TWI827905B - Magnetron sputtering coating device and working method - Google Patents
Magnetron sputtering coating device and working method Download PDFInfo
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- TWI827905B TWI827905B TW110102041A TW110102041A TWI827905B TW I827905 B TWI827905 B TW I827905B TW 110102041 A TW110102041 A TW 110102041A TW 110102041 A TW110102041 A TW 110102041A TW I827905 B TWI827905 B TW I827905B
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 237
- 238000000576 coating method Methods 0.000 title claims abstract description 97
- 239000011248 coating agent Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000007423 decrease Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 239000006115 industrial coating Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
一種磁控濺射鍍膜裝置及其工作方法,其中,磁控濺射鍍膜裝置包含:真空鍍膜室;可旋轉工件架,可沿其中心軸在真空鍍膜室內旋轉,具有複數個側壁,複數個側壁用於承載待鍍膜工件;至少一個磁控濺射源,設置於真空鍍膜室內,與待鍍膜工件之間具有間隙,用於向待鍍膜工件的表面濺射鍍膜材料顆粒;位置調節裝置,用於調整磁控濺射源的位置,當待鍍膜工件與磁控濺射源相對的位置由中心向邊緣轉動時,位置調節裝置調節磁控濺射源的位置,使磁控濺射源到中心軸的距離逐漸變大。利用本發明之磁控濺射鍍膜裝置製出的鍍膜均一性好。 A magnetron sputtering coating device and its working method, wherein the magnetron sputtering coating device includes: a vacuum coating chamber; a rotatable workpiece frame that can rotate in the vacuum coating chamber along its central axis and has a plurality of side walls; a plurality of side walls Used to carry the workpiece to be coated; at least one magnetron sputtering source is installed in the vacuum coating chamber with a gap between the workpiece to be coated and used to sputter coating material particles onto the surface of the workpiece to be coated; a position adjustment device for Adjust the position of the magnetron sputtering source. When the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the center to the edge, the position adjustment device adjusts the position of the magnetron sputtering source so that the magnetron sputtering source reaches the central axis. The distance gradually becomes larger. The coating produced by the magnetron sputtering coating device of the present invention has good uniformity.
Description
本發明涉及真空濺射領域,尤其涉及一種磁控濺射鍍膜裝置及其工作方法。 The invention relates to the field of vacuum sputtering, and in particular to a magnetron sputtering coating device and a working method thereof.
近年來,磁控濺射鍍膜裝置在工業化鍍膜生產中的應用日益廣泛,特別是,隨著觸控螢幕相關的終端產品市場持續升溫,利用磁控濺射鍍膜裝置製備性能優良的觸控螢幕所需的鍍膜成為趨勢之一。 In recent years, magnetron sputtering coating equipment has been increasingly used in industrial coating production. In particular, as the market for end products related to touch screens continues to heat up, magnetron sputtering coating equipment is used to prepare touch screens with excellent performance. Required coating has become one of the trends.
現有的磁控濺射鍍膜裝置通常包含真空鍍膜室、可旋轉工件架和磁控濺射源,其中,可旋轉工件架可沿其中心軸在真空鍍膜室內旋轉,為了更好的承載多個平板型待鍍膜工件,將可旋轉工件架設置為多面體結構,而多面體結構的外側壁用於承載待鍍膜工件,磁控濺射源用於向待鍍膜工件表面濺射鍍膜材料。 Existing magnetron sputtering coating devices usually include a vacuum coating chamber, a rotatable workpiece holder and a magnetron sputtering source. The rotatable workpiece holder can rotate along its central axis in the vacuum coating chamber in order to better carry multiple flat plates. Type of workpiece to be coated, the rotatable workpiece holder is set into a polyhedral structure, and the outer wall of the polyhedral structure is used to carry the workpiece to be coated, and the magnetron sputtering source is used to sputter the coating material onto the surface of the workpiece to be coated.
然而,在可旋轉工件架旋轉的過程中,待鍍膜工件上各點的旋轉半徑不同,使得磁控濺射源到待鍍膜工件不同區域的距離不同,從而導致在待鍍膜工件表面所形成的鍍膜的厚度不一致,這將給終端產品帶來顏色及光學性能的不一致。 However, during the rotation of the rotatable workpiece holder, the rotation radii of each point on the workpiece to be coated are different, resulting in different distances from the magnetron sputtering source to different areas of the workpiece to be coated, resulting in a coating film formed on the surface of the workpiece to be coated. The thickness is inconsistent, which will bring inconsistency in color and optical performance to the end product.
本發明提供了一種磁控濺射鍍膜裝置及其工作方法,以提高製備出的鍍膜厚度的均一性。 The invention provides a magnetron sputtering coating device and a working method thereof to improve the uniformity of the thickness of the prepared coating.
