TWI817614B - Continuous plasma processing system with positioning electrode - Google Patents

Abstract

A continuous plasma processing system with positioning electrode includes a frame shape carrier plate for holding a to-be-processed object, a loading chamber for inputting the to-be-processed object, a processing chamber for carrying out a plasma process on the to-be-processed object, and an unloading chamber for outputting the finished object. The processing chamber includes a second electrode and a moving device. An anti-slip member is convexly disposed on the surface of the second electrode and encircles a cooling area. The moving device controls the second electrode to move between an electrically connected position and an electrically disconnected position. When the second electrode is at the electrically connected position, the to-be-processed object is positioned by the anti-slip member on the cooling area of the second electrode. Thus, the present invention prevents the displacement and inaccurate position of the to-be-processed object.

Description

Continuous plasma process system with positioning electrodes

The present invention relates to a technology related to plasma processing, and in particular, to a continuous plasma processing system with positioning electrodes.

Plasma processing is one of the widely used technologies in semiconductor manufacturing. Generally, plasma processing equipment adopts a single-cavity blade arrangement or a multi-cavity series-connected continuous (In-line) plasma processing equipment. Among them, Continuous (In-line) plasma processing equipment needs to carry the objects to be processed through carrier trays for transportation in different cavities. However, during the transportation process and the plasma process, the objects to be processed are prone to displacement. situation.

The movement of the object to be processed will lead to inaccurate positioning of the object to be processed in the continuous process, and inaccurate positioning may affect the accuracy of plasma processes such as cleaning, etching or coating; in addition, In addition, as the continuous process progresses, the positioning situation will become more serious in the later processes, which will have a serious impact on the process yield.

The main purpose of the present invention is to solve the problem of positioning between the electrode and the object to be processed, and to avoid inaccurate positioning of the object to be processed.

In order to achieve the above object, the present invention provides a continuous plasma process system with positioning electrodes, which includes: a frame-shaped carrier plate, a loading cavity, a processing cavity and a load-out cavity. The frame-shaped carrier plate is used for To carry an object to be processed; the loading cavity is used to input the object to be processed; the processing cavity is connected to the loading cavity, the processing cavity receives the object to be processed and performs plasma treatment on the object to be processed, and the processing cavity has a first An electrode, a second electrode and a displacement device. The first electrode and the second electrode are arranged oppositely at both ends of the processing chamber and form a processing space. The displacement device is connected to the second electrode, and an anti-slip member is protruding from the surface of the second electrode. , the anti-slip member surrounds the surface of the second electrode to form a cooling area. After the frame-shaped carrier plate moves to the processing space, the displacement device can control the second electrode to be in a power-off position or a conductive position. When the second electrode is in the conductive position At this time, the object to be processed is positioned on the cooling area of the second electrode by contacting the anti-slip part; the load-out cavity is connected to the processing chamber, and the load-out cavity receives and outputs the processed object to be processed.

Thereby, the continuous plasma process system with positioning electrodes of the present invention can increase the friction force on the surface of the second electrode through the anti-slip piece protruding from the surface of the second electrode. When the displacement device controls the movement of the second electrode to the conductive position, through The contact between the anti-slip parts and the object to be processed positions the object to be processed in the cooling zone to prevent the object to be processed from being displaced and to ensure that the object to be processed is in the subsequent plasma process or is loaded on the frame carrier. The positioning accuracy is high, thereby avoiding the problem of poor process yield. Furthermore, by defining a cooling zone through the arrangement of the anti-slip parts, the object to be processed can be effectively cooled and the object to be processed can be avoided from overheating caused by the high temperature generated by the plasma process.

In order to facilitate the explanation of the central idea of the present invention expressed in the above summary column, specific embodiments are hereby expressed. Various objects in the embodiments are drawn according to proportions, sizes, deformations or displacements suitable for illustration, rather than according to the proportions of actual components, and are explained first.

