M322062 八、新型說明： 【新型所屬之技術領域】 本創作涉及一種用於安裝電子零件，半導體或諸如液晶顯示器 (LCD)、電漿顯示器（PDP)、冷光顯示器（ELD)等平面顯示器的異方性 導電膜的接合技術，尤指一種以雷射光束接合異方性導電膜的裝置 及方法’可以取代藉使用南溫棒來接合異方性導電膜的這種習知熱 熔接合方法。 φ 【先前技術】 通常，異方性導電膜(ACF)是藉熱固性黏結劑且在熱固性黏結劑 之中摻入拌勻微細導電球粒後，再製成一種類似雙面膠帶的導電材 ^料。使用時，將異方性導電膜(ACF)輕輕貼附到基板上，且接觸到設 . 在基板上的線路佈局的凸塊(bumps)。 此際，藉對異方性導電膜(ACF)施加高溫高壓加壓，使得實際上 有相互碰觸到的異方性導電膜(ACF)的微細導電球粒及基板上的凸塊 _ (bumps)—起遭受破壞，而一起構成電性連接，所以，電流可以經過 異方性導電膜(ACF)的微小導電球粒直達基板上的凸塊(bumps);同 時，異方性導電膜(ACF)的黏結劑會對基板上除了凸塊(bumps)部分 以外的其它不平順凹凸表面進行填補和敷平，待異方性導電膜(ACF) 的黏結劑加熱硬化後，基板上的凸塊（bumps)即藉異方性導電膜 (ACF)而彼此互相黏結一起。 換言之，異方性導電膜(ACF)是一種設有黏結劑的薄膜，且黏結 誚内邛均勻佈滿金屬粒子或外表披覆金屬物質的塑膠粒子等導電顆 M322062 ^粒（以下通稱為，，導電球粒n)。而且，在液晶顯示器的安裝過程中 ，，已經相當廣泛地藉使用這種異方性導電膜(ACF)來促成液晶顯示器 面板(Panel)與捲帶式軟板封裝(TCp)之間構成電性連接，或是促成 捲帶式軟板封裳(TCP)與印刷電路板(pcb)之間構成電性連接。 近年來，配合液晶顯示器（LCD)的技術發展，異方性導電膜 (ACF)的電性連接可靠度已經相對提高了，且異方性導電膜(ACF)的 連接間距(connection pitches)也正在逐漸變成微小化。這種發展 籲趨勢的結果，卻發展出來一種玻璃覆晶封裝（Chip 〇n Glass，c〇G) 技術，可以應用在玻璃基板上面實施裸晶組裝，使得晶片直接連接 到液晶顯示器（LCD)的玻璃基板上，或是將裸晶直接連接到液晶顯示 ， 器的面板(Panel)上。 ' 藉使用異方性導電膜(ACF)，是可以達成將兩件欲構成電性連接 的物件一起構成熱熔接合連接，其原理及使用方式，係將異方性導 電膜(ACF)放置在欲構成電性連接的兩件物件的中間之後，即對異方 鲁性導電膜(ACF)加熱及加壓，在160〜⑽。c的溫度條件下，持續對異 -方性導電膜(ACF)進行加熱1〇〜20秒，同時施予壓力2〜3MPa加壓， 使得異方性導電膜(ACF)的黏結劑因受熱而熔化，並且，藉均勻散佈 的導電球體因受到加壓破壞而促成欲構成電性連接的兩件物件的相 對且相向的電極構成電性連接，此際，緊鄰在電極之間的間隙，可 以藉異方性導電膜(ACF)的私化黏結劑將之填平。這個時候，由於異 方性導電膜(ACF)的導電顆粒係均勻散佈且彼此互相獨轉在，所以 • ’異方性導電膜(ACF)具有水平方向絕緣，但又可以促使兩件物件的 6 M322062 凸塊(bumPs)之間在垂直方向構成電性連接的特性。 ， 财’異方性導電膜⑽)使用的黏結劑，具有很高的黏結力量 ，可以維持異方性導電膜⑽）的導電顆粒與兩件物件的電極之間形 成相當堅_電性連接。所以，異方性導麵(AGF)雜輔性能， 對於異方性導電膜⑽)的電性連接可靠度，是有相當程度的影響。 在開發異方性導電膜(ACF)的初期，異方性導電膜(ACF)的黏結 劑係使用熱塑性樹脂(thermoplastic resin)為材質，例如，使用以 籲苯乙烯為主體的共聚物作為黏結劑的材質。由於熱塑性樹脂對於一 般通用的溶辦具有可溶性，所以，熱塑性樹脂關展現出具有卓 越的重複使用性(reparability)，但是，因為熱塑性樹脂的耐熱性 -不佳，且熔點又低，以致於熱塑性樹脂的黏結力量相當不好，也就 ， 是說，熱塑性樹脂的抵抗連接能力卻很高。 為此，為了提高異方性導電膜⑽)的黏結劑具有優異的連接可 罪性，最近已改使用包括環氧樹脂（ep〇xy)等熱硬化性樹脂 _ (thermosetting resin)作為異方性導電膜(ACF)的黏結劑，尤其， 熱硬化性樹脂是佈滿架橋性高分子的材料，作為黏結劑使用的時候 ’除了可以促進異方性導電膜(ACF)的黏、结劑在連接日夺可緩和發生應 力集中外，並且，亦賦與異方性導電膜(ACF)的黏結劑具有重複使用 性(rcparability)。因此，藉使用熱硬化性樹脂作為異方性導電膜 (ACF)的黏結劑時，確實可以提高異方性導電膜(ACF)的連接可靠性 ，尤其，藉均勻掺入最佳化的導電粒子種類’直徑大小及添加量到 黏結劑内部之後，異方性導電膜〇^^)確實可以獲得優異的連接可靠 M322062 ^ 性結果。 ， 因為目前的異方性導電膜(acf)已經具備優異的連接可靠性，除 了已被廣泛應用於作為液晶顯示器（LCD)的連接材料外，亦已實際廡 用於諸如電漿顯示器（PDP)或冷光顯示器（ELD)等需要大電流和高電 壓的平板顯示器上。此外，異方性導電膜(ACF)因為具有連接可靠性 、細微連接結構，及低溫連接等優異特性，除了廣泛應用於安裝液 晶顯示器（LCD)之外，亦可應用於作為組裝半導體的連接材料，例如 φ ，可應用於將晶片直接與硬式印刷電路板結合(Chip On Board)、或 應用於將晶片直接與薄膜電路板結合(Chip 〇n Fiim)等等。 當兩件欲構成電性連接的物件，藉使用習知的異方性導電膜 • (ACF)相互連接成一起的時候，根據熱硬化性樹脂的特性，在溫度、 ，壓力及時間方面都應該保持固定，因此，欲構成電性連接的物件與 異方性導電膜之間的結合表面，如圖la所示，係使用一種附設有加 熱裝置的這種南溫棒(hot bar)設備來施予高溫加壓和熱溶結合。換 籲言之，如圖la所示，異方性導電膜ι〇4的放置位置，係放置在玻璃 102與積體電路(IC)106的中間，接著，藉使用保持處於高温狀態下 的高溫棒108對玻璃102與積體電路（ic)106施予如圖式箭頭方向 的高溫加壓，使得積體電路（IC)106堅固連接到玻璃1〇2，且相互連 接成一起。 另外，習知的異方性導電膜(ACF)技術，亦可應用於將積體電路 (1C)直接連接到液晶顯示器的基板上，如圖ib所示，其接合方法包 ’ 括以下步驟： 8 M322062 S〇準備基板112的準備步驟； 52) 預先接合步驟； 輕輕貼附異方性導電膜114到基板112的凸塊112a上面； 53) 剝膜步驟； 將異方性導電膜114的保護膜114a脫離取下； 54) 對位和安置步驟； 將欲與基板112構成連接的積體電路Π6準確地放置到異方 性導電膜114的表面上，且對準基板112的凸塊112a與積體電 路116的凸塊116a之間的接合位置； 55) 熱融接合步驟； 使用高溫棒118對基板112的凸塊112a與積體電路116的凸塊 116a之間的結合表面施予高溫高壓熱熔結合連接；和 56) 接合終結步驟； 確認積體電路116已經堅固地連接到基板112上。 換言之，實施異方性導電膜114的習知接合方法的時候，如圖比 所示，異方性導電膜114是放置在正準備連接異方性導電膜114的基 板112上面，且對異方性導電膜114和基板112之間的結合表面輕輕施 予預先接合。接著，將異方性導電膜H4的保護膜114a脫離取下後， 再將包括軟性電路板(FPC)或積體電路（ic)等材料116附設到異方性 導電膜114的表面。之後，藉使用高溫棒118對基板112與材料116之 間的結合表面施予高溫高壓熱溶結合。待基板112與材料116之間的 結合表面完成熱熔結合之後，移開實施高溫高壓熱熔結合的高溫棒 9 M322062 ，U8，和檢查基板112與材料116之間的結合狀態。 、 上述的習知接合方法，在進行步驟S2的預先接合步驟的時候， 係在工作溫獅〜航下，辭連顏力約3〜5秒 ，將異方性導電膜114輕輕_到基板112上。但在進行步驟奶的主 要接s步驟的日輪，係使用面溫棒us的加熱裝置為熱源，將高溫棒 118加熱到工作溫度16〇〜2i〇°c下，對基板U2與積體電路116之間的 _結合表面施予加襲力24· 5〜58· 5MPa，且·高溫加壓大約5〜20 •秒後完成接合步驟。不過，進行步驟S5所必須施予的接合條件，係 隨著所選擇使用的異方性導電膜丨14的厚度和種類不同而有所不同。 據此，異方性導電膜(ACF)的習知接合方法，係將異方性導電膜 (ACF)先放置在兩件欲構成電性連接的物件的結合表面的中間，再藉 _高溫棒(hot bar)對疊置在最上層的物件施予均一壓力的高溫加壓， 以促使異方性導電膜(ACF )的熱硬化性樹脂黏結劑隨著高溫加壓時間 終止而逐漸硬化。待完成接合步驟之後，除了構成連接的該二物件 鲁的結合表面確實彼此連接成一起之外，加上因為異方性導電膜(acf) 的導電顆粒係均勻散佈且彼此互相獨立存在的關係，又促成已構成 連接的該二物件形成只允許單一方向電流導通的電性連接，其它方 向則形成絕緣。 此外，在異方性導電膜(ACF)的習知接合方法中，熱量係經由疊 置在最上層的物件的表面，且經過物件本身之後，熱量才傳導到達 異方性導電膜(ACF)，所以，熱導給異方性導賴(AGF)的熱量是否 滿足規定的均一分佈特性，就顯得相當重要。 M322062 然而，就使用高溫棒(hot bar)這種習知熱熔接合方法及裝置而 、 言’因為高溫棒(hot bar)其取得或調節進行熱熔接合所需的熱量， 均來自藉高溫棒(hot bar)的加熱裝置對高溫棒(hot bar)進行加熱 才能取得或得到調節，這種情況實在很難要求高溫棒(h〇1： bar)能夠 持續產生相同溫度的均一加熱，因此，高溫棒(h〇t bar)除了與加熱 裝置相接的部分以外，其它部分均都會因高度熱量消耗關係而導致 熱傳效率惡化和降低，除此之外，高溫棒(hot bar)的表面會因為高 • 溫棒(h〇t bar)在持續使用過程中受到污染弄髒，以致於很難保證高 溫棒(hot bar)還擁有重複使用的功能。 總而s之，根據使用咼溫棒(hot bar)這種習知熱熔接合方法及 - 裝置來達成連接物件的使用情形而言，這種習知熱熔接合方法確實 ^ 很難使連接物件達到最佳化的連接條件，尤其，在半自動加工過程 中應用以高溫棒(hot bar)來熱溶接合物件的時候，物件之間的連接 品質’反而取決於技術者本身的經驗和技巧。 φ 【新型内容】 因此’之所以完成本創作，即為了解決前面所述的習知熱熔接 合方法所遭遇到的現況問題和其它問題，且本創作的主要創作目的 ，即在提供一種以雷射光束接合異方性導電膜的接合裝置及方法， 在包括液晶顯示器（LCD)、電漿顯示器（pdp)或冷光顯示器（eld)等平 面顯示器應用異方性導電膜對欲連接的物件進行熱熔連接的過程中 ，可以使用雷射光束取代以加熱裝置為熱源的高溫棒(h〇t bar)和進 行熱熔接合，而且，藉精準地自動控制雷射光束的輸出，可以達到 11 M322062 只限於連接的部分進行熱熔接合，因此，可以縮短進行熱熔連接所 必要的溫度上升時間和縮短熱熔連接的施工時間，並且可以提升以 雷射光束接合異方性導電膜的連接可靠性及重複使用性。 本創作所示的以雷射光束接合異方性導電膜的接合裝置，可以 實現藉使用異方性導電膜將軟性電路板(FPC)或積體電路（IC)等材料 連接到基板(substrate)上，且本創作所示的接合裝置，包括： 一雷射光源，可以根據控制訊號而射出預定波長的雷射光束； 一雷射光傳輸裝置，藉以引導從雷射光源發射出來的雷射光束 準確地投射到進行熱熔接合的連接部分； 一夾具，提供基板(substrate)、異方性導電膜(ACF) 、及欲進行熱熔接合的材料一起疊置在夾具上面，且適用於將雷射 光傳輸裝置所引導傳輸過來的雷射光束準確地投射到欲進行熱熔接 合的材料上，以及，適用於根據控制訊號而對欲進行熱熔接合的材 料施予加壓； 一操控面板，用於操縱本創作所示的接合裝置；和 一控制器，用於控制本創作的接合裝置的整體操作，包括設定 雷射光束的強度和發射方式，以及，根據由操控面板所傳來的輸入 訊號設定夾具的加壓壓力等等。 本創作所示的以雷射光束接合異方性導電膜的接合方法，可以 實現將異方性導電膜放置在一基板(substrate)與一欲進行熱溶接合 的材料的中間，且可達成藉使用異方性導電膜將欲進行熱熔接合的 材料堅固地連接到基板(substrate)上；本創作的接合方法包括以下 12 M322062 si)射出預定波長的雷射光束； 52) 將步驟S1射出的雷射光束投射到基板(substrate)與欲進行熱 熔接合的材料上，且持續投射一段預定時間； 53) 在步驟S2的雷射光束投射時間内，對欲進行熱熔接合的材料施 予加壓；和 54) 將欲進行熱熔接合的材料連接到基板(substrate)上。 實施本創作所示的以雷射光束接合異方性導電膜的接合方法的 時候’藉基板(substrate)與欲進行熱熔接合的材料因為吸收到來自 雷射光束的熱量而被加熱，藉此可促成異方性導電膜(ACF)的黏結劑 因此受熱呈熔融狀態，以填平基板(substrate)與已熱熔接合的材料 之間的凹凸不平順表面，同時，異方性導電膜(ACF)的導電球粒因為 交到加壓而破壞，可促成異方性導電膜提供呈單一方向的導電性。 如前所述’本創作所示的接合裝置，係以雷射光束熱熔接合異 方随導電膜，且雷射光束只限於投射到欲進行熱溶接合的部分，而 雷射光束產生的熱量亦只限於由欲進行熱熔接合的部分所吸收，所 ，境種以雷射光束為熱源且應用於對異方性導電膜進行熱熔接合 的接合方法，完全取代了使用高溫棒(h〇1： bar)為熱源的這種習知熱 熔接合方法。尤其，雷射光束的熱量只限於發生在欲進行熱熔接合 的。卩分，使得接合部分的單位每面積所受到的光能量很高 ，因此， 、>奐成熱里的熱轉換效率相當優異，加上本創作可以精密控制雷射 光束的輪㈣度，可促進本創作叫射絲接合異方性導電膜的連 13 M322062 ’接ππ質’所以’使用異方性導電膜的連接可靠性及接合方法的重複 ‘使用性都相當優異，完全不會受到人為因素的影響。 此外本！丨作以雷射光束熱熔接合異方性導電膜的時候，可藉 雷射光束在瞬間之内提供所需的高能量，而且，連接異方性導電膜 所必要的/皿度亦可藉雷射光束的熱量迅速上升和達到，因此，本 創作可以明顯縮短熱熔連接的施工時間。 【實施方式】 籲 卩下，舉本創作所示的接合裝置及方法的最佳具體實施例為說 明例’並配合圖式所示的内容詳細說明本創作能夠達成的創作目的 ’和所具有的特徵及其它特點、功效。 喷參考圖2之以雷射光束接合異方性導電膜的原理，且舉使用 以雷射光束焊接非金屬或塑膠材質的穿透性焊接（transmission welding)為例來說明其原理。如圖2所示，當兩件欲構成連接的非 金屬或塑膠物件202、204完成將彼此的結合表面相互接觸一起之後 籲，再利用雷射光束206投射到物件202與物件204之間的結合表面 上，以產生焊結合表面所需的熱量。此際，最上層的物件204傳導 大部分射入塑膠或玻璃的雷射光束206，使得最下層的物件202可 吸收到由上方射入的定量雷射光束能源，並將吸收到的定量雷射光 束能源轉換成熱量，且藉所轉換成的熱量，促使物件202與物件 204之間的重疊結合表面因熱溶接合而焊接成一起，以致於物件202 與物件204之間經由被焊接的結合表面而彼此被連接成一體。 此外，非金屬和塑膠材料對於雷射光束的穿透性 14 M322062 * (Permeabili1：y)和吸收率（absorption)，係隨著使用屬於紅外線頻 、 寬的波長不同而不同’但仍可藉有效地利用非金屬和塑膠的穿透性 和月b里吸收率來達成穿透性焊接（transmission welding)。使用以 雷射光束接合異方性導電膜(ACF)的接合方法，就是利用到!^坑〇類 基礎薄膜（即杜邦公司所開發之聚亞醯胺薄膜）與銦錫氧化物薄膜 (IT0)的雷射光束吸收率、異方性導電膜(ACF)的雷射光束吸收率、 以及玻璃基板適用於傳送大多數波長屬於紅外線頻寬波長的特性， •且藉以吸收雷射光束能源再轉變成熱量以進行熱熔連接的一種接合 方法。 