TWI829590B - Inspecting method of metal mask - Google Patents

Abstract

An inspecting method of a metal mask is provided. In the inspecting method, first, a metal mask having a first long side, a second long side, and a plurality of pattern regions. Next, according to the pattern regions adjacent to the first long side and the second long side, a first reference straight line and a second reference straight line are defined, where the first reference straight line is adjacent to the first long side, and the second reference straight line is adjacent to the second long side. Then, a first maximum offset length between the first reference straight line and the pattern regions adjacent to the first long edge is measured. A second maximum offset length between the second reference straight line and the pattern regions adjacent to the second long edge is measured. When the difference between the first maximum offset length and the second maximum offset length is less than or equal to 20 μm, the metal mask is determined to meet an inspecting standard.

Description

Metal mask detection method

The present invention relates to a detection method for patterning process tools, and in particular to a metal mask detection method.

Today, some display panels, such as organic light emitting diode (OLED) display panels, use fine metal mask (FMM) as one of the process tools. Specifically, organic light-emitting diode display panels are manufactured using evaporation. During the evaporation process, a fine metal mask is placed on the glass plate, and the plating material produced during the evaporation process can be deposited on the glass plate according to the multiple openings of the fine metal mask to form an organic light-emitting diode display. The film layer in the panel, such as the light-emitting layer.

Currently, display panels (including organic light-emitting diode display panels) have developed towards high resolution. In order to manufacture a high-resolution display panel, the metal mask needs to be quite thin, and the position and shape errors of the openings of the metal mask cannot be too large, otherwise a defective display panel will be produced, resulting in a decrease in yield.

At least one embodiment of the present invention provides a metal mask detection method, which can help screen metal masks and ensure the use of metal masks that meet detection standards, so as to achieve the purpose of improving yield.

At least one embodiment of the present invention also provides a metal mask, which can be obtained by screening using the above detection method.

The detection method of a metal mask proposed by at least one embodiment of the present invention includes providing a metal mask, wherein the metal mask has a first long side and a second long side opposite to each other, and a first short side and a second short side opposite to each other. sides and a plurality of pattern areas, wherein the first long side, the second long side, the first short side and the second short side surround the pattern areas, and the pattern areas are regularly arranged. According to these pattern areas adjacent to the first long side and the second long side, a first reference straight line and a second reference straight line are defined, wherein the first reference straight line is adjacent to the first long side and extends along the first long side. The second reference straight line is adjacent to the second long side and extends along the second long side. Next, a first maximum offset length between the pattern areas adjacent to the first long side and the first reference straight line is measured, wherein the first maximum offset length is perpendicular to the first reference straight line. A second maximum offset length between the pattern areas adjacent to the second long side and the second reference straight line is measured, wherein the second maximum offset length is perpendicular to the second reference straight line. When the difference between the first maximum offset length and the second maximum offset length is less than or equal to 20 microns, it is determined that the metal mask meets the testing standards, that is, it is a qualified metal mask used in the manufacturing process. In at least one embodiment of the present invention, the above detection method also includes determining that the metal mask is a mask that meets the detection standard when the first maximum offset length is less than or equal to 30 microns, that is, a qualified metal mask that meets the requirements of the manufacturing process. . On the contrary, when the first maximum offset length is greater than 30 microns, the metal mask is judged to be an unqualified mask.

In at least one embodiment of the present invention, the above detection method also includes determining that the metal mask is a mask that meets the detection standard when the second maximum offset length is less than or equal to 30 microns, that is, a qualified metal mask that meets the requirements of the manufacturing process. . On the contrary, when the second maximum offset length is greater than 30 microns, the metal mask is judged to be an unqualified mask. In at least one embodiment of the present invention, the above detection method further includes defining a third reference straight line based on the pattern areas adjacent to the first short side, wherein the third reference straight line is adjacent to the first short side and extends along the first short side. . Next, the third maximum offset length between the pattern areas adjacent to the first short side and the third reference straight line is measured, wherein the third maximum offset length is perpendicular to the third reference straight line. When the third maximum offset length is less than or equal to 10 microns, the metal mask is judged to be a mask that meets the testing standards, that is, a qualified metal mask that meets the requirements of the manufacturing process. On the contrary, when the third maximum offset length is greater than 10 microns, the metal mask is judged to be an unqualified mask.

The detection method of a metal mask proposed by at least one embodiment of the present invention includes defining a first reference straight line and a second reference straight line that are parallel to and separated from each other on the warped metal mask, where the length of the first reference straight line is L1, The length of the second reference straight line is L2. Next, the metal mask is flattened so that the first reference straight line becomes the first deformation line and the second reference straight line becomes the second deformation line, where the length of the first deformation line is L3 and the length of the second deformation line is L4. Next, it is determined whether the length L1 of the first reference straight line, the length L2 of the second reference straight line, the length L3 of the first deformation line, and the length L4 of the second deformation line satisfy the following mathematical formula: │(L3+L4)/2-(L1+L2)/2│≤20 micron When the length L1 of the first reference straight line, the length L2 of the second reference straight line, the length L3 of the first deformation line, and the length L4 of the second deformation line satisfy the mathematical formula, it is determined that the metal mask meets the detection standard.

In at least one embodiment of the present invention, the method of flattening the metal mask includes sandwiching the metal mask between two rigid substrates so that the rigid substrates flatten the metal mask.

In at least one embodiment of the present invention, the distance between the first reference straight line and the second reference straight line is between 3 centimeters and 25 centimeters.

In at least one embodiment of the present invention, the lengths of the first reference straight line and the second reference straight line are not equal.

The detection method of a metal mask proposed by at least one embodiment of the present invention includes providing a metal mask, wherein the metal mask has a first long side and a second long side opposite to each other, and a first short side and a second short side opposite to each other. sides and a plurality of pattern areas, wherein the first long side, the second long side, the first short side and the second short side surround the pattern areas, and the pattern areas are regularly arranged. Next, a first reference straight line and a second reference straight line are defined based on the pattern areas adjacent to the first long side and the second long side, wherein the first reference straight line is adjacent to the first long side and extends along the first long side, and The two reference straight lines are adjacent to the second long side and extend along the second long side. Next, a first maximum offset length between the pattern areas adjacent to the first long side and the first reference straight line is measured, wherein the first maximum offset length is perpendicular to the first reference straight line. A second maximum offset length between the pattern areas adjacent to the second long side and the second reference straight line is measured, wherein the second maximum offset length is perpendicular to the second reference straight line. When either the first maximum offset length and the second maximum offset length are less than or equal to 30 microns, the metal mask is determined to be a mask that meets the testing standards, that is, it is a qualified metal mask that meets the requirements of the manufacturing process.

