TWI841122B - Plasma processing apparatus and method of operating same - Google Patents

Abstract

The present disclosure relates to a plasma processing apparatus. The apparatus includes a cavity cover, a lifting mechanism and an overturning mechanism. The lifting mechanism is configured to vertically move the cavity cover. The overturning mechanism is configured to apply leverage to the cavity cover so that the cavity cover has an angle, which is greater than zero degree, with respect to the horizontal plane.

Description

Plasma treatment equipment and operation method thereof

The present invention relates to a plasma processing device, and more particularly to a device capable of performing plasma cleaning on a substrate.

Generally, a plasma processing apparatus used in a semiconductor manufacturing process is an apparatus for cleaning a semiconductor device such as a lead frame and a printed circuit board substrate using plasma discharge, and can be mounted in the semiconductor manufacturing process to clean the surface of the semiconductor device.

When maintaining the plasma treatment equipment, the user must manually flip over the upper chamber cover of the plasma treatment equipment before adjusting, replacing and/or cleaning the electrodes inside the chamber. However, the weight of the upper chamber cover is usually close to 20 kilograms, and it is not convenient to manually flip the cover. In addition, after flipping over the upper chamber cover, the upper chamber cover must be kept in an open position with a lock chain or other fixings. Such a method does not have any protective measures. If the lock chain breaks or the fixings are damaged, it will cause injuries to the operator and damage to the equipment.

In some embodiments, the present disclosure provides a plasma processing apparatus. The plasma includes: a chamber cover, a lifting mechanism and a flipping mechanism. The lifting mechanism is configured to vertically move the chamber cover, and the flipping mechanism is configured to apply a lever action to the chamber cover when the lifting mechanism moves the chamber cover vertically upward to a height exceeding a first height, so that the chamber cover forms an angle greater than zero degrees relative to a horizontal plane.

In some embodiments, the present invention discloses a cleaning apparatus for semiconductor devices. The cleaning apparatus includes a lower chamber, an upper chamber that can cooperate with the lower chamber, and a pivot point. The upper chamber has a pivot end and a free end away from the pivot end. The pivot point is positioned so that it has a vertical distance from the lower chamber, and a horizontal distance between it and the free end of the upper chamber is greater than a horizontal distance between it and the pivot end of the upper chamber. In addition, the upper chamber has a top support member adjacent to the pivot end and extending approximately between the upper chamber and the pivot point.

In some embodiments, the present disclosure provides a plasma processing device. The plasma processing device includes: a chamber cover, a lifting mechanism, a supporting member, and a fulcrum. The chamber cover is configured to pivot around a first axis, the lifting mechanism is configured to vertically move the chamber cover, the supporting member is disposed on the chamber cover and adjacent to the first axis, and the fulcrum is configured to abut against the supporting member when the lifting mechanism moves the chamber cover upward to a first height. When the lifting mechanism moves the chamber cover upward to the first height and continues to move upward, the fulcrum continues to abut against the supporting member, and the chamber cover pivots around the first axis.

The above has been a fairly broad overview of the technical features of the present disclosure so that the detailed description of the present disclosure below can be better understood. Other technical features that constitute the subject matter of the patent application scope of the present disclosure will be described below. Those with ordinary knowledge in the technical field to which the present disclosure belongs should understand that the concepts and specific embodiments disclosed below can be easily used to modify or design other structures or processes to achieve the same purpose as the present disclosure. Those with ordinary knowledge in the technical field to which the present disclosure belongs should also understand that such equivalent constructions cannot deviate from the spirit and scope of the present disclosure as defined by the attached patent application scope.

In order to understand the purpose, features and effects of the present invention, the present disclosure is described in detail below with reference to the following specific embodiments and accompanying drawings.

FIG. 1A is a three-dimensional schematic diagram of a chamber assembly 100 of a plasma processing device according to an embodiment of the present disclosure. FIG. 1B is a side view schematic diagram of a chamber assembly 100 of a plasma processing device according to an embodiment of the present disclosure. In some embodiments of the present disclosure, the plasma processing device includes a plasma cleaning apparatus. Referring to FIGS. 1A and 1B, in one embodiment, in order to simplify the structure of the plasma processing device, optionally, the chamber assembly 100 of the plasma processing device includes an upper chamber 1, a lower chamber 2, and a lifting mechanism 3. The upper chamber 1 and the lower chamber 2 are configured to cooperate with each other, and the upper chamber 1 and the lower chamber 2 cooperate with each other to form a sealed chamber. In some embodiments of the present disclosure, the upper cavity 1 has a cavity inside, and an electrode (not disclosed) can be arranged in the cavity, and the lower cavity 2 has a cavity inside, and an electrode (not disclosed) is arranged in the cavity. In some embodiments of the present disclosure, the upper cavity 1 and the lower cavity 2 can be made of aluminum alloy or stainless steel. The size of the electrode can be set according to the size of the cavity.

The lifting mechanism 3 is configured to drive the upper cavity 1 to adjust it upward or downward relative to the lower cavity 2. Specifically, the lifting mechanism 3 is configured to move the upper cavity 1 vertically.

