TWM241433U - Metallic organic chemical vapor deposition device - Google Patents

Description

M241433

I. [Technical field of creation] This creation is about a metal organic chemical vapor deposition device, especially a type and order in which various gases can enter the reaction chamber, so as to sequentially deposit on the wafer. A metal-organic chemical vapor deposition device with a plurality of metal oxide layers is required. 2. [Previous Technology]

Generally, when manufacturing a white LED, a plurality of metal oxide layers are usually grown on a wafer, and the wafer growth process usually requires a metal organic chemical vapor deposition device (MOCVD). In the production of white light LEI), it is usually necessary to sequentially send gas such as oxygen (〇2), argon (Argon) and another metal such as but not limited to zinc (Zn) or magnesium (Mg) into the metal organic The reaction chamber of the chemical vapor deposition apparatus is mixed so that the oxygen (02), argon (Aragon), and zinc (Zn) or magnesium (Mg) gases can be used to deposit a desired oxide layer on the wafer. However, the gases such as oxygen (〇2), argon (Argon), zinc (Zn), or spectrometer (Mg) cannot be mixed with each other before being sent to the reaction chamber for mixing, so as to avoid being unable to be mixed with the wafer after early mixing A desired oxide layer is deposited on it. Therefore, how to make oxygen (〇2), argon (Argon) and zinc (Zn) or magnesium (Mg) and other gases can enter the reaction chamber separately, which is an important factor in the design of metal organic chemical vapor deposition. Subject.例如 ^ For example, Chinese Patent Publication No. 455633 "Metal-Organic Chemical Vapor Phase / Electrodeposition and Deposition Method" provides a metal-organic chemical vapor-phase 'Electrodeposition and deposition method, which can be used to form high dielectric films The metal has a pre-deposition device, including ... a Yuan Guangguan filled with reactants dissolved in a solvent-a liquid microcylinder for transporting dissolved reactants, and-for evaporation

M241433

Evaporate the reaction from the micro-cylinder evaporation reaction chemical reactor to give an extra amount of re-condensation, send the line, oxygen (〇2) the reaction chamber three, [the reactor to dissolve the reactants sent in, and one for the sink, has been The reactor mounted on the semiconductor substrate therein should not be supplied to the reactor by a carrier gas. The metal accumulation device is further characterized by including a solvent supply device for supplying the solvent to the evaporator. In order to prevent reactants in the evaporator and prevent recondensation of the reactants from blocking the circulation between the evaporator and the reactor, the content of the description of the case does not explain how to make argon (Argon) and zinc (Zn) or Magnesium (Mg) and other gases enter alone without mixing early, which is a disadvantage of the United States. Content

Therefore, 'in order to solve the shortcomings of the conventional metal organic chemical vapor deposition device', this creation provides a metal organic chemical vapor deposition device which can control the oxygen (〇2), argon (Argon), and zinc (Zn). ) Or magnesium (Mg) and other gases enter the reaction chamber alone without early mixing, and the type and sequence of various gases entering the reaction chamber can be adjusted to sequentially deposit the required plurality of metals on the wafer Metal organic chemical vapor deposition device for oxide layer.

The metal-organic chemical vapor deposition device of this creation includes: a metal-organic chemical vapor deposition device, which is used to deposit a plurality of metal oxide layers required on a wafer, and includes: a base having a bottom plate Accommodating space, a plurality of support plates, a sliding plate, a plurality of lifting guides and an upper plate, wherein 'the sliding plate is placed on the supporting plates, and the supporting plates are respectively parallel to the bottom plate, and the lifting The guide bar is perpendicular to the upper plate to support the upper plate, and can be locked on the slide plate by a slider to support the reaction described below.

