M335009 八、新型說明： 【新型所屬之技術領域】 本新型係有關於一種具有薄膜披覆之基板，其特別有關於 一種使用披覆薄膜修補基板表面粗糙度之具有薄膜披覆之基板， 其可被應用於高頻被動元件之製作。 【先前技術】 表面改善技術，在現今科技產業中，已爭得重要 地位。尤其，產品的表面改善與鍍膜技術，提升了新 產品與既有產品的功能，也產生了更好的保護機能。 表面改善技術，一般包含了表面處理技術，改善 了材料的機械性質；薄膜沉積技術或薄層材料披覆技 術’它以不同材質的披覆使物件產生了新的表面。薄 膜沉積技術已在許多不同的產業中，擔任極為重要的 角色，而超薄薄膜或奈米薄膜—厚度達奈米等級的薄層 材料，將是現階段沉積與披覆技術的主流。新興的奈 米薄膜技術、是基於奈米科技的披覆和薄膜技術，係 著眼於未來需求所開發出來的技術。 此披覆薄膜技術，係由奈米顆粒或自組合成之奈 米材料結合而成，再將其轉換成薄膜披覆於基材上。 此奈米薄膜披覆基材，可應用於製作高頻電子元件的 基板、咼頻電子晶片的構裝載板、光電構裝的晶片載 M335009 板、薄膜電子整合型被動元件、以及大型積體電路基 板。在電子被動元件的市場技術趨勢裡，元件尺寸0402 至0201再往更高元件積體密度的技術前進，其中，整 合型被動元件技術更將是未來主力。 在整合型被動元件的製造上，採用薄膜的元件製 程法，可以很容易獲得線寬數十微米至數百奈米尺寸 的薄膜元件，相較於厚膜網印塗佈法，薄膜元件製程 可擁有較精確的元件尺寸或較高元件密度。一般而 言，薄膜元件製程需要較高的製造成本，但是，當厚 膜網印技術需考慮精密塗佈、元件圖形需要黃光製 程、多層薄帶堆疊需要等均壓設備時，厚膜積體元件 的成本就不再低於薄膜整合型被動元件成本。 為了要提供一種具有良好微波特性之基板，奈米 披覆基板即可達到此一目標。可應用於整合型被動元 件製備。職是之故，申請人乃細心試驗與研究，並一 本鍥而不捨的精神，終於研究出可應用於微波頻段之 一種具有薄膜彼覆之基板。 【新型内容】 本創作之目的在於提供一種具有薄膜披覆之基板，其可應用 於微波頻段之元件製作。 為達上述目的，本創作提供一種具有薄膜披覆之基板，其包 含一基板，具有一第一表面及一第二表面；一披覆薄膜，披覆於 M335009 該基板之第一表面，其用於填補該基板之表面粗糙度；其中，該 披覆薄膜之厚度為微米至奈米等級。 根據本創作之一特徵，其中該基板係選自懸浮基板、矽基板、 申化叙基板、陶兗基板、玻璃基板、玻璃纖維基板、礙氫化合物 陶竟基板、鐵弗龍基板、鐵弗龍玻璃纖維基板及鐵弗龍陶瓷基板 — 〇 根據本創作之一特徵，其中披覆薄膜係選自二氧化矽薄膜、氮 矽化合物薄膜、氮化鋁薄膜及氮氧化矽薄膜之一。 根據本創作之一特徵，其中該披覆薄膜上可製作傳輸線結構、 濾波器結構及天線結構之一。 根據本創作之一特徵，其中該具有薄膜披覆之基板可操作頻率 大小為1GHz到50GHz之範圍。 為讓本創作之上述和其他目的、特徵、和優點能更明顯易懂， 下文特舉數個較佳實施例’並配合所附圖式，作詳細說明如下。 【實施方式】 雖然本創作可表現為不同形式之實施例，但附圖 所示者及於下文中說明者係為本創作可之較佳實施 例’並請了解本文所揭示者係考量為本創作之一範 例’且並非意圖用以將本創作限制於圖示及/或所描述 之特定實施例中。 現請參考第1圖，其顯示根據本創作之第一實施例之具有薄膜 M335009 披覆之基板100結構示意圖。其至少包含一基板113 ; —披覆薄膜 11卜該基板113具有一第一表面112及一第二表面114。該基板 113可選擇一般商用基板，懸浮基板、陶瓷基板、玻璃基板、玻璃 纖維基板、碳氫化合物陶瓷基板、高溫共燒陶瓷、低溫共燒陶瓷、 鐵弗龍基板、鐵弗龍玻璃纖維基板及鐵弗龍陶瓷基板，其中懸浮 基板為一般商用基板支撐一高度在接地所形成。使用商用基板的 優點是成本低，且製作容易。然而，為了能有效地整合主被動元 件至單一基板而達到系統單晶片（SyStem on chip，SOC)，該基板113 可選擇如懸浮基板、矽基板、矽鍺基板及砷化鎵基板等半導體性 機板。其中，懸浮基板可以採用微機電(MicroElectro-Mechanical， MEM)技術所形成的薄膜懸浮基板。 該披覆薄膜111之厚度為微米至奈米等級，其最佳厚度係選 自1微米及0·1微米之一。該披覆薄膜111用於填補該基板113之 表面粗糙度，改善基板操作於微波頻段之特性，利於高頻被動元 件之製作。該具有薄膜披覆之基板100可操作頻率大小為lGHz 到50GHz之範圍。該披覆薄膜m為氧化物薄膜，其最佳披覆薄 膜係選自二氧化石夕薄膜、㈣化合物薄膜、氮化銘薄膜及氮氧化 石夕薄膜之-。雜㈣膜m可使用物理氣相沉積祕(physical vapor deposition system，PVD)或化學氣相沉積系統 depositionsystem，CVD)製作。該披覆薄獏m之披覆薄膜表面n〇 可製作傳輸線結構、濾波器結構及天線結構之—。該傳輸線結構 可為-微帶線結構，其係由信號線熟麵所形紅該基板ιΐ3 M335009 之5亥第一表面114具有金屬。 現明參考第2圖’其顯親共平面波導結構製作於氮化銘薄 膜為1微米與αι微米之上。該雜線結構可為—共平面波導結構 120，由接地面·信號秦接地面所形成，其最佳設計阻抗為观。 該共平面波導結構120之該基板113其該第二表面114不具有金 屬。現請參考第2⑻圖，該共平面波導結構m之信號線寬度s 為0.215mm、接地面與信號線之距離g為〇 lmm及接地面寬度 Wg為0.645麵，其該基板113為氧化紹基板。現請參考第· 圖，該共平面波導結構120之信號線寬度s為〇145麵、接地面 與信號線之距離g為aimm及接地面寬度Wg為G 435mm，其該 基板113為魏鎵基板。現請參考第2刚，該共平面波導結構 120之信號線寬度s為〇165mm、接地面與信號線之距離g為 0.1mm及接地面寬度Wg為〇495inm，其該基板113為石夕基板。 該圖2中的頻率響應結果其皆都呈現相當低的微波損失。 現請參考第3圖，其顯示該共平面波導結構製作於氮氧化石夕 薄膜為1微雜αι微米之上。現請參考第3⑻圖，該共平面波導 、、構120之信號線寬度s為仏犯麵、接地面與信號線之距離名 為0.1mm及接地面寬度Wg為〇 645mm，其該基板113為氧化鋁 基板。現請參考帛3(b)圖，該共平面波導結構12〇之信號線寬度$ 為0.145臟、接地面與信號線之距離§為〇1麵及接地面寬度 %為0.435mm，其該基板ι13為砷化鎵基板。現請參考第3(c)圖， 该共平面波導結構120之信號線寬度s為〇165mm、接地面與信 M335009 號線之距離g為〇·1_及接地面寬度Wg為〇 495mm，其該基板 113為矽基板。該圖3中的頻率響應結果其皆呈現相當低的微波損 失。 ' 現明參考第4圖，其顯示該共平面波導結構製作於二氧化石夕 薄膜為1微米與〇·1微米之上。現請參考第4⑻圖，該共平面波導 結構120之信號線寬度s為〇.215mm、接地面與信號線之距離g 為0.1mm及接地面寬度Wg為〇 645mm，其該基板113為氧化鋁 基板。