TWI834311B - Wafer probing path generation system and method thereof - Google Patents

Wafer probing path generation system and method thereof Download PDF

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TWI834311B
TWI834311B TW111136141A TW111136141A TWI834311B TW I834311 B TWI834311 B TW I834311B TW 111136141 A TW111136141 A TW 111136141A TW 111136141 A TW111136141 A TW 111136141A TW I834311 B TWI834311 B TW I834311B
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die
wafer
path
testable
coordinate
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TW202413969A (en
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陳俊霖
賀雲朋
陳良波
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全智科技股份有限公司
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本發明為有關一種晶圓針測路徑產生系統及其方法,主要結構包括一晶圓圖讀取模組、一座標定義單元、一測站圖讀取模組、一路徑方向設定單元、一接觸條件載入單元、一條件辨識模組、及一檔案建立模組。藉此,讀取晶圓上所有可測試點及其裸晶特性,並賦予可測試點一座標位置,再將座標位置陣列化標記以計算出可測試點間的相對位置關係,接著設定座標位置間的移動方向優先順序、及針對可測試點載入至少一接觸條件,即可逐一對各可測試點進行裸晶特性與接觸條件之比對,最後將符合者寫入空白針測路徑檔中,以準確快速的產生針測路徑。 The invention relates to a wafer probe path generation system and method. The main structure includes a wafer map reading module, a coordinate definition unit, a station map reading module, a path direction setting unit, and a contact A conditional loading unit, a conditional identification module, and a file creation module. In this way, all testable points on the wafer and their die characteristics are read, and a coordinate position is assigned to the testable point. The coordinate position is then marked in an array to calculate the relative position relationship between the testable points, and then the coordinate position is set. Prioritize the movement direction among the test points and load at least one contact condition for the testable points, then you can compare the die characteristics and contact conditions for each testable point one by one, and finally write the qualified ones into the blank probe path file. , to accurately and quickly generate needle measurement paths.

Description

晶圓針測路徑產生系統及其方法 Wafer probing path generation system and method thereof

本發明為提供一種可依據晶圓圖及針測卡測站圖,及配合各種接觸條件進行統整規劃與分析,而準確快速的產生客製化或最佳化針測路徑的晶圓針測路徑產生系統及其方法。 The present invention provides a wafer probe tester that can perform integrated planning and analysis based on wafer diagrams and probe card test station diagrams, and cooperate with various contact conditions to accurately and quickly generate customized or optimized probe test paths. Path generation system and method thereof.

按,半導體的封裝測試可區分為兩大部分,分別是在晶圓加工完成後的晶圓測試,以及封裝完成後的成品測試。晶圓測試是利用晶圓測試機上晶圓測試裝置的探針與待測晶圓上各晶粒的焊墊相連接,然後將測得的資料送往測試機做分析與判斷,而整理出各晶粒的可修補資料,依據這些修補資料,測試人員可以經由雷射修補機將不良的元件替換掉,再經測試通過後,即告完成。 According to reports, semiconductor packaging testing can be divided into two parts, namely wafer testing after wafer processing is completed, and finished product testing after packaging is completed. Wafer testing is to use the probes of the wafer testing device on the wafer testing machine to connect to the pads of each die on the wafer to be tested, and then send the measured data to the testing machine for analysis and judgment, and sort out Based on the repairable data of each die, testers can use the laser repair machine to replace the defective components. After passing the test, it is completed.

每個待測晶圓上通常具有數萬個晶粒,每個晶粒的大小、位置、功能、品質、待檢測項目不盡相同,因此,在測試過程中,事實上會遇到不需要測試、不能測試、或要測試兩次以上的晶粒,然而就針測路徑而言,目前雖有針測機廠商提供之晶圓路徑產生器,但所提供路徑只是制式化的依序走過每個晶粒,一般路徑規劃方式僅為確保每個晶粒都能走過一次的最短路徑,換言之,此路徑也會經過不需要測試及不能測試的晶粒位置,而需要測試兩次以上的晶粒位置,則會等到所有晶粒測過一次後,才回頭尋找還需要測試第二次的晶粒位置。故其產生路徑不會配合針測卡測站圖達成最佳化,或者無法依據晶圓上的標註點或閃避點進行路徑規劃,使其不論在測試時間或移動路徑上皆非真正意義上的最短路徑。 There are usually tens of thousands of die on each wafer to be tested. The size, location, function, quality, and items to be tested of each die are different. Therefore, during the testing process, in fact, there will be problems that do not require testing. , cannot be tested, or have to be tested more than twice. However, as far as the pin test path is concerned, although there are currently wafer path generators provided by pin test machine manufacturers, the paths provided are only standardized paths that go through each step in sequence. For each die, the general path planning method is only the shortest path to ensure that each die can travel once. In other words, this path will also pass through die locations that do not need to be tested and cannot be tested, and die locations that need to be tested more than twice. If the grain position is determined, it will wait until all the grains have been measured once before looking back to find the grain position that needs to be tested a second time. Therefore, the generated path will not be optimized with the pin test card test station map, or the path cannot be planned based on the marking points or avoidance points on the wafer, making it not truly accurate in terms of test time or movement path. shortest path.

