TWI811802B - Ridge/Buried Hybrid DFB Semiconductor Laser Epitaxial Manufacturing Method and DFB Semiconductor Laser Structure Made Using It - Google Patents
Ridge/Buried Hybrid DFB Semiconductor Laser Epitaxial Manufacturing Method and DFB Semiconductor Laser Structure Made Using It Download PDFInfo
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Abstract
本發明係一種脊狀/掩埋混合式DFB半導體雷射之磊晶製造方法,係於一基板上依序磊晶生成一N型材料區、一主動區及一P型材料區而形成一雙異質結構,且該P型材料區中由下至上依序具有一蝕刻停止層及一P型上隔離層。鄰接設置一(光柵)穿隧接面(TJ)層於該P型上隔離層上,並蝕刻該TJ層及該P型上隔離層並止於該蝕刻停止層而形成一脊柱,使該主動區未受蝕刻而未縮小發光範圍後,再一次性依序成長形成一N型披覆層及一N型接觸層,且該N型披覆層掩埋包覆該脊柱,藉此形成兼具脊狀/掩埋製程特性之DFB半導體雷射結構而提升製程良率及可靠度。 The invention is a ridge/buried hybrid DFB semiconductor laser epitaxial manufacturing method. It sequentially epitaxially generates an N-type material area, an active area and a P-type material area on a substrate to form a pair of heterogeneous materials. structure, and the P-type material region has an etching stop layer and a P-type upper isolation layer in order from bottom to top. A (grating) tunnel junction (TJ) layer is disposed adjacent to the P-type upper isolation layer, and the TJ layer and the P-type upper isolation layer are etched and end at the etching stop layer to form a spine, so that the active After the area is not etched and the light-emitting range is not reduced, an N-type cladding layer and an N-type contact layer are grown sequentially at once, and the N-type cladding layer buries and covers the spine, thereby forming a ridge-like structure. The DFB semiconductor laser structure with shape/buried process characteristics improves process yield and reliability.
Description
本發明係與DFB(Distributed Feedback Laser Diode,分散式反饋)半導體雷射有關,尤其是一種脊狀/掩埋混合式DFB半導體雷射之磊晶製造方法及利用其所製成之DFB半導體雷射結構。 The present invention is related to DFB (Distributed Feedback Laser Diode, Distributed Feedback) semiconductor laser, especially a ridge/buried hybrid DFB semiconductor laser epitaxial manufacturing method and the DFB semiconductor laser structure made by the same. .
光通訊係為採用光源,諸如發光二極體(Light Emitting Diode,LED)或半導體雷射(Laser Diode,LD)作為信號媒介傳播的電子通訊技術,且一般常用的LD為FP(Fabry Perot)、DFB及垂直共振腔面射型(VCSEL)等三類。而,邊射型雷射之FP LD及DFB LD多採用RWG(Ridge Waveguide,脊型波導式)及BH(Buried Heterojunction,掩埋異質式)兩種製程方式並分別對應生成結構,以FP LD為例,其磊晶結構由下而上大致包含:一基板(Substrate)、一N型披覆層(n-Cladding)、一主動層(Active)、一P型披覆層(p-Cladding)及一P型接觸層(Contact),而DFB LD與FP LD間的結構差異主要在於:DFB LD係於FP LD的基礎上設置一布拉格光柵(Bragg Grating),以供濾光形成單一縱模出光之用,因此,因應各式光纖通訊中對光頻或光模態的不同需求,該布拉格光柵即相應需求而選擇設置於該N型披覆層或該P型披覆層之範圍內。 Optical communication is an electronic communication technology that uses light sources, such as light emitting diodes (LED) or semiconductor lasers (Laser Diode, LD), as signal media. The commonly used LDs are FP (Fabry Perot), There are three types: DFB and vertical cavity surface emitting type (VCSEL). However, edge-emitting laser FP LD and DFB LD mostly use two process methods: RWG (Ridge Waveguide, ridge waveguide) and BH (Buried Heterojunction, buried heterojunction), and generate corresponding structures respectively. Take FP LD as an example , its epitaxial structure roughly includes from bottom to top: a substrate (Substrate), an N-type cladding layer (n-Cladding), an active layer (Active), a P-type cladding layer (p-Cladding) and a P-type contact layer (Contact), and the structural difference between DFB LD and FP LD mainly lies in: DFB LD is equipped with a Bragg grating (Bragg Grating) on the basis of FP LD for filtering light to form a single longitudinal mode for light emission. , therefore, in response to different requirements for optical frequencies or optical modes in various optical fiber communications, the Bragg grating is selected to be disposed within the range of the N-type cladding layer or the P-type cladding layer according to the requirements.
其中,於RWG結構中,該P型披覆層中係埋設有一蝕刻停止層(Etching Stop)而區分為上下兩部份,且透過蝕刻方式將一部份之該P型接觸層及上部份之該P型披覆層去除並止於該蝕刻停止層,以形成脊柱(Ridge)構造; 於BH結構中,將一部份之該P型披覆層及該主動層去除後,一次再成長p/n InP及二次再成長p InP,以完整該P型披覆層及形成該P型接觸層。由此可知,RWG LD結構之明顯特性係保持主動層之完整性,且具有前期磊晶製程相對簡單與穩定性好等優點,雖然有後期蝕刻Ridge工藝稍複雜及光斑呈橢圓形而較不利於光纖耦合等問題;BH LD結構則係將主動層部分蝕刻去除,並利用該P型披覆層疊置包覆該主動層而侷限發光區域,以實現較低臨界電流(Ith)、較低串聯電阻、較高發光效率及光斑近似圓形等優點,卻也因該P型披覆層及該主動層除該脊柱部份外皆被去除而涉及有選擇性區域磊晶成長需求,造成製程複雜,且受p-n-p-n型電流限制作用影響而有穩定性較差等問題。 Among them, in the RWG structure, an etching stop layer (Etching Stop) is embedded in the P-type cladding layer and divided into upper and lower parts, and a part of the P-type contact layer and the upper part are etched The P-type cladding layer is removed and ends at the etching stop layer to form a ridge structure; in the BH structure, part of the P-type cladding layer and the active layer are removed and then grown again p/n InP and secondary growth of p InP to complete the P-type cladding layer and form the P-type contact layer. It can be seen that the obvious characteristics of the RWG LD structure are to maintain the integrity of the active layer, and it has the advantages of relatively simple and stable early epitaxy process, although the later etching Ridge process is slightly complicated and the spot is oval, which is not conducive to Problems such as fiber coupling; the BH LD structure is to remove part of the active layer by etching, and use the P-type cladding layer to overlap and cover the active layer to limit the light-emitting area, so as to achieve lower critical current (I th ) and lower series connection It has the advantages of high resistance, high luminous efficiency, and a nearly circular light spot, but it also involves the need for selective area epitaxy growth because the P-type cladding layer and the active layer are removed except for the spine part, making the process complicated. , and suffers from problems such as poor stability due to the pnpn type current limiting effect.
