TWI815048B - 半導體裝置和形成用於預模製基板的模具剝離結構的方法 - Google Patents
半導體裝置和形成用於預模製基板的模具剝離結構的方法 Download PDFInfo
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- TWI815048B TWI815048B TW109136090A TW109136090A TWI815048B TW I815048 B TWI815048 B TW I815048B TW 109136090 A TW109136090 A TW 109136090A TW 109136090 A TW109136090 A TW 109136090A TW I815048 B TWI815048 B TW I815048B
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Abstract
一種半導體裝置具有基板面板,所述基板面板具有基板,該基板包括第一基板區域和在第一基板區域的覆蓋區之外的第二基板區域。多個半導體晶粒或離散IPD設置在第一基板區域上方。基板區域102a具有用於半導體晶粒的電互連件。使用轉移模具製程將模製化合物設置在半導體晶粒和第一基板區域上方,該製程會留下在第二基板區域上方的模具殘料廢品和模具澆口。基板邊緣形成在模具澆口下方的第二基板區域中。基板邊緣延伸到模製化合物下方的第一基板區域中,以強化模具澆口且減少模具剝離期間的破裂。基板邊緣可具有多種形式,例如平行桿、斜對角桿、正交桿及其之組合。
Description
本發明總體上涉及半導體裝置,並且更具體地,涉及一種半導體裝置和形成用於預模製基板的模具剝離結構的方法。
本申請案主張於2019年11月15日提交的美國臨時申請案第62/936,027號的權益,該申請案通過引用併入本文。
在現代的電子產品中經常發現半導體裝置。半導體裝置會實施各式各樣的功能,例如,訊號處理、高速計算、傳送與接收電磁訊號、控制電子裝置、光電轉換以及產生電視顯示器的視覺投影。在通訊領域、電力轉換領域、網路領域、電腦領域、娛樂領域以及消費性產品領域中皆會發現半導體裝置。在軍事應用、航空、自動車、工業控制器以及辦公室設備中同樣會發現半導體裝置。
半導體晶粒和/或離散的積體被動裝置(IPD)可以整合到半導體封裝件中。圖1例示習知半導體基板面板50,其具有含有垂直傳導互連件54的基板52和通過凸塊58安裝到傳導互連件的半導體晶粒或被動離散IPD 56。半導體晶粒
或被動離散IPD 56被安裝到基板52以用於結構支撐和電性互連。使用轉移模製製程將囊封物或模製化合物60沉積在半導體晶粒、離散IPD和基板面板上方。半導體基板面板50被放置在模具空腔中。預定量的模製化合物被放入轉移缸(transfer pot)中、經加熱且接著進入模具空腔中以覆蓋半導體晶粒或被動離散IPD 56和基板52。在模具轉移之後,模具澆口62仍然保留。模具澆口62由基板邊緣68支撐,基板邊緣68完全設置在囊封物60的覆蓋區之外而在半導體晶粒或被動離散IPD 56上方。基板邊緣68由具有實心導軌邊緣70和圓形柱形(stud)圖案72的銅(Cu)製成。
已知半導體基板面板50在模具剝離期間(即,在移除模具澆口62時)在位置80附近破裂或折斷。模製化合物60具有很高的黏性,並且在模具剝離期間會從半導體基板面板50週邊附近的垂直傳導互連件54上剝離一些金屬,這會導致缺陷且降低產量。一種已知的開裂方法是至少在半導體基板面板50週邊附近用金來鍍覆垂直傳導互連件54。然而,金的鍍覆增加了製造成本。