本發明揭露一種磁控濺射鍍膜裝置,包含:真空鍍膜室;可旋轉工件架,可沿其中心軸在真空鍍膜室內旋轉,具有複數個側壁,複數個側壁用於承載待鍍膜工件;至少一個磁控濺射源,設置於真空鍍膜室內,與待鍍膜工件之間具有間隙,用於向待鍍膜工件的表面濺射鍍膜材料顆粒;位置調節裝置,用於調整磁控濺射源的位置,當待鍍膜工件與磁控濺射源的相對位置由中心向邊緣轉動時,位置調節裝置調節磁控濺射源的位置,使磁控濺射源到中心軸的距離逐漸變大。 The invention discloses a magnetron sputtering coating device, which includes: a vacuum coating chamber; a rotatable workpiece frame that can rotate along its central axis in the vacuum coating chamber, and has a plurality of side walls, and the plurality of side walls are used to carry the workpiece to be coated; at least one The magnetron sputtering source is installed in the vacuum coating chamber with a gap between the workpiece to be coated and is used to sputter coating material particles onto the surface of the workpiece to be coated; the position adjustment device is used to adjust the position of the magnetron sputtering source. When the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the center to the edge, the position adjustment device adjusts the position of the magnetron sputtering source so that the distance from the magnetron sputtering source to the central axis gradually becomes larger.
較佳地,當待鍍膜工件與磁控濺射源的相對位置由邊緣向中心轉動時,位置調節裝置調節磁控濺射源到中心軸的距離逐漸減小。 Preferably, when the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the edge to the center, the position adjustment device adjusts the distance between the magnetron sputtering source and the central axis to gradually decrease.
較佳地,中心軸到待鍍膜工件中心的距離為第一距離,中心軸到待鍍膜工件邊緣的距離為第二距離,待鍍膜工件與磁控濺射源的相對位置由中心向邊緣轉動的過程中,位置調節裝置使磁控濺射源移動的距離小於第二距離與第一距離差值的2倍。 Preferably, the distance from the central axis to the center of the workpiece to be coated is the first distance, the distance from the central axis to the edge of the workpiece to be coated is the second distance, and the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the center to the edge. During the process, the position adjustment device moves the magnetron sputtering source less than twice the difference between the second distance and the first distance.
較佳地,待鍍膜工件與磁控濺射源的相對位置由中心向邊緣轉動的過程中,位置調節裝置使磁控濺射源移動的距離小於等於第二距離與第一距離差值。 Preferably, when the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the center to the edge, the position adjustment device moves the magnetron sputtering source by a distance less than or equal to the difference between the second distance and the first distance.
較佳地,待鍍膜工件與磁控濺射源的相對位置由中心向邊緣轉動的過程中,位置調節裝置使磁控濺射源移動的距離大於等於第二距離與第一距離的差值的百分之八十且小於等於第二距離與第一距離的差值的1.2倍。 Preferably, when the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the center to the edge, the position adjustment device moves the magnetron sputtering source by a distance greater than or equal to the difference between the second distance and the first distance. Eighty percent and less than or equal to 1.2 times the difference between the second distance and the first distance.
較佳地,可旋轉工件架沿其中心軸旋轉的過程中,位置調節裝置連續調整磁控濺射源的位置,使磁控濺射源與待鍍膜工件的不同區域相對時,磁控濺射源到待鍍膜工件具有相等的距離。 Preferably, during the rotation of the rotatable workpiece frame along its central axis, the position adjustment device continuously adjusts the position of the magnetron sputtering source, so that when the magnetron sputtering source faces different areas of the workpiece to be coated, the magnetron sputtering There is an equal distance between the source and the workpiece to be coated.
較佳地,待鍍膜工件設置於可旋轉工件架的外側壁,磁控濺射源設於可旋轉工件架外。 Preferably, the workpiece to be coated is arranged on the outer wall of the rotatable workpiece frame, and the magnetron sputtering source is arranged outside the rotatable workpiece frame.
較佳地,待鍍膜工件設置於可旋轉工件架的內側壁,磁控濺射源設於可旋轉工件架內。 Preferably, the workpiece to be coated is arranged on the inner wall of the rotatable workpiece frame, and the magnetron sputtering source is arranged in the rotatable workpiece frame.
較佳地,磁控濺射源的個數大於等於2個,各磁控濺射源的位置能夠獨立控制。 Preferably, the number of magnetron sputtering sources is greater than or equal to 2, and the position of each magnetron sputtering source can be controlled independently.
較佳地,位置調節裝置用於使磁控濺射源朝向中心軸運動或者遠離中心軸運動。 Preferably, the position adjustment device is used to move the magnetron sputtering source toward or away from the central axis.
較佳地,位置調節裝置包含波紋管。 Preferably, the position adjustment device includes a bellows.
