TWI818994B - Thermosetting resin compositions, films containing the same, and multilayer wiring boards using the same - Google Patents

Thermosetting resin compositions, films containing the same, and multilayer wiring boards using the same Download PDF

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TWI818994B
TWI818994B TW108118316A TW108118316A TWI818994B TW I818994 B TWI818994 B TW I818994B TW 108118316 A TW108118316 A TW 108118316A TW 108118316 A TW108118316 A TW 108118316A TW I818994 B TWI818994 B TW I818994B
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thermosetting resin
resin composition
film
silane coupling
coupling agent
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TW202003690A (en
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黒川津与志
吉田真樹
寺木慎
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日商納美仕股份有限公司
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/02Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/14Peroxides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/54Silicon-containing compounds
    • C08K5/548Silicon-containing compounds containing sulfur
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00Use of pretreated ingredients
    • C08K9/04Ingredients treated with organic substances
    • C08K9/06Ingredients treated with organic substances with silicon-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • C08L71/08Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08L71/10Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C08L71/12Polyphenylene oxides
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits

Abstract

本發明提供以下之薄膜、以及該薄膜之製造中使用之熱硬化性樹脂組成物。該薄膜對於成為印刷基板之配線的金屬箔及基板材料具有優異之接著強度。再者,該薄膜於高頻區域顯示優異電特性。具體而言,該薄膜於頻率1~100GHz之區域顯示低介電率(ε)及低介電正切(tanδ)。進而,該薄膜可於更低溫硬化。 薄膜之製造所用之熱硬化性樹脂組成物含有(A)於末端具有苯乙烯基之熱硬化性樹脂,(B)苯乙烯系熱塑性彈性體,(C)硫醚系矽烷偶合劑,及(D)二烷基過氧化物系自由基聚合起始劑。The present invention provides the following film and a thermosetting resin composition used for production of the film. This film has excellent adhesion strength to metal foil and substrate materials used as wiring on printed circuit boards. Furthermore, the film exhibits excellent electrical properties in the high-frequency region. Specifically, the film shows low dielectric constant (ε) and low dielectric tangent (tanδ) in the frequency range of 1 to 100 GHz. Furthermore, the film can be hardened at lower temperatures. The thermosetting resin composition used for the production of the film contains (A) a thermosetting resin having a styrene group at the end, (B) a styrene-based thermoplastic elastomer, (C) a thioether-based silane coupling agent, and (D) )Dialkyl peroxide-based free radical polymerization initiator.

Description

熱硬化性樹脂組成物、包含其之薄膜,以及使用該等之多層配線板Thermosetting resin compositions, films containing the same, and multilayer wiring boards using the same

本發明係關於熱硬化性樹脂組成物、包含其之樹脂薄膜,以及使用該等之多層配線板。 The present invention relates to a thermosetting resin composition, a resin film containing the same, and a multilayer wiring board using the same.

近年,電氣.電子機器所使用之印刷配線板,已朝機器之小型化、輕量化及高性能化進展。特別是對多層印刷配線板,要求更進一步之高多層化、高密度化、薄型化、輕量化、高信賴性及成形加工性等。 In recent years, electrical. Printed wiring boards used in electronic equipment have been progressing towards miniaturization, weight reduction and high performance of the equipment. In particular, multilayer printed wiring boards are required to have higher multilayering, higher density, thinner thickness, lighter weight, higher reliability, and molding processability.

又,伴隨最近之印刷配線板之傳送信號的高速化要求,傳送信號之高頻化顯著進展。藉此,對於印刷配線板中使用之材料,要求可減低高頻區域具體而言於頻率1GHz以上區域之電信號損失。 In addition, in accordance with the recent demand for high-speed transmission signals on printed wiring boards, the frequency of transmission signals has been significantly advanced. Therefore, materials used in printed wiring boards are required to reduce electrical signal loss in the high-frequency region, specifically in the frequency region above 1 GHz.

另一方面,對於作為多層印刷配線板中使用之層間接著劑,及作為印刷配線板之表面保護薄膜(即,覆蓋薄膜)使用之接著薄膜,要求於高頻區域下顯示優異之電特性(低介電率(ε)及低介電正切(tanδ))。 On the other hand, adhesive films used as interlayer adhesives used in multilayer printed wiring boards and as surface protective films (i.e., cover films) of printed wiring boards are required to exhibit excellent electrical properties in the high-frequency region (low dielectric constant (ε) and low dielectric tangent (tanδ)).

本案申請人,於專利文獻1中,提案樹脂薄膜及該樹脂薄膜之製造所用之樹脂組成物。該樹脂薄膜對 於成為FPC之配線的金屬箔及聚醯亞胺薄膜等之FPC的基板材料具有優異接著強度。且該樹脂薄膜於頻率1~10GHz之高頻區域顯示優異之電特性。具體而言,該樹脂薄膜於頻率1~10GHz之區域顯示低介電率(ε)及低介電正切(tanδ)。 The applicant of this case proposes a resin film and a resin composition used for manufacturing the resin film in Patent Document 1. This resin film is It has excellent bonding strength to FPC substrate materials such as metal foil and polyimide film that become the wiring of FPC. Moreover, the resin film shows excellent electrical properties in the high-frequency region of 1 to 10 GHz. Specifically, the resin film shows low dielectric constant (ε) and low dielectric tangent (tanδ) in the frequency range of 1 to 10 GHz.

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Document]

[專利文獻1] 日本專利特開2016-89137號公報 [Patent Document 1] Japanese Patent Application Publication No. 2016-89137

專利文獻1中記載之樹脂組成物,為了獲得於高頻區域之優異電特性,而使用於末端具有苯乙烯基之熱硬化性樹脂。 The resin composition described in Patent Document 1 uses a thermosetting resin having a styrene group at the terminal in order to obtain excellent electrical characteristics in a high-frequency region.

另一方面,基於低熱膨脹係數(CTE)之觀點,已知於熱硬化性樹脂中調配玻璃布或填料。 On the other hand, from the viewpoint of low thermal expansion coefficient (CTE), it is known to mix glass cloth or filler with thermosetting resin.

使用玻璃布或填料時,熱硬化性樹脂對於銅箔之接著強度降低。因此,為了提高對銅箔之接著力,於專利文獻1中,提案於熱硬化性樹脂中添加硫醚系矽烷偶合劑。 When glass cloth or filler is used, the bonding strength of the thermosetting resin to the copper foil is reduced. Therefore, in order to improve the adhesion to copper foil, Patent Document 1 proposes adding a thioether-based silane coupling agent to a thermosetting resin.

然而,本申請人發現以下各點。亦即,末端苯乙烯基之熱硬化性樹脂為了硬化而必須於高溫加熱。再者,於熱硬化性樹脂中添加硫醚系矽烷偶合劑時,自由基 聚合反應溫度會進一步偏移至高溫側。 However, the applicant found the following points. That is, in order to harden the thermosetting resin with a terminal styrene group, it is necessary to heat it at a high temperature. Furthermore, when a thioether-based silane coupling agent is added to a thermosetting resin, free radicals The polymerization reaction temperature will further shift to the high temperature side.

後述之實施例中,作為硬化特性評價,係使用以示差掃描熱量測定(Differential scanning calorimetry:DSC)所得之發熱峰值。關於此,本申請人發現以下各點。亦即末端苯乙烯基之熱硬化性樹脂藉DSC所得之發熱峰值高如200℃左右。再者,於末端苯乙烯基之熱硬化性樹脂中添加硫醚系矽烷偶合劑時,DSC所得之發熱峰值進一步上升30℃以上。藉由該現象,可知未添加硫醚系矽烷偶合劑時之硬化條件(例如200℃、60分鐘)時,熱硬化性樹脂未充分硬化,而有無法獲得本來特性之可能性。 In the examples described below, the heat generation peak obtained by differential scanning calorimetry (DSC) was used as the evaluation of the hardening characteristics. Regarding this, the applicant found the following points. That is to say, the heat peak value obtained by DSC for thermosetting resins with terminal styrene groups is as high as about 200°C. Furthermore, when a thioether-based silane coupling agent is added to the thermosetting resin with a terminal styrene group, the heat generation peak obtained by DSC further increases by more than 30°C. From this phenomenon, it can be seen that under the curing conditions (for example, 200° C., 60 minutes) when no thioether-based silane coupling agent is added, the thermosetting resin is not sufficiently cured and the original characteristics may not be obtained.

本揭示之一目的係提供以下之薄膜、以及該薄膜之製造中使用之熱硬化性樹脂組成物。該薄膜對於成為印刷基板之配線的金屬箔及基板材料具有優異之接著強度。再者,該薄膜於高頻區域顯示優異電特性。具體而言,該薄膜於頻率1~100GHz之區域顯示低介電率(ε)及低介電正切(tanδ)。進而,該薄膜具有更優異硬化性。 An object of this disclosure is to provide the following film and a thermosetting resin composition used in the production of the film. This film has excellent adhesion strength to metal foil and substrate materials used as wiring on printed circuit boards. Furthermore, the film exhibits excellent electrical properties in the high-frequency region. Specifically, the film shows low dielectric constant (ε) and low dielectric tangent (tanδ) in the frequency range of 1 to 100 GHz. Furthermore, this film has more excellent curability.

