TWI907412B - 用於週期性偏移之一維測量之計量目標、疊對計量系統及方法 - Google Patents

用於週期性偏移之一維測量之計量目標、疊對計量系統及方法

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Publication number
TWI907412B
TWI907412B TW110113174A TW110113174A TWI907412B TW I907412 B TWI907412 B TW I907412B TW 110113174 A TW110113174 A TW 110113174A TW 110113174 A TW110113174 A TW 110113174A TW I907412 B TWI907412 B TW I907412B
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TW
Taiwan
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work
area
working
areas
measurement
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TW110113174A
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English (en)
Chinese (zh)
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TW202212773A (zh
Inventor
尤爾 斐勒
馬克 吉納渥克
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美商科磊股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70681Metrology strategies
    • G03F7/70683Mark designs
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/26Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW110113174A 2020-06-04 2021-04-13 用於週期性偏移之一維測量之計量目標、疊對計量系統及方法 TWI907412B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063034414P 2020-06-04 2020-06-04
US63/034,414 2020-06-04
US17/098,835 2020-11-16
US17/098,835 US11686576B2 (en) 2020-06-04 2020-11-16 Metrology target for one-dimensional measurement of periodic misregistration

Publications (2)

Publication Number Publication Date
TW202212773A TW202212773A (zh) 2022-04-01
TWI907412B true TWI907412B (zh) 2025-12-11

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TW110113174A TWI907412B (zh) 2020-06-04 2021-04-13 用於週期性偏移之一維測量之計量目標、疊對計量系統及方法

Country Status (7)

Country Link
US (2) US11686576B2 (https=)
EP (1) EP4150405A4 (https=)
JP (2) JP2023528464A (https=)
KR (1) KR20230019863A (https=)
CN (1) CN115917435A (https=)
TW (1) TWI907412B (https=)
WO (1) WO2021247384A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102580204B1 (ko) 2023-03-02 2023-09-19 (주)오로스 테크놀로지 1차원 오버레이 오차 측정을 위한 오버레이 마크, 이를 이용한 광학 수차 평가 방법, 이를 이용한 오버레이 마크 품질 평가 방법, 오버레이 측정 장치, 오버레이 측정 방법 및 반도체 소자의 제조방법
KR102923174B1 (ko) 2023-04-10 2026-02-06 (주)오로스테크놀로지 광 결정 층을 구비하는 오버레이 마크, 이를 이용한 오버레이 측정 방법, 측정 장치 및 반도체 소자의 제조방법, 광 결정 층을 최적화하는 방법
KR102875280B1 (ko) 2023-07-03 2025-10-23 (주) 오로스테크놀로지 오버레이 마크 및 이를 이용한 오버레이 측정 장치, 오버레이 측정 방법 및 반도체 소자의 제조방법

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Also Published As

Publication number Publication date
EP4150405A4 (en) 2024-08-14
CN115917435A (zh) 2023-04-04
WO2021247384A1 (en) 2021-12-09
JP2026041836A (ja) 2026-03-10
US20210381825A1 (en) 2021-12-09
EP4150405A1 (en) 2023-03-22
JP2023528464A (ja) 2023-07-04
KR20230019863A (ko) 2023-02-09
US11686576B2 (en) 2023-06-27
TW202212773A (zh) 2022-04-01
US20240035812A1 (en) 2024-02-01

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