TW202307873A - transparent conductive film - Google Patents

transparent conductive film Download PDF

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TW202307873A
TW202307873A TW111122987A TW111122987A TW202307873A TW 202307873 A TW202307873 A TW 202307873A TW 111122987 A TW111122987 A TW 111122987A TW 111122987 A TW111122987 A TW 111122987A TW 202307873 A TW202307873 A TW 202307873A
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transparent conductive
conductive film
film
height
formula
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TW111122987A
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多多見央
高橋知大
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日商東洋紡股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04Coating
    • C08J7/044Forming conductive coatings; Forming coatings having anti-static properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • B32B7/025Electric or magnetic properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04Coating
    • C08J7/043Improving the adhesiveness of the coatings per se, e.g. forming primers
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/045Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

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  • Laminated Bodies (AREA)

Abstract

The purpose of the present invention is to provide a transparent conductive film that has excellent input stability and suitable-input strength. A transparent conductive film according to the present invention has a transparent conductive membrane of an indium-tin complex oxide laminated on at least one surface of a transparent plastic film base material, and exhibits an input initial load of more than 15g but not more than 25g and a voltage loss time of 0.00-0.40 msec. Preferably, the transparent conductive film has a film bending resistance (BR) of 0.38-0.90 N·cm, and has an average (AVSp), of maximum peak height Sp in an electrically conductive surface, satisfying formula (2-1). Formula (2-1): 4.7*BR-3.6 ≤ AVSp < 4.7*BR-1.8 (in the formula, BR represents the film bending resistance (N·cm), and AVSp represents the average maximum peak height ([mu]m)).

Description

透明導電性薄膜transparent conductive film

本發明係關於在透明塑膠薄膜基材上積層有銦-錫複合氧化物的透明導電膜的透明導電性薄膜的發明。The present invention relates to a transparent conductive film in which a transparent conductive film of indium-tin composite oxide is laminated on a transparent plastic film substrate.

在透明塑膠基材上積層有透明且電阻小的薄膜的透明導電性薄膜係廣泛用於利用其導電性的用途上,例如,作為液晶顯示器、電致發光(EL)顯示器等之類的平面顯示器、觸控面板的透明電極等而廣泛用於電器•電子領域的用途上。A transparent conductive film in which a transparent and low-resistance film is laminated on a transparent plastic substrate is widely used in applications utilizing its conductivity, for example, as flat-panel displays such as liquid crystal displays and electroluminescence (EL) displays. , transparent electrodes of touch panels, etc., and are widely used in the fields of electric appliances and electronics.

電阻膜式觸控面板係組合了將透明導電性薄膜塗布(coating)在玻璃、塑膠的基板的固定電極、和在塑膠薄膜塗布透明導電性薄膜的可動電極(可稱為薄膜電極)者,將其重疊在顯示體的上側來使用。若用手指、筆按壓薄膜電極(稱為輸入),則固定電極和薄膜電極的透明導電性薄膜彼此接觸,而辨識出輸入位置。The resistive film type touch panel is a combination of a fixed electrode coated with a transparent conductive film on a glass or plastic substrate, and a movable electrode (which can be called a thin film electrode) coated with a transparent conductive film on a plastic film. It is used by being superimposed on the upper side of the display body. When the thin-film electrode is pressed with a finger or a pen (referred to as input), the fixed electrode and the transparent conductive film of the thin-film electrode come into contact with each other, and the input position is recognized.

在專利文獻1中,揭示了一種觸控面板用透明導電積層體,其係在高分子薄膜的至少一面積層實質上主要包含結晶質的氧化銦的透明導電膜而成者。要藉由將氧化銦結晶化來提高筆記耐久性。 [先前技術文獻] [專利文獻] Patent Document 1 discloses a transparent conductive laminate for a touch panel in which at least one surface layer of a polymer film substantially mainly includes a transparent conductive film of crystalline indium oxide. To improve note durability by crystallizing indium oxide. [Prior Art Literature] [Patent Document]

[專利文獻1]日本特開2004-071171號公報[Patent Document 1] Japanese Unexamined Patent Publication No. 2004-071171

[發明欲解決之課題][Problem to be solved by the invention]

在觸控面板方面,要求即使連續地用筆進行輸入,對於透明導電膜,也不會發生破裂、剝離、磨耗等的特性(筆滑動耐久性)。 此外,在觸控面板方面,要求輸入強度的適度的範圍(適性輸入強度)。例如,在用手指、筆等按壓薄膜電極,以使固定電極和薄膜電極的透明導電性薄膜彼此接觸時,有手、衣袖誤觸了觸控面板的情形,有在對觸摸的場所的選擇上感到猶豫時用筆等誤觸了觸控面板的情形。理想的是因這種意外接觸到觸控面板所造成的輸入少(錯誤輸入防止性)。但是,若使錯誤輸入防止性提高,則有舒適輸入性降低的傾向。舒適輸入性係指在用筆、手指等對電阻膜式觸控面板進行輸入時,即使並未有意識地用力施壓,也可以進行輸入。要求兼顧錯誤輸入防止和舒適輸入性。 In the touch panel, even if input is continuously performed with a pen, characteristics such as cracking, peeling, and abrasion do not occur in the transparent conductive film (pen sliding durability) are required. In addition, in touch panels, an appropriate range of input strength (adaptive input strength) is required. For example, when pressing the film electrode with a finger, pen, etc., so that the transparent conductive film of the fixed electrode and the film electrode contacts each other, there is a situation where the hand or sleeve accidentally touches the touch panel. Touch the touch panel by mistake with a pen etc. while feeling hesitant on the screen. It is desirable that the number of inputs due to such accidental touch on the touch panel be small (wrong input prevention). However, if the erroneous input prevention property is improved, the comfortable input property tends to decrease. Comfortable input performance means that when inputting with a pen, finger, etc. on a resistive film touch panel, input can be performed even if no force is applied consciously. Both prevention of wrong input and comfortable input are required.

另外,在觸控面板方面,要求優異的輸入穩定性,即在從用筆等碰觸觸控面板到離開的期間內,對觸控面板的輸入穩定。例如,要求能夠減少會在連續輸入文字之際發生的文字模糊(快速書寫性)、不會使文字的捺型筆劃部分變模糊(捺型筆劃輸入性)等優異。 在專利文獻1的技術中,在未將氧化銦結晶化的情況下無法提高筆滑動耐久性。此外,包含專利文獻1在內的現有的透明導電性薄膜係適性輸入強度(錯誤輸入防止性、舒適輸入性)、輸入穩定性(快速書寫性、捺型筆劃輸入性)等也是不充分的。 In addition, in terms of touch panels, excellent input stability is required, that is, stable input to the touch panel is required from when the touch panel is touched with a pen or the like to when it is released. For example, it is required to be able to reduce the blurring of characters that occurs when continuously inputting characters (fast writing performance), and to prevent blurring of the swiping strokes of characters (swiping stroke input performance). In the technique of Patent Document 1, the pen sliding durability cannot be improved without crystallizing indium oxide. In addition, conventional transparent conductive film systems including Patent Document 1 are insufficient in terms of input strength (wrong input prevention, comfortable input), input stability (fast writing, swiping stroke input), and the like.

由此,本發明的目的在於提供適性輸入強度及輸入穩定性優異的透明導電性薄膜。此外,本發明的較佳的目的在於提供進一步具有筆滑動耐久性的透明導電性薄膜。 [用以解決課題之手段] Accordingly, an object of the present invention is to provide a transparent conductive film excellent in adaptive input strength and input stability. In addition, a preferable object of the present invention is to provide a transparent conductive film further having pen sliding durability. [Means to solve the problem]

本發明係有鑑於如上述狀況所完成的發明,能夠解決上述課題的本發明的透明導電性薄膜係包含以下的構成。 [1]一種透明導電性薄膜,其係在透明塑膠薄膜基材上的至少一面積層有銦-錫複合氧化物的透明導電膜的透明導電性薄膜, 以試驗方法1所求出的輸入開始荷重係大於15g並為25g以下, 以試驗方法2所求出的電壓損失時間係0.00毫秒以上0.40毫秒以下。 [試驗方法1] 在玻璃基板的單面形成厚度為20nm的銦-錫複合氧化物導電膜(氧化錫含量:10質量%),在該薄膜的表面,以4mm間距將環氧樹脂的點狀間隙物(縱60μm×橫60μm×高5μm)形成為正方格子狀而作為面板板。在此面板板的導電膜側,夾著厚度為105μm、內周為190mm×135mm的有接著性的矩形框,同時以導電膜彼此面對面的方式重疊透明導電性薄膜而製作評價面板。從此評價面板的透明導電性薄膜側,用前端為半徑0.8mm半球狀的聚縮醛的筆持續按壓點狀間隙物的4點格子的中心,將電阻值開始穩定時的壓力設為輸入開始荷重。 [試驗方法2] 將前述評價面板連接於6V的定電壓電源,從透明導電性薄膜側,使用前端為半徑0.8mm半球狀的筆,以50gf的荷重,以5次/秒的間隔按壓點狀間隙物的4點格子的中心。以筆開始離開透明導電性薄膜,電壓從6V開始減少時為起點,測定到電壓成為5V為止的時間,設為電壓損失時間。 [2]如[1]的透明導電性薄膜,其中以試驗方法3所求出的薄膜剛軟度(BR)係0.38N.cm以上0.90N.cm以下, 以試驗方法4所求出的導電面的最大山高Sp的平均(AVSp)滿足下述式(2-1)及式(2-2), 以試驗方法5所求出的接觸面積率(CA)滿足下述式(2-3)。 4.7×BR-3.6≦AVSp<4.7×BR-1.8...式(2-1) 0.005≦AVSp≦12.000...式(2-2) CA≧32.6×BR+17.2...式(2-3) (式中,BR係薄膜剛軟度(N.cm),AVSp係平均最大山高(μm),CA係接觸面積率(%)) [試驗方法3] 使透明導電膜朝上地將20mm×250mm的透明導電性薄膜試驗片放置於水平台上,使試驗片從水平台的端點突出230mm的長度,基於下述式決定剛軟度(BR)。 剛軟度(BR(N.cm))=g×a×b×L 4/(8×δ×10 11) (式中,g係9.81(重力加速度;m/s 2),a係20(試驗片的短邊的長度;mm),b表示試驗片的比重(g/cm 3),L係230(露出在水平台之外的試驗片的長邊的長度;mm),δ表示試驗片前端的高度和水平台的高度的差(cm)) [試驗方法4] 在透明導電性薄膜的導電面上,在MD方向上以1cm間隔決定出3點,從其中心起以1cm間隔、在TD方向上對稱地決定出2點,合計5點的測定點,在各地方測定基於面粗糙度的最大山高Sp(根據ISO 25178),將其平均值設為平均最大山高(AVSp)(μm)。 [試驗方法5] 針對透明導電性薄膜的導電面,測定基於線粗糙度的平均高度Rc(μm)、最大山高Rp(μm)、及平均長度Rsm(μm),在滿足式(X1)及式(X2)中的至少一者和式(X3)的場所,測定基於線粗糙度的算術平均高度Ra(μm)。又,平均高度Rc(μm)、最大山高Rp(μm)、平均長度Rsm(μm)、及算術平均高度Ra(μm)係使用3維表面形狀測定裝置VertScan(菱化System公司製,R5500H-M100(測定條件:wave模式,測定波長560nm,物鏡50倍))來決定。最大山高Rp(μm)、平均長度Rsm(μm)、及算術平均高度Ra(μm)的決定係遵照JIS B 0601-2001的規定。算術平均高度Ra(μm)的測定長度設為100μm以上200μm以下。 Rp-Rc-Ra≦0.20...式(X1) (Rp-Rc)/Ra≦5.0...式(X2) Rsm≦30...式(X3) 將前述3維表面形狀測定裝置VertScan的物鏡變更為10倍,使用同測定裝置所具有的粒子解析,在離平均面達到「算術平均高度Ra(μm)-15×10 -3(μm)-平均高度Rc(μm)」的高度處,在平面方向上進行截切(slice),求出截面積的總和。將以下的值設為接觸面積率(CA)(%):將截面積的總和除以測定視野的面積的值乘以100。 [3]如[2]的透明導電性薄膜,其中以前述試驗方法4所求出的最大山高Sp的最大值MXSp係超過前述平均最大山高AVSp的1.0倍並為1.4倍以下,且 以前述試驗方法4所求出的最大山高Sp的最小值MNSp係前述平均最大山高AVSp的0.6倍以上1.0倍以下。 [4]如[1]至[3]中任一項的透明導電性薄膜,其中前述透明導電膜的厚度為10nm以上100nm以下。 [5]如[1]至[4]中任一項的透明導電性薄膜,其中前述透明導電膜中所含的氧化錫的濃度為0.5質量%以上40質量%以下。 [6]如[1]至[5]中任一項的透明導電性薄膜,其中在透明導電膜與透明塑膠薄膜基材之間,具有硬化型樹脂層, 進一步在透明塑膠基材的與前述透明導電膜為相反的側,具有功能層。 [7]如[1]至[6]中任一項的透明導電性薄膜,其中在透明塑膠薄膜基材的至少一側具有易接著層。 [8]如[7]的透明導電性薄膜,其中易接著層係配置在透明塑膠薄膜基材與硬化型樹脂層之間、或透明塑膠基材與功能層之間中的至少一個位置。 [9]如[1]至[8]中任一項的透明導電性薄膜,其中以試驗方法6所規定的ON電阻為10kΩ以下。 [試驗方法6] 隔著直徑30μm的環氧珠粒,以導電膜彼此面對面的方式重疊在玻璃基板的單面形成了厚度為20nm的銦-錫複合氧化物導電膜(氧化錫含量:10質量%)的面板板、和透明導電性薄膜而作成評價面板。在此評價面板的透明導電性薄膜側,用前端為半徑0.8mm半球狀的聚縮醛的筆一邊施加2.5N的荷重,一邊進行滑動(來回次數5萬次,滑動距離30mm,滑動速度180mm/秒)。滑動後,用0.8N的筆荷重按住滑動部,測定電性連接時的電阻(ON電阻)。 [10]如[1]至[9]中任一項的透明導電性薄膜,其中在透明導電膜的表面上的根據JIS K5600-5-6:1999的附著性試驗中,透明導電膜的殘留面積率為95%以上。 [發明之效果] The present invention is made in view of the above-mentioned situation, and the transparent conductive film of the present invention that can solve the above-mentioned problems includes the following configurations. [1] A transparent conductive film, which is a transparent conductive film with a transparent conductive film of indium-tin composite oxide on at least one area layer on a transparent plastic film substrate, and the input load obtained by test method 1 It is more than 15g and less than 25g, and the voltage loss time obtained by the test method 2 is not less than 0.00 milliseconds and not more than 0.40 milliseconds. [Test method 1] Form an indium-tin composite oxide conductive film (tin oxide content: 10% by mass) with a thickness of 20 nm on one side of a glass substrate, and place dots of epoxy resin on the surface of the film at a pitch of 4 mm. The spacers (60 μm in length×60 μm in width×5 μm in height) were formed in a square lattice shape as a panel board. On the conductive film side of this panel board, an adhesive rectangular frame with a thickness of 105 μm and an inner circumference of 190 mm×135 mm was interposed, and transparent conductive films were stacked so that the conductive films faced each other to prepare an evaluation panel. From the transparent conductive film side of the evaluation panel, continuously press the center of the 4-point grid of dot-shaped spacers with a polyacetal pen whose tip is hemispherical with a radius of 0.8 mm, and set the pressure at which the resistance value starts to stabilize as the input start load . [Test method 2] Connect the above-mentioned evaluation panel to a constant voltage power supply of 6V, and use a pen with a hemispherical tip with a radius of 0.8mm from the side of the transparent conductive film to press the dot shape with a load of 50gf at intervals of 5 times/second. The center of the 4-point grid of the interstitial. Starting from the time when the pen started to separate from the transparent conductive film and the voltage began to decrease from 6V, the time until the voltage reached 5V was measured, and it was defined as the voltage loss time. [2] The transparent conductive film as in [1], wherein the rigidity (BR) of the film obtained by test method 3 is 0.38N. 0.90N above cm. cm or less, the average (AVSp) of the maximum peak height Sp of the conductive surface obtained by test method 4 satisfies the following formula (2-1) and formula (2-2), and the contact area ratio obtained by test method 5 (CA) satisfies the following formula (2-3). 4.7×BR-3.6≦AVSp<4.7×BR-1.8. . . Formula (2-1) 0.005≦AVSp≦12.000. . . Formula (2-2) CA≧32.6×BR+17.2. . . Formula (2-3) (In the formula, the stiffness and softness of the BR series film (N.cm), the average maximum mountain height of the AVSp series (μm), and the contact area ratio of the CA series (%)) [Test method 3] Make the transparent conductive film toward Put a 20 mm x 250 mm transparent conductive film test piece on a horizontal platform, make the test piece protrude from the end point of the horizontal platform by a length of 230 mm, and determine the rigidity (BR) based on the following formula. Rigidity (BR(N.cm))=g×a×b×L 4 /(8×δ×10 11 ) (where g is 9.81 (gravitational acceleration; m/s 2 ), a is 20( The length of the short side of the test piece; mm), b represents the specific gravity of the test piece (g/cm 3 ), L is 230 (the length of the long side of the test piece exposed outside the horizontal platform; mm), δ represents the test piece The difference between the height of the front end and the height of the horizontal platform (cm) [Test method 4] On the conductive surface of the transparent conductive film, three points are determined at intervals of 1 cm in the MD direction, and at intervals of 1 cm from the center, on the Determining 2 points symmetrically in the TD direction, a total of 5 measurement points, measuring the maximum peak height Sp (according to ISO 25178) based on the surface roughness at each place, and taking the average value as the average maximum peak height (AVSp) (μm) . [Test method 5] For the conductive surface of the transparent conductive film, measure the average height Rc (μm), the maximum peak height Rp (μm), and the average length Rsm (μm) based on the line roughness, and satisfy the formula (X1) and the formula At least one of (X2) and the place of formula (X3) measured the arithmetic mean height Ra (micrometer) based on the line roughness. Also, the average height Rc (μm), the maximum mountain height Rp (μm), the average length Rsm (μm), and the arithmetic mean height Ra (μm) were measured using a three-dimensional surface shape measuring device VertScan (manufactured by Ryoka System Co., Ltd., R5500H-M100 (Measurement conditions: wave mode, measurement wavelength 560nm, objective lens 50 times)) to determine. The maximum mountain height Rp (μm), the average length Rsm (μm), and the arithmetic mean height Ra (μm) are determined in accordance with the provisions of JIS B 0601-2001. The measurement length of arithmetic mean height Ra (micrometer) shall be 100 micrometers or more and 200 micrometers or less. Rp-Rc-Ra≦0.20. . . Formula (X1) (Rp-Rc)/Ra≦5.0. . . Formula (X2) Rsm≦30. . . Formula (X3) changes the objective lens of the VertScan 3D surface shape measurement device to 10 times, and uses the particle analysis of the same measurement device to achieve "arithmetic mean height Ra(μm)-15×10 -3 ( μm)-average height Rc(μm)”, slice in the plane direction and calculate the sum of the cross-sectional areas. The value obtained by dividing the sum of the cross-sectional areas by the area of the measurement field of view was multiplied by 100 as the contact area ratio (CA) (%). [3] The transparent conductive film according to [2], wherein the maximum value MXSp of the maximum peak height Sp obtained by the aforementioned test method 4 is more than 1.0 times and not more than 1.4 times the aforementioned average maximum peak height AVSp, and is determined by the aforementioned test method. The minimum value MNSp of the maximum mountain height Sp obtained by the method 4 is 0.6 to 1.0 times the above-mentioned average maximum mountain height AVSp. [4] The transparent conductive film according to any one of [1] to [3], wherein the transparent conductive film has a thickness of not less than 10 nm and not more than 100 nm. [5] The transparent conductive film according to any one of [1] to [4], wherein the concentration of tin oxide contained in the transparent conductive film is not less than 0.5% by mass and not more than 40% by mass. [6] The transparent conductive film according to any one of [1] to [5], wherein there is a curable resin layer between the transparent conductive film and the transparent plastic film substrate, and further between the transparent plastic substrate and the aforementioned The transparent conductive film is on the opposite side and has a functional layer. [7] The transparent conductive film according to any one of [1] to [6], which has an easy-adhesive layer on at least one side of the transparent plastic film substrate. [8] The transparent conductive film according to [7], wherein the easy-adhesive layer is disposed at least one of between the transparent plastic film substrate and the curable resin layer, or between the transparent plastic substrate and the functional layer. [9] The transparent conductive film according to any one of [1] to [8], wherein the ON resistance specified by Test Method 6 is 10 kΩ or less. [Test method 6] An indium-tin composite oxide conductive film with a thickness of 20 nm (tin oxide content: 10 mass %)) and a transparent conductive film to make an evaluation panel. On the transparent conductive film side of the evaluation panel, a pen with a hemispherical polyacetal pen with a radius of 0.8 mm was used to slide while applying a load of 2.5 N (50,000 times of back and forth, sliding distance 30 mm, sliding speed 180 mm/ Second). After sliding, the sliding part was pressed with a pen load of 0.8N, and the resistance (ON resistance) at the time of electrical connection was measured. [10] The transparent conductive film according to any one of [1] to [9], wherein in the adhesion test according to JIS K5600-5-6:1999 on the surface of the transparent conductive film, the residue of the transparent conductive film The area rate is above 95%. [Effect of Invention]

若根據本發明的話,便能夠提供適性輸入強度及輸入穩定性優異的透明導電性薄膜。此外,若根據本發明的話,則在較佳的情況下,便能夠提供進一步還具有筆滑動耐久性的透明導電性薄膜。According to the present invention, it is possible to provide a transparent conductive film excellent in adaptive input strength and input stability. In addition, according to the present invention, in a preferable case, it is possible to provide a transparent conductive film further having pen sliding durability.

