TWI821986B - Display assembly, display device including the same and manufacturing method of display device - Google Patents
Display assembly, display device including the same and manufacturing method of display device Download PDFInfo
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Abstract
Description
本發明是有關於一種顯示組件、包含其之顯示裝置、以及顯示裝置之製造方法。 The present invention relates to a display component, a display device including the same, and a manufacturing method of the display device.
微型發光二極體(μLED)因其具低功耗、高亮度、高解析度及高色彩飽和度等特性,因而適用於構建μLED顯示裝置之畫素結構。現有的COB(Chip on Board)封裝技術將μLED裸晶晶片用導電膠或絕緣膠固定在印刷電路板(PCB)上。然而,由於PCB的線寬無法微縮,即使μLED晶粒尺寸已大幅縮小,仍無法提高μLED顯示裝置之解析度。再者,PCB基本底板厚度至少0.5mm,封裝後仍有一定的高度與重量。此外,PCB板層多,且價格昂貴。 Micro light-emitting diodes (μLEDs) are suitable for constructing the pixel structure of μLED display devices due to their low power consumption, high brightness, high resolution and high color saturation. The existing COB (Chip on Board) packaging technology fixes the μLED bare chip on the printed circuit board (PCB) with conductive glue or insulating glue. However, since the line width of the PCB cannot be reduced, even if the size of the μLED die has been significantly reduced, the resolution of the μLED display device cannot be improved. Furthermore, the basic PCB base plate thickness is at least 0.5mm, and it still has a certain height and weight after packaging. In addition, PCB has many layers and is expensive.
本發明提供一種顯示組件,具有減小的厚度與重量。 The present invention provides a display assembly with reduced thickness and weight.
本發明提供一種顯示裝置,具有提高的解析度。 The present invention provides a display device with improved resolution.
本發明提供一種顯示裝置之製造方法,具有減少的製造成本。 The present invention provides a manufacturing method of a display device with reduced manufacturing cost.
本發明的一個實施例提出一種顯示組件,包括:基板;多個導電結構,分別貫穿基板;多個發光元件,各發光元件具有第一電極及第二電極,其中,多個發光元件的第一電極電性連接多個導電結構中的同一個導電結構,且多個發光元件的第二電極電性連接多個導電結構中不同的導電結構;以及封裝層,覆蓋多個發光元件。 One embodiment of the present invention provides a display component, including: a substrate; a plurality of conductive structures, respectively penetrating the substrate; a plurality of light-emitting elements, each light-emitting element has a first electrode and a second electrode, wherein the first of the plurality of light-emitting elements The electrodes are electrically connected to the same conductive structure among the plurality of conductive structures, and the second electrodes of the plurality of light-emitting elements are electrically connected to different conductive structures among the plurality of conductive structures; and the encapsulation layer covers the plurality of light-emitting elements.
在本發明的一實施例中,上述的多個發光元件發相同色光或不同色光。 In an embodiment of the present invention, the above-mentioned plurality of light-emitting elements emit light of the same color or different colors.
在本發明的一實施例中,上述的顯示組件還包括色轉換層,位於封裝層與部分的發光元件之間。 In an embodiment of the present invention, the above-mentioned display component further includes a color conversion layer located between the encapsulation layer and part of the light-emitting elements.
在本發明的一實施例中,上述的顯示組件還包括調光層,位於封裝層與色轉換層之間。 In an embodiment of the present invention, the above-mentioned display component further includes a light modulation layer located between the encapsulation layer and the color conversion layer.
在本發明的一實施例中,上述的顯示組件還包括隔離結構,圍繞色轉換層。 In an embodiment of the present invention, the above-mentioned display component further includes an isolation structure surrounding the color conversion layer.
在本發明的一實施例中,上述的顯示組件還包括遮光層,且遮光層於基板的正投影在多個導電結構於基板的正投影之外。 In an embodiment of the present invention, the above-mentioned display component further includes a light-shielding layer, and the orthographic projection of the light-shielding layer on the substrate is outside the orthographic projection of the plurality of conductive structures on the substrate.
在本發明的一實施例中,上述的各導電結構包括位於基板的第一表面上的連接部以及位於基板的通孔中的穿孔部,且連 接部電性連接發光元件與穿孔部。 In an embodiment of the present invention, each of the above-mentioned conductive structures includes a connection portion located on the first surface of the substrate and a through-hole portion located in the through hole of the substrate, and the connection portion is The connecting portion is electrically connected to the light-emitting element and the through-hole portion.
在本發明的一實施例中,上述的多個導電結構的連接部之間的最小間距在發光元件的第一電極與第二電極之間的間距±50%的範圍內。 In an embodiment of the present invention, the minimum spacing between the connecting portions of the plurality of conductive structures is within the range of ±50% of the spacing between the first electrode and the second electrode of the light-emitting element.
在本發明的一實施例中,上述的多個導電結構的連接部之間的最小間距介於1μm至10μm之間。 In an embodiment of the present invention, the minimum spacing between the connecting portions of the plurality of conductive structures is between 1 μm and 10 μm.
