TWI812938B - Biometric sensing apparatus - Google Patents

Abstract

A biometric sensing apparatus including a light sensing device, a first light shielding layer, a second light shielding layer and a capacitive sensing device is provided. The light sensing device is disposed on a substrate. The first light shielding layer is disposed on the light sensing device. The first light shielding layer has a first pinhole corresponding to the light sensing device. The second light shielding layer is disposed on the first light shielding layer. The second light shielding layer has a second pinhole corresponding to the first pinhole. At least one of the first light shielding layer and the second light shielding layer is the first sensing electrode of the capacitive sensing device.

Description

biometric sensing device

The present invention relates to a sensing device, and in particular to a biometric sensing device.

General optical under-screen fingerprint modules often have the problem of being too thick. In addition, how to improve the anti-counterfeiting identification capabilities of optical under-screen fingerprint modules is also a topic of current research.

The present invention provides a biometric sensing device, which can have a thinner thickness and/or better identification performance.

The biometric sensing device of the present invention includes a light sensing element, a first light shielding layer, a second light shielding layer and a capacitive sensing element. The light sensing element is arranged on the substrate. The first light-shielding layer is disposed on the light sensing element. The first light shielding layer has a first hole corresponding to the light sensing element. The second light-shielding layer is disposed on the first light-shielding layer. The second light-shielding layer has second holes corresponding to the first holes. At least one of the first light-shielding layer and the second light-shielding layer is a first sensing electrode of the capacitive sensing element.

Based on the above, by using at least one of the first light-shielding layer and the second light-shielding layer as the first sensing electrode of the capacitive sensing element, the thickness of the biometric sensing device can be made thinner. In addition, through the integration of light sensing elements and capacitive sensing elements, the biometric sensing device can have better identification performance (such as improving the anti-counterfeiting identification capability of the optical under-screen fingerprint module, but it does not limit).

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, embodiments are given below and described in detail with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the invention.

In the drawings, the thicknesses of components and the like are exaggerated for clarity. Throughout this specification, the same reference numbers refer to the same elements. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on," "connected to" or "overlapping" another element, it can be directly on the other element. on or connected to another element, or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections or parts thereof shall not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "third element", "component", "region", "layer" or "section" discussed below could be termed a second element, component, region, layer or section, and relative to a "second element" ”, “component”, “region”, “layer” or “section” could be referred to as a third element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms including "at least one" unless the content clearly dictates otherwise. "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will also be understood that when used in this specification, the terms "comprises" and/or "includes" designate the presence of stated features, regions, integers, steps, operations, elements and/or components but do not exclude one or more The presence or addition of other features, regions, steps, operations, elements, parts and/or combinations thereof.

Additionally, relative terms, such as "lower" and "upper," may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation illustrated in the figures. For example, if the device in one of the figures is turned over, elements described as "lower" than other elements would then be oriented "upper" than the other elements. Thus, the exemplary term "lower" may include both "lower" and "upper" orientations, depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "lower" may include both upper and lower orientations.

As used herein, "substantially" or other similar terms include the stated value and the average within an acceptable range of deviations from the particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and errors associated with the measurement. A specific quantity (i.e., a limit of the measurement system). For example, "substantially" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed to have meanings consistent with their meanings in the context of the relevant technology and the present invention, and are not to be construed as idealistic or excessive Formal meaning, unless expressly defined as such herein.

Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations in the shape of the illustrations, for example as a result of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, regions shown or described as flat may typically have rough and/or non-linear characteristics. Additionally, the acute angles shown may be rounded. Accordingly, the regions shown in the figures are schematic in nature and their shapes are not intended to show the precise shapes of the regions and are not intended to limit the scope of the claims.

1A is a partial cross-sectional schematic diagram of a biometric sensing device and a usage thereof according to the first embodiment of the present invention. 1B is a partial cross-sectional schematic diagram of a biometric sensing device according to the first embodiment of the present invention. 1C is a partial circuit connection diagram of a biometric sensing device according to the first embodiment of the present invention. FIG. 1D is a partial top view of a biometric sensing device according to the first embodiment of the present invention. FIG. 1E is a partial timing diagram of a biometric sensing device according to the first embodiment of the present invention. For example, in FIG. 1A or FIG. 1D , only partial positions or partial regions corresponding to the light sensing elements or capacitive sensing elements in the biometric sensing device are illustrated. FIG. 1B may be an enlarged view corresponding to the region R1 in FIG. 1A.

