texturing in other words according to the method for the utility model according to the chain equipment 1 of the utility model
Surface texture S2Extremely low reflection loss and efficient solar cell are carried for manufacturing.
Chain equipment according to the utility model and the method according to the utility model have the complexity reduced, and real
The solar cell that now manufacture effect is modified.The solar cell especially has lower reflectance, higher efficiency, higher
Short circuit current and higher floating voltage (English：open circuit voltage).High efficiency is by surface texture S2With
Thoroughly caused by cleaning, thoroughly cleaning avoids efficiency from reducing.According to the chain equipment 1 of the utility model and according to this practicality
Novel method can be simple and be neatly adjusted according to solar cell to be manufactured.
Unlike known method, surface texture S2Without porous superficial layer spongiform in other words.By
With being cleaned at least once before the post-processing of the second process liquid 18, metal ion 11 directly in metal Assisted Chemical Etching Process
After remove, and avoid in advance metal ion 11 cause continue undesirable chemical etching.In addition, passing through the texture cleaned
Remaining metal also retained is removed in the subsequent post-processing of the surface texture of change.Expand in post-processing moment etch pit.Chain equipment
1 length having particularly up to 14m, particularly up to 13m and particularly up to 12m.Including all cleaning circulations and flush cycle
Process lasting time inside is highest 6min.According to the chain equipment 1 of the utility model in other words according to the utility model
Method does not contain hydrogen peroxide especially, with this so that process stability is higher.With surface texture S2Semiconductor substrate 2 can be with
It is directly used in diffusion.The chain equipment 1 and the method preferably do not include additional additive, especially organic additive, with
This simplify process liquid 10,18, clean liquid 17,21 and flushing liquid 16 processing.Semiconductor substrate 2 can have surface knot
Structure S2, which is configured to thicker than on the 2b of top side on the 2a of bottom side.This semiconductor substrate 2 is suitable for manufacture PERC electricity
Pond (emitter with by surface passivation battery).
Illustrate the second embodiment of the utility model below according to Fig. 7.First cleaning device 7 is successively wrapped along conveying direction 3
Include the first flushed channel 12, the first clean tank 13, the second clean tank 14, third clean tank 14 ' and the second flushed channel 15.For the first punching
Spray unit 24 is arranged in washing trough 12.Spray unit 24 includes the storage container 28 for having flushing liquid 16.Flushing liquid 16 passes through
Spray pipeline 26 by pump 27 supplied to first jet 25 and second nozzle 25 '.First jet 25 sprays the bottom of semiconductor substrate 2
Side 2a, ' the top side 2b of spray semiconductor substrate 2 of second nozzle 25.The flushing liquid 16 collected in the first flushed channel 12 passes through
Return line 26 ' and it is directed at storage container 28.
Clean tank 13,14 and 14 ' is configured to cleaning cascade.For this purpose, clean tank 13,14,14 ' each of be separately equipped with spray
Drench unit 29,30,31.Last spray unit 31 along conveying direction 3 has storage container 32, by conduit 33 clean
Cleaning liquid 17 prepare in other words, i.e. not dirty is directed at storage container 32.Alternatively, the clean preparation in other words
For use cleaning solution can directly ' be imported by first jet 37 and second nozzle 37.It cleans liquid 17 and passes through 34 liters of heater
To temperature TR.Clean liquid 17 by spray pipeline 35 by pump 36 supplied to first jet 37 and second nozzle 37 '.First spray
Mouth 37 sprays the bottom side 2a of semiconductor substrate 2 with cleaning liquid 17, and second nozzle 37 ' sprays semiconductor substrate with cleaning liquid 17
2 top side 2b.Collect in third clean tank 14 ' in cleaning liquid 17 ' led back in storage container 32 by return line 35.
Arrange that the spray unit 30 of preceding centre includes storage container 38 relative to spray unit 31 along conveying direction 3,
Used cleaning liquid 17 is supplied by the overfall 39 from storage container 32 in storage container 38.The cleaning liquid 17 is borrowed
Heater 40 is helped to be maintained at temperature TR.It cleans liquid 17 and is supplied to first by pump 42 by spray pipeline 41 from storage container 38
Nozzle 43 and second nozzle 43 '.First jet 43 sprays the bottom side 2a of semiconductor substrate 2, second nozzle 43 with cleaning liquid 17
' the top side 2b of semiconductor substrate 2 is sprayed with cleaning liquid 17.The cleaning liquid 17 collected in the second clean tank 14 passes through reflux
Pipeline 41 ' and it is directed at storage container 38.