本發明的一個實施例提出一種顯示裝置,包括:背板,其表面設置有多個接墊;以及多個上述的顯示組件,分別電性連接多個接墊。 One embodiment of the present invention provides a display device, including: a backplane with a plurality of contact pads provided on its surface; and a plurality of the above-mentioned display components, each of which is electrically connected to the plurality of contact pads.
在本發明的一實施例中,上述的顯示組件的導電結構電性連接接墊與發光元件。 In an embodiment of the present invention, the conductive structure of the above-mentioned display component is electrically connected to the pad and the light-emitting element.
本發明的一個實施例提出一種顯示裝置之製造方法,包括:形成多個導電結構於基板上;設置多個發光元件於多個導電結構上,且各發光元件具有第一電極及第二電極,其中,多個發光元件的第一電極電性連接多個導電結構中的同一個導電結構,且多個發光元件的第二電極電性連接多個導電結構中不同的導電結構;形成封裝層於多個發光元件及基板上;以及切割多個發光元件之間的封裝層及基板,以形成多個顯示組件。 One embodiment of the present invention provides a manufacturing method of a display device, including: forming a plurality of conductive structures on a substrate; disposing a plurality of light-emitting elements on the plurality of conductive structures, and each light-emitting element has a first electrode and a second electrode, Wherein, the first electrodes of the plurality of light-emitting elements are electrically connected to the same conductive structure among the plurality of conductive structures, and the second electrodes of the plurality of light-emitting elements are electrically connected to different conductive structures among the plurality of conductive structures; an encapsulation layer is formed on on a plurality of light-emitting elements and a substrate; and cutting the packaging layer and the substrate between the plurality of light-emitting elements to form a plurality of display components.
在本發明的一實施例中,在上述的形成多個導電結構於基板上之前還包括:形成離型層於載板上;形成金屬層於離型層上;以及形成基板於金屬層上。 In one embodiment of the present invention, before forming the plurality of conductive structures on the substrate, the method further includes: forming a release layer on the carrier; forming a metal layer on the release layer; and forming the substrate on the metal layer.
在本發明的一實施例中,上述的形成多個導電結構於基 板上包括:形成貫穿基板的多個通孔;以及形成多個導電結構於多個通孔中。 In an embodiment of the present invention, the above-mentioned forming of multiple conductive structures is based on the The board includes: forming a plurality of through holes through the substrate; and forming a plurality of conductive structures in the plurality of through holes.
在本發明的一實施例中,在上述的設置多個發光元件於多個導電結構上之前或之後還包括:形成遮光層於基板上。 In an embodiment of the present invention, before or after arranging the plurality of light-emitting elements on the plurality of conductive structures, the method further includes: forming a light-shielding layer on the substrate.
在本發明的一實施例中,上述的遮光層圍繞多個導電結構。 In an embodiment of the present invention, the above-mentioned light-shielding layer surrounds a plurality of conductive structures.
在本發明的一實施例中,在上述的設置多個發光元件於多個導電結構上之後還包括:形成色轉換層於一部分的發光元件上。 In an embodiment of the present invention, after the above-mentioned arranging the plurality of light-emitting elements on the plurality of conductive structures, the method further includes: forming a color conversion layer on a part of the light-emitting elements.
在本發明的一實施例中,上述的形成色轉換層包括:形成分別圍繞多個發光元件的隔離結構;形成色轉換層於一部分的發光元件上;以及形成光學層,且光學層包覆另一部分的發光元件、色轉換層及隔離結構。 In one embodiment of the present invention, the above-mentioned forming the color conversion layer includes: forming an isolation structure surrounding a plurality of light-emitting elements respectively; forming a color conversion layer on a portion of the light-emitting elements; and forming an optical layer, and the optical layer covers another Part of the light-emitting element, color conversion layer and isolation structure.
在本發明的一實施例中,在上述的切割多個發光元件之間的封裝層及基板之前還包括:分離離型層與金屬層;移除金屬層的一部分,且留下金屬層的另一部分;以及對金屬層的另一部分進行電鍍。 In an embodiment of the present invention, before cutting the packaging layer and the substrate between the plurality of light-emitting elements, the method further includes: separating the release layer and the metal layer; removing a part of the metal layer and leaving another part of the metal layer. one part; and electroplating another part of the metal layer.
在本發明的一實施例中,在上述的切割多個發光元件之間的封裝層及基板之後還包括:提供表面設置有多個接墊的背板;以及將多個顯示組件設置於背板的多個接墊上。 In an embodiment of the present invention, after the above-mentioned cutting of the packaging layer and the substrate between the plurality of light-emitting elements, the method further includes: providing a backplane with a plurality of contact pads on the surface; and arranging a plurality of display components on the backplane. on multiple pads.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.