In some embodiments of the present disclosure, the upper chamber 1 and the lower chamber 2 can be electrically connected to a plasma power supply (not disclosed). When a workpiece to be processed is transferred to the chamber assembly 100 of the plasma processing equipment, the driving device 3 drives the upper chamber 1 to move up and down to close with the lower chamber 2. The plasma power supply provides electrical energy to the power electrodes in the upper chamber 1 and the lower chamber 2. That is, after the power electrodes are energized, the power electrodes in the upper chamber 1 and the lower chamber 2 perform plasma cleaning treatment on the workpiece.

As shown in FIGS. 1A and 1B , the upper chamber 1 has a chamber cover 11, a cross-beam member 13 and a top support member 15. In some embodiments of the present disclosure, the chamber cover 11 may weigh 15 to 20 kilograms, so it is very inconvenient to move the chamber cover 11 manually. The chamber cover 11 has a side 111 and a side 113 opposite to the side 111. The cross-beam member 13 is disposed adjacent to the side 113 of the chamber cover 11 and extends substantially parallel to the side 113 of the chamber cover 11. In some embodiments of the present disclosure, two ends of the cross-beam member 113 are respectively pivotally connected to two ends of the side 113 of the chamber cover 11; that is, the chamber cover 11 can pivot relative to the cross-beam member 13 around an axis L1. Furthermore, the upper cavity 10 has a pivot end including the side 113 and a free end including the side 113; it can be understood that when the cavity cover 11 rotates around the axis L1, the free end of the upper cavity moves along an arc relative to the pivot end.

The lifting mechanism 3 has a driving device 30, a lifting rod 31, a universal joint 33 and a support sleeve 35. In some embodiments of the present disclosure, the driving device 30 includes a pneumatic cylinder. In some embodiments of the present disclosure, the driving device 30 includes a two-stage pneumatic cylinder; wherein the pressure relief port of the pneumatic cylinder can be matched with an electromagnetic valve and a pressure regulating valve to control the lifting speed of the upper cavity 1. In some embodiments of the present disclosure, the driving device 30 includes an electric cylinder; wherein the electric cylinder can be matched with a reduction gear by a motor to control the lifting speed of the upper cavity 1. Because the plasma processing device disclosed in the present invention is used in the semiconductor manufacturing process, that is, it needs to be installed in a clean room, the driving device 30 cannot include a hydraulic cylinder to avoid oil and gas dust.

The lifting rod 31 is connected to the driving device 30, and supports the lower surface of the cross beam member 113 of the upper cavity 1 through the universal joint 33 and the support sleeve 35, and the driving device 30 is configured to drive the lifting rod 31 to extend or shorten. When the driving device 30 drives the lifting rod 31 to extend, the upper cavity 1 will be pushed up by the lifting rod 31 and move vertically upward; when the driving device 30 drives the lifting rod 31 to shorten, the upper cavity 1 will move vertically downward as the lifting rod 31 contracts. The universal joint 33 can provide the two connected parts to rotate relative to each other in any direction, and the support sleeve 35 can include a high-strength rubber material and has elasticity, so the universal joint 33 and the support sleeve 35 can jointly provide a buffer between the top lifting rod 31 of the lifting mechanism 3 and the cross beam component 13 of the upper cavity 1; thus, when the lifting mechanism 3 drives the upper cavity 1 to move vertically, the universal joint 33 and the support sleeve 35 can stabilize the positional relationship between the cross beam component 13 of the upper cavity 1 and the top lifting rod 31 of the lifting mechanism 3, eliminate the instability between the two and reduce the mutual impact between the two. In some embodiments of the present disclosure, the support sleeve 35 can be a non-slip member.

In some embodiments of the present disclosure, the cross beam member 13 further has a downwardly extending slide rail 131. The slide rail 131 is configured to assist in guiding the vertical movement of the upper cavity 1 when the lifting mechanism 3 pushes the upper cavity 1 to move vertically.

The chamber assembly 100 further includes a fulcrum member 4, which is disposed substantially above the lower chamber 2 and disposed at the rear side of the upper chamber 1 and adjacent to the pivot end of the upper chamber 1. Referring to FIG. 1B , the fulcrum member 4 is at a vertical height from the lower chamber 2, and in some embodiments of the present disclosure, the vertical height is fixed. Furthermore, the horizontal distance between the fulcrum member 4 and the side edge 111 of the chamber cover 11 is greater than the horizontal distance between the fulcrum member 4 and the side edge 113 of the chamber cover 11; that is, the horizontal distance between the fulcrum member 4 and the free end of the upper chamber 1 is greater than the horizontal distance between the fulcrum member 4 and the pivot end of the upper chamber 1. In some embodiments of the present disclosure, the fulcrum member 4 has a roller 41, wherein the roller 41 is configured to rotate around an axis L2. In some embodiments of the present disclosure, the axis L2 is substantially parallel to the axis L1. In some embodiments of the present disclosure, the axis L2 is substantially parallel to the side 113 of the chamber cover 11. In some embodiments of the present disclosure, the roller 41 has a smooth surface.

In addition, the upper cavity 1 further has a supporting member 15, which is disposed adjacent to the side 113 of the cavity cover 11 and extends backward and outward. In some embodiments of the present disclosure, the supporting member 15 extends in a direction substantially perpendicular to the side 113 of the cavity cover 11. In some embodiments of the present disclosure, the supporting member 15 extends substantially between the cavity cover 11 and the supporting member 4 of the upper cavity 1. In some embodiments of the present disclosure, the supporting member 15 extends outward and backward from the cavity cover 11 beyond the horizontal position of the supporting member 4; that is, in a top view, the supporting member 4 and the supporting member 15 may partially overlap each other. Therefore, it can be understood that when the lifting mechanism 3 pushes up the upper cavity 1 to a specific height, the supporting member 15 will contact and/or abut against the supporting member 4; wherein the specific height is roughly equal to the vertical position of the supporting member 4.

