TW202310455A - Light emitting diode package structure, manufacturing method of light emitting diode package structure and light emitting panel - Google Patents

Abstract

A light emitting diode package structure includes a first insulating layer, a first conductive pattern, a second insulating layer, a second conductive pattern, a light-emitting diode element and a solder. The first conductive pattern has a first portion and a second portion, the first portion fills in a through hole of the first insulating layer, and the second portion is disposed on the first insulating layer and connected to the first portion. The second insulating layer is disposed on the first insulating layer and covers the first conductive pattern. The second portion of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer. The second conductive pattern is disposed on the second insulating layer and is electrically connected to the first conductive pattern. The light emitting diode element is bonded to the second conductive pattern. The Solder is disposed on the first portion of the first conductive pattern. In addition, a method for manufacturing the light emitting diode package structure and a light emitting panel including the light emitting diode package structure are also provided.

Description

Light-emitting diode packaging structure, manufacturing method of light-emitting diode packaging structure, and light-emitting panel

The invention relates to a light emitting diode packaging structure, a manufacturing method of the light emitting diode packaging structure and a light emitting panel.

The light emitting diode display panel includes a driving backplane and a plurality of light emitting diode elements transposed on the driving backplane. Inheriting the characteristics of light-emitting diodes, light-emitting diode display panels have the advantages of power saving, high efficiency, high brightness, and fast response time. In addition, compared with organic light-emitting diode display panels, light-emitting diode display panels also have advantages such as easy color adjustment, long luminous life, and no image burn-in. Therefore, LED display panels are regarded as the next generation display technology.

During the manufacturing process of the light emitting diode display panel, it is necessary to transpose a plurality of light emitting diode elements on the driving backplane. In order to improve the transposition yield, multiple light emitting diode elements can be packaged into one light emitting diode packaging structure first, and then the light emitting diode packaging structure can be transposed onto the driving backplane. During the manufacturing process of the light emitting diode packaging structure, solder needs to be formed on the conductive pattern inside the light emitting diode packaging structure, so as to facilitate the bonding of the light emitting diode packaging structure and the driving backplane. However, generally speaking, the solder is formed by an electroless coating process. In the electroless coating process, the internal stress of the film will act on the conductive pattern of the light emitting diode packaging structure, so that the conductive pattern is easy to peel off from the inside of the light emitting diode packaging structure. , affecting the manufacturing yield of the light emitting diode packaging structure.

The invention provides a method for manufacturing a light-emitting diode packaging structure, which can improve the manufacturing yield of the light-emitting diode packaging structure.

The invention provides a light-emitting diode packaging structure with high manufacturing yield.

The invention provides a light-emitting panel with high manufacturing yield.

The manufacturing method of the light emitting diode packaging structure of the present invention comprises the following steps: forming a release layer on the substrate; forming a first insulating layer on the release layer, wherein the first insulating layer has through holes; A first conductive pattern is formed on the first insulating layer, wherein the first part of the first conductive pattern fills the through hole of the first insulating layer, and the second part of the first conductive pattern is arranged on the first insulating layer and connected to the first part; forming a second insulating layer on the layer to cover the first conductive pattern, wherein the second part of the first conductive pattern is interposed between the first insulating layer and the second insulating layer; forming the second conductive pattern on the second insulating layer , wherein the second conductive pattern is electrically connected to the first conductive pattern; the light-emitting diode element is bonded to the second conductive pattern; the release layer is separated from the first insulating layer, and the through hole filled in the first insulating layer is exposed a first portion of the first conductive pattern; and, forming solder on the first portion of the first conductive pattern.

The light emitting diode package structure of the present invention includes a first insulating layer, a first conductive pattern, a second insulating layer, a second conductive pattern, a light emitting diode element and solder. The first insulating layer has through holes. The first conductive pattern has a first part and a second part, the first part is filled into the through hole of the first insulating layer, and the second part is arranged on the first insulating layer and connected with the first part. The second insulating layer is disposed on the first insulating layer and covers the first conductive pattern. The second part of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer. The second conductive pattern is disposed on the second insulating layer and electrically connected to the first conductive pattern. The light emitting diode element is bonded to the second conductive pattern. Solder is disposed on the first portion of the first conductive pattern. The solder and the second conductive pattern are respectively located on opposite sides of the first conductive pattern.

