CN101010447A - Substrate processing apparatus and semiconductor device manufacturing method - Google Patents

Substrate processing apparatus and semiconductor device manufacturing method Download PDF

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Publication number
CN101010447A
CN101010447A CNA2005800295736A CN200580029573A CN101010447A CN 101010447 A CN101010447 A CN 101010447A CN A2005800295736 A CNA2005800295736 A CN A2005800295736A CN 200580029573 A CN200580029573 A CN 200580029573A CN 101010447 A CN101010447 A CN 101010447A
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mentioned
substrate
plate
gas
treatment chamber
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CNA2005800295736A
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Chinese (zh)
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CN101010447B (en
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板谷秀治
野内英博
堀井贞义
佐野敦
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International Electric Co., Ltd.
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Hitachi Kokusai Electric Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Abstract

Particle generation is suppressed by reducing an area coming into contact with a gas and purge efficiency is improved by reducing a flow path volume. A substrate processing apparatus is provided with a processing chamber (1) for processing a substrate (2); a substrate transfer port (10) provided on the side plane of the processing chamber (1) for carrying in/out the substrate (2) to/from the processing chamber (1); a holding tool vertically movably provided in the processing chamber (1) for holding the substrate (2); supply ports (3, 4) provided upper than the holding tool for supplying the processing chamber (1) with a gas; an exhaust duct (35) provided in the periphery of the holding tool for exhausting the gas supplied to the processing chamber (1); and an exhaust port (5) which is provided lower than the upper plane of the exhaust duct (35) at the time of processing the substrate and exhausts the gas ejected by the exhaust duct (35) to the outside the processing chamber (1). At least a part of members configuring the exhaust duct (35) is vertically movably provided.

Description

The manufacture method of substrate board treatment and semiconductor device
Technical field
The present invention relates to a kind of substrate be remained on the substrate board treatment handled on the liftable maintaining body and the manufacture method of semiconductor device
Background technology
In recent years, along with semi-conductive microminiaturization, in the process that the requirement of high-quality semiconductor film is improved constantly, the stacking method of atomic shell level of alternately supplying with two or more reactant gasess is noticeable.As these reactant gases materials, utilize the reaction that contains the raw material and the oxygen of metal or contain the gas of nitrogen.
As film, can be divided into two kinds substantially from reactive mode.A kind of is that (Atomic Layer Deposition: ald), another kind is MOCVD (the Metal Organic Chemical Vapor Deposition: metal organic chemical vapor deposition) (for example referring to patent documentation 1, patent documentation 2) that is suitable for circulation method to ALD.In these methods, basic gas supply method is general, so utilize Figure 17 to describe.Figure 17 (a) is a schema, and Figure 17 (b) is gas supply figure on opportunity.In illustrated embodiment, be will gasification the raw material that contains metal as raw material A, with oxygen or the gas that contains nitrogen as raw material B.
Under the situation that adopts ALD, in operation 1,, raw material A is adsorbed on the substrate to substrate base feed A.In operation 2, discharge residual raw material A.In operation 3,, make the reaction of raw material B and raw material A and film forming to substrate base feed B.In operation 4, discharge residual raw material B.With 4 above-mentioned procedures is a circulation, make this circulation repeatedly repeatedly method be the ALD film.Gas shown in Figure 17 (b) supply with opportunity like that, during alternately base feed A and raw material B, implement exhaust based on Purge gas.
The MOCVD that is suitable for circulation method is to substrate base feed A, to carry out film forming by thermolysis in operation 1.In operation 2, discharge entrap bubble A.In operation 3,, carry out the film upgrading of accumulating film and handle to substrate base feed B.In operation 4, discharge residual raw material B.With 4 above-mentioned procedures is a circulation, make this circulation repeatedly repeatedly method be the film that is suitable for the MOCVD of circulation method.Gas shown in Figure 17 (b) supply with opportunity like that, during alternately base feed A and raw material B, implement exhaust based on Purge gas.
Usually, the reactive high situation of raw material A and raw material B is a lot, supplies with at the same time under the situation of these raw materials, can produce the accumulation that causes producing the film of foreign matter and membranous deterioration because of gas-phase reaction, causes the reduction of yield rate.Therefore, not residual for the unstripped gas that in front operation in 4 above-mentioned procedures is supplied with, implemented based on vacuumizing or the purification (exhaust) of rare gas element.Particularly, owing to the filming condition that directly influences substrate in the gas residue of substrates upstream portion, so exhaust fully is necessary.
But,,, exist the problem that the handling capacity in the production descends though then can realize sufficient exhaust if the needed time of exhaust is longer.
In addition, particularly under the situation that adopts ALD,, become generation particulate reason, so need dwindle the contact area of unstripped gas as much as possible because the possibility of accumulating film is all arranged on the whole zone, position of the absorption of the raw material in treatment chamber.Meanwhile, in order to shorten the time swap of two or more unstripped gas, need dwindle the flow path volume of unstripped gas as much as possible.
In addition, be used to implement the semiconductor-fabricating device of above-mentioned film, what mainly adopt is the one chip device that substrate is handled one by one.Want to utilize the one chip device to form that productivity is high, high-quality film, from the above-mentioned particle and the viewpoint of handling capacity, gas is supplied with and gas exhaust method is very important.
Patent documentation 1: TOHKEMY 2003-347298 communique
Patent documentation 2: TOHKEMY 2004-158811 communique
(inventing technical task to be solved)
Pedestal) and make the hoisting appliance of this maintaining body lifting usually, the one chip device has the maintaining body that is used to keep substrate (susceptor:.Be provided with the treatment chamber of this maintaining body, connecting the carrying room that is provided with the conveyance robot.Move into when taking out of at substrate, maintaining body descended, in the treatment chamber bottom, rely on the conveyance robot from carrying room to treatment chamber move into substrate or with its from the treatment chamber conveyance to carrying room.
When processing substrate, treatment chamber and carrying room are cut off, maintaining body is risen substrate is handled on treatment chamber top.For this reason, be provided with the driving part of maintaining body in the treatment chamber bottom, be provided with the conveyance mouth of substrate in the treatment chamber side.At this conveyance mouth, has the gate valve (gate valve) that is used to cut off treatment chamber and carrying room.
In one chip device in the past, when processing substrate, supply with and handle in the gas, gas not only is fed into the substrate on treatment chamber top, and (treatment chamber bottom) gas is also supplied with in the space of the back side one side that is formed on maintaining body to rising owing to maintaining body.Therefore, to be deposited on chamber bottom or driving part, conveyance mouth, gate valve etc. be inevitable to film.With regard to the treatment chamber bottom of the back side one example that is hidden in maintaining body and driving part or conveyance mouth, gate valve etc., be difficult to remove the film that is deposited in above them by implementing to shield (screening).Therefore can think, flow into treatment chamber bottom below the maintaining body handling gas, on chamber bottom or driving part, conveyance mouth, gate valve etc., have under the long-pending situation of membrane stack, when driving part moves, produce the particulate reason because of peeling off of accumulating film becomes, make semi-conductive decrease in yield.Particularly under the situation that adopts ALD, owing to the position of adsorbing is whole zone rather than is limited to high-temperature part, so can think that this is a very big problem.
In addition, in the one chip device, under the situation of the MOCVD that adopts ALD or suitable circulation method, because the needed time of each operation is bigger to the productivity influence of device, so need to shorten the time of each operation.In order to adapt to this needs, must on substrate, supply with expeditiously and handle gas, purify entrap bubble expeditiously, the contact gas area and the flow path volume that reduce as much as possible in the treatment chamber are very important for this reason.But, in one chip device in the past, when supplying with processing gas or purifying entrap bubble, processing gas, Purge gas not only flow to treatment chamber top, and flow to the space (treatment chamber bottom) that is formed on the back side one side of maintaining body owing to the rising of maintaining body.Therefore, flow path volume is bigger in treatment chamber, is difficult to shorten the time swap of two or more unstripped gas, is not easy to make handling capacity to improve.
Summary of the invention
Problem of the present invention is to provide the manufacture method of a kind of substrate board treatment and semiconductor device, adopt the manufacture method of this substrate board treatment and semiconductor device, can solve above-mentioned prior art problems, by reducing contact gas area and the flow path volume in the treatment chamber, can suppress particulate and produce, handling capacity is improved.
(in order to solve the means of problem)
Technical scheme 1 of the present invention is a kind of substrate board treatment, and it has: be used for treatment chamber that substrate is handled; Be set on the treatment chamber side and with substrate with respect to the substrate transferring mouth of moving in the treatment chamber, taking out of; The maintaining body that liftably is arranged in the treatment chamber, substrate is kept; Compare with maintaining body and to be set at top, the supplying opening of supply gas in treatment chamber; Be set at maintaining body around, discharge the exhaust-duct be fed into the gas in the treatment chamber; Compare above the exhaust-duct during with processing substrate and be set at the below, be used for passing through the venting port that the exhaust-duct expellant gas is discharged outside treatment chamber, wherein, at least a portion of the parts of formation exhaust-duct is constituted as can lifting.
In above-mentioned structure, indoor if substrate is moved into processing, then by maintaining body is risen, move into the indoor substrate of processing and be placed on the maintaining body.When maintaining body was risen, at least a portion that constitutes the parts of exhaust-duct rose.To being placed on the substrate supply gas on the maintaining body, and by be arranged on maintaining body around the exhaust-duct discharge gas, thus substrate is handled.By the exhaust-duct expellant gas, from being discharged to outside the treatment chamber with the venting port of comparing above the exhaust-duct below being set at.After processing substrate, descend by making maintaining body, the substrate after the processing becomes the state that can be taken out of.When maintaining body was descended, at least a portion that constitutes the parts of exhaust-duct descended.Substrate after the processing is taken out of from treatment chamber.
According to the present invention, be used for and be fed into the exhaust-duct of the gas discharge in the treatment chamber owing to around maintaining body, have, so, compare the gas in the treatment chamber top that is fed into the top with maintaining body, around maintaining body, discharge to venting port by the exhaust-duct.Therefore, can prevent that gas is rolled into compares the treatment chamber bottom that is positioned at the below with maintaining body.In addition since at least a portion that will constitute the parts of exhaust-duct constitute can lifting, when making the processing substrate of maintaining body rising, the part of exhaust-duct also rises, so can reduce to contact gas area and gas flow path volume.
Technical scheme 2 is in the substrate board treatment of technical scheme 1, and at least a portion that constitutes the parts of exhaust-duct is constituted as and can carries out lifting with maintaining body in linkage with maintaining body.
Can carry out lifting with maintaining body in linkage with maintaining body if constitute at least a portion of the parts of exhaust-duct, then when the processing substrate that maintaining body is risen, because the part of exhaust-duct also rises with maintaining body, so can reduce to contact gas area and gas flow path volume.
In addition, because the part of exhaust-duct and the action lifting in linkage of maintaining body, so as long as make the maintaining body lifting, the part of exhaust-duct does not need to make the part lifting independently separately of exhaust-duct with its lifting automatically yet.In addition, do not need to make the hoisting appliance of a part of lifting of exhaust-duct.