It arranges that preceding first spray unit 29 includes storage container 44 relative to spray unit 30 along conveying direction 3, deposits
Used cleaning liquid 17 is supplied by the overfall 45 from storage container 38 in storage container 44.The cleaning liquid 17 is borrowed
Heater 46 is helped to be maintained at temperature TR.It cleans liquid 17 and is supplied to first by pump 48 by spray pipeline 47 from storage container 44
Nozzle 49 and second nozzle 49 '.First jet 49 sprays the bottom side 2a of semiconductor substrate 2, second nozzle 49 with cleaning liquid 17
' the top side 2b of semiconductor substrate 2 is sprayed with cleaning liquid 17.The cleaning liquid 17 collected in the first clean tank 13 passes through reflux
Pipeline 47 ' and it is directed at storage container 44.Discharge pipe 50 is picked out from storage container 44.Discharge pipe 50 is for example directed at not further
The regenerating unit shown.Regenerating unit removes the metal ion 11 removed from semiconductor substrate 2 from cleaning liquid 17, and by again
Raw cleaning liquid 17 is directed at storage container 32 again by conduit 33.Alternatively, conduit 33 and supply not shown further
Container connects, and discharge pipe 50 is connect with process container not shown further so that the supply and processing of cleaning liquid 17 are all
It is guaranteed.
Clean the first concentration K with metal ion 11 in storage container 44 of liquid 171, have in storage container 38
Second concentration K of metal ion 112And the third concentration K with metal ion 11 in storage container 323.For described dense
Degree has：K1>K2>K3.It realizes that tandem type cleans with this, reduces the textured surface knot of 11 recontamination of metal ion removed
Structure S1Possibility.
Spray unit 51 is arranged for the second flushed channel 15.Spray unit 51 includes the storage container for having flushing liquid 16
52.Flushing liquid 16 from storage container 52 by spray pipeline 53 by pump 54 supplied to first jet 55 and second nozzle 55 '.
First jet 55 sprays the bottom side 2a of semiconductor substrate 2 with flushing liquid 16, and second nozzle 55 ' is partly led with the spray of flushing liquid 16
The top side 2b of body substrate 2.Flushing liquid 16 is collected in after flushing process in the second flushed channel 15 and by return line 53
' lead back to storage container 52.
Spray unit 24,51 can be constructed as rinsing cascade.The structure corresponds essentially to cleaning cascade.Spray unit 51 with
Clean is not previously used flushing liquid 16, for example with ultrapure water running in other words, which is led after the cleaning operation
It is incorporated in reusing for spray unit 24.In addition, each last nozzle 25,25 along conveying direction 3 of spray unit 24
' and nozzle 55,55 that spray unit 51 is last ' and other nozzles 25,25 ' and 55,55 ' independently supply clean flushing liquor
Body 16 for example supplies ultra-pure water.It is cleaned with flushing liquid 16 with realizing effectively and/or save resource with this.
Cleaning liquid 17 is from the first clean tank 13 and affiliated spray unit 29 to the second clean tank 14 and institute in order to prevent
The undesirable overflow of the spray unit 30 of category, spray unit 29 have roller 5 ', roller 5 is ' from the top side 2b of semiconductor substrate 2
Removal cleaning liquid 17.In the corresponding way, spray unit 30 and 31 have roller 5 ', roller 5 is ' from the top of semiconductor substrate 2
Side 2b removal cleaning liquid 17.Roller 5 ' also referred to as squeezes roller.Squeezing roller can be used alone in leaching swimming slot or spray
It drenches between the slot of slot form, regardless of whether the slot is implemented as technology groove, clean tank or flushed channel.
Second cleaning device 9 along 3 priority of conveying direction include the first flushed channel 19, clean tank 20 and the second flushed channel 19 '.
