TWM241877U - Soft-switching control circuit - Google Patents

Description

M241877 V. Creation instructions (1) 1. [The new type of soft, step-up and source converter converter 1. [The previous technology has a better target because of the technology supply system. ' Roads, lighting, etc. Therefore, only by giving points to play these systems, electronic specifications and performance require continuous system performance. In the application of the brain, they often override the power supply and development. With the most common voltage architecture, a universal buck converter is a device. The advantage is that the technology of the jaw-domain switching control circuit is a step-down type of three power-switching power technologies. Progress has been gradually improved, and stability and high-efficiency limited energy have become increasingly important. "Heavier and heavier" is the need to design through the power supply system for high stability and integration of its unique power products, and electrical evolution and progress. It is easy to be ignored because there are no other technical considerations when designing electricity. In cooperation with the converter, the loss and the rate of electricity, power and electronics are also reduced. Give a variety of different high-efficiency performance. The design of the system is based on the considerations of most of the system, especially the battery life. This also affects the control switch applied to the step-down type, which can reduce the electromagnetic interference of the south frequency switching type. Technology has also been continuously improved, and engineers have been pursuing and breaking through high-efficiency power electronics technology. Power, communication, control, and power electronics products can only be charged by users based on the structure and performance of the electronic system. It is said that the power supply lies in the so-called tabletop power problem, so the cost-based thinking logic greatly reduces the future of Buck converters for power supply design. It is used in various products, linear converters The two major architectures of f and switching are fetched. Generally speaking, the linear conversion structure is simple, and the wheel noise is low. It does not require a lot of output power.

Page 5 M241877 V. Creation Instructions (2) _ Rong ’and quick temporary bear sculpture. The voltage difference between input and output; :: The point of the quantity is the efficiency difference, because in the power conversion design with too large a voltage difference. It is not suitable to convert Li's effect structure, because the inductor is used as an energy storage converter, and the power can be as high as compared to the line. : The range beyond high efficiency. For the use of, and α, linear converters cannot be used. In addition, the current power electronics products continue to be short, +,.. Switching converters are being used in large numbers. "Exhibit 2 = Reliability must also be continuously more secure and safer. A better power supply system requires a more comprehensive and thoughtful control method. ^ Switching power converters are widely used in general power electronics because of their shortness and lightness. Buck converters, buck converters, Boost converter (B〇〇st 〇nver :: = turn 2 (BUCk-B〇〇s ". Nverter) is more often used; Road & structure 'H #『 第 1 图 』shown This is a schematic diagram of the circuit structure of the knowing reducer. In the circuit architecture, the main switch S is used to cooperate with the energy storage inductor L and the flywheel diode D to perform non-isolated processing and conversion. (According to the main switch S, energy storage The relative connection position of the inductor L and the flywheel diode circuit is different. The schematic diagram of the voltage converter circuit structure shown in "Figure 2" and the habit shown in "Figure 3" = step-down converter Schematic diagram of circuit architecture.) Σ Page 6 M241877 V. Creation (3) Although = converters can improve the shortcomings of traditional linear converters, such as low efficiency, weight and weight, switchers (switches) generate a large amount of power loss at high frequencies. And electromagnetic interference, so such as improving the efficiency of the system, reducing electromagnetic interference and improving the power conversion system, σ will be the bottleneck of power electronics technology to be broken through. Buck converters, boost converters that are just used to change eyes The switch S and the flywheel diode D are rigidly switched when the converter and the step-up / step-down frequency i are in operation. The power loss caused by the operation of the switch V will increase. If the switch is turned off, the voltage switch or High current switching, the loss is even more increased, and the shortcomings Γ voltage and high current stress will cause the cost of parts in production to increase. [New content] The main purpose of this book is to solve the above-mentioned shortcomings. Avoiding the habit, this creation is to provide a power-type dry operation that can easily achieve effective reduction of original loss switch switching and reduction of flywheel diode conduction. The main purpose is to use the main switch and flywheel diode position. The primary and secondary switches are replaced at the place where the step-down dynamic switch is turned off and the step-up and step-down converter. The relationship between the active switch and the sub-open includes the two semiconductor field effect transistors (m0sfet). ), And a diode, the source μ) of the positive a is extremely coupled to the metal oxide semiconductor field effect transistor, the drain, extremely coupled to the metal oxide semiconductor field effect transistor, one end is connected) , + ,,-A parasitic output capacitor. The parasitic output capacitor has the positive pole of the w-pole at both ends and the negative pole of the diode at the other end. Take M241877. Creation instructions (4) A set of active switches with the original input The secondary control signal whose main control signal is reversed is input to the secondary switch. If so, the active switch and the secondary switch have bidirectional characteristics, so the inductor can be operated in Discontinuus Conduction Mode to make the voltage drop across the active switch and the secondary switch to Zero, reaching zero voltage switching (ZerOvOltage Switching), if it is to reduce the power loss and electromagnetic interference of high-frequency switching power converter switching. 4. [Implementation] For the detailed description and technical content of this creation, I will now explain it with the diagrams as follows: ^ 1 2 Refer to "Figure 4", which is a schematic diagram of the step-down converter circuit architecture of this creation. The creative system is a soft switching control circuit, which is an application of the general Buck Converter circuit architecture. The buck converter H circuit includes:-input power Vin,-connected to input power vin ^ Extreme active switch si, one connected to the above active switch S1 and connected to the input power, vin is a secondary switch S2, one is connected to the output valley C of the above secondary switch 82, one is connected to the secondary switch S2 and the output capacitor c Between the inductors, a load β is connected in parallel to output a voltage (.) It is characterized in that the active switch S1 includes: a metal oxide = body ⑽'M1, the metal oxide semiconductor field effect transistor two =! The positive pole of the input power source Vin is connected, the source pole ⑻ is connected to the secondary switch S2, and the gate (G) terminal thereof is connected to the main control signal "31. A diode IH, the positive pole of the two pole system is combined with the above metal oxygen