Technical scheme 3 is in the substrate board treatment of technical scheme 1, and at least a portion that constitutes the parts of exhaust-duct is placed on the maintaining body, is constituted as and can carries out lifting with maintaining body.
If constituting the part of the parts of exhaust-duct is placed on the maintaining body, with maintaining body one lifting, then when the processing substrate that maintaining body is risen, because the part of exhaust-duct rises with maintaining body under the state that is placed on the maintaining body, so can reduce to contact gas area and gas flow path volume.
In addition, because the part of exhaust-duct and the action lifting in linkage of maintaining body, so as long as make the maintaining body lifting, the part of exhaust-duct does not need to make the part lifting independently separately of exhaust-duct with its lifting automatically yet.In addition, do not need to make the hoisting appliance of a part of lifting of exhaust-duct.
Technical scheme 4 is in the substrate board treatment of technical scheme 1, constitute at least a portion of the parts of exhaust-duct, move at substrate and to be configured in the position not relative when taking out of, when processing substrate, be configured in the position relative with at least a portion of substrate transferring mouth with the substrate transferring mouth.At this,, can enumerate and for example compare the position that is positioned at the below with the substrate transferring mouth as the position not relative with the substrate transferring mouth.In addition, as the position relative, the position that can enumerate at least a portion of for example blocking the substrate transferring mouth with at least a portion of substrate transferring mouth.
If the exhaust-duct is fixed on the processing substrate position, then move into when taking out of at substrate, for being taken out of with respect to moving in the treatment chamber, substrate becomes possibility, the substrate transferring mouth need be configured in the below of comparing with the exhaust-duct, so that exhaust-duct and substrate transferring mouth non-overlapping, if but like this, then the height of treatment chamber uprises.
At this on the one hand, in the present invention, because the part of exhaust-duct is constituted as can lifting, when processing substrate, this part is configured in the position of relative with the part of substrate transferring mouth (overlapping), so the part by this exhaust-duct and the equitant part of a part of substrate transferring mouth can make the treatment chamber height reduce, and exhaust-duct fixed situation is compared, can reduce the volume of treatment chamber integral body.In addition, can partly block stream, reduce to contact gas area and flow path volume by this eclipsed with respect to the substrate transferring mouth.
In addition, because the part of exhaust-duct that can lifting, move into when taking out of, be configured on the position of not relative with the substrate transferring mouth (not overlapping) at substrate, so, can not hinder substrate to take out of with respect to moving in the treatment chamber from the substrate transferring mouth.
Technical scheme 5 is that the exhaust-duct is set at the side of taking out of parts in technical scheme 1 described substrate board treatment.
Because the exhaust-duct is set at the side of maintaining body, so the gas that is fed in the treatment chamber can be discharged to venting port by the exhaust-duct from the side of maintaining body, therefore, can prevent that gas is rolled into compares the treatment chamber bottom that is positioned at the below with maintaining body, and can reduce to contact gas area and flow path volume.In addition, if the exhaust-duct is set at the side of maintaining body, this situation with the below that is set at maintaining body is compared, because the volume on the treatment chamber top that gas is supplied in the time of can reducing processing substrate, so can reduce the flow path volume of gas, and can reduce to contact the gas area.
Technical scheme 6 is in technical scheme 1 described substrate board treatment, and the exhaust-duct is configured to block the gap between treatment chamber side and the maintaining body side.
Because the exhaust-duct is configured to block the gap between treatment chamber side and the maintaining body side, be rolled into the back side one side of maintaining body so can prevent the gap between gas process treatment chamber side and the maintaining body side, can reduce to contact gas area and flow path volume.
Technical scheme 7 is that the exhaust-duct is made of the plate with the hollow part that is communicated with treatment chamber, and is placed on the maintaining body in technical scheme 1 described substrate board treatment, makes the part of plate cover at least a portion above the maintaining body.
Because the hollow part that plate has is communicated with treatment chamber, so can discharge the gas that is fed in the treatment chamber by this hollow part.In addition, because the part of plate is placed on above the maintaining body, make its at least a portion above covering maintaining body, so can block and not be placed on the maintaining body at plate, make it cover the maintaining body that is formed under situation above the maintaining body and the gap between the plate, can prevent that gas is rolled into the back side one side of maintaining body from the gap of asking of maintaining body side and plate, can reduce to contact gas area and flow path volume.
Technical scheme 8 is that hollow part is set between treatment chamber side and the maintaining body side in technical scheme 7 described substrate board treatments.
Because hollow part is set between treatment chamber side and the maintaining body side, so the gas that is fed in the treatment chamber can be discharged to venting port by hollow part between treatment chamber side and maintaining body side, therefore, can prevent that gas is rolled into compares the treatment chamber bottom that is positioned at the below with maintaining body, can reduce to contact gas area and flow path volume.In addition, if hollow part is set between treatment chamber side and the maintaining body side, then compare with the situation that is set at the maintaining body below, because the volume on the treatment chamber top that gas is supplied to when processing substrate diminishes, so can reduce the flow path volume of gas, and can also reduce to contact the gas area.
Technical scheme 9 is that the exhaust-duct is made of the plate with the hollow part that is communicated with treatment chamber in technical scheme 1 described substrate board treatment, and plate is made of second plate of first plate with recess and covering recess, and these plates are configured to and can separate.
Because plate is made of second plate of first plate with recess and covering recess, these plates are configured to and can separate, so as long as make the recess that is covered first plate when processing substrate by second plate, just can form hollow part.In addition, because this hollow part that forms is communicated with treatment chamber,, can reduce contact gas area and flow path volume so can discharge the gas that is fed in the treatment chamber by this hollow part.
Technical scheme 10 is in technical scheme 19 described substrate board treatments, and above-mentioned first plate is configured to can lifting, and above-mentioned second plate is maintained at the processing substrate position.
Because first plate is configured to can lifting, second plate is maintained at the processing substrate position, so, when processing substrate, by making first plate rise to the processing substrate position, can cover the recess of first plate and form hollow part by second plate, move into when taking out of the position at substrate, move into and take out of the position by making first plate drop to substrate, can separate.
Technical scheme 11 is that above-mentioned second plate has interior plate and outer panel in technical scheme 10 described substrate board treatments, and above-mentioned interior plate is placed on the above-mentioned outer panel.
Because second plate has interior plate and outer panel, interior plate is placed on the outer panel, thus can interior plate be moved by rising, the decline of first plate, and need not mobile outer panel.
Technical scheme 12 is in technical scheme 11 described substrate board treatments, and aforesaid substrate is moved under the state of processing substrate position, and only above-mentioned interior plate contacts with first plate, and above-mentioned outer panel does not contact with above-mentioned first plate.
Because substrate is moved under the state of processing substrate position, only interior plate contacts with first plate, and outer panel does not contact with first plate, so, can move to the processing substrate position by making substrate, with the interior plate jack-up that is placed on the outer panel.
Technical scheme 13 is in technical scheme 12 described substrate board treatments, be used in the hollow part of plate, discharging the relief outlet of gas, by forming making substrate move to the gap that between above-mentioned interior plate and above-mentioned outer panel, forms under the state of processing substrate position from above-mentioned treatment chamber.
In the hollow part of plate, discharge the relief outlet of gas from treatment chamber, move to the so simple structure in base conditioning position, just can form by the gap that between interior routine plate and outer panel, forms by making substrate.
Technical scheme 14 is in technical scheme 1 described substrate board treatment, described substrate board treatment also has controlling organization, control by controlling organization, alternately supply with two or more reactant gasess from supplying opening repeatedly, and alternately supplying with between the two or more reactant gasess, inserting the supply of Purge gas.
Owing to alternately repeatedly supplying with the supply of inserting Purge gas between the two or more reactant gasess, when carrying out such circular treatment, can prevent that gas is rolled into compares the treatment chamber bottom that is positioned at the below with maintaining body, so can reduce to contact gas area and gas flow path volume as much as possible, can carry out the supply of reactant gases and the purification of entrap bubble with the short time.
Technical scheme 15 is manufacture method of a kind of semiconductor device, wherein, has: the operation that substrate is moved in treatment chamber; By maintaining body is risen, handle indoor substrate and be placed on operation on the maintaining body moving into; To when being placed on the substrate supply gas on the maintaining body, discharge gas by the exhaust-duct on every side that is set at maintaining body, and the gas that will eject by the exhaust-duct is by being discharged to outside the treatment chamber with comparing the venting port that is set at the below above the exhaust-duct, thus the operation that substrate is handled; By maintaining body is descended, make substrate after the processing become the operation of the state that can be taken out of; With the operation that the substrate after handling is taken out of from treatment chamber, in the operation that makes maintaining body rise, descend, at least a portion and the maintaining body that constitute the parts of exhaust-duct rise simultaneously, descend.
According to technical scheme 15 of the present invention, owing to discharge gas by the exhaust-duct on every side that is set at maintaining body, will be by the exhaust-duct expellant gas from being discharged to outside the treatment chamber with comparing the venting port that is set at the below above the exhaust-duct, compare the treatment chamber bottom that is positioned at the below with maintaining body so can prevent that gas is rolled into.In addition, because feasible at least a portion that constitutes the parts of exhaust-duct rises, descends with maintaining body, hinder moving into of substrate to take out of so can prevent it.In addition since at least a portion that will constitute the parts of exhaust-duct constitute can lifting, when making the processing substrate of maintaining body rising, the part of exhaust-duct also rises, so can reduce to contact gas area and gas flow path volume.
Technical scheme 16 is in technical scheme 15 described substrate board treatments, in the processing substrate operation, substrate is alternately supplied with two or more reactant gasess repeatedly, and alternately supplying with between the two or more reactant gasess, insert the supply of Purge gas.
Like this, when carrying out the processing of sequential, though the purification efficiency of having relatively high expectations, but, even when carrying out such processing, because can prevent that gas is rolled into compares the treatment chamber bottom that is positioned at the below with maintaining body, and can reduce to contact gas area, gas flow path volume as much as possible, so can carry out the supply of reactant gases, the purification of entrap bubble at short notice.
Technical scheme 17 is in technical scheme 15 described substrate board treatments, the processing substrate operation comprises makes at least a reactant gases be adsorbed on operation on the substrate, with with respect to adsorbed reactant gases, supply with different with it reactant gasess to produce the operation of film formation reaction.
Like this, when carrying out the processing of sequential, though the purification efficiency of having relatively high expectations, but, even when carrying out such processing, because can prevent that gas is rolled into compares the treatment chamber bottom that is positioned at the below with maintaining body, and can reduce to contact gas area, gas flow path volume as much as possible, so can carry out the supply of reactant gases, the purification of entrap bubble at short notice.
In addition, the situation of ALD particularly, because on the whole zone, position of the absorption of the raw material in treatment chamber, the long-pending possibility of membrane stack is all arranged, become the reason that particle produces, so need reduce the contact area of unstripped gas as much as possible, meanwhile, in order to shorten the time swap of two or more unstripped gas, also need to reduce as much as possible the flow path volume of unstripped gas, but these problems can solve by the technical program.