The metal mask provided by at least one embodiment of the present invention includes a substrate. The substrate has a first long side and a second long side opposite to each other, a first short side and a second short side opposite to each other, and a plurality of pattern areas, wherein the first long side, the first short side, the second long side and the third The two short sides connect and surround these pattern areas in sequence, and define a first datum straight line and a second datum straight line on the substrate. In addition, the first reference straight line is adjacent to the first long side and extends along the first long side. The second reference straight line is adjacent to the second long side and extends along the second long side, wherein there is a first maximum offset length between the pattern areas of the first long side and the first reference straight line, and the first maximum offset length Perpendicular to the first datum straight line. There is a second maximum offset length between the pattern areas of the second long side and the second reference straight line, wherein the second maximum offset length is perpendicular to the second reference straight line, and the first maximum offset length is related to the second maximum offset length. The difference between the lengths is less than or equal to 20 microns.

In at least one embodiment of the present invention, the above pattern areas are regularly arranged.

In at least one embodiment of the present invention, two of the first reference straight lines are respectively adjacent to the first short side and the second short side, and two end points of the second reference straight line are respectively adjacent to the first short side and the second short side.

In at least one embodiment of the present invention, each of the pattern areas has multiple peripheral edges. The first maximum offset length is the maximum distance between the peripheral edges adjacent to the first long side and the first reference straight line, and the second maximum offset length is the maximum distance between the peripheral edges adjacent to the second long side and the second reference straight line. maximum distance.

In at least one embodiment of the present invention, the shape of each pattern area is a polygon, wherein each pattern area has multiple vertices. A first corner is formed between the first long side and the first short side, a second corner is formed between the first long side and the second short side, a third corner is formed between the second long side and the first short side, and a second corner is formed between the first long side and the second short side. A fourth corner is formed between the long side and the second short side. Two endpoints of the first reference straight line are respectively located at two vertices adjacent to the first corner and the second corner, and two endpoints of the second reference straight line are respectively located at two vertices adjacent to the third corner and the fourth corner.

In at least one embodiment of the present invention, the shape of each pattern area is a quadrilateral or a hexagon.

In at least one embodiment of the present invention, both end points of the first reference straight line and both end points of the second reference straight line are located outside these pattern areas and are respectively adjacent to the first corner, the second corner, the third corner and the third corner. Four corners.

In at least one embodiment of the present invention, each pattern area has a plurality of openings. The two end points of the first reference straight line are respectively located at the two openings adjacent to the first corner and the second corner, and the two end points of the second reference straight line are respectively located at the two openings adjacent to the third corner and the fourth corner.

In at least one embodiment of the present invention, the shape of each pattern area is circular, wherein each pattern area has a center of the circle. The two endpoints of the first reference straight line are respectively located at the two center points of the circles adjacent to the first corner and the second corner, and the two endpoints of the second reference straight line are respectively located at the two center points of the circles adjacent to the third corner and the fourth corner, wherein the first maximum deviation The shift length is the maximum distance between the center points of the circles adjacent to the first long side and the first reference straight line, and the second maximum offset length is the maximum distance between the center points of the circles adjacent to the second long side and the second reference straight line.

Based on the above, the detection method disclosed in at least one embodiment of the present invention can help select qualified metal masks and eliminate unqualified metal masks to reduce the output of defective display panels and thereby improve the yield rate of display panels.

In the following text, in order to clearly present the technical features of this case, the dimensions (such as length, width, thickness and depth) of the components (such as layers, films, substrates, regions, etc.) in the drawings will be exaggerated in varying proportions. . Therefore, the description and explanation of the embodiments below are not limited to the sizes and shapes of the components in the drawings, but should cover the size, shape, and deviations in both caused by actual manufacturing processes and/or tolerances. For example, flat surfaces shown in the drawings may have rough and/or non-linear features, while acute angles shown in the drawings may be rounded. Therefore, the components shown in the drawings of this case are mainly for illustration and are not intended to accurately depict the actual shapes of the components, nor are they intended to limit the patent scope of this case.

Secondly, the words "about", "approximately" or "substantially" appearing in the content of this case not only cover the clearly stated numerical values and numerical ranges, but also cover what can be understood by a person with ordinary knowledge in the technical field to which the invention belongs. The allowable deviation range, where the deviation range can be determined by the error generated during measurement, and this error is caused, for example, by limitations of the measurement system or process conditions. For example, two objects (such as the plane or traces of a substrate) are "substantially parallel" or "substantially perpendicular", where "substantially parallel" and "substantially perpendicular" respectively represent the parallelism and perpendicularity between the two objects. It can include non-parallelism and non-perpendicularity caused by the allowable deviation range.

In addition, "about" may mean within one or more standard deviations of the above numerical value, such as within ±30%, ±20%, ±10%, or ±5%. Words such as "approximately", "approximately" or "substantially" appearing in this text can be used to select acceptable deviation ranges or standard deviations based on optical properties, etching properties, mechanical properties or other properties, and are not solely based on one The standard deviation applies to all the above optical properties, etching properties, mechanical properties and other properties.

FIG. 1A is a schematic top view of a metal mask detected using the detection method according to at least one embodiment of the present invention. Please refer to FIG. 1A. In the detection method of this embodiment, first, a metal mask 100 is provided, wherein the metal mask 100 includes a substrate with a first long side 111 and a second long side 112 opposite to each other. The first short side 121 and the second short side 122 and a plurality of pattern areas 130, in which the first long side 111, the first short side 121, the second long side 112 and the second short side 122 are connected in sequence and surround these patterns. District 130.

The metal mask 100 may be formed by sequentially rolling and photolithography (including etching) a metal material, or may also be made by electroforming, where the metal material may be a metal sheet or a metal plate. Therefore, the shape of the metal mask 100 is not necessarily rectangular. In other words, the shape of any one of the first long side 111, the second long side 112, the first short side 121, and the second short side 122 is not necessarily a straight line.

Taking FIG. 1A as an example, the shapes of the first long side 111 and the second long side 112 are both curves. The shapes of the first long side 111 and the second long side 112 shown in FIG. 1A may further be quadratic curves. However, in other embodiments, the shape of at least one of the first long side 111, the second long side 112, the first short side 121 and the second short side 122 may also be a straight line, so the first long side 111, the The shape of any one of the two long sides 112, the first short side 121, and the second short side 122 is not limited to a straight line or a curve.

