TWI814148B - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention includes: a processing container that accommodates a substrate in a processing space; a fluid supply unit that supplies a processing fluid for supercritical processing to the processing space; and a fluid discharge unit that is formed in the processing container and communicates with the processing space. The exhaust flow path discharges the processing fluid from the processing space; and the rectification part is provided at the rectification position of the exhaust flow path; the rectification part rectifies the processing fluid flowing into the rectification position when the processing fluid is discharged through the fluid discharge part The rectification is performed to adjust the balance between the flow of the processing fluid on the processing space side relative to the rectification position and the flow of the processing fluid on the fluid discharge unit side relative to the rectification position.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus that uses a processing fluid to process a substrate in a processing container.

The contents disclosed in the description, drawings and patent scope of the Japanese application shown below are incorporated into this specification for reference: Japanese Patent Application No. 2020-194879 (filed on November 25, 2020).

The processing steps of various substrates such as semiconductor substrates and glass substrates for display devices include the step of treating the surface of the substrate with various processing fluids. Conventionally, liquids such as chemicals and cleaning fluids have been widely used as treatment fluids. However, in recent years, treatment using supercritical fluids has also been put into practical use. In particular, in the processing of substrates with fine patterns formed on the surface, supercritical fluids with low surface tension can penetrate deeper into the gaps of the patterns more easily than liquids, so processing can be performed with high efficiency. In addition, it can reduce the risk of drying. Risk of pattern collapse caused by surface tension.

For example, Japanese Patent Application Laid-Open No. 2018-082043 describes a substrate processing device that uses a supercritical fluid to perform a drying process on a substrate. This apparatus includes a processing container in which two plate-shaped members are arranged facing each other so that a gap between them functions as a processing space. The wafer (substrate) placed on the thin holding plate is loaded from one end of the processing space, and supercritical carbon dioxide is introduced from the other end. In addition, a fluid discharge header is provided in the processing container. A discharge port is connected to the fluid discharge header, and the supercritical fluid is discharged from the processing space to the outside of the processing container through the fluid discharge header and the discharge port. Furthermore, the structure of discharging the supercritical fluid from the processing space is also described in detail in Japanese Patent Application Laid-Open Nos. 2013-033963, 2017-157745, and 2019-091772.

Although the fluid discharge header and the discharge port form an exhaust flow path for the supercritical fluid from the processing space, the balance of the exhaust cannot be achieved in the exhaust flow path, which causes the following problems. That is, on the inlet side of the exhaust flow path, the fluid discharge header is extended in the width direction of the substrate, and the supercritical fluid system flows into the fluid discharge header from a wider range in the width direction. On the other hand, on the outlet side of the exhaust flow path, the supercritical fluid system flowing inside the fluid discharge header is discharged from a part of the fluid discharge header to the outside of the processing container. For example, in the device described in Japanese Patent Application Laid-Open No. 2018-082043, the fluid is discharged from discharge ports connected to both ends of the fluid discharge header to the outside of the processing container. Therefore, the exhaust gas becomes unbalanced on the inlet side and the outlet side of the exhaust flow path, and particularly on the inlet side of the exhaust flow path, the supercritical fluid backflows toward the processing space. As a result, components and particles eluted from the treated supercritical fluid may reattach to the substrate, thereby causing contamination of the substrate.

The present invention was made in view of the above problems, and its object is to effectively prevent the processed processing fluid from flowing back toward the processing space and contaminating the substrate in a substrate processing technology that uses a processing fluid to process a substrate in a processing space of a processing container. .

In one aspect of the present invention, a substrate processing apparatus is characterized in that it is provided with: a processing container that accommodates a substrate in a processing space; and a fluid supply unit that supplies a processing fluid for supercritical processing into the processing space; The fluid discharge part discharges the processing fluid from the processing space through the exhaust flow path formed in the processing container and communicates with the processing space; and the rectification part is provided at the rectification position of the exhaust flow path; the rectification part is When the processing fluid is discharged through the fluid discharge part, the processing fluid flowing into the rectification position is rectified, thereby adjusting the flow of the processing fluid on the side of the processing space relative to the rectification position, and the flow of the processing fluid on the side of the fluid discharge part relative to the rectification position. the balance of flow.

In the invention configured in this way, although the processing fluid in the processing space is discharged to the outside of the device through the exhaust flow path through the fluid discharge part, if the exhaust gas is balanced between the inlet side (processing space side) and the outlet of the exhaust flow path If the side (fluid discharge portion side) is out of balance, the processing fluid may flow backward from the exhaust flow path toward the processing space. Therefore, in the present invention, the exhaust flow path is provided with a rectifying portion, and when the processing fluid is discharged by the fluid discharge portion, the processing fluid flowing into the rectifying position is rectified. As a result, it is possible to adjust the flow of the processing fluid relative to the rectification position on the processing space side (the inlet side of the exhaust flow path) and the flow of the processing fluid relative to the rectification position on the fluid discharge portion side (the outlet side of the exhaust flow path). balance.

As mentioned above, according to the present invention, since the exhaust balance in the exhaust flow path is adjusted, it can effectively prevent the processed processing fluid from flowing back into the processing space and contaminating the substrate.

Not all of the plurality of constituent elements of the above-mentioned aspects of the present invention are essential. In order to solve part or all of the above-mentioned problems or to achieve part or all of the effects described in this specification, it may be appropriately modified. Some of the constituent elements are changed, deleted, exchanged with other new constituent elements, and part of the limited content is deleted. In addition, in order to solve part or all of the above problems, or to achieve part or all of the effects described in this specification, it is possible to combine part or all of the technical features contained in one aspect of the above-described invention with the above-described invention. Some or all of the technical features contained in other aspects are combined to form an independent form of the present invention.

