TWI797790B - Electronic apparatus - Google Patents
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- TWI797790B TWI797790B TW110139104A TW110139104A TWI797790B TW I797790 B TWI797790 B TW I797790B TW 110139104 A TW110139104 A TW 110139104A TW 110139104 A TW110139104 A TW 110139104A TW I797790 B TWI797790 B TW I797790B
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本發明是有關於一種電子裝置。The invention relates to an electronic device.
發光二極體顯示面板包括驅動線路基板及被轉置於驅動線路基板上的多個發光二極體。繼承發光二極體的特性,發光二極體顯示面板具有省電、高效率、高亮度及反應時間快等優點。此外,相較於有機發光二極體顯示面板,發光二極體顯示面板還具有色彩易調校、發光壽命長、無影像烙印等優勢。因此,發光二極體顯示面板被視為下一世代的顯示技術。The light emitting diode display panel includes a driving circuit substrate and a plurality of light emitting diodes transposed on the driving circuit substrate. Inheriting the characteristics of light-emitting diodes, light-emitting diode display panels have the advantages of power saving, high efficiency, high brightness, and fast response time. In addition, compared with organic light-emitting diode display panels, light-emitting diode display panels also have advantages such as easy color adjustment, long luminous life, and no image burn-in. Therefore, LED display panels are regarded as the next generation display technology.
為縮減發光二極體顯示面板的邊框、甚至實現無邊框,設置於驅動線路基板之基底正面上的驅動線路層可利用側邊走線(side wiring)工序電性連接至設置於驅動線路基板之基底背面上的驅動元件,或者可利用側邊接合(side bonding)工序電性連接至設置於驅動線路基板之基底側壁上的驅動元件。然而,側邊走線(side wiring)及側邊接合(side bonding)在製程上皆有不同的困難處,使用側邊走線(side wiring)/或側邊接合(side bonding)製作發光二極體顯示面板的良率不高。In order to reduce the frame of the light-emitting diode display panel, or even achieve no frame, the driving circuit layer disposed on the front side of the substrate of the driving circuit substrate can be electrically connected to the layer disposed on the driving circuit substrate by using a side wiring process. The driving element on the backside of the substrate may be electrically connected to the driving element disposed on the sidewall of the substrate of the driving circuit substrate by using a side bonding process. However, side wiring and side bonding have different difficulties in the manufacturing process. Use side wiring and/or side bonding to make light-emitting diodes The yield rate of bulk display panels is not high.
本發明提供一種電子裝置,容易製造。The invention provides an electronic device which is easy to manufacture.
本發明的電子裝置包括第一基底、第一導電物、第二基底及驅動線路層。第一基底具有貫孔。第一導電物設置於第一基底的貫孔中,且具有凸出於第一基底的凸出部。第二基底具有第一表面、第二表面及貫孔,其中第一表面與第二表面相對,第二基底的貫孔貫穿第二基底的第一表面及第二表面。第一基底及驅動線路層分別設置於第二基底的第一表面及第二表面上。驅動線路層具有與第二基底之貫孔重疊的貫孔。第一導電物的凸出部伸入第二基底的貫孔及驅動線路層的貫孔且電性連接至驅動線路層。The electronic device of the present invention includes a first base, a first conductor, a second base and a driving circuit layer. The first base has through holes. The first conductive object is disposed in the through hole of the first base, and has a protruding portion protruding from the first base. The second base has a first surface, a second surface and a through hole, wherein the first surface is opposite to the second surface, and the through hole of the second base runs through the first surface and the second surface of the second base. The first base and the driving circuit layer are respectively disposed on the first surface and the second surface of the second base. The driving circuit layer has through holes overlapping with the through holes of the second substrate. The protruding portion of the first conductive object extends into the through hole of the second base and the through hole of the driving circuit layer and is electrically connected to the driving circuit layer.
在本發明的一實施例中,上述的第一導電物之凸出部的高度大於第二基底的厚度。In an embodiment of the present invention, the height of the protruding portion of the first conductive material is greater than the thickness of the second base.