Page 6 M241433 V. Creation instructions (3) to the gas control device; the lifting device is placed in the accommodating space for lifting a wafer; the heater is placed on the lifting device for To heat the wafer to a specific temperature; the reaction chamber is placed between the plurality of lifts ^ ^ to provide the wafer and a plurality of gases for metal organic vapor deposition; and gas control The device is arranged at the reaction to the top, and can be tightly connected to the reaction chamber. The device includes a first air inlet plate, a first air inlet plate, a third air inlet plate, and a third air inlet plate, and the first air inlet The top of the disc is covered with a cap, so that the air disc cap is in a tight state, wherein the first intake disc, the second intake disc, and the third intake disc each have a plurality of air intakes of varying amounts.

The holes γ are provided with air inlet grooves on each of the four sides. When the wafer enters the reaction chamber through the liter, the inlet and the order of the gas control device can be adjusted by adjusting the order and order of the gas. The required plurality of metal oxide layers are deposited on the wafer. Fourth, [implementation] Please refer to the group of the device, the phase deposition device, the reaction chamber 40, among which a plurality of branches, among which the system is perpendicular to each other so as to support, as shown in Fig. 1 (a), and the schematic diagram is shown. As shown in the figure, it includes: a base; and a gas control 'the base 10 enters a floor 1 3, the slide 1 4 the slide 14 is placed on the bottom plate 11 in parallel, supports the upper plate 16, and supports the reaction chamber 4 0 and τ metal organic chemical vapor deposition in this case: As shown in FIG. 1, the metal organic chemical gas seat in this case 10; the lifting device 20; the heater 30 device 50 are combined.

The steps include a bottom plate 11, an accommodation space 12, a plurality of lifting guides 5 and an upper plate 16 on the support plates 13, and the support plates 1 and the lifting guides 15 and the upper plate j can be The slider 1 7 is locked to the slide 1 and the gas control device 50. The lifting equipment

M241433 Creative Instructions (4) 20, placed in the accommodating space 丨 2 for lifting a wafer (not shown), such as but not limited to a pneumatic cylinder. When in use, you can adjust the The lifting device 20 allows the wafer to enter the reaction chamber 40 to perform a deposition process.

The heating is 30, which has a heating rod 31 and a platform 32, wherein the heating rod 31 is placed on the lifting device 20 for heating the wafer to a specific temperature, such as but not limited to 6 degrees Celsius 〇〇t, so that the wafer is easy to react with the gas in the reaction chamber 40, such as, but not limited to, oxygen (〇2), argon (Argon) and gas (Zn) or magnesium (Mg) and other gases, and The platform 32 is used to carry the wafer 60. The reaction chamber 40 is arranged between the plurality of lifting guide rods 15 and is used to provide the wafer with oxygen (A), argon (Arg⑽), and zinc (Zn) or magnesium (Mg) for metal Organic chemical vapor deposition sites are preferably made of quartz tube material for the purpose of thermal insulation and transparency. In addition, two sides of the reaction chamber 40 are respectively provided with a housing cover 41, and one side of the housing cover 41 is provided with a water inlet hole 411, a spiral cooling groove 412, and an outlet hole 4 1 3 in order to the reaction chamber. 40 performs spiral circulation cooling. In use, a cooling liquid (such as, but not limited to, water) can be injected into the helical expansion cooling tank 412 through the water inlet hole 411 and output through the water outlet hole 413, so that the reaction / chamber 4 〇 <; Cool down. A suction hole extension 414 is provided below the other side of the housing cover 41, so that the reaction chamber 40 can be pumped straight through the suction hole 414 to ensure oxygen, argon, zinc or magnesium gas, etc. It will not communicate with the outside world. Figure 1 (b) shows a schematic diagram of the heater 30 entering the reaction chamber 40 after the lifting device 20 of this case rises. As shown in Fig. 1 (b), the lifting device 20 can be placed on the side platform of the top surface of the tea table 20 after the lifting step 20

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32 and the wafer 60 are sent into the reaction chamber 40 so that the wafer 60 placed on the top surface of the heater 30 can react with oxygen, argon, zinc or zinc in the reaction chamber 40. The gas control device 50 of the Chinese version is the focus of this creation. It is placed on the top of the reaction chamber 40 and can be closely fitted to the reaction chamber 40. It includes a first air inlet plate 51, a first An air intake disk cover 52, a second air intake disk 53, and a third air intake disk 55. The first air intake disk 51, the first air intake disk 53, the second air intake disk 53, and the third air intake disk. 55 lines were in a close state.