M241877 V. Creative Instructions (5) One ---, the source (S) of the conductor field effect transistor M1, the negative terminal is coupled to the drain (D) of the metal oxide semiconductor field effect transistor M1. A parasitic capacitor C1 has two ends, one end of which is connected to the positive electrode of the above-mentioned polar body D1, and the other end of which is connected to the negative electrode of the diode D1i. The secondary switch S2 includes: a metal oxide semiconductor field effect transistor M2, the drain (d) of the metal oxide semiconductor field effect transistor, and the source of the metal oxide semiconductor field effect transistor core of the active switch S1 ( Phantom phase connection, the source (S) is connected to the negative pole of the input power Vin, and its gate (G) is connected to the control signal Vgs2.

A diode D2, the positive pole of the diode D2 is coupled to the metal oxygen dagger, the source (S) of the conductor field effect transistor M2, and the negative terminal is coupled to the drain of the metal oxide semiconductor field effect transistor M2. (1)); a parasitic capacitor C2, which has two ends, one end of which is connected to the anode of diode D2 and the other end of which is connected to the anode of diode D2. For example, the active switch S1 and the secondary switch (S2) have characteristics. For example, the inductor L1 can be operated in a discontinuous conduction mode (^: dUCtl Mn) to make the active switch S1 and the permanent switch S2 conductive. When the voltage drop across the two ends is zero, zero voltage switching (^ 0 Voltage Switching) is reached.

The operation principle of the step-down converter circuit made by -ntf is as follows: Refer to the converter circuit structure shown in "Figure 4" and "Figure 9". The picture is shown by Fenshibian 丨 from &gt; &amp; π ^ slope Kailu Qianli si # + ^ ~ The picture and the control signal and inductance of this creation can be <: think picture. The primary control signal EVgsl and the secondary control signal vgs2 are divided into four stages, and the circuit operations for the four stages are explained in sequence.

