TWI848870B - Tic-tac-toe shaped device for stripping die and method for the same - Google Patents
Tic-tac-toe shaped device for stripping die and method for the same Download PDFInfo
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本發明是涉及一種晶粒剝離裝置及方法,尤其是一種井字形晶粒剝離裝置及方法。The present invention relates to a device and method for chip stripping, and in particular to a chip stripping device and method for chip stripping in a tic-tac-toe pattern.
晶圓被切割成複數個晶粒以後,該等晶粒將會從承載膜被轉移到基板上。在轉移的過程中,首先,支撐裝置支撐承載膜的晶粒放置區;接著,在理想狀態之下,複數個頂推件從支撐裝置的內部上升至支撐裝置的外部並且透過承載膜的晶粒放置區推動目標晶粒上升,使得目標晶粒的周邊與承載膜的晶粒放置區的周邊分離,且目標晶粒的中心與承載膜的晶粒放置區的中心分離;在目標晶粒上升的過程中,目標晶粒接觸到固晶裝置,固晶裝置吸取目標晶粒;最後,該等頂推件下降至支撐裝置的內部,同時固晶裝置將目標晶粒移動至基板上。After the wafer is cut into multiple dies, the dies will be transferred from the carrier film to the substrate. During the transfer process, first, the support device supports the die placement area of the carrier film; then, under ideal conditions, multiple pushers rise from the inside of the support device to the outside of the support device and push the target die up through the die placement area of the carrier film, so that the periphery of the target die is separated from the periphery of the die placement area of the carrier film, and the center of the target die is separated from the center of the die placement area of the carrier film; during the rise of the target die, the target die contacts the die bonding device, and the die bonding device absorbs the target die; finally, the pushers descend to the inside of the support device, and the die bonding device moves the target die to the substrate.
然而,當該等頂推件透過承載膜的晶粒放置區推動目標晶粒上升時,該等頂推件的頂端較為尖銳,應力容易過度集中,導致目標晶粒破損或承載膜破損且殘留在目標晶粒的表面。However, when the pushers push the target die up through the die placement area of the carrier film, the top of the pushers is sharp and the stress is easily over-concentrated, resulting in damage to the target die or damage to the carrier film and residues on the surface of the target die.
本發明的主要目的在於提供一種井字形晶粒剝離裝置及方法,能夠以較緩和的方式將目標晶粒與承載膜的晶粒放置區分離。The main purpose of the present invention is to provide a tic-tac-toe die stripping device and method, which can separate the target die from the die placement area of the carrier film in a gentle manner.
為了達成前述的目的,本發明提供一種井字形晶粒剝離裝置,包括一底座、一第一導引裝置、一第二導引裝置、一滑動裝置、一調節裝置以及一真空裝置。該底座具有一通道。該第一導引裝置設置於該底座上。該第二導引裝置設置於該底座上。該滑動裝置設置於該第一導引裝置上。該調節裝置設置於該第二導引裝置上。該真空裝置連接該通道。In order to achieve the above-mentioned purpose, the present invention provides a tic-tac-toe-shaped die stripping device, comprising a base, a first guide device, a second guide device, a sliding device, an adjusting device and a vacuum device. The base has a channel. The first guide device is arranged on the base. The second guide device is arranged on the base. The sliding device is arranged on the first guide device. The adjusting device is arranged on the second guide device. The vacuum device is connected to the channel.
其中,該第一導引裝置控制該滑動裝置移動,且該第二導引裝置控制該調節裝置移動,使得該滑動裝置與該調節裝置之間形成一第一縫隙,該第一縫隙對齊一承載膜的一晶粒放置區上的一目標晶粒,且可依據該目標晶粒的長度和寬度調整該第一縫隙的長度和寬度。Among them, the first guiding device controls the movement of the sliding device, and the second guiding device controls the movement of the adjusting device, so that a first gap is formed between the sliding device and the adjusting device, and the first gap is aligned with a target grain on a grain placement area of a supporting film, and the length and width of the first gap can be adjusted according to the length and width of the target grain.