The shape of each pattern area 130 may be a polygon, and the pattern areas 130 may be regularly arranged, such as a matrix arrangement. Taking FIG. 1A as an example, four pattern areas 130 may be arranged in a 1×4 matrix, and the shape of each pattern area 130 may be a quadrilateral, such as a rectangle. Each pattern area 130 has a plurality of openings 131 , where the shape of each opening 131 may be a rectangle, and the openings 131 may also be arranged regularly, such as in a matrix, as shown in FIG. 1A .

The metal mask 100 may be used to manufacture display panels, such as organic light-emitting diode (OLED) display panels. When the metal mask 100 is used to manufacture an organic light-emitting diode display panel, the size of each pattern area 130 may be equivalent to the size of an organic light-emitting diode display panel, and the size of each opening 131 may be equivalent to a pixel. The above-mentioned pixels may be sub-pixels. Alternatively, the above pixel may be composed of multiple sub-pixels. When evaporating, the metal mask 100 can block part of the plating material, so that the plating material will basically only be deposited in these openings 131 to form film layers in the organic light-emitting diode display panel, such as the light-emitting layer.

The metal mask 100 also has four corners, namely the first corner 191 , the second corner 192 , the third corner 193 and the fourth corner 194 . The first corner 191 is formed between the first long side 111 and the first short side 121 , and the second corner 192 is formed between the first long side 111 and the second short side 122 . The third corner 193 is formed between the second long side 112 and the first short side 121 , and the fourth corner 194 is formed between the second long side 112 and the second short side 122 .

After the metal mask 100 is provided, the first reference straight line Sa1 and the second reference straight line Sa2 are defined on the substrate according to the pattern areas 130 adjacent to the first long side 111 and the second long side 112 . The first reference straight line Sa1 is adjacent to the first long side 111 and extends along the first long side 111 , while the second reference straight line Sa2 is adjacent to the second long side 112 and extends along the second long side 112 . Therefore, the first reference straight line Sa1 does not intersect or overlap with the second reference straight line Sa2. Since the metal mask 100 can be formed by sequentially rolling and photoetching metal materials, the metal mask 100 will become warped and uneven. The first reference straight line Sa1 and the second reference straight line Sa2 can be is defined on the warped and uneven metal mask 100 .

Both the first reference straight line Sa1 and the second reference straight line Sa2 have endpoints. In the embodiment shown in FIG. 1A , the first reference straight line Sa1 has two endpoints E11a and E11b, and the second reference straight line Sa2 has two endpoints E12a and E12b, where the two endpoints E11a and E11b are respectively adjacent to the first short side. 121 and the second short side 122, and the two end points E12a and E12b are also adjacent to the first short side 121 and the second short side 122 respectively. Since both the first reference straight line Sa1 and the second reference straight line Sa2 have endpoints, the first reference straight line Sa1 and the second reference straight line Sa2 are not infinitely long straight lines. Therefore, once the positions of these endpoints E11a, E11b, E12a and E12b are determined, it means that the first reference straight line Sa1 and the second reference straight line Sa2 are also defined.

Since the shape of each pattern area 130 is a polygon, each pattern area 130 has a plurality of vertices 130a. For example, in FIG. 1A , the pattern area 130 having a quadrilateral shape has four vertices 130 a. The two endpoints E11a and E11b of the first reference straight line Sa1 are respectively located at the two vertices 130a adjacent to the first corner 191 and the second corner 192, and the two endpoints E12a and E12b of the second reference straight line Sa2 are respectively located adjacent to the third corner 193. Two vertices 130a with the fourth corner 194.

In other words, these endpoints E11a, E11b, E12a and E12b shown in FIG. 1A can essentially be regarded as four vertices 130a of two pattern areas 130, wherein the two pattern areas 130 are respectively adjacent to the first short side 121 and the first short side 121. Second short side 122. It can be seen from this that in the embodiment shown in FIG. 1A , the first reference straight line Sa1 and the second reference straight line Sa2 are formed by four adjacent first corners 191 , second corners 192 , third corners 193 and fourth corners 194 . Vertex 130a is defined, so endpoints E11a, E11b, E12a and E12b are visible to the naked eye. In addition, the first reference straight line Sa1 and the second reference straight line Sa2 are basically virtual straight lines, so except for the end points E11a, E11b, E12a and E12b, the other parts of the first reference straight line Sa1 and the second reference straight line Sa2 are virtual straight lines. of.

After defining the first reference straight line Sa1 and the second reference straight line Sa2, that is, after determining the positions of the end points E11a, E11b, E12a and E12b, measure the pattern areas 130 adjacent to the first long side 111 and the first The first maximum offset length La1 between the reference straight line Sa1, and the second maximum offset length La2 measured between the pattern areas 130 adjacent to the second long side 112 and the second reference straight line Sa2, wherein the first maximum offset length La2 The shift length La1 is perpendicular to the first reference straight line Sa1, and the second maximum offset length La2 is perpendicular to the second reference straight line Sa2.

It should be noted that the first maximum offset length La1 and the first reference straight line Sa1 are "substantially perpendicular", and the second maximum offset length La2 and the second reference straight line Sa2 are also "substantially perpendicular". Therefore, the perpendicularity between the first maximum offset length La1 and the first reference straight line Sa1 and the perpendicularity between the second maximum offset length La2 and the second reference straight line Sa2 may include non-perpendicularity caused by the allowable deviation range. In addition, each pattern area 130 actually has these openings 131. However, in order to simplify the diagram and facilitate the presentation of the first maximum offset length La1 and the second maximum offset length La2, the middle two pattern areas 130 in FIG. 1A are omitted from illustration. Opening 131.

Each of these pattern areas 130 has a plurality of peripheral edges 130e, and in the same pattern area 130, the peripheral edge 130e has four vertices 130a, as shown in FIG. 1A. In this embodiment, the first maximum offset length La1 is the maximum distance between the peripheral edges 130e adjacent to the first long side 111 and the first reference straight line Sa1, while the second maximum offset length La2 is the maximum distance between the peripheral edges 130e adjacent to the first long side 111 and the first reference straight line Sa1. The maximum distance between these peripheral edges 130e of 112 and the second reference straight line Sa2.

When the difference between the first maximum offset length La1 and the second maximum offset length La2 is less than or equal to 20 microns, the metal mask 100 is determined to meet the detection standard, that is, among the aforementioned metal masks 100 that meet the detection standard The error range of these openings 131 is within the allowable range of the manufacturing process. Therefore, as long as the metal mask 100 does not have other defects or substandard parameters, the metal mask 100 can be put into use in related processes, such as physical vapor deposition (PVD). , and the above-mentioned metal mask 100 that meets the testing standards is suitable for manufacturing display panels, especially high-resolution organic light-emitting diode display panels.