Page 9 M241877 V. Creative Instructions (6) Bottom: P &quot; 肖 ί 奴: 10 · Store energy for inductor L1. At this stage, the active switch S! Is on (0N), and the secondary switch "is off (0ff). Its current path on the circuit is the input power source Vi η-the drain of the metal oxide semiconductor field effect transistor M1. (D) —Source of metal oxide semiconductor field effect transistor (S) —Inductor L1—Output capacitor c, load R, at this time, the current (/ L1) of the inductor [丨 rises, and energy is transferred to the load R, and at the same time, Inductor u stores energy. The second stage is 120. The current of the inductor L1 (IL1) discharges the parasitic capacitor C2 in the secondary switch. At this stage, both the active switch S1 and the secondary switch are “OFF”, and the current (11 ^) of the inductor u discharges the parasitic capacitance C2 in the secondary switch. After the discharge is completed, the diode D2 in the secondary switch 32 is discharged. Continuity. The action path of its current on the circuit is: inductor Li-output capacitor c, load r-source (s) of metal oxide semiconductor field effect transistor M2-metal oxide semiconductor field effect transistor ^ 12 drain). The second stage 130 · The energy transfer stage of the inductor L1. At this stage, the active switch S1 is OFF, and the secondary switch S2 is ON. The path of its current on the circuit is: inductor L1-output capacitor c, load r. Source (S) of the metal oxide semiconductor field effect transistor M2 ~ &gt; Drain (D) of the metal oxide semiconductor field effect transistor M2. Because the voltage drop of the secondary switch S2 is lower than the conventionally used flywheel diode D, the conduction loss can also be reduced. When the inductor energy is released, the current path of the circuit is: output capacitor C, load R—inductor L1—drain (D) of metal oxide semiconductor field effect transistor M2—> metal oxide semiconductor field effect transistor In the source (S) of M2, the wheel-out capacitor C stores energy in the opposite direction to the inductor L1. Page 10 M241877 V. Creative Instructions (7) The fourth stage 140: The current of the inductor L1 (IL1) discharges the parasitic capacitance D1. At this stage, the active switch S1 and the secondary switch are in the "off-off (0FF) state" current (IL1) of the inductor L1 to discharge the parasitic capacitance C1 of the active switch S1, and the diode of the active switch S1 will be discharged after the discharge is completed!)〗 On (ON). Its current path on the circuit is: input to output capacitor c, load R — inductance — source (s) of metal oxide semiconductor field effect transistor M1 — metal oxide semiconductor field effect transistor M1 Drain (D) —input power v 丨 n.

☆ If the main control signal Vgsl and the secondary control signal Vgs2 of each cycle are adopted, a complementary control signal switch drives the active switch S1 and the secondary switch (S2), and the active switch s1 and the secondary switch (S2) are both dual Directional characteristics. If the inductor L1 can be operated in Discontinuus Conduction Mode, the voltage drop between the two ends of the active switch S1 and the secondary switch will be zero to achieve zero voltage switching (Zer〇v 〇ltage Switching).

Another application of this creation is the application of the boost converter (Boost Converter) circuit architecture. Please refer to "Figure 5", which is a schematic diagram of the boost converter circuit architecture of this creation: the boost The converter circuit includes an input power Vin, an inductor L1 connected to the positive terminal of the input power Vin, an active switch §1 connected to the inductor L1 and connected in parallel with the input power Vin, and an output capacitor connected in parallel to the active switch S1 C, a secondary switch S2 connected between the active switch si and the output capacitor c, and a load R ′ is connected in parallel as a whole to output a voltage (vout). It is characterized in that the active switch S1 comprises: a metal oxide semiconductor = field effect transistor M; the drain of the metal oxide semiconductor field effect transistor is connected to the inductor L1, and the source (s) is connected to the input power source; Vin negative connection

M241877 V. Creation instructions (8) Connect to j gate (G) to terminate the main control signal ^ !. One pole body D1, the Ding Shanghua semiconductor field effect transistor ":: two positive 'terminals are lightly connected to the above metal oxide semiconductor field effect transistor two =) pole :, pole body = = capacitor C1 has two ends 'One end is connected to the above-mentioned two-diode etch, and it is also known to be connected to the negative electrode of diode D1. M2, ί 2 『化 2: 匕:-metal oxide semiconductor field-effect transistor? The source of crystal M2 and the above main rag, &gt; The semiconductor (effect transistor M2) has the drain (])) phase, // the drain (D) is connected to the wheel-out capacitor c, and the control signal Vgs2 is loved. The gate (G) is terminated with a second pole The body D2, the diode j) 2 is positive;) ¾ The source of her Takita humanized semiconductor field-effect transistor M2 is inserted into the drain of the core of the metal oxide semiconductor field-effect transistor described above. The gold parasitic capacitor has two ends, a + pole body D2, and a positive pole: the other end is connected to the negative pole of the diode D2. If the above two ends are connected, the active switch S1 and the secondary switch 82 are both provided. The double Λ 5 disc is that the inductor U can be operated in the discontinuous conduction mode to make the active gate] S1 and the secondary switch S2 turn on at both ends to zero, reaching zero electricity.]: Switch: This creation The operation principle of the circuit for the boost converter is as follows. Please refer to the schematic diagram of the boost converter circuit structure shown in "Figure 5" and "Figure 9" and the current waveform diagram of the control $ 二 == in this creation. The main control signal Vgsl and the secondary control page 12 M241877 V. Creation instructions (9) The cycle is the same as the previous embodiment, and it can also be divided into stages. The circuit operation is explained in order as follows .... Now for the four &amp; paragraph 110 ... Energy storage stage for inductor L1. At this stage, switch su is turned on ⑽) 'and next opening age 2 is cut off. "Segment = The diameter of the moving material on the circuit is: input power Vin-inductance u-gold semiconductor semiconductor field effect transistor M1 Drain (D) — Source (S) of the metal oxide semiconductor field effect transistor M1 'At this time, the current (IL1) of the inductor L1 rises, and energy is stored in the inductor L1. In the second phase 120, the current (IU) of the inductor L1 discharges the parasitic valley C 2 in the secondary switch 82. At this stage, both the active switch $ 1 and the secondary switch $ 2 are in the cut-off f (OFF) state, and the inductor uses the current (IL1) to discharge the secondary switch "the parasitic valley C2 of the secondary switch." The body D2 is turned on. The action path flowing on the circuit is: input power source vin—inductance L1—source (S) of metal oxide semiconductor field effect transistor M2—drain (D) of metal oxide semiconductor field effect transistor M2 — Output capacitance c, load R. The third stage 130 ·· Inductor L1 energy transfer stage. In this stage, the active switch S1 is turned off (0FF), and the secondary switch S2 is turned on (ON). Its current operates on the circuit. The path is: input power Vin-inductance L1-source (S) of metal oxide semiconductor field effect transistor M2-pole (D) of metal oxide semiconductor field effect transistor M2 output capacitor c, load R. Because the secondary switch S2 The voltage drop of the ON is lower than the flywheel diode d used in the prior art, and the conduction loss can be reduced. When the inductor energy is released, the current path of the current in the circuit is: output capacitor C, load r — Drain of metal oxide semiconductor field effect transistor M2. ) —Source of Metal Oxide Semiconductor Field Effect Transistor M2 (S)