請參考圖3之軟性電路板(FPC)廣泛使用的kapt〇類基礎薄膜對 -於波長81Gnm雷射光束的能量吸收率分析圖。如圖3所示，能量吸 ‘收率分析圖的水平軸，係表示kapt〇類基礎薄膜層的數目，每層 kapto^_職的厚度為5〇鮮，能量吸㈣分析_垂直轴 ，係表示kapto類基礎薄膜層的雷射光束吸收率（單位％)。分析圖中 •的各個kapto類基礎薄膜層的第一個柱形圖’係分別指該^幽類基 •礎薄膜層對於波長81〇nm雷射光束的吸收率情況，分析圖中的各個 kapto類基礎薄膜層的第二個柱形圖，齡別指該㈣蝴基礎薄膜 層對於波長975nm雷射光束的吸收率。 圖4所示之方塊圖’係用來說明本創作所示的接合裝置的最佳 具體實施例。如® 4所示，本創作所示之以魏光束接合異方性導 、 電膜的接合裝置，包括： 、—雷射光源410，作為熱源使用，可以根據控制訊號而射出預定波 15 M322062 • 長的雷射光束； - 一雷射光傳輸裝置42〇，藉以引導從雷射光源410發射出來的雷射 光束準確地投射到進行熱熔接合的連接部分； 一機械爽具430，用於提供基板(substrate)、異方性導電膜(acf) 、及欲進行熱溶接合的材料一起疊置在夾具上面，且適用於將雷射 光傳輸裝置420所引導傳輸過來的雷射光束準確地投射到欲進行熱溶 接合的材料上，以及，適用於根據控制訊號而對欲進行熱熔接合的 鲁 材料施予加壓； 一操控面板440，用於操縱本創作所示的接合裝置；和 一控制器450，用於控制本創作的接合裝置的整體操作，包括設定 雷射光束的強度和發射方式，和根據由操控面板440所傳來的輸入訊 • 號設定機械夾具430的加壓壓力。 本創作所使用的雷射光源410，係使用一雷射二極體（diode laser)或一鈥纪鋁石榴石雷射（M:YAG laser)，可以根據控制器450 φ 的控制訊號射出預定強度的紅外線頻寬波長800nm〜llOOnm的雷射光 束。 本創作所使用的雷射光傳輸裝置420，包括一光纖422，用於傳 導從雷射光源410射出的雷射光束到機械夾具430 ; —固定台424，用 於支持和固定雷射光傳輸裝置420 ; —雷射光擴束器426，用於將經 由光纖422傳導過來的雷射光束擴展成適合投射的光束大小及形狀； 及一掃描驅動部（Scan Driver)428，根據控制器450的控制訊號運載 ’ 雷射光擴束器426到達預定位置，以便於對欲進行熱熔接合的材料的 16 M322062 • 連接部分投射雷射光束。 _ 不過，上述的雷射光傳輸裝置420所使用的光纖422，亦可使用 同樣具有雷射光束傳導功能的其它光學元件取代光纖422。 本創作的雷射光傳輸裝置420投射到材料上的連接部分的雷射光 束形狀’包括具預定直徑大小的點狀雷射光束（spot-shaped laser beam)、具預定長度大小的線形雷射光束（line-shaped laser beam) 、或聚焦在預定投射面積上的矩形點狀雷射光束（rectangUlar φ spot-shaped laser beam)。 而且，本創作的雷射光傳輸裝置420，係依據控制器450的控制 訊號，能夠反復投射雷射光束，且每次投射雷射光束都能準確投射 到異方性導電膜(ACF)的預定面積上。同時，為了賦與進行熱熔接合 • 的材料的連接部分擁有適當的預定連接強度，在雷射光傳輸裝置420 進行投射雷射光束的期間，機械夾具430會同時配合對進行熱熔接合 的材料的連接部分施予加壓。 ·； 本創作所使用的機械夾具430，包括一底座432、一加壓裝置434 •、及加壓驅動部436。其中，該底座432係提供給包括液晶顯示器 (LCD)面板、玻璃基板、FR4基板、FR5基板、或軟性電路板(frpc)等 各式各樣的基板404放置，及提供給異方性導電膜4〇6及欲進行熱溶 接合的材料408—起再疊置在已放置的基板4〇4的上面。 該加壓裝置434具有一光學窗434a，可提供給由雷射光傳輸裝置 420投射過來的雷射光束402通過，當雷射光束4〇2投射到最上層的欲 進行熱熔接合的材料408且與基板404進行熱熔接合的時候，該加壓 17 M322062 裝置434會對基板404及進行熱熔接合的材料408施予加壓。 該加壓驅動部436係根據控制器450的控制訊號而驅動加壓裝置 434產生適當的預定加壓壓力。 如圖4所示，欲進行熱熔接合的材料408與基板404，各自具 有相對又相向且用於構成電性連接的凸塊(bumps)4〇8a及404a。當 異方性導電膜406放置在基板404的凸塊404a與欲進行熱熔接合的 材料408的凸塊408a的中間之後，就投射雷射光束402及藉加壓裝 置434對材料408施予加壓。此際，基板404的凸塊404a與材料 408的凸塊408a之間，藉由加壓破壞異方性導電膜406的導電球粒 ，即構成單一方向電流導通的電性連接；而異方性導電膜4〇6的黏 結劑會對基板404的凸塊404a與材料408的凸塊408a之間的間隙進 行填補和敷平，使得基板404與材料408之間的連結更加堅固。 本創作的的操控面板440 ·，包括一按鍵區及一液晶顯示器（lcd) ，可以顯示本創作所示的接合裝置在控制器45〇的操控下的目前操作 情況，且經由按鍵區輸出控制訊號後，控制訊號立即傳送和輸入到 控制器450再經由控制器450操縱本創作所示的以雷射光束接合異 方性導電膜的接合裝置。 本創作的&制器450，具有接收從操控面板440的按鍵區所輸入 的數值控制，而設定工作流針的各種變數的魏，例如，可以設 定雷射光束的波長、強度、魏方纽娜_，歧錢械夾具 430的加壓£力等等，亦具有根據操控面板棚的按鍵區所輸入的控 制减’輯摘作所示的接合裝置的每—個組件進行操控的功能 18 M322062 ;並具有將操控結果及操作狀況等資訊立即傳送到操控面細，且 顯示在操控面板440的液晶顯示器上的功能。 以下，詳細制本創作所示的以雷縣束接合異方性導電膜 ⑽)的接合方法，且藉摘作所補接合方法是可以實鋪使用異 方性導電膜(ACF)將欲進行熱炫接合的材料連接到基板⑽扣她） 上。 如圖4所示，首先，將玻璃基板或軟性電路板(Ff>c)等欲進行熱 熔接合的基板404放置到機械夹具430的底座432上，次將異方性 導電膜406豐放在基板404的上面，再將欲進行熱炼接合的材料 408疊放在異方性導電膜406的上面。此際，基板4〇4與欲進行熱 熔接合的材料408之間的放置位置，必須使得基板4〇4的凸塊4〇4a 與材料408的凸塊408a相互對準且能夠相互構成電性連接。而本創 作實施對準基板404與欲進行熱熔接合的材料408之間的放置位置 ，係藉由機械手(robot)等自動設備（圖未繪)來達成。 接著，由雷射光源410根據控制器450的控制訊號射出預定波長 及預定強度又可為異方性導電膜(ACF)接合的基礎薄膜或玻璃基板的 銦錫氧化物薄膜（IT0)吸收的雷射光束。其中，雷射光源41〇可射出 波長800nm〜ll〇〇nm的雷射光束，而且，由雷射光源41〇射出的雷射光 束’可為連續性射出的雷射光束或間歇性射出的雷射光束。 雷射光源410所射出的雷射光束會被傳導到設有光纖422及反射 鏡的雷射光傳輸裝置420，在投射到最上層的欲進行熱熔接合的材料 408之前，先經由連接光纖422的雷射光擴束器426將傳導過來的雷射 19 M322062 ~ 光束擴展成適合投射的預定光束大小及形狀。 • 經過雷射光擴束器426擴束成預定光束大小及形狀的雷射光束， 會通過對於雷射光束具有报高穿透率(通常穿透率超過9〇%)的光學窗 434a之後，再投射到最上層的欲進行熱熔接合的材料4〇8，且持續投 射時間大約5〜10秒。該光學窗434a係固定在加壓裝置434上，所以 ，該加壓裝置434兼具提供經過擴束的雷射光束4〇2通過的功能、及 對基板404及進行熱熔接合的材料408施予大約250〜600 kg/cm2的預 ❿定加壓壓力的功能。 本創作的最佳具體實施例，係以最上層的欲進行熱熔接合的材 料408為基礎薄膜，且實施本創作所示的接合方法，可以實現藉使用 異方性導電膜(ACF)將這個基礎薄膜連接到有塗佈銦錫氧化物薄膜 • (IT0)的玻璃基板404上。但，根據吸收雷射光束的根源不同，本創 作有二種不同的接合方法。 第一種接合方法，係以欲進行熱溶接合的材料4〇8為基礎薄膜， #且以基礎薄膜作為吸收雷射光束的根源。這種接合方法係藉雷射光 -束402投射到基礎薄膜的頂面的時候，雷射光束402所帶的能源就類 似像高溫棒(hot bar)的功能一樣，可提供熱源給基礎薄膜，所以， 雷射光束402的能源立即被基礎薄膜吸收和轉換成熱量，且所轉換成 的熱量會立即經由基礎薄膜本身的傳導，再經過基礎薄膜下方的已 鍛上銅或金的凸塊4〇8a(厚度大約幾拾微米），而傳導到達異方性導 ’ 電膜406。在這種接合方法的實施過程中，控制使溫度上升到達預定 〜 攝氏溫度的所需時間，控制加熱異方性導電膜406的熱硬化性樹脂呈 20 M322062 ♦ 溶融狀態的所需時間，以及，控制加熱硬化已完成熱熔接合的異方 * 性導電膜406的所需時間，都由控制器450精準地操控調節雷射光束 的輸出來達成。同時，為了提高基礎薄膜的凸塊408a與玻璃基板404 的銦錫氧化物薄膜（ITO)404a之間的熱熔接合品質，在投射雷射光束 的期間内，機械夾具430的加壓裝置434會對玻璃基板404及進行熱熔 接合的基礎薄膜施予預定加壓壓力。 第一種接合方法，係以塗佈在玻璃基板4〇4上的銦錫氧化物薄膜 • UT〇)作為吸收雷射光束的根源，藉雷射光束402投射到最下層的玻 璃基板404上的時候，雷射光束4〇2立即被塗佈在玻璃基板4〇4上的銦 錫氧化物薄膜（ITO)吸收，此際，玻璃基板4〇4會傳導大多數屬於紅 -外線頻寬波長的雷射光束，而塗佈在玻璃基板404上的銦錫氧化物薄 ’膜（ITO)會吸收到局部雷射光束402的能源。因為雷射光束的每單位 面積的輸出是遠遠超過一般光束的輸出，所以，縱使銦錫氧化物薄 膜（ιτο)只是吸收到局部雷射光束402的能源，但其所吸收到的雷射 •光束能源，仍足夠轉換成所需的熱量，且所轉換成的熱量會立即由 銦錫氧化物薄膜（ITO)傳導到達異方性導電膜406。 同樣情形，在這種接合方法的實施過程中，本創作的控制器 可以精準地操細節雷射絲的輸出，所以，使溫度上升到達預定 攝氏溫度騎f咖、加熱異方轉麵棚的熱硬錄細旨呈溶融 狀態的所需_、或加熱硬化已完成舰接合的異方性導電膜猶的 所需時間，都可獲得有效的調節和控制。同理，為了提高基礎薄臈 的凸塊408a與玻璃基板404的銦錫氧化物薄膜（iT〇)4〇4a之間的熱熔 21 M322062 接合品質’在投射雷射光束的期間内，機械夾具430的加壓裝置434 會對玻璃基板404及進行熱熔接合的基礎薄膜施予預定加壓壓力。 綜上所述，本創作所示的接合方法以使用雷射二極體（di〇de laser)為熱源，確實可以實現藉使用雷射光束來接合異方性導電膜 (ACF)的目的，且可以取代藉使用高溫棒(h〇t bar)來接合異方性導 電膜(ACF)的這種習知熱熔接合方法。尤其，以本創作所示的接合方 法實施以雷射光束接合異方性導電膜(ACF)的時候，因為可精準地自 動控制雷射光束的輸出，所以，進行熱熔連接所需的施工時間可明 顯縮短的優勢，除了適用於全自動作業中提升產率外，接合異方性 導電膜的連接可靠性及接合方法的重複使用性亦可充分達成。 此外，本創作所示的接合方法，可以應用到電子領域、半導體 領域、生物科技領域及環境技術領域中的小型精密封裝。尤其，使 用本創作所示的接合錢的時候，祕準地自输制雷射光束的輸 出，可以達到只限於連接的部分進行熱熔接合，而且，在短時間内 可將溫度提制熱熔連接異雜導電麟需_定溫度，可以縮短 施工時間。所以，本創作所示的接合方法及裝置，可以提升以雷射 光束接合異方性導電膜的連接可#性及重複使祕。還有，本創作 所不的接合方献裝置，湘各種不同材料對於不同的雷射光波長 有各自不_雷射光束吸收特性的現象，還可以達成以雷射光束熱 熔接合各種不同材料的目的。 本創作的應用範圍，不是僅限定在前面所述的較佳具體實施例 而已舉凡與本別作的創作目的與所能達成的效果係構成所謂等效 22 M322062 或均等者，或不脫離本創作的精神’且屬為熟習該項技術者運用本 創作的内容而能輕易完成的各種等效附加、替代、式并白& 曰1〜及改良者，均應 屬本創作能夠涵蓋的範圍，且屬為本創作的申請專利範圍得以主張 權利的範圍 & 【圖式簡單說明】 本創作能夠達成的創作目的，和所具有的特徵及其它特點、功 效，根據詳細說明且同時配合附圖所示的内容，將會更加、、青楚和明 白0 圖la係說明-種用於實施熱雜合異方性導電膜的習知接合裝 置示意圖。 ° 圖lb係說明-種用於實施熱溶接合異方性導電膜的習知接合方 法流程圖。 圖2係說明本創作以雷射光束接合異方性導電膜的原理概念圖。 圖3係正在進行練接合的㈣在實施本_以f射光束接合異 方性導電膜的過程中吸收到雷射光束能量的能量吸收率分析圖。口 /、 圖4係根據本創作所示的接合裝置以方塊流程圖表現其中一種最 佳具體實施例的說明圖。 【主要元件符號說明】 102 …· …··玻璃 106 …·· …·積體電路 104…·· ••…異方性導電膜 108…·· …•南溫棒 112…·· …·基板 112a ·· …·凸塊 23M322062 VIII. New Description: [New Technology Field] This creation involves an installation of electronic components, semiconductors or flat-panel displays such as liquid crystal displays (LCDs), plasma displays (PDPs), and cold-light displays (ELDs). The bonding technique of a conductive film, particularly a device and method for bonding an anisotropic conductive film with a laser beam, can replace the conventional hot-melt bonding method in which an anisotropic conductive film is bonded by using a south temperature bar. φ [Prior Art] Generally, an anisotropic conductive film (ACF) is made of a thermosetting binder and is mixed with a fine conductive ball in a thermosetting binder to form a conductive material similar to double-sided tape. . When in use, attach the anisotropic conductive film (ACF) to the substrate and touch it. Bumps of the layout of the lines on the substrate. At this time, By applying high temperature and high pressure to the anisotropic conductive film (ACF), So that the fine conductive particles of the anisotropic conductive film (ACF) that actually touch