TWI830673B - Positioning device for wafer - Google Patents
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- TWI830673B TWI830673B TW112123185A TW112123185A TWI830673B TW I830673 B TWI830673 B TW I830673B TW 112123185 A TW112123185 A TW 112123185A TW 112123185 A TW112123185 A TW 112123185A TW I830673 B TWI830673 B TW I830673B
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- 238000010884 ion-beam technique Methods 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 120
- 150000002500 ions Chemical class 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004969 ion scattering spectroscopy Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
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- 238000001228 spectrum Methods 0.000 description 2
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- 238000000844 transformation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
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- 230000014509 gene expression Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- -1 helium ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J11/00—Manipulators not otherwise provided for
- B25J11/0095—Manipulators transporting wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J15/00—Gripping heads and other end effectors
- B25J15/06—Gripping heads and other end effectors with vacuum or magnetic holding means
- B25J15/0608—Gripping heads and other end effectors with vacuum or magnetic holding means with magnetic holding means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J17/00—Joints
- B25J17/02—Wrist joints
- B25J17/0258—Two-dimensional joints
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J9/00—Programme-controlled manipulators
- B25J9/02—Programme-controlled manipulators characterised by movement of the arms, e.g. cartesian coordinate type
- B25J9/04—Programme-controlled manipulators characterised by movement of the arms, e.g. cartesian coordinate type by rotating at least one arm, excluding the head movement itself, e.g. cylindrical coordinate type or polar coordinate type
- B25J9/041—Cylindrical coordinate type
- B25J9/042—Cylindrical coordinate type comprising an articulated arm
- B25J9/044—Cylindrical coordinate type comprising an articulated arm with forearm providing vertical linear movement
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
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- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Immunology (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
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Abstract
本發明提供一種晶圓機械手臂,其包含一個底座部、一個第一臂部、一個第二臂部、一個晶圓配置部以及一個控制部,該第一臂部係可轉動地設置在該底座部的一側,該第二臂部係可轉動地設置在該第一臂部的另一側,其中,該第一臂部與該第二臂部二者構件至少不會呈現部分重疊,該晶圓配置部係可轉動地設置在該第二臂部的另一側,且該晶圓配置部係用以固定晶圓,該控制部係各別電性連接該底座部、該第一臂部與該第二臂部,使該底座部、該第一臂部與該第二臂部三者中至少一個可電性接收該控制部所產生的一個移動訊號而產生運動。The invention provides a wafer robot arm, which includes a base part, a first arm part, a second arm part, a wafer arranging part and a control part. The first arm part is rotatably arranged on the base. On one side of the first arm part, the second arm part is rotatably disposed on the other side of the first arm part, wherein the components of the first arm part and the second arm part do not at least partially overlap, and the The wafer placement part is rotatably provided on the other side of the second arm part, and the wafer placement part is used to fix the wafer. The control part is electrically connected to the base part and the first arm respectively. part and the second arm part, so that at least one of the base part, the first arm part and the second arm part can electrically receive a movement signal generated by the control part to generate movement.
Description
本發明係與晶圓機械手臂的技術相關。The present invention relates to wafer robot arm technology.
特別是指,可依照實際需求而用以改變晶圓位置和角度,進而處理300mm晶圓尺寸的一種晶圓機械手臂。In particular, it refers to a wafer robot arm that can be used to change the position and angle of the wafer according to actual needs to process 300mm wafer sizes.
在此先行說明,以下所描述的先前技術是為幫助理解本發明的理論,而非聚焦在描述現有技術。It should be noted in advance that the prior art described below is to help understand the theory of the present invention and is not focused on describing the prior art.
現有MEIS(Medium Energy Ion Scattering)是將中能量場域的離子照射於待測樣本(或稱工件物、靶材等)後,進而作為分析的一種分析樣本技術;MEIS 係為將具有特定能量的離子(例如:約 100 KeV 的氦離子)照射於樣本後,該離子會經由待測樣本的原子核而散射並隨著碰撞的原子核種類、深度而減少能量,接著,隨即將其進行精密分析後,進而找出待測樣本基礎特性的一種方式。The existing MEIS (Medium Energy Ion Scattering) is a sample analysis technology that irradiates ions in the medium energy field onto the sample to be tested (or workpiece, target, etc.) and then analyzes it; MEIS is a sample analysis technology that irradiates ions with specific energy. After ions (for example: helium ions of about 100 KeV) are irradiated on the sample, the ions will be scattered through the nuclei of the sample to be measured and reduce their energy depending on the type and depth of the colliding nuclei. Then, after precise analysis, A way to find out the basic characteristics of the sample to be tested.
然而,現有MEIS方式在離子射入於待測樣本,或是射入的離子在散射時,一部分離子會有中和反應而需經過方程式將其調整,中和程度會隨著待測樣本的結構及組成而不同,造成在分析上的準確度受限,因此,近期將MEIS方式進行改良的TOF-MEIS方式頗受到矚目。However, in the existing MEIS method, when ions are injected into the sample to be measured, or when the injected ions are scattered, some ions will have a neutralization reaction and need to be adjusted through the equation. The degree of neutralization will depend on the structure of the sample to be measured. Due to differences in structure and composition, the accuracy of analysis is limited. Therefore, the TOF-MEIS method, which is an improved MEIS method, has recently attracted much attention.