FIG1C is a schematic diagram of an embodiment of the portion A in FIG1A. In some embodiments of the present disclosure, the supporting member 15 is substantially columnar, and in some embodiments, the supporting member 15 has a substantially cylindrical body 150, and the roller 41 of the fulcrum member 4 has a groove 411, and the groove 411 is substantially arranged around the roller 41. When the supporting member 15 and the roller 41 of the fulcrum member 4 are in contact or engaged with each other, the cylindrical body 150 of the supporting member 15 can be accommodated in the groove 411 of the roller 41; in other words, the cylindrical body 150 of the supporting member 15 is at least partially covered by the groove 411 of the roller 41. In some embodiments of the present disclosure, the cylindrical body 150 of the top support member 15 and/or the groove 411 of the roller 41 are covered with a coating, so that when the cylindrical body 150 of the top support member 15 contacts the roller 41 of the fulcrum member 4, unnecessary particles can be avoided.

By driving the roller 41 to rotate with the supporting member 15, dust, especially metal dust, is prevented from being generated by friction between the surface of the roller 41 and the surface of the supporting member 15 due to contact and sliding. Dust will contaminate the product and affect the cleaning effect. Metal dust will induce abnormal discharge phenomena such as arcing, which will seriously affect the quality of plasma, thereby affecting the cleaning result, and even damaging the product or causing damage to the plasma equipment.

FIG1D is a schematic diagram of another embodiment of the portion A in FIG1A. In some embodiments of the present disclosure, the supporting member 15 is substantially cylindrical, and in some embodiments, the supporting member 15 has a substantially elliptical body 150-1, and the roller 41-1 of the fulcrum member 4 has a groove 411-1, and the groove 411-1 is substantially arranged around the roller 41-1. When the supporting member 15 and the roller 41-1 of the fulcrum member 4 are in contact or engaged with each other, the elliptical body 150-1 of the supporting member 15 can be accommodated in the groove 411-1 of the roller 41-1; in other words, the elliptical body 150-1 of the supporting member 15 is at least partially covered by the groove 411-1 of the roller 41-1. In some embodiments of the present disclosure, the elliptical cylindrical body 150-1 of the top support member 15 and/or the groove 411-1 of the roller 41-1 are covered with a coating, so that when the top support member 15 contacts the roller 41-1 of the fulcrum member 4, unnecessary particles can be avoided.

FIG. 1E is a schematic diagram of another embodiment of the portion A in FIG. 1A. In some embodiments of the present disclosure, the top support 15 is substantially cylindrical, and in some embodiments, the top support 15 may have a plurality of gears 153, and the fulcrum member 4 may have a gear 43. When the top support 15 contacts the gear 43 of the fulcrum member 4, the gear 153 of the top support 15 may engage with the gear 431 of the gear 43. In some embodiments of the present disclosure, the gear 153 of the top support 15 and/or the gear 431 of the gear 43 are covered with a coating, so that when the top support 15 contacts the gear 43 of the fulcrum member 4, unnecessary particles can be avoided.

FIG. 2A is a schematic diagram showing the cooperation between the upper chamber 1 and the lower chamber 2 of the chamber assembly 100 of the plasma treatment equipment. As shown in FIG. 2A , the upper chamber 1 and the lower chamber 2 are closed to each other, so that the upper chamber 1 and the lower chamber 2 cooperate with each other to form a sealed chamber. The vertical distance between the upper chamber 1 and the lower chamber 2 is substantially zero. In other words, there is no vertical distance between the chamber cover 11 of the upper chamber 1 and the lower chamber 2. In the present disclosure, the upper chamber 1 is located at an initial position in the vertical direction. In addition, because the lower chamber 2 is generally arranged horizontally, and the upper chamber 1 and the lower chamber 2 are closed to each other, the chamber cover 11 of the upper chamber 1 is substantially horizontal, that is, substantially parallel to a horizontal plane.

FIG2B is a schematic diagram showing that the upper chamber 1 of the chamber assembly 100 of the plasma processing equipment is pushed upward by the lifting mechanism 3 to move a vertical height. As shown in FIG2B , the lifting mechanism 3 vertically moves the upper chamber 1 upward so that the chamber cover 11 of the upper chamber 1 is at a vertical height H1 relative to the lower chamber 2, wherein the vertical height H1 is less than a vertical height H0 of the fulcrum member 4 relative to the lower chamber 2, that is, the chamber cover 11 of the upper chamber 1 is moved to a first position, and the first position is located between the fulcrum member 4 and the lower chamber 2 in the vertical direction. Referring to FIG. 2B , the chamber cover 11 of the upper chamber 1 is still kept roughly horizontal, that is, a vertical distance between the side 111 of the chamber cover 11 and the lower chamber 2 is roughly equal to a vertical distance between the side 113 of the chamber cover and the lower chamber 2. In other words, a vertical distance between the free end of the upper chamber 1 and the lower chamber 2 is roughly equal to a vertical distance between the pivot end of the upper chamber 1 and the lower chamber 2. In addition, the supporting member 14 does not contact the supporting member 4.