each other and the bumps on the substrate are damaged, And together form an electrical connection, and so, The current can pass through the tiny conductive particles of the anisotropic conductive film (ACF) to the bumps on the substrate; Simultaneously, The adhesive of the anisotropic conductive film (ACF) fills and levels the uneven surface of the substrate other than the bumps. After the adhesive of the anisotropic conductive film (ACF) is heat-hardened, The bumps on the substrate are bonded to each other by an anisotropic conductive film (ACF). In other words, An anisotropic conductive film (ACF) is a film provided with a binder. And the conductive particles such as plastic particles, which are uniformly covered with metal particles or metal particles coated on the surface, are generally known as , Conductive pellets n). and, During the installation of the liquid crystal display, , The use of such an anisotropic conductive film (ACF) has been widely used to facilitate the electrical connection between a liquid crystal display panel (Panel) and a tape and reel package (TCp). Or it can form an electrical connection between the tape-type flexible board seal (TCP) and the printed circuit board (pcb). In recent years, With the development of liquid crystal display (LCD) technology, The reliability of the electrical connection of the anisotropic conductive film (ACF) has been relatively improved. Moreover, the connection pitches of the anisotropic conductive film (ACF) are gradually becoming smaller. This development calls for the result of the trend, But developed a glass flip chip package (Chip 〇n Glass, c〇G) technology, Can be applied to the bare metal assembly on the glass substrate, The wafer is directly connected to a glass substrate of a liquid crystal display (LCD), Or connect the bare crystal directly to the LCD display. On the panel of the panel. ' By using an anisotropic conductive film (ACF), It is achieved that two pieces of materials to be electrically connected together form a hot-melt joint. Its principle and use, After placing the anisotropic conductive film (ACF) in the middle of two objects to be electrically connected, That is, heating and pressurizing the hetero-conductive conductive film (ACF), At 160~(10). Under the temperature condition of c, Continuously heating the iso-square conductive film (ACF) for 1 to 20 seconds. At the same time, the pressure is applied to 2~3MPa, The adhesive of the anisotropic conductive film (ACF) is melted by heat, and, The conductive balls which are evenly distributed are electrically connected by the opposite and opposite electrodes of the two objects which are to be electrically connected due to the pressure damage. At this time, Immediately adjacent to the gap between the electrodes, It can be filled with a proprietary adhesive made of an anisotropic conductive film (ACF). at this time, Since the conductive particles of the anisotropic conductive film (ACF) are uniformly dispersed and mutually rotated, Therefore • ‘ anisotropic conductive film (ACF) has horizontal insulation, However, it is also possible to promote the electrical connection between the 6 M322062 bumps (bumPs) of the two objects in the vertical direction. , The adhesive used in the heterogeneous conductive film (10), Has a high bonding strength, The conductive particles of the anisotropic conductive film (10) can be maintained to form a relatively strong electrical connection with the electrodes of the two articles. and so, Heterogeneous guide surface (AGF) heterogeneous performance, For the electrical connection reliability of the anisotropic conductive film (10), There is a considerable degree of influence. In the early days of developing an anisotropic conductive film (ACF), The adhesive of the anisotropic conductive film (ACF) is made of a thermoplastic resin. E.g, A copolymer based on styrene is used as a material for the binder. Since the thermoplastic resin is soluble for general versatile dissolution, and so, The thermoplastic resin exhibits excellent reparability, but, Because the heat resistance of the thermoplastic resin - is not good, And the melting point is low, So that the bonding strength of the thermoplastic resin is quite bad, That is, says, The thermoplastic resin has a high resistance to bonding. to this end, In order to improve the adhesion of the anisotropic conductive film (10), the adhesive has excellent connection sin, Recently, a thermosetting resin such as an epoxy resin (ep〇xy) has been used as a binder for an anisotropic conductive film (ACF). especially, The thermosetting resin is a material that is covered with a bridging polymer. When used as a binder, in addition to promoting the adhesion of the anisotropic conductive film (ACF), The concentration of the knot can ease the concentration of stress during the connection. and, The adhesive also imparted to the anisotropic conductive film (ACF) has rcparability. therefore, When a thermosetting resin is used as a binder for an anisotropic conductive film (ACF), It can really improve the connection reliability of the anisotropic conductive film (ACF). especially, By uniformly incorporating the optimized conductive particle type 'diameter size and the amount added to the inside of the binder, The anisotropic conductive film 〇^^) can indeed obtain excellent connection reliability M322062 ^ Sexual results. , Because the current anisotropic conductive film (acf) already has excellent connection reliability, In addition to the connection materials that have been widely used as liquid crystal displays (LCDs), It has also been used in flat panel displays such as plasma display (PDP) or cold light display (ELD) that require high current and high voltage. In addition, Anisotropic conductive film (ACF) has connection reliability, Fine connection structure, Excellent characteristics such as low temperature connection, In addition to being widely used in the installation of liquid crystal displays (LCDs), It can also be applied as a connecting material for assembling a semiconductor, For example φ , Can be applied to the chip directly to the hard printed circuit board (Chip On Board), Or applied to the wafer directly bonded to the thin film circuit board (Chip 〇n Fiim) and so on. When two pieces are to be electrically connected, By using conventional anisotropic conductive films • (ACF) when they are connected together, According to the characteristics of the thermosetting resin, At temperature, , Both pressure and time should remain fixed. therefore, To form a bonding surface between the electrically connected object and the anisotropic conductive film, As shown in Figure la, This type of hot bar apparatus with a heating device is used to apply