是以,要如何解決上述習用之問題與缺失,即為本發明之發明人與從事此行業之相關廠商所亟欲研究改善之方向所在者。 Therefore, how to solve the above conventional problems and deficiencies is the direction that the inventor of the present invention and related manufacturers engaged in this industry are eager to research and improve.

故,本發明之發明人有鑑於上述缺失,乃蒐集相關資料,經由多方評估及考量,並以從事於此行業累積之多年經驗,經由不斷試作及修改,始設計出此種可依據晶圓圖及針測卡測站圖,及配合各種接觸條件進行統整規劃與分析,而準確快速的產生客製化或最佳化針測路徑之晶圓針測路徑產生系統及其方法的發明專利者。 Therefore, in view of the above shortcomings, the inventor of the present invention collected relevant information, evaluated and considered many aspects, and used his many years of experience in this industry to design such a device that can be based on wafer diagrams through continuous trials and modifications. The inventor and patentee of the wafer probing path generation system and its method, including probing card test station diagrams, and comprehensive planning and analysis based on various contact conditions, to accurately and quickly generate customized or optimized probing paths. .

本發明之主要目的在於:可依據晶圓圖及針測卡測站圖,及配合各種接觸條件進行統整規劃與分析,而準確快速的產生客製化或最佳化針測路徑。 The main purpose of the present invention is to conduct integrated planning and analysis based on wafer diagrams and pin test card test station diagrams, as well as various contact conditions, to accurately and quickly generate customized or optimized pin test paths.

為達成上述目的,本發明之主要結構包括:一供讀取晶圓上之所有可測試點及其裸晶特性之晶圓圖讀取模組,該晶圓圖讀取模組係資訊連結一座標定義單元,以將該些可測試點設定於同一座標系統上並賦予一座標位置,該座標定義單元係資訊連結一測站圖讀取模組,以將該些座標位置陣列化標記,並計算出各該可測試點間的相對位置關係,並具有一供設定各該座標位置間的移動方向優先順序之路徑方向設定單元、一針對該些可測試點載入至少一接觸條件之接觸條件載入單元、一根據該移動方向優先順序逐一對各該座標位置之可測試點,進行該裸晶特性與該接觸條件之比對的條件辨識模組、以及一供產生一空白針測路徑檔之檔案建立模組,以將比對結果符合之該座標位置及該裸晶特性,寫入該空白針測路徑檔中。 In order to achieve the above object, the main structure of the present invention includes: a wafer map reading module for reading all testable points on the wafer and its die characteristics. The wafer map reading module is an information link The coordinate definition unit is used to set the testable points on the same coordinate system and assign a coordinate position. The coordinate definition unit is information-linked to a station map reading module to mark the coordinate positions in an array, and Calculate the relative positional relationship between the testable points, and have a path direction setting unit for setting the priority of the movement direction between the coordinate positions, and a contact condition that loads at least one contact condition for the testable points. A loading unit, a condition identification module for comparing the characteristics of the die and the contact condition according to the priority order of the movement direction to the testable points at each coordinate position, and a blank probe path file for generating The file creation module is used to write the coordinate position and die characteristics that the comparison result matches into the blank probe path file.

當使用者利用本發明進行晶圓針測路徑之規劃時,乃載入待測的晶圓圖及針測卡測站圖,以將所有可測試點的位置陣列化標記,並根據裸晶特性、及移動方向優先順序,逐一比對每個可測試點的裸晶特性與接觸條件,接著將比對結果符合的座標位置及裸晶特性,依序寫入空白針測路徑檔中,而將比對結果不符合忽略不處理,並搜尋下一個座標位置之可測試點,直到搜尋完畢所有座標位置之可測試點,爾後實際測試時,即可根據空白針測路徑檔中的座標位置排列順序作為針測路徑。如此一來,不但可在短時間內完成路經編排,也可使實際測試路徑最佳化或客製化,而大幅提高測試效率。 When the user uses the present invention to plan the wafer probing path, the wafer to be tested and the probing card test station map are loaded to mark the positions of all testable points in an array, and according to the characteristics of the die , and the priority order of movement direction, compare the bare chip characteristics and contact conditions of each testable point one by one, and then write the coordinate positions and bare chip characteristics consistent with the comparison results into the blank probe path file in sequence, and If the comparison result is not consistent, it will be ignored and not processed, and the testable point at the next coordinate position will be searched until the testable points at all coordinate positions are searched. Then during the actual test, the sequence can be arranged according to the coordinate position in the blank probe path file. as a needle measurement path. In this way, not only can path arrangement be completed in a short time, but the actual test path can also be optimized or customized, thereby greatly improving test efficiency.

藉由上述技術,可針對習用晶圓路徑產生器所存在之所產生路徑僅為制式化的最短路徑,並未配合針測卡測站圖達成最佳化,或是無法依據晶圓上的標註點或閃避點進行路徑規劃,導致路徑規劃時間較長、測試效率較低 的問題點加以突破,達到上述優點之實用進步性。 Through the above technology, the path generated by the conventional wafer path generator is only the standardized shortest path, which is not optimized with the pin test card test station diagram, or cannot be based on the markings on the wafer. Path planning is performed at certain points or avoidance points, resulting in longer path planning time and lower testing efficiency. The problem points must be broken through to achieve the practical and progressive nature of the above advantages.