The light-emitting panel of the present invention includes the above-mentioned light-emitting diode packaging structure and a driving backplane, wherein the light-emitting diode packaging structure is bonded to the driving backplane.

In an embodiment of the present invention, the above-mentioned method for manufacturing a light-emitting diode packaging structure further includes: after forming the release layer and before forming the first insulating layer, forming a laser blocking layer on the release layer; and , after separating the release layer and the first insulating layer, removing the laser blocking layer to expose the first portion of the first conductive pattern filling the through hole of the first insulating layer.

In an embodiment of the present invention, the projected area of the above-mentioned first conductive pattern is larger than the projected area of the through hole of the first insulating layer, and the projected area of the through hole of the first insulating layer falls within the projected area of the first conductive pattern within.

In an embodiment of the present invention, the first portion and the second portion of the first conductive pattern define a depression of the first conductive pattern, the second insulating layer has a through hole overlapping the depression, and the second conductive pattern passes through the first conductive pattern. The through holes of the two insulating layers are electrically connected to the first conductive pattern.

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.

It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

As used herein, "about," "approximately," or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the relative A specific amount of measurement-related error (ie, the limit of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Moreover, "about", "approximately" or "substantially" used herein may select a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and may not use one standard deviation to apply to all properties .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.

1A to 1M are schematic cross-sectional views of the manufacturing process of a light-emitting panel according to an embodiment of the present invention.

Please refer to FIG. 1A , firstly, a release layer 120 is formed on the substrate 110 . In this embodiment, the substrate 110 is transparent and can be penetrated by laser; the release layer 120 can be dissociated by laser. For example, in this embodiment, the material of the substrate 110 can be glass, quartz, organic polymer, or other applicable materials, but the invention is not limited thereto.

Referring to FIG. 1B , next, in this embodiment, a laser blocking layer 130 may be optionally formed on the release layer 120 . The laser blocking layer 130 can block the laser to prevent the laser from damaging components formed on the laser blocking layer 130 in subsequent processes. For example, in this embodiment, the material of the laser blocking layer 130 can be metal, but the invention is not limited thereto.

Referring to FIG. 1C , next, a first insulating layer 140 is formed on the release layer 120 , wherein the first insulating layer 140 has through holes 142 . Specifically, in this embodiment, the first insulating layer 140 can be directly formed on the laser blocking layer 130 . However, the present invention is not limited thereto. In another embodiment, the laser blocking layer 130 may also be omitted, and the first insulating layer 140 is directly formed on the release layer 120 . The material of the first insulating layer 140 can be an organic material, an inorganic material or a combination thereof. For example, in this embodiment, the material of the first insulating layer 140 may be polyimide (PI), but the invention is not limited thereto.

Please refer to FIG. 1D, then, a first conductive pattern 150 is formed on the first insulating layer 140, wherein the first portion 151 of the first conductive pattern 150 fills the through hole 142 of the first insulating layer 140, and the first conductive pattern 150 of the first conductive pattern 150 The two parts 152 are disposed on the first insulating layer 140 and connected to the first part 151 . In this embodiment, the projected area of the first conductive pattern 150 is greater than the projected area of the through hole 142 of the first insulating layer 140 , and the projected area of the through hole 142 of the first insulating layer 140 falls within the projected area of the first conductive pattern 150 within the area. For example, in this embodiment, the material of the first conductive pattern 150 can be metal, but the invention is not limited thereto.

In this embodiment, the film thickness T150 of the first conductive pattern 150 can be selectively thinner, and the first portion 151 and the second portion 152 of the first conductive pattern 150 can optionally define the recess 150a of the first conductive pattern 150 , wherein the recess 150 a of the first conductive pattern 150 may overlap the through hole 142 of the first insulating layer 140 . However, the present invention is not limited thereto. In other embodiments, the film thickness T150 of the first conductive pattern 150 may be thicker, and the first conductive pattern 150 may not have the recess 150a.

