TWI813867B - Transparent Conductive Film - Google Patents
Transparent Conductive Film Download PDFInfo
- Publication number
- TWI813867B TWI813867B TW109110379A TW109110379A TWI813867B TW I813867 B TWI813867 B TW I813867B TW 109110379 A TW109110379 A TW 109110379A TW 109110379 A TW109110379 A TW 109110379A TW I813867 B TWI813867 B TW I813867B
- Authority
- TW
- Taiwan
- Prior art keywords
- transparent conductive
- conductive film
- pen
- film
- indium
- Prior art date
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- 239000002131 composite material Substances 0.000 claims abstract description 60
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims abstract description 59
- 238000012360 testing method Methods 0.000 claims abstract description 59
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- 239000002985 plastic film Substances 0.000 claims abstract description 28
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- 238000004544 sputter deposition Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 24
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 23
- 229910001887 tin oxide Inorganic materials 0.000 claims description 23
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Non-Insulated Conductors (AREA)
- Position Input By Displaying (AREA)
- Laminated Bodies (AREA)
Abstract
本發明提供一種透明導電性膜片,係用於觸控面板時之筆滑動耐久性及筆重加壓耐久性優異。本發明之透明導電性膜片係於透明塑膠膜片基材上的至少其中一面積層有銦-錫複合氧化物之透明導電性膜,並且,由筆滑動耐久性試驗所得之透明導電性膜片的透明導電性膜之接通(ON)電阻為10kΩ以下,進而由筆重加壓試驗所得之透明導電性膜片的透明導電性膜之表面電阻值之增加率為1.5以下。The present invention provides a transparent conductive film that is excellent in pen sliding durability and pen heavy pressure durability when used in a touch panel. The transparent conductive film of the present invention is a transparent conductive film with an indium-tin composite oxide layered on at least one area of a transparent plastic film base material, and is a transparent conductive film obtained by a pen sliding durability test The ON resistance of the transparent conductive film is 10 kΩ or less, and the increase rate of the surface resistance value of the transparent conductive film obtained from the pen weight test is 1.5 or less.
Description
本發明係關於一種於透明塑膠膜片基材上積層有結晶性之銦-錫複合氧化物之透明導電性膜而成的透明導電性膜片,尤其係關於一種用於電阻膜式觸控面板時之筆滑動耐久性及筆重加壓耐久性優異之透明導電性膜片。 The present invention relates to a transparent conductive film formed by laminating a transparent conductive film of crystalline indium-tin composite oxide on a transparent plastic film base material. In particular, it relates to a resistive film touch panel. A transparent conductive diaphragm with excellent pen sliding durability and heavy pressure durability.
於透明塑膠基材上積層有透明且電阻小之薄膜而成的透明導電性膜片係被廣泛地用於利用該透明導電性膜所具導電性的用途,例如作為液晶顯示器或EL(Electroluminescent;電致發光)顯示器等這種平板顯示器、或觸控面板之透明電極等而廣泛地用於電氣、電子領域之用途。 A transparent conductive film formed by laminating a transparent and low-resistance thin film on a transparent plastic base material is widely used in applications that utilize the conductivity of the transparent conductive film, such as liquid crystal displays or EL (Electroluminescent; They are widely used in electrical and electronic fields such as flat panel displays such as electroluminescent displays or transparent electrodes of touch panels.
電阻膜式觸控面板係將於玻璃或塑膠之基板塗佈有透明導電性薄膜的固定電極與於塑膠膜片塗佈有透明導電性薄膜的可動電極(亦即膜片電極)組合而成,係疊合於顯示體的上側來使用。以手指或筆來按壓膜片電極,使固定電極與膜片電極之透明導性薄膜彼此接觸,成為用於識別觸控面板的位置之輸入。相較於手指,大多情況下筆對觸控面板施加之力較強。若以筆對觸控面板持續進行輸入,則有時膜片電極側的透明導電性薄膜產生龜裂、剝離、磨耗等破壞。另外,若以筆強烈敲擊觸控面板,或以非常強的力用筆進行輸入等,對觸控面板施加超過通常預想會使用之強力道,則有時透明導電性薄膜產生龜裂、剝離等破壞。為了解決這些問題,期望兼具優異之筆滑動耐久性與優異之筆重加壓耐久性的透明導電性膜片。 Resistive film touch panels are composed of a fixed electrode coated with a transparent conductive film on a glass or plastic substrate and a movable electrode (also known as a diaphragm electrode) coated with a transparent conductive film on a plastic film. It is used by superimposing it on the upper side of the display body. Pressing the diaphragm electrode with a finger or a pen makes the fixed electrode and the transparent conductive film of the diaphragm electrode contact each other, which becomes an input for identifying the position of the touch panel. Compared with fingers, pens exert stronger force on touch panels in most cases. If input is continued on the touch panel with a pen, the transparent conductive film on the diaphragm electrode side may be damaged such as cracking, peeling, or abrasion. In addition, if a force exceeding the normal expected use is applied to the touch panel, such as strongly tapping the touch panel with a pen or inputting with a very strong force, the transparent conductive film may crack or peel. Waiting for destruction. In order to solve these problems, a transparent conductive film having both excellent pen sliding durability and excellent pen heavy pressure durability is desired.
作為提高筆滑動耐久性之方法,有將膜片電極側之透明導電性薄膜作成結晶性之方法(例如參照專利文獻1)。然而,以往之透明導電性膜片係藉由控制銦-錫複合氧化物之結晶性,而實現筆滑動耐久性優異之透明導電性膜片。然而,以往之透明導電性膜片若實施後述之筆重加壓耐久性試驗,則筆重加壓耐久性不充分。 As a method of improving the pen sliding durability, there is a method of making the transparent conductive film on the diaphragm electrode side crystalline (see, for example, Patent Document 1). However, conventional transparent conductive films have achieved a transparent conductive film with excellent pen sliding durability by controlling the crystallinity of indium-tin composite oxide. However, if the conventional transparent conductive film is subjected to the pen weight pressure durability test described below, the pen weight pressure durability is insufficient.
[先前技術文獻] [Prior technical literature]
[專利文獻] [Patent Document]
[專利文獻1]日本特開2004-071171號公報。 [Patent Document 1] Japanese Patent Application Publication No. 2004-071171.
鑒於上述以往之問題點,本發明之目的在於提供一種透明導電性膜片,係用於觸控面板時之筆滑動耐久性優異,並且筆重加壓耐久性亦優異。 In view of the above-mentioned conventional problems, an object of the present invention is to provide a transparent conductive film that is excellent in pen sliding durability when used in a touch panel and is also excellent in pen heavy pressure durability.
本發明係鑒於如上所述之狀況而成,能夠解決上述課題的本發明之透明導電性膜係由以下之構成所構成。 The present invention was made in view of the above-described situation, and the transparent conductive film of the present invention that can solve the above-mentioned problems has the following structure.
1.一種透明導電性膜片,係於透明塑膠膜片基材上的至少其中一面積層有銦-錫複合氧化物之透明導電性膜而成,並且,由以下之筆滑動耐久性試驗所得之透明導電性膜片的透明導電性膜之接通(ON)電阻為10kΩ以下,進而由以下之筆重加壓試驗所得之透明導電性膜片的透明導電性膜之表面電阻值之增加率為1.5以下。 1. A transparent conductive film, which is formed by layering a transparent conductive film of indium-tin composite oxide on at least one area of a transparent plastic film base material, and is obtained by the following pen sliding durability test The ON resistance of the transparent conductive film of the transparent conductive film is 10 kΩ or less, and the increase rate of the surface resistance value of the transparent conductive film of the transparent conductive film is obtained from the following pen load test. 1.5 or less.
[筆滑動耐久性試驗方法] [Pen sliding durability test method]
使用本發明之透明導電性膜片作為其中一個面板用板,且使用在玻璃基板上以濺鍍法形成有由厚度為20nm之銦-錫複合氧化物薄膜(氧化錫含量:10質量%)所構成之透明導電性薄膜作為另一個面板用板。將前述兩片面板用板以透明導電性薄膜呈互相對向之方式介由直徑30μm之環氧珠進行配置,以厚度為170μm之雙面膠帶來貼附膜片側之面板用板與玻璃側之面板用板,而製作觸控面板。繼而,對聚縮醛製之筆(頂端之形狀:0.8mmR)施加2.5N之荷重,對觸控面板進行來回18萬次之直線滑動試驗。於該試驗中,對本發明之透明導電性膜片面施加筆之荷重。 The transparent conductive film of the present invention is used as one of the panel plates, and an indium-tin composite oxide film (tin oxide content: 10 mass%) with a thickness of 20 nm is formed on a glass substrate by a sputtering method. The transparent conductive film is used as another panel board. The aforementioned two panel plates are arranged with transparent conductive films facing each other through epoxy beads with a diameter of 30 μm, and a double-sided tape with a thickness of 170 μm is used to attach the panel plate on the film side to the glass side. Panel boards are used to make touch panels. Then, a load of 2.5N was applied to the pen made of polyacetal (top shape: 0.8mmR), and the touch panel was subjected to a linear sliding test of 180,000 back and forth times. In this test, a pen load was applied to the surface of the transparent conductive film of the present invention.
此時之滑動距離設為30mm,滑動速度設為180mm/s。於該滑動耐久性試驗後,測定以筆荷重0.8N按壓滑動部時之接通電阻(可動電極(膜片電極)與固定電極接觸時之電阻值)。 At this time, the sliding distance is set to 30mm and the sliding speed is set to 180mm/s. After the sliding durability test, the on-resistance (the resistance value when the movable electrode (diaphragm electrode) comes into contact with the fixed electrode) is measured when the sliding part is pressed with a pen load of 0.8N.
[筆重加壓試驗方法] [Pen weight and pressure test method]
使用經切割為50mm×50mm的本發明之透明導電性膜片作為其中一個面板用板,且使用在玻璃基板上以濺鍍法形成有由厚度為20nm之銦-錫複合氧化物薄膜(氧化錫含量:10質量%)所構成之透明導電性薄膜作為另一個面板用板。將該兩片面板用板以透明導電性薄膜呈互相對向之方式介由直徑30μm之環氧珠進行配置,以厚度經調整而成為120μm之雙面膠帶來貼附膜片側之面板用板與玻璃側之面板用板,而製作觸控面板。以聚縮醛製之筆(頂端的形狀0.8mmR)於距雙面膠帶的一端2.0mm之位置施加35N之荷重,平行於雙面膠帶實施10次(來回5次)直線滑動。於該試驗中,對本發明之透明導電性膜片面施加筆之荷重。此時之滑動距離設為30mm,滑動速度設為20mm/s。於不存在環氧珠之位置進行滑動。於滑動後,取下透明導電性膜片,測定滑動部的任意五處之表面電阻(四 端子法),得出平均值。於測定表面電阻時,於與滑動部成垂直之方向排列四端子,使滑動部來到第二端子與第三端子之間。將滑動部之表面電阻值之平均值除以未滑動部之表面電阻值(利用四端子法測定),算出表面電阻值之增加率。 The transparent conductive film of the present invention cut into 50mm×50mm was used as one of the panel plates, and an indium-tin composite oxide film (tin oxide) with a thickness of 20nm was formed on the glass substrate by sputtering. A transparent conductive film composed of 10% by mass) was used as another panel board. The two panel plates are arranged facing each other with transparent conductive films through epoxy beads with a diameter of 30 μm, and a double-sided tape with a thickness adjusted to 120 μm is used to attach the panel plate on the diaphragm side to the panel plate. Use the panel on the glass side to make the touch panel. Use a polyacetal pen (top shape 0.8mmR) to apply a load of 35N at a position 2.0mm away from one end of the double-sided tape, and slide it linearly 10 times (5 times back and forth) parallel to the double-sided tape. In this test, a pen load was applied to the surface of the transparent conductive film of the present invention. At this time, the sliding distance is set to 30mm and the sliding speed is set to 20mm/s. Slide where there are no epoxy beads. After sliding, remove the transparent conductive film and measure the surface resistance (four) of any five places on the sliding part. Terminal method), get the average value. When measuring the surface resistance, arrange the four terminals in a direction perpendicular to the sliding part so that the sliding part comes between the second terminal and the third terminal. Divide the average surface resistance value of the sliding part by the surface resistance value of the unsliding part (measured by the four-terminal method) to calculate the increase rate of the surface resistance value.
