TWI833163B - Nitride-based semiconductor bidirectional switching device and method for manufacturing the same - Google Patents

Nitride-based semiconductor bidirectional switching device and method for manufacturing the same Download PDF

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TWI833163B
TWI833163B TW111104153A TW111104153A TWI833163B TW I833163 B TWI833163 B TW I833163B TW 111104153 A TW111104153 A TW 111104153A TW 111104153 A TW111104153 A TW 111104153A TW I833163 B TWI833163 B TW I833163B
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Taiwan
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substrate
nitride
switching device
terminal
conductive
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TW111104153A
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Chinese (zh)
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TW202312431A (en
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趙起越
周春華
李茂林
高吳昊
楊超
楊觀深
程紹鵬
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大陸商英諾賽科（蘇州）科技有限公司
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Publication of TW202312431A publication Critical patent/TW202312431A/en
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Abstract

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.

Description

氮化物基半導體雙向切換器件和其製造方法 Nitride-based semiconductor bidirectional switching device and manufacturing method thereof

本發明總體來說涉及氮化物基半導體雙向切換器件。更具體來說，本發明涉及具有基板電位管理能力的氮化物基半導體雙向切換器件。 The present invention generally relates to nitride-based semiconductor bidirectional switching devices. More specifically, the present invention relates to nitride-based semiconductor bidirectional switching devices with substrate potential management capabilities.

由於低功率損耗和快速切換轉變，GaN基器件已廣泛用於高頻電能轉換系統。與矽金屬氧化物半導體場效應電晶體(MOSFET)相比，GaN高電子遷移率電晶體(HEMT)在高功率和高頻應用中具有好得多的品質因數和更具前景的性能。 Due to low power loss and fast switching transitions, GaN-based devices have been widely used in high-frequency power conversion systems. Compared with silicon metal oxide semiconductor field effect transistors (MOSFETs), GaN high electron mobility transistors (HEMTs) have much better figure of merit and more promising performance in high power and high frequency applications.

通過恰當的閘極結構設計，GaN HEMT器件可配置為等效於在相反方向上串聯耦合的兩個電晶體，使得其可用於雙側電晶體Qm。與需要兩個Si基電晶體的常規矽基配置相比，GaN基雙側電晶體Qm可具有更簡單的驅動電路系統、更低的功耗和更緊湊的大小。 With proper gate structure design, a GaN HEMT device can be configured as equivalent to two transistors coupled in series in opposite directions, making it usable with a two-sided transistor Qm. Compared with conventional silicon-based configurations that require two Si-based transistors, the GaN-based double-sided transistor Qm can have a simpler driving circuit system, lower power consumption, and a more compact size.

如果GaN HEMT器件的基板是浮動的，那麼基板將在器件的切換過程期間累積電荷，這將影響器件的切換性能且使器件的長期可靠性劣化。在單向GaN HEMT器件中，為了避免基板浮動對器件的性能和可靠性的影響，通常需要將器件的基板和源極保持在相同電位。在雙向GaN HEMT器件中，由於 器件的源極和汲極根據電路的工作狀態切換，因此不可能將基板與源極或汲極端子直接電連接。因此，對於雙向GaN HEMT器件，有必要根據器件的工作狀態獨立地控制基板電位，使得器件的基板電位始終維持在器件的最低電位。在低側應用中，雙向器件的最低電位為系統接地，且雙向GaN HEMT器件的基板電位可直接接地。然而，在高側應用中，雙向器件應用的最低電位可能不是系統接地，因此雙向GaN HEMT器件的基板電位應獨立地控制為處於器件的最低電位 If the substrate of a GaN HEMT device is floating, the substrate will accumulate charge during the switching process of the device, which will affect the switching performance of the device and degrade the long-term reliability of the device. In unidirectional GaN HEMT devices, in order to avoid the impact of substrate floating on the performance and reliability of the device, it is usually necessary to keep the substrate and source of the device at the same potential. In bidirectional GaN HEMT devices, due to The source and drain of the device switch according to the operating status of the circuit, so it is not possible to directly electrically connect the substrate to the source or drain terminals. Therefore, for bidirectional GaN HEMT devices, it is necessary to independently control the substrate potential according to the working status of the device so that the substrate potential of the device is always maintained at the lowest potential of the device. In low-side applications, the lowest potential of bidirectional devices is system ground, and the substrate potential of bidirectional GaN HEMT devices can be directly connected to ground. However, in high-side applications, the lowest potential of the bidirectional device application may not be the system ground, so the substrate potential of the bidirectional GaN HEMT device should be independently controlled to be at the lowest potential of the device

根據本公開的一個方面，提供一種具有基板電位管理能力的氮化物基雙向切換器件。所述器件具有控制節點、第一電力/負載節點、第二電力/負載節點和主基板，且包括：氮化物基雙側電晶體；和基板電位管理電路，其配置成用於管理主基板的電位。 According to one aspect of the present disclosure, a nitride-based bidirectional switching device with substrate potential management capability is provided. The device has a control node, a first power/load node, a second power/load node, and a main substrate, and includes: a nitride-based double-sided transistor; and a substrate potential management circuit configured to manage the main substrate. Potential.

雙向切換器件可在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓的電壓下偏置)下在第一方向上操作；且在第二操作模式(其中第一電力/負載節點在低於施加到第二電力/負載節點的電壓的電壓下偏置)下在第二方向上操作。 The bidirectional switching device is operable in a first direction in a first mode of operation in which a first power/load node is biased at a voltage higher than a voltage applied to a second power/load node; and in a second mode of operation (wherein the first power/load node is biased at a voltage lower than the voltage applied to the second power/load node) operating in the second direction.

通過實施基板電位管理電路，基板電位Vsub在第一和第二操作模式兩者下基本上等於第一和第二電力/負載節點的電位中的較低一個。因此，主基板的電位可穩定到雙側電晶體的第一源極/汲極和第二源極/汲極的電位中的較低一個，而不管雙向切換器件在哪個方向上操作。因此，雙側電晶體可在兩個方向上以穩定基板電位操作以用於傳導電流。 By implementing the substrate potential management circuit, the substrate potential V sub is substantially equal to the lower of the potentials of the first and second power/load nodes in both the first and second modes of operation. Therefore, the potential of the main substrate can be stabilized to the lower one of the potentials of the first source/drain and the second source/drain of the double-sided transistor regardless of the direction in which the bidirectional switching device operates. Thus, a two-sided transistor can operate at a stable substrate potential in both directions for conducting current.

1、2、3、4、5、6、7、8、11、21、21a~21f、31、41、41a~41f、51、51a~51f、52、52a、53、53a、61、61a~61f、62、63、71、71a~71f、72、72a~72f、73、73a~73f、74、74a~74f、81、81a~81f、82、82a~82f、83、83a~83f、84、84a~84f:雙向切換器件 1, 2, 3, 4, 5, 6, 7, 8, 11, 21, 21a~21f, 31, 41, 41a~41f, 51, 51a~51f, 52, 52a, 53, 53a, 61, 61a~ 61f, 62, 63, 71, 71a~71f, 72, 72a~72f, 73, 73a~73f, 74, 74a~74f, 81, 81a~81f, 82, 82a~82f, 83, 83a~83f, 84, 84a~84f: Bidirectional switching device

102:基板 102:Substrate

104:第一氮化物基半導體層 104: First nitride-based semiconductor layer

106:第二氮化物基半導體層 106: Second nitride-based semiconductor layer

110、110a、110b、110c、110d、310:閘極結構 110, 110a, 110b, 110c, 110d, 310: Gate structure

111:毯覆式p型摻雜III-V化合物半導體層 111: Blanket p-type doped III-V compound semiconductor layer

112:閘極半導體層 112: Gate semiconductor layer

113:毯覆式閘電極層 113: Blanket gate electrode layer

114:閘極金屬層 114: Gate metal layer

115:毯覆式導電層 115: Blanket conductive layer

116、116a、116b、116c、116d、116e:S/D電極 116, 116a, 116b, 116c, 116d, 116e: S/D electrode

116e:歐姆接觸件 116e: Ohmic contact

124、126、128:第一、第二、第三鈍化層 124, 126, 128: first, second and third passivation layer

126a:下層 126a: Lower level

126b:上層 126b: Upper level

132、136:第一、第二導電通孔 132, 136: first and second conductive vias

134:第三導電通孔 134:Third conductive via

141:毯覆式導電層 141: Blanket conductive layer

142、146:第一、第二導電跡線 142, 146: first and second conductive traces

143:毯覆式金屬/金屬化合物層 143: Blanket metal/metal compound layer

145:毯覆式導電層 145: Blanket conductive layer

154:保護層 154:Protective layer

160:S/D區 160:S/D area

162:鎵穿孔 162:Gallium perforation

170:導電墊 170:Conductive pad

171:保護層 171:Protective layer

180a、180b、180c、180d、180e、180f:電阻性元件 180a, 180b, 180c, 180d, 180e, 180f: resistive components

181a、181b、181c、181d、181e、181f:第一端 181a, 181b, 181c, 181d, 181e, 181f: first end

182a、182b、182c、182d、182e、182f:第二端 182a, 182b, 182c, 182d, 182e, 182f: second end

A-A'、B-B'、C-C'、D-D'、E-E':線 A-A', B-B', C-C', D-D', E-E': lines

CTRL:控制節點 CTRL: control node

D1、D2:第一、第二汲極端子 D1, D2: first and second drain terminals

D3、D4:汲極端子 D3, D4: drain terminal

F1、F2、F3:第一、第二、第三電位穩定元件 F1, F2, F3: the first, second and third potential stabilizing elements

G1、G2:第一、第二閘極端子 G1, G2: first and second gate terminals

G3:閘極端子 G3: Gate terminal

Gm:主閘極端子 G m : Main gate terminal

P/L1、P/L2:第一、第二電力/負載節點 P/L1, P/L2: first and second power/load nodes

Q1、Q2:第一、第二基板耦合電晶體 Q1, Q2: first and second substrate coupling transistors

Q3、Q4:整流電晶體 Q3, Q4: rectifier transistor

Qm:雙側電晶體 Q m : double-sided transistor

R:電阻 R: Resistor

R1、R2:電阻器 R1, R2: resistor

Rs1,on、Rs2,on:導通電阻 R s1,on , R s2,on : on-resistance

Rs1,off、Rs2,off:截止電阻 R s1,off , R s2,off : cut-off resistance

RFW、RFW1、RFW2:正向電阻 R FW , R FW1 , R FW2 : forward resistance

RRV、RRV1、RRV2:反向電阻 R RV , R RV1 , R RV2 : reverse resistance

REF:參考節點 REF: reference node

S1、S2:第一、第二源極端子 S1, S2: first and second source terminals

S3、S4:源極端子 S3, S4: source terminal

S/D1、S/D2:第一、第二源極/汲極端子 S/D1, S/D2: first and second source/drain terminals

SUB:主基板端子 SUB: main circuit board terminal

VH、VL、VON、Vm,on、Vm,off、VOFF:電壓 V H , V L , V ON , V m,on , V m,off , V OFF : voltage

Vsub:電位 V sub :potential

當結合附圖閱讀時，從以下具體實施方式容易理解本公開的各方面。應注意，各種特徵可不按比例繪製。也就是說，為了論述清楚起見，各種特徵的尺寸可任意增大或減小。在下文中參考圖式更詳細地描述本公開的實施例，在圖式中：圖1為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件的電路框圖。 Aspects of the present disclosure are readily understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that various features may not be drawn to scale. That is, the dimensions of the various features may be arbitrarily increased or reduced for the sake of clarity of discussion. Embodiments of the present disclosure are described in more detail below with reference to the drawings, in which: Figure 1 is a circuit block diagram of a bidirectional switching device with substrate potential management capabilities according to some embodiments of the invention.

圖2描繪基於圖1的電路框圖的根據一些實施例的雙向切換器件的電路圖。 FIG. 2 depicts a circuit diagram of a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 1 .

圖3A至3D描繪圖2中的雙向切換器件的操作機構。 3A to 3D depict the operating mechanism of the bidirectional switching device in FIG. 2 .

圖4和圖5A至5D顯示基於圖2中的電路圖的雙向切換器件的結構。圖4為雙向切換器件的部分佈局。圖5A至5D為分別沿圖4中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。 4 and 5A to 5D show the structure of a bidirectional switching device based on the circuit diagram in FIG. 2 . Figure 4 shows a partial layout of a bidirectional switching device. 5A to 5D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 4, respectively.

圖6A至6K顯示根據本發明的一些實施例的用於製造雙向切換器件的方法的不同階段。 Figures 6A to 6K show different stages of a method for fabricating a bidirectional switching device according to some embodiments of the invention.

圖7為根據本發明的其它實施例的具有基板電位管理能力的雙向切換器件的電路框圖。 7 is a circuit block diagram of a bidirectional switching device with substrate potential management capability according to other embodiments of the present invention.

圖8為基於圖7的電路框圖的根據一些實施例的雙向切換器件的電路圖。 FIG. 8 is a circuit diagram of a bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 7 .

圖9和圖10A至10B顯示基於圖8的電路圖的根據實施例的雙向切換器件的結構。圖9為雙向切換器件的部分佈局。圖10A至10B為分別沿圖9中的線D-D'和E-E'截取的橫截面視圖。 9 and 10A to 10B show the structure of a bidirectional switching device according to an embodiment based on the circuit diagram of FIG. 8 . Figure 9 shows a partial layout of a bidirectional switching device. 10A to 10B are cross-sectional views taken along lines DD' and EE' in FIG. 9, respectively.

圖11和圖12A至12B顯示基於圖8的電路圖的根據另一實施例的雙向切換器件的結構。圖11為雙向切換器件的部分佈局。圖12A至12B為分別沿圖11中的線D-D'和E-E'截取的橫截面視圖。 11 and 12A to 12B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8 . Figure 11 shows a partial layout of a bidirectional switching device. 12A to 12B are cross-sectional views taken along lines DD′ and EE′ in FIG. 11 , respectively.

圖13和圖14A至14B顯示基於圖8的電路圖的根據另一實施例的雙向切換器件的結構。圖13為雙向切換器件的部分佈局。圖14A至14B為分別沿圖13中的線D-D'和E-E'截取的橫截面視圖。 13 and 14A to 14B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8 . Figure 13 shows a partial layout of a bidirectional switching device. 14A to 14B are cross-sectional views taken along lines DD' and EE' in FIG. 13, respectively.

圖15和圖16A至16B顯示基於圖8的電路圖的根據另一實施例的雙向切換器件的結構。圖15為雙向切換器件的部分佈局。圖16A至16B為分別沿圖15中的線D-D'和E-E'截取的橫截面視圖。 15 and 16A to 16B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8 . Figure 15 shows a partial layout of a bidirectional switching device. 16A to 16B are cross-sectional views taken along lines DD' and EE' in FIG. 15, respectively.

圖17和圖18A至18B顯示基於圖8的電路圖的根據另一實施例的雙向切換器件的結構。圖17為雙向切換器件的部分佈局。圖18A至18B為分別沿圖17中的線D-D'和E-E'截取的橫截面視圖。 17 and 18A to 18B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8 . Figure 17 shows a partial layout of a bidirectional switching device. 18A to 18B are cross-sectional views taken along lines DD' and EE' in FIG. 17, respectively.

圖19和圖20A至20B顯示基於圖8的電路圖的根據另一實施例的雙向切換器件的結構。圖19為雙向切換器件的部分佈局。圖20A至20B為分別沿圖19中的線D-D'和E-E'截取的橫截面視圖。 19 and 20A to 20B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 8 . Figure 19 shows a partial layout of a bidirectional switching device. 20A to 20B are cross-sectional views taken along lines DD' and EE' in FIG. 19, respectively.

圖21為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件的電路框圖。 Figure 21 is a circuit block diagram of a bidirectional switching device with substrate potential management capabilities in accordance with some embodiments of the present invention.

圖22描繪基於圖21的電路框圖的根據一些實施例的雙向切換器件的電路圖。 Figure 22 depicts a circuit diagram of a bidirectional switching device according to some embodiments based on the circuit block diagram of Figure 21.

圖23A至23D描繪圖22中的雙向切換器件的操作機構。 Figures 23A to 23D depict the operating mechanism of the bidirectional switching device in Figure 22.

圖24和圖25A至25D顯示基於圖22中的電路圖的雙向切換器件的結構。圖24為雙向切換器件的部分佈局。圖25A至25D為分別沿圖24中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。 24 and 25A to 25D show the structure of the bidirectional switching device based on the circuit diagram in FIG. 22. Figure 24 shows a partial layout of a bidirectional switching device. 25A to 25D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 24, respectively.

圖26為根據本發明的其它實施例的具有基板電位管理能力的雙向切換器件的電路框圖。 26 is a circuit block diagram of a bidirectional switching device with substrate potential management capability according to other embodiments of the present invention.

圖27為基於圖26的電路框圖的根據一些實施例的雙向切換器件的電路圖。 Figure 27 is a circuit diagram of a bidirectional switching device according to some embodiments based on the circuit block diagram of Figure 26.

圖28和圖29A至29B顯示基於圖27的電路圖的根據實施例的雙向切換器件的結構。圖28為雙向切換器件的部分佈局。圖29A至29B為分別沿圖28中的線D-D'和E-E'截取的橫截面視圖。 28 and 29A to 29B show the structure of the bidirectional switching device according to the embodiment based on the circuit diagram of FIG. 27 . Figure 28 shows a partial layout of a bidirectional switching device. 29A to 29B are cross-sectional views taken along lines DD' and EE' in FIG. 28, respectively.

圖30和圖31A至31B顯示基於圖27的電路圖的根據另一實施例的雙向切換器件的結構。圖30為雙向切換器件的部分佈局。圖31A至31B為分別沿圖30中的線D-D'和E-E'截取的橫截面視圖。 30 and 31A to 31B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27 . Figure 30 shows a partial layout of a bidirectional switching device. 31A to 31B are cross-sectional views taken along lines DD' and EE' in FIG. 30, respectively.

圖32和圖33A至33B顯示基於圖27的電路圖的根據另一實施例的雙向切換器件的結構。圖32為雙向切換器件的部分佈局。圖33A至33B為分別沿圖32中的線D-D'和E-E'截取的橫截面視圖。 32 and 33A to 33B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27 . Figure 32 shows a partial layout of a bidirectional switching device. 33A to 33B are cross-sectional views taken along lines DD' and EE' in FIG. 32, respectively.

圖34和圖35A至35B顯示基於圖27的電路圖的根據另一實施例的雙向切換器件的結構。圖34為雙向切換器件的部分佈局。圖35A至35B為分別沿圖34中的線D-D'和E-E'截取的橫截面視圖。 34 and 35A to 35B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27 . Figure 34 shows a partial layout of a bidirectional switching device. 35A to 35B are cross-sectional views taken along lines DD' and EE' in FIG. 34, respectively.

圖36和圖37A至37B顯示基於圖27的電路圖的根據另一實施例的雙向切換器件的結構。圖36為雙向切換器件的部分佈局。圖37A至37B為分別沿圖36中的線D-D'和E-E'截取的橫截面視圖。 36 and 37A to 37B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27 . Figure 36 shows a partial layout of a bidirectional switching device. 37A to 37B are cross-sectional views taken along lines DD' and EE' in FIG. 36, respectively.

圖38和圖39A至39B顯示基於圖27的電路圖的根據另一實施例的雙向切換器件的結構。圖38為雙向切換器件的部分佈局。圖39A至39B為分別沿圖38中的線D-D'和E-E'截取的橫截面視圖。 38 and 39A to 39B show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 27 . Figure 38 shows a partial layout of a bidirectional switching device. 39A to 39B are cross-sectional views taken along lines DD' and EE' in FIG. 38, respectively.

圖40為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件的電路框圖。 Figure 40 is a circuit block diagram of a bidirectional switching device with substrate potential management capabilities in accordance with some embodiments of the present invention.

圖41描繪基於圖40的電路框圖的根據一些實施例的雙向切換器件的電路圖。 Figure 41 depicts a circuit diagram of a bidirectional switching device according to some embodiments based on the circuit block diagram of Figure 40.

圖42A至42D描繪圖41中的雙向切換器件的操作機構。 Figures 42A to 42D depict the operating mechanism of the bidirectional switching device in Figure 41.

圖43和圖44A至44E顯示基於圖41中的電路圖的雙向切換器件的結構。圖43為雙向切換器件的部分佈局。圖44A至44E為分別沿圖43中的線A-A'、B-B'、C-C'、D-D'和E-E'截取的橫截面視圖。 FIG. 43 and FIGS. 44A to 44E show the structure of the bidirectional switching device based on the circuit diagram in FIG. 41 . Figure 43 shows a partial layout of a bidirectional switching device. 44A to 44E are cross-sectional views taken along lines AA', BB', CC', DD', and EE' in FIG. 43, respectively.

圖45和圖46顯示基於圖41的電路圖的根據另一實施例的雙向切換器件的結構。圖45為雙向切換器件的部分佈局。圖46為沿圖45中的線E-E'截取的橫截面視圖。 45 and 46 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41 . Figure 45 shows a partial layout of a bidirectional switching device. Figure 46 is a cross-sectional view taken along line EE' in Figure 45.

圖47和圖48顯示基於圖41的電路圖的根據另一實施例的雙向切換器件的結構。圖47為雙向切換器件的部分佈局。圖48為沿圖47中的線E-E'截取的橫截面視圖。 47 and 48 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41 . Figure 47 shows a partial layout of a bidirectional switching device. Figure 48 is a cross-sectional view taken along line EE' in Figure 47.

圖49和圖50顯示基於圖41的電路圖的根據另一實施例的雙向切換器件的結構。圖49為雙向切換器件的部分佈局。圖50為沿圖49中的線E-E'截取的橫截面視圖。 49 and 50 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41 . Figure 49 shows a partial layout of a bidirectional switching device. Figure 50 is a cross-sectional view taken along line EE' in Figure 49.

圖51和圖52顯示基於圖41的電路圖的根據另一實施例的雙向切換器件的結構。圖51為雙向切換器件的部分佈局。圖52為沿圖51中的線E-E'截取的橫截面視圖。 51 and 52 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41 . Figure 51 shows a partial layout of a bidirectional switching device. FIG. 52 is a cross-sectional view taken along line EE' in FIG. 51 .

圖53和圖54顯示基於圖41的電路圖的根據另一實施例的雙向切換器件的結構。圖53為雙向切換器件的部分佈局。圖54為沿圖53中的線E-E'截取的橫截面視圖。 53 and 54 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 41 . Figure 53 shows a partial layout of a bidirectional switching device. Figure 54 is a cross-sectional view taken along line EE' in Figure 53.

圖55A和55B描繪基於圖40的電路框圖的根據其它實施例的雙向切換器件的電路圖。 55A and 55B depict circuit diagrams of bidirectional switching devices according to other embodiments based on the circuit block diagram of FIG. 40 .

圖56A至56D描繪圖55A/55B中的雙向切換器件的操作機構。 Figures 56A to 56D depict the operating mechanism of the bidirectional switching device of Figures 55A/55B.

圖57和圖58A至58D顯示基於圖55A/55B中的電路圖的雙向切換器件的結構。圖57為雙向切換器件的部分佈局。圖58A至58D為分別沿圖57中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。 57 and 58A to 58D show the structure of a bidirectional switching device based on the circuit diagram in FIGS. 55A/55B. Figure 57 shows a partial layout of a bidirectional switching device. 58A to 58D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 57, respectively.

圖59為基於圖55A/55B中的電路圖的雙向切換器件的部分佈局。 Figure 59 is a partial layout of a bidirectional switching device based on the circuit diagram in Figures 55A/55B.

圖60為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件的電路框圖。 Figure 60 is a circuit block diagram of a bidirectional switching device with substrate potential management capabilities in accordance with some embodiments of the present invention.

圖61描繪基於圖60的電路框圖的根據一些實施例的雙向切換器件的電路圖。 Figure 61 depicts a circuit diagram of a bidirectional switching device according to some embodiments based on the circuit block diagram of Figure 60.

圖62A至62D描繪圖61中的雙向切換器件的操作機構。 Figures 62A to 62D depict the operating mechanism of the bidirectional switching device in Figure 61.

圖63和圖64A至64E顯示基於圖61中的電路圖的雙向切換器件的結構。圖63為雙向切換器件的部分佈局。圖64A至64E為分別沿圖63中的線A-A'、B-B'、C-C'、D-D'和E-E'截取的橫截面視圖。 FIG. 63 and FIGS. 64A to 64E show the structure of a bidirectional switching device based on the circuit diagram in FIG. 61 . Figure 63 shows a partial layout of a bidirectional switching device. 64A to 64E are cross-sectional views taken along lines AA', BB', CC', DD', and EE' in FIG. 63, respectively.

圖65和圖66顯示基於圖61的電路圖的根據另一實施例的雙向切換器件的結構。圖65為雙向切換器件的部分佈局。圖66為沿圖65中的線E-E'截取的橫截面視圖。 65 and 66 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61 . Figure 65 shows a partial layout of a bidirectional switching device. Figure 66 is a cross-sectional view taken along line EE' in Figure 65.

圖67和圖68顯示基於圖61的電路圖的根據另一實施例的雙向切換器件的結構。圖67為雙向切換器件的部分佈局。圖68為沿圖67中的線E-E'截取的橫截面視圖。 67 and 68 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61 . Figure 67 shows a partial layout of a bidirectional switching device. Figure 68 is a cross-sectional view taken along line EE' in Figure 67.

圖69和圖70顯示基於圖61的電路圖的根據另一實施例的雙向切換器件的結構。圖69為雙向切換器件的部分佈局。圖70為沿圖69中的線E-E'截取的橫截面視圖。 69 and 70 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61 . Figure 69 shows a partial layout of a bidirectional switching device. Figure 70 is a cross-sectional view taken along line EE' in Figure 69.

圖71和圖72顯示基於圖61的電路圖的根據另一實施例的雙向切換器件的結構。圖71為雙向切換器件的部分佈局。圖72為沿圖71中的線E-E'截取的橫截面視圖。 71 and 72 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61 . Figure 71 shows a partial layout of a bidirectional switching device. FIG. 72 is a cross-sectional view taken along line EE' in FIG. 71 .

圖73和圖74顯示基於圖61的電路圖的根據另一實施例的雙向切換器件的結構。圖73為雙向切換器件的部分佈局。圖74為沿圖73中的線E-E'截取的橫截面視圖。 73 and 74 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIG. 61 . Figure 73 shows a partial layout of a bidirectional switching device. Figure 74 is a cross-sectional view taken along line EE' in Figure 73.

圖75A和75B描繪基於圖40的電路框圖的根據其它實施例的雙向切換器件的電路圖。 75A and 75B depict circuit diagrams of bidirectional switching devices according to other embodiments based on the circuit block diagram of FIG. 40.

圖76A至76D描繪圖75A/75B中的雙向切換器件的操作機構。 Figures 76A to 76D depict the operating mechanism of the bidirectional switching device of Figures 75A/75B.

圖77和圖78A至78D顯示基於圖75A/75B中的電路圖的雙向切換器件的結構。圖77為雙向切換器件的部分佈局。圖78A至78D為分別沿圖77中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。 77 and 78A to 78D show the structure of a bidirectional switching device based on the circuit diagram in FIGS. 75A/75B. Figure 77 shows a partial layout of a bidirectional switching device. 78A to 78D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 77, respectively.

圖79為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件的電路框圖。 Figure 79 is a circuit block diagram of a bidirectional switching device with substrate potential management capabilities in accordance with some embodiments of the present invention.

圖80A和80B描繪基於圖79的電路框圖的根據一些實施例的雙向切換器件的電路圖。 Figures 80A and 80B depict circuit diagrams of a bidirectional switching device according to some embodiments based on the circuit block diagram of Figure 79.

圖81A至81D描繪圖80A/80B中的雙向切換器件的操作機構。 Figures 81A to 81D depict the operating mechanism of the bidirectional switching device of Figures 80A/80B.

圖82和圖83A至83E顯示基於圖80A/80B中的電路圖的雙向切換器件的結構。圖82為雙向切換器件的部分佈局。圖83A至83E為分別沿圖82中的線A-A'、B-B'、C-C'、D-D'和E-E'截取的橫截面視圖。 82 and 83A to 83E show the structure of a bidirectional switching device based on the circuit diagram in FIGS. 80A/80B. Figure 82 shows a partial layout of a bidirectional switching device. 83A to 83E are cross-sectional views taken along lines AA', BB', CC', DD', and EE' in FIG. 82, respectively.

圖84和圖85顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖84為雙向切換器件的部分佈局。圖85為沿圖84中的線E-E'截取的橫截面視圖。 84 and 85 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 84 shows a partial layout of a bidirectional switching device. Figure 85 is a cross-sectional view taken along line EE' in Figure 84.

圖86和圖87顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖86為雙向切換器件的部分佈局。圖87為沿圖86中的線E-E'截取的橫截面視圖。 86 and 87 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 86 shows a partial layout of a bidirectional switching device. Figure 87 is a cross-sectional view taken along line EE' in Figure 86.

圖88和圖89顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖88為雙向切換器件的部分佈局。圖89為沿圖88中的線E-E'截取的橫截面視圖。 88 and 89 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 88 shows a partial layout of a bidirectional switching device. Figure 89 is a cross-sectional view taken along line EE' in Figure 88.

圖90和圖91顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖90為雙向切換器件的部分佈局。圖91為沿圖90中的線E-E'截取的橫截面視圖。 90 and 91 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 90 shows a partial layout of a bidirectional switching device. Figure 91 is a cross-sectional view taken along line EE' in Figure 90.

圖92和圖93顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖92為雙向切換器件的部分佈局。圖93為沿圖92中的線E-E'截取的橫截面視圖。 92 and 93 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 92 shows a partial layout of a bidirectional switching device. Figure 93 is a cross-sectional view taken along line EE' in Figure 92.

圖94A和94B描繪基於圖79的電路框圖的根據一些實施例的另一雙向切換器件的電路圖。 94A and 94B depict a circuit diagram of another bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 79.

圖95A至95D描繪圖94A/94B中的雙向切換器件的操作機構。 Figures 95A to 95D depict the operating mechanism of the bidirectional switching device of Figures 94A/94B.

圖96和圖97A至97D顯示基於圖94A/94B中的電路圖的雙向切換器件的結構。圖96為雙向切換器件的部分佈局。圖97A至97D為分別沿圖96中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。 FIG. 96 and FIGS. 97A to 97D show the structure of a bidirectional switching device based on the circuit diagram in FIGS. 94A/94B. Figure 96 shows a partial layout of a bidirectional switching device. 97A to 97D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 96, respectively.

圖98和圖99顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖98為雙向切換器件的部分佈局。圖99為沿圖98中的線D-D'截取的橫截面視圖。 98 and 99 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 98 shows a partial layout of a bidirectional switching device. Figure 99 is a cross-sectional view taken along line DD' in Figure 98.

圖100和圖101顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖100為雙向切換器件的部分佈局。圖101為沿圖100中的線D-D'截取的橫截面視圖。 100 and 101 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 100 shows a partial layout of a bidirectional switching device. Figure 101 is a cross-sectional view taken along line DD' in Figure 100.

圖102和圖103顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖102為雙向切換器件的部分佈局。圖103為沿圖102中的線D-D'截取的橫截面視圖。 102 and 103 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 102 shows a partial layout of a bidirectional switching device. Figure 103 is a cross-sectional view taken along line DD' in Figure 102.

圖104和圖105顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖104為雙向切換器件的部分佈局。圖105為沿圖104中的線D-D'截取的橫截面視圖。 104 and 105 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 104 shows a partial layout of a bidirectional switching device. Figure 105 is a cross-sectional view taken along line DD' in Figure 104.

圖106和圖107顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖106為雙向切換器件的部分佈局。圖107為沿圖106中的線D-D'截取的橫截面視圖。 106 and 107 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 106 shows a partial layout of a bidirectional switching device. Figure 107 is a cross-sectional view taken along line DD' in Figure 106.

圖108為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件的電路框圖。 Figure 108 is a circuit block diagram of a bidirectional switching device with substrate potential management capabilities in accordance with some embodiments of the present invention.

圖109A和109B描繪基於圖108的電路框圖的根據一些實施例的雙向切換器件的電路圖。 Figures 109A and 109B depict circuit diagrams of a bidirectional switching device according to some embodiments based on the circuit block diagram of Figure 108.

圖110A至110D描繪圖109A/109B中的雙向切換器件的操作機構。 Figures 110A to 110D depict the operating mechanism of the bidirectional switching device of Figures 109A/109B.

圖111和圖112A至112E顯示基於圖109A/109B中的電路圖的雙向切換器件的結構。圖111為雙向切換器件的部分佈局。圖112A至112E為分別沿圖111中的線A-A'、B-B'、C-C'、D-D'和E-E'截取的橫截面視圖。 111 and 112A to 112E show the structure of a bidirectional switching device based on the circuit diagram in FIGS. 109A/109B. Figure 111 shows a partial layout of a bidirectional switching device. 112A to 112E are cross-sectional views taken along lines AA', BB', CC', DD', and EE', respectively, in FIG. 111 .

圖113和圖114顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件的結構。圖113為雙向切換器件的部分佈局。圖114為沿圖113中的線E-E'截取的橫截面視圖。 113 and 114 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 109A/109B. Figure 113 shows a partial layout of a bidirectional switching device. FIG. 114 is a cross-sectional view taken along line EE' in FIG. 113 .

圖115和圖116顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件的結構。圖115為雙向切換器件的部分佈局。圖116為沿圖115中的線E-E'截取的橫截面視圖。 115 and 116 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 109A/109B. Figure 115 shows a partial layout of a bidirectional switching device. FIG. 116 is a cross-sectional view taken along line EE' in FIG. 115 .

圖117和圖118顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件的結構。圖117為雙向切換器件的部分佈局。圖118為沿圖117中的線E-E'截取的橫截面視圖。 117 and 118 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 109A/109B. Figure 117 shows a partial layout of a bidirectional switching device. FIG. 118 is a cross-sectional view taken along line EE' in FIG. 117 .

圖119和圖120顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件的結構。圖119為雙向切換器件的部分佈局。圖120為沿圖119中的線E-E'截取的橫截面視圖。 119 and 120 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 109A/109B. Figure 119 shows a partial layout of a bidirectional switching device. Figure 120 is a cross-sectional view taken along line EE' in Figure 119 .

圖121和圖122顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件的結構。圖121為雙向切換器件的部分佈局。圖122為沿圖121中的線E-E'截取的橫截面視圖。 121 and 122 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 109A/109B. Figure 121 shows a partial layout of a bidirectional switching device. FIG. 122 is a cross-sectional view taken along line EE' in FIG. 121 .

圖123A和123B描繪基於圖79的電路框圖的根據一些實施例的另一雙向切換器件的電路圖。 123A and 123B depict a circuit diagram of another bidirectional switching device according to some embodiments based on the circuit block diagram of FIG. 79.

圖124A至124D描繪圖123A/123B中的雙向切換器件的操作機構。 Figures 124A to 124D depict the operating mechanism of the bidirectional switching device of Figures 123A/123B.

圖125和圖126A至126D顯示基於圖123A/123B中的電路圖的雙向切換器件的結構。圖125為雙向切換器件的部分佈局。圖126A至126D為分別沿圖125中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。 125 and 126A to 126D show the structure of a bidirectional switching device based on the circuit diagram in FIGS. 123A/123B. Figure 125 shows a partial layout of a bidirectional switching device. 126A to 126D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 125, respectively.

圖127和圖128顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖127為雙向切換器件的部分佈局。圖128為沿圖127中的線D-D'截取的橫截面視圖。 127 and 128 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 127 shows a partial layout of a bidirectional switching device. Figure 128 is a cross-sectional view taken along line DD' in Figure 127.

圖129和圖130顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖129為雙向切換器件的部分佈局。圖130為沿圖129中的線D-D'截取的橫截面視圖。 129 and 130 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 129 shows a partial layout of a bidirectional switching device. Figure 130 is a cross-sectional view taken along line DD' in Figure 129.

圖131和圖132顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖131為雙向切換器件的部分佈局。圖132為沿圖131中的線D-D'截取的橫截面視圖。 131 and 132 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 131 shows a partial layout of a bidirectional switching device. Figure 132 is a cross-sectional view taken along line DD' in Figure 131.

圖133和圖134顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖133為雙向切換器件的部分佈局。圖134為沿圖133中的線D-D'截取的橫截面視圖。 133 and 134 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 133 shows a partial layout of a bidirectional switching device. Figure 134 is a cross-sectional view taken along line DD' in Figure 133.

圖135和圖136顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件的結構。圖135為雙向切換器件的部分佈局。圖136為沿圖135中的線D-D'截取的橫截面視圖。 135 and 136 show the structure of a bidirectional switching device according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 135 shows a partial layout of a bidirectional switching device. Figure 136 is a cross-sectional view taken along line DD' in Figure 135.

貫穿圖式和具體實施方式使用共用參考標號來指示相同或類似元件。根據結合附圖作出的以下詳細描述將容易理解本公開的實施例。 Common reference numbers are used throughout the drawings and the detailed description to refer to the same or similar elements. Embodiments of the present disclosure will be readily understood from the following detailed description taken in conjunction with the accompanying drawings.

相對於某一元件或元件群組或元件或元件群組的某一平面而指定空間描述，例如“上方”、“下方”、“向上”、“左”、“右”、“向下”、“頂部”、“底部”、“豎直”、“水準”、“側”、“較高”、“較低”、“上部”、“之上”、“之下”等等，以用於定向如相關聯圖中所示的一個或多個元件。應理解，本文中所使用的空間描述僅出於圖示的目的，且本文中所描述的結構的實際實施方案可以任何定向或方式在空間上佈置，前提為本公開的實施例的優點不因這種佈置而有偏差。 Specifies a spatial description relative to a component or group of components or a plane of a component or group of components, such as "above", "below", "up", "left", "right", "down", "Top", "bottom", "vertical", "horizontal", "side", "higher", "lower", "upper", "above", "below", etc., for Orient one or more components as shown in the associated diagram. It is to be understood that the spatial descriptions used herein are for purposes of illustration only and that actual implementations of the structures described herein may be spatially arranged in any orientation or manner, provided that the advantages of the embodiments of the present disclosure are not diminished. This arrangement is biased.

另外，應注意，在實際器件中，歸因於器件製造條件，描繪為近似矩形的各種結構的實際形狀可能是曲形、具有圓形邊緣、具有稍微不均勻的厚度等。使用直線和直角只是為了方便展示層和特徵。 Additionally, it should be noted that in actual devices, due to device fabrication conditions, the actual shapes of various structures depicted as approximately rectangular may be curved, have rounded edges, have slightly uneven thicknesses, etc. Straight lines and right angles are used simply to facilitate the presentation of layers and features.

在以下描述中，半導體器件/裸片/封裝、其製造方法和其類似物闡述為優選實例。所屬領域的技術人員將顯而易見，可在不脫離本公開的範圍和精神的情況下作出修改，包含添加和/或替代。可省略特定細節以免使本公開模糊不清；然而，編寫本公開是為了使所屬領域的技術人員能夠在不進行不當實驗的情況下實踐本文中的教示。 In the following description, semiconductor devices/die/packages, manufacturing methods thereof, and the like are set forth as preferred examples. It will be apparent to those skilled in the art that modifications may be made, including additions and/or substitutions, without departing from the scope and spirit of the disclosure. Specific details may be omitted so as not to obscure the disclosure; however, the disclosure is prepared to enable those skilled in the art to practice the teachings herein without undue experimentation.

圖1為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件1的電路框圖。 Figure 1 is a circuit block diagram of a bidirectional switching device 1 with substrate potential management capability according to some embodiments of the present invention.

如圖1中所示，雙向切換器件1具有控制節點CTRL、第一電力/負載節點P/L1、第二電力/負載節點P/L2、參考節點REF和主基板。 As shown in FIG. 1 , the bidirectional switching device 1 has a control node CTRL, a first power/load node P/L1 , a second power/load node P/L2 , a reference node REF, and a main substrate.

雙向切換器件1包括：氮化物基雙側電晶體Qm；和基板電位管理電路，其配置成用於管理雙向切換器件1的主基板的電位。 The bidirectional switching device 1 includes: a nitride-based double-sided transistor Q m ; and a substrate potential management circuit configured to manage the potential of a main substrate of the bidirectional switching device 1 .

雙側電晶體Qm可具有電連接到控制節點的主閘極端子Gm、電連接到第一電力/負載節點的第一源極/汲極端子S/D1、電連接到第二電力/負載節點的第二源極/汲極端子S/D2，和電連接到主基板的主基板端子SUB。 The double-sided transistor Q m may have a main gate terminal G m electrically connected to the control node, a first source/drain terminal S/D1 electrically connected to the first power/load node, a second power/drain terminal S/D1 electrically connected to the second power/load node The second source/drain terminal S/D2 of the load node, and the main substrate terminal SUB are electrically connected to the main substrate.

第一源極/汲極端子S/D1和第二源極/汲極端子S/D2可取決於在其間流動的電流的方向而充當源極或汲極。舉例來說，當電流從S/D1流動到S/D2時，端子S/D1充當源極，而端子S/D2充當雙側電晶體Qm的汲極。另一方面，當電流從S/D2流動到S/D1時，端子S/D1充當汲極，而S/D2充當雙側電晶體Qm的源極。 The first source/drain terminal S/D1 and the second source/drain terminal S/D2 may function as a source or a drain depending on the direction of current flowing therebetween. For example, when current flows from S/D1 to S/D2, terminal S/D1 acts as the source and terminal S/D2 acts as the drain of the double-sided transistor Qm . On the other hand, when current flows from S/D2 to S/D1, the terminal S/D1 acts as a drain while S/D2 acts as a source of the double-sided transistor Qm .

雙向切換器件可在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓的電壓下偏置)下在第一方向上操作，從而在雙側電晶體Qm切換到ON時產生在從第一源極/汲極端子到第二源極/汲極端子的方向上流動的電流。舉例來說，在高側應用中，雙向切換器件的第一電力/負載節點可連接到電力供應器，且所提到的第二電力/負載可連接到負載。 The bidirectional switching device is operable in a first direction in a first operating mode in which a first power/load node is biased at a voltage higher than a voltage applied to a second power/load node such that the bidirectional transistor Switching Q m to ON produces a current flowing in the direction from the first source/drain terminal to the second source/drain terminal. For example, in a high-side application, the first power/load node of the bidirectional switching device may be connected to the power supply, and the second power/load node mentioned may be connected to the load.

替代地，雙向切換器件可在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓的電壓下偏置)下在第二方向上操作，從而在雙側電晶體Qm切換到ON時產生在從第二源極/汲極端子到第一源極/ 汲極端子的方向上流動的電流。舉例來說，在高側應用中，雙向切換器件的第一電力/負載節點可連接到負載，且所提到的第二電力/負載可連接到電力供應器。 Alternatively, the bidirectional switching device may operate in the second direction in a second operating mode (in which the second power/load node is biased at a voltage higher than the voltage applied to the first power/load node), thereby operating in the bidirectional Switching the side transistor Qm to ON produces a current flowing in the direction from the second source/drain terminal to the first source/drain terminal. For example, in a high-side application, the first power/load node of the bidirectional switching device may be connected to the load, and the second power/load mentioned may be connected to the power supply.

基板電位管理電路可包括第一電位穩定元件F1，所述第一電位穩定元件F1具有電連接到控制節點的控制端子、電連接到第一電力/負載節點的第一傳導端子、電連接到主基板的第二傳導端子和電連接到主基板的基板端子。 The substrate potential management circuit may include a first potential stabilizing element F1 having a control terminal electrically connected to the control node, a first conductive terminal electrically connected to the first power/load node, a main The second conductive terminal of the substrate is electrically connected to the substrate terminal of the main substrate.

基板電位管理電路可進一步包括第二電位穩定元件F2，所述第二電位穩定元件F2具有電連接到控制節點的控制端子、電連接到第二電力/負載節點的第一傳導端子、電連接到主基板的第二傳導端子和電連接到主基板的基板端子。 The substrate potential management circuit may further include a second potential stabilizing element F2 having a control terminal electrically connected to the control node, a first conductive terminal electrically connected to the second power/load node, A second conductive terminal of the main substrate and a substrate terminal electrically connected to the main substrate.

主基板可通過參考節點電連接到第三電位穩定元件F3。 The main substrate may be electrically connected to the third potential stabilizing element F3 through the reference node.

當將高電平電壓施加到控制節點時，第一電位穩定元件F1可具有低於第三電位穩定元件F3的第三電阻的第一電阻，且第二電位穩定元件F2可具有低於第三電阻的第二電阻，使得主基板的電位基本上等於第一和第二電力/負載節點的電位中的較低一個。 When a high-level voltage is applied to the control node, the first potential stabilizing element F1 may have a first resistance lower than the third resistance of the third potential stabilizing element F3, and the second potential stabilizing element F2 may have a lower resistance than the third resistance. The second resistance of the resistor is such that the potential of the main substrate is substantially equal to the lower of the potentials of the first and second power/load nodes.

當將低電平電壓施加到控制節點時，第一電阻可高於第三電阻，且第二電阻可高於第三電阻，使得主基板的電位基本上等於接地電位。 When a low-level voltage is applied to the control node, the first resistance may be higher than the third resistance, and the second resistance may be higher than the third resistance, so that the potential of the main substrate is substantially equal to the ground potential.

圖2描繪基於圖1的電路框圖的根據一些實施例的雙向切換器件11的電路圖。參考圖2。第一電位穩定元件F1可包括第一基板耦合電晶體Q1，所述第一基板耦合電晶體Q1具有電連接到控制節點的第一閘極端子G1、電連接到第一電力/負載節點的第一汲極端子D1和電連接到主基板的第一源極端子S1。 FIG. 2 depicts a circuit diagram of a bidirectional switching device 11 according to some embodiments based on the circuit block diagram of FIG. 1 . Refer to Figure 2. The first potential stabilizing element F1 may include a first substrate coupling transistor Q1 having a first gate terminal G1 electrically connected to the control node, a first gate terminal G1 electrically connected to the first power/load node. A drain terminal D1 and a first source terminal S1 are electrically connected to the main substrate.

第二電位穩定元件F2可包括第二基板耦合電晶體Q2，所述第二基板耦合電晶體Q2具有電連接到控制節點的第二閘極端子G2、電連接到第二源極/汲極端子S/D2的第二汲極端子D2和電連接到主基板的第二源極端子S2。 The second potential stabilizing element F2 may include a second substrate coupling transistor Q2 having a second gate terminal G2 electrically connected to the control node, a second source/drain terminal electrically connected The second drain terminal D2 of S/D2 and the second source terminal S2 are electrically connected to the main substrate.