On the other hand, when the difference between the first maximum offset length La1 and the second maximum offset length La2 is greater than 20 microns, the error of the openings 131 representing the metal mask 100 is too large and does not meet the detection standard, so that it is used The display panel made of the metal mask 100 (especially the high-resolution organic light-emitting diode display panel) may easily cause, for example, the luminescent layer in the sub-pixel area to shift, some sub-pixel areas to have no luminescent layer, or Defects such as excessive size differences in these light-emitting layers. Therefore, this metal mask 100 is not suitable for physical vapor deposition, such as sputtering or evaporation, and thus the metal mask 100 is judged to be an unqualified mask.

It should be noted that even if the difference between the first maximum offset length La1 and the second maximum offset length La2 is less than or equal to 20 microns, the metal mask 100 may still be judged as not meeting the detection standard. For example, when either the first maximum offset length La1 or the second maximum offset length La2 is greater than 30 microns, the metal mask 100 is determined to be an unqualified mask that does not meet the detection standard. In addition, when the difference between the first maximum offset length La1 and the second maximum offset length La2 is less than or equal to 20 microns, the first maximum offset length La1 is less than or equal to 30 microns, and the second maximum offset length La2 When it is also less than or equal to 30 microns, the metal mask 100 is judged to be a qualified mask that meets the testing standards.

It is worth mentioning that the above measurement of the first maximum offset length La1 and the second maximum offset length La2 and the definition of both the first reference straight line Sa1 and the second reference straight line Sa2 can all use a dimensional measuring instrument. to execute. Specifically, the dimensional measuring instrument can first find these endpoints E11a, E11b, E12a and E12b on the metal mask 100 to define the first reference straight line Sa1 and the second reference straight line Sa2.

The dimensional measuring instrument can provide coordinate values for these end points E11a, E11b, E12a and E12b. Taking the first reference straight line Sa1 as an example, the coordinate value of the end point E11a may be (X1, Y1), and the coordinate value of the end point E11b may be (X2, Y2). Next, substitute the coordinate values (X1, Y1) and (X2, Y2) of the above end points E11a and E11b into the following mathematical formula (1) to calculate the first maximum offset length La1, in which the above-mentioned dimensional measuring instrument is measuring After measuring the coordinate values (X1, Y1) and (X2, Y2) of the upper end points E11a and E11b, the calculation of mathematical formula (1) can be performed.

Mathematical formula (1):

L in the above mathematical formula (1) is equal to the first maximum offset length La1, and X and Y are the coordinate values (X, Y) of an endpoint SP1 of the first maximum offset length La1, where the endpoint SP1 is located on the periphery 130e, as shown in Figure 1A. In the same way, the dimensional measuring instrument can also provide coordinate values for end points E12a and E12b, so that the coordinate value of end point E12a can be (X3, Y3), and the coordinate value of end point E12b can be (X4, Y4). Then, the coordinate values (X3, Y3) and (X4, Y4) of the end points E12a and E12b are substituted into the following mathematical formula (2), in which the dimensional measuring instrument can also perform the calculation of the mathematical formula (2).

Mathematical formula (2):

Mathematical formula (2) is substantially the same as the above-mentioned mathematical formula (1). Specifically, in mathematical formula (1), by replacing X1 with X3, X2 with X4, Y1 with Y3, and Y2 with Y4, mathematical formula (2) can be obtained. In mathematical formula (2)s, L is equal to the second maximum offset length La2, and X and Y are the coordinate values (X, Y) of an endpoint SP2 of the second maximum offset length La2, where the endpoint SP2 is also Located at Perimeter 130e.

Using the above mathematical formulas (1) and (2), the dimensional measuring instrument can not only define the first reference straight line Sa1 and the second reference straight line Sa2, but also measure the first maximum offset length La1 and the second maximum offset length. La2, to determine whether the phase difference between the first maximum offset length La1 and the second maximum offset length La2 is greater than 20 microns, and to determine either the first maximum offset length La1 and the second maximum offset length La2 Whether it is larger than 30 microns, thereby eliminating unqualified metal masks 100 and selecting qualified metal masks 100 that meet the testing standards. In this way, the detection method of this embodiment can prevent the metal mask 100 that is not suitable for physical vapor deposition (such as evaporation) from being used to manufacture display panels, reduce the output of defective display panels, and improve the yield rate.

FIG. 1B is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. Referring to FIG. 1B , the detection method of this embodiment is similar to the detection method of the previous embodiment. For example, in the embodiment shown in FIG. 1B , mathematical formulas (1) and (2) can also be used to measure the first maximum offset length Lb1 and the second maximum offset length Lb2. The only difference between this embodiment and the previous implementation is that the definitions of the first reference straight line Sb1 and the second reference straight line Sb2 in FIG. 1B are different from the definitions of the first reference straight line Sa1 and the second reference straight line Sa2.

In the detection method of this embodiment, although the first reference straight line Sb1 and the second reference straight line Sb2 are also defined based on the pattern areas 130 adjacent to the first long side 111 and the second long side 112, they are different from the aforementioned Figure 1A In the embodiment shown, the two endpoints E21a and E21b of the first reference straight line Sb1 and the two endpoints E22a and E22b of the second reference straight line Sb2 are located outside these pattern areas 130 and are adjacent to the first corner 191 and the second corner respectively. 192, third corner 193 and fourth corner 194.

In addition, these endpoints E21a, E21b, E22a and E22b may be respectively located on a plurality of visible marks made on the metal mask 100. Taking FIG. 1B as an example, the metal mask 100 may also have a first mark 181, a second mark 182, a third mark 183 and a fourth mark 184 visible to the naked eye, where the first mark 181 is adjacent to the first corner 191, and the second mark 181 is adjacent to the first corner 191. 182 is adjacent to the second corner 192, the third mark 183 is adjacent to the third corner 193, and the fourth mark 184 is adjacent to the fourth corner 194. The endpoint E21a is located at the first symbol 181, the endpoint E21b is located at the second symbol 182, the endpoint E22a is located at the third symbol 183, and the endpoint E22b is located at the fourth symbol 184. Therefore, except for the end points E21a, E21b, E22a and E22b, other parts of the first reference straight line Sb1 and the second reference straight line Sb2 are imaginary.

FIG. 1C is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. Please refer to FIG. 1C . The detection method of this embodiment is similar to the detection method shown in FIG. 1A and FIG. 1B . For example, in the embodiment shown in FIG. 1C , mathematical formulas (1) and (2) can also be used to measure the first maximum offset length Lc1 and the second maximum offset length Lc2. However, the definitions of the first reference straight line Sc1 and the second reference straight line Sc2 in this embodiment are different from the aforementioned definitions of the first reference straight lines Sa1 and Sb1 and the second reference straight lines Sa2 and Sb2.