Spray unit 56 is arranged for the first flushed channel 19.Spray unit 56 includes the storage container 57 filled with flushing liquid 16.It rinses
Liquid 16 from storage container 57 by spray pipeline 58 by pump 59 supplied to first jet 60 and second nozzle 60 '.First spray
Mouth 60 sprays the bottom side 2a of semiconductor substrate 2 with flushing liquid 16, and second nozzle 60 ' sprays semiconductor substrate with flushing liquid 16
2 top side 2b.Flushing liquid 16 is collected in the first flushed channel 19 after flushing process and ' and is led back to by return line 58
Storage container 57.
Clean tank 20 is configured to leaching swimming slot corresponding to first embodiment.Roller 5 ' is gone from the top side 2b of semiconductor substrate 2
Except the cleaning liquid 21 of alkalinity, and prevents the cleaning liquid 21 of alkalinity from entering the second flushed channel 19 and ' be located at the second punching in other words
Washing trough 19 ' in flushing liquid 16 in.
Second flushed channel 19 is ' for by the clean semiconductor substrate 2 again of flushing liquid 16.' match for the second flushed channel 19
If spray unit 69.Spray unit 69 includes the storage container 70 filled with flushing liquid 16.Flushing liquid 16 is from storage container
70 by spray pipeline 71 by pump 72 supplied to first jet 73 and second nozzle 73 '.The flushing liquid 16 of first jet 73
The bottom side 2a of semiconductor substrate 2 is sprayed, second nozzle 73 ' sprays the top side 2b of semiconductor substrate 2 with flushing liquid 16.Flushing liquor
Body 16 collected in after flushing process the second flushed channel 19 ' in and storage container 70 ' imported by return line 71.
Spray unit 56,69 can be constructed as rinsing cascade.The structure essentially corresponds to clean cascade structure.Spray is single
Member 69 is not previously used flushing liquid 16, for example with ultrapure water running in other words with clean, and the flushing liquid 16 is in cleaning process
It is directed to reusing for spray unit 56 afterwards.In addition, each last nozzle along conveying direction 3 of spray unit 56
60,60 ' and nozzle 73,73 that spray unit 69 is last ' and other nozzles 60,60 ' and 73,73 ' independently supply is clean
Flushing liquid 16 for example supplies ultra-pure water.It is cleaned with flushing liquid 16 with realizing effectively and/or save resource with this.
Spray unit 24,51,56,69 can be configured to rinse cascade in an identical manner.The construction corresponds essentially to clearly
Clean cascade construction.Spray unit 69, should with the clean flushing liquid 16 not being previously used in other words, for example with ultrapure water running
Flushing liquid 16 is led to spray unit 56 to reuse after the cleaning operation.
Preceding embodiment is quoted in terms of other constructions of the chain equipment and other modes of action.
Illustrate the 3rd embodiment of the utility model below with respect to Fig. 8.Relative to preceding embodiment, difference lies in described to set
Standby 1 there is the first conveying device 4 and arrange posterior second conveying device 4 '.First conveying device 4 is semiconductor substrate 2 along defeated
Direction is sent to be conveyed from the first technology groove 6 up to the second flushed channel 15.Then semiconductor substrate 2 is not manually or by into one
Handling device shown in step be directed at the second conveying device 4 ', second conveying device 4 ' semiconductor substrate 2 along conveying direction from the
The conveying of two technology grooves 8 until the second flushed channel 19 '.With this by the first process liquid 10 metal Assisted Chemical Etching Process with knit
The surface texture S of structure1Then cleaning and chemical etching by the second process liquid 18 and reprocessed textured
Surface texture S2Then cleaning it is decoupled.With reference to preceding embodiment in terms of others construction and other modes of action.
Clean tank 13,14,14 ', 20 and/or flushed channel 12,15,19,19 ' is it is so structured that leaching swimming slot and/or spray groove.
The feature of single embodiment can be combined with each other according to demand and arbitrarily.The equipment 1 be also suitable for chemical treatment by
Direct-Wafer technologies directly by semiconductor melt manufacture and with by the molding surface texture S of semiconductor melt0's
Semiconductor substrate 2.
Substantially, all slots, be especially not only clean tank 13,14,14 ' and flushed channel 12,15,19,19 ', and
Including technology groove 6,8 and clean tank 20 can cancel in following components one or more, especially all, i.e.,：Storage is held
Device, the storage container particular with heater, pump, particularly for conveying process liquid either clean liquid pump one or
Multiple supply pipes and discharge pipe and fresh medium supply pipe.