其中,該第一導引裝置進一步控制該滑動裝置移動,且該第二導引裝置進一步控制該調節裝置移動,使得該滑動裝置與該調節裝置互相靠近並且封閉該第一縫隙。The first guide device further controls the movement of the sliding device, and the second guide device further controls the movement of the adjusting device, so that the sliding device and the adjusting device are close to each other and close the first gap.
其中,該第一導引裝置進一步控制該滑動裝置移動並且逐漸遠離該目標晶粒,且該第二導引裝置控制該調節裝置固定不動,使得該滑動裝置與該調節裝置之間形成一第二縫隙,且該第二縫隙逐漸變大;該通道與該第二縫隙相通,該真空裝置對該通道抽氣以產生真空並且提供一負壓,該負壓依序通過該通道與該第二縫隙以吸附該承載膜的該晶粒放置區,該承載膜的該晶粒放置區逐漸彎折並且進入該第二縫隙中,使得該目標晶粒逐漸脫離該承載膜的該晶粒放置區。Among them, the first guiding device further controls the sliding device to move and gradually move away from the target grain, and the second guiding device controls the adjusting device to be fixed, so that a second gap is formed between the sliding device and the adjusting device, and the second gap gradually becomes larger; the channel is connected to the second gap, and the vacuum device evacuates the channel to generate a vacuum and provide a negative pressure. The negative pressure passes through the channel and the second gap in sequence to absorb the grain placement area of the supporting film. The grain placement area of the supporting film gradually bends and enters the second gap, so that the target grain gradually leaves the grain placement area of the supporting film.
在一些實施例中,該滑動裝置包括一第一滑塊及一第二滑塊,該調節裝置包括一第一調節塊及一第二調節塊;其中,該第一導引裝置控制該第一滑塊與該第二滑塊移動,且該第二導引裝置控制該第一調節塊與該第二調節塊移動,使得該第一滑塊、該第二滑塊、該第一調節塊與該第二調節塊之間形成該第一縫隙;其中,該第一導引裝置進一步控制該第一滑塊與該第二滑塊移動,且該第二導引裝置進一步控制該第一調節塊與該第二調節塊移動,使得該第一滑塊、該第二滑塊、該第一調節塊與該第二調節塊互相靠近並且封閉該第一縫隙;其中,該第一導引裝置進一步控制該第一滑塊與該第二滑塊移動,使得該第二滑塊逐漸遠離該目標晶粒,且該第二導引裝置控制該第一調節塊與該第二調節塊固定不動,使得該第一滑塊、該第二滑塊、該第一調節塊與該第二調節塊之間形成該第二縫隙。In some embodiments, the sliding device includes a first slider and a second slider, and the adjusting device includes a first adjusting block and a second adjusting block; wherein the first guiding device controls the movement of the first slider and the second slider, and the second guiding device controls the movement of the first adjusting block and the second adjusting block, so that the first gap is formed between the first slider, the second slider, and the first adjusting block and the second adjusting block; wherein the first guiding device further controls the movement of the first slider and the second slider, and the second guiding device controls the movement of the first adjusting block and the second adjusting block. The device further controls the movement of the first adjusting block and the second adjusting block, so that the first slider, the second slider, the first adjusting block and the second adjusting block are close to each other and the first gap is closed; wherein the first guiding device further controls the movement of the first slider and the second slider, so that the second slider gradually moves away from the target grain, and the second guiding device controls the first adjusting block and the second adjusting block to be fixed, so that the second gap is formed between the first slider, the second slider, the first adjusting block and the second adjusting block.
在一些實施例中,該目標晶粒的長度小於或等於該第一縫隙的長度,且該目標晶粒的寬度小於或等於該第一縫隙的寬度。In some embodiments, the length of the target die is less than or equal to the length of the first slit, and the width of the target die is less than or equal to the width of the first slit.