本發明的一態樣為一種半導體裝置,包括:基板面板,其包括基板及多個半導體晶粒,所述基板包括第一基板區域和在所述第一基板區域的覆蓋區之外的第二基板區域,所述多個半導體晶粒設置在所述第一基板區域上方;模製化合物,其設置在所述半導體晶粒和所述第一基板區域上方;及基板邊緣,其形成在所述第二基板區域中,其中所述基板邊緣延伸至在所述模製化合物下方的所述第一基板區域中。
在本發明的此態樣的半導體裝置中,所述基板邊緣具有由實心正方形、互連桿、斜對角桿及平行桿所組成的群組所選出的形狀。
在本發明的此態樣的半導體裝置中,所述模製化合物的部分在所
述第二基板區域上方延伸。
在本發明的此態樣的半導體裝置中,所述基板邊緣包括在所述模製化合物下方延伸的懸臂部分。
本發明的另一態樣為一種半導體裝置,包括:基板面板,其包括基板及多個半導體晶粒,所述基板包括第一基板區域和第二基板區域,所述多個半導體晶粒設置在所述第一基板區域上方;模製化合物,其設置在所述半導體晶粒和所述第一基板區域上方;及基板邊緣,其形成在所述第二基板區域中且延伸至所述第一基板區域中。
在本發明的另一態樣的半導體裝置中,所述第二基板區域設置在所述第一基板區域的覆蓋區之外。
在本發明的另一態樣的半導體裝置中,所述基板邊緣具有由實心正方形、互連桿、斜對角桿及平行桿所組成的群組所選出的形狀。
在本發明的另一態樣的半導體裝置中,所述模製化合物的部分在所述第二基板區域上方延伸。
在本發明的另一態樣的半導體裝置中,所述基板邊緣包括在所述模製化合物下方延伸的懸臂部分。
在本發明的另一態樣的半導體裝置中,所述基板邊緣的表面與所述基板的表面共面。
本發明的又一態樣為一種製造半導體裝置的方法,包括:提供基板面板,其包括基板以及多個半導體晶粒,所述基板包括第一基板區域和第二基板區域,所述多個半導體晶粒設置在所述第一基板區域上方;將模製化合物沉積在所述半導體晶粒和所述第一基板區域上方;及形成基板邊緣在所述第二基板區域中且延伸至所述第一基板區域中。
在本發明的又一態樣的方法中,所述第二基板區域設置在所述第
一基板區域的覆蓋區之外。
在本發明的又一態樣的方法中,所述基板邊緣具有由實心正方形、互連桿、斜對角桿及平行桿所組成的群組所選出的形狀。
在本發明的又一態樣的方法中,所述模製化合物的部分在所述第二基板區域上方延伸。
在本發明的又一態樣的方法中,所述基板邊緣包括在所述模製化合物下方延伸的懸臂部分。
50:半導體基板面板
52:基板
54:垂直傳導互連件
56:半導體晶粒或被動離散IPD
58:凸塊
60:囊封物/模製化合物
62:模具澆口
68:基板邊緣
70:導軌邊緣
72:圓形柱形圖案
80:位置
100:半導體基板面板
102:基板
102a:基板區域
102b:基板區域
104:半導體晶粒/離散IPD
110:囊封物/模製化合物
112:模具殘料廢品
114:模具澆口
114a:模具澆口
114b:模具澆口
124:垂直傳導互連件
126:傳導跡線
128:傳導通孔
130:凸塊
142:基板邊緣
144:區域
145:表面
146:懸臂部分
148:位置
149:底表面
150:底部填充材料
160:形狀
162:圓圈
170:平行桿
172:圓圈
180:斜對角平行桿
182:圓圈
190:互連平行桿
192:圓圈
194:邊界
200:斜對角桿和平行桿
202:圓圈
210:平行和正交桿
212:圓圈
222:圓圈
[圖1]例示容易破裂的習知半導體基板面板。
[圖2]例示具有模具澆口轉移結構的半導體基板面板。
[圖3a至圖3b]例示具有基板邊緣強化結構的半導體基板面板的進一步細節。
[圖4]例示基板邊緣結構的俯視圖。
[圖5]例示基板邊緣結構的第二實施例。
[圖6]例示模具基板邊緣結構的第三實施例。
[圖7a至圖7b]例示基板邊緣結構的第四實施例。
[圖8]例示基板邊緣結構的第五實施例。
[圖9]例示基板邊緣結構的第六實施例。