Technical scheme 18 is that the processing substrate operation comprises the following operation of repeatedly carrying out repeatedly in technical scheme 15 described substrate board treatments: substrate is supplied with first reactant gases and make it to be adsorbed on operation on the substrate; After this operation that purifies; After this with respect to first reactant gases that is adsorbed on the substrate, supply with second reactant gases to produce the operation of film formation reaction; After this operation that purifies.
Like this, when carrying out the processing of sequential, though the purification efficiency of having relatively high expectations, but, even when carrying out such processing, because can prevent that gas is rolled into compares the treatment chamber bottom that is positioned at the below with maintaining body, and can reduce to contact gas area, gas flow path volume as much as possible, so can carry out the supply of reactant gases, the purification of entrap bubble at short notice.
In addition, the situation of ALD particularly, because on the whole zone, position of the absorption of the raw material in treatment chamber, the long-pending possibility of membrane stack is all arranged, become the reason that particle produces, so need reduce the contact gas area of unstripped gas as much as possible, meanwhile, in order to shorten the time swap of two or more unstripped gas, also need to reduce as much as possible the flow path volume of unstripped gas, but these problems can solve by the technical program.
Technical scheme 19 is that the processing substrate operation comprises following operation in technical scheme 15 described substrate board treatments: decompose by making at least a reactant gases, make the operation of film stack on aforesaid substrate; The membrane supplying reactant gases different with above-mentioned reactant gases piled up carried out the operation of the upgrading of above-mentioned film.
Like this, when carrying out the processing of sequential, though the purification efficiency of having relatively high expectations, but, even when carrying out such processing, because can prevent that gas is rolled into compares the treatment chamber bottom that is positioned at the below with maintaining body, and can reduce to contact gas area, gas flow path volume as much as possible, so can carry out the supply of reactant gases, the purification of entrap bubble at short notice.
Technical scheme 20 is that the processing substrate operation comprises the following operation of repeatedly carrying out repeatedly in technical scheme 15 described substrate board treatments: the processing substrate operation comprises the following operation of repeatedly carrying out repeatedly: aforesaid substrate is supplied with first reactant gases and made the operation of film stack on aforesaid substrate; After this operation that purifies; After this to membrane supplying second reactant gases on aforesaid substrate, piled up and carry out the operation of the upgrading of above-mentioned film; After this operation that purifies.
Like this, when carrying out the processing of sequential, though the purification efficiency of having relatively high expectations, but, even when carrying out such processing, because can prevent that gas is rolled into compares the treatment chamber bottom that is positioned at the below with maintaining body, and can reduce to contact gas area, gas flow path volume as much as possible, so can carry out the supply of reactant gases, the purification of entrap bubble at short notice.
(effect of invention)
According to the present invention, by reducing contact gas area and the flow path volume in the treatment chamber, can suppress particulate and produce, handling capacity is improved.Therefore, can form the higher high-quality film of productivity.
Description of drawings
Fig. 1 is used for the substrate that the substrate board treatment based on first embodiment describes is moved into longitudinal sectional view when taking out of.
Longitudinal sectional view when Fig. 2 is the film forming that is used for the substrate board treatment based on first embodiment is described.
Fig. 3 is based on the explanatory view of the plate (plate) of first embodiment, wherein, (a) is vertical view, (b) is side-view, (c) is front view, (d) is A-A line sectional view, (e) is B-B line sectional view.
Fig. 4 is will be based on the stereographic map after the plate biopsy cavity marker devices of first embodiment.
Fig. 5 is the explanatory view of expression based on the variation of the plate of first embodiment, wherein, (a) be the sectional view that relief outlet does not have the plate that conducts the type of adjusting function, (b) cover the sectional view of the plate of the whole type of pedestal (susceptor) for plate, (c) for to stride the sectional view that is provided with the plate of plate venting port to the bottom surface from the outer side wall of hollow part.
Fig. 6 is the explanatory view of expression based on the variation of the plate of first embodiment, is the sectional view with plate and the incorporate pedestal of pedestal.
Fig. 7 is used for the substrate that the substrate board treatment based on second embodiment describes is moved into longitudinal sectional view when taking out of.
Longitudinal sectional view when Fig. 8 is the film forming that is used for the substrate board treatment based on second embodiment is described.
Fig. 9 is the major portion enlarged view of Fig. 8.
Figure 10 is the explanatory view of expression based on the variation of the substrate board treatment of second embodiment, wherein, (a) moves into sectional view when taking out of, the sectional view when (b) being processing substrate for substrate.
Figure 11 is based on the explanatory view of the substrate board treatment of the 3rd embodiment, wherein, (a) moves into major portion sectional view when taking out of, the major portion sectional view when (b) being processing substrate for substrate.
Major portion sectional view when Figure 12 is expression based on the processing substrate of the variation of the substrate board treatment of the 3rd embodiment.
Figure 13 is the explanatory view of expression based on the substrate board treatment of the 3rd embodiment, wherein,
(a) be the major portion sectional view of an example only constituting by outside board of second plate,
(b) be that second plate only is made of outside board, and constituted the major portion sectional view of an example of a part of the recess of first plate.
Figure 14 is the explanatory view based on first plate of the 3rd embodiment, wherein, (a) is stereographic map, (b) is A-A line sectional view, (c) is B-B line sectional view.
Figure 15 is the explanatory view based on second plate of the 3rd embodiment, is the stereographic map of the state that is separated of expression outer panel and interior plate.
Longitudinal sectional view when Figure 16 is the processing substrate that is used for expression is described based on the substrate board treatment of another form of the gas supply method of the 4th embodiment.
Figure 17 is the explanatory view of basic gas supply method general among the MOCVD that is illustrated in as the ALD of film and suitable circulation method, wherein, (a) is schema, (b) is gas supply figure on opportunity.
Nomenclature:
1: treatment chamber
2: substrate
3,4: supplying opening
5: venting port
6: pedestal (maintaining body)
9: hoisting appliance
10: the substrate transferring mouth
35: the exhaust-duct
40: the treatment chamber side
Embodiment
With reference to the accompanying drawings the processing mode that the present invention was suitable for is described.In addition, be will be as the raw material Ru (EtCp) that contains metal at this to adopt as first reactant gases 2(diethyl cyclopentadienyl ruthenium) carried out the gas of gasification, adopts oxygen or as the oxygen that contains the gas of nitrogen as second reactant gases, carries out on silicon substrate being treated to ALD as the ruthenium film of metallic membrane film forming that example describes.
Fig. 1 and Fig. 2 are used for sectional view that the substrate board treatment based on the one chip of first embodiment is described.Fig. 1 moves into longitudinal sectional view when taking out of, the longitudinal sectional view when Fig. 2 is processing substrate for substrate.
As shown in Figure 1, substrate board treatment has: be used for treatment chamber 1 that substrate 2 is handled; Be set on the side 40 of treatment chamber 1 and with substrate 2 with respect to the substrate transferring mouth 10 of moving into, taking out of in the treatment chamber 1; Liftably be arranged in the treatment chamber 1, as the pedestal 6 of the maintaining body that substrate 2 is kept.In addition, have to compare and be set at top, the supplying opening 3,4 of supply gas in treatment chamber 1 with pedestal 6; Be set at pedestal 6 around, be used to discharge the exhaust-duct 35 of institute's gas supplied in treatment chamber 1.In addition, also has the venting port 5 of outside treatment chamber 1, discharging with by exhaust-duct 35 expellant gas.
Treatment chamber 1 is that circular upper container 46 and following container 47 constitutes flats by the cross section.This treatment chamber 1 is constituted as can be to substrate 2 in airtight flat internal space, and for example a silicon substrate (silicon wafer) is handled.Upper container 46 and following container 47 for example are made of metals such as aluminium, stainless steels.
Substrate transferring mouth 10 is set at down on the side of container 47.Being extended the opening that prolonging of the outside portion, be provided with carrying room 9a via gate valve 11 from this substrate transferring mouth 10.At carrying room 9a, be provided with conveyance robot 45 as transport mechanism.Rely on this conveyance robot 45, can be under the state of having opened gate valve 11 by substrate transferring mouth 10 with substrate 2 from carrying room 9a conveyance in treatment chamber 1 or from treatment chamber 1 conveyance to carrying room 9a.In addition, can in substrate transferring mouth 10, supply with Purge gas by valve 19.As Purge gas, can enumerate Ar, N 2, rare gas element such as He.
Pedestal 6 is set in the treatment chamber 1, for discoideus, is constituted as the posture that substrate 2 can be remained on approximate horizontal thereon.Establish the well heaters such as ceramic heater 6 by temperature control device 21 controls in the pedestal 6, it is used for substrate 2 is heated to specified temperature.In addition, pedestal 6 is constituted as and exhaust-duct 35 can be bearing on the periphery of the substrate 2 that is being held.Pedestal 6 has bolster 59.Bolster 59 is that the communicating pores 58 from the bottom center of the following container 47 that is set at treatment chamber 1 is inserted into along vertical direction, can make pedestal 6 move up and down by hoisting appliance 9.The conveyance of substrate 2 is carried out in the substrate transferring position (shown in Figure 1 position) of pedestal 6 below being positioned at, and the processing substrate position above being positioned at (position shown in Figure 2) carried out film forming and handled.When the pedestal 6 that is supporting exhaust-duct 35 is positioned at above-mentioned processing substrate position, by exhaust-duct 35, the pedestal 6 that treatment chamber 1 inherent above-below direction is separated, forming up and down in treatment chamber 1 compared the treatment chamber top 1a and the treatment chamber bottom 1b that compares with exhaust-duct 35 below being positioned at above being positioned at exhaust-duct 35.In addition, can supply with Purge gas to communicating pores 58 by valve 18.As Purge gas, utilize and enumerate Ar, N 2, rare gas element such as He.Pedestal is for example by quartz, carbon, pottery, silicon carbide (SiC), aluminum oxide (Al 2O 3) or aluminium nitride formations such as (AlN).
Gas supply port 3,4 is to be set at the top owing to be set on the upper container 46 so compare with pedestal 6.Central part at the upper container 46 relative with pedestal 6 is provided with the shower plate 8a with a plurality of holes, and gas supply port 3,4 is positioned at the top of this shower plate 8a.Gas supply port the 3, the 4th, ground connection adjacent one another are is provided with.Be fed into the space of the top of shower plate 8a from gas supply port 3,4 gas supplied, and be fed on the substrate 2 from a plurality of holes of shower plate 8a with being the spray shape, radially on substrate 2, flow through along substrate, from substrate 2 peripheries by after the exhaust-duct 35 chatted, discharge (radial flow ejector half) to venting port 5.At this, described this radial flow ejector half is meant from the gas supply port of the top that is set at substrate and radially flows through on substrate 2 along substrate with respect to real estate supply gas in vertical direction, the circumferential type of venting port emission gases outside substrate.
