TWI819776B - Metal-oxide-metal capacitor structure and semiconductor device thereof - Google Patents

Abstract

A metal-oxide-metal (MOM) capacitor structure and a semiconductor device are provided. The MOM capacitor structure includes a first electrode structure arranged on a periphery and a second electrode structure that is surrounded by the first electrode structure. The electrode structure includes one or more metal lines. The first electrode structure and the second electrode structure are spaced with a gap for forming a coupling capacitance between adjacent metal lines of the first and the second electrode structures. The peripheral first electrode structure forms a shielding protection structure for the inside second electrode structure. In a semiconductor device, a plurality of MOM capacitor structures can be electrically connected in parallel and formed on a substrate side by side. The adjacent MOM capacitor structures share the same peripheral first electrode structure.

Description

Metal oxide metal capacitor structure and semiconductor device thereof

The description discloses a capacitor structure, particularly a metal oxide metal capacitor structure in which a peripheral electrode structure forms an internal electrode structure to shield it, and a semiconductor device using this metal oxide metal capacitor structure.

With the development and evolution of manufacturing processes, the chip area is gradually shrinking, because the development of new structural metal capacitors helps reduce the area used. For example, passive components such as capacitors in integrated circuits (ICs) for radio frequency (RF) related applications, one of the most commonly used capacitors is metal-oxide-metal (MOM) capacitors.

According to the design of metal oxide metal capacitors, it is generally a finger structure formed by metal wires. With the advancement of process technology, the metal wires can be closer together. After energization, a coupling effect occurs between the metal wires ( coupling effect), based on which the capacitance value required by the circuit is formed. However, in the conventional technology, the positive electrode (PLUS) of the metal oxide metal capacitor is designed to be connected to different signals, and the negative electrode (MINUS) is designed to be connected to the same signal. However, it cannot be shared and is restricted by spacing rules. Increase the area, and there will be many restrictions on arrangement.

The current design of metal oxide capacitors can be referred to Figures 1 to 3. Figure 1 shows a pair of metal oxide metal structures interlaced in a finger shape and separated by a certain distance. There are multiple layers in the design. After stacking, the metal shown in the figure The first end 101 of the line is used to connect the positive electrode of the circuit, which can be connected to various signal sources, and the second end 102 is used to connect the negative electrode of the circuit, which can be the ground end. After the first terminal 101 and the second terminal 102 are powered on respectively, a coupling capacitance is formed between adjacent metal lines in the metal oxide metal structure connecting the two electrodes.

Figure 2 shows a schematic diagram of a metal oxide metal structure, which shows a capacitor design of two metal oxide metal structures side by side as shown in Figure 1. Similarly, both ends of individual metal oxide metal structures (such as the first end 101 , 101', the second terminal 102, 102') are also connected to the positive and negative poles respectively. According to requirements, a metal oxide metal capacitor in which multiple metal oxide metal structures are arranged in an array as shown in FIG. 3 can also be formed.

When several finger-shaped metal oxide metal capacitors are arranged mutually according to the above-mentioned conventional technology, the capacitance value between adjacent metal lines is easily affected by the surrounding metal layers. For example, Figure 3 shows that between adjacent metal oxide metal structures Parasitic capacitance is easily generated between areas (such as area 301 and area 302 marked in the figure) and causes interference, which will change the overall capacitance value.

In order to solve the problem that the conventional metal oxide metal capacitor structure is limited by design rules, and adjacent metal lines are prone to produce unexpected parasitic capacitance and cause interference, the disclosure proposes a new type of metal oxide metal capacitor structure and its semiconductor device, in which Semiconductor devices can be composed of multiple groups of metal oxide metal capacitor structures arranged. One of the structural features of the device is that multiple groups of metal oxide metal capacitor structures can share electrode terminals (positive electrode (plus) or negative electrode (minus)), and the common electrode terminal connections The same signal, because the shared electrode terminals can also reduce the area, the arrangement is also more flexible.

According to the embodiment, the metal oxide metal capacitor structure is mainly divided into a first electrode structure located on the periphery and a second electrode structure surrounded by the first electrode structure. The first electrode structure and the second electrode structure each consist of one or more layers. Metal lines formed. After circuit layout, the first electrode structure and the second electrode structure are separated by a gap on a substrate to form a coupling capacitance between adjacent metal lines of the first electrode structure and the second electrode structure. And the first electrode structure located on the periphery forms a shielding protection structure for the second electrode structure.