The biometric sensing device 100 includes a light sensing element 120, a first light shielding layer 131, a second light shielding layer 132, and a capacitive sensing element 160. The light sensing element 120 is disposed on the substrate surface 110a of the substrate 110. The first light-shielding layer 131 is disposed on the light sensing element 120 . The first light shielding layer 131 has a first hole 131P corresponding to the light sensing element 120 . The second light-shielding layer 132 is disposed on the first light-shielding layer 131 . The second light-shielding layer 132 includes second holes 132P corresponding to the first holes 131P. At least one of the first light-shielding layer 131 and the second light-shielding layer 132 is the first sensing electrode 161 of the capacitive sensing element 160 . That is to say, the first light-shielding layer 131 or the second light-shielding layer 132 as the first sensing electrode 161 is a conductive layer.

In this embodiment, a hole in the light-shielding layer (such as a first hole 131P in the first light-shielding layer 131 and/or a second hole 132P in the second light-shielding layer 132) may correspond to a light sensing element 120, However, the present invention is not limited to this. In an embodiment not shown, the plurality of holes in the light-shielding layer (such as the plurality of first holes 131P in the first light-shielding layer 131 and/or the plurality of second holes 132P in the second light-shielding layer 132 ) may correspond to A light sensing element similar to the light sensing element 120 .

In this embodiment, the biometric sensing device 100 may further include an insulation layer. The insulating layer may be composed of multiple stacked insulating film layers. The whole or part of the insulating layer may be called a planarization layer (PL layer), a protective layer (such as a back channel passivation layer (BP layer), but not limited to) or a buffer layer, However, the present invention is not limited to this.

In this embodiment, the first light-shielding layer 131 and the second light-shielding layer 132 may be separated from each other by an insulating layer therebetween. For example, the biometric sensing device 100 may further include a first insulation layer 141 or a second insulation layer 142, but the invention is not limited thereto. The first insulation layer 141 may cover the first light shielding layer 131 . The second light shielding layer 132 may cover the second insulation layer 142.

In one embodiment, part of the insulating layer can be filled into corresponding holes in the light-shielding layer, but the invention is not limited thereto. For example, part of the first insulation layer 141 may be filled in the first hole 131P of the first light-shielding layer 131 .

In this embodiment, the biometric sensing device 100 may further include a light guide element 150 . The light guide element 150 may correspond to a hole in the light shielding layer (eg, the second hole 132P of the second light shielding layer 132 ). The light guide element 150 may include a lens (such as a micro lens), but the present invention is not limited thereto.

In one embodiment, the light guide element 150 can be embedded in the hole of the corresponding light shielding layer, but the invention is not limited thereto.

In one embodiment, the light guide component 150 may be a pre-formed component, but the invention is not limited thereto.

In one embodiment, the light guide element 150 can be formed by imprinting. For example, a light-transmitting material can be coated on the top surface of the corresponding light-shielding layer (such as: corresponding to the light-sensing element 120, the surface of the aforementioned light-shielding layer farthest from the light-sensing element 120), and then, by The corresponding light guide element 150 is formed by imprinting the aforementioned light-transmitting material.

In this embodiment, the biometric sensing device 100 may further include a filter layer. A filter layer may be located on the light sensing element 120. The filter layer can include IR-cut material, IR filter material, red filter material, green filter material, and blue filter material. Material or other possible color filter materials.

In one embodiment, the filter layer 190 may have different materials in different areas, but the invention is not limited thereto. For example, in the filter layer 190, two of the regions 191, 192, 193 or 194 may have different materials.

In this embodiment, the filter layer 190 may be located between the first insulating layer 141 and the second insulating layer 142, but the invention is not limited thereto.

In one embodiment, the signal-to-noise ratio (SNR) of the corresponding light sensing element 120 can be improved through the filter layer 190 .