Referring to FIG. 1E , then, a second insulating layer 160 is formed on the first insulating layer 140 to cover the first conductive pattern 150 . The second insulating layer 160 is disposed on the first insulating layer 140 and covers the first conductive pattern 150 . In particular, the second portion 152 of the first conductive pattern 150 is interposed between the first insulating layer 140 and the second insulating layer 160 . The film thickness T160 of the second insulating layer 160 is greater than the film thickness T150 of the first conductive pattern 150 , and the second insulating layer 160 and the first insulating layer 140 can work together and well. The first conductive pattern 150 is sandwiched. The material of the second insulating layer 160 can be an organic material, an inorganic material or a combination thereof. For example, in this embodiment, the material of the second insulating layer 160 may be polyimide (PI), but the invention is not limited thereto.

Referring to FIG. 1F , next, a second conductive pattern 170 is formed on the second insulating layer 160 . The second conductive pattern 170 is disposed on the second insulating layer 160 , and the second conductive pattern 170 is electrically connected to the first conductive pattern 150 . Specifically, in this embodiment, the second insulating layer 160 has a through hole 162 , and the second conductive pattern 170 is electrically connected to the first conductive pattern 150 through the through hole 162 of the second insulating layer 160 . In this embodiment, the through hole 162 of the second insulating layer 160 may overlap the recess 150 a of the first conductive pattern 150 , but the invention is not limited thereto. In this embodiment, the material of the second conductive pattern 170 is, for example, metal, but the invention is not limited thereto.

Referring to FIG. 1G , next, in this embodiment, a light absorbing layer 180 may be selectively formed on the second insulating layer 160 to cover at least a part of the second conductive pattern 170 . Specifically, in this example. The second conductive pattern 170 may include a pad portion 171 and a conductive portion 172 outside the pad portion 171 , wherein the light absorbing layer 180 covers the conductive portion 172 of the second conductive pattern 170 and exposes the pad portion 171 of the second conductive pattern 170 . For example, in this embodiment, the material of the light absorbing layer 180 can be black resin, but the invention is not limited thereto.

Please refer to FIG. 1H , then, the light emitting diode element 190 is bonded to the second conductive pattern 170 . In detail, in this embodiment, the light emitting diode element 190 is bonded to the pad portion 171 of the second conductive pattern 170 exposed by the light absorbing layer 180 . For example, in this embodiment, the light emitting diode element 190 is, for example, a micro light emitting diode (μLED), but the invention is not limited thereto.

Referring to FIG. 1I , next, in this embodiment, a transparent encapsulation layer 192 is formed on the second insulating layer 160 to cover and protect the light emitting diode element 190 and the second conductive pattern 170 .

Referring to FIG. 1I , FIG. 1J and FIG. 1K , then, the release layer 120 and the first insulating layer 140 are separated, and the first portion 151 of the first conductive pattern 150 filling the through hole 142 of the first insulating layer 140 is exposed. In detail, in this embodiment, a laser de-bonding process may be used first to separate the release layer 120 from the substrate 110; after that, the release layer 120 and the laser blocking layer 130 are removed, The first portion 151 of the first conductive pattern 150 filled in the through hole 142 of the first insulating layer 140 is exposed. For example, in this embodiment, the release layer 120 and the laser blocking layer 130 can be removed by an etching process, but the invention is not limited thereto.

Referring to FIG. 1L , next, solder 194 is formed on the first portion 151 of the first conductive pattern 150 . The solder 194 is disposed on the first portion 151 of the first conductive pattern 150 , and the solder 194 and the second conductive pattern 170 are respectively located on opposite sides of the first conductive pattern 150 . Here, the light emitting diode package structure 100 of this embodiment is completed. For example, in this embodiment, the solder 194 can be formed on the first portion 151 of the first conductive pattern 150 by means of electroless plating; the material of the solder 194 can include nickel and gold, for example; but the present invention is not limited thereto .