[圖10]例示基板邊緣結構的第七實施例。
本發明被描述在參照附圖的以下描述的一個或多個實施例中,其中相似的元件符號表示相同或相似的元件。雖然本發明被以用於實現本發明的
目標的最佳模式方式來描述,但是熟知本領域的技術人士會了解它意圖覆蓋替換、修改和等同物,如可以被包括藉由下述揭示內容和附圖所支持之所附的申請專利範圍書和它們的均等物所定義的本發明的精神和範圍內。如本文所用的術語「半導體晶粒」代表了單數和複數形式的詞語,並且因此,可以代表單一個半導體裝置和複數個半導體裝置。
半導體裝置一般使用兩個複雜製造製程而製造:前端製造和後端製造。前端製造涉及複數個晶粒在半導體晶圓的表面上形成。在晶圓上的每個晶粒包含被動和主動電性構件,其被電連接以形成功能電路。諸如電晶體和二極體的主動電子構件具有控制電流的流動的能力。諸如電容器、電感器和電阻器的被動電性構件創建了執行電路功能所需要的在電壓和電流之間的關係。
後端製造涉及將成品晶圓切割或單粒化成個別的半導體晶粒,然後封裝半導體晶粒以用於結構支撐、電性互連和環境隔離。為了單粒化半導體晶粒,晶圓沿著被稱為鋸切道或劃線之晶圓的非功能區域來刻痕且斷裂。晶圓使用雷射切割工具或鋸片來單粒化。單粒化後,個別的半導體晶粒被安裝到包括用於與其他系統構件互連的接腳或接觸墊之封裝基板。形成在半導體晶粒上方的接觸墊接著連接到封裝件內的接觸墊。電性連接可以傳導層、凸塊、柱形凸塊、導電膏或引線接合來進行。囊封物或其它模製材料沉積在封裝件上方以提供物理支撐和電性絕緣。成品封裝件接著被插入至電性系統,並且半導體裝置的功能被提供給其它系統構件。
圖2示出了具有基板102的半導體基板面板100,基板102為多個半導體晶粒或離散IPD 104提供結構支撐和電性互連。半導體晶粒104的主動表面包含類比或數位電路,該類比或數位電路被實現為形成在晶粒內且根據晶粒的電性設計和功能而電性互連的主動裝置、被動裝置、傳導層和介電層。例如,電路可以包括形成在主動表面內的一或多個電晶體、二極體和其他電路元件,以實現
類比電路或數位電路,例如數位信號處理器(DSP)、特定應用積體電路(ASIC)、記憶體或其他信號處理電路。半導體晶粒104還可包含用於RF信號處理的IPD,例如電感器、電容器和電阻器。
使用拾取和放置操作將半導體晶粒或離散IPD 104設置在基板102的基板區域102a中。基板區域102b是基板102在基板區域102a的覆蓋區附近和外部的部分。沒有半導體晶粒104設置在基板區域102b上。半導體基板面板100可以包含數百或數千個半導體晶粒104。
使用轉移模製製程將囊封物或模製化合物110沉積在半導體晶粒或離散IPD 104和基板區域102a上方。未模製的半導體基板面板100被放置在模具空腔中。預定量的模製化合物被放入轉移缸中、加熱且接著在壓力下(例如,柱塞(plunger))經由澆口壓入模具空腔中,以覆蓋半導體晶粒或離散IPD 104和基板102。在模具轉移之後,模具殘料廢品(cull)112和模具澆口114仍保留。模具殘料廢品112是後轉移缸模具中的剩餘或過量模具材料。模具澆口114是後澆口模具中的剩餘模具材料。囊封物110可以是聚合物複合材料,例如具有填充物的環氧樹脂、具有填充物的環氧丙烯酸酯或具有適當填充物的聚合物。囊封物110是非傳導性的、提供結構支撐並且在環境上保護半導體裝置免受外部元件和污染物的影響。
圖3a例示具有基板區域102a的半導體基板面板100的一部分的進一步細節,基板區域102a包含垂直傳導互連件124,該垂直傳導互連件124包括使用PVD、CVD、電解電鍍、無電解電鍍或其他合適的金屬沉積製程製成的傳導跡線126和傳導通孔128。傳導跡線126和傳導通孔128可以是由鋁(Al)、銅(Cu)、錫(Sn)、鎳(Ni)、金(Au)、銀(Ag)或其他合適的導電材料所組成的一層或多層。半導體晶粒或離散IPD 104以凸塊130安裝到基板區域102a的傳導跡線126(例如以倒裝晶片配置的方式),以用於結構支撐和電性互連。