Preferably, the multi-layer metal circuits of the first electrode structure are commonly grounded, and the multi-layer metal circuits of the second electrode structure are respectively connected to the same or different signal sources.

Preferably, the multi-layer metal circuits in the first electrode structure and the second electrode structure are electrically connected to each other through conductive structures, and each conductive structure is also a capacitance value output terminal.

Further, the outermost layer of the multi-layer metal circuit in the first electrode structure and the second electrode structure may be provided with a shielding layer. The shielding layer is formed of an entire surface of metal material formed on a base material, wherein a shielding layer is also provided. There is a conductive structure.

In terms of circuit design, the second electrode structure surrounded by the first electrode structure is an I-shaped structure, a square structure, a cross-shaped structure, a herringbone-shaped structure or a structure formed by a combination of multiple cross-shaped structures, and the first The electrode structure is designed with interpenetrating protruding structures corresponding to multiple turning structures of the second electrode structure. In this way, the second electrode structure can form multiple turning structures through one or more layers of metal lines to establish multiple coupling capacitances with the first electrode structure.

According to the disclosure, a semiconductor device formed using one or more metal oxide metal capacitor structures is proposed, wherein, similarly, the multi-layer metal circuits of the first electrode structure of the metal oxide metal capacitor structure are commonly grounded, and the second electrode structure Multi-layer metal circuits connect the same or different signal sources respectively.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and illustration and are not used to limit the present invention.

The following is a specific example to illustrate the implementation of the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depictions based on actual dimensions, as is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of the present invention.

It should be understood that although terms such as “first”, “second” and “third” may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used in this article shall include any one or combination of more of the associated listed items depending on the actual situation.

The disclosure discloses a metal-oxide-metal (MOM) capacitor structure and its semiconductor device. The metal-oxide-metal capacitor structure is generally designed in a paired finger shape. The paired finger structures can be divided into A finger-like structure and a second finger-like structure, and the first finger-like structure and the second finger-like structure are arranged staggered with each other, so that multi-directional coupling capacitance can be formed between adjacent metal lines to realize the metal oxide metal capacitor structure. It should be mentioned here that the finger-like structure is an overall appearance formed by the superposition of multiple layers, but in fact not every layer is made into a finger-like structure.

FIG. 4 shows an example diagram of an embodiment of a metal oxide metal capacitor structure. Different from the conventional finger-like metal oxide metal capacitor structure formed by interpenetrating each other, this illustration shows a metal oxide metal capacitor structure formed by the metal layer structure of different electrodes in space in a complementary internal and external design. The main structure includes The first electrode structure 401 on the periphery, and the second electrode structure 402 provided on the interior, wherein both the first electrode structure 401 and the second electrode structure 402 can be formed of one or more layers of metal circuits. According to the circuit design of this capacitor structure, the first electrode structure 401 and the second electrode structure 402 are separated by a gap according to the embodiment requirements, so that the adjacent metal lines of the first electrode structure 401 and the second electrode structure 402 can be connected. A coupling capacitance is formed between them. On the other hand, the inner second electrode structure 402 is surrounded by the first electrode structure 401. In one embodiment, the first electrode structure 401 is connected to a common potential, such as ground, so that the first electrode structure 401 located on the periphery can pair The second electrode structure 402 forms a shielding protection structure, so that the formed metal oxide metal capacitor is not susceptible to the capacitance value being affected by the surrounding capacitor metal layer, so the capacitance value is more accurate.

Further, in the embodiment in which the first electrode structure 401 and the second electrode structure 402 are formed with multi-layer metal circuits, the multi-layer metal circuits in the first electrode structure 401 and the second electrode structure 402 are electrically connected to each other through a conductive structure. Connection, for example, the first electrode structure 401 is provided with a first conductive structure 403 that conducts the metal circuits of each layer thereof, and the second electrode structure 402 is provided with a second conductive structure 404 that conducts the metal circuits of each layer thereof. Each of the above metal circuit layers is formed by crisscrossing metal circuits on a base material. The conductive structure between different metal circuit layers can be various forms of conductive structures, such as vias penetrating the base material and then injecting metal. Materials can form conductive structures or other forms of conductors connecting layers. Moreover, each conductive structure can also be an output terminal for deriving a capacitance value for the metal oxide metal capacitor structure.