在本發明的一實施例中,上述的第一導電物更具有填充部,設置於第一基底的貫孔中,電性連接至第一導電物的凸出部,且重疊於第一導電物的凸起部。In an embodiment of the present invention, the above-mentioned first conductive object further has a filling portion disposed in the through hole of the first substrate, electrically connected to the protruding portion of the first conductive object, and overlapped with the first conductive object of the bulge.
在本發明的一實施例中,上述的第一導電物的填充部與第一導電物的凸出部直接連接且具有一交界面。In an embodiment of the present invention, the above-mentioned filling portion of the first conductive object is directly connected to the protruding portion of the first conductive object and has an interface.
在本發明的一實施例中,上述的第一導電物具有填充部。第一導電物的填充部設置於第一基底的貫孔中。第一導電物的凸出部包括絕緣凸起及導電膜。絕緣凸起設置於第一基底上,且與填充部錯開。導電膜覆蓋絕緣凸起,且電性連接至填充部。In an embodiment of the present invention, the above-mentioned first conductive object has a filling portion. The filled portion of the first conductive material is disposed in the through hole of the first base. The protruding portion of the first conductive object includes an insulating protrusion and a conductive film. The insulating protrusion is disposed on the first base and staggered from the filling part. The conductive film covers the insulating protrusion and is electrically connected to the filling part.
在本發明的一實施例中,上述的第二基底具有定義第二基底之貫孔的內側壁,第一導電物的凸出部與第二基底的內側壁之間存在第一間隙。電子裝置更包括封裝材料,設置於第一間隙。In an embodiment of the present invention, the above-mentioned second base has an inner sidewall defining a through hole of the second base, and a first gap exists between the protruding portion of the first conductive material and the inner sidewall of the second base. The electronic device further includes an encapsulation material disposed in the first gap.
在本發明的一實施例中,上述的驅動線路層具有定義驅動線路層之貫孔的內側壁,第一導電物的凸出部與驅動線路層的內側壁之間存在第二間隙。電子裝置更包括封裝材料,設置於第二間隙。In an embodiment of the present invention, the above-mentioned driving circuit layer has an inner sidewall defining a through hole of the driving circuit layer, and there is a second gap between the protruding portion of the first conductor and the inner sidewall of the driving circuit layer. The electronic device further includes an encapsulation material disposed in the second gap.
在本發明的一實施例中,上述的電子裝置更包括接墊,設置於第一導電物的凸出部及驅動線路層上,且電性連接至第一導電物的凸出部及驅動線路層。In an embodiment of the present invention, the above-mentioned electronic device further includes a contact pad disposed on the protruding portion of the first conductive object and the driving circuit layer, and electrically connected to the protruding portion of the first conductive object and the driving circuit layer layer.
在本發明的一實施例中,上述的第一導電物的凸出部凸出於第一基底的一表面。電子裝置更包括黏著層,設置於第一基底的所述表面與第二基底的第一表面之間。In an embodiment of the present invention, the above-mentioned protruding portion of the first conductive object protrudes from a surface of the first base. The electronic device further includes an adhesive layer disposed between the surface of the first substrate and the first surface of the second substrate.
在本發明的一實施例中,上述的電子裝置更包括第三基底、第二導電物、連接線路層及發光元件。第三基底具有貫孔,其中第一基底設置於第三基底與第二基底之間。第二導電物設置於第三基底的貫孔中,且電性連接至第一導電物。連接線路層設置於第三基底上,且電性連接至第二導電物,其中第三基底設置於連接線路層與第一基底之間。發光元件設置於連接線路層上,且電性連接至連接線路層,其中連接線路層設置於發光元件與第三基底之間。In an embodiment of the present invention, the above-mentioned electronic device further includes a third substrate, a second conductive object, a connection circuit layer, and a light emitting element. The third base has a through hole, wherein the first base is disposed between the third base and the second base. The second conductive object is disposed in the through hole of the third substrate, and is electrically connected to the first conductive object. The connection circuit layer is disposed on the third substrate and is electrically connected to the second conductive object, wherein the third substrate is disposed between the connection circuit layer and the first substrate. The light emitting element is disposed on the connection circuit layer and is electrically connected to the connection circuit layer, wherein the connection circuit layer is disposed between the light emitting device and the third base.