現請參考第4(b)圖，該共平面波導結構12〇之信號線寬度s 為0.145mm、接地面與信號線之距離g為〇 lmm及接地面寬度M335009 VIII. New description: [New technical field] The present invention relates to a substrate with a film coating, and particularly relates to a substrate with a film coating for repairing the surface roughness of a substrate using a coated film, which can It is applied to the production of high frequency passive components. [Prior Art] Surface improvement technology has gained an important position in today's technology industry. In particular, the surface improvement and coating technology of the product enhances the functionality of new and existing products and also produces better protection. Surface improvement techniques, which generally include surface treatment techniques, improve the mechanical properties of the material; thin film deposition techniques or thin-layer material coating techniques. It uses a different material to create a new surface for the object. Thin film deposition technology has played a very important role in many different industries, and ultra-thin films or nano-films – thin-layer materials with a thickness of up to nanometers will be the mainstream of deposition and coating technology at this stage. The emerging nanofilm technology is based on nanotechnology's coating and thin film technology and is based on technology developed for future needs. The drape film technology is a combination of nano particles or self-assembled nano materials, which are then converted into a film coated on a substrate. The nano film-coated substrate can be applied to a substrate for manufacturing high-frequency electronic components, a carrier plate for a frequency-frequency electronic chip, a wafer-mounted M335009 plate for photoelectric assembly, a thin film electronically integrated passive device, and a large integrated circuit substrate. . In the market technology trend of electronic passive components, the component sizes 0402 to 0201 move to higher component bulk density technology, and the integrated passive component technology will be the main force in the future. In the manufacture of integrated passive components, film components with a line width of tens of microns to hundreds of nanometers can be easily obtained by using a thin film component process method. Compared with the thick film screen printing method, the thin film component process can be obtained. Have a more accurate component size or higher component density. In general, the thin film component process requires a high manufacturing cost, but when thick film screen printing technology needs to consider precision coating, component graphics require yellow light process, multi-layer thin strip stacking and other equalizing equipment, thick film integrated body The cost of components is no longer lower than the cost of thin film integrated passive components. In order to provide a substrate having good microwave characteristics, a nano-coated substrate can achieve this goal. It can be applied to integrated passive