有感於此,本案發明人基於參酌主動層範圍影響量子效率與調變速度性能、及P型披覆層比N型披覆層具有較高阻值等因素下,係思索如何利用上述兩結構之特性進行截長補短而提供一種結合兩結構優點之混合式結構,以完善傳統DFB結構而提升製程良率並降低製程成本,即為本發明所欲探究之課題。 In view of this, the inventor of this case considered how to use the above two structures based on factors such as the range of the active layer affecting quantum efficiency and modulation speed performance, and the fact that the P-type cladding layer has a higher resistance than the N-type cladding layer. The subject of the present invention is to provide a hybrid structure that combines the advantages of the two structures by truncating the advantages of the two structures to improve the process yield and reduce the process cost by improving the traditional DFB structure.
有鑑於上述問題,本發明之目的旨在提供一種脊狀/掩埋混合式DFB半導體雷射之磊晶製造方法及利用其所製成之DFB半導體雷射結構,以利用具n-p接面之穿隧接面(Tunnel Junction,TJ)結構形成類RWG結構脊柱而不蝕刻主動區,以優化傳統RWG結構形成類似BH結構,使兼具RWG及BH結構特性而有效改善半導體散熱效率及均勻主動區使用率之效益。 In view of the above problems, the purpose of the present invention is to provide an epitaxial manufacturing method of a ridge/buried hybrid DFB semiconductor laser and a DFB semiconductor laser structure made by the same, so as to utilize tunneling with n-p junctions. The Tunnel Junction (TJ) structure forms a RWG-like structural spine without etching the active area to optimize the traditional RWG structure to form a BH-like structure, which combines the characteristics of RWG and BH structures and effectively improves semiconductor heat dissipation efficiency and uniform active area utilization. benefits.
為達上述目的,本發明係揭露一種脊狀/掩埋混合式DFB半導體雷射結構,係於一基板上依序磊晶生成有一N型材料區、一主動區及一P型材料區,其特徵在於:該N型材料區由下而上依序包含一緩衝層、一光柵層、一N型隔離層、一第一載子漸變躍遷層及一下侷限層,且該緩衝層鄰接該基板,該下侷限層鄰接該主動區;該主動區由下而上依序包含一下漸變層、一下能障層、一主動層、一上能障層及一上漸變層,且該下漸變層鄰接該下侷限層,該上漸變層鄰接該P型材料區;該P型材料區由下而上依序包含一上侷限層、一P型下隔離層、一蝕刻停止層及一P型上隔離層,該P型上隔離層上鄰接設有包含一重摻雜P型層及一重摻雜N型層之一穿隧接面層,該P型上隔離層與該穿隧接面層上包覆設有一N型披覆層,該N型披覆層上設有一N型接觸層,該N型接觸層上設有一N型金屬電極層,且該上侷限層鄰接該上漸變層,該重摻雜P型層鄰接該P型上隔離層,該重摻雜N型層鄰接於該重摻雜P型層上,該N型披覆層與該N型接觸層之間由下而上更設置有一第二載子漸變躍遷層及一第三載子漸變躍遷層;其中,該DFB半導體雷射結構於磊晶生成時,係設置該光柵層於該N型材料區中而使該光柵層與該主動區間形成該N型隔離層,且設置該蝕刻停止層於該P型材料區中而使該蝕刻停止層之下、上分別形成鄰接之該P型下隔離層與該P型上隔離層;形成該穿隧接面層鄰接於該P型上隔離層上後,塗佈一條狀光阻於該穿隧接面層上,且非等向性向下蝕刻未覆蓋於該條狀光阻之該穿隧接面層及該P型上隔離層並止於該蝕刻停止層而形成一脊柱,且該脊柱之該穿隧接面層與該P型上隔離層範圍一致後,去除該條狀光阻,再一次性再成長依序形成該N型披覆層及該N型接觸層後,設置該N型金屬電極層於該N型接觸層上;其中,由該基板向上磊晶形成之該主動區係未受蝕刻縮小發光範圍,而使該主動區範圍大於該脊柱範 圍,且該脊柱由下而上依序為該P型上隔離層、該重摻雜P型層及該重摻雜N型層;其中,該基板係採用InP材料;該緩衝層及該N型隔離層係採用n-InP材料、該光柵層採用n-In0.71Ga0.29As0.62P0.38材料、該第一載子漸變躍遷層採用n-(Al0.85Ga0.15)0.47In0.53As材料及該下侷限層採用n-In0.53Al0.47As材料;該下漸變層及該上漸變層係採用(Al0.85Ga0.15)0.47In0.53As<->(Al0.44Ga0.56)0.47In0.53As材料、該下能障層及該上能障層採用(Al0.23Ga0.77)0.52In0.48As材料及該主動層採用(Al0.22Ga0.78)0.37In0.63As材料;該上侷限層係採用p-In0.53Al0.47As材料、該P型下隔離層及該P型上隔離層採用p-InP材料、該蝕刻停止層係採用p-In0.84Ga0.16As0.34P0.66材料;該穿隧接面層係採用InGaAsP、AlGaInAs、InGaAs、AlInAs或InP材料;該N型披覆層採用n-InP材料;該第二載子漸變躍遷層係採用n-In0.71Ga0.29As0.62P0.38材料;該第三載子漸變躍遷層係採用n-In0.61Ga0.39As0.84P0.16材料;及該N型接觸層係採用n-In0.53Ga0.47As材料。 In order to achieve the above object, the present invention discloses a ridge/buried hybrid DFB semiconductor laser structure, which is epitaxially generated sequentially on a substrate with an N-type material region, an active region and a P-type material region. Its characteristics The N-type material region includes a buffer layer, a grating layer, an N-type isolation layer, a first carrier gradient transition layer and a lower confinement layer in order from bottom to top, and the buffer layer is adjacent to the substrate, and the The lower limiting layer is adjacent to the active area; the active area includes a lower gradient layer, a lower energy barrier layer, an active layer, an upper energy barrier layer and an upper gradient layer from bottom to top, and the lower gradient layer is adjacent to the lower Localization layer, the upper gradient layer is adjacent to the P-type material area; the P-type material area includes an upper localization layer, a P-type lower isolation layer, an etching stop layer and a P-type upper isolation layer from bottom to top, The P-type upper isolation layer is adjacent to a tunnel junction layer including a heavily doped P-type layer and a heavily doped N-type layer. The P-type upper isolation layer and the tunnel junction layer are covered with a tunnel junction layer. N-type cladding layer, an N-type contact layer is provided on the N-type cladding layer, an N-type metal electrode layer is provided on the N-type contact layer, and the upper limiting layer is adjacent to the upper gradient layer, and the heavily doped P The P-type layer is adjacent to the P-type upper isolation layer, the heavily doped N-type layer is adjacent to the heavily doped P-type layer, and a first layer is disposed between the N-type cladding layer and the N-type contact layer from bottom to top. A two-carrier gradient transition layer and a third carrier gradient transition layer; wherein, when the DFB semiconductor laser structure is epitaxially generated, the grating layer is disposed in the N-type