現將詳細地參考本發明的示範性實施例,示範性實施例的實例說明於附圖中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.
應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件“上”或“連接到”另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接”可以指物理及/或電性連接。再者,“電性連接”或“耦合”可以是二元件間存在其它元件。It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.
本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,“約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about," "approximately," or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the relative A specific amount of measurement-related error (ie, the limit of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Moreover, "about", "approximately" or "substantially" used herein may select a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and may not use one standard deviation to apply to all properties .
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.
圖1A至圖1F為本發明一實施例之電子裝置10的製造流程的剖面示意圖。1A to 1F are schematic cross-sectional views of the manufacturing process of an
請參照圖1A至圖1C,首先,提供轉接基板(Transfer Board)100(標示於圖1C),其中轉接基板100包括第一基底110及第一導電物C1,第一基底110具有貫孔112,第一導電物C1設置於第一基底110的貫孔112中且具有凸出於第一基底110的凸出部130。Please refer to FIG. 1A to FIG. 1C. First, a transfer board (Transfer Board) 100 (marked in FIG. 1C ) is provided, wherein the
請參照圖1A,舉例而言,在本實施例中,可先提供具有貫孔112的第一基底110;請參照圖1B,接著,可在貫孔112中形成導電的填充部120;接著,在第一基底110及填充部120上形成導電層130’;請參照圖1B及圖1C,然後,圖案化導電層130’,以形成與填充部120重疊的凸出部130,其中填充部120與凸出部130電性連接成第一導電物C1。在本實施例中,第一導電物C1的填充部120與凸出部130是直接連接而具有一交界面I,但本發明不以此為限。Please refer to FIG. 1A , for example, in this embodiment, a
在本實施例中,可選擇性地利用雷射鑽孔工序形成第一基底110的貫孔112;第一基底110例如是可撓性印刷電路板或是玻璃基板;但本發明不以此為限。在本實施例中,可選擇性地利用電鍍工序或低溫共燒陶瓷(Low Tempertuure Cofired Ceramics;LTCC)工序於貫孔112中形成填充部120;填充部120的材質例如是銅或銀;但本發明不以此為限。在本實施例中,可選擇性地先利用壓合工序形成導電層130’,再圖案化導電層130’以形成凸出部130;導電層130’例如是銅箔;但本發明不以此為限。In this embodiment, the
請參照圖1D,接著,提供驅動線路基板200。驅動線路基板200包括第二基底210及驅動線路層220。第二基底210具有第一表面210a、第二表面210b及貫孔212。第一表面210a與第二表面210b相對。第二基底210的貫孔212貫穿第二基底210的第一表面210a及第二表面210b。驅動線路層220設置於第二基底210的第二表面210b上,且具有與第二基底210之貫孔212重疊的貫孔222。Referring to FIG. 1D , next, a driving