Referring to FIGS. 1 to 9B , the present invention provides a continuous plasma processing system 100 with positioning electrodes, which includes a frame-shaped carrier 10 , a loading cavity 20 , a processing cavity 30 , and a load-out Cavity 40 and a transmission device 50; in this embodiment, the loading cavity 20, the processing cavity 30 and the loading cavity 40 are arranged in sequence, and the loading cavity 20, the processing cavity 30 and the loading cavity The bodies 40 are connected with each other, and the transmission device 50 is continuously provided in the loading cavity 20 , the processing cavity 30 and the loading cavity 40 .

The frame-shaped carrier tray 10 is used to carry an object to be processed 1, and the loading cavity 20 is used to input the object to be processed 1. The processing chamber 30 can receive the object to be processed 1 and perform plasma treatment on the object to be processed 1, and the loading cavity 20 is used to input the object to be processed 1. The body 40 can receive and output the processed object 1, and the frame-shaped carrier plate 10 can be placed on the transmission device 50, and is dragged to the loading cavity 20, the processing cavity 30 and unloaded by the transmission device 50. The cavity 40 undergoes a horizontal displacement.

The processing cavity 30 has a first electrode 31, a second electrode 32 and a displacement device 33. As shown in FIG. 2, the first electrode 31 and the second electrode 32 are arranged oppositely at both ends of the processing cavity 30 and form a A processing space S, the displacement device 33 is connected to the second electrode 32, wherein the first electrode 31 and the second electrode 32 are oppositely arranged in the processing cavity 30 in a vertical direction.

In this embodiment, the first electrode 31 and the second electrode 32 are respectively coupled to a radio frequency power supply, and can respectively provide the first electrode 31 and the second electrode 32 with radio frequency energy to generate plasma, so as to perform plasma treatment on the object 1 to be processed. handle. Of course, one of the first electrode 31 and the second electrode 32 can be coupled to the power supply, and the other electrode can be connected to the ground. An electric field can also be formed in the processing chamber 30 to perform plasma processing.

In this embodiment, when the frame carrier 10 moves to the processing space S, the displacement device 33 can control the second electrode 32 to be in a power-off position P1 or a conductive position P2, as shown in Figures 2 and 3. When the second electrode 32 is far away from the first electrode 31 and not in contact with the object 1 to be processed, the second electrode 32 is located at the power-off position P1; as shown in Figures 2 and 4, when the second electrode 32 moves toward the first electrode 31 And when it passes through the frame-shaped carrier plate 10 and presses against the object to be processed 1 and leaves the frame-shaped carrier plate 10 , the second electrode 32 is located at the conductive position P2. It should be noted that in this application, the first electrode 31 and the second electrode 32 arranged in the vertical direction are used as an example. The second electrode 32 moves in the vertical direction through the frame-shaped carrier 10 to abut against the frame-shaped carrier 10 to be processed. Object 1.

In this embodiment, when the second electrode 32 is located at the power-off position P1, the radio frequency power supply is not activated to provide radio frequency energy to the first electrode 31 and the second electrode 32; when the second electrode 32 is located at the conductive position P2, the radio frequency power supply is not activated. The power is turned on to generate plasma between the first electrode 31 and the second electrode 32, so that the object 1 to be processed can be subjected to plasma treatment.

An anti-slip member 321 is protruding from the surface of the second electrode 32 and surrounds the surface of the second electrode 32 to form a cooling zone Z. As shown in FIG. 4 , when the second electrode 32 moves to the conductive position P2, the object 1 to be processed passes through The anti-slip member 321 is contacted and positioned on the cooling zone Z of the second electrode 32; in this embodiment, the anti-slip member 321 is made of silicone or rubber.

To further explain, the anti-slip member 321 can increase the friction on the surface of the second electrode 32, thereby preventing the object to be processed 1 from being displaced and misaligned during the contact process between the object to be processed 1 and the second electrode 32, and to avoid the subsequent displacement device 33 There is a problem of inaccurate positioning when the second electrode 32 is controlled to be at the power-off position P1 so that the frame-shaped carrier 10 receives the processed object 1 .