[用以實施發明的形態][Mode for Carrying Out the Invention]

1.透明導電性薄膜 本發明的透明導電性薄膜係在透明塑膠薄膜基材上的至少一面積層有銦-錫複合氧化物的透明導電膜的透明導電性薄膜。藉由在表面具有透明導電膜,能夠廣泛用於利用其導電性的用途上,例如,能夠作為液晶顯示器、電致發光(EL)顯示器等之類的平面顯示器、觸控面板的透明電極等而廣泛用於電器•電子領域的用途上。透明導電性薄膜的具體的層構成,能夠適宜設定,例如,能夠例示圖1、圖2、圖3、圖4等的概略側面圖所示的構成。 1. Transparent conductive film The transparent conductive film of the present invention is a transparent conductive film in which a transparent conductive film of indium-tin composite oxide is layered on at least one area of a transparent plastic film substrate. By having a transparent conductive film on the surface, it can be widely used in applications that utilize its conductivity, for example, it can be used as a transparent electrode of a liquid crystal display, an electroluminescent (EL) display, etc., a transparent electrode of a touch panel, etc. Widely used in electrical and electronic fields. The specific layer configuration of the transparent conductive thin film can be appropriately set, and for example, configurations shown in schematic side views such as FIG. 1 , FIG. 2 , FIG. 3 , and FIG. 4 can be exemplified.

圖1的透明導電性薄膜係在透明塑膠薄膜基材7的單面,隔著硬化型樹脂層6形成有透明導電膜5,在透明塑膠薄膜基材7的相反面形成有功能層8。若在透明導電膜5與透明塑膠薄膜基材7之間形成硬化型樹脂層6,便能夠阻擋單體、寡聚物從透明塑膠薄膜基材7析出至透明導電膜5上。本發明的透明導電性薄膜,藉由控制後述的輸入開始荷重、電壓損失時間,提高了適性輸入強度、輸入穩定性,藉由阻擋寡聚物的析出,進一步改善適性輸入強度、輸入穩定性。此外,藉由利用硬化型樹脂層6、功能層8來防止單體、寡聚物的析出,能夠進一步提高透明導電性薄膜的透明性、可見度。另外,藉由具有硬化型樹脂層6及/或功能層8,能夠調整後述的透明導電性薄膜的剛軟度。又,依透明塑膠薄膜基材的剛性而定,未必需要硬化型樹脂層6及/或功能層8。The transparent conductive film of FIG. 1 is formed on one side of a transparent plastic film substrate 7 with a transparent conductive film 5 interposed therebetween a curable resin layer 6 , and a functional layer 8 is formed on the opposite surface of the transparent plastic film substrate 7 . If the curable resin layer 6 is formed between the transparent conductive film 5 and the transparent plastic film substrate 7 , it can prevent monomers and oligomers from being separated from the transparent plastic film substrate 7 onto the transparent conductive film 5 . The transparent conductive film of the present invention improves the adaptive input strength and input stability by controlling the input start load and voltage loss time described later, and further improves the adaptive input strength and input stability by preventing the precipitation of oligomers. In addition, by preventing the precipitation of monomers and oligomers by using the curable resin layer 6 and the functional layer 8, the transparency and visibility of the transparent conductive film can be further improved. In addition, by having the curable resin layer 6 and/or the functional layer 8, the rigidity and softness of the transparent conductive film described later can be adjusted. Also, depending on the rigidity of the transparent plastic film substrate, the curable resin layer 6 and/or the functional layer 8 are not necessarily required.

在一態樣中,本發明的透明導電性薄膜係在透明塑膠薄膜基材的至少一側積層易接著層。例如,可以如圖2所示,硬化型樹脂層6和透明塑膠薄膜基材7係以易接著劑層9接著。也可以如圖3所示,功能層8和透明塑膠薄膜基材7係以易接著劑層9接著。也可以如圖4所示,硬化型樹脂層6及功能層8係分別和透明塑膠薄膜基材7以易接著劑層9接著。藉由有易接著劑層9,能夠更有效地抑制硬化型樹脂層6及/或功能層8因外力而從透明塑膠薄膜基材7剝落。In one aspect, the transparent conductive film of the present invention is laminated with an easy-adhesive layer on at least one side of the transparent plastic film substrate. For example, as shown in FIG. 2 , the curable resin layer 6 and the transparent plastic film substrate 7 are bonded with an easy adhesive layer 9 . Alternatively, as shown in FIG. 3 , the functional layer 8 and the transparent plastic film substrate 7 are bonded with an easy-adhesive layer 9 . Alternatively, as shown in FIG. 4 , the curable resin layer 6 and the functional layer 8 are respectively bonded to the transparent plastic film substrate 7 with an easy-adhesive layer 9 . The presence of the easy-adhesive layer 9 can more effectively prevent the hardening resin layer 6 and/or the functional layer 8 from peeling off from the transparent plastic film substrate 7 due to external force.

本發明的透明導電性薄膜,其特徵(特徵1)在於以試驗方法1所求出的輸入開始荷重係大於15g並為25g以下。藉由使輸入開始荷重成為既定值以下,能夠提高舒適輸入性。The transparent conductive film of the present invention is characterized (feature 1) in that the initial input load obtained by Test Method 1 is greater than 15 g and not more than 25 g. Comfortable input performance can be improved by reducing the input start load to a predetermined value or less.

[試驗方法1] 在玻璃基板的單面形成厚度為20nm的銦-錫複合氧化物導電膜(氧化錫含量:10質量%),在該薄膜的表面,以4mm間距將環氧樹脂的點狀間隙物(縱60μm×橫60μm×高5μm)形成為正方格子狀而作為面板板。在此面板板的導電膜側,夾著厚度為105μm、內周為190mm×135mm的有接著性的矩形框,同時以導電膜彼此面對面的方式重疊透明導電性薄膜而製作評價面板。從此評價面板的透明導電性薄膜側,用前端為半徑0.8mm半球狀的聚縮醛的筆持續按壓點狀間隙物的4點格子的中心,將電阻值開始穩定時的壓力設為輸入開始荷重。此處,所謂的「穩定的電阻值」意指例如電阻值在平均值±5%的範圍內變動的狀態。 [Test method 1] On one side of the glass substrate, an indium-tin composite oxide conductive film (tin oxide content: 10% by mass) was formed with a thickness of 20 nm, and dot-shaped spacers (60 μm in length) of epoxy resin were placed on the surface of the film at a pitch of 4 mm. × 60 μm in width × 5 μm in height) was formed in a square lattice shape as a panel board. On the conductive film side of this panel board, an adhesive rectangular frame with a thickness of 105 μm and an inner circumference of 190 mm×135 mm was interposed, and transparent conductive films were stacked so that the conductive films faced each other to prepare an evaluation panel. From the transparent conductive film side of the evaluation panel, continuously press the center of the 4-point grid of dot-shaped spacers with a polyacetal pen whose tip is hemispherical with a radius of 0.8 mm, and set the pressure at which the resistance value starts to stabilize as the input start load . Here, the "stable resistance value" means, for example, a state in which the resistance value fluctuates within the range of ±5% of the average value.

此外,前述透明導電性薄膜,其特徵(特徵2)在於以試驗方法2所求出的電壓損失時間係0.00毫秒以上0.40毫秒以下。藉由電壓損失時間在既定範圍內,能夠使電性穩定的接觸時間變得更長。藉由使輸入開始荷重在既定值範圍內,能夠提高錯誤輸入防止性,此外,藉由使電壓損失時間在既定範圍內,能夠提高捺型筆劃穩定性、快速書寫性等的輸入穩定性。關於發揮這種輸入穩定性的效果的理由,雖然不應被解釋為受限於特定的理論,但認為原因是:能夠使電性穩定的接觸時間變得更長,能夠進一步減少電性不穩定的接觸狀態。其結果,輸入不穩定的時間變短,例如,在連續記載文字之際,能夠防止文字模糊,能夠減少快速書寫時的文字模糊。此外,例如,能夠解決在觸控面板上寫字之際,觸控面板上所顯示的文字變得模糊的不被顯示的這種課題。因此,可以實現在電阻膜式觸控面板上鮮明地畫出想要表現的文字、圖畫等。例如,也能夠表現出如用毛筆表現般的文字的捺型筆劃。 具備特徵1(輸入開始荷重)及特徵2(電壓損失時間)的透明導電性薄膜,在電阻膜式觸控面板等用途上是極有用的。 In addition, the above-mentioned transparent conductive film is characterized (characteristic 2) in that the voltage loss time obtained by the test method 2 is not less than 0.00 milliseconds and not more than 0.40 milliseconds. By keeping the voltage loss time within a predetermined range, the contact time for electrical stability becomes longer. By setting the input start load within a predetermined range, the prevention of wrong input can be improved, and by setting the voltage loss time within a predetermined range, input stability such as stroke stability and fast writing performance can be improved. Regarding the reason for exerting the effect of this input stability, although it should not be interpreted as being limited to a specific theory, it is considered that the reason is that the contact time for electrical stability can be made longer, and electrical instability can be further reduced. contact status. As a result, the time during which the input is unstable is shortened. For example, when continuously writing characters, blurring of characters can be prevented, and blurring of characters in rapid writing can be reduced. In addition, for example, when writing on the touch panel, the problem that the characters displayed on the touch panel become blurred and are not displayed can be solved. Therefore, it is possible to clearly draw desired characters, pictures, and the like on the resistive film type touch panel. For example, it is also possible to express the strokes of the strokes of a character as if expressed with a writing brush. A transparent conductive film having feature 1 (load at input start) and feature 2 (voltage loss time) is extremely useful in applications such as resistive touch panels.

電壓損失時間較佳為0.39毫秒以下,更佳為0.35毫秒以下,再更佳為0.30毫秒以下,越短越好。此外,電壓損失時間可以是0.01毫秒以上,例如,可以是0.02毫秒以上。即,電壓損失時間較佳為0.01~0.39毫秒,更佳為0.01~0.35毫秒,再更佳為0.02~0.30毫秒。The voltage loss time is preferably less than 0.39 milliseconds, more preferably less than 0.35 milliseconds, more preferably less than 0.30 milliseconds, and the shorter the better. In addition, the voltage loss time may be longer than 0.01 milliseconds, for example, may be longer than 0.02 milliseconds. That is, the voltage loss time is preferably from 0.01 to 0.39 milliseconds, more preferably from 0.01 to 0.35 milliseconds, and still more preferably from 0.02 to 0.30 milliseconds.

[試驗方法2] 將前述評價面板連接於6V的定電壓電源,從透明導電性薄膜側,使用前端為半徑0.8mm半球狀的筆,以50gf的荷重,以5次/秒的間隔按壓點狀間隙物的4點格子的中心。測定以筆開始離開透明導電性薄膜而電壓自6V減少時為起點,到電壓成為5V的時間,設為電壓損失時間。例如,圖5係顯示本發明的一態樣中的電壓和時間的關係的概念圖,橫軸13為時間軸,縱軸14表示電壓,測定電壓損失時間15的時間。 [Test method 2] Connect the above-mentioned evaluation panel to a constant voltage power supply of 6V, and use a pen with a hemispherical tip with a radius of 0.8mm from the transparent conductive film side to press 4 points of the dot-shaped spacer at intervals of 5 times/second with a load of 50gf The center of the grid. The measurement starts when the pen starts to separate from the transparent conductive film and the voltage decreases from 6V, and the time until the voltage reaches 5V is taken as the voltage loss time. For example, FIG. 5 is a conceptual diagram showing the relationship between voltage and time in one aspect of the present invention, the horizontal axis 13 is the time axis, the vertical axis 14 represents the voltage, and the voltage loss time 15 is measured.

前述透明導電性薄膜較佳為以試驗方法6所規定的ON電阻為10kΩ以下(特徵3)。ON電阻越小,越能夠提高筆滑動耐久性。ON電阻較佳為8kΩ以下,更佳為5kΩ以下,再更佳為3kΩ以下,特佳為1.0kΩ以下。又,ON電阻,例如,可以是0.1kΩ以上、2kΩ以上、或4kΩ以上。即,ON電阻較佳為0.1~10kΩ,更佳為0.1~8kΩ,再更佳為0.1~5kΩ,又再更佳為0.1~3kΩ,特佳為0.1~1kΩ。此外,可以是2~10kΩ、2~8kΩ、2~5kΩ、2~3kΩ、4~10kΩ、4~8kΩ或4~5kΩ。 [試驗方法6] 隔著直徑30μm的環氧珠粒,以導電膜彼此面對面的方式重疊在玻璃基板的單面形成了厚度為20nm的銦-錫複合氧化物導電膜(氧化錫含量:10質量%)的面板板、和透明導電性薄膜而作成評價面板。在此評價面板的透明導電性薄膜側,用前端為半徑0.8mm半球狀的聚縮醛的筆一邊施加2.5N的荷重,一邊進行滑動(來回次數5萬次,滑動距離30mm,滑動速度180mm/秒)。滑動後,用0.8N的筆荷重按住滑動部,測定電性連接時的電阻(ON電阻)。 The above-mentioned transparent conductive film preferably has an ON resistance defined by Test Method 6 of 10 kΩ or less (feature 3). The smaller the ON resistance, the more the pen sliding durability can be improved. The ON resistance is preferably at most 8 kΩ, more preferably at most 5 kΩ, even more preferably at most 3 kΩ, and most preferably at most 1.0 kΩ. Also, the ON resistance may be, for example, 0.1 kΩ or more, 2 kΩ or more, or 4 kΩ or more. That is, the ON resistance is preferably 0.1 to 10 kΩ, more preferably 0.1 to 8 kΩ, more preferably 0.1 to 5 kΩ, still more preferably 0.1 to 3 kΩ, and most preferably 0.1 to 1 kΩ. In addition, it may be 2 to 10 kΩ, 2 to 8 kΩ, 2 to 5 kΩ, 2 to 3 kΩ, 4 to 10 kΩ, 4 to 8 kΩ, or 4 to 5 kΩ. [Test method 6] A panel board in which an indium-tin composite oxide conductive film (tin oxide content: 10% by mass) with a thickness of 20 nm is formed on one side of a glass substrate so that the conductive films face each other through epoxy beads with a diameter of 30 μm. , and a transparent conductive film to make an evaluation panel. On the transparent conductive film side of the evaluation panel, a pen with a hemispherical polyacetal pen with a radius of 0.8 mm was used to slide while applying a load of 2.5 N (50,000 times of back and forth, sliding distance 30 mm, sliding speed 180 mm/ Second). After sliding, the sliding part was pressed with a pen load of 0.8N, and the resistance (ON resistance) at the time of electrical connection was measured.

前述透明導電性薄膜較佳為以試驗方法3所求出的薄膜剛軟度(BR)係0.38N.cm以上0.90N.cm以下。藉由使薄膜剛軟度(BR)成為既定值以上,能夠使輸入開始荷重成為既定值以上。此外,藉由使薄膜剛軟度(BR)成為既定值以下,能夠使ON電阻成為既定值以下。又,使薄膜剛軟度(BR)變小,在使輸入開始荷重變小上也是有用的。薄膜剛軟度(BR)更佳為0.42N.cm以上,再更佳為0.46N.cm以上。此外,更佳為0.80N.cm以下,再更佳為0.70N.cm以下,特佳為0.60N.cm以下。即,薄膜剛軟度(BR)更佳為0.42~0.80N.cm,再更佳為0.42~0.70N.cm,特佳為0.46~0.60N.cm。The aforementioned transparent conductive film is preferably 0.38N in film rigidity (BR) obtained by test method 3. 0.90N above cm. below cm. By making the film rigidity (BR) more than a predetermined value, the input start load can be made more than a predetermined value. In addition, by making the film stiffness (BR) below a predetermined value, ON resistance can be made below a predetermined value. Also, reducing the film rigidity (BR) is also useful in reducing the input start load. Film rigidity (BR) is better at 0.42N. More than cm, more preferably 0.46N. more than cm. In addition, more preferably 0.80N. cm or less, more preferably 0.70N. Below cm, the best is 0.60N. below cm. That is, the rigidity (BR) of the film is more preferably 0.42-0.80N. cm, more preferably 0.42-0.70N. cm, especially 0.46~0.60N. cm.

[試驗方法3] 使透明導電膜朝上地將20mm×250mm的透明導電性薄膜試驗片放置於水平台上,使試驗片從水平台的端點突出230mm的長度,基於下述式決定剛軟度(BR)。另外,當將一透明導電膜朝下時,剛軟度的值會改變,要注意。 剛軟度(BR(N.cm))=g×a×b×L 4/(8×δ×10 11) (式中,g係9.81(重力加速度;m/s 2),a係20(試驗片的短邊的長度;mm),b表示試驗片的比重(g/cm 3),L係230(露出在水平台之外的試驗片的長邊的長度;mm),δ表示試驗片前端的高度和水平台的高度的差(cm)) [Test method 3] Place a 20mm x 250mm transparent conductive film test piece on a horizontal platform with the transparent conductive film facing upwards, and make the test piece protrude from the end point of the horizontal platform by a length of 230mm, and determine the hardness and softness based on the following formula degree (BR). In addition, when a transparent conductive film is facing down, the value of rigidity and softness will change, so pay attention. Rigidity (BR(N.cm))=g×a×b×L 4 /(8×δ×10 11 ) (where g is 9.81 (gravitational acceleration; m/s 2 ), a is 20( The length of the short side of the test piece; mm), b represents the specific gravity of the test piece (g/cm 3 ), L is 230 (the length of the long side of the test piece exposed outside the horizontal platform; mm), δ represents the test piece The difference between the height of the front end and the height of the horizontal platform (cm))

前述透明導電性薄膜較佳為以試驗方法4所求出的導電面的最大山高Sp的平均(AVSp)滿足下述式(2-1)。輸入開始荷重係受薄膜剛軟度(BR)和平均最大山高(AVSp)這兩個參數支配,藉由使平均最大山高(AVSp)成為由薄膜剛軟度(BR)所求出的既定值以上,能夠使輸入開始荷重成為既定值以下。此外,藉由使平均最大山高(AVSp)成為既定值以下,能夠使輸入開始荷重成為既定值以上,此外,有能夠將電壓損失時間調整在更佳的範圍內的情況。 4.7×BR-3.6≦AVSp<4.7×BR-1.8...式(2-1) (式中,BR係薄膜剛軟度(N.cm),AVSp係平均最大山高(μm)) [試驗方法4] 在透明導電性薄膜的導電面上,在MD方向上以1cm間隔決定出3點,從其中心起以1cm間隔、在TD方向上對稱地決定出2點,合計5點的測定點,在各地方測定基於面粗糙度的最大山高Sp(根據ISO 25178),將其平均值設為平均最大山高(AVSp)(μm)。 In the transparent conductive film, it is preferable that the average (AVSp) of the maximum peak height Sp of the conductive surface obtained by Test Method 4 satisfies the following formula (2-1). The input start load is governed by the two parameters of film stiffness (BR) and average maximum peak height (AVSp). By making the average maximum peak height (AVSp) more than the predetermined value obtained from film stiffness (BR) , it is possible to make the input start load below a predetermined value. In addition, by making the average maximum height (AVSp) below a predetermined value, the input start load can be made above a predetermined value, and the voltage loss time can be adjusted within a more preferable range in some cases. 4.7×BR-3.6≦AVSp<4.7×BR-1.8. . . Formula (2-1) (In the formula, the rigidity and softness of the BR series film (N.cm), and the average maximum mountain height of the AVSp series (μm)) [Test method 4] On the conductive surface of the transparent conductive film, 3 points are determined at intervals of 1 cm in the MD direction, and 2 points are symmetrically determined at intervals of 1 cm from the center in the TD direction. A total of 5 measurement points are determined at each The maximum peak height Sp (according to ISO 25178) based on the surface roughness was measured locally, and the average value thereof was defined as the average maximum peak height (AVSp) (μm).

式(2-1)左側的不等號關係更佳為4.7×BR-3.5≦AVSp,再更佳為4.7×BR-3.4≦AVSp。式(2-1)右側的不等號關係更佳為AVSp<4.7×BR-1.9,再更佳為AVSp<4.7×BR-2.0。即,更佳為4.7×BR-3.5≦AVSp<4.7×BR-1.9,再更佳為4.7×BR-3.4≦AVSp<4.7×BR-2.0。The inequality sign relationship on the left side of the formula (2-1) is more preferably 4.7×BR-3.5≦AVSp, and more preferably 4.7×BR-3.4≦AVSp. The inequality sign relationship on the right side of formula (2-1) is more preferably AVSp<4.7×BR-1.9, and even more preferably AVSp<4.7×BR-2.0. That is, it is more preferably 4.7×BR-3.5≦AVSp<4.7×BR-1.9, and still more preferably 4.7×BR-3.4≦AVSp<4.7×BR-2.0.

前述透明導電性薄膜較佳為前述平均最大山高(AVSp)滿足下述式(2-2)。若平均最大山高(AVSp)為既定值以上,便能夠毫無阻礙地將透明導電性薄膜捲成卷(roll)狀。平均最大山高(AVSp)更佳為0.010(μm)以上,再更佳為0.020(μm)以上。此外,藉由使平均最大山高(AVSp)成為既定值以下,能夠更適切地防止意外的電性接觸。 0.005≦AVSp≦12.000...式(2-2) (式中,AVSp係平均最大山高(μm)) 即,AVSp更佳為0.010~12.000μm,再更佳為0.020~12.000μm。 In the transparent conductive film, it is preferable that the average maximum peak height (AVSp) satisfies the following formula (2-2). When the average maximum mountain height (AVSp) is more than a predetermined value, the transparent conductive film can be rolled into a roll without hindrance. The average maximum mountain height (AVSp) is more preferably at least 0.010 (μm), and still more preferably at least 0.020 (μm). In addition, by setting the average maximum mountain height (AVSp) below a predetermined value, accidental electrical contact can be prevented more appropriately. 0.005≦AVSp≦12.000. . . Formula (2-2) (In the formula, AVSp is the average maximum mountain height (μm)) That is, AVSp is more preferably from 0.010 to 12.000 μm, and still more preferably from 0.020 to 12.000 μm.

