TWI833661B - Capacitor assembly package structure - Google Patents

Capacitor assembly package structure Download PDF

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TWI833661B
TWI833661B TW112122083A TW112122083A TWI833661B TW I833661 B TWI833661 B TW I833661B TW 112122083 A TW112122083 A TW 112122083A TW 112122083 A TW112122083 A TW 112122083A TW I833661 B TWI833661 B TW I833661B
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conductive
outermost
layer
bottom electrode
internal
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藍上哲
賴雨琁
馬碩言
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鈺邦科技股份有限公司
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Abstract

The present invention provides a capacitor assembly package structure, which includes a capacitor assembly, a first inner conductive structure, a second inner conductive structure, an insulating package body, a first bottom electrode structure, a second bottom electrode structure, a first outermost strengthening structure and a second outermost strengthening structure. The capacitor assembly includes a plurality of capacitor elements electrically connected to each other. Each capacitor element has a positive portion and a negative portion. The positive portion of each capacitor element can be electrically connected to the first bottom electrode structure through the first inner conductive structure, so that a first shortest conductive path is formed between the positive portion of each capacitor element and the first bottom electrode structure. The negative portion of each capacitor element can be electrically connected to the second bottom electrode structure through the second inner conductive structure, so that a second shortest conductive path is formed between the negative portion of each capacitor element and the second bottom electrode structure.

Description

電容器組件封裝結構Capacitor component packaging structure

本發明涉及一種電容器組件封裝結構,特別是涉及一種具有最短導電路徑的電容器組件封裝結構。The present invention relates to a capacitor component packaging structure, and in particular to a capacitor component packaging structure with the shortest conductive path.

電容器已廣泛地被使用於消費性家電用品、電腦主機板及其周邊、電源供應器、通訊產品、及汽車等的基本元件,其主要的作用包括濾波、旁路、整流、耦合、去耦、轉相等,以成為電子產品中不可缺少的元件之一。依照不同的材質及用途,電容器包括鋁質電解電容、鉭質電解電容、積層陶瓷電容、薄膜電容等。先前技術中,固態電解電容器具有小尺寸、大電容量、頻率特性優越等優點,而可被應用於中央處理器的電源電路的解耦合作用上。一般而言,可利用多個電容器單元的堆疊,而形成高電容量的固態電解電容器,現前技術中的堆疊式固態電解電容器包括多個電容器單元與導線架,每一電容器單元包括陽極部、陰極部與絕緣部,並且絕緣部會使陽極部與陰極部彼此電性絕緣。特別的是,電容器單元的陰極部會彼此堆疊,並且藉由在相鄰的兩個電容器單元之間設置導電體層,以使多個電容器單元之間能夠彼此電性連接。然而,現有技術中的堆疊式電容器仍然具有可改善空間。Capacitors have been widely used in consumer home appliances, computer motherboards and peripherals, power supplies, communication products, and basic components of automobiles. Their main functions include filtering, bypassing, rectification, coupling, decoupling, To become one of the indispensable components in electronic products. According to different materials and uses, capacitors include aluminum electrolytic capacitors, tantalum electrolytic capacitors, laminated ceramic capacitors, film capacitors, etc. In the prior art, solid electrolytic capacitors have the advantages of small size, large capacitance, and superior frequency characteristics, and can be applied to the decoupling function of the power circuit of the central processor. Generally speaking, a high-capacitance solid electrolytic capacitor can be formed by stacking multiple capacitor units. The stacked solid electrolytic capacitor in the current technology includes multiple capacitor units and a lead frame. Each capacitor unit includes an anode portion, The cathode part and the insulating part, and the insulating part will electrically insulate the anode part and the cathode part from each other. In particular, the cathode portions of the capacitor units are stacked on each other, and a conductor layer is disposed between two adjacent capacitor units so that the plurality of capacitor units can be electrically connected to each other. However, there is still room for improvement in stacked capacitors in the prior art.

本發明所欲解決之問題在於,針對現有技術的不足提供一種電容器組件封裝結構,以使得每一電容器素子的正極部與第一底端電極結構之間形成一第一最短導電路徑,且使得每一電容器素子的負極部與第二底端電極結構之間形成一第二最短導電路徑。The problem to be solved by the present invention is to provide a capacitor component packaging structure in view of the shortcomings of the existing technology, so that a first shortest conductive path is formed between the positive electrode portion of each capacitor element and the first bottom electrode structure, and each capacitor element is A second shortest conductive path is formed between the negative electrode portion of a capacitor element and the second bottom electrode structure.

為了解決上述的問題,本發明所採用的其中一技術手段是提供一種電容器組件封裝結構,其包括:一電容器組件、一第一內部導電結構、一第二內部導電結構、一絕緣封裝體、一第一底端電極結構、一第二底端電極結構、一第一最外側強化結構以及一第二最外側強化結構。電容器組件包括彼此電性連接的多個電容器素子,且每一電容器素子具有一正極部以及一負極部。第一內部導電結構電性接觸每一電容器素子的正極部,且第一內部導電結構具有一第一裸露底端。第二內部導電結構電性接觸每一電容器素子的負極部,且第二內部導電結構具有一第二裸露底端。絕緣封裝體被配置以用於包覆電容器組件、第一內部導電結構以及第二內部導電結構,且第一內部導電結構的第一裸露底端以及第二內部導電結構的第二裸露底端從絕緣封裝體的一底端裸露。第一底端電極結構設置在絕緣封裝體的底端上且電性接觸第一內部導電結構的第一裸露底端。第二底端電極結構設置在絕緣封裝體的底端上且電性接觸第二內部導電結構的第二裸露底端。第一最外側強化結構鄰近第一底端電極結構且設置在絕緣封裝體的一第一側面上。第二最外側強化結構鄰近第二底端電極結構且設置在絕緣封裝體的一第二側面上。其中,每一電容器素子的正極部透過第一內部導電結構以電性連接於第一底端電極結構,藉此以使得每一電容器素子的正極部與第一底端電極結構之間形成一第一最短導電路徑;其中,每一電容器素子的負極部透過第二內部導電結構以電性連接於第二底端電極結構,藉此以使得每一電容器素子的負極部與第二底端電極結構之間形成一第二最短導電路徑;其中,第一最短導電路徑不需要經過第一最外側強化結構,且第二最短導電路徑不需要經過第二最外側強化結構;其中,第一最外側強化結構被配置以用於提供與外界接觸的一第一最外側裸露表面,且第二最外側強化結構被配置以用於提供與外界接觸的一第二最外側裸露表面。In order to solve the above problems, one of the technical means adopted by the present invention is to provide a capacitor component packaging structure, which includes: a capacitor component, a first internal conductive structure, a second internal conductive structure, an insulating package, and an A first bottom electrode structure, a second bottom electrode structure, a first outermost strengthening structure and a second outermost strengthening structure. The capacitor component includes a plurality of capacitor elements electrically connected to each other, and each capacitor element has a positive electrode part and a negative electrode part. The first internal conductive structure is in electrical contact with the positive electrode portion of each capacitor element, and the first internal conductive structure has a first exposed bottom end. The second internal conductive structure is in electrical contact with the negative electrode portion of each capacitor element, and the second internal conductive structure has a second exposed bottom end. The insulating package is configured to encapsulate the capacitor component, the first inner conductive structure and the second inner conductive structure, and the first exposed bottom end of the first inner conductive structure and the second exposed bottom end of the second inner conductive structure are from One bottom end of the insulating package is exposed. The first bottom electrode structure is disposed on the bottom end of the insulating package and electrically contacts the first exposed bottom end of the first internal conductive structure. The second bottom electrode structure is disposed on the bottom end of the insulating package and electrically contacts the second exposed bottom end of the second internal conductive structure. The first outermost strengthening structure is adjacent to the first bottom electrode structure and is disposed on a first side of the insulating package. The second outermost reinforcement structure is adjacent to the second bottom electrode structure and is disposed on a second side of the insulating package. Wherein, the positive electrode portion of each capacitor element is electrically connected to the first bottom electrode structure through the first internal conductive structure, thereby forming a first bottom electrode structure between the positive electrode portion of each capacitor element and the first bottom electrode structure. A shortest conductive path; wherein the negative electrode portion of each capacitor element is electrically connected to the second bottom electrode structure through the second internal conductive structure, thereby making the negative electrode portion of each capacitor element and the second bottom electrode structure A second shortest conductive path is formed between them; wherein, the first shortest conductive path does not need to pass through the first outermost reinforced structure, and the second shortest conductive path does not need to pass through the second outermost reinforced structure; wherein, the first outermost reinforced structure The structure is configured to provide a first outermost exposed surface in contact with the outside world, and the second outermost reinforced structure is configured to provide a second outermost exposed surface in contact with the outside world.

為了解決上述的問題,本發明所採用的另外一技術手段是提供一種電容器組件封裝結構,其包括:一電容器組件、一第一內部導電結構、一第二內部導電結構、一絕緣封裝體、一第一底端電極結構、一第二底端電極結構、一第一最外側強化結構以及一第二最外側強化結構。電容器組件包括彼此電性連接的多個電容器素子,且每一電容器素子具有一正極部以及一負極部。第一內部導電結構電性接觸每一電容器素子的正極部,且第一內部導電結構具有一第一裸露底端。第二內部導電結構電性接觸每一電容器素子的負極部,且第二內部導電結構具有一第二裸露底端。絕緣封裝體被配置以用於包覆電容器組件、第一內部導電結構以及第二內部導電結構,且第一內部導電結構的第一裸露底端以及第二內部導電結構的第二裸露底端從絕緣封裝體的一底端裸露。第一底端電極結構設置在絕緣封裝體的底端上且電性接觸第一內部導電結構的第一裸露底端。第二底端電極結構設置在絕緣封裝體的底端上且電性接觸第二內部導電結構的第二裸露底端。第一最外側強化結構鄰近第一底端電極結構且設置在絕緣封裝體的一第一側面上。第二最外側強化結構鄰近第二底端電極結構且設置在絕緣封裝體的一第二側面上。In order to solve the above problems, another technical means adopted by the present invention is to provide a capacitor component packaging structure, which includes: a capacitor component, a first internal conductive structure, a second internal conductive structure, an insulating package, and an A first bottom electrode structure, a second bottom electrode structure, a first outermost strengthening structure and a second outermost strengthening structure. The capacitor component includes a plurality of capacitor elements electrically connected to each other, and each capacitor element has a positive electrode part and a negative electrode part. The first internal conductive structure is in electrical contact with the positive electrode portion of each capacitor element, and the first internal conductive structure has a first exposed bottom end. The second internal conductive structure is in electrical contact with the negative electrode portion of each capacitor element, and the second internal conductive structure has a second exposed bottom end. The insulating package is configured to encapsulate the capacitor component, the first inner conductive structure and the second inner conductive structure, and the first exposed bottom end of the first inner conductive structure and the second exposed bottom end of the second inner conductive structure are from One bottom end of the insulating package is exposed. The first bottom electrode structure is disposed on the bottom end of the insulating package and electrically contacts the first exposed bottom end of the first internal conductive structure. The second bottom electrode structure is disposed on the bottom end of the insulating package and electrically contacts the second exposed bottom end of the second internal conductive structure. The first outermost strengthening structure is adjacent to the first bottom electrode structure and is disposed on a first side of the insulating package. The second outermost reinforcement structure is adjacent to the second bottom electrode structure and is disposed on a second side of the insulating package.