In this embodiment, the cooling zone Z provides an input of cooling gas to cool the object 1 to be processed. The second electrode 32 is provided with an air inlet 322, and the air inlet 322 is connected to the cooling zone Z. When the second electrode 32 is in a conductive position At P2, the air inlet hole 322 provides input of cooling gas to the cooling zone Z to cool the object 1 to be processed; in this embodiment, the cooling gas is helium.

In addition, in this embodiment, the vertical height of the anti-skid part 321 protruding from the surface of the second electrode 32 is between 0.5 mm and 2 mm. The vertical height range can ensure the positioning effect of the anti-skid part 321 and can reduce the input temperature. The gas is sufficiently distributed in the cooling zone Z without the problem that the cooling zone Z is too large and affects the cooling effect.

The anti-skid component 321 of the first embodiment of the present invention is shown in Figures 5 to 6. In this embodiment, the anti-skid component 321 is in the shape of a closed ring, and the second electrode 32 is provided with an outlet at a position different from that of the air inlet 322. The air hole 323 and the air outlet hole 323 are connected to the cooling zone Z. When the second electrode 32 is located at the conductive position P2, the cooling gas is input from the air inlet hole 322 and discharged from the air outlet hole 323 to ensure the stability of the cooling gas flow. The positions of the air inlet 322 and the air outlet 323 disclosed in Figures 5 and 6 of this case are only examples. In fact, the positions will be adjusted according to the design requirements to achieve the purpose of gas flow and cooling of the object 1 to be processed.

The anti-skid component 321 of the second embodiment of the present invention is shown in Figures 7 to 8. In this embodiment, the anti-skid component 321 is a plurality of anti-skid sections 3211 arranged at intervals, and an exhaust channel 3212 is formed between each anti-skid section 3211. Each exhaust channel 3212 is connected to the cooling zone Z. When the second electrode 32 is located at the conductive position P2, the cooling gas is input from the air inlet 322 and discharged from each exhaust channel 3212, thereby achieving gas flow and cooling the object 1 to be processed. the goal of.

A plurality of elastic conductive members 324 are protruding from the surface of the second electrode 32. The elastic conductive members 324 are located in the cooling zone Z. The elastic conductive members 324 have a contact surface. As shown in FIG. 4, when the second electrode 32 is located at the conductive position P2 , the object to be processed 1 is positioned on the cooling zone Z of the second electrode 32 by contacting the anti-slip member 321, and the elastic conductive member 324 simultaneously contacts the bottom of the object to be processed 1 with the contact surface and carries the object 1 to be processed.

When the elastic conductive member 324 presses against the object 1 to be processed, the contact surface can change the contact area with the object 1 according to the pressure it bears; in this embodiment, the elastic conductive member 324 is arched; in this embodiment In this example, the elastic conductive member 324 is beryllium copper.

In this embodiment, the area occupied by the elastic conductive member 324 covers 10% to 50% of the surface area of the second electrode 32 . It should be noted that the area occupied by the elastic conductive member 324 cannot be too large. This is because the elastic conductive member 324 needs to be pressed down so that the contact surface of the elastic conductive member 324 can change with the pressure it bears. The contact area with the object 1 to be processed can achieve the effect of surface contact. If the area occupied by the elastic conductive member 324 is too large, the pressure borne by the elastic conductive member 324 after sharing is not enough to change the area of the contact surface A. The effect of surface contact of the object 1 to be processed; on the other hand, if the area occupied by the elastic conductive member 324 is too small, the purpose of improving the process uniformity of the surface of the object 1 to be processed cannot be achieved. On the other hand, with the design that the vertical height of the anti-slip part 321 protruding from the surface of the second electrode 32 is between 0.5 mm and 2 mm, the weight of the object 1 to be processed can simultaneously pressurize the anti-skid part 321 and the elastic conductive part 324 The distance between the second electrode 32 and the object to be processed 1 is further reduced, and at the same time it has the advantages of high conductivity, high positioning, and closeness to the surface of the second electrode 32 .