第一基板耦合電晶體Q1和第二基板耦合電晶體Q2可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 The first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 may be constructed of various types of transistors, including but not limited to GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction field effect transistor ( JFET) and static sensing transistor (SIT).

第三電位穩定元件F3可為電阻器R1，所述電阻器R1具有通過參考節點連接到主基板的第一端子，和連接到接地的第二端子。 The third potential stabilizing element F3 may be a resistor R1 having a first terminal connected to the main substrate through a reference node, and a second terminal connected to the ground.

電阻器R1可選擇以具有比第一基板耦合電晶體的導通電阻和第二基板耦合電晶體的導通電阻高得多的電阻值。 Resistor R1 may be selected to have a resistance value that is much higher than the on-resistance of the first substrate coupling transistor and the on-resistance of the second substrate coupling transistor.

電阻器R1可選擇以具有比第一基板耦合電晶體的截止電阻和第二基板耦合電晶體的截止電阻低得多的電阻值。 Resistor R1 may be selected to have a resistance value that is much lower than the off-resistance of the first substrate coupling transistor and the off-resistance of the second substrate coupling transistor.

舉例來說，電阻器R1可選擇以具有在大約0.1Ω到大約1GΩ範圍內的電阻值。 For example, resistor R1 may be selected to have a resistance value in the range of approximately 0.1Ω to approximately 1GΩ.

圖3A和圖3B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的圖2中的雙向切換器件11的操作機構。 3A and 3B depict the bidirectional switching of FIG. 2 in a first mode of operation in which the first power/load node is biased at a voltage VH higher than the voltage VL applied to the second power/load node. Operating mechanism of device 11.

參考圖3A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2具有分別等於或高於其閾值電壓的其閘極-源極電壓時，雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2導通，基板的電位Vsub通過下式給出：Vsub=VL+Vm,on*Rs2,on/(Rs2,on+Rs1,on)，其中Rs1,on為第一基板耦合電晶體Q1的導通電 阻，Rs2,on為第二基板耦合電晶體Q2的導通電阻，且Vm,on為雙側電晶體Qm在其導通時的汲極-源極電壓。由於Vm,on極小且導通電阻Rs1,on和Rs2,on比電阻R大得多，所以基板的電位Vsub基本上等於VL+Vm,on。 Refer to Figure 3A. When the high-level voltage V ON is applied to the control node such that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 have their gates equal to or higher than their threshold voltages respectively - When the source voltage is high, the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned on, and the potential V sub of the substrate is given by the following formula: V sub =V L +V m,on *R s2,on /(R s2,on +R s1,on ), where R s1,on is the on-resistance of the first substrate coupling transistor Q1, R s2,on is the on-resistance of the second substrate coupling transistor Q2 , and V m,on is the drain-source voltage of the double-sided transistor Q m when it is turned on. Since V m,on is extremely small and the on-resistances R s1,on and R s2,on are much larger than the resistance R, the potential V sub of the substrate is basically equal to V L +V m,on .

參考圖3B。當將低電平電壓施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2具有分別低於其閾值電壓的其閘極-源極電壓時，雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2截止。基板的電位Vsub接著通過下式給出：Vsub=Vm,off*R/(Rs1,off+R)，其中R為電阻器R1的電阻，Rs1,off為第一基板耦合電晶體Q1的截止電阻，且Vm,off為雙側電晶體Qm在其截止時的汲極-源極電壓。由於第一基板耦合電晶體Q1的截止電阻Rs1,off比電阻R大得多，所以基板的電位Vsub基本上等於0V，也就是接地電位。 Refer to Figure 3B. When a low level voltage is applied to the control node such that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 have their gate-source voltages respectively lower than their threshold voltages , the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned off. The potential V sub of the substrate is then given by the following formula: V sub =V m,off *R/(R s1,off +R), where R is the resistance of resistor R1 and R s1,off is the first substrate coupling resistance. The off-resistance of crystal Q1, and V m,off is the drain-source voltage of double-sided transistor Q m when it is off. Since the off-resistance R s1,off of the first substrate coupling transistor Q1 is much larger than the resistance R, the potential V sub of the substrate is basically equal to 0V, which is the ground potential.

圖3C和圖3D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的圖2中的雙向切換器件11的操作機構。 3C and 3D depict bidirectional switching in FIG. 2 in a second mode of operation in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node. Operating mechanism of device 11.

參考圖3C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2具有分別等於或高於其閾值電壓的其閘極-源極電壓時，雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2導通，基板的電位Vsub通過下式給出：Vsub=VL+Vm,on*Rs1,on/(Rs1,on+Rs2,on)。由於Vm,on極小且導通電阻Rs1,on和Rs2,on比電阻R大得多，所以基板的電位Vsub基本上等於VL+Vm,on。 Refer to Figure 3C. When the high-level voltage V ON is applied to the control node such that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 have their gates equal to or higher than their threshold voltages respectively - When the source voltage is high, the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned on, and the potential V sub of the substrate is given by the following formula: V sub =V L +V m,on *R s1,on /(R s1,on +R s2,on ). Since V m,on is extremely small and the on-resistances R s1,on and R s2,on are much larger than the resistance R, the potential V sub of the substrate is basically equal to V L +V m,on .

參考圖3D。當將低電平電壓施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2具有分別低於其閾值電壓的其閘極-源極電壓時，雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合 電晶體Q2截止。基板的電位Vsub接著通過下式給出：Vsub=Vm,off*R/(Rs2,off+R)，其中Rs2,off為第二基板耦合電晶體Q2的截止電阻。由於第二基板耦合電晶體Q2的截止電阻Rs2,off比電阻R大得多，所以基板的電位Vsub基本上等於0V，也就是接地電位。 Refer to Figure 3D. When a low level voltage is applied to the control node such that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 have their gate-source voltages respectively lower than their threshold voltages , the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned off. The potential V sub of the substrate is then given by the following formula: V sub =V m,off *R/(R s2,off +R), where R s2,off is the off-resistance of the second substrate coupling transistor Q2. Since the off-resistance R s2,off of the second substrate coupling transistor Q2 is much larger than the resistance R, the potential V sub of the substrate is basically equal to 0V, which is the ground potential.

氮化物基雙側電晶體Qm可與第一電位穩定元件F1、第二電位穩定元件F2和第三電位穩定元件F3集成以形成積體電路(IC)晶片。因此，圖2的雙向切換器件11可通過將氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2集成在IC晶片中而形成。 The nitride-based double-sided transistor Qm may be integrated with the first, second, and third potential stabilizing elements F1, F2, and F3 to form an integrated circuit (IC) chip. Therefore, the bidirectional switching device 11 of FIG. 2 can be formed by integrating the nitride-based double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 in an IC wafer.

圖4和5A至5D顯示基於圖2的電路圖的雙向切換器件11的結構。圖4為展示可構成雙向切換器件11中的電晶體的部分的一些元件當中的關係的雙向切換器件11的部分佈局。圖5A至5D為分別沿圖4中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。如下提供雙向切換器件11的更多結構細節。 4 and 5A to 5D show the structure of the bidirectional switching device 11 based on the circuit diagram of FIG. 2 . FIG. 4 is a partial layout of bidirectional switching device 11 illustrating the relationship among some of the elements that may form part of the transistor in bidirectional switching device 11 . 5A to 5D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 4, respectively. Further structural details of bidirectional switching device 11 are provided below.

參考圖4和5A至5D，雙向切換器件11可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、第二鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層154和一個或多個鎵穿孔(TGV)162和導電墊170。 Referring to FIGS. 4 and 5A to 5D , the bidirectional switching device 11 may include a substrate 102 , a first nitride-based semiconductor layer 104 , a second nitride-based semiconductor layer 106 , a gate structure 110 , an S/D electrode 116 , and a first passivation layer. 124. The second passivation layer 126, the third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more a second conductive trace 146, a protective layer 154 and one or more gallium vias (TGVs) 162 and conductive pads 170.

基板102可為半導體基板。基板102的示範性材料可包含例如但不限於Si、SiGe、SiC、砷化鎵、p摻雜的Si、n摻雜的Si、藍寶石、絕緣體上半導體(例如絕緣體上矽(SOI))或其它合適的半導體材料。在一些實施例中，基板102可包含例如但不限於III族元素、IV族元素、V族元素或其組合(例如，III-V 化合物)。在其它實施例中，基板102可包含例如但不限於一個或多個其它特徵，例如摻雜區、埋層、外延(epi)層，或其組合。 The substrate 102 may be a semiconductor substrate. Exemplary materials for substrate 102 may include, for example, but not limited to, Si, SiGe, SiC, gallium arsenide, p-doped Si, n-doped Si, sapphire, semiconductor-on-insulator (eg, silicon-on-insulator (SOI)), or other Suitable semiconductor materials. In some embodiments, the substrate 102 may include, for example, but not limited to, Group III elements, Group IV elements, Group V elements, or combinations thereof (e.g., III-V compound). In other embodiments, substrate 102 may include, for example, but not limited to, one or more other features, such as doped regions, buried layers, epitaxial (epi) layers, or combinations thereof.

氮化物基半導體層104安置在基板102之上。氮化物基半導體層104的示範性材料可包含例如但不限於氮化物或III-V族化合物，例如GaN、AlN、InN、InxAlyGa(1-x-y)N(其中x+y

Figure 111104153-A0305-02-0020-1
1)、AlyGa(1-y)N(其中y
Figure 111104153-A0305-02-0020-6
1)。氮化物基半導體層104的示範性結構可包含例如但不限於多層結構、超晶格結構和組成梯度結構。 The nitride-based semiconductor layer 104 is disposed over the substrate 102 . Exemplary materials for the nitride-based semiconductor layer 104 may include, for example, but not limited to, nitrides or III-V compounds, such as GaN, AIN, InN , InxAlyGa (1-xy) N (where x+y
Figure 111104153-A0305-02-0020-1
1), Al y Ga (1-y) N (where y
Figure 111104153-A0305-02-0020-6
1). Exemplary structures of the nitride-based semiconductor layer 104 may include, for example, but not limited to, multilayer structures, superlattice structures, and compositionally graded structures.

氮化物基半導體層106安置在氮化物基半導體層104上。氮化物基半導體層106的示範性材料可包含例如但不限於氮化物或III-V族化合物，例如GaN、AlN、InN、InxAlyGa(1-x-y)N(其中x+y

Figure 111104153-A0305-02-0020-3
1)、AlyGa(1-y)N(其中y
Figure 111104153-A0305-02-0020-5
1)。 The nitride-based semiconductor layer 106 is disposed on the nitride-based semiconductor layer 104 . Exemplary materials for the nitride-based semiconductor layer 106 may include, for example, but not limited to, nitrides or III-V compounds, such as GaN, AlN, InN , InxAlyGa (1-xy) N (where x+y
Figure 111104153-A0305-02-0020-3
1), Al y Ga (1-y) N (where y
Figure 111104153-A0305-02-0020-5
1).

選擇氮化物基半導體層104和106的示範性材料以使得氮化物基半導體層106具有大於氮化物基半導體層104的帶隙的帶隙(即，禁帶寬度)，這使得其電子親和力彼此不同且在其間形成異質結。舉例來說，當氮化物基半導體層104為帶隙大約為3.4eV的未摻雜GaN層時，氮化物基半導體層106可選擇為帶隙大約為4.0eV的AlGaN層。因此，氮化物基半導體層104和106可分別充當溝道層和勢壘層。在溝道層與勢壘層之間的接合介面處產生三角阱電位，使得電子在三角阱電位中累積，由此產生鄰近於異質結的二維電子氣體(2DEG)區。因此，雙向切換器件可用於包含一個或多個GaN基高電子遷移率電晶體(HEMT)。 Exemplary materials of nitride-based semiconductor layers 104 and 106 are selected such that nitride-based semiconductor layer 106 has a band gap (i.e., band gap) that is larger than that of nitride-based semiconductor layer 104 , which causes their electron affinities to differ from each other. And a heterojunction is formed between them. For example, when the nitride-based semiconductor layer 104 is an undoped GaN layer with a band gap of approximately 3.4 eV, the nitride-based semiconductor layer 106 may be selected to be an AlGaN layer with a band gap of approximately 4.0 eV. Therefore, the nitride-based semiconductor layers 104 and 106 may function as channel layers and barrier layers, respectively. A triangular well potential is generated at the joint interface between the channel layer and the barrier layer, causing electrons to accumulate in the triangular well potential, thereby generating a two-dimensional electron gas (2DEG) region adjacent to the heterojunction. Therefore, bidirectional switching devices can be used to contain one or more GaN-based high electron mobility transistors (HEMTs).

在一些實施例中，雙向切換器件11可進一步包含緩衝層、成核層或其組合(未顯示)。緩衝層可安置在基板102與氮化物基半導體層104之間。緩衝層可配置成減少基板102與氮化物基半導體層104之間的晶格和熱失配，由此固化歸因於失配/差異的缺陷。緩衝層可包含III-V族化合物。III-V化合物可包含 例如但不限於鋁、鎵、銦、氮或其組合。因此，緩衝層的示範性材料可進一步包含例如但不限於GaN、AlN、AlGaN、InAlGaN或其組合。 In some embodiments, the bidirectional switching device 11 may further include a buffer layer, a nucleation layer, or a combination thereof (not shown). A buffer layer may be disposed between the substrate 102 and the nitride-based semiconductor layer 104 . The buffer layer may be configured to reduce lattice and thermal mismatch between the substrate 102 and the nitride-based semiconductor layer 104, thereby curing defects due to the mismatch/disparity. The buffer layer may include a III-V compound. III-V compounds may contain For example, but not limited to aluminum, gallium, indium, nitrogen or combinations thereof. Accordingly, exemplary materials for the buffer layer may further include, for example, but not limited to, GaN, AIN, AlGaN, InAlGaN, or combinations thereof.

成核層可形成於基板102與緩衝層之間。成核層可配置成提供過渡以適應基板102與緩衝層的III-氮化物層之間的失配/差異。成核層的示範性材料可包含例如但不限於AlN或其合金中的任一種。 A nucleation layer may be formed between the substrate 102 and the buffer layer. The nucleation layer may be configured to provide a transition to accommodate the mismatch/difference between the substrate 102 and the III-nitride layer of the buffer layer. Exemplary materials for the nucleation layer may include, for example, but not limited to, any of AlN or alloys thereof.

閘極結構110安置在第二氮化物基半導體層上/之上/上方。閘極結構110中的每一個可包含任選的閘極半導體層112和閘極金屬層114。閘極半導體層112和閘極金屬層114堆疊在氮化物基半導體層106上。閘極半導體層112在氮化物基半導體層106與閘極金屬層114之間。閘極半導體層112和閘極金屬層144可形成肖特基勢壘(Schottky barrier)。在一些實施例中，雙向切換器件11可進一步包含p型摻雜的III-V化合物半導體層112與閘極金屬層114之間的任選的電介質層(未顯示)。 The gate structure 110 is disposed on/on/over the second nitride-based semiconductor layer. Each of gate structures 110 may include optional gate semiconductor layer 112 and gate metal layer 114 . The gate semiconductor layer 112 and the gate metal layer 114 are stacked on the nitride-based semiconductor layer 106 . The gate semiconductor layer 112 is between the nitride-based semiconductor layer 106 and the gate metal layer 114 . The gate semiconductor layer 112 and the gate metal layer 144 may form a Schottky barrier. In some embodiments, the bidirectional switching device 11 may further include an optional dielectric layer (not shown) between the p-type doped III-V compound semiconductor layer 112 and the gate metal layer 114 .

氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2可為增強型器件，所述增強型器件在其閘電極114在大約零偏置下時處於常關狀態。具體來說，閘極半導體層112可為p型摻雜III-V化合物半導體層。p型摻雜III-V化合物半導體層112可與氮化物基半導體層106產生至少一個p-n結以耗盡2DEG區，使得對應於對應閘極結構110下方的位置的2DEG區的至少一個區域具有與2DEG區的其餘部分不同的特性(例如，不同電子濃度)且因此受阻擋。歸因於這種機構，雙向切換器件11具有常關特性。換句話說，當無電壓施加到閘電極114或施加到閘電極114的電壓小於閾值電壓(即，在閘極結構110下方形成反型層所需的最小電壓)時，閘極結構110下方的2DEG區的區域保持受阻 擋，且因此無電流從其穿過。此外，通過提供p型摻雜III-V化合物半導體層112，閘極洩漏電流減小，且實現斷開狀態期間閾值電壓的增大。 The nitride-based double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 may be enhancement mode devices that are in normal state when their gate electrode 114 is at approximately zero bias. off state. Specifically, the gate semiconductor layer 112 may be a p-type doped III-V compound semiconductor layer. The p-type doped III-V compound semiconductor layer 112 may generate at least one pn junction with the nitride-based semiconductor layer 106 to deplete the 2DEG region, such that at least one region of the 2DEG region corresponding to a position under the corresponding gate structure 110 has a The remainder of the 2DEG region has different properties (eg, different electron concentration) and is therefore blocked. Due to this mechanism, the bidirectional switching device 11 has a normally-off characteristic. In other words, when no voltage is applied to the gate electrode 114 or the voltage applied to the gate electrode 114 is less than the threshold voltage (ie, the minimum voltage required to form an inversion layer under the gate structure 110 ), the The area of the 2DEG zone remains blocked, and therefore no current passes through it. Furthermore, by providing the p-type doped III-V compound semiconductor layer 112, the gate leakage current is reduced, and an increase in the threshold voltage during the off state is achieved.

在一些實施例中，p型摻雜III-V化合物半導體層112可省略，使得雙向切換器件11為耗盡型器件，這意味著電晶體在零閘極-源極電壓下處于常開狀態。 In some embodiments, the p-type doped III-V compound semiconductor layer 112 may be omitted so that the bidirectional switching device 11 is a depletion mode device, meaning that the transistor is in a normally-on state at zero gate-source voltage.

p型摻雜III-V化合物半導體層112的示範性材料可包含例如但不限於p摻雜III-V族氮化物半導體材料，例如p型GaN、p型AlGaN、p型InN、p型AlInN、p型InGaN、p型AlInGaN或其組合。在一些實施例中，通過使用例如Be、Mg、Zn、Cd和Hg的p型雜質來實現p摻雜材料。 Exemplary materials of the p-type doped III-V compound semiconductor layer 112 may include, but are not limited to, p-doped III-V nitride semiconductor materials, such as p-type GaN, p-type AlGaN, p-type InN, p-type AlInN, p-type InGaN, p-type AlInGaN or combinations thereof. In some embodiments, p-doped materials are achieved using p-type impurities such as Be, Mg, Zn, Cd, and Hg.

在一些實施例中，氮化物基半導體層104包含未摻雜GaN且氮化物基半導體層106包含AlGaN，且p型摻雜III-V化合物半導體層112為p型GaN層，所述p型GaN層可使底層能帶結構向上彎曲且耗盡2DEG區的對應區域，從而將雙向切換器件11置於斷開狀態條件中。 In some embodiments, the nitride-based semiconductor layer 104 includes undoped GaN and the nitride-based semiconductor layer 106 includes AlGaN, and the p-type doped III-V compound semiconductor layer 112 is a p-type GaN layer. The layer can cause the underlying band structure to bend upward and deplete the corresponding area of the 2DEG region, thereby placing the bidirectional switching device 11 in an off-state condition.

在一些實施例中，閘電極114可包含金屬或金屬化合物。閘電極114可形成為單個層，或具有相同或不同組成的多個層。金屬或金屬化合物的示範性材料可包含例如但不限於W、Au、Pd、Ti、Ta、Co、Ni、Pt、Mo、TiN、TaN、其金屬合金或化合物或其它金屬化合物。在一些實施例中，閘電極114的示範性材料可包含例如但不限於氮化物、氧化物、矽化物、摻雜半導體或其組合。 In some embodiments, gate electrode 114 may include a metal or metal compound. The gate electrode 114 may be formed as a single layer, or as multiple layers having the same or different compositions. Exemplary materials of metals or metal compounds may include, for example, but not limited to, W, Au, Pd, Ti, Ta, Co, Ni, Pt, Mo, TiN, TaN, metal alloys or compounds thereof, or other metal compounds. In some embodiments, exemplary materials for gate electrode 114 may include, for example, but not limited to, nitrides, oxides, silicides, doped semiconductors, or combinations thereof.

在一些實施例中，任選的電介質層可由單個層或更多層的電介質材料形成。示範性電介質材料可包含例如但不限於一個或多個氧化物層、SiOx層、SiNx層、高k電介質材料(例如，HfO2、Al2O3、TiO2、HfZrO、Ta2O3、HfSiO4、ZrO2、ZrSiO2等)或其組合。 In some embodiments, the optional dielectric layer may be formed from a single layer or more layers of dielectric material. Exemplary dielectric materials may include, for example, but not limited to, one or more oxide layers, SiOx layers , SiNx layers , high-k dielectric materials (e.g., HfO2 , Al2O3 , TiO2 , HfZrO, Ta2O3 , HfSiO 4 , ZrO 2 , ZrSiO 2 , etc.) or combinations thereof.

S/D電極116安置在氮化物基半導體層106上。“S/D”電極意味著S/D電極116中的每一個可取決於器件設計而充當源電極或汲電極。S/D電極116可位於對應閘極結構110的兩個相對側處，但可使用其它配置，尤其當在器件中採用多個源電極、汲電極或閘電極時。閘極結構110中的每一個可佈置成使得閘極結構110中的每一個位於S/D電極116中的至少兩個之間。閘極結構110和S/D電極116可共同充當具有2DEG區的至少一個氮化物基/GaN基HEMT。 The S/D electrode 116 is disposed on the nitride-based semiconductor layer 106 . "S/D" electrodes means that each of the S/D electrodes 116 may function as a source or drain electrode depending on the device design. S/D electrodes 116 may be located on opposite sides of corresponding gate structure 110, but other configurations may be used, especially when multiple source, drain, or gate electrodes are employed in the device. Each of the gate structures 110 may be arranged such that each of the gate structures 110 is located between at least two of the S/D electrodes 116 . Gate structure 110 and S/D electrode 116 may together function as at least one nitride-based/GaN-based HEMT having a 2DEG region.

在示範性圖示中，鄰近S/D電極116關於其間的閘極結構110對稱。在一些實施例中，鄰近S/D電極116可任選地關於其間的閘極結構110不對稱。也就是說，S/D電極116中的一個可比S/D電極116中的另一個更接近閘極結構110。 In the exemplary illustration, adjacent S/D electrodes 116 are symmetrical about the gate structure 110 therebetween. In some embodiments, adjacent S/D electrodes 116 may optionally be asymmetric with respect to the gate structure 110 therebetween. That is, one of the S/D electrodes 116 may be closer to the gate structure 110 than another of the S/D electrodes 116 .

在一些實施例中，S/D電極116可包含例如但不限於金屬、合金、摻雜半導體材料(例如摻雜結晶矽)、例如矽化物和氮化物的化合物、其它導體材料或其組合。S/D電極116的示範性材料可包含例如但不限於Ti、AlSi、TiN或其組合。S/D電極116可為單個層，或具有相同或不同組成的多個層。在一些實施例中，S/D電極116可與氮化物基半導體層106形成歐姆接觸。歐姆接觸可通過將Ti、Al或其它合適的材料應用於S/D電極116來實現。在一些實施例中，S/D電極116中的每一個由至少一個保形層和導電填充物形成。保形層可包覆導電填充物。保形層的示範性材料例如但不限於Ti、Ta、TiN、Al、Au、AlSi、Ni、Pt或其組合。導電填充物的示範性材料可包含例如但不限於AlSi、AlCu或其組合。 In some embodiments, S/D electrode 116 may include, for example, but not limited to, metals, alloys, doped semiconductor materials (eg, doped crystalline silicon), compounds such as silicides and nitrides, other conductor materials, or combinations thereof. Exemplary materials for S/D electrode 116 may include, for example, but not limited to, Ti, AlSi, TiN, or combinations thereof. S/D electrode 116 may be a single layer, or multiple layers of the same or different compositions. In some embodiments, S/D electrode 116 may form an ohmic contact with nitride-based semiconductor layer 106 . Ohmic contact may be achieved by applying Ti, Al, or other suitable materials to S/D electrode 116 . In some embodiments, each of the S/D electrodes 116 is formed from at least one conformal layer and a conductive filler. The conformal layer may coat the conductive filler. Exemplary materials for the conformal layer include, but are not limited to, Ti, Ta, TiN, Al, Au, AlSi, Ni, Pt, or combinations thereof. Exemplary materials for conductive fillers may include, but are not limited to, AlSi, AlCu, or combinations thereof.

鈍化層124安置在氮化物基半導體層106之上。鈍化層124可出於保護目的或為增強器件的電學性質(例如，通過提供不同層/元件之間/當中的電隔離效應)而形成。鈍化層124覆蓋氮化物基半導體層106的頂部表面。鈍化層124可覆蓋閘極結構110。鈍化層124可至少覆蓋閘極結構110的相對的兩個側壁。S/D 電極116可穿透/穿過鈍化層124以接觸氮化物基半導體層106。鈍化層124的示範性材料可包含例如但不限於SiNx、SiOx、Si3N4、SiON、SiC、SiBN、SiCBN、氧化物、氮化物、聚(2-乙基-2-惡唑啉)(PEOX)或其組合。在一些實施例中，鈍化層124可為多層結構，例如Al2O3/SiN、Al2O3/SiO2、AlN/SiN、AlN/SiO2或其組合的複合電介質層。 Passivation layer 124 is disposed over nitride-based semiconductor layer 106 . Passivation layer 124 may be formed for protection purposes or to enhance the electrical properties of the device (eg, by providing an electrical isolation effect between/among different layers/components). Passivation layer 124 covers the top surface of nitride-based semiconductor layer 106 . Passivation layer 124 may cover gate structure 110 . The passivation layer 124 may cover at least two opposite sidewalls of the gate structure 110 . The S/D electrode 116 may penetrate/pass through the passivation layer 124 to contact the nitride-based semiconductor layer 106 . Exemplary materials for passivation layer 124 may include, for example, but not limited to, SiNx , SiOx , Si3N4 , SiON, SiC, SiBN, SiCBN, oxides, nitrides, poly(2-ethyl-2-oxazoline )(PEOX) or combinations thereof. In some embodiments, the passivation layer 124 may be a multi-layer structure, such as a composite dielectric layer of Al 2 O 3 /SiN, Al 2 O 3 /SiO 2 , AlN/SiN, AlN/SiO 2 or combinations thereof.

鈍化層126安置在鈍化層124和S/D電極116上方。鈍化層126覆蓋鈍化層124和S/D電極116。鈍化層126可充當平坦化層，所述平坦化層具有用以支撐其它層/元件的水準頂部表面。鈍化層126的示範性材料可包含例如但不限於SiNx、SiOx、Si3N4、SiON、SiC、SiBN、SiCBN、氧化物、PEOX或其組合。在一些實施例中，鈍化層126為多層結構，例如Al2O3/SiN、Al2O3/SiO2、AlN/SiN、AlN/SiO2或其組合的複合電介質層。 Passivation layer 126 is disposed over passivation layer 124 and S/D electrode 116 . Passivation layer 126 covers passivation layer 124 and S/D electrode 116 . Passivation layer 126 may act as a planarization layer with a horizontal top surface to support other layers/components. Exemplary materials for passivation layer 126 may include, for example , but not limited to, SiNx , SiOx , Si3N4 , SiON, SiC, SiBN, SiCBN, oxides, PEOX, or combinations thereof. In some embodiments, the passivation layer 126 is a multi-layer structure, such as a composite dielectric layer of Al 2 O 3 /SiN, Al 2 O 3 /SiO 2 , AlN/SiN, AlN/SiO 2 or combinations thereof.

導電通孔132安置在鈍化層126和鈍化層124內。導電通孔132穿透鈍化層126和鈍化層124。導電通孔132縱向延伸以分別與閘極結構110和S/D電極116電耦合。導電通孔132的上表面不受鈍化層126覆蓋。導電通孔132的示範性材料可包含例如但不限於導電材料，例如金屬或合金。 Conductive vias 132 are disposed within passivation layers 126 and 124 . Conductive vias 132 penetrate passivation layer 126 and passivation layer 124 . Conductive vias 132 extend longitudinally to electrically couple with gate structure 110 and S/D electrode 116, respectively. The upper surface of the conductive via 132 is not covered by the passivation layer 126 . Exemplary materials for conductive vias 132 may include, for example, but not limited to, conductive materials such as metals or alloys.

導電跡線142安置在鈍化層126和導電通孔132上。導電跡線142與導電通孔132接觸。導電跡線142可通過使安置在鈍化層126和導電通孔132上的導電層圖案化而形成。導電跡線142的示範性材料可包含例如但不限於導電材料。導電跡線142可包含具有Ag、Al、Cu、Mo、Ni、其合金、其氧化物、其氮化物或其組合的單個膜或多層膜。 Conductive traces 142 are disposed on passivation layer 126 and conductive vias 132 . Conductive trace 142 contacts conductive via 132 . Conductive traces 142 may be formed by patterning a conductive layer disposed over passivation layer 126 and conductive vias 132 . Exemplary materials for conductive traces 142 may include, for example, but not limited to, conductive materials. Conductive traces 142 may include a single film or multiple films having Ag, Al, Cu, Mo, Ni, alloys thereof, oxides thereof, nitrides thereof, or combinations thereof.

鈍化層128安置在鈍化層126和導電跡線142上方。鈍化層128覆蓋鈍化層126和導電跡線142。鈍化層128可充當平坦化層，所述平坦化層具有用以 支撐其它層/元件的水準頂部表面。鈍化層128的示範性材料可包含例如但不限於SiNx、SiOx、Si3N4、SiON、SiC、SiBN、SiCBN、氧化物、PEOX或其組合。在一些實施例中，鈍化層128為多層結構，例如Al2O3/SiN、Al2O3/SiO2、AlN/SiN、AlN/SiO2或其組合的複合電介質層。 Passivation layer 128 is disposed over passivation layer 126 and conductive traces 142 . Passivation layer 128 covers passivation layer 126 and conductive traces 142 . Passivation layer 128 may act as a planarization layer with a horizontal top surface to support other layers/components. Exemplary materials for passivation layer 128 may include, for example , but not limited to, SiNx , SiOx , Si3N4 , SiON, SiC, SiBN, SiCBN, oxides, PEOX, or combinations thereof. In some embodiments, the passivation layer 128 is a multi-layer structure, such as a composite dielectric layer of Al 2 O 3 /SiN, Al 2 O 3 /SiO 2 , AlN/SiN, AlN/SiO 2 or combinations thereof.

導電通孔136安置在鈍化層128內。導電通孔136穿透鈍化層128。導電通孔136縱向延伸以與導電跡線142電耦合。導電通孔136的上表面不受鈍化層136覆蓋。導電通孔136的示範性材料可包含例如但不限於導電材料，例如金屬或合金。 Conductive vias 136 are disposed within passivation layer 128 . Conductive vias 136 penetrate passivation layer 128 . Conductive vias 136 extend longitudinally to electrically couple with conductive traces 142 . The upper surface of the conductive via 136 is not covered by the passivation layer 136 . Exemplary materials for conductive vias 136 may include, for example, but not limited to, conductive materials such as metals or alloys.

導電跡線146安置在鈍化層128和導電通孔136上。導電跡線146與導電通孔136接觸。導電跡線146可通過使安置在鈍化層128和導電通孔136上的導電層圖案化而形成。導電層146的示範性材料可包含例如但不限於導電材料。導電層146可包含具有Ag、Al、Cu、Mo、Ni、其合金、其氧化物、其氮化物或其組合的單個膜或多層膜。 Conductive traces 146 are disposed on passivation layer 128 and conductive vias 136 . Conductive trace 146 contacts conductive via 136 . Conductive traces 146 may be formed by patterning a conductive layer disposed over passivation layer 128 and conductive vias 136 . Exemplary materials for conductive layer 146 may include, for example, but not limited to, conductive materials. The conductive layer 146 may include a single film or a multi-layer film having Ag, Al, Cu, Mo, Ni, alloys thereof, oxides thereof, nitrides thereof, or combinations thereof.

TGV 162形成為從第二導電層146縱向延伸且穿透到基板102中。TGV 162的上表面不受第三鈍化層128覆蓋。在一些實施例中，TGV 162可形成為從第一導電層142縱向延伸且穿透到基板102中。TGV 162的上表面不受第二鈍化層126覆蓋。TGV 162的示範性材料可包含例如但不限於導電材料，例如金屬或合金。 TGV 162 is formed to extend longitudinally from second conductive layer 146 and penetrate into substrate 102 . The upper surface of TGV 162 is not covered by third passivation layer 128 . In some embodiments, TGV 162 may be formed to extend longitudinally from first conductive layer 142 and penetrate into substrate 102 . The upper surface of TGV 162 is not covered by second passivation layer 126 . Exemplary materials for TGV 162 may include, for example, but not limited to, conductive materials such as metals or alloys.

保護層154安置在鈍化層128和導電層146上方。保護層154覆蓋鈍化層128和導電層146。保護層154可防止導電層146氧化。導電層146的一些部分可通過保護層154中的開口暴露以形成導電墊170，所述導電墊170配置成電連接到外部元件(例如，外部電路)。 Protective layer 154 is disposed over passivation layer 128 and conductive layer 146 . Protective layer 154 covers passivation layer 128 and conductive layer 146 . The protective layer 154 can prevent the conductive layer 146 from oxidation. Portions of conductive layer 146 may be exposed through openings in protective layer 154 to form conductive pads 170 configured to electrically connect to external components (eg, external circuitry).

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；第二電力/負載墊P/L2，其配置成充當第二電力/負載節點；和參考墊REF，其配置成充當參考節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; second power/load pad P/L2 configured to act as a second power/load node; and a reference pad REF configured to act as a reference node.

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm , first substrate coupling transistor Q1, and second substrate coupling transistor Q1. Crystal Q2.

參考圖5A。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。 Refer to Figure 5A. The S/D electrode 116 may include at least one first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . A source/drain terminal and the drain terminal of the first substrate coupling transistor Q1.

第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和第一基板耦合電晶體Q1共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the first substrate coupling transistor Q1 so that the chip size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the first source/drain terminal of the nitride-based two-sided transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

參考圖5B。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 5B. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm . The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到控制墊且配置成充當第一基板耦合電晶體Q1的閘極端 子。第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Gate structure 110 may further include at least one second gate structure 110b electrically connected to the control pad and configured to serve as a gate terminal of first substrate coupling transistor Q1 son. The second gate structure 110b may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第三閘極結構110c，所述第三閘極結構110c電連接到控制墊且配置成充當第二基板耦合電晶體Q2的閘極端子。第三閘極結構110c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Gate structure 110 may further include at least one third gate structure 110c electrically connected to the control pad and configured to serve as a gate terminal for second substrate coupling transistor Q2. The third gate structure 110c may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖5C。S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子和第二基板耦合電晶體Q2的汲極端子。第二S/D電極116b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 Refer to Figure 5C. The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . The two source/drain terminals and the drain terminal of the second substrate coupling transistor Q2. The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和第二基板耦合電晶體Q2共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第二源極/汲極端子和第二基板耦合電晶體Q2的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the second substrate coupling transistor Q2, so that the chip size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the second source/drain terminal of the nitride-based double-sided transistor Qm and the drain terminal of the second substrate coupling transistor Q2.

參考圖5D。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102和參考墊且配置成充當第一基板耦合電晶體Q1的源極端子。第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。第三S/D電極116c可進一步通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146電連接到參考墊。 Refer to Figure 5D. The S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to the substrate 102 and the reference pad and configured to serve as the source terminal of the first substrate coupling transistor Q1. The third S/D electrode 116c may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The third S/D electrode 116c may be further electrically connected to the reference pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖5D。S/D電極116可包含至少一個第四S/D電極116d，所述第四S/D電極116d電連接到基板和參考墊且配置成充當第二基板耦合電晶體Q2的源極端子。第四S/D電極116d可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。第四S/D電極116d可進一步通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146電連接到參考墊。 Refer to Figure 5D. The S/D electrode 116 may include at least one fourth S/D electrode 116d electrically connected to the substrate and the reference pad and configured to serve as the source terminal of the second substrate coupling transistor Q2. The fourth S/D electrode 116d may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The fourth S/D electrode 116d may further be electrically connected to the reference pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三S/D電極116c鄰近於第一S/D電極116a；且第二閘極結構110b在第一S/D電極116a與第三S/D電極116c之間。 Preferably, the third S/D electrode 116c is adjacent to the first S/D electrode 116a; and the second gate structure 110b is between the first S/D electrode 116a and the third S/D electrode 116c.

優選地，第四S/D電極116d鄰近於第二S/D電極116b；且第三閘極結構110c在第二S/D電極116b與第四S/D電極116d之間。 Preferably, the fourth S/D electrode 116d is adjacent to the second S/D electrode 116b; and the third gate structure 110c is between the second S/D electrode 116b and the fourth S/D electrode 116d.

在圖6A至6K中展示且在下文描述用於製造雙向切換器件11的方法的不同階段。在下文中，沉積技術可包含例如但不限於原子層沉積(ALD)、物理氣相沉積(PVD)、化學氣相沉積(CVD)、金屬有機CVD(MOCVD)、等離子體增強型CVD(PECVD)、低壓CVD(LPCVD)、等離子體輔助氣相沉積、外延生長或其它合適的工藝。用於形成充當平坦化層的鈍化層的工藝通常包含化學機械拋光(CMP)工藝。用於形成導電通孔的工藝通常包含在鈍化層中形成通孔且用導電材料填充通孔。用於形成導電跡線的工藝通常包含光刻、曝光和顯影、蝕刻、其它合適的工藝或其組合。 The different stages of the method for manufacturing the bidirectional switching device 11 are shown in FIGS. 6A to 6K and described below. Hereinafter, deposition techniques may include, for example, but not limited to, atomic layer deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), metal organic CVD (MOCVD), plasma enhanced CVD (PECVD), Low pressure CVD (LPCVD), plasma assisted vapor deposition, epitaxial growth or other suitable processes. The process for forming a passivation layer that serves as a planarization layer typically includes a chemical mechanical polishing (CMP) process. The process for forming a conductive via typically involves forming the via in a passivation layer and filling the via with a conductive material. Processes used to form conductive traces typically include photolithography, exposure and development, etching, other suitable processes, or combinations thereof.

參考圖6A，設置基板102。氮化物基半導體層104和106可通過使用上述沉積技術依序形成於基板102之上。鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面形成2DEG區。 Referring to Figure 6A, a substrate 102 is provided. Nitride-based semiconductor layers 104 and 106 may be sequentially formed on the substrate 102 using the above-described deposition techniques. A 2DEG region is formed adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 .

參考圖6B，可通過使用上述沉積技術依序在氮化物基半導體層106上方形成毯覆式p型摻雜III-V化合物半導體層111和毯覆式閘電極層113。 Referring to FIG. 6B , a blanket p-type doped III-V compound semiconductor layer 111 and a blanket gate electrode layer 113 can be formed sequentially over the nitride-based semiconductor layer 106 by using the above-described deposition technology.

參考圖6C，使毯覆式p型摻雜III-V化合物半導體層111和毯覆式閘電極層113圖案化以在氮化物基半導體層106之上形成多個閘極結構110。閘極結構110中的每一個包含p型摻雜III-V化合物半導體層112和閘極金屬層114。鈍化層124可接著通過使用上述沉積技術形成為覆蓋閘極結構110。 Referring to FIG. 6C , the blanket p-type doped III-V compound semiconductor layer 111 and the blanket gate electrode layer 113 are patterned to form a plurality of gate structures 110 on the nitride-based semiconductor layer 106 . Each of the gate structures 110 includes a p-type doped III-V compound semiconductor layer 112 and a gate metal layer 114 . A passivation layer 124 may then be formed overlying the gate structure 110 using the deposition techniques described above.

參考圖6D，通過去除鈍化層124的一些部分而形成一些S/D區160。氮化物基半導體層106的至少一個部分從S/D區160暴露。毯覆式導電層115形成為覆蓋氮化物基半導體層106和鈍化層124且填充S/D區160，由此與氮化物基半導體層106接觸。 Referring to FIG. 6D , some S/D regions 160 are formed by removing portions of the passivation layer 124 . At least a portion of the nitride-based semiconductor layer 106 is exposed from the S/D region 160 . The blanket conductive layer 115 is formed to cover the nitride-based semiconductor layer 106 and the passivation layer 124 and fill the S/D region 160 , thereby contacting the nitride-based semiconductor layer 106 .

參考圖6E，通過使毯覆式導電層115圖案化而形成S/D電極116。去除毯覆式導電層115的一些部分，且保留S/D區160內的毯覆式導電層115的其餘部分以充當S/D電極116。鈍化層126可接著通過使用上述沉積技術形成於鈍化層124上以覆蓋S/D電極116。 Referring to FIG. 6E , the S/D electrode 116 is formed by patterning the blanket conductive layer 115 . Some portions of blanket conductive layer 115 are removed, and remaining portions of blanket conductive layer 115 within S/D region 160 remain to serve as S/D electrodes 116 . Passivation layer 126 may then be formed on passivation layer 124 to cover S/D electrode 116 using the deposition techniques described above.

參考圖6F，導電通孔132形成為穿透鈍化層126和124。通過使用上述沉積技術將毯覆式導電層141沉積在鈍化層126上。 Referring to FIG. 6F , conductive vias 132 are formed through passivation layers 126 and 124 . Blanket conductive layer 141 is deposited on passivation layer 126 using the deposition techniques described above.

參考圖6G，使毯覆式導電層141圖案化以形成導電跡線142，所述導電跡線142在鈍化層126之上且與導電通孔132電耦合。鈍化層128可接著通過使用上述沉積技術形成於鈍化層126上以覆蓋導電跡線142。 Referring to FIG. 6G , blanket conductive layer 141 is patterned to form conductive traces 142 over passivation layer 126 and electrically coupled to conductive vias 132 . Passivation layer 128 may then be formed on passivation layer 126 to cover conductive traces 142 using the deposition techniques described above.

參考圖6H，導電通孔136形成於鈍化層128中。通過使用上述沉積技術將毯覆式導電層145沉積在鈍化層128上。 Referring to FIG. 6H , conductive vias 136 are formed in passivation layer 128 . Blanket conductive layer 145 is deposited on passivation layer 128 using the deposition techniques described above.

參考圖6I，多個TGV 162也可形成為從鈍化層128延伸且在沉積毯覆式導電層145之前穿透到基板中。 Referring to FIG. 6I , a plurality of TGVs 162 may also be formed extending from the passivation layer 128 and penetrating into the substrate prior to depositing the blanket conductive layer 145 .

參考圖6J，使毯覆式導電層145圖案化以形成導電跡線146，所述導電跡線146在鈍化層128之上且與導電通孔136電耦合。保護層154可接著通過使用上述沉積技術形成於鈍化層128上以覆蓋導電跡線146。 Referring to FIG. 6J , blanket conductive layer 145 is patterned to form conductive traces 146 over passivation layer 128 and electrically coupled to conductive vias 136 . A protective layer 154 may then be formed on the passivation layer 128 to cover the conductive traces 146 using the deposition techniques described above.

參考圖6K。保護層154可接著圖案化以形成一個或多個開口以暴露一個或多個導電墊170。 See Figure 6K. Protective layer 154 may then be patterned to form one or more openings to expose one or more conductive pads 170 .

返回參考圖4，導電墊170可包括控制墊CTRL、第一電力/負載墊P/L1、第二電力/負載墊P/L2和參考墊REF。 Referring back to FIG. 4 , the conductive pads 170 may include a control pad CTRL, a first power/load pad P/L1 , a second power/load pad P/L2 , and a reference pad REF.

返回參考圖5A至5D，氮化物基雙側電晶體Qm可通過以下操作構造：將至少一個第一S/D電極電連接到第一電力/負載墊以形成氮化物基雙側電晶體Qm的第一S/D端子；將至少一個第二S/D電極電連接到第二電力/負載墊以形成氮化物基雙側電晶體Qm的第二S/D端子；和將至少一個第一閘極結構電連接到控制墊以形成氮化物基雙側電晶體Qm的主閘極端子。 Referring back to FIGS. 5A to 5D , the nitride-based double-sided transistor Q m may be constructed by electrically connecting at least one first S/D electrode to the first power/load pad to form the nitride-based double-sided transistor Q a first S/D terminal of m ; electrically connecting at least one second S/D electrode to the second power/load pad to form a second S/D terminal of the nitride-based double-sided transistor Q m ; and connecting at least one The first gate structure is electrically connected to the control pad to form the main gate terminal of the nitride-based double-sided transistor Qm .

第一基板耦合電晶體Q1可通過以下操作構造：使用第一S/D電極作為第一基板耦合電晶體Q1的汲極端子；將至少一個第三S/D電極電連接到基板以形成第一基板耦合電晶體Q1的源極端子；和將至少一個第二閘極結構電連接到控制墊以形成第一基板耦合電晶體Q1的閘極端子。 The first substrate coupling transistor Q1 may be constructed by using the first S/D electrode as a drain terminal of the first substrate coupling transistor Q1; and electrically connecting at least one third S/D electrode to the substrate to form the first a source terminal of substrate coupling transistor Q1; and electrically connecting at least one second gate structure to the control pad to form a gate terminal of first substrate coupling transistor Q1.

第二基板耦合電晶體Q2可通過以下操作構造：使用第二S/D電極作為第二基板耦合電晶體Q2的汲極端子；將至少一個第四S/D電極電連接到基板 以形成第二基板耦合電晶體Q2的源極端子；和將至少一個第三閘極結構電連接到控制墊以形成第二基板耦合電晶體Q2的閘極端子。 The second substrate coupling transistor Q2 may be constructed by: using the second S/D electrode as a drain terminal of the second substrate coupling transistor Q2; and electrically connecting at least one fourth S/D electrode to the substrate to form a source terminal of the second substrate coupling transistor Q2; and electrically connecting at least one third gate structure to the control pad to form a gate terminal of the second substrate coupling transistor Q2.

圖7為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件2的電路框圖。雙向切換器件2類似於雙向切換器件1。出於簡潔性，圖1和圖7中的相同元件給出相同參考標號和符號，且將不進一步詳細描述。 Figure 7 is a circuit block diagram of a bidirectional switching device 2 with substrate potential management capabilities according to some embodiments of the present invention. Bidirectional switching device 2 is similar to bidirectional switching device 1 . For simplicity, identical elements in Figures 1 and 7 are given the same reference numbers and symbols and will not be described in further detail.

