TWM310195U - Multi-layere partition - Google Patents

Multi-layere partition Download PDF

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Publication number
TWM310195U
TWM310195U TW95217864U TW95217864U TWM310195U TW M310195 U TWM310195 U TW M310195U TW 95217864 U TW95217864 U TW 95217864U TW 95217864 U TW95217864 U TW 95217864U TW M310195 U TWM310195 U TW M310195U
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TW
Taiwan
Prior art keywords
spacer
buffer layers
base layer
multilayer spacer
layer
Prior art date
Application number
TW95217864U
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Chinese (zh)
Inventor
Sheng-Jr Wang
Original Assignee
Sun Toward Tech Entpr Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sun Toward Tech Entpr Co Ltd filed Critical Sun Toward Tech Entpr Co Ltd
Priority to TW95217864U priority Critical patent/TWM310195U/en
Publication of TWM310195U publication Critical patent/TWM310195U/en

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  • Packaging Frangible Articles (AREA)

Description

M310195 八、新型說明: 【新型所屬之技術領域】 本創作係與包裝材有關,特別是指一種多層間隔物。 【先前技術】 5 按,間隔物(spacer)的使用範圍極廣,例如:複數個玻 璃基板封裝於一包裝體時的使用場合,其原理主要是將複 數個間隔物分別置於各玻璃基板之間,經由各該間隔物區 隔各該玻璃基板,並達到保護玻璃基板的目的。 一般的間隔物是以塑膠發泡材料所製成,如要得到較 10佳的緩衝能力’則發泡材料的發泡倍率須提高。但是高發 泡倍率的間隔物較軟,如果應用在直立式儲“狀 軟的間隔物較難呈站立狀態,在使用上會發生滑落的情 形。相反的,如果間隔物的硬度較高,其應用在直立式儲 存是比較沒有問題的’但是較硬的間隔物是以發泡倍 15低的發泡材料製成,因此所提供的緩衝能力較弱 個兩難的問題。 【新型内容】 士本創作之主要目的在於提供一種多層間隔物’其 日守具有較佳的緩衝能力以及較高的剛性。 勺4達創作目的’本創作所提供之多層間隔物 土&㈢以及二緩衝層位於該基體層之二側,其 中该基底層之剛性較該二緩衝層高。 /、 20 M310195 【實施方式】 為了詳細說明本創作之構造及特點所在,兹舉以下之 較佳實施例並配合圖式說明如后: 請參閱第一圖所示,本創作所提供之多層間隔物1〇是 5由一基底層12以及二緩衝層14所組成。請參閱第二圖所 示,該間隔物10上具有若干穿孔16,邊緣具有若干凹缺 18,其是對應於所欲間隔的物件之特性的。在本實施例中: 该間隔物疋用以間隔液晶基板(未顯示)之用,而該等穿孔 16與凹缺18疋對應於液晶基板上的積體電路 ⑴變壓H等電子元件,使以上的好元件不會受1 =線對 應於不同規格的液晶基板,一間隔物20的外形可製作為如 第三圖所示。 *… 該基底層I2為-塑膠薄板,其厚度可在〇·8丽〜3職。 該基底層12可以PET (p〇lyethylene如叩她也⑹、M310195 VIII. New description: [New technical field] This creation is related to packaging materials, especially a multi-layer spacer. [Prior Art] 5 According to the wide range of use of spacers, for example, when a plurality of glass substrates are packaged in a package, the principle is mainly to place a plurality of spacers on each of the glass substrates. Each of the glass substrates is partitioned by each of the spacers to achieve the purpose of protecting the glass substrate. The general spacer is made of a plastic foamed material, and the foaming ratio of the foamed material must be increased if a better buffering capacity is required. However, the spacer with high expansion ratio is soft. If it is applied in an upright storage, the soft spacer is difficult to stand, and it may fall off during use. On the contrary, if the hardness of the spacer is high, its application In the vertical storage is relatively no problem, but the harder spacer is made of a foaming material with a low foaming ratio of 15, so the buffering capacity provided is a weaker problem. [New content] Shiben creation The main purpose of the invention is to provide a multi-layer spacer which has better buffering capacity and higher rigidity. The scoop 4 is for the purpose of creation. The multi-layer spacer soil & (three) and the two buffer layer provided by the present invention are located on the substrate. The two sides of the layer, wherein the base layer is higher in rigidity than the two buffer layers. /, 20 M310195 [Embodiment] In order to explain in detail the structure and features of the present invention, the following preferred embodiments are described with reference to the drawings. As shown in the first figure, the multilayer spacer 1 provided by the present invention is composed of a base layer 12 and two buffer layers 14. As shown in the second figure, The spacer 10 has a plurality of perforations 16 and the edges have a plurality of recesses 18 which are characteristic of the object corresponding to the desired spacing. In this embodiment: the spacers are used for spacing the liquid crystal substrate (not shown). The perforations 16 and the recesses 18 疋 correspond to the integrated circuit on the liquid crystal substrate (1), and the electronic components such as the H-transformed H, so that the above good components are not subject to the 1 = line corresponding to the liquid crystal substrate of different specifications, a spacer The shape of 20 can be made as shown in the third figure. *... The base layer I2 is a plastic sheet with a thickness of 〇·8 丽~3. The base layer 12 can be PET (p〇lyethylene such as 叩 she also (6),