According to Fig. 2 (a) and (b), they show the top view and cross-sectional schematic diagrams of the first air intake tray in this case, respectively. As shown in FIGS. 2 (a) and 2 (b), the circular ventilation zone 511 on the first air intake plate 51 in the present case has a plurality of first air intake holes 5 1 2 and a first air hole is provided on each of its four sides. A horizontal hole 5 丨 3 and a first vertical hole 5 1 4 ', and each first air inlet hole 5 丨 2 is provided with a guide groove 2 1 °, wherein the exit height of the first air inlet hole 5 1 2 is Lower than the circular ventilation, the height of 511, so that when the first air inlet disc cover 52 is covered on the first air inlet disc 51, after the gas is injected through the first horizontal hole 51 3, it passes through the first vertical hole 5 1 4 can smoothly enter the plurality of guide grooves 5 1 2 1. Wherein, the arrangement of the first air inlet holes 5 1 2 is formed by arranging the first air inlet holes 5 1 2 at a circumference of the circular ventilation area 5 1 1 and discharging the first air holes 5 at an interval d. The two rows of first air inlet holes 5 1 2 are arranged in this order until the other circumference of the circular ventilation area 5 11. Please refer to Figs. 3 (a) and (b), which respectively show a top view and a cross-sectional schematic diagram of the second air intake plate 53 in this case. As shown in FIGS. 3 (a) and (b), the first air inlet plate 5 3 in this case is provided with second horizontal holes 5 3 4 and a second horizontal hole, respectively.

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The vertical holes 53 5 are provided in the circular ventilation area 531 at the same position as the plurality of first air inlet holes 512 and are provided with a plurality of second air inlet holes 532, and in the circular ventilation area 5 3 1 A plurality of third air inlet holes 533 which are not in communication with the first air inlet hole 512 are installed on the periphery of the circumference, and a guide groove 5331 is provided on the periphery of the air outlet holes of the plurality of third air inlet holes 533 so that the gas can be borrowed. The guide grooves 5331 enter the plurality of third air inlet holes 533. The height of the exit of the second horizontal hole 534 is lower than the height of the circular ventilation area 531, so that when the first air intake disc cover 52 and the first air intake disc 51 are superposed on the second air intake disc 53, After the gas is injected through the second horizontal hole 5 3 4, it can smoothly enter the plurality of guide grooves 5331 through the second vertical hole 5 3 5. Therefore, the total number of the first air inlet hole 532 and the third air inlet hole 533 which is not in communication with the first air inlet hole 512 on the second air inlet plate 53 is greater than that of the first air inlet hole 512.

Please refer to FIGS. 4 (a) and (b), which respectively illustrate a top view and a cross-sectional schematic diagram of the third air intake plate 55 in this case. As shown in FIGS. 4 (a) and (b), the third air inlet plate 55 of the present case is provided with a third horizontal hole 555 and a third vertical hole 5 56 on its four sides, and is divided by its circular ventilation area 551. A plurality of fourth air inlet holes 5 52 are provided at the same positions as the plurality of first air inlet holes 512 and the plurality of second air inlet holes 532, and are installed on the periphery of the circular ventilation area 551. A plurality of fifth air inlets 5 5 3 which are in communication with the plurality of third air inlets 5 3 3, and then between the plurality of fourth air inlets 5 5 2 and the plurality of fourth air inlets 5 5 2 A plurality of sixth air inlet holes 5 54 are provided on the interval d, and a guide groove 5541 is provided outside the air guide hole of the plurality of sixth air inlet holes 554 so that gas can enter through the guide groove 5 5 4 1 The plurality of sixth air inlet holes 5 5 4. The exit height of the third horizontal hole 5 5 5 is lower than the height of the plurality of sixth air holes 5 5 4