2.如上述第1所記載之透明導電性膜片,其中銦-錫複合氧化物之透明導電性膜之晶粒徑為10nm至100nm,銦-錫複合氧化物之透明導電性膜之結晶度為20%至80%,銦-錫複合氧化物之透明導電性膜包含0.5質量%至10質量%之氧化錫,銦-錫複合氧化物之透明導電性膜之厚度為10nm至30nm,銦-錫複合氧化物之透明導電性膜之三維表面粗糙度SRa為1nm至100nm。
2. The transparent conductive film as described in
3.如上述第1或第2所記載之透明導電性膜片,即便於透明導電性膜的表面實施附著性試驗(JIS(Japanese Industrial Standards;日本工業標準)K5600-5-6:1999),透明導電性膜仍不剝離,於透明導電性膜片之銦-錫複合氧化物之透明導電性膜側進行耐彎曲性試驗(JIS K5600-5-1:1999),以10倍之放大鏡觀察彎曲部時發生破裂或剝落之心軸直徑小於20mm。 3. The transparent conductive film as described in the above 1 or 2, that is, the adhesion test (JIS (Japanese Industrial Standards; Japanese Industrial Standards) K5600-5-6: 1999) is performed on the surface of the transparent conductive film, The transparent conductive film still does not peel off. Conduct a bending resistance test (JIS K5600-5-1: 1999) on the transparent conductive film side of the indium-tin composite oxide of the transparent conductive film. Observe the bending with a 10x magnifying glass. The diameter of the mandrel when cracking or peeling occurs is less than 20mm.
4.如上述第1至第3中任一項所記載之透明導電性膜片,其中透明導電性膜片之厚度為100μm至250μm。
4. The transparent conductive film as described in any one of
5.如上述第1至第4中任一項所記載之透明導電性膜片,其中於銦-錫複合氧化物之透明導電性膜與透明塑膠膜片基材之間具有硬化型樹脂層。 5. The transparent conductive film according to any one of the above 1 to 4, wherein there is a curable resin layer between the transparent conductive film of the indium-tin composite oxide and the transparent plastic film base material.
根據本發明,能夠提供一種兼具優異之筆滑動耐久性及優異之筆重加壓耐久性的透明導電性膜片。所得之透明導電性膜片係於電阻膜式觸控面板等之用途中極為有用。 According to the present invention, it is possible to provide a transparent conductive film that has both excellent pen sliding durability and excellent pen heavy pressure durability. The obtained transparent conductive film is extremely useful in applications such as resistive film touch panels.
1:膜 1: membrane
2:中心輥 2: Center roller
3:煙道 3: flue
4:銦-錫複合氧化物之靶 4: Indium-tin composite oxide target
[圖1]係表示本發明中之晶粒的最長部之其中一例(例1)的示意圖。 [Fig. 1] is a schematic diagram showing one example (Example 1) of the longest portion of a crystal grain in the present invention.
[圖2]係表示本發明中之晶粒的最長部之另一例(例2)的示意圖。 [Fig. 2] is a schematic diagram showing another example (Example 2) of the longest portion of a crystal grain in the present invention.
[圖3]係表示本發明中之晶粒的最長部之另一例(例3)的示意圖。 [Fig. 3] is a schematic diagram showing another example (Example 3) of the longest portion of the crystal grain in the present invention.
[圖4]係表示本發明中之晶粒的最長部之另一例(例4)的示意圖。 [Fig. 4] is a schematic diagram showing another example (Example 4) of the longest portion of the crystal grain in the present invention.
[圖5]係用於說明本發明中可較佳地使用的濺鍍裝置之其中一例的中心輥之位置的示意圖。 [Fig. 5] is a schematic diagram for explaining the position of the center roller in one example of the sputtering device that can be preferably used in the present invention.
本發明之透明導電性膜片係於透明塑膠膜片基材上的至少其中一面積層有銦-錫複合氧化物之透明導電性膜而成,並且,由以下之筆滑動耐久性試驗所得之透明導電性膜片的透明導電性膜之接通電阻為10kΩ以下,進而由以下之筆重加壓試驗所得之透明導電性膜片的透明導電性膜之表面電阻值之增加率為1.5以下。 The transparent conductive film of the present invention is formed by layering a transparent conductive film of indium-tin composite oxide on at least one area of a transparent plastic film base material, and the transparency obtained by the following pen sliding durability test The on-resistance of the transparent conductive film of the conductive film is 10 kΩ or less, and the increase rate of the surface resistance value of the transparent conductive film of the transparent conductive film obtained from the following pen load test is 1.5 or less.
[筆滑動耐久性試驗] [Pen sliding durability test]
使用本發明之透明導電性膜片作為其中一個面板用板,且使用在玻璃基板上以濺鍍法形成有由厚度為20nm之銦-錫複合氧化物薄膜(氧化錫含量:10質量%)所構成之透明導電性薄膜作為另一個面板用板。將該兩片面板用板以透明導電性薄膜呈互相對向之方式介由直徑30μm之環氧珠進行配置,以厚度為170μm之雙面膠帶來貼附膜片側之面板用板與玻璃側之面板用板,而製作觸控面板。繼而,以聚縮醛製之筆(頂端之形狀:0.8mmR)施加2.5N之荷重,對觸控面板進行來回18萬次之直線滑動試驗。於該試驗中,對本發明之透明導電性膜片面施加筆之荷重。此時之滑動距離設為30mm,滑動速度設為180mm/s。於該滑動耐 久性試驗後,測定以筆荷重0.8N按壓滑動部時之接通電阻(可動電極(膜片電極)與固定電極接觸時之電阻值)。 The transparent conductive film of the present invention is used as one of the panel plates, and an indium-tin composite oxide film (tin oxide content: 10 mass%) with a thickness of 20 nm is formed on a glass substrate by a sputtering method. The transparent conductive film is used as another panel board. The two panel plates are arranged facing each other with transparent conductive films through epoxy beads with a diameter of 30 μm, and a double-sided tape with a thickness of 170 μm is used to attach the panel plate on the film side to the glass side. Panel boards are used to make touch panels. Then, a polyacetal pen (top shape: 0.8mmR) was used to apply a load of 2.5N, and the touch panel was subjected to a linear sliding test of 180,000 back and forth times. In this test, a pen load was applied to the surface of the transparent conductive film of the present invention. At this time, the sliding distance is set to 30mm and the sliding speed is set to 180mm/s. Resistant to this sliding After the durability test, the on-resistance (resistance value when the movable electrode (diaphragm electrode) is in contact with the fixed electrode) is measured when the sliding part is pressed with a pen load of 0.8N.
[筆重加壓試驗] [Pen weight pressure test]
使用將本發明之透明導電性膜片切割成50mm×50mm而得之透明導電性膜片作為其中一個面板用板,且使用在玻璃基板上以濺鍍法形成有由厚度為20nm之銦-錫複合氧化物薄膜(氧化錫含量:10質量%)所構成之透明導電性薄膜作為另一個面板用板。將該兩片面板用板以透明導電性薄膜呈互相對向之方式介由直徑30μm之環氧珠進行配置,以厚度經調整成為120μm之雙面膠帶來貼附膜片側之面板用板與玻璃側之面板用板,而製作觸控面板。以聚縮醛製之筆(頂端之形狀0.8mmR)於距雙面膠帶的一端2.0mm之位置施加35N之荷重,平行於雙面膠帶實施10次(來回5次)直線滑動。於該試驗中,對本發明之透明導電性膜片面施加筆之荷重。此時之滑動距離設為30mm,滑動速度設為20mm/s。其中,於不存在環氧珠之位置進行滑動。於滑動後,取下透明導電性膜片,測定滑動部的任意五處之表面電阻(四端子法),得出平均值。於測定表面電阻時,於與滑動部成垂直之方向排列四端子,使滑動部來到第二端子與第三端子之間。將滑動部之表面電阻值之平均值除以未滑動部之表面電阻值(利用四端子法測定),算出表面電阻值之增加率。 A transparent conductive film obtained by cutting the transparent conductive film of the present invention into 50 mm × 50 mm is used as one of the panel plates, and an indium-tin layer with a thickness of 20 nm is formed on a glass substrate by sputtering. A transparent conductive film composed of a composite oxide film (tin oxide content: 10% by mass) was used as another panel board. The two panel plates are arranged facing each other with transparent conductive films through epoxy beads with a diameter of 30 μm, and a double-sided tape with a thickness adjusted to 120 μm is used to attach the panel plate and glass on the film side The side panel uses a board to make a touch panel. Use a polyacetal pen (top shape 0.8mmR) to apply a load of 35N at a position 2.0mm away from one end of the double-sided tape, and slide it linearly 10 times (5 times back and forth) parallel to the double-sided tape. In this test, a pen load was applied to the surface of the transparent conductive film of the present invention. At this time, the sliding distance is set to 30mm and the sliding speed is set to 20mm/s. Among them, slide in the position where there are no epoxy beads. After sliding, remove the transparent conductive film, measure the surface resistance at any five places on the sliding part (four-terminal method), and obtain the average value. When measuring the surface resistance, arrange the four terminals in a direction perpendicular to the sliding part so that the sliding part comes between the second terminal and the third terminal. Divide the average surface resistance value of the sliding part by the surface resistance value of the unsliding part (measured by the four-terminal method) to calculate the increase rate of the surface resistance value.
本發明之透明導電性膜片係筆滑動耐久性與筆重加壓耐久性優異。筆滑動耐久性與筆重加壓耐久性係相悖之性質。首先說明筆滑動耐久性。筆滑動耐久性優異之銦-錫複合氧化物之透明導電性膜片需要透明導電性膜之結晶度高,晶粒徑大,進而透明導電性膜之三維表面粗糙度小。關於三維表面粗糙度,將於下文中說明,首先說明結晶度及晶粒徑。將於穿透式電子顯微鏡下 觀察到的具有圓狀或多邊形狀之區域的部分定義為透明導電性膜之結晶(亦即晶粒),將除此以外之部分定義為非晶。所謂結晶度高,表示結晶之比率高。所謂晶粒徑大,表示於穿透式電子顯微鏡下觀察到的圓狀或多邊形狀之區域大。結晶度高之透明導電性膜係硬的結晶之比率高,晶粒徑大之透明導電性膜係晶粒周圍之應變增大等,故透明導電性膜變硬,筆滑動耐久性優異。繼而說明筆重加壓耐久性。筆重加壓耐久性優異之銦-錫複合氧化物之透明導電性膜片係透明導電性膜之結晶度低,晶粒徑小。結晶度低之透明導電性膜係柔軟的非晶之比率高,晶粒徑小之透明導電性膜係晶粒周圍之應變減小等,故即便對透明導電性膜施加荷重亦不易產生龜裂等,筆重加壓耐久性優異。如上所述,得知筆滑動耐久性與筆重加壓耐久性為相悖之性質。研究的結果得出了下述發明:藉由控制透明導電性膜的結晶度及晶粒徑,而可兼具筆滑動耐久性與筆重加壓耐久性。對於具有兼具筆滑動耐久性與筆重加壓耐久性之透明導電性膜的透明導電性膜片進行說明。 The transparent conductive film of the present invention has excellent pen sliding durability and pen heavy pressure durability. Pen sliding durability and pen heavy pressure durability are in conflict with each other. First, the pen sliding durability will be explained. The transparent conductive film of indium-tin composite oxide with excellent pen sliding durability requires a high degree of crystallinity and a large grain size of the transparent conductive film, and the three-dimensional surface roughness of the transparent conductive film is small. The three-dimensional surface roughness will be explained below. First, the crystallinity and grain size will be explained. under a transmission electron microscope The observed portion having a circular or polygonal shape is defined as crystals (that is, crystal grains) of the transparent conductive film, and the other portions are defined as amorphous. The so-called high crystallinity means that the ratio of crystallization is high. The so-called large crystal grain size means a large circular or polygonal area observed under a transmission electron microscope. A transparent conductive film with a high degree of crystallinity has a high ratio of hard crystals, and a transparent conductive film with a large crystal grain size has an increased strain around the crystal grains, so the transparent conductive film becomes hard and has excellent pen sliding durability. This goes on to illustrate the durability of the pen under heavy pressure. The transparent conductive film of the indium-tin composite oxide that has excellent durability under heavy pressure is a transparent conductive film with low crystallinity and small grain size. A transparent conductive film with low crystallinity has a high ratio of soft amorphous materials, and a transparent conductive film with a small crystal grain size has reduced strain around the crystal grains, so even if a load is applied to the transparent conductive film, cracks are less likely to occur. etc., the pen has excellent durability under heavy pressure. As described above, it was found that the pen sliding durability and the pen heavy pressure durability have contradictory properties. As a result of the research, the following invention was reached: By controlling the crystallinity and grain size of the transparent conductive film, it is possible to achieve both pen sliding durability and pen heavy pressure durability. A transparent conductive film having a transparent conductive film that has both pen sliding durability and pen heavy pressure durability will be described.