FIG2C is a schematic diagram showing that the upper chamber 1 of the chamber assembly 100 of the plasma processing equipment is pushed upward by the lifting mechanism 3 to move a vertical height. As shown in FIG2C , the lifting mechanism 3 vertically moves the upper chamber 1 upward, so that a vertical height H2 of the chamber cover 11 of the upper chamber 1 relative to the lower chamber 2 is approximately close to or equal to a vertical height H0 of the fulcrum member 4 relative to the lower chamber 2, that is, the chamber cover 11 of the upper chamber 1 is moved to a second position, and the second position is approximately aligned with the position of the fulcrum member 4 in the vertical direction. Referring to FIG. 2C , the chamber cover 11 of the upper chamber 1 is still kept roughly horizontal, that is, a vertical distance between the side 111 of the chamber cover 11 and the lower chamber 2 is roughly equal to a vertical distance between the side 113 of the chamber cover and the lower chamber 2. In other words, a vertical distance between the free end of the upper chamber 1 and the lower chamber 2 is roughly equal to a vertical distance between the pivot end of the upper chamber 1 and the lower chamber 2. In some embodiments of the present disclosure, the top support 15 is roughly in contact with the roller 41 of the fulcrum member 4. In addition, as shown in FIG. 2C , there is a distance D1 between the side 113 of the chamber cover 11 and the roller 41 of the fulcrum member 4.

Furthermore, in some embodiments of the present disclosure, the driving device 30 of the lifting mechanism 3 includes a two-stage pneumatic cylinder, and the first extension distance of the two-stage pneumatic cylinder driving the top lifting rod 31 to extend is to raise the chamber cover 11 of the upper chamber 1 to the height H2 as shown in FIG. 2C .

FIG. 2D is an enlarged schematic diagram of the B portion of FIG. 2C. As shown in FIG. 2D, the supporting member 15 and the groove 411 of the roller 41 are in contact with each other and have a contact point P1. In some embodiments of the present disclosure, the contact point P1 is approximately located at the bottom of the groove 411. In some embodiments of the present disclosure, the contact point P1 is approximately located on an axis L3 extending vertically downward from the rotation center O of the roller 41. In addition, the place where the supporting member 15 and the groove 411 of the roller 41 are in contact with each other, such as the contact point P1, can form a fulcrum for the chamber cover 11 to be subjected to a lever action.

FIG2E is a schematic diagram showing that the upper chamber 1 of the chamber assembly 100 of the plasma processing equipment is pushed upward by the lifting mechanism 3 to move a vertical height. As shown in FIG2E , the lifting mechanism 3 vertically moves the upper chamber 1 upward, so that a vertical height H3 of the chamber cover 11 of the upper chamber 1 relative to the lower chamber 2 is greater than a vertical height H0 of the fulcrum member 4 relative to the lower chamber 2 and/or greater than H2 as shown in FIG2C , that is, the chamber cover 11 of the upper chamber 1 is moved to a third position, and the third position is higher than the position of the fulcrum member 4 in the vertical direction. Referring to FIG. 2E , after the chamber cover 11 of the upper chamber 1 is moved to the vertical height H2, the lifting mechanism 3 continues to push the chamber cover 11 of the chamber 1 upward to make it exceed the vertical height H2 or the vertical height H0, and the supporting member 15 of the chamber cover 11 still abuts against the roller 41 of the supporting member 4, so that the supporting member 15 and the supporting member 4 jointly exert a lever action on the chamber cover 11, so that the chamber cover 11 pivots relative to the cross beam member 13, that is, the supporting member 15 of the chamber cover 11 rotates around the axis L1. When the chamber cover 11 pivots, the cross beam member 13 of the upper chamber 1 abutted by the lifting mechanism 3 will not rotate. In some embodiments of the present disclosure, the roller 41 of the fulcrum member 4 at least partially rotates around the axis L2 along with the rotation of the supporting member 15 of the chamber cover 11, and the surface of the roller 41 is smooth, so that the upper chamber 1 and its chamber cover 11 can rotate more smoothly.

According to the above, the chamber cover 11 of the upper chamber 1 is no longer horizontal, that is, the chamber cover 11 and the horizontal plane generate an angle greater than zero degrees. As shown in FIG2E , a vertical distance between the side 111 of the chamber cover 11 and the lower chamber 2 is greater than a vertical distance between the side 113 of the chamber cover and the lower chamber 2. In other words, a vertical distance between the free end of the upper chamber 1 and the lower chamber 2 is greater than a vertical distance between the pivot end of the upper chamber 1 and the lower chamber 2. In addition, as shown in FIG2E , there is a distance D2 between the side 113 of the chamber cover 11 and the roller 41 of the fulcrum member 4, and the distance D2 is substantially greater than the distance D1.

FIG. 2F is an enlarged schematic diagram of the C portion of FIG. 2E. As shown in FIG. 2F, the top support member 15 and the groove 411 of the roller 41 are in contact with each other and have a contact point P2. Compared with FIG. 2D, the contact point P2 is located at a different position from the contact point P1, so it can be understood that the contact point where the top support member 15 and the roller 41 are in contact with each other will move during the overturning of the chamber cover 11. In some embodiments of the present disclosure, the roller 41 will roll as the chamber cover 11 is overturned. In addition, the place where the top support member 15 and the groove 411 of the roller 41 are in contact with each other, such as the contact point P2, can form a fulcrum for the chamber cover 11 to be subjected to a lever action.