M241433 V. Creation description (7) degrees, so that when the first intake disc cover 52, the first intake disc 51 and the second intake disc 53 are superposed on the third intake disc 55, the gas After being implanted through the third horizontal hole 555, it can be smoothly inserted into the plurality of guide grooves 5 5 41 through the third vertical hole 5 56. Please refer to FIG. 5, which illustrates a schematic diagram of the first intake disk cover 52, the first intake disk 51, the second intake disk 53, and the third intake disk 55 when they are overlapped with each other. As shown in the figure, when the first air intake cover 52, the two's two 51, the first air intake 53, and the third air intake 55 are superimposed on each other, a stack of gas, such as, but not limited to, oxygen After entering through the first horizontal hole 5 丨 3, the first brother is the top of the first air inlet plate 51 and is covered by the first air inlet plate cover 52. Because of this < ', because of the gas, it should be located at the same position and overlapped with each other. A plurality of first constructions, 512, a plurality of second air inlets 532, and a plurality of fourth air inlets 55 flow into the reaction chamber 40, and a second gas, such as a directional gas, passes through the second horizontal hole. After 534 entered, because the top was covered by the first --- argon, the second gas will go to the same position and weigh β air disc 51. There are several third air inlets 533 and multiple fifth air inlets 553. = Reintroduced into the reaction chamber 40, and-a third gas, such as but not:? After entering through the third horizontal hole 555, because the upper side is held by zinc or magnesium, the third gas can directly pass through the remaining younger one; enter the cover 554 into the anti-shore chamber 40. Ππ 士 The brother's six-injector 丨 Yanba shoulder reacted to 4U. In this way, the three paths (two holes or towns) entering the reaction chamber 40 and the long squirrel gas and zinc species before entering the reaction chamber 40 are different from each other in order to avoid the second order. Among them, the order of adding the three kinds of gas is "1. The order of the program is the zinc or magnesium and the oxygen, or a = = plant lice first, then the fly 疋 the zinc or magnesium first join the boat _ then you IH1 M241433 V. Creative Instructions (8) The sequence is the rat gas and the oxygen. Among them, the one disclosed in this case is a preferred embodiment. For example, those who have made partial changes or modifications derived from the technical ideas of this case and are familiar with the art. Those who are easy to deduce do not depart from the scope of the patent right of the case. In summary, the case, regardless of the purpose, means and effect, is showing its technical characteristics that are quite different from the conventional ones, and its first creation is practical and practical. It meets the requirements of the new type of patent. We urge your reviewing committee to make a clear observation, and pray that the patent will be granted as soon as possible.

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V. [Simplified description of the drawing] Fig. 1 (a) is a schematic diagram, which depicts the combined schematic diagram of the deposition device; ', the metal-organic chemical vapor phase diagram of the case 1 (b), which shows the rise of the case into the 30 Schematic diagram of the reaction chamber 40; After the installation 20 rises, the heater displays the first progress of the case, the second progress of the case, and the third progress of the case. Figure 2 (a) and (B) is a schematic top view and cross-sectional schematic diagram of air disc 51 (Fig. 3U) and (b) are-schematic top view and cross-sectional schematic diagram of air disc 53 Fig. 4 (a) and (b) are schematic air disc 55 A top view and a schematic cross-sectional view, FIG. 5 is a schematic cross-sectional view showing the exhaust air intake plate 51, the first, the second, the first air inlet cover 52, the first, and the second. Air i53 and the third air intake tray 55 are superimposed on each other. The illustration of the drawing number: Base 10 Support plate 13 Upper plate 1 6 Heater 3 0 Water inlet hole 411 Air exhaust hole 414 Floor plate 11 Slider 14 Slider 17 Reaction chamber 4 0 Spiral Cooling tank 41 2 Second housing cover 42 Receiving space 1 2 Lifting guide rod 1 5 Lifting device 20 First housing cover 41 Outlet hole 4 13 Exhaust hole 4 2 1