On gas supply port 3,4, connecting the pipeline of two systems that are used for supply gas.One of them pipeline that is connected with gas supply port 3 is promptly supplied with the Ru as the organic liquid raw material used in the film forming of metallic membrane, for example ruthenium film (EtCp) for supplying with the pipeline of first reactant gases 2The Ru (EtCp) of (diethyl cyclopentadienyl ruthenium) 2Supply line 14.In addition, as described later, Ru (EtCp) 2 Supply line 14 is constituted as and can supplies with first reactant gases or Purge gas from gas supply port 3 in the 1a of treatment chamber top selectively.Another pipeline that is connected with gas supply port 4 is for supplying with the pipeline of second reactant gases, promptly with respect to the organic liquid raw material as the oxygen of the high gas of reactivity or contain the gas of nitrogen, for example supply with the oxygen supply pipeline 15 of oxygen.In addition, as described later, oxygen supply pipeline 15 is constituted as and can supplies with second reactant gases or Purge gas from gas supply port 14 in the 1a of treatment chamber top selectively.
At Ru (EtCp) 2On the supply line 14, be provided with Ru (EtCp) as liquid starting material 2Under liquid state, carry out flow control liquid flow rate control device 23, be used for the Ru (EtCp) that will be carried out flow control 2The gasifier 25 of liquid gasification and the Ru (EtCp) that is used to make gasification 2Stop valve 12 to pipeline 14 supplies.At this Ru (EtCp) 2The downstream side of the valve 12 of supply line 14 is connecting Ar supply line 57, and is constituted as and the Ar gas that has been carried out flow control by flow rate control device 22 can be supplied to Ru (EtCp) by valve 16 2 Supply line 14.
In addition, can not supply with Ar yet, and supply with N from Ar supply line 57 2, rare gas element such as He.
Like this, import gas to supplying opening 3 following three kinds of selections can be arranged.
(1) opens Ru (EtCp) 2The valve 12 of supply line 14 cuts out the valve 16 of Ar supply line 57, thus, and only will be by the Ru (EtCp) of gasifier 25 gasifications 2Gas is from Ru (EtCp) 2 Supply line 14 imports to supplying opening 3 individually.
(2) and then valve 16, with Ru (EtCp) by opening Ar supply line 57 2The mixed gas of gas and Ar gas is from Ru (EtCp) 2 Supply line 14 imports to supplying opening 3.
(3) make Ru (EtCp) from gasifier 25 2The supply of gas stops, from Ru (EtCp) 2 Supply line 14 only imports to supplying opening 3 individually with Ar gas.
On oxygen supply pipeline 15, be provided be used for to oxygen carry out flow control flow rate control device 24, be used to make the remote control plasma cell (remote plazma unit) 33 of the oxygen activityization that has been carried out flow control and be used to make the oxygen of sensitization to stop the valve of supplying with to pipeline 15 13.Downstream side at the valve 13 of this oxygen supply pipeline 15, connecting above-mentioned Ar supply line 57 by take-off line 57a with the form of arm, and be constituted as and the Ar gas that has been carried out flow control by flow rate control device 22 can be supplied to oxygen supply pipeline 15 by valve 17.
Like this, import gas to supplying opening 4 following three kinds of selections can be arranged.
(1) open the valve 13 of oxygen supply pipeline 15, the valve 17 of close fork pipeline 57a, thus, the oxygen (below be also referred to as sensitization oxygen) that only will carry out sensitization in remote control plasma cell 33 imports to supplying opening 4 individually from oxygen supply pipeline 15.
(2) and then valve 17, the mixed gas with sensitization oxygen and Ar gas imports to supplying opening 4 from oxygen supply pipeline 15 by opening take-off line 57a.
(3) supply from the sensitization oxygen of minute remote control plasma cell 33 is stopped, only Ar gas is imported to supplying opening 4 individually from oxygen supply pipeline 15.
Exhaust-duct 35 be set at pedestal 6 around, and be constituted as when carrying out processing substrate and can will around pedestal 6, discharge to the treatment chamber top 1a gas supplied of comparing with pedestal 6 above being positioned at, thus, can make this gas not be discharged into treatment chamber 1 outer (referring to Fig. 2) with can not flowing to treatment chamber bottom 1b.This exhaust-duct 35 is made of the plate 7 with the hollow part (plate buffer, plate buffering) 27 that is communicated with treatment chamber top 1a.Plate 7 has relief outlet 26 and plate venting port 28, is constituted as the gas that is fed in the 1a of treatment chamber top to be discharged in the hollow part 27 from relief outlet 26, and the gas slave plate venting port 28 that is discharged in the hollow part 27 is discharged.
The part of plate 7 is placed on the pedestal 6, is covered with at least a portion above the pedestal 6.Like this, the exhaust-duct 35 that constitutes by plate 7 can with the action of pedestal 6 in linkage with pedestal 6 one liftings.In addition, because the part of plate 7 is covered with at least a portion above the pedestal 6, so can prevent that film is stacked into this and is capped on the part, in addition, can be blocked in plate 7 and not be placed on the pedestal 6 pedestal 6 that forms when covering above the pedestal 6 and the gap between the plate 7, prevent between the side of pedestal 6 and the plate 7 gas being rolled into the back side one side of pedestal 6.
The position not relative with substrate transferring mouth 10 moved into, is being configured in when taking out of substrate in exhaust-duct 35 (hollow part 27), for example compares the position (referring to Fig. 1) that is positioned at the below with substrate transferring mouth 10; When processing substrate, then be configured in the relative position of a part (top) with substrate transferring mouth 10, promptly block the position (referring to Fig. 2) of at least a portion of substrate transferring mouth 10.Can block the gap between treatment chamber side 40 and the pedestal side 60 when in addition, exhaust-duct 35 is provided in processing substrate.Move into, when taking out of substrate exhaust-duct 35 is configured in compare with substrate transferring mouth 10 below, be in order to make exhaust-duct 35 not hinder moving into of substrate to take out of.In addition, when processing substrate, exhaust-duct 35 is configured in the position of at least a portion of blocking substrate transferring mouth 10, be for a part and the substrate transferring mouth 10 of exhaust-duct 35 is overlapping, rely on eclipsed partly to reduce the treatment chamber height, the volume of treatment chamber integral body is reduced.In addition, be in order only to rely on eclipsed partly to block substrate transferring mouth 10, to suppress being involved in of gas, reducing to contact the gas area.In addition, exhaust-duct 35 being arranged to block the gap between treatment chamber side 40 and the pedestal side 60 when processing substrate, is the stream that leads to treatment chamber bottom 1b in order to interdict, and makes gas not flow to treatment chamber bottom 1b from treatment chamber top 1a.
Utilize Fig. 3 and Fig. 4 below, in further detail exhaust-duct 35 is described.Fig. 3 is the sciagraph and the sectional view of plate 7, wherein, (a) is vertical view, (b) is side-view, (c) is front view, (d) is A-A line sectional view, (e) is B-B line sectional view.Fig. 4 is the stereographic map with plate 7 biopsy cavity marker devices.
The global shape that constitutes the plate 7 of exhaust-duct 35 is flat ring bodies, be set at flat discoideus pedestal 6 around.The hollow part 27 that plate 7 has with the mode of surrounding pedestal 6 be set in the form of a ring with plate 7 be placed on part on the pedestal 6 above be in a ratio of the side circumferential position (referring to Fig. 4) of below, pedestal 6.
Plate 7 with hollow part 27 is made of first plate 37 and second plate 36, and these plates become as a whole.First plate 37 has the cyclic recess 37a of upper opening.Recess 37a will be fed into the exhaust-duct that 1a interior gas in treatment chamber top is directed at venting port 5 when forming processing substrate.Second plate 36 is covered with the part of the opening 37a of first plate 37, is formed by the annular plate that forms hollow part 27, can hold the substrate 2 that is placed on the pedestal 6 in the hole 34 of central part.
In addition, second plate 36 be set at substrate 2 around, be constituted as and can be controlled at airflow flowing on the substrate 2.At this, plate 7 is supported on the periphery of pedestal 6 in the mode of stretching out to treatment chamber side 40 from pedestal 6.In addition, plate 7 is that the mode that surface surperficial with it and substrate 2 is on same is set up.Thus, as second plate 36, also having can be with reactant gases or Purge gas (also being called gas sometimes simply) abreast or the function of supplying with on real estate equably as cowling panel.
For second plate 36, adopt its external diameter smaller, the plate that its internal diameter is littler than the diameter of the inner side-wall of recess 37a than the diameter of the outer side wall of the recess 37a of first plate 37 (inner-wall surface).Be placed on first plate 37 to 37 one-tenth concentric circles of this second plate 36 and first plate.Owing to be such structure, so the upper opening not exclusively overlapping (promptly overlapping) of the recess 37a of second plate 36 and first plate 37 forms the upper opening with respect to the recess 37a of first plate 37, second plate, 36 radius vectors are the form of side's skew inwardly.Therefore, second plate 36 only is placed on the upper end of inner side-wall of recess 37a of first plate 37.In addition, be the boundary with the part on the upper end of the inner side-wall that is placed on recess 37a, the outer peripheral portion of second plate 36 is called plate Outboard Sections 36a, interior circumferential portion is called plate inside part 36b.By of the upper opening skew of second plate 36 from above-mentioned recess 37a, formed the cyclic gap in upper periphery one side that covers the hollow part 27 that forms by the plate Outboard Sections 36a by second plate 36, this cyclic gap becomes the top cyclic relief outlet 26 (referring to Fig. 3 (a) and Fig. 3 (e)) that is formed on plate 7.In addition, the plate inside part 36b that compares second plate 36 that stretches out to the inside with the inner side-wall of recess 37a becomes the part of the plate 7 on the top periphery that is placed on pedestal 6.
In addition, relief outlet 26 also has the conduction (conductance) that is used to make airflow flowing homogenizing on silicon substrate 2 and adjusts function except have the function that the gas that is fed in the 1a of treatment chamber top is discharged in hollow part 27.Promptly, relief outlet 26 is to control the gaseous tension that is fed into the gas on the substrate 2 by the amount of the gas of the hollow part 27 that the treatment chamber top 1a from the top that is positioned at plate 7 is discharged to plate 7 via this relief outlet 26, makes pressure distribution homogenizing on the substrate 2.The exhaust of this venting port 26 conduction is to realize adjusting by position skew that makes second plate 36 or the shape etc. that changes the plate Outboard Sections 36a of second plate 36.
Outer side wall at first plate 37 is provided with plate venting port 28.This plate venting port 28, at the outer side wall of first plate 37 among full week, with below relief outlet 26 is in a ratio of and the part relative with venting port 5, promptly be formed arcuation in the outer side wall bottom of first plate 37, can will be discharged to gases in the hollow part 27 from relief outlet 26 to venting port 5 dischargings.(referring to Fig. 3 (b) and (d)).In addition, above-mentioned plate 7 is for example by quartzy, pottery series (AlN, Al 2O 3, SiC) etc. formation.