high temperature pressurization and hot melt bonding. In exchange for words, As shown in Figure la, The placement position of the anisotropic conductive film ι〇4, The system is placed between the glass 102 and the integrated circuit (IC) 106. then, The glass 102 and the integrated circuit (ic) 106 are subjected to high-temperature pressurization in the direction of the arrow by using the high temperature rod 108 which is kept at a high temperature. Making the integrated circuit (IC) 106 firmly connected to the glass 1〇2, And connected together. In addition, Conventional anisotropic conductive film (ACF) technology, It can also be applied to directly connect the integrated circuit (1C) to the substrate of the liquid crystal display. As shown in Figure ib, The joining method package includes the following steps: 8 M322062 S〇 preparation step of preparing the substrate 112; 52) a pre-joining step; Gently attaching the anisotropic conductive film 114 to the bump 112a of the substrate 112; 53) stripping step; Removing the protective film 114a of the anisotropic conductive film 114 from the removal; 54) alignment and placement steps; The integrated circuit Π6 to be connected to the substrate 112 is accurately placed on the surface of the anisotropic conductive film 114, And aligning the bonding position between the bump 112a of the substrate 112 and the bump 116a of the integrated circuit 116; 55) a hot melt bonding step; Applying a high temperature and high pressure hot melt bonding connection to the bonding surface between the bump 112a of the substrate 112 and the bump 116a of the integrated circuit 116 using the high temperature bar 118; And 56) the joint termination step; It is confirmed that the integrated circuit 116 has been firmly connected to the substrate 112. In other words, When the conventional bonding method of the anisotropic conductive film 114 is performed, As shown in the figure, The anisotropic conductive film 114 is placed on the substrate 112 which is being prepared to be connected to the anisotropic conductive film 114. And the bonding surface between the anisotropic conductive film 114 and the substrate 112 is gently pre-bonded. then, After the protective film 114a of the anisotropic conductive film H4 is removed, A material 116 including a flexible circuit board (FPC) or an integrated circuit (ic) is attached to the surface of the anisotropic conductive film 114. after that, The high temperature and high pressure hot melt bonding is applied to the bonding surface between the substrate 112 and the material 116 by using the high temperature rod 118. After the bonding surface between the substrate 112 and the material 116 is hot melt bonded, Remove the high temperature rod 9 M322062 that is combined with high temperature and high pressure hot melt. U8, And checking the bonding state between the substrate 112 and the material 116. , The above conventional joining method, When the pre-joining step of step S2 is performed, Is working in the warm lion ~ aeroplane, Resigning Yan Li about 3 to 5 seconds, The anisotropic conductive film 114 is lightly _ onto the substrate 112. But in the day of the main step of the milk step, A heating device using a surface temperature bar us is used as a heat source. The high temperature rod 118 is heated to a working temperature of 16 〇 2 2 〇 ° c, Applying an attack force of 24·5 to 58·5 MPa to the _ bonding surface between the substrate U2 and the integrated circuit 116, And the high temperature pressurization is about 5 to 20 seconds to complete the bonding step. but, Carry out the bonding conditions that must be applied in step S5, The system differs depending on the thickness and type of the anisotropic conductive film 14 to be used. According to this, a conventional bonding method of an anisotropic conductive film (ACF), The anisotropic conductive film (ACF) is placed in the middle of the bonding surface of the two objects to be electrically connected. Then, by using a hot bar, the high temperature pressure is applied to the uppermost layer of the object, and the uniform pressure is applied. The thermosetting resin binder which promotes the anisotropic conductive film (ACF) is gradually hardened as the high-temperature pressurization time is terminated. After the bonding step is completed, Except that the bonding surfaces of the two objects constituting the connection are indeed connected to each other, In addition, since the conductive particles of the anisotropic conductive film (acf) are uniformly dispersed and are independent of each other, Further facilitating the two objects that have formed a connection to form an electrical connection that allows only a single direction of current conduction. Other directions form insulation. In addition, In a conventional bonding method of an anisotropic conductive film (ACF), The heat is passed through the surface of the object stacked on the top layer. And after passing the object itself, Heat is transferred to the anisotropic conductive film (ACF), and so, Whether the heat conduction to the heterogeneous derivative (AGF) meets the specified uniform distribution characteristics, It is very important. M322062 However, In the case of a conventional hot-melt joining method and apparatus using a hot bar, Words because of the hot bar that takes or regulates the heat required for hot-melt bonding, Both are heated by a hot bar to heat or heat the hot bar. This situation is really difficult to ask for high temperature rods (h〇1: Bar) is capable of consistently producing uniform heating at the same temperature, therefore, The high temperature bar (h〇t bar) is in addition to the part that is connected to the heating device. In other parts, the heat transfer efficiency deteriorates and decreases due to the high heat consumption relationship. Other than that, The surface of the hot bar will be contaminated by the high temperature bar (h〇t bar) during continuous use. It is difficult to ensure that the hot bar also has reusable functions. In total, According to the conventional hot-melt joining method and apparatus using a hot bar, the use of the connected article is achieved. This conventional hot melt bonding method does make it difficult to achieve optimal connection conditions for the connected objects. especially, When using a hot bar to thermally dissolve the object during semi-automatic processing, The quality of the connections between objects depends on the experience and skill of the technicians themselves. Φ [new content] Therefore, the reason for completing this creation, That is, in order to solve the current problems and other problems encountered in the conventional heat fusion bonding method described above, And the main creative