在一些實施例中,該目標晶粒的寬度小於或等於該第二縫隙的寬度,且該第二縫隙的長度逐漸變大。In some embodiments, the width of the target grain is less than or equal to the width of the second slit, and the length of the second slit gradually increases.
為了達成前述的目的,本發明提供一種井字形晶粒剝離方法,包括下列步驟:(a)一第一導引裝置控制一滑動裝置移動,且一第二導引裝置控制一調節裝置移動,使得該滑動裝置與該調節裝置之間形成一第一縫隙,該第一縫隙對齊一承載膜的一晶粒放置區上的一目標晶粒,且可依據該目標晶粒的長度和寬度調整該第一縫隙的長度和寬度;(b)該第一導引裝置進一步控制該滑動裝置移動,且該第二導引裝置進一步控制該調節裝置移動,使得該滑動裝置與該調節裝置互相靠近並且封閉該第一縫隙;以及(c)該第一導引裝置進一步控制該滑動裝置移動並且逐漸遠離該目標晶粒,且該第二導引裝置控制該調節裝置固定不動,使得該滑動裝置與該調節裝置之間形成一第二縫隙,且該第二縫隙逐漸變大;一底座的一通道與該第二縫隙相通,一真空裝置對該通道抽氣以產生真空並且提供一負壓,該負壓依序通過該通道與該第二縫隙以吸附該承載膜的該晶粒放置區,該承載膜的該晶粒放置區逐漸彎折並且進入該第二縫隙中,使得該目標晶粒逐漸脫離該承載膜的該晶粒放置區。In order to achieve the above-mentioned purpose, the present invention provides a tic-tac-toe grain stripping method, comprising the following steps: (a) a first guide device controls the movement of a sliding device, and a second guide device controls the movement of an adjusting device, so that a first gap is formed between the sliding device and the adjusting device, the first gap is aligned with a target grain on a grain placement area of a carrier film, and the length and width of the first gap can be adjusted according to the length and width of the target grain; (b) the first guide device further controls the movement of the sliding device, and the second guide device further controls the movement of the adjusting device, so that the sliding device and the adjusting device are close to each other and closed. The first gap; and (c) the first guiding device further controls the sliding device to move and gradually move away from the target grain, and the second guiding device controls the adjusting device to be fixed, so that a second gap is formed between the sliding device and the adjusting device, and the second gap gradually becomes larger; a channel of a base is connected to the second gap, a vacuum device evacuates the channel to generate a vacuum and provides a negative pressure, the negative pressure passes through the channel and the second gap in sequence to absorb the grain placement area of the carrier film, the grain placement area of the carrier film gradually bends and enters the second gap, so that the target grain gradually leaves the grain placement area of the carrier film.
在一些實施例中,步驟(a)進一步包括:該第一導引裝置控制該滑動裝置的一第一滑塊與一第二滑塊移動,且該第二導引裝置控制該調節裝置的一第一調節塊與一第二調節塊移動,使得該第一滑塊、該第二滑塊、該第一調節塊與該第二調節塊之間形成該第一縫隙;其中,步驟(b)進一步包括:該第一導引裝置進一步控制該第一滑塊與該第二滑塊移動,且該第二導引裝置進一步控制該第一調節塊與該第二調節塊移動,使得該第一滑塊、該第二滑塊、該第一調節塊與該第二調節塊互相靠近並且封閉該第一縫隙;其中,步驟(c)進一步包括:該第一導引裝置進一步控制該第一滑塊與該第二滑塊移動,使得該第二滑塊逐漸遠離該目標晶粒,且該第二導引裝置控制該第一調節塊與該第二調節塊固定不動,使得該第一滑塊、該第二滑塊、該第一調節塊與該第二調節塊之間形成該第二縫隙。In some embodiments, step (a) further includes: the first guide device controls a first slider and a second slider of the sliding device to move, and the second guide device controls a first adjusting block and a second adjusting block of the adjusting device to move, so that the first slider, the second slider, and the first adjusting block and the second adjusting block form the first gap; wherein, step (b) further includes: the first guide device further controls the first slider and the second slider to move, and the second guide device further controls the first adjusting block to move. The node block and the second adjusting block move so that the first slider, the second slider, the first adjusting block and the second adjusting block approach each other and close the first gap; wherein, step (c) further includes: the first guiding device further controls the first slider and the second slider to move so that the second slider gradually moves away from the target grain, and the second guiding device controls the first adjusting block and the second adjusting block to be fixed so that the second gap is formed between the first slider, the second slider, the first adjusting block and the second adjusting block.