於本發明中,若由筆滑動耐久性試驗所得之透明導電性膜片的透明導電性膜之接通電阻為10kΩ以下,則即便以筆對觸控面板進行連續輸入,透明導電性膜之龜裂、剝離、磨耗等仍受到抑制,故較佳。於其中一態樣中,接通電阻可為9.5kΩ以下,更佳為5kΩ以下。接通電阻例如可為3kΩ以下,可為1.5kΩ以下,較佳為1kΩ以下。接通電阻若為0kΩ,則筆滑動耐久性非常優異,若為本發明,則接通電阻亦可為0kΩ。接通電阻例如亦可為3kΩ以上,亦可為5kΩ以上。 In the present invention, if the on-resistance of the transparent conductive film of the transparent conductive film obtained by the pen sliding durability test is 10 kΩ or less, even if the pen is used for continuous input to the touch panel, the turtle of the transparent conductive film Cracks, peeling, wear, etc. are still suppressed, so it is better. In one aspect, the on-resistance can be below 9.5 kΩ, and more preferably below 5 kΩ. The on-resistance may be, for example, 3 kΩ or less, 1.5 kΩ or less, and preferably 1 kΩ or less. If the on-resistance is 0 kΩ, the pen sliding durability will be very excellent. According to the present invention, the on-resistance may be 0 kΩ. The on-resistance may be, for example, 3 kΩ or more, or 5 kΩ or more.
藉由接通電阻為此種範圍內,則即便以筆對觸控面板進行連續輸入,透明導電性膜之龜裂、剝離、磨耗等仍受到抑制。 When the on-resistance is within this range, even if continuous input is made to the touch panel with a pen, cracks, peeling, abrasion, etc. of the transparent conductive film are suppressed.
於其中一態樣中,亦可將這些上限及下限適當組合。 In one of the aspects, these upper and lower limits may also be appropriately combined.
於本發明中,較佳為由筆重加壓試驗所得之透明導電性膜片的透明導電性膜之表面電阻值之增加率為1.5以下。藉由具有此種特性,則例如即便施加預定通常使用以上之強力,透明導電性膜之龜裂、剝離等仍能夠受到抑制。更佳為表面電阻值之增加率為1.2以下,尤佳為1.0(不增大)。 In the present invention, it is preferable that the increase rate of the surface resistance value of the transparent conductive film of the transparent conductive film obtained by the pen heavy pressure test is 1.5 or less. By having such characteristics, for example, even if a strong force exceeding the intended normal use is applied, cracking, peeling, etc. of the transparent conductive film can be suppressed. More preferably, the increase rate of the surface resistance value is 1.2 or less, and particularly preferably 1.0 (no increase).
此處,本發明之透明導電性膜之表面電阻值之增加率較佳為1.0以上。 Here, the increase rate of the surface resistance value of the transparent conductive film of the present invention is preferably 1.0 or more.
於其中一態樣中,由筆滑動耐久性試驗所得之透明導電性膜片的透明導電性膜之接通電阻為0.05以上至9.5以下,並且,由筆重加壓(耐久性)試驗所得之透明導電性膜片的透明導電性膜之表面電阻值之增加率為1.0以上至1.5以下。 In one aspect, the on-resistance of the transparent conductive film of the transparent conductive film obtained by the pen sliding durability test is 0.05 or more and 9.5 or less, and the on-resistance of the transparent conductive film obtained by the pen heavy pressure (durability) test is The increase rate of the surface resistance value of the transparent conductive film of the transparent conductive film is 1.0 or more and 1.5 or less.
如上文所述,通常筆滑動耐久性與筆重加壓耐久性為相悖的性質。於本發明中,能夠於此種範圍內,以良好的平衡具有這些兩個耐久性。另外,即便以筆對觸控面板進行連續輸入,透明導電性膜之龜裂、剝離、磨耗等仍能夠受到抑制,而且針對由筆滑動、筆重加壓所致的負荷,亦能夠顯示優異之耐久性。再者,數值範圍可選擇本說明書中記載之範圍以及值。 As mentioned above, pen sliding durability and pen heavy pressure durability generally have conflicting properties. In the present invention, it is possible to have these two durability properties in a good balance within this range. In addition, even if the touch panel is continuously input with a pen, cracks, peeling, abrasion, etc. of the transparent conductive film can be suppressed, and excellent performance can be displayed against loads caused by pen sliding and heavy pen pressure. Durability. In addition, the range and value described in this specification can be selected as a numerical range.
本發明之透明導電性膜片較佳為即便於透明導電性膜面中實施附著性試驗(JIS K5600-5-6:1999),透明導電性膜亦不剝離。於附著性試驗中透明導電性膜不剝落之透明導電性膜片係透明導電性膜與透明塑膠基材或硬化型樹脂層等接觸透明導電性膜之層密接,故即便以筆對觸控面板進行連續輸入,透明導電性膜之龜裂、剝離、磨耗等仍受到抑制,進而,即便施加預定通常使用以上之強力,透明導電性膜之龜裂、剝離等仍受到抑制,故較佳。 It is preferable that the transparent conductive film of the present invention does not peel off even when the adhesion test (JIS K5600-5-6: 1999) is performed on the transparent conductive film surface. The transparent conductive film that does not peel off during the adhesion test is a transparent conductive film that is in close contact with a layer such as a transparent plastic base material or a cured resin layer that is in contact with the transparent conductive film. Therefore, even if a pen is used to touch the touch panel It is preferable that cracks, peeling, abrasion, etc. of the transparent conductive film are suppressed by continuous input. Furthermore, even if a force exceeding the intended normal use is applied, cracks, peeling, etc. of the transparent conductive film are suppressed.
本發明之透明導電性膜片較佳為銦-錫複合氧化物之透明導電性膜之晶粒徑為10nm至100nm,銦-錫複合氧化物之透明導電性膜之結晶度為20% 至80%。若銦-錫複合氧化物之透明導電性膜之晶粒徑為10nm以上,則透明導電性膜因透明導電性膜之晶粒周圍之應變致使適度變硬,故筆滑動耐久性優異,故較佳。更佳為銦-錫複合氧化物之透明導電性膜之晶粒徑為30nm以上。 The transparent conductive film of the present invention is preferably a transparent conductive film of indium-tin composite oxide with a crystal grain size of 10 nm to 100 nm, and a crystallinity of the transparent conductive film of indium-tin composite oxide with a crystallinity of 20%. to 80%. If the crystal grain size of the transparent conductive film of the indium-tin composite oxide is 10 nm or more, the transparent conductive film becomes moderately hard due to strain around the crystal grains of the transparent conductive film, so the pen sliding durability is excellent, and therefore it is relatively good. More preferably, the crystal grain size of the transparent conductive film of the indium-tin composite oxide is 30 nm or more.
另一方面,若銦-錫複合氧化物之透明導電性膜之晶粒徑為100nm以下,則不會由透明導電性膜之晶粒周圍之應變導致透明導電性膜變得過硬,故筆重加壓耐久性優異,故較佳。更佳為銦-錫複合氧化物之透明導電性膜之晶粒徑為90nm以下。 On the other hand, if the crystal grain size of the transparent conductive film of the indium-tin composite oxide is 100 nm or less, the strain around the crystal grains of the transparent conductive film will not cause the transparent conductive film to become too hard, so the pen will be heavy. It is preferred because it has excellent pressurization durability. More preferably, the crystal grain size of the transparent conductive film of the indium-tin composite oxide is 90 nm or less.
於其中一態樣中,銦-錫複合氧化物之透明導電性膜之晶粒徑為30nm以上至95nm以下,例如為40nm以上至90nm以下。 In one aspect, the crystal grain size of the transparent conductive film of the indium-tin composite oxide is from 30 nm to 95 nm, for example, from 40 nm to 90 nm.
若銦-錫複合氧化物之透明導電性膜之結晶度為20%以上,則因佔據透明導電性膜之硬的結晶致使適度變硬,筆滑動耐久性優異,故較佳。更佳為銦-錫複合氧化物之透明導電性膜之結晶度為25%以上。另一方面,若銦-錫複合氧化物之透明導電性膜之結晶度為80%以下,則雖然硬的結晶之含量多但透明導電性膜不會變得過硬,故筆重加壓耐久性優異,故較佳。 It is preferable that the crystallinity of the transparent conductive film of the indium-tin composite oxide is 20% or more because the hard crystals occupying the transparent conductive film are moderately hardened and the pen sliding durability is excellent. More preferably, the crystallinity of the transparent conductive film of the indium-tin composite oxide is 25% or more. On the other hand, if the crystallinity of the transparent conductive film of the indium-tin composite oxide is 80% or less, the transparent conductive film will not become too hard even though the content of hard crystals is high, so the pen will not become too hard under heavy pressure. Excellent, therefore better.
於其中一態樣中,銦-錫複合氧化物之透明導電性膜之結晶度為25%以上至78%以下,例如為25%以上至76%以下。 In one aspect, the crystallinity of the transparent conductive film of the indium-tin composite oxide is from 25% to 78%, for example, from 25% to 76%.
本發明之透明導電性膜片較佳為透明導電性膜之三維表面粗糙度SRa為1nm至100nm。若透明導電性膜之三維表面粗糙度SRa為1nm至100nm,則透明導電性膜之表面突起小,故經筆重加壓試驗時表面突起之變形量變小而抑制透明導電性膜產生龜裂,進而於透明導電性膜具有稍許之表面突起,故亦能夠保持膜片捲取性,故較佳。更佳為透明導電性膜之三維表面粗糙度SRa為1nm至80nm。進而佳為透明導電性膜之三維表面粗糙度SRa為1nm至65nm。 The transparent conductive film of the present invention preferably has a three-dimensional surface roughness SRa of 1 nm to 100 nm. If the three-dimensional surface roughness SRa of the transparent conductive film is 1nm to 100nm, the surface protrusions of the transparent conductive film are small, so the deformation of the surface protrusions during the pen weight test becomes smaller and the occurrence of cracks in the transparent conductive film is suppressed. Furthermore, it is preferable to have slight surface protrusions on the transparent conductive film, so that the rollability of the film sheet can be maintained. More preferably, the three-dimensional surface roughness SRa of the transparent conductive film is 1 nm to 80 nm. Furthermore, it is preferable that the three-dimensional surface roughness SRa of the transparent conductive film is 1 nm to 65 nm.
本發明之透明導電性膜較佳為由銦-錫複合氧化物所構成、且含有0.5質量%以上至10質量%以下之氧化錫。銦-錫複合氧化物中之氧化錫對於氧化銦而言相當於雜質。由於含有氧化錫之雜質,故銦-錫複合氧化物之融點增大。亦即,氧化錫雜質之含有係於妨礙結晶化之方向發揮作用,故為與晶粒徑或結晶度等結晶性強烈相關之重要因素。若含有0.5質量%以上之氧化錫,則透明導電性膜片之表面電阻成為實用之水準而較佳。進而佳為氧化錫之含有率為1質量%以上,尤佳為2質量%以上。若氧化錫之含有率為10質量%以下,則容易引起調節為後述之半結晶狀態後的結晶化,筆滑動耐久性變得良好而較佳。氧化錫之含有率更佳為8質量%以下,進而佳為6質量%以下,尤佳為4質量%以下。再者,本發明之透明導電性膜片之表面電阻較佳為50Ω/□至900Ω/□,更佳為50至Ω/□600Ω/□。 The transparent conductive film of the present invention is preferably composed of indium-tin composite oxide and contains 0.5 mass% or more and 10 mass% or less tin oxide. Tin oxide in the indium-tin composite oxide is equivalent to an impurity for indium oxide. Due to the inclusion of tin oxide impurities, the melting point of the indium-tin composite oxide increases. That is, the inclusion of tin oxide impurities acts in the direction of inhibiting crystallization, and is therefore an important factor strongly related to crystallinity such as crystal grain size and crystallinity. If the tin oxide content is 0.5% by mass or more, the surface resistance of the transparent conductive film becomes a practical level, which is preferable. Furthermore, the tin oxide content is preferably 1% by mass or more, more preferably 2% by mass or more. When the content of tin oxide is 10% by mass or less, crystallization after adjusting to a semi-crystalline state described below is likely to occur, and the pen sliding durability becomes good, which is preferable. The content rate of tin oxide is more preferably 8 mass% or less, further preferably 6 mass% or less, and particularly preferably 4 mass% or less. Furthermore, the surface resistance of the transparent conductive film of the present invention is preferably 50Ω/□ to 900Ω/□, more preferably 50 to Ω/□600Ω/□.