將囊封物或模製化合物110沉積在半導體晶粒或離散IPD 104和基板區域102a上方,而留下模具澆口114,見圖2。在一實施例中,模具澆口114由基板區域102b中的實心金屬基板邊緣142支撐。使用PVD、CVD、電解電鍍、無電解電鍍或其他合適金屬沉積製程在基板102上方形成基板邊緣142。基板邊緣142包括由以下所組成的一或多層:Al、Cu、Sn、Ni、Au、Ag、Ti、TiW、W或其他合適的材料或其組合。
基板邊緣142的表面145與基板102的底表面149共面。基板邊緣142延伸橫跨區域144,並且基板邊緣142的懸臂部分146在囊封物110的一部分下方進一步延伸約4至5毫米(mm)而至位置148。底部填充材料150形成在傳導通孔128之間的基板區域102a中和懸臂部分146下方。底部填充材料150也形成在基板區域102b中的基板邊緣142附近。底部填充材料150可以是環氧樹脂黏合劑材料。延伸橫跨區域144的基板邊緣142和在囊封物110下方延伸的懸臂部分146提供強化,且減少在模具剝離期間對半導體基板面板100的破裂或損壞的發生。
圖3b是圖3a所示的模具澆口114和基板邊緣142的剖視圖。模具澆口114具有約2.5mm的寬度W114。模具邊緣142具有約4.0mm的寬度W142。
圖4是兩個模具澆口114a和114b的俯視圖,其提供了囊封物110在基板區域102a上方的轉移模製。在一實施例中,基板邊緣142具有“H”的形狀160,如虛線所例示。在基板區域102b中,圓圈162形成虛設鍍覆銅圖案,即沒有電性功能。
圖5是兩個模具澆口114a和114b的另一實施例的俯視圖,其提供了囊封物110在基板區域102a上方的轉移模製。在這種情況下,基板邊緣142具有多個平行桿170。在基板區域102b中,圓圈172形成虛設鍍覆銅圖案,即沒有電性功能。
圖6是兩個模具澆口114a和114b的另一實施例的俯視圖,其提供
了囊封物110在基板區域102a上方的轉移模製。在這種情況下,基板邊緣142具有多個斜對角平行桿180。在基板區域102b中,圓圈182形成虛設鍍覆銅圖案,即沒有電性功能。
圖7a是兩個模具澆口114a和114b的另一實施例的俯視圖,其提供了囊封物110在基板區域102a上方的轉移模製。在這種情況下,基板邊緣142具有多個互連平行桿190。在基板區域102b中,圓圈192形成虛設鍍覆銅圖案,即沒有電性功能。
圖7b是圖7a的實施例的仰視圖。基板邊緣142從基板區域102a和102b之間的邊界194延伸到囊封物110下方的基板區域102a中,而至少到達位置148。互連平行桿190與基板區域102b的底表面共面。
圖8是兩個模具澆口114a和114b的另一實施例的俯視圖,其提供了囊封物110在基板區域102a上方的轉移模製。在這種情況下,基板邊緣142具有多個斜對角桿和平行桿200。在基板區域102b中,圓圈202形成虛設鍍覆銅圖案,即沒有電性功能。
圖9是兩個模具澆口114a和114b的另一實施例的俯視圖,其提供了囊封物110在基板區域102a上方的轉移模製。在這種情況下,基板邊緣142具有多個平行和正交桿210。在基板區域102b中,圓圈212形成虛設鍍覆銅圖案,即沒有電性功能。
圖10是兩個模具澆口114a和114b的另一實施例的俯視圖,其提供了囊封物110在基板區域102a上方的轉移模製。在這種情況下,基板邊緣142是實心正方形。在基板區域102b中,圓圈222形成虛設鍍覆銅圖案,即沒有電性功能。
對於以上每個示例,基板邊緣142在模具澆口114a和114b以及基板區域102a下方提供強化,以防止在移除模具澆口時損壞半導體基板面板100。