如圖7中所示，圖7的雙向切換器件2不同於圖1的雙向切換器件1，因為所述雙向切換器件2的基板電位管理電路進一步包括第三電位穩定元件F3，所述第三電位穩定元件F3具有連接到主基板的第一傳導端子和連接到參考節點的第二傳導端子。 As shown in FIG. 7 , the bidirectional switching device 2 of FIG. 7 is different from the bidirectional switching device 1 of FIG. 1 because the substrate potential management circuit of the bidirectional switching device 2 further includes a third potential stabilizing element F3. The stabilizing element F3 has a first conductive terminal connected to the main substrate and a second conductive terminal connected to the reference node.

當將高電平電壓施加到控制節點時，第一電位穩定元件F1可具有低於第三電位穩定元件F3的第三電阻的第一電阻，且第二電位穩定元件F2可具有低於第三電阻的第二電阻，使得主基板的電位基本上等於第一和第二電力/負載節點的電位中的較低一個。 When a high-level voltage is applied to the control node, the first potential stabilizing element F1 may have a first resistance lower than the third resistance of the third potential stabilizing element F3, and the second potential stabilizing element F2 may have a lower resistance than the third resistance. The second resistance of the resistor is such that the potential of the main substrate is substantially equal to the lower of the potentials of the first and second power/load nodes.

當將低電平電壓施加到控制節點時，第一電阻可高於第三電阻，且第二電阻可高於第三電阻，使得主基板的電位基本上等於接地電位。 When a low-level voltage is applied to the control node, the first resistance may be higher than the third resistance, and the second resistance may be higher than the third resistance, so that the potential of the main substrate is substantially equal to the ground potential.

圖8為基於圖7的電路框圖的根據一些實施例的雙向切換器件21的電路圖。雙向切換器件21類似於圖2的雙向切換器件11。出於簡潔性，圖2和圖8中的相同元件給出相同參考標號和符號，且將不進一步詳細描述。 FIG. 8 is a circuit diagram of the bidirectional switching device 21 according to some embodiments based on the circuit block diagram of FIG. 7 . The bidirectional switching device 21 is similar to the bidirectional switching device 11 of FIG. 2 . For simplicity, identical elements in Figures 2 and 8 are given the same reference numbers and symbols and will not be described in further detail.

如圖8中所示。圖8的雙向切換器件21不同於圖2的雙向切換器件11，因為所述雙向切換器件21的第三電位穩定元件F3可為電阻器R1，所述電阻器R1具有連接到主基板的第一端子和通過參考節點連接到接地的第二端子。 As shown in Figure 8. The bidirectional switching device 21 of FIG. 8 is different from the bidirectional switching device 11 of FIG. 2 because the third potential stabilizing element F3 of the bidirectional switching device 21 may be a resistor R1 having a first resistor connected to the main substrate. terminal and a second terminal connected to ground through the reference node.

雙向切換器件21的操作機構與雙向切換器件11的操作機構相同，因此可參考圖3A至3D。出於簡潔性和簡單性，將不進一步詳細描述雙向切換器件21的操作機構。 The operating mechanism of the bidirectional switching device 21 is the same as that of the bidirectional switching device 11 , so please refer to FIGS. 3A to 3D . For reasons of brevity and simplicity, the operating mechanism of the bidirectional switching device 21 will not be described in further detail.

氮化物基雙側電晶體Qm可與第一電位穩定元件F1、第二電位穩定元件F2和第三電位穩定元件F3集成以形成積體電路(IC)晶片。因此，圖8的雙向切換器件21可通過在IC晶片中集成氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1、第二基板耦合電晶體Q2和電阻器R1來形成。 The nitride-based double-sided transistor Qm may be integrated with the first potential stabilizing element F1, the second potential stabilizing element F2, and the third potential stabilizing element F3 to form an integrated circuit (IC) chip. Therefore, the bidirectional switching device 21 of FIG. 8 can be formed by integrating the nitride-based double-sided transistor Q m , the first substrate coupling transistor Q1 , the second substrate coupling transistor Q2 and the resistor R1 in an IC wafer.

圖9和圖10A至10B顯示基於圖8的電路圖的根據實施例的雙向切換器件21a的結構。圖9為展示可構成雙向切換器件21a中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件21a的部分佈局。沿圖9中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖4中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖5A至5C。沿圖9中的線D-D'和E-E'截取的橫截面視圖分別在圖10A和10B中顯示。出於簡潔性，圖4、5A至5D和圖9、10A至10B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 9 and 10A to 10B show the structure of the bidirectional switching device 21a according to the embodiment based on the circuit diagram of FIG. 8 . Figure 9 is a partial layout of the bidirectional switching device 21a showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 21a. Cross-sectional views taken along lines AA', BB', CC' in Figure 9 versus cross-sections taken along lines AA', BB' and CC' in Figure 4 The views are the same, so reference is made to Figures 5A to 5C. Cross-sectional views taken along lines DD' and EE' in Figure 9 are shown in Figures 10A and 10B, respectively. For simplicity, identical structural elements in Figures 4, 5A to 5D and Figures 9, 10A to 10B are given the same reference numerals and symbols and will not be described in further detail.

參考圖9和圖10A至10B。雙向切換器件21a類似於雙向切換器件11，不同之處在於雙向切換器件21a進一步包括電阻性元件180a。電阻性元件180a包括：第一端181a，其電連接到基板102以充當電阻器R1的第一端子；和第二端182a，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 9 and Figures 10A-10B. The bidirectional switching device 21a is similar to the bidirectional switching device 11, except that the bidirectional switching device 21a further includes a resistive element 180a. Resistive element 180a includes a first terminal 181a electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182a electrically connected to a reference pad to serve as a second terminal of resistor R1.

電阻性元件180a可安置在鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區的同一層處。第一端181a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個 TGV 162電耦合到基板102。第二端182a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 The resistive element 180a may be disposed at the same layer of the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a may pass through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 is electrically coupled to substrate 102 . The second end 182a may be electrically connected through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146 to the reference pad.

雙向切換器件21a的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6A和圖6B中所顯示的階段之間，鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區通過離子注入圖案化以形成電阻性元件180a。 The method of manufacturing the bidirectional switching device 21a may include the stages shown in FIGS. 6A to 6K, except that between the stages shown in FIGS. 6A and 6B, adjacent to the first nitride-based semiconductor layer 104 and the The 2DEG region of the heterojunction interface between the dinitride-based semiconductor layers 106 is patterned by ion implantation to form the resistive element 180a.

圖11和圖12A至12B顯示基於圖8的電路圖的根據另一實施例的雙向切換器件21b的結構。圖11為展示可構成雙向切換器件21b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件21b的部分佈局。沿圖11中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖4中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖5A至5C。沿圖11中的線D-D'和E-E'截取的橫截面視圖分別在圖12A和12B中顯示。出於簡潔性，圖4、5A至5D和圖11、12A至12B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 11 and 12A to 12B show the structure of the bidirectional switching device 21b according to another embodiment based on the circuit diagram of FIG. 8 . Figure 11 is a partial layout of a bidirectional switching device 21b showing the relationship among some elements that may constitute part of a transistor and a resistor in the bidirectional switching device 21b. Cross-sectional views taken along lines AA', BB', CC' in Figure 11 and cross-sections taken along lines AA', BB' and CC' in Figure 4 The views are the same, so reference is made to Figures 5A to 5C. Cross-sectional views taken along lines DD' and EE' in Figure 11 are shown in Figures 12A and 12B, respectively. For simplicity, identical structural elements in Figures 4, 5A to 5D and Figures 11, 12A to 12B are given the same reference numerals and symbols and will not be described in further detail.

參考圖11和圖12A至12B。雙向切換器件21b類似於雙向切換器件11，不同之處在於雙向切換器件21b進一步包括電阻性元件180b。電阻性元件包括：第一端181b，其電連接到基板102以充當電阻器R1的第一端子；和第二端182b，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 11 and Figures 12A-12B. The bidirectional switching device 21b is similar to the bidirectional switching device 11, except that the bidirectional switching device 21b further includes a resistive element 180b. The resistive element includes a first terminal 181b electrically connected to the substrate 102 to serve as a first terminal of the resistor R1 and a second terminal 182b electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180b可安置在第二氮化物基半導體層106上且由與閘極結構110相同的材料製成。第一端181b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182b可通過至少一個第一導電通 孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 The resistive element 180b may be disposed on the second nitride-based semiconductor layer 106 and be made of the same material as the gate structure 110 . The first end 181b may be electrically coupled to the substrate through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102. The second terminal 182b can pass through at least one first conductive path Hole 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146 are electrically connected to the reference pad.

雙向切換器件21b的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6C中所顯示的階段處，毯覆式半導體層111和毯覆式閘電極層113圖案化以同時形成閘極結構110和電阻性元件180b。 The manufacturing method of the bidirectional switching device 21 b may include the stages shown in FIGS. 6A to 6K , except that at the stage shown in FIG. 6C , the blanket semiconductor layer 111 and the blanket gate electrode layer 113 are patterned. The gate structure 110 and the resistive element 180b are formed simultaneously.

圖13和圖14A至14B顯示基於圖8的電路圖的根據實施例的雙向切換器件21c的結構。圖13為展示可構成雙向切換器件21c中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件21c的部分佈局。沿圖13中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖4中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖5A至5C。沿圖13中的線D-D'和E-E'截取的橫截面視圖分別在圖14A和14B中顯示。出於簡潔性，圖4、5A至5D和圖13、14A至14B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 13 and 14A to 14B show the structure of the bidirectional switching device 21c according to the embodiment based on the circuit diagram of FIG. 8 . Figure 13 is a partial layout of the bidirectional switching device 21c showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 21c. Cross-sectional views taken along lines AA', BB', CC' in Figure 13 and cross-sections taken along lines AA', BB' and CC' in Figure 4 The views are the same, so reference is made to Figures 5A to 5C. Cross-sectional views taken along lines DD' and EE' in Figure 13 are shown in Figures 14A and 14B, respectively. For simplicity, identical structural elements in Figures 4, 5A to 5D and Figures 13, 14A to 14B are given the same reference numerals and symbols and will not be described in further detail.

參考圖13和圖14A至14B。雙向切換器件21c類似於雙向切換器件11，不同之處在於雙向切換器件21c進一步包括電阻性元件180c。電阻性元件包括：第一端181c，其電連接到基板102以充當電阻器R1的第一端子；和第二端182c，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 13 and Figures 14A-14B. The bidirectional switching device 21c is similar to the bidirectional switching device 11, except that the bidirectional switching device 21c further includes a resistive element 180c. The resistive element includes a first terminal 181c electrically connected to the substrate 102 to serve as a first terminal of the resistor R1 and a second terminal 182c electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180c可安置在第一鈍化層124上且由與S/D電極116相同的材料製成。第一端181c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 Resistive element 180c may be disposed on first passivation layer 124 and be made of the same material as S/D electrode 116 . The first end 181c may be electrically coupled to the substrate through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102. The second end 182c may be electrically connected to the reference pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件21c的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6E中所顯示的階段處，毯覆式導電層115圖案化以同時形成S/D電極116和電阻性元件180c。 The fabrication method of the bidirectional switching device 21c may include the stages shown in FIGS. 6A to 6K , except that at the stage shown in FIG. 6E , the blanket conductive layer 115 is patterned to simultaneously form the S/D electrode 116 and resistive element 180c.

圖15和圖16A至16B顯示基於圖8的電路圖的根據實施例的雙向切換器件21d的結構。圖15為展示可構成雙向切換器件21d中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件21d的部分佈局。沿圖15中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖4中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖5A至5C。沿圖15中的線D-D'和E-E'截取的橫截面視圖分別在圖16A和16B中顯示。出於簡潔性，圖4、5A至5D和圖15、16A至16B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 15 and 16A to 16B show the structure of the bidirectional switching device 21d according to the embodiment based on the circuit diagram of FIG. 8 . Figure 15 is a partial layout of the bidirectional switching device 21d showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 21d. Cross-sectional views taken along lines AA', BB', CC' in Figure 15 and cross-sections taken along lines AA', BB' and CC' in Figure 4 The views are the same, so reference is made to Figures 5A to 5C. Cross-sectional views taken along lines DD' and EE' in Figure 15 are shown in Figures 16A and 16B, respectively. For simplicity, identical structural elements in Figures 4, 5A to 5D and Figures 15, 16A to 16B are given the same reference numerals and symbols and will not be described in further detail.

參考圖15和圖16A至16B。雙向切換器件21d類似於雙向切換器件11，不同之處在於雙向切換器件21d進一步包括電阻性元件180d。電阻性元件包括：第一端181d，其電連接到基板102以充當電阻器R1的第一端子；和第二端182d，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 15 and Figures 16A-16B. The bidirectional switching device 21d is similar to the bidirectional switching device 11, except that the bidirectional switching device 21d further includes a resistive element 180d. The resistive element includes a first terminal 181d electrically connected to the substrate 102 to serve as a first terminal of the resistor R1 and a second terminal 182d electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180d可安置在鈍化層126內。鈍化層126拆分成電阻性元件180d下方的下層126a和電阻性元件180d上方的上層126b。換句話說，電阻性元件180d包夾在第一層126a與下層126a和上層126b之間。第一端181d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182e可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 Resistive element 180d may be disposed within passivation layer 126. The passivation layer 126 is split into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower and upper layers 126a, 126b. The first end 181d may be electrically coupled to the substrate through at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102. The second end 182e may be electrically connected to the reference pad through at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件21d的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於下部鈍化層126a沉積在鈍化層124上；毯覆式金屬/金屬化合物層143沉積在鈍化層126a上且圖案化以形成電阻性元件180d；上部鈍化層126b沉積在下部鈍化層126a之上以覆蓋電阻性元件180d；一個或多個第三導電通孔134形成於上部鈍化層126b中以電耦合電阻性元件180d。 The fabrication method of the bidirectional switching device 21d may include the stages shown in Figures 6A to 6K, except that the lower passivation layer 126a is deposited on the passivation layer 124; the blanket metal/metal compound layer 143 is deposited on the passivation layer 126a and patterned to form a resistive element 180d; an upper passivation layer 126b is deposited on the lower passivation layer 126a to cover the resistive element 180d; one or more third conductive vias 134 are formed in the upper passivation layer 126b to electrically couple the resistor Sex element 180d.

圖17和圖18A至18B顯示基於圖8的電路圖的根據實施例的雙向切換器件21e的結構。圖17為展示可構成雙向切換器件21e中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件21e的部分佈局。沿圖17中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖4中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖5A至5C。沿圖17中的線D-D'和E-E'截取的橫截面視圖分別在圖18A和18B中顯示。出於簡潔性，圖4、5A至5D和圖17、18A至18B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 17 and 18A to 18B show the structure of the bidirectional switching device 21e according to the embodiment based on the circuit diagram of FIG. 8 . 17 is a partial layout of the bidirectional switching device 21e showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 21e. Cross-sectional views taken along lines AA', BB', CC' in Figure 17 and cross-sections taken along lines AA', BB' and CC' in Figure 4 The views are the same, so reference is made to Figures 5A to 5C. Cross-sectional views taken along lines DD' and EE' in Figure 17 are shown in Figures 18A and 18B, respectively. For simplicity, identical structural elements in Figures 4, 5A to 5D and Figures 17, 18A to 18B are given the same reference numerals and symbols and will not be described in further detail.

參考圖17和圖18A至18B。雙向切換器件21e類似於雙向切換器件11，不同之處在於雙向切換器件21e進一步包括電阻性元件180e。電阻性元件包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 17 and Figures 18A-18B. The bidirectional switching device 21e is similar to the bidirectional switching device 11, except that the bidirectional switching device 21e further includes a resistive element 180e. The resistive element includes a first terminal 181e electrically connected to the substrate 102 to serve as a first terminal of the resistor R1 and a second terminal 182e electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180e可安置在第二鈍化層126上且由與導電跡線142相同的材料製成。第一端181e可通過至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182e可通過至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 Resistive element 180e may be disposed on second passivation layer 126 and be made of the same material as conductive trace 142 . The first end 181e may be electrically coupled to the substrate 102 through at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e may be electrically connected to the reference pad through at least one second conductive via 136 and at least one second conductive trace 146 .

雙向切換器件21e的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6G中所顯示的階段處，毯覆式導電層141圖案化以同時形成導電跡線142和電阻性元件180e。 The fabrication method of the bidirectional switching device 21e may include the stages shown in FIGS. 6A to 6K, except that at the stage shown in FIG. 6G, the blanket conductive layer 141 is patterned to simultaneously form the conductive traces 142 and Resistive element 180e.

圖19和圖20A至20B顯示基於圖8的電路圖的根據實施例的雙向切換器件21f的結構。圖19為展示可構成雙向切換器件21f中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件21f的部分佈局。沿圖19中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖4中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖5A至5C。沿圖19中的線D-D'和E-E'截取的橫截面視圖分別在圖20A和20B中顯示。出於簡潔性，圖4、5A至5D和圖19、20A至20B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 19 and 20A to 20B show the structure of the bidirectional switching device 21f according to the embodiment based on the circuit diagram of FIG. 8 . Figure 19 is a partial layout of the bidirectional switching device 21f showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 21f. Cross-sectional views taken along lines AA', BB', CC' in Figure 19 and cross-sections taken along lines AA', BB' and CC' in Figure 4 The views are the same, so reference is made to Figures 5A to 5C. Cross-sectional views taken along lines DD' and EE' in Figure 19 are shown in Figures 20A and 20B, respectively. For simplicity, identical structural elements in Figures 4, 5A to 5D and Figures 19, 20A to 20B are given the same reference numerals and symbols and will not be described in further detail.

參考圖19和圖20A至20B。雙向切換器件21f類似於雙向切換器件11，不同之處在於雙向切換器件21f進一步包括電阻性元件180f。電阻性元件包括：第一端181f，其電連接到基板102以充當電阻器R1的第一端子；和第二端182f，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 19 and Figures 20A-20B. The bidirectional switching device 21f is similar to the bidirectional switching device 11 except that the bidirectional switching device 21f further includes a resistive element 180f. The resistive element includes a first terminal 181f electrically connected to the substrate 102 to serve as a first terminal of the resistor R1 and a second terminal 182f electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180f可安置在第三鈍化層128上且由與導電跡線146相同的材料製成。第一端181f可通過至少一個TGV 162電耦合到基板102。第二端182f可電連接到參考墊。 Resistive element 18Of may be disposed on third passivation layer 128 and made of the same material as conductive trace 146 . The first end 181f may be electrically coupled to the substrate 102 through at least one TGV 162. The second end 182f can be electrically connected to the reference pad.

雙向切換器件21f的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6J中所顯示的階段處，毯覆式導電層145圖案化以同時形成導電跡線146和電阻性元件180f。 The method of fabricating bidirectional switching device 21f may include the stages shown in Figures 6A through 6K, except that at the stage shown in Figure 6J, blanket conductive layer 145 is patterned to simultaneously form conductive traces 146 and Resistive element 180f.

圖21為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件3的電路框圖。雙向切換器件3類似於雙向切換器件1。出於簡潔性，圖1和圖21中的相同元件給出相同參考標號和符號，且將不進一步詳細描述。 Figure 21 is a circuit block diagram of a bidirectional switching device 3 with substrate potential management capabilities according to some embodiments of the present invention. Bidirectional switching device 3 is similar to bidirectional switching device 1 . For simplicity, identical elements in Figures 1 and 21 are given the same reference numbers and symbols and will not be described in further detail.

如圖21中所示，雙向切換器件3具有控制節點CTRL、第一電力/負載節點P/L1、第二電力/負載節點P/L2、參考節點REF和主基板。 As shown in FIG. 21 , the bidirectional switching device 3 has a control node CTRL, a first power/load node P/L1 , a second power/load node P/L2 , a reference node REF, and a main substrate.

雙向切換器件3包括：氮化物基雙側電晶體Qm；和基板電位管理電路，其配置成用於管理雙向切換器件3的主基板的電位。 The bidirectional switching device 3 includes: a nitride-based double-sided transistor Q m ; and a substrate potential management circuit configured to manage the potential of the main substrate of the bidirectional switching device 3 .

雙側電晶體Qm可具有電連接到控制節點的主閘極端子Gm、電連接到第一電力/負載節點的第一源極/汲極端子S/D1、電連接到第二電力/負載節點的第二源極/汲極端子S/D2，和電連接到主基板的主基板端子SUB。 The double-sided transistor Q m may have a main gate terminal G m electrically connected to the control node, a first source/drain terminal S/D1 electrically connected to the first power/load node, a second power/drain terminal S/D1 electrically connected to the second power/load node The second source/drain terminal S/D2 of the load node, and the main substrate terminal SUB are electrically connected to the main substrate.

基板電位管理電路可包括第一電位穩定元件F1，所述第一電位穩定元件F1具有電連接到控制節點的控制端子、電連接到第一電力/負載節點的第一傳導端子、電連接到主基板的第二傳導端子和電連接到主基板的基板端子。 The substrate potential management circuit may include a first potential stabilizing element F1 having a control terminal electrically connected to the control node, a first conductive terminal electrically connected to the first power/load node, a main The second conductive terminal of the substrate is electrically connected to the substrate terminal of the main substrate.

主基板可通過參考節點電連接到第二電位穩定元件F2。 The main substrate may be electrically connected to the second potential stabilizing element F2 through the reference node.

當將高電平電壓施加到控制節點時，第一電位穩定元件F1可具有低於第二電位穩定元件F2的第二電阻的第一電阻，使得主基板的電位基本上等於第一和第二電力/負載節點的電位中的較低一個。 When a high-level voltage is applied to the control node, the first potential stabilizing element F1 may have a first resistance lower than the second resistance of the second potential stabilizing element F2 so that the potential of the main substrate is substantially equal to the first and second potential stabilizing elements F2. The lower of the potentials of the power/load node.

當將低電平電壓施加到控制節點時，第一電阻可高於第二電阻，使得主基板的電位基本上等於接地電位。 When a low-level voltage is applied to the control node, the first resistance may be higher than the second resistance so that the potential of the main substrate is substantially equal to the ground potential.

圖22描繪基於圖21的電路框圖的根據一些實施例的雙向切換器件31的電路圖。參考圖22。第一電位穩定元件F1可包括第一基板耦合電晶體Q1， 所述第一基板耦合電晶體Q1具有電連接到控制節點的第一閘極端子G1、電連接到第一電力/負載節點的第一汲極端子D1和電連接到主基板的第一源極端子S1。 FIG. 22 depicts a circuit diagram of a bidirectional switching device 31 according to some embodiments based on the circuit block diagram of FIG. 21 . Refer to Figure 22. The first potential stabilizing element F1 may include a first substrate coupling transistor Q1, The first substrate coupling transistor Q1 has a first gate terminal G1 electrically connected to the control node, a first drain terminal D1 electrically connected to the first power/load node and a first source terminal electrically connected to the main substrate Sub-S1.

第一基板耦合電晶體Q1可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 The first substrate coupling transistor Q1 may be constructed from various types of transistors, including but not limited to GaN HEMTs, Si MOSFETs, insulated gate bipolar transistors (IGBTs), junction field effect transistors (JFETs), and static sensing transistors ( SIT).

第二電位穩定元件F2可為電阻器R1，所述電阻器R1具有通過參考節點連接到主基板的第一端子，和連接到接地的第二端子。 The second potential stabilizing element F2 may be a resistor R1 having a first terminal connected to the main substrate through a reference node, and a second terminal connected to the ground.

電阻器R1可選擇以具有比第一基板耦合電晶體的導通電阻高得多的電阻值。 Resistor R1 may be selected to have a resistance value that is much higher than the on-resistance of the first substrate coupling transistor.

電阻器R1可選擇以具有比第一基板耦合電晶體的截止電阻低得多的電阻值。 Resistor R1 may be selected to have a resistance value that is much lower than the off-resistance of the first substrate coupling transistor.

舉例來說，電阻器R1可選擇以具有在大約0.1Ω到大約1GΩ範圍內的電阻值。 For example, resistor R1 may be selected to have a resistance value in the range of approximately 0.1Ω to approximately 1GΩ.

圖23A和圖23B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的圖22中的雙向切換器件31的操作機構。 23A and 23B depict the bidirectional switching of FIG. 22 in a first mode of operation in which the first power/load node is biased at a voltage VH higher than the voltage VL applied to the second power/load node. Operating mechanism of device 31.

參考圖23A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1導通時，基板的電位Vsub通過下式給出：Vsub=(VL+Vm,on)*R/(Rs1,on+R)，其中R為電阻器R1的電阻，Rs1,on為第一基板耦合電晶體Q1的導通電阻，且Vm,on為雙側電晶體Qm在其導通時的汲極-源極電壓。由於R比Rs1,on大得多，所以基板的電位Vsub基本上等於VL+Vm,on。 Refer to Figure 23A. When the high-level voltage VON is applied to the control node so that the double-sided transistor Q m and the first substrate coupling transistor Q1 are turned on, the potential V sub of the substrate is given by the following formula: V sub =(V L +V m ,on )*R/(R s1,on +R), where R is the resistance of the resistor R1, R s1,on is the on-resistance of the first substrate coupling transistor Q1, and V m,on is the double-sided transistor The drain-source voltage of Q m when it is on. Since R is much larger than R s1,on , the potential V sub of the substrate is basically equal to VL+V m,on .

參考圖23B。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1截止時，基板的電位Vsub通過下式給出：Vsub=(VL+Vm,off)*R/(Rs1,off+R)，其中Rs1,off為第一基板耦合電晶體Q1的截止電阻，Vm,off為雙側電晶體Qm在其截止時的汲極-源極電壓。由於Rs1,off比R大得多，所以那麼基板的電位Vsub基本上等於0v，也就是接地電位。 Refer to Figure 23B. When the low-level voltage V OFF is applied to the control node so that the double-sided transistor Q m and the first substrate coupling transistor Q1 are turned off, the potential V sub of the substrate is given by the following formula: V sub =(V L +V m,off )*R/(R s1,off +R), where R s1,off is the off-resistance of the first substrate coupling transistor Q1, and V m,off is the drain resistance of the double-sided transistor Q m when it is off. pole-source voltage. Since R s1,off is much larger than R, the potential V sub of the substrate is basically equal to 0v, which is the ground potential.

圖23C和圖23D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的圖22中的雙向切換器件31的操作機構。 Figures 23C and 23D depict the bidirectional switching of Figure 22 in a second mode of operation in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node. Operating mechanism of device 31.

參考圖23C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1導通時，基板的電位Vsub通過下式給出：Vsub=VL*R/(Rs1,on+R)。由於R比Rs1,on大得多，所以基板的電位Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 23C. When the high-level voltage V ON is applied to the control node so that the double-sided transistor Q m and the first substrate coupling transistor Q1 are turned on, the potential V sub of the substrate is given by the following formula: V sub =V L *R/ (R s1,on +R). Since R is much larger than R s1,on , the potential V sub of the substrate is substantially equal to the voltage V L applied to the second power/load node.

參考圖23D。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1截止時，基板的電位Vsub通過下式給出：Vsub=VL*R/(Rs1,off+R)。由於Rs1,off比R大得多，所以那麼基板的電位Vsub基本上等於0v，也就是接地電位。 Refer to Figure 23D. When the low-level voltage V OFF is applied to the control node so that the double-sided transistor Q m and the first substrate coupling transistor Q1 are turned off, the potential V sub of the substrate is given by the following formula: V sub =V L *R/ (R s1,off +R). Since R s1,off is much larger than R, the potential V sub of the substrate is basically equal to 0v, which is the ground potential.

氮化物基雙側電晶體Qm可與第一電位穩定元件F1和第二電位穩定元件F2集成以形成積體電路(IC)晶片。因此，圖22的雙向切換器件31可通過將氮化物基雙側電晶體Qm和第一基板耦合電晶體Q1集成在IC晶片中而形成。 The nitride-based double-sided transistor Q m may be integrated with the first potential stabilizing element F1 and the second potential stabilizing element F2 to form an integrated circuit (IC) chip. Therefore, the bidirectional switching device 31 of FIG. 22 can be formed by integrating the nitride-based double-sided transistor Qm and the first substrate coupling transistor Q1 in an IC wafer.

圖24和25A至25D顯示基於圖2的電路圖的雙向切換器件31的結構。圖24為展示可構成雙向切換器件31中的電晶體的部分的一些元件當中的關係的雙向切換器件31的部分佈局。圖25A至25D為分別沿圖24中的線A-A'、B-B'、 C-C'和D-D'截取的橫截面視圖。雙向切換器件31具有類似於雙向切換器件11的層狀結構。出於簡潔性，圖4、5A至5D和圖24、25A至25B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 24 and 25A to 25D show the structure of the bidirectional switching device 31 based on the circuit diagram of FIG. 2 . FIG. 24 is a partial layout of bidirectional switching device 31 illustrating the relationship among some of the elements that may form part of the transistor in bidirectional switching device 31 . Figures 25A to 25D are diagrams along lines A-A', BB', and Cross-sectional views taken from C-C' and D-D'. The bidirectional switching device 31 has a layered structure similar to the bidirectional switching device 11 . For simplicity, identical structural elements in Figures 4, 5A to 5D and Figures 24, 25A to 25B are given the same reference numerals and symbols and will not be described in further detail.

參考圖24和25A至25D，雙向切換器件31可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層154和一個或多個鎵穿孔(TGV)162。 Referring to FIGS. 24 and 25A to 25D, the bidirectional switching device 31 may include a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, an S/D electrode 116, a first passivation layer 124. Passivation layer 126, third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more third Two conductive traces 146 , protective layer 154 and one or more gallium vias (TGV) 162 .

氮化物基半導體層104安置在基板102之上。氮化物基半導體層106安置在氮化物基半導體層104上。 The nitride-based semiconductor layer 104 is disposed over the substrate 102 . The nitride-based semiconductor layer 106 is disposed on the nitride-based semiconductor layer 104 .

閘極結構110安置在第二氮化物基半導體層上/之上/上方。閘極結構110中的每一個可包含任選的閘極半導體層112和閘極金屬層114。閘極半導體層112和閘極金屬層114堆疊在氮化物基半導體層106上。閘極半導體層112在氮化物基半導體層106與閘極金屬層114之間。 The gate structure 110 is disposed on/on/over the second nitride-based semiconductor layer. Each of gate structures 110 may include optional gate semiconductor layer 112 and gate metal layer 114 . The gate semiconductor layer 112 and the gate metal layer 114 are stacked on the nitride-based semiconductor layer 106 . The gate semiconductor layer 112 is between the nitride-based semiconductor layer 106 and the gate metal layer 114 .

氮化物基雙側電晶體Qm和第一基板耦合電晶體Q1可為增強型器件，所述增強型器件在其閘電極114在大約零偏置下時處於常關狀態。 The nitride-based double-sided transistor Qm and the first substrate coupling transistor Q1 may be enhancement-mode devices that are in a normally-off state when their gate electrode 114 is at approximately zero bias.

S/D電極116安置在氮化物基半導體層106上。S/D電極116可位於對應閘極結構110的兩個相對側處，但可使用其它配置，尤其當在器件中採用多個源電極、汲電極或閘電極時。閘極結構110中的每一個可佈置成使得閘極結構110中的每一個位於S/D電極116中的至少兩個之間。閘極結構110和S/D電極116可共同充當具有2DEG區的至少一個氮化物基/GaN基HEMT。在一些實施例中，S/D電極116可與氮化物基半導體層106形成歐姆接觸。 The S/D electrode 116 is disposed on the nitride-based semiconductor layer 106 . S/D electrodes 116 may be located on opposite sides of corresponding gate structure 110, but other configurations may be used, especially when multiple source, drain, or gate electrodes are employed in the device. Each of the gate structures 110 may be arranged such that each of the gate structures 110 is located between at least two of the S/D electrodes 116 . Gate structure 110 and S/D electrode 116 may together function as at least one nitride-based/GaN-based HEMT having a 2DEG region. In some embodiments, S/D electrode 116 may form an ohmic contact with nitride-based semiconductor layer 106 .

鈍化層124安置在氮化物基半導體層106之上。鈍化層124覆蓋氮化物基半導體層106的頂部表面。鈍化層124可覆蓋閘極結構110。鈍化層124可至少覆蓋閘極結構110的相對的兩個側壁。S/D電極116可穿透/穿過鈍化層124以接觸氮化物基半導體層106。 Passivation layer 124 is disposed over nitride-based semiconductor layer 106 . Passivation layer 124 covers the top surface of nitride-based semiconductor layer 106 . Passivation layer 124 may cover gate structure 110 . The passivation layer 124 may cover at least two opposite sidewalls of the gate structure 110 . The S/D electrode 116 may penetrate/pass through the passivation layer 124 to contact the nitride-based semiconductor layer 106 .

鈍化層126安置在鈍化層124和S/D電極116上方。鈍化層126覆蓋鈍化層124和S/D電極116。 Passivation layer 126 is disposed over passivation layer 124 and S/D electrode 116 . Passivation layer 126 covers passivation layer 124 and S/D electrode 116 .

導電通孔132安置在鈍化層126和鈍化層124內。導電通孔132穿透鈍化層126和鈍化層124。導電通孔132縱向延伸以分別與閘極結構110和S/D電極116電耦合。導電通孔132的上表面不受鈍化層126覆蓋。 Conductive vias 132 are disposed within passivation layers 126 and 124 . Conductive vias 132 penetrate passivation layer 126 and passivation layer 124 . Conductive vias 132 extend longitudinally to electrically couple with gate structure 110 and S/D electrode 116, respectively. The upper surface of the conductive via 132 is not covered by the passivation layer 126 .

導電跡線142安置在鈍化層126和導電通孔132上。導電跡線142與導電通孔132接觸。導電跡線142可通過使安置在鈍化層126和導電通孔132上的導電層圖案化而形成。 Conductive traces 142 are disposed on passivation layer 126 and conductive vias 132 . Conductive trace 142 contacts conductive via 132 . Conductive traces 142 may be formed by patterning a conductive layer disposed over passivation layer 126 and conductive vias 132 .

鈍化層128安置在鈍化層126和導電跡線142上方。鈍化層128覆蓋鈍化層126和導電跡線142。鈍化層128可充當平坦化層，所述平坦化層具有用以支撐其它層/元件的水準頂部表面。 Passivation layer 128 is disposed over passivation layer 126 and conductive traces 142 . Passivation layer 128 covers passivation layer 126 and conductive traces 142 . Passivation layer 128 may act as a planarization layer with a horizontal top surface to support other layers/components.

導電通孔136安置在鈍化層128內。導電通孔136穿透鈍化層128。導電通孔136縱向延伸以與導電跡線142電耦合。導電通孔136的上表面不受鈍化層136覆蓋。 Conductive vias 136 are disposed within passivation layer 128 . Conductive vias 136 penetrate passivation layer 128 . Conductive vias 136 extend longitudinally to electrically couple with conductive traces 142 . The upper surface of the conductive via 136 is not covered by the passivation layer 136 .

導電跡線146安置在鈍化層128和導電通孔136上。導電跡線146與導電通孔136接觸。導電跡線146可通過使安置在鈍化層128和導電通孔136上的導電層圖案化而形成。 Conductive traces 146 are disposed on passivation layer 128 and conductive vias 136 . Conductive trace 146 contacts conductive via 136 . Conductive traces 146 may be formed by patterning a conductive layer disposed over passivation layer 128 and conductive vias 136 .

TGV 162形成為從第二導電層146縱向延伸且穿透到基板102中。TGV 162的上表面不受第三鈍化層128覆蓋。在一些實施例中，TGV 162可形成為從第一導電層142縱向延伸且穿透到基板102中。TGV 162的上表面不受第二鈍化層126覆蓋。 TGV 162 is formed to extend longitudinally from second conductive layer 146 and penetrate into substrate 102 . The upper surface of TGV 162 is not covered by third passivation layer 128 . In some embodiments, TGV 162 may be formed to extend longitudinally from first conductive layer 142 and penetrate into substrate 102 . The upper surface of TGV 162 is not covered by second passivation layer 126 .

保護層154安置在鈍化層128和導電層146上方。保護層154覆蓋鈍化層128和導電層146。保護層154可防止導電層146氧化。導電層146的一些部分可通過保護層154中的開口暴露以形成導電墊170，所述導電墊170配置成電連接到外部元件(例如，外部電路)。 Protective layer 154 is disposed over passivation layer 128 and conductive layer 146 . Protective layer 154 covers passivation layer 128 and conductive layer 146 . The protective layer 154 can prevent the conductive layer 146 from oxidation. Portions of conductive layer 146 may be exposed through openings in protective layer 154 to form conductive pads 170 configured to electrically connect to external components (eg, external circuitry).

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；第二電力/負載墊P/L2，其配置成充當第二電力/負載節點；和參考墊REF，其配置成充當參考節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; second power/load pad P/L2 configured to act as a second power/load node; and a reference pad REF configured to act as a reference node.

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm和第一基板耦合電晶體Q1。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm and first substrate coupling transistor Q1.

參考圖25A。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。 Refer to Figure 25A. The S/D electrode 116 may include at least one first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . A source/drain terminal and the drain terminal of the first substrate coupling transistor Q1.

第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和第一基板耦合電晶體Q1共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the first substrate coupling transistor Q1, so that the chip size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the first source/drain terminal of the nitride-based two-sided transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

參考圖25B。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 25B. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm . The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到控制墊且配置成充當第一基板耦合電晶體Q1的閘極端子。第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Gate structure 110 may further include at least one second gate structure 110b electrically connected to the control pad and configured to serve as a gate terminal for first substrate coupling transistor Q1. The second gate structure 110b may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖25C。S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子。第二S/D電極116b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 Refer to Figure 25C. The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . Two source/drain terminals. The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖25D。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102和參考墊且配置成充當第一基板耦合電晶體Q1的源極端子。第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。第三S/D電極116c可進一步通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146電連接到參考墊。 Refer to Figure 25D. The S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to the substrate 102 and the reference pad and configured to serve as the source terminal of the first substrate coupling transistor Q1. The third S/D electrode 116c may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The third S/D electrode 116c may be further electrically connected to the reference pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三S/D電極116c鄰近於第一S/D電極116a；且第二閘極結構110b在第一S/D電極116a與第三S/D電極116c之間。 Preferably, the third S/D electrode 116c is adjacent to the first S/D electrode 116a; and the second gate structure 110b is between the first S/D electrode 116a and the third S/D electrode 116c.

雙向切換器件31的製造方法類似於雙向切換器件11的製造方法，因此可包含在圖6A至6K中所顯示的階段。 The manufacturing method of the bidirectional switching device 31 is similar to the manufacturing method of the bidirectional switching device 11 and therefore may be included in the stages shown in FIGS. 6A to 6K .

返回參考圖25A至25D，氮化物基雙側電晶體Qm可通過以下操作構造：將至少一個第一S/D電極電連接到第一電力/負載墊以形成氮化物基雙側電晶體Qm的第一S/D端子；將至少一個第二S/D電極電連接到第二電力/負載墊以形成氮化物基雙側電晶體Qm的第二S/D端子；和將至少一個第一閘極結構電連接到控制墊以形成氮化物基雙側電晶體Qm的主閘極端子。 Referring back to FIGS. 25A to 25D , the nitride-based two-sided transistor Q m may be constructed by electrically connecting at least one first S/D electrode to the first power/load pad to form the nitride-based two-sided transistor Q m a first S/D terminal of m ; electrically connecting at least one second S/D electrode to the second power/load pad to form a second S/D terminal of the nitride-based double-sided transistor Q m ; and connecting at least one The first gate structure is electrically connected to the control pad to form the main gate terminal of the nitride-based double-sided transistor Qm .

第一基板耦合電晶體Q1可通過以下操作構造：使用第一S/D電極作為第一基板耦合電晶體Q1的汲極端子；將至少一個第三S/D電極電連接到基板以形成第一基板耦合電晶體Q1的源極端子；和將至少一個第二閘極結構電連接到控制墊以形成第一基板耦合電晶體Q1的閘極端子。 The first substrate coupling transistor Q1 may be constructed by using the first S/D electrode as a drain terminal of the first substrate coupling transistor Q1; and electrically connecting at least one third S/D electrode to the substrate to form the first a source terminal of substrate coupling transistor Q1; and electrically connecting at least one second gate structure to the control pad to form a gate terminal of first substrate coupling transistor Q1.

圖26為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件4的電路框圖。雙向切換器件4類似於雙向切換器件3。出於簡潔性，圖21和圖26中的相同元件給出相同參考標號和符號，且將不進一步詳細描述。 Figure 26 is a circuit block diagram of a bidirectional switching device 4 with substrate potential management capabilities according to some embodiments of the present invention. Bidirectional switching device 4 is similar to bidirectional switching device 3 . For simplicity, identical elements in Figures 21 and 26 are given the same reference numbers and symbols and will not be described in further detail.

如圖26中所示，圖26的雙向切換器件4不同於圖21的雙向切換器件3，因為所述雙向切換器件4的基板電位管理電路進一步包括第二電位穩定元件F2，所述第二電位穩定元件F2具有連接到主基板的第一傳導端子和連接到參考節點的第二傳導端子。 As shown in FIG. 26 , the bidirectional switching device 4 of FIG. 26 is different from the bidirectional switching device 3 of FIG. 21 because the substrate potential management circuit of the bidirectional switching device 4 further includes a second potential stabilizing element F2. The stabilizing element F2 has a first conductive terminal connected to the main substrate and a second conductive terminal connected to the reference node.

當將高電平電壓施加到控制節點時，第一電位穩定元件F1可具有低於第二電位穩定元件F2的第二電阻的第一電阻，使得主基板的電位基本上等於第一和第二電力/負載節點的電位中的較低一個。 When a high-level voltage is applied to the control node, the first potential stabilizing element F1 may have a first resistance lower than the second resistance of the second potential stabilizing element F2 so that the potential of the main substrate is substantially equal to the first and second resistances. The lower of the potentials of the power/load node.

當將低電平電壓施加到控制節點時，第一電阻可高於第二電阻，使得主基板的電位基本上等於接地電位。 When a low-level voltage is applied to the control node, the first resistance may be higher than the second resistance so that the potential of the main substrate is substantially equal to the ground potential.

圖27為基於圖26的電路框圖的根據一些實施例的雙向切換器件41的電路圖。雙向切換器件41類似於圖22的雙向切換器件31。出於簡潔性，圖22和圖27中的相同元件給出相同參考標號和符號，且將不進一步詳細描述。 FIG. 27 is a circuit diagram of the bidirectional switching device 41 according to some embodiments based on the circuit block diagram of FIG. 26 . The bidirectional switching device 41 is similar to the bidirectional switching device 31 of FIG. 22 . For simplicity, identical elements in Figures 22 and 27 are given the same reference numbers and symbols and will not be described in further detail.

如圖27中所示。圖27的雙向切換器件41不同於圖22的雙向切換器件31，因為所述雙向切換器件41的第三電位穩定元件F3可為電阻器R1，所述電阻器R1具有連接到主基板的第一端子和通過參考節點連接到接地的第二端子。 As shown in Figure 27. The bidirectional switching device 41 of FIG. 27 is different from the bidirectional switching device 31 of FIG. 22 because the third potential stabilizing element F3 of the bidirectional switching device 41 may be a resistor R1 having a first resistor connected to the main substrate. terminal and a second terminal connected to ground through the reference node.

雙向切換器件41的操作機構與雙向切換器件31的操作機構相同，因此可參考圖23A至23D。出於簡潔性和簡單性，將不進一步詳細描述雙向切換器件41的操作機構。 The operating mechanism of the bidirectional switching device 41 is the same as that of the bidirectional switching device 31, so reference can be made to FIGS. 23A to 23D. For the sake of brevity and simplicity, the operating mechanism of the bidirectional switching device 41 will not be described in further detail.

氮化物基雙側電晶體Qm可與第一電位穩定元件F1和第二電位穩定元件F2集成以形成積體電路(IC)晶片。因此，圖27的雙向切換器件41可通過將氮化物基雙側電晶體Qm和第一基板耦合電晶體Q1和電阻器R1集成在IC晶片中而形成。 The nitride-based double-sided transistor Q m may be integrated with the first potential stabilizing element F1 and the second potential stabilizing element F2 to form an integrated circuit (IC) chip. Therefore, the bidirectional switching device 41 of FIG. 27 can be formed by integrating the nitride-based double-sided transistor Q m and the first substrate coupling transistor Q1 and resistor R1 in an IC wafer.

圖28和圖29A至29B顯示基於圖27的電路圖的根據實施例的雙向切換器件41a的結構。圖28為展示可構成雙向切換器件41a中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件41a的部分佈局。沿圖28中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖24中的線A-A'、B-B'和C-C'截取的橫截面視 圖相同，因此可參考圖25A至25C。沿圖28中的線D-D'和E-E'截取的橫截面視圖分別在圖29A和29B中顯示。出於簡潔性，圖24、25A至25D和圖28、29A至29B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 28 and 29A to 29B show the structure of the bidirectional switching device 41 a according to the embodiment based on the circuit diagram of FIG. 27 . Figure 28 is a partial layout of a bidirectional switching device 41a showing the relationship among some elements that may constitute part of a transistor and a resistor in the bidirectional switching device 41a. Cross-sectional views taken along lines AA', BB', CC' in Figure 28 and cross-sections taken along lines AA', BB' and CC' in Figure 24 view The figures are the same, so refer to Figures 25A to 25C. Cross-sectional views taken along lines DD' and EE' in Figure 28 are shown in Figures 29A and 29B, respectively. For simplicity, identical structural elements in Figures 24, 25A to 25D and Figures 28, 29A to 29B are given the same reference numerals and symbols and will not be described in further detail.

參考圖28和圖29A至29B。雙向切換器件41a類似於雙向切換器件31，不同之處在於雙向切換器件41a進一步包括電阻性元件180a。電阻性元件180a包括：第一端181a，其電連接到基板102以充當電阻器R1的第一端子；和第二端182a，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 28 and Figures 29A-29B. The bidirectional switching device 41a is similar to the bidirectional switching device 31, except that the bidirectional switching device 41a further includes a resistive element 180a. Resistive element 180a includes a first terminal 181a electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182a electrically connected to a reference pad to serve as a second terminal of resistor R1.