於本發明中,透明導電性膜之厚度較佳為10nm以上至30nm以下。透明導電性膜之厚度係與晶粒徑或結晶度等結晶性強烈相關之重要因素。若透明導電性膜之厚度為10nm以上,則非晶於透明導電性膜不會過多,容易賦予作成後述之半結晶狀態的適度之晶粒徑及結晶度,結果保有筆滑動耐久性而較佳。更佳為透明導電性膜之厚度為13nm以上,更佳為16nm以上。另外,若透明導電性膜之厚度為30nm以下,則透明導電性膜之晶粒徑不會變得過大,結晶度不會變得過高,容易保持半結晶狀態,保有筆重加壓耐久性而較佳。更佳為28nm以下,進而佳為25nm以下。 In the present invention, the thickness of the transparent conductive film is preferably from 10 nm to 30 nm. The thickness of the transparent conductive film is an important factor that is strongly related to crystallinity such as crystal grain size and crystallinity. If the thickness of the transparent conductive film is 10 nm or more, the amorphous film will not be too much in the transparent conductive film, and it is easy to provide an appropriate crystal grain size and crystallinity to create a semi-crystalline state described later. As a result, pen sliding durability is maintained and is preferable. . More preferably, the thickness of the transparent conductive film is 13 nm or more, more preferably 16 nm or more. In addition, if the thickness of the transparent conductive film is 30 nm or less, the crystal grain size of the transparent conductive film will not become too large, the crystallinity will not become too high, and the semi-crystalline state will be easily maintained, and the pen weight durability will be maintained. And better. More preferably, it is 28 nm or less, and still more preferably, it is 25 nm or less.
本發明之透明導電性膜片較佳為,於透明導電性膜片的透明導電性膜側進行耐彎曲性試驗(JIS K5600-5-1:1999),以10倍之放大鏡觀察彎曲部時未發生破裂或剝落之心軸直徑小於20mm。若心軸直徑小於20mm,則於經筆重加 壓試驗時接觸透明導電性膜之層不破裂,透明導電性膜未產生龜裂,故較佳。更佳為18mm以下。 The transparent conductive film of the present invention is preferably subjected to a bending resistance test (JIS K5600-5-1: 1999) on the transparent conductive film side of the transparent conductive film. When observing the bent portion with a 10x magnifying glass, the The diameter of the mandrel that is cracked or peeled is less than 20mm. If the diameter of the mandrel is less than 20mm, add more weight to the sutra pen. During the pressure test, the layer in contact with the transparent conductive film does not break, and the transparent conductive film does not crack, so it is preferable. Preferably, it is below 18mm.
於其中一態樣中,耐彎曲性試驗之值可為1mm以上,例如可為8mm以上、10mm以上。另外,於其中一態樣中,耐彎曲性試驗之值為13mm以上,可為15mm以上。 In one aspect, the value of the bending resistance test may be above 1 mm, for example, above 8 mm or above 10 mm. In addition, in one of the aspects, the value of the bending resistance test is 13 mm or more, and may be 15 mm or more.
藉由為此種範圍內,則於經筆重加壓試驗時接觸透明導電性膜之層不破裂,透明導電性膜未產生龜裂,故較佳。 This range is preferable because the layer in contact with the transparent conductive film will not be broken during the pen heavy pressure test and the transparent conductive film will not be cracked.
另外,能夠提供一種兼具優異之筆滑動耐久性及優異之筆重加壓耐久性的透明導電性膜片。 In addition, it is possible to provide a transparent conductive film that has both excellent pen sliding durability and excellent pen heavy pressure durability.
本發明之透明導電性膜片較佳為透明塑膠膜片基材之厚度為100μm至250μm之範圍,更佳為130μm至220μm。若塑膠膜片之厚度為100μm以上,則保持機械強度,尤其用於觸控面板時的針對筆輸入之變形小,筆滑動耐久性及筆重加壓耐久性優異,故較佳。另一方面,若厚度為250μm以下,則在用於觸控面板時,無需特別增大用以藉由筆輸入進行定位的荷重而較佳。 The transparent conductive film of the present invention is preferably a transparent plastic film base material with a thickness in the range of 100 μm to 250 μm, more preferably 130 μm to 220 μm. If the thickness of the plastic film is 100 μm or more, the mechanical strength is maintained, and the deformation for pen input is small, especially when used in a touch panel, and the pen sliding durability and pen heavy pressure durability are excellent, so it is preferable. On the other hand, if the thickness is 250 μm or less, it is preferable because there is no need to particularly increase the load for positioning by pen input when used in a touch panel.
本發明之透明導電性膜片較佳為於透明導電性膜與塑膠膜片基材之間具有硬化型樹脂層。藉由具有硬化型樹脂層,則可增加透明導電性膜之密接力或將施加於透明導電性膜之力加以分散,故筆滑動試驗中之透明導電性膜之龜裂、剝離、磨耗等受到抑制,進而,筆重加壓試驗中之透明導電性膜之龜裂、剝離等受到抑制,故較佳。 The transparent conductive film of the present invention preferably has a hardening resin layer between the transparent conductive film and the plastic film base material. By having a hardened resin layer, the adhesive force of the transparent conductive film can be increased or the force applied to the transparent conductive film can be dispersed, so cracks, peeling, abrasion, etc. of the transparent conductive film in the pen sliding test are reduced. It is preferable because it suppresses cracking, peeling, etc. of the transparent conductive film during the heavy pressure test of the pen.
本發明之透明導電性膜之結晶性為不過高、不過低之狀態(將此種結晶性稱為半結晶性或半結晶質)。將透明導電性膜穩定地作成半結晶性係非常困難。原因在於:於從非晶性向結晶性急遽相變之中途停止的狀態為半結晶性。 因此,對作為與結晶性有關之參數的成膜氛圍中之水分量敏感,尤其對含氫原子之氣體非常敏感,成膜氛圍中之含氫原子之氣體或水分量若稍少,則幾乎成為完全之結晶性(高結晶性),反之,成膜氛圍中之含氫原子之氣體或水分量若稍多,則成為非晶性(低結晶性)。 The crystallinity of the transparent conductive film of the present invention is not too high and not too low (such crystallinity is called semi-crystalline or semi-crystalline). It is very difficult to stably make a transparent conductive film into a semi-crystalline system. The reason is that the state that stops midway during the rapid phase transition from amorphous to crystalline is semi-crystalline. Therefore, it is sensitive to the amount of water in the film-forming atmosphere, which is a parameter related to crystallinity, and is particularly sensitive to gas containing hydrogen atoms. If the amount of gas or water containing hydrogen atoms in the film-forming atmosphere is slightly smaller, it will almost become Complete crystallinity (high crystallinity). On the contrary, if the amount of gas or water containing hydrogen atoms in the film-forming atmosphere is slightly too much, it will become amorphous (low crystallinity).
關於用於獲得本發明之透明導電性膜片的製造方法,並無特別限定,例如可較佳地例示以下般之製造方法。 The manufacturing method for obtaining the transparent conductive film of the present invention is not particularly limited. For example, the following manufacturing method can be preferably exemplified.
作為於透明塑膠膜片基材上的至少其中一面形成結晶性之銦-錫複合氧化物之透明導電性膜之方法,可較佳地使用濺鍍法。為了以高生產性製造透明導電性膜片,較佳為使用所謂輥式濺鍍裝置,該輥式濺鍍裝置供給膜輥,並於成膜後捲繞成膜輥之形狀。可較佳地採用:於成膜氛圍中,利用質量流控制器(mass flow controller)按下述記載之量導入含氫原子之氣體(只要為氫氣、氨氣、氫氣+氬氣混合氣體等含氫原子之氣體,則並無特別限定。其中水除外),進而將濺鍍時之膜片溫度設為0℃以下,使用含有0.5質量%至10質量%之氧化錫的銦-錫複合氧化物之燒結靶,以銦-錫複合氧化物之透明導電性膜之厚度成為10nm至30nm之方式進行調整,於銦-錫複合氧化物之透明導電性膜之三維表面粗糙度SRa為1nm至100nm的透明塑膠膜片上,形成透明導電性膜。於濺鍍時之成膜氛圍中,含氫原子之氣體有妨礙透明導電性膜之結晶化之效果。於在成膜氛圍中流動氫氣之情形時,較佳為(氫氣流量)÷(惰性氣體流量+氫氣流量)×100之值(有時僅記載為氫濃度)為0.01%至3.00%。氫濃度例如為0.01%以上至2.00%,亦可為0.01%以上至1.00%以下。 As a method for forming a transparent conductive film of crystalline indium-tin composite oxide on at least one side of the transparent plastic film base material, sputtering can be preferably used. In order to produce a transparent conductive film with high productivity, it is preferable to use a so-called roll sputtering device that supplies a film roll and winds it into the shape of the film roll after film formation. It can be preferably used: in the film-forming atmosphere, use a mass flow controller to introduce a gas containing hydrogen atoms (as long as it is hydrogen, ammonia, hydrogen + argon mixed gas, etc.) in the amount described below. The gas of hydrogen atoms is not particularly limited (excluding water), and the film temperature during sputtering is set to below 0°C, and an indium-tin composite oxide containing 0.5% to 10% by mass of tin oxide is used. The sintered target is adjusted so that the thickness of the transparent conductive film of the indium-tin composite oxide is 10 nm to 30 nm, and the three-dimensional surface roughness SRa of the transparent conductive film of the indium-tin composite oxide is 1 nm to 100 nm. A transparent conductive film is formed on the transparent plastic film. In the film-forming atmosphere during sputtering, gas containing hydrogen atoms has the effect of hindering the crystallization of the transparent conductive film. When hydrogen gas flows in the film-forming atmosphere, the value of (hydrogen gas flow rate) ÷ (inert gas flow rate + hydrogen gas flow rate) × 100 (sometimes described only as hydrogen concentration) is preferably 0.01% to 3.00%. The hydrogen concentration may be, for example, 0.01% or more and 2.00% or more, or 0.01% or more and 1.00% or less.
藉由氫濃度為此種範圍內,則例如可於筆滑動耐久性試驗、筆重加壓耐久性試驗中,均可有助於導出良好之結果。 By having the hydrogen concentration within this range, it can help to derive good results in, for example, the pen sliding durability test and the pen heavy pressure durability test.