material region so that the grating layer and the active Form the N-type isolation layer in intervals, and dispose the etching stop layer in the P-type material area so that the adjacent P-type lower isolation layer and the P-type upper isolation layer are respectively formed below and above the etching stop layer; forming After the tunnel junction layer is adjacent to the P-type upper isolation layer, a strip of photoresist is coated on the tunnel junction layer, and the through hole that is not covered by the strip of photoresist is anisotropically etched downwards. The tunnel junction layer and the P-type upper isolation layer end at the etching stop layer to form a spine, and after the tunnel junction layer of the spine is consistent with the range of the P-type upper isolation layer, the strip-shaped photoresist is removed , after the N-type cladding layer and the N-type contact layer are sequentially formed by one-time growth, the N-type metal electrode layer is disposed on the N-type contact layer; wherein, the active layer is epitaxially formed upward from the substrate. The area is not etched to reduce the light-emitting range, so that the active area range is larger than the spine range, and the spine is the P-type upper isolation layer, the heavily doped P-type layer and the heavily doped N layer from bottom to top. type layer; wherein, the substrate is made of InP material; the buffer layer and the N-type isolation layer are made of n-InP material, the grating layer is made of n-In 0.71 Ga 0.29 As 0.62 P 0.38 material, and the first carrier gradient The transition layer is made of n-(Al 0.85 Ga 0.15 ) 0.47 In 0.53 As material and the lower limiting layer is made of n-In 0.53 Al 0.47 As material; the lower gradient layer and the upper gradient layer are made of (Al 0.85 Ga 0.15 ) 0.47 In 0.53 As<->(Al 0.44 Ga 0.56 ) 0.47 In 0.53 As material, the lower energy barrier layer and the upper energy barrier layer adopt (Al 0.23 Ga 0.77 ) 0.52 In 0.48 As material and the active layer adopt (Al 0.22 Ga 0.78 ) 0.37 In 0.63 As material; the upper confinement layer is made of p-In 0.53 Al 0.47 As material, the P-type lower isolation layer and the P-type upper isolation layer are made of p-InP material, and the etching stop layer is made of p-In 0.84 Ga 0.16 As 0.34 P 0.66 material; the tunnel junction layer is made of InGaAsP, AlGaInAs, InGaAs, AlInAs or InP material; the N-type cladding layer is made of n-InP material; the second carrier gradient transition layer is made of n-In 0.71 Ga 0.29 As 0.62 P 0.38 material; the third carrier gradient transition layer system uses n-In 0.61 Ga 0.39 As 0.84 P 0.16 material; and the N-type contact layer system uses n-In 0.53 Ga 0.47 As material .
另外,本發明之次一目的係揭示一種脊狀/掩埋混合式DFB半導體雷射之磊晶製造方法,係於一基板上依序磊晶生成一N型材料區、一主動區及一P型材料區而形成一雙異質結構,其特徵在於:磊晶生成該雙異質結構時,設置一蝕刻停止層於該P型材料區中而使該蝕刻停止層之下、上分別形成鄰接之一P型下隔離層與一P型上隔離層;形成具一光柵結構之一光柵穿隧接面層鄰接於該P型上隔離層上後,塗佈一條狀光阻於該光柵穿隧接面層上;其中該光柵穿隧接面層係包含一重摻雜光柵P型層及一重摻雜光柵N型層,且該重摻雜光柵P型層鄰接該P型上隔離層,該重摻雜光柵N型層鄰接於該重摻雜光柵P型層上;向下蝕刻未覆蓋於該條狀光阻之該光柵穿隧接面層及該P型上隔離層並止於該蝕刻停止層而形成一脊柱後,去除該條狀光阻;其中該主動區未受蝕刻而未縮小發光範 圍;及一次性再成長依序形成一N型披覆層及一N型接觸層後,設置一N型金屬電極層於該N型接觸層上;其中該N型披覆層掩埋包覆該脊柱,該N型接觸層設於該N型披覆層上。 In addition, a second purpose of the present invention is to disclose a method for manufacturing epitaxial ridge/buried hybrid DFB semiconductor lasers, which sequentially epitaxially generates an N-type material region, an active region and a P-type on a substrate. material area to form a double heterostructure, which is characterized in that when the double heterostructure is generated by epitaxy, an etching stop layer is set in the P-type material area so that adjacent P-type materials are formed below and above the etching stop layer. Type lower isolation layer and a P-type upper isolation layer; after forming a grating tunnel junction layer with a grating structure adjacent to the P-type upper isolation layer, a strip of photoresist is coated on the grating tunnel junction layer on; wherein the grating tunnel junction layer includes a heavily doped grating P-type layer and a heavily doped grating N-type layer, and the heavily doped grating P-type layer is adjacent to the P-type upper isolation layer, and the heavily doped grating The N-type layer is adjacent to the P-type layer of the heavily doped grating; it is formed by etching downward the grating tunnel junction layer and the P-type upper isolation layer that are not covered by the strip-shaped photoresist and ending at the etching stop layer. After one spine, the strip-shaped photoresist is removed; the active area is not etched and the luminous range is not reduced. and after sequentially forming an N-type cladding layer and an N-type contact layer at one time, an N-type metal electrode layer is disposed on the N-type contact layer; wherein the N-type cladding layer buries and covers the spine, the N-type contact layer is provided on the N-type covering layer.