Page 13 M241433 Schematic illustration of the gas control device 5 0 The first air inlet plate 5 1 Guide groove 5121 The first air inlet plate cover 52 Circular ventilation area 5 3 1 Guide groove 5 3 3 1 The third air inlet plate 5 5 Fifth air inlet hole 553 Third horizontal hole 5 5 5 Circular ventilation zone 5 11 First horizontal hole 5 13 Second air inlet plate 53 Second air inlet hole 5 3 2 Second horizontal hole 534 Round ventilation zone 5 5 1 Sixth air inlet hole 554 Third vertical hole 5 5 6 First air inlet hole 5 12 First vertical hole 5 14 Third air inlet plate 55 Third air inlet hole 533 Second vertical hole 535 Fourth air inlet hole 552 Channel 5541

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Claims (1)

M241433 6. Scope of patent application1. A metal organic chemical vapor deposition device is used to deposit a plurality of metal oxide layers required on a wafer. The device includes: a base, which has a base plate, a An accommodation space, a plurality of support plates, a slide plate, a plurality of lifting guides, and an upper plate, wherein the slide plate is placed on a distant floor plate, and the distant support plates are parallel to the bottom plate, and the The lifting guide is perpendicular to the upper plate to support the upper plate, and can be locked on the slide plate by a slider to support the reaction chamber and the gas control device described later; a lifting device is placed in the accommodation A space is used for lifting a wafer; a heater is placed on the lifting device for heating the wafer to a specific temperature, and it has a heating rod and a platform; It is placed between the plurality of lifting guide rods to provide the wafer and the plurality of gas inlet rods, and the metal organic chemical vapor deposition place is provided by a gas-stabilizing rod. A gas control device, Sun strikes the reaction chamber. Together, "including H 2 At the top of the room, Li Ke and the plate have a number of second air inlet disks, and the third air inlet is provided with an air inlet groove; the temple has a plurality of air inlet holes, and its four sides are respectively opened to adjust the gas; Reaction chamber •, by depositing the required on the circle: a plurality of: = ::: in order to sequentially M241433 6. Scope of application for patents The product of 2 sets of metal-organic chemical vapor deposition as described in the first item of the scope of the scope of the patent application is a pneumatic cylinder. 3. The specific temperature of the heater in the metal organic chemical vapor deposition device described in item 1 of the scope of the patent application is preferably 600 ° C. 4. The metal organic chemical gas described in the scope of the patent application, item 1. Phase deposition I. The reaction chamber is preferably made of quartz tube material for the purpose of thermal insulation and transparency. 5. The metal-organic chemical vapor deposition device according to item 1 of the scope of patent application, wherein the outer side of the reaction chamber is covered with a shell cover, and one side of the shell cover has a water inlet hole and a spiral cooling A tank and a water outlet hole for cooling the reaction chamber, and the other side of the outer cover has an air suction hole for evacuating the reaction chamber. 6. The metal organic chemical vapor deposition device according to item 1 of the scope of the patent application, wherein the first air inlet tray 'cover is stacked on the first air inlet tray and under the first air inlet tray In this order, the first air intake disc and the second air intake disc. 7. The metal organic chemical vapor deposition device according to item 6 of the scope of the patent application, wherein the first air inlet plate, the > air inlet plate, and the third air inlet plate each have a circular ventilation with the same area. A plaque, and a first horizontal hole and a first straight hole are respectively opened on the four sides of the circular ventilation area of the first air inlet plate, and the four sides of the circular ventilation area of the second air inlet plate are respectively provided on the four sides ^ ^ A horizontal hole and a second vertical hole, and the circular ventilation zone of the third air inlet plate = a third horizontal hole and a third vertical hole are respectively provided on the four sides for air supply page 16 't M241433 6. The scope of patent application is entered. 