M286525 創作說明α) 【新型所屬之技術領域】 • 本創作係有關一種影像擷取結構，特別是有關一種扁 平化且製程簡便之接觸式影像擷取結構改良。 【先前技術】 按，現今指紋辨識器種類包括有光學掃描器及電容式 掃描器，其中光學掃描器係利用數千個電荷輕合器件組成 的t列，取得手指上脊紋與溝紋的數位灰階影像。而電容 ^掃瞄器係將陣列上的數千個電容器充電到一個已知的 •:手指的脊紋與溝紋會吸掉微量的電荷，這個量的大小 f決於各個特徵和某個特定電容器距離多遠。電路系統會 ^測被吸掉的電荷，並由各個值計算出距離。軟體會將距 離的陣列轉換成指紋圖。 而現今光學式掃瞄器之 航頸，原因在於感測晶片係 使影像成像，並且成像尺寸 得影像無法1 : 1呈現，而且 造成影像會衰減及失真等缺 提南。 有鑑於此，本創作係針 式影像擷取結構改良，以有 體積大小己發展無法再縮小之 利用一鏡座將光線折射或繞射 必需配合影像成像之距離，使 此影像經由折射或繞射過程會 陷，進而使此影像之解析度無 對上述之問題，提出一種接觸 效解決上述技術之困擾。 【新型内容】M286525 Creation Description α) [New Technology Area] • This creation is about an image capture structure, especially for a flattened and easy-to-process contact image capture structure. [Prior Art] According to the present invention, the type of fingerprint reader includes an optical scanner and a capacitive scanner, wherein the optical scanner uses a t-column composed of thousands of charge-and-light-coupled devices to obtain the digits of the ridges and grooves on the finger. Grayscale image. The Capacitor Scanner charges thousands of capacitors on the array to a known • The ridges and grooves of the finger absorb a small amount of charge, the magnitude of which depends on the characteristics and a particular How far is the capacitor? The circuit system measures the charge that is absorbed and calculates the distance from each value. The software converts the distanced array into a fingerprint. The neck of today's optical scanners is because the sensing chip is used to image the image, and the image size is not 1:1, and the image is attenuated and distorted. In view of this, the creation of the needle-type image capturing structure of the present invention is such that the size of the lens can be reduced and the size of the lens can be reduced. The distance between the lens and the image must be refracted or diffracted, so that the image is refracted or diffracted. The process will be trapped, so that the resolution of the image has no problem with the above, and a contact effect is solved to solve the above problem. [New content]
第5頁 M286525 四、創作說明（2) 構改良’可使封裝結構之體積可大幅的縮小。 ^ 本創1之另一目的，係在提供一種接觸式影像擷取結 構改良，藉由接觸式感測方式，使光學式掃瞄器不需要透 遍鏡座而達成顯像，進而使感測影像可直接呈現。 根據本創作，一種接觸式影像擷取結構改良，其係包 括一基板’在基板上設有電性連接之電路層及感測晶片， 並在此感測晶片周圍環設一框座，而框座與感測晶片之間 形成一容置空間，在容置空間内設置一斜面透明層，其中 在感測晶片表面上係以鍍膜方式設置至少一保護廣，使此 測晶片不易損傷。 底下藉由具體實施例配合所附的圖式詳加說明，當更 容易瞭解本創作之目的、技術内容、特點及其所達成之功 效。 【實施方式】 本創作係為一種接觸式影像擷取結構改良，請參閱第 一圖所示，此影像擷取結構包括一基板10，在基板10上設 有一電路層1 2及一感測晶片1 4，此感測晶片1 4係用打線方 _式或覆晶方式與電路層1 2電性連接，其中感測晶片1 4係為 電荷輕合元件（Charge-Coupled Device，CCD)及互補式 金屬氧化半導體（CMOS )其中之一者，而在感測晶片1 4周 圍環設一框座16，此框座16具透光性且其透光率係為10% 至30%之間，且此框座1 6與感測晶片1 4之間形成一容置空 間’在此容置空間内利用壓模方式設置一斜面透明層1 8，Page 5 M286525 IV. Creation Instructions (2) Structural Improvements The size of the package structure can be greatly reduced. ^ Another purpose of the present invention is to provide a contact image sensing structure improvement. By means of contact sensing, the optical scanner does not need to pass through the lens holder to achieve imaging, thereby enabling sensing. The image can be rendered directly. According to the present invention, a contact image capturing structure is improved, which comprises a substrate having a circuit layer and a sensing chip electrically connected on the substrate, and a frame is arranged around the sensing wafer, and the frame is An accommodating space is formed between the socket and the sensing wafer, and a bevel transparent layer is disposed in the accommodating space, wherein at least one protection is disposed on the surface of the sensing wafer by a coating method, so that the wafer is not easily damaged. The purpose of the present invention, the technical content, the features, and the effects achieved by the present invention will be more readily understood by the specific embodiments and the accompanying drawings. [Embodiment] The present invention is a contact image capturing structure improvement. Please refer to the first figure. The image capturing structure includes a substrate 10 on which a circuit layer 12 and a sensing chip are disposed. 1 4, the sensing wafer 14 is electrically connected to the circuit layer 12 by wire bonding or flip chip, wherein the sensing wafer 14 is a Charge-Coupled Device (CCD) and complementary. One of the metal oxide semiconductors (CMOS), and a frame 16 is disposed around the sensing wafer 14 . The frame 16 is translucent and has a light transmittance of between 10% and 30%. An accommodating space is formed between the frame 16 and the sensing wafer 14 . A bevel transparent layer is disposed in the accommodating space by using a stamper.