並且,蝕刻為非等向性蝕刻而使該脊柱之該光柵穿隧接面層與該P型上隔離層範圍一致。如此,利用上述之磊晶製造方法所製成之DFB半導體雷射結構,係為將光柵設置於該P型材料區上之半導體結構,其特徵在於:該DFB半導體雷射結構中,由該基板向上磊晶形成之該主動區係未受蝕刻縮小發光範圍,而使該主動區範圍大於該脊柱範圍,且該脊柱由下而上依序為該P型上隔離層、該重摻雜光柵P型層及該重摻雜光柵N型層。 Moreover, the etching is anisotropic etching to make the grating tunnel junction layer of the spine consistent with the range of the P-type upper isolation layer. In this way, the DFB semiconductor laser structure made by the above-mentioned epitaxial manufacturing method is a semiconductor structure in which a grating is disposed on the P-type material region. The characteristic is that in the DFB semiconductor laser structure, the substrate is The active area formed by upward epitaxy has not been etched to reduce the luminous range, so that the active area range is larger than the spine range, and the spine is the P-type upper isolation layer and the heavily doped grating P from bottom to top. type layer and the heavily doped grating N-type layer.
其中,該N型材料區由下而上依序包含一緩衝層、一第一載子漸變躍遷層及一下侷限層,且該緩衝層鄰接該基板,該下侷限層鄰接該主動區;該主動區由下而上依序包含一下漸變層、一下能障層、一主動層、一上能障層及一上漸變層,且該下漸變層鄰接該下侷限層,該上漸變層鄰接該P型材料區;該P型材料區由下而上依序包含一上侷限層、該P型下隔離層、該蝕刻停止層及該P型上隔離層,且該上侷限層鄰接該上漸變層;及該N型披覆層與該N型接觸層之間由下而上更設置有一第二載子漸變躍遷層及一第三載子漸變躍遷層。該基板係採用InP材料;該緩衝層係採用n-InP材料、該第一載子漸變躍遷層採用n-(Al0.85Ga0.15)0.47In0.53As材料及該下侷限層採用n-In0.53Al0.47As材料;該下漸變層及該上漸變層係採用(Al0.85Ga0.15)0.47In0.53As<->(Al0.44Ga0.56)0.47In0.53As材料、該下能障層及該上能障層採用(Al0.23Ga0.77)0.52In0.48As材料及該主動層採用(Al0.22Ga0.78)0.37In0.63As材料;該上侷限層係採用p-In0.53Al0.47As材料、該P型下隔離層及該P型上隔離層採用p-InP材料、該蝕刻停止層係採用p-In0.84Ga0.16As0.34P0.66 材料;該光柵穿隧接面層係採用InGaAsP、AlGaInAs、InGaAs、AlInAs或InP材料;該N型披覆層採用n-InP材料;該第二載子漸變躍遷層係採用n-In0.71Ga0.29As0.62P0.38材料;該第三載子漸變躍遷層係採用n-In0.61Ga0.39As0.84P0.16材料;及該N型接觸層係採用n-In0.53Ga0.47As材料。該重摻雜光柵P型層係採用p-In0.71Ga0.29As0.62P0.38材料,且該重摻雜光柵N型層採用n-In0.71Ga0.29As0.62P0.38材料。 Wherein, the N-type material region includes a buffer layer, a first carrier gradient transition layer and a lower confinement layer in order from bottom to top, and the buffer layer is adjacent to the substrate, and the lower confinement layer is adjacent to the active region; the active region The area includes a lower gradient layer, a lower energy barrier layer, an active layer, an upper energy barrier layer and an upper gradient layer in order from bottom to top, and the lower gradient layer is adjacent to the lower limiting layer, and the upper gradient layer is adjacent to the P The P-type material region; the P-type material region includes an upper limiting layer, the P-type lower isolation layer, the etching stop layer and the P-type upper isolation layer in order from bottom to top, and the upper limiting layer is adjacent to the upper gradient layer ; And a second carrier gradient transition layer and a third carrier gradient transition layer are provided from bottom to top between the N-type cladding layer and the N-type contact layer. The substrate is made of InP material; the buffer layer is made of n-InP material, the first carrier gradient transition layer is made of n-(Al 0.85 Ga 0.15 ) 0.47 In 0.53 As material and the lower limiting layer is made of n-In 0.53 Al 0.47 As material; the lower gradient layer and the upper gradient layer adopt (Al 0.85 Ga 0.15 ) 0.47 In 0.53 As<->(Al 0.44 Ga 0.56 ) 0.47 In 0.53 As material, the lower energy barrier layer and the upper energy barrier The layer uses (Al 0.23 Ga 0.77 ) 0.52 In 0.48 As material and the active layer uses (Al 0.22 Ga 0.78 ) 0.37 In 0.63 As material; the upper confinement layer uses p-In 0.53 Al 0.47 As material, and the P-type lower isolation layer uses (Al 0.23 Ga 0.77 ) 0.52 In 0.48 As material. The layer and the P-type upper isolation layer are made of p-InP material, the etching stop layer is made of p-In 0.84 Ga 0.16 As 0.34 P 0.66 material; the grating tunnel junction layer is made of InGaAsP, AlGaInAs, InGaAs, AlInAs or InP Material; the N-type cladding layer uses n-InP material; the second carrier gradient transition layer uses n-In 0.71 Ga 0.29 As 0.62 P 0.38 material; the third carrier gradient transition layer uses n-In 0.61 Ga 0.39 As 0.84 P 0.16 material; and the N-type contact layer adopts n-In 0.53 Ga 0.47 As material. The P-type layer of the heavily doped grating is made of p-In 0.71 Ga 0.29 As 0.62 P 0.38 material, and the N-type layer of the heavily doped grating is made of n-In 0.71 Ga 0.29 As 0.62 P 0.38 material.