為達成上述目的,本揭示之一態樣係提供一種熱硬化性樹脂組成物(本熱硬化性樹脂組成物),其特徵係含有(A)於末端具有苯乙烯基之熱硬化性樹脂,(B)苯乙烯系熱塑性彈性體,(C)硫醚系矽烷偶合劑,及 (D)二烷基過氧化物系自由基聚合起始劑。 In order to achieve the above object, one aspect of the present disclosure provides a thermosetting resin composition (this thermosetting resin composition), which is characterized by containing (A) a thermosetting resin having a styrene group at the end, ( B) Styrene-based thermoplastic elastomer, (C) thioether-based silane coupling agent, and (D) Dialkyl peroxide-based radical polymerization initiator.

本熱硬化性樹脂組成物中,較好前述成分(A)之熱硬化性樹脂係於末端具有苯乙烯基並且具有伸苯醚骨架之熱硬化性樹脂。 In the present thermosetting resin composition, it is preferable that the thermosetting resin of the component (A) is a thermosetting resin having a styrene group at the terminal and a phenylene ether skeleton.

本熱硬化性樹脂組成物中,較好前述成分(A)之熱硬化性樹脂之數平均分子量(Mn)為1000~5000。 In this thermosetting resin composition, it is preferable that the number average molecular weight (Mn) of the thermosetting resin of the component (A) is 1,000 to 5,000.

本熱硬化性樹脂組成物中,較好前述成分(B)之苯乙烯系熱塑性彈性體係經氫化。 In this thermosetting resin composition, it is preferable that the styrenic thermoplastic elastomer system of the component (B) is hydrogenated.

本熱硬化性樹脂組成物中,較好前述成分(C)硫醚系矽烷偶合劑係聚硫醚系矽烷偶合劑。 In this thermosetting resin composition, the aforementioned component (C) is preferably a thioether-based silane coupling agent or a polythioether-based silane coupling agent.

本熱硬化性樹脂組成物較好進而含有(E)氧化矽填料。 The thermosetting resin composition preferably further contains (E) a silica filler.

本熱硬化性樹脂組成物中,較好前述(E)成分之氧化矽填料係以矽烷偶合劑予以表面處理者。 In the present thermosetting resin composition, it is preferred that the silica filler of component (E) is surface-treated with a silane coupling agent.

又,作為本揭示之其他態樣,係提供一種薄膜(本薄膜),其包含本熱硬化性樹脂組成物。 Moreover, as another aspect of this disclosure, a film (this film) containing this thermosetting resin composition is provided.

又,作為本揭示之其他態樣,係提供一種本熱硬化性樹脂組成物的硬化物及本薄膜之硬化物。 Moreover, as another aspect of this disclosure, a cured product of this thermosetting resin composition and a cured product of this film are provided.

又,作為本揭示之其他態樣,係提供一種包含本熱硬化性樹脂組成物的硬化物之多層配線板及包含本薄膜的硬化物之多層配線板。 Furthermore, as another aspect of the present disclosure, a multilayer wiring board including a cured product of the present thermosetting resin composition and a multilayer wiring board including a cured product of the present film are provided.

本熱硬化性樹脂組成物即使使用硫醚系矽烷 偶合劑,亦可藉與不使用時相同之條件,充分硬化。 This thermosetting resin composition uses thioether silane The coupling agent can also be fully hardened under the same conditions as when not in use.

本薄膜對於成為印刷基板之配線的金屬薄及基板材料具有優異接著強度。再者,本薄膜於高頻區域顯示優異電特性。具體而言,本薄膜於頻率1~100GHz之區域顯示低介電率(ε)及低介電正切(tanδ)。因此,本薄膜適用於電氣.電子用途之接著薄膜及印刷配線板之覆蓋薄膜。又,本薄膜適用於半導體裝置之基板間之層間接著。本薄膜尤其較好適合作為極高頻波基板用之接著薄膜。且,本薄膜亦可使用作為FPC本身。 This film has excellent adhesion strength to metal sheets and substrate materials used as wiring on printed circuit boards. Furthermore, this film exhibits excellent electrical properties in the high-frequency region. Specifically, this film shows low dielectric constant (ε) and low dielectric tangent (tanδ) in the frequency range of 1~100GHz. Therefore, this film is suitable for electrical applications. Adhesive film for electronic applications and covering film for printed wiring boards. Furthermore, this film is suitable for interlayer connection between substrates of semiconductor devices. This film is particularly suitable as an adhesive film for extremely high frequency wave substrates. Furthermore, this film can also be used as the FPC itself.

以下詳細說明本揭示之熱硬化性樹脂組成物之一實施形態。 One embodiment of the thermosetting resin composition of the present disclosure will be described in detail below.

本實施形態之熱硬化性樹脂組成物含有以下所示之成分(A)~成分(D)。 The thermosetting resin composition of this embodiment contains the following components (A) to (D).

(A)於末端具有苯乙烯基之熱硬化性樹脂 (A) Thermosetting resin having a styrene group at the end

成分(A)之於末端具有苯乙烯基之熱硬化性樹脂(以下,本說明書中記載為「成分(A)之熱硬化性樹脂」)較好為於末端具有苯乙烯基並且具有伸苯醚骨架之熱硬化性樹脂。 The thermosetting resin having a styrene group at the terminal of the component (A) (hereinafter, described as "the thermosetting resin of the component (A)" in this specification) preferably has a styrene group at the terminal and has a phenylene ether. Thermosetting resin for the frame.

於末端具有苯乙烯基並且具有伸苯醚骨架之熱硬化性樹脂較好為以下述通式(1)表示之化合物。 The thermosetting resin having a styrene group at the terminal and a phenylene ether skeleton is preferably a compound represented by the following general formula (1).

Figure 108118316-A0305-02-0008-1
Figure 108118316-A0305-02-0008-1

式(1)中,-(O-X-O)-係以下述通式(2)或(3)表示。 In formula (1), -(O-X-O)- is represented by the following general formula (2) or (3).

Figure 108118316-A0305-02-0008-2
Figure 108118316-A0305-02-0008-2

Figure 108118316-A0305-02-0008-3
Figure 108118316-A0305-02-0008-3

式(2)中,R1、R2、R3、R7及R8為碳數6以下之烷基或苯基,可互為相同亦可相異。R4、R5及R6為氫原子或碳數6以下之烷基或苯基,可互為相同亦可相異。 In formula (2), R 1 , R 2 , R 3 , R 7 and R 8 are an alkyl group or phenyl group having 6 or less carbon atoms, and may be the same or different from each other. R 4 , R 5 and R 6 are a hydrogen atom, an alkyl group having 6 or less carbon atoms, or a phenyl group, and may be the same or different from each other.

式(3)中,R9、R10、R11、R12、R13、R14、R15及R16為氫原子或碳數6以下之烷基或苯基,且可互為相同亦可相異。-A-為碳數20以下之直鏈狀、分支狀或環狀之2價烴基。 In formula (3), R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 and R 16 are hydrogen atoms, alkyl groups with 6 or less carbon atoms or phenyl groups, and may be the same as each other. Can be different. -A- is a linear, branched or cyclic divalent hydrocarbon group having 20 or less carbon atoms.

式(1)中,-(Y-O)-係以通式(4)表示。-(Y-O)-之1種構造或2種以上之構造係無規排列。 In formula (1), -(Y-O)- is represented by general formula (4). One structure or two or more structures of -(Y-O)- are randomly arranged.

Figure 108118316-A0305-02-0009-4
Figure 108118316-A0305-02-0009-4

式(4)中,R17及R18為碳數6以下之烷基或苯基,且可互為相同亦可相異。R19及R20為氫原子或碳數6以下之烷基或苯基,且可互為相同亦可相異。 In formula (4), R 17 and R 18 are an alkyl group or phenyl group having 6 or less carbon atoms, and may be the same or different from each other. R 19 and R 20 are a hydrogen atom, an alkyl group having 6 or less carbon atoms, or a phenyl group, and may be the same or different from each other.

式(1)中,a及b為0~100之整數。a與b中至少一者不為0。 In formula (1), a and b are integers from 0 to 100. At least one of a and b is not 0.

式(3)中作為-A-可舉例例如亞甲基、亞乙基、1-甲基亞乙基、1,1-亞丙基、1,4-伸苯基雙(1-甲基亞乙基)、1,3-伸苯基雙(1-甲基亞乙基)、亞環己基、苯基亞甲基、萘基亞甲基及1-苯基亞乙基等之2價有機基。惟,式(3)中之-A-並不限定於此等基。 Examples of -A- in formula (3) include methylene, ethylene, 1-methylethylene, 1,1-propylene, and 1,4-phenylenebis(1-methylethylene). Ethyl), 1,3-phenylenebis(1-methylethylene), cyclohexylene, phenylmethylene, naphthylmethylene and 1-phenylethylene, etc. divalent organic base. However, -A- in formula (3) is not limited to these bases.

作為以式(1)表示之化合物,較佳者係R1、R2、R3、R7、R8、R17及R18為碳數3以下之烷基,R4、R5、R6、R9、R10、R11、R12、R13、R14、R15、R16、R19及R20為氫原子或碳數3以下之烷基。尤其更佳係以通式(2)或通式(3)表示之-(O-X-O)-為通式(5)、通式(6)或通式(7)表示之化合物,及以通式(4)表示之-(Y-O)-係以式(8)或式(9)表示之化合物,或者以式(8)表示之化合物與以式(9)表示之化合物無規排列之構造。 As the compound represented by formula (1), it is preferable that R 1 , R 2 , R 3 , R 7 , R 8 , R 17 and R 18 are alkyl groups having 3 or less carbon atoms, and R 4 , R 5 and R 6. R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , R 19 and R 20 are hydrogen atoms or alkyl groups with less than 3 carbon atoms. Particularly more preferably, -(OXO)- represented by the general formula (2) or the general formula (3) is a compound represented by the general formula (5), the general formula (6) or the general formula (7), and the compound represented by the general formula ( 4) The -(YO)- represented is a compound represented by formula (8) or formula (9), or a structure in which a compound represented by formula (8) and a compound represented by formula (9) are randomly arranged.

