M285054 八、新型說明： 【新型所屬之技術領域】 ，尤指一種藉由半 疊且稍具黏性之薄 本創作係有關於一種薄膜折疊式天線 導體製程技術將天線電路形成在柔軟可折 膜上的天線及其製造方法者。 【先前技冬奸】M285054 VIII. New description: [New technical field], especially a semi-stacked and slightly viscous thin book. The system is based on a film folding antenna conductor process technology to form the antenna circuit in a soft and foldable film. The antenna above and its manufacturing method. [Previous technical winter rape]
近年來，絲通訊技術無論是在軍事、關或是個人用 二上’都有絲愈廣泛的朗。未來騎勢，則是傾向在所 有的電子裝置上均附加無線通訊的功能。例如，無線滑鼠、 無線鍵盤、無線區域網路裝置等電蘭邊裝置，或是手機、 ^手機功能之個人數位助理（PDA)、藍芽耳機、藍芽刪 個人>肖費性資訊產品，或甚至是冰箱、電視等家電用品等 另外’在-些無線細中，也常有在可攜式商品上設置 電路以接收或發射無線電波訊號的需要。例如無線電子 ^籤（RFID)等’其可以被附加在商場的商品上，以作為商 ,,、之產tm種類辨識或是防盜等功能。由於天線電路設計的優 ，夕將直接影響觀些無線裝置的通訊效能。所以，目前有 ^多的研究均是著重在各種印㈣天線f路設計，以符合曰 氧增加的無線通訊應用。 Y現今對於天線的製造方式，大多數都是以印刷電路的技 S將天線電路_在—基板上。該基板可以是硬質的印刷 膜路板或疋塑膠殼，或者，也可能是軟質的塑膠片或聚酯薄 、另有種習知技術則是藉由將一金屬箔貼合在軟質塑膠 M285054 片上，而直接以該金屬箔作為天線電路的結構。然而此種貼 合金屬殆以形成天線電路的技術，顯然會使得天線電路的尺 寸形狀設計受到嚴重限制，且無法小型化與精密化，而印刷 電路之技術也有其瓶頸，故均有待進一步改良者。 【新型内容】 本創作之第一目的，在於提供一種薄膜折疊式天線，其 可藉由半導體製笋技術將天線電路形成在一柔軟可折疊且稍 具黏性之薄膜上。由於半導體製程技術的使用，而可設計出 更精密的天線電路，以提高天線之無線通訊效能。 本創作之第一目的，在於提供一種薄膜折疊式天線，其 係藉由半導體製程技術在一矽基板上依序形成聚對二甲基苯 薄膜以及天線電路，之後可選擇將聚對二甲基苯薄膜連同天 線電路剝離矽基板而成為本創作之薄臈折疊式天線。由於是 在石夕基板上進行半導體製程，所以本創作之薄膜折疊式天線 製造方法將可選擇與其他CMOS等積體電路製程一起整合在 同一石夕基板上。 本創作之第三目的，在於提供一種薄膜折疊式天線，主 要係在一聚對二甲基苯薄膜上形成一天線電路。由於聚對二 甲基苯薄膜具有高可靠性、重量輕、低摩擦係數、透明、低 透氣率、抗菌、高拉伸與降服強度、適用溫度範圍廣、抗輻 抗酸及光照、高介電強度等等之優良材料特性，故可提 咼薄膜折疊式天線之天線效能、使用壽命、及可應用範圍者。 本創作之第四目的，在於提供一種薄膜折疊式天線，其 M285054 係為-雙頻單極天線電路，且藉__天線電路設計，可 達到提高天線效能之目的。 為達上述之目的，本創作薄膜折疊式天線的製造方法， 包括有下列步驟： 在一基板上形成一可剝離介質層； 在該可剝離介質層上形成一聚對二甲基苯薄膜； 在该聚對二甲基笨薄膜上形成-天線電路層；以及， 將具有該天線電路層之聚對二甲基苯薄膜撕離基板。 於-較佳實補巾，該基板係為絲板，可剝離介 質層係為含有微鹼金屬鹽（micro soap)成分之去垢劑 (detergent) 〇 於一較佳實施例中，沈積該聚對二曱基苯薄膜的步驟更 包括有： 將聚對二甲基苯材料氣化； 將氣化後之聚對二甲基苯材料加熱到一預定高溫 ;以及 在一低壓環境中放置基板，並將聚對二曱基苯材料導 入，使聚對二甲基苯材料沈積到基板上。 於一較佳實施例令，該天線電路層更包括有： 一天線線路，其一端係分岔成狹長延伸之一第一線路及 一第二線路，該第一線路與第二線路所延伸之長度不相等； 一接地線路，其一端係連接該天線線路之另一端，而接 地線路之另一端係為接地（GND);以及 一訊號線路，其一端係連接到天線線路之另一端，該訊 號線路之另一端則可供連接到一訊號源以供訊號傳輸。 於一較佳實施例中，該第一線路係呈一「1」形結構，而 M285054 第二線路係王一「7」形結構，該「1」形之第一線路與「7」 形之第二線路係由接地線路大致朝相同一侧方向延伸，而使 得該天線線路實質上呈現一類似有缺口之矩形框結構，且該 第二線路之延伸長度係大於第一線路。 於另一較佳實施例中，該第一線路與第二線路均分別係 呈具複數彎折之類似波形結構，且第一線路與第二線路係由 揍地線路朝相反方向延伸，且該第二線路之延伸長度係大於 第一線路。 【實施方式】 為了能更清楚地描述本創作所提出之薄膜折疊式天線， 以下將配合圖示詳細說明之。 請參閱圖一 A至圖一 E，其係為本創作之薄膜折疊式天 線的製造方法之一較佳實施例的流程圖。本創作主要是在一 矽（Silicon)基板上，藉由半導體製程來進行薄膜折疊式天線 的製造。於圖一A至圖一E所示之本創作的實施例中，係包 括有下列步驟： 首先，如圖一 A所示，在一矽基板1〇上形成附著力相對 較差、且事後可輕易被剝離之可剝離介質層11。於本實施例 中’ 亥可剥離介質層11係為含有微驗金屬鹽（micro soap) 成分的去垢劑（detergent)，且是以旋塗（Spin Coat)方式形 成於基板 10 上。例如，由 Intemati〇nai procjucts corporation 所 販售之型號MICRO-90產品便是可供選擇使用之去垢劑之 一。在基板10上形成該去垢劑所構成之可剝離介質層U後， 8 M285054 係使去垢劑在室溫空氣中自然乾燥。 接著，如圖一 B所示，在該可剝離介質層11上形成一聚 對二曱基苯（Parylene)薄膜12。於本實施例中，該聚對二曱 基苯薄膜12係藉由氣相沈積（Deposition)方式形成於可剝 離介質層11上。本創作之所以選擇聚對二甲基苯（Parylene， 亦即，poly-para-xylylene)薄膜12,主要是因為其具有下列優 良材料特性，故可提高薄膜折疊式天線之天線效能、使用壽 命、及可應用範圍： # 1·高可靠性（High reliability)，可適用於軍事及商業用 途； 2·重量輕（Lightweight)，與其他種類之薄膜比較密度相 對較低； 3·無應力彼覆（Stress-free coating)，不會對精密天線電 路造成影響； 4·低摩擦係數（Low coefficient of friction)，可作為潤滑 乾膜； 籲 5·透明（Transparency)，為可透光薄膜； 6·不含氣泡（Outgassing)，基本上根本不含任何氣體； 7·良好隔絕性（Outstanding barrier)，極低的透水率與透 . 