FIG2G is a schematic diagram showing that the upper chamber 1 of the chamber assembly 100 of the plasma processing equipment is pushed upward by the lifting mechanism 3 to move a vertical height. In particular, FIG2G shows that the lifting mechanism 3 lifts the chamber cover 11 of the upper chamber 1 to a maximum height. In some embodiments of the present disclosure, the driving device 30 of the lifting mechanism 3 includes a two-stage pneumatic cylinder, and FIG2G shows that the two-stage pneumatic cylinder drives the top lifting rod 31 to extend to the second extension distance.

Referring to FIG. 2G , the lifting mechanism 3 continuously moves the chamber cover 11 of the upper chamber 1 upward from the position shown in FIG. 2E to the position shown in FIG. 2G . During this period, the top support member 15 and the fulcrum member 4 continuously exert a lever action on the chamber cover 11, so that the chamber cover 11 continuously pivots around the axis L1. Thus, the angle between the chamber cover 11 and the horizontal plane continuously increases until the angle between the chamber cover 11 and the horizontal plane is the angle α shown in FIG. 2E . Because the contact position between the roller 41 of the fulcrum member 4 and the top support member 15 has a relatively large range, if the driving device 30 of the lifting mechanism 3 includes a pneumatic cylinder, the angle α can be close to 90 degrees. Similarly, if the driving device 30 of the lifting mechanism 3 includes an electric cylinder, the angle α can be greater than 90 degrees. As shown in FIG. 2G , there is a distance D3 between the side 113 of the chamber cover 11 and the roller 41 of the fulcrum member 4, and the distance D3 is substantially greater than the distance D2. It can be seen that in the process of gradually increasing the angle between the chamber cover 11 and the horizontal member, the distance between the side 113 of the chamber cover 11 and the roller 41 of the fulcrum member 4 gradually increases, and vice versa.

FIG. 2H is an enlarged schematic diagram of the D portion of FIG. 2G . As shown in FIG. 2H , the supporting member 15 and the groove 411 of the roller 41 are in contact with each other and have a contact point P3. Compared with FIG. 2D and FIG. 2F , the position of the contact point P3 is different from that of the contact points P1 and P2; the position of the contact point P3 is closer to the axis L4 extending horizontally from the rotation center O of the roller 41 than the position of the contact points P1 and P2. Therefore, it can be understood that during the process of flipping the chamber cover 11, the contact point where the supporting member 15 and the roller 41 are in contact with each other will move. In some embodiments of the present disclosure, the moving range of the contact point where the supporting member 15 and the roller 41 contact each other is roughly between the outer periphery of the roller 41 defined by the axis L3 and the axis L4, so a height of the contact point is not higher than the height where the axis L4 is located; in other words, the moving range of the contact point is roughly one-fourth of the outer periphery of the roller 41. In some embodiments of the present disclosure, the roller 41 rolls as the chamber cover 11 is flipped over. In addition, the place where the supporting member 15 and the groove 411 of the roller 41 contact each other, such as the contact point P3, can form a fulcrum for the chamber cover 11 to be subjected to a lever action.

Furthermore, the contact between the top support 15 and the groove 411 of the roller 41 can form a fulcrum for the chamber cover 11 to be subjected to the lever action, and the position of the contact point will change with the chamber cover 11; in other words, the position of the fulcrum for the chamber cover 11 to be subjected to the lever action will change with the change of the angle between the chamber cover 11 and the horizontal plane. In some embodiments of the present disclosure, the position of the fulcrum will move on the roller 41. In some embodiments of the present disclosure, the position of the fulcrum will move on the top support 15.

As can be understood from FIGS. 2A to 2H , when the chamber cover 11 is flipped over to rotate relative to the fulcrum member 4, the roller 41 of the fulcrum member 4 can simultaneously rotate. In some embodiments, when the chamber cover 11 is pushed vertically upward to rotate clockwise relative to the fulcrum member 4, the roller 41 of the fulcrum member 4 can simultaneously rotate clockwise around its rotation center O. In some embodiments, when the chamber cover 11 is pushed vertically downward to rotate counterclockwise relative to the fulcrum member 4, the roller 41 of the fulcrum member 4 can simultaneously rotate counterclockwise around its rotation center O.

As the lifting mechanism 3 continues to lift the upper cavity 1 upward, the supporting member 15 and the supporting member 4 can exert a lever action on the cavity cover 11, so that the cavity cover 11 can be flipped over. This eliminates the need for the user to use manpower to flip over the cavity cover 11 of the upper cavity 1.

Furthermore, after the lifting mechanism 3 lifts the chamber cover 11 of the upper chamber 1 to a maximum height, the lifting mechanism 3 can further keep the chamber cover 11 in the maximum flipped state, and the user can further perform maintenance operations such as adjusting, replacing and/or cleaning the electrodes inside the lower chamber 2 of the plasma treatment equipment. In this way, there is no need to use a chain or other fixings to keep the chamber cover 11 in the flipped state, which can avoid injuries to operators and damage to equipment caused by damage to the chain or the fixings.