In order to show to become apparent from, it is not shown in the drawing.
Correspondingly, flushed channel 12 and 15 can also have the supply pipe and discharge pipe supplied for medium.
Claims (15)
1. a kind of equipment for being chemically treated the semiconductor substrate with the surface texture formed by sawing comprising：
The first technology groove (6) of the first process liquid (10) is carried, first process liquid (10) is for removing by sawing shape
At surface texture (S0) and by metal Assisted Chemical Etching Process for generating textured surface texture (S1),
For to the textured surface texture (S1) implement clean first cleaning device (7) at least once,
The second technology groove (8) of the second process liquid (18) is carried, second process liquid (18) is for passing through chemical etching
For the textured surface texture (S cleaned1) post-processed.
2. equipment described in accordance with the claim 1, which is characterized in that first process liquid (10) has temperature T1, wherein：
10℃≤T1≤45℃。
3. equipment according to claim 2, which is characterized in that first process liquid (10) has temperature T1, wherein：
20℃≤T1≤35℃。
4. equipment described in accordance with the claim 1, which is characterized in that first cleaning device (7) has at least one carry
Clean the clean tank (13,14 of liquid (17)；13,14,14 '), wherein the cleaning liquid (17) has temperature TR, to this rule
It is fixed：15℃≤TR≤65℃。
5. equipment according to claim 4, which is characterized in that the cleaning liquid (17) has temperature TR, to this regulation：
40℃≤TR≤50℃。
6. equipment described in accordance with the claim 1, which is characterized in that first cleaning device (7) is arranged with multiple priorities
With cleaning liquid (17) clean tank (13,14；13、14、14‘).
7. equipment described in accordance with the claim 1, which is characterized in that first cleaning device (7) has at least one spray
Unit (29,30,31) is used for the textured surface texture (S1) on spray cleaning liquid (17), at least one spray
Leaching unit is arranged at least one clean tank (13,14,14 ') inside and/or top.
8. equipment described in accordance with the claim 1, which is characterized in that first cleaning device (7) is arranged with multiple priorities
Spray unit (29,30,31) be used for the textured surface texture (S1) on spray cleaning liquid (17), it is the multiple
Successively the spray unit of arrangement is arranged in corresponding clean tank (13,14,14 ') inside and/or top.
9. equipment described in accordance with the claim 1, which is characterized in that first cleaning device (7) has at least one carry
The flushed channel (12,15) of flushing liquid (16), wherein the flushing liquid (16) selects from water and distilled water.
10. equipment described in accordance with the claim 1, which is characterized in that first cleaning device (7) has at least one carry
The flushed channel (12,15) of flushing liquid (16) and at least one clean tank (13,14 with cleaning liquid (17)；13、14、14
‘)。
11. equipment described in accordance with the claim 1, which is characterized in that second process liquid (18) has temperature T2, wherein
Regulation：15℃≤T2≤65℃。
12. equipment according to claim 11, which is characterized in that second process liquid (18) has temperature T2, wherein
Regulation：20℃≤T2≤35℃。
13. equipment described in accordance with the claim 1, which is characterized in that the equipment is equipped for cleaning reprocessed texture
Surface texture (the S of change2) the second cleaning device (9).
14. equipment according to claim 13, which is characterized in that second cleaning device (9) has with the clear of alkalinity
The clean tank (20) of clean liquid (21).