15 ABS(acrylomtrile-butadiene styrene terpolymer)、PS (polystyrene)、PP( polypr〇pylene)、pE 咖駟邮⑽)等塑膠 材料所製成。該基底層12主要是提供該間隔物1() 一定的 剛性,並具有分散壓力之作用。 清參閱第四圖所示,該二緩衝層14是貼附於該基底層 2〇 12 之一侧。该二緩衝層是以 ρρ、ρΕ、ρ§ ρυ、ρν(^(ρ〇ΐρ^β chlonde)等材料進行發泡後所得到之多孔隙結構。前述之發 泡材料之發泡倍率可在2倍〜5()倍,較佳的發泡倍率可在5 L 30乜更佳的發泡倍率可在1〇倍〜μ倍。該二緩衝層 14主要是提供彈性緩衝的能力。在某些特定場合下,該二 M310195 緩衝層14可以不同發泡倍率之發泡材料或是不同的材料所 製成,藉以提供不同的緩衝能力。 第四圖顯示另一種型態之間隔物30,其主要構成與前 述相同,不同者在於在緩衝層32的表面具有預定的紋路 5 34,藉以降低靜電吸附的作用。 藉此,本創作所提供之間隔物不但具有一定的剛性, 以使其可應用於直立式的儲存狀況,他也具有相當的缓衝 能力,以保護儲存的物品。 M310195 【圖式簡單說明】 第一圖為本創作一較佳實施例之分解圖; 第二圖為本創作一較佳實施例之頂視圖; 第三圖為本創作另一外形之間隔物之頂視圖; 5 第四圖為本創作一較佳實施例之剖視圖;以及 第五圖為本創作另一較佳實施例之剖視圖。 【主要元件符號說明】 10間隔物 12基底層 14緩衝層 ίο 16穿孔 18凹缺 32緩衝層 34紋路 20間隔物 30間隔物15 ABS (acrylomtrile-butadiene styrene terpolymer), PS (polystyrene), PP (polypr〇pylene), pE curry (10) and other plastic materials. The base layer 12 mainly provides the spacer 1 () with a certain rigidity and has a function of dispersing pressure. As shown in the fourth figure, the two buffer layers 14 are attached to one side of the base layer 2〇12. The two buffer layers are multi-porous structures obtained by foaming materials such as ρρ, ρΕ, ρ§ ρυ, ρν(^(ρ〇ΐρ^β chlonde), etc. The foaming ratio of the aforementioned foaming material can be 2倍〜5 () times, the preferred expansion ratio can be 5 l 30 乜 better expansion ratio can be 1 〜 ~ μ times. The two buffer layer 14 is mainly to provide elastic buffering ability. In some In a specific case, the two M310195 buffer layers 14 can be made of foaming materials of different expansion ratios or different materials to provide different buffering capacities. The fourth figure shows another type of spacer 30, which is mainly The configuration is the same as described above, except that a predetermined texture 534 is provided on the surface of the buffer layer 32, thereby reducing the effect of electrostatic adsorption. Thereby, the spacer provided by the present invention not only has a certain rigidity, so that it can be applied to it. In the upright storage condition, he also has considerable buffering capacity to protect stored items. M310195 [Simplified illustration] The first picture is an exploded view of a preferred embodiment of the creation; a top view of the preferred embodiment; The third figure is a top view of a spacer of another shape of the creation; 5 is a cross-sectional view of a preferred embodiment of the creation; and a fifth section is a cross-sectional view of another preferred embodiment of the creation. DESCRIPTION OF SYMBOLS 10 spacer 12 base layer 14 buffer layer ίο 16 perforation 18 recess 32 buffer layer 34 grain 20 spacer 30 spacer

Claims (1)

M310195 九、申請專利範圍: 1. 一種多層間隔物,包含有:一基底層以及二緩衝層位 . 於該基體層之二側,其中該基底層之剛性較該二緩衝層高。 < 2.依據申請專利範圍第1項所述之多層間隔物,其中該 二緩衝層為多孔隙結構。 5 3.依據申請專利範圍第1項所述之多層間隔物,其中該 二緩衝層為發泡材料所製成,發泡倍率為2倍〜50倍。 ^ 4.依據申請專利範圍第1項所述之多層間隔物,其中該 二緩衝層為發泡材料所製成,發泡倍率為10倍〜18倍。 5. 依據申請專利範圍第1項所述之多層間隔物,其中該 ίο 二緩衝層之表面具有紋路。 6. 依據申請專利範圍第1項所述之多層間隔物,其中該 二緩衝層為不同發泡倍率之發泡材料所製成。 7. 依據申請專利範圍第1項所述之多層間隔物,其中該 二緩衝層是以不同之發泡材料所製成。M310195 IX. Patent Application Range: 1. A multilayer spacer comprising: a base layer and two buffer layers. On both sides of the base layer, wherein the base layer is higher in rigidity than the two buffer layers. < 2. The multilayer spacer of claim 1, wherein the two buffer layers are of a porous structure. 5. The multilayer spacer according to claim 1, wherein the two buffer layers are made of a foamed material, and the expansion ratio is 2 to 50 times. 4. The multilayer spacer according to claim 1, wherein the two buffer layers are made of a foamed material, and the expansion ratio is 10 times to 18 times. 5. The multilayer spacer of claim 1, wherein the surface of the λ2 buffer layer has a grain. 6. The multilayer spacer of claim 1, wherein the two buffer layers are made of foamed materials having different expansion ratios. 7. The multilayer spacer of claim 1, wherein the two buffer layers are made of different foamed materials.
TW95217864U 2006-10-05 2006-10-05 Multi-layere partition TWM310195U (en)

Priority Applications (1)

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TW95217864U TWM310195U (en) 2006-10-05 2006-10-05 Multi-layere partition

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Application Number Priority Date Filing Date Title
TW95217864U TWM310195U (en) 2006-10-05 2006-10-05 Multi-layere partition

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TWM310195U true TWM310195U (en) 2007-04-21

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