綜上所述,本發明係因應不同光型態需求而提供有兩不同光柵成形之製程,以允許元件因需求的不同而選擇將光柵設置於P型或N型半導體材料範圍。該二等磊晶製造方法蝕刻具有n-p接面之該(光柵)穿隧接面層及該P型上隔離層形成該脊柱時,係未縮減該主動區範圍並大幅降低該P型材料區之縮減範圍,以藉此完善該主動層的內部量子效率並實現提高整體良率及可靠度之目的。並且,透過該(光柵)穿隧接面層之該重摻雜(光柵)N-P型層的設置,更簡化傳統BH結構的二次再成長工序而僅需一次再成長即可,使有效簡化磊晶工序繁複度而提升整體製程效能。一次再成長時,以n InP/InGaAs取代傳統BH結構所使用的p InP/InGaAs,係將傳統BH結構中P型披覆層及P型接觸層轉置為N型披覆層及N型接觸層,以透過N型材料低阻值及高散熱效率的特性,使DFB LD實現高載子傳輸效率、低Ith、低串聯電阻、高發光效率、光斑近似圓形及高散熱效率等成效,並進一步實現提高DFB半導體雷射的製程良率及可靠度之功效。 To sum up, the present invention provides two different grating forming processes in response to different light type requirements, allowing the device to choose to set the grating in the P-type or N-type semiconductor material range according to different needs. When the second-class epitaxial manufacturing method etches the (grating) tunnel junction layer with np junction and the P-type upper isolation layer to form the spine, it does not reduce the scope of the active area and significantly reduces the area of the P-type material area. The scope is reduced to improve the internal quantum efficiency of the active layer and improve overall yield and reliability. Moreover, through the arrangement of the heavily doped (grating) NP-type layer of the (grating) tunnel junction layer, the secondary re-growth process of the traditional BH structure is further simplified and only one re-growth is required, effectively simplifying the It reduces the complexity of the crystal process and improves the overall process efficiency. During the first re-growth, p InP/InGaAs used in the traditional BH structure is replaced by n InP/InGaAs, which transposes the P-type cladding layer and P-type contact layer in the traditional BH structure into an N-type cladding layer and N-type contact. layer, through the low resistance and high heat dissipation efficiency characteristics of N-type materials, DFB LD can achieve high carrier transmission efficiency, low I th , low series resistance, high luminous efficiency, approximately circular light spot and high heat dissipation efficiency. And further achieve the effect of improving the process yield and reliability of DFB semiconductor laser.
1:DFB半導體雷射結構 1:DFB semiconductor laser structure
10:基板 10:Substrate
11:N型材料區 11:N type material area
110:緩衝層 110: Buffer layer
111:光柵層 111:Grating layer
112:N型隔離層 112:N type isolation layer
113:第一載子漸變躍遷層 113: First carrier gradient transition layer
114:下侷限層 114:Lower limit layer
12:主動區 12:Active zone
120:下漸變層 120: Lower gradient layer
121:下能障層 121: Lower energy barrier layer
122:主動層 122:Active layer
123:上能障層 123: Upper energy barrier layer
124:上漸變層 124: Upper gradient layer
13:P型材料區 13:P type material area
130:上侷限層 130: Upper limit layer
131:P型下隔離層 131:P type lower isolation layer
132:蝕刻停止層 132: Etch stop layer
133:P型上隔離層 133:P type upper isolation layer
140:穿隧接面層 140: Tunnel junction layer
1400:重摻雜P型層 1400:Heavily doped P-type layer
1401:重摻雜N型層 1401:Heavily doped N-type layer
141:光柵穿隧接面層 141:Grating tunnel junction layer
1410:重摻雜光柵P型層 1410:Heavily doped grating P-type layer
1411:重摻雜光柵N型層 1411:Heavily doped grating N-type layer
15:N型披覆層 15:N type coating layer
16:第二載子漸變躍遷層 16: Second carrier gradient transition layer
17:第三載子漸變躍遷層 17: The third carrier gradient transition layer
18:N型接觸層 18:N-type contact layer
19:N型金屬電極層 19:N-type metal electrode layer
2:條狀光阻 2: Strip photoresist
S10~S15、S20~S25:步驟 S10~S15, S20~S25: steps
第1圖,為本發明一較佳實施例之流程圖。 Figure 1 is a flow chart of a preferred embodiment of the present invention.
第2A、2B、2C圖,為本發明二較佳實施例之磊晶狀態流程示意圖。 Figures 2A, 2B, and 2C are schematic flow diagrams of the epitaxial state of the second preferred embodiment of the present invention.
第3圖,為本發明二較佳實施例之結構示意圖。 Figure 3 is a schematic structural diagram of the second preferred embodiment of the present invention.
第4圖,為本發明三較佳實施例之流程圖。 Figure 4 is a flow chart of the third preferred embodiment of the present invention.
第5A、5B圖,為本發明四較佳實施例之磊晶狀態流程示意圖。 Figures 5A and 5B are schematic flow diagrams of the epitaxial state of the fourth preferred embodiment of the present invention.
第6圖,為本發明四較佳實施例之結構示意圖。 Figure 6 is a schematic structural diagram of the fourth preferred embodiment of the present invention.
為使本領域具有通常知識者能清楚了解本發明之內容,謹以下列說明搭配圖式,敬請參閱。 In order to enable those with ordinary knowledge in the art to clearly understand the contents of the present invention, the following description is accompanied by the drawings, for which please refer.