本發明的其中一有益效果在於,本發明所提供的一種電容器組件封裝結構,其能通過“第一內部導電結構電性接觸每一電容器素子的正極部,且第一內部導電結構具有一第一裸露底端”、“第二內部導電結構電性接觸每一電容器素子的負極部,且第二內部導電結構具有一第二裸露底端” 、“第一底端電極結構設置在絕緣封裝體的底端上且電性接觸第一內部導電結構的第一裸露底端” 、“第二底端電極結構設置在絕緣封裝體的底端上且電性接觸第二內部導電結構的第二裸露底端” 、“第一最外側強化結構鄰近第一底端電極結構且設置在絕緣封裝體的一第一側面上”以及“第二最外側強化結構鄰近第二底端電極結構且設置在絕緣封裝體的一第二側面上”的技術方案,以使得每一電容器素子的正極部可以透過第一內部導電結構以電性連接於第一底端電極結構(藉此以使得每一電容器素子的正極部與第一底端電極結構之間形成一第一最短導電路徑),且使得每一電容器素子的負極部可以透過第二內部導電結構以電性連接於第二底端電極結構(藉此以使得每一電容器素子的負極部與第二底端電極結構之間形成一第二最短導電路徑)。One of the beneficial effects of the present invention is that the capacitor component packaging structure provided by the present invention can electrically contact the positive electrode portion of each capacitor element through "a first internal conductive structure, and the first internal conductive structure has a first "Exposed bottom end", "The second internal conductive structure is in electrical contact with the negative electrode portion of each capacitor element, and the second internal conductive structure has a second exposed bottom end", "The first bottom electrode structure is disposed on the insulating package "The second bottom electrode structure is disposed on the bottom end of the insulating package and electrically contacts the second exposed bottom of the second internal conductive structure." end", "the first outermost reinforcing structure is adjacent to the first bottom electrode structure and is disposed on a first side of the insulating package" and "the second outermost reinforcing structure is adjacent to the second bottom electrode structure and is disposed on the insulating package "on a second side of the body" technical solution, so that the positive electrode portion of each capacitor element can be electrically connected to the first bottom electrode structure through the first internal conductive structure (thereby so that the positive electrode portion of each capacitor element forming a first shortest conductive path between the first and first bottom electrode structures), and allowing the negative electrode portion of each capacitor element to be electrically connected to the second bottom electrode structure through the second internal conductive structure (thereby Such that a second shortest conductive path is formed between the negative electrode portion of each capacitor element and the second bottom electrode structure).

為使能進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and illustration and are not used to limit the present invention.

以下是通過特定的具體實施例來說明本發明所公開有關“電容器組件封裝結構”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以實行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本發明的構思下進行各種修改與變更。另外,需事先聲明的是,本發明的圖式僅為簡單示意說明,並非依實際尺寸的描繪。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。The following is a specific embodiment to illustrate the implementation of the "capacitor component packaging structure" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, it should be stated in advance that the drawings of the present invention are only simple schematic illustrations and are not depictions based on actual dimensions. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of the present invention. In addition, the term "or" used in this article shall include any one or combination of more of the associated listed items depending on the actual situation.

[第一實施例][First Embodiment]

參閱圖1至圖3所示,本發明第一實施例提供一種電容器組件封裝結構Z(例如固態電解電容器,但本發明不以此為限),其包括:一電容器組件1、一第一內部導電結構2、一第二內部導電結構3、一絕緣封裝體4、一第一底端電極結構5(例如第一導線架結構)、一第二底端電極結構6(例如第二導線架結構)、一第一最外側強化結構7(例如第一輔助功能結構)以及一第二最外側強化結構8(例如第二助輔助功能結構)。Referring to FIGS. 1 to 3 , a first embodiment of the present invention provides a capacitor component packaging structure Z (such as a solid electrolytic capacitor, but the present invention is not limited thereto), which includes: a capacitor component 1, a first internal Conductive structure 2, a second internal conductive structure 3, an insulating package 4, a first bottom electrode structure 5 (for example, a first lead frame structure), a second bottom electrode structure 6 (for example, a second lead frame structure) ), a first outermost strengthening structure 7 (for example, a first auxiliary function structure) and a second outermost strengthening structure 8 (for example, a second auxiliary function structure).

首先,如圖1所示,電容器組件1包括彼此電性連接的多個電容器素子10(或是電容器單元),並且每一電容器素子10具有一正極部10P(或者陽極部)以及一負極部10N(或者陰極部)。舉例來說,多個電容器素子10可以依序堆疊,並且每一電容器素子10可以包括一金屬箔片101(例如Al箔片)、一絕緣環繞層102、一導電高分子層103、一碳膠層104以及一銀膠層105。更進一步來說,絕緣環繞層102環繞地設置在金屬箔片101上,導電高分子層103包覆金屬箔片101的一部分且接觸絕緣環繞層102,碳膠層104包覆導電高分子層103且接觸絕緣環繞層102,並且銀膠層105包覆碳膠層104且接觸絕緣環繞層102。另外,金屬箔片101的兩相反表面上形成有介電層(或是氧化層),並且介電層具有介於5與300之間的介電常數(dielectric constant),或者稱為相對介電常數(relative permittivity)。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。First, as shown in FIG. 1 , the capacitor component 1 includes a plurality of capacitor elements 10 (or capacitor units) that are electrically connected to each other, and each capacitor element 10 has a positive electrode portion 10P (or anode portion) and a negative electrode portion 10N. (or cathode part). For example, multiple capacitor elements 10 can be stacked sequentially, and each capacitor element 10 can include a metal foil 101 (such as an Al foil), an insulating surrounding layer 102, a conductive polymer layer 103, and a carbon glue. layer 104 and a silver glue layer 105. Furthermore, the insulating surrounding layer 102 is arranged around the metal foil 101 , the conductive polymer layer 103 covers a part of the metal foil 101 and contacts the insulating surrounding layer 102 , and the carbon glue layer 104 covers the conductive polymer layer 103 and contacts the insulating surrounding layer 102 , and the silver glue layer 105 covers the carbon glue layer 104 and contacts the insulating surrounding layer 102 . In addition, a dielectric layer (or oxide layer) is formed on two opposite surfaces of the metal foil 101, and the dielectric layer has a dielectric constant between 5 and 300, or is called a relative dielectric. constant(relative permittivity). However, the above examples are only one of the possible embodiments and are not intended to limit the present invention.

再者,配合圖1與圖2所示,第一內部導電結構2電性接觸每一電容器素子10的正極部10P,並且第一內部導電結構2具有一第一裸露底端2000。另外,第二內部導電結構3電性接觸每一電容器素子10的負極部10N,並且第二內部導電結構3具有一第二裸露底端3000。更進一步來說,每一電容器素子10的正極部10P具有一側表面,並且第一內部導電結構2電性接觸(例如透過導電膠或者不需透過其它額外的導電介質)每一電容器素子10的正極部10P的側表面。另外,每一電容器素子10的負極部10N具有一側表面,並且第二內部導電結構3電性接觸(例如透過導電膠或者不需透過其它額外的導電介質)每一電容器素子10的負極部10N的側表面。舉例來說,依據不同的需求,第一內部導電結構2可以是預先製作完成的一第一內部導電片(例如預先製作完成的銅片、鋁片或者任何材料所製成的導電片)或者透過固化而形成的一第一內側導電層(例如先透過浸漬法以形成一導電材料後,再對導電材料進行固化處理後以形成一導電層,所以第一內部導電層可以是銀層、銅層或者任何材料所製成的導電層),並且第二內部導電結構3可以是預先製作完成的一第二內部導電片(例如預先製作完成的銅片、鋁片或者任何材料所製成的導電片)或者透過固化而形成的一第二內側導電層(例如先透過浸漬法以形成一導電材料後,再對導電材料進行固化處理後以形成一導電層,第二內部導電層可以是銀層、銅層或者任何材料所製成的導電層)。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。Furthermore, as shown in FIGS. 1 and 2 , the first internal conductive structure 2 is in electrical contact with the positive electrode portion 10P of each capacitor element 10 , and the first internal conductive structure 2 has a first exposed bottom end 2000 . In addition, the second internal conductive structure 3 is electrically in contact with the negative electrode portion 10N of each capacitor element 10, and has a second exposed bottom end 3000. Furthermore, the positive electrode portion 10P of each capacitor element 10 has one side surface, and the first internal conductive structure 2 is in electrical contact (for example, through conductive glue or without passing through other additional conductive media) of each capacitor element 10 The side surface of the positive electrode portion 10P. In addition, the negative electrode portion 10N of each capacitor element 10 has one side surface, and the second internal conductive structure 3 is in electrical contact (for example, through conductive glue or without other additional conductive media) with the negative electrode portion 10N of each capacitor element 10 side surface. For example, depending on different requirements, the first internal conductive structure 2 can be a pre-made first internal conductive sheet (such as a pre-made copper sheet, aluminum sheet or conductive sheet made of any material) or through A first inner conductive layer formed by curing (for example, first forming a conductive material through dipping method, and then curing the conductive material to form a conductive layer, so the first inner conductive layer can be a silver layer, a copper layer or a conductive layer made of any material), and the second internal conductive structure 3 can be a pre-fabricated second internal conductive sheet (such as a pre-fabricated copper sheet, aluminum sheet, or a conductive sheet made of any material). ) or a second inner conductive layer formed by curing (for example, first through dipping to form a conductive material, and then curing the conductive material to form a conductive layer. The second inner conductive layer can be a silver layer, Copper layer or conductive layer made of any material). However, the above examples are only one of the possible embodiments and are not intended to limit the present invention.

此外,如圖2所示,絕緣封裝體4可以被配置以用於包覆電容器組件1、第一內部導電結構2以及第二內部導電結構3,並且第一內部導電結構2的第一裸露底端2000以及第二內部導電結構3的第二裸露底端3000會從絕緣封裝體4的一底端4000裸露。也就是說,多個電容器素子10可以完全被包覆在絕緣封裝體4的內部,第一內部導電結構2除了第一裸露底端2000之外可以完全被包覆在絕緣封裝體4的內部,並且第二內部導電結構3除了第二裸露底端3000之外可以完全被包覆在絕緣封裝體4的內部。舉例來說,依據不同的需求,第一內部導電結構2可以垂直地或者傾斜地接觸第一底端電極結構5的一頂端,並且第二內部導電結構3可以垂直地或者傾斜地接觸第二底端電極結構6的一頂端。另外,依據不同的需求,絕緣封裝體4可以是矽膠(silicon resin)、環氧樹脂(epoxy resin)或者任何的絕緣封裝材料。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。Furthermore, as shown in FIG. 2 , the insulating package 4 may be configured to cover the capacitor component 1 , the first inner conductive structure 2 and the second inner conductive structure 3 , and the first exposed bottom of the first inner conductive structure 2 The end 2000 and the second exposed bottom end 3000 of the second internal conductive structure 3 will be exposed from a bottom end 4000 of the insulating package 4 . That is to say, the plurality of capacitor elements 10 can be completely covered inside the insulating package 4, and the first internal conductive structure 2 can be completely covered inside the insulating package 4 except for the first exposed bottom end 2000. And the second inner conductive structure 3 may be completely covered inside the insulating package 4 except for the second exposed bottom end 3000 . For example, according to different requirements, the first internal conductive structure 2 can contact a top end of the first bottom electrode structure 5 vertically or obliquely, and the second internal conductive structure 3 can contact the second bottom electrode vertically or obliquely. A top of structure 6. In addition, according to different requirements, the insulating packaging body 4 can be silicon resin, epoxy resin or any insulating packaging material. However, the above examples are only one of the possible embodiments and are not intended to limit the present invention.