In one embodiment, the light sensing element 120 may be composed of a plurality of stacked film layers (such as corresponding electrode layers and corresponding photosensitive layers), but the invention is not limited thereto. The aforementioned photosensitive layer may include a photoelectric conversion material. For example, the photosensitive layer can absorb light to cause the light sensing element 120 to generate a corresponding electrical signal, but the invention is not limited thereto. In one embodiment, the material of the photosensitive layer may include silicon rich oxide (SRO), silicon rich nitride (SRN), silicon rich oxynitride (SRON), rich Silicon rich carbide (SRC), silicon rich oxycarbide, hydrogenated silicon rich oxide, hydrogenated silicon rich nitride, hydrogenated silicon rich nitride (hydrogenated silicon rich oxynitride) or a combination, doping or stacking of the above, but the invention is not limited thereto.

In a possible embodiment, the light sensing element 120 may include a modular light sensing element.

In an embodiment, if (that is, one of the possible aspects) the conductive first light-shielding layer 131 is the first sensing electrode 161 of the capacitive sensing element 160, then the conductive first light-shielding layer 131 is connected to the light sensing element 161. Component 120 is electrically isolated.

In one embodiment, if (that is, one of the possible aspects) the conductive second light-shielding layer 132 is the first sensing electrode 161 of the capacitive sensing element 160, then the conductive second light-shielding layer 132 is connected to the light sensing element 161. Component 120 is electrically isolated.

In an embodiment, if (that is, one of the possible aspects) the conductive first light-shielding layer 131 and the conductive second light-shielding layer 132 are the first sensing electrodes 161 of the capacitive sensing element 160, then the conductive third light-shielding layer 132 is the first sensing electrode 161 of the capacitive sensing element 160. A light-shielding layer 131 and a conductive second light-shielding layer 132 are electrically separated from the light sensing element 120 . Moreover, the first light-shielding layer 131 and the second light-shielding layer 132 constituting the first sensing electrode 161 can be formed by other conductive elements (such as conductive vias) in other areas not shown, but not limited) are electrically connected to each other.

In one embodiment, the first sensing electrode 161 of the capacitive sensing element 160 may be floating ground or physical ground, but the invention is not limited thereto.

In one embodiment, the pattern or layout of the first sensing electrode 161 can be adjusted according to design requirements, and is not limited in the present invention. For example, in the area where the first sensing electrode 161 does not correspond to or overlap with the light sensing element 120, its pattern or wiring can be adjusted according to the corresponding needs of the circuit.

In this embodiment, the capacitive sensing element 160 may further include a second sensing electrode 162 . In the thickness direction D1 of the biometric sensing device 100 (eg, a direction perpendicular to the substrate surface 110 a ), the second sensing electrode 162 is disposed corresponding to the first sensing electrode 161 . That is to say, in the thickness direction D1, the second sensing electrode 162 overlaps (including completely overlapping or partially overlapping) the first sensing electrode 161.

In one embodiment, the biometric sensing device 100 may further include a protective layer (not shown) located on the second sensing electrode 162 .

In this embodiment, in a certain area of the biometric sensing device 100 (such as: similar to the area suitable for pressing/touching by the finger F in FIG. 1A and sensing and/or identifying; but not limited to), In the thickness direction D1 of the biometric sensing device 100, the second sensing electrode 162, the first sensing electrode 161 and the light sensing element 120 may overlap each other.

In one embodiment, the material of the second sensing electrode 162 may include zinc oxide (ZnO), tin oxide (SnO), indium zinc oxide (Indium-Zinc Oxide; IZO), gallium zinc oxide (Gallium-Zinc Oxide; GZO) ), zinc-tin oxide (Zinc-Tin Oxide; ZTO) or indium-tin oxide (Indium-Tin Oxide; ITO) or a combination, doping or stacking of the above, but the invention is not limited thereto.

In one embodiment, the pattern or layout of the second sensing electrode 162 can be adjusted according to design requirements, and is not limited in the present invention.

In one embodiment, the capacitive sensing element 160 can be electrically connected to the capacitive sensing circuit 176 to perform a mutual capacitance sensing mode, a self capacitance sensing mode, or other possible sensing modes. .