component preparation. As a result of the job, the applicant has carefully tested and researched, and has been working hard to finally develop a substrate with a thin film that can be applied to the microwave frequency band. [New content] The purpose of this creation is to provide a substrate with a film coating that can be applied to components in the microwave frequency band. In order to achieve the above object, the present invention provides a substrate having a film coating, comprising a substrate having a first surface and a second surface; a coating film covering the first surface of the substrate of M335009, The surface roughness of the substrate is filled; wherein the thickness of the coated film is on the order of micrometers to nanometers. According to one feature of the present invention, the substrate is selected from the group consisting of a suspension substrate, a ruthenium substrate, a Shenhua substrate, a ceramic substrate, a glass substrate, a glass fiber substrate, a hydrogen barrier compound substrate, a Teflon substrate, and Teflon. Glass fiber substrate and Teflon ceramic substrate - According to one of the features of the present invention, the coated film is selected from the group consisting of a cerium oxide film, a nitrogen cerium compound film, an aluminum nitride film, and a cerium oxynitride film. According to one feature of the present invention, one of the transmission line structure, the filter structure and the antenna structure can be fabricated on the coated film. According to one feature of the present invention, the substrate having the film coating has an operable frequency ranging from 1 GHz to 50 GHz. The above and other objects, features, and advantages of the present invention will become more apparent and understood. [Embodiment] Although the present invention can be embodied in different forms, the embodiments shown in the drawings and the following description are preferred embodiments of the present invention. One example is created and is not intended to limit the present invention to the particular embodiments illustrated and/or described. Referring now to Figure 1, there is shown a schematic view of the structure of a substrate 100 having a film M335009 overlaid in accordance with a first embodiment of the present invention. It comprises at least one substrate 113; a coated film 11 having a first surface 112 and a second surface 114. The substrate 113 can be selected from a general commercial substrate, a suspension substrate, a ceramic substrate, a glass substrate, a glass fiber substrate, a hydrocarbon ceramic substrate, a high temperature co-fired ceramic, a low temperature co-fired ceramic, a Teflon substrate, a Teflon glass fiber substrate, and Teflon ceramic substrate, in which the suspended substrate is formed by a general commercial substrate supporting a height at ground. The advantage of using a commercial substrate is that it is low in cost and easy to manufacture. However, in order to effectively