電阻性元件180a可安置在鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區的同一層處。第一端181a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 The resistive element 180a may be disposed at the same layer of the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a may pass through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least A TGV 162 is electrically coupled to the substrate 102 . The second end 182a may be electrically connected through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146 to the reference pad.

雙向切換器件41a的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6A和圖6B中所顯示的階段之間，鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區通過離子注入圖案化以形成電阻性元件180a。 The method of manufacturing the bidirectional switching device 41a may include the stages shown in FIGS. 6A to 6K, except that between the stages shown in FIGS. 6A and 6B, adjacent to the first nitride-based semiconductor layer 104 and the The 2DEG region of the heterojunction interface between the dinitride-based semiconductor layers 106 is patterned by ion implantation to form the resistive element 180a.

圖30和圖31A至31B顯示基於圖27的電路圖的根據另一實施例的雙向切換器件41b的結構。圖30為展示可構成雙向切換器件41b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件41b的部分佈局。沿圖30中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖24中的線A-A'、B-B'和C-C'截取的 橫截面視圖相同，因此可參考圖25A至25C。沿圖30中的線D-D'和E-E'截取的橫截面視圖分別在圖31A和31B中顯示。出於簡潔性，圖24、25A至25D和圖30、31A至31B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 30 and 31A to 31B show the structure of the bidirectional switching device 41b according to another embodiment based on the circuit diagram of FIG. 27 . Figure 30 is a partial layout of a bidirectional switching device 41b showing the relationship among some elements that may constitute part of a transistor and a resistor in the bidirectional switching device 41b. Cross-sectional views taken along lines AA', BB', CC' in Figure 30 are the same as those taken along lines AA', BB' and CC' in Figure 24 The cross-sectional views are the same, so reference is made to Figures 25A to 25C. Cross-sectional views taken along lines DD' and EE' in Figure 30 are shown in Figures 31A and 31B, respectively. For simplicity, identical structural elements in Figures 24, 25A to 25D and Figures 30, 31A to 31B are given the same reference numerals and symbols and will not be described in further detail.

參考圖30和圖31A至31B。雙向切換器件41b類似於雙向切換器件31，不同之處在於雙向切換器件41b進一步包括電阻性元件180b。電阻性元件包括：第一端181b，其電連接到基板102以充當電阻器R1的第一端子；和第二端182b，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 30 and Figures 31A to 31B. The bidirectional switching device 41b is similar to the bidirectional switching device 31, except that the bidirectional switching device 41b further includes a resistive element 180b. The resistive element includes a first terminal 181b electrically connected to the substrate 102 to serve as a first terminal of the resistor R1 and a second terminal 182b electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180b可安置在第二氮化物基半導體層106上且由與閘極結構310相同的材料製成。第一端181b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 The resistive element 180b may be disposed on the second nitride-based semiconductor layer 106 and be made of the same material as the gate structure 310 . The first end 181b may be electrically coupled to the substrate through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102. The second end 182b may be electrically connected to the reference pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件41b的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6C中所顯示的階段處，毯覆式半導體層111和毯覆式閘電極層113圖案化以同時形成閘極結構310和電阻性元件180b。 The manufacturing method of the bidirectional switching device 41 b may include the stages shown in FIGS. 6A to 6K , except that at the stage shown in FIG. 6C , the blanket semiconductor layer 111 and the blanket gate electrode layer 113 are patterned. The gate structure 310 and the resistive element 180b are formed simultaneously.

圖32和圖33A至33B顯示基於圖27的電路圖的根據實施例的雙向切換器件41c的結構。圖32為展示可構成雙向切換器件41c中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件41c的部分佈局。沿圖32中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖24中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖25A至25C。沿圖32中的線D-D'和E-E'截取的橫截面視圖分 別在圖33A和33B中顯示。出於簡潔性，圖24、25A至25D和圖32、33A至33B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 FIG. 32 and FIGS. 33A to 33B show the structure of the bidirectional switching device 41 c according to the embodiment based on the circuit diagram of FIG. 27 . 32 is a partial layout of the bidirectional switching device 41c showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 41c. Cross-sectional views taken along lines AA', BB', CC' in Figure 32 and cross-sections taken along lines AA', BB' and CC' in Figure 24 The views are the same, so reference is made to Figures 25A to 25C. Cross-sectional views taken along lines DD' and EE' in Figure 32 This is shown in Figures 33A and 33B. For simplicity, identical structural elements in Figures 24, 25A to 25D and Figures 32, 33A to 33B are given the same reference numerals and symbols and will not be described in further detail.

參考圖32和圖33A至33B。雙向切換器件41c類似於雙向切換器件31，不同之處在於雙向切換器件41c進一步包括電阻性元件180c。電阻性元件包括：第一端181c，其電連接到基板102以充當電阻器R1的第一端子；和第二端182c，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 32 and Figures 33A to 33B. The bidirectional switching device 41c is similar to the bidirectional switching device 31, except that the bidirectional switching device 41c further includes a resistive element 180c. The resistive element includes a first terminal 181c electrically connected to the substrate 102 to serve as a first terminal of the resistor R1 and a second terminal 182c electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180c可安置在第一鈍化層124上且由與S/D電極116相同的材料製成。第一端181c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 Resistive element 180c may be disposed on first passivation layer 124 and be made of the same material as S/D electrode 116 . The first end 181c may be electrically coupled to the substrate through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102. The second end 182c may be electrically connected to the reference pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件41c的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6E中所顯示的階段處，毯覆式導電層115圖案化以同時形成S/D電極116和電阻性元件180c。 The fabrication method of the bidirectional switching device 41c may include the stages shown in FIGS. 6A to 6K , except that at the stage shown in FIG. 6E , the blanket conductive layer 115 is patterned to simultaneously form the S/D electrode 116 and resistive element 180c.

圖34和圖35A至35B顯示基於圖27的電路圖的根據實施例的雙向切換器件41d的結構。圖34為展示可構成雙向切換器件41d中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件41d的部分佈局。沿圖34中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖24中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖25A至25C。沿圖34中的線D-D'和E-E'截取的橫截面視圖分別在圖35A和35B中顯示。出於簡潔性，圖24、25A至25D和圖34、35A至35B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 34 and 35A to 35B show the structure of the bidirectional switching device 41d according to the embodiment based on the circuit diagram of FIG. 27. 34 is a partial layout of the bidirectional switching device 41d showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 41d. Cross-sectional views taken along lines AA', BB', CC' in Figure 34 and cross-sections taken along lines AA', BB' and CC' in Figure 24 The views are the same, so reference is made to Figures 25A to 25C. Cross-sectional views taken along lines DD' and EE' in Figure 34 are shown in Figures 35A and 35B, respectively. For simplicity, identical structural elements in Figures 24, 25A to 25D and Figures 34, 35A to 35B are given the same reference numerals and symbols and will not be described in further detail.

參考圖34和圖35A至35B。雙向切換器件41d類似於雙向切換器件31，不同之處在於雙向切換器件41d進一步包括電阻性元件180d。電阻性元件包括：第一端181d，其電連接到基板102以充當電阻器R1的第一端子；和第二端182d，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 34 and Figures 35A-35B. The bidirectional switching device 41d is similar to the bidirectional switching device 31, except that the bidirectional switching device 41d further includes a resistive element 180d. The resistive element includes a first terminal 181d electrically connected to the substrate 102 to serve as a first terminal of the resistor R1 and a second terminal 182d electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180d可安置在鈍化層126內。鈍化層126拆分成電阻性元件180d下方的下層126a和電阻性元件180d上方的上層126b。換句話說，電阻性元件180d包夾在第一層126a與下層126a和上層126b之間。第一端181d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182e可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 Resistive element 180d may be disposed within passivation layer 126. The passivation layer 126 is split into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower and upper layers 126a, 126b. The first end 181d may be electrically coupled to the substrate through at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102. The second end 182e may be electrically connected to the reference pad through at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件41d的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於鈍化層126a沉積在鈍化層124上；毯覆式金屬/金屬化合物層143沉積在鈍化層126a上且圖案化以形成電阻性元件180d；鈍化層126b沉積在鈍化層126a之上以覆蓋電阻性元件180d；一個或多個第三導電通孔134形成於鈍化層126b中以電耦合電阻性元件180d。 The fabrication method of the bidirectional switching device 41d may include the stages shown in Figures 6A to 6K, except that the passivation layer 126a is deposited on the passivation layer 124; the blanket metal/metal compound layer 143 is deposited on the passivation layer 126a and Patterning is performed to form resistive element 180d; passivation layer 126b is deposited over passivation layer 126a to cover resistive element 180d; one or more third conductive vias 134 are formed in passivation layer 126b to electrically couple resistive element 180d.

圖36和圖37A至37B顯示基於圖27的電路圖的根據實施例的雙向切換器件41e的結構。圖36為展示可構成雙向切換器件41e中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件41e的部分佈局。沿圖36中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖24中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖25A至25C。沿圖36中的線D-D'和E-E'截取的橫截面視圖分 別在圖37A和37B中顯示。出於簡潔性，圖24、25A至25D和圖36、37A至37B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 36 and 37A to 37B show the structure of the bidirectional switching device 41 e according to the embodiment based on the circuit diagram of FIG. 27 . 36 is a partial layout of the bidirectional switching device 41e showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 41e. Cross-sectional views taken along lines AA', BB', CC' in Figure 36 and cross-sections taken along lines AA', BB' and CC' in Figure 24 The views are the same, so reference is made to Figures 25A to 25C. Cross-sectional views taken along lines DD' and EE' in Figure 36 This is shown in Figures 37A and 37B. For simplicity, identical structural elements in Figures 24, 25A to 25D and Figures 36, 37A to 37B are given the same reference numerals and symbols and will not be described in further detail.

參考圖36和圖37A至37B。雙向切換器件41e類似於雙向切換器件31，不同之處在於雙向切換器件41e進一步包括電阻性元件180e。電阻性元件包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 36 and Figures 37A-37B. The bidirectional switching device 41e is similar to the bidirectional switching device 31, except that the bidirectional switching device 41e further includes a resistive element 180e. The resistive element includes a first terminal 181e electrically connected to the substrate 102 to serve as a first terminal of the resistor R1 and a second terminal 182e electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180e可安置在第二鈍化層126上且由與導電跡線142相同的材料製成。第一端181e可通過至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182e可通過至少一個第二導電通孔136和至少一個第二導電跡線146電連接到參考墊。 Resistive element 180e may be disposed on second passivation layer 126 and be made of the same material as conductive trace 142 . The first end 181e may be electrically coupled to the substrate 102 through at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e may be electrically connected to the reference pad through at least one second conductive via 136 and at least one second conductive trace 146 .

雙向切換器件41e的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6G中所顯示的階段處，毯覆式導電層141圖案化以同時形成導電跡線142和電阻性元件180e。 The method of fabricating the bidirectional switching device 41e may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6G, the blanket conductive layer 141 is patterned to simultaneously form conductive traces 142 and Resistive element 180e.

圖38和圖39A至39B顯示基於圖27的電路圖的根據實施例的雙向切換器件41f的結構。圖38為展示可構成雙向切換器件41f中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件41f的部分佈局。沿圖38中的線A-A'、B-B'、C-C'截取的橫截面視圖與沿圖24中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖25A至25C。沿圖38中的線D-D'和E-E'截取的橫截面視圖分別在圖39A和39B中顯示。出於簡潔性，圖24、25A至25D和圖38、39A至39B中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 38 and 39A to 39B show the structure of the bidirectional switching device 41f according to the embodiment based on the circuit diagram of FIG. 27 . 38 is a partial layout of the bidirectional switching device 41f showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 41f. Cross-sectional view taken along lines AA', BB', CC' in Figure 38 and cross-section taken along lines AA', BB' and CC' in Figure 24 The views are the same, so reference is made to Figures 25A to 25C. Cross-sectional views taken along lines DD' and EE' in Figure 38 are shown in Figures 39A and 39B, respectively. For simplicity, identical structural elements in Figures 24, 25A to 25D and Figures 38, 39A to 39B are given the same reference numerals and symbols and will not be described in further detail.

參考圖38和圖39A至39B。雙向切換器件41f類似於雙向切換器件31，不同之處在於雙向切換器件41f進一步包括電阻性元件180f。電阻性元件包 括：第一端181f，其電連接到基板102以充當電阻器R1的第一端子；和第二端182f，其電連接到參考墊以充當電阻器R1的第二端子。 Refer to Figure 38 and Figures 39A to 39B. The bidirectional switching device 41f is similar to the bidirectional switching device 31 except that the bidirectional switching device 41f further includes a resistive element 180f. Resistive component package Includes: a first terminal 181f electrically connected to the substrate 102 to serve as a first terminal of the resistor R1; and a second terminal 182f electrically connected to the reference pad to serve as a second terminal of the resistor R1.

電阻性元件180f可安置在第三鈍化層128上且由與導電跡線146相同的材料製成。第一端181f可通過至少一個TGV 162電耦合到基板102。第二端182f可電連接到參考墊。 Resistive element 18Of may be disposed on third passivation layer 128 and made of the same material as conductive trace 146 . The first end 181f may be electrically coupled to the substrate 102 through at least one TGV 162. The second end 182f can be electrically connected to the reference pad.

雙向切換器件41f的製造方法可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6J中所顯示的階段處，毯覆式導電層145圖案化以同時形成導電跡線146和電阻性元件180f。 The method of fabricating the bidirectional switching device 41f may include the stages shown in Figures 6A through 6K, except that at the stage shown in Figure 6J, the blanket conductive layer 145 is patterned to simultaneously form conductive traces 146 and Resistive element 180f.

圖40為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件5的電路框圖。 Figure 40 is a circuit block diagram of a bidirectional switching device 5 with substrate potential management capabilities according to some embodiments of the present invention.

如圖40中所示，雙向切換器件5具有控制節點CTRL、第一電力/負載節點P/L1和第二電力/負載節點P/L2，和主基板。 As shown in FIG. 40, the bidirectional switching device 5 has a control node CTRL, a first power/load node P/L1 and a second power/load node P/L2, and a main substrate.

雙向切換器件5可在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下操作，且可在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下操作。 The bidirectional switching device 5 may operate in a first mode of operation in which the first power/load node is biased at a voltage VH higher than the voltage VL applied to the second power/load node, and may operate in a second mode of operation. mode (in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node).

雙向切換器件5可包括：氮化物基雙側電晶體Qm；和基板電位管理電路，其配置成用於管理雙向切換器件5的主基板的電位。 The bidirectional switching device 5 may include: a nitride-based double-sided transistor Q m ; and a substrate potential management circuit configured to manage the potential of the main substrate of the bidirectional switching device 5 .

雙側電晶體Qm可具有電連接到控制節點的主閘極端子Gm、電連接到第一電力/負載節點的第一源極/汲極端子S/D1、電連接到第二電力/負載節點的第二源極/汲極端子S/D2，和電連接到主基板的主基板端子SUB。 The double-sided transistor Q m may have a main gate terminal G m electrically connected to the control node, a first source/drain terminal S/D1 electrically connected to the first power/load node, a second power/drain terminal S/D1 electrically connected to the second power/load node The second source/drain terminal S/D2 of the load node, and the main substrate terminal SUB are electrically connected to the main substrate.

基板電位管理電路可包括第一電位穩定元件F1，所述第一電位穩定元件F1具有電連接到控制節點的控制端子、電連接到第一電力/負載節點的第一傳導端子、電連接到主基板的第二傳導端子和電連接到主基板的基板端子。 The substrate potential management circuit may include a first potential stabilizing element F1 having a control terminal electrically connected to the control node, a first conductive terminal electrically connected to the first power/load node, a main The second conductive terminal of the substrate is electrically connected to the substrate terminal of the main substrate.

基板電位管理電路可進一步包括第二電位穩定元件F2，所述第二電位穩定元件F2具有電連接到控制節點的控制端子、電連接到第二電力/負載節點的第一傳導端子、電連接到主基板的第二傳導端子和電連接到主基板的基板端子。 The substrate potential management circuit may further include a second potential stabilizing element F2 having a control terminal electrically connected to the control node, a first conductive terminal electrically connected to the second power/load node, A second conductive terminal of the main substrate and a substrate terminal electrically connected to the main substrate.

基板電位管理電路可進一步包括第三電位穩定元件F3，所述第三電位穩定元件F3具有連接到主基板的第一傳導端子和連接到控制節點的第二傳導端子。 The substrate potential management circuit may further include a third potential stabilizing element F3 having a first conductive terminal connected to the main substrate and a second conductive terminal connected to the control node.

當將高電平電壓施加到控制節點時，第一電位穩定元件F1可具有低於第三電位穩定元件F3的第三電阻的第一電阻，且第二電位穩定元件F2可具有低於第三電阻的第二電阻，使得主基板的電位基本上等於第一和第二電力/負載節點的電位中的較低一個。 When a high-level voltage is applied to the control node, the first potential stabilizing element F1 may have a first resistance lower than the third resistance of the third potential stabilizing element F3, and the second potential stabilizing element F2 may have a lower resistance than the third resistance. The second resistance of the resistor is such that the potential of the main substrate is substantially equal to the lower of the potentials of the first and second power/load nodes.

當將低電平電壓施加到控制節點時，第一電阻可高於第三電阻，且第二電阻可高於第三電阻，使得主基板的電位基本上等於低電平電壓。 When a low-level voltage is applied to the control node, the first resistance may be higher than the third resistance, and the second resistance may be higher than the third resistance, so that the potential of the main substrate is substantially equal to the low-level voltage.

圖41描繪基於圖40的電路框圖的根據一些實施例的雙向切換器件51的電路圖。 Figure 41 depicts a circuit diagram of a bidirectional switching device 51 according to some embodiments based on the circuit block diagram of Figure 40.

參考圖41。第一電位穩定元件F1可包括第一基板耦合電晶體Q1，所述第一基板耦合電晶體Q1具有電連接到控制節點的第一閘極端子G1、電連接到第一電力/負載節點的第一汲極端子D1和電連接到主基板的第一源極端子S1。 Refer to Figure 41. The first potential stabilizing element F1 may include a first substrate coupling transistor Q1 having a first gate terminal G1 electrically connected to the control node, a first gate terminal G1 electrically connected to the first power/load node. A drain terminal D1 and a first source terminal S1 are electrically connected to the main substrate.

第二電位穩定元件F2可包括第二基板耦合電晶體Q2，所述第二基板耦合電晶體Q2具有電連接到控制節點的第二閘極端子G2、電連接到第二電力/負載節點的第二汲極端子D2和電連接到主基板的第二源極端子S2。 The second potential stabilizing element F2 may include a second substrate coupling transistor Q2 having a second gate terminal G2 electrically connected to the control node, a second gate terminal G2 electrically connected to the second power/load node, and a second gate terminal G2 electrically connected to the control node. The two drain terminals D2 and the second source terminal S2 are electrically connected to the main substrate.

第一基板耦合電晶體Q1和第二基板耦合電晶體Q2可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 The first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 may be constructed of various types of transistors, including but not limited to GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction field effect transistor ( JFET) and static sensing transistor (SIT).

第三電位穩定元件F3可為非整流元件，例如電阻器R1，其具有連接到主基板的第一端子和連接到控制節點的第二端子。 The third potential stabilizing element F3 may be a non-rectifying element, such as a resistor R1, having a first terminal connected to the main substrate and a second terminal connected to the control node.

圖42A和42B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件51的操作機構。 Figures 42A and 42B depict the operating mechanism of the bidirectional switching device 51 in a first operating mode in which the first power/load node is biased at a voltage VH higher than the voltage VL applied to the second power/load node. .

參考圖42A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2導通時，電流從控制節點到第二電力/負載節點流過電阻器R1，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)* Rs2,on/(Rs2,on+R)，其中R為電阻器R1的電阻，Rs2,on為Q2的導通電阻。由於Vm,on極小且Rs2,on比R小得多，所以基板的電位Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 42A. When a high level voltage V ON is applied to the control node such that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned on, a current flows from the control node to the second power/load node Through resistor R1, the potential V sub of the substrate is then given by: V sub =V L +(V ON -V L )* R s2,on /(R s2,on +R), where R is the resistance The resistance of device R1, R s2,on is the on-resistance of Q2. Since V m,on is extremely small and R s2,on is much smaller than R, the potential V sub of the substrate is substantially equal to the voltage V L applied to the second power/load node.

參考圖42B。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2截止時，電流從第一電力/負載節點到控制節點流過電阻器R1，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)*R/(R+Rs1,off)，其中Rs1,off為第一基板耦合電晶體Q1的截止電 阻。由於Rs1,off比R大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 42B. When a low level voltage V OFF is applied to the control node such that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned off, a current flows from the first power/load node to the control node Flow through resistor R1, the potential V sub of the substrate is given by: V sub =V OFF +(V H -V OFF )*R/(R+R s1,off ), where R s1,off is the first Off-resistance of substrate coupling transistor Q1. Since R s1,off is much larger than R, the potential V sub of the substrate is essentially equal to the low-level voltage V OFF applied to the control node.

圖42C和42D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件51的操作機構。 Figures 42C and 42D depict the operating mechanism of the bidirectional switching device 51 in a second operating mode in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node. .

參考圖42C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2導通時，電流從控制節點到第一電力/負載節點流過電阻器R1，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)*Rs1,on/(Rs1,on+R)，其中Rs1,on為Q1的導通電阻。由於Vm,on極小且Rs1,on比R小得多，所以基板的電位Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 42C. When a high level voltage V ON is applied to the control node such that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned on, a current flows from the control node to the first power/load node Through resistor R1, the potential V sub of the substrate is then given by: V sub =V L +(V ON -V L )*R s1,on /(R s1,on +R), where R s1, on is the on-resistance of Q1. Since V m,on is extremely small and R s1,on is much smaller than R, the potential V sub of the substrate is substantially equal to the voltage VL applied to the second power/load node.

參考圖42D。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2截止時，電流從第二電力/負載節點到控制節點流過電阻器R1，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)*R/(R+Rs2,off)，其中Rs2,off為第二基板耦合電晶體Q2的截止電阻。由於Rs2,off比R大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 42D. When a low level voltage V OFF is applied to the control node such that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned off, a current flows from the second power/load node to the control node Flow through resistor R1, the potential V sub of the substrate is given by: V sub =V OFF +(V H -V OFF )*R/(R+R s2,off ), where R s2,off is the second Off-resistance of substrate coupling transistor Q2. Since R s2,off is much larger than R, the potential V sub of the substrate is substantially equal to the low-level voltage V OFF applied to the control node.

圖41A的雙向切換器件51可通過將氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1、第二基板耦合電晶體Q2和電阻器R1集成在IC晶片中而形成。 The bidirectional switching device 51 of FIG. 41A may be formed by integrating a nitride-based double-sided transistor Q m , a first substrate coupling transistor Q1 , a second substrate coupling transistor Q2 and a resistor R1 in an IC wafer.

圖43和44A至44E顯示基於圖41A的電路圖的雙向切換器件51a的結構。圖43為展示可構成雙向切換器件51a中的電晶體的部分和電阻器的一些元 件當中的關係的雙向切換器件51a的部分佈局。圖44A至44E為分別沿圖43中的線A-A'、B-B'、C-C'、D-D'和E-E'截取的橫截面視圖。雙向切換器件51a具有類似於雙向切換器件21a的層狀結構的層狀結構。出於簡潔性，相同元件給出相同參考標號和符號，且將不進一步詳細描述。 43 and 44A to 44E show the structure of the bidirectional switching device 51a based on the circuit diagram of FIG. 41A. Figure 43 is a diagram illustrating some elements that may constitute parts of a transistor and a resistor in the bidirectional switching device 51a. A partial layout of the bidirectional switching device 51a in relation among the components. 44A to 44E are cross-sectional views taken along lines AA', BB', CC', DD', and EE' in FIG. 43, respectively. The bidirectional switching device 51a has a layered structure similar to that of the bidirectional switching device 21a. For simplicity, identical elements are given the same reference numbers and symbols and will not be described in further detail.

參考圖43和44A至44E，雙向切換器件51a可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層154、一個或多個鎵穿孔(TGV)162和一個或多個導電墊170，所述導電墊170配置成電連接到外部元件(例如，外部電路)。 Referring to FIGS. 43 and 44A to 44E, the bidirectional switching device 51a may include a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, an S/D electrode 116, a first passivation layer 124. Passivation layer 126, third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more third Two conductive traces 146, protective layer 154, one or more gallium through holes (TGVs) 162, and one or more conductive pads 170 configured to electrically connect to external components (eg, external circuitry).

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1、第二基板耦合電晶體Q2和電阻器R1。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm , first substrate coupling transistor Q1, second substrate coupling transistor Qm Crystal Q2 and resistor R1.

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；和第二電力/負載墊P/L2，其配置成充當第二電力/負載節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; and second power/load pad P/L2 Configured to act as a second power/load node.

參考圖44A。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 Refer to Figure 44A. The S/D electrode 116 may include at least one first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . A source/drain terminal and the drain terminal of the first substrate coupling transistor Q1. The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和第一基板耦合電晶體Q1共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the first substrate coupling transistor Q1 so that the chip size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the first source/drain terminal of the nitride-based two-sided transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

參考圖44B。S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子和第二基板耦合電晶體Q2的汲極端子。第二S/D電極116b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 Refer to Figure 44B. The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . The two source/drain terminals and the drain terminal of the second substrate coupling transistor Q2. The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和第二基板耦合電晶體Q2共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第二源極/汲極端子和第二基板耦合電晶體Q2的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the second substrate coupling transistor Q2, so that the die size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the second source/drain terminal of the nitride-based double-sided transistor Qm and the drain terminal of the second substrate coupling transistor Q2.

參考圖44C。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 44C. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm . The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到控制墊且配置成充當第一基板耦合電晶體Q1的閘極端子。第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Gate structure 110 may further include at least one second gate structure 110b electrically connected to the control pad and configured to serve as a gate terminal for first substrate coupling transistor Q1. The second gate structure 110b may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第三閘極結構110c，所述第三閘極結構110c電連接到控制墊且配置成充當第二基板耦合電晶體Q2的閘極端子。第三閘極結構110c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Gate structure 110 may further include at least one third gate structure 110c electrically connected to the control pad and configured to serve as a gate terminal for second substrate coupling transistor Q2. The third gate structure 110c may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖44D。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102且配置成充當第一基板耦合電晶體Q1的源極端子。第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。 Refer to Figure 44D. S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to substrate 102 and configured to serve as the source terminal of first substrate coupling transistor Q1. The third S/D electrode 116c may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

S/D電極116可進一步包含至少一個第四S/D電極116d，所述第四S/D電極116d電連接到基板且配置成充當第二基板耦合電晶體Q2的源極端子。第四S/D電極116d可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。 The S/D electrode 116 may further include at least one fourth S/D electrode 116d electrically connected to the substrate and configured to serve as the source terminal of the second substrate coupling transistor Q2. The fourth S/D electrode 116d may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三S/D電極116c鄰近於第一S/D電極116a，且第二閘極結構110b在第一S/D電極116a與第三S/D電極116c之間。 Preferably, the third S/D electrode 116c is adjacent to the first S/D electrode 116a, and the second gate structure 110b is between the first S/D electrode 116a and the third S/D electrode 116c.

優選地，第四S/D電極116d鄰近於第二S/D電極116b，且第三閘極結構110c在第四S/D電極116d與第二S/D電極116b之間。參考圖43和圖44E。雙向切換器件51a可進一步包括電阻性元件180a。電阻性元件180a包括：第一端181a，其電連接到基板102以充當電阻器R1的第一端子；和第二端182a，其電連接到控制墊以充當電阻器R1的第二端子。 Preferably, the fourth S/D electrode 116d is adjacent to the second S/D electrode 116b, and the third gate structure 110c is between the fourth S/D electrode 116d and the second S/D electrode 116b. Refer to Figure 43 and Figure 44E. The bidirectional switching device 51a may further include a resistive element 180a. Resistive element 180a includes a first end 181a electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second end 182a electrically connected to a control pad to serve as a second terminal of resistor R1.

電阻性元件180a可安置在鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區的同一層處。第一端181a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 The resistive element 180a may be disposed at the same layer of the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a can be electrically connected through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162 coupled to substrate 102. The second end 182a may be electrically connected through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146 to the control pad.

雙向切換器件51a的製造方法類似於雙向切換器件21a的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6A和圖6B中所顯示的階段之間，鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區通過離子注入圖案化以形成電阻性元件180a。 The manufacturing method of the bidirectional switching device 51a is similar to the manufacturing method of the bidirectional switching device 21a and thus may include the stages shown in Figures 6A to 6K, except that between the stages shown in Figures 6A and 6B, adjacent The 2DEG region of the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 is patterned by ion implantation to form the resistive element 180a.

圖45和圖46顯示基於圖41A的電路圖的根據另一實施例的雙向切換器件51b的結構。圖45為展示可構成雙向切換器件51b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件51b的部分佈局。沿圖45中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖43中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖44A至44D。沿圖45中的線E-E'截取的橫截面視圖在圖46中顯示。出於簡潔性，圖43、44A至44E和圖45、46中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 45 and 46 show the structure of the bidirectional switching device 51b according to another embodiment based on the circuit diagram of FIG. 41A. Figure 45 is a partial layout of a bidirectional switching device 51b showing the relationship among some elements that may constitute part of a transistor and a resistor in the bidirectional switching device 51b. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 45 are the same as those taken along lines AA', BB' and C-C in Figure 43 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 44A to 44D. A cross-sectional view taken along line EE' in Figure 45 is shown in Figure 46. For simplicity, identical structural elements in Figures 43, 44A to 44E and Figures 45, 46 are given the same reference numerals and symbols and will not be described in further detail.

參考圖45和圖46。雙向切換器件51b包括電阻性元件180b。電阻性元件180b包括：第一端181b，其電連接到基板102以充當電阻器R1的第一端子；和第二端182b，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 45 and Figure 46. Bidirectional switching device 51b includes resistive element 180b. Resistive element 180b includes a first terminal 181b electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182b electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件51b類似於雙向切換器件51a，不同之處在於電阻性元件180b安置在第二氮化物基半導體層106上且由與閘極結構110相同的材料製成。第一端181b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 51b is similar to bidirectional switching device 51a, except that resistive element 180b is disposed on second nitride-based semiconductor layer 106 and is made of the same material as gate structure 110. The first end 181 b may be electrically coupled to the substrate 102 through at least one first conductive via 132 , at least one first conductive trace 142 , at least one conductive via 136 , at least one conductive trace 146 , and at least one TGV 162 . The second end 182b may be electrically connected to the control pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件51b的製造方法類似於雙向切換器件21b的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6C中所顯示的階段處，毯覆式半導體層111和毯覆式閘電極層113圖案化以同時形成閘極結構110和電阻性元件180b。 The fabrication method of the bidirectional switching device 51b is similar to the fabrication method of the bidirectional switching device 21b and thus may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6C, the blanket semiconductor layer 111 and the blanket gate electrode layer 113 are patterned to simultaneously form the gate structure 110 and the resistive element 180b.

圖47和圖48顯示基於圖41A的電路圖的根據另一實施例的雙向切換器件51c的結構。圖47為展示可構成雙向切換器件51c中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件51c的部分佈局。沿圖47中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖43中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖44A至44D。沿圖47中的線E-E'截取的橫截面視圖在圖48中顯示。出於簡潔性，圖43、44A至44E和圖47、48中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 47 and 48 show the structure of the bidirectional switching device 51c according to another embodiment based on the circuit diagram of FIG. 41A. Figure 47 is a partial layout of the bidirectional switching device 51c showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 51c. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 47 are the same as those taken along lines AA', BB' and C-C in Figure 43 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 44A to 44D. A cross-sectional view taken along line EE' in Figure 47 is shown in Figure 48. For simplicity, identical structural elements in Figures 43, 44A to 44E and Figures 47, 48 are given the same reference numerals and symbols and will not be described in further detail.

參考圖47和圖48。雙向切換器件51c包括電阻性元件180c。電阻性元件180c包括：第一端181c，其電連接到基板102以充當電阻器R1的第一端子；和第二端182c，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 47 and Figure 48. Bidirectional switching device 51c includes resistive element 180c. Resistive element 180c includes a first end 181c that is electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second end 182c that is electrically connected to the control pad to serve as a second terminal of resistor R1.

雙向切換器件51c類似於雙向切換器件51a，不同之處在於電阻性元件180c可安置在第一鈍化層124上且由與S/D電極116相同的材料製成。第一端 181c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 51 c is similar to bidirectional switching device 51 a except that resistive element 180 c may be disposed on first passivation layer 124 and made of the same material as S/D electrode 116 . first end 181c may be electrically coupled to the substrate 102 through at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182c may be electrically connected to the control pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件51c的製造方法類似於雙向切換器件21c的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6E中所顯示的階段處，毯覆式導電層115圖案化以同時形成S/D電極116和電阻性元件180c。 The manufacturing method of the bidirectional switching device 51c is similar to the manufacturing method of the bidirectional switching device 21c and thus may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6E, the blanket conductive layer 115 is patterned to simultaneously form S/D electrode 116 and resistive element 180c.

圖49和圖50顯示基於圖41A的電路圖的根據另一實施例的雙向切換器件51d的結構。圖49為展示可構成雙向切換器件51d中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件51d的部分佈局。沿圖49中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖43中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖44A至44D。沿圖49中的線E-E'截取的橫截面視圖在圖50中顯示。出於簡潔性，圖43、44A至44E和圖49、50中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 49 and 50 show the structure of the bidirectional switching device 51d according to another embodiment based on the circuit diagram of FIG. 41A. Figure 49 is a partial layout of the bidirectional switching device 51d showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 51d. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 49 are the same as those taken along lines AA', BB' and C-C in Figure 43 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 44A to 44D. A cross-sectional view taken along line EE' in Figure 49 is shown in Figure 50. For simplicity, identical structural elements in Figures 43, 44A to 44E and Figures 49, 50 are given the same reference numerals and symbols and will not be described in further detail.

參考圖49和圖50。雙向切換器件51d包括電阻性元件180d。電阻性元件180d包括：第一端181d，其電連接到基板102以充當電阻器R1的第一端子；和第二端182d，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 49 and Figure 50. Bidirectional switching device 51d includes resistive element 180d. Resistive element 180d includes a first terminal 181d electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182d electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件51d類似於雙向切換器件51a，不同之處在於電阻性元件180d安置在鈍化層126內。鈍化層126拆分成電阻性元件180d下方的下層126a和電阻性元件180d上方的上層126b。換句話說，電阻性元件180d包夾在第一層126a與下層126a和上層126b之間。第一端181d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146 和至少一個TGV 162電耦合到基板102。第二端182e可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 51d is similar to bidirectional switching device 51a except that resistive element 180d is disposed within passivation layer 126. The passivation layer 126 is split into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower and upper layers 126a, 126b. The first end 181d may pass through at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146 and at least one TGV 162 electrically coupled to the substrate 102 . The second end 182e may be electrically connected to the control pad through at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件51d的製造方法類似於雙向切換器件21d的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於下部鈍化層126a沉積在鈍化層124上；毯覆式金屬/金屬化合物層143沉積在鈍化層126a上且圖案化以形成電阻性元件180d；上部鈍化層126b沉積在下部鈍化層126a之上以覆蓋電阻性元件180d；一個或多個第三導電通孔134形成於上部鈍化層126b中以電耦合電阻性元件180d。 The fabrication method of the bidirectional switching device 51d is similar to the fabrication method of the bidirectional switching device 21d, and thus may include the stages shown in Figures 6A to 6K, except that the lower passivation layer 126a is deposited on the passivation layer 124; blanket metal /Metal compound layer 143 is deposited on passivation layer 126a and patterned to form resistive element 180d; upper passivation layer 126b is deposited on lower passivation layer 126a to cover resistive element 180d; one or more third conductive vias 134 Formed in upper passivation layer 126b to electrically couple resistive element 180d.

圖51和圖52顯示基於圖41A的電路圖的根據另一實施例的雙向切換器件51e的結構。圖51為展示可構成雙向切換器件51e中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件51e的部分佈局。沿圖51中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖43中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖43A至43D。沿圖51中的線E-E'截取的橫截面視圖在圖52中顯示。出於簡潔性，圖43、43A至43E和圖51、52中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 51 and 52 show a structure of a bidirectional switching device 51e according to another embodiment based on the circuit diagram of FIG. 41A. 51 is a partial layout of a bidirectional switching device 51e showing the relationship among some elements that may constitute part of a transistor and a resistor in the bidirectional switching device 51e. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 51 are the same as those taken along lines AA', BB' and C-C in Figure 43 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 43A to 43D. A cross-sectional view taken along line EE' in Figure 51 is shown in Figure 52. For simplicity, identical structural elements in Figures 43, 43A to 43E and Figures 51, 52 are given the same reference numerals and symbols and will not be described in further detail.

參考圖51和圖52。雙向切換器件51e包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 51 and Figure 52. Bidirectional switching device 51e includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件51e類似於雙向切換器件51a，不同之處在於電阻性元件180e安置在第二鈍化層126上且由與導電跡線142相同的材料製成。第一端181e可通過至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個 TGV 162電耦合到基板102。第二端182e可通過至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 51e is similar to bidirectional switching device 51a, except that resistive element 180e is disposed on second passivation layer 126 and is made of the same material as conductive traces 142. The first end 181e may pass through at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 is electrically coupled to substrate 102 . The second end 182e may be electrically connected to the control pad through at least one second conductive via 136 and at least one second conductive trace 146 .

雙向切換器件51e的製造方法類似於雙向切換器件21e的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6G中所顯示的階段處，毯覆式導電層141圖案化以同時形成導電跡線142和電阻性元件180e。 The fabrication method of the bidirectional switching device 51e is similar to the fabrication method of the bidirectional switching device 21e and therefore may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6G, the blanket conductive layer 141 is patterned to simultaneously form conductive traces 142 and resistive element 180e.

圖53和圖54顯示基於圖41A的電路圖的根據另一實施例的雙向切換器件51f的結構。圖53為展示可構成雙向切換器件51f中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件51f的部分佈局。沿圖53中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖43中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖44A至44D。沿圖53中的線E-E'截取的橫截面視圖在圖54中顯示。出於簡潔性，圖43、44A至44E和圖53、54中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 53 and 54 show a structure of a bidirectional switching device 51f according to another embodiment based on the circuit diagram of FIG. 41A. 53 is a partial layout of the bidirectional switching device 51f showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 51f. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 53 are the same as those taken along lines AA', BB' and C-C in Figure 43 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 44A to 44D. A cross-sectional view taken along line EE' in Figure 53 is shown in Figure 54. For simplicity, identical structural elements in Figures 43, 44A to 44E and Figures 53, 54 are given the same reference numerals and symbols and will not be described in further detail.

參考圖53和圖54。雙向切換器件51f包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 53 and Figure 54. Bidirectional switching device 51f includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件51f類似於雙向切換器件51a，不同之處在於電阻性元件180f可安置在第三鈍化層128上且由與導電跡線146相同的材料製成。第一端181f可通過至少一個TGV 162電耦合到基板102。第二端182f可電連接到控制墊。 Bidirectional switching device 51 f is similar to bidirectional switching device 51 a except that resistive element 180 f may be disposed on third passivation layer 128 and made of the same material as conductive traces 146 . The first end 181f may be electrically coupled to the substrate 102 through at least one TGV 162. The second end 182f can be electrically connected to the control pad.

雙向切換器件51f的製造方法類似於雙向切換器件21f的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6J中所顯示的階段處，毯覆式導電層145圖案化以同時形成導電跡線146和電阻性元件180f。 The fabrication method of the bidirectional switching device 51f is similar to the fabrication method of the bidirectional switching device 21f and thus may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6J, the blanket conductive layer 145 is patterned to simultaneously form conductive traces 146 and resistive elements 18Of.

圖55A描繪基於圖40的電路框圖的根據一些實施例的雙向切換器件52的電路圖。 Figure 55A depicts a circuit diagram of a bidirectional switching device 52 according to some embodiments based on the circuit block diagram of Figure 40.

參考圖55A。第一電位穩定元件F1可包括第一基板耦合電晶體Q1，所述第一基板耦合電晶體Q1具有電連接到控制節點的第一閘極端子G1、電連接到第一電力/負載節點的第一汲極端子D1和電連接到主基板的第一源極端子S1。 Refer to Figure 55A. The first potential stabilizing element F1 may include a first substrate coupling transistor Q1 having a first gate terminal G1 electrically connected to the control node, a first gate terminal G1 electrically connected to the first power/load node. A drain terminal D1 and a first source terminal S1 are electrically connected to the main substrate.

第二電位穩定元件F2可包括第二基板耦合電晶體Q2，所述第二基板耦合電晶體Q2具有電連接到控制節點的第二閘極端子G2、電連接到第二電力/負載節點的第二汲極端子D2和電連接到主基板的第二源極端子S2。 The second potential stabilizing element F2 may include a second substrate coupling transistor Q2 having a second gate terminal G2 electrically connected to the control node, a second gate terminal G2 electrically connected to the second power/load node, and a second gate terminal G2 electrically connected to the control node. The two drain terminals D2 and the second source terminal S2 are electrically connected to the main substrate.

第一基板耦合電晶體Q1和第二基板耦合電晶體Q2可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 The first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 may be constructed of various types of transistors, including but not limited to GaN HEMT, Si MOSFET, insulated gate bipolar transistor (IGBT), junction field effect transistor ( JFET) and static sensing transistor (SIT).

第三電位穩定元件F3可為整流元件，例如二極體D1，其具有連接到主基板的正極端子和連接到控制節點的負極端子。 The third potential stabilizing element F3 may be a rectifying element such as a diode D1 having a positive terminal connected to the main substrate and a negative terminal connected to the control node.

參考圖55B。二極體D1可由整流電晶體Q3替換以形成雙向切換器件53。整流電晶體Q3可具有均連接到主基板的閘極端子G3和源極端子S3和連接到控制節點的汲極端子D3。 Refer to Figure 55B. Diode D1 may be replaced by rectifier transistor Q3 to form bidirectional switching device 53. Rectifying transistor Q3 may have a gate terminal G3 and a source terminal S3 both connected to the main substrate and a drain terminal D3 connected to the control node.

圖56A至56B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件52的操作機構。 56A-56B depict the operating mechanism of the bidirectional switching device 52 in a first mode of operation in which the first power/load node is biased at a voltage VH that is higher than the voltage VL applied to the second power/load node. .

參考圖56A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2導通時，二極體D1在 電流從控制節點到第二電力/負載節點流過二極體D1時反向偏置，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)* Rs2,on/(Rs2,on+RRV)，其中RRV為二極體D1的反向電阻，且Rs2,on為Q2的導通電阻。由於Rs2,on比RRV小得多，所以基板的電位Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 56A. When the high-level voltage V ON is applied to the control node so that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned on, the diode D1 conducts the current from the control node to the second substrate coupling transistor Q m . With the second power/load node flowing through diode D1 reverse biased, the potential V sub of the substrate is then given by: V sub =V L +(V ON -V L )* R s2,on /(R s2,on +R RV ), where R RV is the reverse resistance of diode D1, and R s2,on is the on-resistance of Q2. Since R s2,on is much smaller than R RV , the potential V sub of the substrate is substantially equal to the voltage V L applied to the second power/load node.

參考圖56B。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2截止時，二極體D1在電流從第一電力/負載節點到控制節點流過二極體D1時正向偏置，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)* RFW/(RFW+Rs1,off)，其中Rs1,off為第一基板耦合電晶體Q1的截止電阻。由於Rs1,off比RFW大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 56B. When the low-level voltage V OFF is applied to the control node so that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned off, the diode D1 changes the current from the first power/ When diode D1 flows from the load node to the control node and is forward biased, the potential V sub of the substrate is given by: V sub =V OFF +(V H -V OFF )* R FW /(R FW +R s1,off ), where R s1,off is the off-resistance of the first substrate coupling transistor Q1. Since R s1,off is much larger than R FW , the potential V sub of the substrate is substantially equal to the low-level voltage V OFF applied to the control node.

圖56C和56D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件52的操作機構。 Figures 56C and 56D depict the operating mechanism of the bidirectional switching device 52 in a second operating mode in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node. .

參考圖56C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2導通時，二極體D1在電流從控制節點到第一電力/負載節點流過二極體D1時反向偏置，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)* Rs1,on/(Rs1,on+RRV)，其中Rs1,on為Q1的導通電阻。由於Rs1,on比RRV小得多，所以基板的電位Vsub基本上等於施加到第一電力/負載節點的電壓VL。 Refer to Figure 56C. When the high-level voltage V ON is applied to the control node so that the double-sided transistor Q m , the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned on, the diode D1 conducts the current from the control node to the second substrate coupling transistor Q m . With a power/load node flowing through diode D1 reverse biased, the potential V sub of the substrate is then given by: V sub =V L +(V ON -V L )* R s1,on /(R s1,on +R RV ), where R s1,on is the on-resistance of Q1. Since R s1,on is much smaller than R RV , the potential V sub of the substrate is substantially equal to the voltage V L applied to the first power/load node.

參考圖56D。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm、第一基板耦合電晶體Q1和第二基板耦合電晶體Q2截止時，二極體D1在電流從第二電力/負載節點到控制節點流過二極體D1時正向偏置，基板的電位 Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)*RFW/(RFW+Rs2,off)，其中Rs2,off為第二基板耦合電晶體Q2的截止電阻。由於Rs2,off比RFW大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 56D. When the low-level voltage V OFF is applied to the control node so that the double-sided transistor Qm, the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 are turned off, the diode D1 switches off the current from the second power/load Node to control node forward biased when flowing through diode D1, the potential V sub of the substrate is given by: V sub =V OFF +(V H -V OFF )*R FW /(R FW +R s2 , off ), where R s2,off is the off-resistance of the second substrate coupling transistor Q2. Since R s2,off is much larger than R FW , the potential V sub of the substrate is substantially equal to the low-level voltage V OFF applied to the control node.

雙向切換器件52/53可通過將氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1、第二基板耦合電晶體Q2和二極體D1/整流電晶體Q3集成在IC晶片中而形成。 The bidirectional switching device 52/53 can be formed by integrating the nitride-based double-sided transistor Qm , the first substrate coupling transistor Q1, the second substrate coupling transistor Q2, and the diode D1/rectifier transistor Q3 in an IC chip. form.