For example, the aforementioned capacitive sensing circuit 176 may include a scan driving circuit (Tx driving circuit) and a sensing driving circuit (Rx driving circuit). The scanning driving circuit may be electrically connected to the corresponding second sensing electrode 162, and The sensing driving circuit may be electrically connected to the corresponding first sensing electrode 161 . In the mutual capacitance sensing mode, during the touch detection time interval, the touch scan signal can be applied to the second sensing electrode 162 through the scan driving circuit, and the corresponding first sensing electrode 161 can couple the touch scan signal. And can be read and/or sensed by the sensing driving circuit. Taking the biometric sensing device 100 as an example by pressing or touching it with a finger (as shown in FIG. 1A ), the corresponding second sensing electrode 162 can be deformed accordingly (such as causing the second sensing electrode 162 to be in contact with the second sensing electrode 162 ). (the distance between one sensing electrode 161 decreases), thereby changing the sensing capacitance between the corresponding second sensing electrode 162 and the corresponding first sensing electrode 161. The above touch sensing method of the capacitive sensing element 160 is only an illustrative example, and is not limited to the present invention.

Under natural or unintentional conditions, because the thickness or strength of fingers (such as finger F in Figure 1A, but not limited to) is often uneven; and/or the degree or position of finger pressure/touch is difficult to be consistent, so , when the capacitive sensing element 160 is pressed/touched by a finger, there will basically be obvious or detectable/judgable signal differences in different areas (such as the corresponding second sensing electrode 162; but not limited to) . In this way, the capacitive sensing element 160 can be used to identify whether it is possible to be actually pressed/touched by a finger. However, the present invention does not limit the identification method.

In an embodiment, the sensing range R6 of the capacitive sensing element 160 is greater than or substantially equal to 3 millimeters (mm) × 3 mm, and less than or substantially equal to 50 mm × 50 mm. In this way, the distance between the first sensing electrode 161 and the second sensing electrode 162 can be appropriately adjusted, and/or the capacitive sensing element 160 can have better accuracy. It is worth noting that the aforementioned expression of the sensing range R6 only represents the area of the capacitive sensing element 160 projected on the substrate surface 110a, and the present invention does not limit the shape of the sensing range R6. For example, the shape of the capacitive sensing element 160 projected onto the substrate surface 110a may be a quadrangular shape, a quadrilateral-like shape (such as a quadrilateral-like shape with at least one rounded corner), other similar polygonal shapes, polygonal-like shapes, or arc-like shapes. Possible shapes for the sides (e.g. circle or ellipse).

In one embodiment, the size or number of sensor units can be adjusted according to design requirements, and is not limited in the present invention. That is to say, the sensing range R6 may include one or more light sensing units or one or more capacitive sensing units.

In this embodiment, the biometric sensing device 100 may further include a display element 180 . The display element 180 may be disposed between the first sensing electrode 161 and the second sensing electrode 162 .

In one embodiment, the biometric sensing device 100 may be called an under display fingerprint sensor, but the invention is not limited thereto.

The display element 180 may include a liquid crystal display element, an organic light-emitting diode display element, a light-emitting diode display element or other suitable display elements, which are not limited in the present invention. In addition, in FIG. 1A , the arrangement and size of the display element 180 are only schematically illustrated and are not limited to the present invention.

For example, the light-emitting unit 188 in the display element 180 can emit corresponding light L. After part of the light is reflected by the finger F, it can be directed to the light guide element 150 (if any). Moreover, light at appropriate angles can be directed to the light sensing element 120 .

The light-emitting unit 188 is, for example, a light-emitting diode or a corresponding pixel unit, which is not limited in the present invention.

In this embodiment, at least the light sensing element 120 can be used to make the biometric sensing device 100 suitable for sensing light. In one embodiment, the biometric sensing device 100 may be adapted to sense light reflected by biometric features (such as, but not limited to, fingerprints), but the invention is not limited thereto.

In this embodiment, through the configuration of the capacitive sensing element 160 and the light sensing element 120 in the biometric sensing device 100, it can be determined whether the fingerprint pattern or signal captured by the light sensing element 120 may be Really pressed/touched by fingers. In addition, since the conductive light-shielding layer with holes can serve as the sensing electrode of the capacitive sensing element 160, the thickness of the biometric sensing device 100 can be reduced.

