M272232 八、新型說明： 【新型所屬之技術領域】 本創作是有關於一種二極體封裝結構，尤指一種可解決 高功率瓦級LED封裝體散熱問題及提高承載瓦特數，延長使 用壽命，不僅能迅速有效地散熱，使功率達最大化以獲得最 大照明光通量流明數，並以不同之電路組合使能源管理更為 方便有效。 【先前技術】 由於發光二極體（LED)具有省電、反應速度快、耐震、 耐天候因素、壽命長、環保相容、色彩多變化等優勢，應用 領域非常廣泛，包括顯示器背光源、看板、警示燈、交通號 誌、汽車燈、及一般照明燈等多方面。以照明應用為例，比 起傳統白熾燈，LED省電效率已達一倍以上，且壽命延長許 多，尤其在全球環保意識抬頭及能源危機之陰影下，LED應 •用在室内外照明市場上以取代傳統白熾燈及螢光燈已是未 來照明光源之主流。唯LED應用於一般室内外照明時，必須 達到高功率高光效等基本要求，才有實值效益。 應用於一般室内外照明之LED其性能欲達到高功率高 光效等基本要求’蟲晶晶粒本身應具有大功率及南發光置子 效率固然重要，而其下游整體封裝技術，特別是高效率散熱 設計，亦同樣不可忽視。LED雖然號稱冷光，但是，點燃時， 因其消耗之功率大至瓦級以上之緣故，在晶粒發光層仍有大 M272232 量熱能產生，該熱能必須藉傳熱性良好之封裝材料及機構儘 速引導至周遭並且有效地散熱至空氣中，以免溫度過高影響 二極體之發光效率，乃至於縮減使用壽命甚至燒毀。所以， 就高功率LED封裝結構設計而言，如何獲得最佳散熱效果實 為重要課題。 按，傳統高功率LED之封裝體結構，就基板部份而言， 不外以下二種： 1·在金屬基板上開單口凹穴，而於該單口凹穴内封裝一 •至多顆LED晶粒，其缺點是可容納LED晶粒之總顆數有限， 無法構裝成高功率之模組，或是即使能容納多顆LED晶粒， 其熱能過度集中將使溫度過高而影響LED使用壽命。該結構 因重點在單口凹穴而與本創作有明顯不同。本創作因複數個 LED晶粒分散在複數個凹穴内，可輕易克服上述容納LED 晶粒之總顆數有限，或容納多顆LED晶粒時其熱能過度集中 等缺點。 2.在金屬基板上開多口凹穴，而於該多口凹穴内各封裝 一顆LED晶粒，其結構與本創作複數個LED晶粒在印刷電 路、複數個導線銲接點、複數個凹穴等多種可能組合下，可 隨意選擇串聯、並聯、混合串並聯、或單獨供電等多重電路 組合，亦有明顯不同。 【新型内容】 本創作之主要目的係在於，可藉由基板另一面之散熱體 解決高功率瓦級LED封裝體散熱問題及提高承載瓦特數，延 M272232 長使用壽命，不僅能迅速有效地散熱，使功率達最大化以獲 · 得最大照明光通量流明數。 · 本創作之另一目的係在於，可使各晶粒以串聯、並聯、 混合串並聯、或單獨供電之組合與基板上之印刷電路及導線 銲接點搭配，以達到不同之電路組合，使能源管理更為方便 有效。 為達上述之目的，本創作係一種二極體封裝結構，其包 含有一表面係具有複數個凹穴之基板，各凹穴係連接有印刷 •電路，且凹穴與印刷電路間係具有複數之導線銲接點，並於 基板上具有與印刷電路連接之電極板；複數個設置於複數個 凹穴中之晶粒，各晶粒可與基板上之印刷電路及導線銲接點 搭配；一封蓋於凹穴中並形成一晶粒透光部之保護層；以及 一結合於基板之另一面上之散熱體。 【實施方式】 Φ 請參閱『第1、2及第3圖』所示，係本創作之俯視狀 態示意圖、本創作之剖面狀態示意圖及本創作另一實施狀態 之剖面示意圖。如圖所示：本創作係一種二極體封裝結構， 其係由一基板1、複數個晶粒2、一保護層3及一散熱體 4，可解決高功率瓦級LED封裝體散熱問題及提高承載瓦特 數，延長使用壽命，不僅能迅速有效地散熱，使功率達最大 化以獲得最大照明光通量流明數，並以不同之電路組合使能 源管理更為方便有效。 上述所提之基板1之一表面係具有複數個凹穴1 la、 7 M272232 11匕、11(：、11〇1，各凹穴113、11卜11。、11 d表面係經平滑處理，以強化對LED光波之 凹穴⑴、Hb、Uc、lld係呈一上寬下窄之果圓錐狀各 其上、下圓徑係介於1·5-8·0γπγτί之間，以3.0-6.0mm為最佳，M272232 8. Description of the new type: [Technical field to which the new type belongs] This creation is about a diode packaging structure, especially a type that can solve the heat dissipation problem of high-power watt-level LED packages and increase the carrying wattage and extend the service life. It can dissipate heat quickly and efficiently, maximize the power to obtain the maximum luminous flux, and use different circuit combinations to make energy management more convenient and effective. [Previous technology] Because light-emitting diodes (LEDs) have the advantages of power saving, fast response speed, shock resistance, weather resistance, long life, environmental protection compatibility, multiple color changes, etc., they have a wide range of applications, including display backlights, kanbans , Warning lights, traffic lights, car lights, and general lighting. Take lighting applications as an example. Compared with traditional incandescent lamps, LEDs have more than doubled the power saving efficiency and extended their lifespan. Especially in the shadow of global environmental awareness and the energy crisis, LEDs should be used in the indoor and outdoor lighting market. To replace traditional incandescent and fluorescent lamps has become the mainstream of future lighting sources. Only when LED is used in general indoor and outdoor lighting, it must meet the basic requirements such as high power and high light efficiency to have real value benefits. The performance of LEDs used in general indoor and outdoor lighting is to meet the basic requirements such as high power and high light efficiency. It