15. equipment described in accordance with the claim 1, which is characterized in that the equipment be equipped with for semiconductor substrate (2) along defeated
Send direction (3；3,3 ') conveying device (4 of conveying；4、4‘).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102017206432.3A DE102017206432A1 (en) | 2017-04-13 | 2017-04-13 | Apparatus and method for chemically treating a semiconductor substrate having a sawn surface structure |
| DE102017206432.3 | 2017-04-13 | ||
| DE102017215484.5 | 2017-09-04 | ||
| DE102017215484 | 2017-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207993803U true CN207993803U (en) | 2018-10-19 |
Family
ID=61952715
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711087066.9A Pending CN108735594A (en) | 2017-04-13 | 2017-11-07 | Device and method for chemically treating semiconductor substrates with surface structures formed by sawing or formed from a semiconductor melt |
| CN201721488800.8U Active CN207993803U (en) | 2017-04-13 | 2017-11-07 | Device for chemically treating semiconductor substrates with surface structures formed by sawing |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711087066.9A Pending CN108735594A (en) | 2017-04-13 | 2017-11-07 | Device and method for chemically treating semiconductor substrates with surface structures formed by sawing or formed from a semiconductor melt |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN108735594A (en) |
| WO (1) | WO2018189131A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735594A (en) * | 2017-04-13 | 2018-11-02 | Rct解决方法有限责任公司 | Device and method for chemically treating semiconductor substrates with surface structures formed by sawing or formed from a semiconductor melt |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616551B (en) * | 2018-11-19 | 2021-02-09 | 横店集团东磁股份有限公司 | Reworking process for battery piece with bad organic matter on polycrystalline surface |
| CN110085513A (en) * | 2019-05-31 | 2019-08-02 | 西安奕斯伟硅片技术有限公司 | A kind of silicon wafer cleaning method and cleaning device |
| CN110473810A (en) * | 2019-08-21 | 2019-11-19 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Monocrystalline silicon process for etching and device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008048540A1 (en) * | 2008-09-15 | 2010-04-15 | Gebr. Schmid Gmbh & Co. | Process for the treatment of substrates, substrate and treatment device for carrying out the method |
| DE102009022477A1 (en) * | 2009-05-25 | 2010-12-16 | Universität Konstanz | A method of texturing a surface of a semiconductor substrate and apparatus for performing the method |
| DE102010017602B4 (en) * | 2010-06-25 | 2012-12-27 | Solarworld Innovations Gmbh | Method for reducing the metal contamination of a silicon wafer |
| JP2010245568A (en) * | 2010-07-21 | 2010-10-28 | Mitsubishi Electric Corp | Method of manufacturing solar cell |
| CN101937946B (en) * | 2010-09-16 | 2012-05-09 | 浙江大学 | Surface texture method of solar battery silicon slice |
| CN102034900A (en) * | 2010-10-27 | 2011-04-27 | 晶澳太阳能有限公司 | Texture etching method for quasi-monocrystalline silicon wafer |
| DE102011054359A1 (en) * | 2011-10-10 | 2013-04-11 | Q-Cells Se | Method for treating semiconductor wafer used for manufacture of solar cell, involves subjecting two saw-rough surfaces of semiconductor wafer to isotropic etching for removing crystal defect, crystal damage and/or contamination |
| CN102610692A (en) * | 2012-03-09 | 2012-07-25 | 润峰电力有限公司 | Method for preparing crystalline silicon nanometer and micrometer composite texture surface |
| CN102618937A (en) * | 2012-04-10 | 2012-08-01 | 苏州阿特斯阳光电力科技有限公司 | Texture etching technology of single crystalline silicon solar cell |
| CN103219428B (en) * | 2013-04-12 | 2015-08-19 | 苏州大学 | Suede structure of a kind of crystal silicon solar energy battery and preparation method thereof |
| CN103618020A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | Wet etching method in silicon solar cell production |
| DE102015205437A1 (en) * | 2015-03-25 | 2016-09-29 | Rct Solutions Gmbh | Apparatus and method for the chemical treatment of a semiconductor substrate |
| CN104966762B (en) * | 2015-07-09 | 2018-03-09 | 苏州阿特斯阳光电力科技有限公司 | The preparation method of crystal silicon solar energy battery suede structure |
| CN108735594A (en) * | 2017-04-13 | 2018-11-02 | Rct解决方法有限责任公司 | Device and method for chemically treating semiconductor substrates with surface structures formed by sawing or formed from a semiconductor melt |
-
2017
- 2017-11-07 CN CN201711087066.9A patent/CN108735594A/en active Pending
- 2017-11-07 CN CN201721488800.8U patent/CN207993803U/en active Active
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2018
- 2018-04-10 WO PCT/EP2018/059070 patent/WO2018189131A1/en active Application Filing
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735594A (en) * | 2017-04-13 | 2018-11-02 | Rct解决方法有限责任公司 | Device and method for chemically treating semiconductor substrates with surface structures formed by sawing or formed from a semiconductor melt |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018189131A1 (en) | 2018-10-18 |
| CN108735594A (en) | 2018-11-02 |
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