The venting port 5 that gas is discharged outside above-mentioned treatment chamber 1 be set at the another side of distolateral substrate transferring mouth 10 opposition sides that are arranged at down container 47 and with the below of comparing above the exhaust-duct 35 of (referring to Fig. 2) when the treatment substrate.This venting port 5 is connected on the vacuum pump 51, can will discharge outside treatment chamber 1 from exhaust-duct 35 expellant gas.In the treatment chamber 1, can be controlled at the pressure of regulation as required by pressure control mechanism 20.
In addition, in the bottom of the treatment chamber bottom 1b that descends container 47, be provided with at the jack-up pin 8 of moving into, substrate 2 being kept when taking out of substrate temporarily.This jack-up pin 8 is configured to run through the communicating pores that has been set among pedestal 6 and the well heater 6a.In the substrate transferring reason position (Fig. 1) of pedestal 6, jack-up pin 8 highlights to keep substrate 2 from through hole.In the processing substrate position of pedestal (Fig. 2), jack-up pin 8 sinks from through hole, and substrate is maintained on the pedestal 6.
At this, the gas flow during to processing substrate describes.
From being fed into after gas supply port 3,4 gas supplied are disperseed by shower plate 8 on the silicon substrate 2 in the 1a of treatment chamber top, on silicon substrate 2, be radial and flow to the substrate radial outside.And radius vector is radially to foreign side and flows through on the plate 7 of peripheral part on cover pedestal 6, from be set at plate 7 above relief outlet 26 in cyclic hollow part 27, discharge.To the pedestal circumferential flow, slave plate venting port 28 is to venting port 5 dischargings in hollow part 27 for the gas that is discharged from.Thus, prevented that it is the back side of pedestal 6 and the bottom 42 of treatment chamber 1 that unstripped gas is rolled in the 1b of treatment chamber bottom.At this moment, open valve 18,19 simultaneously, the bottom of conveyance mouth 10, communicating pores 58, treatment chamber 1, the back side of pedestal 6 are purified, can prevent that unstripped gas is rolled into treatment chamber bottom 1b by Purge gas.
In addition, even just in case there is the unstripped gas of trace to be rolled into treatment chamber bottom 1b etc., also the unstripped gas of the trace that can will enter by the Purge gas of supplying with in the 1b of treatment chamber bottom is diluted to the dysgenic degree that do not produce, and it is discharged from venting port 5.
In addition, substrate board treatment in the present embodiment, gas flow path volume by with processing substrate the time is defined as the treatment chamber top 1a between the inner-wall surface of the top and upper container 46 that is formed on pedestal 6 and plate 7 and the hollow part 27 of plate 7, has further reduced the volume of treatment chamber 1 integral body.
As mentioned above, constituted the substrate board treatment of present embodiment.
Below, as utilizing above-mentioned substrate board treatment to make a procedure of the operation of semiconductor device, the method for treatment substrate is described.At this, as previously mentioned, be treated to example with the film forming ALD that on silicon substrate, carries out the ruthenium film and describe.
In Fig. 1, move under the state of taking out of the position, open gate valve 11 in that pedestal 6 is dropped to.By the conveyance robot 45 in the carrying room 9a, a silicon substrate 2 is moved in the treatment chamber 1 via conveyance mouth 10, be displaced on the jack-up pin 8 and keep.After having closed gate valve 11, make pedestal 6 rise to the processing substrate position of regulation by hoisting appliance 9.At this moment, substrate 2 automatically is displaced on the pedestal 6 from jack-up pin 8.Fig. 2 is representing this state.In addition, rise to the processing substrate position, formed treatment chamber top 1a, below pedestal 6 and plate 7 and between the inner-wall surface of following container 47, formed treatment chamber bottom 1b at pedestal 6 and above the plate 7 and between the inner-wall surface of upper container 46 by pedestal 6.
21 couples of well heater 6a heat pedestal 6 with controlling by temperature control device, with the 2 heating regular hours of silicon substrate.Before film forming, opening valve 18 and 19, forming from conveyance mouth 10, communicating pores 58 by Purge gas (for example Ar) and pass through treatment chamber bottom 1b, therefore can prevent incoming stock gas (reactant gases) when film forming to the unidirectional air-flow of venting port 5 mobile.After silicon substrate 2 has been heated to the temperature of regulation and pressure-stabilisation, the beginning film forming.Film forming is to finish by 4 following procedures, is a circulation with 4 procedures, till the film of having piled up desirable thickness, will repeatedly circulate repeatedly.
In operation 1, open valve 12, make the liquid starting material Ru (EtCp) that has carried out flow control by liquid flow rate control device 23 2Gasification in gasifier 25 is from Ru (EtCp) 2Supply line via supplying opening 3, through importing in the treatment chamber 1 with being the spray shape behind the shower plate 8.In addition, can also open valve 17 this moment, by supply with Purge gas in oxygen supply pipeline 15, prevents gas Ru (EtCp) 2Adverse current is in oxygen supply pipeline 15.Ru (EtCp) 2Absorption in its surface after gas was fed on the silicon substrate 2.Residual gas from be arranged on plate 7 above relief outlet 26 in the hollow part 27 of plate 7, flow, slave plate venting port 28 is discharged, and outside venting port 5 is discharged into treatment chamber 1.
In operation 2, shut-off valve 12 is opened valve 16, will carry out the Ar gas of flow control from Ru (EtCp) by flow rate control device 22 2Supply line supplies in the treatment chamber 1 through shower plate 8a via supplying opening 3 with being the spray shape.Remain in Ru (EtCp) 2Ru (EtCp) in supply line 14 and the treatment chamber 1 2Gas purifies by Ar gas, from be arranged on plate 7 above venting port 26 in the hollow part 27 of plate 7, flow, slave plate venting port 28 is discharged, and outside venting port 5 is discharged into treatment chamber 1.
In operation 3, shut-off valve 16 is opened valve 13, makes the oxygen activityization of having carried out flow control by flow rate control device 24 by remote control plasma cell 33.With sensitization oxygen from oxygen supply pipeline 15 via supplying opening 4, supply in the treatment chamber 1 through shower plate 8a with being the spray shape.In addition, can also be under the situation of shut-off valve 16 not (keeping the state of opening), by to Ru (EtCp) 2 Supply line 14 sustainable supply Ar gases prevent that gas (sensitization oxygen) adverse current is to Ru (EtCp) 2In the supply line 14.In addition, do not use remote control plasma cell 33 sometimes, oxygen is supplied with under not by the state of sensitization.Be fed on the silicon substrate 2 by sensitization oxygen, with the Ru (EtCp) that is adsorbed on the silicon substrate 2 2Reaction (by surface reaction) forms the ruthenium film thus.Residual gas from be arranged on plate 7 above relief outlet 26 in the hollow part 27 of plate 7, flow, slave plate venting port 28 is discharged, and outside venting port 5 is discharged into treatment chamber 1.
In operation 4, shut-off valve 13 is opened valve 17, will have been carried out the Ar gas of flow control by flow rate control device 22,, supplies in the treatment chamber 1 through shower plate 8a via supplying opening 4 from oxygen supply pipeline 15 with being the spray shape.Remain in the oxygen in oxygen supply pipeline 15 and the treatment chamber 1, purify by Ar gas, flow in dash plate (hollow part) 27 from the lip-deep relief outlet 26 that is arranged on plate 7, slave plate venting port 28 is discharged, and outside venting port 5 is discharged into treatment chamber 1.
With 4 above-mentioned procedures is a circulation, till having piled up the ruthenium film of desirable thickness, will repeatedly circulate repeatedly.In order to improve handling capacity, 1～4 needed time of operation preferably in each operation below 1 second.After film forming finished, pedestal 6 relied on hoisting appliance 9 to drop to move into and takes out of the position, and after having opened gate valve 11, silicon substrate 2 is taken out of carrying room 9a by conveyance robot 45 through conveyance mouth 10.
As the scope of treatment condition, preferably, temperature is 200～500 ℃, pressure be 0.1～10Torr (13.3～1330Pa), be 0.1～2s1m to the total flux of treatment chamber gas supplied, thickness is 1～50nm.
In addition, the pressure in the substrate temperature in each operation, the treatment chamber is controlled by temperature control device 21, pressure control mechanism 20 respectively.In addition, this temperature control device 21, pressure control mechanism 20 and each valve 12～13,16～19, gasifier 25, remote control plasma cell 33, flow rate control device 22～24 etc. constitute the action of the each several part of substrate board treatment, carry out overhead control by controlling organization 59.
Below the effect of above-mentioned embodiment is described.
The first, can prevent that film is to chamber bottom 42 accumulations such as grade.This is because the hollow part 27 by plate 7 carries out exhaust, has prevented that gas is rolled into treatment chamber bottom 1b, has reduced contacting between the gas of treatment chamber bottom 1b and inner-wall surface.In addition, even just in case there is the unstripped gas of trace to be rolled into treatment chamber bottom 1b etc., also the micro material gas dilution that can will be involved in by the Purge gas of supplying with in the 1b of treatment chamber bottom from conveyance mouth 10, communicating pores 58 is discharged from venting port 5 to not film forming degree.Therefore, can reduce the accumulation of film significantly, prevent from effectively when driving part moves to peel off and produce particle because of accumulating film to chamber bottom 42, driving part, conveyance mouth 10, gate valve 11 etc.
Under the situation that the plate 7 with hollow part 27 is not set, gas is rolled into chamber bottom etc., will the long-pending situation of membrane stack appears, when having piled up the film of allowing more than the thickness, need change the whole and even following container 47 of treatment chamber, if side by side change treatment chamber 1, then the loss of time and expense is very big.In addition, though also can consider on chamber bottom 42, to be provided for separately the cover that prevents that membrane stack is long-pending,, because be difficult to pedestal 6 is arranged on the driving part, so impracticable.Aspect this, in the present embodiment, owing to prevent that effectively membrane stack is long-pending to the chamber bottom accumulation, thus do not need to change treatment chamber, thus the productivity of device can be improved, and can reduce installation cost.
The second, can prevent that film from piling up on pedestal 6.Pedestal 6 has the well heater 6a that substrate 2 is heated, and than the temperature height of substrate, film also can be stacked on this pedestal 6 as a rule.After accumulating film is accumulated, will peel off sooner or later, become sources of particles, make semi-conductive decrease in yield.But, in the present embodiment,, pile up to the peripheral part of pedestal 6 so can prevent film owing to be covered with the top peripheral part of pedestal 6 with the part (plate inside part 36b) of plate 7.Even when contingency has the accumulation of trace to be formed on the pedestal 6, also can be under situation about film can be removed by gas sweetening (gas cleaning), before peeling off, safeguards accumulating film by gas sweetening, even but in this case, because the part of plate 7 covers on the top peripheral part of pedestal 6, so what the membrane stack on pedestal 6 was long-pending makes slow progress, so can prolong maintenance intervals.Therefore, the operation factor of device rises, and productivity improves.On the other hand, under the situation that is difficult to film is removed by gas sweetening, to change pedestal 6, but, even in this case, owing to the top peripheral part that is covered with pedestal 6 with the part of plate 7, so long-pending the making slow progress of the membrane stack on pedestal 6, the cycle that pedestal is changed is elongated, thereby can prolong its work-ing life.Therefore, the operation factor of device rises, and productivity improves, and installation cost reduces.