較佳地,位置調節裝置用於使磁控濺射源發生擺動,磁控濺射源的擺動方向與可旋轉工件架的旋轉方向相同或相反。 Preferably, the position adjustment device is used to swing the magnetron sputtering source, and the swing direction of the magnetron sputtering source is the same as or opposite to the rotation direction of the rotatable workpiece frame.
較佳地,磁控濺射源擺動的角度小於等於30度。 Preferably, the swing angle of the magnetron sputtering source is less than or equal to 30 degrees.
較佳地,本發明之磁控濺射鍍膜裝置進一步包含:控制器,用於根據可旋轉工件架的旋轉角度確定磁控濺射源與待鍍膜工件的位置關係,以啟動位置調節裝置。 Preferably, the magnetron sputtering coating device of the present invention further includes: a controller for determining the positional relationship between the magnetron sputtering source and the workpiece to be coated according to the rotation angle of the rotatable workpiece frame to start the position adjustment device.
較佳地,各側壁用於承載一個或者複數個待鍍膜工件。 Preferably, each side wall is used to carry one or a plurality of workpieces to be coated.
較佳地,可旋轉工件架為多面體結構,多面體結構包含複數個側壁;複數個側壁為平面,待鍍膜工件為平板型工件。 Preferably, the rotatable workpiece holder has a polyhedral structure, the polyhedral structure includes a plurality of side walls; the plurality of side walls are flat surfaces, and the workpiece to be coated is a flat workpiece.
較佳地,沿可旋轉工件架的高度方向上,磁控濺射源的尺寸大於或等於待鍍膜工件的尺寸。 Preferably, along the height direction of the rotatable workpiece holder, the size of the magnetron sputtering source is greater than or equal to the size of the workpiece to be coated.
較佳地,沿可旋轉工件架的高度方向上,磁控濺射源的尺寸小於待鍍膜工件的尺寸,控濺射鍍膜裝置進一步包含:高度調節裝置,用於使磁控濺射源沿可旋轉工件架高度方向移動。 Preferably, along the height direction of the rotatable workpiece frame, the size of the magnetron sputtering source is smaller than the size of the workpiece to be coated, and the sputtering coating device further includes: a height adjustment device for adjusting the magnetron sputtering source along the height direction of the rotatable workpiece frame. The rotating workpiece holder moves in the height direction.
相應的,本發明進一步提供一種上述磁控濺射鍍膜裝置的工作方法,包含:提供上述磁控濺射鍍膜裝置;當待鍍膜工件與磁控濺射源相對設置的位置由中心向邊緣轉動時,利用位置調節裝置調整磁控濺射源的位置,使磁控濺射源到中心軸的距離逐漸變大。 Correspondingly, the present invention further provides a working method of the above-mentioned magnetron sputtering coating device, which includes: providing the above-mentioned magnetron sputtering coating device; when the position where the workpiece to be coated and the magnetron sputtering source are arranged relative to each other rotates from the center to the edge. , use the position adjustment device to adjust the position of the magnetron sputtering source so that the distance from the magnetron sputtering source to the central axis gradually becomes larger.
與先前技術相比,本發明技術方案具有以下有益效果:本發明提供的磁控濺射鍍膜裝置中,當待鍍膜工件與磁控濺射源相對設置的位置由中心向邊緣轉動時,利用位置調節裝置調整磁控濺射源的位置,使磁控濺射源到中心軸的距離逐漸變大,則磁控濺射源到待鍍膜工件表面距離的差異較小,因此,有利於提高待鍍膜工件表面形成的鍍膜厚度的均一性。 Compared with the prior art, the technical solution of the present invention has the following beneficial effects: In the magnetron sputtering coating device provided by the present invention, when the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the center to the edge, the position is used to The adjusting device adjusts the position of the magnetron sputtering source so that the distance between the magnetron sputtering source and the central axis gradually becomes larger. Then, the difference in distance between the magnetron sputtering source and the surface of the workpiece to be coated is small. Therefore, it is beneficial to improve the coating efficiency. The uniformity of the thickness of the coating formed on the surface of the workpiece.