FIG. 1 is a diagram showing the schematic structure of a first embodiment of a substrate processing apparatus according to the present invention. This substrate processing device 1 is a device for processing the surface of various substrates such as semiconductor substrates using a supercritical fluid. In order to unify the directions in the following figures, the XYZ orthogonal coordinate system is set as shown in Figure 1. Among them, the XY plane is the horizontal plane, and the Z direction shows the vertical direction. More specifically, the (-Z) direction shows vertical downward.

Here, the "substrate" in this embodiment can be applied to a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for FED (Field Emission Display), a substrate for an optical disc, a magnet Various substrates such as disc substrates and magneto-optical disc substrates. In the following, although a substrate processing apparatus used for processing semiconductor wafers is mainly used as an example for description with reference to the drawings, the apparatus can be similarly applied to the processing of various substrates exemplified above.

The substrate processing apparatus 1 includes a processing unit 10 , a supply unit 50 , and a control unit 90 . The processing unit 10 becomes the execution body of the supercritical drying process, and the supply unit 50 supplies the chemical substances and power required for the processing to the processing unit 10 .

The control unit 90 controls each part of the devices to implement predetermined processing. For this purpose, the control unit 90 has a CPU 91 that executes various control programs, a memory 92 that temporarily stores processing data, a storage 93 that stores control programs executed by the CPU 91, and is used to exchange information with users and external devices. The interface 94 and so on. The operation of the device described later is realized by the CPU 91 executing a control program written in advance in the memory 93 to cause each part of the device to perform predetermined operations.

The processing unit 10 includes a processing chamber 100 . The processing chamber 100 has a first component 11 , a second component 12 and a third component 13 respectively formed of metal blocks. The first member 11 and the second member 12 are coupled in the up-down direction by a coupling member not shown in the figure, and the third member 13 is coupled to the (+Y) side by a coupling member not shown in the figure to form The processing chamber 100 has a cavity structure inside. The internal space of the cavity becomes the processing space SP where the substrate S is processed. The substrate S to be processed is moved into the processing space SP to be processed. A slit-shaped opening 101 extending elongatedly in the X direction is formed on the (-Y) side of the processing chamber 100, and the processing space SP communicates with the external space through the opening 101.

A cover member 14 is provided on the (-Y) side of the processing chamber 100 so as to block the opening 101 . On the (+Y) side of the cover member 14, a flat support tray 15 is installed in a horizontal position, and the upper surface of the support tray 15 becomes a support surface on which the substrate S can be placed. More specifically, the support tray 15 has a structure in which a recess 152 formed slightly larger than the plane size of the substrate S is provided on a substantially flat upper surface 151 . By accommodating the substrate S in the recessed portion 152 , the substrate S is held at a predetermined position on the support tray 15 . The substrate S is held so that the surface of the processing object (hereinafter also referred to as the "substrate surface") Sa faces upward. At this time, it is preferable that the upper surface 151 of the support tray 15 and the substrate surface Sa are formed in the same plane.

The cover member 14 is supported to be horizontally movable in the Y direction by a support mechanism (not shown). In addition, the cover member 14 is movable forward and backward with respect to the processing chamber 100 by the forward and backward mechanism 53 provided in the supply unit 50 . Specifically, the forward and backward mechanism 53 has a linear movement mechanism such as a linear motor, a linear guide rail, a ball screw mechanism, an electromagnetic coil, an air cylinder, etc., and moves the cover member 14 in the Y direction by such a linear movement mechanism. The forward and backward mechanism 53 operates according to the control command from the control unit 90 .

When the cover member 14 moves in the (-Y) direction and the support tray 15 is pulled out from the processing space SP through the opening 101, the support tray 15 can be accessed from the outside. That is, the substrate S can be placed on the support tray 15 and the substrate S placed on the support tray 15 can be taken out. On the other hand, the support tray 15 is accommodated in the processing space SP by moving the cover member 14 in the (+Y) direction. With the substrate S placed on the support tray 15, the substrate S is carried into the processing space SP together with the support tray 15.

In the supercritical drying process, which has the main purpose of drying the substrate while preventing pattern collapse due to the surface tension of the liquid, in order to prevent the surface Sa of the substrate S from being exposed and causing pattern collapse, the substrate S is placed on the surface Sa by It is carried in the state covered by the liquid film. As the liquid constituting the liquid film, organic solvents with low surface tension, such as isopropyl alcohol (IPA) and acetone, can be suitably used.

By moving the lid member 14 in the (+Y) direction to close the opening 101, the processing space SP can be sealed. A sealing member 16 is provided between the (+Y) side surface of the cover member 14 and the (-Y) side surface of the processing chamber 100 in order to maintain the airtight state of the processing space SP. The sealing member 16 may use an elastic resin material such as a ring formed of rubber. In addition, the cover member 14 can be fixed to the processing chamber 100 by a locking mechanism (not shown). In a state where the airtight state of the processing space SP is ensured in this manner, the processing of the substrate S is performed in the processing space SP.

In this embodiment, a fluid that can be utilized in supercritical processing, such as carbon dioxide, can be supplied to the processing unit 10 from the fluid supply part 57 provided in the supply unit 50 in a gas or liquid state. Carbon dioxide becomes a supercritical state at relatively low temperature and low pressure, and has the property of being easily dissolved in organic solvents commonly used in substrate processing. Therefore, it is a chemical substance suitable for supercritical drying processing.