另外,如圖2所示,第一底端電極結構5設置在絕緣封裝體4的底端4000上且電性接觸第一內部導電結構2的第一裸露底端2000,並且第二底端電極結構6設置在絕緣封裝體4的底端4000上且電性接觸第二內部導電結構3的第二裸露底端3000。更進一步來說,每一電容器素子10的正極部10P可以透過第一內部導電結構2以電性連接於第一底端電極結構5,藉此以使得每一電容器素子10的正極部10P與第一底端電極結構5之間形成一第一最短導電路徑(也就是一第一垂直導電路徑,其位於每一電容器素子10的正極部10P與第一底端電極結構5之間)。另外,每一電容器素子10的負極部10N可以透過第二內部導電結構3以電性連接於第二底端電極結構6,藉此以使得每一電容器素子10的負極部10N與第二底端電極結構6之間形成一第二最短導電路徑(也就是一第二垂直導電路徑,其位於每一電容器素子10的負極部10N與第二底端電極結構6之間)。值得注意的是,第一最短導電路徑不需要經過第一最外側強化結構7,並且第二最短導電路徑不需要經過第二最外側強化結構8。也就是說,第一內部導電結構2不需透過第一最外側強化結構7就可以電性連接於第一底端電極結構5(或者是說,第一最短導電路徑不需要橫向外移到第一最外側強化結構7後再回到第一底端電極結構5),並且第二內部導電結構3不需透過第二最外側強化結構8就可以電性連接於第二底端電極結構6(或者是說,第二最短導電路徑不需要橫向外移到第二最外側強化結構8後再回到第二底端電極結構6)。舉例來說,第一底端電極結構5以及第二底端電極結構6兩者都只有底面會從絕緣封裝體4裸露而出,第二底端電極結構6會延伸至電容器組件封裝結構Z的中央位置附近,藉此以提升第二底端電極結構6對於多個電容器素子10的支撐力,進而有效增加電容器組件封裝結構Z的整體結構強度,並且第二底端電極結構6的底部具有可以被絕緣封裝體4所填充的一凹陷空間。第一底端電極結構5以及第二底端電極結構6可以是透過銅材料、鋁材料或者任何導電材料所製成。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。In addition, as shown in Figure 2, the first bottom electrode structure 5 is disposed on the bottom end 4000 of the insulating package 4 and electrically contacts the first exposed bottom end 2000 of the first internal conductive structure 2, and the second bottom electrode The structure 6 is disposed on the bottom end 4000 of the insulating package 4 and electrically contacts the second exposed bottom end 3000 of the second internal conductive structure 3 . Furthermore, the positive electrode portion 10P of each capacitor element 10 can be electrically connected to the first bottom electrode structure 5 through the first internal conductive structure 2, thereby allowing the positive electrode portion 10P of each capacitor element 10 to be connected to the first bottom electrode structure 5. A first shortest conductive path is formed between a bottom electrode structure 5 (that is, a first vertical conductive path, which is located between the positive electrode portion 10P of each capacitor element 10 and the first bottom electrode structure 5). In addition, the negative electrode portion 10N of each capacitor element 10 can be electrically connected to the second bottom electrode structure 6 through the second internal conductive structure 3, thereby allowing the negative electrode portion 10N of each capacitor element 10 to be connected to the second bottom terminal A second shortest conductive path is formed between the electrode structures 6 (that is, a second vertical conductive path is located between the negative electrode portion 10N of each capacitor element 10 and the second bottom electrode structure 6). It is worth noting that the first shortest conductive path does not need to pass through the first outermost reinforced structure 7 , and the second shortest conductive path does not need to pass through the second outermost reinforced structure 8 . That is to say, the first inner conductive structure 2 can be electrically connected to the first bottom electrode structure 5 without passing through the first outermost reinforcing structure 7 (or in other words, the first shortest conductive path does not need to be laterally moved outward to the first An outermost reinforced structure 7 and then returns to the first bottom electrode structure 5), and the second inner conductive structure 3 can be electrically connected to the second bottom electrode structure 6 without passing through the second outermost reinforced structure 8 ( In other words, the second shortest conductive path does not need to move laterally outward to the second outermost strengthening structure 8 and then return to the second bottom electrode structure 6). For example, only the bottom surface of both the first bottom electrode structure 5 and the second bottom electrode structure 6 will be exposed from the insulating package 4 , and the second bottom electrode structure 6 will extend to the capacitor component package structure Z. Near the central position, thereby improving the supporting force of the second bottom electrode structure 6 for the plurality of capacitor elements 10, thereby effectively increasing the overall structural strength of the capacitor component packaging structure Z, and the bottom of the second bottom electrode structure 6 has a A recessed space filled by the insulating package 4. The first bottom electrode structure 5 and the second bottom electrode structure 6 can be made of copper material, aluminum material or any conductive material. However, the above examples are only one of the possible embodiments and are not intended to limit the present invention.

再者,如圖2所示,第一最外側強化結構7鄰近第一底端電極結構5且設置在絕緣封裝體4的一第一側面4001上,並且第一底端電極結構5與第一最外側強化結構7兩者彼此分離一預定距離(或者是說,第一底端電極結構5與第一最外側強化結構7兩者互不接觸)。另外,第二最外側強化結構8鄰近第二底端電極結構6且設置在絕緣封裝體4的一第二側面4002上,並且第二底端電極結構6與第二最外側強化結構8兩者彼此分離一預定距離(或者是說,第二底端電極結構6與第二最外側強化結構8兩者互不接觸)。更進一步來說,第一最外側強化結構7可以被配置以用於提供與外界接觸的一第一最外側裸露表面7000,並且第二最外側強化結構8可以被配置以用於提供與外界接觸的一第二最外側裸露表面8000。舉例來說,第一最外側強化結構7可以是預先製作完成的一第一最外側導電片(例如預先製作完成的銅片、鋁片或者任何材料所製成的導電片)或者透過固化而形成的一第一最外側導電層(例如先透過浸漬法以形成一導電材料後,再對導電材料進行固化處理後以形成一導電層,所以第一最外側導電層可以是銀層、銅層或者任何材料所製成的導電層),並且第二最外側強化結構8可以是預先製作完成的一第二最外側導電片(例如預先製作完成的銅片、鋁片或者任何材料所製成的導電片)或者透過固化而形成的一第二最外側導電層(例如先透過浸漬法以形成一導電材料後,再對導電材料進行固化處理後以形成一導電層,所以第二最外側導電層可以是銀層、銅層或者任何材料所製成的導電層)。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。Furthermore, as shown in FIG. 2 , the first outermost reinforcement structure 7 is adjacent to the first bottom electrode structure 5 and is disposed on a first side 4001 of the insulating package 4 , and the first bottom electrode structure 5 and the first The outermost reinforcing structures 7 are separated from each other by a predetermined distance (in other words, the first bottom electrode structure 5 and the first outermost reinforcing structure 7 are not in contact with each other). In addition, the second outermost reinforcement structure 8 is adjacent to the second bottom electrode structure 6 and is disposed on a second side 4002 of the insulating package 4 , and both the second bottom electrode structure 6 and the second outermost reinforcement structure 8 They are separated from each other by a predetermined distance (in other words, the second bottom electrode structure 6 and the second outermost reinforcement structure 8 are not in contact with each other). Furthermore, the first outermost reinforced structure 7 may be configured to provide a first outermost exposed surface 7000 that is in contact with the outside world, and the second outermost reinforced structure 8 may be configured to provide a first outermost exposed surface 7000 that is in contact with the outside world. A second outermost exposed surface 8000. For example, the first outermost reinforced structure 7 may be a pre-fabricated first outermost conductive sheet (such as a pre-fabricated copper sheet, aluminum sheet or conductive sheet made of any material) or formed by solidification. A first outermost conductive layer (for example, first through a dipping method to form a conductive material, and then solidify the conductive material to form a conductive layer, so the first outermost conductive layer can be a silver layer, a copper layer or conductive layer made of any material), and the second outermost reinforced structure 8 can be a pre-made second outermost conductive sheet (such as a pre-made copper sheet, aluminum sheet or conductive sheet made of any material). sheet) or a second outermost conductive layer formed by curing (for example, first through dipping to form a conductive material, and then curing the conductive material to form a conductive layer, so the second outermost conductive layer can It is a conductive layer made of silver, copper or any material). However, the above examples are only one of the possible embodiments and are not intended to limit the present invention.

此外,配合圖2與圖3所示,當電容器組件封裝結構Z設置在一電路基板P上時,第一底端電極結構5可以透過一第一導電材料M1(例如錫球、錫膏或者任何的導電材料)以電性連接於電路基板P的一第一焊墊P101,並且第二底端電極結構6可以透過一第二導電材料M2(例如錫球、錫膏或者任何的導電材料)以電性連接於電路基板P的一第二焊墊P102。更進一步來說,如圖3所示,當電容器組件封裝結構Z設置在電路基板P上時,第一最外側強化結構7的第一最外側裸露表面7000的一部分或者全部可以被第一導電材料M1所覆蓋(也就是說,第一導電材料M1可以透過第一最外側裸露表面7000以產生一第一爬錫結構),並且第二最外側強化結構8的第二最外側裸露表面8000的一部分或者全部可以被第二導電材料M2所覆蓋(也就是說,第二導電材料M2可以透過第二最外側裸露表面8000以產生一第二爬錫結構),藉此以增加第一最外側強化結構7與第一導電材料M1的接觸面積,並且增加第二最外側強化結構8與第二導電材料M2的接觸面積。In addition, as shown in FIGS. 2 and 3 , when the capacitor component package structure Z is disposed on a circuit substrate P, the first bottom electrode structure 5 can pass through a first conductive material M1 (such as solder balls, solder paste or any other conductive material) to be electrically connected to a first pad P101 of the circuit substrate P, and the second bottom electrode structure 6 can pass through a second conductive material M2 (such as solder ball, solder paste or any conductive material). Electrically connected to a second pad P102 of the circuit substrate P. Furthermore, as shown in FIG. 3 , when the capacitor component packaging structure Z is disposed on the circuit substrate P, part or all of the first outermost exposed surface 7000 of the first outermost reinforced structure 7 may be covered with the first conductive material. M1 is covered (that is, the first conductive material M1 can penetrate the first outermost exposed surface 7000 to create a first tin climbing structure), and a part of the second outermost exposed surface 8000 of the second outermost reinforced structure 8 Or it can all be covered by the second conductive material M2 (that is, the second conductive material M2 can pass through the second outermost exposed surface 8000 to create a second tin-climbing structure), thereby increasing the first outermost strengthening structure. 7 and the first conductive material M1, and increase the contact area of the second outermost reinforced structure 8 and the second conductive material M2.