In addition,, in this case,, only change plate 7 and get final product, so can reduce time, the expense that spends in changing significantly because need not change pedestal 6 though on plate 7, also there is membrane stack long-pending.
The 3rd, can dwindle from contact gas area, the flow path volume of supplying opening 3,4 gas supplied.Its reason is, because the plate 7 that will have hollow part 27 is arranged on the periphery of pedestal 6, block gap between treatment chamber side 40 and the pedestal side 60 with first plate 37 that constitutes hollow part 27, gas is discharged to venting port 5 from hollow part 27 without 1b ground, treatment chamber bottom.
Like this,, can reduce the adhesion amount of unstripped gas in treatment chamber, suppress particulate and produce by dwindling contact gas area.
In addition, by dwindling flow path volume, can reduce the amount of the unstripped gas in the treatment chamber itself, the minimizing base feed gas volume and the residual unstripped gas scale of construction are so base feed gas and entrap bubble purified efficiently.Therefore, in the film of alternately supplying with two kinds of reactant gasess, can carry out the purification of unstripped gas supply, residual raw material with the short time.
Its result can realize the semiconductor-fabricating device of the highly productive that handling capacity is higher with high rate of finished products.
The 4th, can reduce the volume of treatment chamber integral body.If plate 7 overall fixed that will have hollow part 27 are in the processing substrate position, then move into when taking out of at substrate, in order in treatment chamber, to move into, take out of substrate, substrate transferring mouth 10 need be configured in the below of comparing with plate 7, so that plate 7 and substrate transferring mouth 10 non-overlappings.Like this, the height with treatment chamber integral body uprises, the volume of treatment chamber integral body becomes big shortcoming.But, in the present embodiment, because plate 7 is configured to can lifting, so move into when taking out of at substrate, plate 7 can be configured in the below compared with substrate transferring mouth 10, pedestal 6 sides, and when processing substrate, plate 7 can be configured to substrate transferring mouth 10 overlappingly, only the height of treatment chamber integral body be reduced by its eclipsed part.Therefore, the volume of treatment chamber integral body is dwindled, can further improve purification efficiency thus.
In addition, in the present embodiment,, adopted as the Ru (EtCp) that contains raw metal as first reactant gases 2,, adopted oxygen or conduct to contain the oxygen O of the gas of nitrogen as second reactant gases 2, still, the gas of Cai Yonging can suitably be selected from all gases according to purposes in the present invention.For example, as the unstripped gas that contains metal, except the metal that contains Ru, contain the raw material of any metal among Si, Al, Ti, Sr, Y, Zr, Nb, Sn, Ba, La, Hf, Ta, Ir, Pt, W, Pb, the Bi in addition.In addition, as oxygen or contain the gas of nitrogen, except O 2Outside, also have following gas, for example O 3, NO, N 2O, H 2O, H 2O 2, N 2, NH 3, N 2H 6Deng and these free radical kind or ion species of above-mentioned any gas sensitization being generated by sensitization mechanism.
In addition, in the one-tenth embrane method of present embodiment, ALD is illustrated, also mentioned circulation MOCVD, certainly, in addition, implemented since the past, supply with the film forming that contains the raw material and the oxygen of metal or contain the gas of nitrogen simultaneously, or by making the raw material that contains metal carry out thermolysis and also being utilizable in film forming MOCVD (Metal Organic ChemicalVapor Deposition, the metal organic chemical vapor deposition) method.
In addition, in the above-described embodiment, about the relief outlet 26 of 27 plate 7 with hollow part, to its be not top with hollow part 27 form standard-sized sheet but by dwindling into that slit-shaped ground forms so that its situation with function that conduction adjusts be illustrated.In addition, the part of plate 7 only is covered with the part of pedestal 6, and plate 7 and pedestal 6 is separated and situation about constituting independently is illustrated.Also have, the situation that the outer side wall at plate 7 has been formed plate venting port 28 is illustrated.But the present invention is not defined to these above-mentioned situations, but can carry out all distortion.
For example, the plate shown in Fig. 5 (a), illustrative is that the relief outlet 26 with plate 7 of hollow part 27 does not have the form of conducting the function of adjusting.That is, make need not second plate 36 cover the recess 37a of first plate 37, and with the upper opening standard-sized sheet ground of recess 37a form as relief outlet 26.As ALD, to silicon substrate 2, be main body in gas adsorption, under the less situation of the influence of gas flow, because also can be the form of not carrying out conducting adjustment, this illustrative form preferably is applicable to ALD.
In addition, also can set the slit that forms cyclic relief outlet 26 for identical width with upwards differing rule whole week, but for example change the size (width) of slit of the formation relief outlet of the size (width) of slit of formation venting port of venting port one side and an opposite example with it, change the conduction of venting port one side and an opposite side thus with it.This is in venting port one side and an opposite side with it, and the gaseous tension difference is effective in the time can not seeking the homogenizing of the pressure distribution on the substrate.
In addition, the variation of the plate shown in Fig. 5 (b), expression be the situation of the integral body on the part of plate 7 surface that is covered with pedestal 6.If it is whole to cover the surface of pedestal 6 in this wise, can prevent further that then film is to pedestal 6 accumulations.But this situation is because from the thermal conduction variation of the well heater 6a in the pedestal 6, so need select according to film.For example, in circulation MOCVD, temperature dependency is higher, but then not too exists with ... temperature in ALD.Therefore, this variation preferably is applicable to ALD.
In addition, in the example shown in above-mentioned Fig. 3 (b) and Fig. 3 (d), plate venting port 28 only is set on the outer side wall of first plate 37, but, shown in Fig. 5 (c), plate venting port 28 also can be arranged on from the outer side wall of first plate 37 and stride to the position of bottom surface, and can only be set on the bottom surface.
In addition, in Fig. 3 and Fig. 4, the diameter that makes the diameter in hole of the central part that is arranged on second plate 36 and silicon substrate 2 is similar shape roughly, but, as after the 3rd embodiment chatted, the diameter in hole that also can make the central part that is arranged on second plate is less than the diameter of silicon substrate 2, and this second plate 36 is placed in the mode of the periphery that covers silicon substrate 2.Like this, then can be implemented in a part of operation of the operation of making semiconductor device, for example the desired film of silicon substrate periphery that prevents adheres in the film formation process of the film of metal series such as Ru etc.
In addition, the variation of plate shown in Figure 6 is the situation that the plate 7 with hollow part 6b and the main body 6c of pedestal 6 constitute one.If in this wise that pedestal 6 and plate 7 (exhaust-duct) is integrated, then can seek the simplification of structure.In addition, this situation is preferably AlN as the material of pedestal.In addition, in this variation, expression be to make and the port area of the relief outlet 26 of venting port 5 opposite sides port area greater than the relief outlet 26 of venting port 5 one sides, make and the conduction of the relief outlet 26 of the opposite side of venting port 5 (plate venting port 28) example greater than the conduction of the relief outlet 26 of venting port 5 one sides.
But as mentioned above, in the first embodiment, the gap owing between the circumferential lateral surface 60 of blocking treatment chamber side 40 and pedestal 6 with plate 7 is rolled into treatment chamber bottom 1b so can prevent the gas that is fed into treatment chamber top 1a when processing substrate.But, even in this case,, make it with pedestal 6 lifting in treatment chamber 1 because the part of plate 7 is placed on the pedestal 6, so need guarantee the gap between the side of treatment chamber side 40 and plate 7, it is inevitable forming the gap.Therefore, can think, when processing substrate, be fed into the part of the gas of treatment chamber top 1a, not be discharged to the hollow part 27 of the plate 7 that constitutes exhaust-duct 35, but, be rolled into treatment chamber bottom 1b by this gap.
About this point, the inventor has following opinion.That is, plate by conveyance when the processing substrate position, if the gap that will be formed between plate side and the treatment chamber side is blocked in the processing substrate position, then can eliminate being involved in an of part of gas as described above.And, in order to make such situation become possibility, the inventor finds, if plate is made separable structure, the plate of the side by will be wherein is arranged to can lifting, and the opposing party's plate is remained on the processing substrate position, when a side plate is arrived the processing substrate position by conveyance, with being formed on a side plate and the gap between the treatment chamber side, block from above by the opposing party's plate, can realize.
Fig. 7 and Fig. 8 are based on the sectional view of substrate board treatment of the one chip of second embodiment.In this second embodiment, utilize separable plate as described above to prevent being involved in an of part of above-mentioned gas.Fig. 7 is the longitudinal sectional view of moving into when taking out of substrate, the longitudinal sectional view when Fig. 8 is processing substrate.Second embodiment since basically with first embodiment identical aspect the structure, so, to identical position additional phase with symbol and omitted explanation.The points different with first embodiment are that the hollow part 27 that will have the exhaust-duct 35 that constitutes first embodiment has been made separable structure.Below, main just different with first embodiment point at length describes.
Exhaust-duct 35 is made of the plate 7 with the hollow part 27 that is communicated with treatment chamber 1, and plate 7 is made of second plate 29 of the recess 39a of first plate 39 with recess 39a and covering first plate 39, and these parts are configured to and can separate.
This first plate 39 is made of recess 39a and flat part 39b.Recess 39a is configured to block the gap between the side 40 of the side of pedestal 6 and treatment chamber 1, forms the exhaust-duct of the gas channeling venting port 5 that will be fed into treatment chamber top 1a when processing substrate.Recess 39a is constituted as top and is opening, has plate venting port 28 with venting port 5 corresponding positions.Flat part 39b is covered with the integral body of pedestal 6, is placed on the pedestal 6, by prevent that the discoideus plate that film is piled up from constituting on pedestal 6.First plate 39 is placed on the pedestal 6 by the flat part 39b with it, be configured to can with pedestal 6 one liftings.
Second plate 29 is maintained at the processing substrate position.This second plate 29 is made of a plectane with loop shaped.On second plate 29, be provided with substrate 2 is taken in the hole 34 of perimembranous within it, be provided with at the peripheral part of the recess 39a that covers first plate 39 and be configured to a plurality of relief outlets 26 of cyclic.Second plate 29 is kept by the end difference (protuberance) 41 in the interior week that is arranged on treatment chamber 1.The below part of the side 40 of upper container 46 is compared with its upper section, and this below part is set at the inboard of treatment chamber 1, and the below medial surface 40b of upper container 46 compares outstanding to the inside part as above-mentioned end difference 41 with its top medial surface 40a.By second plate 29 is remained on this end difference 41, the end difference 41 of treatment chamber 1 and the gap between second plate 29 have been eliminated.
In addition, among second plate 29, be the boundary with relief outlet 26, interior perimembranous one side is called plate inside part 29b, peripheral part one side is called plate Outboard Sections 29a.Because plate Outboard Sections 29a and plate inside part 29b are constituted as one, and come supporting plate inside part 29b by the plate Outboard Sections 29a that directly keeps by end difference 41 if desired, then above-mentioned relief outlet 26 can not form continuously, but form discontinuously.