In the process of defining the first reference straight line Sc1 and the second reference straight line Sc2, the two end points E31a and E31b of the first reference straight line Sc1 are respectively located at the two openings 131 adjacent to the first corner 191 and the second corner 192, and the second Two end points E32a and E32b of the reference straight line Sc2 are respectively located at the two openings 131 adjacent to the third corner 193 and the fourth corner 194. Taking FIG. 1C as an example, the endpoints E31a, E31b, E32a and E32b may be located at the edges of the openings 131. Alternatively, in other embodiments, each of the endpoints E31a, E31b, E32a and E32b may be located within one of the openings 131. Therefore, the endpoints E31a, E31b, E32a and E32b are all located within the pattern areas 130.

FIG. 1D is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. Please refer to FIG. 1D . The detection method shown in FIG. 1D is substantially the same as the detection method shown in FIG. 1A , and the metal mask 101 in FIG. 1D can be the same as the metal mask 100 . For example, the metal mask 101 can also be formed by sequentially rolling and photoetching metal materials, or can also be made by electroforming. However, the shapes of the first long side 111 and the second long side 112 shown in FIG. 1A are both quadratic curves, but the shapes of the first long side 111d and the second long side 112d shown in FIG. 1D are both quadratic curves. A curve with at least one inflection point.

Although in the metal mask 101 shown in FIG. 1D, the first long side 111d and the second long side 112d are not quadratic curves, in the embodiment of FIG. 1D, the two end points E11a and E11b are respectively located adjacent to the first corner. 191 and the two vertices 130a of the second corner 192, and the two endpoints E12a and E12b are respectively located at the two vertices 130a adjacent to the third corner 193 and the fourth corner 194. Secondly, the first maximum offset length La1 is the maximum distance between the peripheral edges 130e adjacent to the first long side 111 and the first reference straight line Sa1, and the second maximum offset length La2 is also the maximum distance between the peripheral edges adjacent to the second long side 112. The maximum distance between 130e and the second reference straight line Sa2.

Therefore, regardless of whether the first long side 111d and the second long side 112d have inflection points, the definitions of the first reference straight line Sa1 and the second reference straight line Sa2 in Figure 1D and Figure 1A are the same, and the definitions of the first reference straight line Sa1 and the second reference straight line Sa2 in Figure 1D and Figure 1A are the same. The definitions of the first maximum offset length La1 and the second maximum offset length La2 are also the same. In addition, in other embodiments, the endpoints E11a, E11b, E12a and E12b in FIG. 1D may also be located outside the pattern areas 130 (as shown in FIG. 1B), or within the openings 131 of the pattern areas 130 (as shown in FIG. 1B). As shown in Figure 1C). Therefore, the definitions of the first reference straight line Sa1 and the second reference straight line Sa2 in FIG. 1D may be substantially the same as the definitions of the first reference straight lines Sb1 and Sc1 and the second reference straight lines Sb2 and Sc2.

FIG. 2 is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. Please refer to Figure 2. This embodiment is similar to the previous embodiment. For example, the metal mask 200 has a plurality of pattern areas 230, and the pattern areas 230 can be regularly arranged. Secondly, each pattern area 230 also has a plurality of openings 131, and the shape of each pattern area 230 is also a polygon. However, unlike the pattern areas 130 in the previous embodiment, in this embodiment, the shape of each pattern area 230 is hexagonal, and these pattern areas 230 are not arranged in a matrix.

The detection method of the metal mask 200 is basically the same as the detection method of the metal mask 100 . In the detection method of the metal mask 200, the first reference straight line S21 is defined based on the pattern areas 230 adjacent to the first long side 111, and the second reference straight line S22 is also defined based on the pattern areas 230 adjacent to the second long side 112. And it is defined that the first reference straight line S21 is adjacent to the first long side 111 and extends along the first long side 111, and the second reference straight line S22 is adjacent to the second long side 112 and extends along the second long side 112.

Each pattern area 230 also has a plurality of vertices 230a. For example, one pattern area 230 has six vertices 230a (as shown in Figure 2). The same as the embodiment of FIG. 1A , the two endpoints E41a and E41b of the first reference straight line S21 are located at the two vertices 230a adjacent to the first corner 191 and the second corner 192 respectively, and the two endpoints E42a and E42b of the second reference straight line Sa2 Two vertices 230a are respectively located adjacent to the third corner 193 and the fourth corner 194. Therefore, these endpoints E41a, E41b, E42a and E42b can essentially be regarded as the vertices 230a of four pattern areas 230, two of which are adjacent to the first short side 121, and the other two pattern areas 230 are adjacent to the second short side. 122.

The first corner 191 has a first vertex 191a, and the first long side 111 and the first short side 121 intersect at the first vertex 191a. The second corner 192 has a second vertex 192a, and the first long side 111 and the second short side 122 intersect at the second vertex 192a. The third corner 193 has a third vertex 193a, and the second long side 112 and the first short side 121 intersect at the third vertex 193a. The fourth corner 194 has a fourth vertex 194a, and the second long side 112 and the second short side 122 intersect at the fourth vertex 194a.

In this embodiment, the endpoints E41a, E41b, E42a and E42b are determined based on the vertex 230a adjacent to the first vertex 191a, the second vertex 192a, the third vertex 193a and the fourth vertex 194a. In detail, in the first corner 191, the end point E41a is located at the vertex 230a closest to the first vertex 191a. Similarly, endpoint E41b is located at the vertex 230a closest to the second vertex 192a, endpoint E42a is located at the vertex 230a closest to the third vertex 193a, and endpoint E42b is located at the vertex 230a closest to the fourth vertex 194a.

After the first reference straight line S21 and the second reference straight line S22 are defined, the first maximum offset length L21 between the pattern areas 230 adjacent to the first long side 111 and the first reference straight line S21 is measured, and the adjacent The second maximum offset length L22 between the pattern areas 230 of the second long side 112 and the second reference straight line S22, wherein the first maximum offset length L21 is substantially perpendicular to the first reference straight line S21, and the second maximum offset length L21 is substantially perpendicular to the first reference straight line S21. The shift length L22 is substantially perpendicular to the second reference straight line S22.

