TWM331180U - Thick substrate structure - Google Patents

Thick substrate structure Download PDF

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Publication number
TWM331180U
TWM331180U TW96217496U TW96217496U TWM331180U TW M331180 U TWM331180 U TW M331180U TW 96217496 U TW96217496 U TW 96217496U TW 96217496 U TW96217496 U TW 96217496U TW M331180 U TWM331180 U TW M331180U
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Taiwan
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test
substrate
probe card
probe
thickness
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TW96217496U
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Chinese (zh)
Inventor
wei-xian Wang
wen-cong Li
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Chunghwa Prec Test Tech Co Ltd
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Priority to TW96217496U priority Critical patent/TWM331180U/en
Publication of TWM331180U publication Critical patent/TWM331180U/en

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  • Measuring Leads Or Probes (AREA)

Description

M331180 八、新型說明: 【新型所屬之技術領域】 本創作為一種厚片基板結構搭配垂直式探針卡,將達 成ic測試機台所需的行程高度,提供較平坦的探針接觸 面,降低探針與基板焊墊的接觸阻抗,減少測試信號的衰 減,提升1C測試頻寬與測試良率。 【先前技術】 在半導體產業的製造流程上,主要可分成1C設計、晶 圓製作、晶圓測試、1C封裝及最終測試等五大步驟。其中 所謂的晶圓測試步驟,就是對晶圓上的每晶粒進行電性檢 驗,以電測分辨出晶圓上晶粒的良莠。進行晶圓測試時, 利用晶圓探針卡的探針刺入晶粒上的接點塾(pad)而構成 電性接觸’再將經由探針所測得的測試訊號送往自動測試 設備(ATE)做分析與判斷,藉此可取得晶圓上的每顆晶粒的 電性測試結果。隨著半導體製程技術的進步,半導體元件 的尺寸愈來愈小,積體電路愈來愈精密,半導體元件從次 微米(Sub-Micro)進入深次微米(Deep Sub-Micro)的領域; 為配合半導體製程技術的演進,相關的測試驗證技術亦須 不斷提升,其中以積體電路直接相關的測試技術最為重 M331180 要,而積體電路測試卡則扮演測試技術中關鍵的角色。 由於積體電路元件的尺寸越來越小,其接腳也越來越 靠近’導致接腳間的電性寄生效應愈趨明顯,衍生出積體 電路測試卡上電性干擾衰減問題越來越嚴重,且其製程難 度也將更加精密且複雜。 身又的懸臂式探針卡(Cantilever Probe Card)是人工 植針於探針卡上,目前測點可達的最小間距為50微米,最 多可父錯擺放四排探針,在未來提高探針卡的測試密度上 將受限制 。冉加上為使探針與待測物於同一平面上有相同 的接觸力署 植針時需花較長的時間調整每一探針的針 壓,使之— 凡士 一致;同時,也會因探針的力臂長短不一,經一 一 I使用後,每根探針的應力應變,將導致每根探針不 ^崔、構I異,因而縮短探針卡的壽命。此外,因懸臂式 π十的長度較垂直式探針長,將無法滿足高速的電性測試 需求。 二解决上述懸臂式探針卡所面臨的問題,因而發展出 垂直式探斜七 、 叮卞’而垂直式探針卡搭配垂直式探針頭使用 為達成測試機台行程高度,而衍生出2—Tier探針卡 的產品,表關曾 一 、,,阅弟1圖所示;但其產品的製作困難度高,良 率也差,» 〇 1 ) 搭配的IC測試載板(7)較薄(厚度為1.55± m 於組裝迴焊時,較無法承受高溫的影響,因而迴 烊後有車父大的板彎翹變異。 M331180 由上可知,懸臂式探針卡在產品的應用上有瓶頸,而 2-Tier垂直式探針卡在製作上有其難度,本案創作人為了 解決上述習用方式所衍生的各項問題,乃亟思加以嘗試突 破傳統,並經多次苦思與實驗研究驗證後,終於開發出厚 片基板結構流程及相關的壓合技術’並考量IC測試時需承 載較大的應力,配合 HDI(High Density Interconnection) 的製程技術,創造出厚片基板結構。 【新型内容】 本創作之目的為藉由厚片基板結構搭配垂直式探針 卡,將達成1C測試機台所需的行程高度,並縮短人力植針 作業、增加產品製作良率、延長探針卡使用壽命,進一步 提供較平坦的探針接觸面,降低探針與基板焊墊的接觸阻 > 抗,減少測試信號的衰減,提升1C測試頻寬與測試良率。 為達成上述創作,需計算上、下疊層板厚,調整基板 . 疊層的匹配,利用多層板的增層壓合技術,完成厚片基板 . 結構。此製作方法,除利用膠片的多次增層壓合增加基板 厚度外,並藉膠片的韌性與整體壓合後的厚度增加基板的 機械強度,其可降低組裝迴焊後所造成的板彎翹變異量, 提供更穩定的1C測試介面。 本創作係為改善傳統懸臂式探針卡及2-Tier探針卡 7 M331180 的問題。利用垂直式探針卡來代替懸臂式探針卡的測試方 法,將可提高探針卡的測試密度,克服繁雜的植針作業, 延長探針卡使用壽命,提升產品的測試頻寬;再加上厚片 基板結構的應兩,將可降低2-Tier探針卡製作上之難度, 提供更穩定的1C測試介面。 【特點及功效】 本應用是將厚片基板結構與垂直式探針頭搭配,而形 成高厚度之垂直探針卡,應用在1C測試上,相較於其他探 針卡的應用,更具備下列優點: 1. 本應用可減少植針的人力作業及工時,並增加探針 卡使用壽命。 2. 本應用可避免組裝迴焊後造成的板翹及平坦度之變 異。 3. 本應用可提高1C測試時的穩定度。 4. 本應用可滿足高密度1C測試的需求。 5. 本應用可降低探針與測試焊墊的接觸阻抗,減少測 試信號的衰減,提升產品的測試頻寬,進而提升產 品測試良率。 上述詳細說明乃針對本應用實施於1C測試,凡未脫離 本創作技藝精神所為之等效實施或變更,均應包含於本案 M331180 之專利範圍中。 【實施方式】 為使能對本創作之目的,形狀構造裝置特徵及功效作 更進一步的認識與瞭解,茲舉實施例配合圖示,詳細說明 如下: 參閱第2圖所示本創作一實施例之放大示意圖其係一 種「厚片基板結構」,其特徵為利用垂直式探針卡來代替懸 臂式探針卡的測試方法,將可提高探針卡的測試密度,克 服繁雜的植針作業,延長探針卡使用壽命,提升產品的測 试頻寬,再加上厚片基板(11),將可降低2-Tier探針卡製 作上之難度’提供更穩定的Ic測試介面。另外可提高測試 載板的使用壽命。倘若須考量效率時,則可採多晶測試 (M祕Dut Test)的設計,搭配厚片基板⑴),該厚片基板厚 度範圍2〜5ππη,將可達到最大的效益。 該厚片基板⑼上板須要靠錫球⑹來進行ic測試母板 ⑺和IC測試載板連結的組襄。通常採迴焊⑽㈣,使錫 球軟化再連結組裝。料裝迴焊時,厚片基板可承受高溫, 因而迴焊後無板彎龜變異。 厚片基板需计异上、下疊層板厚,調整基板疊層的匹 配,利用多層板的增制合技術,完成厚片測試載板⑴)。 9 M331180 此製作方法’餐閱第3A圖至第3C圖為不同的厚片基板結 構的結構圖所示,除利用膠片(n)的多次增層壓合增加基板 厚度外,並藉膠片(13)的韌性與整體壓合後的厚度增加基板 的機械強度,其可降低組裝迴焊後所造成的板彎翹變異 f,提供更稳定的1C測試介面。完成的厚片基板厚度為2 公厘到5公厘。 綜上所述,本案不僅於技術思想上確屬創新,並具備 習用之傳統方法所不及之上述多項功效,已充分符合新穎 性、創新性及實用性之法定創作專利要件,爰依法提出申 請,懇請貴局核准本件創作專利申請案,以勵創作,至 感德便。 【圖式簡單說明】 凊參閱以下有關本創作一較佳實施例之詳細說明及其 附圖,將可進一步瞭解本創作之技術内容及其目的功效; 有關該實施例之附圖為: 第1圖為垂直式探針卡的示意圖; 第2圖為厚片基板結構的示意圖;以及 第3A圖至第3C圖為不同的厚片基板結構的結構圖。 