前述透明導電性薄膜較佳為以試驗方法5所求出的接觸面積率(CA)滿足下述式(2-3)。藉由使接觸面積率(CA)成為既定值以上,能夠使電壓損失時間成為既定值以下。認為原因是:接觸面積率(CA)越大,導電層間的電性接觸的穩定性越高,因此能夠在筆、手指等離開電阻膜式觸控面板的透明導電性薄膜時,爭取到成為電性接觸變得不穩定的接觸面積之前的時間。此外,在式(2-3)中使接觸面積率(CA)跟著剛軟度(BR)變大而變大,原因是:剛軟度(BR)越大,筆、手指等離開電阻膜式觸控面板的透明導電性薄膜的速度越快,因此必須使用接觸面積率(CA)大的透明導電性薄膜。 CA≧32.6×BR+17.2...式(2-3) (式中,BR係薄膜剛軟度(N.cm),CA係接觸面積率(%)) It is preferable that the contact area ratio (CA) obtained by the test method 5 satisfy the following formula (2-3) in the said transparent conductive film. By making the contact area ratio (CA) more than a predetermined value, the voltage loss time can be made less than a predetermined value. The reason is considered to be that the larger the contact area ratio (CA), the higher the stability of the electrical contact between the conductive layers. Therefore, when the pen, finger, etc. leave the transparent conductive film of the resistive film touch panel, it is possible to strive to become an electrical contact. The time before sexual contact becomes erratic in the area of contact. In addition, in the formula (2-3), the contact area ratio (CA) becomes larger as the rigidity (BR) increases, the reason is: the larger the rigidity (BR), the pen, finger, etc. leave the resistive film The faster the speed of the transparent conductive film of the touch panel, it is necessary to use a transparent conductive film with a large contact area ratio (CA). CA≧32.6×BR+17.2. . . Formula (2-3) (In the formula, the rigidity and softness of the BR series film (N.cm), the contact area ratio of the CA series (%))

[試驗方法5] 針對透明導電性薄膜的導電面,測定基於線粗糙度的平均高度Rc(μm)、最大山高Rp(μm)、及平均長度Rsm(μm),在滿足式(X1)及式(X2)中的至少一者和式(X3)的場所,測定基於線粗糙度的算術平均高度Ra(μm)。又,平均高度Rc(μm)、最大山高Rp(μm)、平均長度Rsm(μm)、及算術平均高度Ra(μm)係使用3維表面形狀測定裝置VertScan(菱化System公司製,R5500H-M100(測定條件:wave模式,測定波長560nm,物鏡50倍))來決定。最大山高Rp(μm)、平均長度Rsm(μm)、及算術平均高度Ra(μm)的決定係遵照JIS B 0601-2001的規定。算術平均高度Ra(μm)的測定長度設為100μm以上200μm以下。 Rp-Rc-Ra≦0.20...式(X1) (Rp-Rc)/Ra≦5.0...式(X2) Rsm≦30...式(X3) 將前述3維表面形狀測定裝置VertScan的物鏡變更為10倍,使用同測定裝置所具有的粒子解析,在離平均面(將平均線進行3維化者)達到「算術平均高度Ra(μm)-15×10 -3(μm)-平均高度Rc(μm)」的高度處,在平面方向上進行截切,求出截面積的總和。將以下的值設為接觸面積率(CA)(%):將截面積的總和除以測定視野的面積的值乘以100。 [Test method 5] For the conductive surface of the transparent conductive film, measure the average height Rc (μm), the maximum peak height Rp (μm), and the average length Rsm (μm) based on the line roughness, and satisfy the formula (X1) and the formula At least one of (X2) and the place of formula (X3) measured the arithmetic mean height Ra (micrometer) based on the line roughness. Also, the average height Rc (μm), the maximum mountain height Rp (μm), the average length Rsm (μm), and the arithmetic mean height Ra (μm) were measured using a three-dimensional surface shape measuring device VertScan (manufactured by Ryoka System Co., Ltd., R5500H-M100 (Measurement conditions: wave mode, measurement wavelength 560nm, objective lens 50 times)) to determine. The maximum mountain height Rp (μm), the average length Rsm (μm), and the arithmetic mean height Ra (μm) are determined in accordance with the provisions of JIS B 0601-2001. The measurement length of arithmetic mean height Ra (micrometer) shall be 100 micrometers or more and 200 micrometers or less. Rp-Rc-Ra≦0.20. . . Formula (X1) (Rp-Rc)/Ra≦5.0. . . Formula (X2) Rsm≦30. . . Formula (X3) Change the objective lens of VertScan, the above-mentioned 3D surface shape measurement device, to 10 times, and use the particle analysis of the same measurement device to achieve the "arithmetic mean height Ra (μm)-15×10 -3 (μm)-average height Rc (μm)", cut in the plane direction, and calculate the sum of the cross-sectional areas. The value obtained by dividing the sum of the cross-sectional areas by the area of the measurement field of view was multiplied by 100 as the contact area ratio (CA) (%).

在前述試驗方法5,考慮「算術平均高度Ra(μm)-15×10 -3(μm)」係根據以下的理由。與透明導電性玻璃接觸的透明導電性薄膜的大部分係透明導電性薄膜的平均高度的突起。因為正確地算出與此平均高度的突起的接觸面積是困難的,因此使用比前述平均突起高度稍小的高度(=比透明導電性薄膜的平均高度低15×10 -3(μm)的高度)處的透明導電性薄膜的透明導電膜側的截面積,作為替代指標(又,此高度係以從平均面下降平均高度Rc(μm)處為基準的高度)。此處,若使用JIS B 0601-2001的算術平均粗糙度Ra作為透明導電性薄膜的平均突起高度,則受位於透明導電性薄膜的透明導電膜側的數量少但高度非常高的粗大突起的影響,算術平均粗糙度Ra變得比透明導電性薄膜的實際的平均突起高度還大,因而不佳。因此,為了消除粗大突起的影響,而在滿足式(X1)及式(X2)中的至少一者和式(X3)的場所,測定算術平均粗糙度Ra(μm)。 In the aforementioned test method 5, "arithmetic mean height Ra (μm) - 15×10 -3 (μm)" is considered for the following reasons. Most of the transparent conductive film in contact with the transparent conductive glass are protrusions of the average height of the transparent conductive film. Because it is difficult to accurately calculate the contact area with the protrusions of this average height, a height slightly smaller than the above-mentioned average height of protrusions (= height 15×10 -3 (μm) lower than the average height of the transparent conductive film) is used. The cross-sectional area of the transparent conductive film side of the transparent conductive film at the place is used as a proxy index (also, this height is the height based on the average height Rc (μm) descending from the average plane). Here, if the arithmetic mean roughness Ra of JIS B 0601-2001 is used as the average protrusion height of the transparent conductive film, it is affected by the number of coarse protrusions located on the transparent conductive film side of the transparent conductive film, but the height is very high , the arithmetic average roughness Ra becomes larger than the actual average protrusion height of the transparent conductive film, which is unfavorable. Therefore, in order to eliminate the influence of coarse protrusions, the arithmetic mean roughness Ra (μm) is measured at a place satisfying at least one of formula (X1) and formula (X2) and formula (X3).

以式(2-3)所示的CA和BR的關係,更佳為CA≧32.6×BR+17.5,再更佳為CA≧32.6×BR+18.0。The relationship between CA and BR shown in formula (2-3) is more preferably CA≧32.6×BR+17.5, and still more preferably CA≧32.6×BR+18.0.

前述透明導電性薄膜係以前述試驗方法4所求出的最大山高Sp的最大值MXSp較佳為超過前述平均最大山高AVSp的1.0倍並為1.4倍以下(更佳為超過1.0倍並為1.40倍以下)。藉由使最大值MXSp成為既定值以下,透明導電膜的高突起的面內分布變得均勻,不論在哪個場所都能以同等的輸入開始荷重進行觸控面板的輸入操作,因而較佳。更佳為1.3倍以下。再更佳為1.2倍以下。It is preferable that the maximum value MXSp of the maximum peak height Sp obtained by the aforementioned test method 4 is more than 1.0 times and less than 1.4 times (more preferably more than 1.0 times and 1.40 times) the aforementioned average maximum peak height AVSp. the following). By making the maximum value MXSp below a predetermined value, the in-plane distribution of the high protrusions of the transparent conductive film becomes uniform, and the input operation of the touch panel can be performed with the same input load no matter where it is, which is preferable. More preferably, it is 1.3 times or less. More preferably, it is 1.2 times or less.

前述透明導電性薄膜係以前述試驗方法4所求出的最大山高Sp的最小值MnSp較佳為前述平均最大山高AVSp的0.6倍以上1.0倍以下(更佳為0.60倍以上1.0倍以下)。藉由使最小值MNSp成為既定值以上,透明導電膜的高突起的面內分布變得均勻,不論在哪個場所都能以同等的輸入開始荷重進行觸控面板的輸入,因而較佳。更佳為0.7倍以上,再更佳為0.8倍以上。 此外,藉由使最大值MXSp及最小值MNSp兩者都在既定範圍內,能夠使輸入開始荷重的變異成為小於平均值±5%。進一步地,也能夠防止輸入開始荷重在製品之間發生變異。 The minimum value MnSp of the maximum peak height Sp obtained by the above-mentioned test method 4 of the above-mentioned transparent conductive film is preferably 0.6 to 1.0 times (more preferably 0.60 to 1.0 times) the above-mentioned average maximum peak height AVSp. By making the minimum value MNSp more than a predetermined value, the in-plane distribution of the high protrusions of the transparent conductive film becomes uniform, and it is possible to perform input on the touch panel with the same input load at any place, which is preferable. More preferably, it is at least 0.7 times, and even more preferably at least 0.8 times. In addition, by setting both the maximum value MXSp and the minimum value MNSp within predetermined ranges, it is possible to make the variation of the input start load less than ±5% of the average value. Furthermore, it is also possible to prevent the input start load from varying among products.

前述透明導電性薄膜的總光線透射率係例如70%以上95%以下,較佳為80%以上95%以下,更佳為85%以上90%以下。The total light transmittance of the aforementioned transparent conductive film is, for example, not less than 70% and not more than 95%, preferably not less than 80% and not more than 95%, more preferably not less than 85% and not more than 90%.

2.透明導電膜 透明導電性薄膜的透明導電膜包含銦-錫複合氧化物。透明導電膜中所含的氧化錫濃度較佳為0.5質量%以上40質量%以下。若含有0.5質量%以上的氧化錫,則透明導電性薄膜的表面電阻達到實用的水準而較佳。此外,藉由使氧化錫濃度成為40質量%以下,能夠使透明導電性薄膜的透明導電膜中所含的氧化錫濃度接近觸控面板用透明導電性玻璃基板中所含的氧化錫濃度。透明導電性薄膜和玻璃基板的透明導電膜的氧化錫濃度越接近,兩透明導電膜越容易進行電性接觸,適性輸入強度、輸入穩定性進一步變佳。透明導電性薄膜的氧化錫濃度更佳為25質量%以下,再更佳為20質量%以下,特佳為18質量%以下,更佳為1質量%以上,再更佳為2質量%以上。即,氧化錫濃度更佳為1~25質量%,再更佳為1~20質量%,特佳為2~18質量%。 2. Transparent conductive film The transparent conductive film of the transparent conductive film contains an indium-tin composite oxide. The concentration of tin oxide contained in the transparent conductive film is preferably from 0.5 mass % to 40 mass %. When 0.5% by mass or more of tin oxide is contained, the surface resistance of the transparent conductive film is preferably at a practical level. Moreover, by making the tin oxide concentration 40 mass % or less, the tin oxide concentration contained in the transparent conductive film of a transparent conductive thin film can be made close to the tin oxide concentration contained in the transparent conductive glass substrate for touch panels. The closer the tin oxide concentration of the transparent conductive film and the transparent conductive film of the glass substrate is, the easier the electrical contact between the two transparent conductive films is, and the better the input strength and input stability are. The tin oxide concentration of the transparent conductive film is more preferably at most 25% by mass, more preferably at most 20% by mass, most preferably at most 18% by mass, more preferably at least 1% by mass, even more preferably at least 2% by mass. That is, the tin oxide concentration is more preferably 1 to 25% by mass, still more preferably 1 to 20% by mass, and most preferably 2 to 18% by mass.

又,一般而言,觸控面板用透明導電性玻璃基板中所含的氧化錫濃度為10質量%。透明導電性薄膜的氧化錫濃度和玻璃基板的氧化錫濃度的差係例如30質量%以下,較佳為20質量%以下,更佳為10質量%以下。Moreover, generally, the tin oxide concentration contained in the transparent conductive glass substrate for touch panels is 10 mass %. The difference between the tin oxide concentration of the transparent conductive film and the tin oxide concentration of the glass substrate is, for example, 30 mass % or less, preferably 20 mass % or less, more preferably 10 mass % or less.

透明導電膜的結晶化度,可以是0%以上100%以下中的任一者,較佳為10%以上100%以下,更佳為50%以上100%以下。結晶化度越高,筆滑動性越優異。The crystallinity of the transparent conductive film may be any of 0% to 100%, preferably 10% to 100%, more preferably 50% to 100%. The higher the degree of crystallinity, the more excellent the pen gliding property.

透明導電膜的表面電阻係例如50Ω/□以上900Ω/□以下,較佳為50Ω/□以上700Ω/□以下,更佳為70Ω/□以上500Ω/□以下。The surface resistance of the transparent conductive film is, for example, not less than 50Ω/□ and not more than 900Ω/□, preferably not less than 50Ω/□ and not more than 700Ω/□, more preferably not less than 70Ω/□ and not more than 500Ω/□.

透明導電膜的厚度較佳為10nm以上100nm以下。若透明導電膜的厚度為10nm以上,則整體透明導電膜附著於透明塑膠薄膜基材、或者是後述的硬化型樹脂層,透明導電膜的膜質穩定,表面電阻值容易穩定地位在較佳範圍內。此外,對於使以試驗方法6所規定的ON電阻變小也是有效的。更佳為透明導電膜的厚度為13nm以上,再更佳為16nm以上。此外,若透明導電膜的厚度為100nm以下,則透明導電膜的結晶粒徑和結晶化度變得適度,總光線透射率達到實用的水準,因而較佳。更佳為50nm以下,再更佳為30nm以下,特佳為25nm以下。即,透明導電膜的厚度更佳為13~50nm,再更佳為16~30nm,特佳為16~25nm。The thickness of the transparent conductive film is preferably not less than 10 nm and not more than 100 nm. If the thickness of the transparent conductive film is more than 10nm, the overall transparent conductive film is attached to the transparent plastic film substrate or the hardened resin layer described later, the film quality of the transparent conductive film is stable, and the surface resistance value is easily stabilized within the preferred range. . In addition, it is also effective for reducing the ON resistance specified in Test Method 6. More preferably, the thickness of the transparent conductive film is not less than 13 nm, and more preferably not less than 16 nm. In addition, when the thickness of the transparent conductive film is 100 nm or less, the crystal grain size and the degree of crystallization of the transparent conductive film become moderate, and the total light transmittance becomes a practical level, which is preferable. More preferably, it is 50 nm or less, still more preferably, it is 30 nm or less, and most preferably, it is 25 nm or less. That is, the thickness of the transparent conductive film is more preferably from 13 to 50 nm, still more preferably from 16 to 30 nm, particularly preferably from 16 to 25 nm.

在透明導電膜的表面上的根據JIS K5600-5-6:1999的附著性試驗中,透明導電膜的殘留面積率較佳為95%以上,更佳為99%以上,特佳為99.5%以上。藉由在附著性試驗下透明導電膜的殘留面積率在上述範圍內,透明導電性薄膜係透明塑膠薄膜基材、後述的硬化型樹脂層等的與透明導電膜相接的層和透明導電膜緊貼,即使連續地用筆對觸控面板進行輸入,仍可對透明導電膜抑制破裂、剝離、磨耗等,另外,即使要施加比通常使用所假設的力量還大的力量,仍可對透明導電膜抑制破裂、剝離等,因而較佳。In an adhesion test based on JIS K5600-5-6:1999 on the surface of the transparent conductive film, the residual area ratio of the transparent conductive film is preferably at least 95%, more preferably at least 99%, and most preferably at least 99.5%. . When the remaining area ratio of the transparent conductive film in the adhesion test is within the above range, the transparent conductive film-based transparent plastic film substrate, the layer in contact with the transparent conductive film such as the curable resin layer described later, and the transparent conductive film Adhere to the touch panel, even if the touch panel is continuously input with a pen, cracking, peeling, abrasion, etc. can still be suppressed on the transparent conductive film, and even if a force greater than that assumed in normal use is applied, the transparent A conductive film is preferable since cracking, peeling, etc. are suppressed.

前述透明導電膜的形成方法沒有特別的限定,例如,較佳為在可在表面形成有硬化型樹脂層6的透明塑膠薄膜基材7(以下,稱為被處理薄膜)上的至少一面,藉由濺鍍法形成銦-錫複合氧化物的透明導電膜的方法。為了以高生產性製造透明導電性薄膜,較佳為使用由薄膜卷供給被處理薄膜,成膜後,捲成薄膜卷的形狀的所謂的輥式濺鍍裝置。The formation method of the aforementioned transparent conductive film is not particularly limited, for example, preferably on at least one side of the transparent plastic film substrate 7 (hereinafter referred to as the film to be processed) that can be formed with a curable resin layer 6 on the surface, by A method of forming a transparent conductive film of an indium-tin composite oxide by a sputtering method. In order to produce a transparent conductive film with high productivity, it is preferable to use a so-called roll sputtering device that supplies the film to be processed from a film roll, and rolls it into a roll shape after film formation.

圖6係顯示輥式濺鍍裝置中的成膜部的一例的裝置概略圖。在此圖示例中,從未圖示的薄膜卷所送出的被處理薄膜1係一邊與中心輥2的表面部分地接觸一邊行進。在朝向被處理薄膜1與中心輥2的接觸部地具有開口部的遮罩(chimney)3內設置銦-錫的濺鍍靶4,於在中心輥2上行進的被處理薄膜1的表面堆積銦-錫複合氧化物的薄膜而予以積層。又,中心輥2可以利用未圖示的調溫機來實現溫度控制。FIG. 6 is an apparatus schematic diagram showing an example of a film forming unit in a roll sputtering apparatus. In this illustrated example, the film 1 to be processed sent out from a film roll not shown in the figure runs while partially contacting the surface of the center roll 2 . An indium-tin sputtering target 4 is placed in a mask (chimney) 3 having an opening facing the contact portion between the film to be processed 1 and the center roll 2, and deposited on the surface of the film to be processed 1 traveling on the center roll 2. Indium-tin composite oxide thin films are laminated. In addition, the temperature of the center roll 2 can be controlled by an unillustrated temperature controller.

作為靶,較佳為使用銦-錫複合氧化物的燒結靶。為了使生產效率提高,可以對薄膜的流動方向,設置複數片銦-錫複合氧化物的燒結靶。As the target, it is preferable to use a sintered target of indium-tin composite oxide. In order to improve production efficiency, a plurality of sintering targets of indium-tin composite oxide may be provided in the flow direction of the thin film.

就成膜氣體環境的形成而言,較佳為根據需要一邊使用質量流量控制器,一邊流入氧氣、非活性氣體(氬氣等)等。藉由添加氧氣,能夠更加適切地調整透明導電膜的表面電阻、總光線透射率。氧氣和非活性氣體的流量比(體積比)(氧氣/非活性氣體)係例如0.005以上,較佳為0.010以上,更佳為0.020以上,例如0.15以下,較佳為0.1以下,更佳為0.07以下,再更佳為0.05以下。即,氧氣和非活性氣體的流量比(體積比)(氧氣/非活性氣體)係例如0.005~0.15,較佳為0.010~0.1,更佳為0.020~0.07,再更佳為0.020~0.05。 此外,在成膜氣體環境中,也可以根據需要一邊使用質量流量控制器,一邊流入含氫原子的氣體(若為氫、氨、氫+氬混合氣體等包含有氫原子的氣體的話,便沒有特別的限定。但是,水除外。)。 In forming a film-forming gas environment, it is preferable to flow oxygen, an inert gas (such as argon gas) or the like while using a mass flow controller as needed. By adding oxygen, the surface resistance and total light transmittance of the transparent conductive film can be adjusted more appropriately. The flow ratio (volume ratio) of oxygen and inert gas (oxygen/inert gas) is, for example, 0.005 or more, preferably 0.010 or more, more preferably 0.020 or more, such as 0.15 or less, preferably 0.1 or less, more preferably 0.07 or less, more preferably 0.05 or less. That is, the flow ratio (volume ratio) of oxygen and inert gas (oxygen/inert gas) is, for example, 0.005-0.15, preferably 0.010-0.1, more preferably 0.020-0.07, and still more preferably 0.020-0.05. In addition, in the film-forming gas environment, it is also possible to flow a gas containing hydrogen atoms while using a mass flow controller as needed (if it is a gas containing hydrogen atoms such as hydrogen, ammonia, hydrogen+argon mixed gas, etc., there is no Special restrictions. However, water is excluded.).

成膜氣體環境中的水對非活性氣體的分壓比(水分壓/非活性氣體分壓)的中心值(最大值和最小值的中間值)係例如7.00×10 -3以下,較佳為5.00×10 -3以下,更佳為3.00×10 -3以下。成膜氣體環境中的水越少,透明導電膜的膜質越適切,表面電阻值越容易成為較佳的值,結晶化的確實性越高。然而,雖然也可以考慮以到達真空度為目標來控制水分量,但基於以下兩個理由,測定成膜時的水分量(水分壓)是較佳的。第1,若用濺鍍在塑膠薄膜上進行成膜,則薄膜被加熱,從薄膜釋出水分。到達真空度並未反映此釋出水分量的影響。第2,將從薄膜卷捲出的薄膜進行成膜時的輥中心的水分的影響並未反映在真空到達度上。若將薄膜卷保持在真空槽中,則卷的外層部分的水容易脫離,但卷的內層部分的水則很難脫離。測定到達真空度時,薄膜卷的行進是停止的,而當成膜時薄膜則是行進的,包含許多水的薄膜卷的內層部分被陸續捲出,因此成膜氣體環境中的水分量增加,增加得比測定到達真空度時的水分量還多。 The central value (intermediate value between the maximum value and the minimum value) of the partial pressure ratio (water pressure/inert gas partial pressure) of water in the film-forming gas environment to the inert gas is, for example, 7.00×10 -3 or less, preferably 5.00×10 -3 or less, more preferably 3.00×10 -3 or less. The less water in the film-forming gas environment, the more appropriate the film quality of the transparent conductive film, the easier the surface resistance value becomes a better value, and the higher the reliability of crystallization. However, it is conceivable to control the moisture content with the goal of reaching the degree of vacuum, but it is preferable to measure the moisture content (hydraulic pressure) during film formation for the following two reasons. First, if a film is formed on a plastic film by sputtering, the film is heated and moisture is released from the film. The attainment of vacuum does not reflect the effect of this amount of released moisture. Second, the influence of moisture in the center of the roll when forming a film unwound from a film roll is not reflected in the degree of vacuum attainment. If the film roll is held in a vacuum chamber, the water in the outer layer of the roll is easily detached, but the water in the inner layer of the roll is difficult to detach. When the measurement reaches the vacuum degree, the advance of the film roll is stopped, but when the film is formed, the film is advanced, and the inner part of the film roll containing a lot of water is rolled out one after another, so the moisture content in the film-forming gas environment increases. Increased by more than the amount of water measured to reach the vacuum degree.