Page 13 M241877 V. Creation Instructions (Luo) — Inductance L1 — Input power source Vi η, wheel output capacitor c stores energy in the opposite direction to inductor L1 0 Fourth stage 140: The current (ili) of inductor L1 discharges parasitic capacitor D1 stage. At this stage, the active switch S1 and the secondary switch S2 are in the cut-off (0FF) state. The current (IL1) of the inductor L1 discharges the parasitic capacitance ci of the active switch si. After the discharge is completed, the diode of the active switch S1 is turned on (0N ). The action path of the current on the circuit is: the inductive input power source Vin-the source (s) of the metal oxide semiconductor field transistor M1-the drain (D) of the metal oxide semiconductor field effect transistor M1. ^ If it is the primary control signal Vgsl and the secondary control signal Vgs2 of each cycle, a complementary control signal switch is used to drive the active switch s 丨 and the secondary switch S2. By virtue of the primary, the switch S1 and the secondary switch S2 have bidirectional characteristics. For example, if the inductor 11 can be operated in a discontinuous conduction mode, when the active switch S1 and the secondary switch S2 are turned on, the voltage drop across the two ends is zero, and zero voltage switching is achieved.

(The real name) is for the application of the buck-boost: nverter circuit architecture. Please refer to [Figure 6], which is the schematic diagram of the buck-boost converter circuit architecture: The voltage conversion agency includes: an input power source Vin, one connected to the positive terminal of the input power source ^ η ^ xi ^, S1, one connected to the above active switch S1 and parallel to the input power source Vin &amp; L1, one connected in parallel to the The output capacitor C of the inductor L1 is connected in series to the secondary switch S2 between the inductor L1 and the output capacitor c, and a load R is connected in parallel as a whole to output a voltage (vout). Xu 1 said: Hair: The active switch $ 1 contains: a metal oxide half-board and two solar heliostats M1 ’the name of the metal oxide semiconductor field effect transistor M1