When the difference between the first maximum offset length L21 and the second maximum offset length L22 is greater than 20 microns, or either of the first maximum offset length L21 and the second maximum offset length L22 is greater than 30 microns , the metal mask 200 will be judged as an unqualified mask. When the difference between the first maximum offset length L21 and the second maximum offset length L22 is less than or equal to 20 microns, the first maximum offset length L21 is less than or equal to 30 microns, and the second maximum offset length L22 is also less than or equal to 30 microns, the metal mask 200 is judged to be a qualified mask and meets the testing standards.

In addition, the measurement methods of the first maximum offset length L21 and the second maximum offset length L22 may be the same as the first maximum offset length La1 and the second maximum offset length La2 in the previous embodiment. For example, the first maximum offset length L21 and the second maximum offset length L22 can be measured by a dimensional measuring instrument, wherein the dimensional measuring instrument can define the first reference straight line S21 and the second reference straight line S22, and use the above mathematics The first maximum offset length L21 and the second maximum offset length L22 are calculated using equations (1) and (2). Therefore, the measurement method of both the first maximum offset length L21 and the second maximum offset length L22 can be the same as the previous embodiment, and will not be described again here.

It should be noted that in the embodiment shown in FIG. 2 , the two endpoints E41a and E41b of the first reference straight line S21 and the two endpoints E42a and E42b of the second reference straight line Sa2 are respectively located at four vertices 230a, where the endpoints E41a and E42a are located at the vertex 230a of the outermost pattern area 230 adjacent to the second short side 121 , and the end points E41b and E42b are located at the vertex 230a of the outermost pattern area 230 adjacent to the second short side 122 .

However, in other embodiments, the end points E41a, E41b, E42a and E42b are respectively adjacent to the first corner 191, the second corner 192, the third corner 193 and the fourth corner 194, and may be located outside the pattern areas 230a. In other words, each of these endpoints E41a, E41b, E42a and E42b may not be in any pattern area 230a, and may be adjacent to one of the corners of the metal mask 200 (ie, the first corner 191, the second corner 192, the third corner Corner 193 or fourth corner 194).

Alternatively, the two endpoints E41a and E41b of the first reference straight line S21 may be located adjacent to the two openings 131 of the first corner 191 and the second corner 192 respectively, and the two endpoints E42a and E42b of the second reference straight line S22 may be located adjacent to the first corner 191 and the second corner 192 respectively. There are two openings 131 in the third corner 193 and the fourth corner 194 . For example, any of the endpoints E41a, E41b, E42a and E42b may be located at the edge of one of the openings 131 (as shown in FIG. 1C) or within one of the openings 131. Therefore, any of the endpoints E41a, E41b, E42a, and E42b shown in FIG. 2 is not limited to be located at the vertex 230a.

FIG. 3 is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. Please refer to Figure 3. This embodiment is similar to the previous embodiment. For example, the metal mask 300 has a plurality of pattern areas 330 , and the pattern areas 330 can be regularly arranged, such as a matrix arrangement, as shown in FIG. 3 , in which each pattern area 330 also has a plurality of openings 131 . However, unlike the aforementioned pattern areas 130 and 230, the shape of each pattern area 330 in this embodiment is circular, so each pattern area 330 has a center 330c.

The detection method of this embodiment is similar to the detection method of the previous embodiment, and this embodiment can also use the above mathematical formulas (1) and (2) to measure the first maximum offset length L31 and the second maximum offset length L32 . The only difference between the detection methods in this embodiment and the previous embodiment is that the definitions of the first reference straight line S31 and the second reference straight line S32 in FIG. 3 are different from the first reference straight line Sa1 and the second reference straight line Sa2, and FIG. The first maximum offset length L31 in 3 is different from the aforementioned first maximum offset length La1, Lb1, Lc1 or L21, and the second maximum offset length L32 is different from the aforementioned second maximum offset length La2, Lb2, Lc2 or L22 .

The two endpoints E51a and E51b of the first reference straight line S31 are respectively located at the two center points 330c adjacent to the first corner 191 and the second corner 192, while the two endpoints E52a and E52b of the second reference straight line S32 are respectively located adjacent to the third corner 193. The two center points 330c with the fourth corner 194. The first maximum offset length L31 that is substantially perpendicular to the first reference straight line S31 is the maximum distance between the center points 330c adjacent to the first long side 111 and the first reference straight line S31, and is substantially perpendicular to the second reference straight line S32. The second maximum offset length L32 is the maximum distance between the center points 330c adjacent to the second long side 112 and the second reference straight line S32.

It is worth mentioning that in the above embodiments of FIGS. 1A to 1D and 2 to 3 , any endpoint of the first reference straight line and the second reference straight line (i.e., endpoints E11a, E11b, E12a, E12b , E21a, E21b, E22a, E22b, E31a, E31b, E32a, E32b, E41a, E41b, E42a, E42b, E51a, E51b, E52a or E52b) are all adjacent to the first corner 191, the second corner 192, the third corner 193 and One of the fourth corners 194 , so the respective lengths of the first reference straight line and the second reference straight line are smaller than but close to the lengths of the metal masks 100 , 101 , 200 and 300 .

Therefore, even if the definitions of these first reference straight lines Sa1, Sb1, Sc1, S21 and S31 are different, the first maximum offset lengths La1, Lb1, Lc1, L21 and L31 calculated by mathematical formula (1) will not There are significant differences. Similarly, even if the definitions of the second reference straight lines Sa2, Sb2, Sc2, S22 and S32 are different, between the second maximum offset lengths La2, Lb2, Lc2, L22 and L32 calculated by mathematical formula (2) There won't be a significant difference either. In other words, these first reference straight lines Sa1, Sb1, Sc1, S21 and S31 and these second reference straight lines Sa2, Sb2, Sc2, S22 and S32 can all be calculated using the above mathematical formulas (1) and (2). The first maximum offset length and the second maximum offset length.

FIG. 4 is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. Please refer to Figure 4. The detection method in this embodiment is similar to the detection method in the previous embodiment. However, different from the previous embodiment, the detection method of this embodiment not only measures the first maximum offset length and the second maximum offset length, but also defines the third reference straight line S43 and measures the third maximum offset length L4 .

In this embodiment, the metal mask 400 has a first long side 411 and a second long side 412 opposite to each other, a first short side 421 and a second short side 422 opposite to each other, and a plurality of pattern areas 430, wherein the first The long side 411 , the second long side 412 , the first short side 421 and the second short side 422 are connected and surround these pattern areas 430 . The material and manufacturing method of the metal mask 400 shown in FIG. 4 may be the same as those of the metal mask 100 , and each pattern area 430 has a plurality of openings (not shown), where the openings may be regularly arranged.