供形成透明導電膜用的薄膜卷,在卷的端面處,最凸的地方和最凹的地方的高低差較佳為10mm以下,更佳為8mm以下,再更佳為4mm以下。若為10mm以下的話,在將薄膜卷投入濺鍍裝置時,來自薄膜端面的水、有機成分變得很難釋出,因此透明導電膜的膜質變佳。In the film roll for forming a transparent conductive film, the height difference between the most convex and the most concave at the end surface of the roll is preferably 10 mm or less, more preferably 8 mm or less, and more preferably 4 mm or less. If it is 10 mm or less, water and organic components from the end faces of the film will hardly be released when the film roll is put into a sputtering device, so the film quality of the transparent conductive film will be improved.

理想的是在形成透明導電膜之前,使被處理薄膜通過轟擊步驟。轟擊步驟係指在只流入氬氣等非活性氣體、或者是流入氧等反應性氣體和非活性氣體的混合氣體的狀態下,施加電壓進行放電,使電漿產生。具體而言,理想的是以SUS靶等,藉由RF濺鍍來轟擊薄膜。藉由轟擊步驟來使薄膜曝露於電漿下,因此水、有機成分從薄膜釋放,在形成透明導電膜時從薄膜釋出的水、有機成分減少,透明導電膜的膜質變佳。此外,藉由轟擊步驟,透明導電膜所接觸的層活化,因此透明導電膜的緊貼性提高,筆滑動耐久性進一步提高。It is desirable to pass the treated film through a bombardment step before forming the transparent conductive film. The bombardment step refers to applying a voltage to discharge in a state where only an inert gas such as argon or a mixed gas of a reactive gas such as oxygen and an inert gas flows in, so as to generate plasma. Specifically, it is desirable to bombard the thin film by RF sputtering with a SUS target or the like. The film is exposed to the plasma through the bombardment step, so water and organic components are released from the film. When the transparent conductive film is formed, the water and organic components released from the film are reduced, and the film quality of the transparent conductive film is improved. In addition, since the layer in contact with the transparent conductive film is activated by the bombardment step, the adhesiveness of the transparent conductive film is improved, and the pen sliding durability is further improved.

前述被處理薄膜1理想的是在形成透明導電膜的面的相反面貼上吸水率低的保護薄膜。藉由貼上保護薄膜,變得很難從被處理薄膜1釋出水等的氣體,透明導電膜的膜質變佳。作為前述保護薄膜的基材,例如,可舉出:聚乙烯、聚丙烯、環烯烴等烯烴類。The aforementioned film to be processed 1 is preferably coated with a protective film having a low water absorption rate on the surface opposite to the surface on which the transparent conductive film is formed. By affixing the protective film, it becomes difficult to release gas such as water from the film 1 to be processed, and the film quality of the transparent conductive film is improved. As a base material of the said protective film, olefins, such as polyethylene, a polypropylene, and cycloolefin, are mentioned, for example.

在成膜時,將被處理薄膜1冷卻至例如0℃以下,較佳為-5℃以下。藉由將被處理薄膜1冷卻,能夠抑制來自薄膜的水、有機氣體等雜質的釋出,能夠適切地調整透明導電膜的膜質。成膜中的薄膜溫度可以以調節行進薄膜接觸的中心輥的溫度的調溫機的設定溫度代用。During film formation, the film 1 to be processed is cooled to, for example, below 0°C, preferably below -5°C. By cooling the film 1 to be processed, the release of impurities such as water and organic gas from the film can be suppressed, and the film quality of the transparent conductive film can be appropriately adjusted. The temperature of the film during film formation can be substituted by the set temperature of a temperature controller that adjusts the temperature of the center roll that advances into contact with the film.

濺鍍裝置較佳為具備旋轉幫浦、渦輪分子幫浦、低溫幫浦(cryopump)等排氣裝置。藉由排氣裝置,能夠控制成膜氣體環境中的水分量。The sputtering device is preferably equipped with an exhaust device such as a rotary pump, a turbomolecular pump, or a cryopump. With the exhaust device, the moisture content in the film-forming gas environment can be controlled.

理想的是,在被處理薄膜成膜積層了銦-錫複合氧化物的透明導電膜後,在包含氧的氣體環境下,在80℃以上200℃以下下,施加0.1小時以上12小時以下的加熱處理。藉由設為80℃以上,能夠提高透明導電膜的結晶性,能夠進一步提高筆滑動耐久性。藉由設為200℃以下,能夠確保透明塑膠薄膜的平面性。Preferably, after forming a transparent conductive film laminated with indium-tin composite oxide on the film to be processed, heating is applied for 0.1 hour to 12 hours at 80°C to 200°C in an oxygen-containing gas atmosphere deal with. By setting it as 80 degreeC or more, the crystallinity of a transparent conductive film can be improved, and pen sliding durability can be improved further. By setting it as 200 degrees C or less, the flatness of a transparent plastic film can be ensured.

3.透明塑膠薄膜基材 本發明中使用的透明塑膠薄膜基材係指將有機高分子進行熔融擠出或溶液擠出而作成薄膜狀,根據需要,在長度方向及/或寬度方向上施加拉伸、冷卻、熱固定的薄膜。作為前述有機高分子,可舉出:聚乙烯、聚丙烯等聚烯烴類;聚對苯二甲酸乙二酯、聚2,6-對萘二甲酸乙二酯、聚對苯二甲酸丙二酯、聚對苯二甲酸丁二酯等聚酯類;尼龍6、尼龍4、尼龍66、尼龍12等聚醯胺類;聚醯亞胺、聚醯胺醯亞胺、聚醚碸、聚醚醚酮、聚碳酸酯、聚芳香酯、纖維素丙酸酯、聚氯乙烯、聚偏二氯乙烯、聚乙烯醇、聚醚醯亞胺、聚苯硫醚、聚苯醚、聚苯乙烯、對位性聚苯乙烯、降莰烯系聚合物等。 3. Transparent plastic film substrate The transparent plastic film substrate used in the present invention refers to melt-extruding or solution-extruding organic polymers to form a film, and stretching, cooling, and heat-fixing in the longitudinal direction and/or width direction as required. film. Examples of the aforementioned organic polymer include polyolefins such as polyethylene and polypropylene; polyethylene terephthalate, polyethylene 2,6-terephthalate, and polytrimethylene terephthalate. , polybutylene terephthalate and other polyesters; nylon 6, nylon 4, nylon 66, nylon 12 and other polyamides; polyimide, polyamide imide, polyether, polyether ether Ketone, polycarbonate, polyarylate, cellulose propionate, polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, polyetherimide, polyphenylene sulfide, polyphenylene ether, polystyrene, para Positional polystyrene, norbornene-based polymers, etc.

這些有機高分子當中,適合為聚對苯二甲酸乙二酯、聚對苯二甲酸丙二酯、聚對苯二甲酸丁二酯、聚2,6-對萘二甲酸乙二酯、對位性聚苯乙烯、降莰烯系聚合物、聚碳酸酯、聚芳香酯等。此外,這些有機高分子也可以與少量的其他有機聚合物的單體進行共聚合、與其他有機高分子摻混。Among these organic polymers, polyethylene terephthalate, polytrimethylene terephthalate, polybutylene terephthalate, polyethylene 2,6-terephthalate, para Polystyrene, norbornene-based polymers, polycarbonate, polyarylate, etc. In addition, these organic polymers can also be copolymerized with a small amount of monomers of other organic polymers and blended with other organic polymers.

在無損本發明的目的的範圍內,可以對透明塑膠薄膜基材施加電暈放電處理、輝光放電處理、火焰處理、紫外線照射處理、電子射線照射處理、臭氧處理等表面活化處理。Surface activation treatments such as corona discharge treatment, glow discharge treatment, flame treatment, ultraviolet irradiation treatment, electron beam irradiation treatment, and ozone treatment may be applied to the transparent plastic film substrate within a range not impairing the object of the present invention.

透明塑膠薄膜基材的厚度較佳為在125μm以上280μm以下的範圍內,更佳為150μm以上250μm以下。透明塑膠薄膜基材越厚,薄膜的剛軟度(BR)越容易變高,平均最大山高(AVSp)越容易滿足式(2-1)的右邊。此外,若透明塑膠薄膜基材的厚度為125μm以上,便可保持機械強度,因此特別是在用於觸控面板之際,錯誤輸入防止性變佳,另外,在用於觸控面板之際,對筆輸入的變形小,筆滑動耐久性優異,因而較佳。另一方面,若厚度為280μm以下,則在用於觸控面板之際,能夠保持適性輸入強度、優異的輸入穩定性,因而較佳。The thickness of the transparent plastic film substrate is preferably in the range of not less than 125 μm and not more than 280 μm, more preferably not less than 150 μm and not more than 250 μm. The thicker the transparent plastic film substrate is, the easier the rigidity (BR) of the film becomes, and the easier it is for the average maximum mountain height (AVSp) to satisfy the right side of formula (2-1). In addition, if the thickness of the transparent plastic film substrate is 125 μm or more, the mechanical strength can be maintained, so especially when used in a touch panel, the prevention of wrong input becomes better. In addition, when used in a touch panel, It is preferable because the deformation to pen input is small and the pen sliding durability is excellent. On the other hand, when the thickness is 280 μm or less, when used for a touch panel, an appropriate input strength and excellent input stability can be maintained, which is preferable.

4.硬化型樹脂層 硬化型樹脂層係例如,形成在透明塑膠薄膜基材與透明導電膜之間,成為透明導電膜的基底層。此外,能夠阻擋從透明塑膠薄膜基材產生的單體、寡聚物析出至透明導電膜上,因此不會阻礙觸控面板的舒適輸入性,因而較佳。另外,藉由易接著層等,透明導電膜能夠與硬化型樹脂層強而有力地緊貼、能夠將施加於透明導電膜的力分散,因此可對筆滑動耐久性試驗下的透明導電膜抑制破裂、剝離、磨耗等,因而較佳。 4. Hardened resin layer The curable resin layer is, for example, formed between the transparent plastic film substrate and the transparent conductive film, and becomes the base layer of the transparent conductive film. In addition, it is preferable that monomers and oligomers generated from the transparent plastic film substrate can be prevented from being precipitated onto the transparent conductive film, so that the comfortable input of the touch panel will not be hindered. In addition, the transparent conductive film can be strongly adhered to the curable resin layer by the easy-adhesive layer, and the force applied to the transparent conductive film can be dispersed, so the transparent conductive film can be suppressed in the pen sliding durability test. Cracks, peeling, abrasion, etc. are therefore preferred.

硬化型樹脂層的樹脂,若為藉由加熱、紫外線照射、電子射線照射等的能量施加、硬化劑而進行硬化的樹脂的話,便沒有特別的限制,例如,可舉出:矽酮系樹脂、丙烯酸系樹脂、甲基丙烯酸系樹脂、環氧系樹脂、三聚氰胺系樹脂、聚酯系樹脂、胺基甲酸酯系樹脂等。它們可以是一種,也可以組合二種以上。從生產性的觀點來看,較佳為以紫外線硬化型系樹脂作為主要成分。The resin of the curable resin layer is not particularly limited as long as it is a resin that is cured by heating, application of energy such as ultraviolet irradiation, electron beam irradiation, and a curing agent. For example, silicone-based resins, Acrylic resin, methacrylic resin, epoxy resin, melamine resin, polyester resin, urethane resin, etc. These may be used alone or in combination of two or more. From the viewpoint of productivity, it is preferable to use an ultraviolet curable resin as a main component.

作為紫外線硬化型樹脂,例如,能舉出:如多元醇的丙烯酸或甲基丙烯酸酯的多官能性的丙烯酸酯樹脂;如由二異氰酸酯、多元醇及丙烯酸或甲基丙烯酸的羥基烷基酯等所合成的多官能性胺基甲酸酯丙烯酸酯樹脂等。根據需要,能對這些多官能性樹脂添加單官能性的單體,例如乙烯基吡咯烷酮、甲基丙烯酸甲酯、苯乙烯等,使其進行共聚合。As the ultraviolet curable resin, for example, polyfunctional acrylate resin such as acrylic acid or methacrylate ester of polyol; The synthesized polyfunctional urethane acrylate resin, etc. If necessary, monofunctional monomers such as vinylpyrrolidone, methyl methacrylate, styrene, and the like can be added to these polyfunctional resins and copolymerized.

硬化型樹脂層較佳為至少在硬化前含有硬化反應起始劑。硬化反應起始劑,能夠根據硬化型樹脂的硬化種類來選擇,可舉出:熱聚合起始劑、光聚合起始劑等的自由基聚合起始劑、硬化劑等,較佳為光聚合起始劑。硬化反應起始劑的量係相對於硬化型樹脂100質量份,例如為1質量份以上5質量份以下。The curable resin layer preferably contains a curing reaction initiator at least before curing. The hardening reaction initiator can be selected according to the hardening type of the curable resin, and examples thereof include radical polymerization initiators such as thermal polymerization initiators and photopolymerization initiators, curing agents, etc., preferably photopolymerization starter. The amount of the curing reaction initiator is, for example, 1 part by mass or more and 5 parts by mass or less with respect to 100 parts by mass of the curable resin.

作為光聚合起始劑,能夠沒有特別限制地使用吸收紫外線以產生自由基的公知的化合物,例如,能舉出:各種苯偶姻類、苯基酮類、二苯甲酮類等。As the photopolymerization initiator, known compounds that absorb ultraviolet rays and generate radicals can be used without particular limitation, and examples thereof include various benzoins, phenyl ketones, and benzophenones.

硬化型樹脂層較佳為包含粒子。能夠藉由粒子來在硬化型樹脂層的表面形成凹凸。因此,若包含粒子,則基本上接觸面積率CA自100%下降,另一方面,平均最大山高AVSp的控制變得容易。此外,有剛軟度BR因增加粒子量而下降的情形,也可以藉由粒子量來調整剛軟度BR。另外,也能夠藉由粒子來更有效地展現出筆滑動耐久性、抗牛頓環性、薄膜的捲取性等的各種特性。又,在粒徑相對大的粒子(例如,後述的粒子A)的添加量少,且粒徑相對小的粒子(例如,與粒子A併用的後述的粒子B)多的情況下,與添加同一粒徑的粒子相比,有接觸面積率CA變大,平均最大山高AVSp變大的傾向。The curable resin layer preferably contains particles. Concavities and convexities can be formed on the surface of the curable resin layer by the particles. Therefore, if particles are included, the contact area ratio CA will basically decrease from 100%, and on the other hand, the control of the average maximum peak height AVSp becomes easy. In addition, there are cases where the rigidity BR decreases due to the increase of the particle amount, and the rigidity BR can also be adjusted by the particle amount. In addition, various properties such as pen sliding durability, Newton ring resistance, and film winding properties can be more effectively exhibited by particles. In addition, when the amount of particles with relatively large particle diameters (for example, particle A described later) is small and the amount of particles with relatively small particle diameters (for example, particle B described later that is used in combination with particle A) is large, the same method as adding There is a tendency that the contact area ratio CA becomes larger and the average maximum peak height AVSp becomes larger compared with particles of a particle size.

作為前述粒子,可舉出:無機粒子、有機粒子等,較佳為無機粒子。作為無機粒子,可例示:氧化矽粒子等。作為有機粒子,可例示:包含聚酯樹脂、聚烯烴樹脂、聚苯乙烯樹脂、聚醯胺樹脂等的粒子。粒子可以是一種,也可以是二種以上。Examples of the aforementioned particles include inorganic particles, organic particles, and the like, and are preferably inorganic particles. Examples of inorganic particles include silicon oxide particles and the like. Examples of organic particles include particles made of polyester resin, polyolefin resin, polystyrene resin, polyamide resin, and the like. Particles may be one kind, or two or more kinds.

前述粒子的個數平均粒徑係例如0.01μm以上10μm以下,較佳為0.03μm以上5μm以下,更佳為0.05μm以上3μm以下,特佳為0.05μm以上1.8μm以下。平均粒徑越大,能夠使透明導電層的平均最大山高AVSp越大。又,平均最大山高,除了能夠藉由使平均粒徑變大來使其變大外,還能夠藉由使後述的硬化型樹脂的塗布液中的樹脂濃度(固體成分濃度)變高、使硬化型樹脂層的厚度變薄等來使其變大。The number average particle size of the aforementioned particles is, for example, 0.01 to 10 μm, preferably 0.03 to 5 μm, more preferably 0.05 to 3 μm, and most preferably 0.05 to 1.8 μm. The larger the average particle diameter, the larger the average maximum peak height AVSp of the transparent conductive layer can be. In addition, the average maximum peak height can be increased by increasing the average particle diameter, and by increasing the resin concentration (solid content concentration) in the coating solution of the curable resin described later, the hardened The thickness of the type resin layer is reduced to make it larger.

此外,前述粒徑的標準差係例如平均粒徑的20%以下,較佳為平均粒徑的10%以下,更佳為平均粒徑的5%以下。粒徑的標準差越小,能夠使透明導電性薄膜的接觸面積率CA越大。In addition, the standard deviation of the aforementioned particle diameter is, for example, 20% or less of the average particle diameter, preferably 10% or less of the average particle diameter, more preferably 5% or less of the average particle diameter. The smaller the standard deviation of the particle diameter, the larger the contact area ratio CA of the transparent conductive film can be made.

在一態樣中,較佳為使用一種個數平均粒徑為0.01μm以上並小於1.0μm的粒子B,在另一態樣中,較佳為併用個數平均粒徑為0.4μm以上1.8μm以下的個數平均粒徑比粒子B大的粒子A、和個數平均粒徑為0.01μm以上並小於1.0μm的粒子B。粒子B的平均粒徑較佳為0.05μm以上。若平均最大山高AVSp變大(例如,變為0.6μm以上),則有接觸面積率CA變得過小的情形,但若使用粒子A、粒子B二種,便能夠適切地調整接觸面積率。又,若平均最大山高AVSp成為式(2-1)的右邊(4.7×BR-1.8)以上,則即使使用粒子A、粒子B二種,接觸面積率CA也會變得過小,因此必須使平均最大山高AVSp小於式(2-1)的右邊。In one aspect, it is preferable to use a particle B having a number average particle diameter of 0.01 μm or more and less than 1.0 μm, and in another aspect, it is preferable to use a number average particle diameter of 0.4 μm or more and 1.8 μm in combination. The following particles A having a larger number average particle diameter than the particles B, and particles B having a number average particle diameter of 0.01 μm or more and less than 1.0 μm. The average particle diameter of the particles B is preferably 0.05 μm or more. When the average maximum peak height AVSp becomes large (for example, becomes 0.6 μm or more), the contact area ratio CA may become too small, but the contact area ratio can be appropriately adjusted by using both particles A and B. Also, if the average maximum mountain height AVSp becomes more than the right side (4.7×BR-1.8) of formula (2-1), even if two kinds of particles A and B are used, the contact area ratio CA will become too small, so the average The maximum mountain height AVSp is smaller than the right side of formula (2-1).

在包含一種粒子B的情況下,硬化型樹脂層中的粒子B的量係相對於硬化樹脂層的固體成分100質量%,例如為0.1質量%以上25質量%以下,較佳為0.5質量%以上18質量%以下。 此外,在包含二種粒子A和粒子B情況下,硬化型樹脂層中的粒子A的量係相對於硬化樹脂層的固體成分100質量%,例如為0.1質量%以上5質量%以下。硬化型樹脂層中的粒子B的量係相對於硬化樹脂層的固體成分100質量%,較佳為比粒子A的量多,例如超過5質量%並為30質量%以下,較佳為6質量%以上15質量%以下。 When one type of particle B is included, the amount of particle B in the curable resin layer is 0.1 mass % to 25 mass %, preferably 0.5 mass % or more, relative to 100 mass % of the solid content of the cured resin layer. 18% by mass or less. In addition, when two types of particles A and B are included, the amount of particles A in the curable resin layer is, for example, 0.1% by mass to 5% by mass relative to 100% by mass of the solid content of the cured resin layer. The amount of particle B in the curable resin layer is relative to 100% by mass of the solid content of the cured resin layer, preferably more than the amount of particle A, for example, more than 5% by mass and 30% by mass or less, preferably 6% by mass % or more and 15% by mass or less.

藉由依以上方式調整粒子的大小、量,能夠使透明導電層的平均最大山高AVSp滿足式(2-1),同時接觸面積率CV不會變得過小。此外,薄膜的剛軟度BR也能夠調整。因此,能夠將輸入開始荷重控制在適切的範圍內,能夠使電壓損失時間變短,能夠達成適性輸入強度和輸入穩定性。By adjusting the size and amount of the particles in the above manner, the average maximum peak height AVSp of the transparent conductive layer can satisfy the formula (2-1), and at the same time, the contact area ratio CV will not become too small. In addition, the rigidity BR of the film can also be adjusted. Therefore, the input start load can be controlled within an appropriate range, the voltage loss time can be shortened, and the adaptive input strength and input stability can be achieved.

