M312785 八、新型說明： 【新型所屬之技術領域】 本新3L係有關於種;慮波器，其特別有關於一種具有缺陷接地結 構之平面式濾波器。 _【先前技術】 ^年來㈣热線通5fl產品之市場需求大增，使得無線區域網路 (WLAN)之發展更躲速’尤其是在㈣年卩摘定出趣削無線區 :網^協定後，補提供了無__路通訊上許多前所未有之功 能’還提供了可令各種不同廠牌之無線產品得以相互溝通之解決方 案、’為無線區域網路之發展開殷了另—個新的里程碑，該協定並確定 了以核心錢執行單晶狀解財案，大幅降低了獅麟技術所需 之成扣麟鱗(！_轉峨歧地應麟錄絲祕產品中。 斜無線通訊產品在高功率狀態下，進行資料之無線傳輸時，一 般均極易產生電磁波，造成電魏干擾_)，故各細家為解決此 一問題’乃依績制定了相規，對不符規定之無線通訊產品之輸入 力以限制。有鑒於此，無線通訊產品之設計及製造廠商，在 設計無線觀產品之控魏_，必f考量_法規之要求。因此， 位於射猶端之_、元件，其諧_、通f會干擾後級電路；抑制 =繼必是應當設計的措施。按，各該廠商在輯及製造該等無線 之才工制線路4 ’所使用之渡波器元件，大多為共燒陶究之高 頻遽波器’該等高職波器雖對於抑制該等無線通訊產品所產生之二 M312785 ΐ 5一日修正補充 倍及一 U貞㉚波’有不錯之抑制效果，賴補小。但由於其價格昂 貝且而頭外之安衣知序，故裝設該種高頻濾波器，將徒增產品之製 作成本及程序，造成量產上之負擔。 為了解决上制題’有需要提供—種具有缺陷接地結構之平面式 濾波器以克服先前技術的缺點。 [新型内容】 本創作之主要目的在提供_種平面式m，將缺陷接地結構敍 刻於該基板之接地面上， 端糸統之信號錯誤率。 以達到見止帶之頻率響應並有效降低射頻前 為達上述之主要目的’本創作提出—種具有缺陷接地結構之平面 式遽波器’其包含-基板；複數個類s形式缺陷接地結構，·以及一傳 輸線。該基板具有H面與—第二表面，其中該第二表面係為接 地面；該複數個類s形式缺陷接地結構伽刻在該基板之該第二表面 上α及該傳輸線具有-第-射頻信號輸人埠與—第二射頻信號輸出 埠，亚配置於該基板之該第一表面上；其中該複數個㈣形式缺陷接 地結構係位於該傳輸線之正下方。 …根據本創作之具有缺陷接地結構之平面錢波器之—特徵，其中 u亥複數個缺陷接地結構係為具有特性阻抗之槽線。 根據本創作之具有缺陷接地結構之平面式濾波紅—特徵，其中該複 數個缺陷接地結獻長度係蚊雜_率下之導波長度 length)。 7 M312785 為讓本創作之上述和其他目的、特徵、和優點能更明顯易懂，下 文特舉數個難實施例，並配合所關式，作詳細說明如下。 【實施方式】 雖;、、:本創作可表現為不同形式之實施例’但附圖所示者及於下文 t說明者係為本創作可之較佳實施例，並請了解本文所揭示者係考量 -為本創作之一範例，且並非意圖用以將本創作限制於圖示及/或所描述 鲁之特定實施例中。 请芩照第1圖，其所示為本創作之具有缺陷接地結構之平面式濾 波器100之立體圖。該具有缺陷接地結構之平面式濾波器1〇〇包含一 基板30 ;複數個缺陷接地結構；以及一傳輸線2〇。該基板3〇具有一 第一表面31與一第二表面32，該第二表面32係為接地面；該複數個 缺陷接地結構係以類S形式蝕刻在該基板3〇之該第二表面32上；以 及該傳輸線20具有一第一射頻信號輸入埠21與一第二射頻信號輪出 _埠22，並配置於該基板30之該第一表面31上。需注意的是，其中該 基板 30 可以是 FR4、RT-Duroid Series、Al2〇3、R〇 Series、高溫共燒 陶iL低>里共燒陶l、焉介電材料、低介電材料與半導體所組成族群 中之任何一種基板30材料。該複數個類S形式缺陷接地結構1〇係為 具有特性阻抗(characteristic impedance)之槽線，其物理長度係決定於找 作頻率下之導波長度(guide-wavelength)，且該複數個類s形式缺陷接 地結構10係位於該傳輸線2〇之正下方。然而需注意的是，其中該複 數個類S形式缺陷接地結構1〇亦可以蝕刻於該第一射頻信號輪入蜂 8 M312785 21與該第二射頻信號輸出埠22之下方。 該傳輸線20係以微m飧堪+ _ 錢構成，該傳輸線2〇 _式亦可以平行轉 t滤波器，步階阻抗式咖，環形私式咖或雙繼波器等 各種开f來替代^例來說’根據本創作之-實施例，該傳輸線2〇 2為導線仁不限疋挪式傳輸線2〇’亦可是任何以微帶線構成之濾 ^兀件。該傳輸線20物縣度為—半波長；霸—射頻信號輸入璋 以與該以__出埠以電子蝴也滅&_度，且分 >別饋於該傳輸線20之兩端。在本創作之最佳實施例中，該複數個類S 形式缺陷接地結構10彼此間的轉合距離以〇〜ι〇麵以内為最佳。 為了良H評面式濾波器、，我們將先設計單—類$形式缺陷 =結構1〇之結構。請參照第2圖，其所示為單-類s形式缺陷接地 構〇之、、、。構圖。5亥類s形式缺陷接地結構削系侧於該基板3〇 之該第二表面32上。其結構參數為s為〇 6随，g為imm，a為8醜， 以及二為仏m。該結構參數係分別設計在頻率概及紐以產 生乐I減極點與-第二衰減極點。該類$形式缺陷接地結構1〇 之長度係決定該第—衰減極關率之—辦波長…2)，·該第二衰減 «績該類S形式缺陷接地結構1G的s參數值有_錢長的情況 I此外’在該類S形式缺陷接地結構1G之結構長度上，只要是符 :1M/!_=1，2,3,…)倍導波長，均可钱刻在該平面式濾波器之該基板 *面32以用來產生見止帶之頻率特性。由於該類$形式缺 陷接地結構10雜刻在該基板3〇之第二表面32,因此，會產生一反 共振點(场_，合結構·之_之能纽人，軸一止帶。 9 M312785 在本貫施例中，將該類s形式缺陷接地結構1〇設計於不同衰減極點並 成週期性排列’即可產生一具有寬止帶的頻率響應。利用這個特性， 我們可以應用在各種具有諧波響應之濾波器元件中。 請參照第3圖’其所示為本創作之單一類S形式缺陷接地結構10 之等效電路圖。其元件參數為L =259nH，c =〇 6pF，l2=-〇46nH，以 、及C2=-2.06pF。該元件參數係分別設計在頻率為4GHz及5GHz以產生 ’亥第-衰減極點無第二衰減麵，其等效電路等效於_連複數個並 p 振w亥複數個並聯共振器係等效於一階巴特沃夫(butterworth) 低通雛型’如公式⑴卿。其中&為—階巴槪夫低通_的輸入阻 抗’ 為该傳輸線2〇之特性阻抗。M312785 VIII. New description: [New technical field] The new 3L system is related to species; the wave filter is especially related to a planar filter with a defective ground structure. _[Prior technology] ^The market demand for 5fl products has increased greatly in the past year. The development of wireless local area network (WLAN) has become more difficult. Especially in the (fourth) year, the wireless area is selected: After that, it provides many unprecedented functions on the __ road communication. It also provides a solution that enables wireless products of various brands to communicate with each other, 'opening up for the development of wireless local area networks. The milestone, the agreement has also determined the implementation of the single-crystal solution with the core money, greatly reducing the need for the lion's technology to become a stalker (! _ 峨 峨 地 应 应 录 录 录 丝 丝 。 。 。 。 。 。 