10:顯示裝置 10:Display device
100、200、300:顯示組件 100, 200, 300: display components
110:基板 110:Substrate
111:第一表面 111: First surface
112:第二表面 112: Second surface
120、220、220A、220B:導電結構 120, 220, 220A, 220B: conductive structure
121、221A、221B:連接部 121, 221A, 221B: Connection part
122、222A、222B:穿孔部 122, 222A, 222B: Perforated part
130、230、230A、230B、230C:發光元件 130, 230, 230A, 230B, 230C: light-emitting components
131:發光本體 131: Luminous body
132:第一電極 132:First electrode
133:第二電極 133:Second electrode
140:封裝層 140: Encapsulation layer
320A、320B、320C、320D:導電結構 320A, 320B, 320C, 320D: conductive structure
321A、321B、321C、321D:連接部 321A, 321B, 321C, 321D: Connection part
322A、322B、322C、322D:穿孔部 322A, 322B, 322C, 322D: Perforated part
A-A’、B-B’:剖面線 A-A’, B-B’: hatching line
BK:隔離結構 BK: isolation structure
BM:遮光層 BM: light shielding layer
BP:背板 BP: back panel
CA:載板 CA: carrier board
CP、CP1、CP2、CPa、CPb、CPc、CPd:接墊 CP, CP1, CP2, CPa, CPb, CPc, CPd: pad
CT、CTa、CTc:色轉換層 CT, CTa, CTc: color conversion layer
D1:最小間距 D1: minimum spacing
D2:間距 D2: Spacing
DP:接墊 DP: pad
LS:雷射光束 LS: laser beam
ML:金屬層 ML: metal layer
O1、O2:開口 O1, O2: Open
OC:光學層 OC: optical layer
P1:平坦部 P1: flat part
P2、P21、P22:墊部 P2, P21, P22: Pad part
RL:離型層 RL: release layer
VA、VA1、VA2、VA3、VA4:通孔 VA, VA1, VA2, VA3, VA4: through hole
YL、YLa、YLc:調光層 YL, YLa, YLc: dimming layer
圖1A至圖1M是依照本發明一實施例的顯示裝置10的製造方法的步驟流程的剖面示意圖。
1A to 1M are schematic cross-sectional views of the steps of a manufacturing method of the
圖2A是依照本發明一實施例的顯示組件200的上視示意圖。
FIG. 2A is a schematic top view of a
圖2B是沿圖2A的剖面線A-A’所作的剖面示意圖。 Figure 2B is a schematic cross-sectional view taken along section line A-A' in Figure 2A.
圖2C是沿圖2A的剖面線B-B’所作的剖面示意圖。 Figure 2C is a schematic cross-sectional view taken along section line B-B' of Figure 2A.
圖3A是依照本發明一實施例的顯示組件300的俯視示意圖。
FIG. 3A is a schematic top view of a
圖3B是圖3A的顯示組件300的仰視示意圖。
FIG. 3B is a schematic bottom view of the
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反地,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」或「耦接」可為二元件間存在其它元件。 In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout this specification, the same reference numbers refer to the same elements. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" can mean the presence of other components between two components.
應當理解,儘管術語「第一」、「第二」、「第三」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但 是這些元件、部件、區域、層及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的第一「元件」、「部件」、「區域」、「層」或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。 It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers and/or sections, It is these elements, components, regions, layers and/or sections that should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element", "component", "region", "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.
這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式「一」、「一個」和「該」旨在包括複數形式,包括「至少一個」或表示「及/或」。如本文所使用的,術語「及/或」包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語「包含」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件及/或部件的存在,但不排除一個或多個其它特徵、區域、整體、步驟、操作、元件、部件及/或其組合的存在或添加。 The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms including "at least one" or "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will also be understood that when used in this specification, the terms "comprising" and/or "including" designate the presence of stated features, regions, integers, steps, operations, elements and/or parts, but do not exclude the presence of one or more The presence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下」或「下方」的元件將被定向為在其它元 件「上方」。因此,示例性術語「下」或「下方」可以包括上方和下方的取向。 Additionally, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation illustrated in the figures. For example, if the device in one of the figures is turned over, elements described as "below" other elements would then be oriented "above" the other elements. Thus, the exemplary term "lower" may include both "lower" and "upper" orientations, depending on the particular orientation of the drawing. Similarly, if the device in the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented relative to the other elements. piece "above". Thus, the exemplary terms "lower" or "lower" may include both upper and lower orientations.
考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制),本文使用的「約」、「近似」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值。例如,「約」可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的「約」、「近似」、或「實質上」可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。 As used herein, "about," "approximately," or "substantially" includes the stated value and those within ordinary skill in the art, given the specific amount of error associated with the measurement in question (i.e., the limitations of the measurement system). An average within a range of acceptable deviations for a specific value determined by a person. For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the terms "approximately", "approximately", or "substantially" used in this article can be used to select a more acceptable deviation range or standard deviation based on optical properties, etching properties, or other properties, and one standard deviation does not apply to all. nature.
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。 Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed to have meanings consistent with their meanings in the context of the relevant technology and the present invention, and are not to be construed as idealistic or excessive Formal meaning, unless expressly defined as such herein.
本文參考作為理想化實施例的示意圖的截面圖來描述示例性實施例。因此,可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此,本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀,而是包括例如由製造導致的形狀偏差。例如,示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外,所示的銳角可以是圓的。因此,圖中所示的 區域本質上是示意性的,並且它們的形狀不是旨在示出區域的精確形狀,並且不是旨在限制權利要求的範圍。 Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations in the shape of the illustrations, for example as a result of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, regions shown or described as flat may typically have rough and/or non-linear characteristics. Additionally, the acute angles shown may be rounded. Therefore, as shown in the figure The regions are schematic in nature and their shapes are not intended to illustrate the precise shape of the regions and are not intended to limit the scope of the claims.