Figure 108118316-A0305-02-0010-5
Figure 108118316-A0305-02-0010-5

Figure 108118316-A0305-02-0010-6
Figure 108118316-A0305-02-0010-6

Figure 108118316-A0305-02-0010-7
Figure 108118316-A0305-02-0010-7

Figure 108118316-A0305-02-0010-8
Figure 108118316-A0305-02-0010-8

Figure 108118316-A0305-02-0010-9
Figure 108118316-A0305-02-0010-9

以式(1)表示之化合物的製造方法並無特別限定。例如藉由2官能苯酚化合物與1官能苯酚化合物經氧化偶合所得之2官能苯醚寡聚物之末端苯酚性羥基經乙烯基芐基醚化,可製造以式(1)表示之化合物。 The method of producing the compound represented by formula (1) is not particularly limited. For example, the compound represented by formula (1) can be produced by etherifying the terminal phenolic hydroxyl group of a bifunctional phenylene ether oligomer obtained by oxidative coupling of a bifunctional phenol compound and a monofunctional phenol compound with a vinyl benzyl group.

成分(A)之熱硬化性樹脂的數平均分子量,藉由GPC法之以聚苯乙烯換算,較佳落於1000~5000之範圍,更佳落於1000~3000之範圍,又更佳落於1000~2500之範圍。若數平均分量為1000以上,則本實施形態之樹脂組成物被製成塗膜狀時難以產生發黏。且,若數平均分子量為5000以下,則可抑制本實施形態之樹脂組成物對溶劑之溶解性降低。又,藉由使用數平均分子量落於上述範圍內之成分(A)之熱硬化性樹脂,可提高本實施形態之樹脂組成物之高頻下之電特性及硬化性。 The number average molecular weight of the thermosetting resin of component (A) is preferably in the range of 1000 to 5000, more preferably in the range of 1000 to 3000, and more preferably in the range of 1000 to 3000 when converted to polystyrene by the GPC method. The range is 1000~2500. If the number average component is 1000 or more, the resin composition of this embodiment will be less likely to become sticky when it is formed into a coating film. Moreover, when the number average molecular weight is 5,000 or less, the solubility of the resin composition of this embodiment in a solvent can be suppressed from decreasing. Furthermore, by using the thermosetting resin of component (A) whose number average molecular weight falls within the above range, the electrical characteristics and curability at high frequencies of the resin composition of this embodiment can be improved.

(B)苯乙烯系熱塑性彈性體 (B) Styrenic thermoplastic elastomer

成分(B)之苯乙烯系熱塑性彈性體係指含有苯乙烯、其同系物或其類似物之熱塑性彈性體。 The styrenic thermoplastic elastomer system of component (B) refers to a thermoplastic elastomer containing styrene, its homologues or its analogues.

分子中存在不飽和鍵時,導致介電正切(tanδ)之增大。因此,作為成分(B)之苯乙烯系熱塑性彈性體較好使用經氫化者。藉由使用經氫化之苯乙烯系熱塑性彈性體,與使用未氫化者之情況比較,可獲得更低之介電正切(tanδ)。 The presence of unsaturated bonds in the molecule leads to an increase in the dielectric tangent (tanδ). Therefore, it is preferable to use a hydrogenated styrenic thermoplastic elastomer as component (B). By using a hydrogenated styrenic thermoplastic elastomer, a lower dielectric tangent (tanδ) can be obtained compared to the case of using an unhydrogenated one.

作為成分(B),可舉例例如苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯嵌段共聚物(SBBS)、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-乙烯-丙烯嵌段共聚物(SEP)、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚 物(SEEPS)以及該等共聚物之氫化物。此處例示之化合物可單獨使用,亦可混合2種以上使用。 Examples of the component (B) include styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block copolymer (SBS), styrene-butadiene -Butylene-styrene block copolymer (SBBS), styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene block copolymer (SEP), styrene-ethylene -Propylene-styrene block copolymer (SEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer (SEEPS) and the hydrogenated products of these copolymers. The compounds exemplified here may be used alone, or two or more types may be mixed and used.

成分(A)與成分(B)之質量比較好為成分(A):成分(B)=10:90~90:10,更好為20:80~80:20,又更好為20:80~50:50。 The quality ratio of component (A) and component (B) is preferably component (A): component (B) = 10:90~90:10, preferably 20:80~80:20, and even more preferably 20:80 ~50:50.

若成分(B)過多,則相對地成分(A)減少,使本實施形態之熱硬化性樹脂組成物之硬化性變差,難以獲得剝離強度等之特性。相反地,若成分(A)過多,則相對地成分(B)減少,使包含本實施形態之熱硬化性樹脂組成物之薄膜及其硬化物變硬且脆,損及薄膜性。因此,有發生龜裂,剝離強度等之作為硬化物之特性降低之虞。 If the component (B) is too much, the component (A) will be relatively reduced, resulting in poor curability of the thermosetting resin composition of the present embodiment, making it difficult to obtain properties such as peel strength. On the contrary, if the component (A) is too much, the component (B) will be relatively reduced, making the film containing the thermosetting resin composition of the present embodiment and its cured product hard and brittle, thereby impairing the film properties. Therefore, there is a risk that cracks may occur and the properties of the hardened material, such as peel strength, may be reduced.

(C)硫醚系矽烷偶合劑 (C)Thioether silane coupling agent

本實施形態之熱硬化性樹脂組成物中,藉由含有硫醚系矽烷偶合劑作為成分(C),可維持包含該熱硬化性樹脂組成物之薄膜於高頻下之電特性,同時提高與作為印刷配線板之配線而廣泛使用之銅箔的接著強度。其結果,可減低熱硬化性樹脂組成物於接著後剝落的風險。 In the thermosetting resin composition of this embodiment, by containing a thioether-based silane coupling agent as the component (C), the electrical characteristics of a film containing the thermosetting resin composition can be maintained at high frequencies while improving the electrical characteristics of the film. The bonding strength of copper foil, which is widely used for wiring on printed wiring boards. As a result, the risk of the thermosetting resin composition peeling off after bonding can be reduced.

硫醚系矽烷偶合劑較好為具有2個以上硫醚鍵之聚硫醚系矽烷偶合劑。 The thioether-based silane coupling agent is preferably a polythioether-based silane coupling agent having two or more thioether bonds.

作為聚硫醚系矽烷偶合劑舉例為例如雙(三甲氧基矽烷基丙基)四硫醚、雙(三乙氧基矽烷基丙基)四硫醚、雙(三丁氧基矽烷基丙基)四硫醚、雙(二甲氧基甲基矽烷基丙基)四硫醚、雙(二乙氧基甲基矽烷基丙基)四硫醚、雙(二 丁氧基甲基矽烷基丙基)四硫醚、雙(三甲氧基矽烷基丙基)二硫醚、雙(三乙氧基矽烷基丙基)二硫醚、雙(三丁氧基矽烷基丙基)二硫醚、雙(二甲氧基甲基矽烷基丙基)二硫醚、雙(二乙氧基甲基矽烷基丙基)二硫醚及雙(二丁氧基甲基矽烷基丙基)二硫醚等。 Examples of the polythioether silane coupling agent include bis(trimethoxysilylpropyl)tetrasulfide, bis(triethoxysilylpropyl)tetrasulfide, and bis(tributoxysilylpropyl) )tetrasulfide, bis(dimethoxymethylsilylpropyl)tetrasulfide, bis(diethoxymethylsilylpropyl)tetrasulfide, bis(di Butoxymethylsilylpropyl)tetrasulfide, bis(trimethoxysilylpropyl)disulfide, bis(triethoxysilylpropyl)disulfide, bis(tributoxysilane) propyl) disulfide, bis(dimethoxymethylsilylpropyl)disulfide, bis(diethoxymethylsilylpropyl)disulfide and bis(dibutoxymethyl) Silylpropyl) disulfide, etc.

聚硫醚系矽烷偶合劑中之硫醚鍵數,基於密著性之觀點,較好為2、3或4,特佳為4。 The number of thioether bonds in the polythioether silane coupling agent is preferably 2, 3 or 4 from the viewpoint of adhesion, and particularly preferably 4.

聚硫醚系矽烷偶合劑,基於安定性之觀點,鍵結於Si之烷氧基較好為甲氧基或乙氧基,更好為乙氧基。 Polysulfide is a silane coupling agent. From the viewpoint of stability, the alkoxy group bonded to Si is preferably a methoxy group or an ethoxy group, and more preferably an ethoxy group.

成分(C)之硫醚系矽烷偶合劑,相對於成分(A)及成分(B)之合計100質量份,較好含0.1~5.0質量份,更好含0.1~3.0質量份,又更好含0.1~2.0質量份。 The thioether silane coupling agent of component (C) preferably contains 0.1 to 5.0 parts by mass, more preferably 0.1 to 3.0 parts by mass, based on 100 parts by mass of the total of component (A) and component (B). Contains 0.1~2.0 parts by mass.