More specifically, the fluid supply unit 57 outputs a fluid in a supercritical state, or a fluid that is supplied in a gaseous or liquid state and subsequently becomes a supercritical state by applying a predetermined temperature and pressure to process the substrate S. fluid. For example, gaseous or liquid carbon dioxide is output under pressure. The fluid system is pressure-fed to the input ports 102 and 103 provided on the (+Y) side of the processing chamber 100 through the pipe 571 and the valves 572 and 573 inserted therein. That is, the valves 572 and 573 are opened based on the control command from the control unit 90, thereby transporting the fluid from the fluid supply part 57 into the processing chamber 100 (supply step).

2A and 2B are diagrams schematically showing the flow path of the treatment fluid. More specifically, FIG. 2A is a schematic diagram showing the outline of the flow path, and FIG. 2B is a top view thereof. Hereinafter, the structure of the flow path of the processing fluid will be described with reference to FIG. 1 , FIG. 2A and FIG. 2B .

The fluid flow path 17 from the input ports 102 and 103 to the processing space SP has a function of introducing the processing fluid supplied from the fluid supply unit 57 into the processing space SP. Specifically, a flow path 171 is connected to the input port 102 . A buffer space 172 is provided at the end of the flow path 171 on the opposite side to the input port 102. The buffer space 172 is formed by rapidly expanding the cross-sectional area of the flow path.

In addition, the buffer space 172 and the processing space SP are further provided with a flow path 173 to connect them. The flow path 173 has a cross-sectional shape that is narrow in the up-down direction (Z direction) and long in the horizontal direction (X direction) with a wide width, and its cross-sectional shape is approximately constant in the flow direction of the treatment fluid. The end of the flow path 171 on the opposite side to the buffer space 172 serves as an outlet 174 that opens to the processing space SP, and the processing fluid can be introduced into the processing space SP from the outlet 174 .

Preferably, when the support tray 15 is accommodated in the processing space SP, the height of the flow path 173 is equal to the distance between the top surface of the processing space SP and the substrate surface Sa. Furthermore, the discharge port 174 faces the gap between the top surface of the processing space SP and the upper surface 151 of the support tray 15 and has an opening shape. For example, the top surface of the flow path 173 and the top surface of the processing space SP may be the same plane. In this way, the discharge port 174 opens in the horizontal direction in an elongated slit shape facing the processing space SP.

A flow path for the treatment fluid is similarly formed below the support tray 15 . Specifically, a flow path 175 is connected to the input port 103 . A buffer space 176 is provided at the end of the flow path 175 on the opposite side to the input port 103. The buffer space 176 is formed by rapidly expanding the cross-sectional area of the flow path.

Furthermore, the buffer space 176 and the processing space SP are connected through the flow path 177 . The flow path 177 has a cross-sectional shape that is narrow in the up-down direction (Z direction) and long and wide in the horizontal direction (X direction), and its cross-sectional shape is approximately constant in the flow direction of the treatment fluid. The end of the flow path 177 on the opposite side to the buffer space 176 serves as a discharge port 178 that opens to face the processing space SP, and the processing fluid is introduced from the discharge port 178 into the processing space SP.

Preferably, the height of the flow path 177 is set to be equal to the distance between the bottom surface of the processing space SP and the lower surface of the support tray 15 . Furthermore, the discharge port 178 is opened to face the gap between the bottom surface of the processing space SP and the lower surface of the support tray 15 . For example, the bottom surface of the flow path 177 and the bottom surface of the processing space SP may be the same plane. That is, the discharge port 178 is an elongated slit-shaped opening facing the processing space SP in the horizontal direction.

Preferably, the arrangement position of the flow path 171 and the arrangement position of the flow path 173 are different in the Z direction. When the two are at the same height, part of the treatment fluid flowing from the flow path 171 into the buffer space 172 directly advances and flows into the flow path 173 . Therefore, in the X direction, which is the width direction of the flow path orthogonal to the flow direction, there is a difference in the flow rate and flow rate of the processing fluid flowing into the flow path 173 between the position corresponding to the flow path 171 and the position other than this position. The danger. In this case, the flow of the processing fluid flowing from the flow path 173 into the processing space SP generates non-uniformity in the X direction, which causes turbulence.

By staggering the flow path 171 and the flow path 173 in the Z direction, the processing fluid can be introduced into the processing space SP uniformly in the width direction without causing the linear progression of the processing fluid from the flow path 171 to the flow path 173 . laminar flow.

The processing fluid introduced through the introduction flow path 17 configured in this way flows along the upper and lower surfaces of the support tray 15 in the processing space SP, and is discharged to the outside of the processing container through the exhaust flow path 18 configured as follows ( discharge step). On the (-Y) side of the substrate S, the top surface of the processing space SP and the top surface 151 of the support tray 15 both form a horizontal plane, and they maintain a certain distance and face each other in parallel. This spacing serves to guide the processing fluid flowing along the upper surface 151 of the support tray 15 and the surface Sa of the substrate S to the fluid discharge portion 55 , such that the upstream region 181 of the exhaust flow path 18 functions. The upstream region 181 has a cross-sectional shape that is narrow in the up-down direction (Z direction) and long and wide in the horizontal direction (X direction).

The end of the upstream area 181 opposite to the processing space SP is connected to the buffer space 182 . The detailed structure will be described later. The buffer space 182 is a space surrounded by the processing chamber 100, the cover member 14, and the sealing member 16. The width of the buffer space 182 in the X direction is equal to or greater than the width of the upstream area 181 , and the height of the buffer space 182 in the Z direction is greater than the height of the upstream area 181 . Therefore, the buffer space 182 has a larger flow path cross-sectional area than the upstream region 181 .