圖1A至圖1M是依照本發明一實施例的顯示裝置10的製造方法的步驟流程的剖面示意圖。以下,配合圖式,說明顯示裝置10的製造方法的各個步驟的實施方式,但本發明不以此為限。
1A to 1M are schematic cross-sectional views of the steps of a manufacturing method of the
請參照圖1A,首先,提供載板CA,載板CA例如是用以承載後續製程步驟中所形成的膜層的暫時載具。載板CA的材料可以是玻璃或是其它可適用的材料。 Referring to FIG. 1A , first, a carrier CA is provided. The carrier CA is, for example, a temporary carrier used to carry film layers formed in subsequent process steps. The material of the carrier CA may be glass or other applicable materials.
接著,形成離型層RL於載板CA上,且載板CA可藉由離型層RL而與後續製程步驟中所形成的膜層(例如金屬層ML)分離。離型層RL例如是以塗佈方式形成於載板CA上。離型層RL的材料可包括聚亞醯胺樹脂、二乙基甲醯胺、N-甲基吡咯烷酮、金屬或所述金屬的氧化物,其中所述金屬例如是鈦(Ti)、銅(Cu)、鋁(Al)、銀(Ag)、鐵(Fe)、鎳(Ni)、鉬(Mo)、鎢(W)等,但不以此為限。 Next, a release layer RL is formed on the carrier CA, and the carrier CA can be separated from the film layer (eg, metal layer ML) formed in subsequent process steps by the release layer RL. The release layer RL is formed on the carrier CA by coating, for example. The material of the release layer RL may include polyimide resin, diethylformamide, N-methylpyrrolidone, metal or an oxide of the metal, wherein the metal is, for example, titanium (Ti), copper (Cu ), aluminum (Al), silver (Ag), iron (Fe), nickel (Ni), molybdenum (Mo), tungsten (W), etc., but are not limited to this.
接著,形成金屬層ML於離型層RL上。金屬層ML可以包括平坦部P1及多個墊部P2,且多個墊部P2位於平坦部P1上。在本實施例中,可以採用物理氣相沉積法(例如濺鍍)製程、微影製程以及蝕刻製程來形成金屬層ML,但不以此為限。金屬層ML的材質可以包括導電性良好的金屬或合金,例如鋁、鉬、鈦、銅、鎳、金、錫、銀等金屬、其合金、或其組合。在一些實施例中,金屬層ML可為多層結構,例如包括依續堆疊的鈦層、鋁層 以及鈦層,但不以此為限。 Next, a metal layer ML is formed on the release layer RL. The metal layer ML may include a flat portion P1 and a plurality of pad portions P2, and the plurality of pad portions P2 are located on the flat portion P1. In this embodiment, the metal layer ML may be formed using a physical vapor deposition method (such as sputtering), a photolithography process, and an etching process, but is not limited thereto. The material of the metal layer ML may include metals or alloys with good conductivity, such as aluminum, molybdenum, titanium, copper, nickel, gold, tin, silver and other metals, alloys thereof, or combinations thereof. In some embodiments, the metal layer ML may be a multi-layer structure, for example, including successively stacked titanium layers and aluminum layers. and titanium layer, but not limited to this.
接著,請參照圖1B,形成具有多個通孔VA的基板110於金屬層ML上,且通孔VA可以露出金屬層ML的墊部P2。換言之,通孔VA可以完全重疊金屬層ML的墊部P2。基板110的材質可以是聚醯亞胺(polyimide,PI)、聚碳酸酯(polycarbonate,PC)、聚酯(polyester,PET)、環烯共聚物(cyclic olefin copolymer,COC)、金屬鉻合物基材-環烯共聚物(metallocene-based cyclic olefin copolymer,mCOC)或其他適當材質,但不限於此。另外,基板110也可以具有單層結構或多層結構,多層結構例如上述材料中任意兩層或更多層的疊層,可視需要進行組合與變化。基板110例如是以塗佈方式形成於金屬層ML上,且可以採用微影製程及蝕刻製程來形成通孔VA,但不限於此。
Next, please refer to FIG. 1B , a
接著,請參照圖1C,形成多個導電結構120於基板110的通孔VA中及基板110上。具體而言,導電結構120可以包括位於基板110的第一表面111上的連接部121以及位於基板110的通孔VA中的穿孔部122,且穿孔部122可以電性連接連接部121與金屬層ML的墊部P2。在本實施例中,可以採用物理氣相沉積法(例如濺鍍)製程、微影製程以及蝕刻製程來形成導電結構120。導電結構120的材質可以包括導電性良好的金屬或合金,例如鋁、鉬、鈦、銅、鎳、金、錫、銀等金屬、其合金、或其組合。舉例而言,在一些實施例中,導電結構120的穿孔部122可以包括銅層,且連接部121可以包括依續堆疊的銅層、鎳層以及金層,但
不以此為限。
Next, referring to FIG. 1C , a plurality of
接著,請參照圖1D,形成遮光層BM於基板110上。。遮光層BM例如是以塗佈製程及顯影製程形成於基板110上,但不限於此。遮光層BM可以環繞多個導電結構120且不重疊導電結構120,且可以視需要來決定被遮光層BM環繞的導電結構120的數量。遮光層BM可以遮蔽基板110上的金屬走線對環境光的反射,藉以降低暗態亮度及提高對比度。另外,遮光層BM可以具有多個開口O1,且開口O1於基板110的正投影可以重疊所環繞的導電結構120於基板110的正投影,以免影響後續發光元件的設置。遮光層BM的材質可包括黑色樹脂或是遮光金屬(例如:鉻)等反射性和光穿透率都較低的材料。