无线In the high-power state, when the data is transmitted wirelessly, it is generally easy to generate electromagnetic waves, causing electrical interference _), so each of the detailed families to solve this problem' is based on the performance of the rules, for the wireless The input force of communication products is limited. In view of this, the design and manufacture of wireless communication products, in the design of wireless control products, Wei _, must consider the requirements of the statute. Therefore, the _, the component, its harmonic _, the pass f will interfere with the latter circuit; the suppression = must be the measure that should be designed. According to the manufacturer, the waver components used in the production and processing of these wireless manufacturing lines 4' are mostly high-frequency choppers that are co-fired, and these high-frequency machines are for suppressing such The wireless communication products produced by the two M312785 ΐ 5 day correction supplement times and a U 贞 30 wave 'has a good suppression effect, depends on small. However, due to its high price and the order of the outside, the installation of such a high-frequency filter will increase the production cost and procedures of the product, resulting in a burden on mass production. In order to solve the above problem, it is necessary to provide a planar filter having a defective ground structure to overcome the disadvantages of the prior art. [New content] The main purpose of this creation is to provide a planar type m, which describes the defect grounding structure on the ground plane of the substrate, and the signal error rate of the terminal system. In order to achieve the frequency response of the stop band and effectively reduce the radio frequency, the main purpose of the above is to provide a planar chopper with a defective ground structure, which comprises a substrate; a plurality of s-type defect ground structures, · And a transmission line. The substrate has a H-plane and a second surface, wherein the second surface is a ground plane; the plurality of s-form defect ground structures are etched on the second surface of the substrate and the transmission line has a ---RF The signal input port and the second RF signal output port are sub-arranged on the first surface of the substrate; wherein the plurality of (four) form defect ground structures are located directly below the transmission line. According to the present invention, a feature of a planar money waver having a defective ground structure, wherein the plurality of defective ground structures are groove lines having characteristic impedance. According to the planar filter red-feature of the present invention having a defective ground structure, the length of the plurality of defect grounding is the length of the guided wave at the mosquito rate. 7 M312785 In order to make the above and other purposes, features, and advantages of the present invention more obvious and easy to understand, the following is a few difficult examples, and the details are as follows. [Embodiment] Although, the present invention can be expressed in different forms of the embodiment 'but the one shown in the drawings and the following t is the preferred embodiment of the creation, and please understand the disclosure of this article. The present invention is an example of the present invention and is not intended to limit the present invention to the specific embodiments illustrated and/or described. Referring to Figure 1, there is shown a perspective view of a planar filter 100 having a defective ground structure. The planar filter 1 具有 having a defective ground structure includes a substrate 30; a plurality of defective ground structures; and a transmission line 2〇. The substrate 3 has a first surface 31 and a second surface 32. The second surface 32 is a ground plane. The plurality of defective ground structures are etched in the S-like form on the second surface 32 of the substrate 3 The transmission