請參閱第1~3圖,其係分別為本發明一較佳實施例之流程圖及二較佳實施例之磊晶狀態流程示意圖、結構示意圖。如圖所示,該脊狀/掩埋混合式DFB半導體雷射之磊晶製造方法係包含下列步驟:步驟S10,於一基板10上依序磊晶生成一N型材料區11、一主動區12及一P型材料區13而形成一雙異質結構,且步驟S11,磊晶生成該雙異質結構時,係設置一光柵層111於該N型材料區11中而使該光柵層111與該主動區12間形成一N型隔離層112。步驟S12,設置一蝕刻停止層132於該P型材料區13中而使該蝕刻停止層132之下、上分別形成鄰接之一P型下隔離層131與一P型上隔離層133。步驟S13,形成一穿隧接面層140鄰接於該P型上隔離層133上後,塗佈一條狀光阻2於該穿隧接面層140上;其中該穿隧接面層140係包含一重摻雜P型層1400及一重摻雜N型層1401,且該重摻雜P型層1400鄰接該P型上隔離層133,該重摻雜N型層1401鄰接於該重摻雜P型層1400上。步驟S14,向下蝕刻未覆蓋於該條狀光阻2之該穿隧接面層140及該P型上隔離層133並止於該蝕刻停止層132而形成一脊柱後,去除該條狀光阻2;其中 該主動區12未受蝕刻而未縮小發光範圍。步驟S15,一次性再成長依序形成一N型披覆層15及一N型接觸層18後,設置一N型金屬電極層19於該N型接觸層18上;其中該N型披覆層15掩埋包覆該脊柱,該N型接觸層18設於該N型披覆層15上。 Please refer to Figures 1 to 3, which are respectively a flow chart of a preferred embodiment of the present invention and a schematic flow chart and structural schematic diagram of the epitaxial state of the second preferred embodiment. As shown in the figure, the epitaxial manufacturing method of the ridge/buried hybrid DFB semiconductor laser includes the following steps: Step S10, sequentially epitaxially generate an N-type material region 11 and an active region 12 on a substrate 10 and a P-type material region 13 to form a double heterostructure, and in step S11, when the double heterostructure is epitaxially generated, a grating layer 111 is disposed in the N-type material region 11 so that the grating layer 111 and the active An N-type isolation layer 112 is formed between the regions 12 . Step S12 , an etching stop layer 132 is disposed in the P-type material region 13 to form an adjacent P-type lower isolation layer 131 and an adjacent P-type upper isolation layer 133 below and above the etching stop layer 132 . Step S13, after forming a tunnel junction layer 140 adjacent to the P-type upper isolation layer 133, apply a strip of photoresist 2 on the tunnel junction layer 140; wherein the tunnel junction layer 140 includes A heavily doped P-type layer 1400 and a heavily doped N-type layer 1401, and the heavily doped P-type layer 1400 is adjacent to the P-type upper isolation layer 133, and the heavily doped N-type layer 1401 is adjacent to the heavily doped P-type On level 1400. Step S14: Etch down the tunnel junction layer 140 and the P-type upper isolation layer 133 that are not covered by the strip photoresist 2 and stop at the etching stop layer 132 to form a spine, and then remove the strip photoresist 2. Resistance 2; among them The active area 12 is not etched and does not reduce the light emitting range. Step S15, after one-time re-growth sequentially forms an N-type cladding layer 15 and an N-type contact layer 18, an N-type metal electrode layer 19 is disposed on the N-type contact layer 18; wherein the N-type cladding layer 15 buries and covers the spine, and the N-type contact layer 18 is provided on the N-type cladding layer 15 .
如此,利用上述磊晶製造方法所製成之DFB半導體雷射結構1,係為將光柵設置於該N型材料區11中之半導體結構,其由該基板10向上磊晶形成之該主動區12係未受蝕刻縮小發光範圍,使該主動區12範圍大於該脊柱範圍而可有效增進載子傳輸效率並改善散熱功效。換言之,由於該工序未蝕刻至該主動區12範圍,故邏輯上係可提高整體製程良率與可靠度。並且,該脊柱由下而上依序為該P型上隔離層133、該重摻雜P型層1400及該重摻雜N型層1401,且蝕刻為非等向性蝕刻而使該脊柱之該穿隧接面層140與該P型上隔離層133範圍一致。於此,據該重摻雜P型層1400鄰接該P型上隔離層133,及該重摻雜N型層1401鄰接於該重摻雜P型層1400上之特性,進一步可轉置包覆該N型披覆層15及該N型接觸層18,以實現將習知BH結構需二次再成長工序簡化為一次性成長的作法。 In this way, the DFB semiconductor laser structure 1 made by the above-mentioned epitaxial manufacturing method is a semiconductor structure in which a grating is disposed in the N-type material region 11, and the active region 12 is epitaxially formed upward from the substrate 10. The light-emitting range is reduced without etching, so that the range of the active region 12 is larger than the range of the spine, which can effectively increase the carrier transmission efficiency and improve the heat dissipation effect. In other words, since the active area 12 is not etched in this process, it can logically improve the overall process yield and reliability. Moreover, the spine is the P-type upper isolation layer 133, the heavily doped P-type layer 1400 and the heavily doped N-type layer 1401 in sequence from bottom to top, and the etching is anisotropic etching to make the spine The tunnel junction layer 140 is in the same range as the P-type upper isolation layer 133 . Here, according to the characteristics that the heavily doped P-type layer 1400 is adjacent to the P-type upper isolation layer 133, and the heavily doped N-type layer 1401 is adjacent to the heavily doped P-type layer 1400, the cladding can be further transposed The N-type cladding layer 15 and the N-type contact layer 18 are used to simplify the conventional BH structure that requires two re-growth processes into one-time growth.
再者,利用前述製程手段為基礎,可再依此擴充各種功能層於此半導體結構中,進而具體實現總體較佳功效之DFB LD元件。於本實施例中,為降低該基板10與半導體材料間之晶格常數與熱膨脹係數差異所造成的不良影響,以及有效增進載子傳輸效率考量,於此結構更設有緩衝層(Buffer)及載子漸變躍遷層等,據此改善其磊晶電性與光性。是以,該N型材料區11由下而上依序可包含一緩衝層110、該光柵層111、該N型隔離層112、一第一載子漸變躍遷層113及一下侷限層114,且該緩衝層110鄰接該基板10,該下侷限層114鄰接該主動區12。另,為了提高主動區12發光後之光侷限效果,本具體結構附加了能 障層(Barrier)及該漸變層(GRIN),因此,該主動區12由下而上依序包含一下漸變層120、一下能障層121、一主動層122、一上能障層123及一上漸變層124,且該下漸變層120鄰接該下侷限層114,該上漸變層124鄰接該P型材料區13。該P型材料區13由下而上依序包含一上侷限層130、該P型下隔離層131、該蝕刻停止層132及該P型上隔離層133,且該上侷限層130鄰接該上漸變層124。又,該N型披覆層15與該N型接觸層18之間由下而上更設置有一第二載子漸變躍遷層16及一第三載子漸變躍遷層17。 Furthermore, based on the above-mentioned process means, various functional layers can be expanded in the semiconductor structure to achieve a DFB LD element with better overall efficiency. In this embodiment, in order to reduce the adverse effects caused by the difference in lattice constant and thermal expansion coefficient between the substrate 10 and the semiconductor material, and to effectively improve the carrier transmission efficiency, this structure is further provided with a buffer layer (Buffer) and Carrier gradient transition layer, etc., thereby improving its epitaxial electrical and optical properties. Therefore, the N-type material region 11 may include a buffer layer 110, the grating layer 111, the N-type isolation layer 112, a first carrier gradient transition layer 113 and a lower localization layer 114 in order from bottom to top, and The buffer layer 110 is adjacent to the substrate 10 , and the lower limiting layer 114 is adjacent to the active region 12 . In addition, in order to improve the light localization effect after the active area 12 emits light, this specific structure is additionally equipped with an energy The barrier layer (Barrier) and the gradient layer (GRIN), therefore, the active area 12 sequentially includes a lower gradient layer 120, a lower energy barrier layer 121, an active layer 122, an upper energy barrier layer 123 and an upper energy barrier layer 123 from bottom to top. The upper gradient layer 124 is adjacent to the lower limiting layer 114 , and the upper gradient layer 124 is adjacent to the P-type material region 13 . The P-type material region 13 includes an upper confinement layer 130, the P-type lower isolation layer 131, the etching stop layer 132 and the P-type upper isolation layer 133 in sequence from bottom to top, and the upper confinement layer 130 is adjacent to the upper Gradient layer 124. In addition, a second carrier gradient transition layer 16 and a third carrier gradient transition layer 17 are provided from bottom to top between the N-type cladding layer 15 and the N-type contact layer 18 .