氣率； 8·抗菌（Fungus and bacteria resistance)性極佳； 9·機械（Mechanical)特性良好，具高拉伸強度（Tensile Strength)與高降服強度（YieidStrength); 10·材質一致性（conformation)，在表面上的每一位置均 具有相同且均勻的厚度； 9 M285054 11·適用溫度範圍廣（Wide temperature range)，由攝氏 -200度到攝氏+200度的可使用溫度範圍； 12·抗輻射（Radiation resistance )’可用在外太空領域； 13·生化相容（Bio-compatible)，對於生化與醫藥成分反 應遲鈍較為惰性； 14·粒子保持性（Particle retention)佳，可延長天線之使 用壽命； 15·抗溶解（Solvent resistance)，對於常見之溶劑具抗溶 效果； 16·抗酸及光照（Acid and base resistance ); 17·絕緣（Electricalbreakdown)，具有高介電強度。 再來，如圖一 C所示，在聚對二甲基苯薄膜12上沈積一 可導電種子層13 (Seed layer)，於本實施例中，該種子層13 可以是銅/鈦（Cu/Ti)金屬，或也可以是其他導電材料者。接 者，在種子層13上以半導體微影技術形成預定圖案之一光阻 層14 (I^layer) ’以作為下一步驟「電鑛」之模具（M〇id) 〇 之後，如圖一 D所示，進行金屬電鍍製程，在未被光阻 層14覆蓋之種子層13部分，加以電鍍形成一金屬電路層15 (例如銅、金專荨）。其後去除光阻層14以及裸露於外界之 種子層13。該金屬電路層15即構成所述之天線電路層。 最後，如圖一 E所示，便可將鍍有金屬電路層15 (天線 電路）之聚對二甲基笨薄膜12撕離基板1〇。由於該聚對二曱 基苯薄膜12係稍具有黏性，所以可以輕易地貼覆而結合於各 種表面上，非常方便使用，成本亦相對低廉。 請參閱圖二所示，為本創作之薄麟疊式天線製造方法 M285054 中一進行沈積聚對二甲基苯薄麟製程步驟示意圖。如圖二 所不’進行圖一 B所示之沈積聚對二甲基苯薄膜的步驟係更 包括有： 步驟ill ’將t對二甲基苯材料氣化。於本實施例中，氣 ，聚對二甲基苯材料的步驟可以是在攝氏溫度150度左右及 氣壓1拖耳左右的環境下操作。 攻步驟112,將氣化後之聚對三甲基苯材料加熱到一預定高In recent years, silk communication technology has become more and more extensive in military, customs or personal use. In the future, riding is a tendency to attach wireless communication to all electronic devices. For example, a wireless mouse device such as a wireless mouse, a wireless keyboard, a wireless local area network device, or a mobile phone, a personal digital assistant (PDA) for a mobile phone function, a Bluetooth headset, a Bluetooth personal deletion, and a visual information product. , or even household appliances such as refrigerators, televisions, etc., in addition to some wireless details, there is often a need to set up circuits on portable products to receive or transmit radio wave signals. For example, a wireless electronic sign (RFID) or the like can be attached to a product of a store to serve as a business, a tm-type identification, or an anti-theft function. Due to the superior design of the antenna circuit, the communication performance of the wireless devices will be directly affected. Therefore, there are currently many studies focusing on various printed (four) antenna f-channel designs to meet the increased wireless communication applications of oxygen. Y Today, most of the antenna manufacturing methods are based on the technology of the printed circuit. The substrate may be a rigid printed film or a plastic case, or may be a soft plastic sheet or a polyester film. Another conventional technique is to bond a metal foil to a soft plastic M285054 sheet. The metal foil is directly used as the structure of the antenna circuit. However, such a technique of bonding metal iridium to form an antenna circuit obviously makes the size and shape design of the antenna circuit severely limited, and cannot be miniaturized and refined, and the technology of the printed circuit also has a bottleneck, so that further improvement is required. . [New Content] The first object of the present invention is