而TOF-MEIS為Time-Of-Flight Medium Energy Ion Scattering之縮寫,即為散射的中能量離子之飄散時間(或稱飛行時間),是利用經過「中能量離子在散射光譜的飄散時間(或稱飛行時間)(Time-Of-Flight Medium Energy Ion Scattering)」進行分析的方式,而被中和的粒子也是依據彈性碰撞能量以及動量守恆定律,在同一時間可由探測器探測到之原理,也就是將所量測散射離子之飄散時間(或稱飛行時間)用以作為分析散射能量的方式,此TOF-MEIS方式不僅可以同時量測整個能量頻譜,且不需區分散射的離子能量域,也不需要利用方程式等,相較於現有的MEIS方式更有效率,其優點是更為準確的分析待測樣本,因此,對TOF-MEIS方式的期待越來越高。TOF-MEIS is the abbreviation of Time-Of-Flight Medium Energy Ion Scattering, which is the drift time (or flight time) of scattered medium energy ions. It is based on the "drift time (or flight time) of medium energy ions in the scattering spectrum". "Time-Of-Flight Medium Energy Ion Scattering" analysis method, and the neutralized particles can also be detected by the detector at the same time based on the elastic collision energy and the law of conservation of momentum, that is, the neutralized particles can be detected by the detector at the same time. The measured drift time (or flight time) of scattered ions is used as a method to analyze the scattered energy. This TOF-MEIS method can not only measure the entire energy spectrum at the same time, but also does not need to distinguish the scattered ion energy domain. The use of equations, etc. is more efficient than the existing MEIS method, and its advantage is more accurate analysis of the sample to be tested. Therefore, expectations for the TOF-MEIS method are getting higher and higher.
另外,待測樣本會依其種類擁有固有的結晶度,而從特定方向照射離子時,會有良率變高或變低的現象出現,而為解決此現象,需要改變照射離子的角度或連續改變待測樣本的位置後始能照射離子。In addition, the sample to be tested will have inherent crystallinity depending on its type. When ions are irradiated from a specific direction, the yield will become higher or lower. To solve this phenomenon, it is necessary to change the angle of irradiation of ions or continuously Ions can only be irradiated after changing the position of the sample to be measured.
而通常在透過此TOF-MEIS進行分析時,其所對應使用的晶片形態為小型待測樣本來進行分析固定待測樣本時,也會配合製作小型的機械手臂,如此一來,反應室也可以製造成為較為小型的。Usually when analyzing through this TOF-MEIS, the corresponding wafer form is a small sample to be tested. When the sample to be tested is fixed for analysis, a small robotic arm is also made. In this way, the reaction chamber can also Made to be smaller.
然而,如果待測樣本的尺寸很大,為使離子束可照射到待測樣本的全區域,則必須要製造大型反應室,如此一來,為讓整體待測腔體維持一定的真空度,其成本也將大幅上升;此外,若要製造一個足以符合處理待測樣本的大型機械手臂,也是相對困難。However, if the size of the sample to be tested is very large, in order for the ion beam to irradiate the entire area of the sample to be tested, a large reaction chamber must be manufactured. In this way, in order to maintain a certain degree of vacuum in the entire cavity to be tested, Its cost will also increase significantly; in addition, it is relatively difficult to manufacture a large-scale robotic arm that is large enough to handle the samples to be tested.
另外,變更待測樣本的位置時,用來固定樣本的機械手臂,在操作上也無法順暢運作,使移動待測樣本的機械手臂亦會纏繞在一起進而出現干涉的問題。In addition, when the position of the sample to be tested is changed, the robotic arm used to fix the sample cannot operate smoothly, and the robotic arms that move the sample to be tested will also become entangled, causing interference problems.
本發明所欲解決之問題在於,如何藉由本發明所揭露的一個實施例中之晶圓機械手臂,當待測樣品(或晶圓)尺寸很大時,要如何藉由多軸方式移動,且如何應用在小型的晶圓機械手臂上。The problem to be solved by the present invention is how to use the wafer robot arm in an embodiment disclosed by the present invention to move the sample (or wafer) in a multi-axis manner when the size of the sample (or wafer) to be tested is large, and How to apply it to a small wafer robot arm.
此外,如何藉由本發明所揭露的一個實施例中之晶圓機械手臂,在進行變更待測樣品的位置、角度和傾斜度時,也不會造成干涉現象。In addition, how to use the wafer robot arm in an embodiment disclosed in the present invention to change the position, angle and inclination of the sample to be tested without causing interference.
本發明所欲解決前述問題之技術手段在於,依據本發明所揭露的一個實施例中之晶片機械手臂,其包含一個底座部、一個第一臂部、一個第二臂部、一個晶圓配置部以及一個控制部,該第一臂部的一端係可轉動地樞設在該底座部的一側,該第二臂部的一端係可轉動地樞設在該第一臂部的另一端,且該第一臂部與該第二臂部二者構件之間不會呈現部分重疊,該晶圓配置部係可轉動地樞設在該第二臂部的另一端,且該晶圓配置部係用以承載一個晶圓,該控制部各別電性連接該底座部、該第一臂部與該第二臂部,使該底座部、該第一臂部與該第二臂部三者中至少其中一個可電性接收該控制部所產生的一個移動訊號而產生運動。The technical means to solve the aforementioned problems of the present invention is that according to an embodiment of the present invention, a wafer robot arm includes a base part, a first arm part, a second arm part, and a wafer placement part. and a control part, one end of the first arm part is rotatably pivoted on one side of the base part, one end of the second arm part is rotatably pivoted on the other end of the first arm part, and There will be no partial overlap between the first arm part and the second arm part. The wafer arranging part is rotatably pivoted at the other end of the second arm part, and the wafer arranging part is Used to carry a wafer, the control part is electrically connected to the base part, the first arm part and the second arm part respectively, so that the base part, the first arm part and the second arm part are At least one of them can electrically receive a movement signal generated by the control unit to generate movement.