It is worth mentioning that since the second portion 152 of the first conductive pattern 150 is sandwiched between the first insulating layer 140 and the second insulating layer 160, even if the thickness difference between the solder 194 and the first conductive pattern 150 is large, However, the internal stress of the film of the first conductive pattern 150 is large, and the first conductive pattern 150 is not easy to peel off from the first insulating layer 140 and the second insulating layer 160 . Thereby, the manufacturing yield of the light emitting diode packaging structure 100 can be improved.

FIG. 2 is a schematic top view of a light emitting diode packaging structure according to an embodiment of the present invention. FIG. 2 omits the illustration of the solder 194 of the light emitting diode package structure 100 .

Please refer to FIG. 1L and FIG. 2. In this embodiment, the same light emitting diode packaging structure 100 may include multiple light emitting diode elements 190, and the multiple light emitting diode elements 190 may be encapsulated by the same transparent package. Layer 192 wraps. For example, in this embodiment, the plurality of light emitting diode elements 190 of the same light emitting diode packaging structure 100 can be respectively a plurality of light emitting diode elements 190 for emitting red light, green light and blue light , but the present invention is not limited thereto.

Referring to FIG. 1L and FIG. 1M , then, the light emitting diode packaging structure 100 is transposed onto the driving backplane 200 , and the light emitting diode packaging structure 100 is bonded to the driving backplane 200 . Here, the light-emitting panel 10 of this embodiment is completed.

In this embodiment, the driving backplane 200 may include a plurality of sub-pixel driving circuits (not shown), and each LED element 190 is electrically connected to a corresponding sub-pixel driving circuit (not shown). For example, in this embodiment, each sub-pixel driving circuit may include a data line (not shown), a scan line (not shown), a power line (not shown), a common line (not shown) , a first transistor (not shown), a second transistor (not shown) and a capacitor (not shown), wherein the first end of the first transistor is electrically connected to the data line, and the control of the first transistor The end is electrically connected to the scan line, the second end of the first transistor is electrically connected to the control end of the second transistor, the first end of the second transistor is electrically connected to the power line, and the capacitor is electrically connected to the first The second terminal of the transistor and the first terminal of the second transistor, the first electrode (not shown) and the second electrode (not shown) of the light-emitting diode element 190 can be respectively electrically connected to the second transistor The second end and the common line, but the present invention is not limited thereto.

10: Luminous panel 100: Light-emitting diode packaging structure 110: Substrate 120: Detachment layer 130: Laser blocking layer 140: the first insulating layer 142, 162: through hole 150: the first conductive pattern 150a: Depression 151: Part 1 152: Part Two 160: second insulating layer 170: the second conductive pattern 171: pad part 172: Conductive part 180: light absorbing layer 190: Light-emitting diode components 192: Transparent encapsulation layer 194: Solder 200: Drive backplane T150, T160: film thickness

1A to 1M are schematic cross-sectional views of the manufacturing process of a light-emitting panel according to an embodiment of the present invention. FIG. 2 is a schematic top view of a light emitting diode packaging structure according to an embodiment of the present invention.

100: Light-emitting diode packaging structure

140: the first insulating layer

142, 162: through hole

150: the first conductive pattern

150a: Depression

151: Part 1

152: Part Two

160: second insulating layer

170: the second conductive pattern

171: pad part

172: Conductive part

180: light absorbing layer

190: Light-emitting diode components

192: Transparent encapsulation layer

194: Solder

T150, T160: film thickness

Claims (10)