to provide a film folding antenna which can form an antenna circuit on a soft foldable and slightly viscous film by a semiconductor bamboo shoot technique. Due to the use of semiconductor process technology, more sophisticated antenna circuits can be designed to improve the wireless communication performance of the antenna. The first object of the present invention is to provide a film folding antenna which sequentially forms a parylene film and an antenna circuit on a substrate by a semiconductor process technology, and then selects a poly-p-dimethyl group. The benzene film and the antenna circuit are stripped of the ruthenium substrate to form the thin folded antenna of the present invention. Since the semiconductor process is performed on the Shixi substrate, the manufacturing method of the film folded antenna of the present invention can be selectively integrated on the same substrate with other integrated circuits such as CMOS. The third object of the present invention is to provide a film folding antenna, which mainly forms an antenna circuit on a polyparaxylylene film. Poly(p-dimethylbenzene) film has high reliability, light weight, low friction coefficient, transparency, low air permeability, antibacterial, high tensile and retractive strength, wide temperature range, anti-radiation and acid resistance, high dielectric The excellent material properties such as strength, etc., can improve the antenna performance, service life, and applicable range of the film folding antenna. The fourth object of the present invention is to provide a film folding antenna, the M285054 is a dual-frequency monopole antenna circuit, and the antenna circuit design can achieve the purpose of improving the antenna performance. For the above purposes, the method for fabricating a film folded antenna includes the steps of: forming a strippable dielectric layer on a substrate; forming a parylene film on the strippable dielectric layer; An antenna circuit layer is formed on the poly-p-phenylene film; and the poly-p-dimethylbenzene film having the antenna circuit layer is peeled off the substrate. Preferably, the substrate is a silk plate, and the strippable dielectric layer is a detergent containing a micro-alkali component. In a preferred embodiment, the poly-deposit is deposited. The step of the p-diphenylbenzene film further includes: gasifying the polyparaxyl benzene material; heating the vaporized polyparaxyl benzene material to a predetermined high temperature; and placing the substrate in a low pressure environment, The polyparaxyl benzene material is introduced to deposit a polyparaxyl benzene material onto the substrate. In a preferred embodiment, the antenna circuit layer further includes: an antenna line, one end of which is divided into a first line and a second line extending in a narrow length, and the first line and the second line are extended The length is not equal; a grounding line has one end connected to the other end of the antenna line, and the other end of the grounding