值得注意的是,舉例來說,如圖3所示,第一導電材料M1也可以被區分成“電性連接於第一底端電極結構5以及電路基板P的第一焊墊P101之間”的一第一導電部分(提供電性導通功能)以及“用於覆蓋第一最外側強化結構7的第一最外側裸露表面7000”的一第一爬錫部分(提供結構強化功能),並且第一導電材料M1的第一導電部分以及第一爬錫部分可以彼此分離或者彼此相連。另外,第二導電材料M2也可以被區分成“電性連接於第二底端電極結構6以及電路基板P的第二焊墊P102之間”的一第二導電部分(提供電性導通功能)以及“用於覆蓋第二最外側強化結構8的第二最外側裸露表面8000”的一第二爬錫部分(提供結構強化功能),並且第二導電材料M2的第二導電部分以及第二爬錫部分可以彼此分離或者彼此相連。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。It is worth noting that, for example, as shown in Figure 3, the first conductive material M1 can also be distinguished as "electrically connected between the first bottom electrode structure 5 and the first pad P101 of the circuit substrate P" A first conductive part (providing electrical conduction function) and a first tin climbing part (providing structural strengthening function) "used to cover the first outermost exposed surface 7000 of the first outermost strengthening structure 7", and The first conductive part and the first soldering part of a conductive material M1 may be separated from each other or connected to each other. In addition, the second conductive material M2 can also be divided into a second conductive part "electrically connected between the second bottom electrode structure 6 and the second pad P102 of the circuit substrate P" (providing electrical conduction function) and a second tin-climbing portion "for covering the second outermost exposed surface 8000 of the second outermost reinforcement structure 8" (providing a structural strengthening function), and the second conductive portion of the second conductive material M2 and the second tin-climbing portion The tin parts can be separated from each other or connected to each other. However, the above examples are only one of the possible embodiments and are not intended to limit the present invention.

[第二實施例][Second Embodiment]

參閱圖4所示,本發明第二實施例提供一種電容器組件封裝結構Z,其包括:一電容器組件1、一第一內部導電結構2、一第二內部導電結構3、一絕緣封裝體4、一第一底端電極結構5、一第二底端電極結構6、一第一最外側強化結構7以及一第二最外側強化結構8。由圖4與圖2的比較可知,本發明第二實施例與第一實施例最主要的差異在於:在第二實施例中,第一內部導電結構2可以貫穿多個電容器素子10的多個正極部10P,藉此以電性接觸第一底端電極結構5。舉例來說,第一內部導電結構2(例如助焊件或者助焊片)可以是利用雷射焊接方式或者其它的焊接方式,以貫穿多個電容器素子10的多個正極部10P且電性連接於多個電容器素子10的多個正極部10P。Referring to Figure 4, a second embodiment of the present invention provides a capacitor component packaging structure Z, which includes: a capacitor component 1, a first internal conductive structure 2, a second internal conductive structure 3, an insulating package 4, A first bottom electrode structure 5, a second bottom electrode structure 6, a first outermost strengthening structure 7 and a second outermost strengthening structure 8. It can be seen from the comparison between FIG. 4 and FIG. 2 that the main difference between the second embodiment of the present invention and the first embodiment is that in the second embodiment, the first internal conductive structure 2 can penetrate multiple capacitor elements 10 The positive electrode portion 10P thereby electrically contacts the first bottom electrode structure 5 . For example, the first internal conductive structure 2 (such as a soldering flux or a soldering flux) may be made by laser welding or other welding methods to penetrate and electrically connect the plurality of positive electrode portions 10P of the plurality of capacitor elements 10 to the plurality of positive electrode portions 10P of the plurality of capacitor elements 10 .

[第三實施例][Third Embodiment]

參閱圖5與圖6所示,本發明第三實施例提供一種電容器組件封裝結構Z,其包括:一電容器組件1、一第一內部導電結構2、一第二內部導電結構3、一絕緣封裝體4、一第一底端電極結構5、一第二底端電極結構6、一第一最外側強化結構7以及一第二最外側強化結構8。另外,當電容器組件封裝結構Z設置在一電路基板P上時,第一底端電極結構5可以透過一第一導電材料M1以電性連接於電路基板P的一第一焊墊P101,並且第二底端電極結構6可以透過一第二導電材料M2以電性連接於電路基板P的一第二焊墊P102。由圖5與圖2的比較,以及圖6與圖3的比較可知,本發明第三實施例與第一實施例最主要的差異在於:在第三實施例中,第一底端電極結構5與第一最外側強化結構7兩者可以彼此相連,並且第二底端電極結構6與第二最外側強化結構8兩者可以彼此相連。Referring to Figures 5 and 6, a third embodiment of the present invention provides a capacitor component packaging structure Z, which includes: a capacitor component 1, a first internal conductive structure 2, a second internal conductive structure 3, and an insulating package. body 4, a first bottom electrode structure 5, a second bottom electrode structure 6, a first outermost strengthening structure 7 and a second outermost strengthening structure 8. In addition, when the capacitor component packaging structure Z is disposed on a circuit substrate P, the first bottom electrode structure 5 can be electrically connected to a first pad P101 of the circuit substrate P through a first conductive material M1, and the third The two bottom electrode structures 6 can be electrically connected to a second pad P102 of the circuit substrate P through a second conductive material M2. From the comparison between Figure 5 and Figure 2, and the comparison between Figure 6 and Figure 3, it can be seen that the main difference between the third embodiment of the present invention and the first embodiment is that in the third embodiment, the first bottom electrode structure 5 The first outermost reinforcing structure 7 may be connected to each other, and the second bottom electrode structure 6 and the second outermost reinforcing structure 8 may be connected to each other.

更進一步來說,如圖5所示,當第一底端電極結構5與第一最外側強化結構7兩者彼此相連時,第一底端電極結構5與第一最外側強化結構7可以相互配合以形成一第一L形結構(或者一第一類似L形結構)。另外,當第二底端電極結構6與第二最外側強化結構8兩者彼此相連時,第二底端電極結構6與第二最外側強化結構8可以相互配合以形成一第二L形結構(或者一第二類似L形結構)。Furthermore, as shown in FIG. 5 , when the first bottom electrode structure 5 and the first outermost reinforcing structure 7 are connected to each other, the first bottom electrode structure 5 and the first outermost reinforcing structure 7 can be connected to each other. Cooperate to form a first L-shaped structure (or a first similar L-shaped structure). In addition, when the second bottom electrode structure 6 and the second outermost reinforcement structure 8 are connected to each other, the second bottom electrode structure 6 and the second outermost reinforcement structure 8 can cooperate with each other to form a second L-shaped structure. (Or a second similar L-shaped structure).

[第四實施例][Fourth Embodiment]

參閱圖7所示,本發明第四實施例提供一種電容器組件封裝結構Z,其包括:一電容器組件1、一第一內部導電結構2、一第二內部導電結構3、一絕緣封裝體4、一第一底端電極結構5、一第二底端電極結構6、一第一最外側強化結構7以及一第二最外側強化結構8。由圖7與圖5的比較可知,本發明第四實施例與第三實施例最主要的差異在於:在第四實施例中,第一內部導電結構2可以貫穿多個電容器素子10的多個正極部10P,藉此以電性接觸第一底端電極結構5。舉例來說,第一內部導電結構2(例如助焊件或者助焊片)可以是利用雷射焊接方式或者其它的焊接方式,以貫穿多個電容器素子10的多個正極部10P且電性連接於多個電容器素子10的多個正極部10P。Referring to Figure 7, the fourth embodiment of the present invention provides a capacitor component packaging structure Z, which includes: a capacitor component 1, a first internal conductive structure 2, a second internal conductive structure 3, an insulating package 4, A first bottom electrode structure 5, a second bottom electrode structure 6, a first outermost strengthening structure 7 and a second outermost strengthening structure 8. It can be seen from the comparison between FIG. 7 and FIG. 5 that the main difference between the fourth embodiment of the present invention and the third embodiment of the present invention is that in the fourth embodiment, the first internal conductive structure 2 can penetrate multiple capacitor elements 10 The positive electrode portion 10P thereby electrically contacts the first bottom electrode structure 5 . For example, the first internal conductive structure 2 (such as a soldering flux or a soldering flux) may be made by laser welding or other welding methods to penetrate and electrically connect the plurality of positive electrode portions 10P of the plurality of capacitor elements 10 to the plurality of positive electrode portions 10P of the plurality of capacitor elements 10 .

[第五實施例][Fifth Embodiment]

參閱圖8與圖9所示,本發明第五實施例提供一種電容器組件封裝結構Z,其包括:一電容器組件1、一第一內部導電結構2、一第二內部導電結構3、一絕緣封裝體4、一第一底端電極結構5、一第二底端電極結構6、一第一最外側強化結構7以及一第二最外側強化結構8。另外,當電容器組件封裝結構Z設置在一電路基板P上時,第一底端電極結構5可以透過一第一導電材料M1以電性連接於電路基板P的一第一焊墊P101,並且第二底端電極結構6可以透過一第二導電材料M2以電性連接於電路基板P的一第二焊墊P102。由圖8與圖5的比較,以及圖9與圖6的比較可知,本發明第五實施例與第三實施例最主要的差異在於:在第五實施例中,第一最外側強化結構7以及第二最外側強化結構8都不會延伸至絕緣封裝體4的一頂端4003上。Referring to Figures 8 and 9, the fifth embodiment of the present invention provides a capacitor component packaging structure Z, which includes: a capacitor component 1, a first internal conductive structure 2, a second internal conductive structure 3, and an insulating package. body 4, a first bottom electrode structure 5, a second bottom electrode structure 6, a first outermost strengthening structure 7 and a second outermost strengthening structure 8. In addition, when the capacitor component packaging structure Z is disposed on a circuit substrate P, the first bottom electrode structure 5 can be electrically connected to a first pad P101 of the circuit substrate P through a first conductive material M1, and the third The two bottom electrode structures 6 can be electrically connected to a second pad P102 of the circuit substrate P through a second conductive material M2. It can be seen from the comparison between Figure 8 and Figure 5 and the comparison between Figure 9 and Figure 6 that the main difference between the fifth embodiment and the third embodiment of the present invention is that in the fifth embodiment, the first outermost reinforced structure 7 Neither the second outermost reinforcing structure 8 nor the second outermost reinforcing structure 8 extends to a top end 4003 of the insulating package 4 .

更進一步來說,如圖8所示,第一底端電極結構5與第一最外側強化結構7兩者可以彼此相連,以形成一第一端部結構U1。舉例來說,第一端部結構U1可以包括包覆絕緣封裝體4的一第一部分的一第一內部導電層U101、包覆第一內部導電層U101的一第一中間導電層U102以及包覆第一中間導電層U102的一第一外部導電層U103。另 外,第一內部導電層U101可以是Ag層與Cu層兩者之中的至少一層,第一中間導電層U102可以是Ni層,並且第一外部導電層U103可以是Sn層。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。Furthermore, as shown in FIG. 8 , the first bottom electrode structure 5 and the first outermost reinforcing structure 7 can be connected to each other to form a first end structure U1. For example, the first end structure U1 may include a first inner conductive layer U101 covering a first portion of the insulating package 4 , a first intermediate conductive layer U102 covering the first inner conductive layer U101 and A first outer conductive layer U103 of the first middle conductive layer U102. In addition, the first inner conductive layer U101 may be at least one of an Ag layer and a Cu layer, the first intermediate conductive layer U102 may be a Ni layer, and the first outer conductive layer U103 may be a Sn layer. However, the above examples are only one of the possible embodiments and are not intended to limit the present invention.

更進一步來說,如圖8所示,第二底端電極結構6與第二最外側強化結構8兩者可以彼此相連,以形成一第二端部結構U2。舉例來說,第二端部結構U2可以包括包覆絕緣封裝體4的一第二部分的一第二內部導電層U201、包覆第二內部導電層U201的一第二中間導電層U202以及包覆第二中間導電層U202的一第二外部導電層U203。另外,第二內部導電層U201可以是Ag層與Cu層兩者之中的至少一層,第二中間導電層U202可以是Ni層,並且第二外部導電層U203可以是Sn層。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。Furthermore, as shown in FIG. 8 , the second bottom electrode structure 6 and the second outermost reinforcing structure 8 can be connected to each other to form a second end structure U2. For example, the second end structure U2 may include a second inner conductive layer U201 covering a second portion of the insulating package 4, a second middle conductive layer U202 covering the second inner conductive layer U201, and A second outer conductive layer U203 covers the second middle conductive layer U202. In addition, the second inner conductive layer U201 may be at least one of an Ag layer and a Cu layer, the second middle conductive layer U202 may be a Ni layer, and the second outer conductive layer U203 may be a Sn layer. However, the above examples are only one of the possible embodiments and are not intended to limit the present invention.