In this embodiment, the optical sensing element 120 and the capacitive sensing element 160 are signal-connected to the same sensing chip 170 . Sensing die 170 may include corresponding integrated circuits. For example, the sensing chip 170 may include corresponding capacitive sensing circuits 176, light sensing circuits 172, and/or timing control circuits (not shown). During the sensing period, the light sensing element 120 is adapted to receive a light sensing signal through the light sensing circuit 172 , and the capacitance sensing element 160 is adapted to receive a capacitance signal through the capacitance sensing circuit 176 .

In one embodiment, the number of channels through which the chip is connected to the capacitive sensing element 160 may be smaller than the number of channels through which the chip is connected to the optical sensing element 120, but the invention is not limited thereto.

In this embodiment, the timing of the light sensing signal and the timing of the capacitance signal at least partially overlap. Taking FIG. 1E as an example, the capacitive sensing element 160 can be enabled between time T1 and time T3, between time T4 and time T7, and between time T8 and time TN, and have corresponding capacitance signals. The light sensing element 120 can be enabled between time T2 and time T5 and between time T6 and time T9, and have corresponding capacitance signals. The timing sequence in FIG. 1E is only an exemplary representation and is not limiting to the present invention.

In one embodiment, when the capacitive sensing element 160 is used to identify whether a finger may actually be pressed/touched, the light sensing element 120 can also be used to identify the fingerprint pattern or signal; or, when using light, When the sensing element 120 performs fingerprint pattern or signal identification, the capacitive sensing element 160 can also be used to identify whether it is actually pressed/touched by a finger. In this way, the biometric sensing device 100 can be suitable for anti-counterfeiting biometric sensing and identification.

In this embodiment, the sensing period (eg, time T1 to time TN in FIG. 1E , but not limited to) is less than or substantially equal to 5 seconds. If used, the accuracy of anti-counterfeiting identification can be improved (for example, the difficulty of simulated pressing and short-term pattern switching can be improved).

In this embodiment, the length of the enabling time of the capacitive signal is greater than the length of the enabling time of the light sensing signal. In one embodiment, the sensing time and/or response time of the light sensing signal is generally shorter than the sensing time and/or response time of the capacitive signal. For example, the amount of deformation or capacitance change that causes a capacitance signal may correspond to the reaction or action time of the organism, requiring a relatively long sensing time and/or reaction time. Therefore, the accuracy of identification can be improved by making the enabling time of the capacitive signal longer than the enabling time of the light sensing signal.

In one embodiment, after the biometric sensing and identification is completed (for example, after time TN), other touch sensing signals can be enabled to perform other touch sensing functions. For example, light sensing signals and capacitive signals can be used for the fingerprint unlocking function of the under-screen fingerprint sensor, and other touch sensing signals after the fingerprint unlocking is completed can be used for other applications.

It is worth noting that FIG. 1E is only an exemplary illustration, and the present invention does not limit the number of times the light sensing signal and/or the capacitance signal is enabled.

FIG. 2 is a partial top view of a biometric sensing device according to the second embodiment of the present invention. The biometric sensing device 200 of the second embodiment is similar to the biometric sensing device 100 of the first embodiment. Similar components are denoted by the same reference numerals and have similar functions, materials or formation methods, and descriptions thereof are omitted.

The biometric sensing device 200 may include a light sensing element 120, a first light shielding layer 131, a second light shielding layer 132, a capacitive sensing element (not directly shown, which may be similar to the capacitive sensing element 160 of the previous embodiment), and Light guide element 250.

In this embodiment, in a sensing unit, a light guide element 250 may correspond to a hole in a light-shielding layer (such as: a first hole 131P in the first light-shielding layer 131 and a first hole in the second light-shielding layer 132 Two holes 132P).

FIG. 3 is a partial top view of a biometric sensing device according to the third embodiment of the present invention. The biometric sensing device 300 of the third embodiment is similar to the biometric sensing device 100 of the first embodiment. Similar components are represented by the same reference numerals and have similar functions, materials or formation methods, and descriptions are omitted.

The biometric sensing device 300 may include a light sensing element 120, a first light shielding layer 131, a second light shielding layer 132, a capacitive sensing element (not directly shown, which may be similar to the capacitive sensing element 160 of the previous embodiment), and Light guide element 350.