The elastic conductive member 324 can contact the object to be processed 1 in a surface contact manner, thereby increasing the contact uniformity and electrical conductivity between the second electrode 32 and the object to be processed 1, thereby making the plasma action more uniform and More concentrated on the object to be processed 1.

The displacement device 33 has a driving member 331 and a moving member 332 linked to the driving member 331. The moving member 332 is moved by the driving member 331 and drives the second electrode 32 to move. The driving member 331 can drive the moving member 332 toward the first electrode. 31 direction, and the second electrode 32 passes through the frame-shaped carrier plate 10 to reach the conductive position P2; in this embodiment, the driving member 331 can be a pneumatic cylinder or a hydraulic cylinder.

For further explanation, please refer to Figures 3 and 4. In this embodiment, the processing chamber 30 has a platform 37, and the displacement device 33 has a connecting plate 334. The platform 37 is fixed and driven. The member 331 drives the displacement device 33 to move vertically upward by raising the connecting plate 334, so that the second electrode 32 passes through the frame-shaped carrier plate 10 and presses against the object 1 to be processed.

In this embodiment, the displacement device 33 further has an elastic grounding member 333. The elastic grounding member 333 is provided on the side of the moving member 332 connected to the second electrode 32 and corresponds to the position of the frame-shaped carrier 10, as shown in Figure 4 , when the second electrode 32 is located at the conductive position P2, the elastic grounding member 333 can simultaneously contact the bottom of the frame-shaped carrier 10; in this embodiment, the elastic grounding member 333 can be beryllium copper.

In this embodiment, when the second electrode 32 is located at the conductive position P2, there is a separation distance between the object 1 and the frame-shaped carrier 10; in this embodiment, the separation distance is 1 mm to 3 mm.

Among them, the moving member 332 actually provides a grounding path for the elastic grounding member 333. When the elastic grounding member 333 contacts the frame-shaped carrier 10, the frame-shaped carrier 10 can be connected to the grounding path and be in a grounded state. The grounding state of the carrier 10 can effectively limit the range of plasma to avoid the problem of plasma divergence, and avoid the problem of excessive impedance of the frame-shaped carrier 10 . In addition, when the object to be processed 1 is subjected to plasma treatment, since the object to be processed 1 is actually spaced apart from the frame-shaped carrier 10 , particles generated by the plasma can be avoided from forming between the frame-shaped carrier 10 and the frame-shaped carrier 10 Between the object 1 to be processed, the frame-shaped carrier 10 and the object 1 are electrically connected.

The processing cavity 30 has a horizontal adjustment module 34, a distance adjustment module 35 and a clamping device 36. The horizontal adjustment module 34 is provided between the driving part 331 and the moving part 332, and the distance adjustment module 35 is provided between the driving part 331 and the moving part 332. The clamping device 36 is fixed in the processing space S on both sides of the end of the moving member 332 away from the second electrode 32 .

The horizontal adjustment module 34 is used to adjust the level of the second electrode 32 to ensure the horizontal accuracy of the process machine. In this embodiment, one end of the moving member 332 is connected to the connecting plate 334 through the horizontal adjustment module 34, and the other end passes through After passing through the platform 37 and contacting the second electrode 32, the connecting plate 334 is moved by the driving member 331 and drives the moving member 332 and the second electrode 32 to move.

As shown in FIGS. 9a to 9b , the horizontal adjustment module 34 can change the vertical distance between the connecting plate 334 and the moving member 332 by adjusting its length, thereby correcting the horizontality of the second electrode 32; in this embodiment, , the horizontal adjustment module 34 is a screw and a nut.