[實施例的有益效果][Beneficial effects of the embodiment]

本發明的其中一有益效果在於,本發明所提供的一種電容器組件封裝結構Z,其能通過“第一內部導電結構2電性接觸每一電容器素子10的正極部10P,且第一內部導電結構2具有一第一裸露底端2000”、“第二內部導電結構3電性接觸每一電容器素子10的負極部10N,且第二內部導電結構3具有一第二裸露底端3000” 、“第一底端電極結構5設置在絕緣封裝體4的底端4000上且電性接觸第一內部導電結構2的第一裸露底端2000” 、“第二底端電極結構6設置在絕緣封裝體4的底端4000上且電性接觸第二內部導電結構3的第二裸露底端3000” 、“第一最外側強化結構7鄰近第一底端電極結構5且設置在絕緣封裝體4的一第一側面4001上”以及“第二最外側強化結構8鄰近第二底端電極結構6且設置在絕緣封裝體4的一第二側面4002上”的技術方案,以使得每一電容器素子10的正極部10P可以透過第一內部導電結構2以電性連接於第一底端電極結構5(藉此以使得每一電容器素子10的正極部10P與第一底端電極結構5之間形成一第一最短導電路徑),且使得每一電容器素子10的負極部10N可以透過第二內部導電結構3以電性連接於第二底端電極結構6(藉此以使得每一電容器素子10的負極部10N與第二底端電極結構6之間形成一第二最短導電路徑)。One of the beneficial effects of the present invention is that the capacitor component packaging structure Z provided by the present invention can electrically contact the positive electrode portion 10P of each capacitor element 10 through the "first internal conductive structure 2, and the first internal conductive structure 2 2 has a first exposed bottom end 2000", "the second internal conductive structure 3 is in electrical contact with the negative electrode portion 10N of each capacitor element 10, and the second internal conductive structure 3 has a second exposed bottom end 3000", "the A bottom electrode structure 5 is disposed on the bottom end 4000 of the insulating package 4 and electrically contacts the first exposed bottom end 2000 of the first internal conductive structure 2. "The second bottom electrode structure 6 is disposed on the insulating package 4 on the bottom end 4000 and electrically contacting the second exposed bottom end 3000 of the second internal conductive structure 3, "the first outermost reinforcing structure 7 is adjacent to the first bottom electrode structure 5 and is disposed on a first side of the insulating package 4 "on a side 4001" and "the second outermost reinforcement structure 8 is adjacent to the second bottom electrode structure 6 and is provided on a second side 4002 of the insulating package 4", so that the positive electrode of each capacitor element 10 The portion 10P can be electrically connected to the first bottom electrode structure 5 through the first internal conductive structure 2 (thereby forming a first first bottom electrode structure 5 between the positive electrode portion 10P of each capacitor element 10 and the first bottom electrode structure 5 shortest conductive path), and allows the negative electrode portion 10N of each capacitor element 10 to be electrically connected to the second bottom electrode structure 6 through the second internal conductive structure 3 (thereby allowing the negative electrode portion 10N of each capacitor element 10 A second shortest conductive path is formed between the second bottom electrode structure 6 and the second bottom electrode structure 6).

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。The contents disclosed above are only preferred and feasible embodiments of the present invention, and do not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

Z:電容器組件封裝結構 1:電容器組件 10:電容器素子 10P:正極部 10N:負極部 101:金屬箔片 102:絕緣環繞層 103:導電高分子層 104:碳膠層 105:銀膠層 2:第一內部導電結構 2000:第一裸露底端 3:第二內部導電結構 3000:第二裸露底端 4:絕緣封裝體 4000:底端 4001:第一側面 4002:第二側面 4003:頂端 5:第一底端電極結構 6:第二底端電極結構 7:第一最外側強化結構 7000:第一最外側裸露表面 8:第二最外側強化結構 8000:第二最外側裸露表面 U1:第一端部結構 U101:第一內部導電層 U102:第一中間導電層 U103:第一外部導電層 U2:第二端部結構 U201:第二內部導電層 U202:第二中間導電層 U203:第二外部導電層 P:電路基板 P101:第一焊墊 P102:第二焊墊 M1:第一導電材料 M2:第二導電材料Z: Capacitor component packaging structure 1: Capacitor component 10: Capacitor element 10P: Positive electrode part 10N: Negative part 101:Metal foil 102: Insulating surrounding layer 103:Conductive polymer layer 104: Carbon glue layer 105:Silver glue layer 2: First internal conductive structure 2000: First exposed bottom 3: Second internal conductive structure 3000: The second exposed bottom 4: Insulating package 4000: bottom 4001: First side 4002: Second side 4003:Top 5: First bottom electrode structure 6: Second bottom electrode structure 7: The first outermost reinforced structure 7000: First outermost exposed surface 8: The second outermost reinforced structure 8000: Second outermost exposed surface U1: first end structure U101: First inner conductive layer U102: first middle conductive layer U103: first outer conductive layer U2: Second end structure U201: Second inner conductive layer U202: Second middle conductive layer U203: Second outer conductive layer P: circuit board P101: First soldering pad P102: Second soldering pad M1: first conductive material M2: Second conductive material

圖1為本發明第一實施例所提供的電容器組件封裝結構的電容器素子的剖面示意圖。FIG. 1 is a schematic cross-sectional view of a capacitor element of a capacitor component packaging structure provided by the first embodiment of the present invention.

圖2為本發明第一實施例所提供的電容器組件封裝結構的部分剖面示意圖。FIG. 2 is a partial cross-sectional schematic diagram of the capacitor component packaging structure provided by the first embodiment of the present invention.

圖3為本發明第一實施例所提供的電容器組件封裝結構設置在一電路基板上的部分剖面示意圖。3 is a partial cross-sectional view of a capacitor component packaging structure provided on a circuit substrate according to the first embodiment of the present invention.

圖4為本發明第二實施例所提供的電容器組件封裝結構的部分剖面示意圖。FIG. 4 is a partial cross-sectional schematic diagram of the capacitor component packaging structure provided by the second embodiment of the present invention.

圖5為本發明第三實施例所提供的電容器組件封裝結構的部分剖面示意圖。FIG. 5 is a partial cross-sectional schematic diagram of the capacitor component packaging structure provided by the third embodiment of the present invention.

圖6為本發明第三實施例所提供的電容器組件封裝結構設置在一電路基板上的部分剖面示意圖。FIG. 6 is a partial cross-sectional view of a capacitor component packaging structure provided on a circuit substrate according to the third embodiment of the present invention.

圖7為本發明第四實施例所提供的電容器組件封裝結構的部分剖面示意圖。FIG. 7 is a partial cross-sectional schematic diagram of the capacitor component packaging structure provided by the fourth embodiment of the present invention.

圖8為本發明第五實施例所提供的電容器組件封裝結構的部分剖面示意圖。FIG. 8 is a partial cross-sectional schematic diagram of the capacitor component packaging structure provided by the fifth embodiment of the present invention.

圖9為本發明第五實施例所提供的電容器組件封裝結構設置在一電路基板上的部分剖面示意圖。FIG. 9 is a partial cross-sectional view of a capacitor component packaging structure provided on a circuit substrate according to the fifth embodiment of the present invention.

圖10為本發明第六實施例所提供的電容器組件封裝結構的部分剖面示意圖。FIG. 10 is a partial cross-sectional schematic diagram of the capacitor component packaging structure provided by the sixth embodiment of the present invention.

Z:電容器組件封裝結構 Z: Capacitor component packaging structure

1:電容器組件 1: Capacitor component

10:電容器素子 10: Capacitor element

10P:正極部 10P: Positive electrode part

10N:負極部 10N: Negative part

2:第一內部導電結構 2: First internal conductive structure

2000:第一裸露底端 2000: First exposed bottom

3:第二內部導電結構 3: Second internal conductive structure

3000:第二裸露底端 3000: The second exposed bottom

4:絕緣封裝體 4: Insulating package

4000:底端 4000: bottom

4001:第一側面 4001: First side

4002:第二側面 4002: Second side

5:第一底端電極結構 5: First bottom electrode structure

6:第二底端電極結構 6: Second bottom electrode structure

7:第一最外側強化結構 7: The first outermost reinforced structure

7000:第一最外側裸露表面 7000: First outermost exposed surface

8:第二最外側強化結構 8: The second outermost reinforced structure

8000:第二最外側裸露表面 8000: Second outermost exposed surface

Claims (10)