integrate the active and passive components to a single substrate to achieve a system-on-a-chip (SOC), the substrate 113 may select a semiconductor device such as a floating substrate, a germanium substrate, a germanium substrate, and a gallium arsenide substrate. board. The suspended substrate may be a film suspension substrate formed by MicroElectro-Mechanical (MEM) technology. The thickness of the coated film 111 is in the order of micrometers to nanometers, and the optimum thickness is selected from one of 1 micrometer and 0.1 micrometer. The coated film 111 is used to fill the surface roughness of the substrate 113, improve the characteristics of the substrate operating in the microwave frequency band, and facilitate the fabrication of high frequency passive components. The substrate 100 having a film coating can operate at a frequency ranging from 1 GHz to 50 GHz. The coating film m is an oxide film, and the optimum coating film is selected from the group consisting of a cerium oxide film, a (4) compound film, a nitriding film, and a oxynitride film. The hetero (IV) film m can be produced using a physical vapor deposition system (PVD) or a chemical vapor deposition system (CVD). The surface of the coated film of the thin film can be made into a transmission line structure, a filter structure and an antenna structure. The transmission line structure may be a microstrip line structure which is formed by a signal line familiar surface. The first surface 114 of the substrate ι 3 M335009 has a metal. Referring now to Figure 2, its affi-coplanar planar waveguide structure is fabricated on a nitride film of 1 μm and αι μm. The hybrid structure may be a coplanar waveguide structure 120 formed by a ground plane and a signal ground plane, and the optimum design impedance is an aspect. The substrate 113 of the coplanar waveguide structure 120 has no metal on the second surface 114. Referring to FIG. 2(8), the signal line width s of the coplanar waveguide structure m is 0.215 mm, the distance g between the ground plane and the signal line is 〇lmm, and the ground plane width Wg is 0.645, and the substrate 113 is a oxidized substrate. . Referring to FIG. 1 , the signal line width s of the coplanar waveguide structure 120 is 〇145, the distance g between the ground plane and the signal line is aimm, and the ground plane width Wg is G 435 mm, and the substrate 113 is a Wei gallium substrate. . Referring now to the second, the signal line width s of the coplanar waveguide structure 120 is 〇165 mm, the distance g between the ground plane and the signal line is 0.1 mm, and the ground plane width Wg is 〇495 inm, and the substrate 113 is a Shixi substrate. . The frequency response results in Figure 2 all exhibit relatively low microwave losses. Referring now to Figure 3, it is shown that the coplanar waveguide structure is fabricated on a nitrous oxide film of 1 microe. Referring to FIG. 3(8), the signal line width s of the coplanar waveguide, the structure 120 is 仏, the distance