【主要元件符號說明】 M331180 2 測試載板 3 輸送板 4 待測物 6 錫球 7 測試載板 8 陶瓷座 9 探針 10 測試接點 11 厚片測試載板 12 銅羯 13 膠片 14 基板M331180 VIII. New Description: [New Technology Field] This creation is a thick substrate structure with a vertical probe card, which will achieve the stroke height required for the ic test machine, providing a flat probe contact surface and reducing The contact impedance between the probe and the substrate pad reduces the attenuation of the test signal and improves the 1C test bandwidth and test yield. [Prior Art] In the manufacturing process of the semiconductor industry, it can be divided into five major steps: 1C design, wafer fabrication, wafer testing, 1C packaging and final testing. The so-called wafer testing step is to conduct an electrical test on each die on the wafer to distinguish the grain on the wafer by electrical measurement. In the wafer test, the probe of the wafer probe card is used to pierce the pad on the die to form an electrical contact, and then the test signal measured by the probe is sent to the automatic test equipment ( ATE) analyzes and judges the electrical test results of each die on the wafer. With the advancement of semiconductor process technology, the size of semiconductor components is getting smaller and smaller, integrated circuits are becoming more and more sophisticated, and semiconductor components are moving from sub-micro to deep sub-micro (Deep Sub-Micro); The evolution of semiconductor process technology, related test and verification technology must also continue to improve, in which the test technology directly related to the integrated circuit is the most important M331180, and the integrated circuit test card plays a key role in the test technology. As the size of the integrated circuit components is getting smaller and smaller, the pins are getting closer and closer. 'The resulting electrical parasitic effects between the pins become more and more obvious, and the problem of the electrical interference attenuation on the integrated circuit test card is getting more and more. Serious, and the process difficulty will be more sophisticated and complex. The cantilever probe card (Cantilever Probe Card) is a manual needle implanted on the probe card. The minimum distance between the current measuring points is 50 micrometers, and the four rows of probes can be placed at the wrong level. The test density of the needle card will be limited.冉In order to make the probe and the object to be tested have the same contact force on the same plane, it takes a long time to adjust the needle pressure of each probe so that it is consistent with the Vase; Because the length of the force arm of the probe is different, after each use, the stress and strain of each probe will cause each probe to be different, and thus shorten the life of the probe card. In addition, because the length of the cantilever π is longer than that of the vertical probe, it will not be able to meet the high-speed electrical test requirements. Secondly, the problem of the above-mentioned cantilever probe card is solved, and thus the vertical probe 7 and 叮卞' are developed, and the vertical probe card is used with the vertical probe head to achieve the test machine stroke height, and 2 is derived. - Tier probe card products, the table Guan Zengyi,, read the brother 1 picture; but its products are difficult to produce, the yield is also poor, » 〇 1) with the IC test carrier (7) Thin (thickness of 1.55± m is less able to withstand the effects of high temperature during assembly reflow, so there is a variation of the bending of the car's large plate after the return. M331180 From the above, the cantilever probe card has application in the product. The bottleneck, and the 2-Tier vertical probe card has its difficulty in production. In order to solve the problems arising from the above-mentioned