舉例而言,在本實施例中,驅動線路層220可包括主動元件(例如:薄膜電晶體等)及/或被動元件(例如:資料線、掃描線、電源線、共用線、電容等),所述主動元件及/或所述被動元件可由多個導電層224、226所形成,而定義驅動線路層220之貫孔222的內側壁220s可由設置於多個導電層224、226之間的至少一介電層228的側壁所組成,但本發明不以此為限。For example, in this embodiment, the driving
請參照圖1D,接著,組立轉接基板100與驅動線路基板200。意即,使轉接基板100的凸出部130嵌入驅動線路基板200的貫孔212、222,並固接轉接基板100與驅動線路基板200。Referring to FIG. 1D , next, the
舉例而言,在本實施例中,轉接基板100的凸出部130凸出於第一基底110的表面110b,可在轉接基板100之第一基底110的表面110b或驅動線路基板200之第二基底210的第一表面210a上設置於黏著層300;然後,在真空或接近於真空的環境下,對組轉接基板100與驅動線路基板200,使得轉接基板100的第一基底110設置於驅動線路基板200的第二基底210的第一表面210a上、轉接基板100的凸出部130伸入驅動線路基板200的貫孔212、222,且轉接基板100之第一基底110的表面110b與驅動線路基板200之第二基底210的第一表面210a透過黏著層300彼此固接;但本發明不以此為限。黏著層300設置於第一基底110的表面110b與第二基底210的第一表面210a之間。在本實施例中,黏著層300例如是水膠,但本發明不以此為限。For example, in this embodiment, the protruding
請參照圖1D,在本實施例中,轉接基板100之第一導電物C1之凸出部130的高度H大於驅動線路基板200之第二基底210的厚度T。也就是說,在轉接基板100與驅動線路基板200組立後,轉接基板100之第一導電物C1的凸出部130會超出或趨近於驅動線路基板200之第二基底210的第二表面210b。在本實施例中,驅動線路基板200之第二基底210的厚度T例如是落在0.3mm~0.5mm的範圍,但本發明不以此為限。Referring to FIG. 1D , in this embodiment, the height H of the protruding
另外,在本實施例中,轉接基板100的凸出部130嵌入驅動線路基板200的貫孔212、222後,定義貫孔212之第二基底210的內側壁210s與第一導電物C1的凸出部130之間可存在第一間隙g1,定義貫孔222之驅動線路層220的內側壁220s與第一導電物C1的凸出部130之間可存在第二間隙g2,但本發明不以此為限。In addition, in this embodiment, after the protruding
請參照圖1E,接著,電性連接轉接基板100之第一導電物C1的凸出部130與驅動線路基板200的驅動線路層220。Referring to FIG. 1E , next, electrically connect the protruding
舉例而言,在本實施例中,可在第一間隙g1、第二間隙g2、驅動線路基板200的驅動線路層220及第一導電物C1的凸出部130上設置封裝材料400,其中封裝材料400可具有分別重疊於凸出部130及驅動線路層220的第一接觸窗402及第二接觸窗404;接著,在封裝材料400上形成接墊500,其中接墊500設置於第一導電物C1的凸出部130及驅動線路層220上且透過封裝材料400的第一接觸窗402及第二接觸窗404電性連接驅動線路層220及第一導電物C1的凸出部130。藉此,轉接基板100的第一導電物C1便可與驅動線路基板200的驅動線路層220電性連接。在本實施例中,驅動線路基板200的第二基底210可位於轉接基板100的第一基底110與接墊500之間;接墊500用以與一驅動元件,例如:薄膜覆晶封裝(Chip On Film;COF)、晶片或其它種類的電子元件,接合。For example, in this embodiment, the
然而,本發明不限於此,在其它實施例中,轉接基板100的第一導電物C1也可透過其它方式與驅動線路基板200的驅動線路層220電性連接。舉例而言,在另一實施例中,第一導電物C1的凸出部130本身可做為接墊的一部分使用,而驅動元件,例如:薄膜覆晶封裝(Chip On Film;COF)、晶片或其它種類的電子元件,可直接地接合至轉接基板100之第一導電物C1的凸出部130及驅動線路基板200的驅動線路層220上。However, the present invention is not limited thereto. In other embodiments, the first conductive object C1 of the