purpose of this creation, That is, a bonding apparatus and method for bonding an anisotropic conductive film with a laser beam are provided, Including liquid crystal displays (LCDs), A flat panel display such as a plasma display (pdp) or a cold light display (eld) uses an anisotropic conductive film to thermally fuse the object to be joined. A laser beam can be used instead of a high temperature rod (h〇t bar) with a heating device as a heat source and a hot melt joint. and, By precisely controlling the output of the laser beam precisely, Can reach 11 M322062 only for the connected part for hot melt bonding, therefore, It can shorten the temperature rise time necessary for hot melt connection and shorten the construction time of hot melt connection. Moreover, the connection reliability and reusability of bonding the anisotropic conductive film with the laser beam can be improved. The bonding device for bonding an anisotropic conductive film with a laser beam as shown in the present writing, It is possible to connect a material such as a flexible circuit board (FPC) or an integrated circuit (IC) to a substrate by using an anisotropic conductive film, And the joint device shown in this creation, include: a laser source, A laser beam of a predetermined wavelength may be emitted according to the control signal; a laser light transmission device, Thereby guiding the laser beam emitted from the laser light source to be accurately projected to the joint portion for performing the heat fusion bonding; a fixture, Providing a substrate, Anisotropic conductive film (ACF), And the material to be hot-melt bonded is stacked on the fixture, And it is suitable for accurately projecting the laser beam guided by the laser light transmission device onto the material to be thermally welded. as well as, Suitable for applying pressure to a material to be hot-melt-bonded according to a control signal; a control panel, Used to manipulate the joint device shown in this creation; And a controller, The overall operation of the joint device used to control the creation, Including setting the intensity and launch mode of the laser beam, as well as, The pressing pressure of the jig is set according to the input signal transmitted from the control panel. The bonding method of bonding an anisotropic conductive film by a laser beam as shown in the present writing, It is possible to place the anisotropic conductive film in the middle of a substrate and a material to be thermally fused. And it can be achieved that the material to be thermally fusion bonded is firmly connected to the substrate by using an anisotropic conductive film; The bonding method of the present invention includes the following 12 M322062 si) emitting a laser beam of a predetermined wavelength; 52) projecting the laser beam emitted from step S1 onto a substrate and a material to be thermally bonded, And continue to project for a predetermined period of time; 53) During the laser beam projection time of step S2, Pressurizing the material to be hot melt joined; And 54) Attach the material to be hot melt bonded to the substrate. When the bonding method of bonding an anisotropic conductive film by a laser beam as shown in the present invention is carried out, the material to be thermally bonded by the substrate is heated by absorption of heat from the laser beam, Thereby, the adhesive of the anisotropic conductive film (ACF) can be promoted, so that it is heated and melted. To fill the uneven surface between the substrate and the material that has been thermally fused, Simultaneously, The conductive pellet of the anisotropic conductive film (ACF) is destroyed by the pressurization, The anisotropic conductive film can be promoted to provide conductivity in a single direction. As described above, the joint device shown in this creation, The laser beam is thermally fused to join the opposite side with the conductive film. And the laser beam is limited to the portion to be thermally coupled. The heat generated by the laser beam is only absorbed by the part to be thermally bonded. , a bonding method in which a laser beam is used as a heat source and is applied to heat-sealing an anisotropic conductive film, Completely replaced the use of high temperature rods (h〇1: Bar) is a conventional heat fusion bonding method for heat sources. especially, The heat of the laser beam is limited to the heat fusion bonding that is to be performed. Score, The unit of the joint portion receives a high amount of light energy per area, therefore, , > The heat conversion efficiency in the heat is very good. Plus this creation can precisely control the wheel (four) degrees of the laser beam, It is possible to promote the connection of the anisotropic conductive film of the present invention. The connection reliability of the anisotropic conductive film and the repetition of the bonding method are excellent. It is completely unaffected by human factors. Also this! When the laser beam is thermally fused to the anisotropic conductive film, The laser beam can be used to provide the required high energy in an instant, and, The necessary / degree of the connection of the anisotropic conductive film can also be rapidly increased and reached by the heat of the laser beam. therefore, This creation can significantly shorten the construction time of the hot melt connection. [Embodiment] BEST MODE FOR CARRYING OUT THE INVENTION The best embodiment of the bonding apparatus and method shown in the present application is a description of the example and the contents of the drawing are used to explain in detail the creative purpose that the creation can achieve and the features and other features, efficacy. Spraying the principle of the laser beam bonding the anisotropic conductive film with reference to FIG. 2, The principle of using a laser beam welding non-metallic or plastic material for transmission welding is taken as an example. as shown in picture 2, When two pieces of non-metallic or plastic object 202 are to be joined, 204 is completed after the bonding surfaces of each other are brought into contact with each other, The laser beam 206 is again projected onto the bonding surface between the object 202 and the object 204, To generate the heat required to weld the bonded surface. At this time, The uppermost object 204 conducts most of the laser beam 206 that is incident on the plastic or glass. The lowermost object 202 is allowed to absorb the quantitative laser beam energy incident from above. Converting the absorbed quantitative laser beam energy into heat, And by the heat that is converted, The overlapping bonding surfaces between the article 202 and the article 204 are caused to be welded together by hot melt bonding. So that