conventional methods, the creators of this case tried to break through the tradition and tried many times and experimented. After verification, the slab substrate structure process and related pressing technology were finally developed' and the large stress was required when considering the IC test. The process technology of HDI (High Density Interconnection) was used to create a thick substrate structure. content The purpose of this creation is to achieve the stroke height required for the 1C test machine by using a thick substrate structure with a vertical probe card, and to shorten the manual needle-planting operation, increase the product production yield, and extend the life of the probe card. Further providing a flat probe contact surface, reducing the contact resistance of the probe to the substrate pad, resisting, reducing the attenuation of the test signal, improving the 1C test bandwidth and the test yield. To achieve the above creation, it is necessary to calculate The thickness of the lower laminate is adjusted, and the substrate is adjusted. The matching of the laminate is performed by the lamination technique of the multilayer board to complete the structure of the slab substrate. In addition to increasing the thickness of the substrate by using multiple lamination of the film, And by the toughness of the film and the thickness after the overall pressing, the mechanical strength of the substrate is increased, which can reduce the variation of the bending of the plate caused by assembly and reflow, and provide a more stable 1C test interface. The original system is to improve the traditional cantilever type. Probe card and 2-Tier probe card 7 M331180 problem. Using the vertical probe card instead of the cantilever probe card test method will improve the test density of the probe card and overcome the complicated Needle implanting operation, prolonging the life of the probe card and increasing the test bandwidth of the product; plus the thick substrate structure of the two, it will reduce the difficulty of making the 2-Tier probe card and provide a more stable 1C test interface. [Features and Efficacy] This application combines a thick substrate structure with a vertical probe head to form a high-thickness vertical probe card, which is applied to the 1C test and is more suitable than other probe card applications. The following advantages: 1. This application can reduce the manpower and working hours of the needle and increase the life of the probe card. 2. This application can avoid the variation of the panel warpage and flatness caused by the assembly reflow. Improves stability during 1C testing. 4. This application meets the needs of high density 1C testing. 5. This application can reduce the contact impedance between the probe and the test pad, reduce the attenuation of the test signal, and increase the test bandwidth of the product, thereby improving the product test yield. The above detailed description is to be applied to the 1C test for this application, and equivalent implementations or modifications that are not departing from the spirit of the present invention are included in the scope of the patent of M331180. [Embodiment] In order to enable a further understanding and understanding of the features and functions of the shape-constructing device for the purpose of the present invention, the embodiments are described in detail with reference to the following drawings: Referring to Figure 2, an embodiment of the present invention is shown. The enlarged schematic diagram is a "thick substrate structure", which is characterized in that the vertical probe card is used instead of the test method of the cantilever probe card, which can improve the test density of the probe card, overcome the complicated needle implantation operation, and prolong the operation. The life of