硬化型樹脂層的厚度較佳為在0.1μm以上15μm以下的範圍內。更佳為在0.5μm以上10μm以下的範圍內,特佳為在1μm以上8μm以下的範圍內。在硬化型樹脂層的厚度為0.1μm以上的情況下,可形成足夠的突起而較佳。另一方面,若為15μm以下的話,則生產性更佳。此外,有若硬化型樹脂層厚,便會使透明導電性薄膜的剛軟度BR增加的傾向。The thickness of the curable resin layer is preferably in the range of 0.1 μm to 15 μm. More preferably, it is in the range of 0.5 μm to 10 μm, particularly preferably in the range of 1 μm to 8 μm. When the thickness of the curable resin layer is 0.1 μm or more, sufficient protrusions can be formed, which is preferable. On the other hand, productivity is more favorable when it is 15 micrometers or less. In addition, when the curable resin layer is thick, the rigidity BR of the transparent conductive film tends to increase.

硬化型樹脂層可以含有與硬化型樹脂不相溶的樹脂(以下,有簡稱為不相溶樹脂的情況)。藉由不相溶樹脂分散在硬化型樹脂層中,能夠在硬化型樹脂層的表面形成凹凸,使廣大區域的表面粗糙度提高。作為不相溶樹脂,可例示:聚酯樹脂、聚烯烴樹脂、聚苯乙烯樹脂、聚醯胺樹脂等。The curable resin layer may contain a resin that is incompatible with the curable resin (hereinafter, may be simply referred to as an incompatible resin). By dispersing the immiscible resin in the curable resin layer, unevenness can be formed on the surface of the curable resin layer, and the surface roughness of a wide area can be improved. Examples of incompatible resins include polyester resins, polyolefin resins, polystyrene resins, and polyamide resins.

硬化型樹脂層係藉由使硬化前的硬化型樹脂成為液狀,塗布於積層對象(透明塑膠薄膜基材、易接著劑層等)並加以硬化來形成。塗布物,除了前述硬化型樹脂外,還可以包含硬化反應起始劑(熱聚合起始劑、光聚合起始劑等的自由基聚合起始劑、硬化劑等。較佳為光聚合起始劑)、粒子、與硬化型樹脂不相溶的樹脂、溶劑等。此外,此塗布液中,也可以根據需要添加其他公知的添加劑,例如,矽酮系勻塗劑等。使用的溶劑沒有特別的限制,例如,能夠將如乙醇、異丙醇等醇系溶劑;如乙酸乙酯、乙酸丁酯等酯系溶劑;如二丁醚、乙二醇一乙醚等醚系溶劑;如甲基異丁基酮、環己酮等酮系溶劑;如甲苯、二甲苯、溶劑石油腦等芳香族烴系溶劑等單獨使用或者是混合使用。The curable resin layer is formed by making the curable resin before curing into a liquid state, applying it to the lamination object (transparent plastic film substrate, easy-adhesive layer, etc.) and curing it. The coating may contain, in addition to the aforementioned curable resin, a hardening reaction initiator (a thermal polymerization initiator, a photopolymerization initiator, a radical polymerization initiator, a hardener, etc., preferably a photopolymerization initiator agent), particles, resins incompatible with hardening resins, solvents, etc. In addition, other well-known additives, such as a silicone-based leveling agent, etc., may be added to this coating liquid as needed. The solvent used is not particularly limited, for example, alcohol-based solvents such as ethanol and isopropanol; ester-based solvents such as ethyl acetate and butyl acetate; ether-based solvents such as dibutyl ether and ethylene glycol monoethyl ether ; Such as methyl isobutyl ketone, cyclohexanone and other ketone solvents; such as toluene, xylene, solvent naphtha and other aromatic hydrocarbon solvents, used alone or in combination.

塗布液中的硬化型樹脂的濃度(稱為固體成分濃度),能夠考慮與塗布法相應的黏度等而適切地選擇。固體成分濃度係例如35質量%以上58質量%以下,較佳為42質量%以上55質量%以下。有若固體成分濃度高、硬化型樹脂層的厚度薄(例如,4.0μm以下),則硬化型樹脂層的平均最大山高在式(2-1)的關係下變高、接觸面積率CA變小的傾向。又,若在固體成分濃度超過58質量%的情況下(例如,在超過58質量%、65質量%以下左右時),硬化型樹脂層的厚度為4.0μm以下,在併用粒子A和粒子B的情況下將粒子A的粒徑設為0.80μm以下,使粒子A的量成為相對於硬化樹脂層的固體成分100質量%為4質量%以下的話,便容易實現使式(2-1)觀點下的平均最大山高和接觸面積率CA在適切的範圍內。The concentration of the curable resin in the coating solution (referred to as solid content concentration) can be appropriately selected in consideration of the viscosity and the like according to the coating method. The solid content concentration is, for example, not less than 35% by mass and not more than 58% by mass, preferably not less than 42% by mass and not more than 55% by mass. When the solid content concentration is high and the thickness of the curable resin layer is thin (for example, 4.0 μm or less), the average maximum peak height of the curable resin layer becomes higher according to the relationship of formula (2-1), and the contact area ratio CA becomes smaller Propensity. Also, when the solid content concentration exceeds 58% by mass (for example, when it exceeds 58% by mass and is about 65% by mass or less), the thickness of the curable resin layer is 4.0 μm or less. In this case, if the particle size of the particles A is set to be 0.80 μm or less, and the amount of the particles A is 4% by mass or less with respect to the solid content of the cured resin layer 100% by mass, it is easy to realize the formula (2-1). The average maximum mountain height and contact area ratio CA are within the appropriate range.

將前述塗布液塗布於積層對象的方法沒有特別的限制,例如,能夠使用棒塗布法、凹版塗布法、逆塗布法等公知的方法。所塗布的塗布液係溶劑在後續的乾燥步驟中被蒸發除去。在塗布液中溶解有不相溶樹脂(聚酯樹脂等)的情況下,在此乾燥步驟,不相溶樹脂成為粒子而在紫外線硬化型樹脂中析出。將塗膜乾燥後,能夠藉由進行與硬化種類相應的適切處理(例如,紫外線照射)來形成硬化型樹脂層。There are no particular limitations on the method of applying the coating liquid to the layered object, and for example, known methods such as bar coating, gravure coating, and reverse coating can be used. The applied coating liquid solvent is evaporated and removed in the subsequent drying step. When an incompatible resin (polyester resin, etc.) is dissolved in the coating liquid, in this drying step, the incompatible resin becomes particles and precipitates in the ultraviolet curable resin. After the coating film is dried, a curable resin layer can be formed by performing an appropriate treatment (for example, ultraviolet irradiation) according to the type of curing.

對於積層對象的塗布面,可以在塗布塗布液前,根據需要進行硬化型樹脂層的附著力提高的處理。作為附著力提高的處理,可舉出:供增加羰基、羧基、羥基用的照射輝光或電暈放電的放電處理法;供使胺基、羥基、羰基等極性基增加用的以酸或鹼進行處理的化學藥品處理法等。The coating surface to be laminated may be treated, if necessary, to improve the adhesion of the curable resin layer before coating the coating liquid. As the treatment for improving the adhesion, it can be mentioned: the discharge treatment method of irradiating glow or corona discharge for increasing carbonyl, carboxyl, and hydroxyl groups; for increasing polar groups such as amine groups, hydroxyl groups, and carbonyl groups, it is carried out with acid or alkali. Chemical treatment method, etc.

如上所述,就使平均最大山高AVSp在既定範圍內、使接觸面積率CA在既定範圍內而言,必須調整各種因素,其細節係如上所述,但若省略細節而簡要說明,則能夠藉由利用以下的關係來調整。即,基本而言,有若粒徑大、若固體成分濃度高、或若樹脂層的厚度薄,則平均最大山高AVSp的絕對值變大的傾向。滿足式(2-1)的平均最大山高AVSp係隨剛軟度BP而變,剛軟度BP越小,平均最大山高AVSp便越小。此外,基本而言,若平均最大山高AVSp變高,則接觸面積率CA變小。但是,若作為添加於樹脂層的平均粒徑係使用二種大小,並使大粒子的粒子添加量變少,則平均最大山高AVSp變高,接觸面積率CV變高。在使用二種大小的粒子的情況下,大粒子的添加量越少,小粒子的平均粒徑給接觸面積率CA帶來的影響越大。As mentioned above, in order to make the average maximum mountain height AVSp and the contact area ratio CA within the predetermined range, it is necessary to adjust various factors. It is adjusted by using the following relationship. That is, basically, if the particle size is large, if the solid content concentration is high, or if the thickness of the resin layer is thin, the absolute value of the average maximum peak height AVSp tends to increase. The average maximum mountain height AVSp that satisfies the formula (2-1) changes with the rigidity and softness BP, the smaller the rigidity and softness BP, the smaller the average maximum mountain height AVSp. In addition, basically, as the average maximum mountain height AVSp becomes higher, the contact area ratio CA becomes smaller. However, if two types of average particle diameters are used to add to the resin layer, and the particle addition amount of large particles is reduced, the average maximum peak height AVSp increases and the contact area ratio CV increases. In the case of using particles of two sizes, the smaller the amount of large particles added, the greater the influence of the average particle diameter of small particles on the contact area ratio CA.

5.功能層 功能層係除了形成在透明塑膠薄膜基材的相反面外,較佳為與前述硬化型樹脂層一樣,前述硬化型樹脂層的說明係除了粒子的大小及量以外,全部適用於功能層。若在透明塑膠薄膜基材積層功能層,便能夠防止單體、寡聚物從透明塑膠薄膜基材析出,能夠抑制透明導電性薄膜可見度降低。此外,能夠調整透明導電性薄膜的剛軟度BR。此外,藉由在透明塑膠薄膜基材具有功能層,變得很難出現因用筆等進行輸入所造成的刮傷,因而較佳。 5. Functional layer Except that the functional layer is formed on the opposite side of the transparent plastic film substrate, it is preferably the same as the aforementioned hardening resin layer. The description of the aforementioned hardening resin layer is applicable to the functional layer except for the size and amount of particles. If the functional layer is laminated on the transparent plastic film substrate, the precipitation of monomers and oligomers from the transparent plastic film substrate can be prevented, and the decrease in visibility of the transparent conductive film can be suppressed. In addition, the rigidity BR of the transparent conductive film can be adjusted. Moreover, since it becomes difficult to generate|occur|produce scratches by inputting with a pen etc. by having a functional layer in a transparent plastic film base material, it is preferable.

於在功能層中摻合粒子(粒子C)的情況下,粒子C的個數平均粒徑係例如0.01μm以上10μm以下,較佳為0.1μm以上7μm以下,更佳為1μm以上5μm以下。 粒子C係每100質量份的功能層中的硬化型樹脂,較佳為0.1質量份以上60質量份以下,更佳為0.3質量份以上40質量份以下,再更佳為0.5質量份以上30質量份以下。能夠藉由粒子C的量來調整透明導電性薄膜的剛軟度BR。此外,能夠藉由粒子C來在功能層形成表面突起,也能夠保持薄膜捲取性。 When mixing particles (particles C) into the functional layer, the number average particle size of the particles C is, for example, 0.01 μm to 10 μm, preferably 0.1 μm to 7 μm, more preferably 1 μm to 5 μm. The particle C is preferably 0.1 to 60 parts by mass, more preferably 0.3 to 40 parts by mass, and still more preferably 0.5 to 30 parts by mass per 100 parts by mass of the hardening resin in the functional layer. servings or less. The rigidity BR of the transparent conductive film can be adjusted by the amount of the particles C. In addition, surface protrusions can be formed on the functional layer by the particles C, and film winding properties can also be maintained.

在功能層的表面上的根據JIS K5600-5-6:1999的附著性試驗中,功能層的殘留面積率較佳為95%以上,更佳為99%以上,特佳為99.5%以上。藉由在附著性試驗下功能層的殘留面積率在上述範圍內,透明導電性薄膜係透明塑膠薄膜基材和功能層緊貼,即使連續地用筆對觸控面板進行輸入,仍可對功能層抑制破裂、剝離、磨耗等的外觀不良,另外,即使要施加比通常使用所假設的力量還大的力量,仍可對功能層抑制破裂、剝離等,因而較佳。In an adhesion test based on JIS K5600-5-6:1999 on the surface of the functional layer, the residual area ratio of the functional layer is preferably at least 95%, more preferably at least 99%, and most preferably at least 99.5%. Since the residual area ratio of the functional layer in the adhesion test is within the above range, the transparent conductive film is a transparent plastic film substrate and the functional layer is in close contact. Even if the touch panel is continuously input with a pen, the function can still be controlled. The layer suppresses appearance defects such as cracking, peeling, and abrasion, and it is preferable to suppress cracking, peeling, etc. of the functional layer even if a force greater than that assumed in normal use is applied.

在透明導電性薄膜具有功能層和硬化樹脂層的情況下,功能層和硬化樹脂層的厚度較佳為相同的,此外,較佳為功能層和硬化樹脂層的厚度差的絕對值具有以下的關係。 0.1μm≦|硬化樹脂層的厚度-功能層的厚度|≦3μm 有能夠藉由對功能層和硬化樹脂層設定厚度差,來調整透明導電性薄膜的剛軟度BR的情況。此外,能夠更有效地展現出筆滑動耐久性等的各種特性。另外,能夠進一步改善適性輸入強度。 此外,硬化樹脂層的每單位體積的粒子質量、和功能層的每單位體積的粒子質量較佳為不同的。 In the case where the transparent conductive film has a functional layer and a cured resin layer, the thicknesses of the functional layer and the cured resin layer are preferably the same. In addition, it is preferable that the absolute value of the thickness difference between the functional layer and the cured resin layer has the following relation. 0.1μm≦|Thickness of cured resin layer - thickness of functional layer|≦3μm In some cases, the rigidity BR of the transparent conductive film can be adjusted by setting a thickness difference between the functional layer and the cured resin layer. In addition, various characteristics such as pen sliding durability can be more effectively exhibited. In addition, the adaptive input strength can be further improved. In addition, the particle mass per unit volume of the cured resin layer and the particle mass per unit volume of the functional layer are preferably different.

6.易接著劑層 易接著劑層較佳為由含有胺基甲酸酯樹脂、交聯劑、及聚酯樹脂的組成物形成。作為交聯劑,較佳為嵌段異氰酸酯,更佳為3官能以上的嵌段異氰酸酯,特佳為4官能以上的嵌段異氰酸酯。易接著層的厚度較佳為0.001μm以上2.00μm以下。 6. Easy adhesive layer The easy-adhesive layer is preferably formed of a composition containing a urethane resin, a crosslinking agent, and a polyester resin. The crosslinking agent is preferably a blocked isocyanate, more preferably a trifunctional or higher blocked isocyanate, particularly preferably a tetrafunctional or higher blocked isocyanate. The thickness of the easily-adhesive layer is preferably from 0.001 μm to 2.00 μm.

本申請案係主張基於2021年6月22日所申請的日本專利申請第2021-103501號的優先權權益者。本申請案引用2021年6月22日所申請的日本專利申請第2021-103501號的說明書全部內容作為參考。 [實施例] This application is an applicant claiming the right of priority based on Japanese Patent Application No. 2021-103501 filed on June 22, 2021. This application incorporates the entire contents of the specification of Japanese Patent Application No. 2021-103501 filed on June 22, 2021 as a reference. [Example]

以下,藉由實施例進一步詳細地說明本發明,但本發明完全不限於這些實施例。又,實施例中的各種測定評價係藉由下述方法進行。Hereinafter, the present invention will be described in further detail by examples, but the present invention is not limited to these examples at all. In addition, various measurement evaluations in Examples were performed by the following methods.

1.測定評價 (1)氧化矽粒子的平均粒徑 將透明導電性薄膜的截面的粒子以掃描型電子顯微鏡(Keyence公司製,VE-8800)進行觀察,隨意地挑出50個粒子,觀察各自的粒徑。接著,對所觀察的50個粒子,將粒徑按0.020μm的區間分組,求出各區間所含的粒子的總數,作成如下的直方圖:縱軸係粒子個數,橫軸係0.020μm區間刻度的粒徑。在粒徑為離從直方圖取得常態分配狀的山峰的極大值的粒徑區間的中心值的絕對值±30%以內的粒子中,將所觀測的粒徑的個數平均設為平均粒徑。例如,於在直方圖中有二個常態分配狀的山峰的情況下,表示添加有二種粒子,藉由與前述相同的方法,算出二種平均粒徑。 1. Measurement evaluation (1) Average particle size of silicon oxide particles Particles in the cross section of the transparent conductive film were observed with a scanning electron microscope (VE-8800, manufactured by Keyence Corporation), 50 particles were randomly picked out, and the respective particle diameters were observed. Next, for the observed 50 particles, the particle diameters are grouped into intervals of 0.020 μm, the total number of particles contained in each interval is calculated, and the following histogram is made: the vertical axis is the number of particles, and the horizontal axis is the interval of 0.020 μm Scale particle size. Among the particles whose particle size is within ±30% of the absolute value of the center value of the particle size interval of the maximum value of the peak of the normal distribution obtained from the histogram, the average number of observed particle sizes is defined as the average particle size . For example, when there are two peaks in the normal distribution state in the histogram, it means that two kinds of particles are added, and the two kinds of average particle diameters are calculated by the same method as above.

(2)硬化型樹脂層的厚度、功能層的厚度 硬化型樹脂層的厚度係用以下方法進行:將透明導電性薄膜的截面以掃描型電子顯微鏡(Keyence公司製,VE-8800)進行觀察,觀察任意5點,以其平均值作為厚度。對於功能層的厚度,也採用同樣的方法。 (2) Thickness of curable resin layer, thickness of functional layer The thickness of the curable resin layer was measured by observing the cross-section of the transparent conductive film with a scanning electron microscope (manufactured by Keyence, VE-8800), observing arbitrary 5 points, and taking the average value as the thickness. The same method is used for the thickness of the functional layer.

(3)透明導電膜中所含的氧化錫的含量 切取試料(約15cm 2),放入石英製三角燒瓶,加入20ml的6mol/l鹽酸,加以封膜(film seal)以使酸不會揮發掉。一邊在室溫下不時加以搖動一邊放置9天,使透明導電膜溶解。取出剩下的薄膜,將溶解了透明導電膜的鹽酸作為測定液。溶解液中的In、Sn係使用ICP發光分析裝置(製造商名稱:Rigaku,裝置型式:CIROS-120 EOP),以檢量曲線法求出。各元素的測定波長係選擇沒有干涉、感度高的波長。此外,標準溶液係稀釋市售的In、Sn的標準溶液使用。 (3) Content of tin oxide contained in the transparent conductive film Cut out a sample (approximately 15 cm 2 ), put it into a quartz Erlenmeyer flask, add 20 ml of 6 mol/l hydrochloric acid, and seal it with a film (film seal) so that the acid does not volatilize Lose. It was left to stand for 9 days while shaking occasionally at room temperature to dissolve the transparent conductive film. The remaining film was taken out, and hydrochloric acid in which the transparent conductive film was dissolved was used as a measurement solution. In and Sn in the solution were determined by the calibration curve method using an ICP emission analyzer (manufacturer name: Rigaku, device type: CIROS-120 EOP). The measurement wavelength of each element is a wavelength with no interference and high sensitivity. In addition, standard solutions were used by diluting commercially available In and Sn standard solutions.

(4)透明導電膜厚度 將積層了透明導電膜的薄膜試料片切出1mm×10mm的大小,埋藏在電子顯微鏡用環氧樹脂中。將其固定在超微切片機的試料支架,製作與所埋藏的試料片的短邊平行的截面薄切片。接著,在此切片的薄膜的沒有明顯損傷的部位中,使用透射型電子顯微鏡(JEOL公司製,JEM-2010),由依加速電壓200kV、在明場下、觀察倍率1萬倍進行拍照所得到的照片求出膜厚。 (4) Thickness of transparent conductive film The thin film sample piece on which the transparent conductive film was laminated was cut out to a size of 1 mm×10 mm, and embedded in epoxy resin for electron microscopy. This was fixed to the sample holder of the ultramicrotome, and a thin section of cross-section parallel to the short side of the buried sample piece was prepared. Next, a portion of the sliced thin film without obvious damage was photographed using a transmission electron microscope (manufactured by JEOL, JEM-2010) at an accelerating voltage of 200 kV under bright field at an observation magnification of 10,000 times. The film thickness was obtained from the photograph.

(5)透明導電膜的結晶化度 將積層了透明導電膜的薄膜試料片切出1mm×10mm大小,將導電性薄膜面朝外而貼附在適當的樹脂塊的上面。將其修剪後,利用一般的超微切片機的技法製作與薄膜表面幾乎平行的超薄切片。用透射型電子顯微鏡(JEOL公司製,JEM-2010)觀察此切片,選擇沒有明顯損傷的導電性薄膜表面部分,用加速電壓200kV、直接倍率40000倍進行拍照。作為透明導電膜的結晶性評價,觀察在透射型電子顯微鏡下所觀察到的結晶粒的比例,即結晶化度。 (5) Crystallinity of transparent conductive film The film sample piece on which the transparent conductive film was laminated was cut out to a size of 1 mm×10 mm, and the conductive film was stuck on the top surface of a suitable resin block with the conductive film facing outward. After trimming, an ultra-thin section almost parallel to the surface of the film is made using a general ultramicrotome technique. This section was observed with a transmission electron microscope (JEOL, JEM-2010), and a surface portion of the conductive film without obvious damage was selected, and photographed at an accelerating voltage of 200 kV and a direct magnification of 40,000 times. As the crystallinity evaluation of the transparent conductive film, the ratio of crystal grains observed under a transmission electron microscope, that is, the degree of crystallinity was observed.

(6)總光線透射率(%) 根據JIS-K7361-1:1997,使用日本電色工業(股)製的NDH-2000測定總光線透射率。 (7)表面電阻 根據JIS-K7194:1994,依4端子法進行測定。測定機使用三菱化學Analytech(股)製的Lotesta AX MCP-T370。 (6) Total light transmittance (%) The total light transmittance was measured using NDH-2000 manufactured by Nippon Denshoku Industries Co., Ltd. in accordance with JIS-K7361-1:1997. (7) Surface resistance Based on JIS-K7194:1994, it measured by the 4-terminal method. As a measuring machine, Lotesta AX MCP-T370 manufactured by Mitsubishi Chemical Analytech Co., Ltd. was used.

