TWI827743B - 離子植入系統及用於提供掃描帶狀離子束的非均勻通量之方法 - Google Patents
離子植入系統及用於提供掃描帶狀離子束的非均勻通量之方法 Download PDFInfo
- Publication number
- TWI827743B TWI827743B TW108143394A TW108143394A TWI827743B TW I827743 B TWI827743 B TW I827743B TW 108143394 A TW108143394 A TW 108143394A TW 108143394 A TW108143394 A TW 108143394A TW I827743 B TWI827743 B TW I827743B
- Authority
- TW
- Taiwan
- Prior art keywords
- workpiece
- ion beam
- flux
- scanner
- ion
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 142
- 230000004907 flux Effects 0.000 title claims abstract description 98
- 238000005468 ion implantation Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000005452 bending Methods 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 24
- 238000012937 correction Methods 0.000 description 12
- 238000004980 dosimetry Methods 0.000 description 8
- 239000007943 implant Substances 0.000 description 7
- 238000002513 implantation Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000003116 impacting effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004091 panning Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1475—Scanning means magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/152—Magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1536—Image distortions due to scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/31708—Ion implantation characterised by the area treated unpatterned
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/218,884 | 2018-12-13 | ||
| US16/218,884 US10553392B1 (en) | 2018-12-13 | 2018-12-13 | Scan and corrector magnet designs for high throughput scanned beam ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202038287A TW202038287A (zh) | 2020-10-16 |
| TWI827743B true TWI827743B (zh) | 2024-01-01 |
Family
ID=69160019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108143394A TWI827743B (zh) | 2018-12-13 | 2019-11-28 | 離子植入系統及用於提供掃描帶狀離子束的非均勻通量之方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10553392B1 (https=) |
| JP (1) | JP7474255B2 (https=) |
| KR (1) | KR102751449B1 (https=) |
| CN (1) | CN113169011B (https=) |
| TW (1) | TWI827743B (https=) |
| WO (1) | WO2020123063A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170005013A1 (en) * | 2015-06-30 | 2017-01-05 | Varian Semiconductor Equipment Associates, Inc. | Workpiece Processing Technique |
| US10553392B1 (en) * | 2018-12-13 | 2020-02-04 | Axcelis Technologies, Inc. | Scan and corrector magnet designs for high throughput scanned beam ion implanter |
| US11217427B1 (en) * | 2020-11-27 | 2022-01-04 | Applied Materials, Inc. | System, apparatus and method for bunched ribbon ion beam |
| US11560995B1 (en) | 2021-07-28 | 2023-01-24 | Hyundai Mobis Co., Ltd. | Lamp for vehicle and vehicle including the same |
| CN117476431B (zh) * | 2023-12-28 | 2024-04-12 | 杭州泽天春来科技股份有限公司 | 四极杆射频电源扫描控制方法、系统及可读存储介质 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834786A (en) * | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
| US20080067436A1 (en) * | 2006-09-19 | 2008-03-20 | Axcelis Technologies, Inc. | System for magnetic scanning and correction of an ion beam |
| TW200926326A (en) * | 2007-09-28 | 2009-06-16 | Varian Semiconductor Equipment | Two-dimensional uniformity correction for ion beam assisted etching |
| TW201222619A (en) * | 2010-05-05 | 2012-06-01 | Axcelis Tech Inc | Throughput enhancement for scanned beam ion implanters |
| TW201334017A (zh) * | 2011-12-13 | 2013-08-16 | Axcelis Tech Inc | 具有改善的生產率和均勻性的離子佈植的系統和方法 |