Page 14 M241877 V. Creation instructions (11) (D) Connected to the positive pole of the input power source vin, the source (s) is connected to one end of the inductor L1 ', and its gate (G) is connected to the main control signal Vgsl. One pole D1, the positive pole of the diode D1 is coupled to the source (s) of the metal oxide half-V body% effect transistor M1, and the negative terminal is connected to the drain of the metal oxide semiconductor field effect transistor M1. Pole (d). Parasitic valley C1 'This parasitic capacitor ci has two ends, one end is connected to the anode of the above-mentioned diode D1, and the other end is connected to the anode of the diode. The secondary switch S2 includes a source of a metal oxide semiconductor field effect transistor M2, the drain (D) of the metal oxide semiconductor field effect transistor M2, and the source of the metal oxide semiconductor field effect transistor of the active switch ^ si ... The pole (s) and the inductor η a = H are connected together, the source (S) is connected to the-terminal of the output capacitor c, and the gate (G) is connected to the secondary control signal Vgs2. 811 diode D2, the positive pole of which is coupled to the source ⑻ of the upper field effect transistor M2, and the negative terminal is turned to the drain of the metal oxide semiconductor field effect transistor M2 (D ). A parasitic capacitor C2. The parasitic capacitor C2 has the positive pole of the pole D2, and the other end is connected to the negative pole of the two poles. It can be used for discontinuous conduction. The special creation of 4Z is applied to the switch of lifting dust. Bottom: For the explanation of the circuit operation principle of ^, please refer to "Figure 6" and "篦 q step-up and step-down converter circuit architecture display sound f". It is the structure of this creation and the control signal and power of this creation. Page 15 M241877 V. Creative Instructions (12) Schematic diagram of inductive current waveform. The primary control signal Vgsl and the secondary control signal Vgs2 are the same as in the previous two embodiments. Each cycle can be divided into four phases. The circuit operations for the four phases are described in order as follows: Phase 1 0: Store energy for inductor L1. . At this stage, the active switch S1 is ON, and the secondary switch S2 is OFF. The action path of the current on the circuit is: input power V i η-the drain (D) of the metal oxide semiconductor field effect transistor M1-the source (S) of the metal oxide semiconductor field effect transistor M1-the inductor L1, at this time The current (IL1) of the inductor L1 rises, and energy is stored in the inductor L1. The second stage 120: the current (IL1) of the inductor L1 discharges the parasitic capacitor C2 in the secondary switch S2. At this stage, both the active switch S1 and the secondary switch §2 are in the OFF state, and the current (ili) of the inductor li discharges the parasitic capacitance C2 of the secondary switch §2. After the discharge is completed, the diode D2 in the secondary switch 82 is discharged. Continuity. The action path of the current on the circuit is as follows: electric fairy-output capacitance c, negative cut ^ source (s) of metal oxide semiconductor field effect transistor M2-drain (D) of metal oxide field effect transistor M2. · The third stage 130: the energy transfer stage of the inductor L1. This threshold Sl is cut-off (0FF), and the secondary switches s2A¾, gfl·lλί, 幵 oxidize this lotus m Φ Γ and the output capacitor c, load R—metal oxide high-conductance% efficiency transistor… the source of the transistor The pole of M2 (D). Because JJ is an emulsified conductor field

The power loss during turn-on can also be reduced / The known flywheel diode D is formed, and the current of the circuit in the circuit is: the release of the inductor energy is only the output capacitor c, the load R ~ electricity M241877 V. Creation instructions (13) Inductance L1-Drain of metal oxide semiconductor field effect transistor M2 (]))-Source (S) of metal oxide semiconductor field effect transistor M2, output capacitance (reverse energy storage for inductor L1. Four stages 140: The current (IL1) of the inductor L1 discharges the parasitic capacitance D1. At this stage, the active switch S1 and the secondary switch S2 are in the cut-off (0FF) state, and the current (I l 1) of the inductor L1 is compared to the active switch s 1 The parasitic capacitance c 丨 is discharged, and after the discharge is completed, the diode of the active MS1 is turned on!) And turned on (ON). The path of the bean current in the two iifs is: inductor L1—metal oxide semiconductor field effect transistor &amp; thunder ,, = s) —metal oxide semiconductor field effect transistor drain (1 &gt;) — Han input power supply V 1 n. The main control signal Vgsl and the secondary control signal vss2 of one cycle of the instrument are two. The dream signal is active ^ The system signal switch drives the active switch S1 and the secondary switch ", when the conduction = the conduction mode makes the active open, and the secondary switch The terminal voltage drop is zero, reaching zero voltage switching. F. A new type of soft switching control circuit with dry operation can be applied to the main control signal vgsl and boost converter and buck converter at the same time. With active ^^ control signal Vgs2 can be divided into four steps S2 per cycle level, only _ 丄 and the secondary switch Vgs2 which replaces the conventional flywheel diode D input secondary switch $ = control signal Vgsl reverse secondary control signal The conduction mode, that is, the current of the inductor L1 (IL1) can be operated at discontinuous s switching and reduced flying. Up to 2 effects reduce the power when the main switch in the conventional converter shows the purpose of this creation—Λ: 通 ⑽) The losses are fully visible, and the effectiveness of the implementation is progressive and the industrial