In one embodiment, the first electrode structure 401 and the second electrode structure 402 are electrically insulated from each other, and can be connected to the ground end and the signal end of the specific signal source through the first conductive structure 403 and the second conductive structure 404 respectively, so as to enable Capacitance is formed between metal lines adjacent to each other.

According to the embodiment of the semiconductor device proposed in the disclosure, the capacitor formed by using one or more metal oxide metal capacitor structures can refer to the parallel type metal oxide metal capacitor structure shown in Figure 5, which shows a plurality of metal oxide metal capacitor structures. The capacitor structures are electrically connected in parallel to each other and are formed side by side on a substrate. The adjacent metal oxide metal capacitor structures share a first electrode structure located on the periphery. As shown in the figure, the capacitor structures include a first electrode structure 401 and a second electrode. The structure 402 forms the first metal oxide metal capacitor structure; similarly, the first electrode structure 401' and the second electrode structure 402' also form the second metal oxide metal capacitor structure; the first electrode structure 401'' and The second electrode structure 402'' forms a third metal oxide metal capacitor structure, and the first electrode structure 401'' and the second electrode structure 402'''' form a fourth metal oxide metal capacitor structure.

As mentioned above, the first electrode structures 401, 401', 401'', 401''' located on the periphery of each metal oxide metal capacitor structure share electrical signals, forming a vertical shared structure between adjacent first electrode structures. 501, and the lateral common structure 502, and the first electrode structure 401, 401', 401'', 401''' can be a ground terminal for the respective second electrode structure 402, 402', 402'', 402' ''In order to form a shielding structure of the internal electrode structure. On the other hand, for the overall metal oxide metal capacitor structure, because the first electrode structure is shared, the overall area can be reduced, the circuit design has area efficiency, and the arrangement is more flexible.

In one embodiment, according to requirements, the structure of Figure 4 or Figure 5 can be repeated, and the semiconductor device formed can refer to the embodiment of the semiconductor device formed by arranging metal oxide metal capacitor structures in an array as shown in Figure 6, in which multiple metal oxide metal capacitor structures are shown. The metal-metal capacitor structures are electrically connected to each other in parallel and are formed side by side on a substrate. The adjacent metal-oxide metal capacitor structures share a first electrode structure located on the periphery. In this way, a larger capacitance value can be provided. Under this requirement, the multi-layer metal circuits of the first electrode structure in each part are commonly grounded, and the multi-layer metal circuits of the second electrode structure can be connected to the same or different signal sources respectively. The disclosure proposes a design that can share electrode structures, which can provide greater area efficiency and form a more meaningful shielding effect.

According to the embodiments of the semiconductor device, the semiconductor device may use one or more metal oxide metal capacitor structures as capacitors in a specific circuit system according to actual needs, wherein each metal oxide metal capacitor structure mainly includes a device as described in the above embodiments. a first electrode structure on the periphery, and a second electrode structure surrounded by the first electrode structure. In particular, each metal oxide metal capacitor structure can be formed by a multi-layer structure, and each layer can be electrically insulated from each other by an insulating structure, and capacitance will also be formed between adjacent metal layers.

The following is a layer by layer description of an embodiment of the metal oxide metal capacitor structure proposed in the disclosure using the example diagrams shown in FIGS. 7 to 13 .

First, FIG. 7 shows an embodiment of a shielding layer 70 in a metal oxide metal capacitor structure. The shielding layer 70 is formed of an entire surface of metal material formed on a substrate. The shielding layer 70 is used to block adjacent metal layers. The influence of the signal lines and external circuits in between becomes the outermost first metal layer and the fifth metal layer in the embodiment of the metal oxide metal capacitor structure as shown in FIG. 14 . The implementation example shown in the figure designs a hollow conductive structure 701 at a specific location in the shielding layer 70. The shape and size of the conductive structure 701 are designed according to actual requirements, and are used to provide a metal oxide metal capacitor structure inside and outside the shielding layer 70. A hollow structure in which circuits are electrically connected to each other.