line is grounded (GND); and a signal line, one end of which is connected to the other end of the antenna line, the signal The other end of the line can be connected to a signal source for signal transmission. In a preferred embodiment, the first line has a "1" shape, and the M285054 second line is a "7" structure. The first line of the "1" shape and the "7" shape The second line extends from the ground line substantially toward the same side, such that the antenna line substantially presents a rectangular frame structure similar to the notch, and the second line has an extended length greater than the first line. In another preferred embodiment, the first line and the second line are respectively in a similar waveform structure with a plurality of bends, and the first line and the second line are extended in opposite directions by the ground line, and the The extension length of the second line is greater than the first line. [Embodiment] In order to more clearly describe the film folding antenna proposed by the present invention, the following will be described in detail with reference to the drawings. Please refer to FIG. 1A to FIG. 1E, which are flowcharts of a preferred embodiment of a method for manufacturing a film folding antenna of the present invention. This creation is mainly based on a semiconductor substrate to fabricate a film folded antenna by a semiconductor process. In the embodiment of the present invention shown in FIG. 1A to FIG. 1E, the following steps are included: First, as shown in FIG. 1A, adhesion on a substrate 1 is relatively poor, and can be easily performed afterwards. The peelable dielectric layer 11 is peeled off. In the present embodiment, the detachable dielectric layer 11 is a detergent containing a micro soap component and is formed on the substrate 10 by spin coating. For example, the model MICRO-90, sold by Intemati〇nai procjucts corporation, is one of the detergents available for use. After the strippable dielectric layer U composed of the detergent is formed on the substrate 10, 8 M285054 is used to naturally dry the detergent in air at room temperature. Next, as shown in Fig. 1B, a parylene film 12 is formed on the strippable dielectric layer 11. In the present embodiment, the polypara-phenylene benzene film 12 is formed on the strippable dielectric layer 11 by vapor deposition. The reason why this product chose Parylene (or poly-para-xylylene) film 12 is mainly because it has the following excellent material properties, so that the antenna performance and service life of the film folded antenna can be improved. And applicable range: # 1·High reliability, suitable for military and commercial use; 2·Lightweight, relatively low density compared with other types of film; 3·No stress on each other ( Stress-free coating) does not affect the precision antenna circuit; 4) Low coefficient of friction, which can be used as a lubricating dry film; 5, Transparency, is a light transmissive film; Outgassing, basically does not contain any gas at