In the method of detecting the metal mask 400, a third reference straight line S43 is defined based on the pattern areas 430 adjacent to the first short side 421, wherein the third reference straight line S43 is adjacent to the first short side 421 and along the first short side. 421 extension. Like the aforementioned first reference straight line and second reference straight line, the third reference straight line S43 has end points E63a and E63b, so the third reference straight line S43 is not an infinitely long straight line. Once the positions of these endpoints E63a and E63b are determined, the third reference straight line S43 is also defined.

The shape of each pattern area 430 may be a polygon or a deformed polygon, and have a plurality of vertices 430a. Taking FIG. 4 as an example, the shape of each pattern area 430 may be a twisted quadrilateral. Therefore, although the shape of the pattern area 430 is somewhat different from a general quadrilateral (such as a rectangle), the four vertices 430a of each pattern area 430 can still be identified. . The two end points E63a and E63b of the third reference straight line S43 may be located at the two vertices 430a adjacent to the first corner 491 and the third corner 493 respectively. That is to say, these endpoints E63a and E63b shown in FIG. 4 can actually be regarded as two vertices 430a.

It should be noted that in other embodiments, endpoints E63a and E63b may also be located outside these pattern areas 430a and adjacent to the first corner 491 and the third corner 493 respectively. Alternatively, the two endpoints E63a and E63b of the third reference straight line S43 may be located at two openings adjacent to the first corner 491 and the third corner 493 respectively, wherein either of these endpoints E63a and E63b may be located at the edge of one of the openings or is located inside one of the openings. Therefore, either endpoint E63a or E63b shown in FIG. 4 is not limited to be located at the vertex 430a.

Next, the third maximum offset length L4 between the pattern areas 430 adjacent to the first short side 421 and the third reference straight line S43 is measured, wherein the third maximum offset length L4 is perpendicular to the third reference straight line S43. Similar to the embodiment of FIG. 1A , the pattern areas 430 each have a plurality of peripheral edges 430e, and the third maximum offset length L4 is the maximum distance between the peripheral edges 430e adjacent to the first short side 421 and the third reference straight line S43. The definition of the third reference straight line S43 and the measurement of the third maximum offset length L4 can both be carried out using a dimensional measuring instrument, in which the third maximum offset length L4 can be measured according to the aforementioned mathematical formula (1). When the third maximum offset length L4 is greater than 10 microns, the metal mask 400 is determined to be an unqualified mask. On the contrary, when the third maximum offset length L4 is less than or equal to 10 microns, it is determined that the metal mask 400 is a mask that meets the testing standards, that is, it is a qualified metal mask 400 that meets the requirements of the manufacturing process.

In the embodiment shown in FIG. 4 , the first long side 411 and the second long side 412 are straight lines. However, in other embodiments (such as the embodiment shown in FIG. 1A ), the first long side 411 and the second long side 412 are straight lines. The long sides 412 can also all be curved. Therefore, FIG. 4 does not limit the shapes of the first long side 411 and the second long side 412 . In addition, according to the third reference straight line S43 shown in FIG. 4 , a fourth reference straight line (not shown) adjacent to the second short side 422 can be defined. The two endpoints of the fourth reference straight line are also adjacent to the second corner 492 and the fourth corner 494 respectively, and using this fourth reference straight line, the fourth maximum offset length can be measured to ensure that the metal mask 400 is suitable for physical applications. Vapor phase deposition to avoid reducing the yield of display panels (such as organic light-emitting diode display panels).

FIG. 5A is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention, and FIG. 5B is a schematic side view of the metal mask in FIG. 5A . Referring to FIG. 5A and FIG. 5B , first, a metal mask 500 is provided. The metal mask 500 has a first long side 511 and a second long side 512 facing each other, a first short side 521 and a second short side 522 facing each other, and a plurality of pattern areas (not shown). Similar to the metal mask 100, the first long side 511, the second long side 512, the first short side 521 and the second short side 522 are connected and surround these pattern areas. Secondly, the metal mask 500 can also be formed by sequentially rolling and photoetching metal materials, or it can be made by electroforming. Therefore, the metal mask 500 will also warp and become uneven, as shown in Figure 5B Show.

Next, a first reference straight line S51 and a second reference straight line S52 that are parallel to and separated from each other are defined on the warped metal mask 500, wherein the first reference straight line S51 and the second reference straight line S52 do not intersect or overlap, and the first reference straight line S51 and the second reference straight line S52 do not intersect or overlap. The lengths of the reference straight line S51 and the second reference straight line S52 may be equal to each other. The first reference straight line S51 has end points E71a and E71b, and the second reference straight line S52 has end points E72a and E72b. Therefore, neither the first reference straight line S51 nor the second reference straight line S52 is an infinitely long straight line.

In this embodiment, at least one alignment mark (not shown) may be formed on the metal mask 500 first, and one of the alignment marks may be located on one of the end points E71a, E71b, E72a, and E72b. The dimensional measuring instrument can detect the above-mentioned alignment marks and define the coordinate values of the end points E71a, E71b, E72a and E72b based on the positions of the alignment marks. In this way, the dimensional measuring instrument can calculate the lengths of the first reference straight line S51 and the second reference straight line S52.

The first reference straight line S51 and the second reference straight line S52 may be substantially parallel, so the parallelism between the first reference straight line S51 and the second reference straight line S52 may include non-parallelism caused by the allowable deviation range, wherein the aforementioned allowable deviation The range can be within 3 microns. In addition, the distance between the first reference straight line S51 and the second reference straight line S52 can be between 3 centimeters and 25 centimeters, and the error of this distance can be within ±3 microns.

FIG. 5C is a top view of the metal mask in FIG. 5A after being flattened. Referring to FIG. 5C , next, the metal mask 500 is flattened, so that the first reference straight line S51 becomes the first deformation line S51d, and the second reference straight line S52 becomes the second deformation line S52d. When the metal mask 500 is flattened, the first long side 511, the second long side 512, the first short side 521 and the second short side 522 will also deform. For example, the first long side 511 becomes the longer first long side 511p, and the second long side 512 becomes the longer second long side 512p.

FIG. 5D is a schematic side view of the metal mask in FIG. 5C being sandwiched between two rigid substrates. Referring to Figure 5C and Figure 5D, the method of flattening the metal mask 500 may be to sandwich the metal mask 500 between two rigid substrates 51, so that these rigid substrates 51 flatten the metal mask 500, wherein the rigid substrate 51 can be a glass plate or steel plate.

Please refer to Figure 5A and Figure 5C. Next, determine whether the length of the first reference straight line S51, the length of the second reference straight line S52, the length of the first deformation line S51d, and the length of the second deformation line S52d satisfy the following mathematical formula (3) .