In some embodiments of the present disclosure, the driving device 30 of the lifting mechanism 3 has a self-protection circuit (not shown) for gas/power failure. When the production line or the production site has an improper power failure or gas failure, the self-protection circuit can activate the self-protection function to prevent the chamber cover 11 from falling when it is overturned, thereby preventing damage to personnel and equipment. In other words, the self-protection circuit can continue to hold and/or fix the chamber cover 11 of the upper chamber 1 when the driving device 30 of the lifting mechanism 3 is disabled, so as to prevent the chamber cover 11 from tipping over or falling due to lack of support.

In addition, in some embodiments of the present disclosure, there is further a limit mechanism located between the top support member 15 and the support member 4 (not shown). When the chamber cover 11 is flipped up to a maximum angle, the limit mechanism is configured to prevent the chamber cover 11 from flipping over and causing the upper chamber 1 to tilt backward excessively. The limit mechanism can be on the top support member or on the support member, and it can be a part of the top support member or a part of the support member.

FIG. 3 is a graph showing the relationship between the flipping angle and the rising height of the chamber cover of the embodiment disclosed herein. As shown in FIG. 3 , the distance between the side 111 and the side 113 of the chamber cover 11 is approximately 595 mm, and the horizontal distance between the side 113 of the chamber cover 11 and the fulcrum member 4 is approximately 127.5 mm. Referring to FIG. 3 , it can be understood that when the chamber cover 11 is pushed to rise vertically by 100 mm, the flipping action begins to occur, that is, it begins to present an angle with a horizontal plane. In other words, the height of 100 mm is equivalent to H0 shown in FIG. 2B and FIG. 2C . In other words, when the chamber cover has not been pushed to a height of 100 mm, the chamber cover 11 is approximately parallel to the horizontal plane.

When the cavity cover 11 is further vertically upward by 60 mm, the angle of the cavity cover 11 relative to the horizontal plane is approximately 25.20 degrees, and at the same time, the vertical distance between one side 111 of the cavity cover 11 and the lower cavity 2 is approximately 356.902 mm.

When the cavity cover 11 is further vertically upward by 75 mm, the angle of the cavity cover 11 relative to the horizontal plane is approximately 30.47 degrees, and at the same time, the vertical distance between one side 111 of the cavity cover 11 and the lower cavity 2 is approximately 405.908 mm.

When the cavity cover 11 is further vertically upward by 100 mm, the angle of the cavity cover 11 relative to the horizontal plane is approximately 37.50 degrees, and at the same time, the vertical distance between one side 111 of the cavity cover 11 and the lower cavity 2 is approximately 457.292 mm.

FIG. 4A is a flow chart showing a process of using the plasma processing apparatus disclosed herein to perform a process on a semiconductor device.

In step 501, the user operates the lifting mechanism 3 of the plasma treatment equipment to use the lifting mechanism 3 to move the upper chamber 1 upward by a certain height. If the driving device of the lifting mechanism 3 includes the two-stage pneumatic cylinder, the pneumatic cylinder is used to apply the first extension distance to the top lifting rod 31. As shown in FIG. 2C, the lifting mechanism 3 moves the chamber cover 11 of the upper chamber 1 vertically upward so that it is at a vertical height H2 relative to the lower chamber 2. In this way, the upper chamber 1 and the lower chamber 2 are separated from each other and spaced apart by a certain distance. In addition, in this state, the chamber cover 11 of the upper chamber 1 is kept roughly horizontal.

In step 502, semiconductor devices to be processed are placed in the lower chamber 2 from a loading cassette.

In step 503, the user operates the lifting mechanism 3 of the plasma processing equipment to move the upper chamber 1 downward until it cooperates with the lower chamber 2, and the semiconductor device placed in the lower chamber 2 is accommodated in a closed space formed by the upper chamber 1 and the lower chamber 2.

In step 504, a plasma cleaning operation is performed on the semiconductor device housed in the closed space formed by the upper cavity 1 and the lower cavity 2.

In step 505, after the plasma cleaning operation is completed, the power is turned off and dry air is introduced into the closed space until the pressure in the closed space is restored to atmospheric pressure. In some embodiments of the present disclosure, the dry air includes compressed air after drying. In some embodiments of the present disclosure, the gas introduced into the closed space includes nitrogen or oxygen.

In step 506, as in step 502, the upper chamber 1 is moved upward by a height so that the upper chamber 1 and the lower chamber 2 are separated from each other and spaced apart by a distance. Similarly, the chamber cover 11 of the upper chamber 1 is kept substantially horizontal.

In step 507, the semiconductor device is moved out of the lower chamber 2 to the loading box.

Furthermore, step 502 to step 507 are repeated N times until the semiconductor device can be completely cleaned.

FIG. 4B is a flow chart showing the maintenance of the plasma processing equipment disclosed herein.

In step 701, the user is ready to start the maintenance operation of the plasma processing equipment disclosed herein; in some embodiments of the present disclosure, the user enters a maintenance password through the user interface and activates a maintenance operation button from the operation screen to activate the flipping action of the chamber cover.