M241877 V. Creation description (14) In the soft switching control circuit of this creation, the metal oxide semiconductor field effect transistor M1 of the active switch s 丨 and the metal oxide semiconductor field 2 transistor M2 of the secondary switch S2 can be used. Replaced by bipolar transistors (BJT) β1 and β2 (as shown in "Figure 7"), the corresponding positions of the substitution are the source (s) and gate ( G) Corresponds to the drain (D), corresponding to the emitter (E), base (β), and collector (C) of the bipolar transistors B1 and B2. Field effect of the metal oxide semiconductor of the active switch s 1 The transistor M1 and the metal oxide semiconductor field-effect transistor of the secondary switch S2 ... can also be replaced by insulated gate bipolar transistors (IGBTs) T1 and T2 (as shown in "Figure 8"). The corresponding position of the replacement is metal The oxide semiconductor field effect transistor M1, the source (S), the gate (G) and the drain (d) thereof correspond to the emitters (E) and the gates (E) of the insulated gate bipolar transistors T1 and T2. G) and collector (C). However, the above are only the preferred embodiments of this creation. When the scope of implementation of this creation cannot be limited, that is, all equal changes and modifications made in accordance with the scope of the application's profit should still belong to this creation. Within the scope of the patent. &lt;

M241877 Brief description of the diagram V. Brief description of the 1r diagram 1st diagram 2nd diagram 3rd diagram 4th diagram 5th diagram 6th diagram 7th diagram 8th diagram 9th diagram diagram Symbol S: Main switch L : Energy storage inductor D: Flywheel diode V1 n: Input power source si: Active switch S2: Secondary switch C: Output capacitor U: Inductor R: Load converter known buck converter converter system known boost converter circuit ;: The figure shows the annual structure of the conventional buck-boost converter circuit. The Γ f diagram is the schematic diagram of the circuit structure of this creation μ. 4. The schematic diagram of the boost converter circuit architecture r, the schematic diagram of the buck-boost converter circuit architecture is In the creation, the metal oxide semiconductor field-effect transistor (MOSFET) is replaced with a bipolar transistor (BJT). This is a schematic diagram of the metal oxide semiconductor field-effect transistor (MOSFET) replaced with an insulated gate bipolar transistor (IGBT). Schematic diagram of the control signal and inductor current waveform of this creation❿

Page 19 M241877 Schematic description Ml, M2 D1, D2 Cl &gt; C2 Metal Oxide Semiconductor Field Effect Transistor Diode Parasitic Capacitance Vgsl: Main control signal V g s 2: Secondary control signal ❿

Page 20

Claims (1)