(8)附著性試驗 根據JIS K5600-5-6:1999實施。下述表中的結果係以殘留面積率(%)來表示附著性。殘留面積率的最高值為100%。表中的附著性試驗的殘留面積率越接近100%,剝離面積越少。 (8) Adhesion test Implemented in accordance with JIS K5600-5-6:1999. The results in the following tables represent the adhesiveness by the remaining area ratio (%). The maximum value of the remaining area ratio is 100%. The closer the residual area ratio in the adhesion test in the table is to 100%, the smaller the peeled area is.

(9)剛軟度(BR)(試驗方法3) 從透明導電性薄膜採取20mm×250mm的試驗片,使透明導電膜朝上地將試驗片配置於表面平滑的水平台上。試驗片係僅20mm×20mm的部分放置於水平台上,使20mm×230mm的部分從水平台的端點水平地突出。又,在試驗片的20mm×20mm的部分上放置砝碼,以在試驗片與水平台之間沒有形成間隙的方式選擇砝碼的重量、尺寸。接著,利用刻度尺讀取水平台的高度和薄膜的前端的高度的差(=δ)。將數值代入下述式算出剛軟度。 剛軟度BR(N.cm)=g×a×b×L 4/(8×δ×10 11) (式中,g係9.81(重力加速度;m/s 2),a係20(試驗片的短邊的長度;mm),b表示試驗片的比重(g/cm 3),L係230(露出在水平台之外的試驗片的長邊的長度;mm),δ表示試驗片前端的高度和水平台的高度的差(cm)) 上述的比重b係用以下的方法測定。 將透明導電性薄膜切出5.0cm見方的正方形,使用測微計,以有效數字3位,改變場所地測定10點的總厚度,求出厚度的平均值(t:μm)。使用自動上皿天秤,以有效數字4位,測定切成5.0cm見方的正方形的樣品的重量(w:g),由下式求出比重。又,比重係簡化為有效數字2位。 比重b(g/cm 3)=w/(5.0×5.0×t×10 -4) (9) Rigidity (BR) (Test method 3) A test piece of 20 mm×250 mm was taken from the transparent conductive film, and the test piece was arranged on a horizontal table with a smooth surface so that the transparent conductive film faced upward. Only the 20mm x 20mm part of the test piece is placed on the horizontal platform so that the 20mm x 230mm part protrudes horizontally from the end point of the horizontal platform. Also, a weight was placed on a portion of 20 mm×20 mm of the test piece, and the weight and size of the weight were selected so that no gap was formed between the test piece and the horizontal table. Next, the difference (=δ) between the height of the horizontal platform and the height of the front end of the film was read using a scale. The stiffness was calculated by substituting the numerical value into the following formula. Rigidity BR(N.cm)=g×a×b×L 4 /(8×δ×10 11 ) (where g is 9.81 (gravitational acceleration; m/s 2 ), a is 20 (test piece The length of the short side of the test piece; mm), b represents the specific gravity of the test piece (g/cm 3 ), L is 230 (the length of the long side of the test piece exposed outside the horizontal platform; mm), δ represents the front end of the test piece Difference (cm) between the height and the height of the horizontal platform) The above-mentioned specific gravity b was measured by the following method. Cut the transparent conductive film into a square of 5.0 cm square, use a micrometer, measure the total thickness of 10 points with 3 significant figures, and change the place, and calculate the average value of the thickness (t: μm). The weight (w: g) of the sample cut into a square of 5.0 cm square was measured with 4 significant figures using an automatic loading scale, and the specific gravity was calculated|required from the following formula. Also, the specific gravity is simplified to 2 significant figures. Specific gravity b(g/cm 3 )=w/(5.0×5.0×t×10 -4 )

(10)最大山高(Sp)、平均最大山高AVSp(μm)(試驗方法4) 從透明導電性薄膜的導電面測定5點的最大山高(Sp)(ISO;面粗糙度),將其算術平均值設為平均最大山高(AVSp)。5點的選法係首先選擇任意一點A。接著,在相對於A、薄膜的長度(MD)方向的上下游1cm處各選擇1點,合計2點。接著,在相對於A、薄膜的寬度(TD)方向的左右1cm處各選擇1點,合計2點。最大山高(Sp)(ISO;面粗糙度)係ISO 25178中所規定者,使用3維表面形狀測定裝置VertScan(菱化System公司製,R5500H-M100(測定條件:wave模式,測定波長560nm,物鏡10倍))來求出。此外,小於1nm的值係採四捨五入簡化。 (10) Maximum mountain height (Sp), average maximum mountain height AVSp (μm) (test method 4) The maximum peak height (Sp) (ISO; surface roughness) at 5 points was measured from the conductive surface of the transparent conductive film, and the arithmetic mean thereof was defined as the average maximum peak height (AVSp). The 5-point selection method first selects any point A. Next, 1 point was selected at 1 cm upstream and downstream with respect to A and the length (MD) direction of the film, and 2 points were totaled. Next, 1 point was selected at 1 cm on the left and right with respect to A and the width (TD) direction of the film, and 2 points were totaled. The maximum mountain height (Sp) (ISO; surface roughness) is specified in ISO 25178, using a 3-dimensional surface shape measurement device VertScan (manufactured by Ryoka System Co., Ltd., R5500H-M100 (measurement conditions: wave mode, measurement wavelength 560nm, objective lens 10 times)) to find out. In addition, values smaller than 1 nm are rounded for simplification.

(11)最大山高上側位移率(MXSp/AVSp)、最大山高下側位移率(MNSp/AVSp) 將以前述試驗方法4所求出的最大山高Sp的最大值MXSp和平均值AVSp的比設為最大山高上側位移率(MXSp/AVSp)。 此外,將以前述試驗方法4所求出的最大山高Sp的最小值MNSp和平均值AVSp的比(MNSp/AVSp)設為最大山高下側位移率。 (11) The displacement rate of the upper side of the maximum mountain height (MXSp/AVSp), the displacement rate of the lower side of the maximum mountain height (MNSp/AVSp) The ratio of the maximum value MXSp of the maximum mountain height Sp obtained by the aforementioned test method 4 to the average value AVSp is defined as the maximum mountain height upper side displacement rate (MXSp/AVSp). In addition, the ratio (MNSp/AVSp) of the minimum value MNSp of the maximum mountain height Sp obtained by the above-mentioned test method 4 to the average value AVSp is defined as the maximum mountain height lower side displacement rate.

(12)接觸面積率CA(%)、平均高度Rc(μm)、最大山高Rp(μm)、平均長度Rsm(μm)、算術平均高度Ra(μm)(試驗方法5) 針對透明導電性薄膜的導電面,測定基於線粗糙度的平均高度Rc(μm)、最大山高Rp(μm)、及平均長度Rsm(μm),在滿足式(X1)及式(X2)中的至少一者和式(X3)的場所,測定基於線粗糙度的算術平均高度Ra(μm)。又,平均高度Rc(μm)、最大山高Rp(μm)、平均長度Rsm(μm)、及算術平均高度Ra(μm)係使用3維表面形狀測定裝置VertScan(菱化System公司製,R5500H-M100(測定條件:wave模式,測定波長560nm,物鏡50倍))來決定。又,最大山高Rp(μm)、平均長度Rsm(μm)、及算術平均高度Ra(μm)的決定係遵照JIS B 0601-2001的規定。算術平均高度Ra(μm)的測定長度設為100μm以上200μm以下。 Rp-Rc-Ra≦0.20...式(X1) (Rp-Rc)/Ra≦5.0...式(X2) 將前述3維表面形狀測定裝置VertScan的物鏡變更為10倍,使用同測定裝置所具有的粒子解析,在離平均面達到「算術平均高度Ra(μm)-15×10 -3(μm)-平均高度Rc(μm)」的高度處,在平面方向上進行截切,求出截面積的總和。將以下的值設為接觸面積率(CA)(%):將截面積的總和除以測定視野的面積的值乘以100。 (12) Contact area ratio CA (%), average height Rc (μm), maximum peak height Rp (μm), average length Rsm (μm), arithmetic mean height Ra (μm) (test method 5) for transparent conductive films On the conductive surface, measure the average height Rc (μm) based on the line roughness, the maximum peak height Rp (μm), and the average length Rsm (μm), and satisfy at least one of the formula (X1) and the formula (X2) and the formula ( In the case of X3), the arithmetic mean height Ra (μm) based on the line roughness was measured. Also, the average height Rc (μm), the maximum mountain height Rp (μm), the average length Rsm (μm), and the arithmetic mean height Ra (μm) were measured using a three-dimensional surface shape measuring device VertScan (manufactured by Ryoka System Co., Ltd., R5500H-M100 (Measurement conditions: wave mode, measurement wavelength 560nm, objective lens 50 times)) to determine. In addition, the determination of the maximum mountain height Rp (μm), the average length Rsm (μm), and the arithmetic mean height Ra (μm) complies with the provisions of JIS B 0601-2001. The measurement length of arithmetic mean height Ra (micrometer) shall be 100 micrometers or more and 200 micrometers or less. Rp-Rc-Ra≦0.20. . . Formula (X1) (Rp-Rc)/Ra≦5.0. . . Formula (X2) changes the objective lens of the VertScan 3D surface shape measurement device to 10 times, and uses the particle analysis of the same measurement device to achieve "arithmetic mean height Ra(μm)-15×10 -3 ( μm)-average height Rc(μm)”, cut in the plane direction and calculate the sum of the cross-sectional area. The value obtained by dividing the sum of the cross-sectional areas by the area of the measurement field of view was multiplied by 100 as the contact area ratio (CA) (%).

(13)輸入開始荷重測定(試驗方法1) 如圖6所示,對中心輥2上的積層薄膜(被處理薄膜)1的硬化型樹脂層,以濺鍍,由遮罩3內的靶4形成透明導電膜。靶4使用銦-錫複合氧化物的燒結靶、或者是不含氧化錫的氧化銦燒結靶,用3W/cm 2的電力密度投入電力,藉由DC磁控濺鍍法,形成透明導電膜。膜厚係改變薄膜通過靶上時的速度來控制。 以濺鍍法,在玻璃基板(尺寸:232mm×151mm)的單面形成厚度為20nm的銦-錫複合氧化物導電膜(氧化錫含量:10質量%)。具體而言,將厚度1.1mm的玻璃基板(尺寸:232mm×151mm)投入真空槽,抽真空至1.5×10 -4Pa。接著,在導入氧後導入氬,使總壓成為0.6Pa。氧對氬的流量比設為0.033。使用銦-錫複合氧化物(氧化錫含量:10質量%)的燒結靶,用3W/cm 2的電力密度投入電力,藉由DC磁控濺鍍法,在玻璃基板的單面形成厚度為20nm的銦-錫複合氧化物導電膜(氧化錫含量:10質量%)。在空氣中,在230℃下將成膜後的玻璃基板加熱1小時。在形成在玻璃基板的單面的導電膜的表面,以4mm間距將環氧樹脂(東洋紡股份有限公司製,製品名:CR-102C-23)的點狀間隙物(縱60μm×橫60μm×高5μm)形成為正方格子狀(ITO玻璃基板)。以ITO玻璃基板的四個角落中的任一角為起點,以形成190mm×135mm的長方形的方式在透明導電膜側貼上雙面膠帶(厚度:105μm、寬度6mm)。在貼在ITO玻璃基板的雙面膠帶上,貼附在實施例或比較例所得到的透明導電性薄膜(尺寸:220mm×135mm),以導電膜彼此面對面的方式進行積層。此時,使透明導電性薄膜的一短邊側從ITO玻璃基板超出(評價面板)。 將所得到的評價面板的ITO玻璃基板和透明導電性薄膜以測試機連結。從透明導電性薄膜側,用聚縮醛製的筆(Toray Plastic精工股份有限公司製,商品名:TPS(註冊商標) POM(NC),前端形狀:0.8mmR)持續施加荷重,將以測試機所測量的電阻值穩定時的荷重值設為輸入開始荷重。 用筆施加荷重的位置12係如圖7的局部放大圖所示,設為在ITO玻璃基板10面排列成格子狀的4個點狀間隙物11的中心區域。此外,輸入開始荷重係測定離雙面膠帶50mm以上的任意3點而取平均值。小數點後第一位係四捨五入。 此外,以與上述同樣的手法製作另一片評價面板,求出輸入開始荷重。將小數點後第一位四捨五入時,在二個輸入開始荷重一致的情況下,評價為輸入開始荷重穩定,在表6中顯示一個值。另一方面,在二個輸入開始荷重不一致的情況下,將二個結果顯示在表6。 (13) Input start load measurement (test method 1) As shown in Figure 6, the hardened resin layer of the laminated film (film to be processed) 1 on the center roll 2 is sputtered, and the target 4 in the mask 3 is sputtered. A transparent conductive film is formed. The target 4 is a sintered target of indium-tin composite oxide or an indium oxide sintered target not containing tin oxide. Electric power is applied at a power density of 3W/cm 2 , and a transparent conductive film is formed by DC magnetron sputtering. Film thickness is controlled by varying the speed at which the film passes over the target. An indium-tin composite oxide conductive film (tin oxide content: 10% by mass) with a thickness of 20 nm was formed on one side of a glass substrate (size: 232 mm×151 mm) by sputtering. Specifically, a glass substrate (size: 232 mm×151 mm) having a thickness of 1.1 mm was put into a vacuum chamber, and the vacuum was evacuated to 1.5×10 -4 Pa. Next, after oxygen was introduced, argon was introduced to make the total pressure 0.6 Pa. The flow ratio of oxygen to argon was set at 0.033. Using a sintered target of indium-tin composite oxide (tin oxide content: 10% by mass), input power at a power density of 3W/cm 2 , and form a 20nm-thick layer on one side of a glass substrate by DC magnetron sputtering. Indium-tin composite oxide conductive film (tin oxide content: 10% by mass). The film-formed glass substrate was heated at 230° C. for 1 hour in air. On the surface of the conductive film formed on one side of the glass substrate, dot-shaped spacers (60 μm in length x 60 μm in width x height) of epoxy resin (manufactured by Toyobo Co., Ltd., product name: CR-102C-23) were placed at a pitch of 4 mm. 5 μm) formed in a square grid (ITO glass substrate). Starting from any one of the four corners of the ITO glass substrate, a double-sided tape (thickness: 105 μm, width 6 mm) was attached to the transparent conductive film side to form a rectangle of 190 mm×135 mm. On the double-sided tape attached to the ITO glass substrate, the transparent conductive film (size: 220 mm x 135 mm) obtained in the example or comparative example was stuck, and the conductive films were laminated so that they faced each other. At this time, one short side of the transparent conductive film protruded from the ITO glass substrate (evaluation panel). The ITO glass substrate and the transparent conductive film of the obtained evaluation panel were connected by a testing machine. From the side of the transparent conductive film, a pen made of polyacetal (manufactured by Toray Plastic Seiko Co., Ltd., trade name: TPS (registered trademark) POM (NC), tip shape: 0.8mmR) is continuously applied to the test machine. The load value at which the measured resistance value is stable is set as the input start load. The position 12 where the load is applied with a pen, as shown in the partial enlarged view of FIG. 7 , is the central area of four dot-shaped spacers 11 arranged in a grid on the surface of the ITO glass substrate 10 . In addition, the input start load was measured at any 3 points more than 50 mm away from the double-sided tape, and an average value was obtained. The first digit after the decimal point is rounded off. In addition, another evaluation panel was produced in the same manner as above, and the input start load was obtained. When the first decimal place is rounded off, when the two input start loads match, it is evaluated that the input start load is stable, and one value is shown in Table 6. On the other hand, when the two input start loads do not match, the two results are shown in Table 6.

(14)電壓損失時間測定(試驗方法2) 將在輸入開始荷重測定所作成的評價面板連接於定電壓電源。接著,連接能夠測量ITO玻璃基板和透明導電性薄膜的電壓的記錄器(Keyence公司製,GR-7000)。此處,記錄器係為了觀測電壓的時間變化而使用。接著,向定電壓電源施加6V,用記錄器以0.02毫秒單位開始測量電壓。接著,從透明導電性薄膜側,用聚縮醛製的筆(Toray Plastic精工股份有限公司製,商品名:TPS(註冊商標) POM(NC),前端形狀:0.8mmR)以1秒鐘5次的步調施加50g的荷重。用筆施加荷重的位置係評價面板的中央附近,排列成格子狀的4個點狀間隙物的中心區域。從記錄器取出用筆對透明導電性薄膜施加荷重時的電壓的時間變化的資料。以筆開始離開透明導電性薄膜,電壓從6V開始減少時為起點,測定到電壓成為5V為止的時間,記錄為電壓損失時間(參照圖5)。 (14) Determination of voltage loss time (test method 2) Connect the evaluation panel created by the load measurement at the input start to a constant voltage power supply. Next, a recorder (manufactured by Keyence Corporation, GR-7000) capable of measuring the voltage of the ITO glass substrate and the transparent conductive film was connected. Here, the recorder is used to observe the temporal change of the voltage. Next, 6V was applied to the constant voltage power supply, and the voltage measurement was started with the recorder in units of 0.02 milliseconds. Next, from the side of the transparent conductive film, use a pen made of polyacetal (manufactured by Toray Plastic Seiko Co., Ltd., trade name: TPS (registered trademark) POM (NC), tip shape: 0.8mmR) five times per second. A load of 50 g is applied at a pace. The position where the load is applied with a pen is near the center of the evaluation panel, the center area of 4 dot-shaped gaps arranged in a grid. The time-change data of the voltage when the load was applied to the transparent conductive film with a pen was taken out from the recorder. Starting from the time when the pen started to separate from the transparent conductive film and the voltage began to decrease from 6V, the time until the voltage reached 5V was measured and recorded as the voltage loss time (see FIG. 5 ).

(15)適性輸入強度試驗(錯誤輸入防止性、舒適輸入性) 使用在實施例及比較例所得到的透明導電性薄膜來製作電阻膜式觸控面板。使用聚縮醛製的筆(Toray Plastic精工股份有限公司製,商品名:TPS(註冊商標) POM(NC),前端形狀:0.8mmR),調查輸入強度。 (錯誤輸入防止性) ○…一邊感到猶豫一邊碰觸到觸控面板時的輸入少。 ×…一邊感到猶豫一邊碰觸到觸控面板時的輸入多。 (舒適輸入性) ○…即使並未有意識地用力施壓,也能夠輸入。 △…舉動不穩定。 ×…若並未有意識地用力施壓,便有不能輸入的情況。 (15) Suitability input strength test (wrong input prevention, comfortable input) A resistive film type touch panel was produced using the transparent conductive thin film obtained in the Example and the comparative example. Using a polyacetal pen (manufactured by Toray Plastic Seiko Co., Ltd., trade name: TPS (registered trademark) POM (NC), tip shape: 0.8 mmR), the input strength was investigated. (prevention of wrong input) ○...There is little input when touching the touch panel while feeling hesitant. ×...There are many inputs when touching the touch panel while feeling hesitant. (comfortable input) ○...Enable input even without consciously exerting pressure. △... Behavior is unstable. ×...If you do not apply force consciously, you may not be able to input.

(16)輸入穩定性(捺型筆劃穩定性、快速書寫性) 使用在實施例及比較例所得到的透明導電性薄膜來作成電阻膜式觸控面板。使用聚縮醛製的筆,調查輸入穩定性。 (捺型筆劃穩定性) ○…輸入文字時,捺型筆劃部分很難變模糊。 ×…輸入文字時,捺型筆劃部分容易變模糊。 (快速書寫性) ○…連續輸入文字時,很難發生文字模糊。 ×…連續輸入文字時,容易發生文字模糊。 (16) Input stability (swipe stroke stability, fast writing) The resistive film type touch panel was produced using the transparent conductive thin film obtained in the Example and the comparative example. Input stability was checked using a polyacetal pen. (Swipe stroke stability) ○...When inputting characters, it is difficult to blur the strokes of the Na-shaped strokes. ×...When inputting characters, the strokes of the Na-shape tend to become blurred. (quick writing characteristics) ○...When continuously inputting characters, blurring of characters is less likely to occur. ×... When continuously inputting characters, blurring of the characters tends to occur.