1:晶圓圖讀取模組 1: Wafer map reading module

11:座標定義單元 11: Coordinate definition unit

2:測站圖讀取模組 2: Station map reading module

3:路徑方向設定單元 3: Path direction setting unit

31:路徑起點設定單元 31: Path starting point setting unit

4:接觸條件載入單元 4: Contact condition loading unit

5:條件辨識模組 5: Condition identification module

6:檔案建立模組 6: File creation module

7:統計單元 7: Statistical unit

8:分析單元 8: Analysis unit

第一圖 係為本發明較佳實施例之結構方塊圖。 The first figure is a structural block diagram of a preferred embodiment of the present invention.

第二圖 係為本發明較佳實施例之使用狀態圖。 The second figure is a usage state diagram of the preferred embodiment of the present invention.

第三圖 係為本發明較佳實施例之設定示意圖。 The third figure is a schematic diagram of the settings of the preferred embodiment of the present invention.

第四圖 係為本發明較佳實施例之步驟方塊流程圖。 The fourth figure is a step block flow chart of the preferred embodiment of the present invention.

第五圖 係為本發明較佳實施例之路徑規劃示意圖。 The fifth figure is a schematic diagram of path planning according to the preferred embodiment of the present invention.

第六圖 係為本發明再一較佳實施例之實施示意圖。 Figure 6 is a schematic diagram of yet another preferred embodiment of the present invention.

為達成上述目的及功效,本發明所採用之技術手段及構造,茲繪圖就本發明較佳實施例詳加說明其特徵與功能如下,俾利完全了解。 In order to achieve the above-mentioned objects and effects, the technical means and structures adopted by the present invention are described in detail below with respect to the preferred embodiments of the present invention, so as to facilitate a complete understanding.

請參閱第一圖至第五圖所示,係為本發明較佳實施例之結構方塊圖至路徑規劃示意圖,由圖中可清楚看出本發明係包括: Please refer to Figures 1 to 5, which are structural block diagrams and path planning schematic diagrams of preferred embodiments of the present invention. It can be clearly seen from the figures that the present invention includes:

一晶圓圖讀取模組1,係供讀取晶圓上之所有可測試點及其裸晶特性,其中該裸晶特性係為正常裸晶、免測試裸晶、需迴避裸晶、或不可測試裸晶其中之一者; A wafer map reading module 1 is used to read all testable points on the wafer and its die characteristics, wherein the die characteristics are normal die, test-free die, need to avoid die, or One of the bare dies cannot be tested;

一座標定義單元11,係資訊連結該晶圓圖讀取模組1,以將該些可測試點設定於同一座標系統上並賦予一座標位置; A coordinate definition unit 11 is information-linked to the wafer map reading module 1 to set the testable points on the same coordinate system and assign a coordinate position;

一測站圖讀取模組2,係資訊連結該座標定義單元11,以將該些座標位置陣列化標記,並計算出各該可測試點間的相對位置關係; A station map reading module 2 is information-linked to the coordinate definition unit 11 to mark the coordinate positions in an array and calculate the relative positional relationship between the testable points;

一路徑方向設定單元3,係供設定各該座標位置間的移動方向優先順序; A path direction setting unit 3 is used to set the priority order of movement directions between the coordinate positions;

一接觸條件載入單元4,係針對該些可測試點載入至少一接觸條件,其中該接觸條件係為允許接觸免測試裸晶、允許接觸需迴避裸晶、允許接觸或超過晶圓邊界、允許全站測試、或限定裸晶最大接觸次數其中之一者; A contact condition loading unit 4 loads at least one contact condition for the testable points, where the contact condition is allowed to contact the test-free die, allowed to contact the bare die that needs to be avoided, allowed to contact or exceed the wafer boundary, Either allow site-wide testing or limit the maximum number of bare die contacts;

一條件辨識模組5,係根據該移動方向優先順序逐一對各該座標位置之可測試點,進行該裸晶特性與該接觸條件之比對;及 A condition identification module 5 compares the characteristics of the die with the contact conditions at each testable point at the coordinate position one by one according to the priority order of the movement direction; and

一檔案建立模組6,供產生一空白針測路徑檔,並資訊連結該條件辨識模組5,以將比對結果符合之該座標位置及該裸晶特性,寫入該空白針測路徑檔中。 A file creation module 6 is used to generate a blank probe path file and is information-linked to the condition identification module 5 to write the coordinate position and the die characteristics that the comparison result matches into the blank probe path file. middle.

而本發明之晶圓針測路徑產生方法,其主要包括: The wafer probing path generation method of the present invention mainly includes:

(a)讀取晶圓:利用一晶圓圖讀取模組,供讀取晶圓上之所有可測試點及其裸晶特性; (a) Reading the wafer: using a wafer map reading module to read all testable points on the wafer and its die characteristics;

(b)座標定義:利用一資訊連結該晶圓圖讀取模組之座標定義單元,將該些可測試點設定於同一座標系統上並賦予一座標位置; (b) Coordinate definition: Use an information link to the coordinate definition unit of the wafer map reading module to set the testable points on the same coordinate system and assign a coordinate position;

(c)讀取測站圖:利用一資訊連結該座標定義單元之測站圖讀取模組,將該些座標位置陣列化標記,並計算出各該可測試點間的相對位置關係; (c) Read the station map: use an information link to the station map reading module of the coordinate definition unit, mark the coordinate positions in an array, and calculate the relative position relationship between the testable points;