A method for manufacturing a light emitting diode packaging structure, comprising: forming a release layer on a substrate; forming a first insulating layer on the release layer, wherein the first insulating layer has a through hole; A first conductive pattern is formed on the first insulating layer, wherein a first part of the first conductive pattern fills the through hole of the first insulating layer, and a second part of the first conductive pattern is disposed on the first insulating layer. on an insulating layer and connected to the first part; forming a second insulating layer on the first insulating layer to cover the first conductive pattern, wherein the second portion of the first conductive pattern is interposed between the first insulating layer and the second insulating layer; forming a second conductive pattern on the second insulating layer, wherein the second conductive pattern is electrically connected to the first conductive pattern; bonding a light emitting diode element to the second conductive pattern; separating the release layer from the first insulating layer, and exposing the first portion of the first conductive pattern filling the through hole of the first insulating layer; and A solder is formed on the first portion of the first conductive pattern. The method for manufacturing a light-emitting diode packaging structure as described in Claim 1, further comprising: After forming the release layer and before forming the first insulating layer, forming a laser blocking layer on the release layer; and After separating the release layer and the first insulating layer, the laser blocking layer is removed to expose the first portion of the first conductive pattern filling the through hole of the first insulating layer. The method for manufacturing a light emitting diode packaging structure according to claim 1, wherein the projected area of the first conductive pattern is larger than the projected area of the through hole of the first insulating layer, and the through hole of the first insulating layer The projected area of falls within the projected area of the first conductive pattern. The method for manufacturing a light-emitting diode packaging structure as claimed in item 1, wherein the first portion and the second portion of the first conductive pattern define a depression of the first conductive pattern, and the second insulating layer has overlapping A through hole is formed in the depression, and the second conductive pattern is electrically connected to the first conductive pattern through the through hole of the second insulating layer. A light emitting diode packaging structure, comprising: a first insulating layer having a through hole; A first conductive pattern, wherein the first conductive pattern has a first portion and a second portion, the first portion fills the through hole of the first insulating layer, and the second portion is disposed on the first insulating layer and connected to the first part; a second insulating layer disposed on the first insulating layer and covering the first conductive pattern, wherein the second part of the first conductive pattern is interposed between the first insulating layer and the second insulating layer ; a second conductive pattern disposed on the second insulating layer and electrically connected to the first conductive pattern; a light emitting diode element bonded to the second conductive pattern; and A solder is disposed on the first portion of the first conductive pattern, wherein the solder and the second conductive pattern are respectively located on opposite sides of the first conductive pattern. The light-emitting diode packaging structure according to claim 5, wherein the projected area of the first conductive pattern is larger than the projected area of the through hole of the first insulating layer, and the projected area of the through hole of the first insulating layer falls within the projected area of the first conductive pattern. The light-emitting diode packaging structure as claimed in claim 5, wherein the first portion and the second portion of the first conductive pattern define a depression of the first conductive pattern, and the second insulating layer has a structure overlapping the depression. A through hole of the second insulating layer, and the second conductive pattern is electrically connected to the first conductive pattern through the through hole of the second insulating layer. A light emitting panel comprising: A light-emitting diode packaging structure, including: a first insulating layer having a through hole; A first conductive pattern, wherein the first conductive pattern has a first portion and a second portion, the first portion fills the through hole of the first insulating layer, and the second portion is disposed on the first insulating layer and connected to the first part; a second insulating layer disposed on the first insulating layer and covering the first conductive pattern, wherein the second part of the first conductive pattern is interposed between the first insulating layer and the second insulating layer ; a second conductive pattern disposed on the second insulating layer and electrically connected to the first conductive pattern; a light emitting diode element bonded to the second conductive pattern; and a solder disposed on the first portion of the first conductive pattern, wherein the solder and the second conductive pattern are respectively located on opposite sides of the first conductive pattern; and A driving backplane, wherein the LED packaging structure is bonded to the driving backplane. The light-emitting panel as claimed in claim 8, wherein the projected area of the first conductive pattern is larger than the projected area of the through hole of the first insulating layer, and the projected area of the through hole of the first insulating layer falls within the first Within the projected area of a conductive pattern. The light-emitting panel as claimed in claim 8, wherein the first portion and the second portion of the first conductive pattern define a depression of the first conductive pattern, and the second insulating layer has a through hole overlapping the depression, And the second conductive pattern is electrically connected to the first conductive pattern through the through hole of the second insulating layer.

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