between the ground plane and the signal line is 0.1 mm, and the ground plane width Wg is 〇645 mm, and the substrate 113 is Alumina substrate. Referring now to Figure 3(b), the signal line width of the cascode waveguide 12 is 0.145, the distance between the ground plane and the signal line is 〇1 and the width of the ground plane is 0.435 mm. Ip13 is a gallium arsenide substrate. Referring to FIG. 3(c), the signal line width s of the coplanar waveguide structure 120 is 〇165 mm, the distance g between the ground plane and the letter M335009 is 〇·1_, and the ground plane width Wg is 〇495 mm. The substrate 113 is a germanium substrate. The frequency response results in Figure 3 all exhibit relatively low microwave losses. Referring now to Figure 4, it is shown that the coplanar waveguide structure is fabricated on a thin film of 1 micron and 1 micron. Referring to FIG. 4(8), the signal line width s of the coplanar waveguide structure 120 is 215.215 mm, the distance g between the ground plane and the signal line is 0.1 mm, and the ground plane width Wg is 〇645 mm, and the substrate 113 is alumina. Substrate. Referring now to Figure 4(b), the signal line width s of the coplanar waveguide structure 12 is 0.145 mm, and the distance g between the ground plane and the signal line is 〇 lmm and the ground plane width.
Wg為0.435mm，其該基板113為珅化鎵基板。現請參考第吩)圖， 該共平面波導結構12G之職線寬度s為Q165mm、接地面與信 號線之距離g為G.lmm及接地面寬度Wg為G 495mm，其該基板 113為石夕基板。該圖4中的頻率響應結果其皆呈現相當低的微波損 失。 在本創作之之第二實施例，如第5(a)圖所揭示係為一雙模態帶 通濾波$製條-披覆二氧切之氧化絲板·。該髓態帶通 滤波1§ 230製作於二氧化石夕薄膜211之表面21〇。其中，該二氧化 石夕薄膜2ΐι填補於該基板213之第一表面m且該第二表面214 上具有金屬。駿模態帶職波器23〇，係由-射頻信號輪入埠 220、一射頻扣號輪出埠22卜一環型單元222及一微擾單元 所形成，其結構參數 Wl=l2.5 mm、W2=12.5 mm、W3=0.2 mm、 W4-0.2 mm ’其中該環形單元222設計係為全導波長度，亦即環 M335009 7單7〇之長度而為共振頻率之波長之整數倍。該射頻信號輸入淳 ⑽與該射頻信號輪出璋221設置於該披覆基板之薄膜表面21〇， 作為該具雙模態帶通渡波器咖之信號輸出/入端。該射頻信號輸 入琿220與該射頻信號輸出璋221的最佳設計阻抗為削，但亦 可為其他的特性阻抗值。若該射頻信號輸入蟑挪與該射頻信號 輸出埠221❸阻抗不為則，則與其他元件連接時，只要作W且 抗轉換即可。該射頻信號輸入璋22()與該射頻信號輸出瑋切之 特性阻抗係為1〇_15()歐姆。該射頻信號輸人埠⑽與該射頻信號 2出璋221需互為正交輕合饋人，其之間的最佳距離為四分之一 ‘皮長如第5(b)圖所揭示係為—雙模態帶通濾、波器製作於一彼覆 ^氧切之氧化錄板厕之頻率響顧。該具雙模態帶通滤波 器230之3 dB插入損失阻抗頻寬之定義下，其中心頻率為 2.45GHz、頻寬比約為16%，其符合無線藍芽傳輸臟亂μ 之規格。 在本創作之之第三實施例，如第6⑻圖所揭示係為一共平面波 導結構帶通濾、波ϋ製作於-披覆氮氧錄之4化鎵基板·。該共 平面波導結構帶通濾波器32〇製作於氮氧化碎薄膜3ιι之表面 310。其中，該氮氧化矽311填補於該基板313之第一表面μ]且 該第二表© 314上不具有金屬。該共平面波導結構帶通渡波 320，係&-接地面·信號線-接地面所形成。其該共平面波導結; 帶通濾、波器結構參數為Wl=2.12mm、W2=0.2mm、mir W4=0.2 mm、W5=G.5 mm、g=G.4 mm、di=().15 軸、d2=〇 2 咖 11 M335009 糊，” (13=1.75 mm、¢14=1.72 mm、d5=7 mm。第 6(b)圖所揭示係為一共 平面波導結構帶通濾波器320製作於一披覆氮氧化矽之神化鎵基 板300。該具共平面波導結構帶通濾波器32〇之3犯插入損失阻 抗頻寬之定義下，其中心鮮為2.1GHz、頻寬比約為133%，其 符合寬頻濾、波器之規格。 在本創作之之第四實施例，如第7⑻圖所揭示係為一微帶線型 窄頻天線430製作於-披覆氮她之雜板㈣。該微帶線型窄頻 天線430製作於薄膜411之表面41〇。其中，該氮化轉膜4ιι填 補於該基板413之第-表面412且該第二表面414上具有金屬。 該微帶線型窄頻天線430，係由-片型單元42〇及一饋入單元421 所形成。該片型單元420設置於該披覆薄膜411的第一表面彻， 其用於產生-輻射能量，該H射能量係為—_極化機制。為了 增加輻射能量，該橢圓形單元414之第二表面無任何金屬包覆， 其可減少接地金屬對輻射電磁場造成之損耗。第7_所揭示係為 一微帶線鮮敍線43〇製胁—顧氮她之縣板彻舞 1〇犯返回損失頻寬之定義下，可看出其第一截止頻率為 4.0職，第二截止頻率物砸，其規格符合窄頻天線之規格。 紅上所这，根據本創作之一種具有_披覆之基板刚，其同 ^具有以頂優點：高、微小化、易調整頻寬、易整合於半 程及具有高度簡魏倾，各姆料之基板皆可實現該 八有薄膜披覆之基板100。另外， 乃P具有大頻見及良好的輻射場型， 可廣泛應祕超寬頻絲通訊系統中。