A downstream area 183 is connected to the upper part of the buffer space 182 . The downstream region 183 is a through hole provided through the first member 11 constituting the upper block of the processing chamber 100 . The upper end forms the output port 104 that opens above the processing chamber 100 , and the lower end is open facing the buffer space 182 .

In this way, in this embodiment, the exhaust flow path 18 on the upper side of the support tray 15 has the following three areas: ‧The upstream area 181 is formed between the upper surface 151 of the support tray 15 and the lower surface of the first member 11; ‧Downstream region 183, which is connected to the fluid discharge part 55; and ‧The middle area (buffer space 182) connects the upstream area 181 and the downstream area 183. As shown in FIGS. 2A and 2B , the upstream region 181 and the buffer space 182 are set to a width greater than the diameter of the substrate S (equivalent to the "first width" of the present invention) in the X direction, and the X direction is The flow direction Y of the processing fluid from the processing space SP is orthogonal. In contrast, the width of the downstream region 183 in the X direction (corresponding to the "second width" in the present invention) is significantly reduced. Therefore, as in the prior art, when no special treatment is applied to the exhaust flow path 18, a counterflow of the processing fluid is generated on the inlet side of the exhaust flow path 18, that is, the upstream region 181, and the processed processing fluid has its own The upstream area 181 flows into the processing space SP. Therefore, in this embodiment, as shown in FIGS. 2A and 2B , a part of the first member 11 (the partition wall 112 described later) is extended in the buffer space 182 , and the end on the (-Y) direction side is extended. It is processed into a concave and convex shape to function as the "rectifying part" of the present invention. Furthermore, these characteristics will be described in detail later.

Similarly, the bottom surface of the processing space SP and the bottom surface of the support tray 15 both form a horizontal plane, and they maintain a certain distance and face each other in parallel. This spacing can serve as the upstream region 185 of the exhaust flow path 18 by guiding the processing fluid flowing along the lower surface of the support tray 15 to the fluid discharge portion 55 . In addition, like the upper side of the support tray 15 , the upstream area 185 on the lower side of the support tray 15 is connected to the downstream area 187 via the buffer space 186 . That is, the exhaust flow path 18 on the lower surface of the support tray 15 has the following three areas: ‧The upstream area 185 is formed between the lower surface of the support tray 15 and the upper surface of the second member 12; ‧Downstream region 187, which is connected to the fluid discharge part 55; and ‧The middle area (buffer space 186) connects the upstream area 185 and the downstream area 187. Among them, the upstream area 185 and the buffer space 186 are also set to a width larger than the diameter of the substrate S in the X direction (equivalent to the "first width" in the present invention), similarly to the upper side of the support tray 15 . In contrast, the width of the downstream region 187 in the X direction (corresponding to the "second width" in the present invention) is significantly reduced. Therefore, in order to prevent the above-mentioned backflow, in this embodiment, a part of the second member 12 (the partition wall 122 described later) is extended in the buffer space 186, and the left end is processed into a concave and convex shape, so as to exert the advantages of the present invention. The function of "rectification department". Furthermore, these characteristics will be described in detail later.

The processing fluid flowing above the support tray 15 in the processing space SP is sent toward the output port 104 through the upstream area 181 , the buffer space 182 and the downstream area 183 . The output port 104 is connected to the fluid discharge part 55 through a pipe 551, and a valve 552 is inserted in the middle of the pipe 551.

Similarly, the processing fluid flowing under the support tray 15 in the processing space SP is sent toward the output port 105 through the upstream area 185 , the buffer space 186 and the downstream area 187 . The output port 105 is connected to the fluid discharge part 55 through a pipe 553, and a valve 554 is inserted in the middle of the pipe 553.

Valves 552, 554 are controlled by control unit 90. When the valves 552 and 554 are opened based on the control command from the control unit 90 , the processing fluid in the processing space SP is recovered by the fluid discharge part 55 through the pipes 551 and 553 .

Next, the structure and operation of the rectifier will be described with reference to FIGS. 3A, 3B, 4, 5A and 5B. 3A and 3B are diagrams illustrating the structure around the opening of the processing chamber and the rectifying portion. More specifically, FIG. 3A is an external view showing the opening 101 of the processing chamber 100 . In addition, in FIG. 3B , in order to more easily display the internal structure of the processing chamber 100 , the illustration of the boundary line of the sealing member 16 , the first member 11 and the second member 12 is omitted from FIG. 3A , and is replaced by a hidden Line (dashed line) to show the structure hidden in Figure 3A.

As shown in these figures, an annular sealing member 16 is installed on the (-Y) side end surface of the processing chamber 100 , and an opening 101 is provided in an internal area surrounded by the sealing member 16 . More specifically, recessed portions 111 and 121 whose surfaces retreat toward the (+Y) side are provided on the (-Y) side end surfaces of the first member 11 and the second member 12 constituting the processing chamber 100 . Furthermore, a flange-shaped partition wall 112 is provided at the lower end of the recess 111 of the first member 11 to protrude in the (-Y) direction. The width of the partition wall 112 in the X direction is the same as or slightly larger than the width of the processing space SP. And it is thinner in the up and down direction (Z direction).