| TW201705182A (zh) * | 2015-04-23 | 2017-02-01 | 瓦里安半導體設備公司 | 控制植入製程的裝置及離子植入機 |
| US9679739B2 (en) * | 2014-12-26 | 2017-06-13 | Axcelis Technologies, Inc. | Combined electrostatic lens system for ion implantation |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4922106A (en) | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
| JP3567749B2 (ja) | 1998-07-22 | 2004-09-22 | 日新電機株式会社 | 荷電粒子ビームの分布測定方法およびそれに関連する方法 |
| US7550751B2 (en) * | 2006-04-10 | 2009-06-23 | Axcelis Technologies, Inc. | Ion beam scanning control methods and systems for ion implantation uniformity |
| US8138484B2 (en) | 2010-04-28 | 2012-03-20 | Axcelis Technologies Inc. | Magnetic scanning system with improved efficiency |
| CN102779711B (zh) * | 2012-08-01 | 2014-11-05 | 西安工业大学 | 具有超大离子束发散角的离子源 |
| US9029811B1 (en) | 2013-10-22 | 2015-05-12 | Varian Semiconductor Equipment Associates, Inc. | Apparatus to control an ion beam |
| US9520204B2 (en) | 2013-12-26 | 2016-12-13 | Varian Semiconductor Equipment Associates, Inc. | Cold stripper for high energy ion implanter with tandem accelerator |
| JP6195538B2 (ja) * | 2014-04-25 | 2017-09-13 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法及びイオン注入装置 |
| TW201635326A (zh) | 2014-12-26 | 2016-10-01 | 艾克塞利斯科技公司 | 在具有射束減速的離子植入器中用於射束角度調整的系統及方法 |
| US9728371B2 (en) | 2015-05-27 | 2017-08-08 | Nissin Ion Equipment Co., Ltd. | Ion beam scanner for an ion implanter |
| JP6517163B2 (ja) * | 2016-03-18 | 2019-05-22 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置及びスキャン波形作成方法 |
| US10553392B1 (en) * | 2018-12-13 | 2020-02-04 | Axcelis Technologies, Inc. | Scan and corrector magnet designs for high throughput scanned beam ion implanter |
-
2018
- 2018-12-13 US US16/218,884 patent/US10553392B1/en active Active
-
2019
- 2019-11-06 CN CN201980078886.2A patent/CN113169011B/zh active Active
- 2019-11-06 WO PCT/US2019/060084 patent/WO2020123063A1/en not_active Ceased
- 2019-11-06 JP JP2021529313A patent/JP7474255B2/ja active Active
- 2019-11-06 KR KR1020217019690A patent/KR102751449B1/ko active Active
- 2019-11-28 TW TW108143394A patent/TWI827743B/zh active
- 2019-12-19 US US16/720,499 patent/US11037754B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834786A (en) * | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
| US20080067436A1 (en) * | 2006-09-19 | 2008-03-20 | Axcelis Technologies, Inc. | System for magnetic scanning and correction of an ion beam |
| TW200926326A (en) * | 2007-09-28 | 2009-06-16 | Varian Semiconductor Equipment | Two-dimensional uniformity correction for ion beam assisted etching |
| TW201222619A (en) * | 2010-05-05 | 2012-06-01 | Axcelis Tech Inc | Throughput enhancement for scanned beam ion implanters |
| TW201334017A (zh) * | 2011-12-13 | 2013-08-16 | Axcelis Tech Inc | 具有改善的生產率和均勻性的離子佈植的系統和方法 |
| US9679739B2 (en) * | 2014-12-26 | 2017-06-13 | Axcelis Technologies, Inc. | Combined electrostatic lens system for ion implantation |
| TW201705182A (zh) * | 2015-04-23 | 2017-02-01 | 瓦里安半導體設備公司 | 控制植入製程的裝置及離子植入機 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102751449B1 (ko) | 2025-01-07 |
| KR20210099036A (ko) | 2021-08-11 |
| CN113169011A (zh) | 2021-07-23 |
| US20200194221A1 (en) | 2020-06-18 |
| TW202038287A (zh) | 2020-10-16 |
| JP7474255B2 (ja) | 2024-04-24 |
| WO2020123063A1 (en) | 2020-06-18 |
| CN113169011B (zh) | 2024-07-02 |
| JP2022512302A (ja) | 2022-02-03 |
| US11037754B2 (en) | 2021-06-15 |
| US10553392B1 (en) | 2020-02-04 |
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