(d)設定路徑方向:利用一路徑方向設定單元,設定各該座標位置間的移動方向優先順序; (d) Set the path direction: use a path direction setting unit to set the priority of the movement direction between each coordinate position;

(e)載入接觸條件:利用一接觸條件載入單元,針對該些可測試點載入至少一接觸條件; (e) Loading contact conditions: Use a contact condition loading unit to load at least one contact condition for the testable points;

(f)接觸條件比對:利用一條件辨識模組,根據該移動方向優先順序逐一對各該座標位置之可測試點,進行該裸晶特性與該接觸條件之比對; (f) Contact condition comparison: Use a condition identification module to compare the characteristics of the die with the contact conditions at each testable point at the coordinate position one by one according to the priority order of the movement direction;

(g)比對結果是否符合:若比對結果不符合,則回到步驟(f)搜尋下一個座標位置之可測試點,若比對結果符合,則進入步驟(h); (g) Whether the comparison results are consistent: If the comparison results are not consistent, go back to step (f) to search for the testable point at the next coordinate position. If the comparison results are consistent, go to step (h);

(h)寫入空白針測路徑檔:利用一檔案建立模組,產生一空白針測路徑檔,並將比對結果符合之該座標位置及該裸晶特性,寫入該空白針測路徑檔中;及 (h) Write a blank probing path file: Use a file to create a module to generate a blank probing path file, and write the coordinate position and die characteristics that match the comparison result into the blank probing path file in; and

(i)搜尋下一個可測試點:回到步驟(f)搜尋下一個座標位置之可測試點,直到搜尋完畢所有座標位置之可測試點。 (i) Search for the next testable point: Return to step (f) to search for the testable point at the next coordinate position until all testable points at the coordinate position are searched.

藉由上述之說明,已可了解本技術之結構,而依據這個結構之對應配合,更可依據晶圓圖及針測卡測站圖,及配合各種接觸條件進行統整規劃與分析,而達到準確快速的產生客製化或最佳化針測路徑之目的,而由圖中可清楚看出,本發明之路徑產生系統係由軟體開發程式(如NI LabVIEW)所設計而成之軟體,晶圓圖讀取模組1乃於使用者載入晶圓圖時,判讀出圖中的可測試點及其裸晶特性,並藉由座標定義單元11將整個晶圓圖設定在同一座標系統上 ,而將每個可測試點賦予一座標位置,至於裸晶特性則包括正常裸晶、免測試裸晶、需迴避裸晶、及不可測試裸晶,其中,免測試裸晶,或稱晶圓標註點(Marking die on wafer),為探針可正常通過,但無須對其針測的位置(如一般電路),如第五圖所示,本實施例中乃標示為(M),需迴避裸晶,或稱晶圓閃避點(Skip die on wafer),為測試時需要忽略或跳過的裸晶,否則會對某些探針造成損傷,本實施例中乃標示為(S),不可測試裸晶,或稱晶圓不測點(Not test die on wafer),為探針可正常通過,但可能因損傷或髒汙而無法對其針測的裸晶,本實施例中乃標示為(N),至於正常晶圓在本實施例中則根據相鄰位置關係依序標示為連續的自然數。 Through the above description, we can understand the structure of this technology, and based on the corresponding coordination of this structure, we can also conduct integrated planning and analysis based on the wafer diagram and the pin test card test station diagram, as well as various contact conditions, to achieve The purpose of accurately and quickly generating customized or optimized needle measurement paths, and it can be clearly seen from the figure that the path generation system of the present invention is software designed by a software development program (such as NI LabVIEW). When the user loads the wafer map, the circle map reading module 1 interprets the testable points and die characteristics in the map, and sets the entire wafer map on the same coordinate system through the coordinate definition unit 11 , and assign a coordinate position to each testable point. As for the die characteristics, they include normal die, test-free die, avoidance die, and untestable die. Among them, test-free die, or wafer Marking point (Marking die on wafer) is a position where the probe can pass through normally but does not need to be probed (such as a general circuit). As shown in Figure 5, it is marked (M) in this embodiment and needs to be avoided. The die, or Skip die on wafer, is a die that needs to be ignored or skipped during testing, otherwise it will cause damage to some probes. In this embodiment, it is marked (S) and cannot be The test die, or Not test die on wafer, is a die that the probe can pass through normally, but may not be probed due to damage or dirt. In this embodiment, it is marked ( N), as for normal wafers, in this embodiment, they are marked as continuous natural numbers in order according to the adjacent position relationship.