其中,該第一臂部係更包含有一個第一支臂以及設置在該第一支臂一側的一個第一轉動單元,該第一支臂係具有一預定長度並界定為一第一長度;其中,該第二臂部係更包含有一個第二支臂以及一個第二轉動單元,該第二臂部之第二支臂的一側係連接於該第一臂部之第一轉動單元,該第二支臂的相對一側係設置該第二轉動單元,該第二支臂係具有一預定長度並界定為一第二長度。Wherein, the first arm part further includes a first arm and a first rotation unit disposed on one side of the first arm. The first arm system has a predetermined length and is defined as a first length. ; Wherein, the second arm part further includes a second arm and a second rotating unit, and one side of the second arm of the second arm part is connected to the first rotating unit of the first arm part. , the second rotating unit is provided on the opposite side of the second arm, and the second arm has a predetermined length and is defined as a second length.
其中,該晶圓機械手臂係更包含有一個離子束照射器,且該晶圓配置部係具有一假想中心點;其中,自該離子束照射器照射至相對於該晶圓配置部之晶圓處係界定為一基準位置;其中,自該基準位置至該晶圓配置部二者之間的長度距離係界定為一間隔長度。Wherein, the wafer robot arm further includes an ion beam irradiator, and the wafer placement part has an imaginary center point; wherein, the wafer is irradiated from the ion beam irradiator relative to the wafer placement part The position is defined as a reference position; wherein, the length distance from the reference position to the wafer placement portion is defined as an interval length.
其中,自該第一臂部之第一支臂的一側至該基準位置二者之間的距離係界定為一假想長度;其中,該第一長度與該第二長度二者之總和係界定為一第一值,該間隔長度與該假想長度二者之總和係界定為一第二值,且該第一值與該第二值二者相減後所得差值為正數。Wherein, the distance from one side of the first arm of the first arm part to the reference position is defined as an imaginary length; wherein, the sum of the first length and the second length is defined as is a first value, the sum of the interval length and the imaginary length is defined as a second value, and the difference obtained by subtracting the first value and the second value is a positive number.
其中,該第一長度與該假想長度二者之總和係界定為一第三值,該第二長度與該間隔長度二者之總和係界定為一第四值,且該第三值與該第四值二者相減後所得差值為正數。Wherein, the sum of the first length and the imaginary length is defined as a third value, the sum of the second length and the interval length is defined as a fourth value, and the third value and the third value are defined as a fourth value. The difference obtained after subtracting the four values is a positive number.
其中,該晶圓機械手臂係更包含有一個自行轉動單元且連接於該底座部的另一側,使該底座部可透過該自行轉動單元呈現傾斜轉動。Wherein, the wafer robot arm further includes a self-rotating unit and is connected to the other side of the base part, so that the base part can tilt and rotate through the self-rotating unit.
其中,該晶圓機械手臂係更包含有一個高度調整單元且連接於該底座部的另一側,使該底座部可透過該高度調整單元進行高度調整。Wherein, the wafer robot arm further includes a height adjustment unit and is connected to the other side of the base part, so that the height of the base part can be adjusted through the height adjustment unit.
其中,該第一臂部之第一轉動單元的角度係自-90度至+90度。Wherein, the angle of the first rotation unit of the first arm is from -90 degrees to +90 degrees.
其中,該晶圓配置部係具有產生吸附晶圓之靜電來用以固定晶圓。Wherein, the wafer arranging part generates static electricity to attract the wafer to fix the wafer.
本發明對照先前技術之功效在於,依據前述本發明所揭露的一個實施例中之晶片機械手臂,可將待測晶圓移動或轉動至各種方向,而其體積亦可視實際待測晶圓的尺寸客製化為小型體積。The effect of the present invention compared with the prior art is that according to the wafer robot arm in one embodiment disclosed in the present invention, the wafer to be tested can be moved or rotated to various directions, and its volume can also be determined according to the size of the actual wafer to be tested. Customized into small size.
此外,依據前述本發明所揭露之晶圓機械手臂及其子構件之間係設有符合啟動時的設定條件之組件,因此,在改變晶圓的位置時,各構件之間並不會發生干涉現象。In addition, according to the foregoing disclosure of the present invention, there are components between the wafer robot arm and its sub-components that meet the set conditions at startup. Therefore, when changing the position of the wafer, there will be no interference between the components. phenomenon.
本發明可以有各樣的變換,亦具有多種實施方式,因此,藉由本發明之各個具體實施例詳細說明;然而,這皆非用以作為本發明限制於此特定實施例,並希望能理解為本發明是包含前述特定實施例以及本發明之思維及其技術特徵範圍內的所有變換、等同物或替代物。The present invention can have various transformations and various implementation modes. Therefore, each specific embodiment of the present invention is described in detail; however, this is not intended to limit the present invention to this specific embodiment, and it is hoped that it can be understood as The present invention includes the aforementioned specific embodiments and all transformations, equivalents, or substitutions within the scope of the spirit and technical characteristics of the present invention.
本發明之各個實施例中所使用之詞彙,係僅用於描述各個具體實施例,皆並非用以作為限制本發明之申請專利範圍,合先敘明。此外,單數的表達係可從前後段落中得知,除非另有不同說明,否則皆是包含複數。而在本發明之各個實施例中或申請專利範圍中,當出現“包含”或是“具有”等詞彙時,係僅是指本發明之專利說明書中所描述的特徵、數字、步驟、動作、構成要素、組件或組合的存在,並非用用以排除一個或多個不同技術特徵、數字、步驟、動作、構成要素、組件或其組合的存在或添加的可能性。The vocabulary used in each embodiment of the present invention is only used to describe each specific embodiment, and is not used to limit the patentable scope of the present invention. Furthermore, expressions in the singular number will be understood from the preceding and following paragraphs and shall include the plural unless otherwise stated. In various embodiments of the present invention or in the scope of the patent application, when words such as "include" or "have" appear, they only refer to the features, numbers, steps, actions, etc. described in the patent specification of the present invention. The existence of constituent elements, components or combinations is not used to exclude the possibility of the existence or addition of one or more different technical features, numbers, steps, actions, constituent elements, components or combinations thereof.