雖然本發明的一個或多個實施例已進行了詳細說明,但是本領域
技術人將了解可以對這些實施例進行調整和修改而不脫離如在下面請求項中闡述的本發明的精神和範疇。
102:基板
102a:基板區域
102b:基板區域
110:囊封物/模製化合物
114a:模具澆口
114b:模具澆口
142:基板邊緣
160:形狀
162:圓圈
Claims (14)
- 一種半導體裝置,包括:基板面板,其包括基板及多個半導體晶粒,所述基板包括第一基板區域和在所述第一基板區域的覆蓋區之外的第二基板區域,所述多個半導體晶粒設置在所述第一基板區域上方;模製化合物,其設置在所述多個半導體晶粒和所述第一基板區域上方;及基板邊緣,其部分形成在所述第二基板區域中並且從所述第二基板區域延伸至在所述模製化合物下方的所述第一基板區域中,其中所述基板邊緣包括在所述模製化合物下方延伸的懸臂部分。
- 如請求項1所述的半導體裝置,其中所述基板邊緣具有由實心正方形、互連桿、斜對角桿及平行桿所組成的群組所選出的形狀。
- 如請求項1所述的半導體裝置,其中所述模製化合物的部分在所述第二基板區域上方延伸。
- 一種半導體裝置,包括:基板面板,其包括基板及多個半導體晶粒,所述基板包括第一基板區域和第二基板區域,所述多個半導體晶粒設置在所述第一基板區域上方;模製化合物,其設置在所述多個半導體晶粒和所述第一基板區域上方;及基板邊緣,其部分形成在所述第二基板區域中且從所述第二基板區域延伸至在所述模製化合物下方的所述第一基板區域中。
- 如請求項4所述的半導體裝置,其中所述第二基板區域設置在所述第一基板區域的覆蓋區之外。
- 如請求項4所述的半導體裝置,其中所述基板邊緣具有由實心正方形、互連桿、斜對角桿及平行桿所組成的群組所選出的形狀。
- 如請求項4所述的半導體裝置,其中所述模製化合物的部分在所 述第二基板區域上方延伸。
- 如請求項4所述的半導體裝置,其中所述基板邊緣包括在所述模製化合物下方延伸的懸臂部分。
- 如請求項4所述的半導體裝置,其中所述基板邊緣的表面與所述基板的表面共面。
- 一種製造半導體裝置的方法,包括:提供基板面板,其包括基板以及多個半導體晶粒,所述基板包括第一基板區域和第二基板區域,所述多個半導體晶粒設置在所述第一基板區域上方;將模製化合物沉積在所述多個半導體晶粒和所述第一基板區域上方;及部分地在所述第二基板區域中形成且從所述第二基板區域延伸至在所述模製化合物下方的所述第一基板區域中的基板邊緣。
- 如請求項10所述的方法,其中所述第二基板區域設置在所述第一基板區域的覆蓋區之外。
- 如請求項10所述的方法,其中所述基板邊緣具有由實心正方形、互連桿、斜對角桿及平行桿所組成的群組所選出的形狀。
- 如請求項10所述的方法,其中所述模製化合物的部分在所述第二基板區域上方延伸。
- 如請求項10所述的方法,其中所述基板邊緣包括在所述模製化合物下方延伸的懸臂部分。
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JP2008060160A (ja) * | 2006-08-29 | 2008-03-13 | Shinko Electric Ind Co Ltd | 樹脂封止型半導体装置の製造方法 |
US20120048595A1 (en) * | 2010-09-01 | 2012-03-01 | Elpida Memory, Inc. | Wiring board and method of manufacturing a semiconductor device |
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