the object 202 and the object 204 are connected to each other integrally via the welded bonding surface. In addition, Penetration of non-metallic and plastic materials for laser beams 14 M322062 * (Permeabili1: y) and absorption rate (absorption), With the use of infrared frequency, The wide wavelengths vary and differs, but transmission welding can be achieved by effectively utilizing the penetration of non-metals and plastics and the absorption rate in months b. Using a bonding method in which an anisotropic conductive film (ACF) is bonded by a laser beam, It is used! ^The absorption rate of the laser beam of the base film (ie, the polyimide film developed by DuPont) and the indium tin oxide film (IT0), Laser beam absorption rate of anisotropic conductive film (ACF), And the glass substrate is suitable for transmitting the characteristics that most wavelengths belong to the infrared bandwidth wavelength. • A bonding method by which the laser beam energy is absorbed and converted into heat for hot melt joining. Refer to the Kapt〇-based base film pair widely used in the flexible circuit board (FPC) of Figure 3 for the energy absorption rate analysis of the 81 Gnm laser beam. As shown in Figure 3, Energy absorption ‘the horizontal axis of the yield analysis chart, Is the number of base film layers of kapt〇, The thickness of each layer of kapto^_ is 5 〇 fresh, Energy absorption (four) analysis _ vertical axis, It is the laser beam absorptivity (unit%) of the kapto-based base film layer. The first histogram of each kapto-based base film layer in the analysis chart refers to the absorption rate of the laser beam with a wavelength of 81 〇 nm, respectively. Analyze the second histogram of each kapto-based base film layer in the diagram, Age refers to the absorption rate of the (4) butterfly base film layer for a 975 nm laser beam. The block diagram shown in Figure 4 is used to illustrate the preferred embodiment of the engagement device shown in this creation. As shown in ® 4, The Wei beam is used to join the anisotropic guide, Electromembrane bonding device, include: , - a laser source 410, Used as a heat source, The predetermined wave can be emitted according to the control signal 15 M322062 • Long laser beam; - a laser light transmission device 42〇, Thereby guiding the laser beam emitted from the laser light source 410 to be accurately projected to the connection portion for performing the heat fusion bonding; a mechanical cool 430, Used to provide a substrate, Anisotropic conductive film (acf), And the material to be thermally melted is stacked on the fixture, And it is suitable for accurately projecting the laser beam guided by the laser light transmission device 420 onto the material to be thermally melt-bonded, as well as, Suitable for applying pressure to a Lu material to be hot melt bonded according to a control signal; a control panel 440, Used to manipulate the joint device shown in this creation; And a controller 450, The overall operation of the joint device used to control the creation, Including setting the intensity and launch mode of the laser beam, The pressing pressure of the mechanical jig 430 is set based on the input signal transmitted from the manipulation panel 440. The laser source 410 used in this creation, Use a diode laser or a 鈥 铝 aluminum garnet laser (M: YAG laser), A laser beam having a predetermined intensity of an infrared bandwidth of 800 nm to 110 nm can be emitted according to a control signal of the controller 450 φ. The laser light transmitting device 420 used in the present creation, Including a fiber 422, For guiding the laser beam emitted from the laser source 410 to the mechanical fixture 430; - a fixed station 424, For supporting and fixing the laser light transmission device 420; - a laser beam expander 426, For expanding the laser beam conducted through the optical fiber 422 into a beam size and shape suitable for projection; And a scan driver (Scan Driver) 428, Carrying the laser light beam expander 426 to the predetermined position according to the control signal of the controller 450, In order to project the laser beam on the 16 M322062 • connection part of the material to be hot-fused. _ However, The optical fiber 422 used by the above-described laser light transmitting device 420, The optical fiber 422 can also be replaced with other optical components that also have a laser beam conducting function. The laser beam shape 'the portion of the laser light transmitting device 420 of the present invention projected onto the material includes a spot-shaped laser beam having a predetermined diameter, a line-shaped laser beam having a predetermined length, Or a rectangular point laser beam (rectangUlar φ spot-shaped laser beam) that is focused on a predetermined projection area. and, The laser light transmission device 420 of the present invention, Based on the control signal of the controller 450, Ability to repeatedly project a laser beam, And each time the projected laser beam is accurately projected onto a predetermined area of the anisotropic conductive film (ACF). Simultaneously, In order to impart a suitable predetermined joint strength to the joint portion of the material to be thermally fused, During the projection of the laser beam by the laser light transmitting device 420, The mechanical jig 430 simultaneously applies pressure to the joint portion of the material for hot melt bonding. ·; The mechanical fixture 430 used in this creation, Including a base 432, a pressurizing device 434 • And a pressurizing drive unit 436. among them, The base 432 is provided to a panel including a liquid crystal display (LCD). glass substrate, FR4 substrate, FR5 substrate, Or a variety of substrates 404 such as a flexible circuit board (frpc), And the material 408 supplied to the anisotropic conductive film 4〇6 and to be thermally melt-bonded is stacked on top of the placed substrate 4〇4. The pressing device 434 has an optical window 434a, Provided to the laser beam 402 projected by the laser light transmitting device 420, When the laser beam 4〇2 is projected onto the uppermost material 408 to be thermally fused and thermally bonded to the substrate 404, The pressurization 17 M322062 device 434 applies pressure to the substrate 404 and the material 408 that is thermally fusion bonded. The pressurizing drive unit 436 drives the pressurizing device 434 to generate an appropriate predetermined pressurizing pressure in accordance with the control signal of the controller 450. As shown in Figure 4, The material 408 and the substrate 404 to be thermally fusion bonded, Each has its own bumps 4a and 8a and 404a which are opposite to each other and which are used to form an electrical connection. When the