(D)二烷基過氧化物系自由基聚合起始劑 (D) Dialkyl peroxide radical polymerization initiator

本實施形態之熱硬化性樹脂組成物中,藉由調配二烷基過氧化物系自由基聚合起始劑作為成分(D),儘管含有作為成分(A)之於末端具有苯乙烯基之熱硬化性樹脂,並且含有作為成分(C)之硫醚系矽烷偶合劑,仍可抑制自由基聚合反應溫度偏移至高溫側。作為自由基聚合起始劑,亦存在有二醯基過氧化物、過氧化氫及酮過氧化物等。然而,該等自由基聚合起始劑難以抑制自由基聚合反應溫度偏移至高溫側。 In the thermosetting resin composition of this embodiment, by blending a dialkyl peroxide-based radical polymerization initiator as the component (D), the thermosetting resin composition having a styrene group at the terminal as the component (A) is contained. It is a curable resin and contains a thioether-based silane coupling agent as component (C), which can still suppress the radical polymerization reaction temperature from shifting to the high temperature side. As radical polymerization initiators, diyl peroxides, hydrogen peroxides, ketone peroxides, etc. also exist. However, it is difficult for these radical polymerization initiators to suppress the radical polymerization reaction temperature from shifting to the high temperature side.

作為成分(D)之二烷基過氧化物系自由基聚合起始 劑,較好使用於常溫為固體者。所謂於常溫為固體者,由於不易揮發,故處理性優異。 Dialkyl peroxide-based radical polymerization starter as component (D) The agent is preferably used when it is solid at room temperature. Those that are solid at room temperature are not easily volatile and therefore have excellent handling properties.

成分(D)之二烷基過氧化物系自由基聚合起始劑,基於保存安定性之觀點,較好為二枯基過氧化物(日油股份有限公司製,品名:PERCUMYL D)。 The dialkyl peroxide of component (D) is a radical polymerization initiator. From the viewpoint of storage stability, dicumyl peroxide (manufactured by NOF Co., Ltd., brand name: PERCUMYL D) is preferred.

成分(D)之二烷基過氧化物系自由基聚合起始劑,相對於成分(A)及成分(B)之合計100質量份,較好含0.1~5.0質量份,更好含0.1~3.0質量份,又更好含0.1~2.0質量份。 The dialkyl peroxide of component (D) is a radical polymerization initiator. It is preferably 0.1 to 5.0 parts by mass, more preferably 0.1 to 5.0 parts by mass relative to 100 parts by mass of the total of component (A) and component (B). 3.0 parts by mass, preferably 0.1~2.0 parts by mass.

本揭示之熱硬化性樹脂組成物,除上述成分(A)~成分(D)以外,亦可根據需要含有以下所述之成分。 The thermosetting resin composition of the present disclosure may, in addition to the above-mentioned components (A) to (D), also contain the following components as necessary.

(E)氧化矽填料 (E)Silicon oxide filler

含有氧化矽填料作為成分(E)時,可減低包含本揭示之熱硬化性樹脂組成物之薄膜之熱膨脹係數(CTE)。 When a silica filler is included as component (E), the coefficient of thermal expansion (CTE) of a film containing the thermosetting resin composition of the present disclosure can be reduced.

成分(E)之氧化矽填料以矽烷偶合劑予以表面處理時,由於可提高耐濕信賴性(介電率、介電正切之變化率較小)故而較佳。 When the silica oxide filler of component (E) is surface-treated with a silane coupling agent, it is preferable because the moisture resistance reliability can be improved (the change rate of dielectric constant and dielectric tangent is small).

表面處理所用之矽烷偶合劑較好為以下述通式(10)表示之矽烷偶合劑。 The silane coupling agent used for surface treatment is preferably represented by the following general formula (10).

Figure 108118316-A0305-02-0014-10
Figure 108118316-A0305-02-0014-10

上述式中,R1~R3分別獨立為碳數1~3之烷基,R4為至少於末端具有不飽和雙鍵之官能基,n為3~9。基於提高剝離強度之觀點,通式(10)中之R4較好為乙烯基、(甲基)丙烯醯基及(甲基)丙烯醯氧基之任一者。通式(10)中,n為5~9時,由於熱硬化性樹脂組成物之硬化物對於外力之應力獲得緩和,故獲得優異之焊接耐熱性。尤其R4為乙烯基時,獲得極優異之焊接耐熱性。 In the above formula, R 1 to R 3 are each independently an alkyl group having 1 to 3 carbon atoms, R 4 is a functional group having at least an unsaturated double bond at the end, and n is 3 to 9. From the viewpoint of improving the peel strength, R 4 in the general formula (10) is preferably any one of a vinyl group, a (meth)acrylyl group and a (meth)acryloxy group. In the general formula (10), when n is 5 to 9, excellent welding heat resistance is obtained because the stress of the hardened product of the thermosetting resin composition is relaxed against external forces. Especially when R 4 is vinyl, extremely excellent welding heat resistance is obtained.

基於提高剝離強度之觀點,通式(10)中之R4較好為乙烯基。又,基於低熱膨脹性之觀點,通式(10)中,n較好為3或4。 From the viewpoint of improving the peel strength, R 4 in the general formula (10) is preferably vinyl. In addition, in the general formula (10), n is preferably 3 or 4 from the viewpoint of low thermal expansion.

作為以通式(10)表示之矽烷偶合劑舉例為辛烯基三烷氧基矽烷及(甲基)丙烯醯氧基烷基三烷氧基矽烷。作為辛烯基三烷氧基矽烷舉例為辛烯基三甲氧基矽烷及辛烯基三乙氧基矽烷等。作為(甲基)丙烯醯氧基烷基三烷氧基矽烷舉例為(甲基)丙烯醯氧基辛基三甲氧基矽烷及(甲基)丙烯醯氧基辛基三乙氧基矽烷等。基於提高剝離強度之觀點,更好使用辛烯基三甲氧基矽烷。作為以通式(10)表示之矽烷偶合劑之市售品舉例為信越化學製辛烯基三甲氧基矽烷(品名:KBM-1083)及信越化學製甲基丙烯醯氧基辛基三甲氧基矽烷(品名:KBM-5803)。 Examples of the silane coupling agent represented by the general formula (10) include octenyltrialkoxysilane and (meth)acryloxyalkyltrialkoxysilane. Examples of octenyltrialkoxysilane include octenyltrimethoxysilane, octenyltriethoxysilane, and the like. Examples of (meth)acryloxyalkyltrialkoxysilane include (meth)acryloxyoctyltrimethoxysilane and (meth)acryloxyoctyltriethoxysilane. From the viewpoint of improving peel strength, octenyltrimethoxysilane is preferably used. Examples of commercially available silane coupling agents represented by general formula (10) include octenyltrimethoxysilane (product name: KBM-1083) manufactured by Shin-Etsu Chemical Co., Ltd. and methacryloxyoctyltrimethoxysilane manufactured by Shin-Etsu Chemical Co., Ltd. Silane (product name: KBM-5803).

又,作為上述以外之矽烷偶合劑,舉例為3-甲基丙烯醯氧基丙基三甲氧基矽烷等。作為矽烷偶合劑之市售品舉例為信越化學製3-甲基丙烯醯氧基丙基三甲氧基矽烷(品名:KBM-503)。 Examples of silane coupling agents other than the above include 3-methacryloxypropyltrimethoxysilane. An example of a commercially available silane coupling agent is 3-methacryloxypropyltrimethoxysilane (product name: KBM-503) manufactured by Shin-Etsu Chemical Co., Ltd.

表面處理所用之矽烷偶合劑可為單獨亦可為兩種以上。 The silane coupling agent used for surface treatment may be alone or in combination of two or more.

作為成分(E)之氧化矽填料舉例為熔融氧化矽、普通矽石、球狀氧化矽、破碎氧化矽、結晶氧化矽及非晶質氧化矽等,並未特別限制。基於氧化矽填料之分散性、熱硬化性樹脂組成物之流動性、硬化物之表面平滑性、介電特性、低熱膨脹性及接著性等之觀點,氧化矽填料期望為球狀之熔融氧化矽。且氧化矽填料之平均粒徑(不為球狀時,為其平均最大徑)並未特別限制。但,若考慮比表面積較小時,硬化後之耐濕性提高,則氧化矽填料之平均粒徑較好為0.05~20μm,更好為0.1~15μm,又更好為0.5~10μm。此處,氧化矽填料之平均粒徑意指藉由雷射散射繞射式粒度分佈測定裝置測定之體積基準之中值徑。作為成分(E)使用之氧化矽填料可為單獨亦可為兩種以上。 Examples of the silica filler as component (E) include fused silica, ordinary silica, spherical silica, crushed silica, crystalline silica and amorphous silica, and are not particularly limited. From the viewpoints of the dispersibility of the silica filler, the fluidity of the thermosetting resin composition, the surface smoothness of the cured product, dielectric properties, low thermal expansion and adhesiveness, etc., the silica filler is preferably spherical molten silica. . The average particle size of the silica filler (when it is not spherical, its average maximum diameter) is not particularly limited. However, considering that the moisture resistance after hardening is improved when the specific surface area is small, the average particle size of the silica filler is preferably 0.05 to 20 μm, more preferably 0.1 to 15 μm, and still more preferably 0.5 to 10 μm. Here, the average particle diameter of the silica filler means the volume-based median diameter measured by a laser scattering diffraction particle size distribution measuring device. The silica filler used as component (E) may be used singly or in combination of two or more.