In step 702, the lifting mechanism 3 is driven to move the upper cavity 1 upward by a certain height. If the driving device of the lifting mechanism 3 includes the two-stage pneumatic cylinder, the pneumatic cylinder is caused to apply the first extension distance to the lifting rod 31. In some embodiments of the present disclosure, as shown in FIG. 2C, the lifting mechanism 3 vertically moves the cavity cover 11 of the upper cavity 1 upward to a vertical height H2 relative to the lower cavity 2. In this state, the cavity cover 11 of the upper cavity 1 is kept roughly horizontal, and the jacking member 15 connected to the cavity cover 11 begins to contact the roller 41 of the fulcrum member 4.

In step 703, the lifting mechanism 3 continues to move the upper chamber 1 vertically upward, so that the upper chamber 1 rises above the vertical height H2 or H0. As shown in FIG. 2E, when the upper chamber 1 rises above the vertical height H2 or H0, the supporting member 15 and the supporting member 4 jointly exert a lever action on the chamber cover 11, so that the chamber cover 11 pivots around the axis L1. In this way, the chamber cover 11 of the upper chamber 1 not only rises vertically, but is also flipped over at the same time.

In step 704, the lifting mechanism 3 moves the upper cavity 1 vertically upward to a maximum height. If the driving device of the lifting mechanism 3 includes the two-stage pneumatic cylinder, the pneumatic cylinder is used to apply the first extension distance to the top lifting rod 31. As shown in FIG2E, the lifting mechanism 3 continues to move the upper cavity 1 upward to the maximum height, and the top holding member 15 and the fulcrum member 4 continue to apply a lever action to the cavity cover 11, so that the cavity cover 11 is continuously flipped to reach an angle α with the horizontal plane. After the upper cavity 1 is lifted to the maximum height, the lifting mechanism 3 can hold the upper cavity 1 so that the height and flipping angle of the cavity cover 11 of the upper cavity 1 are maintained at the maximum.

In step 705, the user performs maintenance operations such as adjusting, replacing, and cleaning the internal electrical components of the plasma equipment chamber.

In step 706, after the user completes the internal maintenance work, he can control and drive the driving device 30 of the lifting mechanism 3, so that the lifting mechanism 3 drives the upper cavity 1 to move vertically downward, thereby allowing the upper cavity 1 to return to its original position.

By using the chamber assembly 100 of the plasma processing device disclosed herein, it is possible to avoid using manpower to flip over the heavy chamber cover 11 during maintenance operations; and during maintenance operations, the chamber cover 11 can be fixedly kept in a flipped state so that the chamber cover 11 will not fall and cause injuries to operators or damage to equipment.

The specific structural and functional details disclosed herein are merely representative and are used for the purpose of describing exemplary embodiments of the present invention. However, the present invention may be embodied in many alternative forms and should not be construed as being limited to only the embodiments described herein.

The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description herein, unless otherwise specified, the meaning of "plurality" is two or more. In addition, the term "includes" and any variations thereof are intended to cover non-exclusive inclusions.

Additionally, for ease of description, spatially relative terminology (e.g., "below," "beneath," "below," "above," "upper," "above," and the like) may be used herein to describe the relationship of one element or component to another element or components as depicted in the figures. Spatially relative terminology is intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein may be interpreted accordingly.

As used herein, the terms "substantially," "substantially," "essentially," and "about" are used to describe and explain small variations. When used in conjunction with an event or condition, the terms may relate to instances in which the event or condition occurred exactly as well as instances in which the event or condition occurred very approximately. For example, when used in conjunction with a numerical value, the terms may relate to a range of variation of less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two values may be considered "substantially" the same or equal if the difference between them is less than or equal to ±10% of a mean of the values (e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%). For example, "substantially" parallelism may involve an angular variation of less than or equal to ±10° relative to 0°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, "substantially" perpendicular may involve an angular variation of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

The features of several embodiments have been summarized above so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to implement the same purpose and/or achieve the same advantages of the embodiments introduced in this article. Those skilled in the art should also be aware that such equivalent structures should not deviate from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and modifications to this article.

100: Chamber assembly

1: Upper cavity

11: Cavity cover

111: Side

113: Side

13: Cross beam components

131: Slide rail

15: Top support

150: Body

150-1: Main body

153: Teeth

2: Lower cavity

3: Lifting mechanism

30: Drive device

31: Top lift

33: Universal joint

35: Support sleeve

4: Fulcrum

41: Roller

41-1: Roller

411: Groove

411-1: Groove

43: Gear

431: Teeth

The following embodiments, together with the accompanying drawings, will provide a better understanding of the present disclosure. It should be noted that, in accordance with standard industry practice, the various features are not drawn to scale. In fact, for the sake of clarity, the sizes of the various features may be arbitrarily enlarged or reduced.

FIG. 1A is a schematic three-dimensional diagram of a chamber assembly of a plasma processing apparatus according to an embodiment of the present disclosure.

FIG. 1B is a schematic side view of a chamber assembly of a plasma processing apparatus according to an embodiment of the present disclosure.

FIG. 1C is an enlarged schematic diagram of an embodiment of portion A in FIG. 1A .

FIG. 1D is an enlarged schematic diagram of another embodiment of portion A in FIG. 1A .

FIG. 1E is an enlarged schematic diagram of another embodiment of portion A in FIG. 1A .

FIG. 2A is a schematic diagram of a chamber assembly for operating a plasma processing apparatus according to an embodiment of the present disclosure.