另外,作為惰性氣體,可列舉氦氣、氖氣、氬氣、氪氣、氙氣等。若為0.01%至3.00%,則可將透明導電性膜作成半結晶性而較佳。於使用氫氣以外的含氫原子之氣體之情形時,只要由含氫原子之氣體所含之氫原子量換算成氫氣(亦即氫分子)量而計算即可。於在成膜氛圍中藉由質量流控制器來精密地流動含氫原子之氣體時,藉由對於與膜輥之長度方向呈垂直之方向,以能夠均勻地噴附含氫原子之氣體之方式設置氣體噴出口,則不易成為結晶性高之部分或結晶性低之部分混合存在般之透明導電性膜,而容易獲得均勻之半結晶性之透明導電性膜,故可較佳地獲得兼具優異之筆滑動耐久性及筆重加壓耐久性之透明導電性膜片。已知若成膜氛圍中之水多,則透明導電性膜之結晶性降低,故成膜氛圍中之水分量亦為重要因素。於使用含氫原子之氣體之情形時,對膜輥進行濺鍍時之成膜氛圍的水分壓相對於惰性氣體之比的中心值(最大值與最小值之中間值)係控制於1.0×10-4至2.0×10-3,進而,關於濺鍍時之成膜氛圍的水分壓相對於惰性氣體之比,若從成膜開始時至成膜結束時為止的最大值與最小值之差為1.0×10-3以下,則遍及膜片之全長而保有透明導電性膜之結晶性之均勻性,故若除了常被用作濺鍍機的排氣裝置之旋轉泵、渦輪分子泵、冷凍泵以外,進行下述之衝擊(bombard)步驟、下述之膜輥端面的凹凸之高低差之限定等,若減少於形成透明導電性膜時自膜片釋出之水分量,遍及膜片全長而釋出均勻之水分量,則變得無需水分量之精密控制故較佳。其中,水分壓相對於惰性氣體之比之中心值亦稍許依存於銦-錫複合氧化物之透明導電性膜中的氧化錫之含有率或透明導電性膜之厚度。於銦-錫複合氧化物之透明導電性膜中的氧化錫之添加量多之情形或透明導電性膜薄之情形時,較佳為將水分壓相對於惰性氣體之比之中心值於前述範圍中設定為低。反之,於銦-錫複合氧化物之透明導電性膜中的氧化錫之
含有率少之情形或透明導電性膜厚之情形時,較佳為將水分壓相對於惰性氣體之比之中心值於前述範圍中設定為高。較佳為將濺鍍時之膜片溫度設為0℃以下,且於透明塑膠膜片上形成透明導電性膜。成膜中之膜片溫度係以調溫機之設定溫度代替,上述調溫機係調節行進膜片所接觸之中心輥之溫度。此處,於圖5表示本發明中可較佳地使用之濺鍍裝置之其中一例之示意圖,行進之膜片1局部地接觸中心輥2的表面而行進。介由煙道(chimney)3而設置有銦-錫之濺鍍靶4,於在中心輥2上行進之膜片1的表面堆積而積層銦-錫複合氧化物之薄膜。中心輥2係由未圖示之調溫機控制溫度。若膜片溫度為0℃以下,則能夠抑制自致使透明導電性膜之結晶性不均一的膜片釋出水、有機氣體等雜質氣體,故自成膜開始時至成膜結束時為止的透明導電性膜之結晶性容易變得均勻,故較佳。於使用含氫原子之氣體之情形時,較佳為濺鍍時之成膜氛圍的水分壓相對於惰性氣體之比之中心值(最大值與最小值之中間值)為1.0×10-4至2.0×10-3。若濺鍍時之成膜氛圍的水分壓相對於惰性氣體之比為前述範圍,則有效地發揮由含氫原子之氣體妨礙透明導電性膜之結晶性的作用,故較佳。另外,為了將透明導電性膜片之表面電阻及全光線穿透率設為實用之水準,較佳為於濺鍍時添加氧氣。所述製造方法主要著眼於:極力排除致使透明導電性膜之結晶性不均一的水所致結晶性之影響,藉由含氫之氣體來控制結晶性。
Examples of the inert gas include helium gas, neon gas, argon gas, krypton gas, xenon gas, and the like. If it is 0.01% to 3.00%, the transparent conductive film can be made semi-crystalline, which is preferable. When using a hydrogen atom-containing gas other than hydrogen, it can be calculated by converting the hydrogen atom weight contained in the hydrogen atom-containing gas into the hydrogen gas (i.e., hydrogen molecule) amount. When the gas containing hydrogen atoms is precisely flowed by the mass flow controller in the film-forming atmosphere, the gas containing hydrogen atoms can be sprayed uniformly in a direction perpendicular to the length direction of the film roller. When the gas ejection port is provided, the transparent conductive film is less likely to be mixed with highly crystalline parts or low crystallinity parts, and it is easy to obtain a uniform semi-crystalline transparent conductive film, so it is possible to better obtain both. Transparent conductive diaphragm with excellent pen sliding durability and pen heavy pressure durability. It is known that if there is a lot of water in the film-forming atmosphere, the crystallinity of the transparent conductive film decreases, so the moisture content in the film-forming atmosphere is also an important factor. When a gas containing hydrogen atoms is used, the central value (the middle value between the maximum value and the minimum value) of the ratio of the water pressure of the film-forming atmosphere to the inert gas when the film roll is sputtered is controlled to 1.0×10 -4 to 2.0×10 -3 , and furthermore, regarding the ratio of the water pressure of the film-forming atmosphere to the inert gas during sputtering, if the difference between the maximum value and the minimum value from the beginning of the film formation to the end of the film formation is 1.0×10 -3 or less, the uniformity of the crystallinity of the transparent conductive film is maintained throughout the entire length of the diaphragm. Therefore, in addition to the rotary pump, turbomolecular pump, and freezing pump that are often used as exhaust devices for sputtering machines, In addition, the following bombarding step, the following limitation of the height difference of the unevenness of the film roll end surface, etc. are carried out to reduce the amount of moisture released from the film when forming the transparent conductive film throughout the entire length of the film. It is better to release a uniform amount of water, which eliminates the need for precise control of the amount of water. Among them, the central value of the ratio of the water pressure to the inert gas also slightly depends on the content rate of tin oxide in the transparent conductive film of the indium-tin composite oxide or the thickness of the transparent conductive film. When the amount of tin oxide added to the transparent conductive film of the indium-tin composite oxide is large or when the transparent conductive film is thin, it is preferable to set the central value of the ratio of the water pressure to the inert gas within the aforementioned range. Medium is set to low. On the other hand, when the content rate of tin oxide in the transparent conductive film of the indium-tin composite oxide is small or the transparent conductive film is thick, it is preferable to set the central value of the ratio of the water pressure to the inert gas to Set to high in the aforementioned range. It is preferable to set the film temperature during sputtering to below 0°C, and to form a transparent conductive film on the transparent plastic film. The temperature of the film during film formation is replaced by the set temperature of the temperature regulator. The temperature regulator adjusts the temperature of the center roller in contact with the traveling film. Here, FIG. 5 shows a schematic diagram of one example of a sputtering device that can be preferably used in the present invention. The traveling
由於以下兩個原因,為了控制於塑膠膜片上將銦-錫複合氧化物加以成膜時之水分量,相較於觀察到達真空度,更佳為實際觀察成膜時之水分量。 For the following two reasons, in order to control the moisture content when the indium-tin composite oxide is formed on the plastic film, it is better to actually observe the moisture content during the film formation than to observe the vacuum degree.
作為上述原因之第一點,若藉由濺鍍而形成塑膠膜片,則膜片受到加熱而自膜片釋出水分,故成膜氛圍中之水分量增加,較到達真空度時所測 定之水分量更增加,故相較於以到達真空度進行表述,以成膜時之水分量進行表述係更為準確。 As the first reason for the above, if a plastic diaphragm is formed by sputtering, the diaphragm is heated and moisture is released from the diaphragm. Therefore, the amount of moisture in the film-forming atmosphere increases, and is higher than that measured when the vacuum degree is reached. The specified moisture content increases, so it is more accurate to express it in terms of the moisture content during film formation than to express it in terms of the degree of vacuum reached.
上述原因之第二點為,此時使用大量投入透明塑膠膜片之裝置。原因在於:此種裝置係將膜片以膜輥之形態投入。若將膜片製成輥並投入至真空槽,則雖然水容易自輥之外層部分散逸,但在輥之內層部分,水難以散逸。於測定到達真空度時,膜輥雖然停止,但於成膜時膜輥行進,故大量含水之膜輥的內層部分被捲出,故成膜氛圍中之水分量增加,相較於測定到達真空度時之水分量更增加。於本發明中,藉由在控制成膜氛圍中之水分量時,觀測濺鍍時之成膜氛圍的水分壓相對於惰性氣體之比,則可較佳地應對。 The second reason for the above is that at this time, a device using a large amount of transparent plastic film is used. The reason is that this device puts the film in the form of a film roller. If the film sheet is made into a roller and put into a vacuum tank, although water easily escapes from the outer layer of the roller, it is difficult for water to escape from the inner layer of the roller. When the measurement reaches the vacuum degree, although the film roller stops, the film roller moves forward during film formation, so the inner layer of the film roller containing a large amount of water is rolled out, so the moisture content in the film forming atmosphere increases. Compared with the measurement reaching the vacuum degree, The moisture content increases even more under vacuum. In the present invention, when controlling the moisture content in the film-forming atmosphere, a better response can be achieved by observing the ratio of the water pressure of the film-forming atmosphere to the inert gas during sputtering.
較佳為於形成透明導電性膜之前,使膜片經過衝擊步驟。所謂衝擊步驟,係指於流動僅氬氣等惰性氣體、或氧氣等反應性氣體與惰性氣體之混合氣體的狀態下,施加電壓進行放電,產生電漿。具體而言,較佳為利用SUS(Stainless Steel;不鏽鋼)靶等藉由RF(Radio Frequency;射頻)濺鍍來衝擊膜片。藉由衝擊步驟使膜片暴露於電漿,故水或有機成分自膜片釋出,於形成透明導電性膜時自膜片釋出之水或有機成分減少,故自成膜開始時至成膜結束時為止的透明導電性膜之結晶性容易變得均勻,故較佳。另外,透明導電性膜所接觸之層因衝擊步驟而活化,故透明導電性膜之密接性提高,因此筆滑動耐久性或筆重加壓耐久性提高,故較佳。 It is preferable to subject the film to an impact step before forming the transparent conductive film. The so-called impact step refers to applying a voltage to discharge and generate plasma while only an inert gas such as argon gas or a mixed gas of a reactive gas such as oxygen and an inert gas is flowing. Specifically, it is preferable to impact the diaphragm by RF (Radio Frequency; radio frequency) sputtering using a SUS (Stainless Steel; stainless steel) target or the like. The diaphragm is exposed to plasma through the impact step, so water or organic components are released from the diaphragm. When the transparent conductive film is formed, the water or organic components released from the diaphragm are reduced, so from the beginning of film formation to the completion of It is preferable because the crystallinity of the transparent conductive film until the completion of the film can easily become uniform. In addition, it is preferable that the layer in contact with the transparent conductive film is activated by the impact step, so that the adhesion of the transparent conductive film is improved, and therefore the sliding durability of the pen or the durability of the pen under heavy pressure are improved.
用以形成透明導電性膜之膜輥較佳為於輥端面,最凸出之部位與最凹陷之部位的高低差為10mm以下。若為10mm以下,則於將膜輥投入至濺鍍裝置時,水或有機成分自膜片端面釋出之方式的偏差變小,故自成膜開始時至成膜結束時為止的透明導電性膜之結晶性容易變得均勻,故較佳。 The film roller used to form the transparent conductive film is preferably located on the end surface of the roller, and the height difference between the most protruding part and the most concave part is 10 mm or less. If it is 10 mm or less, when the film roll is put into the sputtering device, the deviation in the way water or organic components are released from the end surface of the film becomes smaller, so the transparent conductivity from the beginning to the end of the film formation It is preferable because the crystallinity of the film can be easily made uniform.
於在透明塑膠膜片基材上的至少其中一面形成結晶性之銦-錫複合氧化物之透明導電性膜的方法中,較佳為於濺鍍時導入氧氣。若於濺鍍時導入氧氣,則不存在銦-錫複合氧化物之透明導電性膜的由缺氧所致的不良狀況,透明導電性膜片之表面電阻低,全光線穿透率變高而較佳。因此,為了將透明導電性膜片之表面電阻及全光線穿透率作成實用之水準,較佳為於濺鍍時導入氧氣。再者,本發明之透明導電性膜片之全光線穿透率較佳為70%至95%。 In the method of forming a transparent conductive film of crystalline indium-tin composite oxide on at least one side of a transparent plastic film base material, it is preferable to introduce oxygen during sputtering. If oxygen is introduced during sputtering, there will be no disadvantages caused by oxygen deficiency in the transparent conductive film of the indium-tin composite oxide. The surface resistance of the transparent conductive film will be low, and the total light transmittance will be high. Better. Therefore, in order to increase the surface resistance and total light transmittance of the transparent conductive film to practical levels, it is preferable to introduce oxygen during sputtering. Furthermore, the total light transmittance of the transparent conductive film of the present invention is preferably 70% to 95%.