all; 7. Excellent Outstanding barrier, extremely low water permeability and gas permeability; 8. Excellent antibacterial (Fungus and bacteria resistance); Mechanical properties, high Tensile Strength and high yield strength (YieidStrength); 10. Material conformity (conformation) at each position on the surface All have the same and uniform thickness; 9 M285054 11 · Wide temperature range, from -200 degrees Celsius to +200 degrees Celsius usable temperature range; 12 · Radiation resistance 'is available in outer space 13; Bio-compatible, relatively inert to biochemical and pharmaceutical ingredients; 14 · Better particle retention, can extend the life of the antenna; 15 · Solvent resistance, For common solvents with anti-solvent effect; 16 · Acid and base resistance; 17 · Insulation (Electrical breakdown), with high dielectric strength. Then, as shown in FIG. 1C, a conductive seed layer 13 is deposited on the parylene film 12. In this embodiment, the seed layer 13 may be copper/titanium (Cu/ Ti) metal, or other conductive materials. Then, a photoresist layer 14 (I^layer) of a predetermined pattern is formed on the seed layer 13 by semiconductor lithography, as a mold (M〇id) of the next step, "Electrical Mine", as shown in FIG. As shown by D, a metal plating process is performed, and a portion of the seed layer 13 not covered by the photoresist layer 14 is plated to form a metal circuit layer 15 (for example, copper or gold). Thereafter, the photoresist layer 14 and the seed layer 13 exposed to the outside are removed. The metal circuit layer 15 constitutes the antenna circuit layer. Finally, as shown in Fig. E, the poly(p-phenylene) film 12 plated with the metal circuit layer 15 (antenna circuit) can be peeled off from the substrate. Since the poly(p-phenylene benzene film) 12 is slightly viscous, it can be easily attached and bonded to various surfaces, which is very convenient to use and relatively inexpensive. Please refer to FIG. 2, which is a schematic diagram of the process of depositing poly(p-dimethylbenzene) thin film in the manufacturing method of the thin-clad stacked antenna of M285054. The step of depositing the parylene film as shown in Fig. 1B is as follows: Step ill 'vaporizes the t-dimethylbenzene material. In the present embodiment, the step of gas-forming the p-dimethylbenzene material may be carried out in an environment of about 150 degrees Celsius and about 1 second of gas pressure. Step 112, heating the vaporized poly-p-trimethylbenzene material to a predetermined height
溫。，本實施例中，加熱氣化後之聚對二甲基苯材料的步驟 可以疋在攝氏溫度680度左右及氣壓05拖耳左右的環境下 作。 ’、 步驟113，在一低壓環境中放置基板，並將聚對二甲基苯 材料導入，使料二甲基苯材料沈酬基板上。於本實施例 中，使聚對二甲基苯材料沈積到基板上的步驟可以是在攝氏 溫度25度左右及氣壓01拖耳左右的環境下操作。而該低壓 環境則係藉由一液態氮冷卻裝置114 (c〇ldtrap)配合一機械 式真空果 1141 ( Mechanical vacuum pump )來達成。 請參閱圖三與圖四，其分別係為本創作之薄膜折疊式天 線20之第一較佳實施例示意圖、以及將本創作之第一較佳實 施例薄膜折疊式天線20運用在一無線區域網路收發器3〇 (WLAN Dongle)上的實施例示意圖。 如圖三及圖四所示，本創作之薄膜折疊式天線2〇主要係 包括有：一聚對二曱基笨（parylene)薄膜21、以及形成在該 聚對二曱基苯薄膜21上的一天線電路層22。於本實施例中， 5亥天線電路層22係為一雙頻單極天線電路（Dual-band monopole antenna circuit)，且係更包括有：一天線線路（由 M285054 223與224構成）、一接地線路22]ί、以及一訊號線路222。