(17)筆滑動耐久性(試驗方法6) 將透明導電性薄膜用作一側的面板板,在玻璃基板的單面上用濺鍍法形成厚度為20nm的銦-錫複合氧化物薄膜(氧化錫含量:10質量%),作為另一側的面板板。前述另一側的面板板的製造,具體而言,將厚度1.1mm的玻璃基板(尺寸:5cm×6cm)投入真空槽,抽真空至1.5×10 -4Pa。接著,在導入氧後導入氬,使總壓成為0.6Pa。氧對氬的流量比設為0.033。使用銦-錫複合氧化物(氧化錫含量:10質量%)的燒結靶,用3W/cm 2的電力密度投入電力,藉由DC磁控濺鍍法,在玻璃基板的單面形成厚度為20nm的銦-錫複合氧化物導電膜(氧化錫含量:10質量%)。在空氣中,在230℃下將成膜後的玻璃基板加熱1小時。在形成在玻璃基板的單面的導電膜的表面,如圖8所示,以4mm間距將環氧樹脂(東洋紡股份有限公司製,製品名:CR-102C-23)的珠粒(直徑30μm)形成為正方格子狀(ITO玻璃基板)。將在實施例或比較例所得到的透明導電性薄膜(尺寸:5cm×6cm)和ITO玻璃基板以透明導電膜相向的方式重疊。在重疊時,如圖9所示,使透明導電性薄膜20和ITO玻璃基板10的長度方向正交,同時使各自的端點16對齊,使透明導電性薄膜20的長度方向單側端部18、和ITO玻璃基板10的長度方向單側端部17從重疊面19超出,將超出部17、18分別連接於測試機。接著,對聚縮醛製的筆(Toray Plastic精工股份有限公司製,商品名:TPS(註冊商標) POM(NC),前端形狀:0.8mmR)施加2.5N的荷重,對觸控面板進行5萬次來回的直線滑動試驗。此時的滑動距離設為30mm,滑動速度設為180mm/秒。進行滑動的位置21係如圖8的局部放大圖所示,在ITO玻璃基板10面配置成格子狀的點狀間隙物11之間。在此滑動耐久性試驗後,測定用0.8N的筆荷重壓住滑動部之際的ON電阻(可動電極(薄膜電極)和固定電極接觸時的電阻值)。較理想的是ON電阻為10kΩ以下。 (17) Pen sliding durability (test method 6) A transparent conductive film is used as a panel plate on one side, and an indium-tin composite oxide film (oxidized Tin content: 10% by mass), as the panel board on the other side. For the production of the other panel panel, specifically, a glass substrate (size: 5 cm x 6 cm) with a thickness of 1.1 mm was put into a vacuum chamber, and the vacuum was evacuated to 1.5 x 10 -4 Pa. Next, after oxygen was introduced, argon was introduced to make the total pressure 0.6 Pa. The flow ratio of oxygen to argon was set at 0.033. Using a sintered target of indium-tin composite oxide (tin oxide content: 10% by mass), input power at a power density of 3W/cm 2 , and form a 20nm-thick layer on one side of a glass substrate by DC magnetron sputtering. Indium-tin composite oxide conductive film (tin oxide content: 10% by mass). The film-formed glass substrate was heated at 230° C. for 1 hour in air. On the surface of the conductive film formed on one side of the glass substrate, as shown in FIG. 8, beads (30 μm in diameter) of epoxy resin (manufactured by Toyobo Co., Ltd., product name: CR-102C-23) were placed at a pitch of 4 mm. Formed in a square lattice shape (ITO glass substrate). The transparent conductive film (size: 5 cm x 6 cm) and the ITO glass substrate obtained in Examples or Comparative Examples were stacked so that the transparent conductive films faced each other. When overlapping, as shown in Figure 9, make the longitudinal direction of transparent conductive film 20 and ITO glass substrate 10 orthogonal, make respective terminal point 16 align simultaneously, make the longitudinal direction one-side end 18 of transparent conductive film 20 , and the one-side end 17 in the longitudinal direction of the ITO glass substrate 10 protrude from the overlapping surface 19, and the protruding parts 17 and 18 are respectively connected to a testing machine. Next, a load of 2.5 N was applied to a polyacetal pen (manufactured by Toray Plastic Seiko Co., Ltd., trade name: TPS (registered trademark) POM (NC), tip shape: 0.8mmR), and the touch panel was subjected to 50,000 strokes. back-and-forth linear sliding test. The sliding distance at this time was set to 30 mm, and the sliding speed was set to 180 mm/sec. The sliding position 21 is, as shown in the partially enlarged view of FIG. 8 , between dot-shaped spacers 11 arranged in a grid on the surface of the ITO glass substrate 10 . After the sliding durability test, the ON resistance (resistance value when the movable electrode (thin film electrode) and the fixed electrode are in contact) when the sliding portion was pressed with a pen load of 0.8N was measured. Ideally, the ON resistance is 10kΩ or less.

2.積層薄膜 在實施例的欄位中,使用包含以下的透明塑膠薄膜基材、硬化型樹脂層、及功能層的積層薄膜。 (1)基材(透明塑膠薄膜基材):在兩面具有易接著層的雙軸配向透明PET薄膜(東洋紡公司製,A4380,厚度記載於表1)。 2. Laminated film In the field of the embodiment, a laminated film including the following transparent plastic film substrate, cured resin layer, and functional layer was used. (1) Substrate (transparent plastic film substrate): a biaxially aligned transparent PET film (manufactured by Toyobo Co., Ltd., A4380, the thickness of which is described in Table 1) having an easy-adhesive layer on both sides.

(2)硬化型樹脂層:在100質量份(固體成分)的含有光聚合起始劑的丙烯酸系樹脂(大日精化工業公司製,SEIKABEAM(註冊商標)EXF-01J)中,以表1記載的量摻合表1記載的個數平均粒徑的氧化矽粒子(粒子A、粒子B)。又,表1記載的粒子的添加量表示相對於樹脂的固體成分100質量%的量。以固體成分濃度成為表1的值的方式添加甲苯/甲基乙基酮(MEK)(8/2:質量比)的混合溶媒,加以攪拌使其均勻地分散而調製塗布液(塗布液A)。以塗膜的厚度成為表1記載的值的方式,使用梅爾棒(Myer bar)將調製好的塗布液A塗布於透明塑膠薄膜基材的單面。在80℃下進行1分鐘乾燥後,使用紫外線照射裝置(Eyegraphics公司製,UB042-5AM-W型)照射紫外線(光量:300mJ/cm 2),使塗膜硬化。 (2) Curing type resin layer: Described in Table 1 in 100 parts by mass (solid content) of acrylic resin (manufactured by Dainichi Seika Co., Ltd., SEIKABEAM (registered trademark) EXF-01J) containing a photopolymerization initiator Silicon oxide particles (particles A, particles B) having the number average particle diameters listed in Table 1 were blended in an amount of . In addition, the addition amount of the particle|grains described in Table 1 represents the quantity with respect to 100 mass % of solid content of resin. A mixed solvent of toluene/methyl ethyl ketone (MEK) (8/2: mass ratio) was added so that the solid content concentration became the value shown in Table 1, and stirred to uniformly disperse it to prepare a coating liquid (coating liquid A) . The prepared coating solution A was coated on one side of the transparent plastic film substrate using a Myer bar so that the thickness of the coating film became the value described in Table 1. After drying at 80° C. for 1 minute, the coating film was cured by irradiating ultraviolet rays (light intensity: 300 mJ/cm 2 ) using an ultraviolet irradiation device (manufactured by Eyegraphics, Inc., UB042-5AM-W type).

(3)功能層:在100質量份(固體成分)的含有光聚合起始劑的丙烯酸系樹脂(大日精化工業公司製,SEIKABEAM(註冊商標)EXF-01J)中,以表2記載的量摻合表2記載的個數平均粒徑的氧化矽粒子(粒子C)。又,表2記載的粒子的添加量表示相對於樹脂的固體成分100質量%的量。以固體成分濃度成為表2的值的方式添加甲苯/MEK(8/2:質量比)的混合溶媒作為溶劑,加以攪拌使其均勻地分散而調製塗布液(塗布液C)。以塗膜的厚度成為表2記載的值的方式,使用梅爾棒將調製好的塗布液C塗布於透明塑膠薄膜基材中的與上述硬化型樹脂層為相反側的面。在80℃下進行1分鐘乾燥後,使用紫外線照射裝置(Eyegraphics公司製,UB042-5AM-W型)照射紫外線(光量:300mJ/cm 2),使塗膜硬化。 (3) Functional layer: the amount described in Table 2 in 100 parts by mass (solid content) of acrylic resin (manufactured by Dainichi Seika Co., Ltd., SEIKABEAM (registered trademark) EXF-01J) containing a photopolymerization initiator Silicon oxide particles (particles C) having a number average particle diameter described in Table 2 were blended. In addition, the addition amount of the particle|grains described in Table 2 represents the quantity with respect to 100 mass % of solid content of resin. A mixed solvent of toluene/MEK (8/2: mass ratio) was added as a solvent so that the solid content concentration became the value shown in Table 2, and stirred to uniformly disperse it to prepare a coating liquid (coating liquid C). The prepared coating solution C was applied to the surface of the transparent plastic film substrate opposite to the above-mentioned curable resin layer using a Mel bar so that the thickness of the coating film became the value described in Table 2. After drying at 80° C. for 1 minute, the coating film was cured by irradiating ultraviolet rays (light intensity: 300 mJ/cm 2 ) using an ultraviolet irradiation device (manufactured by Eyegraphics, Inc., UB042-5AM-W type).

實施例1~8 將積層薄膜投入真空槽,抽真空至1.5×10 -4Pa。接著,在導入氧後導入氬,使總壓成為0.6Pa。將氧和氬的流量比顯示於表3。 如圖6所示,對中心輥2上的積層薄膜(被處理薄膜)1的硬化型樹脂層,以濺鍍,由遮罩3內的靶4形成透明導電膜。靶4使用銦-錫複合氧化物的燒結靶、或者是不含氧化錫的氧化銦燒結靶,用3W/cm 2的電力密度投入電力,藉由DC磁控濺鍍法,形成透明導電膜。膜厚係改變薄膜通過靶上時的速度來控制。 此外,對於濺鍍時的成膜氣體環境的水對非活性氣體的分壓比係使用氣體分析裝置(Inficon公司製,Transpector XPR3)進行測定,顯示於表3。該水分的比係如表3記載般,依有無轟擊步驟、有無保護薄膜、薄膜卷端面的凹凸高低差、控制薄膜接觸行進的中心輥的溫度的調溫機的溫媒的溫度的調節,來進行調節。在前述轟擊步驟中,以SUS(不銹鋼)為靶,在0.5W/cm 2下進行RF濺鍍。RF濺鍍的導入氣體量係設為與導入真空裝置的實施例記載的氣體量相同。在使用保護薄膜時,使用厚度為65μm的聚乙烯薄膜。在該保護薄膜的單面塗布丙烯酸系黏著劑。在積層薄膜的形成透明導電膜的面的相反面貼附保護薄膜。前述溫媒的溫度係將相當於從朝薄膜卷開始成膜時到結束成膜時的溫度的最大值和最小值的正中間的溫度作為表3的記載值。 對積層了透明導電膜的薄膜施加表3所示的熱處理而得到透明導電性薄膜。 針對所得到的透明導電性薄膜,評價透明導電膜的膜厚、結晶化度、總光線透射率(%)、表面電阻(Ω/□)、對透明導電膜的附著性、對功能層的附著性。將結果顯示在表4。 Examples 1-8 The laminated film was put into a vacuum chamber, and the vacuum was evacuated to 1.5×10 -4 Pa. Next, after oxygen was introduced, argon was introduced to make the total pressure 0.6 Pa. Table 3 shows the flow ratios of oxygen and argon. As shown in FIG. 6 , the hardened resin layer of the laminated film (film to be processed) 1 on the center roll 2 is sputtered to form a transparent conductive film from the target 4 in the mask 3 . The target 4 is a sintered target of indium-tin composite oxide or an indium oxide sintered target not containing tin oxide. Electric power is applied at a power density of 3W/cm 2 , and a transparent conductive film is formed by DC magnetron sputtering. Film thickness is controlled by varying the speed at which the film passes over the target. In addition, the partial pressure ratio of water to inert gas in the film-forming gas environment during sputtering was measured using a gas analyzer (manufactured by Inficon, Transpector XPR3), and is shown in Table 3. The ratio of this moisture is as recorded in Table 3, depending on whether there is a bombardment step, whether there is a protective film, the unevenness of the end surface of the film roll, and the adjustment of the temperature of the temperature medium of the temperature control machine that controls the temperature of the center roll that the film contacts and travels. Make adjustments. In the aforementioned bombardment step, SUS (stainless steel) was used as a target, and RF sputtering was performed at 0.5 W/cm 2 . The amount of gas introduced into RF sputtering was the same as the amount of gas introduced into the vacuum apparatus described in the examples. When using a protective film, a polyethylene film with a thickness of 65 μm is used. An acrylic adhesive is applied to one side of the protective film. A protective film is attached to the surface of the laminated film opposite to the surface on which the transparent conductive film is formed. The temperature of the above-mentioned warm medium is the value described in Table 3, which corresponds to the temperature in the middle of the maximum value and the minimum value of the temperature from the start of film formation to the end of film formation. The heat treatment shown in Table 3 was applied to the film laminated with the transparent conductive film to obtain a transparent conductive film. For the obtained transparent conductive film, the film thickness, crystallinity, total light transmittance (%), surface resistance (Ω/□), adhesion to the transparent conductive film, and adhesion to the functional layer of the transparent conductive film were evaluated. sex. The results are shown in Table 4.

針對所得到的透明導電性薄膜,求出剛軟度(BR)、平均最大山高(AVSp)、接觸面積率(CA)、最大山高上側位移率(MXSp/AVSp)、最大山高下側位移率(MNSp/AVSp)。將結果顯示在表5。For the obtained transparent conductive film, stiffness (BR), average maximum peak height (AVSp), contact area ratio (CA), maximum peak height upper side displacement rate (MXSp/AVSp), maximum peak height lower side displacement rate ( MNSp/AVSp). The results are shown in Table 5.

針對所得到的透明導電性薄膜,調查輸入開始荷重、電壓損失時間、適性輸入強度試驗(錯誤輸入防止性、舒適輸入性)、輸入穩定性(捺型筆劃穩定性、快速書寫性)、及筆滑動耐久性。將結果顯示在表6。For the obtained transparent conductive film, the load at the start of input, the voltage loss time, the suitability input strength test (wrong input prevention, comfortable input), input stability (swipe-shaped stroke stability, fast writing property), and pen were investigated. Sliding durability. The results are shown in Table 6.

比較例1~8 除了使用以表1~表2所示的條件所作成的積層薄膜,以表3的條件形成透明導電膜外,與實施例1~8同樣地操作,作成透明導電性薄膜。將所得到的薄膜的諸特性顯示於表4~表6。 Comparative Examples 1-8 Except having used the laminated film produced under the conditions shown in Table 1-Table 2, and having formed a transparent conductive film under the condition of Table 3, it carried out similarly to Examples 1-8, and produced the transparent conductive film. Various characteristics of the obtained thin film are shown in Table 4 - Table 6.

[表1]   基材 硬化型樹脂層 厚度 (μm) 有無 硬化型 樹脂層 粒子A 添加量 (wt%) 粒子B 添加量 (wt%) 粒子A 粒徑 (μm) 粒子B 粒徑 (μm) 固體成分濃度 (%) 厚度 (μm) 實施例1 188 5 9 1.00 0.30   47 6.0 實施例2 188 1 -   0.10 45 5.0 實施例3 125 15 -   0.05 45 6.0 實施例4 250 4 4 0.40 0.20   50 3.0 實施例5 250 3 11 1.80 0.70   55 5.0 實施例6 188 10 -   0.40 55 15.0 實施例7 188 3 5 0.70 0.40   60 4.0 實施例8 188 9 -   0.10 55 15.0 比較例1 188 27 -   0.60 45 5.0 比較例2 100 40 -   0.10 45 15.0 比較例3 300 - - - - - - - 比較例4 250 4 11 2.00 0.70   58 5.0 比較例5 188 - 30 -   0.60 65 4.0 比較例6 188 35 -   0.10 45 9.0 比較例7 188 5 9 1.00 0.40   60 4.0 比較例8 250 - - - - - - - [Table 1] Substrate Hardened resin layer Thickness (μm) With or without hardened resin layer Amount of particle A added (wt%) Particle B addition amount (wt%) Particle A Particle size (μm) Particle B Particle size (μm) Solid content concentration (%) Thickness (μm) Example 1 188 have 5 9 1.00 0.30 47 6.0 Example 2 188 have none 1 - 0.10 45 5.0 Example 3 125 have none 15 - 0.05 45 6.0 Example 4 250 have 4 4 0.40 0.20 50 3.0 Example 5 250 have 3 11 1.80 0.70 55 5.0 Example 6 188 have none 10 - 0.40 55 15.0 Example 7 188 have 3 5 0.70 0.40 60 4.0 Example 8 188 have none 9 - 0.10 55 15.0 Comparative example 1 188 have none 27 - 0.60 45 5.0 Comparative example 2 100 have none 40 - 0.10 45 15.0 Comparative example 3 300 none - - - - - - - Comparative example 4 250 have 4 11 2.00 0.70 58 5.0 Comparative Example 5 188 have - 30 - 0.60 65 4.0 Comparative example 6 188 have none 35 - 0.10 45 9.0 Comparative Example 7 188 have 5 9 1.00 0.40 60 4.0 Comparative Example 8 250 none - - - - - - -

[表2]   功能層 有無 功能層 粒子C 添加量 (Wt%) 粒子C 粒徑 (μm) 固體成分濃度 (%) 厚度 (μm) 實施例1 15.0 3.00 50 3.0 實施例2 15.0 3.00 50 3.0 實施例3 20.0 3.00 50 4.0 實施例4 1.0 3.00 50 3.0 實施例5 5.0 3.00 50 6.0 實施例6 1.0 3.00 50 11.0 實施例7 15.0 3.00 50 6.0 實施例8 1.0 3.00 50 11.0 比較例1 28.0 3.00 50 6.0 比較例2 27.0 3.00 55 10.0 比較例3 1.0 3.00 50 4.0 比較例4 7.0 3.00 50 9.0 比較例5 15.0 3.00 50 1.0 比較例6 15.0 3.00 43 5.0 比較例7 10.0 3.00 60 2.0 比較例8 - - - - [Table 2] functional layer With or without functional layer Particle C Addition Amount (Wt%) Particle C Particle size (μm) Solid content concentration (%) Thickness (μm) Example 1 have 15.0 3.00 50 3.0 Example 2 have 15.0 3.00 50 3.0 Example 3 have 20.0 3.00 50 4.0 Example 4 have 1.0 3.00 50 3.0 Example 5 have 5.0 3.00 50 6.0 Example 6 have 1.0 3.00 50 11.0 Example 7 have 15.0 3.00 50 6.0 Example 8 have 1.0 3.00 50 11.0 Comparative example 1 have 28.0 3.00 50 6.0 Comparative example 2 have 27.0 3.00 55 10.0 Comparative example 3 have 1.0 3.00 50 4.0 Comparative example 4 have 7.0 3.00 50 9.0 Comparative Example 5 have 15.0 3.00 50 1.0 Comparative Example 6 have 15.0 3.00 43 5.0 Comparative Example 7 have 10.0 3.00 60 2.0 Comparative Example 8 none - - - -

[表3]   透明導電膜成膜條件 氧/Ar 流量比 水/Ar 分壓比 (×10 -3) 輥溫度 (℃) 轟擊步驟 保護薄膜 薄膜卷端面的 凹凸高低差 (mm) 氧化錫含量 (wt%) 熱處理 實施例1 0.049 1.40 -12 2 3 150℃ 60分鐘 實施例2 0.049 1.40 -12 2 3 150℃ 60分鐘 實施例3 0.049 1.40 -12 2 3 150℃ 60分鐘 實施例4 0.041 1.40 -12 2 36 150℃ 60分鐘 實施例5 0.046 1.30 -12 2 10 150℃ 60分鐘 實施例6 0.041 6.90 0 9 36 150℃ 60分鐘 實施例7 0.042 0.55 -12 5 1 165℃ 75分鐘 實施例8 0.008 0.80 -12 2 36 150℃ 60分鐘 比較例1 0.041 1.40 -12 2 36 150℃ 60分鐘 比較例2 0.049 1.10 -12 2 3 150℃ 60分鐘 比較例3 0.049 1.70 -12 2 3 150℃ 60分鐘 比較例4 0.049 1.80 -12 2 3 150℃ 60分鐘 比較例5 0.049 8.20 2 11 36 150℃ 60分鐘 比較例6 0.008 0.80 -12 2 0 80℃ 20分鐘 比較例7 0.049 1.40 -12 2 3 150℃ 60分鐘 比較例8 0.049 1.70 -12 2 45 150℃ 60分鐘 [table 3] Film forming conditions of transparent conductive film Oxygen/Ar flow ratio Water/Ar partial pressure ratio (×10 -3 ) Roll temperature (℃) bombardment step protective film Concave-convex height difference on the end surface of film roll (mm) Tin oxide content (wt%) heat treatment Example 1 0.049 1.40 -12 have have 2 3 150°C 60 minutes Example 2 0.049 1.40 -12 have have 2 3 150°C 60 minutes Example 3 0.049 1.40 -12 have have 2 3 150°C 60 minutes Example 4 0.041 1.40 -12 have have 2 36 150°C 60 minutes Example 5 0.046 1.30 -12 have have 2 10 150°C 60 minutes Example 6 0.041 6.90 0 have have 9 36 150°C 60 minutes Example 7 0.042 0.55 -12 have have 5 1 165°C 75 minutes Example 8 0.008 0.80 -12 have have 2 36 150°C 60 minutes Comparative example 1 0.041 1.40 -12 have have 2 36 150°C 60 minutes Comparative example 2 0.049 1.10 -12 have have 2 3 150°C 60 minutes Comparative example 3 0.049 1.70 -12 have have 2 3 150°C 60 minutes Comparative example 4 0.049 1.80 -12 have have 2 3 150°C 60 minutes Comparative Example 5 0.049 8.20 2 none none 11 36 150°C 60 minutes Comparative example 6 0.008 0.80 -12 have have 2 0 80°C 20 minutes Comparative Example 7 0.049 1.40 -12 have have 2 3 150°C 60 minutes Comparative Example 8 0.049 1.70 -12 have have 2 45 150°C 60 minutes

[表4]   透明導電性薄膜(1) 透明導電膜 膜厚 (nm) 結晶化度 (%) 總光線 透射率 (%) 表面電阻 (Ω/□) 透明導 電層的 附著性 試驗 (%) 功能層 的附著 性試驗 (%) 實施例1 23 100 87 450 100 100 實施例2 23 100 87 450 100 100 實施例3 23 100 87 450 100 100 實施例4 22 0 86 480 100 100 實施例5 21 0 86.9 250 100 100 實施例6 90 0 81 110 100 100 實施例7 13 70 87.5 570 100 100 實施例8 80 0 82 125 100 100 比較例1 23 0 87 450 100 100 比較例2 23 100 87 450 100 100 比較例3 23 100 87 450 10 100 比較例4 23 100 87 450 100 100 比較例5 8 0 88 1200 100 100 比較例6 110 100 68 1700 100 100 比較例7 23 100 87 450 100 100 比較例8 23 0 87 600 10 - [Table 4] Transparent Conductive Film(1) Thickness of transparent conductive film (nm) Crystallinity (%) Total light transmittance (%) Surface resistance (Ω/□) Adhesion test of transparent conductive layer (%) Adhesion test of functional layer (%) Example 1 twenty three 100 87 450 100 100 Example 2 twenty three 100 87 450 100 100 Example 3 twenty three 100 87 450 100 100 Example 4 twenty two 0 86 480 100 100 Example 5 twenty one 0 86.9 250 100 100 Example 6 90 0 81 110 100 100 Example 7 13 70 87.5 570 100 100 Example 8 80 0 82 125 100 100 Comparative example 1 twenty three 0 87 450 100 100 Comparative example 2 twenty three 100 87 450 100 100 Comparative example 3 twenty three 100 87 450 10 100 Comparative example 4 twenty three 100 87 450 100 100 Comparative Example 5 8 0 88 1200 100 100 Comparative Example 6 110 100 68 1700 100 100 Comparative Example 7 twenty three 100 87 450 100 100 Comparative Example 8 twenty three 0 87 600 10 -