In this embodiment, in a sensing unit, one light guide element 350 can correspond to a plurality of holes in a light-shielding layer (such as a plurality of first holes 131P in the first light-shielding layer 131 and the plurality of first holes 131P in the second light-shielding layer 132 Multiple second holes 132P).

FIG. 4 is a partial top view of a biometric sensing device according to the fourth embodiment of the present invention. The biometric sensing device 400 of the fourth embodiment is similar to the biometric sensing device 100 of the first embodiment. Similar components are denoted by the same reference numerals and have similar functions, materials or formation methods, and descriptions thereof are omitted.

The biometric sensing device 100 may include a light sensing element 120, a first light shielding layer 131, a second light shielding layer 132, a capacitive sensing element (not directly shown, which may be similar to the capacitive sensing element 160 of the previous embodiment), and Light guide element 450.

In this embodiment, a plurality of light guide elements 450 may be included in one sensing unit. In a sensing unit, each light guide element 450 may correspond to a plurality of holes in a light-shielding layer (such as a plurality of first holes 131P in the first light-shielding layer 131 and a plurality of second holes 132P in the second light-shielding layer 132 ).

In addition, for clarity of illustration, not all the light guide elements 450, the first holes 131P and the second holes 132P are marked one by one in FIG. 4 .

FIG. 5 is a partial top view of a biometric sensing device according to the fifth embodiment of the present invention. The biometric sensing device 500 of the fifth embodiment is similar to the biometric sensing device 400 of the fourth embodiment. Similar components are denoted by the same reference numerals and have similar functions, materials or formation methods, and descriptions thereof are omitted.

The biometric sensing device 500 may include a light sensing element 120, a first light shielding layer 131, a second light shielding layer 132, a capacitive sensing element (not directly shown, which may be similar to the capacitive sensing element 160 of the previous embodiment), The light guide element 450 and the dummy light guide element 550. In this embodiment, the appearance, shape and/or size of the dummy light guide element 550 may be the same as or similar to the light guide element 450 . However, the light is basically unable to emit to the sensing element through the dummy light guide element 550 .

In one embodiment, the dummy light guide element 550 may be made of the same or similar material as the light guide element 450 . The difference is that: in the thickness direction D1, the light sensing element 120 does not overlap the dummy light guide element 550; and/or, at least one light shielding layer between the light sensing element 120 and the dummy light guide element 550 does not have correspondence or overlap. holes in the dummy light guide element 550 .

In one embodiment, the material of the dummy light guide element 550 may be different from that of the light guide element 450 . For example, the dummy light guide element 550 may be opaque.

In addition, for clarity of illustration, not all the light guide elements 450, the first holes 131P, the second holes 132P and the dummy light guide elements 550 are marked one by one in FIG. 5 .

In the aforementioned embodiments, a film layer may have a single-layer structure or a multi-layer structure. If a film layer is a stack of multi-layer structures, the aforementioned multi-layer structures may not have materials with other properties between them. For example, the conductive layer may be a single layer or a multi-layer structure. If it is a conductive layer with a multi-layer structure, there may be no insulating material between the aforementioned multi-layer structures. For another example, the insulating layer may be a single layer or a multi-layer structure. If it is an insulating layer with a multi-layer structure, there may be no conductive material between the multi-layer structures. For another example, the light-shielding layer can be a single-layer or multi-layer structure. If it is a light-shielding layer with a multi-layer structure, there may be no light-transmitting material between the aforementioned multi-layer structures.

To sum up, the present invention can make the thickness of the biometric sensing device thinner by using at least one of the first light-shielding layer and the second light-shielding layer as the first sensing electrode of the capacitive sensing element. In addition, through the integration of light sensing elements and capacitive sensing elements, the biometric sensing device can have better identification performance (such as improving the anti-counterfeiting identification capability of the optical under-screen fingerprint module, but not limited to).