請參照圖1F,接著,提供發光元件基板600,其中發光元件基板600包括第三基底610、第二導電物620、連接線路層630及發光元件640,第三基底610具有貫孔612,第二導電物620設置於第三基底610的貫孔612中,連接線路層630設置於第三基底610上且電性連接至第二導電物620,發光元件640設置於連接線路層630上且電性連接至連接線路層630。在本實施例,連接線路層630可包括用以與發光元件640接合的接墊及用以電性連接所述接墊與第二導電物620的橋接線路。在本實施例中,發光元件640例如是被轉置到第三基底610上的微型發光二極體(μLED),但本發明不以此為限。此外,在本實施例中,發光元件基板600還可包括保護層650,覆蓋發光元件640。Please refer to FIG. 1F, and then, provide a light-emitting
請參照圖1F,接著,將發光元件基板600設置於已組立完成的轉接基板100及驅動線路基板200上,且使發光元件基板600的第二導電物620與轉接基板100的第一導電物C1電性連接,以形成電子裝置10。在本實施例中,電子裝置10可為微型發光二極體顯示裝置,但本發明不以此為限。Please refer to FIG. 1F , and then, the light-emitting
請參照圖1F,在本實施例中,發光元件基板600的連接線路層630設置於發光元件640與發光元件基板600的第三基底610之間,發光元件基板600的第三基底610設置於連接線路層630與轉接基板100的第一基底110之間,轉接基板100的第一基底110設置於發光元件基板600的第三基底610與驅動線路基板200的第二基底210之間,且驅動線路基板200的第二基底210設置於轉接基板100的第一基底110與驅動線路基板200的驅動電路層200之間。Please refer to FIG. 1F. In this embodiment, the
在本實施例中,發光元件基板600之第三基底610的貫孔612可選擇性地重疊於轉接基板100之第一基底110的貫孔112,設置於第三基底610之貫孔612的第二導電物620與設置於第一基底110之貫孔112的第一導電物C1可選擇性地直接接觸而彼此電性連接。然而,本發明不限於此,在其它實施例中,第一導電物C1及第二導電物620也可透過設置於兩者之間的導體(未繪示)電性連接。In this embodiment, the through
值得一提的是,透過設置於發光元件基板600的貫孔612中的第二導電物620、轉接基板100之伸入驅動線路基板200之貫孔212的第一導電物C1,發光元件640不需透過困難的側邊走線(side wiring)或側邊接合(side bonding)工序便可與驅動元件(例如:薄膜覆晶封裝、晶片或其它種類的電子元件)電性連接,進而被驅動。因此,電子裝置10的良率可提升。It is worth mentioning that, through the
此外,轉接基板100、驅動線路基板200及發光元件基板600是先各自完成後再互相組裝,進而完成電子裝置10。因此,在互相組裝之前,轉接基板100、驅動線路基板200及發光元件基板600可各自進行檢查及/或修補,待檢查正常及/或修補完成後,再行組裝成電子裝置10。因此,電子裝置10的材料成本可降低,且良率可進一步提升。In addition, the
再者,驅動元件(例如:薄膜覆晶封裝)可設置在電子裝置10的背面(即,第二基底210的第二表面210b上)且位於第一導電物C1的凸出部130上,而不需像利用側邊接合(side bonding)工序設置在電子裝置側壁上的驅動元件(例如:薄膜覆晶封裝)般需由電子裝置的側壁彎折至電子裝置的背面而佔用電子裝置之背面的一段距離(例如:0.5mm)。因此,本實施例的電子裝置10的邊框寬度可進一步縮減,甚至實現無邊框。Furthermore, the driving element (for example: a thin film chip-on-chip package) can be disposed on the back of the electronic device 10 (ie, on the
在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重述。It must be noted here that the following embodiments use the component numbers and part of the content of the previous embodiments, wherein the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of omitted parts, reference may be made to the aforementioned embodiments, and the following embodiments will not be repeated.