一種電容器組件封裝結構,其包括: 一電容器組件,所述電容器組件包括彼此電性連接的多個電容器素子,每一所述電容器素子具有一正極部以及一負極部; 一第一內部導電結構,所述第一內部導電結構電性接觸每一所述電容器素子的所述正極部,所述第一內部導電結構具有一第一裸露底端; 一第二內部導電結構,所述第二內部導電結構電性接觸每一所述電容器素子的所述負極部,所述第二內部導電結構具有一第二裸露底端; 一絕緣封裝體,所述絕緣封裝體被配置以用於包覆所述電容器組件、所述第一內部導電結構以及所述第二內部導電結構,且所述第一內部導電結構的所述第一裸露底端以及所述第二內部導電結構的所述第二裸露底端從所述絕緣封裝體的一底端裸露; 一第一底端電極結構,所述第一底端電極結構設置在所述絕緣封裝體的所述底端上且電性接觸所述第一內部導電結構的所述第一裸露底端; 一第二底端電極結構,所述第二底端電極結構設置在所述絕緣封裝體的所述底端上且電性接觸所述第二內部導電結構的所述第二裸露底端; 一第一最外側強化結構,所述第一最外側強化結構鄰近所述第一底端電極結構且設置在所述絕緣封裝體的一第一側面上;以及 一第二最外側強化結構,所述第二最外側強化結構鄰近所述第二底端電極結構且設置在所述絕緣封裝體的一第二側面上; 其中,每一所述電容器素子的所述正極部透過所述第一內部導電結構以電性連接於所述第一底端電極結構,藉此以使得每一所述電容器素子的所述正極部與所述第一底端電極結構之間形成一第一最短導電路徑; 其中,每一所述電容器素子的所述負極部透過所述第二內部導電結構以電性連接於所述第二底端電極結構,藉此以使得每一所述電容器素子的所述負極部與所述第二底端電極結構之間形成一第二最短導電路徑; 其中,所述第一最短導電路徑不需要經過所述第一最外側強化結構,且所述第二最短導電路徑不需要經過所述第二最外側強化結構; 其中,所述第一最外側強化結構被配置以用於提供與外界接觸的一第一最外側裸露表面,且所述第二最外側強化結構被配置以用於提供與外界接觸的一第二最外側裸露表面。 A capacitor component packaging structure, which includes: A capacitor component, the capacitor component includes a plurality of capacitor elements electrically connected to each other, each of the capacitor elements having a positive electrode part and a negative electrode part; a first internal conductive structure electrically contacting the positive electrode portion of each capacitor element, the first internal conductive structure having a first exposed bottom end; a second internal conductive structure electrically contacting the negative electrode portion of each capacitor element, the second internal conductive structure having a second exposed bottom end; An insulating package configured to enclose the capacitor assembly, the first inner conductive structure, and the second inner conductive structure, and the third portion of the first inner conductive structure An exposed bottom end and the second exposed bottom end of the second internal conductive structure are exposed from a bottom end of the insulating package; a first bottom electrode structure, the first bottom electrode structure is disposed on the bottom end of the insulating package and electrically contacts the first exposed bottom end of the first internal conductive structure; a second bottom electrode structure, the second bottom electrode structure is disposed on the bottom end of the insulating package and electrically contacts the second exposed bottom end of the second internal conductive structure; a first outermost reinforcement structure adjacent to the first bottom electrode structure and disposed on a first side of the insulating package; and a second outermost reinforcement structure, the second outermost reinforcement structure is adjacent to the second bottom electrode structure and is disposed on a second side of the insulating package; Wherein, the positive electrode portion of each capacitor element is electrically connected to the first bottom electrode structure through the first internal conductive structure, thereby making the positive electrode portion of each capacitor element Forming a first shortest conductive path with the first bottom electrode structure; Wherein, the negative electrode portion of each capacitor element is electrically connected to the second bottom electrode structure through the second internal conductive structure, thereby making the negative electrode portion of each capacitor element A second shortest conductive path is formed between the second bottom electrode structure and the second bottom electrode structure; Wherein, the first shortest conductive path does not need to pass through the first outermost reinforced structure, and the second shortest conductive path does not need to pass through the second outermost reinforced structure; Wherein, the first outermost reinforced structure is configured to provide a first outermost exposed surface in contact with the outside world, and the second outermost reinforced structure is configured to provide a second exposed surface in contact with the outside world. The outermost exposed surface. 如請求項1所述的電容器組件封裝結構, 其中,每一所述電容器素子包括一金屬箔片、一絕緣環繞層、一導電高分子層、一碳膠層以及一銀膠層,所述絕緣環繞層環繞地設置在所述金屬箔片上,所述導電高分子層包覆所述金屬箔片的一部分且接觸所述絕緣環繞層,所述碳膠層完全包覆所述導電高分子層且接觸所述絕緣環繞層,且所述銀膠層完全包覆所述碳膠層且接觸所述絕緣環繞層; 其中,每一所述電容器素子的所述正極部具有一側表面,且所述第一內部導電結構電性接觸每一所述電容器素子的所述正極部的所述側表面; 其中,每一所述電容器素子的所述負極部具有一側表面,且所述第二內部導電結構電性接觸每一所述電容器素子的所述負極部的所述側表面; 其中,多個所述電容器素子完全被包覆在所述絕緣封裝體的內部,所述第一內部導電結構除了所述第一裸露底端之外完全被包覆在所述絕緣封裝體的內部,且所述第二內部導電結構除了所述第二裸露底端之外完全被包覆在所述絕緣封裝體的內部。 The capacitor component packaging structure as described in claim 1, Wherein, each capacitor element includes a metal foil, an insulating surrounding layer, a conductive polymer layer, a carbon glue layer and a silver glue layer, and the insulating surrounding layer is arranged around the metal foil, The conductive polymer layer covers a part of the metal foil and contacts the insulating surrounding layer, the carbon glue layer completely covers the conductive polymer layer and contacts the insulating surrounding layer, and the silver glue The layer completely covers the carbon glue layer and contacts the insulating surrounding layer; Wherein, the positive electrode portion of each capacitor element has a side surface, and the first internal conductive structure is in electrical contact with the side surface of the positive electrode portion of each capacitor element; Wherein, the negative electrode portion of each capacitor element has a side surface, and the second internal conductive structure is in electrical contact with the side surface of the negative electrode portion of each capacitor element; Wherein, a plurality of the capacitor elements are completely covered inside the insulating package, and the first internal conductive structure is completely covered inside the insulating package except for the first exposed bottom end. , and the second internal conductive structure is completely covered inside the insulating package except for the second exposed bottom end. 如請求項1所述的電容器組件封裝結構, 其中,每一所述電容器素子包括一金屬箔片、一絕緣環繞層、一導電高分子層、一碳膠層以及一銀膠層,所述絕緣環繞層環繞地設置在所述金屬箔片上,所述導電高分子層包覆所述金屬箔片的一部分且接觸所述絕緣環繞層,所述碳膠層完全包覆所述導電高分子層且接觸所述絕緣環繞層,且所述銀膠層完全包覆所述碳膠層且接觸所述絕緣環繞層; 其中,所述第一內部導電結構金屬箔片貫穿多個所述電容器素子的多個所述正極部,以電性接觸所述第一底端電極結構; 其中,每一所述電容器素子的所述負極部具有一側表面,且所述第二內部導電結構電性接觸每一所述電容器素子的所述負極部的所述側表面; 其中,多個所述電容器素子完全被包覆在所述絕緣封裝體的內部,所述第一內部導電結構除了所述第一裸露底端之外完全被包覆在所述絕緣封裝體的內部,且所述第二內部導電結構除了所述第二裸露底端之外完全被包覆在所述絕緣封裝體的內部。 The capacitor component packaging structure as described in claim 1, Wherein, each capacitor element includes a metal foil, an insulating surrounding layer, a conductive polymer layer, a carbon glue layer and a silver glue layer, and the insulating surrounding layer is arranged around the metal foil, The conductive polymer layer covers a part of the metal foil and contacts the insulating surrounding layer, the carbon glue layer completely covers the conductive polymer layer and contacts the insulating surrounding layer, and the silver glue The layer completely covers the carbon glue layer and contacts the insulating surrounding layer; Wherein, the first internal conductive structure metal foil penetrates the plurality of positive electrode portions of the plurality of capacitor elements to electrically contact the first bottom electrode structure; Wherein, the negative electrode portion of each capacitor element has a side surface, and the second internal conductive structure is in electrical contact with the side surface of the negative electrode portion of each capacitor element; Wherein, a plurality of the capacitor elements are completely covered inside the insulating package, and the first internal conductive structure is completely covered inside the insulating package except for the first exposed bottom end. , and the second internal conductive structure is completely covered inside the insulating package except for the second exposed bottom end. 如請求項1所述的電容器組件封裝結構, 其中,所述第一底端電極結構與所述第一最外側強化結構兩者彼此相連或者彼此分離一預定距離,且所述第二底端電極結構與所述第二最外側強化結構兩者彼此相連或者彼此分離一預定距離; 其中,當所述第一底端電極結構與所述第一最外側強化結構兩者彼此相連時,所述第一底端電極結構與所述第一最外側強化結構相互配合以形成一第一L形結構; 其中,當所述第二底端電極結構與所述第二最外側強化結構兩者彼此相連時,所述第二底端電極結構與所述第二最外側強化結構相互配合以形成一第二L形結構; 其中,所述第一內部導電結構垂直地或者傾斜地接觸所述第一底端電極結構的一頂端,且所述第二內部導電結構垂直地或者傾斜地接觸所述第二底端電極結構的一頂端; 其中,所述第一內部導電結構不需透過所述第一最外側強化結構以電性連接於所述第一底端電極結構,且所述第二內部導電結構不需透過所述第二最外側強化結構以電性連接於所述第二底端電極結構; 其中,所述第一內部導電結構為預先製作完成的一第一內部導電片或者透過固化而形成的一第一內側導電層,且所述第二內部導電結構為預先製作完成的一第二內部導電片或者透過固化而形成的一第二內側導電層; 其中,所述第一最外側強化結構為預先製作完成的一第一最外側導電片或者透過固化而形成的一第一最外側導電層,且所述第二最外側強化結構為預先製作完成的一第二最外側導電片或者透過固化而形成的一第二最外側導電層; 其中,當所述電容器組件封裝結構設置在一電路基板上時,所述第一底端電極結構透過一第一導電材料以電性連接於所述電路基板的一第一焊墊,且所述第二底端電極結構透過一第二導電材料以電性連接於所述電路基板的一第二焊墊; 其中,當所述電容器組件封裝結構設置在所述電路基板上時,所述第一最外側強化結構的所述第一最外側裸露表面的一部分或者全部被所述第一導電材料所覆蓋,且所述第二最外側強化結構的所述第二最外側裸露表面的一部分或者全部被所述第二導電材料所覆蓋,藉此以增加所述第一最外側強化結構與所述第一導電材料的接觸面積,且增加所述第二最外側強化結構與所述第二導電材料的接觸面積。 The capacitor component packaging structure as described in claim 1, Wherein, the first bottom electrode structure and the first outermost reinforced structure are connected to each other or separated from each other by a predetermined distance, and the second bottom electrode structure and the second outermost reinforced structure are both connected to each other or separated from each other by a predetermined distance. connected to each other or separated from each other by a predetermined distance; Wherein, when the first bottom electrode structure and the first outermost reinforcing structure are connected to each other, the first bottom electrode structure and the first outermost reinforcing structure cooperate with each other to form a first L-shaped structure; Wherein, when the second bottom electrode structure and the second outermost strengthening structure are connected to each other, the second bottom electrode structure and the second outermost strengthening structure cooperate with each other to form a second L-shaped structure; Wherein, the first internal conductive structure vertically or obliquely contacts a top end of the first bottom electrode structure, and the second internal conductive structure vertically or obliquely contacts a top end of the second bottom electrode structure ; Wherein, the first inner conductive structure does not need to be electrically connected to the first bottom electrode structure through the first outermost reinforcing structure, and the second inner conductive structure does not need to pass through the second outermost strengthening structure. The outer strengthening structure is electrically connected to the second bottom electrode structure; Wherein, the first internal conductive structure is a pre-fabricated first internal conductive sheet or a first inner conductive layer formed by curing, and the second internal conductive structure is a pre-fabricated second inner conductive layer. A conductive sheet or a second inner conductive layer formed by curing; Wherein, the first outermost reinforced structure is a pre-fabricated first outermost conductive sheet or a first outermost conductive layer formed by curing, and the second outermost reinforced structure is a pre-fabricated first outermost conductive sheet a second outermost conductive sheet or a second outermost conductive layer formed by curing; Wherein, when the capacitor component packaging structure is disposed on a circuit substrate, the first bottom electrode structure is electrically connected to a first pad of the circuit substrate through a first conductive material, and the The second bottom electrode structure is electrically connected to a second pad of the circuit substrate through a second conductive material; Wherein, when the capacitor component packaging structure is disposed on the circuit substrate, part or all of the first outermost exposed surface of the first outermost reinforced structure is covered by the first conductive material, and A part or all of the second outermost exposed surface of the second outermost reinforced structure is covered by the second conductive material, thereby increasing the number of the first outermost reinforced structure and the first conductive material. The contact area of the second outermost reinforced structure and the second conductive material is increased. 