In addition to the above-mentioned method of adjusting the vertical distance between the connecting plate 334 and the moving member 332 through the horizontal adjustment module 34, in other possible embodiments (not shown), the driving member 331 contacts the horizontal adjustment module 34 , one end of the moving member 332 is connected to the horizontal adjustment module 34, and the other end is in contact with the second electrode 32. The horizontal adjustment module 34 can change the vertical distance between the driving member 331 and the moving member 332 by adjusting its length, thereby correcting the second electrode. The levelness of the two electrodes 32.

The distance adjustment module 35 is used to limit the movement distance of the second electrode 32 toward the first electrode 31 in conjunction with frame-shaped carrier plates 10 of different sizes or objects to be processed 1 of different sizes; in this embodiment, the platform 37 is provided with a limiting portion 371, and the distance adjustment module 35 is provided on the connecting plate 334 and corresponds to the position of the limiting portion 371. As shown in Figure 4, when the displacement device 33 drives the second electrode 32 to move toward the first electrode 31 , the limiting part 371 can limit the moving distance of the displacement device 33 in the direction of the first electrode 31 by contacting the distance adjustment module 35, and the distance adjustment module 35 can adjust the size of the moving distance by adjusting its length. ; In this embodiment, the distance adjustment module 35 is a screw and a nut.

The clamping device 36 is used to fix the outer edge of the object to be processed 1 to prevent the object to be processed 1 from being heated and warped during the plasma treatment process. As shown in Figure 4, when the displacement device 33 controls the second electrode 32 to drive the object to be processed 1 moves in the direction of the first electrode 31 to separate from the frame carrier 10, and when the second electrode 32 is located at the conductive position P2, the second electrode 32 and the clamping device 36 are respectively clamped by two vertical sides of the object 1 to be processed. Fix the object to be processed 1. Thereby, the object 1 to be processed is prevented from bending and warping due to heat, thereby affecting the plasma treatment effect.

In this embodiment, after the plasma process is completed, the displacement device 33 controls the second electrode 32 to move in a direction away from the first electrode 31, so that the processed object 1 is carried on the frame-shaped carrier 10, and the second electrode 32 is moved away from the first electrode 31. The two electrodes 32 are located at the power-off position P1 and move toward the loading cavity 40 through the transmission device 50 .

Based on the above, the present invention can achieve the following effects:

1. The surface friction of the second electrode 32 is increased through the anti-slip member 321 protruding from the surface of the second electrode 32. When the second electrode 32 moves to the conductive position P2, the anti-slip member 321 contacts the object 1 to be processed. The object 1 to be processed is positioned in the cooling zone Z to avoid the position of the object 1 to be processed, and to ensure the positioning accuracy of the subsequent plasma process, thus avoiding the problem of poor process yield.

2. Through the exhaust channel 3212 opened between the air inlet hole 322, the air outlet hole 323 or the anti-slip section 3211 of the second electrode 32, when the second electrode 32 moves to the conductive position P2, the air inlet hole 322 can input The cooling gas is used to cool the object 1 to be processed, and the cooling gas is discharged from the air outlet 323 to ensure the stability of the flow of the cooling gas.

3. Through the plurality of elastic conductive members 324 protruding from the second electrode 32, the contact area between the contact surface A and the object to be processed 1 can be changed according to the pressure, thereby increasing the distance between the second electrode 32 and the object to be processed 1. The contact uniformity and conductive efficiency make the plasma action more uniform and more concentrated on the object to be processed 1.

4. The second electrode 32 is controlled by the displacement device 33 to lift the object 1 to be processed, so that there is a gap between the frame-shaped carrier 10 and the object 1, and at the same time, it contacts the elastic grounding member 333 to form a grounding path, and The frame-shaped carrier 10 is grounded to further concentrate the plasma cluster at the position of the object to be processed 1, thereby preventing the plasma from agglomerating at the position of the frame-shaped carrier 10 and reducing the contamination of the frame-shaped carrier 10 by particles generated by the plasma. possible, thus avoiding the problems of reduced process efficiency, machine damage, and poor process yield.