FIG. 2B is a schematic diagram of a chamber assembly for operating a plasma processing apparatus according to an embodiment of the present disclosure.

FIG. 2C is a schematic diagram of a chamber assembly for operating a plasma processing apparatus according to an embodiment of the present disclosure.

FIG. 2D is an enlarged schematic diagram of portion B in FIG. 2C .

FIG. 2E is a schematic diagram of a chamber assembly for operating a plasma processing apparatus according to an embodiment of the present disclosure.

FIG. 2F is an enlarged schematic diagram of portion C in FIG. 2E .

FIG. 2G is a schematic diagram of a chamber assembly for operating a plasma processing apparatus according to an embodiment of the present disclosure.

FIG. 2H is an enlarged schematic diagram of portion D in FIG. 2G .

FIG. 3 is a diagram showing the relationship between the flipping angle and the rising height of the cavity cover according to the embodiment of the present disclosure.

FIG. 4A is a flow chart showing the operation of a plasma processing apparatus according to an embodiment of the present disclosure.

FIG. 4B is a flow chart showing the operation of a plasma processing apparatus according to an embodiment of the present disclosure.

100: Chamber assembly

1: Upper cavity

11: Cavity cover

111: Side

113: Side

13: Cross beam components

131: Slide rail

15: Top support

2: Lower cavity

3: Lifting mechanism

30: Driving device

31: Top lift rod

33: Universal joint

35: Support sleeve

4: Fulcrum

41: Roller

Claims (20)

A method for flipping a cavity cover comprises: providing a cavity cover; providing a supporting member on the cavity cover; providing a fulcrum member configured to contact the supporting member of the cavity cover; and providing a force to flip the cavity cover, wherein the supporting member and the supporting member contact each other to form a fulcrum; wherein the fulcrum member rotates as the cavity cover is flipped; wherein, during the process of flipping the cavity cover, a position of the fulcrum on the fulcrum member moves. The method of claim 1, wherein when the cavity cover rotates in a clockwise direction relative to the fulcrum, the fulcrum rotates in a clockwise direction. A method as claimed in claim 1, wherein during the process of the chamber cover being flipped over, the fulcrum moves at a position of the supporting member. The method of claim 1, wherein the range of movement of the fulcrum on the fulcrum member is approximately less than or equal to one quarter of an outer circumference of the fulcrum member. As in the method of claim 4, the lowest position of the fulcrum is approximately located on an axis extending vertically downward from a rotation center of the fulcrum member. As in the method of claim 4, the highest position of the fulcrum is not higher than the height of an axis extending horizontally from a rotation center of the fulcrum member. As in the method of claim 1, during the process of the chamber cover being flipped over, the straight line distance between the fulcrum and the chamber cover gradually increases. The method of claim 7, wherein, during the process of the chamber cover being closed, the straight-line distance between the fulcrum and the chamber cover gradually decreases. A method for flipping a cavity cover comprises: providing a cavity cover; providing a supporting member on the cavity cover; providing a fulcrum member configured to contact the supporting member of the cavity cover; and providing a force to flip the cavity cover, wherein the supporting member and the supporting member contact each other to form a fulcrum; wherein the supporting member rotates as the cavity cover is flipped; wherein, during the process of flipping the cavity cover, the straight line distance between the supporting member and the cavity cover gradually increases. A method for flipping a chamber cover as claimed in claim 9, wherein during the process of closing the chamber cover, the straight-line distance between the fulcrum and the chamber cover gradually decreases. A flip-over chamber cover device comprises: a flip-over chamber cover; a supporting member protruding from one side of the chamber cover; and a rotatable fulcrum member spaced apart from the chamber cover and adjacent to the side of the chamber cover; wherein the fulcrum member has a groove configured to accommodate the supporting member when the fulcrum member contacts the supporting member. As in claim 11, the flip-over chamber cover device, wherein the groove is arranged roughly around the supporting member. As in claim 11, the flip-over cavity cover device, wherein when the groove accommodates the supporting member, the groove can roughly fit the supporting member. As in claim 11, the flip-up chamber cover device, wherein the supporting member has a generally cylindrical body. As in claim 14, in the flip-over chamber cover device, when the supporting member contacts the supporting member, the roughly cylindrical body is partially covered by the supporting member. A plasma processing device includes: a lower chamber; a chamber cover that can cooperate with the lower chamber; a lifting mechanism configured to apply force to the chamber cover in a straight line direction; and a flipping mechanism configured to apply a lever action to the chamber cover so that the chamber cover forms an angle greater than zero degrees relative to the horizontal plane, wherein the flipping mechanism includes: a supporting member disposed on the edge of the chamber cover; and a roller configured to serve as a fulcrum when the flipping mechanism applies a lever action to the chamber cover. The apparatus of claim 16, wherein the lifting mechanism comprises a pneumatic cylinder device. The device of claim 17, wherein the lifting mechanism includes a non-slip member in contact with the upper chamber. The apparatus of claim 16, wherein the lifting mechanism is configured to push the chamber cover to a first height and to a second height, and wherein during the period when the lifting mechanism pushes the chamber cover from the first height to the second height, the flipping mechanism simultaneously applies a lever action to the chamber cover to flip the chamber cover. As in the apparatus of claim 19, wherein the supporting member does not contact the roller before the lifting mechanism pushes the chamber cover to the first height.

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