Figure 8 shows an embodiment of the second metal layer 80 in a metal oxide metal capacitor structure. The second metal layer 80 shown in the figure is composed of a plurality of criss-crossing metal lines formed on a substrate. The second metal layer 80 It is one of the metal layers that generates capacitance in the metal oxide metal capacitor structure.

FIG. 9 shows an embodiment of a third metal layer 90 composed of a plurality of criss-crossing metal lines formed on a substrate in a metal oxide metal capacitor structure, and FIG. 10 shows an implementation of the fourth metal layer 100 The example diagrams are all one of the metal layers that generate capacitance in the capacitor structure.

It should be mentioned here that the multiple metal layers such as the second metal layer 80 , the third metal layer 90 and the fourth metal layer 100 in the above-mentioned metal oxide metal capacitor structure have the same appearance structure, which is a fishbone-shaped structure in this example.

FIG. 11 then shows a schematic diagram of an embodiment of the first capacitor structure 110 in the metal oxide metal capacitor structure, which is composed of the above-mentioned shielding layer 70, the second metal layer 80, and the conductive structures 111 and 112 provided between the two. The first capacitor structure 110 shows that conductive structures 111 and 112 are provided in the criss-crossing metal circuits of each layer to establish electrical connections through vias between each layer. The conductive structures 111 and 112 shown in this example are used to electrically conduct the shielding layer 70 and the second metal layer 80. Compared with the structural design of the conductive structure 701 in the shielding layer 70 shown in Figure 7, the conductive structures 111 and 112 are formed on the conductive structure. In the corresponding position of 701. In this way, the conductive structures 111 and 112 can not only electrically connect the multi-layer metal circuits to each other, but also serve as capacitance value output terminals. For a schematic diagram of the three-dimensional structure, refer to FIG. 14 .

Next, FIG. 12 shows an embodiment diagram of the second capacitor structure 120 in the metal oxide metal capacitor structure. The second capacitor structure 120 electrically conducts the second metal layer 80 and the third metal layer 90 through the conductive structure. The second capacitor structure 120 includes As shown in the figure, there are a plurality of first conductive structures 121 surrounding the outside and a plurality of second conductive structures 122 disposed inside. The first conductive structures 121 and the second conductive structures 122 can be in the form of multiple vias. The electrical connection relationship between the second metal layer 80 and the third metal layer 90 is established, and the capacitance value output terminal of the second capacitor structure 120 can be used for this. The three-dimensional structure schematic diagram can also be referred to FIG. 14 .

FIG. 13 shows an embodiment of the third capacitor structure 130 in the metal oxide metal capacitor structure. The third capacitor structure 130 in this example includes a plurality of third conductive structures 131 surrounding the outer metal structure and an inner fishbone metal. A plurality of fourth conductive structures 132 of the structure. Similarly, the third conductive structure 131 and the fourth conductive structure 132 serve as conductive structures between the inner and outer layers, can electrically conduct the third metal layer 90 and the fourth metal layer 100 in the form of multiple vias (vias), and can be capacitors. Value output terminal, the three-dimensional structure diagram can also refer to Figure 14.

FIG. 14 shows an embodiment diagram of a multi-layer metal oxide metal capacitor structure formed by combining the layer structures of the above embodiment diagrams. It should be mentioned here that the stacked structure of the metal oxide metal capacitor structure shown is determined according to actual needs. The number of metal layers, circuit design, shielding layer design, and the design of the conductive structure can be determined according to actual needs. Changes are not limited to the examples shown and are not limited to this embodiment.

The figure shows the vertical structure of the metal oxide metal capacitor structure. The main structure includes the metal structure shown in the above-mentioned Figures 7 to 13. The schematic diagram ignores the conductive structure shown in the above embodiment. This illustration shows, from bottom to top, the first metal layer formed by the shielding layer 70, the second metal layer 80, the third metal layer 90, the fourth metal layer 100, and the fifth metal layer formed by another shielding layer 70'. Each layer is closely adjacent to each other, and different layers can be electrically connected to each other according to the needs through the conductive structure described in the above embodiment. The stacking sequence of each layer is not limited to that shown in this figure.