5. By utilizing the arrangement of the frame-shaped carrier plate 10, the second electrode 32, and the displacement device 33, the frame-shaped carrier plate 10 is simply used to carry the object to be processed 1 without complicated electrode components. Therefore, the frame-shaped carrier plate 10 is The cost is lower, and replacement costs after damage or contamination by plasma-generated particles can also be significantly reduced.

6. Use the horizontal adjustment module 34 to change the vertical distance between the connecting plate 334 and the moving part 332 to correct the level of the second electrode 32 to ensure the overall accuracy of the process machine.

7. The distance adjustment module 35 is used to limit the displacement distance of the second electrode 32 toward the first electrode 31 in order to adapt to frame-shaped carrier plates 10 of different sizes or different sizes of objects 1 to be processed.

8. By using the clamping device 36 and the second electrode 32 to fix the object to be processed 1, the object to be processed 1 can be clamped and fixed, and the object to be processed 1 can be prevented from bending and warping due to heat, which affects the plasma treatment effect.

The above embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. All modifications or changes that do not violate the spirit of the present invention fall within the scope of the invention.

1: Materials to be processed 100: Continuous plasma process system with positioning electrodes 10: Frame-shaped carrier plate 20: Loading the cavity 30: Processing cavity 31: First electrode 32: Second electrode 321: Anti-slip parts 3211: Anti-slip section 3212:Exhaust channel 322:Air intake hole 323: vent 324: Elastic conductive parts 33: Displacement device 331:Driving parts 332:Moving parts 333: Elastic grounding piece 334:Connection board 34: Horizontal adjustment module 35: Distance adjustment module 36: Clamping device 37:Platform 371: Limiting part 40: Load out the cavity 50:Transmission device S: processing space Z: cooling zone P1: power off position P2: conductive position

Figure 1 is a schematic diagram of the appearance of a plasma processing system according to an embodiment of the present invention. Figure 2 is a schematic cross-sectional view of the processing chamber according to the first embodiment of the present invention. Figure 3 is a partially enlarged schematic diagram (1) of Figure 2, showing that the second electrode is in a power-off position. FIG. 4 is a partially enlarged schematic diagram (2) of FIG. 2 to show that the second electrode is located at a conductive position. Figure 5 is a top view of the anti-slip component of the first embodiment of the present invention. Figure 6 is a schematic diagram of cooling gas flow according to the first embodiment of the present invention. Figure 7 is a top view of the anti-slip component of the second embodiment of the present invention. Figure 8 is a schematic diagram of cooling gas flow according to the second embodiment of the present invention. Figures 9a to 9b are a partially enlarged schematic view (3) of Figure 2 of the present invention, showing that the level adjustment module adjusts the level of the second electrode.

1: Materials to be processed

10: Frame-shaped carrier plate

30: Processing cavity

31: First electrode

32: Second electrode

321: Anti-slip parts

322:Air intake hole

323: vent

324: Elastic conductive parts

33: Displacement device

331:Driving parts

332:Moving parts

333: Elastic grounding piece

334:Connection board

34: Horizontal adjustment module

35: Distance adjustment module

36: Clamping device

37:Platform

371: Limiting part

50:Transmission device

S: processing space

Claims (16)