如請求項1所述的電容器組件封裝結構, 其中,所述第一最外側強化結構以及所述第二最外側強化結構都不會延伸至所述絕緣封裝體的一頂端上; 其中,所述第一底端電極結構與所述第一最外側強化結構兩者彼此相連,以形成一第一端部結構; 其中,所述第二底端電極結構與所述第二最外側強化結構兩者彼此相連,以形成一第二端部結構; 其中,所述第一端部結構包括包覆所述絕緣封裝體的一第一部分的一第一內部導電層、包覆所述第一內部導電層的一第一中間導電層以及包覆所述第一中間導電層的一第一外部導電層,且所述第二端部結構包括包覆所述絕緣封裝體的一第二部分的一第二內部導電層、包覆所述第二內部導電層的一第二中間導電層以及包覆所述第二中間導電層的一第二外部導電層; 其中,所述第一內部導電層與所述第二內部導電層都為Ag層與Cu層兩者之中的至少一層,所述第一中間導電層與所述第二中間導電層都是Ni層,且所述第一外部導電層與所述第二外部導電層都是Sn層; 其中,所述第一內部導電結構垂直地或者傾斜地接觸所述第一底端電極結構的一頂端,且所述第二內部導電結構垂直地或者傾斜地接觸所述第二底端電極結構的一頂端; 其中,所述第一內部導電結構不需透過所述第一最外側強化結構以電性連接於所述第一底端電極結構,且所述第二內部導電結構不需透過所述第二最外側強化結構以電性連接於所述第二底端電極結構; 其中,所述第一內部導電結構為預先製作完成的一第一內部導電片或者透過固化而形成的一第一內側導電層,且所述第二內部導電結構為預先製作完成的一第二內部導電片或者透過固化而形成的一第二內側導電層; 其中,所述第一最外側強化結構為預先製作完成的一第一最外側導電片或者透過固化而形成的一第一最外側導電層,且所述第二最外側強化結構為預先製作完成的一第二最外側導電片或者透過固化而形成的一第二最外側導電層; 其中,當所述電容器組件封裝結構設置在一電路基板上時,所述第一底端電極結構透過一第一導電材料以電性連接於所述電路基板的一第一焊墊,且所述第二底端電極結構透過一第二導電材料以電性連接於所述電路基板的一第二焊墊; 其中,當所述電容器組件封裝結構設置在所述電路基板上時,所述第一最外側強化結構的所述第一最外側裸露表面的一部分或者全部被所述第一導電材料所覆蓋,且所述第二最外側強化結構的所述第二最外側裸露表面的一部分或者全部被所述第二導電材料所覆蓋,藉此以增加所述第一最外側強化結構與所述第一導電材料的接觸面積,且增加所述第二最外側強化結構與所述第二導電材料的接觸面積。 The capacitor component packaging structure as described in claim 1, Wherein, neither the first outermost reinforced structure nor the second outermost reinforced structure extends to a top end of the insulating package; Wherein, the first bottom electrode structure and the first outermost strengthening structure are connected to each other to form a first end structure; Wherein, the second bottom electrode structure and the second outermost strengthening structure are connected to each other to form a second end structure; Wherein, the first end structure includes a first inner conductive layer covering a first portion of the insulating package, a first intermediate conductive layer covering the first inner conductive layer, and a first intermediate conductive layer covering the first portion of the insulating package. a first outer conductive layer of the first intermediate conductive layer, and the second end structure includes a second inner conductive layer covering a second portion of the insulating package, covering the second inner conductive layer a second middle conductive layer of the layer and a second outer conductive layer covering the second middle conductive layer; Wherein, the first inner conductive layer and the second inner conductive layer are both at least one layer of Ag layer and Cu layer, and the first middle conductive layer and the second middle conductive layer are both Ni. layer, and the first external conductive layer and the second external conductive layer are both Sn layers; Wherein, the first internal conductive structure vertically or obliquely contacts a top end of the first bottom electrode structure, and the second internal conductive structure vertically or obliquely contacts a top end of the second bottom electrode structure ; Wherein, the first inner conductive structure does not need to be electrically connected to the first bottom electrode structure through the first outermost reinforcing structure, and the second inner conductive structure does not need to pass through the second outermost strengthening structure. The outer strengthening structure is electrically connected to the second bottom electrode structure; Wherein, the first internal conductive structure is a pre-fabricated first internal conductive sheet or a first inner conductive layer formed by curing, and the second internal conductive structure is a pre-fabricated second inner conductive layer. A conductive sheet or a second inner conductive layer formed by curing; Wherein, the first outermost reinforced structure is a pre-fabricated first outermost conductive sheet or a first outermost conductive layer formed by curing, and the second outermost reinforced structure is a pre-fabricated first outermost conductive sheet a second outermost conductive sheet or a second outermost conductive layer formed by curing; Wherein, when the capacitor component packaging structure is disposed on a circuit substrate, the first bottom electrode structure is electrically connected to a first pad of the circuit substrate through a first conductive material, and the The second bottom electrode structure is electrically connected to a second pad of the circuit substrate through a second conductive material; Wherein, when the capacitor component packaging structure is disposed on the circuit substrate, part or all of the first outermost exposed surface of the first outermost reinforced structure is covered by the first conductive material, and A part or all of the second outermost exposed surface of the second outermost reinforced structure is covered by the second conductive material, thereby increasing the number of the first outermost reinforced structure and the first conductive material. The contact area of the second outermost reinforced structure and the second conductive material is increased. 一種電容器組件封裝結構,其包括: 一電容器組件,所述電容器組件包括彼此電性連接的多個電容器素子,每一所述電容器素子具有一正極部以及一負極部; 一第一內部導電結構,所述第一內部導電結構電性接觸每一所述電容器素子的所述正極部,所述第一內部導電結構具有一第一裸露底端; 一第二內部導電結構,所述第二內部導電結構電性接觸每一所述電容器素子的所述負極部,所述第二內部導電結構具有一第二裸露底端; 一絕緣封裝體,所述絕緣封裝體被配置以用於包覆所述電容器組件、所述第一內部導電結構以及所述第二內部導電結構,且所述第一內部導電結構的所述第一裸露底端以及所述第二內部導電結構的所述第二裸露底端從所述絕緣封裝體的一底端裸露; 一第一底端電極結構,所述第一底端電極結構設置在所述絕緣封裝體的所述底端上且電性接觸所述第一內部導電結構的所述第一裸露底端; 一第二底端電極結構,所述第二底端電極結構設置在所述絕緣封裝體的所述底端上且電性接觸所述第二內部導電結構的所述第二裸露底端; 一第一最外側強化結構,所述第一最外側強化結構鄰近所述第一底端電極結構且設置在所述絕緣封裝體的一第一側面上;以及 一第二最外側強化結構,所述第二最外側強化結構鄰近所述第二底端電極結構且設置在所述絕緣封裝體的一第二側面上。 A capacitor component packaging structure, which includes: A capacitor component, the capacitor component includes a plurality of capacitor elements electrically connected to each other, each of the capacitor elements having a positive electrode part and a negative electrode part; a first internal conductive structure electrically contacting the positive electrode portion of each capacitor element, the first internal conductive structure having a first exposed bottom end; a second internal conductive structure electrically contacting the negative electrode portion of each capacitor element, the second internal conductive structure having a second exposed bottom end; An insulating package configured to enclose the capacitor assembly, the first inner conductive structure, and the second inner conductive structure, and the third portion of the first inner conductive structure An exposed bottom end and the second exposed bottom end of the second internal conductive structure are exposed from a bottom end of the insulating package; a first bottom electrode structure, the first bottom electrode structure is disposed on the bottom end of the insulating package and electrically contacts the first exposed bottom end of the first internal conductive structure; a second bottom electrode structure, the second bottom electrode structure is disposed on the bottom end of the insulating package and electrically contacts the second exposed bottom end of the second internal conductive structure; a first outermost reinforcement structure adjacent to the first bottom electrode structure and disposed on a first side of the insulating package; and A second outermost reinforcement structure, the second outermost reinforcement structure is adjacent to the second bottom electrode structure and is disposed on a second side of the insulating package. 如請求項6所述的電容器組件封裝結構, 其中,每一所述電容器素子包括一金屬箔片、一絕緣環繞層、一導電高分子層、一碳膠層以及一銀膠層,所述絕緣環繞層環繞地設置在所述金屬箔片上,所述導電高分子層包覆所述金屬箔片的一部分且接觸所述絕緣環繞層,所述碳膠層完全包覆所述導電高分子層且接觸所述絕緣環繞層,且所述銀膠層完全包覆所述碳膠層且接觸所述絕緣環繞層; 其中,每一所述電容器素子的所述正極部具有一側表面,且所述第一內部導電結構電性接觸每一所述電容器素子的所述正極部的所述側表面; 其中,每一所述電容器素子的所述負極部具有一側表面,且所述第二內部導電結構電性接觸每一所述電容器素子的所述負極部的所述側表面; 其中,多個所述電容器素子完全被包覆在所述絕緣封裝體的內部,所述第一內部導電結構除了所述第一裸露底端之外完全被包覆在所述絕緣封裝體的內部,且所述第二內部導電結構除了所述第二裸露底端之外完全被包覆在所述絕緣封裝體的內部。 The capacitor component packaging structure as described in claim 6, Wherein, each capacitor element includes a metal foil, an insulating surrounding layer, a conductive polymer layer, a carbon glue layer and a silver glue layer, and the insulating surrounding layer is arranged around the metal foil, The conductive polymer layer covers a part of the metal foil and contacts the insulating surrounding layer, the carbon glue layer completely covers the conductive polymer layer and contacts the insulating surrounding layer, and the silver glue The layer completely covers the carbon glue layer and contacts the insulating surrounding layer; Wherein, the positive electrode portion of each capacitor element has a side surface, and the first internal conductive structure is in electrical contact with the side surface of the positive electrode portion of each capacitor element; Wherein, the negative electrode portion of each capacitor element has a side surface, and the second internal conductive structure is in electrical contact with the side surface of the negative electrode portion of each capacitor element; Wherein, a plurality of the capacitor elements are completely covered inside the insulating package, and the first internal conductive structure is completely covered inside the insulating package except for the first exposed bottom end. , and the second internal conductive structure is completely covered inside the insulating package except for the second exposed bottom end. 如請求項6所述的電容器組件封裝結構, 其中,每一所述電容器素子包括一金屬箔片、一絕緣環繞層、一導電高分子層、一碳膠層以及一銀膠層,所述絕緣環繞層環繞地設置在所述金屬箔片上,所述導電高分子層包覆所述金屬箔片的一部分且接觸所述絕緣環繞層,所述碳膠層完全包覆所述導電高分子層且接觸所述絕緣環繞層,且所述銀膠層完全包覆所述碳膠層且接觸所述絕緣環繞層; 其中,所述第一內部導電結構金屬箔片貫穿多個所述電容器素子的多個所述正極部,以電性接觸所述第一底端電極結構; 其中,每一所述電容器素子的所述負極部具有一側表面,且所述第二內部導電結構電性接觸每一所述電容器素子的所述負極部的所述側表面; 其中,多個所述電容器素子完全被包覆在所述絕緣封裝體的內部,所述第一內部導電結構除了所述第一裸露底端之外完全被包覆在所述絕緣封裝體的內部,且所述第二內部導電結構除了所述第二裸露底端之外完全被包覆在所述絕緣封裝體的內部。 The capacitor component packaging structure as described in claim 6, Wherein, each capacitor element includes a metal foil, an insulating surrounding layer, a conductive polymer layer, a carbon glue layer and a silver glue layer, and the insulating surrounding layer is arranged around the metal foil, The conductive polymer layer covers a part of the metal foil and contacts the insulating surrounding layer, the carbon glue layer completely covers the conductive polymer layer and contacts the insulating surrounding layer, and the silver glue The layer completely covers the carbon glue layer and contacts the insulating surrounding layer; Wherein, the first internal conductive structure metal foil penetrates the plurality of positive electrode portions of the plurality of capacitor elements to electrically contact the first bottom electrode structure; Wherein, the negative electrode portion of each capacitor element has a side surface, and the second internal conductive structure is in electrical contact with the side surface of the negative electrode portion of each capacitor element; Wherein, a plurality of the capacitor elements are completely covered inside the insulating package, and the first internal conductive structure is completely covered inside the insulating package except for the first exposed bottom end. , and the second internal conductive structure is completely covered inside the insulating package except for the second exposed bottom end. 