is important that the worm crystal grain itself has high power and the efficiency of the South LED, and its downstream overall packaging technology, especially high efficiency heat dissipation The design cannot be ignored. Although LED is known as cold light, when it is ignited, due to the power it consumes is greater than watt level, there is still a large amount of M272232 calorific energy generated in the light emitting layer of the die. This thermal energy must be consumed by packaging materials and mechanisms with good thermal conductivity. Quickly guide to the surrounding area and effectively dissipate heat into the air, so as to avoid the high temperature affecting the luminous efficiency of the diode, and even reducing the service life or even burning. Therefore, in terms of high-power LED package structure design, how to obtain the best heat dissipation effect is an important issue. According to the package structure of traditional high-power LEDs, as far as the substrate is concerned, the following two types are available: 1. Open a single hole in the metal substrate, and package one or more LED dies in the single hole, The disadvantage is that the total number of LED dies that can be accommodated is limited, and it cannot be configured as a high-power module, or even if it can accommodate multiple LED dies, the excessive concentration of thermal energy will cause the temperature to be too high and affect the LED service life. The structure is significantly different from this creation because the emphasis is on the single-pit recess. In this creation, because a plurality of LED dies are dispersed in a plurality of cavities, the shortcomings of the above-mentioned limited total number of accommodating LED dies, or excessive concentration of thermal energy when accommodating multiple LED dies can be easily overcome. 2. Multiple holes are opened on the metal substrate, and one LED die is packaged in each of the multiple holes. The structure is similar to the original creation of multiple LED die in printed circuits, multiple wire solder joints, and multiple recesses. With multiple possible combinations such as acupoints, multiple circuit combinations such as series, parallel, mixed series-parallel, or separate power supply can be selected at will, and there are also obvious differences. [New content] The main purpose of this creation is to solve the heat dissipation problem of high-power watt-level LED packages and increase the load wattage by using a heat sink on the other side of the substrate, extending the long life of M272232, which can not only quickly and effectively dissipate heat, Maximize the power to obtain the maximum luminous flux. · Another purpose of this creation is to enable each die to be combined with series, parallel, hybrid series and parallel, or separate power supply combinations with printed circuits and wire solder joints on the substrate to achieve different circuit combinations and energy Management is more convenient and effective. In order to achieve the above purpose, this creation is a diode packaging structure, which includes a substrate with a plurality of recesses on the surface, each recess is connected to a printed circuit, and the recess and the printed circuit have a plurality of Wire bonding points, and an electrode plate connected to the printed circuit on