A continuous plasma process system with positioning electrodes, which includes: A frame-shaped carrier plate is used to carry an object to be processed; A loading cavity, which is used to input the object to be processed; A processing chamber connected to the loading chamber, the processing chamber receiving the object to be processed and performing plasma treatment on the object to be processed, the processing chamber having a first electrode, a second electrode and a displacement device, the first electrode and the second electrode are arranged oppositely at both ends of the processing cavity and form a processing space, the displacement device is connected to the second electrode, and an anti-slip member is protruding from the surface of the second electrode. The component surrounds the surface of the second electrode to form a cooling area. After the frame-shaped carrier plate moves to the processing space, the displacement device can control the second electrode to be in a power-off position or a conductive position. When the second electrode When the electrode is in the conductive position, the object to be processed is positioned on the cooling area of the second electrode by contacting the anti-slip member; and A load-out cavity is connected to the processing cavity, and the load-out cavity receives and outputs the processed object to be processed. The continuous plasma processing system with positioning electrodes as described in claim 1, wherein the second electrode is provided with an air inlet, and the air inlet is connected to the cooling area. When the second electrode is located at the conductive position, the The air inlet hole is provided to input a cooling gas into the cooling zone to cool the object to be processed. The continuous plasma processing system with positioning electrodes as described in claim 2, wherein the anti-slip member is in the shape of a closed ring, the second electrode is provided with an air outlet hole at a different position from the air inlet hole, and the air outlet hole is connected In the cooling area, the cooling gas is discharged from the air outlet. The continuous plasma process system with positioning electrodes as described in claim 2, wherein the anti-slip component is a plurality of anti-slip sections arranged at intervals, an exhaust channel is formed between each anti-slip section, and each exhaust channel is connected to the In the cooling zone, the cooling gas is discharged from the exhaust channel. The continuous plasma processing system with positioning electrodes as claimed in claim 1, wherein the vertical height of the anti-slip member protruding from the surface of the second electrode is between 0.5 mm and 2 mm. The continuous plasma processing system with positioning electrodes as described in claim 1, wherein the anti-slip part is made of silicone or rubber. The continuous plasma processing system with positioning electrodes as claimed in claim 1, wherein when the second electrode is far away from the first electrode and not in contact with the object to be processed, the second electrode is in the power-off position. The second electrode moves in the direction of the first electrode and passes through the frame-shaped carrier plate, and when the object to be processed is released from the frame-shaped carrier plate, the second electrode is located at the conductive position. The continuous plasma processing system with positioning electrodes as described in claim 7, wherein one side of the displacement device connected to the second electrode has an elastic grounding member corresponding to the position of the frame-shaped carrier plate. When the second electrode When located at the conductive position, the elastic grounding member contacts the frame-shaped carrier plate. The continuous plasma processing system with positioning electrodes as described in claim 7, wherein when the second electrode is located at the conductive position, there is a separation distance between the object to be processed and the frame-shaped carrier plate. The continuous plasma processing system with positioning electrodes as described in claim 1, wherein the first electrode and the second electrode are oppositely arranged in the processing chamber in a vertical direction, and the continuous plasma processing system further has A transmission device allows the frame-shaped carrier plate to perform a horizontal displacement in the processing cavity. The continuous plasma processing system with positioning electrodes as claimed in claim 1, wherein the displacement device has a driving member and a moving member, and the moving member is moved by the driving member and drives the second electrode to move. The continuous plasma processing system with positioning electrodes as described in claim 11, wherein the processing chamber has a platform, the displacement device further has a connecting plate, one end of the driving member is connected to the platform, and the other end pushes against the connection One end of the moving member is connected to the connecting plate, and the other end passes through the platform and contacts the second electrode. The connecting plate is moved by the driving member and drives the moving member and the second electrode to move. The continuous plasma processing system with positioning electrodes as described in claim 12, wherein a level adjustment module is provided between the driving member and the moving member, one end of the moving member is connected to the level adjustment module, and the other end is in contact with The second electrode and the level adjustment module can change the vertical distance between the connecting plate and the moving part to adjust the level of the second electrode. The continuous plasma process system with positioning electrodes as described in claim 12, wherein the platform is provided with a limiting part, and the connecting plate is provided with a distance adjustment module corresponding to the limiting part, and the limiting part can The distance adjustment module contacts the distance adjustment module to limit a movement distance of the displacement device in the direction of the first electrode, and the distance adjustment module can adjust the size of the movement distance. The continuous plasma processing system with positioning electrodes as claimed in claim 1, wherein the processing chamber further has a clamping device, and the clamping device is fixed in the processing space to fix the object to be processed. The continuous plasma processing system with positioning electrodes as claimed in claim 15, wherein when the second electrode is located at the conductive position, the second electrode and the clamping device clamp the object to be processed from both sides respectively.

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