1,1’:曲線 1,1’:curve
6:可旋轉工件架 6: Rotatable workpiece holder
61:外側壁 61: Lateral wall
62:內側壁 62: Medial wall
70:磁控濺射源 70: Magnetron sputtering source
71:位置調節裝置 71:Position adjustment device
8:加熱裝置 8:Heating device
9:電漿源 9: Plasma source
10:真空鍍膜室 10: Vacuum coating room
H:高度 H: height
H1:第一距離 H1: first distance
H2:第二距離 H2: second distance
B,N:中心 B,N: center
C1,C2:邊緣 C1,C2: edge
O:中心軸 O: central axis
S:待鍍膜工件 S: Workpiece to be coated
a:方向 a: direction
x:橫坐標 x: abscissa
y:縱坐標 y: vertical coordinate
S1,S2:步驟 S1, S2: steps
圖1是本發明一種磁控濺射鍍膜裝置的俯視示意圖;圖2是圖1中的磁控濺射鍍膜裝置中待鍍膜工件與磁控濺射源相對的區域與待鍍膜工件到中心軸距離的關係圖;圖3是圖1中的磁控濺射鍍膜裝置的一種側視示意圖;圖4是圖1中的磁控濺射鍍膜裝置的另一種側視示意圖;圖5是本發明另一種磁控濺射鍍膜裝置在鍍膜工件邊緣區域與磁控濺射源相對設置時的俯視示意圖;圖6是本發明又一種磁控濺射鍍膜裝置在鍍膜工件邊緣區域與磁控濺射源相對設置時的俯視示意圖;圖7是本發明磁控濺射鍍膜裝置工作方法的流程圖。 Fig. 1 is a schematic top view of a magnetron sputtering coating device of the present invention; Fig. 2 is the area between the workpiece to be coated and the magnetron sputtering source in the magnetron sputtering coating device in Fig. 1 and the distance from the workpiece to be coated to the central axis relationship diagram; Figure 3 is a schematic side view of the magnetron sputtering coating device in Figure 1; Figure 4 is another schematic side view of the magnetron sputtering coating device in Figure 1; Figure 5 is another schematic side view of the present invention A schematic top view of the magnetron sputtering coating device when the edge area of the coated workpiece is opposite to the magnetron sputtering source; Figure 6 is another magnetron sputtering coating device of the present invention when the edge area of the coated workpiece is opposite to the magnetron sputtering source. 7 is a flow chart of the working method of the magnetron sputtering coating device of the present invention.
本發明提供一種磁控濺射鍍膜裝置,包含:真空鍍膜室;可旋轉工件架,可沿其中心軸在真空鍍膜室內旋轉,具有複數個側壁,複數個側壁用於承載待鍍膜工件;至少一個磁控濺射源,設置於真空鍍膜室內,與待鍍膜工件之間具有間隙,用於向待鍍膜工件的表面濺射鍍膜材料顆粒;位置調節裝置,用於調整磁控濺射源的位置,當待鍍膜工件與磁控濺射源的相對位置由中心向邊緣轉動時,位置調節裝置調節磁控濺射源的位置,使磁控濺射源到中心軸的距離逐漸變大。利用磁控濺射鍍膜裝置能夠連續調整磁控濺射源到待鍍膜工件之間的距離,使磁控濺射源到待鍍膜工件不同區域的距離差異較小,所製備出的鍍膜的均一性較好。 The invention provides a magnetron sputtering coating device, which includes: a vacuum coating chamber; a rotatable workpiece frame that can rotate along its central axis in the vacuum coating chamber, and has a plurality of side walls, and the plurality of side walls are used to carry the workpiece to be coated; at least one The magnetron sputtering source is installed in the vacuum coating chamber with a gap between the workpiece to be coated and is used to sputter coating material particles onto the surface of the workpiece to be coated; the position adjustment device is used to adjust the position of the magnetron sputtering source. When the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the center to the edge, the position adjustment device adjusts the position of the magnetron sputtering source so that the distance from the magnetron sputtering source to the central axis gradually becomes larger. The magnetron sputtering coating device can continuously adjust the distance between the magnetron sputtering source and the workpiece to be coated, so that the distance difference between the magnetron sputtering source and different areas of the workpiece to be coated is small, and the uniformity of the prepared coating is Better.
為使本發明的上述目的、特徵和有益效果能夠更為明顯易懂,下面結合附圖對本發明的具體實施例做詳細的說明。 In order to make the above objects, features and beneficial effects of the present invention more obvious and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
圖1是本發明一種磁控濺射鍍膜裝置的俯視示意圖。 Figure 1 is a schematic top view of a magnetron sputtering coating device of the present invention.