The partition wall 112 is the (-Y) side lower end of the first member 11 that is opposite to the support tray 15 and extends in the (-Y) direction. As shown in FIG. 4 , it partially separates the upstream area 181 and the buffer space 182 . Therefore, the processing fluid (dashed line) flowing through the upstream region 181 passes through the (-Y) side of the partition wall 112 , further changes direction in the (+Z) direction, and flows into the buffer space 182 . In addition, in this embodiment, two notches 112a are provided in the partition wall 112 substantially at the center in the X direction. Thereby, the partition wall 112 is processed into a concave and convex shape to increase the flow rate of the processing fluid in the center portion in the X direction, while suppressing the flow rate of the processing fluid in both end portions in the X direction. That is, the partition wall 112 having the concave and convex portions can function as the "rectifying portion" of the present invention.

In addition, a flange-shaped partition wall 122 is also provided at the upper end of the recess 121 of the second member 12 so as to protrude in the (-Y) direction. The width of the partition wall 122 in the X direction is the same as the width of the processing space SP or Slightly larger and thinner in the up and down direction (Z direction).

The partition wall 122 is the (-Y) side upper end of the second member 12 that is opposite to the support tray 15 and extends in the (-Y) direction, partially separating the upstream area 185 and the buffer space 186 . Therefore, the processing fluid flowing through the upstream region 185 passes through the (-Y) side of the partition wall 122 , further changes direction in the (-Z) direction, and flows into the buffer space 186 . In addition, in this embodiment, as shown in FIGS. 3A and 3B , two notch portions 122 a are provided in the partition wall 122 substantially at the center in the X direction. Thereby, the partition wall 122 is processed into a concave and convex shape to increase the flow rate of the processing fluid at the center portion in the X direction, while suppressing the flow rate at both ends of the processing fluid in the X direction. That is, the partition wall 122 having the concave and convex portions can function as the "rectifying part" of the present invention, just like the partition wall 112 .

The upper space above the partition wall 112 functions as a buffer space 182 by blocking its (-Y) side opening with the cover member 14 . In addition, the lower space below the partition wall 122 functions as a buffer space 186 by blocking its (-Y) side opening with the cover member 14 . The downstream areas 183 and 183 are connected to the upper surface of the recessed portion 111 and near both ends in the X direction. The downstream areas 183 and 183 are connected to the output ports 104 and 104 provided on the first component 11 . In addition, downstream areas 187 and 187 are connected below the recess 121 and near both ends in the X direction. The downstream areas 187 and 187 are connected to the output ports 105 and 105 provided below the second member 12 . Furthermore, a fluid discharge part 55 is connected to the output ports 104, 104, 105, and 105 to recover the processing fluid.

In this way, in the first embodiment, it is necessary to configure the upstream regions 181 and 185 on the inlet side of the exhaust flow path 18 so that the treated fluid can flow into a wide range in the X direction. The outlet side of the path 18, that is, the downstream areas 183 and 187 allow the treatment fluid to flow out in a narrow range in the X direction. Therefore, although there is concern about the above-mentioned problems, in the first embodiment, since the partition walls 112 and 122 that function as rectifiers are provided, the exhaust gas balance in the exhaust gas flow path 18 can be adjusted favorably. This feature will be described with reference to Fig. 4, Fig. 5A, and Fig. 5B.

FIG. 5A is a cross-sectional view schematically showing the flow of treatment fluid near the notch portion of the partition wall. In addition, FIG. 5B is a cross-sectional view schematically showing the flow of the processing fluid near the X-direction end of the partition wall. As shown in FIG. 4 , near the notch portions 112 a and 122 a of the partition walls 112 and 122 , the partition walls 112 and 122 retreat toward the (+Y) side, which corresponds to a concave portion. On the other hand, in the parts other than the cutout parts 112a and 122a, the partition walls 112 and 122 protrude toward the processing fluid flowing into the buffer space 186 from the upstream region 185, and they correspond to convex parts. Therefore, as shown in FIGS. 4 and 5A , the processing fluid flows from the upstream region 185 into the buffer space 186 at a larger flow rate in the center portion away from the downstream regions 183 and 187 in the X direction, and flows toward both ends in the X direction. On the other hand, at both end portions in the X direction, as shown in FIGS. 4 and 5B , the flow rate of the processing fluid flowing into the buffer space 186 from the upstream region 185 is suppressed compared to the central portion.

As described above, according to the first embodiment, the downstream regions 183 and 187 in the exhaust flow path 18 are provided at both ends in the X direction, and the recessed portions and the convex portions are provided in the partition walls 112 and 122. The partition walls 112 and 122 function as a rectifying unit. That is, when the processed processing fluid is discharged by the fluid discharge part 55, it rectifies the processing fluid flowing into the rectification position RP (FIG. 2B, FIG. 4) in which the partition walls 112 and 122 are provided in the exhaust flow path 18. Thereby, the balance between the flow of the processing fluid relative to the rectification position RP on the side of the processing space SP and the flow of the processing fluid relative to the rectification position RP on the side of the fluid discharge part can be adjusted. That is, it can ensure the balance of the exhaust gas in the exhaust gas flow path 18 . As a result, it can effectively prevent the processed processing fluid from flowing back toward the processing space SP and contaminating the substrate S.

6 is a diagram illustrating the structure around the opening and the rectifying portion of the processing chamber of the second embodiment of the substrate processing apparatus of the present invention. In addition, in FIG. 6 and its description, structures having substantially the same functions as those shown in FIGS. 3A and 3B are given the same reference numerals, and detailed descriptions thereof are omitted.

The biggest difference between the second embodiment and the first embodiment lies in the structure of the rectifying part. That is, in the first embodiment, a part of the first member 11 (the partition wall 112) and a part of the second member 12 (the partition wall 122) function as the "rectifying part" of the present invention. On the other hand, in the second embodiment, the independent partition wall rectifying members 191 and 192 are detachable from the first member 11 and the second member 12 respectively.