Next, please refer to FIG. 1D to form a light-shielding layer BM on the
接著,設置多個發光元件130於導電結構120上。在一些實施例中,也可以先設置多個發光元件130於導電結構120上,之後再形成遮光層BM於基板110上,且遮光層BM於基板110的正投影可以在發光元件130於基板110的正投影之外。發光元件130可以包括發光本體131、第一電極132以及第二電極133,且第一電極132以及第二電極133分別電性連接不同的導電結構120的連接部121。在一些實施例中,第一電極132與連接部121之間以及第二電極133與連接部121之間還可以包括其他導電材料或導電膠。
Then, a plurality of light-emitting
發光元件130可以是於生長基板上製造後,透過巨量轉移製程轉置於基板110上,且第一電極132可充當或電性連接發
光元件130的陽極,第二電極133可充當或電性連接發光元件130的陰極。發光本體131例如可以包括經摻雜的(doped)及未經摻雜的(undoped)半導體材料的疊層,第一電極132以及第二電極133的材質例如可以包括合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物或其他合適的材料、或是金屬材料與其他導電材料的堆疊層、或其他低阻值的材料。在本實施例中,發光元件130的第一電極132以及第二電極133設置在發光本體131的同一側。舉例而言,發光元件130可以是水平式微型發光二極體,但不限於此。在一些實施例中,發光元件130可以是垂直式微型發光二極體。
The light-emitting
接著,請參照圖1E,形成圍繞發光元件130的隔離結構BK,換言之,隔離結構BK可以具有多個開口O2,且每一開口O2於基板110的正投影可以分別重疊一個發光元件130於基板110的正投影。隔離結構BK例如是以塗佈製程及顯影製程形成於基板110上。隔離結構BK的材質例如白色光阻,藉以隔離用於不同顏色轉換的色轉換材料,同時還可避免發光元件130側向混光,且將發光元件130的側向光二次折射至正視角,以增加出光場型。在本實施例中,隔離結構BK可以部分重疊導電結構120,但不以此為限。在一些實施例中,隔離結構BK可以完全不重疊導電結構120,例如隔離結構BK可以設置於導電結構120與遮光層BM之間。
Next, please refer to FIG. 1E to form an isolation structure BK surrounding the light-emitting
接著,請參照圖1F,填充色轉換材料於隔離結構BK內
及發光元件130上,以形成色轉換層CT於發光元件130上。色轉換層CT可以包括螢光粉或類似性質的波長轉換材料,以例如讓發光元件130發出的藍光轉換成紅光或綠光,藉以實現全彩化的顯示效果。因此,可以僅於部分的發光元件130上形成色轉換層CT,而不需於所有的發光元件130上皆形成色轉換層CT。
Next, please refer to Figure 1F, filling the color conversion material in the isolation structure BK
and on the light-emitting
接著,請參照圖1G,可以藉由塗佈的方式形成光學層OC,且光學層OC可以包覆色轉換層CT及隔離結構BK。光學層OC的材質例如透明光阻,但不限於此。光學層OC可以形成平坦的上表面,以利後續製程進行。 Next, please refer to FIG. 1G , the optical layer OC can be formed by coating, and the optical layer OC can cover the color conversion layer CT and the isolation structure BK. The material of the optical layer OC is, for example, transparent photoresist, but is not limited thereto. The optical layer OC can form a flat upper surface to facilitate subsequent processes.
接著,請參照圖1H,可以藉由塗佈製程及顯影製程形成調光層YL於光學層OC上。在一些實施例中,也可以先形成調光層YL於色轉換層CT及隔離結構BK上,之後再形成包覆調光層YL及隔離結構BK的光學層OC。調光層YL的材質例如黃色光阻,但不限於此。 Next, referring to FIG. 1H , the light modulating layer YL can be formed on the optical layer OC through a coating process and a developing process. In some embodiments, the light-modulating layer YL may be formed first on the color conversion layer CT and the isolation structure BK, and then the optical layer OC covering the light-modulating layer YL and the isolation structure BK may be formed. The material of the light modulating layer YL is, for example, yellow photoresist, but is not limited thereto.
接著,請參照圖1I,可以藉由塗佈的方式形成封裝層140,且封裝層140可以包覆調光層YL、光學層OC以及遮光層BM,以對發光元件130及其周圍的部件提供保護。封裝層140的材料可以包括聚合物材料,例如環氧類樹脂,但不以此為限。
Next, please refer to FIG. 1I , the
接著,請參照圖1J,將離型層RL與金屬層ML分離,以移除載板CA且暴露出金屬層ML。在本實施例中,上述分離是藉由熱處理的方式進行,但不以此為限。在一些實施例中,上述分離可以藉由雷射的方式進行。 Next, please refer to FIG. 1J to separate the release layer RL and the metal layer ML to remove the carrier CA and expose the metal layer ML. In this embodiment, the above separation is performed by heat treatment, but it is not limited to this. In some embodiments, the above separation can be performed by laser.