line 20 has a first RF signal input port 21 and a second RF signal wheel _ 22, and is disposed on the first surface 31 of the substrate 30. It should be noted that the substrate 30 may be FR4, RT-Duroid Series, Al2〇3, R〇Series, high temperature co-fired ceramic iL low> co-fired ceramics, tantalum dielectric material, low dielectric material and Any of the substrates 30 in the group of semiconductors. The plurality of S-type defect grounding structures 1 is a slot line having a characteristic impedance, and the physical length is determined by a guide-wavelength at a frequency of finding, and the plurality of classes s The form defect ground structure 10 is located directly below the transmission line 2〇. It should be noted, however, that the plurality of S-type defect ground structures 1 〇 may also be etched under the first RF signal to enter the bee 8 M312785 21 and the second RF signal output port 22 . The transmission line 20 is composed of micro m 飧 + _ money, and the transmission line 2 〇 _ can also be parallel to t filter, step impedance type coffee, ring private coffee or double relay, etc. For example, according to the embodiment of the present invention, the transmission line 2 〇 2 is a wire entanglement, and the transmission line 2 〇 can also be any filter element formed by a microstrip line. The transmission line 20 has a county-to-half wavelength; the typhoon-radio frequency signal input 璋 and the __ 埠 埠 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In a preferred embodiment of the present invention, the plurality of S-type defect ground structures 10 are preferably rotated within a distance of 〇 〇 〇 〇. For the good H-rated filter, we will first design a single-class $form defect = structure 1〇 structure. Please refer to Figure 2, which shows the single-type s-form defect grounding structure. Composition. The 5 s-type defect grounding structure is cut on the second surface 32 of the substrate 3A. Its structural parameters are s 〇 6 with, g for imm, a for 8 ug, and two for 仏m. The structural parameters are designed to be used in the frequency summation to generate the deceleration pole and the second attenuation pole. The length of the $-type defect grounding structure is determined by the length of the first-attenuation limit--wavelength...2), and the second attenuation is the s-value of the S-type grounding structure 1G. The long case I is further 'in the structural length of the S-type defect grounding structure 1G, as long as it is: 1M /! _ 1, 2, 3, ...) doubling wavelength, can be engraved in the planar filtering The substrate* face 32 of the device is used to generate the frequency characteristics of the stop band. Since the $-type defect grounding structure 10 is engraved on the second surface 32 of the substrate 3, an anti-resonance point (field_, combined structure, and the like) can be generated. M312785 In this embodiment, the s-type defect grounding structure 1〇 is designed at different attenuation poles and arranged periodically to generate a frequency response with a wide band. With this characteristic, we can apply it in various In the filter component with harmonic response, please refer to Figure 3, which shows the equivalent circuit diagram of the single-type S-type defect grounding structure 10 of the creation. The component parameters are L = 259nH, c = 〇6pF, l2 =-〇46nH, and C2=-2.06pF. The component parameters are designed at frequencies of 4 GHz and 5 GHz to produce a 'Hai-Attenuation pole without a second attenuation surface. The equivalent circuit is equivalent to _ even complex A parallel p-vibrator is equivalent to a first-order Butterworth low-pass prototype [as in Formula (1) Qing. The & is the input impedance of the Buffalo low-pass _ The characteristic impedance of the transmission line 2〇.