請參考圖1,本發明之磁控濺射鍍膜裝置包含:真空鍍膜室10;可旋轉工件架6,可沿其中心軸O在真空鍍膜室10內旋轉,具有複數個側壁,複數個側壁用於承載待鍍膜工件S;至少一個磁控濺射源70,設置於真空鍍膜室10內,與待鍍膜工件S之間具有間隙,用於向待鍍膜工件S的表面濺射鍍膜材料顆粒;位置調節裝置71,用於調整磁控濺射源70的位置,當待鍍膜工件S與磁控濺射源70的相對位置由中心B向邊緣C1轉動時,位置調節裝置71調節磁控濺射源70的位置,使磁控濺射源70到中心軸O的距離逐漸變大。
Please refer to Figure 1. The magnetron sputtering coating device of the present invention includes: a
真空鍍膜室10內為真空環境,待鍍膜工件S表面在真空鍍膜室10內完成鍍膜製程,在待鍍膜工件S表面形成鍍膜。
The
在本實施例中,待鍍膜工件S設於可旋轉工件架6的外側壁61,磁控濺射源70設於可旋轉工件架6外,且磁控濺射源70用於向待鍍膜工件S表面濺射鍍膜材料顆粒,以在待鍍膜工件S表面形成鍍膜。
In this embodiment, the workpiece S to be coated is disposed on the
中心軸O到待鍍膜工件S中心B的距離為第一距離H1,中心軸O到待鍍膜工件S邊緣C1的距離為第二距離H2,由幾何知識可知:多面體結構的面數越多,第一距離H1與第二距離H2的差異越小,相反的,多面體結構的面數越少,第一距離H1與第二距離H2的差異越大。第一距離H1與第二距離H2的差異將決定待鍍膜工件S中心與邊緣所鍍的膜的厚度的差異大小,當第一距離H1與第二距離H2的差異越小,待鍍膜工件S表面所鍍的膜的厚度一致性越好。 The distance from the central axis O to the center B of the workpiece S to be coated is the first distance H1, and the distance from the central axis O to the edge C1 of the workpiece S to be coated is the second distance H2. It can be known from geometric knowledge: the more faces the polyhedral structure has, the The smaller the difference between the first distance H1 and the second distance H2. On the contrary, the smaller the number of faces of the polyhedral structure, the larger the difference between the first distance H1 and the second distance H2. The difference between the first distance H1 and the second distance H2 will determine the difference in thickness of the film coated at the center and edge of the workpiece S to be coated. When the difference between the first distance H1 and the second distance H2 is smaller, the surface of the workpiece S to be coated will be smaller. The better the thickness consistency of the deposited film.
在本實施例中,以可旋轉工件架6為六面體為例進行說明,相應的,可旋轉工件架6具有6個外側壁61,且6個外側壁61為平面,待鍍膜工件S為平板型工件。在其他實施例中,可旋轉工件架為其它多面體結構。
In this embodiment, the
可旋轉工件架6沿其中心軸O旋轉的過程中,位置調節裝置71能夠連續調整磁控濺射源70的位置,在圖1中,以平行於外側壁61建立橫坐標x,以垂直於外側壁61建立縱坐標y,且縱坐標y經過中心軸O,縱坐標y與橫坐標x的交點為待鍍膜工件S的中心B,待鍍膜工件S中心B兩側的橫坐標具有邊緣C1、C2,以下結合圖2進行詳細說明:圖2是圖1中的磁控濺射鍍膜裝置中待鍍膜工件S與磁控濺射源70相對的區域與待鍍膜工件到中心軸O距離的關係圖。
During the rotation of the
請參考圖2,橫坐標x代表待鍍膜工件S與磁控濺射源70的相對區域,縱坐標y代表磁控濺射源70到中心軸O的距離。
Please refer to Figure 2. The abscissa x represents the relative area between the workpiece S to be coated and the
其中,待鍍膜工件S與磁控濺射源70相對是指:定義磁控濺射源70的中心為N,當待鍍膜工件S上的某一點位於ON連線上,則認為待鍍膜工件S的該點與磁控濺射源70相對。
Among them, the relative position between the workpiece S to be coated and the
請結合圖1和圖2,當待鍍膜工件S與磁控濺射源70的相對位置由中心B向邊緣C1轉動時,利用位置調節裝置71調節磁控濺射源70的位置,使磁控濺射源70到中心軸O的距離逐漸變大(見圖2中曲線1’),則待鍍膜工件S不同
區域與磁控濺射源70之間的距離差異較小,使得磁控濺射源70向待鍍膜工件S表面濺射的鍍膜材料顆粒的量差異較小,則在待鍍膜工件S表面所形成的鍍膜厚度一致性較好。
Please combine Figure 1 and Figure 2. When the relative position of the workpiece S to be coated and the
具體來說,在待鍍膜工件S與磁控濺射源70的相對位置由中心B向邊緣C1轉動的過程中,當位置調節裝置71使磁控濺射源70移動的距離小於第二距離H2與第一距離H1之差時,磁控濺射源70與待鍍膜工件S中心B的距離略大於磁控濺射源70到邊緣C1的距離,使待鍍膜工件S中心鍍膜的厚度略薄於邊緣鍍膜的厚度,但此時,邊緣C1與中心B鍍膜厚度的差異在可接受範圍內,即待鍍膜工件S表面鍍膜厚度的一致性較好。
Specifically, when the relative position of the workpiece S to be coated and the