[表5]   剛軟度BR 平均最大山高 AVSp (μm) 接觸面積率 CA (%) 最大山高 上側位移率 MXSp/AvSp 最大山高 下側位移率 MNSp/AVSp 剛軟度BR (N・cm) 式(2-1) 左邊 (A1) 式(2-1) 右邊 (A2) 式(2-3) 右邊 (A3) 實施例1 0.65 -0.545 1.255 38.4 1.236 41.3 1.24 0.76 實施例2 0.61 -0.733 1.067 37.1 0.053 92.1 1.13 0.83 實施例3 0.39 -1.767 0.033 29.9 0.030 94.9 1.10 0.87 實施例4 0.87 0.489 2.289 45.6 0.510 63.7 1.18 0.80 實施例5 0.89 0.583 2.383 46.2 2.350 48.0 1.32 0.64 實施例6 0.83 0.301 2.101 44.3 0.521 52.0 1.19 0.81 實施例7 0.57 -0.921 0.879 35.8 0.852 55.3 1.21 0.79 實施例8 0.78 0.066 1.866 42.6 0.077 88.2 1.19 0.77 比較例1 0.58 -0.869 0.931 36.1 0.694 35.3 1.20 0.81 比較例2 0.35 -1.941 -0.141 28.7 0.257 77.4 1.17 0.82 比較例3 0.95 0.865 2.665 48.2 0.004 100.0 1.25 0.75 比較例4 0.89 0.583 2.383 46.2 2.598 44.2 1.35 0.63 比較例5 0.66 -0.498 1.302 38.7 0.743 34.8 1.43 0.58 比較例6 0.80 0.160 1.960 43.3 0.149 82.1 1.14 0.84 比較例7 0.63 -0.639 1.161 37.7 1.425 34.4 1.27 0.72 比較例8 0.91 0.677 2.477 46.9 0.004 100.0 1.25 0.75 [table 5] Rigidity BR Average maximum mountain height AVSp (μm) Contact area ratio CA (%) Maximum mountain height upper side displacement rate MXSp/AvSp Displacement rate MNSp/AVSp at the lower side of the maximum mountain height Rigidity BR (N・cm) Formula (2-1) left side (A1) Formula (2-1) right side (A2) Formula (2-3) right side (A3) Example 1 0.65 -0.545 1.255 38.4 1.236 41.3 1.24 0.76 Example 2 0.61 -0.733 1.067 37.1 0.053 92.1 1.13 0.83 Example 3 0.39 -1.767 0.033 29.9 0.030 94.9 1.10 0.87 Example 4 0.87 0.489 2.289 45.6 0.510 63.7 1.18 0.80 Example 5 0.89 0.583 2.383 46.2 2.350 48.0 1.32 0.64 Example 6 0.83 0.301 2.101 44.3 0.521 52.0 1.19 0.81 Example 7 0.57 -0.921 0.879 35.8 0.852 55.3 1.21 0.79 Example 8 0.78 0.066 1.866 42.6 0.077 88.2 1.19 0.77 Comparative example 1 0.58 -0.869 0.931 36.1 0.694 35.3 1.20 0.81 Comparative example 2 0.35 -1.941 -0.141 28.7 0.257 77.4 1.17 0.82 Comparative example 3 0.95 0.865 2.665 48.2 0.004 100.0 1.25 0.75 Comparative example 4 0.89 0.583 2.383 46.2 2.598 44.2 1.35 0.63 Comparative Example 5 0.66 -0.498 1.302 38.7 0.743 34.8 1.43 0.58 Comparative example 6 0.80 0.160 1.960 43.3 0.149 82.1 1.14 0.84 Comparative Example 7 0.63 -0.639 1.161 37.7 1.425 34.4 1.27 0.72 Comparative Example 8 0.91 0.677 2.477 46.9 0.004 100.0 1.25 0.75

[表6]   輸入 開始 荷重 (g) 電壓 損失 時間 (ms) 錯誤輸入 防止性 舒適 輸入性 捺型筆劃 穩定性 快速 書寫性 筆滑動 耐久性 (電阻・(kΩ) 實施例1 16 0.38 0.1 實施例2 21 0.12 0.1 實施例3 16 0.07 0.1 實施例4 25 0.27 9 實施例5 16 0.39 8 實施例6 23 0.39 2 實施例7 16 0.25 0.3 實施例8 25 0.14 3 比較例1 17 0.43 × × 8 比較例2 15 0.15 × 0.8 比較例3 37 0.13 × 比較例4 15 0.45 × × × 0.1 比較例5 18、20 有變異 0.41 × × 15 比較例6 26 0.18 × 0.1 比較例7 14 0.42 × × × 0.1 比較例8 34 0.07 × [產業上利用之可能性] [Table 6] Enter the starting load (g) Voltage loss time (ms) Wrong entry prevention comfort input Na stroke stability fast writing Pen sliding durability (resistance・(kΩ) Example 1 16 0.38 0.1 Example 2 twenty one 0.12 0.1 Example 3 16 0.07 0.1 Example 4 25 0.27 9 Example 5 16 0.39 8 Example 6 twenty three 0.39 2 Example 7 16 0.25 0.3 Example 8 25 0.14 3 Comparative example 1 17 0.43 x x 8 Comparative example 2 15 0.15 x 0.8 Comparative example 3 37 0.13 x Comparative example 4 15 0.45 x x x 0.1 Comparative Example 5 18, 20 have variation 0.41 x x 15 Comparative Example 6 26 0.18 x 0.1 Comparative Example 7 14 0.42 x x x 0.1 Comparative Example 8 34 0.07 x [Possibility of industrial use]

透明導電性薄膜,能夠作為液晶顯示器、電致發光(EL)顯示器等之類的平面顯示器、觸控面板的透明電極等而廣泛用於電器•電子領域的用途上。The transparent conductive film can be widely used in the fields of electrical appliances and electronics as flat-panel displays such as liquid crystal displays and electroluminescence (EL) displays, transparent electrodes of touch panels, and the like.

1:被處理薄膜 2:中心輥 3:遮罩 4:靶 5:透明導電膜 6:硬化型樹脂層 7:透明塑膠薄膜基材 8:功能層 9:易接著劑層 10:ITO玻璃基板 11:點狀間隙物 12:用筆施加荷重的位置 13:時間 14:電壓 15:電壓損失時間 16:端點 17,18:超出部 19:重疊面 20:透明導電性薄膜 21:進行滑動的位置 1: Treated film 2: Center roll 3: mask 4: target 5: Transparent conductive film 6: Hardened resin layer 7: Transparent plastic film substrate 8: Functional layer 9: Easy adhesive layer 10: ITO glass substrate 11: Point gap 12: The position where the load is applied with a pen 13: time 14: Voltage 15: Voltage loss time 16: Endpoint 17,18: beyond the part 19: Overlapping faces 20: Transparent conductive film 21: Position for sliding

圖1係顯示本發明的透明導電性薄膜的一例的概略側面圖。 圖2係顯示本發明的透明導電性薄膜的另一例的概略側面圖。 圖3係顯示本發明的透明導電性薄膜的又另一例的概略側面圖。 圖4係顯示本發明的透明導電性薄膜的其他例的概略側面圖。 圖5係顯示本發明的一態樣中的電壓和時間的關係的概念圖。 圖6係顯示本發明的成膜方法的一例的裝置概略圖。 圖7係供說明本發明中的輸入開始荷重測定方法用的概略平面局部放大圖。 圖8係供說明本發明中的筆滑動耐久性測定法用的概略平面局部放大圖。 圖9係供說明本發明中的筆滑動耐久性測定法用的概略平面圖。 Fig. 1 is a schematic side view showing an example of the transparent conductive film of the present invention. Fig. 2 is a schematic side view showing another example of the transparent conductive film of the present invention. Fig. 3 is a schematic side view showing still another example of the transparent conductive film of the present invention. Fig. 4 is a schematic side view showing another example of the transparent conductive film of the present invention. FIG. 5 is a conceptual diagram showing the relationship between voltage and time in one aspect of the present invention. Fig. 6 is a schematic diagram of an apparatus showing an example of the film forming method of the present invention. Fig. 7 is a schematic plan partial enlarged view for explaining the method of measuring the input start load in the present invention. Fig. 8 is a schematic plan partial enlarged view for explaining the pen sliding durability measurement method in the present invention. Fig. 9 is a schematic plan view for explaining the pen sliding durability measurement method in the present invention.

無。none.

Claims (10)

一種透明導電性薄膜,其係在透明塑膠薄膜基材上的至少一面積層有銦-錫複合氧化物的透明導電膜的透明導電性薄膜, 以試驗方法1所求出的輸入開始荷重係大於15g並為25g以下, 以試驗方法2所求出的電壓損失時間係0.00毫秒以上0.40毫秒以下, [試驗方法1] 在玻璃基板的單面形成厚度為20nm的銦-錫複合氧化物導電膜(氧化錫含量:10質量%),在該薄膜的表面,以4mm間距將環氧樹脂的點狀間隙物(縱60μm×橫60μm×高5μm)形成為正方格子狀而作為面板板,在此面板板的導電膜側,夾著厚度為105μm、內周為190mm×135mm的有接著性的矩形框,同時以導電膜彼此面對面的方式重疊透明導電性薄膜而製作評價面板,從此評價面板的透明導電性薄膜側,用前端為半徑0.8mm半球狀的聚縮醛的筆持續按壓點狀間隙物的4點格子的中心,將電阻值開始穩定時的壓力設為輸入開始荷重, [試驗方法2] 將該評價面板連接於6V的定電壓電源,從透明導電性薄膜側,使用前端為半徑0.8mm半球狀的筆,以50gf的荷重,以5次/秒的間隔按壓點狀間隙物的4點格子的中心,以筆開始離開透明導電性薄膜,電壓從6V開始減少時為起點,測定到電壓成為5V為止的時間,設為電壓損失時間。 A transparent conductive film, which is a transparent conductive film with at least one area layer of a transparent conductive film of indium-tin composite oxide on a transparent plastic film substrate, The initial input load calculated by test method 1 is greater than 15g and less than 25g, The voltage loss time obtained by test method 2 is 0.00 milliseconds to 0.40 milliseconds, [Test method 1] On one side of the glass substrate, an indium-tin composite oxide conductive film (tin oxide content: 10% by mass) was formed with a thickness of 20 nm, and dot-shaped spacers (60 μm in length) of epoxy resin were placed on the surface of the film at a pitch of 4 mm. × 60 μm in width × 5 μm in height) is formed into a square grid as a panel plate, and a rectangular frame with a thickness of 105 μm and an inner circumference of 190 mm × 135 mm with adhesion is sandwiched on the conductive film side of the panel plate. The evaluation panel was made by stacking transparent conductive films facing each other. From the transparent conductive film side of the evaluation panel, the center of the 4-dot grid of dot-shaped spacers was continuously pressed with a polyacetal pen whose tip was hemispherical with a radius of 0.8 mm. , set the pressure when the resistance value starts to stabilize as the input load, [Test method 2] Connect this evaluation panel to a constant voltage power supply of 6V, and use a hemispherical pen with a tip of 0.8 mm in radius from the transparent conductive film side to press 4 points of the dot-shaped spacer at intervals of 5 times/second with a load of 50 gf At the center of the grid, the pen starts to separate from the transparent conductive film and the voltage starts to decrease from 6V as a starting point, and the time until the voltage reaches 5V is measured, and is defined as the voltage loss time. 如請求項1的透明導電性薄膜,其中以試驗方法3所求出的薄膜剛軟度(BR)係0.38N.cm以上0.90N.cm以下, 以試驗方法4所求出的導電面的最大山高Sp的平均(AVSp)滿足下述式(2-1)及式(2-2), 以試驗方法5所求出的接觸面積率(CA)滿足下述式(2-3), 4.7×BR-3.6≦AVSp<4.7×BR-1.8...式(2-1) 0.005≦AVSp≦12.000...式(2-2) CA≧32.6×BR+17.2...式(2-3) (式中,BR係薄膜剛軟度(N.cm),AVSp係平均最大山高(μm),CA係接觸面積率(%)) [試驗方法3] 使透明導電膜朝上地將20mm×250mm的透明導電性薄膜試驗片放置於水平台上,使試驗片從水平台的端點突出230mm的長度,基於下述式決定剛軟度(BR), 剛軟度(BR(N.cm))=g×a×b×L 4/(8×δ×10 11) (式中,g係9.81(重力加速度;m/s 2),a係20(試驗片的短邊的長度;mm),b表示試驗片的比重(g/cm 3),L係230(露出在水平台之外的試驗片的長邊的長度;mm),δ表示試驗片前端的高度和水平台的高度的差(cm)) [試驗方法4] 在透明導電性薄膜的導電面上,在MD方向上以1cm間隔決定出3點,從其中心起以1cm間隔、在TD方向上對稱地決定出2點,合計5點的測定點,在各地方測定基於面粗糙度的最大山高Sp(根據ISO 25178),將其平均值設為平均最大山高(AVSp)(μm), [試驗方法5] 針對透明導電性薄膜的導電面,測定基於線粗糙度的平均高度Rc(μm)、最大山高Rp(μm)、及平均長度Rsm(μm),在滿足式(X1)及式(X2)中的至少一者和式(X3)的場所,測定基於線粗糙度的算術平均高度Ra(μm),又,平均高度Rc(μm)、最大山高Rp(μm)、平均長度Rsm(μm)、及算術平均高度Ra(μm)係使用3維表面形狀測定裝置VertScan(菱化System公司製,R5500H-M100(測定條件:wave模式,測定波長560nm,物鏡50倍))來決定,最大山高Rp(μm)、平均長度Rsm(μm)、及算術平均高度Ra(μm)的決定係遵照JIS B 0601-2001的規定,算術平均高度Ra(μm)的測定長度設為100μm以上200μm以下, Rp-Rc-Ra≦0.20...式(X1) (Rp-Rc)/Ra≦5.0...式(X2) Rsm≦30...式(X3) 將該3維表面形狀測定裝置VertScan的物鏡變更為10倍,使用同測定裝置所具有的粒子解析,在離平均面達到「算術平均高度Ra(μm)-15×10 -3(μm)-平均高度Rc(μm)」的高度處,在平面方向上進行截切(slice),求出截面積的總和,將以下的值設為接觸面積率(CA)(%):將截面積的總和除以測定視野的面積的值乘以100。 Such as the transparent conductive film of claim 1, wherein the rigidity (BR) of the film obtained by test method 3 is 0.38N. 0.90N above cm. cm or less, the average (AVSp) of the maximum peak height Sp of the conductive surface obtained by test method 4 satisfies the following formula (2-1) and formula (2-2), and the contact area ratio obtained by test method 5 (CA) satisfies the following formula (2-3): 4.7×BR-3.6≦AVSp<4.7×BR-1.8. . . Formula (2-1) 0.005≦AVSp≦12.000. . . Formula (2-2) CA≧32.6×BR+17.2. . . Formula (2-3) (In the formula, the stiffness and softness of the BR series film (N.cm), the average maximum mountain height of the AVSp series (μm), and the contact area ratio of the CA series (%)) [Test method 3] Make the transparent conductive film toward Put the 20mm×250mm transparent conductive film test piece on the horizontal platform, make the test piece protrude from the end point of the horizontal platform by a length of 230mm, and determine the rigidity (BR) based on the following formula, the rigidity (BR) (N.cm))=g×a×b×L 4 /(8×δ×10 11 ) (In the formula, g is 9.81 (gravity acceleration; m/s 2 ), a is 20 (the short side of the test piece length of the test piece; mm), b represents the specific gravity of the test piece (g/cm 3 ), L is 230 (the length of the long side of the test piece exposed outside the horizontal platform; mm), and δ represents the height of the front end of the test piece and the water level Difference in platform height (cm)) [Test method 4] On the conductive surface of the transparent conductive film, three points are determined at intervals of 1 cm in the MD direction, and symmetrically arranged at intervals of 1 cm from the center in the TD direction Determine 2 points, a total of 5 measurement points, measure the maximum peak height Sp (according to ISO 25178) based on surface roughness at each place, and set the average value as the average maximum peak height (AVSp) (μm), [Test method 5 ] For the conductive surface of the transparent conductive film, the average height Rc (μm), the maximum peak height Rp (μm), and the average length Rsm (μm) based on the line roughness are measured, and the formula (X1) and formula (X2) are satisfied At least one of the formula (X3) place, measure the arithmetic mean height Ra (μm) based on the line roughness, and the average height Rc (μm), the maximum height Rp (μm), the average length Rsm (μm), and The arithmetic mean height Ra (μm) is determined using a 3-dimensional surface shape measurement device VertScan (manufactured by Ryoka System Co., Ltd., R5500H-M100 (measurement conditions: wave mode, measurement wavelength 560nm, objective lens 50 times)), and the maximum mountain height Rp (μm ), the average length Rsm (μm), and the arithmetic mean height Ra (μm) are determined in accordance with the provisions of JIS B 0601-2001. Ra≦0.20. . . Formula (X1) (Rp-Rc)/Ra≦5.0. . . Formula (X2) Rsm≦30. . . Formula (X3) Change the objective lens of the VertScan 3D surface shape measurement device to 10 times, and use the particle analysis of the same measurement device to achieve "arithmetic mean height Ra(μm)-15×10 -3 ( μm)-average height Rc(μm)", slice in the plane direction, find the sum of the cross-sectional area, and set the following value as the contact area ratio (CA) (%): The sum of the areas divided by the area of the measured field of view was multiplied by 100. 如請求項2的透明導電性薄膜,其中以該試驗方法4所求出的最大山高Sp的最大值MXSp係超過該平均最大山高AVSp的1.0倍並為1.4倍以下,且 以該試驗方法4所求出的最大山高Sp的最小值MNSp係該平均最大山高AVSp的0.6倍以上1.0倍以下。 The transparent conductive film according to claim 2, wherein the maximum value MXSp of the maximum peak height Sp obtained by the test method 4 is more than 1.0 times and not more than 1.4 times the average maximum peak height AVSp, and The minimum value MNSp of the maximum mountain height Sp obtained by this test method 4 is 0.6 times or more and 1.0 times or less of the average maximum mountain height AVSp. 如請求項1至3中任一項的透明導電性薄膜,其中該透明導電膜的厚度為10nm以上100nm以下。The transparent conductive film according to any one of claims 1 to 3, wherein the thickness of the transparent conductive film is not less than 10 nm and not more than 100 nm. 如請求項1至3中任一項的透明導電性薄膜,其中該透明導電膜中所含的氧化錫的濃度為0.5質量%以上40質量%以下。The transparent conductive film according to any one of claims 1 to 3, wherein the concentration of tin oxide contained in the transparent conductive film is not less than 0.5% by mass and not more than 40% by mass. 如請求項1至3中任一項的透明導電性薄膜,其中在透明導電膜與透明塑膠薄膜基材之間,具有硬化型樹脂層, 進一步在透明塑膠基材的與該透明導電膜為相反的側,具有功能層。 The transparent conductive film according to any one of claims 1 to 3, wherein there is a cured resin layer between the transparent conductive film and the transparent plastic film substrate, Further, there is a functional layer on the side opposite to the transparent conductive film of the transparent plastic substrate. 如請求項1至3中任一項的透明導電性薄膜,其中在透明塑膠薄膜基材的至少一側具有易接著層。The transparent conductive film according to any one of claims 1 to 3, wherein at least one side of the transparent plastic film substrate has an easy-adhesive layer. 如請求項7的透明導電性薄膜,其中易接著層係配置在透明塑膠薄膜基材與硬化型樹脂層之間、或透明塑膠基材與功能層之間中的至少一個位置。The transparent conductive film according to claim 7, wherein the easy-adhesive layer is arranged at least one of between the transparent plastic film substrate and the cured resin layer, or between the transparent plastic substrate and the functional layer. 如請求項1至3中任一項的透明導電性薄膜,其中以試驗方法6所規定的ON電阻為10kΩ以下, [試驗方法6] 隔著直徑30μm的環氧珠粒,以導電膜彼此面對面的方式重疊在玻璃基板的單面形成了厚度為20nm的銦-錫複合氧化物導電膜(氧化錫含量:10質量%)的面板板、和透明導電性薄膜而作成評價面板,在此評價面板的透明導電性薄膜側,用前端為半徑0.8mm半球狀的聚縮醛的筆一邊施加2.5N的荷重,一邊進行滑動(來回次數5萬次,滑動距離30mm,滑動速度180mm/秒),滑動後,用0.8N的筆荷重按住滑動部,測定電性連接時的電阻(ON電阻)。 The transparent conductive film according to any one of claims 1 to 3, wherein the ON resistance specified by test method 6 is 10kΩ or less, [Test method 6] A panel board in which an indium-tin composite oxide conductive film (tin oxide content: 10% by mass) with a thickness of 20 nm is formed on one side of a glass substrate so that the conductive films face each other through epoxy beads with a diameter of 30 μm. , and a transparent conductive film to make an evaluation panel, on the side of the transparent conductive film of the evaluation panel, use a pen with a hemispherical polyacetal pen with a radius of 0.8mm to slide while applying a load of 2.5N (the number of times of reciprocation is 5 Ten thousand times, sliding distance 30mm, sliding speed 180mm/sec), after sliding, press the sliding part with a pen load of 0.8N, and measure the resistance (ON resistance) at the time of electrical connection. 如請求項1至3中任一項的透明導電性薄膜,其中在透明導電膜的表面上的根據JIS K5600-5-6:1999的附著性試驗中,透明導電膜的殘留面積率為95%以上。The transparent conductive film according to any one of claims 1 to 3, wherein in the adhesion test according to JIS K5600-5-6:1999 on the surface of the transparent conductive film, the residual area ratio of the transparent conductive film is 95% above.
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