本發明之透明導電性膜片較佳為,於透明塑膠膜片基材上成膜積層銦-錫複合氧化物之透明導電性膜後,於含氧之氛圍下,於80℃至200℃實施0.1小時至12小時之加熱處理而成。若為80℃以上,則容易進行為了設為半結晶狀態而稍提高結晶性之處置,筆滑動耐久性提高而較佳。若為200℃以下,則確保透明塑膠膜片之平面性而較佳。 The transparent conductive film of the present invention is preferably formed by forming a transparent conductive film laminated with an indium-tin composite oxide on a transparent plastic film base material, and then performing the process in an oxygen-containing atmosphere at 80°C to 200°C. It takes 0.1 hour to 12 hours of heat treatment. If it is 80° C. or higher, it is easier to perform a process of slightly increasing the crystallinity in order to bring it into a semi-crystalline state, and the pen sliding durability is improved, which is preferable. If it is below 200°C, it is better to ensure the flatness of the transparent plastic film.
[透明塑膠膜片基材] [Transparent plastic film base material]
所謂本發明所用之透明塑膠膜片基材,為將有機高分子以膜片狀進行熔融擠出或溶液擠出,根據需要於長度方向及/或寬度方向實施延伸、冷卻、熱固定而得之膜片,作為有機高分子,可列舉:聚乙烯、聚丙烯、聚對苯二甲酸乙二酯、聚2,6-萘二甲酸乙二酯、聚對苯二甲酸丙二酯、聚對苯二甲酸丁二酯、尼龍6、尼龍4、尼龍66、尼龍12、聚醯亞胺、聚醯胺醯亞胺、聚醚碸、聚醚醚酮、聚碳酸酯、聚丙烯酸酯、纖維素丙酸酯、聚氯乙烯、聚偏二氯乙烯、聚乙烯醇、聚醚醯亞胺、聚苯硫醚、聚苯醚、聚苯乙烯、間規聚苯乙烯、降冰片烯系聚合物等。
The transparent plastic film base material used in the present invention is obtained by melt-extruding or solution-extruding organic polymers in the form of a film sheet, and then stretching, cooling, and heat-fixing in the length direction and/or width direction as needed. Diaphragms, as organic polymers, include: polyethylene, polypropylene, polyethylene terephthalate,
這些有機高分子中,較佳為聚對苯二甲酸乙二酯、聚對苯二甲酸丙二酯、聚對苯二甲酸丁二酯、聚2,6-萘二甲酸乙二酯、間規聚苯乙烯、降冰片
烯系聚合物、聚碳酸酯、聚丙烯酸酯等。另外,這些有機高分子亦可將其他有機聚合物之單體進行少量共聚合,或摻雜其他有機高分子。
Among these organic polymers, preferred are polyethylene terephthalate, polytrimethylene terephthalate, polybutylene terephthalate,
本發明所用之透明塑膠膜片基材亦可於不損及本發明之目的之範圍,對前述膜片實施電暈放電處理、輝光放電處理、火焰處理、紫外線照射處理、電子束照射處理、臭氧處理等表面活化處理。 The transparent plastic film base material used in the present invention can also be subjected to corona discharge treatment, glow discharge treatment, flame treatment, ultraviolet irradiation treatment, electron beam irradiation treatment, ozone treatment, etc. Treatment and other surface activation treatments.
若於透明塑膠膜片基材塗佈硬化型樹脂層,則透明導電性膜能夠與硬化型樹脂層強力密接,或者能夠將施加於透明導電性膜之力加以分散,故筆滑動試驗中之透明導電性膜之龜裂、剝離、磨耗等受到抑制,進而筆重加壓試驗中之透明導電性膜之龜裂、剝離等受到抑制,故較佳。另外,若將硬化型樹脂層的表面作成凹凸並形成透明導電性膜,則於筆滑動試驗時透明導電薄膜與玻璃接觸時之真正的接觸面積減少,故玻璃面與透明導電性膜之滑行性變良好而筆滑動耐久性提高,或能夠提高膜輥之捲取性,或者能夠期待抗牛頓環(anti Newton-ring)性,但若凹凸過大,則經筆重加壓試驗時之表面突起之變形量變大,透明導電性膜產生龜裂,故欠佳。因此,作為表面凹凸,透明導電性膜之三維表面粗糙度SRa較佳為設為1nm至100nm。以下,對硬化型樹脂層加以詳細記載。 If a cured resin layer is coated on a transparent plastic film base material, the transparent conductive film can be strongly adhered to the cured resin layer, or the force applied to the transparent conductive film can be dispersed, so the transparency in the pen sliding test It is preferable because cracks, peeling, abrasion, etc. of the conductive film are suppressed, and cracks, peeling, etc. of the transparent conductive film in the pen heavy pressure test are suppressed. In addition, if the surface of the curable resin layer is concave and convex and a transparent conductive film is formed, the actual contact area between the transparent conductive film and the glass during the pen sliding test is reduced, so the sliding properties of the glass surface and the transparent conductive film are reduced. It becomes better and the pen sliding durability is improved, or the rollability of the film roller can be improved, or anti-Newton-ring (anti-Newton-ring) properties can be expected. However, if the unevenness is too large, the surface protrusions during the pen heavy pressure test will be reduced. The amount of deformation becomes large and cracks occur in the transparent conductive film, which is undesirable. Therefore, as the surface unevenness, the three-dimensional surface roughness SRa of the transparent conductive film is preferably 1 nm to 100 nm. The curable resin layer will be described in detail below.
另外,作為本發明中較佳地使用之前述硬化型樹脂,只要為藉由加熱、紫外線照射、電子束照射等能量施加而硬化之樹脂,則並無特別限制,可列舉:矽酮樹脂、丙烯酸樹脂、甲基丙烯酸樹脂、環氧樹脂、三聚氰胺樹脂、聚酯樹脂、胺基甲酸酯樹脂等。就生產性之觀點而言,較佳為以紫外線硬化型樹脂作為主成分。 In addition, the aforementioned curable resin preferably used in the present invention is not particularly limited as long as it is cured by energy application such as heating, ultraviolet irradiation, electron beam irradiation, etc. Examples include: silicone resin, acrylic resin Resin, methacrylic resin, epoxy resin, melamine resin, polyester resin, urethane resin, etc. From the viewpoint of productivity, it is preferable to use ultraviolet curable resin as the main component.
作為此種紫外線硬化型樹脂,例如可列舉:多元醇之丙烯酸或甲基丙烯酸酯般之多官能性之丙烯酸酯樹脂;由二異氰酸酯、多元醇及丙烯酸或甲基丙烯酸之羥基烷基酯等所合成般之多官能性之丙烯酸胺基甲酸酯樹脂等。根據需要,可於這些多官能性之樹脂添加單官能性之單體、例如乙烯基吡咯烷酮、甲基丙酸酯甲酯、苯乙烯等進行共聚合。 Examples of such ultraviolet curable resins include polyfunctional acrylate resins such as acrylic or methacrylic esters of polyols; hydroxyalkyl resins made of diisocyanates, polyols, and acrylic or methacrylic acid esters; Synthesize polyfunctional acrylic urethane resin, etc. If necessary, monofunctional monomers such as vinylpyrrolidone, methyl methacrylate, styrene, etc. can be added to these polyfunctional resins for copolymerization.
另外,為了提高透明導電性薄膜與硬化型樹脂層之附著力,有效的是藉由以下記載之方法將硬化型樹脂層的表面加以處理。作為具體方法,可列舉:為了增加羰基、羧基、羥基而照射輝光或電暈放電之放電處理法;為了增加胺基、羥基、羰基等極性基而以酸或鹼進行處理之化學藥品處理法等。 In addition, in order to improve the adhesion between the transparent conductive film and the curable resin layer, it is effective to treat the surface of the curable resin layer by the method described below. Specific methods include: a discharge treatment method of irradiating glow or corona discharge to increase carbonyl groups, carboxyl groups, and hydroxyl groups; a chemical treatment method of treating with acid or alkali to increase polar groups such as amine groups, hydroxyl groups, and carbonyl groups, etc. .
紫外線硬化型樹脂通常係添加光聚合起始劑來使用。作為光聚合起始劑,可無特別限制地使用吸收紫外線而產生自由基之公知之化合物,作為此種光聚合起始劑,例如可列舉各種安息香類、苯基酮類、二苯甲酮類等。光聚合起始劑之添加量較佳為相對於紫外線硬化型樹脂每100質量份中通常設為1質量份至5質量份。 Ultraviolet curing resin is usually used by adding a photopolymerization initiator. As the photopolymerization initiator, well-known compounds that absorb ultraviolet rays and generate free radicals can be used without particular limitation. Examples of such photopolymerization initiators include various benzoins, phenyl ketones, and benzophenones. wait. The addition amount of the photopolymerization initiator is preferably 1 to 5 parts by mass per 100 parts by mass of the ultraviolet curable resin.
另外,於本發明中,於硬化型樹脂層中,較佳為除了作為主要構成成分之硬化型樹脂以外亦併用無機粒子或有機粒子。藉由使無機粒子或有機粒子分散於硬化型樹脂,能夠於硬化型樹脂表面形成凹凸,提高廣泛區域中之表面粗糙度。 In addition, in the present invention, in the curable resin layer, it is preferable to use inorganic particles or organic particles in addition to the curable resin as the main component. By dispersing inorganic particles or organic particles in the curable resin, unevenness can be formed on the surface of the curable resin, thereby improving surface roughness in a wide area.
作為前述無機粒子,可例示二氧化矽等。作為前述有機粒子,可例示聚酯樹脂、聚烯烴樹脂、聚苯乙烯樹脂、聚醯胺樹脂等。 Examples of the inorganic particles include silica and the like. Examples of the organic particles include polyester resin, polyolefin resin, polystyrene resin, polyamide resin, and the like.
亦較佳為除了作為主要構成成分之硬化型樹脂以外,於無機粒子或有機粒子以外亦併用與硬化型樹脂為非相溶之樹脂。藉由少量併用與基質之 硬化型樹脂為非相溶之樹脂,而能夠於硬化型樹脂中發生相分離,使非互溶樹脂以粒子狀分散。能夠藉由該非互溶樹脂之分散粒子而於硬化型樹脂表面形成凹凸,提高廣泛區域中之表面粗糙度。 It is also preferable to use a resin incompatible with the curable resin in addition to the inorganic particles or organic particles in addition to the curable resin as the main component. By using a small amount in combination with the base The curable resin is a non-miscible resin, and phase separation can occur in the curable resin, causing the non-miscible resin to be dispersed in the form of particles. The dispersed particles of the immiscible resin can form unevenness on the surface of the hardened resin, thereby improving the surface roughness in a wide area.
作為非互溶樹脂,可例示聚酯樹脂、聚烯烴樹脂、聚苯乙烯樹脂、聚醯胺樹脂等。 Examples of the immiscible resin include polyester resin, polyolefin resin, polystyrene resin, polyamide resin, and the like.
此處作為其中一例,顯示於硬化型樹脂層使用無機粒子之情形之調配比率。較佳為相對於紫外線硬化型樹脂每100質量份中無機粒子為0.1質量份至20質量份,進而佳為0.1質量份至15質量份,尤佳為0.1質量份至12質量份。 As one example, the blending ratio of inorganic particles used in the curable resin layer is shown here. The inorganic particles are preferably 0.1 to 20 parts by mass per 100 parts by mass of the ultraviolet curable resin, more preferably 0.1 to 15 parts by mass, and particularly preferably 0.1 to 12 parts by mass.
若相對於紫外線硬化型樹脂每100質量份中前述無機粒子之調配量為0.1質量份至20質量份,則形成於硬化型樹脂層表面之凸部不會過小,能夠有效地賦予三維表面粗糙度,於經筆重加壓試驗時表面突起之變形量變小而透明導電性膜所產生之龜裂受到抑制,進而於透明導電性膜具有稍許之表面突起,故亦能夠保持膜片捲取性,故較佳。 If the blending amount of the aforementioned inorganic particles is 0.1 to 20 parts by mass per 100 parts by mass of the ultraviolet curable resin, the convex portions formed on the surface of the curable resin layer will not be too small, and three-dimensional surface roughness can be effectively imparted. , the amount of deformation of the surface protrusions during the pen heavy pressure test became smaller and the cracks produced in the transparent conductive film were suppressed. Furthermore, the transparent conductive film has slight surface protrusions, so the film rollability can also be maintained. Therefore it is better.