其中,該基板10可採用InP材料;該緩衝層110及該N型隔離層112採用n-InP材料、該光柵111層採用n-In0.71Ga0.29As0.62P0.38材料、該第一載子漸變躍遷層113採用n-(Al0.85Ga0.15)0.47In0.53As材料及該下侷限層114採用n-In0.53Al0.47As材料。該下漸變層120及該上漸變層124係採用(Al0.85Ga0.15)0.47In0.53As<->(Al0.44Ga0.56)0.47In0.53As材料、該下能障層121及該上能障層123採用(Al0.23Ga0.77)0.52In0.48As材料及該主動層122採用(Al0.22Ga0.78)0.37In0.63As材料。該上侷限層130採用p-In0.53Al0.47As材料、該P型下隔離層131及該P型上隔離層133採用p-InP材料、該蝕刻停止層132採用p-In0.84Ga0.16As0.34P0.66材料。該穿隧接面層140採用InGaAsP、AlGaInAs、InGaAs、AlInAs或InP材料,該N型披覆層15採用InP材料,該第二載子漸變躍遷層16採用n-In0.71Ga0.29As0.62P0.38材料,該第三載子漸變躍遷層17採用n-In0.61Ga0.39As0.84P0.16材料,且該N型接觸層18採用n-In0.53Ga0.47As材料。 Among them, the substrate 10 can be made of InP material; the buffer layer 110 and the N-type isolation layer 112 can be made of n-InP material, the grating 111 layer can be made of n-In 0.71 Ga 0.29 As 0.62 P 0.38 material, and the first carrier gradient The transition layer 113 is made of n-(Al 0.85 Ga 0.15 ) 0.47 In 0.53 As material and the lower confinement layer 114 is made of n-In 0.53 Al 0.47 As material. The lower gradient layer 120 and the upper gradient layer 124 are made of (Al 0.85 Ga 0.15 ) 0.47 In 0.53 As <-> (Al 0.44 Ga 0.56 ) 0.47 In 0.53 As material, the lower energy barrier layer 121 and the upper energy barrier layer. 123 is made of (Al 0.23 Ga 0.77 ) 0.52 In 0.48 As material and the active layer 122 is made of (Al 0.22 Ga 0.78 ) 0.37 In 0.63 As material. The upper confining layer 130 is made of p-In 0.53 Al 0.47 As material, the P-type lower isolation layer 131 and the P-type upper isolation layer 133 are made of p-InP material, and the etching stop layer 132 is made of p-In 0.84 Ga 0.16 As 0.34 P 0.66 material. The tunnel junction layer 140 is made of InGaAsP, AlGaInAs, InGaAs, AlInAs or InP material, the N-type cladding layer 15 is made of InP material, and the second carrier gradient transition layer 16 is made of n-In 0.71 Ga 0.29 As 0.62 P 0.38 Materials: the third carrier gradient transition layer 17 is made of n-In 0.61 Ga 0.39 As 0.84 P 0.16 material, and the N-type contact layer 18 is made of n-In 0.53 Ga 0.47 As material.
請參閱第4~6圖,其係分別為本發明三較佳實施例之流程圖及四較佳實施例之磊晶狀態流程示意圖、結構示意圖。如圖所示,利用脊狀/掩埋混合式DFB半導體雷射之磊晶製造方法所製成之該DFB半導體雷射結構1係為將光 柵設置於P型半導體材料上之結構,其由下而上依序包含一基板10、一N型材料區11、一主動區12及一P型材料區13、一光柵穿隧接面層141、一N型披覆層15、一N型接觸層18及一N型金屬電極層19,以運用具n-p接面之光柵TJ結構簡化傳統BH結構之二次再成長工序,並轉置P型披覆層及P型接觸層為N型者,使達優化製程工序並增進載子傳輸效率及散熱度之效益,而該脊狀/掩埋混合式DFB半導體雷射之磊晶製造方法可包含下列步驟。 Please refer to Figures 4 to 6, which are respectively a flow chart of the third preferred embodiment of the present invention and a schematic flow chart and structural schematic diagram of the epitaxial state of the fourth preferred embodiment. As shown in the figure, the DFB semiconductor laser structure 1 made by using the epitaxial manufacturing method of the ridge/buried hybrid DFB semiconductor laser is to convert light A structure with a gate disposed on a P-type semiconductor material, which sequentially includes a substrate 10, an N-type material region 11, an active region 12, a P-type material region 13, and a grating tunnel junction layer 141 from bottom to top. , an N-type cladding layer 15, an N-type contact layer 18 and an N-type metal electrode layer 19, to use the grating TJ structure with n-p junction to simplify the secondary re-growth process of the traditional BH structure, and transpose the P-type The cladding layer and the P-type contact layer are N-type, which can optimize the process and improve the carrier transmission efficiency and heat dissipation. The epitaxy manufacturing method of the ridge/buried hybrid DFB semiconductor laser can include the following steps.
