TWI856307B - 記憶體裝置與其製造方法 - Google Patents

記憶體裝置與其製造方法 Download PDF

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Publication number
TWI856307B
TWI856307B TW111114136A TW111114136A TWI856307B TW I856307 B TWI856307 B TW I856307B TW 111114136 A TW111114136 A TW 111114136A TW 111114136 A TW111114136 A TW 111114136A TW I856307 B TWI856307 B TW I856307B
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TW
Taiwan
Prior art keywords
manufacturing
methods
memory devices
memory
devices
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TW111114136A
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English (en)
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TW202335246A (zh
Inventor
林孟漢
黃家恩
Original Assignee
台灣積體電路製造股份有限公司
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Priority claimed from US17/672,597 external-priority patent/US20230262977A1/en
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202335246A publication Critical patent/TW202335246A/zh
Application granted granted Critical
Publication of TWI856307B publication Critical patent/TWI856307B/zh

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TW111114136A 2022-02-15 2022-04-13 記憶體裝置與其製造方法 TWI856307B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/672,597 US20230262977A1 (en) 2022-02-15 2022-02-15 Memory devices and methods of manufacturing thereof
US17/672,597 2022-02-15

Publications (2)

Publication Number Publication Date
TW202335246A TW202335246A (zh) 2023-09-01
TWI856307B true TWI856307B (zh) 2024-09-21

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200091189A1 (en) 2016-06-22 2020-03-19 Samsung Electronics Co., Ltd. Memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200091189A1 (en) 2016-06-22 2020-03-19 Samsung Electronics Co., Ltd. Memory device

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