The Wg is 0.435 mm, and the substrate 113 is a gallium antimonide substrate. Referring now to the figure, the plane width s of the coplanar waveguide structure 12G is Q165mm, the distance g between the ground plane and the signal line is G.lmm, and the ground plane width Wg is G 495mm, and the substrate 113 is Shi Xi Substrate. The frequency response results in Figure 4 all exhibit relatively low microwave losses. In the second embodiment of the present invention, as shown in Fig. 5(a), a dual mode band pass filter is used for the strip-coated dioxygen oxide wire plate. The medullary bandpass filter 1 § 230 was fabricated on the surface 21 of the silica dioxide film 211. The dioxide film 2 is filled on the first surface m of the substrate 213 and has a metal on the second surface 214. The modal mode with the occupational wave device is 23〇, which is formed by the -RF signal wheel 埠220, a RF buckle wheel 埠22, a ring type unit 222 and a perturbation unit, and its structural parameter Wl=l2.5 mm , W2 = 12.5 mm, W3 = 0.2 mm, W4-0.2 mm 'where the annular unit 222 is designed to be a full guided wave length, that is, the length of the ring M335009 7 is 7 times and is an integer multiple of the wavelength of the resonant frequency. The RF signal input 淳 (10) and the RF signal wheel 璋 221 are disposed on the film surface 21〇 of the coated substrate as a signal output/input of the dual-mode band-passing wave device. The optimal design impedance of the RF signal input port 220 and the RF signal output port 221 is reduced, but may be other characteristic impedance values. If the RF signal input is not the same as the RF signal output 埠221❸, if it is connected to other components, it is only necessary to perform W and resist conversion. The characteristic impedance of the RF signal input 璋22() and the output of the RF signal is 1〇_15() ohms. The RF signal input 埠 (10) and the RF signal 2 璋 221 need to be orthogonal to each other, and the optimal distance between them is one quarter of the 'skin length as disclosed in Fig. 5(b). For the dual-mode bandpass filter, the waver is made in a frequency response of the oxygen-cutting plate toilet. The dual-mode bandpass filter 230 has a 3 dB insertion loss impedance bandwidth definition with a center frequency of 2.45 GHz and a bandwidth ratio of approximately 16%, which is consistent with the specifications of wireless Bluetooth transmission. In the third embodiment of the present invention, as shown in Fig. 6 (8), a coplanar waveguide structure is subjected to pass-through filtering, and a wave is formed on a galvanic substrate. The coplanar waveguide structure band pass filter 32 is formed on the surface 310 of the oxynitride film 3 ι. The yttrium oxynitride 311 fills the first surface μ of the substrate 313 and the second surface 314 does not have a metal. The coplanar waveguide structure is formed by a pass wave 320, a & ground plane, a signal line, and a ground plane. The coplanar waveguide junction; band pass