使用矽烷偶合劑對氧化矽填料進行表面處理之方法並未特別限制,舉例為乾式法及濕式法等。 The method of surface treatment of the silica filler using a silane coupling agent is not particularly limited, and examples include dry method and wet method.

乾式法係將氧化矽填料與對於氧化矽填料之表面積為適當量之矽烷偶合劑裝入攪拌裝置中,以適當條件攪拌。或者預先將氧化矽填料裝至攪拌裝置中,邊以適當條件攪拌邊將對於氧化矽填料之表面積為適當量之矽烷偶合劑以原液或溶液藉由滴下或噴霧等而添加。藉由攪拌,於氧化矽填料表面均一附著矽烷偶合劑,實施(藉由水解)表面處理。作為攪拌裝置舉例為例如亨歇爾混合機 等之可藉高速旋轉而攪拌.混合之混合機。但,攪拌裝置並未特別限制。 In the dry method, the silica filler and an appropriate amount of silane coupling agent for the surface area of the silica filler are put into a stirring device and stirred under appropriate conditions. Alternatively, the silica filler is loaded into a stirring device in advance, and an appropriate amount of the silane coupling agent for the surface area of the silica filler is added by dripping or spraying as a stock solution or solution while stirring under appropriate conditions. By stirring, the silane coupling agent is uniformly attached to the surface of the silica filler, and surface treatment (by hydrolysis) is performed. An example of a stirring device is a Henschel mixer. It can be stirred by high-speed rotation. Mixer for mixing. However, the stirring device is not particularly limited.

濕式法係對欲表面處理之氧化矽填料之表面積為充分量之矽烷偶合劑藉由水或有機溶劑溶解,作成表面處理溶液。於該表面處理溶液中添加氧化矽填料,藉由攪拌成為漿料狀,而使矽烷偶合劑與氧化矽填料充分反應。隨後,使用過濾及/或離心分離等,將氧化矽填料自表面處理溶液分離,並加熱乾燥,進行表面處理。 In the wet method, a sufficient amount of silane coupling agent is dissolved in water or an organic solvent to prepare a surface treatment solution for the surface area of the silica filler to be surface treated. A silica filler is added to the surface treatment solution and stirred into a slurry to fully react between the silane coupling agent and the silica filler. Subsequently, the silica filler is separated from the surface treatment solution using filtration and/or centrifugal separation, and is heated and dried to perform surface treatment.

含有氧化矽填料作為成分(E)時,氧化矽填料相對於成分(A)及成分(B)之合計100質量份,較好含50~600質量份,更好含100~500質量份,又更好含200~400質量份。該等範圍於進行氧化矽填料之表面處理時,為包含表面處理劑(例如矽烷偶合劑)在內之質量範圍。 When a silicon oxide filler is contained as the component (E), the silicon oxide filler is preferably contained in an amount of 50 to 600 parts by mass, more preferably 100 to 500 parts by mass, based on 100 parts by mass of the total of the component (A) and the component (B). It is better to contain 200~400 parts by mass. These ranges are the mass range including surface treatment agents (such as silane coupling agents) when performing surface treatment of silica fillers.

本實施形態之熱硬化性樹脂組成物亦可根據需要含有除上述成分(A)~成分(E)以外之成分。作為此等成分之具體例舉例為環氧樹脂、環氧樹脂之硬化劑、其他熱硬化性樹脂、其他熱硬化性樹脂之硬化劑、熱塑性樹脂、抗氧化劑、消泡劑、調平劑、搖變劑、難燃劑、藍化防止劑、黏連防止劑及分散劑等。各成分(調配劑)之種類及調配量如常用方法。 The thermosetting resin composition of this embodiment may contain components other than the above-mentioned components (A) to (E) as necessary. Specific examples of these components include epoxy resin, hardeners for epoxy resins, other thermosetting resins, hardeners for other thermosetting resins, thermoplastic resins, antioxidants, defoaming agents, leveling agents, shakers, etc. Modifying agents, flame retardants, blue-inhibiting agents, adhesion preventing agents and dispersants, etc. The types and amounts of each ingredient (preparation agent) are as commonly used.

(熱硬化性樹脂組成物之調製) (Preparation of thermosetting resin composition)

本實施形態之熱硬化性樹脂組成物可藉由慣用方法製造。 The thermosetting resin composition of this embodiment can be produced by a conventional method.

例如於溶劑存在下,將上述成分(A)~成分(D)(於熱硬化性樹脂組成物含有上述成分(E)及/或其他任意成分時,進而包含該等任意成分)藉由加熱攪拌混合機溶解及混合。或者,亦可將上述成分(A)~成分(D)以成為期望含有比例之方式,分別溶解於特定溶劑中,將該等(於熱硬化性樹脂組成物含有上述成分(E)及/或其他任意成分時,進而包含該等任意成分)以特定量投入攪拌混合機中,混合及攪拌。含有成分(E)等之填料時,期望進而使用分散裝置。 For example, in the presence of a solvent, the above-mentioned component (A) ~ component (D) (when the thermosetting resin composition contains the above-mentioned component (E) and/or other arbitrary components, further including these arbitrary components) are stirred by heating Mixer dissolves and mixes. Alternatively, the above-mentioned components (A) to (D) may be dissolved in a specific solvent respectively in a desired content ratio, and these (in a thermosetting resin composition containing the above-mentioned component (E) and/or In the case of other optional ingredients, further including these optional ingredients) are put into the mixer in a specific amount, mixed and stirred. When a filler such as component (E) is contained, it is desirable to use a dispersing device.

本實施形態之熱硬化性樹脂組成物具有以下所示之較佳特性。 The thermosetting resin composition of this embodiment has the following preferable characteristics.

本實施形態之熱硬化性樹脂組成物,其熱硬化物於高頻下之電特性優異。具體而言,熱硬化性樹脂組成物之熱硬化物於頻率1~100GHz之區域之介電率(ε)較好為3.5以下,更好為3.3以下。且於頻率1~100GHz之區域之介電正切(tanδ)較好為0.004以下,更好為0.003以下。 The thermosetting resin composition of this embodiment has excellent electrical properties at high frequencies as a thermosetting product. Specifically, the dielectric constant (ε) of the thermosetting product of the thermosetting resin composition in the frequency range of 1 to 100 GHz is preferably 3.5 or less, more preferably 3.3 or less. Furthermore, the dielectric tangent (tanδ) in the frequency range of 1 to 100 GHz is preferably 0.004 or less, more preferably 0.003 or less.

藉由使於頻率1~100GHz之區域之介電率(ε)及介電正切(tanδ)為上述範圍,可減低高頻區域之電信號損失。 By setting the dielectric constant (ε) and dielectric tangent (tanδ) in the frequency range from 1 to 100 GHz to the above ranges, the electrical signal loss in the high-frequency range can be reduced.

又,本實施形態之熱硬化性樹脂組成物,其熱硬化物於高頻下之電特性之耐濕信賴性優異。具體而言,藉後述實施例記載之順序於85℃/85%RH之條件下放置1000小時後之於頻率1~100GHz之區域之介電率(ε)的變化率較好為5%以下,更好為3%以下。又,於頻率1~100GHz之區域之介電正切的變化率(tanδ)較好為120%以下, 更好為80%下,又更好為60%以下。 Furthermore, the thermosetting resin composition according to this embodiment has excellent electrical characteristics and moisture resistance reliability at high frequencies. Specifically, the change rate of the dielectric constant (ε) in the frequency range of 1 to 100 GHz after being left for 1000 hours under the conditions of 85°C/85%RH according to the procedure described in the examples below is preferably 5% or less. It is better to be less than 3%. In addition, the change rate (tanδ) of the dielectric tangent in the frequency range of 1 to 100 GHz is preferably 120% or less, The best is below 80%, and the better is below 60%.

又,本實施形態之熱硬化性樹脂組成物,其熱硬化物具有充分之接著強度。具體而言,熱硬化性樹脂組成物之熱硬化物依據JIS K6854-2測定之對於銅箔(光澤面及粗化面)之剝離強度(180度剝離)較好為4N/cm以上,更好為6N/cm以上。 Furthermore, in the thermosetting resin composition of this embodiment, the thermosetting product has sufficient adhesive strength. Specifically, the peeling strength (180 degree peeling) of the thermosetting product of the thermosetting resin composition to copper foil (glossy surface and roughened surface) measured in accordance with JIS K6854-2 is preferably 4 N/cm or more, more preferably It is above 6N/cm.

本實施形態之熱硬化性樹脂組成物以示差掃描熱量計(DSC)測定時之發熱峰值為190℃以下,低於(A)成分單獨之DSC發熱峰值之200℃。因此,本實施形態之熱硬化性樹脂組成物於與未添加(C)成分時同樣之特定硬化條件200℃×60分鐘下可充分硬化。 The heat-generating peak of the thermosetting resin composition of this embodiment when measured with a differential scanning calorimeter (DSC) is 190°C or less, which is lower than the 200°C DSC heat-generating peak of component (A) alone. Therefore, the thermosetting resin composition of this embodiment can be fully cured under the same specific curing conditions of 200° C. × 60 minutes as when component (C) is not added.