anisotropic conductive film 406 is placed between the bump 404a of the substrate 404 and the bump 408a of the material 408 to be thermally bonded, The material 408 is pressurized by projecting the laser beam 402 and by the pressurizing device 434. At this time, Between the bump 404a of the substrate 404 and the bump 408a of the material 408, The conductive particles of the anisotropic conductive film 406 are destroyed by pressurization, That is, an electrical connection that constitutes a single direction current conduction; The adhesive of the anisotropic conductive film 4〇6 fills and levels the gap between the bump 404a of the substrate 404 and the bump 408a of the material 408. The bond between the substrate 404 and the material 408 is made stronger. The control panel of the present creation 440 ·, Including a button area and a liquid crystal display (lcd), It is possible to display the current operation of the engaging device shown in this creation under the control of the controller 45A, And after outputting the control signal via the button area, The control signal is immediately transmitted and input to the controller 450 and then manipulated by the controller 450 to engage the engagement means for engaging the anisotropic conductive film with the laser beam as shown in the present writing. & this creation Controller 450, Having a numerical control for receiving a key zone input from the manipulation panel 440, And set the various variables of the workflow needle Wei, E.g, You can set the wavelength of the laser beam, strength, Wei Fang Nina _, The disintegration of the mechanical fixture 430, etc. It also has the function of controlling each component of the joint device according to the control panel input on the button area of the control panel shed. 18 M322062 ; And the information such as the control result and the operation status is immediately transmitted to the control surface. And the function displayed on the liquid crystal display of the manipulation panel 440. the following, The joint method of the Leixian beam-bonded anisotropic conductive film (10) shown in the present invention is described in detail. And the bonding method by the excavation method is that the material to be thermally coupled can be connected to the substrate (10) by using an anisotropic conductive film (ACF). As shown in Figure 4, First of all, Glass substrate or flexible circuit board (Ff> c) the substrate 404 to be thermally bonded is placed on the base 432 of the mechanical fixture 430, The anisotropic conductive film 406 is placed on top of the substrate 404. The material 408 to be thermally bonded is then placed on top of the anisotropic conductive film 406. At this time, a placement position between the substrate 4〇4 and the material 408 to be thermally bonded, The bumps 4〇4a of the substrate 4〇4 and the bumps 408a of the material 408 must be aligned with each other and can be electrically connected to each other. The present invention implements a placement position between the alignment substrate 404 and the material 408 to be thermally fusion bonded, It is achieved by an automatic device such as a robot (not shown). then, The laser light source 410 emits a predetermined wavelength and a predetermined intensity according to the control signal of the controller 450, and may be a base film of the anisotropic conductive film (ACF) or a laser beam absorbed by the indium tin oxide film (IT0) of the glass substrate. . among them, The laser source 41 emits a laser beam having a wavelength of 800 nm to 11 nm. and, The laser beam 'ejected by the laser light source 41' may be a continuously emitted laser beam or an intermittently emitted laser beam. The laser beam emitted by the laser source 410 is conducted to a laser light transmitting device 420 provided with an optical fiber 422 and a mirror. Before projecting onto the uppermost layer of material 408 to be hot melt bonded, The transmitted laser 19 M322062 ~ beam is first expanded via a laser beam expander 426 coupled to fiber 422 to a predetermined beam size and shape suitable for projection. • A laser beam that is expanded into a predetermined beam size and shape by a laser beam expander 426, After passing through the optical window 434a having a high transmittance for the laser beam (typically having a transmittance of more than 9%), Projected to the uppermost layer of material 4〇8 for hot-melt bonding, And the continuous injection time is about 5 to 10 seconds. The optical window 434a is fixed to the pressing device 434. and so , The pressurizing device 434 has the function of providing a laser beam 4〇2 that has been expanded, And the substrate 404 and the material 408 subjected to hot-melt bonding are subjected to a function of a predetermined pressure of about 250 to 600 kg/cm2. The best embodiment of the present creation, Based on the material 408 of the uppermost layer to be subjected to hot melt bonding, And implementing the bonding method shown in this creation, This base film can be attached to the glass substrate 404 having the coated indium tin oxide film (IT0) by using an anisotropic conductive film (ACF). but, According to the source of the absorbed laser beam, There are two different joining methods for this creation. The first method of joining, Based on the material 4〇8 of the material to be thermally melt-bonded, #And the base film is used as the source of the absorption laser beam. This bonding method is when the laser light beam 402 is projected onto the top surface of the base film. The energy source of the laser beam 402 is similar to that of a hot bar. A heat source can be provided to the base film, and so, The energy of the laser beam 402 is immediately absorbed and converted into heat by the base film. And the heat converted into it is immediately transmitted through the base film itself. Then through the forged copper or gold bumps 4〇8a (thickness of a few micrometers) under the base film, The conduction reaches the anisotropic conductivity 406. In the implementation of this bonding method, Control the time required to raise the temperature to a predetermined temperature of ~ ° Celsius, Controlling the time required for the thermosetting resin that heats the anisotropic conductive film 406 to be in a molten state of 20 M322062 ♦ as well as, Controlling the time required for the heat hardening to complete the heat-sealed dissimilar conductive film 406, Both are achieved by the controller 450 accurately manipulating the output of the laser beam. Simultaneously, In order to improve the quality of the hot-melt joint between the bump 408a of the base film and the indium tin oxide film (ITO) 404a of the glass substrate 404, During the projection of the laser beam, The