the substrate; a plurality of crystal grains arranged in a plurality of cavities, and each crystal grain can be matched with the printed circuit and wire bonding points on the substrate; A protective layer of light-transmitting portions of the crystal grains is formed in the cavity; and a heat sink is bonded to the other surface of the substrate. [Embodiment] Φ Please refer to [Figures 1, 2 and 3], which are a schematic view of the top view of this creation, a schematic view of the cross section of this creation, and a sectional view of another implementation state of this creation. As shown in the figure: this creation is a diode packaging structure, which consists of a substrate 1, a plurality of dies 2, a protective layer 3, and a heat sink 4, which can solve the heat dissipation problem of high-power watt-level LED packages and Increasing the load wattage and extending the service life can not only quickly and efficiently dissipate heat, maximize power to obtain the maximum luminous flux lumens, and use different circuit combinations to make energy management more convenient and effective. One of the surfaces of the substrate 1 mentioned above has a plurality of cavities 11a, 7M272232, 11k, 11 (:, 1101, each of the cavities 113, 11 and 11), and the surface of 11d is smoothed to Strengthen the LED light wave cavity ⑴, Hb, Uc, lld are a cone with a wide upper and a narrow lower, and the upper and lower circle diameters are between 1 · 5-8 · 0γπγτί, 3.0-6.0mm For best,
D 而凹穴 0.4-3.0mm之間，以〇.6-1e5mm為最佳，又各凹穴i ia、工 1 b、1 1 c、1 1 d之傾斜角大小係介於〇-6〇度之間以 度為最佳，而各凹穴i la、1 lb、1 lc、2 ld係連接有 印刷電路1 2，且凹穴i la、i lb、i lc、i ld與印刷 電路1 2間係具有複數之導線銲接點i 3，並於基板丄上具 有與印刷電路1 2連接之電極板1 4、工5、工6、工7、 18，該電極板14、15、16、17、18，則為提供 外部驅動丨C及DC電源供應器電線正負端銲接使用，而該基 板々1係可為具有高傳熱性及散熱性之銘、銘合金、銅、銅合 金等金屬基材，該基材表面藉由傳熱性良好之絕緣膠與銅箔 φ膠合，該銅箔再經由蝕刻技術形成印刷電路丄2、複數個導 線銲接點1 3及電極板1 4、1 5、1 6、1 7、1 8 ,其 金屬基材與印刷電路i 2之間係具有一絕緣層丄丄丄(如第 2圖所不），又，該基板i係具有高傳熱性及散熱性之氮化 鋁、氧化結、碳化矽、氮化爛 '碳複合材料、或陶瓷基材等 材質所製成’並藉由—般物理蒸鑛法、網印法、或共燒法形 成印刷電路1 2、複數個導線銲接點1 3及電極板工4、丄 5 16 1 7、1 8 (如第3圖所示），另於該基板1上係 具有複數個用以支撐塑膠透鏡之塑膠透鏡支腳孔i 9，藉以 M272232 使該晶粒2光視角規格化，例如，30度、60度、120度、或 其它角度。 各晶粒2係經固晶、銲線、樹脂封膠等製程成型於上述 複數個凹穴1 la、11b、11c、lld中，使每一個凹穴 1 la、1 lb、1 ic、1 id中，含有〇個、1個、或複數個 晶粒2 (合計至少有一凹穴含有晶粒），而銲線時，係利用微 細金屬導線2 1將晶粒2之π-極及p-極分別與凹穴1 ia、1 1 b、1 1 C、；！ i d外圍之複數個導線銲接點1 3銲接，而 鲁各a曰粒2係可以串聯、並聯、混合串並聯、或單獨供電之組 合與基板1上之印刷電路i 2及導線銲接點丄3搭配，且該 晶粒2係可為高功率瓦級LED晶粒。 该保護層3係封蓋於上述凹穴1 la、1 ib、1 ic、 1 Id中，並形成一晶粒2之透光部，而該保護層3係為高 透光性耐熱性樹脂（或混合螢光材料之樹脂）所製成，該樹脂 係具有耐熱性、對可見光（波長範圍450_65〇nm)有高透光性 馨之樹脂，包括環氧樹脂' 矽酮樹脂等。 該散熱體4係結合於上述基板i之另一面上，該散熱體 4係為一鰭片形金屬，而該散熱體4係藉由螺絲鎖緊或導熱 膠膠合於基板1之另-面上。如是，藉由上述之結構構成= 全新之二極體封裝結構。 清參閱『第4及4 A圖』所示，係本創作第一使用例之 俯視狀態圖及本創作第一使用例之電路圖。如圖所示：當本 創作運用於單顆高功率LED之電路應用，將長寬約X 1mm之高功率led晶粒2 —顆，於基板1上之凹穴丄丄a中 M272232 經固晶、銲、線、樹脂封裝等製作程序後，其P-極及n•極分 别與凹八1 1 a外圍之導線銲接點工3銲接而形成口·極與電 極板1 6連接，並使n_極與電極板i 5連接之電路，本使用 例以第4 A圖表示之，其中⑴與㈠分別表示連接led外部驅 動1C及DC電源供應器電線之正端與負端。當然以單顆高功 率LED之電路應用除本使用例外，尚有其它類似之搭配因 原理相同不另說明。 請參閱『第5、5A及第6、6A圖』所*，係本創作第 一使用例之俯視狀態圖、本創作第二使用例之電路圖及本創 作第三使用例之俯視狀態圖、本創作第三使關之電路圖。 如圖所示：當本創作運用二顆高功率LED之串聯電路應用 寺例如第5或6圖所示；先以第5圖為說明例，將二顆長 寬約1mm X 1mm之高功率LED晶粒2，分別於基板卫上之二 ^穴1 1 a、1 1 b甲各置放一顆，在固晶、鲜線、樹脂封裝 等製作程序中’使凹穴i ! a之晶粒2其|3•極接電極板丄 #6 ’ η-極接凹穴1 ；^中晶粒2之口·極，凹穴1 ib之晶粒2 n_極則接電極板1 4，於是形成第5 A圖之串聯電路。同理， 如第6圖所示，二顆高功率led晶粒2分別置放於基板工上 之凹穴1 1 b及1 1 c中各一顆，形成第6 A圖之之串聯電 路。二顆高功率LED之晶粒2串聯電路應用，除上述二種實 例外’尚有其它種類似之組合，因原理相同不另說明。 請參閱『第7及7A圖』所示，係本創作第四使用例之 俯視狀態圖及本創作第四使用例之電路圖。