TWM333000U - Chip type static electricity protector with overload protection function - Google Patents

Chip type static electricity protector with overload protection function Download PDF

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Publication number
TWM333000U
TWM333000U TW96217254U TW96217254U TWM333000U TW M333000 U TWM333000 U TW M333000U TW 96217254 U TW96217254 U TW 96217254U TW 96217254 U TW96217254 U TW 96217254U TW M333000 U TWM333000 U TW M333000U
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TW
Taiwan
Prior art keywords
protection function
body portion
main body
overvoltage protection
inner electrode
Prior art date
Application number
TW96217254U
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Chinese (zh)
Inventor
Yi-Lin Wu
Sheng-Fu Su
Hui-Ming Feng
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Inpaq Technology Co Ltd
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Publication date
Application filed by Inpaq Technology Co Ltd filed Critical Inpaq Technology Co Ltd
Priority to TW96217254U priority Critical patent/TWM333000U/en
Publication of TWM333000U publication Critical patent/TWM333000U/en

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Description

M333000 八、新型說明: 【新型所屬之技術領域】 本創作係有關一種具過電壓保護功能之晶片型靜 電保護元件’特別是指將ESD靜電放電保護元件導入 〇VP過電壓保護元件,使二者的優點結合,以便電子產 品朝向輕、薄、點、小的理念發展,使產品更趨迷你化。 【先前技術】 習見之積層式變阻器(MLV),如第1圖與第2圖所示 ,包括一主體部份10,一組分別從主體部份之兩側端延 伸到主體部份内部的内電極101、102、103、104....... 設於主體部份兩端的端電極20,以及設於主體部份頂面 之被覆層30,其中,主體部份係以9〇以上摩爾百分比( mole%)的氧化辞(Zn〇)為主成分,混合1〇摩爾百分 比(m〇le%)以下的其他金屬,諸如鈷(Co)、錳(Mn )祕(Bi)、録(sb)、鉻(Cr)、鎳(Ni)、鈦(Ti)、 錫(Sn)、鑭(La)、鈥(Nd)、镨(pr)、鋇(Ba)、鎂 (Mg)、鈽(Ce)、硼(Bi)等的氧化物作為添加劑,以 硝’酸錯〔αι2 ( Ν〇3) χ)〕、玻璃(Glass)、二氧化矽( Sl〇2 )等為燒結助劑(flux ),以金(Au )、銀(Ag )、 鈀(Pd)、翻(Pt)、铑(Rh)等金屬,或其任兩者之合 至作為内電極(internal electrode ) 101、1〇2、1〇3、… • · · 〇 101 、 102 、 i述之習見積層式變阻器,其内電極 5 M333000 103、104之間的重疊區域A、B、c,即是、'作用區域〜 作用區域具有彡,纟 A 了交之琶阻作用,同時兼具電容特性。而 用區域的結構乃如第2圖所示’氧化辞(Zn〇)晶粒 乃緊密佈列於兩個内電極101與102; 102與103; 103 與104相重疊的區域之間。 、上述習見之積層式變阻器,一般係利用改變作用區 域的材料配比、厚度及推疊層數,來控制元件的崩潰電 壓(Vb,breakdown voltage)、抗突波(Surge)能力及元 的電容值(Capacitance)。 惟上述利用改變作用區域之材料配方來改善靜電 防護能力的方式並不妥當,#作龍域的材料配方被= .變^會影響到過電壓保護的能力與電性表現。 【新型内容】 創作人有鑑於前述先前技術之缺點,乃依 種過電流保護元件之製造經驗和技術累積,針對上述缺 失悉心研究各種解決的方法,在經過不斷的研究: 與改良後,終於開發設計出太劓从 u Λ % 又寸出本創作,期能摒 所產生之缺失。 工&彳克術 因此創作旨在提供-種具過電壓保護功能之曰 片型靜電保護元件,於製作時先使中間層内電極二: 導通,之後再利用雷射切割、切割機…等切割方= 兩端導通的内電極切割分離’切割後形成 為 空氣室,而具備ESD靜電放電保護之功能者。成為中 6 M333000 【圖式簡單說明】 第1圖為習見積層式變阻器(MLV)之局部剖面圖。 第2圖為習見積層式變阻器(MLV)之縱剖面圖。 第3圖為本創作之剖面圖。 【主要元件符號說明】 10 :主體部份 101、102、103、104 :内電極 _ 20 :端電極 3 0 :被覆層 1 :主體部份 21、22、23、24、25、26 :電極層 3 :空氣放電氣室 4 :保護層 31、32 :端電極M333000 VIII. New description: [New technical field] This is a kind of wafer type electrostatic protection component with overvoltage protection function. In particular, it refers to the introduction of ESD electrostatic discharge protection component into 〇VP overvoltage protection component. The advantages of the combination, so that the electronic products toward the light, thin, point, small concept development, so that the product is more miniaturized. [Prior Art] A laminated varistor (MLV), as shown in Figs. 1 and 2, includes a body portion 10 extending from both side ends of the body portion to the inside of the body portion, respectively. Electrodes 101, 102, 103, 104.... terminal electrodes 20 disposed at both ends of the body portion, and a coating layer 30 disposed on the top surface of the body portion, wherein the body portion is more than 9 inches The percentage (mole%) of the oxidized word (Zn〇) is the main component, and other metals such as cobalt (Co), manganese (Mn), and (b) are mixed under a mole percent (m〇le%). ), chromium (Cr), nickel (Ni), titanium (Ti), tin (Sn), lanthanum (La), yttrium (Nd), yttrium (pr), barium (Ba), magnesium (Mg), cerium (Ce ), an oxide such as boron (Bi) as an additive, and a sintering aid (flux) such as nitric acid [αι2 ( Ν〇3) χ), glass (Glass), and cerium oxide (Sil2). a metal such as gold (Au), silver (Ag), palladium (Pd), turn (Pt), rhenium (Rh), or a combination thereof, to the internal electrode 101, 1 2 1〇3,... • · · 〇101, 102, i In the laminated varistor, the overlapping areas A, B, and c between the internal electrodes 5 M333000 103, 104, that is, the 'active area~ the active area has 彡, 纟A has a 琶 resistance, and has both capacitive characteristics. . The structure of the region is as shown in Fig. 2, and the Zn 〇 grains are closely arranged between the regions where the two internal electrodes 101 and 102; 102 and 103; 103 and 104 overlap. The above-mentioned laminated varistor generally controls the component's breakdown voltage (Vb), anti-surge capability and element capacitance by changing the material ratio, thickness and number of layers of the active region. Value (Capacitance). However, the above method of using the material formula of the changing action area to improve the electrostatic protection ability is not appropriate, and the material formula of the dragon domain is affected by the overvoltage protection capability and the electrical performance. [New content] In view of the shortcomings of the aforementioned prior art, the creator is based on the manufacturing experience and technology accumulation of the overcurrent protection component, and carefully studies various solutions to the above-mentioned deficiencies. After continuous research and improvement, the design is finally developed. Out of the 劓 劓 from u Λ % and instinct of this creation, the period can be produced by the lack of. Therefore, the work & gram is designed to provide a smash-type electrostatic protection element with over-voltage protection function. In the production process, the inner layer electrode 2 is turned on, then the laser cutting, cutting machine, etc. are used. Cutting side = the inner electrode that is turned on at both ends is cut and separated'. It is formed into an air chamber after cutting, and has the function of ESD electrostatic discharge protection. Become the middle 6 M333000 [Simple description of the diagram] The first picture is a partial cross-sectional view of the see-through laminated varistor (MLV). Figure 2 is a longitudinal section of a conventional laminated varistor (MLV). Figure 3 is a cross-sectional view of the creation. [Description of main component symbols] 10: main body parts 101, 102, 103, 104: inner electrode _ 20: terminal electrode 3 0 : coating layer 1: main body parts 21, 22, 23, 24, 25, 26: electrode layer 3: air discharge plenum 4: protective layers 31, 32: terminal electrodes