其後,係將結合附圖詳細說明出本發明之各個具體實施例,且在附圖中相同的構成要素,盡可能用以相同的符號進行標示;此外,會致使本發明之主旨模糊不清的已知功能和組成相關說明就先行省略,同樣的,若在附圖中有些構成要素可能被誇大標示將予以省略或輔以概略性之標示,合先敘明。Thereafter, various specific embodiments of the present invention will be described in detail with reference to the accompanying drawings, and the same components in the drawings will be labeled with the same symbols as much as possible; in addition, this will make the gist of the present invention unclear. Relevant descriptions of known functions and compositions will be omitted first. Similarly, if some components may be exaggerated in the drawings, they will be omitted or supplemented with schematic labels and will be described first.
請先參閱圖1,係為本發明之一個實施例的側視示意圖。Please refer to FIG. 1 first, which is a schematic side view of an embodiment of the present invention.
依據本發明之該一實施例中所揭露的一個晶圓機械手臂係包含有設置在一個反應室10之中的一個底座部100、一個第一臂部200、一個第二臂部300、一個晶圓配置部400以及一個控制部500。此外,依據本發明之該一實施例中所揭露的一個晶圓機械手臂係更包含有設置在該反應室10之外的一個自行轉動單元600、一個高度調整單元700以及一個水平調整單元800。其中,該晶圓機械手臂之控制部500係各別電性連接並且各別電性控制於該底座部100、該第一臂部200、該第二臂部300、該晶圓配置部400、該自行轉動單元600、該高度調整單元700以及該水平調整單元800。A wafer robot arm disclosed in this embodiment of the present invention includes a
而該晶圓機械手臂之底座部100於本實施例中係具有作為支撐整體的骨架之功效,且該底座部100係更包含有一個底座手臂110以及一個底座轉動單元120。In this embodiment, the
而由於該晶圓機械手臂之底座部100的該底座手臂110係以貫穿該反應室10內外的方式設置,因此,該底座部100之底座手臂110的其中一部分是位在該反應室10內,其另一部份則位在該反應室10外。Since the
請再參閱圖1,該晶圓機械手臂之底座部100的該底座手臂110係至少有一面是呈平坦的較為理想,於本實施例中,該底座部100之底座手臂110的上方是呈現平坦的,如此一來,即可在該底座手臂110 的平坦面上設置該第一臂部200等組件。Please refer to FIG. 1 again. It is ideal that at least one side of the
承前所述,而該晶圓機械手臂之底座部100的該底座轉動單元120係可轉動地樞設在該底座手臂110的其中一端,且該底座轉動單元120將於後續段落中繼續說明如何與固定在該晶圓配置部400上的晶圓或待測樣品配合運作。而又如圖1所示,該底座轉動單元120係可用以樞設於偏向該底座手臂110右側的位置,且該底座轉動單元120係可依預定設定的角度進行轉動,而於本實施例中,該底座轉動單元120係可轉動的角度約為180度,即當將該底座轉動單元120係以0度角度做為基準時,即可自-90度轉動到+90度。As mentioned above, the
承前所述,而該晶圓機械手臂之第一臂部200係可轉動地樞設在該底座部100的一側,較佳地,該第一臂部200係可連接於該底座部100之底座轉動單元120,如此一來,該第一臂部200係可隨著該底座轉動單元120 的轉動而隨之轉動。此外,該晶圓機械手臂之第一臂部200係更包含有一個第一支臂210以及一個第一轉動單元220。As mentioned above, the
承前所述,而該第一臂部200之第一支臂210也像該底座部100之底座手臂110一樣係至少有一面是呈平坦的(例如:上方),如此一來,當該晶圓機械手臂之第二臂部300係設置在該第一臂部200之第一支臂210的上方平坦面時,係可具有強化支撐該第二臂部300之功效。As mentioned above, the
承前所述,而該第一臂部200之第一支臂210係具有一個預定長度,且假定該第一支臂210的預定長度為第一長度,於本實施例中,該第一支臂210之第一長度係約150mm。此外,該第一支臂210之第一長度的描述將於後續段落搭配圖2來輔助解釋。As mentioned above, the
承前所述,而該晶圓機械手臂之第一臂部200的該第一轉動單元220係設置在該第一支臂210的另一側,於本實施例中,該第一臂部200之第一轉動單元220亦可如圖1中所示,係以該底座部100之底座轉動單元120作為基準而呈對角線方向設置於該第一臂部200之第一支臂210的另一側,而不是設置在相對應於該底座部100之底座轉動單元120的同一軸向上,簡言之,該第一臂部200之第一轉動單元220係可設置在該第一臂部200上的一端。此外,於本實施例中,該第一臂部200之第一轉動單元220係可轉動的角度約為180度,即當將該第一臂部200之第一轉動單元220係以0度角度做為基準時,即可自-90度轉動到+90度。As mentioned above, the
承前所述,而該晶圓機械手臂之第二臂部300係可轉動地樞設在該第一臂部200的一側,較佳地,該第二臂部300係可連接在該第一臂部200之第一轉動單元220,如此一來,該第二臂部300係可隨著該第一轉動單元220的轉動而隨之轉動。此外,該晶圓機械手臂之第二臂部300係更包含有一個第二支臂310以及一個第二轉動單元320。As mentioned above, the
承前所述,同樣地,該晶圓機械手臂之第二臂部300的該第二支臂310會與第一臂部200之第一支臂210一樣係至少有一面是呈平坦的,如此一來,於後續段落所揭露的該晶圓配置部400係可設置在該第二臂部300之第二支臂310呈平坦面上。而由於該第二臂部300之第二支臂310的下方係對應連接於該第一臂部200之第一轉動單元220的位置,使該第二臂部300之第二支臂310係可隨著該第一轉動單元220的轉動而隨之轉動。As mentioned above, similarly, the