包含本實施形態之熱硬化性樹脂組成物之薄膜(以下,於本說明書中,記載為「本實施形態之薄膜」)可藉由習知方法獲得。例如,將本實施形態之熱硬化性樹脂組成物以溶劑稀釋為適當黏度,獲得塗佈液。將該塗佈液塗佈於支撐體之至少一面上並乾燥。藉此,本實施形態之薄膜可提供作為附支撐體之薄膜或自支撐體剝離後之薄膜。 The film containing the thermosetting resin composition of this embodiment (hereinafter, described as "the film of this embodiment" in this specification) can be obtained by a conventional method. For example, the thermosetting resin composition of this embodiment is diluted with a solvent to an appropriate viscosity to obtain a coating liquid. The coating liquid is applied to at least one side of the support and dried. Thereby, the film of this embodiment can be provided as a film with a support or as a film peeled off from the support.

作為塗佈液可使用之溶劑舉例為甲基乙基酮及甲基異丁基酮等之酮類;甲苯及二甲苯等之芳香族溶劑;以及環己酮、二甲基甲醯胺及1-甲基-2-吡咯啶酮等之高沸點溶劑等。溶劑之使用量並未特別限制,只要為可將塗佈液調整為最適黏度之量即可。溶劑使用量較好相對於固形分為20~70質量%。 Examples of solvents that can be used as the coating liquid include ketones such as methyl ethyl ketone and methyl isobutyl ketone; aromatic solvents such as toluene and xylene; and cyclohexanone, dimethylformamide and 1 -High boiling point solvents such as methyl-2-pyrrolidone, etc. The amount of solvent used is not particularly limited as long as the coating liquid can be adjusted to an optimal viscosity. The preferred amount of solvent used is 20 to 70% by mass relative to the solid content.

支撐體可根據薄膜之製造方法及用途適當選擇,並未特別限制。作為支撐體,舉例為例如銅及鋁等之金屬箔、由聚醯亞胺、液晶聚合物及PTFE等之樹脂所成之基材,及聚酯及聚乙烯等之樹脂之載體薄膜等。 The support can be appropriately selected according to the manufacturing method and purpose of the film, and is not particularly limited. Examples of the support include metal foils such as copper and aluminum, base materials made of resins such as polyimide, liquid crystal polymer, and PTFE, and carrier films of resins such as polyester and polyethylene.

塗佈液塗佈之方法並未特別限制。作為該塗佈方法,舉例為例如狹縫模嘴方式、凹版方式及刮刀塗佈器方式等。塗佈方法可根據期望之薄膜厚度等適當選擇。 The method of applying the coating liquid is not particularly limited. Examples of the coating method include a slot die method, a gravure method, a blade coater method, and the like. The coating method can be appropriately selected depending on the desired film thickness and the like.

本實施形態之薄膜厚度係基於根據用途所要求之基板厚度、零件厚度及機械強度等之特性適當設計。本實施形態之薄膜厚度一般為10~200μm。 The film thickness in this embodiment is appropriately designed based on characteristics such as substrate thickness, component thickness, and mechanical strength required for the application. The film thickness of this embodiment is generally 10~200 μm.

乾燥條件係對應於塗佈液中使用之溶劑種類及量、塗佈液之塗佈厚度及乾燥裝置之差異等而適當設定,並未特別限制。例如,乾燥可於60~150℃之溫度於大氣壓下進行。 The drying conditions are appropriately set according to the type and amount of the solvent used in the coating liquid, the coating thickness of the coating liquid, the difference in drying equipment, etc., and are not particularly limited. For example, drying can be performed at a temperature of 60 to 150°C and under atmospheric pressure.

本實施形態之薄膜使用作為電氣.電子用途之接著薄膜時,其使用順序如以下。 The film of this embodiment is used as an electrical appliance. When bonding films for electronic applications, the usage sequence is as follows.

於欲使用本實施形態之薄膜接著之對象物中之一對象物之被接著面上載置本實施形態之薄膜。隨後,將另一對象物以其被接著面與薄膜之露出面接觸之方式載置。此處,使用附支撐體之薄膜時,以薄膜之露出面與另一對象物之被接著面接觸之方式載置薄膜。接著,於被接著面上暫時壓著該薄膜。此處,暫時壓著時之溫度可設為例如130℃。暫時壓著時,藉由剝離支撐體使薄膜露出。 The film of this embodiment is placed on the bonded surface of one of the objects to be bonded using the film of this embodiment. Then, another object is placed so that its adhered surface is in contact with the exposed surface of the film. Here, when using a film with a support, the film is placed so that the exposed surface of the film contacts the adhered surface of another object. Then, the film is temporarily pressed on the surface to be bonded. Here, the temperature during temporary pressing can be set to 130°C, for example. During temporary pressing, the film is exposed by peeling off the support.

其次,於露出之薄膜(絕緣薄膜)之面上,將另一對象 物以其被接著面與薄膜之露出面接觸之方式載置。實施該等順序後,以特定溫度及特定時間實施熱壓著,隨後,實施加熱硬化。 Next, place another object on the surface of the exposed film (insulating film) The object is placed in such a manner that the bonded surface is in contact with the exposed surface of the film. After these procedures are carried out, heat pressing is performed at a specific temperature and for a specific time, and then heat hardening is performed.

熱壓著時之溫度較好為100~160℃。熱壓著時間較好為0.5~3分鐘。 The temperature during hot pressing is preferably 100~160℃. The best hot pressing time is 0.5 to 3 minutes.

加熱硬化之溫度較好為160~240℃,更好為180~220℃。加熱硬化之時間較好為30~120分鐘。 The temperature for heat hardening is preferably 160~240°C, more preferably 180~220°C. The preferred heating and hardening time is 30 to 120 minutes.

又,暫時壓著步驟及熱壓著步驟亦可省略。 In addition, the temporary pressing step and the hot pressing step may be omitted.

又,亦可替代預先薄膜化者,而實施以下順序。亦即,以溶劑稀釋為適當黏度之本實施形態之熱硬化性樹脂組成物塗佈於一接著對象物之被接著面並乾燥。隨後,於經乾燥之熱硬化性樹脂組成物上,載置上述另一對象物。 In addition, instead of thinning in advance, the following procedure may be performed. That is, the thermosetting resin composition of this embodiment diluted with a solvent to an appropriate viscosity is applied to the bonded surface of an object to be bonded and dried. Then, the other object is placed on the dried thermosetting resin composition.

本實施形態之薄膜使用作為覆蓋薄膜時,其使用順序如以下。 When the film of this embodiment is used as a cover film, the usage sequence is as follows.

將本實施形態之薄膜配置於在主面形成有配線圖型之附配線樹脂基板之特定位置,亦即形成有配線圖型之側的經覆蓋薄膜覆蓋之位置。隨後,以特定溫度及特定時間實施暫時壓著、熱壓著及加熱硬化。又,暫時壓著步驟及熱壓著步驟亦可省略。 The film of this embodiment is disposed at a specific position of the wiring-attached resin substrate on which the wiring pattern is formed on the main surface, that is, at a position covered by the cover film on the side where the wiring pattern is formed. Subsequently, temporary pressing, hot pressing and heat hardening are carried out at a specific temperature and for a specific time. In addition, the temporary pressing step and the hot pressing step may be omitted.

暫時壓著、熱壓著及加熱硬化之溫度及時間與使用上述作為電氣.電子用途之接著薄膜時相同。 The temperature and time of temporary pressing, hot pressing and heat hardening are related to the use of the above as electrical. The same applies to films used in electronic applications.

本實施形態之熱硬化性樹脂組成物及本實施形態之薄膜之硬化物,因其優異之高頻下電特性,而可使用於包含在主面形成有配線圖型之附配線樹脂基板的軟性 配線板。 The thermosetting resin composition of this embodiment and the cured product of the film of this embodiment can be used in flexible resin substrates including wiring patterns formed on the main surface due to their excellent high-frequency electrical characteristics. Distribution board.

該附配線樹脂基板包含聚醯亞胺薄膜及液晶聚合物薄膜等之樹脂基板及形成於該樹脂基板之主面上之配線圖型。上述軟性配線板係於該附配線樹脂基板之配線圖型側藉由上述順序接著本實施形態之薄膜並硬化者。 The wiring-attached resin substrate includes a resin substrate such as a polyimide film and a liquid crystal polymer film, and a wiring pattern formed on the main surface of the resin substrate. The above-mentioned flexible wiring board is one in which the film of this embodiment is adhered to the wiring pattern side of the wiring-attached resin substrate through the above-mentioned procedures and cured.

又,本實施形態之軟性配線板可如以下般形成。於上述附配線樹脂基板之配線圖型側,塗佈以溶劑稀釋為具有適當黏度之本實施形態之熱硬化性樹脂組成物。隨後,於該配線圖型上,形成由樹脂組成物之硬化物所成之層。 Moreover, the flexible wiring board of this embodiment can be formed as follows. The thermosetting resin composition of this embodiment diluted with a solvent to have an appropriate viscosity is applied to the wiring pattern side of the above-mentioned resin substrate with wiring. Then, a layer made of a cured resin composition is formed on the wiring pattern.

本實施形態之薄膜亦可使用於半導體裝置之基板間之層間接著。該情況下,上述欲接著之對象物成為構成半導體裝置之相互積層之複數基板。又,半導體裝置之基板間之層間接著中,亦可替代使用預先薄膜化者,而使用以溶劑稀釋為具有適當黏度之本實施形態之熱硬化性樹脂組成物。 The thin film of this embodiment can also be used for interlayer connection between substrates of a semiconductor device. In this case, the object to be bonded becomes a plurality of mutually laminated substrates constituting the semiconductor device. Furthermore, in the interlayer connection between substrates of a semiconductor device, the thermosetting resin composition of this embodiment diluted with a solvent to have an appropriate viscosity may be used instead of using one that has been thinned in advance.