Mathematical formula (3): │(L3+L4)/2-(L1+L2)/2│≤20(micron)

In the above mathematical formula (3), L1 is the length of the first reference straight line S51, L2 is the length of the second reference straight line S52, L3 is the length of the first deformation line S51d, and L4 is the length of the second deformation line S52d. When the length of the first reference straight line S51, the length of the second reference straight line S52, the length of the first deformation line S51d and the length of the second deformation line S52d satisfy mathematical formula (3), the metal mask 500 is determined to meet the detection standard. Qualified mask.

In addition, the length of the first reference straight line S51, the length of the second reference straight line S52, the length of the first deformation line S51d and the length of the second deformation line S52d can be measured using a dimensional measuring instrument, and the mathematical formula (3) is also It can be calculated through a dimensional measuring instrument. The dimensional measuring instrument can automatically select the positions of the two endpoints of the first deformation line S51d and the positions of the two endpoints of the second deformation line S52d based on the position of the above-mentioned alignment mark, thereby calculating The length of the first deformation line S51d and the length of the second deformation line S52d.

It is worth mentioning that, in the embodiment shown in FIG. 5A , the lengths of the first reference straight line S51 and the second reference straight line S52 are equal to each other. However, in other embodiments, the lengths of the first reference straight line S51 and the second reference straight line S52 may not be equal. For example, in the embodiment shown in FIG. 6 , a first reference straight line S51 and a second reference straight line S62 that are parallel to and separated from each other can be defined on the warped metal mask 500 , wherein the first reference straight line S51 and the second reference straight line S62 can be defined on the warped metal mask 500 . The lengths of the straight lines S62 are not equal to each other. For example, the first reference straight line S51 is larger than the second reference straight line S62, as shown in FIG. 6 . Therefore, the first reference straight line S51 and the second reference straight line S52 in FIG. 5A are not limited to being equal to each other.

In summary, the detection method disclosed in at least one embodiment of the present invention can help select qualified metal masks and eliminate unqualified metal masks to avoid metals that are not suitable for physical vapor deposition (such as evaporation). Masks are used to manufacture display panels (eg, organic light-emitting diode display panels). In this way, the output of defective display panels can be reduced, thereby improving the yield rate.

Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Those with ordinary skill in the technical field to which the present invention belongs may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention is The scope of invention protection shall be determined by the appended patent application scope.

51: Rigid substrate 100, 101, 200, 300, 400, 500: metal mask 111, 411, 511: first long side 112, 412, 512: second long side 121, 421, 521: first short side 122, 422, 522: second short side 130, 230, 330, 430: pattern area 130a, 230a, 430a: vertex 130e, 430e: Perimeter 131:Open your mouth 181:First mark 182:Second mark 183:The third mark 184:The fourth mark 191, 491: First corner 192, 492: Second corner 193, 493: Third corner 194, 494: Fourth corner 330c: center of circle E11a, E11b, E12a, E12b, E21a, E21b, E22a, E22b, E31a, E31b, E32a, E32b, E41a, E41b, E42a, E42b, E51a, E51b, E52a, E52b, E63a, E63b, E71a, E71b, E72a , E72b, SP1, SP2: Endpoint La1, Lb1, Lc1, L21, L31: first maximum offset length La2, Lb2, Lc2, L22, L32: second maximum offset length L4: The third maximum offset length Sa1, Sb1, Sc1, S21, S31, S51: first reference straight line Sa2, Sb2, Sc2, S22, S32, S52, S62: second reference straight line S51d: first deformation line S52d: Second deformation line S43: The third reference straight line

FIG. 1A is a schematic top view of a metal mask detected using the detection method according to at least one embodiment of the present invention. FIG. 1B is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. FIG. 1C is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. FIG. 1D is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. FIG. 2 is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. FIG. 3 is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. FIG. 4 is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. FIG. 5A is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention. Figure 5B is a schematic side view of the metal mask in Figure 5A. FIG. 5C is a top view of the metal mask in FIG. 5A after being flattened. FIG. 5D is a schematic side view of the metal mask in FIG. 5C being sandwiched between two rigid substrates. FIG. 6 is a schematic top view of a metal mask detected using a detection method according to another embodiment of the present invention.

100:Metal mask

111:First long side

112:Second long side

121: First short side

122:Second short side

130: Pattern area

130a: vertex

130e: Zhou Yuan

131:Open your mouth

191:First corner

192:Second corner

193:Third corner

194:Fourth corner

E11a, E11b, E12a, E12b, SP1, SP2: endpoints

La1: the first maximum offset length

La2: The second maximum offset length

Sa1: first reference straight line

Sa2: second reference straight line

Claims (6)

A metal mask detection method, including: Provide a warped metal mask, wherein the metal mask has a first long side and a second long side opposite to each other; A first datum straight line is defined on the metal mask along the first long side, and a second datum straight line is defined along the second long side, so that the first datum straight line and the second datum straight line are parallel to each other and Separated, the first datum straight line is close to the first long side and the second datum straight line is close to the second long side, wherein the length of the first datum straight line is L1 and the length of the second datum straight line is L2; Flatten the metal mask so that the first reference straight line becomes a first deformation line, and the second reference straight line becomes a second deformation line, where the length of the first deformation line is L3, and the length of the second deformation line is L3. Length L4; and Determine whether the length L1 of the first reference straight line, the length L2 of the second reference straight line, the length L3 of the first deformation line, and the length L4 of the second deformation line satisfy the following mathematical formula: │(L3+L4)/2-(L1+L2)/2│≤20 microns; and When the length L1 of the first reference straight line, the length L2 of the second reference straight line, the length L3 of the first deformation line and the length L4 of the second deformation line satisfy the mathematical formula, it is determined that the metal mask meets the detection standard . The metal mask detection method according to claim 1, wherein the method of flattening the metal mask includes sandwiching the metal mask between two rigid substrates so that the two rigid substrates flatten the metal mask. The metal mask detection method according to claim 1, wherein the distance between the first reference straight line and the second reference straight line is between 3 centimeters and 25 centimeters. The metal mask detection method as claimed in claim 1, wherein the first reference straight line and the second reference straight line are unequal in length. The metal mask detection method according to claim 1, wherein the length of the first deformation line is greater than the length of the first reference straight line, and the length of the second deformation line is greater than the length of the second reference straight line. The metal mask detection method according to claim 1, wherein the metal mask also has a first short side and a second short side opposite to each other and a plurality of pattern areas, wherein the first long side, the first The short side, the second long side and the second short side are connected in sequence and surround the pattern areas.

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