承前所述,而該第二臂部300之第二支臂310係具有一個預定長度,且假定該第二支臂310的預定長度為第二長度,其中,該第二臂部300之第二支臂310的長度係不相同於該第一臂部200之第一支臂210的長度,因為,當該第一支臂210與該第二支臂310的長度相同時,將在運作至一預定位置時即會產生奇異點(Singularity)位置,因此,於本實施例中,該第二支臂310與第一支臂210是假定為不同長度,較佳地,該第二支臂310的長度係可略小於該第一支臂210的長度。此外,而有關於該第二支臂310的第二長度將於後續段落中一併參考圖2做詳述之。As mentioned above, the
承前所述,而該晶圓機械手臂之第二臂部300的該第二轉動單元320係設置在第二支臂310的一側,於本實施例中,該第二臂部300之第二轉動單元320亦可如圖1中所示,係以該第一臂部200之第一轉動單元220作為基準而呈對角線方向設置於該第二臂部300之第二支臂310的一側,而不是在相對應於該第一臂部200之第一轉動單元220的同一軸向上。此外,於本實施例中,該第二臂部300之第二轉動單元320 係不同於該第一臂部200之第一轉動單元220,即該第二臂部300之第二轉動單元320係可轉動360度。而值得一提的是,由於該底座部100之底座轉動單元120、該第一臂部200之第一轉動單元220以及該第二臂部300之第二轉動單元320三者之間的配置係呈Z字型,因此,其移動範圍將可預期加大,並可用以適配於大尺寸晶圓而進行大幅度的位移運動。As mentioned above, the
承前所述,而該晶圓機械手臂之晶圓配置部400係可轉動地樞設在該第二臂部300的一側或上方,較佳地,該晶圓配置部400係可連接於該第二臂部300之第二轉動單元320,如此一來,該晶圓配置部400係可隨著該第二臂部300之第二轉動單元320隨之呈現轉動360度。As mentioned above, the
承前所述,而該晶圓機械手臂之晶圓配置部400的一側或上方係呈平坦的,如此一來,係可讓晶圓或待測樣品可被承載配置在該晶圓配置部400上;此外,該晶圓配置部400係可產生吸附靜電用以固定晶圓,亦可放置具有黏附性的材料或構件來用以將晶圓強化固定,較佳地,可將具有黏附性的材料或構件沿著該晶圓配置部400對應於晶圓的平坦面周圍配置。As mentioned above, one side or the upper side of the
承前所述,而該晶圓機械手臂之自行轉動單元600係連接於該底座部100的另一側或其上方,即如圖1所示,該自行轉動單元600係連接於該底座部100之底座手臂110左側一端的位置,且該自行轉動單元600係可依預定設定的角度進行轉動,而於本實施例中,該自行轉動單元600係以該底座部100之底座手臂110為假定軸心而呈現徑向轉動,因此,該底座部100之底座手臂110係隨著該自行轉動單元600而隨之呈現傾斜轉動,如此一來,最後將會使配置在該晶圓配置部400中的晶圓角度隨之呈現傾斜。而值得一提的是,當該自行轉動單元600係為0度角度作為基準時,理想的轉動角度約可自-10度轉動至+70度。As mentioned above, the self-rotating
承前所述,而該晶圓機械手臂之高度調整單元700係連接於該底座部100的另一側或其下方,即如圖1所示,該高度調整單元700係連接於該底座部100之底座手臂110左側下方的位置,且與該自行轉動單元600呈間隔設置,該高度調整單元700係用以調整該底座部100的高度,較佳地,該高度調整單元700係可將該底座部100之底座手臂110進行高度調整,其功效在於,可以調整離子束照射器和晶圓或待測樣品二者之間的距離(圖中未示)。As mentioned above, the
承前所述,而該晶圓機械手臂之水平調整單元800係連接在該底座部100的另一側或其上方,即如圖1所示,該水平調整單元800可以配置在底座部100之底座手臂110左側上方的位置,且與該自行轉動單元600呈間隔設置,該水平調整單元800係用以調整該底座部100可呈水平方向移動,於本實施例中,水平方向係指為與高度方向呈現交叉的方向,因此,隨著該水平調整單元800的運作,該底座部100之底座手臂110於該反應室10內的水平位置將會有所變化,進而使晶圓和離子束照射器二者之間對應的位置亦會有所改變。As mentioned above, the
承前所述,本發明所揭露之晶圓機械手臂的該自行轉動單元600、該高度調整單元700、該水平調整單元800皆位於該反應室10的外部,而讓該反應室10內係可持續維持真空狀態,並可改變該底座部100作為基座功效的位置,進而增加量測實驗的準確性以及可通過多種方式改變晶圓或待測樣品於該反應室10中的位置。As mentioned above, the self-rotating
承前所述,而該晶圓機械手臂之該控制部500可將一移動訊號係經電性匹配並用以電性啟動該底座部100、該第一臂部200與該第二臂部300,更佳地,該控制部500亦可將另一移動訊號經電性匹配並用以電性啟動該底座部100之底座轉動單元120、該第一臂部200之第一轉動單元220以及該第二臂部300之第二轉動單元320。As mentioned above, the
於本實施例中,該控制部500亦可將又一移動訊號係經電性匹配並用以電性啟動該自行轉動單元600、該高度調整單元700以及該水平調整單元800,進而改變該底座部100的位置和角度。In this embodiment, the
此外,該控制部500可先將又一該移動訊號經電性係經電性匹配並用以電性啟動該自行轉動單元600、該高度調整單元700以及該水平調整單元800而用以調整設定該底座部100的位置和角度之後,接著,再將另一該移動訊號係經電性匹配並用以電性啟動該底座部100、該第一臂部200與該第二臂部300。In addition, the
而於本實施例中,本發明所揭露之晶圓機械手臂係依適配於該第一臂部200與該第二臂部300等構件的設定條件情況下所構成,因此,相較於先前技術,透過本發明所揭露之晶圓機械手臂操作過程中,其各自構件並不會產生干涉現象。In this embodiment, the wafer robot arm disclosed in the present invention is configured according to the setting conditions of the
請再一併參閱圖2,係為本發明實施例所揭露之晶圓機械手臂的部分構件俯視示意圖。Please refer to FIG. 2 again, which is a schematic top view of some components of the wafer robot arm according to the embodiment of the present invention.