圖57和58A至58D顯示雙向切換器件52/53的結構。圖57為展示可構成雙向切換器件52/53中的電晶體的部分的一些元件當中的關係的雙向切換器件52/53的部分佈局。圖58A至58D為分別沿圖57中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。出於簡潔性，相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 Figures 57 and 58A to 58D show the structure of the bidirectional switching device 52/53. Figure 57 is a partial layout of a bidirectional switching device 52/53 showing the relationship among some of the elements that may form part of the transistor in the bidirectional switching device 52/53. 58A to 58D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 57, respectively. For the sake of simplicity, identical structural elements are given the same reference numerals and symbols and will not be described in further detail.

參考圖57和58A至58D、雙向切換器件52/53可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層154和一個或多個鎵穿孔(TGV)162和導電墊170。 57 and 58A to 58D, the bidirectional switching device 52/53 may include a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, an S/D electrode 116, a first Passivation layer 124, passivation layer 126, third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more a second conductive trace 146, a protective layer 154 and one or more gallium vias (TGVs) 162 and conductive pads 170.

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；和第二電力/負載墊P/L2，其配置成充當第二電力/負載節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; and second power/load pad P/L2 Configured to act as a second power/load node.

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1、第二基板耦合電晶體Q2和二極體D1/整流電晶體Q3。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm , first substrate coupling transistor Q1, second substrate coupling transistor Qm Crystal Q2 and diode D1/rectifier transistor Q3.

參考圖58A。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 Refer to Figure 58A. The S/D electrode 116 may include at least one first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . A source/drain terminal and the drain terminal of the first substrate coupling transistor Q1. The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和第一基板耦合電晶體Q1共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the first substrate coupling transistor Q1, so that the chip size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the first source/drain terminal of the nitride-based two-sided transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

參考圖58B。S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子和第二基板耦合電晶體Q2的汲極端子。第二S/D電極116b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 Refer to Figure 58B. The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . The two source/drain terminals and the drain terminal of the second substrate coupling transistor Q2. The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和第二基板耦合電晶體Q2共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第二源極/汲極端子和第二基板耦合電晶體Q2的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the second substrate coupling transistor Q2, so that the die size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the second source/drain terminal of the nitride-based double-sided transistor Qm and the drain terminal of the second substrate coupling transistor Q2.

參考圖58C。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 58C. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm . The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到控制墊且配置成充當第一基板耦合電晶體Q1的閘極端子。第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Gate structure 110 may further include at least one second gate structure 110b electrically connected to the control pad and configured to serve as a gate terminal for first substrate coupling transistor Q1. The second gate structure 110b may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第三閘極結構110c，所述第三閘極結構110c電連接到控制墊且配置成充當第二基板耦合電晶體Q2的閘極端子。第三閘極結構110c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Gate structure 110 may further include at least one third gate structure 110c electrically connected to the control pad and configured to serve as a gate terminal for second substrate coupling transistor Q2. The third gate structure 110c may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

S/D電極116可包含至少一個第五S/D電極116e，所述第五S/D電極116e電連接到控制墊且配置成充當整流電晶體Q3的汲極端子(或二極體D1的負極端子)。第五S/D電極116e可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 S/D electrode 116 may include at least one fifth S/D electrode 116e electrically connected to the control pad and configured to serve as the drain terminal of rectifier transistor Q3 (or of diode D1 negative terminal). The fifth S/D electrode 116e may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖58D。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102且配置成充當第一基板耦合電晶體Q1的源極端子和整流電晶體Q3的源極端子。第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。 Refer to Figure 58D. The S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to the substrate 102 and configured to serve as a source terminal and a rectifying transistor for the first substrate coupling transistor Q1 Source terminal of Q3. The third S/D electrode 116c may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

S/D電極116可包含至少一個第四S/D電極116d，所述第四S/D電極116d電連接到基板且配置成充當第二基板耦合電晶體Q2的源極端子。第四S/D電極116d可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。 The S/D electrode 116 may include at least one fourth S/D electrode 116d electrically connected to the substrate and configured to serve as the source terminal of the second substrate coupling transistor Q2. The fourth S/D electrode 116d may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

閘極結構110可進一步包含至少一個第四閘極結構110d，所述第四閘極結構110d電連接到基板且配置成充當整流電晶體Q3的閘極端子。第四閘極結構110d可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電跡線146和至少一個TGV 162連接到基板。 Gate structure 110 may further include at least one fourth gate structure 110d electrically connected to the substrate and configured to serve as a gate terminal of rectifier transistor Q3. The fourth gate structure 110d may be connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive trace 146, and at least one TGV 162.

換句話說，第三S/D電極116c和第四閘極結構110d可電短路以形成二極體D1的正極端子。 In other words, the third S/D electrode 116c and the fourth gate structure 110d may be electrically shorted to form the positive terminal of diode D1.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三閘極結構110c鄰近於第一S/D電極116a，且第二閘極結構110b在第一S/D電極116a與第三閘極結構110c之間。 Preferably, the third gate structure 110c is adjacent to the first S/D electrode 116a, and the second gate structure 110b is between the first S/D electrode 116a and the third gate structure 110c.

第四閘極結構110d鄰近於第二S/D電極116b，且第三閘極結構110c在第四閘極結構110d與第二S/D電極116b之間。 The fourth gate structure 110d is adjacent to the second S/D electrode 116b, and the third gate structure 110c is between the fourth gate structure 110d and the second S/D electrode 116b.

第三S/D電極116c鄰近於第五S/D電極116e，且第四閘極結構110d在第五S/D電極116e與第三S/D電極116c之間。 The third S/D electrode 116c is adjacent to the fifth S/D electrode 116e, and the fourth gate structure 110d is between the fifth S/D electrode 116e and the third S/D electrode 116c.

在一些實施例中，整流電晶體Q3可由兩組閘極結構和S/D電極構造。舉例來說，圖59為具有整流電晶體Q3的雙向切換器件52a/53a的部分佈局，所述整流電晶體Q3由兩組閘極結構和S/D電極構造，每一組閘極結構和S/D電極分別鄰近於第一基板耦合電晶體Q1和第二基板耦合電晶體Q2定位。 In some embodiments, rectifier transistor Q3 may be constructed from two sets of gate structures and S/D electrodes. For example, Figure 59 is a partial layout of a bidirectional switching device 52a/53a with a rectifier transistor Q3. The rectifier transistor Q3 is constructed from two sets of gate structures and S/D electrodes, each set of gate structures and S/D electrodes. /D electrodes are positioned adjacent to the first substrate coupling transistor Q1 and the second substrate coupling transistor Q2 respectively.

雙向切換器件52/53的製造方法類似於雙向切換器件11的製造方法，因此可包含在圖6A至6K中所顯示的階段。 The manufacturing method of the bidirectional switching device 52/53 is similar to the manufacturing method of the bidirectional switching device 11 and therefore may be included in the stages shown in Figures 6A to 6K.

圖60為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件6的電路框圖。 Figure 60 is a circuit block diagram of a bidirectional switching device 6 with substrate potential management capabilities according to some embodiments of the present invention.

如圖60中所示，雙向切換器件6具有控制節點CTRL、第一電力/負載節點P/L1和第二電力/負載節點P/L2和主基板。 As shown in FIG. 60 , the bidirectional switching device 6 has a control node CTRL, first and second power/load nodes P/L1 and P/L2 , and a main substrate.

雙向切換器件6包括：氮化物基雙側電晶體Qm；和基板電位管理電路，其配置成用於管理雙向切換器件6的主基板的電位。 The bidirectional switching device 6 includes: a nitride-based double-sided transistor Q m ; and a substrate potential management circuit configured to manage the potential of the main substrate of the bidirectional switching device 6 .

雙側電晶體Qm可具有電連接到控制節點的主閘極端子Gm、電連接到第一電力/負載節點的第一源極/汲極端子S/D1、電連接到第二電力/負載節點的第二源極/汲極端子S/D2，和電連接到主基板的主基板端子SUB。 The double-sided transistor Q m may have a main gate terminal G m electrically connected to the control node, a first source/drain terminal S/D1 electrically connected to the first power/load node, a second power/drain terminal S/D1 electrically connected to the second power/load node The second source/drain terminal S/D2 of the load node, and the main substrate terminal SUB are electrically connected to the main substrate.

基板電位管理電路可包括第一電位穩定元件F1，所述第一電位穩定元件F1具有電連接到控制節點的控制端子、電連接到第一電力/負載節點的第一傳導端子、電連接到主基板的第二傳導端子和電連接到主基板的基板端子。 The substrate potential management circuit may include a first potential stabilizing element F1 having a control terminal electrically connected to the control node, a first conductive terminal electrically connected to the first power/load node, a main The second conductive terminal of the substrate is electrically connected to the substrate terminal of the main substrate.

基板電位管理電路可進一步包括第二電位穩定元件F2，所述第二電位穩定元件F2具有連接到主基板的第一傳導端子和連接到控制節點的第二傳導端子。 The substrate potential management circuit may further include a second potential stabilizing element F2 having a first conductive terminal connected to the main substrate and a second conductive terminal connected to the control node.

當將高電平電壓施加到控制節點時，第一電位穩定元件F1可具有低於第二電位穩定元件F2的第二電阻的第一電阻，使得主基板的電位基本上等於第一和第二電力/負載節點的電位中的較低一個。 When a high-level voltage is applied to the control node, the first potential stabilizing element F1 may have a first resistance lower than the second resistance of the second potential stabilizing element F2 so that the potential of the main substrate is substantially equal to the first and second resistances. The lower of the potentials of the power/load node.

當將低電平電壓施加到控制節點時，第一電阻可高於第二電阻，使得主基板的電位基本上等於低電平電壓。 When a low-level voltage is applied to the control node, the first resistance may be higher than the second resistance so that the potential of the main substrate is substantially equal to the low-level voltage.

圖61描繪基於圖50的電路框圖的根據一些實施例的雙向切換器件61的電路圖。 Figure 61 depicts a circuit diagram of a bidirectional switching device 61 according to some embodiments based on the circuit block diagram of Figure 50.

參考圖61。第一電位穩定元件F1可包括第一基板耦合電晶體Q1，所述第一基板耦合電晶體Q1具有電連接到控制節點的第一閘極端子G1、電連接到第一電力/負載節點的第一汲極端子D1和電連接到主基板的第一源極端子S1。 Refer to Figure 61. The first potential stabilizing element F1 may include a first substrate coupling transistor Q1 having a first gate terminal G1 electrically connected to the control node, a first gate terminal G1 electrically connected to the first power/load node. A drain terminal D1 and a first source terminal S1 are electrically connected to the main substrate.

第一基板耦合電晶體Q1可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 The first substrate coupling transistor Q1 may be constructed from various types of transistors, including but not limited to GaN HEMTs, Si MOSFETs, insulated gate bipolar transistors (IGBTs), junction field effect transistors (JFETs), and static sensing transistors ( SIT).

第二電位穩定元件F2可為非整流元件，例如電阻器R1，其具有連接到主基板的第一端子和連接到控制節點的第二端子。 The second potential stabilizing element F2 may be a non-rectifying element such as a resistor R1 having a first terminal connected to the main substrate and a second terminal connected to the control node.

圖62A和62B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件61的操作機構。 62A and 62B depict the operating mechanism of the bidirectional switching device 61 in a first operating mode in which the first power/load node is biased at a voltage VH higher than the voltage VL applied to the second power/load node. .

參考圖62A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1導通時，電流從控制節點到第二電力/負載節點流過電阻器R1，基板的電位Vsub接著通過下式給出：Vsub=VL+Vm,on+(VON-VL-Vm,on)*Rs1,on/(Rs1,on+R)，其中R為電阻器R1的電阻，Rs1,on為第一基板耦合電晶體Q1的導通電阻，Vm,on為雙側電晶體Qm在其導通時的汲極-源極電壓。由於Rs1,on比R小得多且Vm,on極小，所以Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 62A. When a high level voltage V ON is applied to the control node so that the double-sided transistor Q m and the first substrate coupling transistor Q1 are turned on, current flows from the control node to the second power/load node through the resistor R1, the substrate's The potential V sub is then given by: V sub =V L +V m,on +(V ON -V L -V m,on )*R s1,on /(R s1,on +R), where R is the resistance of the resistor R1, R s1,on is the on-resistance of the first substrate coupling transistor Q1, and V m,on is the drain-source voltage of the double-sided transistor Q m when it is turned on. Since R s1,on is much smaller than R and V m,on is extremely small, V sub is essentially equal to the voltage V L applied to the second power/load node.

參考圖62B。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1截止時，電流從第一電力/負載節點到控制節點流過電阻器R1，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)*R/(R+Rs1,off)，其中Rs1,off為第一基板耦合電晶體Q1的截止電阻。由於Rs1,off比R大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 62B. When a low level voltage V OFF is applied to the control node so that the double-sided transistor Qm and the first substrate coupling transistor Q1 are turned off, current flows from the first power/load node to the control node through the resistor R1, the substrate's The potential V sub is given by the following formula: V sub =V OFF +(V H -V OFF )*R/(R+R s1,off ), where R s1,off is the cut-off resistance of the first substrate coupling transistor Q1 . Since R s1,off is much larger than R, the potential V sub of the substrate is essentially equal to the low-level voltage V OFF applied to the control node.

圖62C和62D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件61的操作機構。 Figures 62C and 62D depict the operating mechanism of bidirectional switching device 61 in a second operating mode in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node. .

參考圖62C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1導通時，電流從控制節點到第一電力/負載節點流過電阻器R1，基板的電位Vsub通過下式給出：Vsub=VL+(VON-VL)*Rs1,on/(Rs1,on/+R)。由於Rs1,on/比R小得多，所以基板的電位Vsub基本上等於施加到第一電力/負載節點的電壓VL。 Refer to Figure 62C. When the high-level voltage V ON is applied to the control node to turn on the double-sided transistor Q m and the first substrate coupling transistor Q1, current flows from the control node to the first power/load node through the resistor R1, the substrate's The potential V sub is given by: V sub =V L +(V ON -V L )*R s1,on /(R s1,on /+R). Since R s1,on / is much smaller than R, the potential V sub of the substrate is substantially equal to the voltage V L applied to the first power/load node.

參考圖62D。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1截止時，電流從第二電力/負載節點到控制節點流過電阻器R1，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-Vm,off-VOFF)*R/(Rs1,off+R)，其中Vm,off為雙側電晶體Qm在其截止時的汲極-源極電壓。由於Rs1,of比R大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 62D. When the low-level voltage V OFF is applied to the control node so that the double-sided transistor Q m and the first substrate coupling transistor Q1 are turned off, current flows from the second power/load node to the control node through the resistor R1, the substrate's The potential V sub is given by the following formula: V sub =V OFF +(V H -V m,off -V OFF )*R/(R s1,off +R), where V m,off is the double-sided transistor Qm The drain-source voltage at its cut-off time. Since R s1,of is much larger than R, the potential V sub of the substrate is substantially equal to the low-level voltage V OFF applied to the control node.

圖61的雙向切換器件61可通過將氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1和電阻器R1集成在IC晶片中而形成。 The bidirectional switching device 61 of FIG. 61 may be formed by integrating the nitride-based double-sided transistor Q m , the first substrate coupling transistor Q1 and the resistor R1 in an IC wafer.

圖63和64A至64E顯示基於圖61的電路圖的雙向切換器件61a的結構。圖63為展示可構成雙向切換器件61a中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件61a的部分佈局。圖64A至64E為分別沿圖63中的線A-A'、B-B'、C-C'、D-D'和E-E'截取的橫截面視圖。雙向切換器件61a具有類似於雙向切換器件21a的層狀結構的層狀結構。出於簡潔性，相同元件給出相同參考標號和符號，且將不進一步詳細描述。 63 and 64A to 64E show the structure of the bidirectional switching device 61a based on the circuit diagram of FIG. 61. 63 is a partial layout of a bidirectional switching device 61a showing the relationship among some of the elements that may constitute part of a transistor and a resistor in the bidirectional switching device 61a. 64A to 64E are cross-sectional views taken along lines AA', BB', CC', DD', and EE' in FIG. 63, respectively. The bidirectional switching device 61a has a layered structure similar to that of the bidirectional switching device 21a. For simplicity, identical elements are given the same reference numbers and symbols and will not be described in further detail.

參考圖63和64A至64E，雙向切換器件61a可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層154、一個或多個鎵穿孔(TGV)162和一個或多個導電墊170，所述導電墊170配置成電連接到外部元件(例如，外部電路)。 Referring to FIGS. 63 and 64A to 64E, the bidirectional switching device 61a may include a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, an S/D electrode 116, a first passivation layer 124. Passivation layer 126, third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more third Two conductive traces 146, protective layer 154, one or more gallium through holes (TGVs) 162, and one or more conductive pads 170 configured to electrically connect to external components (eg, external circuitry).

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1和電阻器R1。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm , first substrate coupling transistor Q1, and resistor R1.

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；和第二電力/負載墊P/L2，其配置成充當第二電力/負載節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; and second power/load pad P/L2 Configured to act as a second power/load node.

參考圖64A。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 Refer to Figure 64A. The S/D electrode 116 may include at least one first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . A source/drain terminal and the drain terminal of the first substrate coupling transistor Q1. The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖64B。S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子。第二S/D電極116b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 Refer to Figure 64B. The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . Two source/drain terminals. The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖64C。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 64C. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm . The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到控制墊且配置成充當第一基板耦合電晶體Q1的閘極端子。第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Gate structure 110 may further include at least one second gate structure 110b electrically connected to the control pad and configured to serve as a gate terminal for first substrate coupling transistor Q1. The second gate structure 110b may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖64D。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102且配置成充當第一基板耦合電晶體Q1的源極端子。第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。 Refer to Figure 64D. S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to substrate 102 and configured to serve as the source terminal of first substrate coupling transistor Q1. The third S/D electrode 116c may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三S/D電極116c鄰近於第一S/D電極116a，且第二閘極結構110b在第一S/D電極116a與第三S/D電極116c之間。 Preferably, the third S/D electrode 116c is adjacent to the first S/D electrode 116a, and the second gate structure 110b is between the first S/D electrode 116a and the third S/D electrode 116c.

參考圖63和圖64E。雙向切換器件61a可進一步包括電阻性元件180a。電阻性元件180a包括：第一端181a，其電連接到基板102以充當電阻器R1的第一端子；和第二端182a，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 63 and Figure 64E. The bidirectional switching device 61a may further include a resistive element 180a. Resistive element 180a includes a first end 181a electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second end 182a electrically connected to a control pad to serve as a second terminal of resistor R1.

電阻性元件180a可安置在鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區的同一層處。第一端181a 可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 The resistive element 180a may be disposed at the same layer of the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. First end 181a Can be electrically coupled to substrate 102 through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162 . The second end 182a may be electrically connected through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146 to the control pad.

雙向切換器件61a的製造方法類似於雙向切換器件21a的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6A和圖6B中所顯示的階段之間，鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區通過離子注入圖案化以形成電阻性元件180a。 The manufacturing method of the bidirectional switching device 61a is similar to the manufacturing method of the bidirectional switching device 21a and thus may include the stages shown in Figures 6A to 6K, except that between the stages shown in Figures 6A and 6B, adjacent The 2DEG region of the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 is patterned by ion implantation to form the resistive element 180a.

圖65和圖66顯示基於圖61的電路圖的根據另一實施例的雙向切換器件61b的結構。圖65為展示可構成雙向切換器件61b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件61b的部分佈局。沿圖65中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖63中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖64A至64D。沿圖65中的線E-E'截取的橫截面視圖在圖66中顯示。出於簡潔性，圖63、64A至64E和圖65、66中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 65 and 66 show a structure of a bidirectional switching device 61 b according to another embodiment based on the circuit diagram of FIG. 61 . Figure 65 is a partial layout of a bidirectional switching device 61b showing the relationship among some elements that may constitute part of a transistor and a resistor in the bidirectional switching device 61b. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 65 are the same as those taken along lines AA', BB' and C-C in Figure 63 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 64A to 64D. A cross-sectional view taken along line EE' in FIG. 65 is shown in FIG. 66 . For simplicity, identical structural elements in Figures 63, 64A to 64E and Figures 65, 66 are given the same reference numerals and symbols and will not be described in further detail.

參考圖65和圖66。雙向切換器件61b包括電阻性元件180b。電阻性元件180b包括：第一端181b，其電連接到基板102以充當電阻器R1的第一端子；和第二端182b，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 65 and Figure 66. Bidirectional switching device 61b includes resistive element 180b. Resistive element 180b includes a first terminal 181b electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182b electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件61b類似於雙向切換器件61a，不同之處在於電阻性元件180b安置在第二氮化物基半導體層106上且由與閘極結構110相同的材料製成。第一端181b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、 至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 161電耦合到基板102。第二端182b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 61b is similar to bidirectional switching device 61a, except that resistive element 180b is disposed on second nitride-based semiconductor layer 106 and is made of the same material as gate structure 110. The first end 181b may pass through at least one first conductive via 132, at least one first conductive trace 142, At least one conductive via 136 , at least one conductive trace 146 , and at least one TGV 161 are electrically coupled to substrate 102 . The second end 182b may be electrically connected to the control pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件61b的製造方法類似於雙向切換器件21b的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6C中所顯示的階段處，毯覆式半導體層111和毯覆式閘電極層113圖案化以同時形成閘極結構110和電阻性元件180b。 The fabrication method of the bidirectional switching device 61b is similar to the fabrication method of the bidirectional switching device 21b and thus may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6C, the blanket semiconductor layer 111 and the blanket gate electrode layer 113 are patterned to simultaneously form the gate structure 110 and the resistive element 180b.

圖67和圖68顯示基於圖61的電路圖的根據另一實施例的雙向切換器件61b的結構。圖67為展示可構成雙向切換器件61b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件61b的部分佈局。沿圖67中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖63中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖64A至64D。沿圖67中的線E-E'截取的橫截面視圖在圖68中顯示。出於簡潔性，圖63、64A至64E和圖67、68中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 67 and 68 show a structure of a bidirectional switching device 61 b according to another embodiment based on the circuit diagram of FIG. 61 . Figure 67 is a partial layout of a bidirectional switching device 61b showing the relationship among some of the elements that may constitute part of a transistor and a resistor in the bidirectional switching device 61b. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 67 are the same as those taken along lines AA', BB' and C-C in Figure 63 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 64A to 64D. A cross-sectional view taken along line EE' in FIG. 67 is shown in FIG. 68 . For simplicity, identical structural elements in Figures 63, 64A to 64E and Figures 67, 68 are given the same reference numerals and symbols and will not be described in further detail.

參考圖67和圖68。雙向切換器件61c包括電阻性元件180c。電阻性元件180c包括：第一端181c，其電連接到基板102以充當電阻器R1的第一端子；和第二端182c，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 67 and Figure 68. Bidirectional switching device 61c includes resistive element 180c. Resistive element 180c includes a first end 181c that is electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second end 182c that is electrically connected to the control pad to serve as a second terminal of resistor R1.

雙向切換器件61c類似於雙向切換器件61a，不同之處在於電阻性元件180c可安置在第一鈍化層124上且由與S/D電極116相同的材料製成。第一端181c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二 端182c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 61 c is similar to bidirectional switching device 61 a except that resistive element 180 c may be disposed on first passivation layer 124 and made of the same material as S/D electrode 116 . The first end 181c may be electrically coupled to the substrate 102 through at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. second End 182c may be electrically connected to the control pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件61c的製造方法類似於雙向切換器件21c的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6E中所顯示的階段處，毯覆式導電層115圖案化以同時形成S/D電極116和電阻性元件180c。 The manufacturing method of the bidirectional switching device 61c is similar to the manufacturing method of the bidirectional switching device 21c and thus may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6E, the blanket conductive layer 115 is patterned to simultaneously form S/D electrode 116 and resistive element 180c.

圖69和圖70顯示基於圖61的電路圖的根據另一實施例的雙向切換器件61b的結構。圖69為展示可構成雙向切換器件61b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件61b的部分佈局。沿圖69中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖63中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖64A至64D。沿圖69中的線E-E'截取的橫截面視圖在圖70中顯示。出於簡潔性，圖63、64A至64E和圖69、70中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 69 and 70 show the structure of the bidirectional switching device 61 b according to another embodiment based on the circuit diagram of FIG. 61 . Figure 69 is a partial layout of a bidirectional switching device 61b showing the relationship among some elements that may constitute part of a transistor and a resistor in the bidirectional switching device 61b. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 69 are the same as those taken along lines AA', BB' and C-C in Figure 63 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 64A to 64D. A cross-sectional view taken along line EE' in FIG. 69 is shown in FIG. 70 . For simplicity, identical structural elements in Figures 63, 64A to 64E and Figures 69, 70 are given the same reference numerals and symbols and will not be described in further detail.

參考圖69和圖70。雙向切換器件61d包括電阻性元件180d。電阻性元件180d包括：第一端181d，其電連接到基板102以充當電阻器R1的第一端子；和第二端182d，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 69 and Figure 70. Bidirectional switching device 61d includes resistive element 180d. Resistive element 180d includes a first terminal 181d electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182d electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件61d類似於雙向切換器件61a，不同之處在於電阻性元件180d安置在鈍化層126內。鈍化層126拆分成電阻性元件180d下方的下層126a和電阻性元件180d上方的上層126b。換句話說，電阻性元件180d包夾在第一層126a與下層126a和上層126b之間。第一端181d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182e可通過至少一個第三導電通 孔134、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 61d is similar to bidirectional switching device 61a except that resistive element 180d is disposed within passivation layer 126. The passivation layer 126 is split into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower and upper layers 126a, 126b. The first end 181d may be electrically coupled to the substrate 102 through at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second terminal 182e may pass through at least one third conductive path Hole 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146 are electrically connected to the control pad.

雙向切換器件61d的製造方法類似於雙向切換器件21d的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於下部鈍化層126a沉積在鈍化層124上；毯覆式金屬/金屬化合物層143沉積在鈍化層126a上且圖案化以形成電阻性元件180d；上部鈍化層126b沉積在下部鈍化層126a之上以覆蓋電阻性元件180d；一個或多個第三導電通孔134形成於上部鈍化層126b中以電耦合電阻性元件180d。 The fabrication method of the bidirectional switching device 61d is similar to the fabrication method of the bidirectional switching device 21d, and thus may include the stages shown in Figures 6A to 6K, except that the lower passivation layer 126a is deposited on the passivation layer 124; blanket metal /Metal compound layer 143 is deposited on passivation layer 126a and patterned to form resistive element 180d; upper passivation layer 126b is deposited on lower passivation layer 126a to cover resistive element 180d; one or more third conductive vias 134 Formed in upper passivation layer 126b to electrically couple resistive element 180d.

圖71和圖72顯示基於圖61的電路圖的根據另一實施例的雙向切換器件61b的結構。圖71為展示可構成雙向切換器件61b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件61b的部分佈局。沿圖71中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖63中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖64A至64D。沿圖71中的線E-E'截取的橫截面視圖在圖72中顯示。出於簡潔性，圖63、64A至64E和圖71、72中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 71 and 72 show a structure of a bidirectional switching device 61b according to another embodiment based on the circuit diagram of FIG. 61. Figure 71 is a partial layout of a bidirectional switching device 61b showing the relationship among some of the elements that may constitute part of a transistor and a resistor in the bidirectional switching device 61b. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 71 are the same as those taken along lines AA', BB' and C-C in Figure 63 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 64A to 64D. A cross-sectional view taken along line EE' in Figure 71 is shown in Figure 72. For simplicity, identical structural elements in Figures 63, 64A to 64E and Figures 71, 72 are given the same reference numerals and symbols and will not be described in further detail.

參考圖71和圖72。雙向切換器件61e包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 71 and Figure 72. Bidirectional switching device 61e includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件61e類似於雙向切換器件61a，不同之處在於電阻性元件180e安置在第二鈍化層126上且由與導電跡線142相同的材料製成。第一端181e可通過至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個 TGV 162電耦合到基板102。第二端182e可通過至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 61e is similar to bidirectional switching device 61a, except that resistive element 180e is disposed on second passivation layer 126 and is made of the same material as conductive traces 142. The first end 181e may pass through at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 is electrically coupled to substrate 102 . The second end 182e may be electrically connected to the control pad through at least one second conductive via 136 and at least one second conductive trace 146 .

雙向切換器件61e的製造方法類似於雙向切換器件21e的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6G中所顯示的階段處，毯覆式導電層141圖案化以同時形成導電跡線142和電阻性元件180e。 The fabrication method of the bidirectional switching device 61e is similar to the fabrication method of the bidirectional switching device 21e and therefore may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6G, the blanket conductive layer 141 is patterned to simultaneously form conductive traces 142 and resistive element 180e.

圖73和圖74顯示基於圖61的電路圖的根據另一實施例的雙向切換器件61b的結構。圖73為展示可構成雙向切換器件61b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件61b的部分佈局。沿圖73中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖63中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖64A至64D。沿圖73中的線E-E'截取的橫截面視圖在圖74中顯示。出於簡潔性，圖63、64A至64E和圖73、74中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 73 and 74 show the structure of the bidirectional switching device 61b according to another embodiment based on the circuit diagram of FIG. 61. Figure 73 is a partial layout of the bidirectional switching device 61b showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 61b. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 73 are the same as those taken along lines AA', BB' and C-C in Figure 63 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 64A to 64D. A cross-sectional view taken along line EE' in Figure 73 is shown in Figure 74. For simplicity, identical structural elements in Figures 63, 64A to 64E and Figures 73, 74 are given the same reference numerals and symbols and will not be described in further detail.

參考圖73和圖74。雙向切換器件61f包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 73 and Figure 74. Bidirectional switching device 61f includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件61f類似於雙向切換器件61a，不同之處在於電阻性元件180f可安置在第三鈍化層128上且由與導電跡線146相同的材料製成。第一端181f可通過至少一個TGV 162電耦合到基板102。第二端182f可電連接到控制墊。 Bidirectional switching device 61f is similar to bidirectional switching device 61a, except that resistive element 180f may be disposed on third passivation layer 128 and made of the same material as conductive traces 146. The first end 181f may be electrically coupled to the substrate 102 through at least one TGV 162. The second end 182f can be electrically connected to the control pad.

雙向切換器件61f的製造方法類似於雙向切換器件21f的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6J中所顯示的階段處，毯覆式導電層145圖案化以同時形成導電跡線146和電阻性元件180f。 The fabrication method of the bidirectional switching device 61f is similar to the fabrication method of the bidirectional switching device 21f and therefore may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6J, the blanket conductive layer 145 is patterned to simultaneously form conductive traces 146 and resistive elements 18Of.

圖75A描繪基於圖75的電路框圖的根據一些實施例的雙向切換器件62的電路圖。 Figure 75A depicts a circuit diagram of a bidirectional switching device 62 according to some embodiments based on the circuit block diagram of Figure 75.

參考圖75A。第一電位穩定元件F1可包括第一基板耦合電晶體Q1，所述第一基板耦合電晶體Q1具有電連接到控制節點的第一閘極端子G1、電連接到第一電力/負載節點的第一汲極端子D1和電連接到主基板的第一源極端子S1。 Refer to Figure 75A. The first potential stabilizing element F1 may include a first substrate coupling transistor Q1 having a first gate terminal G1 electrically connected to the control node, a first gate terminal G1 electrically connected to the first power/load node. A drain terminal D1 and a first source terminal S1 are electrically connected to the main substrate.

第一基板耦合電晶體Q1可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 The first substrate coupling transistor Q1 may be constructed from various types of transistors, including but not limited to GaN HEMTs, Si MOSFETs, insulated gate bipolar transistors (IGBTs), junction field effect transistors (JFETs), and static sensing transistors ( SIT).

第二電位穩定元件F2可為整流元件，例如二極體D1，其具有連接到主基板的正極端子和連接到控制節點的負極端子。 The second potential stabilizing element F2 may be a rectifying element such as a diode D1 having a positive terminal connected to the main substrate and a negative terminal connected to the control node.

參考圖75B。二極體D1可由整流電晶體Q3替換以形成雙向切換器件63。整流電晶體Q3可具有均連接到主基板的閘極端子G3和源極端子S3和連接到控制節點的汲極端子D3。 Refer to Figure 75B. Diode D1 may be replaced by rectifier transistor Q3 to form bidirectional switching device 63 . Rectifying transistor Q3 may have a gate terminal G3 and a source terminal S3 both connected to the main substrate and a drain terminal D3 connected to the control node.

圖76A和76B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件62的操作機構。 Figures 76A and 76B depict the operating mechanism of bidirectional switching device 62 in a first mode of operation in which the first power/load node is biased at a voltage VH that is higher than the voltage VL applied to the second power/load node. .

參考圖76A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1導通時，二極體D1在電流從控制節點到第二電力/負載節點流過二極體D1時反向偏置，基板的電位Vsub接著通過下式給出：Vsub=VL+Vm,on+(VON-VL-Vm,on)*Rs1,on/(Rs1,on+RRV)，其中RRV為二極體D1的反向電阻，Rs1,on為第一基板耦合電晶體Q1的導通電阻，且Vm,on為雙側電晶體Qm在其導 通時的汲極-源極電壓。由於Vm,on極小且RRV比Rs1,on大得多，所以基板的電位Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 76A. When the high-level voltage V ON is applied to the control node so that the double-sided transistor Q m and the first substrate coupling transistor Q1 are turned on, the diode D1 causes current to flow from the control node to the second power/load node. When the pole body D1 is reverse biased, the potential V sub of the substrate is then given by the following formula: V sub =V L +V m,on +(V ON -V L -V m,on )*R s1,on / (R s1,on +R RV ), where R RV is the reverse resistance of diode D1, R s1,on is the on-resistance of the first substrate coupling transistor Q1, and V m,on is the double-sided transistor Q m ’s drain-source voltage when it is turned on. Since V m,on is extremely small and R RV is much larger than R s1,on , the potential V sub of the substrate is substantially equal to the voltage V L applied to the second power/load node.

參考圖76B。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1截止時，二極體D1在電流從第一電力/負載節點到控制節點流過二極體D1時正向偏置，基板的電位Vsub接著通過下式給出：Vsub=VOFF+(VH-VOFF)*RFW/(RFW+Rs1,off)，其中RFW為二極體D1的正向電阻。由於RFW比Rs1,off小得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 76B. When the low-level voltage V OFF is applied to the control node so that the double-sided transistor Q m and the first substrate coupling transistor Q1 are turned off, the diode D1 passes through the diode D1 from the first power/load node to the control node. When pole body D1 is forward biased, the potential Vsub of the substrate is then given by: Vsub=V OFF +(VH-V OFF )*R FW /(R FW +R s1,off ), where R FW is Forward resistance of diode D1. Since R FW is much smaller than R s1,off , the potential V sub of the substrate is substantially equal to the low-level voltage V OFF applied to the control node.

圖76C和76D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件62的操作機構。 76C and 76D depict the operating mechanism of the bidirectional switching device 62 in a second mode of operation in which the second power/load node is biased at a voltage VH that is higher than the voltage VL applied to the first power/load node. .

參考圖76C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1導通時，二極體D1在電流從控制節點到第一電力/負載節點流過二極體D1時正向偏置，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)*Rs1,on/(Rs1,on+RRV)。由於Rs1,on比RRV小得多，所以基板的電位Vsub基本上等於施加到第一電力/負載節點的電壓VL。 Refer to Figure 76C. When a high level voltage V ON is applied to the control node so that the double-sided transistor Qm and the first substrate coupling transistor Q1 are turned on, the diode D1 causes current to flow through the diode from the control node to the first power/load node. When body D1 is forward biased, the potential Vsub of the substrate is then given by: V sub =V L +(V ON -V L )*R s1,on /(R s1,on +RRV). Since R s1,on is much smaller than R RV , the potential V sub of the substrate is substantially equal to the voltage V L applied to the first power/load node.

參考圖76D。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm和第一基板耦合電晶體Q1截止時，二極體D1在電流從第二電力/負載節點到控制節點流過二極體D1時反向偏置，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-Vm,off-VOFF)* RFW/(Rs1,off+RFW)，其中Vm,off為雙側電晶體Qm在其截止時的汲極-源極電壓。由於Rs1,off比RFW大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 76D. When a low level voltage V OFF is applied to the control node so that the double-sided transistor Qm and the first substrate coupling transistor Q1 are turned off, the diode D1 causes current to flow through the diode from the second power/load node to the control node. When body D1 is reverse biased, the potential V sub of the substrate is given by: V sub =V OFF +(VH-V m,off -V OFF )* R FW /(R s1,off +R FW ), Where V m,off is the drain-source voltage of the double-sided transistor Q m when it is turned off. Since R s1,off is much larger than RFW, the potential V sub of the substrate is essentially equal to the low-level voltage V OFF applied to the control node.

圖77和78A至78D顯示基於圖75A/75B的電路圖的雙向切換器件62/63的結構。圖77為展示可構成雙向切換器件62/63中的電晶體的部分的一些元件當中的關係的雙向切換器件62/63的部分佈局。圖78A至78D為分別沿圖77中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。出於簡潔性，相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 Figures 77 and 78A to 78D show the structure of the bidirectional switching device 62/63 based on the circuit diagram of Figures 75A/75B. Figure 77 is a partial layout of a bidirectional switching device 62/63 showing the relationship among some of the elements that may form part of the transistors in the bidirectional switching device 62/63. 78A to 78D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 77, respectively. For the sake of simplicity, identical structural elements are given the same reference numerals and symbols and will not be described in further detail.

參考圖77和78A至78D，雙向切換器件62/63可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層171和一個或多個鎵穿孔(TGV)162和導電墊170。 Referring to FIGS. 77 and 78A to 78D, the bidirectional switching device 62/63 may include a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, an S/D electrode 116, a first Passivation layer 124, passivation layer 126, third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more a second conductive trace 146, a protective layer 171 and one or more gallium vias (TGV) 162 and conductive pad 170.

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；和第二電力/負載墊P/L2，其配置成充當第二電力/負載節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; and second power/load pad P/L2 Configured to act as a second power/load node.

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm、第一基板耦合電晶體Q1和二極體D1/整流電晶體Q3。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm , first substrate coupling transistor Q1, and diode D1/ Rectifier transistor Q3.

參考圖78A。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 Refer to Figure 78A. The S/D electrode 116 may include at least a first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . A source/drain terminal and the drain terminal of the first substrate coupling transistor Q1. The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和第一基板耦合電晶體Q1共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第一源極/汲極端子和第一基板耦合電晶體Q1的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the first substrate coupling transistor Q1, so that the chip size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the first source/drain terminal of the nitride-based two-sided transistor Qm and the drain terminal of the first substrate coupling transistor Q1.

參考圖78B。S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子。第二S/D電極116b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 Refer to Figure 78B. The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . Two source/drain terminals. The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖78C。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 78C. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm . The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到控制墊且配置成充當第一基板耦合電晶體Q1的閘極端子。第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Gate structure 110 may further include at least one second gate structure 110b electrically connected to the control pad and configured to serve as a gate terminal for first substrate coupling transistor Q1. The second gate structure 110b may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

S/D電極116可進一步包含至少一個第四S/D電極116d，所述第四S/D電極116d電連接到控制墊且配置成充當整流電晶體Q3的汲極端子(或二極體D1的負極端子)。第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 S/D electrode 116 may further include at least one fourth S/D electrode 116d electrically connected to the control pad and configured to serve as the drain terminal (or diode D1 of rectifier transistor Q3 negative terminal). The third S/D electrode 116c may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖78D。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102且配置成充當第一基板耦合電晶體Q1的源極端子和整流電晶體Q3的源極端子。第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。 Refer to Figure 78D. The S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to the substrate 102 and configured to serve as a source terminal and a rectifying transistor for the first substrate coupling transistor Q1 Source terminal of Q3. The third S/D electrode 116c may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

閘極結構110可進一步包含至少一個第三閘極結構110c，所述第三閘極結構110c電連接到基板且配置成充當整流電晶體Q3的閘極端子。第三閘極結構110c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電跡線146和至少一個TGV 162連接到基板。 Gate structure 110 may further include at least one third gate structure 110c electrically connected to the substrate and configured to serve as a gate terminal for rectifier transistor Q3. The third gate structure 110c may be connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive trace 146, and at least one TGV 162.

換句話說，第三S/D電極116c和第三閘極結構110c可電短路以形成二極體D1的正極端子。 In other words, the third S/D electrode 116c and the third gate structure 110c may be electrically shorted to form the positive terminal of diode D1.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三S/D電極116c鄰近於第一S/D電極116a，且第二閘極結構110b在第一S/D電極116a與第三S/D電極116c之間。 Preferably, the third S/D electrode 116c is adjacent to the first S/D electrode 116a, and the second gate structure 110b is between the first S/D electrode 116a and the third S/D electrode 116c.

優選地，第三S/D電極116c鄰近於第四S/D電極116d，且第三閘極結構110c在第四S/D電極116d與第三S/D電極116c之間。 Preferably, the third S/D electrode 116c is adjacent to the fourth S/D electrode 116d, and the third gate structure 110c is between the fourth S/D electrode 116d and the third S/D electrode 116c.

雙向切換器件62/63的製造方法類似於雙向切換器件11的製造方法，因此可包含在圖6A至6K中所顯示的階段。 The manufacturing method of the bidirectional switching device 62/63 is similar to the manufacturing method of the bidirectional switching device 11 and therefore may be included in the stages shown in Figures 6A to 6K.

圖79為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件7的電路框圖。 Figure 79 is a circuit block diagram of a bidirectional switching device 7 with substrate potential management capabilities according to some embodiments of the present invention.

如圖79中所示，雙向切換器件7具有控制節點CTRL、第一電力/負載節點P/L1和第二電力/負載節點P/L2和主基板。 As shown in FIG. 79, the bidirectional switching device 7 has a control node CTRL, first and second power/load nodes P/L1 and P/L2, and a main substrate.

雙向切換器件7可包括：氮化物基雙側電晶體Qm；和基板電位管理電路，其配置成用於管理雙向切換器件7的主基板的電位。 The bidirectional switching device 7 may include: a nitride-based double-sided transistor Q m ; and a substrate potential management circuit configured to manage the potential of the main substrate of the bidirectional switching device 7 .

雙側電晶體Qm可具有電連接到控制節點的主閘極端子Gm、電連接到第一電力/負載節點的第一源極/汲極端子S/D1、電連接到第二電力/負載節點的第二源極/汲極端子S/D2，和電連接到主基板的主基板端子SUB。 The double-sided transistor Q m may have a main gate terminal G m electrically connected to the control node, a first source/drain terminal S/D1 electrically connected to the first power/load node, a second power/drain terminal S/D1 electrically connected to the second power/load node The second source/drain terminal S/D2 of the load node, and the main substrate terminal SUB are electrically connected to the main substrate.

基板電位管理電路可包括第一電位穩定元件F1，所述第一電位穩定元件F1具有電連接到第一電力/負載節點的第一傳導端子和電連接到主基板的第二傳導端子。 The substrate potential management circuit may include a first potential stabilizing element F1 having a first conductive terminal electrically connected to the first power/load node and a second conductive terminal electrically connected to the main substrate.

基板電位管理電路可進一步包括第二電位穩定元件F2，所述第二電位穩定元件F2具有電連接到第二電力/負載節點的第一傳導端子和電連接到主基板的第二傳導端子。 The substrate potential management circuit may further include a second potential stabilizing element F2 having a first conductive terminal electrically connected to the second power/load node and a second conductive terminal electrically connected to the main substrate.

基板電位管理電路可進一步包括第三電位穩定元件F3，所述第三電位穩定元件F3具有連接到主基板的第一傳導端子和連接到控制節點的第二傳導端子。 The substrate potential management circuit may further include a third potential stabilizing element F3 having a first conductive terminal connected to the main substrate and a second conductive terminal connected to the control node.

當將高電平電壓施加到控制節點時，第一電位穩定元件F1可具有低於第三電位穩定元件F3的第三電阻的第一電阻，且第二電位穩定元件F2可具有低於第三電阻的第二電阻，使得主基板的電位基本上等於第一和第二電力/負載節點的電位中的較低一個。 When a high-level voltage is applied to the control node, the first potential stabilizing element F1 may have a first resistance lower than the third resistance of the third potential stabilizing element F3, and the second potential stabilizing element F2 may have a lower resistance than the third resistance. The second resistance of the resistor is such that the potential of the main substrate is substantially equal to the lower of the potentials of the first and second power/load nodes.

當將低電平電壓施加到控制節點時，第一電阻可高於第三電阻，且第二電阻可高於第三電阻，使得主基板的電位基本上等於低電平電壓。 When a low-level voltage is applied to the control node, the first resistance may be higher than the third resistance, and the second resistance may be higher than the third resistance, so that the potential of the main substrate is substantially equal to the low-level voltage.

圖80A描繪基於圖79的電路框圖的根據一些實施例的雙向切換器件71的電路圖。 Figure 80A depicts a circuit diagram of a bidirectional switching device 71 according to some embodiments based on the circuit block diagram of Figure 79.

參考圖80A。第一電位穩定元件F1可包括第一二極體D1，所述第一二極體D1具有電連接到第一電力/負載節點的負極端子和電連接到主基板的正極端子。 Refer to Figure 80A. The first potential stabilizing element F1 may include a first diode D1 having a negative terminal electrically connected to the first power/load node and a positive terminal electrically connected to the main substrate.

第二電位穩定元件F2可包括第二二極體D2，所述第二二極體D2具有電連接到第二電力/負載節點的負極端子和電連接到主基板的正極端子。 The second potential stabilizing element F2 may include a second diode D2 having a negative terminal electrically connected to the second power/load node and a positive terminal electrically connected to the main substrate.

參考圖80B。二極體D1可由整流電晶體Q3替換，且二極體D2可由整流電晶體Q4替換以形成雙向切換器件72。整流電晶體Q3可具有均連接到主基板的閘極端子G3和源極端子S3和連接到控制節點的汲極端子D3。整流電晶體Q4可具有均連接到主基板的閘極端子G4和源極端子S4和連接到控制節點的汲極端子D4。 Refer to Figure 80B. Diode D1 may be replaced by rectifier transistor Q3, and diode D2 may be replaced by rectifier transistor Q4 to form bidirectional switching device 72. Rectifying transistor Q3 may have a gate terminal G3 and a source terminal S3 both connected to the main substrate and a drain terminal D3 connected to the control node. Rectifying transistor Q4 may have a gate terminal G4 and a source terminal S4 both connected to the main substrate and a drain terminal D4 connected to the control node.

電晶體Q3和Q4可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 Transistors Q3 and Q4 may be constructed from various types of transistors, including but not limited to GaN HEMTs, Si MOSFETs, Insulated Gate Bipolar Transistors (IGBTs), Junction Gate Field Effect Transistors (JFETs), and Static Induction Transistors (SITs) .