另外,測站圖讀取模組2可供使用者載入針測卡測站圖,以根據每個可測試點的座標位置予以陣列化標記(Dut Array),例如裸晶1的座標位置為(215,200)、裸晶2的座標位置為(215,180)、裸晶3的座標位置為(190,180)、裸晶4的座標位置為(190,215),則在陣列中的每個格子得以5為單位間隔排列,如此一來,假設以裸晶1的座標位置為起點,陣列中裸晶1的位置即標示為1,裸晶2位於裸晶1下方距離20處,故在陣列中裸晶2位於裸晶1下方第四格處(20/5=4),且裸晶2的位置標示為2,裸晶1與裸晶2間的三格無裸晶位置則標示為0,同理,其餘裸晶位置陣列化後標示如第三圖之Dut Array,並根據此陣列化標記,計算出各可測試點間的相對位置關係,如第三圖之Dut Index Relation,裸晶1為起點故相對位置關係為(0,0)、裸晶2相對起點的位置關係為(0,-4)、裸晶3相對起點的位置關係為(5,-4)、裸晶4相對起點的位置關係為(5,0),並以Dut Index Relation表格中的位置關係由上而下依序處理,來作為針測機的移動路徑。 In addition, the test station map reading module 2 allows users to load the probe card test station map to mark the array (Dut Array) according to the coordinate position of each testable point. For example, the coordinate position of die 1 is (215,200), the coordinate position of die 2 is (215,180), the coordinate position of die 3 is (190,180), and the coordinate position of die 4 is (190,215), then each grid in the array is spaced in units of 5 Arrangement, in this way, assuming that the coordinate position of die 1 is used as the starting point, the position of die 1 in the array is marked as 1, and die 2 is located at a distance of 20 below die 1, so die 2 is located at the The fourth grid below die 1 (20/5=4), and the position of bare die 2 is marked as 2. The three grids between die 1 and die 2 without bare die are marked as 0. In the same way, the position of the other bare die is marked as 0. After the chip position is arrayed, it is marked as Dut Array in the third picture. Based on this array mark, the relative position relationship between each testable point is calculated, as shown in the Dut Index Relation in the third picture. Die 1 is the starting point, so the relative position The relationship is (0,0), the positional relationship of bare die 2 relative to the starting point is (0,-4), the positional relationship of bare die 3 relative to the starting point is (5,-4), the positional relationship of bare die 4 relative to the starting point is ( 5,0), and use the positional relationship in the Dut Index Relation table to process it in order from top to bottom as the moving path of the needle testing machine.

再者,路徑方向設定單元3乃供設定各座標位置間的移動方向優先順序,如第二圖之Direction所示,具有由上而下及由左而右(Top to Down+Left to Right)、由上而下及由右而左(Top to Down+Right to Left)、由下而上及由左而右(Down to Top+Left to Right)、由下而上及由右而左(Down to Top+Right to Left)、由右而左及由上而下(Right to Left+Top to Down)、由右而左及由下而上(Right to Left+Down to Top)、由左而右及由上而下(Left to Right+Top to Down)、與由左而右及由下而上(Left to Right+Down to Top)等設定選項,而上述裸晶1到裸晶4係以由上而下及由左而右之移動方向優先順序所排列出來的。 Furthermore, the path direction setting unit 3 is used to set the priority of the movement direction between each coordinate position. As shown in the Direction in the second figure, it has top to down and left to right (Top to Down+Left to Right), Top to Down+Right to Left, Down to Top+Left to Right, Down to Top+Right to Left), right to left and top to down (Right to Left+Top to Down), right to left and bottom to top (Right to Left+Down to Top), left to right and Setting options include Left to Right+Top to Down, Left to Right and Bottom to Top, and the above-mentioned die 1 to die 4 are from top to bottom. It is arranged in the priority order of moving directions from down to left and from left to right.

最後,接觸條件載入單元4乃針對可測試點載入至少一接觸條件,例如:允許接觸晶圓閃避點(Enable Contact Skip Die)、允許接觸晶圓標註點(Enable Contact Mark Die)、允許接觸或超過晶圓邊界(Enable Contact Wafer Edge)、只允許全站測試(Full Site Contact Only)、及裸晶最大接觸次數(Max.Contact Count)。習知的路徑產生器多以只允許全站測試作為接觸條件,而必須走過所有的可測試點,但若可測試點中具有需迴避裸晶,且針測機為不允許接觸晶圓閃避點之機型,則以此條件進行測試很有可能因碰撞而對裸晶或針測機造成損傷,而本發明提供之允許接觸晶圓閃避點的接觸條件,乃用於針測機為允許接觸晶圓閃避點之機型時,另本發明提供之只允許全站測試的接觸條件,則用於可測試點中不具有需迴避裸晶者。至於允許接觸晶圓標註點、允許接觸或超過晶圓邊界、及裸晶最大接觸次數等設定條件,乃根據可測試點的分布位置、或待檢測項目選擇性設定,以縮短路徑編排所需的時間。 Finally, the contact condition loading unit 4 loads at least one contact condition for the testable point, such as: allowing contact with the wafer avoidance point (Enable Contact Skip Die), allowing contact with the wafer marking point (Enable Contact Mark Die), allow contact with or exceed the wafer boundary (Enable Contact Wafer Edge), only allow full site testing (Full Site Contact Only), and the maximum number of contacts of the die (Max.Contact Count). Most of the conventional path generators only allow full-site testing as a contact condition, and must go through all testable points. However, if there is a bare die in the testable point, it needs to be avoided, and the probe tester is not allowed to touch the wafer. For models with wafer points, testing under this condition is likely to cause damage to the bare chip or the probe tester due to collision. However, the contact conditions provided by the present invention that allow contact with the wafer avoidance point are used for the probe tester to allow When contacting the model with wafer avoidance points, the contact conditions provided by the present invention that only allow full-station testing are used for those that do not have bare wafers that need to be avoided among the testable points. As for the setting conditions such as the allowed contact with wafer marking points, the allowed contact with or beyond the wafer boundary, and the maximum number of bare chip contacts, they are selectively set based on the distribution position of testable points or the items to be inspected to shorten the time required for path planning. time.