the probe card, increasing the test bandwidth of the product, coupled with the thick substrate (11), will reduce the difficulty of making 2-Tier probe cards' to provide a more stable Ic test interface. It also increases the life of the test carrier. If efficiency is to be considered, a polycrystalline test (Mut Dut Test) design with a thick substrate (1)) with a thickness range of 2 to 5ππη will maximize the benefits. The upper plate of the slab substrate (9) is subjected to a solder ball (6) for the ic test mother board (7) and the IC test carrier board. Usually, reflow (10) (4) is used to soften the solder balls and then assemble them. When the material is reflowed, the slab substrate can withstand high temperatures, so there is no variation of the plate bending turtle after reflow. The slab substrate needs to be different in thickness of the upper and lower laminates, and the matching of the substrate stacks is adjusted, and the slab test carrier (1) is completed by the additive manufacturing technique of the multilayer board. 9 M331180 This production method 'meal 3A to 3C is a structural diagram of different slab substrate structures, except that the thickness of the substrate is increased by multiple lamination of the film (n), and the film is used ( 13) The toughness and the thickness after the overall pressing increase the mechanical strength of the substrate, which can reduce the plate bending variation f caused by assembly reflow and provide a more stable 1C test interface. The finished slab substrate has a thickness of 2 mm to 5 mm. To sum up, this case is not only innovative in terms of technical thinking, but also has many of the above-mentioned functions that are not in the traditional methods of the past. It has fully complied with the statutory creation patent requirements of novelty, innovation and practicality. I urge you to approve the creation of a patent application for this article, in order to encourage creation, to the sense of virtue. BRIEF DESCRIPTION OF THE DRAWINGS The following is a detailed description of a preferred embodiment of the present invention and its accompanying drawings, which will further understand the technical contents of the present invention and its effects; the drawings for this embodiment are: The figure is a schematic view of a vertical probe card; FIG. 2 is a schematic view of a slab substrate structure; and FIGS. 3A to 3C are structural views of different slab substrate structures. [Main component symbol description] M331180 2 Test carrier board 3 Transfer board 4 Object to be tested 6 Tin ball 7 Test carrier 8 Ceramic holder 9 Probe 10 Test contact 11 Thick test board 12 Brass 13 Film 14 Substrate

Claims (1)

M331180 九、申請專利範圍: 1· 一種厚片基板結構,其利用膠片的多次增層遷合增加基板 厚度外,並藉勝片的韌性與整體壓合後的厚度增加基板的 機械強度,其可降低組裝迴焊後所造成的板彎翹變異量, 提供更穩定的1C測試介面。 2·如申請專利範圍第i項所述之厚片基板結構,纟中, 片基板厚度為2公厘到5公厘。 ^M331180 IX. Patent application scope: 1. A thick-film substrate structure, which uses multiple layers of film to increase the thickness of the substrate, and increases the mechanical strength of the substrate by the toughness of the winning piece and the thickness after the overall pressing. It can reduce the variation of plate bending caused by assembly reflow and provide a more stable 1C test interface. 2. The slab substrate structure as described in claim i, wherein the thickness of the substrate is from 2 mm to 5 mm. ^
TW96217496U 2007-10-19 2007-10-19 Thick substrate structure TWM331180U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455222B (en) * 2011-08-25 2014-10-01 Chipmos Technologies Inc Testing method for stacked semiconductor device structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455222B (en) * 2011-08-25 2014-10-01 Chipmos Technologies Inc Testing method for stacked semiconductor device structure

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