Claims (1)

M333000 :九、申請專利範圍: ^月ϋ 種具過電壓保護功能之晶片型靜電保護元件,包 括: 一主體部份,係使用氧化鋅作為主要材料; 多層内電極層,係疊印形成於主體部份之内; 一保護層,係形成於主體部份的最上方; 二端電極,係設於主體部份的兩側; •其特徵在於:上述之多層内電極層’其中間部份 ·.之内電極層係和主體部份兩側之端電極同時導通,該 兩端導通之電極層的局部段落並形成有一間距,以作 為空氣放電氣室。 -2.如申請專利範圍第1項之具過電壓保護功能之晶片型 靜電保護元件’其中所述之主體部份亦得使用氧化銘 作為主要材料。 3·如申請專利範圍第1項之具過電壓保護功能之晶片型 I 靜電保護元件,其中所述之主體部份,其各電極層之 間為作用區域,作用區域的厚度為10至100微米。 4·=申請專利範圍第1項之具過電壓保護功能之晶片型 淨電保遵元件’其中所述形成於内電極層之間距為1 至100微米。 5·如申請專利範圍第〗項之具過電壓保護功能之晶片型 月争笔保遵元件,其中所述之内電極層的電極材料為銀 (Ag)、銅(Cu)、翻(Pt)、銀鈀(Agpd)或金(Au)等混和 金屬電極膠。 10M333000: Nine, the scope of application for patents: ^月ϋ The chip-type electrostatic protection component with over-voltage protection function includes: a main part, which uses zinc oxide as the main material; and a multi-layer internal electrode layer, which is formed by overprinting in the main part a protective layer formed at the uppermost portion of the main body portion; the two end electrodes are disposed on both sides of the main body portion; • characterized by: the above-mentioned multilayer inner electrode layer 'intermediate portion thereof. The inner electrode layer and the terminal electrodes on both sides of the main body portion are simultaneously turned on, and the partial passages of the electrode layers which are electrically connected at both ends are formed with a space to serve as an air discharge air chamber. - 2. The wafer type electrostatic protection element having the overvoltage protection function of the first application of the patent scope is also used as the main material. 3. The wafer type I electrostatic protection element having the overvoltage protection function according to the first aspect of the patent application, wherein the main body portion has an active region between the electrode layers, and the thickness of the active region is 10 to 100 micrometers. . 4·=Patent type with overvoltage protection function of claim 1 of the patent range. The net electric shield conforming element' is formed between the inner electrode layers by a distance of 1 to 100 μm. 5. The wafer-type monthly pen-filled component with overvoltage protection function according to the scope of the patent application, wherein the electrode material of the inner electrode layer is silver (Ag), copper (Cu), turn (Pt) Mixed metal electrode paste such as silver palladium (Agpd) or gold (Au). 10
TW96217254U 2007-10-16 2007-10-16 Chip type static electricity protector with overload protection function TWM333000U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW96217254U TWM333000U (en) 2007-10-16 2007-10-16 Chip type static electricity protector with overload protection function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW96217254U TWM333000U (en) 2007-10-16 2007-10-16 Chip type static electricity protector with overload protection function

Publications (1)

Publication Number Publication Date
TWM333000U true TWM333000U (en) 2008-05-21

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Family Applications (1)

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TW96217254U TWM333000U (en) 2007-10-16 2007-10-16 Chip type static electricity protector with overload protection function

Country Status (1)

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TW (1) TWM333000U (en)

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