如圖所示：當本 創作運用三顆高功率LED之晶粒2於串聯電路應用時， M272232 圖所不，係將長寬約之高功率LED晶粒2三顆， 分別置放於基板工上之凹穴工lb、工1(：及1 ld中各一 顆，在固晶、銲線、樹脂封裝等製作程序中，使凹穴丄ib 之晶粒2其p-極接電極板χ 5 ,门_極接凹穴1 lc之晶粒2 P·極，凹穴lie之晶粒2n_極接凹穴1 1“.2ρ_極，凹 穴1 1 d之晶粒2 η-極接電極板1 8 ,於是形成如第7A圖之 串聯電路。三顆高功率LED之串聯電路應用，除上述實例 外，尚有其它種類似之組合，因原理相同不另說明。 _ 晴參閱『第8〜1 3圖』所示，係本創作第五使用例之 俯視狀態圖〜第十使用例之俯視狀態圖。如圖所示··當然本 創作除可為上述各使用例之外，亦可作為其它電路之應用， 包括四顆高功率LED晶粒2之串聯（如第8圖所示），或二顆 並聯（如第9、1 〇圖所示），或四顆二串二並聯（如第i丄圖 所示），或R/Y/G/B四顆LED四獨力電源（如第工2圖所示）， 或八顆串聯（如第i 3圖所示）等等，多樣化之應用電路。 春由上述各實施例中可將本創作之特色可歸納如下·· 1 ·除基板1基材傳熱性及散熱性良好外，其複數個凹穴 内1 la、1 lb、1 lc、1 Id可同時配置〇個、>|個、或複 數個LED晶粒（合計至少有一凹穴含有晶粒），使整體模組功 率達最大化。舉例言之，在本創作，其中有一種基板i之設 計含有個四個凹穴i la、lb、i lc、工ld，假設每一 T凹穴1 la、工lb、i lc、工ld内封裝二顆同色系LED 晶粒2，每顆晶粒光通量約為30流明，則該八顆lED不論串 聯並聯、或混合串並聯，總光通量都可高達24〇流明左右。 M272232 同理，該同一基板1其凹穴1 la、1 lb、1 lc、1 Id數 目維持不變，但是晶粒2顆數變成每凹穴1 1 a、1 1 b、1 1 c、1 1 d三顆，則總共十二顆LED其總光通量更可高達360 流明左右。因此，本封裝體將可普遍應用於室内外照明。 2·該複數個晶粒2可以是同色系光或是不同色系光，在 不同色系光之情況下，更可外加適當之LED驅動器產生白光 或混合色光。 3.該LED晶粒2因係分散於複數個凹穴1 1 a、1 1 b、 1 lc、1 id内，並配合散熱體4，使熱能不致於過度集中 某定點而產生過高溫現象。 综上所述，本創作二極體封裝結構可有效改善習用之種 種缺點，可解決高功率瓦級LED封裝體散熱問題及提高承載 瓦特數，延長使用壽命，不僅能迅速有效地散熱，使功率達 最大化以獲得最大照明光通量流明數，並以不同之電路組合 使能源管理更為方便有效，進而使本創作之產生能更進步、 丨更實用、更符合使用者之所須，確已符合新型專利申請之要 件，爰依法提出專利申請。 惟以上所述者，僅為本創作之較佳使用例而已，當不能 以此限定本創作實施之範圍；故，凡依本創作申請專二範= 及創作說明書内容所作之簡單的等效變化與修飾，皆應仍 本創作專利涵蓋之範圍内。 【圖式簡單說明】 12 M272232 第1圖，係本創作之俯視狀態示意圖。 第2圖，係本創作之剖面狀態示意圖。 f 3圖，係本創作另一實施狀態之剖面示意圖。 第4圖，係本創作第一使用例之俯視狀態圖。 第4 A圖，係本創作第一使用例之電路圖。 ^ 5圖，係本創作第二使用例之俯視狀態圖。 第5A圖，係本創作第二使用例之電路圖。 第6圖，係本創作第三使用例之俯視狀態圖。 第6A圖’係本創作第三使用例之電路圖。 第7圖，係本創作第四使用例之俯視狀態圖。 第7 A圖’係本創作第四使用例之電路圖。 ^ 8圖’係本創作第五使用例之俯視狀態圖。 ^ 9圖’係本創作第六使用例之俯視狀態圖。 第1 0圖’係本創作第七使用例之俯視狀態圖。 第1 1圖，係本創作第八使用例之俯視狀態圖。 第1 2圖，係本創作第九使用例之俯視狀態圖。 第1 3圖’係本創作第十使用例之俯視狀態圖。 【主要元件符號說明】 基板1 凹穴 1 la、1 lb、工 lc、工 ld 絕緣層1 1 1 印刷電路1 2 導線銲接點1 3 13 M272232 電極板14、15、16、17、18 塑膠透鏡支腳孔19 晶粒2 金屬導線2 1 保護層3 散熱體4D, and the cavity is between 0.4-3.0mm, and the best is 0.6-1e5mm, and the inclination angle of each cavity i ia, 1b, 1c, and 1d is between 0-6. Between the degrees, the degree is the best, and each of the pockets i la, 1 lb, 1 lc, 2 ld is connected to the printed circuit 12, and the pockets i la, i lb, i lc, i ld and the printed circuit 1 The two rooms have a plurality of wire bonding points i 3, and on the substrate 丄 have electrode plates 14, 5, 6, 7, 18 connected to the printed circuit 12, the electrode plates 14, 15, 16, 17, 18, in order to provide external drive 丨 C and DC power supply wire positive and negative terminal welding, and the substrate 々1 series can be high heat and heat dissipation of the Ming, Ming alloy, copper, copper alloy and other metals Substrate, the surface of the substrate is glued to copper foil φ with an insulating adhesive with good heat transfer properties, and the copper foil is then used to form a printed circuit 蚀刻 2 by etching technology, a plurality of wire bonding points 1 3, and electrode plates 1 4 and 1 5 , 16, 17, 17, 18, the metal substrate and the printed circuit i 2 have an insulating layer 如 (as shown in Figure 2), and the substrate i has high heat transfer properties and Heat dissipation aluminum nitride, oxygen Made of materials such as chemical compounds, silicon carbide, nitrided carbon composite materials, or ceramic substrates, and printed circuits are formed by general physical vaporization, screen printing, or co-firing. 1 2. Multiple Lead welding points 13 and electrode plate workers 4, 工 5 16 1 7, 18 (as shown in Figure 3), and the substrate 1 has a plurality of plastic lens foot holes i for supporting plastic lenses. 