該 天線線路的一端係分岔成狹長延伸之一第一線路223及一第 二線路224，該第一線路223與第二線路224所延伸之長度不 相等。於圖三所示之本實施例中，該第一線路223係呈一「j」 形結構，而第二線路224係呈一「7」形結構。該「1」形之 第一線路223與「7」形之第二線路224係由接地線路221大temperature. In the present embodiment, the step of heating the gasified polypara-p-dimethylbenzene material may be carried out in an environment of about 680 ° C and a pressure of about 05. ', step 113, placing the substrate in a low-pressure environment, and introducing the poly-p-dimethylbenzene material to make the dimethylbenzene material on the substrate. In the present embodiment, the step of depositing the parylene material onto the substrate may be carried out in an environment of about 25 degrees Celsius and a gas pressure of about 0.1. The low pressure environment is achieved by a liquid nitrogen cooling device 114 (c〇ldtrap) coupled with a mechanical vacuum pump 1141 (Mechanical vacuum pump). Referring to FIG. 3 and FIG. 4, respectively, a schematic diagram of a first preferred embodiment of the present invention, and a film folded antenna 20 of the first preferred embodiment of the present invention is applied to a wireless area. A schematic diagram of an embodiment on a network transceiver 3 (WLAN Dongle). As shown in FIG. 3 and FIG. 4, the film folding antenna 2 of the present invention mainly comprises: a parylene film 21, and a polyparaphenylene film 21 formed on the polyparaphenylene film 21. An antenna circuit layer 22. In this embodiment, the 5th antenna circuit layer 22 is a dual-band monopole antenna circuit, and further includes: an antenna line (consisting of M285054 223 and 224), and a grounding Line 22], and a signal line 222. One end of the antenna line is divided into a first line 223 and a second line 224 extending in a narrow length, and the length of the first line 223 and the second line 224 are not equal. In the embodiment shown in FIG. 3, the first line 223 has a "j"-shaped structure, and the second line 224 has a "7" shape. The first line 223 of the "1" shape and the second line 224 of the "7" shape are larger by the ground line 221
致朝相同一側方向延伸，而使得該天線線路實質上呈現一類 似有缺口之矩形框結構，且該第二線路224之延伸長度係大 於第-線路223。該接地線路221之一端係連接該天線線路之 另一端，而接地線路221之另一端係為接地31 (GND)。該 訊號線路222之-端係連接到天線線路之另一端，該訊號線 路222之另-端則可供連接到一訊號源32以供訊號傳輸。當 然，於無線區域網路收發器3〇上除了接地31與訊號源％之 外尚=置有其他電路元件，其位置大致係位於前述接地^ 的區域fe®内。然而由於無祕域娜收發器％之該些電路 7G件並非本辦之技轉徵，故0料其詳細構成。 ^參晒五，其係為針對如圖三所示之本創作薄膜折疊 式天線進行return loss模擬測試結果曲線圖。由圖五可知，如 圖三所示之本創作薄膜折疊式天線在2·4〜2.48 GHz與5·15The extension extends in the same side direction such that the antenna line substantially presents a rectangular frame structure which is notched, and the extension length of the second line 224 is greater than the first line 223. One end of the ground line 221 is connected to the other end of the antenna line, and the other end of the ground line 221 is grounded 31 (GND). The end of the signal line 222 is connected to the other end of the antenna line, and the other end of the signal line 222 is connectable to a signal source 32 for signal