接著,請參照圖1K,移除金屬層ML的平坦部P1,且留下墊部P2。移除金屬層ML的方式可以採用乾蝕刻製程或非等向性蝕刻製程,但不限於此。 Next, please refer to FIG. 1K , the flat portion P1 of the metal layer ML is removed, and the pad portion P2 is left. The metal layer ML may be removed by a dry etching process or an anisotropic etching process, but is not limited thereto.
接著,請參照圖1L,對金屬層ML的墊部P2進行電鍍,以在墊部P2的外表面上形成接墊CP,且接墊CP可以位於基板110的第二表面112上。在本實施例中,接墊CP可以是藉由化學電鍍所形成的鎳層及/或金層,但不限於此。
Next, please refer to FIG. 1L, the pad portion P2 of the metal layer ML is electroplated to form a contact pad CP on the outer surface of the pad portion P2, and the contact pad CP can be located on the
接著,切割發光元件130之間的封裝層140及基板110,以形成顯示組件100。在本實施例中,可以使用雷射光束LS進行上述切割,但不以此為限。在其他實施例中,也可以利用例如刀具或其它適合的用具沿著預定切割線來進行上述切割。
Next, the
接著,請參照圖1M,提供表面設置有多個接墊DP的背板BP,然後將多個顯示組件100設置於背板BP的多個接墊DP上,使得各顯示組件100的兩個接墊CP可以分別電性連接背板BP上的兩個接墊DP,以形成顯示裝置10。在一些實施例中,接墊CP與接墊DP之間還可以藉由導電膠或其他焊料進行電性連接。
Next, please refer to FIG. 1M to provide a backplane BP with a plurality of contact pads DP on the surface, and then dispose
在本實施例中,顯示裝置10可以包括:背板BP,表面設置有多個接墊DP;以及多個顯示組件100,分別電性連接多個接墊DP。舉例而言,各顯示組件100的兩個接墊CP可以分別與背板BP上的兩個接墊DP實體連接,或者,各顯示組件100的接墊CP與背板BP上的接墊DP之間還可以包括其他導電材料或導
電膠來進行電性連接。如此一來,顯示組件100的發光元件130可以通過導電結構120、金屬層ML的墊部P2以及接墊CP電性連接接墊DP。另外,由於顯示裝置10的製造過程中不需使用印刷電路板,因此,可以降低顯示裝置10的製造成本。
In this embodiment, the
以下,使用圖2A至圖3B繼續說明本發明的其他實施例,並且,沿用圖1A至圖1M的實施例的元件標號與相關內容,其中,採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明,可參考圖1A至圖1M的實施例,在以下的說明中不再重述。 In the following, other embodiments of the present invention will be continued to be described using FIGS. 2A to 3B , and the component numbers and related content of the embodiment of FIGS. 1A to 1M will be used, where the same numbers are used to represent the same or similar elements, and Explanations of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the embodiments of FIGS. 1A to 1M , which will not be repeated in the following description.
圖2A是依照本發明一實施例的顯示組件200的上視示意圖。圖2B是沿圖2A的剖面線A-A’所作的剖面示意圖。圖2C是沿圖2A的剖面線B-B’所作的剖面示意圖。為了使圖式的表達較為簡潔,圖2A省略了基板110、封裝層140、隔離結構BK、調光層YLa、YLc、光學層OC以及接墊CP1、CP2。
FIG. 2A is a schematic top view of a
請同時參照圖2A至圖2C,顯示組件200包括:基板110;多個導電結構220,貫穿基板110;多個發光元件230,設置於多個導電結構220上,各發光元件230包括發光本體131、第一電極132及第二電極133;以及封裝層140,覆蓋多個發光元件230。
Please refer to FIGS. 2A to 2C at the same time. The
在本實施例中,顯示組件200的導電結構220可以包括一個導電結構220A以及三個導電結構220B,但不限於此。導電結構220A以及導電結構220B的數量可以視需要決定,例如可以取決於發光元件230的數量。在其他實施例中,顯示組件200可
以包括更多個導電結構220A以及導電結構220B。另外,導電結構220A可以包括位於基板110的第一表面111上的連接部221A以及位於基板110的通孔VA中的穿孔部222A,且連接部221A可以電性連接發光元件230與穿孔部222A,穿孔部222A可以電性連接連接部221A與墊部P21。同樣地,導電結構220B可以包括位於基板110的第一表面111上的連接部221B以及位於基板110的通孔VA中的穿孔部222B,且連接部221B可以電性連接發光元件230與穿孔部222B,穿孔部222B可以電性連接連接部221B與墊部P22。
In this embodiment, the
在本實施例中,顯示組件200的發光元件230可以包括發光元件230A、230B、230C,其中,每一發光元件230A、230B、230C皆包括發光本體131、第一電極132以及第二電極133,發光元件230A、230B、230C的第一電極132皆電性連接至導電結構220A,且發光元件230A、230B、230C的第二電極133分別電性連接至多個分離的導電結構220B。換言之,導電結構220A可以作為顯示組件200的共用電極的一部分。雖然圖2A、圖2C所示的顯示組件200包括各一個發光元件230A、230B、230C,但不以此為限。在某些實施例中,顯示組件200可以包括發光元件230A、230B、230C中的任一者或任兩者。在其他實施例中,顯示組件200可以包括更多的或數量不同的發光元件230A、230B、230C,例如,顯示組件200可以包括各兩個或各三個發光元件230A、230B、230C,或者顯示組件200可以包括兩個發光元件230A