在待鍍膜工件S與磁控濺射源70的相對位置由中心B向邊緣C1轉動的過程中,繼續利用位置調節裝置71使磁控濺射源70移動的距離增大,當磁控濺射源70移動的距離等於第二距離H2與第一距離H1之差時,待鍍膜工件S中心B與邊緣C1到磁控濺射源70的距離相等,則待鍍膜工件S表面不同區域鍍膜厚度的一致性較好。
In the process of the relative position of the workpiece S to be coated and the
在待鍍膜工件S與磁控濺射源70的相對位置由中心B向邊緣C1轉動的過程中,利用位置調節裝置71使磁控濺射源70移動的距離進一步增大,當磁控濺射源70移動的距離大於第二距離H2與第一距離H1之差小於第二距離H2與第一距離H1之差的2倍,使得待鍍膜工件S中心B到磁控濺射源70的距離略小於邊緣C1到磁控濺射源70的距離,使待鍍膜工件S中心鍍膜的厚度略厚於邊緣鍍膜的厚度,但此時,邊緣C1與中心B鍍膜厚度的差異在可接受範圍內,即待鍍膜工件S表面鍍膜厚度的一致性較好。
In the process of the relative position of the workpiece S to be coated and the
在待鍍膜工件S與磁控濺射源70的相對位置由中心B向邊緣C1轉動的過程中,當位置調節裝置71使磁控濺射源70移動的距離大於等於第二距離H2與第一距離H1的差值的百分之八十且小於等於第二距離H2與第一距離H1的
差值的1.2倍,使得待鍍膜工件S中心B與邊緣C1到磁控濺射源70的距離差異更小,有利於進一步待鍍膜工件S表面不同區域鍍膜厚度的一致性。
In the process of the relative position of the workpiece S to be coated and the
請結合圖1和圖2,當待鍍膜工件S與磁控濺射源70相對設置的位置由邊緣C2向中心B轉動時,位置調節裝置71調節磁控濺射源70到中心軸O的距離逐漸減小(見圖2中曲線1),則待鍍膜工件S不同區域與磁控濺射源70之間的距離差異較小,使得磁控濺射源70向待鍍膜工件S表面濺射的鍍膜材料顆粒的量差異較小,則在待鍍膜工件S表面所形成的鍍膜厚度一致性較好。
Please combine Figure 1 and Figure 2. When the relative position of the workpiece S to be coated and the
與待鍍膜工件S與磁控濺射源70的相對位置由中心B向邊緣C1移動的過程相同,當待鍍膜工件S與磁控濺射源70的相對位置由邊緣C2向中心B轉動的過程中,位置調節裝置71使磁控濺射源70調整的距離小於第二距離H2與第一距離H1差值的2倍,使得待鍍膜工件S邊緣C2與中心B的差異較小,有利於提高待鍍膜工件邊緣C2與中心B所形成鍍膜厚度的一致性。
The process of the relative position of the workpiece S to be coated and the
綜上所述,利用位置調節裝置71能夠連續調節磁控濺射源70到待鍍膜工件S表面的距離,使磁控濺射源70到待鍍膜工件S表面的距離差異較小,有利於提高待鍍膜工件S表面鍍膜厚度的一致性。
In summary, the
在本實施例中,在可旋轉工件架6沿其中心軸O旋轉的過程中,位置調節裝置71連續調整磁控濺射源70的位置,使磁控濺射源70與待鍍膜工件S的不同位置相對時,磁控濺射源70到待鍍膜工件S具有相等的距離,使得磁控濺射源70到待鍍膜工件S的距離相同,則在待鍍膜工件S表面所形成的鍍膜的厚度相同。
In this embodiment, during the rotation of the
在本實施例中,位置調節裝置71用於使磁控濺射源70可朝向中心軸O運動或者遠離中心軸O運動。具體來說,位置調節裝置71包含波紋管,波紋管不僅能夠實現磁控濺射源70位置的移動,更能夠進一步在磁控濺射源70在移動的過程中確保真空鍍膜室10內的真空環境不被破壞。
In this embodiment, the
在本實施例中,以磁控濺射源70的個數為3個進行說明,3個磁控濺射源70沿真空鍍膜室10的內側壁均勻分佈。在其他實施例中,磁控濺射源的個數還可以為其他值,當磁控濺射源的個數為複數個時,複數個磁控濺射源沿真空鍍膜室內側壁分佈,且相鄰兩個磁控濺射源之間的距離不等。
In this embodiment, the number of
在本實施例中,設置複數個磁控濺射源70的意義在於:由於可旋轉工件架6沿中心軸O旋轉,使待鍍膜工件S依序經過複數個磁控濺射源70,各磁控濺射源70均用於對待鍍膜工件S表面進行鍍膜,因此,有利於提高待鍍膜工件S的鍍膜效率。
In this embodiment, the significance of arranging a plurality of
在本實施例中,磁控濺射源70的個數大於等於2個,各磁控濺射源的位置能夠獨立控制,使得不同磁控濺射源70到待鍍膜工件S表面距離的調整相互之間不受影響,有利於更精確的提高待鍍膜工件S表面鍍膜厚度的均一性。
In this embodiment, the number of
在一種實施例中,一個磁控濺射源70透過一個位置調節裝置71調整位置。
In one embodiment, the position of a
在另一種實施例中,一個磁控濺射源70透過複數個位置調節裝置71來調整位置。
In another embodiment, the position of a
在本實施例中,以各外側壁61承載一個待鍍膜工件S為例進行說明。在其他實施例中,各外側壁承載複數個待鍍膜工件。
In this embodiment, each
在本實施例中,進一步包含:電漿源9,電漿源9用於產生電漿,濺射過程需要電漿,利用電場加速電漿中的離子轟擊磁控濺射源,磁控濺射源上的顆粒被轟擊後快速向待鍍膜工件表面飛去形成鍍膜。。 In this embodiment, it further includes: plasma source 9. The plasma source 9 is used to generate plasma. The sputtering process requires plasma. The electric field is used to accelerate the ions in the plasma to bombard the magnetron sputtering source. The magnetron sputtering After being bombarded, the particles on the source quickly fly toward the surface of the workpiece to be coated to form a coating. .