XL = o;,Z0g1XL = o;, Z0g1
(1) (2) 公式(2)為該複數個並聯共振器之輸入阻抗公式。其中&為該複數個並 聯共振器的輸入阻抗，ω。為中心頻率，％為施頻率截止點，以及 gl為一階巴特沃夫低通離型元件值。假設在共振的情況下；(1) (2) Equation (2) is the input impedance equation for the complex parallel resonators. Where & is the input impedance of the plurality of parallel resonators, ω. For the center frequency, % is the frequency cutoff point, and gl is the first order Butterworth low pass release component value. Assume that in the case of resonance;
貝丨J ω = o XLcBellow J ω = o XLc
22>。22>.
⑶ (4) L--^_ (5) 4π2ίχ 由公式(4)與(5)便可萃取峰·健聯共_之敎電容c及電感l M312785 t,數個類s形式缺陷接地結構1〇所產生的反共振效應，可用來 图到見止帶的特性。請參照第4圖，其所示為本創作之實測頻率塑應 :::右可明顯看_率2.4咖 2上職，本_之難有_接地結構之平面式毅器卿， V 3<)恤肋，_細_s職祕地結構 —之第⑽32。晴靴術數，可產生 之二/應’利用此—特性’可達到抑制濾波器之譜波塑庫 效果’有效降低射頻前端系統之信號錯誤率。 … 雖然本創作已以前述較佳實施例揭示，妙m田 作’任何熟習此技藝者，在不脫離本創作之二限定本創 種之更動娜改。如增_，都侧^ 可作各 不會破壞此創作的精神。因 工、’> -、、父化，而 範圍所界定者為準。 ij作之保護範圍當視後附之申請專利(3) (4) L--^_ (5) 4π2ίχ From equations (4) and (5), it is possible to extract the peaks, the joints, the capacitances c and the inductances, M312785 t, and several types of s-form defect ground structures. The anti-resonance effect produced by 〇 can be used to see the characteristics of the band. Please refer to Figure 4, which shows the measured frequency of the creation of the creation::: The right can be clearly seen _ rate 2.4 coffee 2 on the post, this _ is difficult _ ground structure of the plane type Yi Chuang, V 3 < ) ribs, _ fine _s secret structure - the first (10) 32. The number of clear boots can produce the second/should use this feature to achieve the effect of suppressing the spectral waveform of the filter, effectively reducing the signal error rate of the RF front-end system. ... Although the present invention has been disclosed in the preferred embodiment described above, any of those skilled in the art will be able to change the invention without departing from the scope of the present invention. If you increase _, you can do it all without destroying the spirit of this creation. Due to work, '> -, parentalization, and the scope is defined. The scope of protection of ij is attached to the patent application
11 M312785 【圖式簡單說明】 圖1顯示為本創作之具有缺陷接地結構之平 … 十面式濾波器之立體圖。 圖2顯不為本創作之單一類S形式缺陷接地結構之結構圖。 圖3顯示為本創作之單一類S形式缺陷接地結構之等效電路圖。 圖4顯示為本創作之實測頻率響應圖。 【主要元件符號說明】 100具有缺陷接地結構之平面式渡波器 1〇類s形式缺陷接地類結構 2〇傳輪、線21第-射頻信號輪入埠22第二射頻信號輪出璋 3〇基板31第一表面32第二表面11 M312785 [Simple description of the diagram] Figure 1 shows a perspective view of a flat-top filter with a defective grounding structure. Figure 2 shows the structure of the single-type S-type defect grounding structure of this creation. Figure 3 shows the equivalent circuit diagram of the single-type S-type defect grounding structure of this creation. Figure 4 shows the measured frequency response plot for this creation. [Main component symbol description] 100 planar ferrite with defective ground structure 1 s s form defect grounding structure 2 〇 transmission wheel, line 21 first - RF signal wheel 埠 22 second RF signal wheel 璋 3 〇 substrate 31 first surface 32 second surface
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