前述紫外線硬化型樹脂、光聚合起始劑、以及無機粒子或有機粒子或者與紫外線硬化型樹脂為非相溶之樹脂係分別溶解於共同之溶劑而製備塗佈液。所使用之溶劑並無特別限制,例如可將下述溶劑單獨或混合使用:如乙醇、異丙醇等這種醇系溶劑;如乙酸乙酯、乙酸丁酯等這種酯系溶劑;如二丁醚、乙二醇單乙醚等這種醚系溶劑;如甲基異丁基酮、環己酮等這種酮系溶劑;如甲苯、二甲苯、溶劑石腦油等這種芳香族烴系溶劑等。 The aforementioned ultraviolet curable resin, photopolymerization initiator, and inorganic particles or organic particles or resins that are incompatible with the ultraviolet curable resin are respectively dissolved in a common solvent to prepare a coating liquid. The solvent used is not particularly limited. For example, the following solvents can be used alone or in mixture: alcohol solvents such as ethanol, isopropyl alcohol, etc.; ester solvents such as ethyl acetate, butyl acetate, etc.; Ether-based solvents such as butyl ether and ethylene glycol monoethyl ether; ketone-based solvents such as methyl isobutyl ketone, cyclohexanone, etc.; aromatic hydrocarbon-based solvents such as toluene, xylene, solvent naphtha, etc. Solvents, etc.
塗佈液中之樹脂成分之濃度可考慮與塗佈法相應之黏度等而適當選擇。例如,紫外線硬化型樹脂、光聚合起始劑及高分子量之聚酯樹脂之合 計量於塗佈液中所佔之比率通常為20質量%至80質量%。另外,於該塗佈液,根據需要亦可添加其他公知之添加劑,例如矽酮系調平劑等。 The concentration of the resin component in the coating liquid can be appropriately selected taking into account the viscosity corresponding to the coating method. For example, a combination of ultraviolet curing resin, photopolymerization initiator and high molecular weight polyester resin The proportion measured in the coating liquid is usually 20 mass% to 80 mass%. In addition, other well-known additives, such as silicone leveling agents, may be added to the coating liquid as needed.
於本發明中,所製備之塗佈液係塗佈於透明塑膠膜片基材上。關於塗佈法,並無特別限制,可使用棒塗法、凹版塗佈法、逆塗法等自以往已知之方法。 In the present invention, the prepared coating liquid is coated on a transparent plastic film base material. The coating method is not particularly limited, and conventionally known methods such as bar coating, gravure coating, and reverse coating can be used.
所塗佈之塗佈液係於後續之乾燥步驟中將溶劑蒸發去除。於該步驟中,均勻地溶解於塗佈液中之高分子量之聚酯樹脂成為粒子而於紫外線硬化型樹脂中析出。藉由將塗膜加以乾燥後,對塑膠膜片照射紫外線,則紫外線硬化型樹脂交聯、硬化而形成硬化型樹脂層。該硬化之步驟中,高分子量之聚酯樹脂之粒子被固定於硬塗層中,並且於硬化型樹脂層的表面形成突起而提高廣泛區域中之表面粗糙度。 The solvent of the applied coating liquid is evaporated and removed in the subsequent drying step. In this step, the high molecular weight polyester resin uniformly dissolved in the coating liquid becomes particles and precipitates in the ultraviolet curable resin. By drying the coating film and then irradiating the plastic film with ultraviolet rays, the ultraviolet curable resin is cross-linked and hardened to form a curable resin layer. In this hardening step, particles of high molecular weight polyester resin are fixed in the hard coat layer and protrusions are formed on the surface of the hardened resin layer to improve the surface roughness in a wide area.
另外,硬化型樹脂層之厚度較佳為0.1μm至15μm之範圍。更佳為0.5至10μm之範圍,尤佳為1μm至8μm之範圍。於硬化型樹脂層之厚度為0.1μm以上之情形時,形成充分之突起而較佳。另一方面,若為15μm以下,則生產性良好而較佳。 In addition, the thickness of the curable resin layer is preferably in the range of 0.1 μm to 15 μm. More preferably, it is in the range of 0.5 to 10 μm, and particularly preferably in the range of 1 μm to 8 μm. When the thickness of the curable resin layer is 0.1 μm or more, it is preferable to form sufficient protrusions. On the other hand, if it is 15 μm or less, productivity is good and is preferable.
[實施例] [Example]
以下,藉由實施例對本發明加以更詳細說明,但本發明不受這些實施例之任何限定。再者,實施例中之各種測定評價係藉由下述方法進行。 Hereinafter, the present invention will be described in more detail through examples, but the present invention is not limited to these examples in any way. In addition, various measurement evaluations in the Examples were performed by the following methods.
(1)全光線穿透率 (1) Total light transmittance
依據JIS-K7136-1:1997,使用日本電色工業股份有限公司製造之NDH-2000測定全光線穿透率。 According to JIS-K7136-1:1997, the total light transmittance was measured using NDH-2000 manufactured by Nippon Denshoku Industries Co., Ltd.
(2)表面電阻值 (2)Surface resistance value
依據JIS-K7194:1994利用四端子法進行測定。測定機係使用三菱化學分析科技(Mitsubishi Chemical Analytech)股份有限公司製造之Lotesta AX MCP-T370。 Measurement was performed using the four-terminal method in accordance with JIS-K7194:1994. The measuring machine uses Lotesta AX MCP-T370 manufactured by Mitsubishi Chemical Analytech Co., Ltd.
(3)三維中心面平均表面粗糙度SRa (3) Three-dimensional center surface average surface roughness SRa
三維中心面平均表面粗糙度SRa係由ISO(International Standard Organization;國際標準化組織)25178規定,使用三維表面形狀測定裝置VertScan(三菱化學系統(Mitsubishi Chemical System)公司製造,R5500H-M100(測定條件:波(wave)模式,測定波長560nm,物鏡10倍)),求出三維中心面平均表面粗糙度SRa。將測定數設為5,求出這些之平均值。此處,將奈米(nm)單位之小數點第一位加以四捨五入。 The three-dimensional center plane average surface roughness SRa is specified by ISO (International Standard Organization; International Organization for Standardization) 25178, using a three-dimensional surface shape measuring device VertScan (manufactured by Mitsubishi Chemical System), R5500H-M100 (measurement conditions: wave (wave) mode, measuring wavelength 560nm, objective lens 10x)), obtain the three-dimensional center plane average surface roughness SRa. The number of measurements was set to 5, and the average value was calculated. Here, the nanometer (nm) unit is rounded off to the first decimal place.
(4)晶粒徑 (4)Granule size
將積層有透明導電性薄膜層之膜片試片切出成1mm×10mm之大小,將導電性薄膜面設為向外而貼附於適當之樹脂塊的上表面。將該貼附所得之物品加以修整後,藉由通常之超薄切片機(ultramicrotome)之技術方法來製作幾乎平行於膜片表面之超薄切片。 Cut the film test piece laminated with the transparent conductive film layer into a size of 1 mm × 10 mm, and attach it to the upper surface of an appropriate resin block with the conductive film surface facing outward. After the attached article is trimmed, ultrathin slices almost parallel to the surface of the membrane are made using a conventional ultramicrotome technique.
利用穿透式電子顯微鏡(JEOL公司製造,JEM-2010)觀察該切片,選擇無明顯損傷之導電性薄膜表面部分,以加速電壓200kV、直接倍率40000倍進行照片拍攝。 The slice was observed using a transmission electron microscope (JEM-2010, manufactured by JEOL Corporation), and the surface portion of the conductive film without obvious damage was selected to take photos at an accelerating voltage of 200 kV and a direct magnification of 40,000 times.
於在穿透式電子顯微鏡下觀察到之晶粒中,測定所有晶粒的最長部,將這些測定值之平均值作為晶粒徑。此處,於圖1至圖4表示與測定晶粒的最長部時的最長部之認定方法有關之例。亦即,藉由最能將各晶粒之粒徑測定得最大的直線之長度來認定最長部。 Among the crystal grains observed under a transmission electron microscope, the longest part of all crystal grains was measured, and the average value of these measured values was taken as the crystal grain size. Here, an example related to the identification method of the longest part when measuring the longest part of a crystal grain is shown in FIG. 1 to FIG. 4 . That is, the longest part is determined by the length of the straight line that can best measure the particle diameter of each crystal grain.
(5)透明導電性膜之厚度(膜厚) (5) Thickness of transparent conductive film (film thickness)
將積層有透明導電性薄膜層之膜片試片切出成1mm×10mm之大小,包埋於電子顯微鏡用環氧樹脂。將該包埋所得之物品固定於超薄切片機之試樣固持器,而製作平行於所包埋之試片的短邊之剖面薄切片。繼而,於該切片之薄膜的無明顯損傷之部位,使用穿透式電子顯微鏡(JEOL公司製造,JEM-2010),以加速電壓200kV、亮視野且觀察倍率1萬倍來進行照片拍攝,根據所得之照片求出膜厚。 The film test piece laminated with the transparent conductive film layer was cut into a size of 1 mm × 10 mm and embedded in epoxy resin for electron microscopy. The embedded article is fixed to the sample holder of the ultramicrotome, and a cross-sectional thin section parallel to the short side of the embedded sample is made. Then, a transmission electron microscope (manufactured by JEOL, JEM-2010) was used to take pictures of the parts of the sliced film that had no obvious damage, with an acceleration voltage of 200 kV, a bright field, and an observation magnification of 10,000 times. According to the obtained Calculate the film thickness from the photo.
(6)筆滑動耐久性試驗 (6) Pen sliding durability test
使用本發明之透明導電性膜片作為其中一個面板用板,且使用在玻璃基板上以濺鍍法形成有由厚度為20nm之銦-錫複合氧化物薄膜(氧化錫含量:10質量%)所構成之透明導電性薄膜作為另一個面板用板。將該兩片面板用板以透明導電性薄膜呈互相對向之方式介由直徑30μm之環氧珠進行配置,而製作觸控面板。繼而,對聚縮醛製之筆(頂端之形狀:0.8mmR)施加5.0N之荷重,對觸控面板進行來回18萬次之直線滑動試驗。於該試驗中,對本發明之透明導電性膜片面施加筆之荷重。此時之滑動距離設為30mm,滑動速度設為180mm/s。於該滑動耐久性試驗後,測定以筆荷重0.8N按壓滑動部時之接通電阻(可動電極(膜片電極)與固定電極接觸時之電阻值)。接通電阻較佳為10kΩ以下。 The transparent conductive film of the present invention is used as one of the panel plates, and an indium-tin composite oxide film (tin oxide content: 10 mass%) with a thickness of 20 nm is formed on a glass substrate by a sputtering method. The transparent conductive film is used as another panel board. The two panel plates were arranged with transparent conductive films facing each other through epoxy beads with a diameter of 30 μm, to produce a touch panel. Then, a load of 5.0N was applied to the pen made of polyacetal (top shape: 0.8mmR), and the touch panel was subjected to a linear sliding test of 180,000 back and forth times. In this test, a pen load was applied to the surface of the transparent conductive film of the present invention. At this time, the sliding distance is set to 30mm and the sliding speed is set to 180mm/s. After the sliding durability test, the on-resistance (the resistance value when the movable electrode (diaphragm electrode) comes into contact with the fixed electrode) is measured when the sliding part is pressed with a pen load of 0.8N. The on-resistance is preferably 10kΩ or less.
再者,於比較例中,代替本發明之透明導電性膜片而使用各比較例中之膜片。 Furthermore, in the comparative examples, the film sheet in each comparative example was used instead of the transparent conductive film sheet of the present invention.