所有參數條件設定完成後,如步驟(f)所示,乃進入接觸條件比對程序,利用條件辨識模組5根據移動方向優先順序逐一對各座標位置之可測試點,進行裸晶特性與接觸條件之比對,若比對結果不符合,則搜尋下一個座標位置之可測試點,若比對結果符合,則利用檔案建立模組6產生一個空白針測路徑檔,並將比對結果符合之該座標位置及該裸晶特性,寫入該空白針測路徑檔中,然後繼續搜尋下一個座標位置之可測試點並重複比對動作,直到搜尋完畢所有座標位置之可測試點。如此一來最終產生的針測路徑為根據空白針測路徑檔中的座標位置排列順序作為針測路徑,由於不符合比對結果者不會在空白針測路徑檔中,因此不會有多餘的移動行程、或無意義的接觸針測動作,而產生最適合該晶圓的最佳化路徑、或最符合客戶需求的客製化路徑,成為最有效率的針測路徑。 After all parameter conditions are set, as shown in step (f), the contact condition comparison process is entered, and the condition identification module 5 is used to determine the testable points at each coordinate position one by one according to the priority of the movement direction, and conduct the bare chip characteristics and contact Comparison of conditions, if the comparison result does not match, search for the testable point at the next coordinate position, if the comparison result matches, use the file creation module 6 to generate a blank needle test path file, and match the comparison result The coordinate position and the characteristics of the die are written into the blank probe path file, and then the testable point at the next coordinate position is searched and the comparison operation is repeated until the testable points at all coordinate positions are searched. In this way, the final needle measurement path is based on the order of coordinate positions in the blank needle measurement path file. Since those who do not meet the comparison results will not be in the blank needle measurement path file, there will be no redundant ones. The moving stroke, or meaningless contact probing action, generates the optimal path that is most suitable for the wafer, or the customized path that best meets the customer's needs, becoming the most efficient probing path.

舉例而言,如第五圖所示,延續前述裸晶1~4利用晶圓圖讀取模組1定義的座標位置,乃於圖中標示裸晶1~9、兩個晶圓標註點(M)、一個晶圓閃避點(S)、及一個晶圓不測點(N)之編排路徑,其中晶圓標註點(M)與晶圓不測點(N)乃為了路徑優化之目的,仍將其規劃於移動路徑中,但不做停留不進行針測,而晶圓閃避點(S)為了裸晶及設備安全考量進行路徑迴避。此外,由於所有符合比對結果的座標位置之可測試點,皆寫入同一個空白針測路徑檔中,可縮短處理器運算時在不同檔案中搜尋資料的時間,也可縮短路徑編排過程所需的時間,由於包括待檢測項目等相關資料也都寫在同一個空白針測路徑檔中,故即使某一裸晶具有複數個待檢測項目,也可以僅經過一次該裸晶而一次性完成所有 待檢測項目,而大幅節省時間。 For example, as shown in the fifth figure, the coordinate positions defined by the wafer map reading module 1 are continued for die 1 to 4 mentioned above, and die 1 to 9 and two wafer marking points are marked in the figure ( M), a wafer avoidance point (S), and a wafer failure point (N). The wafer marking point (M) and the wafer failure point (N) are for the purpose of path optimization and will still be It is planned in the moving path, but does not stop or conduct needle testing. The wafer avoidance point (S) avoids the path for the safety of the bare chip and equipment. In addition, since all testable points that match the coordinate positions of the comparison results are written into the same blank needle measurement path file, it can shorten the time for the processor to search for data in different files during operation, and also shorten the time spent in the path arrangement process. The time required, since the related information including the items to be tested are also written in the same blank test path file, so even if a certain die has multiple items to be tested, it can be completed at one time by passing the die only once. all Items to be inspected, greatly saving time.