如請求項6所述的電容器組件封裝結構, 其中,所述第一底端電極結構與所述第一最外側強化結構兩者彼此相連或者彼此分離一預定距離,且所述第二底端電極結構與所述第二最外側強化結構兩者彼此相連或者彼此分離一預定距離; 其中,當所述第一底端電極結構與所述第一最外側強化結構兩者彼此相連時,所述第一底端電極結構與所述第一最外側強化結構相互配合以形成一第一L形結構; 其中,當所述第二底端電極結構與所述第二最外側強化結構兩者彼此相連時,所述第二底端電極結構與所述第二最外側強化結構相互配合以形成一第二L形結構; 其中,所述第一內部導電結構垂直地或者傾斜地接觸所述第一底端電極結構的一頂端,且所述第二內部導電結構垂直地或者傾斜地接觸所述第二底端電極結構的一頂端; 其中,所述第一內部導電結構不需透過所述第一最外側強化結構以電性連接於所述第一底端電極結構,且所述第二內部導電結構不需透過所述第二最外側強化結構以電性連接於所述第二底端電極結構; 其中,所述第一內部導電結構為預先製作完成的一第一內部導電片或者透過固化而形成的一第一內側導電層,且所述第二內部導電結構為預先製作完成的一第二內部導電片或者透過固化而形成的一第二內側導電層; 其中,所述第一最外側強化結構為預先製作完成的一第一最外側導電片或者透過固化而形成的一第一最外側導電層,且所述第二最外側強化結構為預先製作完成的一第二最外側導電片或者透過固化而形成的一第二最外側導電層; 其中,當所述電容器組件封裝結構設置在一電路基板上時,所述第一底端電極結構透過一第一導電材料以電性連接於所述電路基板的一第一焊墊,且所述第二底端電極結構透過一第二導電材料以電性連接於所述電路基板的一第二焊墊; 其中,當所述電容器組件封裝結構設置在所述電路基板上時,所述第一最外側強化結構的一第一最外側裸露表面的一部分或者全部被所述第一導電材料所覆蓋,且所述第二最外側強化結構的一第二最外側裸露表面的一部分或者全部被所述第二導電材料所覆蓋,藉此以增加所述第一最外側強化結構與所述第一導電材料的接觸面積,且增加所述第二最外側強化結構與所述第二導電材料的接觸面積。 The capacitor component packaging structure as described in claim 6, Wherein, the first bottom electrode structure and the first outermost reinforced structure are connected to each other or separated from each other by a predetermined distance, and the second bottom electrode structure and the second outermost reinforced structure are both connected to each other or separated from each other by a predetermined distance. connected to each other or separated from each other by a predetermined distance; Wherein, when the first bottom electrode structure and the first outermost reinforcing structure are connected to each other, the first bottom electrode structure and the first outermost reinforcing structure cooperate with each other to form a first L-shaped structure; Wherein, when the second bottom electrode structure and the second outermost strengthening structure are connected to each other, the second bottom electrode structure and the second outermost strengthening structure cooperate with each other to form a second L-shaped structure; Wherein, the first internal conductive structure vertically or obliquely contacts a top end of the first bottom electrode structure, and the second internal conductive structure vertically or obliquely contacts a top end of the second bottom electrode structure ; Wherein, the first inner conductive structure does not need to be electrically connected to the first bottom electrode structure through the first outermost reinforcing structure, and the second inner conductive structure does not need to pass through the second outermost strengthening structure. The outer strengthening structure is electrically connected to the second bottom electrode structure; Wherein, the first internal conductive structure is a pre-fabricated first internal conductive sheet or a first inner conductive layer formed by curing, and the second internal conductive structure is a pre-fabricated second inner conductive layer. A conductive sheet or a second inner conductive layer formed by curing; Wherein, the first outermost reinforced structure is a pre-fabricated first outermost conductive sheet or a first outermost conductive layer formed by curing, and the second outermost reinforced structure is a pre-fabricated first outermost conductive sheet a second outermost conductive sheet or a second outermost conductive layer formed by curing; Wherein, when the capacitor component packaging structure is disposed on a circuit substrate, the first bottom electrode structure is electrically connected to a first pad of the circuit substrate through a first conductive material, and the The second bottom electrode structure is electrically connected to a second pad of the circuit substrate through a second conductive material; Wherein, when the capacitor component packaging structure is disposed on the circuit substrate, part or all of a first outermost exposed surface of the first outermost reinforced structure is covered by the first conductive material, and the A part or all of a second outermost exposed surface of the second outermost reinforced structure is covered by the second conductive material, thereby increasing the contact between the first outermost reinforced structure and the first conductive material. area, and increase the contact area between the second outermost reinforcing structure and the second conductive material. 如請求項6所述的電容器組件封裝結構, 其中,所述第一最外側強化結構以及所述第二最外側強化結構都不會延伸至所述絕緣封裝體的一頂端上; 其中,所述第一底端電極結構與所述第一最外側強化結構兩者彼此相連,以形成一第一端部結構; 其中,所述第二底端電極結構與所述第二最外側強化結構兩者彼此相連,以形成一第二端部結構; 其中,所述第一端部結構包括包覆所述絕緣封裝體的一第一部分的一第一內部導電層、包覆所述第一內部導電層的一第一中間導電層以及包覆所述第一中間導電層的一第一外部導電層,且所述第二端部結構包括包覆所述絕緣封裝體的一第二部分的一第二內部導電層、包覆所述第二內部導電層的一第二中間導電層以及包覆所述第二中間導電層的一第二外部導電層; 其中,所述第一內部導電層與所述第二內部導電層都為Ag層與Cu層兩者之中的至少一層,所述第一中間導電層與所述第二中間導電層都是Ni層,且所述第一外部導電層與所述第二外部導電層都是Sn層; 其中,所述第一內部導電結構垂直地或者傾斜地接觸所述第一底端電極結構的一頂端,且所述第二內部導電結構垂直地或者傾斜地接觸所述第二底端電極結構的一頂端; 其中,所述第一內部導電結構不需透過所述第一最外側強化結構以電性連接於所述第一底端電極結構,且所述第二內部導電結構不需透過所述第二最外側強化結構以電性連接於所述第二底端電極結構; 其中,所述第一內部導電結構為預先製作完成的一第一內部導電片或者透過固化而形成的一第一內側導電層,且所述第二內部導電結構為預先製作完成的一第二內部導電片或者透過固化而形成的一第二內側導電層; 其中,所述第一最外側強化結構為預先製作完成的一第一最外側導電片或者透過固化而形成的一第一最外側導電層,且所述第二最外側強化結構為預先製作完成的一第二最外側導電片或者透過固化而形成的一第二最外側導電層; 其中,當所述電容器組件封裝結構設置在一電路基板上時,所述第一底端電極結構透過一第一導電材料以電性連接於所述電路基板的一第一焊墊,且所述第二底端電極結構透過一第二導電材料以電性連接於所述電路基板的一第二焊墊; 其中,當所述電容器組件封裝結構設置在所述電路基板上時,所述第一最外側強化結構的一第一最外側裸露表面的一部分或者全部被所述第一導電材料所覆蓋,且所述第二最外側強化結構的一第二最外側裸露表面的一部分或者全部被所述第二導電材料所覆蓋,藉此以增加所述第一最外側強化結構與所述第一導電材料的接觸面積,且增加所述第二最外側強化結構與所述第二導電材料的接觸面積。 The capacitor component packaging structure as described in claim 6, Wherein, neither the first outermost reinforced structure nor the second outermost reinforced structure extends to a top end of the insulating package; Wherein, the first bottom electrode structure and the first outermost strengthening structure are connected to each other to form a first end structure; Wherein, the second bottom electrode structure and the second outermost strengthening structure are connected to each other to form a second end structure; Wherein, the first end structure includes a first inner conductive layer covering a first portion of the insulating package, a first intermediate conductive layer covering the first inner conductive layer, and a first intermediate conductive layer covering the first portion of the insulating package. a first outer conductive layer of the first intermediate conductive layer, and the second end structure includes a second inner conductive layer covering a second portion of the insulating package, covering the second inner conductive layer a second middle conductive layer of the layer and a second outer conductive layer covering the second middle conductive layer; Wherein, the first inner conductive layer and the second inner conductive layer are both at least one layer of Ag layer and Cu layer, and the first middle conductive layer and the second middle conductive layer are both Ni. layer, and the first external conductive layer and the second external conductive layer are both Sn layers; Wherein, the first internal conductive structure vertically or obliquely contacts a top end of the first bottom electrode structure, and the second internal conductive structure vertically or obliquely contacts a top end of the second bottom electrode structure ; Wherein, the first inner conductive structure does not need to be electrically connected to the first bottom electrode structure through the first outermost reinforcing structure, and the second inner conductive structure does not need to pass through the second outermost strengthening structure. The outer strengthening structure is electrically connected to the second bottom electrode structure; Wherein, the first internal conductive structure is a pre-fabricated first internal conductive sheet or a first inner conductive layer formed by curing, and the second internal conductive structure is a pre-fabricated second inner conductive layer. A conductive sheet or a second inner conductive layer formed by curing; Wherein, the first outermost reinforced structure is a pre-fabricated first outermost conductive sheet or a first outermost conductive layer formed by curing, and the second outermost reinforced structure is a pre-fabricated first outermost conductive sheet a second outermost conductive sheet or a second outermost conductive layer formed by curing; Wherein, when the capacitor component packaging structure is disposed on a circuit substrate, the first bottom electrode structure is electrically connected to a first pad of the circuit substrate through a first conductive material, and the The second bottom electrode structure is electrically connected to a second pad of the circuit substrate through a second conductive material; Wherein, when the capacitor component packaging structure is disposed on the circuit substrate, part or all of a first outermost exposed surface of the first outermost reinforced structure is covered by the first conductive material, and the A part or all of a second outermost exposed surface of the second outermost reinforced structure is covered by the second conductive material, thereby increasing the contact between the first outermost reinforced structure and the first conductive material. area, and increase the contact area between the second outermost reinforcing structure and the second conductive material.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201216304A (en) * 2010-10-06 2012-04-16 Apaq Technology Co Ltd Stacked solid electrolytic capacitor with multi-welding structure and a manufacturing method thereof
CN107785172A (en) * 2016-08-29 2018-03-09 株式会社村田制作所 Solid electrolytic capacitor
TW201908363A (en) * 2017-07-12 2019-03-01 鈺邦科技股份有限公司 Polymer composite material applied to a solid capacitor, capacitor package structure using the same and manufacturing method thereof
TW202244962A (en) * 2021-05-07 2022-11-16 旭積科技股份有限公司 Capacitor assembly package structure, and capacitor element and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201216304A (en) * 2010-10-06 2012-04-16 Apaq Technology Co Ltd Stacked solid electrolytic capacitor with multi-welding structure and a manufacturing method thereof
CN107785172A (en) * 2016-08-29 2018-03-09 株式会社村田制作所 Solid electrolytic capacitor
TW201908363A (en) * 2017-07-12 2019-03-01 鈺邦科技股份有限公司 Polymer composite material applied to a solid capacitor, capacitor package structure using the same and manufacturing method thereof
TW202244962A (en) * 2021-05-07 2022-11-16 旭積科技股份有限公司 Capacitor assembly package structure, and capacitor element and method of manufacturing the same

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