TWI844098B - 半導體結構的製造方法 - Google Patents

半導體結構的製造方法 Download PDF

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Publication number
TWI844098B
TWI844098B TW111134219A TW111134219A TWI844098B TW I844098 B TWI844098 B TW I844098B TW 111134219 A TW111134219 A TW 111134219A TW 111134219 A TW111134219 A TW 111134219A TW I844098 B TWI844098 B TW I844098B
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TW
Taiwan
Prior art keywords
semiconductor structure
manufacturing semiconductor
manufacturing
semiconductor
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TW111134219A
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English (en)
Other versions
TW202318487A (zh
Inventor
陳宗儒
陳書涵
陳俊紘
志安 徐
Original Assignee
台灣積體電路製造股份有限公司
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Priority claimed from US17/662,532 external-priority patent/US20230126442A1/en
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202318487A publication Critical patent/TW202318487A/zh
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Publication of TWI844098B publication Critical patent/TWI844098B/zh

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TW111134219A 2021-10-25 2022-09-12 半導體結構的製造方法 TWI844098B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163271345P 2021-10-25 2021-10-25
US63/271,345 2021-10-25
US17/662,532 2022-05-09
US17/662,532 US20230126442A1 (en) 2021-10-25 2022-05-09 Non-Conformal Gate Oxide Formation on FinFET

Publications (2)

Publication Number Publication Date
TW202318487A TW202318487A (zh) 2023-05-01
TWI844098B true TWI844098B (zh) 2024-06-01

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200168507A1 (en) 2018-11-28 2020-05-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200168507A1 (en) 2018-11-28 2020-05-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same

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