以及各一個發光元件230B、230C。
In this embodiment, the light-emitting
在本實施例中,發光元件230A、230B、230C可以發相同的色光。舉例而言,發光元件230A、230B、230C可以皆發藍光,且發光元件230A上方可以設置色轉換層CTa,例如色轉換層CTa可以位於封裝層140與發光元件230A之間,發光元件230C上方可以設置色轉換層CTc,例如色轉換層CTc可以位於封裝層140與發光元件230C之間,而發光元件230B上可以不設置色轉換層。如此一來,發光元件230A可以藉由色轉換層CTa來將藍光轉換為例如紅光,發光元件230C可以藉由色轉換層CTc來將藍光轉換為例如綠光,使得顯示組件200能夠實現全彩化的顯示效果。
In this embodiment, the light-emitting
在一些實施例中,發光元件230A、230B、230C中至少兩者可以發不同的色光。舉例而言,發光元件230A可以發紅光,發光元件230B及發光元件230C可以皆發藍光,且發光元件230A及發光元件230B上可以不設置色轉換層,發光元件230C上方可以設置色轉換層CTc來將藍光轉換為綠光以實現全彩化。
In some embodiments, at least two of the light-emitting
在一些實施例中,顯示組件200還可以包括調光層YLa、YLc,其中,調光層YLa可以位於封裝層140與色轉換層CTa之間,調光層YLc可以位於封裝層140與色轉換層CTc之間。當色轉換層CTa、CTc無法將發光元件230A、230C所發的藍光完全轉換時,調光層YLa、YLc能夠分別濾除穿過色轉換層CTa、CTc的藍光。
In some embodiments, the
在一些實施例中,顯示組件200還可以包括光學層OC,
光學層OC可以位於封裝層140與發光元件230A、230B、230C之間。舉例而言,在發光元件230B不需設置色轉換層的情況下,光學層OC可以位於封裝層140與發光元件230B之間。在發光元件230A、230C上設置有色轉換層CTa、CTc以及調光層YLa、YLc的情況下,光學層OC可以位於封裝層140或調光層YLa、YLc與色轉換層CTa、CTc之間。在某些實施例中,調光層YLa、YLc可以分別設置於光學層OC與色轉換層CTa、CTc之間。藉由適當選擇光學層OC的折射率,光學層OC能夠防止全反射發生,藉以提升發光元件230A、230B、230C的出光效率。
In some embodiments, the
在一些實施例中,顯示組件200還可以包括隔離結構BK,隔離結構BK可以分別圍繞色轉換層CTa及色轉換層CTc,且在平行於基板110的第一表面111的方向上,隔離結構BK可以位於色轉換層CTa、CTc與光學層OC之間。
In some embodiments, the
在一些實施例中,顯示組件200還可以包括遮光層BM,遮光層BM可以圍繞光學層OC設置,且遮光層BM能夠遮蔽發光元件230A、230B、230C周圍未被光學層OC覆蓋的區域上的金屬走線,藉以避免此些金屬走線因散射所導致的漏光現象。舉例而言,在垂直於基板110的第一表面111的方向上,遮光層BM可以位於封裝層140與基板110之間,且在平行於基板110的第一表面111的方向上,遮光層BM可以位於封裝層140與光學層OC之間。
In some embodiments, the
在一些實施例中,顯示組件200還可以包括接墊CP1、
CP2,接墊CP1、CP2可以位於基板110的第二表面112上,其中,接墊CP1位於墊部P21上與導電結構220A相對的表面上,且接墊CP2位於墊部P22上與導電結構220B相對的表面上。接墊CP1、CP2可以藉由化學電鍍形成,且接墊CP1、CP2的材質可以包括鎳及/或金,但不限於此。由於顯示組件200使用基板110以及導電結構220A、220B來取代印刷電路板,因此顯示組件200能夠具有減小的厚度與重量,且還能夠免除印刷電路板的昂貴成本。
In some embodiments, the
圖3A是依照本發明一實施例的顯示組件300的俯視示意圖。圖3B是圖3A的顯示組件300的仰視示意圖。顯示組件300可以包括:基板110、多個導電結構320A、320B、320C、320D、多個發光元件230A、230B、230C、位於基板110的第二表面112上的接墊CPa、CPb、CPc、CPd以及封裝層140。
FIG. 3A is a schematic top view of a
與如圖2A至圖2C所示的顯示組件200相比,圖3A至圖3B所示的顯示組件300的不同之處在於:顯示組件300的導電結構320A、320B、320C、320D具有不同的線路布局。舉例而言,在本實施例中,導電結構320A可以包括位於基板110的第一表面111上的連接部321A以及位於基板110的通孔VA1中的穿孔部322A,且連接部321A可以電性連接發光元件230A、230B、230C的第一電極132與穿孔部322A,穿孔部322A可以電性連接連接部321A與接墊CPa。導電結構320B可以包括位於基板110的第一表面111上的連接部321B以及位於基板110的通孔VA2中的穿
孔部322B,且連接部321B可以電性連接發光元件230A的第二電極133與穿孔部322B,穿孔部322B可以電性連接連接部321B與接墊CPb。導電結構320C可以包括位於基板110的第一表面111上的連接部321C以及位於基板110的通孔VA3中的穿孔部322C,且連接部321C可以電性連接發光元件230B的第二電極133與穿孔部322C,穿孔部322C可以電性連接連接部321C與接墊CPc。導電結構320D可以包括位於基板110的第一表面111上的連接部321D以及位於基板110的通孔VA4中的穿孔部322D,且連接部321D可以電性連接發光元件230C的第二電極133與穿孔部322D,穿孔部322D可以電性連接連接部321D與接墊CPd。值得注意的是,在本實施例中,連接部321A與連接部321B、321C、321D中任一者之間的最小間距D1能夠等於、實質上等於、近似於或僅些微大於或小於發光元件230A、230B、230C的第一電極132與第二電極133之間的間距D2,例如,最小間距D1可約在間距D2±50%的範圍內,如此一來,便能夠符合間距D2小於10μm的發光元件230A、230B、230C的第一電極132及第二電極133各自與連接部321A、321B、321C、321D進行電性連接所要求的極小間距。在一些實施例中,最小間距D1可以介於1μm至10μm之間,例如最小間距D1可以是2.5μm、3μm或6μm。相較於傳統藉由晶片直接封裝(Chip On Board,COB)技術將晶片封裝於印刷電路板的走線間距需達30μm至40μm,本實施例的顯示組件300的走線最小間距D1能夠小於10μm,如此一來,能夠縮小