參考圖80A和80B。第三電位穩定元件F3可為非整流元件，例如電阻器R1，其具有連接到主基板的第一端子和連接到控制節點的第二端子。 Refer to Figures 80A and 80B. The third potential stabilizing element F3 may be a non-rectifying element, such as a resistor R1, having a first terminal connected to the main substrate and a second terminal connected to the control node.

圖81A和81B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件71的操作機構。 81A and 81B depict the operating mechanism of the bidirectional switching device 71 in a first mode of operation in which the first power/load node is biased at a voltage VH higher than the voltage VL applied to the second power/load node. .

參考圖81A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm導通時，電流從控制節點到第二電力/負載節點流過電阻器R1、二極體D1 和二極體D2，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)* RFW2/(RFW2+R)，其中R為電阻器R1的電阻，且RFW2為二極體D2的正向電阻。由於RFW2比R小得多，所以基板的電位Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 81A. When a high level voltage V ON is applied to the control node such that the double-sided transistor Q m is turned on, current flows from the control node to the second power/load node through resistor R1, diode D1 and diode D2, The potential V sub of the substrate is then given by: V sub =V L +(V ON -V L )* R FW2 /(R FW2 +R), where R is the resistance of resistor R1 and R FW2 is two The forward resistance of pole body D2. Since R FW2 is much smaller than R, the potential V sub of the substrate is substantially equal to the voltage V L applied to the second power/load node.

參考圖81B。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm截止時，電流從第一電力/負載節點到控制節點流過二極體D1和電阻器R1，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)*R/(R+RRV1)，其中RRV1為二極體D1的反向電阻。由於RRV1比R大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 81B. When a low-level voltage V OFF is applied to the control node so that the double-sided transistor Q m is turned off, current flows through the diode D1 and the resistor R1 from the first power/load node to the control node, and the potential of the substrate V sub It is given by the following formula: V sub =V OFF +(V H -V OFF )*R/(R+R RV1 ), where R RV1 is the reverse resistance of diode D1. Since R RV1 is much larger than R, the potential V sub of the substrate is substantially equal to the low-level voltage V OFF applied to the control node.

圖81C和81D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件71的操作機構。 81C and 81D depict the operating mechanism of the bidirectional switching device 71 in a second operating mode in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node. .

參考圖81C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm導通時，電流從控制節點到第一電力/負載節點流過電阻器R1、二極體D1和二極體D2，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)* RFW1/(RFW1+R)，其中RFW1為二極體D1的正向電阻。由於RFW1比R小得多，所以基板的電位Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 81C. When a high level voltage V ON is applied to the control node such that the double-sided transistor Q m is turned on, current flows from the control node to the first power/load node through resistor R1, diode D1 and diode D2, The potential V sub of the substrate is then given by: V sub =V L +(V ON -V L )* R FW1 /(R FW1 +R), where R FW1 is the forward resistance of diode D1. Since R FW1 is much smaller than R, the potential V sub of the substrate is substantially equal to the voltage V L applied to the second power/load node.

參考圖81D。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm截止時，電流從第二電力/負載節點到控制節點流過二極體D2和電阻器R1，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)*R/(R+RRV2)，其中RRV2為二極體D2的反向電阻。由於RRV2比R大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 81D. When a low-level voltage V OFF is applied to the control node so that the double-sided transistor Q m is turned off, current flows through the diode D2 and the resistor R1 from the second power/load node to the control node, and the potential of the substrate V sub It is given by the following formula: V sub =V OFF +(V H -V OFF )*R/(R+R RV2 ), where R RV2 is the reverse resistance of diode D2. Since R RV2 is much larger than R, the potential V sub of the substrate is substantially equal to the low-level voltage V OFF applied to the control node.

雙向切換器件72的操作機構類似於雙向切換器件71的操作機構，且因此出於簡潔性將不進一步詳細論述。 The operating mechanism of the bidirectional switching device 72 is similar to that of the bidirectional switching device 71 and therefore will not be discussed in further detail for the sake of brevity.

圖80A/80B的雙向切換器件71/72可通過將氮化物基雙側電晶體Qm、二極體D1/整流電晶體Q3、二極體D2/整流電晶體Q4和電阻器R1集成在IC晶片中而形成。 The bidirectional switching device 71/72 of Figure 80A/80B can be integrated in an IC by integrating the nitride-based double-sided transistor Qm , diode D1/rectifier transistor Q3, diode D2/rectifier transistor Q4 and resistor R1 formed in the wafer.

圖82和83A至83E顯示基於圖80A/80B的電路圖的雙向切換器件71a/72a的結構。圖82為展示可構成雙向切換器件71a/72a中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件71a/72a的部分佈局。圖83A至83E為分別沿圖82中的線A-A'、B-B'、C-C'、D-D'和E-E'截取的橫截面視圖。雙向切換器件71a/72a具有類似於雙向切換器件21a的層狀結構的層狀結構。出於簡潔性，相同元件給出相同參考標號和符號，且將不進一步詳細描述。 82 and 83A to 83E show the structure of the bidirectional switching device 71a/72a based on the circuit diagram of FIGS. 80A/80B. Figure 82 is a partial layout of a bidirectional switching device 71a/72a showing the relationship among some of the elements that may form part of a transistor and a resistor in the bidirectional switching device 71a/72a. 83A to 83E are cross-sectional views taken along lines AA', BB', CC', DD', and EE' in FIG. 82, respectively. The bidirectional switching devices 71a/72a have a layered structure similar to that of the bidirectional switching device 21a. For simplicity, identical elements are given the same reference numbers and symbols and will not be described in further detail.

參考圖82和83A至83E，雙向切換器件71a/72a可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層154、一個或多個鎵穿孔(TGV)162和一個或多個導電墊170，所述導電墊170配置成電連接到外部元件(例如，外部電路)。 Referring to FIGS. 82 and 83A to 83E, the bidirectional switching device 71a/72a may include a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, an S/D electrode 116, a first Passivation layer 124, passivation layer 126, third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more a second conductive trace 146, a protective layer 154, one or more gallium vias (TGV) 162, and one or more conductive pads 170 configured to electrically connect to external components (eg, external circuitry).

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm、二極體D1/整流電晶體Q3、二極體D2/整流電晶體Q4和電阻器R1。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm , diode D1/rectifier transistor Q3, diode D2/rectifier transistor Q4 and resistor R1.

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；和第二電力/負載墊P/L2，其配置成充當第二電力/負載節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; and second power/load pad P/L2 Configured to act as a second power/load node.

參考圖83A。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子和整流電晶體Q3的汲極端子(或二極體D1的負極端子)。第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 Refer to Figure 83A. The S/D electrode 116 may include at least one first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . a source/drain terminal and the drain terminal of rectifier transistor Q3 (or the negative terminal of diode D1). The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和整流電晶體Q3共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第一源極/汲極端子和整流電晶體Q3的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the rectifier transistor Q3, so that the chip size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the first source/drain terminal of nitride-based double-sided transistor Qm and the drain terminal of rectifier transistor Q3.

參考圖83B。S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子和整流電晶體Q4的汲極端子(或二極體D2的負極端子)。第二S/D電極116b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 Refer to Figure 83B. The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . Two source/drain terminals and the drain terminal of rectifier transistor Q4 (or the negative terminal of diode D2). The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

在這一示範性結構中，相同S/D電極由氮化物基雙側電晶體Qm和整流電晶體Q4共用，使得晶片大小可最小化。在一些實施例中，不同S/D電極可用於充當氮化物基雙側電晶體Qm的第二源極/汲極端子和整流電晶體Q4的汲極端子。 In this exemplary structure, the same S/D electrode is shared by the nitride-based double-sided transistor Qm and the rectifier transistor Q4, so that the chip size can be minimized. In some embodiments, different S/D electrodes may be used to serve as the second source/drain terminal of nitride-based double-sided transistor Qm and the drain terminal of rectifier transistor Q4.

參考圖83C。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 83C. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm . The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖83D。閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到基板102且配置成充當整流電晶體Q3的閘極端子。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102且配置成充當整流電晶體Q3的源極端子。換句話說，第二閘極結構110b和第三S/D電極116c可電短路以形成二極體D1的正極端子。 Refer to Figure 83D. Gate structure 110 may further include at least one second gate structure 110b electrically connected to substrate 102 and configured to serve as a gate terminal for rectifier transistor Q3. S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to substrate 102 and configured to serve as a source terminal of rectifier transistor Q3. In other words, the second gate structure 110b and the third S/D electrode 116c may be electrically shorted to form the positive terminal of diode D1.

第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162連接到基板102。 The second gate structure 110b may be connected to the substrate 102 through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板102。 The third S/D electrode 116c may be electrically connected to the substrate 102 through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

閘極結構110可進一步包含至少一個第三閘極結構110c，所述第三閘極結構110c電連接到基板102且配置成充當整流電晶體Q4的閘極端子。S/D電極116可進一步包含至少一個第四S/D電極116d，所述第四S/D電極116d電連接到基板102且配置成充當整流電晶體Q4的源極端子。換句話說，第三閘極結構110c和第四S/D電極116d電短路以形成二極體D2的正極端子。’ Gate structure 110 may further include at least one third gate structure 110c electrically connected to substrate 102 and configured to serve as a gate terminal for rectifier transistor Q4. S/D electrode 116 may further include at least one fourth S/D electrode 116d electrically connected to substrate 102 and configured to serve as the source terminal of rectifier transistor Q4. In other words, the third gate structure 110c and the fourth S/D electrode 116d are electrically shorted to form the positive terminal of diode D2. ’

第三閘極結構110c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 The third gate structure 110c may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

第四S/D電極116d可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。 The fourth S/D electrode 116d may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三S/D電極116c鄰近於第一S/D電極116a，且第二閘極結構110b在第一S/D電極116a與第三S/D電極116c之間。 Preferably, the third S/D electrode 116c is adjacent to the first S/D electrode 116a, and the second gate structure 110b is between the first S/D electrode 116a and the third S/D electrode 116c.

優選地，第二S/D電極116d鄰近於第四S/D電極116d，且第三閘極結構110b在第二S/D電極116b與第四S/D電極116d之間。 Preferably, the second S/D electrode 116d is adjacent to the fourth S/D electrode 116d, and the third gate structure 110b is between the second S/D electrode 116b and the fourth S/D electrode 116d.

參考圖82和圖83E。雙向切換器件71a/72a可進一步包括電阻性元件180a。電阻性元件180a包括：第一端181a，其電連接到基板102以充當電阻器R1的第一端子；和第二端182a，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 82 and Figure 83E. The bidirectional switching device 71a/72a may further include a resistive element 180a. Resistive element 180a includes a first end 181a electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second end 182a electrically connected to a control pad to serve as a second terminal of resistor R1.

電阻性元件180a可安置在鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區的同一層處。第一端181a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 The resistive element 180a may be disposed at the same layer of the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a can be electrically connected through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162 coupled to substrate 102. The second end 182a may be electrically connected through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146 to the control pad.

雙向切換器件71a/72a的製造方法類似於雙向切換器件21a的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6A和圖6B中所顯示的階段之間，鄰近於第一氮化物基半導體層104與第二氮化物基半導體 層106之間的異質結介面的2DEG區通過離子注入圖案化以形成電阻性元件180a。 The fabrication method of the bidirectional switching device 71a/72a is similar to the fabrication method of the bidirectional switching device 21a and thus may include the stages shown in Figures 6A to 6K, except that between the stages shown in Figures 6A and 6B , adjacent to the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 104 The 2DEG region of the heterojunction interface between layers 106 is patterned by ion implantation to form resistive element 180a.

圖84和圖85顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件71b/72b的結構。圖84為展示可構成雙向切換器件71b/72b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件71b/72b的部分佈局。沿圖84中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖82中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖83A至83D。沿圖84中的線E-E'截取的橫截面視圖在圖85中顯示。出於簡潔性，圖82、83A至83E和圖84、85中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 84 and 85 show a structure of a bidirectional switching device 71b/72b according to another embodiment based on the circuit diagram of FIGS. 80A/80B. 84 is a partial layout of a bidirectional switching device 71b/72b showing the relationship among some of the elements that may constitute portions of the transistors and resistors in the bidirectional switching device 71b/72b. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 84 are the same as those taken along lines AA', BB' and C-C in Figure 82 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 83A to 83D. A cross-sectional view taken along line EE' in FIG. 84 is shown in FIG. 85 . For simplicity, identical structural elements in Figures 82, 83A to 83E and Figures 84, 85 are given the same reference numerals and symbols and will not be described in further detail.

參考圖84和圖85。雙向切換器件71b/72b包括電阻性元件180b。電阻性元件180b包括：第一端181b，其電連接到基板102以充當電阻器R1的第一端子；和第二端182b，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 84 and Figure 85. Bidirectional switching device 71b/72b includes resistive element 180b. Resistive element 180b includes a first terminal 181b electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182b electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件71b/72b類似於雙向切換器件71a/72a，不同之處在於電阻性元件180b安置在第二氮化物基半導體層106上且由與閘極結構110相同的材料製成。第一端181b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 71b/72b is similar to bidirectional switching device 71a/72a, except that resistive element 180b is disposed on second nitride-based semiconductor layer 106 and is made of the same material as gate structure 110. The first end 181 b may be electrically coupled to the substrate 102 through at least one first conductive via 132 , at least one first conductive trace 142 , at least one conductive via 136 , at least one conductive trace 146 , and at least one TGV 162 . The second end 182b may be electrically connected to the control pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件71b/72b的製造方法類似於雙向切換器件21b的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6C中所顯 示的階段處，毯覆式半導體層111和毯覆式閘電極層113圖案化以同時形成閘極結構110和電阻性元件180b。 The fabrication method of the bidirectional switching device 71b/72b is similar to the fabrication method of the bidirectional switching device 21b, and thus can include the stages shown in Figures 6A to 6K, except that the steps shown in Figure 6C At the stage shown, the blanket semiconductor layer 111 and the blanket gate electrode layer 113 are patterned to simultaneously form the gate structure 110 and the resistive element 180b.

圖86和圖87顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件71c/72c的結構。圖86為展示可構成雙向切換器件71c/72c中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件71c/72c的部分佈局。沿圖86中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖82中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖83A至83D。沿圖86中的線E-E'截取的橫截面視圖在圖87中顯示。出於簡潔性，圖82、83A至83E和圖86、87中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 86 and 87 show the structure of a bidirectional switching device 71c/72c according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 86 is a partial layout of the bidirectional switching device 71c/72c showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 71c/72c. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 86 are the same as those taken along lines AA', BB' and C-C in Figure 82 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 83A to 83D. A cross-sectional view taken along line EE' in Figure 86 is shown in Figure 87. For simplicity, identical structural elements in Figures 82, 83A to 83E and Figures 86, 87 are given the same reference numerals and symbols and will not be described in further detail.

參考圖86和圖87。雙向切換器件71c/72c包括電阻性元件180c。電阻性元件180c包括：第一端181c，其電連接到基板102以充當電阻器R1的第一端子；和第二端182c，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 86 and Figure 87. Bidirectional switching device 71c/72c includes resistive element 180c. Resistive element 180c includes a first end 181c that is electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second end 182c that is electrically connected to the control pad to serve as a second terminal of resistor R1.

雙向切換器件71c/72c類似於雙向切換器件71a/72a，不同之處在於電阻性元件180c可安置在第一鈍化層124上且由與S/D電極116相同的材料製成。第一端181c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 71c/72c is similar to bidirectional switching device 71a/72a, except that resistive element 180c may be disposed on first passivation layer 124 and made of the same material as S/D electrode 116. The first end 181c may be electrically coupled to the substrate 102 through at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182c may be electrically connected to the control pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件71c/72c的製造方法類似於雙向切換器件21c的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6E中所顯示的階段處，毯覆式導電層115圖案化以同時形成S/D電極116和電阻性元件180c。 The fabrication method of the bidirectional switching device 71c/72c is similar to the fabrication method of the bidirectional switching device 21c, and therefore can include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6E, the blanket Conductive layer 115 is patterned to simultaneously form S/D electrode 116 and resistive element 180c.

圖88和圖89顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件71d/72d的結構。圖88為展示可構成雙向切換器件71d/72d中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件71d/72d的部分佈局。沿圖88中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖82中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖83A至83D。沿圖88中的線E-E'截取的橫截面視圖在圖89中顯示。出於簡潔性，圖82、83A至83E和圖88、89中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 88 and 89 show a structure of a bidirectional switching device 71d/72d according to another embodiment based on the circuit diagram of FIGS. 80A/80B. 88 is a partial layout of the bidirectional switching device 71d/72d showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 71d/72d. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 88 are the same as those taken along lines AA', BB' and C-C in Figure 82 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 83A to 83D. A cross-sectional view taken along line EE' in Figure 88 is shown in Figure 89. For simplicity, identical structural elements in Figures 82, 83A to 83E and Figures 88, 89 are given the same reference numerals and symbols and will not be described in further detail.

參考圖88和圖89。雙向切換器件71d/72d包括電阻性元件180d。電阻性元件180d包括：第一端181d，其電連接到基板102以充當電阻器R1的第一端子；和第二端182d，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 88 and Figure 89. Bidirectional switching device 71d/72d includes resistive element 180d. Resistive element 180d includes a first terminal 181d electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182d electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件71d/72d類似於雙向切換器件71a/72a，不同之處在於電阻性元件180d安置在鈍化層126內。鈍化層126拆分成電阻性元件180d下方的下層126a和電阻性元件180d上方的上層126b。換句話說，電阻性元件180d包夾在第一層126a與下層126a和上層126b之間。第一端181d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 71d/72d is similar to bidirectional switching device 71a/72a except that resistive element 180d is disposed within passivation layer 126. The passivation layer 126 is split into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower and upper layers 126a, 126b. The first end 181d may be electrically coupled to the substrate 102 through at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182d may be electrically connected to the control pad through at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件71d/72d的製造方法類似於雙向切換器件21d的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於下部鈍化層126a沉積在鈍化層124上；毯覆式金屬/金屬化合物層143沉積在鈍化層126a上且圖案化以形成電阻性元件180d；上部鈍化層126b沉積在下部鈍化層126a之上以覆蓋 電阻性元件180d；一個或多個第三導電通孔134形成於上部鈍化層126b中以電耦合電阻性元件180d。 The fabrication method of the bidirectional switching device 71d/72d is similar to the fabrication method of the bidirectional switching device 21d, and thus may include the stages shown in Figures 6A to 6K, except that the lower passivation layer 126a is deposited on the passivation layer 124; blanket coating A metal/metal compound layer 143 of the formula is deposited on the passivation layer 126a and patterned to form a resistive element 180d; an upper passivation layer 126b is deposited on the lower passivation layer 126a to cover Resistive element 180d; one or more third conductive vias 134 are formed in the upper passivation layer 126b to electrically couple the resistive element 180d.

圖90和圖91顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件71e/72e的結構。圖90為展示可構成雙向切換器件71e/72e中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件71e/72e的部分佈局。沿圖90中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖82中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖83A至83D。沿圖90中的線E-E'截取的橫截面視圖在圖91中顯示。出於簡潔性，圖82、83A至83E和圖90、91中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 90 and 91 show the structure of a bidirectional switching device 71e/72e according to another embodiment based on the circuit diagram of FIGS. 80A/80B. Figure 90 is a partial layout of the bidirectional switching device 71e/72e showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 71e/72e. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 90 are the same as those taken along lines AA', BB' and C-C in Figure 82 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 83A to 83D. A cross-sectional view taken along line EE' in FIG. 90 is shown in FIG. 91 . For simplicity, identical structural elements in Figures 82, 83A to 83E and Figures 90, 91 are given the same reference numerals and symbols and will not be described in further detail.

參考圖90和圖91。雙向切換器件71e/72e包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 90 and Figure 91. Bidirectional switching device 71e/72e includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件71e/72e類似於雙向切換器件71a/72a，不同之處在於電阻性元件180e安置在第二鈍化層126上且由與導電跡線142相同的材料製成。第一端181e可通過至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182e可通過至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 71e/72e is similar to bidirectional switching device 71a/72a, except that resistive element 180e is disposed on second passivation layer 126 and is made of the same material as conductive trace 142. The first end 181e may be electrically coupled to the substrate 102 through at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e may be electrically connected to the control pad through at least one second conductive via 136 and at least one second conductive trace 146 .

雙向切換器件71e/72e的製造方法類似於雙向切換器件21e的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6G中所顯示的階段處，毯覆式導電層141圖案化以同時形成導電跡線142和電阻性元件180e。 The fabrication method of the bidirectional switching device 71e/72e is similar to the fabrication method of the bidirectional switching device 21e, and thus can be included in the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6G, the blanket Conductive layer 141 is patterned to simultaneously form conductive traces 142 and resistive element 180e.

圖92和圖93顯示基於圖80A/80B的電路圖的根據另一實施例的雙向切換器件71f/72f的結構。圖92為展示可構成雙向切換器件71f/72f中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件71f/72f的部分佈局。沿圖92中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖82中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖83A至83D。沿圖92中的線E-E'截取的橫截面視圖在圖93中顯示。出於簡潔性，圖82、83A至83E和圖92、93中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 92 and 93 show a structure of a bidirectional switching device 71f/72f according to another embodiment based on the circuit diagram of FIGS. 80A/80B. 92 is a partial layout of the bidirectional switching device 71f/72f showing the relationship among some elements that may constitute part of the transistor and the resistor in the bidirectional switching device 71f/72f. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 92 are the same as those taken along lines AA', BB' and C-C in Figure 82 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 83A to 83D. A cross-sectional view taken along line EE' in Figure 92 is shown in Figure 93. For simplicity, identical structural elements in Figures 82, 83A to 83E and Figures 92, 93 are given the same reference numerals and symbols and will not be described in further detail.

參考圖92和圖93。雙向切換器件71f/72f包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 92 and Figure 93. Bidirectional switching device 71f/72f includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件71f/72f類似於雙向切換器件71a/72a，不同之處在於電阻性元件180f可安置在第三鈍化層128上且由與導電跡線146相同的材料製成。第一端181f可通過至少一個TGV 162電耦合到基板102。第二端182f可電連接到控制墊。 Bidirectional switching devices 71f/72f are similar to bidirectional switching devices 71a/72a, except that resistive element 180f may be disposed on third passivation layer 128 and made of the same material as conductive traces 146. The first end 181f may be electrically coupled to the substrate 102 through at least one TGV 162. The second end 182f can be electrically connected to the control pad.

雙向切換器件71f/72f的製造方法類似於雙向切換器件21f的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6J中所顯示的階段處，毯覆式導電層145圖案化以同時形成導電跡線146和電阻性元件180f。 The fabrication method of the bidirectional switching device 71f/72f is similar to the fabrication method of the bidirectional switching device 21f and thus can be included in the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6J, the blanket Conductive layer 145 is patterned to simultaneously form conductive traces 146 and resistive element 18Of.

圖94A描繪基於圖40的電路框圖的根據一些實施例的雙向切換器件73的電路圖。 Figure 94A depicts a circuit diagram of a bidirectional switching device 73 according to some embodiments based on the circuit block diagram of Figure 40.

參考圖94A。第一電位穩定元件F1可包括第一電阻器R1，所述第一電阻器R1具有電連接到第一電力/負載節點的第一端子和電連接到主基板的第二端子。 Refer to Figure 94A. The first potential stabilizing element F1 may include a first resistor R1 having a first terminal electrically connected to the first power/load node and a second terminal electrically connected to the main substrate.

第二電位穩定元件F2可包括第二電阻器R2，所述第二電阻器R2具有電連接到第二電力/負載節點的第一端子和電連接到主基板的第二端子。 The second potential stabilizing element F2 may include a second resistor R2 having a first terminal electrically connected to the second power/load node and a second terminal electrically connected to the main substrate.

第三電位穩定元件F3可為整流元件，例如二極體D1，其具有連接到主基板的正極端子和連接到控制節點的負極端子。 The third potential stabilizing element F3 may be a rectifying element such as a diode D1 having a positive terminal connected to the main substrate and a negative terminal connected to the control node.

參考圖94B。二極體D1可由整流電晶體Q3替換以形成雙向切換器件74。整流電晶體Q3可具有均連接到主基板的閘極端子G3和源極端子S3和連接到控制節點的汲極端子D3。 Refer to Figure 94B. Diode D1 may be replaced by rectifier transistor Q3 to form bidirectional switching device 74 . Rectifying transistor Q3 may have a gate terminal G3 and a source terminal S3 both connected to the main substrate and a drain terminal D3 connected to the control node.

整流電晶體Q3可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 The rectifier transistor Q3 may be constructed from various types of transistors, including but not limited to GaN HEMTs, Si MOSFETs, Insulated Gate Bipolar Transistors (IGBTs), Junction Gate Field Effect Transistors (JFETs), and Static Induction Transistors (SITs).

圖95A至95B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件73的操作機構。 95A-95B depict the operating mechanism of the bidirectional switching device 73 in a first operating mode in which the first power/load node is biased at a voltage VH higher than the voltage VL applied to the second power/load node. .

參考圖95A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm導通時，二極體D1在電流從控制節點到第二電力/負載節點流過二極體D1時反向偏置，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)*R2/(R2+RRV)，其中RRV為二極體D1的反向電阻，R2為電阻器R2的電阻。由於R2比RRV小得多，所以基板的電位Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 95A. When a high level voltage V ON is applied to the control node such that the double-sided transistor Q m conducts, diode D1 is reverse biased as current flows through diode D1 from the control node to the second power/load node , the potential V sub of the substrate is then given by the following formula: V sub =V L +(V ON -V L )*R2/(R2+R RV ), where R RV is the reverse resistance of diode D1, R2 is the resistance of resistor R2. Since R2 is much smaller than R RV , the potential of the substrate Vsub is substantially equal to the voltage VL applied to the second power/load node.

參考圖95B。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm截止時，二極體D1在電流從第一電力/負載節點到控制節點流過二極體D1時正向偏置，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)* RFW /(RFW+R1)。由於R1比RFW大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 95B. When a low level voltage VOFF is applied to the control node such that the double sided transistor Qm is turned off, diode D1 is forward biased as current flows through diode D1 from the first power/load node to the control node, The potential V sub of the substrate is given by: V sub =V OFF +(V H -V OFF )* R FW /(R FW +R1). Since R1 is much larger than R FW , the potential V sub of the substrate is essentially equal to the low-level voltage V OFF applied to the control node.

圖95C和95D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件73的操作機構。 Figures 95C and 95D depict the operating mechanism of bidirectional switching device 73 in a second operating mode in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node. .

參考圖95C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm導通時，二極體D1在電流從控制節點到第一電力/負載節點流過二極體D1時反向偏置，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)*R1/(R1+RRV)，其中R1為電阻器R1的電阻。由於R1比RRV小得多，所以基板的電位Vsub基本上等於施加到第一電力/負載節點的電壓VL。 Refer to Figure 95C. When a high level voltage V ON is applied to the control node such that double-sided transistor Q m conducts, diode D1 is reverse biased as current flows through diode D1 from the control node to the first power/load node , the potential V sub of the substrate is then given by the following formula: V sub =V L +(V ON -V L )*R1/(R1 + R RV ), where R1 is the resistance of the resistor R1. Since R1 is much smaller than R RV , the potential V sub of the substrate is substantially equal to the voltage V L applied to the first power/load node.

參考圖95D。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm截止時，二極體D1在電流從第二電力/負載節點到控制節點流過二極體D1時正向偏置，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)* RFW/(RFW+R2)。由於R2比RFW大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 95D. When a low level voltage VOFF is applied to the control node such that the double sided transistor Qm is turned off, the diode D1 is forward biased as current flows through the diode D1 from the second power/load node to the control node, The potential V sub of the substrate is given by: V sub =V OFF +(V H -V OFF )* R FW /(R FW +R2). Since R2 is much larger than R FW , the potential V sub of the substrate is essentially equal to the low-level voltage V OFF applied to the control node.

雙向切換器件73/74可通過將氮化物基雙側電晶體Qm、電阻器R1、第二電阻器R2和二極體D1/整流電晶體Q3集成在IC晶片中而形成。 The bidirectional switching device 73/74 may be formed by integrating a nitride-based double-sided transistor Qm , a resistor R1, a second resistor R2, and a diode D1/rectifying transistor Q3 in an IC chip.

圖96和97A至97D顯示基於圖94A/94B的電路圖的雙向切換器件73a/74a的結構。圖96為展示可構成雙向切換器件73a/74a中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件73a/74a的部分佈局。圖97A至97D為分別沿圖96中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。雙向切換器件 73a/74a具有類似於雙向切換器件21a的層狀結構的層狀結構。出於簡潔性，相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 96 and 97A to 97D show the structure of the bidirectional switching device 73a/74a based on the circuit diagram of FIGS. 94A/94B. Figure 96 is a partial layout of the bidirectional switching device 73a/74a showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 73a/74a. 97A to 97D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 96, respectively. bidirectional switching device 73a/74a have a layered structure similar to that of the bidirectional switching device 21a. For the sake of simplicity, identical structural elements are given the same reference numerals and symbols and will not be described in further detail.

參考圖96和97A至97D，雙向切換器件73a/74a可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層154和一個或多個鎵穿孔(TGV)162和導電墊170。 Referring to FIGS. 96 and 97A to 97D, the bidirectional switching device 73a/74a may include a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, an S/D electrode 116, a first Passivation layer 124, passivation layer 126, third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more a second conductive trace 146, a protective layer 154 and one or more gallium vias (TGVs) 162 and conductive pads 170.

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；和第二電力/負載墊P/L2，其配置成充當第二電力/負載節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; and second power/load pad P/L2 Configured to act as a second power/load node.

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm、電阻器R1、第二電阻器R2和二極體D1/整流電晶體Q3。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm , resistor Rl, second resistor R2, and diode D1/rectifier transistor Q3.

參考圖97B。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 97B. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm . The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖97A和97C。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子。第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 Refer to Figures 97A and 97C. The S/D electrode 116 may include at least one first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . One source/drain terminal. The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子。第二S/D電極116b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . Two source/drain terminals. The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到基板102且配置成充當整流電晶體Q3的閘極端子。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102且配置成充當整流電晶體Q3的源極端子。換句話說，第二閘極結構110b和第三S/D電極116c可電短路以形成二極體D1的正極端子。 Gate structure 110 may further include at least one second gate structure 110b electrically connected to substrate 102 and configured to serve as a gate terminal for rectifier transistor Q3. S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to substrate 102 and configured to serve as a source terminal of rectifier transistor Q3. In other words, the second gate structure 110b and the third S/D electrode 116c may be electrically shorted to form the positive terminal of diode D1.

第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162連接到基板102。 The second gate structure 110b may be connected to the substrate 102 through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板102。 The third S/D electrode 116c may be electrically connected to the substrate 102 through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

返回參考圖97B。S/D電極116可包含至少一個第四S/D電極116d，所述第四S/D電極116d電連接到控制墊且配置成充當整流電晶體Q3的汲極端子(或二極體D1的負極端子)。第四S/D電極116d可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer back to Figure 97B. S/D electrode 116 may include at least one fourth S/D electrode 116d electrically connected to the control pad and configured to serve as the drain terminal of rectifier transistor Q3 (or of diode D1 negative terminal). The fourth S/D electrode 116d may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三S/D電極116c鄰近於第四S/D電極116d，且第二閘極結構110b在第四S/D電極116d與第三S/D電極116c之間。返回參考圖96和圖97D。雙向切換器件73a/74a可進一步包括電阻性元件180a以用於形成電阻器R1和R2。每一電阻性元件180a包括：第一端181a，其電連接到第一/第二電力/負載墊以充當電阻器R1/R2的第一端子；和第二端182a，其電連接到基板102以充當電阻器R1/R2的第二端子。 Preferably, the third S/D electrode 116c is adjacent to the fourth S/D electrode 116d, and the second gate structure 110b is between the fourth S/D electrode 116d and the third S/D electrode 116c. Refer back to Figure 96 and Figure 97D. The bidirectional switching device 73a/74a may further include a resistive element 180a for forming resistors R1 and R2. Each resistive element 180a includes: a first terminal 181a electrically connected to the first/second power/load pad to serve as a first terminal of resistor R1/R2; and a second terminal 182a electrically connected to the substrate 102 to act as the second terminal of resistors R1/R2.

每一電阻性元件180a可安置在鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區的同一層處。每一第一端181a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136和至少一個導電跡線146電耦合到第一/第二電力/負載墊。每一第二端182a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 Each resistive element 180a may be disposed at the same layer of the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. Each first end 181a may be electrically coupled to a first terminal via at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. 1st/2nd power/load pad. Each second end 182a may pass through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146 and at least one TGV 162 electrically connected to the substrate 102 .

雙向切換器件73a/74a的製造方法類似於雙向切換器件21a的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6A和圖6B中所顯示的階段之間，鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區通過離子注入圖案化以形成電阻性元件180a。 The fabrication method of the bidirectional switching device 73a/74a is similar to the fabrication method of the bidirectional switching device 21a and therefore may include the stages shown in Figures 6A to 6K, except that between the stages shown in Figures 6A and 6B , the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 is patterned by ion implantation to form the resistive element 180a.

圖98和圖99顯示基於圖94A/94B的電路圖的根據另一實施例的雙向切換器件73b/74b的結構。圖98為展示可構成雙向切換器件73b/74b中的電晶 體的部分和電阻器的一些元件當中的關係的雙向切換器件73b/74b的部分佈局。沿圖98中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖96中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖97A至97C。沿圖98中的線D-D'截取的橫截面視圖在圖99中顯示。出於簡潔性，圖96、97A至97D和圖98、99中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 98 and 99 show a structure of a bidirectional switching device 73b/74b according to another embodiment based on the circuit diagram of FIGS. 94A/94B. Figure 98 shows a transistor that can be constructed in the bidirectional switching device 73b/74b. A partial layout of the bidirectional switching device 73b/74b in relation to some elements of the body and the resistor. Cross-sectional views taken along lines AA', BB' and CC' in Figure 98 versus cross-sections taken along lines AA', BB' and CC' in Figure 96 The views are the same, so reference is made to Figures 97A to 97C. A cross-sectional view taken along line DD' in Figure 98 is shown in Figure 99. For simplicity, identical structural elements in Figures 96, 97A to 97D and Figures 98, 99 are given the same reference numerals and symbols and will not be described in further detail.

參考圖98和圖99。雙向切換器件73b/74b包括電阻性元件180b以用於形成電阻器R1和R2。每一電阻性元件180b包括：第一端181b，其電連接到第一/第二電力/負載墊以充當電阻器R1/R2的第一端子；和第二端182b，其電連接到基板102以充當電阻器R1/R2的第二端子。 Refer to Figure 98 and Figure 99. Bidirectional switching device 73b/74b includes resistive element 180b for forming resistors R1 and R2. Each resistive element 180b includes: a first terminal 181b electrically connected to the first/second power/load pad to serve as a first terminal of resistor R1/R2; and a second terminal 182b electrically connected to the substrate 102 to act as the second terminal of resistors R1/R2.

雙向切換器件73b/74b類似於雙向切換器件73a/74a，不同之處在於每一電阻性元件180b安置在第二氮化物基半導體層106上且由與閘極結構110相同的材料製成。每一第一端181b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136和至少一個導電跡線146電耦合到第一/第二電力/負載墊。每一第二端182b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 Bidirectional switching devices 73b/74b are similar to bidirectional switching devices 73a/74a, except that each resistive element 180b is disposed on the second nitride-based semiconductor layer 106 and is made of the same material as the gate structure 110. Each first end 181b may be electrically coupled to the first/second power/load through at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146 pad. Each second end 182b may be electrically connected through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 to substrate 102.

雙向切換器件73b/74b的製造方法類似於雙向切換器件21b的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6C中所顯示的階段處，毯覆式半導體層111和毯覆式閘電極層113圖案化以同時形成閘極結構110和電阻性元件180b。 The fabrication method of the bidirectional switching device 73b/74b is similar to the fabrication method of the bidirectional switching device 21b and thus may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6C, the blanket The semiconductor layer 111 and the blanket gate electrode layer 113 are patterned to simultaneously form the gate structure 110 and the resistive element 180b.

圖100和圖101顯示基於圖94A/94B的電路圖的根據另一實施例的雙向切換器件73c/74c的結構。圖100為展示可構成雙向切換器件73c/74c中的電 晶體的部分和電阻器的一些元件當中的關係的雙向切換器件73c/74c的部分佈局。沿圖100中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖96中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖97A至97C。沿圖100中的線D-D'截取的橫截面視圖在圖101中顯示。出於簡潔性，圖96、97A至97D和圖100、101中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 100 and 101 show the structure of a bidirectional switching device 73c/74c according to another embodiment based on the circuit diagram of FIGS. 94A/94B. Figure 100 shows the electrical circuits that can be constructed in the bidirectional switching device 73c/74c. Partial layout of the bidirectional switching device 73c/74c in relation to some elements of the crystal and the resistor. Cross-sectional views taken along lines AA', BB' and CC' in Figure 100 versus cross-sections taken along lines AA', BB' and CC' in Figure 96 The views are the same, so reference is made to Figures 97A to 97C. A cross-sectional view taken along line DD' in Figure 100 is shown in Figure 101 . For simplicity, identical structural elements in Figures 96, 97A to 97D and Figures 100, 101 are given the same reference numerals and symbols and will not be described in further detail.

參考圖100和圖101。雙向切換器件73c/74c包括電阻性元件180c以用於形成電阻器R1和R2。每一電阻性元件180c包括：第一端181c，其電連接到第一/第二電力/負載墊以充當電阻器R1/R2的第一端子；和第二端182c，其電連接到基板102以充當電阻器R1/R2的第二端子。 Refer to Figure 100 and Figure 101. Bidirectional switching device 73c/74c includes resistive element 180c for forming resistors R1 and R2. Each resistive element 180c includes: a first terminal 181c electrically connected to the first/second power/load pads to serve as first terminals of resistors R1/R2; and a second terminal 182c electrically connected to the substrate 102 to act as the second terminal of resistors R1/R2.

雙向切換器件73c/74c類似於雙向切換器件73a/74a，不同之處在於電阻性元件180c可安置在第一鈍化層124上且由與S/D電極116相同的材料製成。第一端181c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136和至少一個導電跡線146電耦合到第一/第二電力/負載墊。第二端182c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 Bidirectional switching device 73c/74c is similar to bidirectional switching device 73a/74a, except that resistive element 180c may be disposed on first passivation layer 124 and made of the same material as S/D electrode 116. The first end 181c may be electrically coupled to the first/second power/load pad through at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. The second end 182c may be electrically connected to the substrate through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102.

雙向切換器件73c/74c的製造方法類似於雙向切換器件21c的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6E中所顯示的階段處，毯覆式導電層115圖案化以同時形成S/D電極116和電阻性元件180c。 The fabrication method of the bidirectional switching device 73c/74c is similar to the fabrication method of the bidirectional switching device 21c, and therefore can include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6E, the blanket Conductive layer 115 is patterned to simultaneously form S/D electrode 116 and resistive element 180c.

圖102和圖103顯示基於圖94A/94B的電路圖的根據另一實施例的雙向切換器件73d/74d的結構。圖102為展示可構成雙向切換器件73d/74d中的 電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件73d/74d的部分佈局。沿圖102中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖96中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖97A至97C。沿圖102中的線D-D'截取的橫截面視圖在圖103中顯示。出於簡潔性，圖96、97A至97D和圖102、103中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 102 and 103 show the structure of a bidirectional switching device 73d/74d according to another embodiment based on the circuit diagram of FIGS. 94A/94B. Figure 102 shows that the bidirectional switching device 73d/74d can be configured Partial layout of the bidirectional switching device 73d/74d in relation to some elements of the transistor and the resistor. Cross-sectional views taken along lines AA', BB' and CC' in Figure 102 versus cross-sections taken along lines AA', BB' and CC' in Figure 96 The views are the same, so reference is made to Figures 97A to 97C. A cross-sectional view taken along line DD' in FIG. 102 is shown in FIG. 103 . For simplicity, identical structural elements in Figures 96, 97A to 97D and Figures 102, 103 are given the same reference numerals and symbols and will not be described in further detail.

參考圖102和圖103。雙向切換器件73d/74d包括電阻性元件180d以用於形成電阻器R1和R2。每一電阻性元件180d包括：第一端181d，其電連接到第一/第二電力/負載墊以充當電阻器R1/R2的第一端子；和第二端182d，其電連接到基板102以充當電阻器R1/R2的第二端子。 Refer to Figure 102 and Figure 103. Bidirectional switching device 73d/74d includes resistive element 180d for forming resistors R1 and R2. Each resistive element 180d includes: a first terminal 181d electrically connected to the first/second power/load pads to serve as first terminals of resistors R1/R2; and a second terminal 182d electrically connected to the substrate 102 to act as the second terminal of resistors R1/R2.

雙向切換器件73d/74d類似於雙向切換器件73a/74a，不同之處在於電阻性元件180d安置在鈍化層126內。鈍化層126拆分成電阻性元件180d下方的下層126a和電阻性元件180d上方的上層126b。換句話說，電阻性元件180d包夾在第一層126a與下層126a和上層126b之間。第一端181d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個導電通孔136和至少一個導電跡線146電耦合到第一/第二電力/負載墊。第二端182d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 Bidirectional switching device 73d/74d is similar to bidirectional switching device 73a/74a except that resistive element 180d is disposed within passivation layer 126. The passivation layer 126 is split into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower and upper layers 126a, 126b. The first end 181d may be electrically coupled to the first/second power/load pad through at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. The second end 182d may be electrically connected to the substrate through at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102.

雙向切換器件73d/74d的製造方法類似於雙向切換器件21d的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於下部鈍化層126a沉積在鈍化層124上；毯覆式金屬/金屬化合物層143沉積在鈍化層126a上且圖案化以形成電阻性元件180d；上部鈍化層126b沉積在下部鈍化層126a之上以覆蓋 電阻性元件180d；一個或多個第三導電通孔134形成於上部鈍化層126b中以電耦合電阻性元件180d。 The fabrication method of the bidirectional switching device 73d/74d is similar to the fabrication method of the bidirectional switching device 21d, and thus may include the stages shown in Figures 6A to 6K, except that the lower passivation layer 126a is deposited on the passivation layer 124; blanket coating A metal/metal compound layer 143 of the formula is deposited on the passivation layer 126a and patterned to form a resistive element 180d; an upper passivation layer 126b is deposited on the lower passivation layer 126a to cover Resistive element 180d; one or more third conductive vias 134 are formed in the upper passivation layer 126b to electrically couple the resistive element 180d.

圖104和圖105顯示基於圖94A/94B的電路圖的根據另一實施例的雙向切換器件73e/74e的結構。圖104為展示可構成雙向切換器件73e/74e中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件73e/74e的部分佈局。沿圖104中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖96中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖97A至97C。沿圖104中的線D-D'截取的橫截面視圖在圖105中顯示。出於簡潔性，圖96、97A至97D和圖104、105中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 104 and 105 show the structure of a bidirectional switching device 73e/74e according to another embodiment based on the circuit diagram of FIGS. 94A/94B. Figure 104 is a partial layout of the bidirectional switching device 73e/74e showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 73e/74e. Cross-sectional views taken along lines AA', BB' and CC' in Figure 104 versus cross-sections taken along lines AA', BB' and CC' in Figure 96 The views are the same, so reference is made to Figures 97A to 97C. A cross-sectional view taken along line DD' in FIG. 104 is shown in FIG. 105 . For simplicity, identical structural elements in Figures 96, 97A to 97D and Figures 104, 105 are given the same reference numerals and symbols and will not be described in further detail.

參考圖104和圖105。雙向切換器件73e/74e包括電阻性元件180e以用於形成電阻器R1和R2。每一電阻性元件180e包括：第一端181e，其電連接到第一/第二電力/負載墊以充當電阻器R1/R2的第一端子；和第二端182e，其電連接到基板102以充當電阻器R1/R2的第二端子。 Refer to Figure 104 and Figure 105. Bidirectional switching device 73e/74e includes resistive element 180e for forming resistors R1 and R2. Each resistive element 180e includes: a first terminal 181e electrically connected to the first/second power/load pads to serve as first terminals of resistors R1/R2; and a second terminal 182e electrically connected to the substrate 102 to act as the second terminal of resistors R1/R2.

雙向切換器件73e/74e類似於雙向切換器件73a/74a，不同之處在於電阻性元件180e安置在第二鈍化層126上且由與導電跡線142相同的材料製成。第一端181e可通過至少一個第二導電通孔136和至少一個第二導電跡線146電耦合到第一/第二電力/負載墊。第二端182e可通過至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 Bidirectional switching device 73e/74e is similar to bidirectional switching device 73a/74a, except that resistive element 180e is disposed on second passivation layer 126 and is made of the same material as conductive trace 142. The first end 181e may be electrically coupled to the first/second power/load pad through at least one second conductive via 136 and at least one second conductive trace 146 . The second end 182e may be electrically connected to the substrate 102 through at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162.

雙向切換器件73e/74e的製造方法類似於雙向切換器件21e的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6G中所顯示的階段處，毯覆式導電層141圖案化以同時形成導電跡線142和電阻性元件180e。 The fabrication method of the bidirectional switching device 73e/74e is similar to the fabrication method of the bidirectional switching device 21e, and thus can be included in the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6G, the blanket Conductive layer 141 is patterned to simultaneously form conductive traces 142 and resistive element 180e.

圖106和圖107顯示基於圖94A/94B的電路圖的根據另一實施例的雙向切換器件73f/74f的結構。圖106為展示可構成雙向切換器件73f/74f中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件73f/74f的部分佈局。沿圖106中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖96中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖97A至97C。沿圖106中的線D-D'截取的橫截面視圖在圖107中顯示。出於簡潔性，圖96、97A至97D和圖106、107中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 106 and 107 show the structure of a bidirectional switching device 73f/74f according to another embodiment based on the circuit diagram of FIGS. 94A/94B. Figure 106 is a partial layout of the bidirectional switching device 73f/74f showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 73f/74f. Cross-sectional views taken along lines AA', BB' and CC' in Figure 106 versus cross-sections taken along lines AA', BB' and CC' in Figure 96 The views are the same, so reference is made to Figures 97A to 97C. A cross-sectional view taken along line DD' in FIG. 106 is shown in FIG. 107 . For simplicity, identical structural elements in Figures 96, 97A to 97D and Figures 106, 107 are given the same reference numerals and symbols and will not be described in further detail.