在一些實施例中,步驟(a)進一步包括:該目標晶粒的長度小於或等於該第一縫隙的長度,且該目標晶粒的寬度小於或等於該第一縫隙的寬度。In some embodiments, step (a) further includes: the length of the target grain is less than or equal to the length of the first slit, and the width of the target grain is less than or equal to the width of the first slit.
在一些實施例中,步驟(c)進一步包括:該目標晶粒的寬度小於或等於該第二縫隙的寬度,且該第二縫隙的長度逐漸變大。In some embodiments, step (c) further includes: the width of the target grain is less than or equal to the width of the second slit, and the length of the second slit gradually increases.
本發明的功效在於,本發明能夠先藉由滑動裝置和調節裝置控制第一縫隙的尺寸以對應不同尺寸的目標晶粒,再藉由滑動裝置和調節裝置控制第二縫隙的尺寸並且配合負壓以較緩和的方式將目標晶粒與承載膜的晶粒放置區分離,不會有應力集中的問題,避免目標晶粒破損或承載膜的晶粒放置區破損且殘留在目標晶粒的表面。The effectiveness of the present invention lies in that the present invention can first control the size of the first gap by means of a sliding device and an adjusting device to correspond to target grains of different sizes, and then control the size of the second gap by means of a sliding device and an adjusting device and cooperate with negative pressure to separate the target grain from the grain placement area of the carrier film in a more gentle manner without the problem of stress concentration, thereby avoiding damage to the target grain or damage to the grain placement area of the carrier film and residues remaining on the surface of the target grain.
以下配合圖式及元件符號對本發明的實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。The following is a more detailed description of the implementation of the present invention with reference to the drawings and component symbols, so that those skilled in the art can implement the present invention accordingly after reading this specification.
圖1A是本發明的裝置的立體圖。圖1B是本發明的真空裝置60與通道11的連接關係的示意圖。如圖1A及圖1B所示,本發明提供一種井字形晶粒剝離裝置,包括一底座10、一第一導引裝置20、一第二導引裝置30、一滑動裝置40、一調節裝置50以及一真空裝置60。底座10具有一通道11,第一導引裝置20與第二導引裝置30設置於底座10上。滑動裝置40設置於第一導引裝置20上並且包括一第一滑塊41及一第二滑塊42。調節裝置50設置於第二導引裝置30上並且包括一第一調節塊51及一第二調節塊52。真空裝置60連接通道11。FIG. 1A is a three-dimensional diagram of the device of the present invention. FIG. 1B is a schematic diagram of the connection relationship between the