顯示組件300的整體尺寸,使得由顯示組件300製成的顯示裝置能夠具有更高的解析度。
Compared with the
綜上所述,本發明的顯示裝置之製造方法不需使用印刷電路板來製造顯示組件及顯示裝置,因此,不僅能夠免除使用印刷電路板所帶來的昂貴成本,同時還能夠減小顯示組件的厚度與重量,而且還能夠縮小顯示組件的整體尺寸,進而提高顯示裝置的解析度。 In summary, the manufacturing method of the display device of the present invention does not require the use of printed circuit boards to manufacture display components and display devices. Therefore, it can not only avoid the expensive costs caused by using printed circuit boards, but also reduce the size of the display components. The thickness and weight of the display device can be reduced, and the overall size of the display component can be reduced, thereby improving the resolution of the display device.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.
300:顯示組件 300: Display component
110:基板 110:Substrate
111:第一表面 111: First surface
230A、230B、230C:發光元件 230A, 230B, 230C: Light-emitting components
132:第一電極 132:First electrode
133:第二電極 133:Second electrode
140:封裝層 140: Encapsulation layer
320A、320B、320C、320D:導電結構 320A, 320B, 320C, 320D: conductive structure
321A、321B、321C、321D:連接部 321A, 321B, 321C, 321D: Connection part
322A、322B、322C、322D:穿孔部 322A, 322B, 322C, 322D: Perforated part
BM:遮光層 BM: light shielding layer
D1:最小間距 D1: minimum spacing
D2:間距 D2: Spacing
VA1、VA2、VA3、VA4:通孔 VA1, VA2, VA3, VA4: through hole
Claims (19)
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040203189A1 (en) * | 2003-03-28 | 2004-10-14 | Gelcore Llc | LED power package |
US20170345802A1 (en) * | 2016-05-31 | 2017-11-30 | Lg Electronics Inc. | Display device using semiconductor light emitting device and fabrication method thereof |
CN110112171A (en) * | 2019-05-21 | 2019-08-09 | 京东方科技集团股份有限公司 | A kind of production method and display panel of display panel |
US20200066693A1 (en) * | 2018-02-13 | 2020-02-27 | Lumens Co., Ltd. | Micro led module with flexible multilayer circuit substrate |
TW202115862A (en) * | 2019-06-14 | 2021-04-16 | 愛爾蘭商艾克斯展示公司技術有限公司 | Pixel modules with controllers and light emitters |
-
2022
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040203189A1 (en) * | 2003-03-28 | 2004-10-14 | Gelcore Llc | LED power package |
US20170345802A1 (en) * | 2016-05-31 | 2017-11-30 | Lg Electronics Inc. | Display device using semiconductor light emitting device and fabrication method thereof |
US20200066693A1 (en) * | 2018-02-13 | 2020-02-27 | Lumens Co., Ltd. | Micro led module with flexible multilayer circuit substrate |
CN110112171A (en) * | 2019-05-21 | 2019-08-09 | 京东方科技集团股份有限公司 | A kind of production method and display panel of display panel |
TW202115862A (en) * | 2019-06-14 | 2021-04-16 | 愛爾蘭商艾克斯展示公司技術有限公司 | Pixel modules with controllers and light emitters |
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