本實施形態之多層配線板包含本實施形態之熱硬化性樹脂組成物之硬化物或本實施形態之薄膜之硬化物。本實施形態之多層配線板可藉由將本實施形態之熱硬化性樹脂組成物或本實施形態之薄膜硬化而製作。該多層配線板由於包含本實施形態之熱硬化性樹脂組成物之硬化物或本實施形態之薄膜之硬化物,故耐熱性、耐濕信賴性及耐吸濕回流性優異。作為多層配線板,舉例為微波及極高頻波通訊用之基板,尤其是車載用極高頻波雷達基板等之高頻用途之印刷配線板等。多層配線板之製造方法並未 特別限制。作為多層配線板之製造方法,可使用與使用一般預浸片製作印刷配線板之情況相同之方法。 The multilayer wiring board of this embodiment contains a cured product of the thermosetting resin composition of this embodiment or a cured product of the film of this embodiment. The multilayer wiring board of this embodiment can be produced by curing the thermosetting resin composition of this embodiment or the film of this embodiment. Since this multilayer wiring board contains the cured product of the thermosetting resin composition of this embodiment or the cured product of the film of this embodiment, it has excellent heat resistance, moisture resistance reliability, and moisture absorption reflow resistance. Examples of multilayer wiring boards include substrates for microwave and ultra-high-frequency wave communications, especially printed wiring boards for high-frequency applications such as ultra-high-frequency wave radar substrates for vehicles. The manufacturing method of multilayer wiring board has not Special restrictions. As a manufacturing method of a multilayer wiring board, the same method as when manufacturing a printed wiring board using a general prepreg sheet can be used.

[實施例] [Example]

以下藉由實施例詳細說明本實施形態。但,本實施形態並不限定於此等。 This embodiment will be described in detail below through examples. However, this embodiment is not limited to this.

(實施例1~9、比較例1~4) (Examples 1 to 9, Comparative Examples 1 to 4) 樣品製作及測定方法 Sample preparation and measurement methods

以成為下表所示之調配比例(質量份)之方式計量各成分。隨後,於已先投入特定量甲苯之加熱攪拌機中,投入成分(A)及成分(B)。邊加溫至70℃,邊使攪拌翼以旋轉數35rpm旋轉,邊於常壓進行溶解混合2小時。隨後,冷卻至常溫後,將其他成分投入加熱攪拌機中,邊使攪拌翼以旋轉數60rpm旋轉,邊進行攪拌混合1小時。隨後,以具有適於塗佈之黏度之方式,進一步添加特定量之甲苯並攪拌,稀釋樹脂組成物。隨後,將樹脂組成物以濕式微粒化裝置(Nanomizer MN2-2000AR,吉田機械興業股份有限公司製)分散。 Each component was measured so that the mixing ratio (parts by mass) would be as shown in the table below. Subsequently, component (A) and component (B) were added to a heating mixer in which a specific amount of toluene had been previously added. While heating to 70° C. and rotating the stirring blade at 35 rpm, the mixture was dissolved and mixed at normal pressure for 2 hours. Subsequently, after cooling to normal temperature, the other components were put into a heating mixer and stirred and mixed for 1 hour while rotating the stirring blade at 60 rpm. Subsequently, a specific amount of toluene is further added and stirred to dilute the resin composition in such a manner that it has a viscosity suitable for coating. Subsequently, the resin composition was dispersed using a wet micronization device (Nanomizer MN2-2000AR, manufactured by Yoshida Machinery Co., Ltd.).

將包含如此獲得之樹脂組成物的塗佈液,塗佈於支撐體(經實施脫模處理之PET薄膜)之單面上,於100℃乾燥。藉此,獲得附支撐體之薄膜(厚度100μm)。 The coating liquid containing the resin composition obtained in this way was applied to one side of the support (PET film subjected to release treatment) and dried at 100°C. Thereby, a thin film (thickness: 100 μm) with a support was obtained.

又,表中之代號分別表示如下。 In addition, the codes in the table are expressed as follows.

成分(A) Ingredient(A)

(A1):OPE-2St 2200(品名,三菱瓦斯化學股份有限公司製)、寡苯醚(以上述通式(1)表示之改質聚苯醚(式(1)中之-(O-X-O)-為通式(5),式(1)中之-(Y-O)-為式(8))(Mn=2200) (A1): OPE-2St 2200 (brand name, manufactured by Mitsubishi Gas Chemical Co., Ltd.), oligophenylene ether (modified polyphenylene ether represented by the above general formula (1) (-(O-X-O)- in the formula (1)) is the general formula (5), and -(Y-O)- in the formula (1) is the formula (8)) (Mn=2200)

成分(B) Ingredient(B)

(B1):苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS),G1652(品名,CLAYTON POLYMER JAPAN股份有限公司製) (B1): Styrene-ethylene-butylene-styrene block copolymer (SEBS), G1652 (product name, manufactured by CLAYTON POLYMER JAPAN Co., Ltd.)

成分(C) Ingredients(C)

(C1):雙(三乙氧基矽烷基丙基)四硫醚,KBE846(品名,信越化學股份有限公司製) (C1): Bis(triethoxysilylpropyl)tetrasulfide, KBE846 (product name, manufactured by Shin-Etsu Chemical Co., Ltd.)

成分(D) Ingredients(D)

(D1):二枯基過氧化物,PERCUMYL D(品名,日油股份有限公司製) (D1): Dicumyl peroxide, PERCUMYL D (brand name, manufactured by NOF Co., Ltd.)

(D’1):過氧苯甲酸第三丁酯,PERBUTYL Z(品名,日油股份有限公司製) (D’1): tert-butyl peroxybenzoate, PERBUTYL Z (brand name, manufactured by NOF Co., Ltd.)

成分(E) Ingredients(E)

(E1):未處理球狀氧化矽,FB-3SDX(品名,DENKA股份有限公司製,平均粒徑3.4μm) (E1): Untreated spherical silica, FB-3SDX (product name, manufactured by DENKA Co., Ltd., average particle size 3.4 μm)

(E2):以7-辛烯基三甲氧基矽烷(品名:KBM-1083,信越化學股份有限公司製矽烷偶合劑)表面處理過之FB-3SDX (E2): FB-3SDX surface-treated with 7-octenyltrimethoxysilane (product name: KBM-1083, silane coupling agent manufactured by Shin-Etsu Chemical Co., Ltd.)

(E3):以8-甲基丙烯醯氧基辛烯基三甲氧基矽烷(品名:KBM-5803,信越化學股份有限公司製矽烷偶合劑)表面處理過之FB-3SDX (E3): FB-3SDX surface-treated with 8-methacrylyloxyoctenyltrimethoxysilane (product name: KBM-5803, silane coupling agent manufactured by Shin-Etsu Chemical Co., Ltd.)

(E4):以3-甲基丙烯醯氧基丙基三甲氧基矽烷(品名:KBM-503,信越化學股份有限公司製矽烷偶合劑)表面處理過之FB-3SDX (E4): FB-3SDX surface-treated with 3-methacryloxypropyltrimethoxysilane (product name: KBM-503, silane coupling agent manufactured by Shin-Etsu Chemical Co., Ltd.)

又,(E2)~(E4)之表面處理係以上述段落[0045]中記載之乾式法進行。此時,所添加之矽烷偶合劑之量,係自矽烷偶合劑每1g之最小被覆面積(m2/g)及氧化矽填料之比表面積(m2/g),基於以下計算式算出,計算氧化矽填料表面被覆一層之量而決定。 In addition, the surface treatment of (E2) to (E4) is performed by the dry method described in the above paragraph [0045]. At this time, the amount of silane coupling agent added is calculated from the minimum coverage area per 1g of silane coupling agent (m 2 /g) and the specific surface area of silica filler (m 2 /g), based on the following calculation formula, calculated Determined by the amount of coating on the surface of the silica filler.

矽烷偶合劑添加量(g)=(氧化矽填料之質量(g)×比表面積(m2/g))/矽烷偶合劑之最小被覆面積(m2/g) Silane coupling agent addition amount (g) = (mass of silica filler (g) × specific surface area (m 2 /g))/minimum coverage area of silane coupling agent (m 2 /g)

DSC峰值溫度:以示差掃描熱量計(DSC,NETZSCH DSC204 F1 Phoenix),將試驗片設定於測定器。基於由特定溫度流程(以5℃/min自25℃升溫至300℃)所得之DSC曲線,讀取發熱峰值。將峰頂溫度設為DSC峰值溫度。 DSC peak temperature: Set the test piece to the measuring device using a differential scanning calorimeter (DSC, NETZSCH DSC204 F1 Phoenix). Based on the DSC curve obtained from a specific temperature process (heating from 25°C to 300°C at 5°C/min), the heat peak value is read. Set the peak temperature to the DSC peak temperature.

介電率(ε)、介電正切(tanδ):使薄膜於200℃加熱硬化60分鐘,自支撐體剝離。隨後,自該薄膜切下試驗片(50±1mm×70±12mm),測定此試驗片厚度,以介電體 共振器法(SPDR法)(10GHz),測定試驗片之介電率(ε)及介電正切(tanδ)。 Dielectric permittivity (ε), dielectric tangent (tanδ): The film was heated and hardened at 200° C. for 60 minutes, and then peeled off from the support. Then, a test piece (50±1mm×70±12mm) was cut out from the film, and the thickness of the test piece was measured. The resonator method (SPDR method) (10GHz) measures the dielectric constant (ε) and dielectric tangent (tanδ) of the test piece.