在其他實施例中,僅包含磁控濺射源,不包含電漿源。在本實施例中,以電漿源9的個數為1個進行說明,在其他實施例中,電漿源9的個數可以進一步為複數個。 In other embodiments, only a magnetron sputtering source is included and no plasma source is included. In this embodiment, the number of plasma sources 9 is assumed to be one. In other embodiments, the number of plasma sources 9 may be further plural.
在本實施例中,進一步包含:電漿源位置調節裝置,用於調節電漿源9的位置。 In this embodiment, it further includes: a plasma source position adjusting device for adjusting the position of the plasma source 9 .
在本實施例中,進一步包括:加熱裝置8,設於可旋轉工件架6內,用於在濺射過程中對待鍍膜工件S加熱。
In this embodiment, it further includes: a
圖3是圖1中的磁控濺射鍍膜裝置的一種側視示意圖。 FIG. 3 is a schematic side view of the magnetron sputtering coating device in FIG. 1 .
在本實施例中,沿可旋轉工件架6的高度H方向,待鍍膜工件S的個數為兩個。
In this embodiment, along the height H direction of the
在其他實施例中,沿可旋轉工件架的高度方向上,待鍍膜工件的個數為1個,或者,待鍍膜工件的個數大於兩個。 In other embodiments, along the height direction of the rotatable workpiece rack, the number of workpieces to be coated is one, or the number of workpieces to be coated is greater than two.
在本實施例中,待鍍膜工件S為圓形。在其他實施例中,待鍍膜工件的形狀可以進一步為其他形狀。 In this embodiment, the workpiece S to be coated is circular. In other embodiments, the shape of the workpiece to be coated may further be other shapes.
在本實施例中,沿可旋轉工件架6的高度H方向,磁控濺射源70的尺寸等於兩個待鍍膜工件S的尺寸,使得磁控濺射源70對待鍍膜工件S沿可旋轉工件架6高度方向上能夠進行一次性全面鍍膜。
In this embodiment, along the height H direction of the
在其他實施例中,沿可旋轉工件架的高度方向上,磁控濺射源的尺寸大於待鍍膜工件的尺寸,磁控濺射源對待鍍膜工件沿可旋轉工件架的高度方向上能夠進行一次性全面鍍膜。 In other embodiments, along the height direction of the rotatable workpiece frame, the size of the magnetron sputtering source is larger than the size of the workpiece to be coated, and the magnetron sputtering source can perform one operation on the workpiece to be coated along the height direction of the rotatable workpiece frame. Fully coated.
圖4是圖1中的磁控濺射鍍膜裝置的另一種側視示意圖。 FIG. 4 is another schematic side view of the magnetron sputtering coating device in FIG. 1 .
在一種實施例中,沿可旋轉工件架6的高度H方向,磁控濺射源70的小於待鍍膜工件S的尺寸,使得磁控濺射源70僅能對待鍍膜工件S沿可旋轉工件架6高度方向上的部分區域進行鍍膜。磁控濺射鍍膜裝置進一步包含:高度調節裝置,用於使磁控濺射源70沿可旋轉工件架6高度方向進行移動。當利用磁控濺射源70對待鍍膜工件S鍍膜的厚度達到厚度要求後,可以透過高度調節裝置使磁控濺射源70沿可旋轉工件架6的高度方向進行調整,使磁控濺射源70對應待鍍
膜工件S未被濺射的區域,再次利用磁控濺射鍍膜裝置對待鍍膜工件S未被濺射的區域進行濺射,直至待鍍膜工件S的所有區域都被鍍膜。
In one embodiment, along the height H direction of the
在本實施例中,待鍍膜工件S的形狀為方形。在其他實施例中,待鍍膜工件可以進一步為其他形狀。 In this embodiment, the shape of the workpiece S to be coated is square. In other embodiments, the workpiece to be coated may further have other shapes.