9. Use M272232 to standardize the light angle of the die 2 light, for example, 30 degrees, 60 degrees, 120 degrees, or other angles. Each crystal grain 2 is formed in the above-mentioned plurality of cavities 1 la, 11b, 11c, and lld by processes such as solid crystal bonding, wire bonding, and resin sealing, so that each of the cavities 1 la, 1 lb, 1 ic, and 1 id Contains 0, 1, or a plurality of grains 2 (a total of at least one recess contains the grains), and when bonding wires, the π-pole and p-pole of the grains 2 are made using a fine metal wire 21 And pits 1 ia, 1 1 b, 1 1 C, respectively ;! A plurality of wire bonding points 1 and 3 on the periphery of the ID are welded, and the Lug a series 2 can be connected in series, parallel, mixed series and parallel, or individually powered with the printed circuit i 2 and the wire bonding point 丄 3 on the substrate 1. Moreover, the die 2 can be a high-power watt-level LED die. The protective layer 3 is covered in the above-mentioned cavities 1 la, 1 ib, 1 ic, 1 Id, and forms a light-transmitting portion of the crystal grain 2, and the protective layer 3 is a highly light-transmissive heat-resistant resin ( Or resin made of fluorescent materials), this resin is a resin with heat resistance and high transmittance to visible light (wavelength range 450-650nm), including epoxy resin and silicone resin. The heat sink 4 is bonded to the other side of the substrate i, the heat sink 4 is a fin-shaped metal, and the heat sink 4 is glued on the other side of the substrate 1 by screw locking or thermally conductive adhesive. . If so, use the structure described above = brand new diode package structure. Please refer to “Figures 4 and 4 A” for the top view of the first use case and the circuit diagram of the first use case. As shown in the figure: When this application is applied to the circuit application of a single high-power LED, 2 high-power LED grains with a length and width of about X 1mm are placed in the cavity 丄 丄 a on the substrate 1 through M272232. After welding, welding, wire, resin encapsulation and other manufacturing procedures, the P-pole and n • pole are respectively welded with the wire solder joints 3 on the periphery of the recess 1 1 a to form the mouth · pole and the electrode plate 16 and make n The circuit connecting the pole to the electrode plate i 5 is shown in Figure 4A in this use case, where ⑴ and ㈠ denote the positive and negative ends of the wires connected to the LED external drive 1C and DC power supply, respectively. Of course, the circuit application of a single high-power LED is except for this application. There are other similar matching reasons and the same principles will not be explained. Please refer to the "Figures 5, 5A and 6, 6A" * for the top view of the first use case of this creation, the circuit diagram of the second use case of this creation, and the top view of the third use case of this creation, this Create the circuit diagram of the third pass. As shown in the figure: When this creation uses two high-power LEDs in a series circuit application example, as shown in Figure 5 or Figure 6; first use Figure 5 as an example to illustrate two high-power LEDs with a length and width of about 1mm X 1mm. Die 2, place one on each of the two