參考圖106和圖107。雙向切換器件73f/74f包括電阻性元件180e以用於形成電阻器R1和R2。每一電阻性元件180e包括：第一端181e，其電連接到第一/第二電力/負載墊以充當電阻器R1/R2的第一端子；和第二端182e，其電連接到基板102以充當電阻器R1/R2的第二端子。 Refer to Figure 106 and Figure 107. Bidirectional switching device 73f/74f includes resistive element 180e for forming resistors R1 and R2. Each resistive element 180e includes: a first terminal 181e electrically connected to the first/second power/load pads to serve as first terminals of resistors R1/R2; and a second terminal 182e electrically connected to the substrate 102 to act as the second terminal of resistors R1/R2.

雙向切換器件73f/74f類似於雙向切換器件73a/74a，不同之處在於電阻性元件180f可安置在第三鈍化層128上且由與導電跡線146相同的材料製成。第一端181f可電耦合到第一/第二電力/負載墊。第二端182f可通過至少一個TGV 162電連接到基板102。 Bidirectional switching devices 73f/74f are similar to bidirectional switching devices 73a/74a, except that resistive element 180f may be disposed on third passivation layer 128 and made of the same material as conductive traces 146. The first end 181f may be electrically coupled to the first/second power/load pad. The second end 182f may be electrically connected to the substrate 102 through at least one TGV 162.

雙向切換器件73f/74f的製造方法類似於雙向切換器件21f的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6J中所顯示的階段處，毯覆式導電層145圖案化以同時形成導電跡線146和電阻性元件180f。 The fabrication method of the bidirectional switching device 73f/74f is similar to the fabrication method of the bidirectional switching device 21f, and thus can be included in the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6J, the blanket type Conductive layer 145 is patterned to simultaneously form conductive traces 146 and resistive element 18Of.

圖108為根據本發明的一些實施例的具有基板電位管理能力的雙向切換器件8的電路框圖。 Figure 108 is a circuit block diagram of a bidirectional switching device 8 with substrate potential management capabilities in accordance with some embodiments of the present invention.

如圖108中所示，雙向切換器件8具有控制節點CTRL、第一電力/負載節點P/L1和第二電力/負載節點P/L2和主基板。 As shown in FIG. 108, the bidirectional switching device 8 has a control node CTRL, first and second power/load nodes P/L1 and P/L2, and a main substrate.

雙向切換器件8包括：氮化物基雙側電晶體Qm；和基板電位管理電路，其配置成用於管理雙向切換器件8的主基板的電位。 The bidirectional switching device 8 includes: a nitride-based double-sided transistor Q m ; and a substrate potential management circuit configured to manage the potential of the main substrate of the bidirectional switching device 8 .

雙側電晶體Qm可具有電連接到控制節點的主閘極端子Gm、電連接到第一電力/負載節點的第一源極/汲極端子S/D1、電連接到第二電力/負載節點的第二源極/汲極端子S/D2，和電連接到主基板的主基板端子SUB。 The double-sided transistor Qm may have a main gate terminal Gm electrically connected to the control node, a first source/drain terminal S/D1 electrically connected to the first power/load node, a second power/load node The second source/drain terminal S/D2 of the node, and the main substrate terminal SUB are electrically connected to the main substrate.

基板電位管理電路可包括第一電位穩定元件F1，所述第一電位穩定元件F1具有電連接到第一電力/負載節點的第一傳導端子和電連接到主基板的第二傳導端子。 The substrate potential management circuit may include a first potential stabilizing element F1 having a first conductive terminal electrically connected to the first power/load node and a second conductive terminal electrically connected to the main substrate.

基板電位管理電路可進一步包括第二電位穩定元件F2，所述第二電位穩定元件F2具有連接到主基板的第一傳導端子和連接到控制節點的第二傳導端子。 The substrate potential management circuit may further include a second potential stabilizing element F2 having a first conductive terminal connected to the main substrate and a second conductive terminal connected to the control node.

當將高電平電壓施加到控制節點時，第一電位穩定元件F1可具有低於第二電位穩定元件F2的第二電阻的第一電阻，使得主基板的電位基本上等於第一和第二電力/負載節點的電位中的較低一個。 When a high-level voltage is applied to the control node, the first potential stabilizing element F1 may have a first resistance lower than the second resistance of the second potential stabilizing element F2 so that the potential of the main substrate is substantially equal to the first and second resistances. The lower of the potentials of the power/load node.

當將低電平電壓施加到控制節點時，第一電阻可高於第二電阻，使得主基板的電位基本上等於低電平電壓。 When a low-level voltage is applied to the control node, the first resistance may be higher than the second resistance so that the potential of the main substrate is substantially equal to the low-level voltage.

圖109A描繪基於圖108的電路框圖的根據一些實施例的雙向切換器件81的電路圖。 Figure 109A depicts a circuit diagram of a bidirectional switching device 81 according to some embodiments based on the circuit block diagram of Figure 108.

參考圖109A。第一電位穩定元件F1可包括二極體D1，所述二極體D1具有電連接到第一電力/負載節點的負極端子和電連接到主基板的正極端子S1。 Refer to Figure 109A. The first potential stabilizing element F1 may include a diode D1 having a negative terminal electrically connected to the first power/load node and a positive terminal S1 electrically connected to the main substrate.

參考圖109B。二極體D1可由整流電晶體Q3替換以形成雙向切換器件82。整流電晶體Q3可具有均連接到主基板的閘極端子G3和源極端子S3和連接到第一電力/負載節點的汲極端子D3。 Refer to Figure 109B. Diode D1 may be replaced by rectifier transistor Q3 to form bidirectional switching device 82. Rectifier transistor Q3 may have gate terminal G3 and source terminal S3 both connected to the main substrate and a drain terminal D3 connected to the first power/load node.

整流電晶體Q3可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 The rectifier transistor Q3 may be constructed from various types of transistors, including but not limited to GaN HEMTs, Si MOSFETs, Insulated Gate Bipolar Transistors (IGBTs), Junction Gate Field Effect Transistors (JFETs), and Static Induction Transistors (SITs).

參考圖109A和109B。第二電位穩定元件F2可為非整流元件，例如電阻器R1，其具有連接到主基板的第一端子和連接到控制節點的第二端子。 Refer to Figures 109A and 109B. The second potential stabilizing element F2 may be a non-rectifying element such as a resistor R1 having a first terminal connected to the main substrate and a second terminal connected to the control node.

圖110A和110B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件81的操作機構。 Figures 110A and 110B depict the operating mechanism of the bidirectional switching device 81 in a first mode of operation in which the first power/load node is biased at a voltage VH higher than the voltage VL applied to the second power/load node. .

參考圖110A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm導通時，電流從控制節點到第二電力/負載節點流過電阻器R1和二極體D1，基板的電位Vsub接著通過下式給出：Vsub=VL+Vm,on+(VON-VL-Vm,on)*RFW/(RFW+R)，其中R為電阻器R1的電阻，RFW為二極體D1的正向電阻，Vm,on為雙側電晶體Qm在其導通時的汲極-源極電壓。由於RFW比R小得多且Vm,on極小，所以Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 110A. When a high level voltage V ON is applied to the control node such that the double-sided transistor Q m is turned on, current flows through the resistor R1 and diode D1 from the control node to the second power/load node, and the potential of the substrate V sub Then it is given by the following formula: V sub =V L +V m,on +(V ON -VL-V m,on )*R FW /(R FW +R), where R is the resistance of resistor R1, R FW is the forward resistance of diode D1, and V m,on is the drain-source voltage of double-sided transistor Q m when it is turned on. Since R FW is much smaller than R and V m,on is extremely small, V sub is essentially equal to the voltage V L applied to the second power/load node.

參考圖110B。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm截止時，電流從第一電力/負載節點到控制節點流過二極體D1和電阻器R1，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)*R/(R+RRV)，其中RRV為二極體D1的反向電阻。由於RRV比R大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 110B. When the low-level voltage VOFF is applied to the control node so that the double-sided transistor Q m is turned off, current flows through the diode D1 and the resistor R1 from the first power/load node to the control node, and the potential V sub of the substrate passes The following formula is given: V sub =VOFF+(VH-VOFF)*R/(R+RRV), where RRV is the reverse resistance of diode D1. Since RRV is much larger than R, the potential V sub of the substrate is essentially equal to the low-level voltage VOFF applied to the control node.

圖110C和110D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件81的操作機構。 Figures 110C and 110D depict the operating mechanism of the bidirectional switching device 81 in a second operating mode in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node.

參考圖110C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm導通時，電流從控制節點到第一電力/負載節點流過電阻器R1和二極體D1，基板的電位Vsub通過下式給出：Vsub=VL+(VON-VL)* RFW/(RFW+R)。由於RFW比R小得多，所以基板的電位Vsub基本上等於施加到第一電力/負載節點的電壓VL。 Refer to Figure 110C. When a high-level voltage VON is applied to the control node to turn on the double-sided transistor Qm , current flows through the resistor R1 and diode D1 from the control node to the first power/load node, and the potential Vsub of the substrate passes The following formula gives: V sub =VL+(V ON -V L )* R FW /(R FW +R). Since R FW is much smaller than R, the potential V sub of the substrate is substantially equal to the voltage V L applied to the first power/load node.

參考圖110D。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm截止時，電流從第二電力/負載節點到控制節點流過二極體D1和電阻器R1，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-Vm,off-VOFF)*R/(RRV+R)，其中Vm,off為雙側電晶體Qm在其截止時的汲極-源極電壓。由於RRV比R大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 110D. When a low-level voltage V OFF is applied to the control node so that the double-sided transistor Q m is turned off, current flows through the diode D1 and the resistor R1 from the second power/load node to the control node, and the potential of the substrate V sub It is given by the following formula: V sub =V OFF +(VH-V m,off -V OFF )*R/(R RV +R), where V m,off is the value of the double-sided transistor Q m when it is turned off Drain-source voltage. Since R RV is much larger than R, the potential V sub of the substrate is substantially equal to the low-level voltage V OFF applied to the control node.

雙向切換器件81/82可通過將氮化物基雙側電晶體Qm、二極體D1/整流電晶體Q3和電阻器R1集成在IC晶片中而形成。 The bidirectional switching device 81/82 may be formed by integrating a nitride-based double-sided transistor Qm , diode D1/rectifier transistor Q3, and resistor R1 in an IC chip.

圖111和112A至112E顯示基於圖109A/109B的電路圖的雙向切換器件81a/82a的結構。圖111為展示可構成雙向切換器件81a/82a中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件81a/82a的部分佈局。圖112A至112E為分別沿圖111中的線A-A'、B-B'、C-C'、D-D'和E-E'截取的橫截面視圖。雙向切換器件81a/82a具有類似於雙向切換器件61a的層狀結構的層狀結構。出於簡潔性，相同元件給出相同參考標號和符號，且將不進一步詳細描述。 Figures 111 and 112A to 112E show the structure of the bidirectional switching device 81a/82a based on the circuit diagram of Figures 109A/109B. Figure 111 is a partial layout of a bidirectional switching device 81a/82a showing the relationship among some of the elements that may constitute part of the transistor and resistor in the bidirectional switching device 81a/82a. 112A to 112E are cross-sectional views taken along lines AA', BB', CC', DD', and EE', respectively, in FIG. 111 . The bidirectional switching device 81a/82a has a layered structure similar to that of the bidirectional switching device 61a. For simplicity, identical elements are given the same reference numbers and symbols and will not be described in further detail.

參考圖111和112A至112E。雙向切換器件81a/82a可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層154、一個或多個鎵穿孔(TGV)162和一個或多個導電墊170，所述導電墊170配置成電連接到外部元件(例如，外部電路)。 Refer to Figures 111 and 112A to 112E. The bidirectional switching device 81a/82a may include a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, an S/D electrode 116, a first passivation layer 124, a passivation layer 126, The third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more second conductive traces 146, Protective layer 154, one or more gallium vias (TGV) 162, and one or more conductive pads 170 configured to electrically connect to external components (eg, external circuitry).

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm、二極體D1和電阻器R1。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm , diode D1, and resistor R1.

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；和第二電力/負載墊P/L2，其配置成充當第二電力/負載節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; and second power/load pad P/L2 Configured to act as a second power/load node.

參考圖112A。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子和整流電晶體Q3的汲極端子(或二極體D1的負極端子)。第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 Refer to Figure 112A. The S/D electrode 116 may include at least one first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . a source/drain terminal and the drain terminal of rectifier transistor Q3 (or the negative terminal of diode D1). The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖112B。S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子。第二S/D電極116b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 Refer to Figure 112B. The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . Two source/drain terminals. The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖112C。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 112C. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm . The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖112D。閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到基板102且配置成充當整流電晶體Q3的閘極端子。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102且配置成充當整流電晶體Q3的源極端子。換句話說，第二閘極結構110b和第三S/D電極116c可電短路以形成二極體D1的正極端子。 Refer to Figure 112D. Gate structure 110 may further include at least one second gate structure 110b electrically connected to substrate 102 and configured to serve as a gate terminal for rectifier transistor Q3. S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to substrate 102 and configured to serve as a source terminal of rectifier transistor Q3. In other words, the second gate structure 110b and the third S/D electrode 116c may be electrically shorted to form the positive terminal of diode D1.

第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162連接到基板102。 The second gate structure 110b may be connected to the substrate 102 through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板。 The third S/D electrode 116c may be electrically connected to the substrate through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三S/D電極116c鄰近於第一S/D電極116a，且第二閘極結構110b在第一S/D電極116a與第三S/D電極116c之間。 Preferably, the third S/D electrode 116c is adjacent to the first S/D electrode 116a, and the second gate structure 110b is between the first S/D electrode 116a and the third S/D electrode 116c.

參考圖111和圖112E。雙向切換器件81a/82a可進一步包括電阻性元件180a。電阻性元件180a包括：第一端181a，其電連接到基板102以充當電阻 器R1的第一端子；和第二端182a，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 111 and Figure 112E. The bidirectional switching device 81a/82a may further include a resistive element 180a. Resistive element 180a includes a first terminal 181a that is electrically connected to substrate 102 to act as a resistor. a first terminal of resistor R1; and a second terminal 182a electrically connected to the control pad to serve as a second terminal of resistor R1.

電阻性元件180a可安置在鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區的同一層處。第一端181a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 The resistive element 180a may be disposed at the same layer of the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. The first end 181a can be electrically connected through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162 coupled to substrate 102. The second end 182a may be electrically connected through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146 to the control pad.

雙向切換器件81a/82a的製造方法類似於雙向切換器件61a的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6A和圖6B中所顯示的階段之間，鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區通過離子注入圖案化以形成電阻性元件180a。 The fabrication method of the bidirectional switching device 81a/82a is similar to the fabrication method of the bidirectional switching device 61a, and thus may include the stages shown in Figures 6A to 6K, except that between the stages shown in Figures 6A and 6B , the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 is patterned by ion implantation to form the resistive element 180a.

圖113和圖114顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件81b/82b的結構。圖113為展示可構成雙向切換器件81b/82b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件81b/82b的部分佈局。沿圖113中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖111中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖112A至112D。沿圖113中的線E-E'截取的橫截面視圖在圖114中顯示。出於簡潔性，圖111、112A至112E和圖113、114中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 113 and 114 show the structure of a bidirectional switching device 81b/82b according to another embodiment based on the circuit diagram of FIGS. 109A/109B. Figure 113 is a partial layout of a bidirectional switching device 81b/82b showing the relationship among some of the elements that may constitute portions of the transistors and resistors in the bidirectional switching device 81b/82b. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 113 are the same as those taken along lines AA', BB' and C-C in Figure 111 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 112A to 112D. A cross-sectional view taken along line EE' in FIG. 113 is shown in FIG. 114 . For simplicity, identical structural elements in Figures 111, 112A to 112E and Figures 113, 114 are given the same reference numerals and symbols and will not be described in further detail.

參考圖113和圖114。雙向切換器件81b/82b包括電阻性元件180b。電阻性元件180b包括：第一端181b，其電連接到基板102以充當電阻器R1的第一端子；和第二端182b，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 113 and Figure 114. Bidirectional switching device 81b/82b includes resistive element 180b. Resistive element 180b includes a first terminal 181b electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182b electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件81b/82b類似於雙向切換器件81a/82a，不同之處在於電阻性元件180b安置在第二氮化物基半導體層106上且由與閘極結構110相同的材料製成。第一端181b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 161電耦合到基板102。第二端182b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 81b/82b is similar to bidirectional switching device 81a/82a, except that resistive element 180b is disposed on second nitride-based semiconductor layer 106 and is made of the same material as gate structure 110. The first end 181 b may be electrically coupled to the substrate 102 through at least one first conductive via 132 , at least one first conductive trace 142 , at least one conductive via 136 , at least one conductive trace 146 , and at least one TGV 161 . The second end 182b may be electrically connected to the control pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件81b/82b的製造方法類似於雙向切換器件61b的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6C中所顯示的階段處，毯覆式半導體層111和毯覆式閘電極層113圖案化以同時形成閘極結構110和電阻性元件180b。 The fabrication method of the bidirectional switching device 81b/82b is similar to the fabrication method of the bidirectional switching device 61b and thus may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6C, the blanket The semiconductor layer 111 and the blanket gate electrode layer 113 are patterned to simultaneously form the gate structure 110 and the resistive element 180b.

圖115和圖116顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件81c/82c的結構。圖115為展示可構成雙向切換器件81c/82c中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件81c/82c的部分佈局。沿圖115中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖111中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖112A至112D。沿圖115中的線E-E'截取的橫截面視圖在圖116中顯示。出於簡潔性，圖111、112A至112E和圖115、116中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 115 and 116 show the structure of a bidirectional switching device 81c/82c according to another embodiment based on the circuit diagram of FIGS. 109A/109B. Figure 115 is a partial layout of a bidirectional switching device 81c/82c showing the relationship among some of the elements that may constitute portions of the transistors and resistors in the bidirectional switching device 81c/82c. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 115 are the same as those taken along lines AA', BB' and C-C in Figure 111 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 112A to 112D. A cross-sectional view taken along line EE' in FIG. 115 is shown in FIG. 116 . For simplicity, identical structural elements in Figures 111, 112A to 112E and Figures 115, 116 are given the same reference numerals and symbols and will not be described in further detail.

參考圖115和圖116。雙向切換器件81c/82c包括電阻性元件180c。電阻性元件180c包括：第一端181c，其電連接到基板102以充當電阻器R1的第一端子；和第二端182c，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 115 and Figure 116. Bidirectional switching device 81c/82c includes resistive element 180c. Resistive element 180c includes a first end 181c that is electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second end 182c that is electrically connected to the control pad to serve as a second terminal of resistor R1.

雙向切換器件81c/82c類似於雙向切換器件81a/82a，不同之處在於電阻性元件180c可安置在第一鈍化層124上且由與S/D電極116相同的材料製成。第一端181c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 81c/82c is similar to bidirectional switching device 81a/82a, except that resistive element 180c may be disposed on first passivation layer 124 and made of the same material as S/D electrode 116. The first end 181c may be electrically coupled to the substrate 102 through at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182c may be electrically connected to the control pad through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件81c/82c的製造方法類似於雙向切換器件61c的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6E中所顯示的階段處，毯覆式導電層115圖案化以同時形成S/D電極116和電阻性元件180c。 The fabrication method of the bidirectional switching device 81c/82c is similar to the fabrication method of the bidirectional switching device 61c, and thus can include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6E, the blanket Conductive layer 115 is patterned to simultaneously form S/D electrode 116 and resistive element 180c.

圖117和圖118顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件81d/82d的結構。圖117為展示可構成雙向切換器件81d/82d中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件81d/82d的部分佈局。沿圖117中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖111中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖112A至112D。沿圖117中的線E-E'截取的橫截面視圖在圖118中顯示。出於簡潔性，圖111、112A至112E和圖117、118中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 117 and 118 show the structure of a bidirectional switching device 81d/82d according to another embodiment based on the circuit diagram of FIGS. 109A/109B. Figure 117 is a partial layout of the bidirectional switching device 81d/82d showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 81d/82d. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 117 are the same as those taken along lines AA', BB' and C-C in Figure 111 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 112A to 112D. A cross-sectional view taken along line EE' in FIG. 117 is shown in FIG. 118 . For simplicity, identical structural elements in Figures 111, 112A to 112E and Figures 117, 118 are given the same reference numerals and symbols and will not be described in further detail.

參考圖117和圖118。雙向切換器件81d/82d包括電阻性元件180d。電阻性元件180d包括：第一端181d，其電連接到基板102以充當電阻器R1的第一端子；和第二端182d，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 117 and Figure 118. Bidirectional switching device 81d/82d includes resistive element 180d. Resistive element 180d includes a first terminal 181d electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182d electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件81d/82d類似於雙向切換器件81a/82a，不同之處在於電阻性元件180d安置在鈍化層126內。鈍化層126拆分成電阻性元件180d下方的下層126a和電阻性元件180d上方的上層126b。換句話說，電阻性元件180d包夾在第一層126a與下層126a和上層126b之間。第一端181d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電耦合到基板102。第二端182e可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 81d/82d is similar to bidirectional switching device 81a/82a except that resistive element 180d is disposed within passivation layer 126. The passivation layer 126 is split into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower and upper layers 126a, 126b. The first end 181d may be electrically coupled to the substrate 102 through at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162. The second end 182e may be electrically connected to the control pad through at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, and at least one second conductive trace 146.

雙向切換器件81d/82d的製造方法類似於雙向切換器件61d的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於下部鈍化層126a沉積在鈍化層124上；毯覆式金屬/金屬化合物層143沉積在鈍化層126a上且圖案化以形成電阻性元件180d；上部鈍化層126b沉積在下部鈍化層126a之上以覆蓋電阻性元件180d；一個或多個第三導電通孔134形成於上部鈍化層126b中以電耦合電阻性元件180d。 The fabrication method of the bidirectional switching device 81d/82d is similar to the fabrication method of the bidirectional switching device 61d, and thus may include the stages shown in Figures 6A to 6K, except that the lower passivation layer 126a is deposited on the passivation layer 124; blanket coating A metal/metal compound layer 143 of the formula is deposited on the passivation layer 126a and patterned to form a resistive element 180d; an upper passivation layer 126b is deposited on the lower passivation layer 126a to cover the resistive element 180d; one or more third conductive vias Holes 134 are formed in upper passivation layer 126b to electrically couple resistive element 180d.

圖119和圖120顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件81e/82e的結構。圖119為展示可構成雙向切換器件81e/82e中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件81e/82e的部分佈局。沿圖119中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖111中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖112A至112D。沿 圖119中的線E-E'截取的橫截面視圖在圖120中顯示。出於簡潔性，圖111、112A至112E和圖119、120中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 119 and 120 show the structure of a bidirectional switching device 81e/82e according to another embodiment based on the circuit diagram of FIGS. 109A/109B. 119 is a partial layout of a bidirectional switching device 81e/82e showing the relationship among some of the elements that may constitute portions of the transistors and resistors in the bidirectional switching device 81e/82e. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 119 are the same as those taken along lines AA', BB' and C-C in Figure 111 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 112A to 112D. along A cross-sectional view taken along line EE' in FIG. 119 is shown in FIG. 120 . For simplicity, identical structural elements in Figures 111, 112A to 112E and Figures 119, 120 are given the same reference numerals and symbols and will not be described in further detail.

參考圖119和圖120。雙向切換器件81e/82e包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 119 and Figure 120. Bidirectional switching device 81e/82e includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件81e/82e類似於雙向切換器件81a/82a，不同之處在於電阻性元件180e安置在第二鈍化層126上且由與導電跡線142相同的材料製成。第一端181e可通過至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電耦合到基板102。第二端182e可通過至少一個第二導電通孔136和至少一個第二導電跡線146電連接到控制墊。 Bidirectional switching device 81e/82e is similar to bidirectional switching device 81a/82a, except that resistive element 180e is disposed on second passivation layer 126 and is made of the same material as conductive trace 142. The first end 181e may be electrically coupled to the substrate 102 through at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162. The second end 182e may be electrically connected to the control pad through at least one second conductive via 136 and at least one second conductive trace 146 .

雙向切換器件81e/82e的製造方法類似於雙向切換器件61e的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6G中所顯示的階段處，毯覆式導電層141圖案化以同時形成導電跡線142和電阻性元件180e。 The fabrication method of the bidirectional switching device 81e/82e is similar to the fabrication method of the bidirectional switching device 61e, and thus can be included in the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6G, the blanket Conductive layer 141 is patterned to simultaneously form conductive traces 142 and resistive element 180e.

圖121和圖122顯示基於圖109A/109B的電路圖的根據另一實施例的雙向切換器件81f/82f的結構。圖121為展示可構成雙向切換器件81f/82f中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件81f/82f的部分佈局。沿圖121中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖與沿圖111中的線A-A'、B-B'和C-C'和D-D'截取的橫截面視圖相同，因此可參考圖112A至112D。沿圖121中的線E-E'截取的橫截面視圖在圖122中顯示。出於簡潔性，圖111、112A 至112E和圖121、122中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 121 and 122 show a structure of a bidirectional switching device 81f/82f according to another embodiment based on the circuit diagram of FIGS. 109A/109B. 121 is a partial layout of a bidirectional switching device 81f/82f showing the relationship among some of the elements that may constitute portions of the transistors and resistors in the bidirectional switching device 81f/82f. Cross-sectional views taken along lines AA', BB', CC' and DD' in Figure 121 are the same as those taken along lines AA', BB' and C-C in Figure 111 The cross-sectional views taken ' and D-D' are the same, so reference is made to Figures 112A to 112D. A cross-sectional view taken along line EE' in FIG. 121 is shown in FIG. 122 . For simplicity, Figures 111, 112A Identical structural elements to 112E and in Figures 121 and 122 are given the same reference numerals and symbols and will not be described in further detail.

參考圖121和圖122。雙向切換器件81f/82f包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到基板102以充當電阻器R1的第一端子；和第二端182e，其電連接到控制墊以充當電阻器R1的第二端子。 Refer to Figure 121 and Figure 122. Bidirectional switching device 81f/82f includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to substrate 102 to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to a control pad to serve as a second terminal of resistor R1.

雙向切換器件81f/82f類似於雙向切換器件81a/82a，不同之處在於電阻性元件180f可安置在第三鈍化層128上且由與導電跡線146相同的材料製成。第一端181f可通過至少一個TGV 162電耦合到基板102。第二端182f可電連接到控制墊。 Bidirectional switching devices 81f/82f are similar to bidirectional switching devices 81a/82a, except that resistive element 180f may be disposed on third passivation layer 128 and made of the same material as conductive traces 146. The first end 181f may be electrically coupled to the substrate 102 through at least one TGV 162. The second end 182f can be electrically connected to the control pad.

雙向切換器件81f/82f的製造方法類似於雙向切換器件61f的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6J中所顯示的階段處，毯覆式導電層145圖案化以同時形成導電跡線146和電阻性元件180f。 The fabrication method of the bidirectional switching device 81f/82f is similar to the fabrication method of the bidirectional switching device 61f and thus can be included in the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6J, the blanket Conductive layer 145 is patterned to simultaneously form conductive traces 146 and resistive element 18Of.

圖123A描繪基於圖108的電路框圖的根據一些實施例的雙向切換器件83的電路圖。 Figure 123A depicts a circuit diagram of a bidirectional switching device 83 according to some embodiments based on the circuit block diagram of Figure 108.

參考圖123A。第一電位穩定元件F1可包括非整流元件，例如電阻器R1，其具有電連接到第一電力/負載節點的第一端子和電連接到主基板的第二端子。 Refer to Figure 123A. The first potential stabilizing element F1 may include a non-rectifying element, such as a resistor R1, having a first terminal electrically connected to the first power/load node and a second terminal electrically connected to the main substrate.

第二電位穩定元件F2可為整流元件，例如二極體D1，其具有連接到主基板的正極端子和連接到控制節點的負極端子。 The second potential stabilizing element F2 may be a rectifying element such as a diode D1 having a positive terminal connected to the main substrate and a negative terminal connected to the control node.

參考圖123B。二極體D1可由整流電晶體Q3替換以形成雙向切換器件84。整流電晶體Q3可具有均連接到主基板的閘極端子G3和源極端子S3和連接到控制節點的汲極端子D3。 Refer to Figure 123B. Diode D1 may be replaced by rectifier transistor Q3 to form bidirectional switching device 84. Rectifying transistor Q3 may have a gate terminal G3 and a source terminal S3 both connected to the main substrate and a drain terminal D3 connected to the control node.

整流電晶體Q3可由各種類型的電晶體構造，包含但不限於GaN HEMT、Si MOSFET、絕緣閘雙極電晶體(IGBT)、結閘場效應電晶體(JFET)和靜態感應電晶體(SIT)。 The rectifier transistor Q3 may be constructed from various types of transistors, including but not limited to GaN HEMTs, Si MOSFETs, Insulated Gate Bipolar Transistors (IGBTs), Junction Gate Field Effect Transistors (JFETs), and Static Induction Transistors (SITs).

圖124A至124B描繪在第一操作模式(其中第一電力/負載節點在高於施加到第二電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件83的操作機構。 Figures 124A-124B depict the operating mechanism of the bidirectional switching device 83 in a first operating mode in which the first power/load node is biased at a voltage VH higher than the voltage VL applied to the second power/load node.

參考圖124A。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm導通時，二極體D1在電流從控制節點到第二電力/負載節點流過二極體D1時反向偏置，基板的電位Vsub接著通過下式給出：Vsub=VL+Vm,on+(VON-VL-Vm,ou)*R/(R+RRV)，其中RRV為二極體D1的反向電阻，Vm,on為雙側電晶體Qm在其導通時的汲極-源極電壓；且R為電阻器R1的電阻。由於Vm,on極小且R比RRV小，所以基板的電位Vsub基本上等於施加到第二電力/負載節點的電壓VL。 Refer to Figure 124A. When a high level voltage VON is applied to the control node such that the double-sided transistor Qm conducts, the diode D1 is reverse biased as current flows through the diode D1 from the control node to the second power/load node, The potential V sub of the substrate is then given by: V sub =V L +V m,on +(V ON -V L -V m,ou )*R/(R+R RV ), where R RV is two The reverse resistance of pole body D1, V m,on is the drain-source voltage of double-sided transistor Q m when it is turned on; and R is the resistance of resistor R1. Since V m,on is extremely small and R is smaller than R RV , the potential V sub of the substrate is substantially equal to the voltage V L applied to the second power/load node.

參考圖124B。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm截止時，二極體D1在電流從第一電力/負載節點到控制節點流過二極體D1時正向偏置，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-VOFF)*RFW/(RFW+R)。由於R比RFW大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 124B. When a low level voltage VOFF is applied to the control node such that the double sided transistor Qm is turned off, diode D1 is forward biased as current flows through diode D1 from the first power/load node to the control node, The potential V sub of the substrate is given by: V sub =V OFF +(V H -V OFF )*R FW /(R FW +R). Since R is much larger than R FW , the potential Vs ub of the substrate is essentially equal to the low-level voltage V OFF applied to the control node.

圖124C和124D描繪在第二操作模式(其中第二電力/負載節點在高於施加到第一電力/負載節點的電壓VL的電壓VH下偏置)下的雙向切換器件83的操作機構。 Figures 124C and 124D depict the operating mechanism of the bidirectional switching device 83 in a second operating mode in which the second power/load node is biased at a voltage VH higher than the voltage VL applied to the first power/load node. .

參考圖124C。當將高電平電壓VON施加到控制節點以使得雙側電晶體Qm導通時，二極體D1在電流從控制節點到第一電力/負載節點流過二極體 D1時反向偏置，基板的電位Vsub接著通過下式給出：Vsub=VL+(VON-VL)*R/(R+RRV)。由於R比RRV小得多，所以基板的電位Vsub基本上等於施加到第一電力/負載節點的電壓VL。 Refer to Figure 124C. When a high level voltage V ON is applied to the control node such that double-sided transistor Q m conducts, diode D1 is reverse biased as current flows through diode D1 from the control node to the first power/load node , the potential V sub of the substrate is then given by the following formula: V sub =V L +(V ON -V L )*R/(R+R RV ). Since R is much smaller than R RV , the potential V sub of the substrate is substantially equal to the voltage V L applied to the first power/load node.

參考圖124D。當將低電平電壓VOFF施加到控制節點以使得雙側電晶體Qm截止時，二極體D1在電流從第二電力/負載節點到控制節點流過二極體D1時正向偏置，基板的電位Vsub通過下式給出：Vsub=VOFF+(VH-Vm,off-VOFF)* RFW/(RFW+R)。由於R比RFW大得多，所以基板的電位Vsub基本上等於施加到控制節點的低電平電壓VOFF。 Refer to Figure 124D. When a low level voltage V OFF is applied to the control node such that the double-sided transistor Q m is turned off, diode D1 is forward biased as current flows through diode D1 from the second power/load node to the control node. , the potential V sub of the substrate is given by the following formula: V sub =V OFF +(V H -V m,off -V OFF )* R FW /(R FW +R). Since R is much larger than R FW , the potential V sub of the substrate is substantially equal to the low-level voltage V OFF applied to the control node.

雙向切換器件83/84可通過將氮化物基雙側電晶體Qm、電阻器R1和二極體D1/整流電晶體Q3集成在IC晶片中而形成。 The bidirectional switching device 83/84 may be formed by integrating a nitride-based double-sided transistor Qm , a resistor R1, and a diode D1/rectifier transistor Q3 in an IC chip.

圖125和126A至126D顯示基於圖123A/123B的電路圖的雙向切換器件83a/84a的結構。圖125為展示可構成雙向切換器件83a/84a中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件83a/84a的部分佈局。圖126A至126D為分別沿圖125中的線A-A'、B-B'、C-C'和D-D'截取的橫截面視圖。雙向切換器件83a/84a具有類似於雙向切換器件21a的層狀結構的層狀結構。出於簡潔性，相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 Figures 125 and 126A to 126D show the structure of the bidirectional switching device 83a/84a based on the circuit diagram of Figures 123A/123B. Figure 125 is a partial layout of a bidirectional switching device 83a/84a showing the relationship among some of the elements that may constitute portions of the transistors and resistors in the bidirectional switching device 83a/84a. 126A to 126D are cross-sectional views taken along lines AA', BB', CC', and DD' in FIG. 125, respectively. The bidirectional switching device 83a/84a has a layered structure similar to that of the bidirectional switching device 21a. For the sake of simplicity, identical structural elements are given the same reference numerals and symbols and will not be described in further detail.

參考圖125和126A至126D，雙向切換器件83a/84a可包含基板102、第一氮化物基半導體層104、第二氮化物基半導體層106、閘極結構110、S/D電極116、第一鈍化層124、鈍化層126、第三鈍化層128、一個或多個第一導電通孔132、一個或多個第二導電通孔136、一個或多個第一導電跡線142、一個或多個第二導電跡線146、保護層154和一個或多個鎵穿孔(TGV)162和導電墊170。 Referring to FIGS. 125 and 126A to 126D, the bidirectional switching device 83a/84a may include a substrate 102, a first nitride-based semiconductor layer 104, a second nitride-based semiconductor layer 106, a gate structure 110, an S/D electrode 116, a first Passivation layer 124, passivation layer 126, third passivation layer 128, one or more first conductive vias 132, one or more second conductive vias 136, one or more first conductive traces 142, one or more a second conductive trace 146, a protective layer 154 and one or more gallium vias (TGVs) 162 and conductive pads 170.

導電墊170可包含：控制墊CTRL，其配置成充當控制節點；第一電力/負載墊P/L1，其配置成充當第一電力/負載節點；和第二電力/負載墊P/L2，其配置成充當第二電力/負載節點。 Conductive pad 170 may include: control pad CTRL configured to act as a control node; first power/load pad P/L1 configured to act as a first power/load node; and second power/load pad P/L2 Configured to act as a second power/load node.

導電跡線142或146、導電通孔132或136和TGV 162可配置成電連接不同層/元件以形成氮化物基雙側電晶體Qm、電阻器R1和二極體D1/整流電晶體Q3。 Conductive traces 142 or 146, conductive vias 132 or 136, and TGVs 162 may be configured to electrically connect different layers/components to form nitride-based double-sided transistor Qm , resistor R1, and diode D1/rectifier transistor Q3 .

參考圖126A。S/D電極116可包含至少一個第一S/D電極116a，所述第一S/D電極116a電連接到第一電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第一源極/汲極端子。第一S/D電極116a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第一電力/負載墊。 Refer to Figure 126A. The S/D electrode 116 may include at least one first S/D electrode 116a electrically connected to the first power/load pad and configured to function as a third nitride-based double-sided transistor Qm . One source/drain terminal. The first S/D electrode 116a may be connected to the first power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖126B。閘極結構110可包含至少一個第一閘極結構110a，所述第一閘極結構110a電連接到控制墊且配置成充當氮化物基雙側電晶體Qm的主閘極端子。第一閘極結構110a可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 Refer to Figure 126B. The gate structure 110 may include at least one first gate structure 110a electrically connected to the control pad and configured to serve as a main gate terminal of the nitride-based double-sided transistor Qm. The first gate structure 110a may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

S/D電極116可包含至少一個第四S/D電極116d，所述第四S/D電極116d電連接到控制墊且配置成充當整流電晶體Q3的汲極端子(或二極體D1的負極端子)。第四S/D電極116d可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到控制墊。 S/D electrode 116 may include at least one fourth S/D electrode 116d electrically connected to the control pad and configured to serve as the drain terminal of rectifier transistor Q3 (or of diode D1 negative terminal). The fourth S/D electrode 116d may be connected to the control pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

參考圖126C。S/D電極116可包含至少一個第二S/D電極116b，所述第二S/D電極116b電連接到第二電力/負載墊且配置成充當氮化物基雙側電晶體Qm的第二源極/汲極端子。第二S/D電極116b可通過至少一個導電通孔132、至 少一個導電跡線142、至少一個導電通孔136和至少一個導電跡線146連接到第二電力/負載墊。 Refer to Figure 126C. The S/D electrode 116 may include at least one second S/D electrode 116b electrically connected to the second power/load pad and configured to function as a third nitride-based double-sided transistor Qm . Two source/drain terminals. The second S/D electrode 116b may be connected to the second power/load pad through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, and at least one conductive trace 146.

閘極結構110可進一步包含至少一個第二閘極結構110b，所述第二閘極結構110b電連接到基板102且配置成充當整流電晶體Q3的閘極端子。S/D電極116可包含至少一個第三S/D電極116c，所述第三S/D電極116c電連接到基板102且配置成充當整流電晶體Q3的源極端子。換句話說，第二閘極結構110b和第三S/D電極116c可電短路以形成二極體D1的正極端子。 Gate structure 110 may further include at least one second gate structure 110b electrically connected to substrate 102 and configured to serve as a gate terminal for rectifier transistor Q3. S/D electrode 116 may include at least one third S/D electrode 116c electrically connected to substrate 102 and configured to serve as a source terminal of rectifier transistor Q3. In other words, the second gate structure 110b and the third S/D electrode 116c may be electrically shorted to form the positive terminal of diode D1.

第二閘極結構110b可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162連接到基板102。 The second gate structure 110b may be connected to the substrate 102 through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

第三S/D電極116c可通過至少一個導電通孔132、至少一個導電跡線142、至少一個導電通孔136、至少一個導電跡線146和至少一個TGV 162電連接到基板102。 The third S/D electrode 116c may be electrically connected to the substrate 102 through at least one conductive via 132, at least one conductive trace 142, at least one conductive via 136, at least one conductive trace 146, and at least one TGV 162.

優選地，第二S/D電極116b鄰近於第一S/D電極116a，且第一閘極結構110a在第一S/D電極116a與第二S/D電極116b之間。 Preferably, the second S/D electrode 116b is adjacent to the first S/D electrode 116a, and the first gate structure 110a is between the first S/D electrode 116a and the second S/D electrode 116b.

優選地，第三S/D電極116c鄰近於第四S/D電極116d，且第二閘極結構110b在第四S/D電極116d與第三S/D電極116c之間。 Preferably, the third S/D electrode 116c is adjacent to the fourth S/D electrode 116d, and the second gate structure 110b is between the fourth S/D electrode 116d and the third S/D electrode 116c.

參考圖125和圖126D。雙向切換器件83a/84a可進一步包括電阻性元件180a。電阻性元件180a包括：第一端181a，其電連接到第一電力/負載墊以充當電阻器R1的第一端子；和第二端182a，其電連接到基板102以充當電阻器R1的第二端子。 Refer to Figure 125 and Figure 126D. The bidirectional switching device 83a/84a may further include a resistive element 180a. Resistive element 180a includes a first terminal 181a electrically connected to a first power/load pad to serve as a first terminal of resistor R1 and a second terminal 182a electrically connected to substrate 102 to serve as a first terminal of resistor R1 Two terminals.

電阻性元件180a可安置在鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區的同一層處。每一第一端181a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136和至少一個導電跡線146電耦合到第一電力/負載墊。第二端182a可通過至少一個歐姆接觸件116e、至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 The resistive element 180a may be disposed at the same layer of the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106. Each first end 181a may be electrically coupled to a first terminal via at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. One power/load pad. The second end 182a may pass through at least one ohmic contact 116e, at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least A TGV 162 is electrically connected to the substrate 102 .

雙向切換器件83a/84a的製造方法類似於雙向切換器件21a的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6A和圖6B中所顯示的階段之間，鄰近於第一氮化物基半導體層104與第二氮化物基半導體層106之間的異質結介面的2DEG區通過離子注入圖案化以形成電阻性元件180a。 The fabrication method of the bidirectional switching device 83a/84a is similar to the fabrication method of the bidirectional switching device 21a, and thus may include the stages shown in Figures 6A to 6K, except that between the stages shown in Figures 6A and 6B , the 2DEG region adjacent to the heterojunction interface between the first nitride-based semiconductor layer 104 and the second nitride-based semiconductor layer 106 is patterned by ion implantation to form the resistive element 180a.

圖127和圖128顯示基於圖123A/123B的電路圖的根據另一實施例的雙向切換器件83b/84b的結構。圖127為展示可構成雙向切換器件83b/84b中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件83b/84b的部分佈局。沿圖127中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖125中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖126A至126C。沿圖127中的線D-D'截取的橫截面視圖在圖128中顯示。出於簡潔性，圖125、126A至126D和圖127、128中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 127 and 128 show the structure of a bidirectional switching device 83b/84b according to another embodiment based on the circuit diagram of FIGS. 123A/123B. Figure 127 is a partial layout of a bidirectional switching device 83b/84b showing the relationship among some of the elements that may constitute portions of the transistors and resistors in the bidirectional switching device 83b/84b. Cross-sectional views taken along lines AA', BB' and CC' in Figure 127 versus cross-sections taken along lines AA', BB' and CC' in Figure 125 The views are the same, so reference is made to Figures 126A to 126C. A cross-sectional view taken along line DD' in FIG. 127 is shown in FIG. 128 . For simplicity, identical structural elements in Figures 125, 126A to 126D and Figures 127, 128 are given the same reference numerals and symbols and will not be described in further detail.

參考圖127和圖128。雙向切換器件83b/84b包括電阻性元件180b。電阻性元件180b包括：第一端181b，其電連接到第一電力/負載墊以充當電阻器R1的第一端子；和第二端182b，其電連接到基板102以充當電阻器R1的第二端子。 Refer to Figure 127 and Figure 128. Bidirectional switching device 83b/84b includes resistive element 180b. Resistive element 180b includes a first terminal 181b electrically connected to a first power/load pad to serve as a first terminal of resistor R1 and a second terminal 182b electrically connected to substrate 102 to serve as a first terminal of resistor R1 Two terminals.

雙向切換器件83b/84b類似於雙向切換器件83a/84a，不同之處在於電阻性元件180b安置在第二氮化物基半導體層106上且由與閘極結構110相同的材料製成。第一端181b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136和至少一個導電跡線146電耦合到第一電力/負載墊。第二端182b可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 Bidirectional switching device 83b/84b is similar to bidirectional switching device 83a/84a, except that resistive element 180b is disposed on second nitride-based semiconductor layer 106 and is made of the same material as gate structure 110. The first end 181b may be electrically coupled to the first power/load pad through at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. The second end 182b may be electrically connected to the substrate through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102.

雙向切換器件83b/84b的製造方法類似於雙向切換器件21b的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6C中所顯示的階段處，毯覆式半導體層111和毯覆式閘電極層113圖案化以同時形成閘極結構110和電阻性元件180b。 The fabrication method of the bidirectional switching device 83b/84b is similar to the fabrication method of the bidirectional switching device 21b, and thus may include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6C, the blanket The semiconductor layer 111 and the blanket gate electrode layer 113 are patterned to simultaneously form the gate structure 110 and the resistive element 180b.

圖129和圖130顯示基於圖123A/123B的電路圖的根據另一實施例的雙向切換器件83c/84c的結構。圖129為展示可構成雙向切換器件83c/84c中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件83c/84c的部分佈局。沿圖129中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖125中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖126A至126C。沿圖129中的線D-D'截取的橫截面視圖在圖130中顯示。出於簡潔性，圖125、126A至126D和圖129、130中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 129 and 130 show the structure of a bidirectional switching device 83c/84c according to another embodiment based on the circuit diagram of FIGS. 123A/123B. 129 is a partial layout of the bidirectional switching device 83c/84c showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 83c/84c. Cross-sectional views taken along lines AA', BB' and CC' in Figure 129 versus cross-sections taken along lines AA', BB' and CC' in Figure 125 The views are the same, so reference is made to Figures 126A to 126C. A cross-sectional view taken along line DD' in FIG. 129 is shown in FIG. 130 . For simplicity, identical structural elements in Figures 125, 126A to 126D and Figures 129, 130 are given the same reference numerals and symbols and will not be described in further detail.

參考圖129和圖130。雙向切換器件83c/84c包括電阻性元件180c。電阻性元件180c包括：第一端181c，其電連接到第一電力/負載墊以充當電阻器R1的第一端子；和第二端182c，其電連接到基板102以充當電阻器R1的第二端子。 Refer to Figure 129 and Figure 130. Bidirectional switching device 83c/84c includes resistive element 180c. Resistive element 180c includes a first terminal 181c electrically connected to a first power/load pad to serve as a first terminal of resistor R1 and a second terminal 182c electrically connected to substrate 102 to serve as a first terminal of resistor R1 Two terminals.