而透過圖2,係用以明確界定本發明實施例所揭露之晶圓機械手臂的各子構件之詞彙。Through FIG. 2, the vocabulary is used to clearly define each sub-component of the wafer robot arm disclosed in the embodiment of the present invention.
本發明實施例所揭露之晶圓機械手臂主要係由所界定的該第一長度、該第二長度、該間隔長度以及該假想長度所構成,且在操作過程中,彼此之間可不產生干涉。The wafer robotic arm disclosed in the embodiment of the present invention is mainly composed of the defined first length, the second length, the interval length and the imaginary length, and there may be no interference with each other during operation.
而本發明實施例所揭露之晶圓機械手臂所界定之第一長度係指該第一臂部200的長度,準確地說,是界定為自該底座部100之底座轉動單元120至該第一臂部200之第一轉動單元220二者之間的長度距離,即如圖2中所示,可以明確地以該第一臂部200之第一支臂210作為基準,該底座部100之底座轉動單元120與該第一臂部200之第一轉動單元220二者構件係彼此隔開並配置在該第一臂部200之第一支臂210的相對二端,因此,本發明實施例所揭露之晶圓機械手臂所界定之第一長度係可推定視為該底座部100之底座轉動單元120與該第一臂部200之第一轉動單元220二者之間的長度距離。The first length defined by the wafer robot arm disclosed in the embodiment of the present invention refers to the length of the
而本發明實施例所揭露之晶圓機械手臂所界定之第二長度係指該第二臂部300的長度,且該第二長度係類同於該第一長度的界定方式,係界定自該第一臂部200之第一轉動單元220至該第二臂部300之第二轉動單元320二者之間的長度距離,即如圖2中所示,該第一臂部200之第一轉動單元220與該第二臂部300之第二轉動單元320亦以該第二臂部300之第二支臂310作為基準,使該第一臂部200之第一轉動單元220與該第二臂部300之第二轉動單元320二者構件係彼此隔開並配置在該第二臂部300之第二支臂310的相對兩端,因此,本發明實施例所揭露之晶圓機械手臂所界定之第二長度係可推定視為該第一臂部200之第一轉動單元220與該第二臂部300之第二轉動單元320二者之間的長度距離。The second length defined by the wafer robot arm disclosed in the embodiment of the present invention refers to the length of the
而本發明實施例所揭露之晶圓機械手臂所界定之間隔長度係界定一個基準位置與該第二臂部300之第二轉動單元320二者之間的長度,因此,在界定說明該間隔長度之前,則有必要先行了解界定該基準位置,所以後續將先行界定說明該基準位置。The defined interval length of the wafer robot arm disclosed in the embodiment of the present invention defines the length between a reference position and the
承前所述,該基準位置係可界定為以晶圓或待測樣品相對應於離子束照射器之間的位置,離子束照射器會基於一個聚焦處進行離子束照射,而該基準位置係可指當離子束照射器經產生離子束照射到晶圓或待測樣品的位置,進而將該基準位置假定為一個聚焦處,因此,本發明實施例所揭露之晶圓機械手臂所界定之間隔長度係假定以此基準位置與該第二臂部300之第二轉動單元320二者之間的直線長度距離。而值得一提的是,當該晶圓配置部400具有的一個假想中心點的位置時,此時,本發明實施例所揭露之晶圓機械手臂所界定之間隔長度係假定自基準位置至該晶圓配置部400之假想中心點二者之間的直線長度距離。As mentioned above, the reference position can be defined as the position between the wafer or the sample to be tested and the ion beam irradiator. The ion beam irradiator will irradiate the ion beam based on a focusing point, and the reference position can be Refers to the position where the ion beam is generated by the ion beam irradiator and irradiates the wafer or the sample to be tested, and then the reference position is assumed to be a focus point. Therefore, the distance between the wafer robot arms disclosed in the embodiment of the present invention is defined by the length. It is assumed that the linear length distance between this reference position and the
最後,本發明實施例所揭露之晶圓機械手臂所界定之假想長度係為自前述所揭露的該基準位置至設置在該第一臂部200之第一支臂210一側下方的該底座部100之底座轉動單元120二者之間的長度距離,即如圖2中所示,係可明確地辨識出假想長度。Finally, the imaginary length defined by the wafer robot arm disclosed in the embodiment of the present invention is from the reference position disclosed above to the base portion disposed below the
圖3係為本發明所揭露之晶圓機械手臂的一個流程圖,主要係以該晶圓機械手臂之該底座部、該第一臂部、該第二臂部以及該晶片配置部等構件之間所界定之數值,作為運作時所需符合的一個設定條件流程圖。3 is a flow chart of the wafer robot arm disclosed in the present invention, which mainly includes the base part, the first arm part, the second arm part, the wafer placement part and other components of the wafer robot arm. The values defined in the time are used as a set condition flow chart that needs to be met during operation.
圖4係為本發明所揭露之晶圓機械手臂的另一個流程圖,主要係以該晶圓機械手臂之該底座部、該第一臂部、該第二臂部以及該晶片配置部等構件之間所界定之數值,作為運作時所需符合的另一個設定條件流程圖。FIG. 4 is another flow chart of the wafer robot arm disclosed in the present invention, which mainly includes the base part, the first arm part, the second arm part, the wafer placement part and other components of the wafer robot arm. The values defined between are used as another set condition flow chart that needs to be met during operation.