耐濕信賴性:將上述試驗片於85℃/85%RH之條件下,放置1000小時。隨後,以與上述相同順序,測定試驗片之介電率(ε)及介電正切(tanδ)。 Moisture resistance reliability: Place the above test piece under the conditions of 85℃/85%RH for 1000 hours. Subsequently, in the same procedure as above, the dielectric constant (ε) and dielectric tangent (tanδ) of the test piece were measured.

剝離強度:於薄膜兩面上貼合銅箔(CF-T9FZSV,福田金屬箔粉工業股份有限公司製,厚度18μm),以加壓機加壓硬化(200℃,60分鐘,10kgf)。該試驗片以10mm寬度切出,以Autograph剝下。依據JIS K 6854-2,測定試驗片之剝離強度(180度剝離)。關於剝離強度,係測定於內側貼合銅箔光澤面之情況的剝離強度與貼合粗化面時之剝離強度。 Peel strength: Laminate copper foil (CF-T9FZSV, manufactured by Fukuda Metal Foil Industry Co., Ltd., thickness 18 μm) on both sides of the film, and press and harden with a press (200°C, 60 minutes, 10kgf). The test piece was cut out with a width of 10 mm and peeled off using Autograph. In accordance with JIS K 6854-2, the peel strength of the test piece (180-degree peel) was measured. The peel strength was measured when the glossy surface of the copper foil was bonded to the inside and the peel strength when the roughened surface was bonded.

Figure 108118316-A0305-02-0026-11
Figure 108118316-A0305-02-0026-11

Figure 108118316-A0305-02-0027-12
Figure 108118316-A0305-02-0027-12

實施例1~9關於介電特性(介電率(ε)、介電正切(tanδ))(初期值)及對於銅箔之剝離強度之任一者均優異。且,DSC峰值溫度均為190℃以下。再者,實施例1及實施例7~9之耐濕性賴性亦優異。 Examples 1 to 9 were all excellent in both dielectric properties (dielectric constant (ε), dielectric tangent (tanδ)) (initial value) and peeling strength to copper foil. Moreover, the DSC peak temperatures are all below 190°C. Furthermore, Example 1 and Examples 7 to 9 were also excellent in moisture resistance.

又,實施例2係相對於實施例1,成分(A1)及(B1)之調配比例改變之例。實施例3~5係相對於實施例2,成分(C1)之調配比例改變之例。實施例6係相對於實施例1,成分(A1)、(B1)及(D1)之調配比例改變之例。實施例7~9係相對於實施例1,成分(E2)分別改變為成分(E3)、(E4)或(E1)之例。與使用未處理之氧化矽填料(E1)之實施例9相比,使用以矽烷偶合劑表面處理之氧化矽填料(E2)、(E3)及(E4)之實施例1、7、8之耐濕性賴性更提高。 In addition, Example 2 is an example in which the mixing ratio of components (A1) and (B1) is changed compared to Example 1. Examples 3 to 5 are examples in which the proportion of component (C1) is changed compared to Example 2. Example 6 is an example in which the proportions of components (A1), (B1) and (D1) are changed compared to Example 1. Examples 7 to 9 are examples in which the component (E2) is changed into the component (E3), (E4), or (E1), respectively, relative to Example 1. Compared with Example 9 using untreated silica oxide filler (E1), the resistance of Examples 1, 7 and 8 using silica oxide filler (E2), (E3) and (E4) surface-treated with silane coupling agent. Moisture dependence is further improved.

比較例1及2中,替代二烷基過氧化物系自由基聚合起 始劑之成分(D1),而使用烷基過氧化物系自由基聚合起始劑之成分(D’1)。比較例1及2中,DSC峰值溫度為230℃以上。 In Comparative Examples 1 and 2, instead of dialkyl peroxide-based radical polymerization The component (D1) of the initiator is used, and the component (D'1) of the alkyl peroxide-based radical polymerization initiator is used. In Comparative Examples 1 and 2, the DSC peak temperature was 230°C or higher.

未使用成分(C1)之比較例3,DSC峰值溫度為190℃以下。但,有對於銅箔之剝離強度低的傾向,對於光澤面之剝離強度為4N/cm以下,特別低。 In Comparative Example 3 without using component (C1), the DSC peak temperature was 190°C or lower. However, the peel strength with respect to copper foil tends to be low, and the peel strength with respect to the glossy surface is 4 N/cm or less, which is particularly low.

未使用成分(C1)而使用(D1)(二枯基過氧化物)之比較例4,DSC峰值溫度為190℃以下。但,有對於銅箔之剝離強度低的傾向,對於光澤面之剝離強度為4N/cm以下,特別低。 Comparative Example 4 in which component (C1) was not used but (D1) (dicumyl peroxide) was used, the DSC peak temperature was 190°C or lower. However, the peel strength with respect to copper foil tends to be low, and the peel strength with respect to the glossy surface is 4 N/cm or less, which is particularly low.

Claims (11)

一種熱硬化性樹脂組成物,其特徵係含有(A)於末端具有苯乙烯基並且具有伸苯醚骨架之熱硬化性樹脂,(B)苯乙烯系熱塑性彈性體,(C)硫醚系矽烷偶合劑,及(D)二烷基過氧化物系自由基聚合起始劑;並且該熱硬化性樹脂組成物不包含磷-氮系阻燃劑以及居里溫度為-50℃以下的第2族~第6族的金屬氧化物及第2族~第6族之金屬氧化物的鹽;相對於前述(A)於末端具有苯乙烯基並且具有伸苯醚骨架之熱硬化性樹脂及前述(B)苯乙烯系熱塑性彈性體之合計100質量份,前述(C)硫醚系矽烷偶合劑的含量為0.1~5.0質量份,相對於前述(A)於末端具有苯乙烯基並且具有伸苯醚骨架之熱硬化性樹脂及前述(B)苯乙烯系熱塑性彈性體之合計100質量份,前述(D)二烷基過氧化物系自由基聚合起始劑的含量為0.1~5.0質量份。 A thermosetting resin composition characterized by containing (A) a thermosetting resin having a styrene group at the end and a phenylene ether skeleton, (B) a styrene-based thermoplastic elastomer, and (C) a thioether-based silane Coupling agent, and (D) dialkyl peroxide radical polymerization initiator; and the thermosetting resin composition does not contain a phosphorus-nitrogen flame retardant and a second flame retardant with a Curie temperature of -50°C or less. Metal oxides from Groups 2 to 6 and salts of metal oxides from Groups 2 to 6; with respect to the aforementioned (A), a thermosetting resin having a styrene group at the end and a phenylene ether skeleton and the aforementioned (A) B) A total of 100 parts by mass of the styrene-based thermoplastic elastomer, the content of the aforementioned (C) thioether-based silane coupling agent is 0.1 to 5.0 parts by mass, and the content of the aforementioned (A) has a styrene group at the end and a phenylene glycol The total amount of the thermosetting resin of the skeleton and the aforementioned (B) styrenic thermoplastic elastomer is 100 parts by mass, and the content of the aforementioned (D) dialkyl peroxide-based radical polymerization initiator is 0.1 to 5.0 parts by mass. 如請求項1之熱硬化性樹脂組成物,其中前述成分(A)之熱硬化性樹脂之數平均分子量(Mn)為1000~5000。 The thermosetting resin composition of claim 1, wherein the thermosetting resin of the component (A) has a number average molecular weight (Mn) of 1,000 to 5,000. 如請求項1或2之熱硬化性樹脂組成物,其中前述成分 (B)之苯乙烯系熱塑性彈性體係經氫化。 The thermosetting resin composition of claim 1 or 2, wherein the aforementioned components The styrenic thermoplastic elastomer system of (B) is hydrogenated. 如請求項1或2之熱硬化性樹脂組成物,其中前述成分(C)硫醚系矽烷偶合劑係聚硫醚系矽烷偶合劑。 The thermosetting resin composition of claim 1 or 2, wherein the aforementioned component (C) thioether-based silane coupling agent is a polythioether-based silane coupling agent. 如請求項1或2之熱硬化性樹脂組成物,其進而含有(E)氧化矽填料。 The thermosetting resin composition of claim 1 or 2 further contains (E) silica filler. 如請求項5之熱硬化性樹脂組成物,其中前述(E)成分之氧化矽填料係以矽烷偶合劑予以表面處理者。 The thermosetting resin composition of claim 5, wherein the silica filler of component (E) is surface-treated with a silane coupling agent. 一種樹脂薄膜,其包含如請求項1至6中任一項之熱硬化性樹脂組成物。 A resin film containing the thermosetting resin composition according to any one of claims 1 to 6. 一種如請求項1至6中任一項之熱硬化性樹脂組成物的硬化物。 A cured product of the thermosetting resin composition according to any one of claims 1 to 6. 一種如請求項7之樹脂薄膜的硬化物。 A cured product of the resin film according to claim 7. 一種多層配線板,其包含如請求項8之熱硬化性樹脂組成物的硬化物。 A multilayer wiring board containing a cured product of the thermosetting resin composition according to claim 8. 一種多層配線板,其包含如請求項9之樹脂薄膜的硬化物。 A multilayer wiring board including a cured product of the resin film according to claim 9.
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