M241877 An application of a soft switching control circuit (Buck Converter) circuit architecture, the step-down converter circuit has been included. One input power source (Vln), one connected to the positive terminal of the input power source (vin) = moving switch (si) '- The secondary switch (S2) connected to the active switch (S1) and parallel to the input (1), one connected to the output valley (C) of the secondary switch (s2), and connected to the secondary switch (S2) and output The inductance (L1) between the capacitors (c) is further connected in parallel with a load (R) as a whole to output a voltage (Vout.); It is characterized in that the active switch (S1) includes a metal oxide semiconductor field effect Transistor (MOSFET) (Ml), the drain (D) of the metal oxide semiconductor field effect transistor (Ml) is connected to the positive pole of the input power source (Vin), and the source (8) is connected to the secondary switch (S2) The gate electrode ((^ is terminated to the main control signal (Vgsl); a pole body (D1), the anode end face of the diode body (D1) is connected to the source of the above-mentioned metal oxide semiconductor field effect transistor (M1)) Electrode (s), the negative terminal of which is coupled to the drain (D) of the metal oxide semiconductor field effect transistor (Ml); Capacitor (C1), the parasitic capacitor (C1) has two ends, one end is connected to the anode of the above-mentioned diode (D1), and the other end is connected to the anode of the diode (D1); the secondary switch (S2) includes: Metal oxide semiconductor field effect transistor (M2), the drain (0) of the metal oxide semiconductor field effect transistor (secret 2) and the source of the metal oxide semiconductor field effect transistor (M2) of the above active switch (si) (S), the source (S) is connected to the negative pole of the input power source (Vi η), and the gate (G) is connected to the secondary control signal M241877 6. Scope of patent application (Vgs2) produces a diode (D2), the positive pole of the diode (D2) is coupled to the source (s) of the metal oxide semiconductor field effect transistor (M2), the negative terminal The parasitic capacitor (C2) has two ends and one end is connected to the positive electrode of the above-mentioned diode (D2). The other end is connected to the negative electrode of the diode (D2). With the active switch (S1) and the secondary switch (S2) both having bidirectional characteristics, if the inductor (L1) can be operated in the discontinuous conduction mode (Discontinuous Conduction Mode) ), When the active switch (S1) and the -man switch (S2) are turned on, the voltage drop at both ends is zero, and zero voltage switching is achieved (Ze Factory 0 Voltage Switching). 2. The soft switching control circuit according to item 1 of the scope of patent application, wherein the primary control signal (Vgsl) and the secondary control signal (vgs2) are opposite to each other. 3. The soft switching control circuit as described in item 1 of the scope of patent application, wherein the metal oxide semiconductor field effect transistor (M1) of the active switch (si) and the metal oxide semiconductor field effect transistor of the secondary switch (S2) (M2) may be replaced by a bipolar transistor (BJT) (B1, B2), and the corresponding corresponding positions are the source (s) and gate (G) of the metal oxide semiconductor field effect transistor (men, M2). The drain (D) corresponds to the emitter (E), base (B) and collector (c) of the bipolar transistor (β1, B2). 4. The soft switching control circuit as described in item 1 of the scope of patent application, wherein the metal oxide semiconductor field effect transistor (MJ) of the active switch (s1) and the metal oxide semiconductor field effect transistor of the secondary switch (S2) The crystal (M2) can be formed by M241877 VI. Patent application: Edge gate bipolar transistor (IGBT) (T1, T2) replacement, the corresponding position is the source (S), gate of metal oxide semiconductor field effect transistor (M1, M2). (G) and drain (D) correspond to the emitter (E), gate (G), and collector (c) of the insulated gate bipolar transistor (IGBT) (Ti, T2). 5 kinds of soft switching control circuits are applied to the general boost converter (Boost Converter) t-channel architecture. The boost converter circuit includes an input power source (Vin) and one connected to the input power source (Vin ) The positive inductance (L1), an active switch (S1) connected to the inductor (L1) and connected in parallel with the input power source (Vin), and an output valley (c) connected in parallel to the active switch (si), A secondary switch (S2) connected between the active switch (s 丨) and the output capacitor (c) is connected as a whole in parallel with a load (r) to output a voltage (Vout); It is characterized by: The switch (S1) comprises: a metal oxide semiconductor field effect transistor (M1), the drain (D) of the metal oxide semiconductor field effect transistor (Ml) is connected to the inductor (L1), and the source (s) and The negative pole of the input power source (Vi η) is connected, and its gate electrode (()) is terminated with the main horn (Vgsl); a diode (D1), the positive pole of the diode (D1) is coupled to the upper oxidation The source (S) of the semiconductor field effect transistor (Ml), the negative terminal of which is coupled to the above metal oxide semiconductor field effect transistor Drain (D) of (M1); ° A parasitic capacitor (C1), which has two ends, '_ is connected to the positive electrode of the diode (D1), and the other end is connected to the diode (D1 ) Check that the switch (S2) contains: Stomach # 'M241877 A metal oxide semiconductor field effect transistor (M2), the metal oxide semiconductor, the source (S) of the field effect transistor (M2), and the metal oxide semiconductor field effect transistor of the active switch (S1) (2) The drain (])) is connected, the drain is connected to the output capacitor (C), and the gate (()) is terminated with the secondary control signal (Vgs2); a diode (D2), the diode The positive terminal of the body (D2) is coupled to the metal oxide half, the source (s) of the body field effect transistor (M2), and the negative terminal is coupled to the drain (d) of the metal oxide semiconductor field effect transistor (M 2). ); A parasitic capacitor (C2), the parasitic capacitor (C2) has two ends, one end is connected to the anode of the diode (D2), and the other end is connected to the anode of the diode (D2); S1) and secondary switch (32) both have bidirectional characteristics. If the inductor (L1) can be operated in discontinuous conduction mode, the voltage drop across the two ends of the active and secondary switch (S2) will be zero to achieve zero voltage cut. ^ (. 