filter, wave structure parameters are Wl=2.12mm, W2=0.2mm, mir W4=0.2 mm, W5=G.5 mm, g=G.4 mm, di=() .15 Axis, d2=〇2 Coffee 11 M335009 paste,” (13=1.75 mm, ¢14=1.72 mm, d5=7 mm. Figure 6(b) shows a coplanar waveguide structure bandpass filter 320 The gallium arsenide substrate 300 is coated on a lanthanum oxynitride. The conjugated waveguide structure bandpass filter 32 has a definition of insertion loss impedance bandwidth, and the center is rarely 2.1 GHz, and the bandwidth ratio is about 133%, which conforms to the specifications of the broadband filter and the wave filter. In the fourth embodiment of the present invention, as shown in Fig. 7(8), a microstrip line type narrowband antenna 430 is fabricated on the diaper-coated nitrogen (4) The microstrip line type narrowband antenna 430 is formed on the surface 41 of the film 411. The nitride film 4 is filled in the first surface 412 of the substrate 413 and has a metal on the second surface 414. The microstrip line type The narrowband antenna 430 is formed by a chip unit 42A and a feed unit 421. The chip unit 420 is disposed on the first surface of the cladding film 411 for generating radiation. The amount of the H-ray energy is a polarization mechanism. In order to increase the radiant energy, the second surface of the elliptical unit 414 is free of any metal coating, which can reduce the loss of the grounded metal to the radiated electromagnetic field. Revealing the system as a microstrip line, the line of the shackles of the fascinating line - Gu Ni, her county, the board dance, the definition of the return loss bandwidth, can be seen that its first cutoff frequency is 4.0, the second cutoff frequency Material, its specifications are in line with the specifications of narrow-band antennas. Red on this, according to one of the creations of the substrate with _ covering, the same with ^ has the advantages of: high, miniaturized, easy to adjust bandwidth, easy to integrate In the half-pass and high-level, the substrate of each material can realize the substrate 100 with the film coating. In addition, the P has a large frequency and a good radiation field type, and can be widely used for ultra-wideband wires. In the communication system.
12 M335009 96123112 M335009 961231
賴本_已以前述錄魏_示，然其麟肋限定本 創作，任何熟習此技藝者，在不脫離本創作之精神和範圍内，告 可作各種之更動與似。如上述的_，都可⑽各型式的修I 與變化，而不會破壞此創作的精神。因此本創作之賴範圍當視 後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖顯示為本創作之第一實施例之具有披覆薄膜基 板之共平面波導結構示意圖，· 第2圖顯示為本創作之具有披覆氮化鋁薄膜之共平面 波V結構於（a)氧化鋁基板（b)砷化鎵基板（c) 矽基板之頻率響應圖； 第3圖顯示為本創作之具有披覆氮氧化矽薄膜之共平 面波導結構於（a)氧化鋁基板（b)砷化鎵基板（c) 石夕基板之頻率響應圖； 第4圖顯示為本創作之具有披覆二氧化矽薄膜之共平 面波導結構於氧化鋁基板（b)砷化鎵基板 石夕基板之頻率響應圖； 第5圖為根據本創作之第二實施例之具有披覆二氧化 石夕薄膜於氧化鋁基板之雙模態帶通濾波器（a)結構 (b)頻率響應圖； 第6圖為根據本創作之第三實施例之具有披覆氮氧化 13 M335009 矽薄膜於砷化鎵基板之共平面波導結構帶通濾波器 (a)結構（b)頻率響應圖；及 第7圖為根據本創作之第四實施例之具有彼覆氮化鋁 薄膜於矽基板之微帶線型窄頻天線結構（a)結構（b) 頻率響應圖。 