This example shows that the first electrode structure and the second electrode structure of adjacent metal layers have multi-layer metal circuits, and the outermost layers are provided with shielding layers 70 and 70' implemented by shielding metal surfaces to shield the metal oxide metal in the semiconductor device. Interference from circuits other than capacitive structures. Moreover, in this multi-layer structure, in addition to the first electrode structure in each layer of metal oxide metal capacitor structure and the surrounding second electrode structure, multiple coupling capacitances can be established through multiple turning structures, and between the multi-layers in the vertical direction Coupling capacitance will also be formed between them.

Further, with reference to the embodiments shown in FIGS. 15 to 17 , the first electrode structure located on the periphery can be designed with interpenetrating protruding structures according to the multiple turning structures of the second electrode structure to form multiple adjacent metal lines. structure, so multiple coupling capacitances can be effectively established.

According to the semiconductor device embodiment, the second electrode structure in each metal oxide metal capacitor structure may be an I-shaped structure, a square structure, a cross-shaped structure, a fishbone-shaped structure, or a combination of multiple cross-shaped structures. formed structure.

According to the schematic diagram of the embodiment shown in Figure 15, a fishbone-shaped internal metal structure 150 is shown, including an external metal structure 151 formed of one or more layers of metal lines. The external metal structure 151 has multiple protruding structures to match the fishbone-shaped structure. The internal metal structures 152 intersect with each other to form capacitance between adjacent metal lines at multiple turns.

The schematic diagram of the embodiment shown in FIG. 16 is a square frame-shaped internal metal structure 160, which includes a frame-shaped external metal structure 161 formed of one or more layers of metal lines and an internal I-shaped internal metal structure 162.

The schematic diagram of the embodiment in Figure 17 shows a cross-shaped internal metal structure 170, which includes an external metal structure 171 and a cross-shaped internal metal structure 172. They are also interspersed with each other in protruding structures, and can also form capacitors at multiple turning points. .

In summary, according to the metal oxide metal (MOM) capacitor structure described in the above embodiments and the semiconductor device composed of one or more metal oxide metal capacitor structures, each of the metal oxide metal capacitor structures has a common The peripheral electrode structure, and the internal electrode structure surrounded by the peripheral electrode structure, and the peripheral electrode structure can prevent the internal electrode structure from being affected, and the capacitance value is not easily affected by the surrounding capacitance metal layer, so the capacitance value is more accurate, and because there is The electrode structure is shared, so additional area efficiency can be obtained. Furthermore, the positive and negative electrodes between different electrodes in the metal oxide metal capacitor structure can exchange their endpoint positions according to design requirements.

The contents disclosed above are only preferred and feasible embodiments of the present invention, and do not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

101,101’: first end

102,102’: second end

301,302:Area

401, 401’, 401’’, 401’’’: first electrode structure

402, 402’, 402’’, 402’’’: second electrode structure

403: First conduction structure

404: Second conduction structure

501,502: shared structure

70,70’: masking layer

701: conduction structure

80: Second metal layer

90:Third metal layer

100: The fourth metal layer

110: First capacitor structure

111,112: conduction structure

120: Second capacitor structure

121: First conduction structure

122: Second conduction structure

130:Third capacitor structure

131:Third conduction structure

132: Fourth conduction structure

150: Fishbone-shaped internal metal structure

151:External metal structure

152:Internal metal structure

160: Square frame internal metal structure

161:External metal structure

162:Internal metal structure

170: Cross-shaped internal metal structure

171:External metal structure

172:Internal metal structure

Figure 1 shows one of the component layout design drawings of a conventional metal oxide metal capacitor;

Figure 2 shows the second component layout design diagram of a conventional metal oxide metal capacitor;

Figure 3 shows the third component layout design diagram of a conventional metal oxide metal capacitor;

Figure 4 shows an example diagram of an embodiment of a metal oxide metal capacitor structure;

Figure 5 shows an embodiment diagram of a semiconductor device formed by two sets of metal oxide metal capacitor structures;

Figure 6 shows an embodiment of a semiconductor device formed by arranging metal oxide metal capacitor structures in an array;