transmission. Of course, on the wireless local area network transceiver 3, in addition to the ground 31 and the source of the signal, other circuit components are placed, and the position is substantially in the area of the aforementioned grounding, fe®. However, due to the lack of the secret domain of the transceiver, the 7G parts of the circuit are not the technical transformation of the office, so the details of the composition. ^Part 5, which is a graph of return loss simulation test results for the created film folding antenna shown in Figure 3. As can be seen from Fig. 5, the folded film antenna of the present invention shown in Fig. 3 is at 2. 4 to 2.48 GHz and 5.15.
Zb:兩頻段均有良好通訊效能。故可翻於^ΑΝ 8〇2篇及WLAN 8GZlla雙紐之無魏域網路。 ’本創作之薄膜折疊式天線所使用的 …-甲土本4膜，其可以由N型聚對二甲基苯、c -甲基苯、或D型聚對二甲基苯擇—使用 : 分纖示有N型聚對二甲基苯(p—)、C圖二； 12 M285054 基苯（ParyleneC)、與D型聚對二甲基苯（ParyleneD)的化 學式。而在圖七中，則顯示有它們的材料特性，包括··表面 電阻（Surface resistivity;單位為 Onms )、介電常數（Dielectric consistant;當在 1MHz 時）、散佈係數（Dissipation factor ;當 在 1 MHz 時）、介電強度（Dielectric strength ;單位為 V/mile )、 拉伸強度（Tensile strength;單位為Mpa )、以及降服強度（Yieid strength ;單位為 psi)。 請參閱圖八，為本創作之薄膜折疊式天線40之第二較佳 實施例示意圖。該薄膜折疊式天線40同樣是雙頻單極天線電 路，且同樣包括有：一聚對二曱基苯薄膜41及一天線電路層 42，且天線電路層42同樣包括：一天線線路（由423與424 構成）、一接地線路421、以及一訊號線路422。該天線線路 的一端同樣是分岔成狹長延伸之一第一線路423及一第二線 路424。該第一線路423與第二線路424均分別係呈具複數彎 折之類似波形結構，且第一線路423與第二線路424係由接 地線路421朝相反方向延伸，且該第二線路424之延伸長度 (亦即彎折的數目）係大於第一線路423。 以上所述係利用較佳實施例詳細說明本創作，而非限制 本創作之範圍。大凡熟知此類技藝人士皆能明瞭，適當而作 些微的改變及調整，仍將不失本創作之要義所在，亦不脫離 本創作之精神和範圍。綜上所述，本創作實施之具體性，誠 已符合專利法中所規定之創作專利要件，謹請貴審查委員 惠予審視，並賜准專利為禱。 【圖式簡單說明】 13 M285054 ® - A至圖-E係為本創作之_折#式天線之製造方法 之一較佳實施例的流程圖。 圖二係為本創作之薄膜折疊式天線製造方法中，進行沈積 聚對二甲基苯薄膜的製程步驟示意圖^ 圖三係為本創作之薄膜折疊式天線之第一較佳實施例示意 圖。 圖四係為將本創作之圖三所示第一較佳實施例薄膜折叠式 天線運用在一無線區域網路收發器上的實施例示意 箏圖。 〜 圖五係為針對如圖三所示之本創作薄膜折疊式天線進行 return loss模擬測試結果曲線圖。 圖六係為本創作所使用的聚對二甲基苯化學式。 圖七係為如圖六所示之本創作所使用的聚對二甲基苯化學 式的材料特性表。 圖八係為本辦之薄膜折疊式天線之第二較佳實施例示意 圖〇 【主要元件符號說明】 10〜>6夕基板 12〜聚對二曱基苯薄膜 14〜光阻層 111、112、113〜步驟 1141〜真空泵 11〜可剝離介質層 13〜可導電種子層 15〜金屬電路層 114〜液態氮冷卻裝置 20、40〜薄膜折疊式天線 、41〜聚對二曱基笨薄膜22、42〜天線電路層 M285054 221、421〜接地線路 222、422〜訊號線路 223、423〜第一線路 224、424〜第二線路 30〜無線區域網路收發器 32〜訊號源 31〜接地 15Zb: Both bands have good communication performance. Therefore, it can be turned over to ^ΑΝ8〇2 and WLAN 8GZlla dual-news. 'The use of the film-folding antenna of this creation ... - the methane 4 film, which can be selected from N-type poly-p-dimethylbenzene, c-methylbenzene, or D-type poly-p-dimethylbenzene - use: The split fiber shows the chemical formula of N-type poly-p-dimethylbenzene (p-), C Figure 2; 12 M285054-based benzene (Parylene C), and D-type poly-p-dimethylbenzene (Parylene D). In Figure 7, the material properties are shown, including surface resistivity (Onms), dielectric constant (dielectric consistant; at 1MHz), and dispersion factor (Dissipation factor; when in 1) Dielectric strength (Dielectric strength; unit is V/mile), Tensile strength (Mpa), and Yield strength (Yieid strength; psi). Please refer to FIG. 8 , which is a schematic diagram of a second preferred embodiment of the film folded antenna 40 of the present