As shown in FIG. 6 , the partition wall rectifying member 191 is an angular member having a substantially L-shaped cross section. Two notch portions 191a, 191a are provided at the center portion in the width direction of the wing portion extending in the (-Y) direction among the two wing portions constituting the partition wall rectifying member 191. Furthermore, the other wing portion is fixed to the first member 11 by the fixing screw 113a while being in close contact with the recess 101a of the first member 11. Thereby, the partition wall rectifying member 191 performs the partition wall function and the rectifying function similarly to the partition wall 112 of the first embodiment. In addition, similarly, the partition wall rectifying member 192 is fixedly connected to the lower part of the opening 101b by the fixing screw 123a, so that the partition wall function can be exerted. At the same time, the partition wall rectifying member 192 having two notch portions 192a, 192a provided in the center portion in the width direction is used to perform the rectifying function.

As described above, in the second embodiment, since the partition wall rectifying members 191 and 192 are detachable, the partition wall rectifying members 191 and 192 corresponding to the type of substrate S, processing conditions, etc. can be used. For example, a plurality of partition wall rectifying members 191 and 192 having different numbers, shapes, sizes, etc. of the notch portions 191a and 192a may be prepared in advance. Then, partition wall rectifying members 191 and 192 that are suitable for the type of substrate S, processing conditions, etc. can be selected from among them and installed in the processing chamber 100 . This makes it possible to cope with various substrates S, processing conditions, etc., thereby improving the versatility of the substrate processing apparatus 1 .

As described above, in the first embodiment and the second embodiment, the function of the "container body" of the present invention is mainly exerted by the processing chamber 100 composed of the first to third members 11 to 13. In addition, the cover member 14 corresponds to an example of the "cover part" of this invention. Furthermore, the processing chamber 100 and the cover member 14 constitute the "processing container" of the present invention. In addition, the opening 101 corresponds to the "opening" in the present invention. In addition, the Y direction, X direction and Z direction are respectively equivalent to the "first direction", "second direction" and "third direction" in the present invention.

In addition, in the first embodiment and the second embodiment, the peripheral areas of the output ports 104 and 105 are strongly exhausted by the fluid discharge part 55, and the (+X) direction side in the exhaust flow path 18 and The end range on the (-X) direction side is equivalent to an example of the "strong exhaust range" of the present invention. On the other hand, the central range in the X direction away from the output ports 104 and 105 is equivalent to an example of the "weak exhaust range" of the present invention.

In addition, the present invention is not limited to the above-described embodiments, and various changes other than the above-described embodiments can be made as long as the scope of the invention does not exceed the essential content. For example, in the substrate processing apparatus 1 of the above-mentioned embodiment, the two output ports 104 and 104 (105, 105) are separated in the X direction, and the above-mentioned central range becomes a weak exhaust range. Therefore, the notch portions 112a, 122a, 191a, and 192a are provided at the center in the X direction. However, the arrangement position of the notch is not limited to this and can be selected arbitrarily. For example, as shown in FIG. 7A , when the output ports 104 and 105 are provided only on the (-X) direction side, the notch portions 112a and 122a (191a and 192a) may also be provided on the (+X) direction side (third implementation form). On the contrary, as shown in FIG. 7B , when the output ports 104 and 105 are provided only on the (+X) direction side, the notch portions 112a and 122a (191a and 192a) can also be provided on the (-X) direction side (section 191a and 192a). Four implementation forms).

In addition, in the above embodiment, the partition wall 112 (121) or the partition wall rectifying member 191 (192) is provided between the upstream area 181 (185) constituting the exhaust flow path 18 and the buffer space 182 (186). However, in this embodiment, The applicable objects of the invention are not limited thereto. For example, the present invention can also be applied to the substrate processing apparatus shown in FIGS. 8A, 8B, 9A and 9B.

8A is a top view of the processing fluid flow path of the fifth embodiment of the substrate processing apparatus of the present invention. In addition, FIG. 8B is a perspective view showing an example of the rectifying unit used in the fifth embodiment. In addition, FIG. 9A is a cross-sectional view schematically showing the flow of the processing fluid near the center portion in the width direction. Moreover, FIG. 9B is a cross-sectional view schematically showing the flow of the processing fluid near the end in the width direction. In the fifth embodiment, as shown in FIGS. 9A and 9B , no partition walls or partition rectifying members are provided, and the processing fluid flowing in the (-Y) direction from the processing space SP flows directly into the buffer through the upstream regions 181 and 185 Space182. On the other hand, in the fifth embodiment, the rectifying portion 20 is installed on the lower surface of the first member 11 so that the concave and convex surface (lower surface) of the rectifying portion 20 faces the upstream area 181 as shown in FIG. 8B . Furthermore, the upstream area 185 is also configured in the same manner. That is, the rectifying part 21 having the same structure as the rectifying part 20 is mounted on the upper surface of the second member 12 so that its concave and convex surface (upper surface) faces the upstream area 185 .

As shown in FIGS. 8A and 8B , the rectifying portions 20 and 21 have a plate shape extending in the X direction. The rectifying part 20 has an uneven shape with notches 201 and 201 formed in the center of the lower surface, and rectifies the processing fluid flowing from the upstream area 181 into the buffer space 182 at the outlet position of the upstream area 181 (rectifying position RP). In addition, the rectifying part 21 has an uneven shape with notches 211 and 211 formed in the center part of the upper surface, and rectifies the processing fluid flowing from the upstream area 185 into the buffer space 186 at the exit position of the upstream area 185 (rectifying position RP). Therefore, the same functions and effects as those of the above embodiment can be obtained.