圖2是本發明的方法的流程圖。圖3是本發明的方法的步驟S10的俯視圖。圖4是圖3的線IV-IV的剖面圖。圖5是圖3的線V-V的剖面圖。圖6至9是本發明的方法的步驟S10依據目標晶粒90的長度和寬度調整第一縫隙71的長度和寬度的俯視圖。圖10是本發明的方法的步驟S20的俯視圖。圖11是圖10的線XI-XI的剖面圖。圖12是本發明的方法的步驟S30的目標晶粒90開始脫離承載膜80的俯視圖。圖13是圖12的線XIII-XIII的剖面圖。圖14是本發明的方法的步驟S30的目標晶粒90持續脫離承載膜80的俯視圖。圖15是圖14的線XV-XV的剖面圖。圖16是本發明的方法的步驟S30的目標晶粒90完全脫離承載膜80的俯視圖。圖17是圖16的線XVII-XVII的剖面圖。本發明提供一種井字形晶粒剝離方法,包括下列步驟:Fig. 2 is a flow chart of the method of the present invention. Fig. 3 is a top view of step S10 of the method of the present invention. Fig. 4 is a cross-sectional view taken along line IV-IV of Fig. 3. Fig. 5 is a cross-sectional view taken along line V-V of Fig. 3. Figs. 6 to 9 are top views of step S10 of the method of the present invention, in which the length and width of the
步驟S10,如圖2至圖9所示,第一導引裝置20控制滑動裝置40的第一滑塊41與第二滑塊42移動,且第二導引裝置30控制調節裝置50的第一調節塊51與第二調節塊52移動,使得第一滑塊41、第二滑塊42、第一調節塊51與第二調節塊52之間形成一第一縫隙71,第一縫隙71對齊一承載膜80的一晶粒放置區81上的一目標晶粒90,且可依據目標晶粒90的長度和寬度調整第一縫隙71的長度和寬度。In step S10, as shown in FIGS. 2 to 9 , the
步驟S20,如圖2、圖10及圖11所示,第一導引裝置20進一步控制滑動裝置40的第一滑塊41與第二滑塊42移動,且第二導引裝置30進一步控制調節裝置50的第一調節塊51與第二調節塊52移動,使得第一滑塊41、第二滑塊42、第一調節塊51與第二調節塊52互相靠近並且封閉第一縫隙71。In step S20, as shown in FIGS. 2 , 10 and 11 , the
步驟S30,如圖2、圖12至圖17所示,第一導引裝置20進一步控制滑動裝置40的第一滑塊41與第二滑塊42移動,使得第二滑塊42逐漸遠離目標晶粒90,且第二導引裝置30控制調節裝置50的第一調節塊51與第二調節塊52固定不動,使得第一滑塊41、第二滑塊42、第一調節塊51與第二調節塊52之間形成一第二縫隙72,且第二縫隙72逐漸變大;通道11與第二縫隙72相通,真空裝置60對通道11抽氣以產生真空並且提供一負壓61,負壓61依序通過通道11與第二縫隙72以吸附承載膜80的晶粒放置區81,承載膜80的晶粒放置區81逐漸彎折並且進入第二縫隙72中,使得目標晶粒90逐漸脫離承載膜80的晶粒放置區81。In step S30, as shown in FIG. 2 and FIG. 12 to FIG. 17, the
較佳地,步驟S10進一步包括:目標晶粒90的長度小於或等於第一縫隙71的長度,且目標晶粒90的寬度小於或等於第一縫隙71的寬度。Preferably, step S10 further includes: the length of the
較佳地,步驟S30進一步包括:目標晶粒90的寬度小於或等於第二縫隙72的寬度,且第二縫隙72的長度逐漸變大。藉此,負壓61通過第二縫隙72吸附承載膜的晶粒放置區81,承載膜80的晶粒放置區81逐漸彎折並且進入第二縫隙72中,使得目標晶粒90逐漸脫離承載膜80的晶粒放置區81。Preferably, step S30 further includes: the width of the
綜上所述,本發明能夠先藉由滑動裝置40和調節裝置50控制第一縫隙71的尺寸以對應不同尺寸的目標晶粒90,再藉由滑動裝置40和調節裝置50控制第二縫隙72的尺寸並且配合負壓61以較緩和的方式將目標晶粒90與承載膜80的晶粒放置區81分離,不會有應力集中的問題,避免目標晶粒90破損或承載膜80的晶粒放置區81破損且殘留在目標晶粒90的表面。In summary, the present invention can first control the size of the
以上所述者僅為用以解釋本發明的較佳實施例,並非企圖據以對本發明做任何形式上的限制,是以,凡有在相同的發明精神下所作有關本發明的任何修飾或變更,皆仍應包括在本發明意圖保護的範疇。The above is only used to explain the preferred embodiments of the present invention, and is not intended to limit the present invention in any form. Therefore, any modifications or changes made to the present invention under the same spirit of the invention should still be included in the scope of protection of the present invention.