invention. The film folded antenna 40 is also a dual-frequency monopole antenna circuit, and also includes a poly-p-diphenyl benzene film 41 and an antenna circuit layer 42, and the antenna circuit layer 42 also includes: an antenna line (by 423) And 424, a ground line 421, and a signal line 422. One end of the antenna line is also divided into a first line 423 and a second line 424 which are elongated and elongated. The first line 423 and the second line 424 are respectively in a similar waveform structure with a plurality of bends, and the first line 423 and the second line 424 are extended by the ground line 421 in opposite directions, and the second line 424 The length of extension (i.e., the number of bends) is greater than the first line 423. The above description of the present invention is explained in detail by the preferred embodiments, and is not intended to limit the scope of the present invention. Those who are familiar with such art can understand that appropriate changes and adjustments will not lose the essence of this creation, nor will they deviate from the spirit and scope of this creation. To sum up, the specificity of the implementation of this creation has been in line with the requirements for the creation of patents as stipulated in the Patent Law. I would like to ask your review committee to give a review and grant the patent as a prayer. [Simple description of the drawing] 13 M285054 ® - A to Figure-E is a flow chart of a preferred embodiment of the manufacturing method of the present invention. Fig. 2 is a schematic view showing a process of depositing a poly(p-dimethylbenzene) film in the method for fabricating a film-folded antenna of the present invention. Fig. 3 is a schematic view showing a first preferred embodiment of the film-folded antenna of the present invention. Figure 4 is a schematic illustration of an embodiment of the first preferred embodiment of the film-folding antenna shown in Figure 3 of the present invention applied to a wireless local area network transceiver. ~ Figure 5 is a graph showing the return loss simulation test results for the created film folding antenna shown in Figure 3. Figure 6 is the poly(p-dimethylbenzene) chemical formula used in this creation. Figure 7 is a table showing the material properties of the poly(p-dimethylbenzene) chemical used in the creation shown in Figure 6. Fig. 8 is a schematic view showing a second preferred embodiment of the film folding antenna of the present invention. [Main component symbol description] 10~>6 夕 substrate 12~poly-p-diphenyl benzene film 14~ photoresist layer 111, 112 113 to step 1141 to vacuum pump 11 to strippable dielectric layer 13 to conductive seed layer 15 to metal circuit layer 114 to liquid nitrogen cooling device 20, 40 to film folded antenna, 41 to polyparafluorinated film 22, 42~ Antenna circuit layer M285054 221, 421~ Ground line 222, 422~ Signal line 223, 423~ First line 224, 424~ Second line 30~ Wireless area network transceiver 32~ Signal source 31~ Ground 15