pressurizing device 434 of the mechanical jig 430 applies a predetermined pressing pressure to the glass substrate 404 and the base film subjected to the heat fusion bonding. The first method of joining, The indium tin oxide film (UT 〇) coated on the glass substrate 4〇4 is used as the source of the absorption laser beam. When the laser beam 402 is projected onto the lowermost glass substrate 404, The laser beam 4〇2 is immediately absorbed by the indium tin oxide film (ITO) coated on the glass substrate 4〇4. At this time, The glass substrate 4〇4 conducts most of the laser beams belonging to the red-outer line bandwidth wavelength. The indium tin oxide thin film (ITO) coated on the glass substrate 404 absorbs the energy of the local laser beam 402. Because the output per unit area of the laser beam is much larger than the output of the general beam, and so, Even though the indium tin oxide film (ιτο) is only an energy source that is absorbed into the local laser beam 402, But the laser it absorbs, the beam energy, Still enough to convert to the required heat, The converted heat is immediately conducted by the indium tin oxide film (ITO) to the anisotropic conductive film 406. In the same situation, In the implementation of this bonding method, The controller of this creation can accurately manipulate the output of the detail laser. and so, Raise the temperature to a predetermined Celsius temperature, The hot hard record of heating the rotating dough shed is required for the molten state. Or heat-hardening the time required to complete the anisotropic conductive film of the ship joint, Effective adjustment and control are available. Similarly, In order to increase the bonding quality between the bump 408a of the base thin film and the indium tin oxide film (iT〇) 4〇4a of the glass substrate 404, during the projection laser beam, The pressurizing device 434 of the mechanical jig 430 applies a predetermined pressing pressure to the glass substrate 404 and the base film subjected to the heat fusion bonding. In summary, The bonding method shown in this creation uses a laser diode (di〇de laser) as a heat source. It is indeed possible to use a laser beam to join an anisotropic conductive film (ACF), It is also possible to replace this conventional hot melt bonding method in which an anisotropic conductive film (ACF) is bonded by using a high temperature bar (h〇t bar). especially, When the aforesaid bonding method is used to bond the anisotropic conductive film (ACF) with a laser beam, Because the output of the laser beam can be automatically controlled accurately, and so, The construction time required for the hot melt connection can be significantly shortened. In addition to improving productivity in fully automated operations, The connection reliability of the bonding anisotropic conductive film and the reusability of the bonding method can be sufficiently achieved. In addition, The joining method shown in this creation, Can be applied to the electronics field, Semiconductor field, Small precision packaging in the field of biotechnology and environmental technology. especially, When using the money shown in this creation, Secretly outputting the output of the laser beam, It is possible to achieve hot-melt bonding only for the connected portion. and, In a short time, the temperature can be raised to the hot-melt connection. Construction time can be shortened. and so, The joining method and device shown in the present creation, It is possible to improve the connection between the laser beam and the anisotropic conductive film. and also, The joint device of the creation, Various materials of Xiang have different phenomena of laser beam absorption characteristics for different laser light wavelengths. It is also possible to achieve the purpose of thermally fusing a variety of different materials with a laser beam. The scope of application of this creation, It is not limited to the preferred embodiments described above, and the effects that can be achieved with the purpose of the present invention are equivalent to 22 M322062 or equal. Or not without the spirit of this creation, and it is an equivalent addition that can be easily accomplished by those skilled in the art using the content of this creation. Alternative, White & 曰1~ and improver, All should be within the scope of this creation. And the scope of the patent application for this creation is claimed. The scope of the rights & [Simple description of the schema] The creative purpose that this creation can achieve, And the characteristics and other features, Effectiveness, According to the detailed description and at the same time with the contents shown in the figure, Will be more, , 青楚和明白0 Fig. 1 is a schematic view showing a conventional bonding apparatus for carrying out a thermally hybrid anisotropic conductive film. Figure lb is a flow chart showing a conventional joining method for performing a hot melt bonding anisotropic conductive film. Fig. 2 is a conceptual diagram showing the principle of bonding an anisotropic conductive film with a laser beam in the present invention. Fig. 3 is an energy absorption rate analysis diagram of the energy of the laser beam absorbed in the process of performing the bonding of the anisotropic conductive film with the f-beam. mouth /, Fig. 4 is an explanatory view showing one of the most preferred embodiments in a block diagram in accordance with the joining apparatus shown in the present writing. [Description of main component symbols] 102 ...················································································· 112a ····Bump 23
M322062 114.........異方性導電膜 114a……保護膜 116.........積體電路 116a……凸塊 118.........高溫棒118 202.........物件 204.........物件 206.........雷射光束 410........•雷射光源 402………雷射光束 404.........基板 404a ......凸塊 406.........異方性導電膜 408·…··…材料 408a ......凸塊 420.........雷射光傳輸裝置 422.........光纖 424.........固定台 426.........雷射光擴束器 428.........掃描驅動部 430.........機械夾具 432.........底座 434.........加壓裝置 434a……光學窗440 436.........加壓驅動部 440.........操控面板 450.........控制器 24M322062 114......... anisotropic conductive film 114a...protective film 116...integrated circuit 116a...bump 118......high temperature Rod 118 202.........object 204...object 122... laser beam 410........•laser source 402.........laser beam 404.........substrate 404a...bump 406...is anisotropic conductive film 408·...·... material 408a ...bump 420.........laser light transmission device 422.........fiber 424.........fixed table 426.... ..... laser beam expander 428.........scanning drive unit 430.........mechanical clamp 432.........base 434... ...pressurizing device 434a...optical window 440 436.........pressurizing drive unit 440.........manipulation panel 450........ Controller 24