(7)筆重加壓試驗 (7) Pen weight pressure test
使用將本發明之透明導電性膜片切割成50mm×50mm而得之透明導電性膜片作為其中一個面板用板,且使用在玻璃基板上以濺鍍法形成有由厚度為20nm之銦-錫複合氧化物薄膜(氧化錫含量:10質量%)所構成之透明導電性薄膜作為另 一個面板用板。將該兩片面板用板以透明導電性薄膜呈互呈互相對向之方式介由直徑30μm之環氧珠進行配置,以厚度經調整成為120μm之雙面膠帶來貼附膜片側之面板用板與玻璃側之面板用板,而製作觸控面板。以聚縮醛製之筆(頂端之形狀0.8mmR)於距雙面膠帶的一端2.0mm之位置施加35N之荷重,平行於雙面膠帶進行10次(來回5次)直線滑動。於該試驗中,對本發明之透明導電性膜片面施加筆之荷重。此時之滑動距離設為30mm,滑動速度設為20mm/s。其中,於不存在環氧珠之位置進行滑動。於滑動後,取下透明導電性膜片,測定滑動部的任意五處之表面電阻(四端子法),得出平均值。於測定表面電阻時,於與滑動部成垂直之方向排列四端子,使滑動部來到第二端子與第三端子之間。將滑動部之表面電阻值之平均值除以未滑動部之表面電阻值(利用四端子法測定),算出表面電阻值之增加率。 A transparent conductive film obtained by cutting the transparent conductive film of the present invention into 50 mm × 50 mm is used as one of the panel plates, and an indium-tin layer with a thickness of 20 nm is formed on a glass substrate by sputtering. A transparent conductive film composed of a composite oxide film (tin oxide content: 10% by mass) is used as another A panel uses a board. The two panel plates are arranged with transparent conductive films facing each other through epoxy beads with a diameter of 30 μm, and a double-sided tape with a thickness adjusted to 120 μm is used to attach the panel plate on the diaphragm side. Use the panel with the glass side panel to make the touch panel. Use a polyacetal pen (top shape 0.8mmR) to apply a load of 35N at a position 2.0mm away from one end of the double-sided tape, and slide it in a straight line 10 times (5 times back and forth) parallel to the double-sided tape. In this test, a pen load was applied to the surface of the transparent conductive film of the present invention. At this time, the sliding distance is set to 30mm and the sliding speed is set to 20mm/s. Among them, slide in the position where there are no epoxy beads. After sliding, remove the transparent conductive film, measure the surface resistance at any five places on the sliding part (four-terminal method), and obtain the average value. When measuring the surface resistance, arrange the four terminals in a direction perpendicular to the sliding part so that the sliding part comes between the second terminal and the third terminal. Divide the average surface resistance value of the sliding part by the surface resistance value of the unsliding part (measured by the four-terminal method) to calculate the increase rate of the surface resistance value.
再者,於比較例中,代替本發明之透明導電性膜片,而使用各比較例中之膜片。 Furthermore, in the comparative examples, the films in each comparative example were used instead of the transparent conductive films of the present invention.
(8)透明導電性膜中所含的氧化錫之含有率之測定 (8) Measurement of tin oxide content in the transparent conductive film
切取試樣(約15cm2)放入至石英製三角燒瓶,添加6mol/l鹽酸20ml,進行膜片密封以使酸不揮發。於室溫一邊時常搖動一邊放置9天,使透明導電性膜溶解。取出殘膜片,以溶解了透明導電性膜之鹽酸作為測定液。溶解液中之In、Sn係使用ICP((Inductive Coupled Plasma;感應耦合電漿)發光分析裝置(廠商名:理學(Rigaku),裝置型號:CIROS-120 EOP)藉由校準曲線法而求出。各元素之測定波長係選擇無干涉且敏感度高之波長。另外,標準溶液係將市售之In、Sn之標準溶液加以稀釋來使用。 A sample (approximately 15 cm 2 ) was cut out and placed in a quartz Erlenmeyer flask, 20 ml of 6 mol/l hydrochloric acid was added, and a diaphragm was sealed to prevent the acid from volatilizing. Leave it at room temperature for 9 days while shaking frequently to dissolve the transparent conductive film. The remaining film piece was taken out, and hydrochloric acid in which the transparent conductive film was dissolved was used as a measurement solution. In and Sn in the solution were determined by the calibration curve method using an ICP (Inductive Coupled Plasma) luminescence analyzer (manufacturer name: Rigaku, device model: CIROS-120 EOP). The measurement wavelength of each element is a wavelength with no interference and high sensitivity. In addition, the standard solution is diluted with commercially available standard solutions of In and Sn.
(9)附著性試驗 (9) Adhesion test
依據JIS K5600-5-6:1999而實施。 Implemented in accordance with JIS K5600-5-6:1999.
(10)耐彎曲性試驗 (10)Bending resistance test
依據JIS K5600-5-1:1999而實施。其中,於在心軸直徑達到13mm之前未發生破裂或剝落之情形時,不進行進一步之耐彎曲試驗,全部記載為13mm。 Implemented in accordance with JIS K5600-5-1:1999. Among them, if no cracking or peeling occurs before the mandrel diameter reaches 13mm, no further bending resistance test will be performed, and all values will be recorded as 13mm.
實施例、比較例中使用之透明塑膠膜片基材為於兩面具有易接著層之雙軸配向透明PET(Polyethylene terephthalate;聚對苯二甲酸乙二酯)膜片(東洋紡公司製造,A4340,厚度記載於表1)。於作為硬化型樹脂層的含有光聚合起始劑之丙烯酸系樹脂(大日精化工業公司製造,Seikabeam(註冊商標)EXF-01J)100質量份中,以表1所記載之量調配二氧化矽粒子(日產化學公司製造,Snowtex ZL),以固形物濃度成為50質量%之方式添加作為溶劑之甲苯/MEK(質量比:8/2)之混合溶媒,進行攪拌而均勻溶解,製備塗佈液(以下將該塗佈液稱為塗佈液A)。以塗膜之厚度成為5μm之方式使用邁耶棒(Mayer Rod)來塗佈所製備之塗佈液。於80℃進行1分鐘乾燥後,使用紫外線照射裝置(Eyegraphics公司製造,UB042-5AM-W型)照射紫外線(光量:300mJ/cm2),使塗膜硬化。另外,硬化型樹脂層係設於透明塑膠基材的兩面。 The transparent plastic film base material used in the Examples and Comparative Examples is a biaxially aligned transparent PET (Polyethylene terephthalate; polyethylene terephthalate) film with easily adhesive layers on both sides (manufactured by Toyobo Co., Ltd., A4340, thickness Recorded in Table 1). To 100 parts by mass of an acrylic resin containing a photopolymerization initiator (Seikabeam (registered trademark) EXF-01J manufactured by Dainichi Seika Industrial Co., Ltd.) as a curable resin layer, silica was prepared in an amount described in Table 1 To the particles (Snowtex ZL manufactured by Nissan Chemical Co., Ltd.), a mixed solvent of toluene/MEK (mass ratio: 8/2) as a solvent was added so that the solid concentration became 50% by mass, and stirred to uniformly dissolve, and a coating liquid was prepared. (Hereinafter, this coating liquid will be referred to as coating liquid A). The prepared coating liquid was applied using a Mayer Rod so that the thickness of the coating film became 5 μm. After drying at 80° C. for 1 minute, ultraviolet rays (light quantity: 300 mJ/cm 2 ) were irradiated using an ultraviolet irradiation device (UB042-5AM-W type manufactured by Eyegraphics) to harden the coating film. In addition, the hardening resin layer is provided on both sides of the transparent plastic base material.
[實施例1至實施例8] [Example 1 to Example 8]
各實施例水準係基於表1所示之條件如以下方式實施。 Each example level was implemented in the following manner based on the conditions shown in Table 1.
將膜片投入至真空槽,抽真空直至1.5×10-4Pa為止。繼而,導入氧氣後以表1所記載之濃度導入作為惰性氣體之氬氣、作為含氫氣體之氫氣,將總壓設為0.6Pa。 Put the diaphragm into the vacuum tank and evacuate it until it reaches 1.5×10 -4 Pa. Next, after introducing oxygen, argon gas as an inert gas and hydrogen gas as a hydrogen-containing gas were introduced at the concentrations listed in Table 1, and the total pressure was set to 0.6 Pa.
以3W/cm2之電力密度對銦-錫複合氧化物之燒結靶、或不含氧化錫之氧化銦燒結靶投入電力,以DC(Direct Current;直流)磁控濺鍍法形成透明導電性膜。 關於膜厚,係由改變膜片於靶上通過時之速度來進行控制。另外,關於濺鍍時之成膜氛圍的水分壓相對於惰性氣體之比,使用氣體分析裝置(英福康(Inficon)公司製造,Transpector XPR3)進行測定。於各實施例水準中,為了調節濺鍍時之成膜氛圍的水分壓相對於惰性氣體之比,而如表1所記載,調節衝擊步驟之有無、膜輥端面之凹凸高低差、對膜片接觸行進之中心輥之溫度進行控制的調溫機之溫媒之溫度。將自對膜輥進行成膜開始時到成膜結束時為止的溫度之最大值與最小值的相當於正中間之溫度作為中心值而記載於表1。 Apply power to a sintered target of indium-tin composite oxide or an indium oxide sintered target that does not contain tin oxide at a power density of 3W/ cm2 , and form a transparent conductive film by DC (Direct Current; DC) magnetron sputtering method. . The film thickness is controlled by changing the speed at which the diaphragm passes over the target. In addition, the ratio of the water pressure of the film-forming atmosphere to the inert gas during sputtering was measured using a gas analyzer (Transpector XPR3, manufactured by Inficon). In each example level, in order to adjust the ratio of the water pressure of the film-forming atmosphere to the inert gas during sputtering, as recorded in Table 1, the presence or absence of the impact step, the unevenness of the end face of the film roller, and the impact on the film were adjusted. The temperature of the temperature medium of the temperature regulating machine is controlled by the temperature of the moving central roller. The temperature corresponding to the middle point between the maximum value and the minimum value of the temperature from the start of film formation to the end of film formation on the film roll was recorded in Table 1 as the center value.
成膜積層有透明導電性膜之膜片係於進行表1所記載之熱處理後,實施測定。將測定結果示於表1。 The film sheet on which the transparent conductive film was laminated was subjected to the heat treatment described in Table 1 and then measured. The measurement results are shown in Table 1.
[比較例1至比較例8] [Comparative Example 1 to Comparative Example 8]
以表1所記載之條件,與實施例1同樣地製作透明導電性膜片並進行評價。其中,比較例7係不設置硬化型樹脂層。其中,比較例8係以硬化型樹脂層之塗膜之厚度成為20μm之方式調整。將結果示於表2。 Under the conditions described in Table 1, a transparent conductive film was produced and evaluated in the same manner as in Example 1. Among them, Comparative Example 7 does not provide a curable resin layer. Among them, Comparative Example 8 was adjusted so that the thickness of the coating film of the curable resin layer became 20 μm. The results are shown in Table 2.
RF濺鍍之導入氣體量係與導入至真空裝置的實施例所記載之氣體量相同。 The amount of gas introduced in RF sputtering is the same as the amount of gas introduced into the vacuum device described in the Example.
RF濺鍍之導入氣體量係與導入至真空裝置的實施例所記載之氣體量相同。 The amount of gas introduced in RF sputtering is the same as the amount of gas introduced into the vacuum device described in the Example.
如表1A、表1B所記載,實施例1至實施例8所記載之透明導電性膜片係筆滑動耐久性及筆重加壓耐久性優異,兼具兩特性。然而,如表2所記載,比較例1至比較例8係無法兼具筆滑動耐久性及筆重加壓耐久性。 As described in Table 1A and Table 1B, the transparent conductive films described in Examples 1 to 8 are excellent in pen sliding durability and pen heavy pressure durability, and have both characteristics. However, as shown in Table 2, Comparative Examples 1 to 8 were unable to achieve both pen sliding durability and pen heavy pressure durability.
[產業可利用性] [Industrial Availability]
如上文所述,根據本發明,能夠製作筆滑動耐久性及筆重加壓耐久性優異之透明導電性膜片,該透明導電性膜片於電阻膜式觸控面板等之用途中極為有用。 As described above, according to the present invention, a transparent conductive film excellent in pen sliding durability and pen heavy pressure durability can be produced. This transparent conductive film is extremely useful in applications such as resistive film type touch panels.
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TW201801098A (en) * | 2016-01-20 | 2018-01-01 | 日商東洋紡股份有限公司 | Transparent conductive film |
WO2018163884A1 (en) * | 2017-03-10 | 2018-09-13 | コニカミノルタ株式会社 | Transparent electrode substrate film and method for producing same |
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TW201801098A (en) * | 2016-01-20 | 2018-01-01 | 日商東洋紡股份有限公司 | Transparent conductive film |
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