圖5係類似於前述圖2之部分構件假想運作示意圖,主要係揭露本發明之晶圓機械手臂在符合設定條件後的運作狀態。FIG. 5 is a schematic diagram of the hypothetical operation of some components similar to the aforementioned FIG. 2 , and mainly discloses the operating state of the wafer robot arm of the present invention after meeting the set conditions.
本發明實施例所揭露之晶圓機械手臂主要係依據前述圖2所界定說明的該第一長度、該第二長度、該間隔長度以及該假想長度所構成。The wafer robot arm disclosed in the embodiment of the present invention is mainly composed of the first length, the second length, the interval length and the imaginary length as defined and illustrated in FIG. 2 .
再請參閱圖3的演算方式,係可從一設定條件,即乃由一個第一值減去一個第二值後所得之差值,且該差值必須為正數。Please refer to the calculation method of Figure 3 again, which can be based on a set condition, that is, the difference obtained by subtracting a second value from a first value, and the difference must be a positive number.
承前所述,該第一值係界定為該第一長度與該第二長度二者之間相加後的總和(即第一值=第一長度+第二長度)。As mentioned above, the first value is defined as the sum of the first length and the second length (ie, first value = first length + second length).
承前所述,該第二值係界定為該間隔長度與該假想長度二者之間相加後的總和(即第二值=間隔長度+假想長度)。As mentioned above, the second value is defined as the sum of the interval length and the imaginary length (that is, the second value = interval length + imaginary length).
承前所述,如此一來,在進行演算時,該第一值與該第二值二者在進行相減時,其所得到的差值(第一值-第二值)必須為正數才能符合本發明所揭露之晶圓機械手臂各子構件間的機械條件,進而達到各子構件彼此之間在操作時不受到干涉現象。As mentioned above, when performing calculations, when the first value and the second value are subtracted, the resulting difference (first value - second value) must be a positive number to comply with The mechanical conditions between the sub-components of the wafer robotic arm disclosed by the present invention can further achieve the goal of preventing interference between the sub-components during operation.
再請參閱圖4的演算方式,可明確得到另一設定條件,即乃由一個第三值減去一個第四值後所得之差值,且該數值必須為正數。Referring again to the calculation method in Figure 4, we can clearly obtain another setting condition, which is the difference obtained by subtracting a fourth value from a third value, and the value must be a positive number.
承前所述,該第三值係界定為該第一長度與該假想長度二者之間相加後的總和(即第三值=第一長度+假想長度)。As mentioned above, the third value is defined as the sum of the first length and the imaginary length (that is, the third value = first length + imaginary length).
承前所述,該第四值係界定為該第二長度與該間隔長度二者之間相加後的總和(即第四值=第二長度+間隔長度)。As mentioned above, the fourth value is defined as the sum of the second length and the interval length (that is, the fourth value = the second length + the interval length).
承前所述,如此一來,在進行演算時,該第三值與該第四值二者在進行相減時,其所得到的差值(第三值-第四值)必須為正數,才能視為符合本發明所揭露之晶圓機械手臂各子構件間的機械條件。As mentioned above, when performing calculations, when the third value and the fourth value are subtracted, the resulting difference (third value - fourth value) must be a positive number. It is considered to be in compliance with the mechanical conditions between the sub-components of the wafer robot arm disclosed in the present invention.
承前所述,本發明所揭露之晶圓機械手臂各子構件間是符合由前述圖3和圖4所界定說明的設定條件,並可用以設定各子構件間的長度,進而達到各子構件彼此之間在操作時不受到干涉現象。As mentioned above, the wafer robot arm disclosed in the present invention complies with the setting conditions defined and illustrated in FIGS. 3 and 4 , and can be used to set the length of each sub-component, thereby achieving the mutual alignment of each sub-component. There is no interference during operation.
請再一併參閱圖5,為類似於圖2之部分構件假想運作示意圖,主要揭露該晶圓機械手臂一部份在符合設定條件後的運作狀態。Please refer to Figure 5 again, which is a schematic diagram of the hypothetical operation of some components similar to Figure 2, mainly revealing the operating status of a part of the wafer robotic arm after meeting the set conditions.
而透過圖5來進一步詳述觀察本發明,如下所示。The present invention will be further described in detail through Figure 5 as follows.
如圖5所示,本發明實施例所揭露之晶圓機械手臂主要係依據前述圖2所界定說明的該第一長度、該第二長度、該間隔長度,以及假想長度所構成(請一併參閱圖2)。而本發明實施例所揭露之晶圓機械手臂係可透過前述該等長度,進一步界定為該第一值、該第二值、該第三值與該第四值等數值狀態進而配合演算。As shown in Figure 5, the wafer robot arm disclosed in the embodiment of the present invention is mainly composed of the first length, the second length, the interval length, and the imaginary length defined and illustrated in Figure 2 (please include them together). See Figure 2). The wafer robot arm disclosed in the embodiment of the present invention can further define the first value, the second value, the third value, the fourth value and other numerical states through the above-mentioned lengths to coordinate the operation.
承前所述,倘若當該第一值減去該第二值的數值結果不是為正數時,就要設法使其成為正數,即藉由調整該底座部100、該第一臂部200以及該第二臂部300的個別長度來讓該第一值減去該第二值的數值(或稱差值)結果成為正數。As mentioned above, if the numerical result of the first value minus the second value is not a positive number, it is necessary to try to make it a positive number, that is, by adjusting the
承前所述,同樣地,該第三值與該第四值二者相減的數值亦必須為正數,倘若不符合該設定條件時,亦藉由調整該底座部100、該第一臂部200以及該第二臂部300的個別長度來讓該第三值減去該第四值的數值(或稱差值)結果成為正數。As mentioned above, similarly, the numerical value subtracted from the third value and the fourth value must also be a positive number. If the setting condition is not met, the
承前所述,本發明所揭露之晶圓機械手臂各子構件間符合前述所揭露該等設定條件的情況下時,即能判定各子構件彼此之間在操作時不會產生干涉現象。As mentioned above, when the sub-components of the wafer robotic arm disclosed in the present invention meet the setting conditions disclosed above, it can be determined that there will be no interference between the sub-components during operation.