第6頁 M286525 四、創作說明（3) ΐ = 之材質係為非導電材質之光學膠體，較佳 者為環氧樹脂類之高分子化合物。 Τ 1 匕方ΐίΐ第f圖所示’接著在感測晶片14表面上利用鑛 = 護層2° ’此保護層20的材質係為非導電材 用以過濾紅光線或紫外光線，如此即完 =景:像擷取封裝結構。此外也可在框，周圍外且位; ίϊ- ΐίϊΐ:輔助光源24，此辅助光源16為冷陰極螢 丨‘燈管或燈泡其中之-者，用以防止光線不足之情況發 另外此影像擷取結構在製作時也可採用二種製作方 ^，请參閱第三圖所示，其包括有步驟31〇，將一具 測晶片“之晶圓鍍上一保護層20，再將此晶圓切割 =複數皁-感測晶片14，即步驟S12，接著下一步驟814， =每-感測晶片14依上述封裝方式完成影像擷取結構之 留此外，第二種製程步驟首先為S16，將晶圓切割為 複數单-感測晶片14 ,接著步驟S18將每一感測晶片2〇分 別封裝在具有複數框座16之模組内並進行鍍膜，封裝及鍍 _膜完成後，將具有複數框座丨6之模組切割，即步驟§2〇。又 本創作使用時，操作者可直接將手指放置在保護層2〇 表面上，使此種影像擷取結構不需要透過鏡座而達成擷 像，進而使感測影像可直接呈現，而且在封裝結構體上 可大幅的縮小及扁平化。 惟以上所述之實施例僅為本創作之較佳實施例，藉由 第7頁 M286525 四、創作說明（4) 實施例說明本創作之特點，其目的在使熟習該技術者能暸 解本創作之内容並據以實施，並非用以局限本創作實施之 範圍。舉凡運用本創作申請專利範圍所述之構造、形狀、 >寺徵及精神所為之均等變化及修飾，皆應包括於本創作申 請專利之範圍内。Page 6 M286525 IV. Creation Instructions (3) ΐ = The material is a non-conductive optical colloid, preferably a polymer compound of epoxy resin. Τ 1 匕 ΐ ΐ ΐ ΐ ΐ ΐ ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' = Scene: Like drawing a package structure. In addition, it can also be in the frame, around the outside; ίϊ- ΐίϊΐ: auxiliary light source 24, this auxiliary light source 16 is a cold cathode firefly 'lamp or bulb, to prevent the lack of light to send another image撷The fabrication structure can also be made in two ways, as shown in the third figure, which includes the step 31, plating a wafer of a test wafer with a protective layer 20, and then applying the wafer. Cutting = complex soap-sensing wafer 14, step S12, then next step 814, = per-sensing wafer 14 completes the image capturing structure in the above-described packaging manner, the second processing step is first S16, The wafer is diced into a plurality of single-sensing wafers 14, and then each of the sensing wafers 2 封装 is packaged in a module having a plurality of slabs 16 and coated, and after encapsulation and plating are completed, the wafers are diced. The module of the frame 丨6 is cut, that is, the step §2〇. When the creation is used, the operator can directly place the finger on the surface of the protective layer 2, so that the image capturing structure does not need to be achieved through the lens holder. The image, so that the sensing image can be directly presented, and The package structure can be greatly reduced and flattened. However, the above embodiments are only preferred embodiments of the present invention, and the features of the present description are illustrated by the M286525 page 7 (4). The purpose is to enable those skilled in the art to understand the content of this creation and implement it according to it, and is not intended to limit the scope of the creation of this creation. The structure, shape, > temple levy and spirit described in the scope of application for the creation of this creation patent All changes and modifications should be included in the scope of this patent application.
第8頁 M286525 圖式簡單說明 【圖式簡單說明】 弟一圖為本創作之設置斜面透明層之剖面示意圖。 第二圖為本創作之設置保護層之剖面示意圖。 第三圖為本創作結構製作流程圖。 【主要元件符號說明】Page 8 M286525 Simple description of the drawing [Simple description of the drawing] The picture of the younger brother is a schematic cross-section of the transparent layer of the bevel. The second figure is a schematic cross-sectional view of the protective layer of the creation. The third picture is a flow chart of the creation of the creation structure. [Main component symbol description]
第9頁 10 基板 12 電路層 14 感測晶片 16 框座 18 斜面透明層 20 保護層 22 濾光層 24 輔助光源Page 9 10 Substrate 12 Circuit layer 14 Sensing wafer 16 Frame 18 Bevel transparent layer 20 Protective layer 22 Filter layer 24 Auxiliary light source