6. The soft switching control circuit as described in item 5 of the scope of patent application, wherein the primary control signal Vgsl and the secondary control signal VgS 2 is opposite to each other. 7. The soft switching control circuit described in item 5 of the scope of patent application, wherein the metal oxide semiconductor field effect transistor (M1) of the active switch (si) and the metal of the secondary switch (S2) The oxide semiconductor field effect transistor (M2) can be replaced by a bipolar transistor (BJT) (B1, B2), and the corresponding position is the source (s) of the metal oxide semiconductor field effect transistor (M1, M2). The gate (G) and the drain (D) correspond to the emitter (E), base (B), and collector (C) of the bipolar transistors (B1, b2). The soft switching control circuit according to item 5, wherein the metal oxide semiconductor field effect transistor (M1) of the active switch (si) Page 24 M241877 VI. Patent application scope and the metal oxide semiconductor field effect transistor (M2) of the secondary switch (S2) can be replaced by an insulated gate bipolar transistor (IGBT) (TI, T2), and the corresponding corresponding position of the replacement It is the source (S), gate (G) and drain (D) of the metal oxide semiconductor field effect transistor (Ml, M2), corresponding to the insulating gate bipolar transistor (IGBT) (ΤΙ, T2) Emitter (E), gate (G) and collector (C). 9. A soft switching control circuit, which is an application to the general buck-boost converter circuit architecture. The buck-boost converter circuit includes an input power source (V i η), one connected to the input An active switch (si) at the positive terminal of the power source (Vin), an inductor (L1) connected to the active switch (si) and connected in parallel with the input power source (Vin), and an output capacitor (C) connected in parallel to the above-mentioned inductor (L1) ), —— The secondary switch (S2) connected between the inductor (L1) and the output capacitor (C), and a load (R) is connected in parallel as a whole to output a voltage (Vout); 'It is characterized by: the active The switch (S1) comprises: a metal oxide semiconductor field effect transistor (Ml), the drain (D) of the metal oxide semiconductor field effect transistor (Ml) is connected to the positive electrode of the input power source (Vin), and the source ( S) is connected to one end of the inductor (L1), and the gate (G) is connected to the signal (Vgsl); a diode (D1), the positive pole of the diode (D1) is coupled to the metal oxide semiconductor field The source (S) of the effect transistor (Ml) and the negative terminal are lighter than the above metal oxide semiconductor Drain (D) of the effect transistor (Ml); ° A parasitic capacitor (C1), which has two ends, one end of which is connected to the positive electrode of the aforementioned pole body (D1), and the other end is connected to the diode body ( D1) negative pole; heart one Page 25 M241877 The secondary switch (S2) includes: a metal oxide semiconductor field effect transistor (M2), a drain (D) of the metal oxide semiconductor field effect transistor (M2), and the metal oxide semiconductor field of the active switch (S1). The source (S) of the effect transistor (M2) is coupled to one end of the inductor (li), the source (S) is connected to one end of the output capacitor (C), and the idler (G) is connected to the secondary control signal (VgS2); /, a diode (D2), the positive pole of the diode (D2) is coupled to the source (S) of the metal oxide semiconductor field effect transistor (M2), the negative terminal is consumed by The drain (d) of the metal oxide semiconductor field effect transistor (M 2); a parasitic capacitor (C2), which has two ends, one end of which is connected to the anode of the diode (D2), and the other end Connected to the negative pole of the diode (D2); f The active switch (S1) and the secondary switch (S2) have bidirectional characteristics. If so, the inductor (L1) can be operated in discontinuous conduction mode to make the active switch (S1 ) When the secondary switch (S2) is turned on, the voltage drop across the two ends is zero, and zero voltage switching is reached. 10. The soft switching control circuit according to item 9 of the scope of the patent application, wherein the primary control signal (Vgsi) and the secondary control signal (Vgs2) are opposite to each other. ^ 11. The soft switching control circuit described in item 9 of the scope of patent application 'wherein' the metal oxide semiconductor field effect transistor (Ml) of the active switch (S1) and the metal oxide semiconductor field effect transistor of the secondary switch (82) The crystal (M2) may be replaced by a bipolar transistor B1, β2), and the corresponding positions of the substitution are the source (s), idler (G), and drain of the metal oxide semiconductor field effect transistor (M1, M). The pole (D) corresponds to the emitter (E), base (B) and collector (c) of the bipolar transistor (Bi, b2). Page 26 M241877 VI. Application for patent scope 12 The soft switching control circuit as described in item 9 of the patent application scope / ^ 其 Ϊ / Metal oxide semiconductor field effect transistor secondary switch (S2) of the active switch (S1) The metal oxide semiconductor field effect transistor (1 ^ 2) can be replaced by an insulated gate bipolar transistor (IGBT) (TI, T2), and the corresponding corresponding position is a metal oxide semiconductor field effect transistor (M1, M2) The source (S), gate (g), and drain (d) correspond to the emitter (E), gate (G), and collector of the insulated gate bipolar transistor (IGBT) (ΤΙ, Τ2). Pole (C).