100, 200, 300, 400, 500: Biometric sensing device 110:Substrate 110a: Surface 120:Light sensing element 131: First light shielding layer 131P:The first hole 132:Second light shielding layer 132P:Second hole 141: First insulation layer 142: Second insulation layer 150, 250, 350, 450: light guide element 550: Dummy light guide element 160: Capacitive sensing element 161: First sensing electrode 162: Second sensing electrode 170: Sensing chip 176: Capacitive sensing circuit 180:Display component 188:Light-emitting unit 190:Filter layer 191, 192, 193, 194: Area D1:Thickness direction F:finger L:Light R1:Region R6: Sensing range T1, T2, T3, T4, T5, T6, T7, T8, T9, TN: time

1A is a partial cross-sectional schematic diagram of a biometric sensing device and a usage thereof according to the first embodiment of the present invention. 1B is a partial cross-sectional schematic diagram of a biometric sensing device according to the first embodiment of the present invention. 1C is a partial circuit connection diagram of a biometric sensing device according to the first embodiment of the present invention. FIG. 1D is a partial top view of a biometric sensing device according to the first embodiment of the present invention. FIG. 1E is a partial timing diagram of a biometric sensing device according to the first embodiment of the present invention. FIG. 2 is a partial top view of a biometric sensing device according to the second embodiment of the present invention. FIG. 3 is a partial top view of a biometric sensing device according to the third embodiment of the present invention. FIG. 4 is a partial top view of a biometric sensing device according to the fourth embodiment of the present invention. FIG. 5 is a partial top view of a biometric sensing device according to the fifth embodiment of the present invention.

100:Biometric sensing device

110:Substrate

110a: Surface

160: Capacitive sensing element

161: First sensing electrode

162: Second sensing electrode

180:Display components

188:Light-emitting unit

D1:Thickness direction

F:finger

L:Light

R1:Region

Claims (10)

A biometric sensing device, including: a light sensing element disposed on a substrate; a first light shielding layer disposed on the light sensing element, the first light shielding layer having a light sensing element corresponding to the light sensing element a first hole; a second light-shielding layer disposed on the first light-shielding layer, the second light-shielding layer having a second hole corresponding to the first hole; a capacitive sensing element, wherein the first light-shielding layer and at least one of the second light-shielding layers is the first sensing electrode of the capacitive sensing element, and the capacitive sensing element is further included in the thickness direction of the biometric sensing device, corresponding to a second sensing electrode provided on the first sensing electrode; and a display element disposed between the first sensing electrode and the second sensing electrode. A biometric sensing device, including: a light sensing element disposed on a substrate; a first light shielding layer disposed on the light sensing element, the first light shielding layer having a light sensing element corresponding to the light sensing element a first hole; a second light-shielding layer disposed on the first light-shielding layer, the second light-shielding layer having a second hole corresponding to the first hole; and a capacitive sensing element, wherein the first light-shielding layer At least one of the second light-shielding layer and the second light-shielding layer is the first sensing electrode of the capacitive sensing element, wherein during the sensing period, the light sensing element is input with a light sensing signal, and the capacitive sensing element The sensing element is A capacitive signal is input, and the enable time length of the capacitor signal is greater than the enable time length of the light sensing signal. The biometric sensing device according to claim 1 or 2, further comprising: a lens provided corresponding to the first hole or the second hole. The biometric sensing device according to claim 1 or 2, wherein the first light-shielding layer is electrically separated from the light-sensing element, and/or the second light-shielding layer is electrically separated from the light-sensing element. Sexual separation. The biometric sensing device according to claim 1 or 2, wherein the first light-shielding layer and the second light-shielding layer are the first sensing electrodes of the capacitive sensing element. The biometric sensing device according to claim 2, wherein the capacitive sensing element further includes a second sensing element disposed corresponding to the first sensing electrode in the thickness direction of the biometric sensing device. electrode. The biometric sensing device according to claim 1 or 6, wherein the sensing range of the capacitive sensing element is greater than or equal to 3mm×3mm and less than or equal to 50mm×50mm. The biometric sensing device according to claim 1 or 2, wherein the light sensing element and the capacitive sensing element are signal-connected to the same sensing chip. The biometric sensing device according to claim 1 or 2, wherein during the sensing period, the light sensing element is input with a light sensing signal, the capacitance sensing element is fed with a capacitance signal, and the light sensing element is input with a capacitance signal. The timing of the signal overlaps at least partially with the timing of the capacitive signal. The biometric sensing device according to claim 1 or 2, wherein during the sensing period, the light sensing element is input with a light sensing signal, the capacitance sensing element is input with a capacitance signal, and the sensing element is The period is less than or equal to 5 seconds.

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