【主要元件符號說明】 100彼覆薄膜之基板 110披覆薄膜表面 111披覆薄膜 112第一表面 113 —基板 114第二表面 120共平面波導結構 200披覆二氧化矽之氧化鋁基板 210披覆薄膜表面 211披覆薄膜 212基板第一表面 213 —基板 214基板第二表面 220射頻信號輸入埠 221射頻信號輸出埠 222環形單元 223微擾單元 230雙模態帶通濾波器 300披覆氮氧化矽之砷化鎵基板 310披覆薄膜表面 311披覆薄膜 312基板第一表面 313 —基板 314基板第二表面 320共平面波導結構帶通濾波器 400披覆氮化鋁之矽基板 14 M335009 410彼覆薄膜表面 411披覆薄膜 412基板第一表面 413 —基板 414基板第二表面 420片型單元 421饋入單元 430微帶線型窄頻天線 15Lai Ben has already stated the creation of Wei, but his ribs limit the creation. Anyone who is familiar with this skill can make all kinds of changes and similarities without departing from the spirit and scope of this creation. As mentioned above, it is possible to (10) repair and change the various types without destroying the spirit of this creation. Therefore, the scope of this creation is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a structure of a coplanar waveguide having a coated film substrate according to a first embodiment of the present invention, and FIG. 2 is a view showing a coplanar wave having a coated aluminum nitride film. The V structure is shown in (a) the alumina substrate (b) the gallium arsenide substrate (c) 频率 substrate frequency response diagram; the third figure shows the coplanar waveguide structure with the coated yttria thin film in (a) Alumina substrate (b) gallium arsenide substrate (c) frequency response diagram of the stone substrate; Fig. 4 shows the coplanar waveguide structure with the coated ceria film on the alumina substrate (b) arsenic The frequency response diagram of the gallium substrate is shown in FIG. 5; FIG. 5 is a bimodal band-pass filter (a) having a coated ruthenium dioxide film on an alumina substrate according to the second embodiment of the present invention (b) Frequency response diagram; Fig. 6 is a diagram showing a frequency response diagram of a coplanar waveguide structure bandpass filter (a) with a nitriding nitrogen oxide 13 M335009 yttrium film on a gallium arsenide substrate according to a third embodiment of the present invention. And FIG. 7 is a fourth embodiment according to the present creation It coated with aluminum nitride thin film on silicon substrate of a microstrip-line narrowband antenna structure (a) Structure (b) the frequency response of FIG. [Main component symbol description] 100 film-coated substrate 110 coated film surface 111 coated film 112 first surface 113 - substrate 114 second surface 120 coplanar waveguide structure 200 coated with ceria-coated alumina substrate 210 Film surface 211 is coated with film 212 substrate first surface 213 - substrate 214 substrate second surface 220 radio frequency signal input 埠 221 RF signal output 埠 222 ring unit 223 perturbation unit 230 bimodal band pass filter 300 coated with arsenic oxynitride The gallium arsenide substrate 310 is coated with the film surface 311, the film 312, the substrate first surface 313, the substrate 314, the substrate, the second surface 320, the coplanar waveguide structure, the bandpass filter 400, and the aluminum nitride substrate 14 M335009 410 Film surface 411 is coated with film 412 substrate first surface 413 - substrate 414 substrate second surface 420 chip unit 421 feed unit 430 microstrip line type narrowband antenna 15