holes on the substrate, ^ holes 1 1 a, 1 1 b, and make the holes i! A in the solid crystal, fresh wire, resin packaging and other manufacturing procedures 2 其 | 3 • pole connected to the electrode plate 丄 # 6 'η-pole connected to the cavity 1; the mouth of the grain 2 and the pole, the grain of the cavity 1 ib 2 n_ pole is connected to the electrode plate 1 4, so Form the series circuit of Figure 5A. Similarly, as shown in FIG. 6, two high-power LED chips 2 are placed in each of the recesses 1 1 b and 1 1 c on the substrate substrate to form a series circuit in FIG. 6A. In the application of two high-power LEDs with a series of two crystal chips, in addition to the two above-mentioned exceptions, there are other similar combinations. Since the principles are the same, no further explanation will be given. Please refer to "Figures 7 and 7A" for the top view state diagram of the fourth use case of this creation and the circuit diagram of the fourth use case of this creation. As shown in the figure: When this creation uses three high-power LED chips 2 for series circuit applications, the M272232 picture does not show that two high-power LED chips with length and width of about two are placed on the substrate. Each of the upper cavity workers lb, 1 (:, and 1 ld) is used to make the crystal grains 2 of the cavity 丄 ib and the p-pole of the electrode plate χ in the production process of die-bonding, bonding wire, resin packaging, etc. 5, gate_pole is connected to the crystal grains of 1 lc 2 P · pole, and the grain of the cavity lie 2n_pole is connected to the crystal grains of 1 1 ". 2ρ_ pole, the crystal is 2 1 d to the crystal grains 2 η-pole Connect the electrode plate 18, so the series circuit as shown in Figure 7A is formed. In addition to the above examples, there are other similar combinations for the series circuit of three high-power LEDs. Because the principles are the same, it will not be explained. _ See also " Figures 8 ~ 13 "are the top view of the fifth use case of this creation ~ the top view of the tenth use case. As shown in the picture, of course, this creation can be used in addition to the above use cases, Can also be used for other circuits, including four high-power LED chips 2 in series (as shown in Figure 8), or two in parallel (as shown in Figures 9 and 10), or four two Two in parallel (as shown in Figure i), or four LED R / Y / G / B four independent power supplies (as shown in Figure 2), or eight in series (as shown in Figure i 3), etc. The various application circuits can be summarized in the above-mentioned embodiments. The characteristics of this creation can be summarized as follows: 1 · In addition to the good heat transfer and heat dissipation properties of the substrate 1 and the substrate, the plurality of cavities 1 la, 1 lb, 1 lc, 1 Id can be configured with 0, > |, or multiple LED dies (at least one cavity contains dies in total) to maximize the overall module power. For example, in In this creation, there is a design of a substrate i that contains four recesses i la, lb, i lc, and ld. It is assumed that two T-cavities 1 la, lb, i lc, and ld are packaged with two same-color systems. LED die 2, the luminous flux of each die is about 30 lumens, the total luminous flux of the eight LEDs can be as high as about 24 lumens, whether in series or parallel or hybrid series and parallel. M272232 Similarly, the same substrate 1 has a cavity The number of 1 la, 1 lb, 1 lc, 1 Id remains unchanged, but the number of 2 grains becomes 3 1 1 a, 1 1 b, 1 1 c, 1 1 d per cavity, and a total of twelve The total luminous flux of an LED can be as high as about 360 lumens. Therefore, the package can be widely used in indoor and outdoor lighting. 