再請同時配合參閱第六圖所示,係為本發明再一較佳實施例之實施示意圖,由圖中可清楚看出,本實施例與上述實施例為大同小異,僅於該路徑方向設定單元3係資訊連結一路徑起點設定單元31,並該路徑產生系統具有一資訊連結該晶圓圖讀取模組1之統計單元7、及一資訊連結該條件辨識模組5及該檔案建立模組6之分析單元8。如果是針對單一個晶圓做針測,其路徑起點是可以任意選擇的,但若對多個晶圓做針測時,針測路徑起點則可根據測站位置而定的,以更順利的連結到下一個針測點,如此可以取得更有效率的路徑,故使用者可以利用路徑起點設定單元31對每一個待測晶圓的針測路徑起點進行設定,以由待測晶圓的座標位置中選定其中之一作為該待測晶圓的路徑起點。另外,由於接觸條件的設定差異會導致路徑結果完全不同,故可利用統計單元7計算每個路徑與裸晶數量相關之統計資料進行統計列表,例如圖中Summary Table所示之路徑方向(Direction)、起點座標(Start Coordinate(X,Y))、已測試裸晶數量(Test Die Count)、接觸裸晶數量(Touch Down Count)、實測裸晶數量(Actual Test Die Count)、未測裸晶數量(Loss Die Count)、未測率(Loss Rate(%)),以供使用者檢視、比對,進而從各測試路徑中選擇最適合的路徑,而分析單元8則會將每次路徑編排的時間標示在一側,供使用者參考。 Please also refer to the sixth figure, which is a schematic diagram of another preferred embodiment of the present invention. It can be clearly seen from the figure that this embodiment is similar to the above-mentioned embodiment, except that the path direction setting unit 3 is an information link to a path starting point setting unit 31, and the path generation system has an information link to the statistics unit 7 of the wafer map reading module 1, and an information link to the condition identification module 5 and the file creation module Analysis unit 8 of 6. If the needle test is performed on a single wafer, the starting point of the path can be selected arbitrarily. However, if the needle test is performed on multiple wafers, the starting point of the needle test path can be determined according to the position of the measuring station, so as to achieve a smoother process. Connecting to the next probe point, a more efficient path can be obtained. Therefore, the user can use the path starting point setting unit 31 to set the starting point of the probe path for each wafer to be tested, so as to use the coordinates of the wafer to be tested. Select one of the positions as the starting point of the path for the wafer to be tested. In addition, since the difference in setting of contact conditions will lead to completely different path results, the statistical unit 7 can be used to calculate the statistical data related to the number of die for each path and make a statistical list, such as the path direction (Direction) shown in the Summary Table in the figure. , Start Coordinate (X, Y), Test Die Count, Touch Down Count, Actual Test Die Count, and Untested Die Count (Loss Die Count) and untested rate (Loss Rate (%)) for users to view and compare, and then select the most suitable path from each test path, and the analysis unit 8 will arrange the The time is marked on one side for user reference.

惟,以上所述僅為本發明之較佳實施例而已,非因此即侷限本發明之專利範圍,故舉凡運用本發明說明書及圖式內容所為之簡易修飾及等效結構變化,均應同理包含於本發明之專利範圍內,合予陳明。 However, the above descriptions are only preferred embodiments of the present invention, and do not limit the patent scope of the present invention. Therefore, any simple modifications and equivalent structural changes made by using the description and drawings of the present invention should be treated in the same way. It is included in the patent scope of the present invention and is hereby stated.

綜上所述,本發明之晶圓針測路徑產生系統及其方法於使用時,為確實能達到其功效及目的,故本發明誠為一實用性優異之發明,為符合發明專利之申請要件,爰依法提出申請,盼 審委早日賜准本發明,以保障發明人之辛苦發明,倘若 鈞局審委有任何稽疑,請不吝來函指示,發明人定當竭力配合,實感德便。 In summary, the wafer probe path generation system and method of the present invention can indeed achieve its effects and purposes when used. Therefore, the present invention is an invention with excellent practicality and meets the application requirements for an invention patent. , I have filed an application in accordance with the law, and hope that the review committee will approve the invention as soon as possible to protect the inventor's hard work. If the review committee of the Jun Bureau has any doubts, please feel free to write a letter for instructions. The inventor will try his best to cooperate, and it will be greatly appreciated.

1:晶圓圖讀取模組 1: Wafer map reading module

11:座標定義單元 11: Coordinate definition unit

2:測站圖讀取模組 2: Station map reading module

3:路徑方向設定單元 3: Path direction setting unit

4:接觸條件載入單元 4: Contact condition loading unit

5:條件辨識模組 5: Condition identification module

6:檔案建立模組 6: File creation module

Claims (8)