10:底座 11:通道 20:第一導引裝置 30:第二導引裝置 40:滑動裝置 41:第一滑塊 42:第二滑塊 50:調節裝置 51:第一調節塊 52:第二調節塊 60:真空裝置 61:負壓 71:第一縫隙 72:第二縫隙 80:承載膜 81:晶粒放置區 90:目標晶粒 S10~S30:步驟 10: base 11: channel 20: first guide device 30: second guide device 40: sliding device 41: first slider 42: second slider 50: adjusting device 51: first adjusting block 52: second adjusting block 60: vacuum device 61: negative pressure 71: first gap 72: second gap 80: carrier film 81: die placement area 90: target die S10~S30: steps
圖1A是本發明的裝置的立體圖。 圖1B是本發明的真空裝置與通道的連接關係的示意圖。 圖2是本發明的方法的流程圖。 圖3是本發明的方法的步驟S10的俯視圖。 圖4是圖3的線IV-IV的剖面圖。 圖5是圖3的線V-V的剖面圖。 圖6至9是本發明的方法的步驟S10依據目標晶粒的長度和寬度調整第一縫隙的長度和寬度的俯視圖。 圖10是本發明的方法的步驟S20的俯視圖。 圖11是圖10的線XI-XI的剖面圖。 圖12是本發明的方法的步驟S30的目標晶粒開始脫離承載膜的俯視圖。 圖13是圖12的線XIII-XIII的剖面圖。 圖14是本發明的方法的步驟S30的目標晶粒持續脫離承載膜的俯視圖。 圖15是圖14的線XV-XV的剖面圖。 圖16是本發明的方法的步驟S30的目標晶粒完全脫離承載膜的俯視圖。 圖17是圖16的線XVII-XVII的剖面圖。 FIG. 1A is a three-dimensional diagram of the device of the present invention. FIG. 1B is a schematic diagram of the connection relationship between the vacuum device of the present invention and the channel. FIG. 2 is a flow chart of the method of the present invention. FIG. 3 is a top view of step S10 of the method of the present invention. FIG. 4 is a cross-sectional view of line IV-IV of FIG. 3. FIG. 5 is a cross-sectional view of line V-V of FIG. 3. FIG. 6 to 9 are top views of step S10 of the method of the present invention, in which the length and width of the first slit are adjusted according to the length and width of the target grain. FIG. 10 is a top view of step S20 of the method of the present invention. FIG. 11 is a cross-sectional view of line XI-XI of FIG. 10. FIG. 12 is a top view of step S30 of the method of the present invention, in which the target grain begins to detach from the carrier film. FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG. 12 . FIG. 14 is a top view of the target grains of step S30 of the method of the present invention continuously detaching from the carrier film. FIG. 15 is a cross-sectional view taken along line XV-XV of FIG. 14 . FIG. 16 is a top view of the target grains of step S30 of the method of the present invention completely detaching from the carrier film. FIG. 17 is a cross-sectional view taken along line XVII-XVII of FIG. 16 .
10:底座 10: Base
20:第一導引裝置 20: First guide device
30:第二導引裝置 30: Second guiding device
40:滑動裝置 40: Sliding device
41:第一滑塊 41: First slider
42:第二滑塊 42: Second slider
50:調節裝置 50: Adjustment device
51:第一調節塊 51: First adjustment block
52:第二調節塊 52: Second adjustment block
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Citations (2)
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TW201442874A (en) * | 2013-03-26 | 2014-11-16 | Samsung Display Co Ltd | Delamination apparatus |
TW201838056A (en) * | 2017-03-31 | 2018-10-16 | 日月光半導體製造股份有限公司 | Apparatus and method for stripping an element |
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TW201442874A (en) * | 2013-03-26 | 2014-11-16 | Samsung Display Co Ltd | Delamination apparatus |
TW201838056A (en) * | 2017-03-31 | 2018-10-16 | 日月光半導體製造股份有限公司 | Apparatus and method for stripping an element |
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