雙向切換器件83c/84c類似於雙向切換器件83a/84a，不同之處在於電阻性元件180c可安置在第一鈍化層124上且由與S/D電極116相同的材料製成。第一端181c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個導電通孔136和至少一個導電跡線146電耦合到第一電力/負載墊。第二端182c可通過至少一個第一導電通孔132、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 Bidirectional switching device 83c/84c is similar to bidirectional switching device 83a/84a, except that resistive element 180c may be disposed on first passivation layer 124 and made of the same material as S/D electrode 116. The first end 181c may be electrically coupled to the first power/load pad through at least one first conductive via 132, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. The second end 182c may be electrically connected to the substrate through at least one first conductive via 132, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102.

雙向切換器件83c/84c的製造方法類似於雙向切換器件21c的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6E中所顯示的階段處，毯覆式導電層115圖案化以同時形成S/D電極116和電阻性元件180c。 The fabrication method of the bidirectional switching device 83c/84c is similar to the fabrication method of the bidirectional switching device 21c, and therefore can include the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6E, the blanket Conductive layer 115 is patterned to simultaneously form S/D electrode 116 and resistive element 180c.

圖131和圖132顯示基於圖123A/123B的電路圖的根據另一實施例的雙向切換器件83d/84d的結構。圖131為展示可構成雙向切換器件83d/84d中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件83d/84d的部分佈局。沿圖131中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖125中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖126A至126C。沿圖131中的線D-D'截取的橫截面視圖在圖132中顯示。出於簡潔性，圖125、126A至126D和圖131、132中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 131 and 132 show the structure of a bidirectional switching device 83d/84d according to another embodiment based on the circuit diagram of FIGS. 123A/123B. Figure 131 is a partial layout of a bidirectional switching device 83d/84d showing the relationship among some of the elements that may constitute part of the transistor and resistor in the bidirectional switching device 83d/84d. Cross-sectional views taken along lines AA', BB' and CC' in Figure 131 versus cross-sections taken along lines AA', BB' and CC' in Figure 125 The views are the same, so reference is made to Figures 126A to 126C. A cross-sectional view taken along line DD' in FIG. 131 is shown in FIG. 132 . For simplicity, identical structural elements in Figures 125, 126A to 126D and Figures 131, 132 are given the same reference numerals and symbols and will not be described in further detail.

參考圖131和圖132。雙向切換器件83d/84d包括電阻性元件180d。電阻性元件180d包括：第一端181d，其電連接到第一電力/負載墊以充當電阻器R1的第一端子；和第二端182d，其電連接到基板102以充當電阻器R1的第二端子。 Refer to Figure 131 and Figure 132. Bidirectional switching device 83d/84d includes resistive element 180d. Resistive element 180d includes a first terminal 181d electrically connected to a first power/load pad to serve as a first terminal of resistor R1 and a second terminal 182d electrically connected to substrate 102 to serve as a first terminal of resistor R1 Two terminals.

雙向切換器件83d/84d類似於雙向切換器件83a/84a，不同之處在於電阻性元件180d安置在鈍化層126內。鈍化層126拆分成電阻性元件180d下方的下層126a和電阻性元件180d上方的上層126b。換句話說，電阻性元件180d包夾在第一層126a與下層126a和上層126b之間。第一端181d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個導電通孔136和至少一個導電跡線146電耦合到第一電力/負載墊。第二端182d可通過至少一個第三導電通孔134、至少一個第一導電跡線142、至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 Bidirectional switching device 83d/84d is similar to bidirectional switching device 83a/84a except that resistive element 180d is disposed within passivation layer 126. The passivation layer 126 is split into a lower layer 126a below the resistive element 180d and an upper layer 126b above the resistive element 180d. In other words, the resistive element 180d is sandwiched between the first layer 126a and the lower and upper layers 126a, 126b. The first end 181d may be electrically coupled to the first power/load pad through at least one third conductive via 134, at least one first conductive trace 142, at least one conductive via 136, and at least one conductive trace 146. The second end 182d may be electrically connected to the substrate through at least one third conductive via 134, at least one first conductive trace 142, at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162 102.

雙向切換器件83d/84d的製造方法類似於雙向切換器件21d的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於下部鈍化層126a沉積在鈍化層124上；毯覆式金屬/金屬化合物層143沉積在鈍化層126a上且圖案化以形成電阻性元件180d；上部鈍化層126b沉積在下部鈍化層126a之上以覆蓋電阻性元件180d；一個或多個第三導電通孔134形成於上部鈍化層126b中以電耦合電阻性元件180d。 The fabrication method of the bidirectional switching device 83d/84d is similar to the fabrication method of the bidirectional switching device 21d, and thus may include the stages shown in Figures 6A to 6K, except that the lower passivation layer 126a is deposited on the passivation layer 124; blanket coating A metal/metal compound layer 143 of the formula is deposited on the passivation layer 126a and patterned to form a resistive element 180d; an upper passivation layer 126b is deposited on the lower passivation layer 126a to cover the resistive element 180d; one or more third conductive vias Holes 134 are formed in upper passivation layer 126b to electrically couple resistive element 180d.

圖133和圖134顯示基於圖123A/123B的電路圖的根據另一實施例的雙向切換器件83e/84e的結構。圖133為展示可構成雙向切換器件83e/84e中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件83e/84e的部分佈局。沿圖133中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖125中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖126A至126C。沿圖133中的線D-D'截取的橫截面視圖在圖134中顯示。出於簡潔性，圖125、126A至126D和圖133、134中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 133 and 134 show the structure of a bidirectional switching device 83e/84e according to another embodiment based on the circuit diagram of FIGS. 123A/123B. 133 is a partial layout of the bidirectional switching device 83e/84e showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 83e/84e. Cross-sectional views taken along lines AA', BB' and CC' in Figure 133 versus cross-sections taken along lines AA', BB' and CC' in Figure 125 The views are the same, so reference is made to Figures 126A to 126C. A cross-sectional view taken along line DD' in FIG. 133 is shown in FIG. 134 . For simplicity, identical structural elements in Figures 125, 126A to 126D and Figures 133, 134 are given the same reference numerals and symbols and will not be described in further detail.

參考圖133和圖134。雙向切換器件83e/84e包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到第一電力/負載墊以充當電阻器R1的第一端子；和第二端182e，其電連接到基板102以充當電阻器R1的第二端子。 Refer to Figure 133 and Figure 134. Bidirectional switching device 83e/84e includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to a first power/load pad to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to substrate 102 to serve as a first terminal of resistor R1 Two terminals.

雙向切換器件83e/84e類似於雙向切換器件83a/84a，不同之處在於電阻性元件180e安置在第二鈍化層126上且由與導電跡線142相同的材料製成。第一端181e可通過至少一個第二導電通孔136和至少一個第二導電跡線146電耦合到第一電力/負載墊。第二端182e可通過至少一個第二導電通孔136、至少一個第二導電跡線146和至少一個TGV 162電連接到基板102。 Bidirectional switching device 83e/84e is similar to bidirectional switching device 83a/84a, except that resistive element 180e is disposed on second passivation layer 126 and is made of the same material as conductive trace 142. The first end 181e may be electrically coupled to the first power/load pad through at least one second conductive via 136 and at least one second conductive trace 146 . The second end 182e may be electrically connected to the substrate 102 through at least one second conductive via 136, at least one second conductive trace 146, and at least one TGV 162.

雙向切換器件83e/84e的製造方法類似於雙向切換器件21e的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6G中所顯示的階段處，毯覆式導電層141圖案化以同時形成導電跡線142和電阻性元件180e。 The fabrication method of the bidirectional switching device 83e/84e is similar to the fabrication method of the bidirectional switching device 21e, and thus can be included in the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6G, the blanket Conductive layer 141 is patterned to simultaneously form conductive traces 142 and resistive element 180e.

圖135和圖136顯示基於圖123A/123B的電路圖的根據另一實施例的雙向切換器件83f/84f的結構。圖135為展示可構成雙向切換器件83f/84f中的電晶體的部分和電阻器的一些元件當中的關係的雙向切換器件83f/84f的部分佈局。沿圖135中的線A-A'、B-B'和C-C'截取的橫截面視圖與沿圖125中的線A-A'、B-B'和C-C'截取的橫截面視圖相同，因此可參考圖126A至126C。沿圖135中的線D-D'截取的橫截面視圖在圖136中顯示。出於簡潔性，圖125、126A至126D和圖135、136中的相同結構元件給出相同參考標號和符號，且將不進一步詳細描述。 135 and 136 show the structure of a bidirectional switching device 83f/84f according to another embodiment based on the circuit diagram of FIGS. 123A/123B. 135 is a partial layout of the bidirectional switching device 83f/84f showing the relationship among some of the elements that may constitute part of the transistor and the resistor in the bidirectional switching device 83f/84f. Cross-sectional views taken along lines AA', BB' and CC' in Figure 135 versus cross-sections taken along lines AA', BB' and CC' in Figure 125 The views are the same, so reference is made to Figures 126A to 126C. A cross-sectional view taken along line DD' in FIG. 135 is shown in FIG. 136 . For simplicity, identical structural elements in Figures 125, 126A to 126D and Figures 135, 136 are given the same reference numbers and symbols and will not be described in further detail.

參考圖135和圖136。雙向切換器件83f/84f包括電阻性元件180e。電阻性元件180e包括：第一端181e，其電連接到第一電力/負載墊以充當電阻器R1的第一端子；和第二端182e，其電連接到基板102以充當電阻器R1的第二端子。 Refer to Figure 135 and Figure 136. Bidirectional switching device 83f/84f includes resistive element 180e. Resistive element 180e includes a first terminal 181e electrically connected to a first power/load pad to serve as a first terminal of resistor R1 and a second terminal 182e electrically connected to substrate 102 to serve as a first terminal of resistor R1 Two terminals.

雙向切換器件83f/84f類似於雙向切換器件83a/84a，不同之處在於電阻性元件180f可安置在第三鈍化層128上且由與導電跡線146相同的材料製成。第一端181f可電耦合到第一電力/負載墊。第二端182f可通過至少一個TGV 162電連接到基板102。 Bidirectional switching devices 83f/84f are similar to bidirectional switching devices 83a/84a, except that resistive element 180f may be disposed on third passivation layer 128 and made of the same material as conductive traces 146. The first end 181f may be electrically coupled to the first power/load pad. The second end 182f may be electrically connected to the substrate 102 through at least one TGV 162.

雙向切換器件83f/84f的製造方法類似於雙向切換器件21f的製造方法，因此可包含在圖6A至6K中所顯示的階段，不同之處在於在圖6J中所顯示的階段處，毯覆式導電層145圖案化以同時形成導電跡線146和電阻性元件180f。 The fabrication method of the bidirectional switching device 83f/84f is similar to the fabrication method of the bidirectional switching device 21f and thus can be included in the stages shown in Figures 6A to 6K, except that at the stage shown in Figure 6J, the blanket Conductive layer 145 is patterned to simultaneously form conductive traces 146 and resistive element 18Of.

本發明的以上描述是為了達到說明和描述目的而提供。本發明並非意圖全面性地或是將本發明限制成上所公開的精確形式。意圖詳盡無遺或僅限於所公開的精確形式。對於發明所屬技術領域通常知識者來說，顯著地，可存在許多修改和變化。 The foregoing description of the present invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise forms disclosed. are not intended to be exhaustive or limited to the precise form disclosed. It will be apparent to one of ordinary skill in the art to which this invention belongs that many modifications and variations are possible.

以上實施方式是經挑選並配上相應描述，以為了盡可能地解釋本發明的原理及其實際應用，從而使本發明領域所屬技術領域通常知識者能夠理解到，本發明的各種實施例以及適合於預期特定用途的各式修改。 The above embodiments have been selected and described accordingly in order to explain the principles of the present invention and its practical applications as much as possible, so that those of ordinary skill in the field of the present invention can understand the various embodiments of the present invention and their suitable applications. Various modifications for the intended specific use.

如本文所用且未另行定義的術語，像是「實質上地」、「實質的」、「近似地」和「約」，其為用於描述和解釋小的變化。當與事件或狀況一起使用時，術語可以包括事件或狀況有精確發生的示例，以及事件或狀況近似發生的示例。例如，當與數值一起使用時，術語可以包含小於或等於所述數值的±10%的變化範圍，例如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%，小於或等於±0.1%，或小於或等於±0.05%。對於術語「實質共面」，其可指沿同一平面躺在微米範圍內的兩個表面， 例如在40微米(μm)內、在30μm內、在20μm內、在10μm內，或是沿同一平面躺在1μm內。 As used herein and not otherwise defined, terms such as "substantially," "substantially," "approximately," and "approximately" are used to describe and explain minor variations. When used with an event or condition, the term may include examples of the exact occurrence of the event or condition, as well as examples of approximate occurrence of the event or condition. For example, when used with a numerical value, the term may include a range of less than or equal to ±10% of the stated numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to Equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. By the term "substantially coplanar" it can refer to two surfaces lying along the same plane within the range of microns, For example, within 40 microns (μm), within 30 μm, within 20 μm, within 10 μm, or lying along the same plane within 1 μm.

如本文所使用的，除非上下文另有明確規定，否則單數術語「單個」、「一個」和「所述單個」可包括複數參考詞。在一些實施方式的描述中，所提供的在另一元件「上方」或「上面」的元件可以包括的狀況有，前一元件直接在後一元件上(例如，與後一元件有物理接觸)的狀況，以及一個或多個仲介元件位於前一元件和後一元件之間的狀況。 As used herein, the singular terms "single," "an," and "the single" may include plural references unless the context clearly dictates otherwise. In the description of some embodiments, references to an element being "above" or "above" another element may include situations where the former element is directly on (e.g., in physical contact with) the latter element. status, and the status of one or more intermediary elements between the previous element and the following element.

雖然已經參考本揭露內容的具體實施方式來描述和說明本揭露內容，但是這些描述和說明並不受到限制。本發明所屬技術領域通常知識者應當理解，在不脫離所附權利要求所定義的本揭露內容的真實精神和範圍的情況下，可以進行各種修改和替換為等效物。附圖並非一定是按比例繪製而成的。由於製造工藝和公差的因素，本揭露內容中所呈現的工藝與實際裝置之間可能存在區別。本揭露內容的其他實施方式可能沒有具體說明。說明書和附圖應當視為是說明性的，而不是限制性的。可作出修改以使特定情況、材料、物質組成、方法或過程能夠適應本揭露內容的目的、精神和範圍。所有這些修改都會落在本文所附權利要求的範圍內。雖然本文所揭露的方法是透過參照特定循序執行特定操作來描述的，但是應當理解，可以進行組合、子劃分或重新排序這些操作，以形成等效的方法，並且此並不會脫離本公開的教示。因此，除非在此有特別指出，否則，此些操作的順序和分組是不受限制的。 Although the present disclosure has been described and illustrated with reference to specific embodiments of the disclosure, these descriptions and illustrations are not limiting. It will be understood by those of ordinary skill in the art that various modifications and equivalents may be made without departing from the true spirit and scope of the disclosure as defined by the appended claims. The drawings are not necessarily to scale. Due to manufacturing processes and tolerances, there may be differences between the processes presented in this disclosure and actual devices. Other implementations of the present disclosure may not be specifically described. The description and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method or process to the purpose, spirit and scope of this disclosure. All such modifications would fall within the scope of the claims appended hereto. Although the methods disclosed herein are described with reference to performing specific operations in a specific order, it should be understood that these operations may be combined, subdivided, or reordered to form equivalent methods without departing from the scope of the present disclosure. Teaching. Therefore, unless otherwise specified herein, the order and grouping of such operations is unrestricted.

1:雙向切換器件 1: Bidirectional switching device

CTRL:控制節點 CTRL: control node

F1、F2、F3:第一、第二、第三電位穩定元件 F1, F2, F3: the first, second and third potential stabilizing elements

Gm:主閘極端子 G m : Main gate terminal

P/L1、P/L2:第一、第二電力/負載節點 P/L1, P/L2: first and second power/load nodes

F1、F2、F3:第一、第二、第三電位穩定元件 F1, F2, F3: the first, second and third potential stabilizing elements

Qm:雙側電晶體 Q m : double-sided transistor

REF:參考節點 REF: reference node

S/D1、S/D2:第一、第二源極/汲極端子 S/D1, S/D2: first and second source/drain terminals

SUB:主基板端子 SUB: main circuit board terminal

Claims (15)

一種具有基板電位管理能力的氮化物基雙向切換器件，其具有控制節點、第一電力/負載節點、第二電力/負載節點、參考節點和主基板，且包括：氮化物基雙側電晶體，其具有連接到所述控制節點的主閘極端子、連接到所述第一電力/負載節點的第一源極/汲極端子、連接到所述第二電力/負載節點的第二源極/汲極端子，和連接到所述主基板的主基板端子；和基板電位管理電路，其配置成用於管理所述主基板的電位，所述基板電位管理電路包括第一電位穩定元件，所述第一電位穩定元件具有電連接到所述控制節點的控制端子、電連接到所述第一電力/負載節點的第一傳導端子、電連接到所述主基板的第二傳導端子和電連接到所述主基板的基板端子；其中，所述主基板通過所述參考節點電連接到第二電位穩定元件；當將高電平電壓施加到所述控制節點時，所述第一電位穩定元件具有低於所述第二電位穩定元件的第二電阻的第一電阻，使得所述主基板的電位基本上等於所述第一電力/負載節點和所述第二電力/負載節點的電位中的較低一個。 A nitride-based bidirectional switching device with substrate potential management capability, which has a control node, a first power/load node, a second power/load node, a reference node and a main substrate, and includes: a nitride-based double-sided transistor, It has a main gate terminal connected to the control node, a first source/drain terminal connected to the first power/load node, a second source/drain terminal connected to the second power/load node. a drain terminal, and a main substrate terminal connected to the main substrate; and a substrate potential management circuit configured to manage the potential of the main substrate, the substrate potential management circuit including a first potential stabilizing element, A first potential stabilizing element has a control terminal electrically connected to the control node, a first conductive terminal electrically connected to the first power/load node, a second conductive terminal electrically connected to the main substrate, and a first conductive terminal electrically connected to the main substrate. a substrate terminal of the main substrate; wherein the main substrate is electrically connected to a second potential stabilizing element through the reference node; when a high-level voltage is applied to the control node, the first potential stabilizing element has A first resistance lower than a second resistance of the second potential stabilizing element such that the potential of the main substrate is substantially equal to the greater of the potentials of the first power/load node and the second power/load node. One lower. 如請求項1所述的氮化物基雙向切換器件，其中，其中當將低電平電壓施加到所述控制節點時，所述第一電阻高於所述第二電阻，使得所述主基板的所述電位基本上等於接地電位。 The nitride-based bidirectional switching device according to claim 1, wherein when a low-level voltage is applied to the control node, the first resistance is higher than the second resistance, so that the main substrate The potential is substantially equal to ground potential. 如請求項1或2所述的氮化物基雙向切換器件，其中，所述第一電位穩定元件為第一基板耦合電晶體，所述第一基板耦合電晶體具有連接到所述控制節點的閘極端子、連接到所述第一電力/負載節點的汲極端子、 連接到所述主基板的源極端子；且所述第二電位穩定元件為電阻器，所述電阻器具有通過所述參考節點連接到所述主基板的第一端子和連接到接地的第二端子。 The nitride-based bidirectional switching device according to claim 1 or 2, wherein the first potential stabilizing element is a first substrate coupling transistor, and the first substrate coupling transistor has a gate connected to the control node. terminal, the drain terminal connected to said first power/load node, connected to the source terminal of the main substrate; and the second potential stabilizing element is a resistor having a first terminal connected to the main substrate through the reference node and a second terminal connected to ground. terminal. 如請求項3所述的氮化物基雙向切換器件，其中所述氮化物基雙側電晶體和所述第一基板耦合電晶體集成在積體電路(IC)晶片中，所述積體電路晶片包括：基板；第一氮化物基半導體層，其安置在所述基板上方；第二氮化物基半導體層，其安置在所述第一氮化物基半導體層上且具有大於所述第一氮化物基半導體層的帶隙的帶隙；一個或多個閘極結構，其安置在所述第二氮化物基半導體層上方，所述一個或多個閘極結構各自包含閘極半導體層和安置在所述閘極半導體層上的閘電極層；第一鈍化層，其安置在所述第二氮化物基半導體層上且覆蓋閘極金屬層；一個或多個源極/汲極(S/D)電極，其安置在所述第二氮化物基半導體層上且穿透所述第一鈍化層；第二鈍化層，其安置在所述第一鈍化層上且覆蓋所述S/D電極；一個或多個第一導電通孔，其安置在所述第二鈍化層內；第一導電層，其安置在所述第二鈍化層上且圖案化以形成一個或多個第一導電跡線；第三鈍化層，其安置在所述第一導電層上且覆蓋所述一個或多個導電跡線；一個或多個第二導電通孔，其安置在所述第三鈍化層內；至少一個鎵穿孔(TGV)，其從第二導電層縱向延伸且穿透到所述基板中； 所述第二導電層，其安置在所述第三鈍化層上且圖案化以形成一個或多個第二導電跡線；和保護層，其安置在所述第二導電層上方且具有一個或多個開口以暴露一個或多個導電墊，所述一個或多個導電墊包含：控制墊，其配置成充當所述控制節點；第一電力/負載墊，其配置成充當所述第一電力/負載節點；第二電力/負載墊，其配置成充當所述第二電力/負載節點；和參考墊，其配置成充當所述參考節點；且；其中所述一個或多個S/D電極包含：至少一個第一S/D電極，其電連接到所述第一電力/負載墊以充當所述氮化物基雙側電晶體的所述第一源極/汲極端子和所述第一基板耦合電晶體的所述汲極端子；至少一個第二S/D電極，其電連接到所述第二電力/負載墊以充當所述氮化物基雙側電晶體的所述第二源極/汲極端子；至少一個第三S/D電極，其電連接到所述基板和所述參考墊以充當所述第一基板耦合電晶體的所述源極端子；且其中所述一個或多個閘極結構包含：至少一個第一閘極結構，其電連接到所述控制墊以充當所述氮化物基雙側電晶體的所述主閘極端子；和至少一個第二閘極結構，其電連接到所述控制墊以充當所述第一基板耦合電晶體的所述閘極端子。 The nitride-based bidirectional switching device according to claim 3, wherein the nitride-based double-sided transistor and the first substrate coupling transistor are integrated in an integrated circuit (IC) wafer, and the integrated circuit wafer It includes: a substrate; a first nitride-based semiconductor layer disposed above the substrate; a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a thickness greater than that of the first nitride-based semiconductor layer; a band gap of the base semiconductor layer; one or more gate structures disposed above the second nitride-based semiconductor layer, the one or more gate structures each comprising a gate semiconductor layer and disposed on a gate electrode layer on the gate semiconductor layer; a first passivation layer disposed on the second nitride-based semiconductor layer and covering the gate metal layer; one or more source/drain electrodes (S/D ) An electrode disposed on the second nitride-based semiconductor layer and penetrating the first passivation layer; a second passivation layer disposed on the first passivation layer and covering the S/D electrode; one or more first conductive vias disposed within the second passivation layer; a first conductive layer disposed on the second passivation layer and patterned to form one or more first conductive traces ;A third passivation layer disposed on the first conductive layer and covering the one or more conductive traces; one or more second conductive vias disposed within the third passivation layer; at least a gallium via (TGV) extending longitudinally from the second conductive layer and penetrating into the substrate; the second conductive layer disposed on the third passivation layer and patterned to form one or more second conductive traces; and a protective layer disposed over the second conductive layer and having a or A plurality of openings to expose one or more conductive pads including: a control pad configured to act as the control node; a first power/load pad configured to act as the first power /load node; a second power/load pad configured to act as the second power/load node; and a reference pad configured to act as the reference node; and; wherein the one or more S/D electrodes Comprising: at least one first S/D electrode electrically connected to the first power/load pad to serve as the first source/drain terminal and the first said drain terminal of a substrate coupled transistor; at least one second S/D electrode electrically connected to said second power/load pad to serve as said second source of said nitride-based double-sided transistor /drain terminal; at least one third S/D electrode electrically connected to the substrate and the reference pad to serve as the source terminal of the first substrate coupling transistor; and wherein said one or more a gate structure comprising: at least one first gate structure electrically connected to the control pad to serve as the main gate terminal of the nitride-based double-sided transistor; and at least one second gate structure, It is electrically connected to the control pad to serve as the gate terminal of the first substrate coupled transistor. 如請求項3所述的氮化物基雙向切換器件，其中所述氮化物基雙側電晶體、所述第一基板耦合電晶體和所述電阻器集成在積體電路(IC)晶片中，所述積體電路晶片包括：基板；第一氮化物基半導體層，其安置在所述基板上方；第二氮化物基半導體層，其安置在所述第一氮化物基半導體層上且具有大於所述第一氮化物基半導體層的帶隙的帶隙；一個或多個閘極結構，其安置在所述第二氮化物基半導體層上方，所述一個或多個閘極結構各自包含閘極半導體層和安置在所述閘極半導體層上的閘電極層；第一鈍化層，其安置在所述第二氮化物基半導體層上且覆蓋閘極金屬層；一個或多個源極/汲極(S/D)電極，其安置在所述第二氮化物基半導體層上且穿透所述第一鈍化層；第二鈍化層，其安置在所述第一鈍化層上且覆蓋所述S/D電極；一個或多個第一導電通孔，其安置在所述第二鈍化層內；第一導電層，其安置在所述第二鈍化層上且圖案化以形成一個或多個第一導電跡線；第三鈍化層，其安置在所述第一導電層上且覆蓋所述一個或多個導電跡線；一個或多個第二導電通孔，其安置在所述第三鈍化層內；至少一個鎵穿孔(TGV)，其從第二導電層縱向延伸且穿透到所述基板中；所述第二導電層，其安置在所述第三鈍化層上且圖案化以形成一個或多個第二導電跡線；和保護層，其安置在所述第二導電層上方且具有一個或多個開口以暴露一個或多個導電墊，所述一個或多個導電墊包含：控制墊，其配置成充當所述控制節點； 第一電力/負載墊，其配置成充當所述第一電力/負載節點；第二電力/負載墊，其配置成充當所述第二電力/負載節點；和參考墊，其配置成充當所述參考節點；和電阻性元件，其包括電連接到所述基板以充當所述電阻器的所述第一端子的第一端和電連接到所述參考墊以充當所述電阻器的所述第二端子的第二端；其中所述一個或多個S/D電極包含：至少一個第一S/D電極，其電連接到所述第一電力/負載墊以充當所述氮化物基雙側電晶體的所述第一源極/汲極端子和所述第一基板耦合電晶體的所述汲極端子；至少一個第二S/D電極，其電連接到所述第二電力/負載墊以充當所述氮化物基雙側電晶體的所述第二源極/汲極端子；至少一個第三S/D電極，其電連接到所述基板和所述參考墊以充當所述第一基板耦合電晶體的所述源極端子；其中所述一個或多個閘極結構包含：至少一個第一閘極結構，其電連接到所述控制墊以充當所述氮化物基雙側電晶體的所述主閘極端子；至少一個第二閘極結構，其電連接到所述控制墊以充當所述第一基板耦合電晶體的所述閘極端子。 The nitride-based bidirectional switching device according to claim 3, wherein the nitride-based double-sided transistor, the first substrate coupling transistor and the resistor are integrated in an integrated circuit (IC) wafer, The integrated circuit wafer includes: a substrate; a first nitride-based semiconductor layer disposed above the substrate; a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a thickness greater than the a band gap of the first nitride-based semiconductor layer; one or more gate structures disposed above the second nitride-based semiconductor layer, each of the one or more gate structures including a gate A semiconductor layer and a gate electrode layer disposed on the gate semiconductor layer; a first passivation layer disposed on the second nitride-based semiconductor layer and covering the gate metal layer; one or more source/drain electrodes pole (S/D) electrode, which is disposed on the second nitride-based semiconductor layer and penetrates the first passivation layer; a second passivation layer, which is disposed on the first passivation layer and covers the S/D electrode; one or more first conductive vias disposed within the second passivation layer; a first conductive layer disposed on the second passivation layer and patterned to form one or more a first conductive trace; a third passivation layer disposed on the first conductive layer and covering the one or more conductive traces; one or more second conductive vias disposed on the third Within the passivation layer; at least one gallium via (TGV) extending longitudinally from the second conductive layer and penetrating into the substrate; the second conductive layer disposed on the third passivation layer and patterned to forming one or more second conductive traces; and a protective layer disposed over the second conductive layer and having one or more openings to expose one or more conductive pads, the one or more conductive pads comprising : a control pad configured to act as said control node; a first power/load pad configured to act as the first power/load node; a second power/load pad configured to act as the second power/load node; and a reference pad configured to act as the a reference node; and a resistive element including a first end of the first terminal electrically connected to the substrate to serve as the resistor and a third terminal electrically connected to the reference pad to serve as the resistor. a two-terminal second end; wherein said one or more S/D electrodes comprise: at least one first S/D electrode electrically connected to said first power/load pad to serve as said nitride-based double sided the first source/drain terminal of the transistor and the drain terminal of the first substrate coupling transistor; at least one second S/D electrode electrically connected to the second power/load pad to serve as the second source/drain terminal of the nitride-based double-sided transistor; at least one third S/D electrode electrically connected to the substrate and the reference pad to serve as the first said source terminal of a substrate coupled transistor; wherein said one or more gate structures comprise: at least one first gate structure electrically connected to said control pad to serve as said nitride-based double-sided transistor the main gate terminal; and at least one second gate structure electrically connected to the control pad to serve as the gate terminal of the first substrate coupling transistor. 如請求項5所述的氮化物基雙向切換器件，其中所述電阻性元件安置在鄰近於所述第一氮化物基半導體層與所述第二氮化物基半導體層之間的異質結介面的二維電子氣體區處。 The nitride-based bidirectional switching device of claim 5, wherein the resistive element is disposed adjacent to the heterojunction interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer. Two-dimensional electron gas region. 如請求項5所述的氮化物基雙向切換器件，其中所述電阻性元件安 置在所述第二氮化物基半導體層上，且由與所述閘極結構相同的材料製成。 The nitride-based bidirectional switching device according to claim 5, wherein the resistive element is is disposed on the second nitride-based semiconductor layer and is made of the same material as the gate structure. 如請求項5所述的氮化物基雙向切換器件，其中所述電阻性元件安置在第一鈍化層上，且由與所述S/D電極相同的材料製成。 The nitride-based bidirectional switching device of claim 5, wherein the resistive element is disposed on the first passivation layer and is made of the same material as the S/D electrode. 如請求項5所述的氮化物基雙向切換器件，其進一步包括安置在第二鈍化層內且圖案化以形成所述電阻性元件的第三導電層。 The nitride-based bidirectional switching device of claim 5, further comprising a third conductive layer disposed within the second passivation layer and patterned to form the resistive element. 如請求項5所述的氮化物基雙向切換器件，其中所述電阻性元件安置在所述第二鈍化層上，且由與所述第一導電跡線相同的材料製成。 The nitride-based bidirectional switching device of claim 5, wherein the resistive element is disposed on the second passivation layer and is made of the same material as the first conductive trace. 如請求項5所述的氮化物基雙向切換器件，其中所述電阻性元件安置在第三鈍化層上，且由與所述第二導電跡線相同的材料製成。 The nitride-based bidirectional switching device of claim 5, wherein the resistive element is disposed on the third passivation layer and is made of the same material as the second conductive trace. 一種用於製造如請求項1所述的氮化物基雙向切換器件的方法，所述方法包括：在基板之上形成第一氮化物基半導體層；在所述第一氮化物基半導體層上形成第二氮化物基半導體層；將閘極半導體層安置在所述第二氮化物基半導體層上，且將閘電極層安置在所述閘極半導體層上，且使所述閘極半導體層和所述閘電極層圖案化以形成一個或多個閘極結構；在所述第二氮化物基半導體層上形成第一鈍化層以覆蓋所述閘極結構；在所述第一鈍化層中形成一個或多個開口以暴露所述第二氮化物基半導體層的一些區，安置S/D電極層以覆蓋所述第一鈍化層和所述第二氮化物基半導體層 的暴露區，且使所述S/D電極層圖案化以形成穿透所述第一鈍化層且與所述第二氮化物基半導體層接觸的一個或多個S/D電極；在所述第一鈍化層上形成第二鈍化層以覆蓋所述S/D電極；在所述第二鈍化層內形成一個或多個第一導電通孔；在所述第二鈍化層上形成第一導電層且使所述第一導電層圖案化以形成一個或多個第一圖案化導電跡線；在所述第一導電層上形成第三鈍化層以覆蓋所述一個或多個導電跡線；在所述第三鈍化層內形成一個或多個第二導電通孔；形成從第二導電層縱向延伸且穿透到所述基板中的至少一個鎵穿孔(TGV)；在所述第三鈍化層上形成所述第二導電層且使所述第二導電層圖案化以形成一個或多個第二圖案化導電跡線；在所述第二導電層上方形成保護層且使所述保護層圖案化以形成一個或多個開口以暴露一個或多個導電墊，所述一個或多個導電墊包含控制墊、第一電力/負載墊、第二電力/負載墊和參考墊，其中，所述控制墊充當所述控制節點，所述第一電力/負載墊充當所述第一電力/負載節點，所述第二電力/負載墊充當所述第二電力/負載節點，所述參考墊充當所述參考節點。 A method for manufacturing the nitride-based bidirectional switching device according to claim 1, the method comprising: forming a first nitride-based semiconductor layer on a substrate; forming a first nitride-based semiconductor layer on the first nitride-based semiconductor layer. a second nitride-based semiconductor layer; disposing a gate semiconductor layer on the second nitride-based semiconductor layer, disposing a gate electrode layer on the gate semiconductor layer, and making the gate semiconductor layer and The gate electrode layer is patterned to form one or more gate structures; a first passivation layer is formed on the second nitride-based semiconductor layer to cover the gate structure; and a first passivation layer is formed in the first passivation layer. One or more openings to expose some areas of the second nitride-based semiconductor layer, and an S/D electrode layer disposed to cover the first passivation layer and the second nitride-based semiconductor layer The exposed area, and patterning the S/D electrode layer to form one or more S/D electrodes penetrating the first passivation layer and contacting the second nitride-based semiconductor layer; in the A second passivation layer is formed on the first passivation layer to cover the S/D electrode; one or more first conductive vias are formed in the second passivation layer; a first conductive via is formed on the second passivation layer. layer and patterning the first conductive layer to form one or more first patterned conductive traces; forming a third passivation layer on the first conductive layer to cover the one or more conductive traces; forming one or more second conductive vias in the third passivation layer; forming at least one gallium through hole (TGV) longitudinally extending from the second conductive layer and penetrating into the substrate; in the third passivation layer forming the second conductive layer over the second conductive layer and patterning the second conductive layer to form one or more second patterned conductive traces; forming a protective layer over the second conductive layer and causing the protective layer to Patterning to form one or more openings to expose one or more conductive pads including a control pad, a first power/load pad, a second power/load pad, and a reference pad, wherein The control pad serves as the control node, the first power/load pad serves as the first power/load node, the second power/load pad serves as the second power/load node, and the reference pad serves as The reference node. 如請求項12所述的方法，其中，所述第一電位穩定元件為第一基板耦合電晶體，所述第一基板耦合電晶體具有連接到所述控制節點的閘極端子、連接到所述第一電力/負載節點的汲極端子、連接到所述主基板的源極端子；所述方法進一步包括通過以下操作構造所述氮化物基雙側電晶體和所述第一基板耦合電晶體：將至少一個第一S/D電極電連接到所述第一電力/負載墊以形成所述氮化物 基雙側電晶體的第一S/D端子和所述第一基板耦合電晶體的汲極端子；將至少一個第二S/D電極電連接到所述第二電力/負載墊以形成所述氮化物基雙側電晶體的第二S/D端子；將至少一個第三S/D電極電連接到所述基板和所述參考墊以形成所述第一基板耦合電晶體的源極端子；將至少一個第一閘極結構電連接到所述控制墊以形成所述氮化物基雙側電晶體的主閘極端子；和將至少一個第二閘極結構電連接到所述控制墊以形成所述第一基板耦合電晶體的閘極端子。 The method of claim 12, wherein the first potential stabilizing element is a first substrate coupling transistor having a gate terminal connected to the control node, a gate terminal connected to the control node, and a gate terminal connected to the control node. The drain terminal of the first power/load node is connected to the source terminal of the main substrate; the method further includes constructing the nitride-based double-sided transistor and the first substrate coupling transistor by: electrically connecting at least one first S/D electrode to the first power/load pad to form the nitride a first S/D terminal of a base double-sided transistor and a drain terminal of said first substrate coupled transistor; electrically connecting at least one second S/D electrode to said second power/load pad to form said a second S/D terminal of a nitride-based double-sided transistor; electrically connecting at least one third S/D electrode to the substrate and the reference pad to form a source terminal of the first substrate-coupled transistor; electrically connecting at least one first gate structure to the control pad to form a main gate terminal of the nitride-based double-sided transistor; and electrically connecting at least one second gate structure to the control pad to form The first substrate couples the gate terminal of the transistor. 如請求項12所述的方法，其進一步包括通過圖案化鄰近於所述第一氮化物基半導體層和所述第二氮化物基半導體層之間的異質結介面的二維電子氣體(2DEG)區形成一個或多個電阻性元件。 The method of claim 12, further comprising patterning a two-dimensional electron gas (2DEG) adjacent to the heterojunction interface between the first nitride-based semiconductor layer and the second nitride-based semiconductor layer. The regions form one or more resistive elements. 如請求項14所述的方法，其中，所述第一電位穩定元件為第一基板耦合電晶體，所述第一基板耦合電晶體具有連接到所述控制節點的閘極端子、連接到所述第一電力/負載節點的汲極端子、連接到所述主基板的源極端子，所述第二電位穩定元件為電阻器，所述電阻器具有通過所述參考節點連接到所述主基板的第一端子和連接到接地的第二端子；所述方法進一步包括通過以下操作構造所述氮化物基雙側電晶體，所述第一基板耦合電晶體和所述電阻器：將至少一個第一S/D電極電連接到所述第一電力/負載墊以形成所述氮化物基雙側電晶體的第一S/D端子和所述第一基板耦合電晶體的汲極端子；將至少一個第二S/D電極電連接到所述第二電力/負載墊以形成所述氮化物 基雙側電晶體的第二S/D端子；將至少一個第三S/D電極電連接到所述基板以形成所述第一基板耦合電晶體的源極端子；將至少一個第一閘極結構電連接到所述控制墊以形成所述氮化物基雙側電晶體的主閘極端子；將至少一個第二閘極結構電連接到所述控制墊以形成所述第一基板耦合電晶體的閘極端子；將一個所述電阻性元件的第一端電連接到所述基板以形成所述電阻器的第一端子；和將所述電阻性元件的第二端電連接到所述參考墊以形成所述電阻器的第二端子。 The method of claim 14, wherein the first potential stabilizing element is a first substrate coupling transistor having a gate terminal connected to the control node, a gate terminal connected to the control node, and a gate terminal connected to the control node. The drain terminal of the first power/load node is connected to the source terminal of the main substrate, and the second potential stabilizing element is a resistor having a terminal connected to the main substrate through the reference node. a first terminal and a second terminal connected to ground; the method further includes constructing the nitride-based double-sided transistor, the first substrate coupling transistor and the resistor by: connecting at least one first S/D electrodes are electrically connected to the first power/load pad to form a first S/D terminal of the nitride-based double-sided transistor and a drain terminal of the first substrate coupling transistor; connecting at least one A second S/D electrode is electrically connected to the second power/load pad to form the nitride a second S/D terminal of the base double-sided transistor; electrically connecting at least one third S/D electrode to the substrate to form a source terminal of the first substrate-coupled transistor; connecting at least one first gate structures electrically connected to the control pads to form main gate terminals of the nitride-based double sided transistor; at least one second gate structure electrically connected to the control pads to form the first substrate coupled transistor a gate terminal; electrically connecting a first end of one of the resistive elements to the substrate to form a first terminal of the resistor; and electrically connecting a second end of the resistive element to the reference pad to form the second terminal of the resistor.
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115863335B (en) * 2021-05-25 2023-12-22 英诺赛科(苏州)科技有限公司 Nitride-based bidirectional switching device and method of manufacturing the same
CN115769379B (en) * 2022-08-25 2024-03-08 英诺赛科（珠海）科技有限公司 Nitride-based electronic device with wafer-level dynamic on-resistance monitoring capability

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120217542A1 (en) * 2009-11-30 2012-08-30 Panasonic Corporation Bidirectional switch
US20190006499A1 (en) * 2016-03-15 2019-01-03 Panasonic Corporation Bidirectional switch
TW202004199A (en) * 2018-03-26 2020-01-16 百慕達商亞德諾半導體環球無限公司 Electrical overstress monitor/protection device
TW202312430A (en) * 2021-05-25 2023-03-16 大陸商英諾賽科（蘇州）科技有限公司 Nitride-based semiconductor bidirectional switching device and method for manufacturing the same

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4270336B2 (en) * 1999-05-27 2009-05-27 株式会社ルネサステクノロジ Semiconductor integrated circuit device
US6936898B2 (en) * 2002-12-31 2005-08-30 Transmeta Corporation Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US7550781B2 (en) * 2004-02-12 2009-06-23 International Rectifier Corporation Integrated III-nitride power devices
US7426128B2 (en) * 2005-07-11 2008-09-16 Sandisk 3D Llc Switchable resistive memory with opposite polarity write pulses
JP5558714B2 (en) * 2005-09-21 2014-07-23 インターナショナル レクティフィアー コーポレイション Semiconductor package
JP2008153748A (en) * 2006-12-14 2008-07-03 Matsushita Electric Ind Co Ltd Bidirectional switch and method of driving bidirectional switch
JP2008235625A (en) * 2007-03-22 2008-10-02 Seiko Epson Corp Semiconductor integrated circuit
US7737501B2 (en) * 2007-07-11 2010-06-15 International Business Machines Corporation FinFET SRAM with asymmetric gate and method of manufacture thereof
JP4874887B2 (en) * 2007-07-20 2012-02-15 株式会社東芝 High frequency semiconductor switch device
JP5369434B2 (en) * 2007-12-21 2013-12-18 サンケン電気株式会社 Bidirectional switch
JP2011182591A (en) * 2010-03-02 2011-09-15 Panasonic Corp Semiconductor device
JP2012004253A (en) * 2010-06-15 2012-01-05 Panasonic Corp Bidirectional switch, two-wire ac switch, switching power circuit, and method for driving bidirectional switch
US20140374766A1 (en) * 2013-06-20 2014-12-25 Texas Instruments Incorporated Bi-directional gallium nitride switch with self-managed substrate bias
US9130026B2 (en) * 2013-09-03 2015-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Crystalline layer for passivation of III-N surface
US9472625B2 (en) * 2014-03-17 2016-10-18 Infineon Technologies Austria Ag Operational Gallium Nitride devices
US9425301B2 (en) * 2014-04-30 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Sidewall passivation for HEMT devices
US9356017B1 (en) * 2015-02-05 2016-05-31 Infineon Technologies Austria Ag Switch circuit and semiconductor device
DE102015117394B4 (en) * 2015-10-13 2020-06-18 Infineon Technologies Austria Ag Semiconductor device
DE102015117395A1 (en) 2015-10-13 2017-04-13 Infineon Technologies Austria Ag Circuit, semiconductor device and method
US9837522B2 (en) * 2015-11-02 2017-12-05 Infineon Technologies Austria Ag III-nitride bidirectional device
US20180076310A1 (en) * 2016-08-23 2018-03-15 David Sheridan Asymmetrical blocking bidirectional gallium nitride switch
DK3343763T3 (en) * 2016-12-29 2020-01-27 Gn Hearing As OUTPUT DRIVER INCLUDING MOS CONTACTS WITH ADJUSTABLE BACK GATE Bias
US10224924B1 (en) * 2017-08-22 2019-03-05 Infineon Technologies Austria Ag Bidirectional switch with passive electrical network for substrate potential stabilization
US11862630B2 (en) * 2018-04-23 2024-01-02 Infineon Technologies Austria Ag Semiconductor device having a bidirectional switch and discharge circuit
CN109817710A (en) * 2018-12-29 2019-05-28 英诺赛科（珠海）科技有限公司 High electron mobility transistor and its manufacturing method
WO2020191357A1 (en) * 2019-03-21 2020-09-24 Transphorm Technology, Inc. Integrated design for iii-nitride devices
US10818786B1 (en) * 2019-05-07 2020-10-27 Cambridge Gan Devices Limited III-V semiconductor device with integrated protection functions
CN112490243B (en) * 2019-09-12 2023-09-12 联华电子股份有限公司 Three-dimensional semiconductor structure and manufacturing method thereof
WO2021072700A1 (en) * 2019-10-17 2021-04-22 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices with backside isolation structures
WO2021094878A1 (en) * 2019-11-15 2021-05-20 株式会社半導体エネルギー研究所 Semiconductor device
CN115152036A (en) * 2020-02-21 2022-10-04 株式会社半导体能源研究所 Semiconductor device, power storage device, battery control circuit, electronic component, vehicle, and electronic apparatus
CN112154542B (en) * 2020-04-29 2023-12-08 英诺赛科（珠海）科技有限公司 Electronic device
CN113875019A (en) * 2020-04-30 2021-12-31 英诺赛科(苏州)半导体有限公司 Semiconductor device and method of manufacturing semiconductor device
CN112640127B (en) * 2020-11-30 2022-09-06 英诺赛科(苏州)半导体有限公司 Semiconductor device and method for manufacturing the same
CN112771677A (en) * 2020-12-18 2021-05-07 英诺赛科(苏州)科技有限公司 Semiconductor device and method of manufacturing semiconductor device
CN112789732B (en) * 2020-12-25 2022-08-16 英诺赛科(苏州)科技有限公司 Semiconductor device and method for manufacturing the same
CN112750898A (en) * 2021-01-07 2021-05-04 王琮 Gallium nitride-based semiconductor power device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120217542A1 (en) * 2009-11-30 2012-08-30 Panasonic Corporation Bidirectional switch
US20190006499A1 (en) * 2016-03-15 2019-01-03 Panasonic Corporation Bidirectional switch
TW202004199A (en) * 2018-03-26 2020-01-16 百慕達商亞德諾半導體環球無限公司 Electrical overstress monitor/protection device
TW202312430A (en) * 2021-05-25 2023-03-16 大陸商英諾賽科（蘇州）科技有限公司 Nitride-based semiconductor bidirectional switching device and method for manufacturing the same

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TWI809697B (en) 2023-07-21
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