Figure 7 shows an embodiment diagram of the shielding layer (first metal layer, fifth metal layer) in the metal oxide metal capacitor structure;

Figure 8 shows an embodiment diagram of the second metal layer in the metal oxide metal capacitor structure;

Figure 9 shows an embodiment of the third metal layer in the metal oxide metal capacitor structure;

Figure 10 shows an embodiment diagram of the fourth metal layer in the metal oxide metal capacitor structure;

Figure 11 shows an embodiment diagram of the first capacitor structure in the metal oxide metal capacitor structure;

Figure 12 shows an embodiment diagram of the second capacitor structure in the metal oxide metal capacitor structure;

Figure 13 shows an embodiment diagram of the third capacitor structure in the metal oxide metal capacitor structure;

Figure 14 shows an embodiment diagram of a multi-layer metal oxide metal capacitor structure;

Figure 15 shows a schematic diagram of the second embodiment of the metal oxide metal capacitor structure;

Figure 16 shows a schematic diagram of the third embodiment of the metal oxide metal capacitor structure; and

Figure 17 shows a schematic diagram of the fourth embodiment of the metal oxide metal capacitor structure.

401: first electrode

402: Second electrode

403: First conduction structure

404: Second conduction structure

Claims (8)

A metal oxide metal capacitor structure includes: a first electrode structure located on the periphery, formed of one or more layers of metal circuits; and a second electrode structure surrounded by the first electrode structure, the second electrode structure is composed of One or more layers of metal circuits are formed; wherein the first electrode structure and the second electrode structure are separated by a gap, and the second electrode structure surrounded by the first electrode structure forms multiple layers of metal circuits through the one or more layers of metal circuits. A turning structure, and the first electrode structure correspondingly designs interpenetrating protruding structures according to the plurality of turning structures of the second electrode structure, so that a formation is formed between the adjacent metal lines of the first electrode structure and the second electrode structure. There are multiple coupling capacitors, and the first electrode structure located on the periphery forms a shielding protection structure for the second electrode structure. The metal oxide metal capacitor structure of claim 1, wherein the multi-layer metal circuits of the first electrode structure are commonly grounded, and the multi-layer metal circuits of the second electrode structure are respectively connected to the same or different signal sources. The metal oxide metal capacitor structure of claim 2, wherein the multi-layer metal circuits in the first electrode structure and the second electrode structure are electrically connected to each other through conductive structures, and each conductive structure is also a capacitance value output terminal. The metal oxide metal capacitor structure of claim 3, wherein the outermost layer of the multi-layer metal circuits in the first electrode structure and the second electrode structure is provided with a shielding layer, and the shielding layer is formed on a substrate. An entire surface is formed of metal material, and a conductive structure is also provided therein. The metal oxide metal capacitor structure as claimed in claim 1, wherein the second electrode structure is an I-shaped structure, a square structure, a cross-shaped structure, a fishbone-shaped structure or a combination of a plurality of the cross-shaped structures. formed structure. A semiconductor device including: One or more metal oxide metal capacitor structures, wherein each metal oxide metal capacitor structure includes: a first electrode structure located on the periphery, formed of one or more layers of metal circuits; and a first electrode structure surrounded by the first electrode structure The second electrode structure is formed by one or more layers of metal circuits; wherein the first electrode structure and the second electrode structure are separated by a gap, and the second electrode structure is surrounded by the first electrode structure. The electrode structure forms a plurality of turning structures through the one or more layers of metal lines, and the first electrode structure is designed with interpenetrating protruding structures corresponding to the plurality of turning structures of the second electrode structure, so that the first electrode structure and the third electrode structure Multiple coupling capacitances are formed between adjacent metal lines of the two-electrode structure, and the first electrode structure located on the periphery forms a shielding protection structure for the second electrode structure. The semiconductor device of claim 6, wherein the multi-layer metal circuits of the first electrode structure of the metal oxide metal capacitor structure are commonly grounded, and the multi-layer metal circuits of the second electrode structure are respectively connected to the same or different signal sources. The semiconductor device of claim 7, wherein the multi-layer metal circuits in the first electrode structure and the second electrode structure are electrically connected to each other through conductive structures, and each conductive structure is also a capacitance value output terminal.