一種晶圓針測路徑產生系統,該路徑產生系統主要包括:一晶圓圖讀取模組,係供讀取晶圓上之所有可測試點及其裸晶特性;一座標定義單元,係資訊連結該晶圓圖讀取模組,以將該些可測試點設定於同一座標系統上並賦予一座標位置;一測站圖讀取模組,係資訊連結該座標定義單元,以將該些座標位置陣列化標記,並計算出各該可測試點間的相對位置關係;一路徑方向設定單元,係供設定各該座標位置間的移動方向優先順序;一接觸條件載入單元,係針對該些可測試點載入至少一接觸條件;一條件辨識模組,係根據該移動方向優先順序逐一對各該座標位置之可測試點,進行該裸晶特性與該接觸條件之比對;一檔案建立模組,供產生一空白針測路徑檔,並資訊連結該條件辨識模組,以將比對結果符合之該座標位置及該裸晶特性,寫入該空白針測路徑檔中;及一分析單元,係資訊連結該條件辨識模組及該檔案建立模組。 A wafer probe path generation system. The path generation system mainly includes: a wafer map reading module for reading all testable points on the wafer and its die characteristics; a coordinate definition unit for information Connect the wafer map reading module to set the testable points on the same coordinate system and assign a coordinate position; a station map reading module is information-connected to the coordinate definition unit to set the test points The coordinate positions are arrayed and marked, and the relative position relationship between the testable points is calculated; a path direction setting unit is used to set the priority order of the movement direction between the coordinate positions; a contact condition loading unit is used for the Some testable points are loaded with at least one contact condition; a condition identification module compares the characteristics of the die with the contact condition for each testable point at the coordinate position according to the priority order of the movement direction; a file Establish a module to generate a blank probing path file, and connect the information to the condition identification module to write the coordinate position and the die characteristics that the comparison result matches into the blank probing path file; and a The analysis unit is an information link between the condition identification module and the file creation module. 如申請專利範圍第1項所述之晶圓針測路徑產生系統,其中該路徑方向設定單元係資訊連結一路徑起點設定單元。 For example, in the wafer probing path generation system described in item 1 of the patent application, the path direction setting unit is information-linked to a path starting point setting unit. 如申請專利範圍第1項所述之晶圓針測路徑產生系統,其中該路徑產生系統具有一資訊連結該晶圓圖讀取模組之統計單元。 The wafer probing path generation system described in item 1 of the patent application, wherein the path generation system has a statistical unit that is information-linked to the wafer map reading module. 如申請專利範圍第1項所述之晶圓針測路徑產生系統,其中該裸晶特性係為正常裸晶、免測試裸晶、需迴避裸晶、或不可測試裸晶其中之一者,而該接觸條件係為允許接觸免測試裸晶、允許接觸需迴避裸晶、允許接觸或超過晶圓邊界、允許全站測試、或限定裸晶最大接觸次數其中之一者。 For example, the wafer probing path generation system described in item 1 of the patent application scope, wherein the characteristics of the die are one of normal die, test-free die, need-to-avoid die, or untestable die, and The contact conditions are one of allowing contact with the test-free die, allowing contact with the bare die that needs to be avoided, allowing contact with or beyond the wafer boundary, allowing full site testing, or limiting the maximum number of contacts with the die. 一種晶圓針測路徑產生方法,其主要包括:(a)利用一晶圓圖讀取模組,供讀取晶圓上之所有可測試點及其裸晶特性;(b)利用一資訊連結該晶圓圖讀取模組之座標定義單元,將該些可測試點設定於同一座標系統上並賦予一座標位置;(c)利用一資訊連結該座標定義單元之測站圖讀取模組,將該些座標位置陣列化標記,並計算出各該可測試點間的相對位置關係;(d)利用一路徑方向設定單元,設定各該座標位置間的移動方向優先順序; (e)利用一接觸條件載入單元,針對該些可測試點載入至少一接觸條件;(f)利用一條件辨識模組,根據該移動方向優先順序逐一對各該座標位置之可測試點,進行該裸晶特性與該接觸條件之比對;(g)若比對結果不符合,則回到步驟(f)搜尋下一個座標位置之可測試點,若比對結果符合,則進入步驟(h);(h)利用一檔案建立模組,產生一空白針測路徑檔,並將比對結果符合之該座標位置及該裸晶特性,寫入該空白針測路徑檔中;(i)回到步驟(f)搜尋下一個座標位置之可測試點,直到搜尋完畢所有座標位置之可測試點;及(j)利用資訊連結該條件辨識模組及該檔案建立模組之分析單元,分析產生路經所需時間。 A method for generating a wafer probe path, which mainly includes: (a) using a wafer map reading module to read all testable points on the wafer and its die characteristics; (b) using an information link The coordinate definition unit of the wafer map reading module sets the testable points on the same coordinate system and assigns them a coordinate position; (c) uses an information link to the station map reading module of the coordinate definition unit , mark the coordinate positions in an array, and calculate the relative position relationship between the testable points; (d) use a path direction setting unit to set the priority of the movement direction between the coordinate positions; (e) Use a contact condition loading unit to load at least one contact condition for the testable points; (f) Use a condition identification module to load the testable points of each coordinate position one by one according to the priority order of the movement direction , compare the characteristics of the die and the contact conditions; (g) If the comparison results are not consistent, return to step (f) to search for the testable point at the next coordinate position. If the comparison results are consistent, proceed to step (h); (h) Use a file to create a module to generate a blank probe path file, and write the coordinate position and die characteristics that the comparison result matches into the blank probe path file; (i ) Return to step (f) to search for the testable point at the next coordinate position until all testable points at the coordinate position are searched; and (j) use information to link the analysis unit of the condition identification module and the file creation module, Analyze the time required to generate the route. 如申請專利範圍第5項所述之晶圓針測路徑產生方法,其中執行步驟(d)後乃進入步驟(d1),利用一路徑起點設定單元,由該些座標位置中選定其中之一作為路徑起點。 For example, in the wafer probing path generation method described in item 5 of the patent application, after executing step (d), step (d1) is entered, and a path starting point setting unit is used to select one of the coordinate positions as the The starting point of the path. 如申請專利範圍第5項所述之晶圓針測路徑產生方法,其中執行步驟(j)時,乃同時利用一資訊連結該晶圓圖讀取模組之統計單元,計算與裸晶數量相關之統計資料。 For example, in the wafer probing path generation method described in Item 5 of the patent application, when performing step (j), an information is used to connect the statistical unit of the wafer map reading module to calculate the correlation with the number of die statistics. 如申請專利範圍第5項所述之晶圓針測路徑產生方法,其中該裸晶特性係為正常裸晶、免測試裸晶、需迴避裸晶、或不可測試裸晶其中之一者,而該接觸條件係為允許接觸免測試裸晶、允許接觸需迴避裸晶、允許接觸或超過晶圓邊界、允許全站測試、或限定裸晶最大接觸次數其中之一者。 For example, in the wafer probing path generation method described in item 5 of the patent application, the characteristics of the die are one of a normal die, a test-free die, a need-to-avoid die, or an untestable die, and The contact conditions are one of allowing contact with the test-free die, allowing contact with the bare die that needs to be avoided, allowing contact with or beyond the wafer boundary, allowing full site testing, or limiting the maximum number of contacts with the die.
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