圖5是本發明另一種磁控濺射鍍膜裝置的俯視示意圖。 Figure 5 is a schematic top view of another magnetron sputtering coating device of the present invention.
在本實施例中,待鍍膜工件S位於可旋轉工件架6的內側壁62,磁控濺射源70設於可旋轉工件架6內;加熱裝置8設於可旋轉工件架6外。
In this embodiment, the workpiece S to be coated is located on the
當待鍍膜工件S與磁控濺射源70的相對位置由中心B向邊緣C1轉動的過程中,位置調節裝置71使磁控濺射源70調整的距離小於第二距離H2與第一距離H1差值的2倍,使得待鍍膜工件S邊緣C1與中心B的差異較小,有利於提高待鍍膜工件S邊緣C1與中心B所形成鍍膜厚度的一致性。同樣的,當待鍍膜工件S與磁控濺射源70的相對位置由邊緣C2向中心B轉動的過程中,位置調節裝置71使磁控濺射源70調整的距離小於第二距離H2與第一距離H1差值的2倍,使得待鍍膜工件S邊緣C2與中心B的差異較小,有利於提高待鍍膜工件邊緣C2與中心B所形成鍍膜厚度的一致性。
When the relative position of the workpiece S to be coated and the
圖6是本發明又一種磁控濺射鍍膜裝置的俯視示意圖。 Figure 6 is a schematic top view of yet another magnetron sputtering coating device of the present invention.
在本實施例中,位置調節裝置71沿方向a擺動,帶動磁控濺射源70沿方向a擺動,使待鍍膜工件S邊緣到磁控濺射源70的距離與待鍍膜工件S中心到磁控濺射源70的距離差異較小,有利於提高待鍍膜工件S表面所形成鍍膜的厚度一致性。
In this embodiment, the
在本實施例中,磁控濺射源70擺動的角度小於30度,一方面有利於降低磁控濺射源70擺動的難度,另一方面,使待鍍膜工件S的不同區域與磁控濺射源70相對時的距離差異較小,有利於提高待鍍膜工件S表面所形成鍍膜的厚度均一性。
In this embodiment, the swing angle of the
相應的,本發明進一步提供一種上述磁控濺射鍍膜裝置的工作方法,在下文中進行詳細說明:圖7是本發明磁控濺射鍍膜裝置工作方法的流程圖。 Correspondingly, the present invention further provides a working method of the above-mentioned magnetron sputtering coating device, which will be described in detail below: FIG. 7 is a flow chart of the working method of the magnetron sputtering coating device of the present invention.
請參考圖7,步驟S1:提供上述磁控濺射鍍膜裝置;步驟S2:當待鍍膜工件與磁控濺射源相對設置的位置由中心向邊緣轉動時,利用位置調節裝置調整磁控濺射源的位置,使磁控濺射源到中心軸的距離逐漸變大。 Please refer to Figure 7, Step S1: Provide the above-mentioned magnetron sputtering coating device; Step S2: When the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the center to the edge, use the position adjustment device to adjust the magnetron sputtering The position of the source makes the distance between the magnetron sputtering source and the central axis gradually become larger.
當待鍍膜工件與磁控濺射源相對設置的位置由中心向邊緣轉動時,利用位置調節裝置調整磁控濺射源的位置,使磁控濺射源到中心軸的距離逐漸變大,則磁控濺射源到待鍍膜工件表面距離的差異較小,因此,有利於提高待鍍膜工件表面形成的鍍膜厚度的均一性。 When the relative position of the workpiece to be coated and the magnetron sputtering source rotates from the center to the edge, use the position adjustment device to adjust the position of the magnetron sputtering source so that the distance from the magnetron sputtering source to the central axis gradually becomes larger. The difference in distance between the magnetron sputtering source and the surface of the workpiece to be coated is small. Therefore, it is beneficial to improve the uniformity of the thickness of the coating formed on the surface of the workpiece to be coated.
儘管本發明的內容已經透過上述較佳實施例作了詳細說明,但應當認識到上述的說明不應被認為是對本發明的限制。在本領域具有通常知識者閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。 Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those of ordinary skill in the art upon reading the above. Therefore, the protection scope of the present invention should be limited by the appended patent application scope.
S1,S2:步驟 S1, S2: steps
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CN209816265U (en) * | 2019-04-01 | 2019-12-20 | 贵阳学院 | Sputtering target base with adjustable target position |
CN110438463A (en) * | 2019-07-29 | 2019-11-12 | 光驰科技(上海)有限公司 | A kind of method and its coating apparatus solving coated product horizontal homogeneity |
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