So, in structure as described above, as shown in Figure 7, move under the state of taking out of the position, take out of in order not hinder moving into of substrate, compare with substrate transferring mouth 10 in that pedestal 6 is dropped to, first plate 39 is configured in the below.In addition, second plate 29 is maintained on the end difference 41 with flat-hand position.Substrate 2 is being moved in the treatment chamber 1, and after placing it on the jack-up pin 8, made pedestal 6 rise to the processing substrate position by hoisting appliance 9.Along with the rising of pedestal 6, first plate 39 that is placed on the pedestal 6 rises with pedestal 6.Pedestal 6 is risen in the way of processing substrate position, and substrate 2 automatically is placed on first plate 39 (flat part 39b) that is placed on the pedestal 6 from jack-up pin 8.
As shown in Figure 8, if make pedestal 6 rise to the processing substrate position, then, form hollow part 27 by the upper opening portion of the recess 39a that remains on locational second plate of processing substrate 29 coverings first plate 39.This hollow part 27 becomes the exhaust-duct that has with hollow part 27 said functions of first embodiment.In this case, even between the side of plate 7 and treatment chamber side 40, have the gap, also block by second plate 29 that is maintained on the end difference 41 from the stream of the treatment chamber top 1a that leads to this gap.
Like this, according to second embodiment, because plate is made divergence type, form hollow part 27 by the upper opening portion that covers the recess 39a of first plate 39 with second plate 29, so it is same with the situation of the such one-piece type plate of first embodiment with hollow part 27, can make the gas that is fed in the 1a of treatment chamber top from gas discharge outlet 26 to 27 circulations of heart portion, slave plate venting port 28 exhausts, and outside treatment chamber 1, discharge from venting port 5.In addition, particularly in second embodiment, because stream from the treatment chamber top 1a that leads to the side that is formed on plate 7 inevitably and the gap between the treatment chamber side 40, by second plate, 29 blockings that are maintained on the end difference 41, so can prevent when processing substrate to the part of treatment chamber top 1a institute gas supplied, not be discharged to hollow part 27 and be rolled into treatment chamber bottom 1b through above-mentioned gap.
In addition, in the second above-mentioned embodiment, the top integral body of first plate, 39 covering pedestals 6 and the situation that is placed on the pedestal 6 are illustrated, but, as Figure 10 (a) and (b), same with second plate 29, also can be formed for the hole of configuration (taking in) substrate 2 at the central part of first plate 39, make this first plate 39 cover the part (peripheral part) of pedestal 6 and be placed on the pedestal 6 with second plate 29.
But, in the structure of above-mentioned Fig. 7 and Fig. 8 or embodiment shown in Figure 10, the side and the gap between the treatment chamber side 40 that are formed on plate 7 are blocked by second plate 29 that is placed on the end difference 41, prevent that thus gas is rolled into treatment chamber bottom 1b from this gap, but, in this case, can think and also form the gap at second plate 29 itself and between above the end difference 41.That is, as shown in Figure 9, can consider, pedestal 6 is risen, when being covered the upper opening portion of recess 39a of first plate 39 by second plate 29, second plate 29 is by jack-up on first plate 39, formation gap 31 between end difference 41 and second plate 29.It is desirable to, first plate 39 is contacted with second plate 29, but do not form gap 31, but, can think, because the dimensional precision that the hoisting appliance of pedestal 6 and first plate 39 and second plate 29 exist on making, so will form above-mentioned gap 31 inevitably.When the conduction in this gap 31 becomes very important conduction for relief outlet 26, the gas that is fed on the silicon substrate 2 from supplying opening 3,4 flows to hollow part 27 from the relief outlet 26 as gas flow path, on the other hand, also 31 flow to (being involved in) treatment chamber bottom 1b from the gap.
In this case, gap 31 these sides' conduction is diminished though compare with relief outlet 26,, even like this, in the size of reality, for example can prefer relief outlet 26 for about 5mm, gap 31 is about 2mm.In this case, can think, compare, 31 gases that also will discharge very important amount from the gap with relief outlet 26.
About this point, the inventor has following opinion.That is, first plate 39 by conveyance when the processing substrate position, if be placed on second plate 29 on the end difference 41, then between the end difference 41 and second plate 29, will not form gap 31 not by first plate, 39 jack-up.And, the inventor finds, such situation, can isolating form if second plate 29 is made, when first plate 39 is arrived the processing substrate position by conveyance, be placed into a side's of second plate 29 spacer plate on the end difference 41 and keep this state constant, the opposing party's the spacer plate that only makes second plate 29 then can be realized by first plate, 39 jack-up.
Figure 11 is the figure of expression the 3rd embodiment as described above, is not form gap 31 by second plate 29 in second embodiment being made separable structure, making between the end difference 41 and second plate 29, prevents what above-mentioned gas was involved in.Figure 11 is the explanatory view of the major portion of substrate board treatment, wherein, (a) moves into the longitudinal sectional view of the major portion when taking out of for substrate, the longitudinal sectional view of the major portion when (b) being processing substrate.In addition, Figure 14 is the explanatory view of first plate 39, wherein, (a) is stereographic map, (b) is A-A line sectional view, (c) is B-B line sectional view.In addition, Figure 15 is with second plate, 29 isolating stereographic maps.
As shown in figure 11, first plate 39 is with top whole type constitution covering pedestal 6.Shown in Figure 14 (a), first plate 39 has the recess 39a that top is opening in the outside, the flat part 39b of whole circle on the inboard has the covering pedestal.First plate 39 is to be provided with recess 38 with the upper central portion at this flat part 39b, can take in substrate 2 at this recess 38, when being placed into substrate 2 on the recess 38, being in above the peripheral part of the surface of substrate 2 and flat part 39b and going up with one side that such mode constitutes.For with after the interior plate 29d jack-up chatted, and not with outer panel 29c jack-up, for the part of the protuberance of the periphery of flat part 39, the top position of the part of this protuberance is made into the position height than the outer side wall upper end of recess 39a.
In addition, shown in Figure 14 (b), on first plate 39 that is positioned on the A-A line, recess 39a is set at both sides, wherein, is provided with plate venting port 28 in venting port one side of a side opposite with gate valve one side of recess 39a.In addition, shown in Figure 14 (c), on first plate 39 that is positioned on the B-B line, the recess 39a of no plate venting port 28 is set at both sides.
Shown in Figure 11 (a), second plate 29 has interior plate 29d and outer panel 29c, and these parts are constituted as and can separate.Outer panel 29c is placed on the end difference 41.Interior plate 29d is placed on this outer panel 29c.Specifically, as shown in figure 15, second plate 29 have in the form of a ring interior plate 29d with compare with the external diameter of interior plate 29d that external diameter is big, the less 29c of outer panel in the form of a ring of internal diameter.Interior perimembranous at this outer panel 29c has formed the engagement part that is made of end difference, and the portion of being stuck that is made of the end difference that is used for engaging with this engagement part is formed on the peripheral part of interior plate 29d.Interior plate part 29d is placed on the outer panel 29c with outer panel 29 with being concentric circles, and they are partly overlapped.As such structure of overlapping, shown in Figure 11 (a) and Fig. 15, after end difference engaged with each other, lap is thickening not, when being placed into interior plate 29d on the outer panel 29c, can making the surface and the inside that make both and be in a form on the face together.Like this, move under the state of taking out of the position owing to be positioned at substrate at pedestal 6, interior plate 29d is placed on the outer panel 29c, so between the interior plate 29d and outer panel 29c of second plate 29, do not form the gap of the relief outlet of chatting after being used as 26.
Shown in Figure 11 (b), pedestal 6 has been moved under the state of processing substrate position, only interior plate 29d contacts with first plate 39, and outer panel 29c is constituted as with first plate 39 and does not contact.By above-mentioned contact, interior plate 29d is left outer panel 29 by first plate, 39 jack-up, forms the gap between interior plate 29d and outer panel 29c.The relief outlet 26 that is used for being fed into the gas discharge in the 1a of treatment chamber top is formed by this gap.On the other hand, because outer panel 29c do not contact with first plate 39,, do not form the gap so keeping the state that is plugged constant between end difference 41 and the outer panel 29c.
In addition, shown in Figure 11 (b), when interior plate 29d contacts with first plate 39, be covered with the periphery of silicon substrate 2 by interior plate 29d, but this is in order to make interior plate 29d have the desired function that prevents film attached to the silicon substrate periphery in a part of operation of processing substrate operation.
As mentioned above, according to the 3rd embodiment,, can prevent to discharge the gas of very important amount effectively from such gap owing between the end difference 41 and second plate 29, do not form the gap.In addition, seeing as can be known, do not contacting, between the outer panel 29c and first plate 39, forming gap 30 with first plate 39 by outer panel 29c by the position that dotted line enclosed among Figure 11.That is, can think that the gas that is fed into treatment chamber top 1a, is discharged to hollow part 27 from relief outlet 26 is rolled into treatment chamber bottom 1b through this gap 30.But, about this point, can increase by making the port area that is arranged on the plate venting port 28 on first plate 39, the conduction that makes this plate venting port 28 is fully greater than the conduction in gap 30, that is to say the resistance of air-flow is reduced that the gas that suppresses to be discharged to hollow part 27 30 is rolled into treatment chamber bottom 1b from the gap.
At this, if to the structure shown in Figure 11 (b), promptly between the outer panel 29c and first plate 39, form the structure in above-mentioned gap 30 and above-mentioned structure shown in Figure 9, the structure that promptly forms gap 31 between outer panel 29c and end difference 41 compares, then in structure shown in Figure 9, from supplying opening 3,4 be fed into gas on the silicon substrate 2 from the gap 31 and relief outlet 26 these two sides be discharged from.Though compare with relief outlet 26, this sides' conduction of gap 31 is less,, 31 will discharge with relief outlet 26 and compare very important gas from the gap.Relative therewith, in the structure shown in Figure 11 (b), the gas from supplying opening 3,4 is fed on the silicon substrate 2 flows to hollow part 27 from the relief outlet 26 as unique gas flow path.By increase plate venting port 28 in hollow part 27, the conduction that makes plate venting port 28 can suppress gas 30 leakages from the gap fully greater than the conduction in gap 30.At this, even supposition gap 30 is identical size with gap 31, also we can say from the difference of above-mentioned structure, texture ratio shown in Figure 11 (b) structure shown in Figure 9 can prevent that more gas is rolled into treatment chamber bottom 1b from above-mentioned gap, reduce to contact the better effects if of gas area and flow path volume.
In addition, in the 3rd embodiment,, the conduction in gap 30 is reduced in order to suppress gas 30 outflows from the gap.For example, as shown in figure 12, recess is arranged on the back side of plate Outboard Sections 29a, it is chimeric to make this recess not contact the ground, outer side wall upper end of first plate 39.Like this, because gap 30 becomes the labyrinth type structure,, can further suppress gas 30 outflows from the gap so the conduction in gap 30 diminishes.