In addition, in the above-described embodiment, the present invention is applicable to a case where the output ports 104 and 105 are provided on both sides of the X direction, only on the (+X) direction side, and only on the (-X) direction side. However, the present invention can also be applied to a device in which the output ports 104 and 105 are provided at the center in the X direction. For example, as shown in FIG. 10 , when the output ports 104 and 105 are provided at the center in the X direction, it is preferable to separately provide notch portions 112 a , 122 a , 191 a , and 192 a at both ends in the X direction (sixth embodiment). form). In the sixth embodiment, if the output ports 104 and 105 are provided at the center in the X direction, the center range in the X direction corresponds to the "strong exhaust range" of the present invention, and the end range corresponds to the "weak exhaust range" Scope". Therefore, by providing the notch portions 112a, 122a, 191a, and 192a, the treatment fluid flows into the buffer space from the upstream region at a larger flow rate in the end range. On the other hand, in the central range, since there are no cutouts in the partition walls 112 and 122, the flow rate of the processing fluid flowing into the buffer space from the upstream range is suppressed compared to the end portions. In this way, the partition walls 112 and 122 having concave and convex portions formed in the notch portions 112a, 122a, 191a, and 192a at the end portions can function as the "rectifying portion" of the present invention.

In addition, in the above-described embodiment, the inlet side (processing space SP side) of the exhaust flow path 18 is opened in a slit shape extending in the X direction, which can effectively take in the processing fluid flowing through the processing space SP. However, the structure of the exhaust flow path 18 on the inlet side is not limited to this. The present invention can be applied to a substrate processing device having an exhaust flow path. The exhaust flow path is arranged along the X direction, for example. A punched plate with a plurality of through holes is formed to take in the processing fluid. That is, the present invention is also applicable to the devices described in Japanese Patent Application Laid-Open Nos. 2018-082043, 2013-033963, 2017-157745, and 2019-091772, and it is possible to obtain the same The above embodiments have the same functions and effects.

In addition, in the above-described embodiment, the exhaust flow path 18 is composed of three types of areas, namely, an upstream area, an intermediate area (buffer space), and a downstream area. However, the present invention is applicable to a substrate processing apparatus in which the exhaust flow path 18 is composed of an upstream region and a downstream region.

In addition, various chemical substances used in the treatment of the above-mentioned embodiments are only some examples, and various other substances may be used instead as long as they comply with the technical idea of the present invention.

Although the invention has been described above based on specific embodiments, the above description is not intended to be interpreted in a restrictive manner. Obviously, those with ordinary knowledge in the technical field should be able to easily understand various modifications of the embodiments of the present invention as well as other embodiments of the present invention by referring to the description of the present invention. Therefore, within the scope that does not exceed the scope of the essential content of the present invention, the patentable scope of the present invention should include such modifications or embodiments.

The present invention can be widely applied to substrate processing technology that uses a processing fluid to process a substrate in a processing container. In particular, it is applicable to a process using a high-pressure fluid, such as a substrate drying process in which a semiconductor substrate or the like is dried using a supercritical fluid.

1:Substrate processing device 10: Processing unit 11:First component 12:Second component 13:Third component 14: cover member 15: Support pallet 16:Sealing components 18:Exhaust flow path 20, 21: Rectification Department 50: Supply unit 53: Advance and retreat mechanism 55: Fluid discharge part 57: Fluid supply department 80:Control unit 91:CPU 92:Memory 93:Storage 94:Interface 100: Processing chamber (container body) 101:Opening part 102, 103: Input port 104, 105: Output port 112, 122: Next door (rectification part) 112a, 122a: Notch part 113a, 123a: Fixing screws 151:Above 152: concave part 171:Flow path 172:Buffer space 173:Flow path 174:Spit out 175:Flow path 176: Buffer space 177:Flow path 178:Spit out 181, 185: upstream area 182, 186: Buffer space (middle area) 183, 187: Downstream area 191, 192: Bulkhead rectification component (rectification part) 191a, 192a: Notch part 551, 571: Piping 552, 572, 573: valve RP: rectification position S:Substrate SP: processing space Sa:Substrate surface X: second direction Y: first direction Z: third direction

FIG. 1 is a diagram showing the schematic structure of the first embodiment of the substrate processing apparatus of the present invention. FIG. 2A is a schematic diagram showing the flow path outline of the treatment fluid. FIG. 2B is a top view of the flow path of the treatment fluid. FIG. 3A is a diagram illustrating the structure around the opening of the processing chamber and the rectifying portion. 3B is a diagram illustrating the structure around the opening of the processing chamber and the rectifying portion. FIG. 4 is a diagram schematically showing the flow of the processing fluid around the opening of the processing chamber. FIG. 5A is a cross-sectional view schematically showing the flow of the treatment fluid near the gap portion of the partition wall. FIG. 5B is a cross-sectional view schematically showing the flow of the treatment fluid near the X-direction end of the partition wall. 6 is a diagram illustrating the structure around the opening of the processing chamber and the rectifying portion of the second embodiment of the substrate processing apparatus of the present invention. 7A is a diagram illustrating the structure around the opening of the processing chamber and the rectifying portion of the third embodiment of the substrate processing apparatus of the present invention. 7B is a diagram illustrating the structure around the opening of the processing chamber and the rectifying portion of the fourth embodiment of the substrate processing apparatus of the present invention. 8A is a top view of the processing fluid flow path of the fifth embodiment of the substrate processing apparatus of the present invention. FIG. 8B is a perspective view showing an example of the rectifying unit used in the fifth embodiment. FIG. 9A is a cross-sectional view schematically showing the flow of the processing fluid near the center portion in the width direction. FIG. 9B is a cross-sectional view schematically showing the flow of the treatment fluid near the width direction end. 10 is a diagram illustrating the structure around the opening of the processing chamber and the rectifying portion of the substrate processing apparatus according to the sixth embodiment of the present invention.