2. The plurality of crystal grains 2 can be the same color light or different color light, in different color systems In the case of light, an appropriate LED driver can be added to generate white light or mixed color light. 3. The LED die 2 is dispersed in a plurality of cavities 1 1 a, 1 1 b, 1 lc, 1 id, and cooperates The heat radiating body 4 prevents the thermal energy from being excessively concentrated at a certain point and causing an excessively high temperature phenomenon. To sum up, this creative diode package structure can effectively improve various shortcomings, can solve the heat dissipation problem of high-power watt-level LED packages, increase the carrying wattage, and extend the service life. To maximize the number of luminous flux lumens, and use different circuit combinations to make energy management more convenient and effective, so that the production of this creation can be more advanced, more practical, and more in line with the needs of users, it is indeed in line with For the requirements of a new patent application, a patent application is filed in accordance with the law. However, the above are only good examples of the use of this creation, and should not be used to limit the scope of implementation of this creation; therefore, any simple equivalent changes made in accordance with the content of this application for application and the content of the creation manual And modifications should be within the scope of this creative patent. [Schematic description] 12 M272232 The first figure is a schematic diagram of the top view of this creation. Figure 2 is a schematic diagram of the cross-sectional state of this creation. Figure 3 is a schematic sectional view of another implementation state of this creation. Figure 4 is a top view of the first use case of this creation. Figure 4A is the circuit diagram of the first use case of this creation. ^ Figure 5 is a top view of the second use case of this creation. Figure 5A is a circuit diagram of the second use case of this creation. Fig. 6 is a top view of the third use case of this creation. Fig. 6A 'is a circuit diagram of the third use case of this creation. Fig. 7 is a top view of the fourth use case of this creation. Fig. 7A 'is a circuit diagram of the fourth use case of this creation. ^ Figure 8 'is a top view of the fifth use case of this creation. ^ Figure 9 'is a top view of the sixth use case of this creation. Fig. 10 'is a top view of the seventh use case of this creation. Figure 11 is a top view of the eighth use case of this creation. Figure 12 is a top view of the ninth use case of this creation. Fig. 13 'is a top view of the tenth use case of this creation. [Description of main component symbols] Substrate 1 Recess 1 la, 1 lb, lc, ld Insulation layer 1 1 1 Printed circuit 1 2 Wire solder joint 1 3 13 M272232 Electrode plate 14, 15, 16, 17, 18 Plastic lens Foot hole 19 Die 2 Metal wire 2 1 Protective layer 3 Radiator 4
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