8. The metal-organic chemical vapor deposition device according to item 7 of the scope of the patent application, wherein the circular ventilation area of the first air inlet plate has a plurality of first air inlet holes, and The circular ventilation area has a plurality of second air inlet holes and a plurality of third air inlet holes. The circular ventilation area of the third air inlet plate has a plurality of fourth air inlet holes and a plurality of fifth air inlet holes. Air holes and a plurality of sixth air inlets, wherein the plurality of first air inlets are in communication with the plurality of second air inlets and the plurality of fourth air inlets, and the plurality of third air inlets The hole system is in communication with the plurality of fifth air inlet holes, and the plurality of first air inlet holes, the plurality of second air inlet holes, the plurality of third air inlet holes, the plurality of fourth air inlet holes, and the plurality of first air inlet holes. The shape and size of the five air inlet holes and the plurality of sixth air inlet holes are the same, and a circle is opened in the plurality of first air inlet holes, the plurality of third air inlet holes, and the plurality of sixth air inlet holes. Air holes. 9. The metal-organic chemical vapor deposition device according to item 8 of the scope of the patent application, wherein the first air inlet holes are arranged at a distance from a circumference of the circular ventilation area, and are spaced apart from each other. A second row is discharged after a gap, and arranged in this order until the other circumference of the circular ventilation zone ', and a guide groove is provided outside the air guide hole of the plurality of first air inlet holes, so that a first gas can be The first horizontal holes, the first vertical holes, and the guide groove are used to enter the plurality of first air inlet holes. 1 0 · The metal organic chemical vapor deposition device according to item 8 of the scope of the patent application, wherein the second air inlet plate is provided at the same position as the plurality of first air inlet holes in its circular ventilation area Out of the plurality of second air inlet holes, a plurality of guide holes which are not connected with the first air inlet hole are installed on the periphery of the circular ventilation zone. Page 17 ^ 41433 VI. The third air intake hole with a patent application scope is provided outside the air guide holes of the plurality of third air intake holes-guide grooves, so that a second gas can pass through the second level The holes, the second vertical holes and the guide groove enter the plurality of third air inlet holes. 11. The metal-organic chemical vapor deposition method as described in the item § of the patent application scope, wherein the third air inlet plate is divided into a circular ventilation area and the first inlet, the hole, and the plurality of second inlets. A plurality of fourth air holes are provided at the same position as the air holes, and a plurality of fifth air holes are connected to the periphery of the circular ventilation area and the plurality of fifth air holes are connected to the air hole, and then the plurality of air holes A plurality of sixth grooves ^ are arranged on the distance between the fourth inlet holes and the plurality of fourth air inlet holes ^, and a guide, a cover t is provided outside the air guide hole of the plurality of sixth air inlet holes. A third gas can pass through the third horizontal hole, the third vertical hole, and into the plurality of sixth air inlet holes. Learn the gas phase: The metal organicated two gases described in item 9, 10 or 11 of the patent scope of Jing Shen Λ are preferably i t t. The first gas is preferably an oxygen gas, the magnesium, i A ′, ~ Argon, and the third gas is preferably a zinc < and cisplatin τ ^ or magnesium and the oxygen added. Add the argon first, and then the zinc in order13. If applying for a patent, learn a vapor deposition device, the metal organicization two gas described in item 10 or 11 is preferably-gas $ ° The first gas is preferably an oxygen gas, the second magnesium, and the cis added thereto, and the third gas is preferably a zinc or argon gas and the oxygen gas. The sequence is that the zinc or magnesium is added first, and then the sequence is the 1 4. As described in the patent application deposition device, each of the metal organic chemical vapor phase described in item 11 has 1 mm between an air inlet hole. Spacing, and M241433 6. Scope of patent application The diameter of the air guide hole is also 1 mm, and the diameter of the guide groove is 1 mm. IBB Page 19