16:Sealing components

18:Exhaust flow path

104:Output port

112:next door

112a: Notch part

181:Upstream area

182: Buffer space

183: Downstream area

RP: rectification position

X: second direction

Y: first direction

Z: third direction

Claims (6)

A substrate processing apparatus, characterized in that it is provided with: a processing container that accommodates a substrate in a processing space; a fluid supply unit that supplies a processing fluid for supercritical processing into the processing space; and a fluid discharge unit that passes through The exhaust flow path formed in the above-mentioned processing container and communicating with the above-mentioned processing space discharges the above-mentioned processing fluid from the above-mentioned processing space; and a rectification part is provided at the rectification position of the above-mentioned exhaust flow path; the above-mentioned rectification part serves as When the processing fluid is discharged through the fluid discharge portion, the processing fluid flowing into the rectification position is rectified, thereby adjusting the flow of the processing fluid on the side of the processing space relative to the rectification position and the flow of the processing fluid in the fluid discharge portion. In order to balance the flow of the processing fluid with respect to the rectification position, the exhaust flow path is provided with: an upstream region that is provided across the first width in a second direction, and the second direction is connected to the processing fluid. The first direction of flow from the above-mentioned processing space to the above-mentioned exhaust flow path is orthogonal; and a downstream area has a second width narrower than the above-mentioned first width in the above-mentioned second direction and is connected to the above-mentioned fluid discharge part The processing fluid flowing in through the upstream region flows to the fluid discharge part; the rectifying part is used to adjust the flow rate of the processing fluid in the strong exhaust range corresponding to the downstream region in the second direction to the flow rate in the strong exhaust range. The second direction and the area other than the downstream area correspond to the difference in the flow rate of the processing fluid in the weak exhaust range, and the rectifying unit is responsible for flow adjustment, and the flow adjustment suppresses the flow rate of the processing fluid in the strong exhaust range, On the other hand, improving the performance of the processing fluid in the weak exhaust range flow. The substrate processing apparatus of claim 1, wherein the rectifying portion extends along the second direction and has a convex portion and a concave portion; the convex portion is arranged to face the exhaust gas along the exhaust gas range in the strong exhaust range. The processing fluid flowing through the flow path has a protruding shape; and the recessed portion is configured to recede from the processing fluid flowing along the exhaust flow path in the weak exhaust range. The substrate processing apparatus of claim 1, wherein the exhaust flow path further has an intermediate area, the intermediate area is provided between the upstream area and the downstream area, and allows flow along the first direction to the upstream. The flow direction of the processing fluid in the area changes toward a third direction orthogonal to both the first direction and the second direction, and is guided toward the downstream area; the rectifying portion is between the upstream area and the above-mentioned The above-mentioned treatment fluid is rectified between the intermediate areas. The substrate processing apparatus of claim 1, wherein the rectifying unit rectifies the processing fluid in the upstream region. The substrate processing apparatus according to any one of claims 1 to 4, further comprising a support tray that can support the substrate and be stored in the processing space; the processing container has a container body and a lid; The container system is provided with the above-mentioned processing space and an opening connected to the above-mentioned processing space and used for the above-mentioned support tray to pass; the cover part can block the above-mentioned opening; the above-mentioned upstream area is used to move the above-mentioned support tray from the above-mentioned first direction to be stored in the container body mentioned above The above-mentioned processing space is formed between the above-mentioned container body and the above-mentioned support tray; the above-mentioned rectifying part is provided at the end of the above-mentioned container body opposite to the above-mentioned support tray and on the side of the first direction. A substrate processing method, characterized in that it includes the following steps: a supply step of supplying a processing fluid for supercritical processing to a processing space of a processing container to perform supercritical processing on the substrate accommodated in the processing space; and discharging. a step of discharging the processing fluid from the processing space through a fluid discharge portion through an exhaust flow path formed in communication with the processing space in the processing container; in the discharging step, the rectifying portion is provided in the discharge The rectifying position of the air flow path rectifies the processing fluid flowing into the rectifying position, thereby adjusting the flow of the processing fluid on the side of the processing space relative to the rectifying position and the above-mentioned processing on the side of the fluid discharge part. To balance the flow of the fluid with respect to the rectification position, the exhaust flow path is provided with an upstream region that is provided across the first width in a second direction, and the second direction is connected with the flow of the processing fluid from the processing space. The first direction of flow toward the exhaust flow path is orthogonal; and a downstream area has a second width in the second direction that is narrower than the first width and is connected to the fluid discharge portion so that the fluid discharge portion passes through the The processing fluid flowing into the upstream region flows to the fluid discharge part; the rectifying part is used to make the flow rate of the processing fluid in the strong exhaust range corresponding to the downstream region in the second direction and the flow rate in the second direction Different from the flow rate of the processing fluid in the weak exhaust range corresponding to the area other than the downstream area, the rectifying part is responsible for flow adjustment, and the flow adjustment is to suppress the flow rate of the processing fluid in the above-mentioned The flow rate in the strong exhaust range, on the other hand, increases the flow rate of the processing fluid in the weak exhaust range.