Like this, according to the 3rd embodiment, because pedestal 6 is risen, when forming hollow part 27 by the recess 39a of second plate, 29 coverings, first plate 39, between the end difference 41 and second plate 29, do not form the gap, so gas disappears through the situation that this gap is rolled into treatment chamber bottom 1b.In addition, because this moment is by the interior routine plate 29d of first plate, 39 jack-up, second plate 29, make between outer panel 29c and interior plate 29d, to have formed the gap that treatment chamber bottom 1a and hollow part 27 are connected, so can guarantee in the hollow part 27 of plate 7, to discharge the relief outlet 26 of gas from treatment chamber top 1a.
In addition, also the 3rd embodiment can be carried out all distortion.For example, in the 3rd embodiment, the relief outlet 26 that is formed by interior plate 29d that constitutes second plate 29 and outer panel 29c has the function of the conduction adjustment that is used to make the air-flow homogenizing on the silicon substrate 2.But, since according to filming condition under the less situation of the influence that is adsorbed as main body, air-flow on the silicon substrate 2, do not need the adjustment of conducting, so, also can adopt the form of the outer panel 29c that has only first plate 39 and second plate 29.
In addition, in the 3rd embodiment, the situation by the part of second plate, 29 covered substrates 2 is illustrated, still, also can second plate, 29 covered substrates 2.Under need not the situation of second plate, 29 covered substrates 2, form first plate 39 of hollow part 27 and the separated part between second plate 29 and can carry out all distortion.Such distortion as shown in figure 13.
In the plate shown in Figure 13 (a) structure,, added the suitable part of interior plate with second plate of a part that is used to cover its recess 39a first plate, 39 these sides.Second plate, 29 these sides have removed the part that is equivalent to interior plate, only are made of the part suitable with the outer panel of the remainder that is used to cover recess 39a.In the structure shown in Figure 13 (b),, removed the outside that constitutes recess 39a and erected part though added the part suitable with the interior plate of second plate first plate, 39 these sides.Second plate, 29 these sides though removed the part that is equivalent to interior plate, have added with the outside rising portions that constitutes recess 39a and have divided suitable part.
According to these variation, owing to change separated part between first plate and second plate, increased and the suitable part of interior plate that is used to cover recess this side of first plate, so, second plate can be only by be maintained at usually on the end difference 41, with constitute without the suitable part of the outer panel of action, second plate is simplified.
In addition, in above-mentioned first embodiment and even the 3rd embodiment, all adopted the radial flow ejector half of shower nozzle to be illustrated for the supplying opening of supply gas in treatment chamber, still, gas supply method of the present invention is not limited to this.For example, also go for folk prescription to flow model.
At this, described folk prescription is meant to flow model, from the gas supply port of the side that is arranged on substrate, for real estate on parallel direction supply gas, gas folk prescription on substrate is flowed, from being arranged on the venting port deflated type of an opposite side with gas supply port to ground.
Figure 16 is used for the longitudinal sectional view of folk prescription as described above when the processing substrate that the one chip substrate board treatment based on the 4th embodiment of flow model describes.Owing to be identical basically, so identical position has added identical symbol and omitted explanation with the structure of the 3rd embodiment shown in Figure 8.Difference is, with supplying opening 3,4 be arranged to be positioned at substrate 2 the side and with compare the space that is in the top with plate 7 and be communicated with, and constitute can be to substrate 2 supply gas.
As shown in the figure, gas supply port 3,4 need not press from both sides establishes shower plate, but directly is attached at substrate transferring mouth 10 1 sides of the treatment chamber 1 of upper container 46, can slave plate 7 in treatment chamber 1 supply gas.Flow into the gas of comparing the treatment chamber top 1a that is positioned at the top with the plate 7 in the treatment chamber 1 from gas supply port 3,4, run into second plate 29, be changed the progressive path, a part wherein is discharged in the hollow part 27 from the relief outlet 26 of upstream one side, carry out circumferential flow at hollow part 27, slave plate venting port 28 is discharged into venting port 5.Rest parts along second plate 29 on substrate 2 downstream relief outlet 26 folk prescriptions of an example flow to ground, be discharged in the hollow part 27 from relief outlet 26, slave plate venting port 28 is discharged into venting port 5.
If the present invention is applicable to the substrate board treatment with supplying opening of folk prescription as described above to flow model, because can directly supply gas in the treatment chamber, so, compare with situation about supplying with via shower plate, entrap bubble can be promptly discharged, therefore purification efficiency can be further improved.

Claims (20)

1. substrate board treatment has:
Be used for treatment chamber that substrate is handled;
Be set on the above-mentioned treatment chamber side and with aforesaid substrate with respect to the substrate transferring mouth of moving in the treatment chamber, taking out of;
The maintaining body that liftably is arranged in the above-mentioned treatment chamber, aforesaid substrate is kept;
Compare with above-mentioned maintaining body and to be set at the top, the supplying opening of supply gas in above-mentioned treatment chamber;
Be set at above-mentioned maintaining body around, be used to discharge the exhaust-duct that supplies to the gas in the above-mentioned treatment chamber;
Compare above the above-mentioned exhaust-duct during with processing substrate and be set at the below, be used for and will pass through the venting port that above-mentioned exhaust-duct expellant gas is discharged outside above-mentioned treatment chamber,
Wherein, be constituted as can lifting at least a portion that constitutes the parts of above-mentioned exhaust-duct.
2. substrate board treatment according to claim 1 is characterized in that, at least a portion that constitutes the parts of above-mentioned exhaust-duct is constituted as and can carries out lifting with above-mentioned maintaining body in linkage with above-mentioned maintaining body.
3. substrate board treatment according to claim 1 is characterized in that, at least a portion that constitutes the parts of above-mentioned exhaust-duct is placed on the above-mentioned maintaining body, and is constituted as and can carries out lifting with above-mentioned maintaining body.
4. substrate board treatment according to claim 1, it is characterized in that, constitute at least a portion of the parts of above-mentioned exhaust-duct, move at substrate and to be configured in when taking out of and the not relative position of aforesaid substrate conveyance mouth, when aforesaid substrate is handled, be configured in the relative position of at least a portion with aforesaid substrate conveyance mouth.
5. substrate board treatment according to claim 1 is characterized in that above-mentioned exhaust-duct is set at the side of above-mentioned maintaining body.
6. substrate board treatment according to claim 1 is characterized in that, above-mentioned exhaust-duct is configured to block the gap between above-mentioned treatment chamber side and the above-mentioned maintaining body side.
7. substrate board treatment according to claim 1, it is characterized in that, above-mentioned exhaust-duct is made of the plate with the hollow part that is communicated with above-mentioned treatment chamber, and is placed on the above-mentioned maintaining body, makes the part of above-mentioned plate cover at least a portion above the above-mentioned maintaining body.
8. substrate board treatment according to claim 7 is characterized in that, above-mentioned hollow part is set between above-mentioned treatment chamber side and the above-mentioned maintaining body side.
9. substrate board treatment according to claim 1, it is characterized in that, above-mentioned exhaust-duct is made of the plate with the hollow part that is communicated with above-mentioned treatment chamber, and above-mentioned plate is made of second plate of first plate with recess and the above-mentioned recess of covering, and these plates are configured to and can separate.
10. substrate board treatment according to claim 9 is characterized in that, above-mentioned first plate is configured to can lifting, and above-mentioned second plate is maintained at the processing substrate position.
11. substrate board treatment according to claim 10 is characterized in that, above-mentioned second plate has interior plate and outer panel, and above-mentioned interior plate is placed on the above-mentioned outer panel.
12. substrate board treatment according to claim 11 is characterized in that, aforesaid substrate is moved under the state of processing substrate position, only above-mentioned interior plate contacts with above-mentioned first plate, and above-mentioned outer panel does not contact with above-mentioned first plate.
13. substrate board treatment according to claim 12, it is characterized in that, be used in the hollow part of above-mentioned plate, discharging the relief outlet of gas, by handling the gap that between above-mentioned interior plate and above-mentioned outer panel, forms under the state of position and form making aforesaid substrate move to aforesaid substrate from above-mentioned treatment chamber.
14. substrate board treatment according to claim 1, it is characterized in that, described substrate board treatment also has controlling organization, control by above-mentioned controlling organization, alternately supply with two or more reactant gasess from above-mentioned supplying opening repeatedly, and alternately supply with above-mentioned two or more reactant gases between, the supply of inserting Purge gas.
15. the manufacture method of a semiconductor device is characterized in that, has:
The operation that substrate is moved in treatment chamber;
By maintaining body is risen, be placed on operation on the above-mentioned maintaining body with moving into aforesaid substrate in the above-mentioned treatment chamber;
To being placed on the aforesaid substrate supply gas on the above-mentioned maintaining body, and discharge gas by the exhaust-duct on every side that is arranged on above-mentioned maintaining body, and will by above-mentioned exhaust-duct expellant gas by with compare the venting port that is set at the below above the above-mentioned exhaust-duct and be discharged to outside the above-mentioned treatment chamber operation that aforesaid substrate is handled thus;
By above-mentioned maintaining body is descended, make aforesaid substrate after the processing become the operation of the state that can be taken out of;
The operation that aforesaid substrate after handling is taken out of from above-mentioned treatment chamber,
In the operation that makes above-mentioned maintaining body rise, descend, at least a portion that constitutes the parts of above-mentioned exhaust-duct rises, descends with above-mentioned maintaining body.
16. the manufacture method of semiconductor device according to claim 15, it is characterized in that, in the aforesaid substrate treatment process, aforesaid substrate is alternately supplied with two or more reactant gasess repeatedly, and alternately supplying with between the above-mentioned two or more reactant gases, insert the supply of Purge gas.
17. the manufacture method of semiconductor device according to claim 15, it is characterized in that, the aforesaid substrate treatment process comprises: make at least a reactant gases be adsorbed on operation on the aforesaid substrate, with respect to adsorbed reactant gases, supply with different with it reactant gasess to produce the operation of film formation reaction.
18. the manufacture method of semiconductor device according to claim 15 is characterized in that, the aforesaid substrate treatment process comprises the following operation of repeatedly carrying out repeatedly: aforesaid substrate is supplied with first reactant gases and make it to be adsorbed on operation on the aforesaid substrate; After this operation that purifies; After this with respect to first reactant gases that is adsorbed on the aforesaid substrate, supply with second reactant gases to produce the operation of film formation reaction; After this operation that purifies.
19. the manufacture method of semiconductor device according to claim 15 is characterized in that, the aforesaid substrate treatment process comprises following operation: at least a reactant gases is decomposed, make the operation of film stack on aforesaid substrate; The membrane supplying reactant gases different with above-mentioned reactant gases piled up carried out the operation of the upgrading of above-mentioned film.
20. the manufacture method of semiconductor device according to claim 15 is characterized in that, the aforesaid substrate treatment process comprises the following operation of repeatedly carrying out repeatedly: aforesaid substrate is supplied with first reactant gases and made the operation of film stack on aforesaid substrate; After this operation that purifies; After this to membrane supplying second reactant gases on aforesaid substrate, piled up and carry out the operation of the upgrading of above-mentioned film; After this operation that purifies.
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