此外,請再一併參閱圖1,當本發明所揭露之晶圓機械手臂在關閉電源時,由於該控制部500設有一重置設定(Reset)的技術特徵,如此一來,將能就由電性啟動該控制部500之重置設定(Reset)而讓該晶圓機械手臂的每個子構件都可移動復歸至初始位置,較佳地,亦得藉由經電性匹配並電性控制於該底座部100之底座轉動單元120、該第一臂部200之第一轉動單元220、該第二臂部300之第二轉動單元320、該自行轉動單元600、該高度調整單元700以及該水平調整單元800的各該移動訊號的技術特徵,就能更便於使該晶圓機械手臂的各子構件復歸至未收到各該移動訊號之前的初始位置。In addition, please refer to FIG. 1 again. When the wafer robot arm disclosed in the present invention is powered off, since the
以上為藉由本發明所揭露之實施例進行具體說明,有關本發明的詳細構造、特點、組裝或使用、製造等方式,皆已於前述實施方式詳細說明中予以明確描述,然,在本發明領域中具有通常知識者應能瞭解,該等詳細說明及本發明所列舉的實施例,係僅用於支持說明本發明實能據以實現,並非用以限制本發明之申請專利範圍;此外,可從本發明之申請專利範圍而能易於思及不偏離本發明的技術特徵思維,透過簡易增加、改變、刪除或增加組件等方式,當然亦應歸屬於本發明之申請專利範圍之範疇。The above is a detailed description through the embodiments disclosed by the present invention. The detailed structure, characteristics, assembly or use, manufacturing, etc. of the present invention have been clearly described in the foregoing detailed description of the embodiments. However, in the field of the present invention, Those with ordinary knowledge should be able to understand that these detailed descriptions and the examples enumerated for the present invention are only used to support the description of how the present invention can be implemented, and are not intended to limit the patentable scope of the present invention; in addition, the invention can be applied for From the patentable scope of the present invention, it is easy to imagine that without deviating from the technical characteristics of the present invention, through simple addition, change, deletion or addition of components, etc., of course, it should also fall within the scope of the patentable scope of the present invention.
10:反應室 100:底座部 110:底座手臂 120:底座轉動單元 200:第一臂部 210:第一支臂 220:第一轉動單元 300:第二臂部 310:第二支臂 320:第二轉動單元 400:晶圓配置部 500:控制單元 600:自行轉動單元 700:高度調整單元 800:水平調整單元 10:Reaction chamber 100: Base part 110: Base arm 120: Base rotation unit 200:First arm 210:First arm 220: First rotating unit 300:Second arm 310:Second arm 320: Second rotating unit 400: Wafer Arrangement Department 500:Control unit 600: Self-rotating unit 700: Height adjustment unit 800: Horizontal adjustment unit
圖1係為本發明之一個實施例的側視示意圖,主要係揭露一種晶圓機械手臂的整體架構。 圖2係為圖1之部分構件俯視示意圖,主要係揭露該晶圓機械手臂的部分構件暨作動圖示。 圖3係為本發明所揭露之晶圓機械手臂的一個流程圖,主要係以該晶圓機械手臂之一個底座部、一個第一臂部、一個第二臂部以及一個晶片配置部等構件之間所界定之數值,作為運作時所需符合的一個設定條件流程圖。 圖4係為本發明所揭露之晶圓機械手臂的另一個流程圖,主要係以該晶圓機械手臂之底座部、第一臂部、第二臂部以及晶片配置部等構件之間所界定之數值,作為運作時所需符合的另一個設定條件流程圖。 圖5類似於圖2之部分構件假想運作示意圖,主要係揭露該晶圓機械手臂在符合設定條件後的運作狀態。 FIG. 1 is a schematic side view of an embodiment of the present invention, mainly revealing the overall structure of a wafer robot arm. FIG. 2 is a schematic top view of some components of FIG. 1 , mainly revealing some components and operation diagrams of the wafer robotic arm. 3 is a flow chart of the wafer robot arm disclosed in the present invention, which mainly includes a base part, a first arm part, a second arm part and a wafer placement part of the wafer robot arm. The values defined in the time are used as a set condition flow chart that needs to be met during operation. Figure 4 is another flow chart of the wafer robot arm disclosed in the present invention, which is mainly defined by the base part, the first arm part, the second arm part and the chip placement part of the wafer robot arm. The value is used as another setting condition flow chart that needs to be met during operation. FIG. 5 is a schematic diagram of the hypothetical operation of some components similar to FIG. 2 , and mainly discloses the operating state of the wafer robotic arm after meeting the set conditions.
10:反應室 10:Reaction chamber
100:底座部 100: Base part
110:底座手臂 110: Base arm
120:底座轉動單元 120: Base rotation unit
200:第一臂部 200:First arm
210:第一支臂 210:First arm
220:第一轉動單元 220: First rotating unit
300:第二臂部 300:Second arm
310:第二支臂 310:Second arm
320:第二轉動單元 320: Second rotating unit
400:晶圓配置部 400: Wafer Arrangement Department
500:控制單元 500:Control unit
600:自行轉動單元 600: Self-rotating unit
700:高度調整單元 700: Height adjustment unit
800:水平調整單元 800: Horizontal adjustment unit
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