圖2A至圖2F為本發明另一實施例之電子裝置10A的製造流程的剖面示意圖。2A to 2F are schematic cross-sectional views of the manufacturing process of an
圖2A至圖2F之電子裝置10A及其製造流程與圖1A至圖1F之電子裝置10A及其製造流程類似,兩者的差異在於:電子裝置10A的凸出部130A及其製造流程與電子裝置10的凸出部130及其製造流程不同。The
請參照圖2B及圖2C,具體而言,在本實施例中,是在第一基底110上形成與填充部120錯開的絕緣凸起132;然後,在絕緣凸起132及第一基底110上形成導電膜134,其中導電膜134共形地覆蓋絕緣凸起132且電性連接至填充部120。在本實施例中,第一導電物C1的凸起部130A是由絕緣凸起132及導電膜134所組成。Please refer to FIG. 2B and FIG. 2C. Specifically, in this embodiment, an insulating
10、10A:電子裝置10, 10A: electronic device
100:轉接基板100:Transfer substrate
110:第一基底110: First base
110b:表面110b: surface
112、212、222、612:貫孔112, 212, 222, 612: through hole
120:填充部120: filling part
130、130A:凸出部130, 130A: protruding part
130’、224、226:導電層130', 224, 226: conductive layer
132:絕緣凸起132: Insulation bump
134:導電膜134: Conductive film
200:驅動線路基板200: Drive circuit substrate
210:第二基底210:Second Base
210a:第一表面210a: first surface
210b:第二表面210b: second surface
210s、220s:內側壁210s, 220s: inner wall
220:驅動線路層220: Drive circuit layer
228:介電層228: dielectric layer
300:黏著層300: Adhesive layer
400:封裝材料400: Encapsulation material
402:第一接觸窗402: first contact window
404:第二接觸窗404: second contact window
500:接墊500: Pad
600:發光元件基板600: Light-emitting element substrate
610:第三基底610: third base
620:第二導電物620: Second Conductor
630:連接線路層630: Connect the line layer
640:發光元件640: light emitting element
650:保護層650: protective layer
C1:第一導電物C1: the first conductor
g1:第一間隙g1: first gap
g2:第二間隙g2: second gap
H:高度H: height
I:交界面I: interface
T:厚度T: Thickness
圖1A至圖1F為本發明一實施例之電子裝置10的製造流程的剖面示意圖。
圖2A至圖2F為本發明另一實施例之電子裝置10A的製造流程的剖面示意圖。
1A to 1F are schematic cross-sectional views of the manufacturing process of an
10:電子裝置 10: Electronic device
100:轉接基板 100:Transfer substrate
110:第一基底 110: First base
110b:表面 110b: surface
112、212、222、612:貫孔 112, 212, 222, 612: through hole
120:填充部 120: filling part
130:凸出部 130: protruding part
200:驅動線路基板 200: Drive circuit substrate
210:第二基底 210:Second Base
210a:第一表面 210a: first surface
210b:第二表面 210b: second surface
210s、220s:內側壁 210s, 220s: inner wall
220:驅動線路層 220: Drive circuit layer
224、226:導電層 224, 226: conductive layer
228:介電層 228: dielectric layer
300:黏著層 300: Adhesive layer
400:封裝材料 400: Encapsulation material
402:第一接觸窗 402: first contact window
404:第二接觸窗 404: second contact window
500:接墊 500: Pad
600:發光元件基板 600: Light-emitting element substrate
610:第三基底 610: third base
620:第二導電物 620: Second Conductor
630:連接線路層 630: Connect the line layer
640:發光元件 640: light emitting element
650:保護層 650: protective layer
C1:第一導電物 C1: the first conductor
g1:第一間隙 g1: first gap
g2:第二間隙 g2: second gap
H:高度 H: height
I:交界面 I: interface
T:厚度 T: Thickness
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130299983A1 (en) * | 2005-12-07 | 2013-11-14 | Micron Technology Inc. | Through Wire Interconnect (TWI) For Semiconductor Components Having Wire In Via And Bonded Connection With Substrate Contact |
US20170005027A1 (en) * | 2014-05-09 | 2017-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D Chip-On-Wafer-On-Substrate Structure With Via Last Process |
TW201830608A (en) * | 2016-10-21 | 2018-08-16 | 力成科技股份有限公司 | Chip package structure and manufacturing method thereof |
US20190148222A1 (en) * | 2005-08-11 | 2019-05-16 | Invensas Bonding Technologies, Inc. | 3d ic method and device |
-
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- 2021-10-21 TW TW110139104A patent/TWI797790B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190148222A1 (en) * | 2005-08-11 | 2019-05-16 | Invensas Bonding Technologies, Inc. | 3d ic method and device |
US20130299983A1 (en) * | 2005-12-07 | 2013-11-14 | Micron Technology Inc. | Through Wire Interconnect (TWI) For Semiconductor Components Having Wire In Via And Bonded Connection With Substrate Contact |
US20170005027A1 (en) * | 2014-05-09 | 2017-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D Chip-On-Wafer-On-Substrate Structure With Via Last Process |
TW201830608A (en) * | 2016-10-21 | 2018-08-16 | 力成科技股份有限公司 | Chip package structure and manufacturing method thereof |
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