步驟S20,於該基板10上依序磊晶生成一N型材料區11、一主動區12及一P型材料區13而形成一雙異質結構,且磊晶生成該雙異質結構時,步驟S21,設置一蝕刻停止層132於該P型材料區13中而使該蝕刻停止層132之下、上分別形成鄰接之一P型下隔離層131與一P型上隔離層133。步驟S22,形成具一光柵結構之一光柵穿隧接面層141鄰接於該P型上隔離層133上後,塗佈一條狀光阻2於該光柵穿隧接面層141上,而該光柵穿隧接面層141係包含一重摻雜光柵P型層1410及一重摻雜光柵N型層1411,且該重摻雜光柵P型層1410鄰接該P型上隔離層133,該重摻雜光柵N型層1411鄰接於該重摻雜光柵P型層1410上。 Step S20: sequentially epitaxially generate an N-type material region 11, an active region 12 and a P-type material region 13 on the substrate 10 to form a double heterostructure. When the double heterostructure is epitaxially generated, step S21 , an etching stop layer 132 is disposed in the P-type material region 13 so that an adjacent P-type lower isolation layer 131 and an adjacent P-type upper isolation layer 133 are respectively formed below and above the etching stop layer 132 . Step S22: After forming a grating tunnel junction layer 141 with a grating structure adjacent to the P-type upper isolation layer 133, a strip of photoresist 2 is coated on the grating tunnel junction layer 141, and the grating The tunnel junction layer 141 includes a heavily doped grating P-type layer 1410 and a heavily doped grating N-type layer 1411, and the heavily doped grating P-type layer 1410 is adjacent to the P-type upper isolation layer 133. The heavily doped grating P-type layer 1410 is adjacent to the P-type upper isolation layer 133. The N-type layer 1411 is adjacent to the heavily doped grating P-type layer 1410.
步驟S23,向下蝕刻未覆蓋於該條狀光阻2之該光柵穿隧接面層141及該P型上隔離層133並止於該蝕刻停止層132而形成一脊柱後,去除該條狀光阻2,其中,該主動區12未受蝕刻而未縮小發光範圍。步驟S24,一次性再成長依序形成一N型披覆層15及一N型接觸層18,而使該N型披覆層15掩埋包覆該脊柱,該N型接觸層18設於該N型披覆層15上後,步驟S25,設置一N型金屬電極層19於該N型接觸層18上。由於製程中,蝕刻為非等向性蝕刻而使該脊柱之該光柵穿隧接面層141與該P型上隔離層133範圍一致,故可知,該DFB半導體雷射結構1中,由該基板10向上磊晶形成之該主動區12係未受蝕刻縮小發光範圍,而使 該主動區12範圍大於該脊柱範圍,且該脊柱由下而上依序為該P型上隔離層133、該重摻雜光柵P型層1410及該重摻雜光柵N型層1411,以供漸進地成功轉置傳統BH結構中P型披覆層為N型者。 Step S23: Etch down the grating tunnel junction layer 141 and the P-type upper isolation layer 133 that are not covered by the strip photoresist 2 and stop at the etching stop layer 132 to form a spine, and then remove the strip. Photoresist 2, wherein the active area 12 is not etched and does not reduce the light-emitting range. Step S24, an N-type cladding layer 15 and an N-type contact layer 18 are sequentially formed in one go, so that the N-type cladding layer 15 buries and covers the spine, and the N-type contact layer 18 is disposed on the N-type cladding layer 15. After the N-type cladding layer 15 is formed on the N-type cladding layer 15 , in step S25 , an N-type metal electrode layer 19 is disposed on the N-type contact layer 18 . Since during the process, the etching is anisotropic etching to make the grating tunnel junction layer 141 of the spine consistent with the P-type upper isolation layer 133, it can be seen that in the DFB semiconductor laser structure 1, the substrate 10 The active region 12 formed by upward epitaxy is not etched to reduce the luminous range, so that The range of the active region 12 is larger than the range of the spine, and the spine is the P-type upper isolation layer 133, the heavily doped grating P-type layer 1410 and the heavily doped grating N-type layer 1411 from bottom to top. Progressively successfully transposed the P-type cladding layer in the traditional BH structure into an N-type one.
於本實施例中,可利用前述製程手段為基礎,再依此擴充各種功能層於此半導體結構中,舉例而言,該基板10可採用InP材料,且為降低該基板10與半導體材料間之晶格常數與熱膨脹係數差異所造成的不良影響並有效增進載子傳輸效率考量,該基板10與該N型材料區11之結構間更可設置緩衝層(Buffer)及載子漸變躍遷層等,以改善其磊晶電性與光性。是以,該N型材料區11由下而上依序包含採用n-InP材料之一緩衝層110、採用n-(Al0.85Ga0.15)0.47In0.53As材料之一第一載子漸變躍遷層113及採用n-In0.53Al0.47As材料之一下侷限層114,且該緩衝層110鄰接該基板10,該下侷限層114鄰接該主動區12。為了提高該主動區12發光後之光侷限效果,本具體結構附加了能障層及漸變層,使該主動區12由下而上依序可包含一下漸變層120、一下能障層121、一主動層122、一上能障層123及一上漸變層124,該下漸變層120鄰接該下侷限層114,該上漸變層124鄰接該P型材料區13,且該下漸變層120及該上漸變層124採用(Al0.85Ga0.15)0.47In0.53As<->(Al0.44Ga0.56)0.47In0.53As材料、該下能障層121及該上能障層123採用(Al0.23Ga0.77)0.52In0.48As材料及該主動層122採用(Al0.22Ga0.78)0.37In0.63As材料。該P型材料區13由下而上依序包含採用p-In0.53Al0.47As材料之一上侷限層130、該P型下隔離層131、採用p-In0.84Ga0.16As0.34P0.66材料之該蝕刻停止層132及該P型上隔離層133,且該P型下隔離層131及該P型上隔離層133採用p-InP材料,該上侷限層130鄰接該上漸變層124。該光柵穿隧接面層141採用InGaAsP、AlGaInAs、InGaAs、AlInAs或InP材料,且該重摻雜光柵P型層1410 採用p-In0.71Ga0.29As0.62P0.38材料,且該重摻雜光柵N型1411層採用n-In0.71Ga0.29As0.62P0.38材料。又,採用InP材料之該N型披覆層15與採用n-In0.53Ga0.47As材料之該N型接觸層18之間由下而上更設置有一第二載子漸變躍遷層16及一第三載子漸變躍遷層17,且該第二載子漸變躍遷層16採用n-In0.71Ga0.29As0.62P0.38材料,該第三載子漸變躍遷層17採用n-In0.61Ga0.39As0.84P0.16材料,以漸變能階而確保磊晶品質,進而具體實現總體較佳功效之DFB LD元件。 In this embodiment, the above-mentioned process means can be used as a basis, and various functional layers can be expanded in the semiconductor structure accordingly. For example, the substrate 10 can be made of InP material, and in order to reduce the interaction between the substrate 10 and the semiconductor material Considering the adverse effects caused by differences in lattice constants and thermal expansion coefficients and effectively improving carrier transmission efficiency, a buffer layer (Buffer) and a carrier gradient transition layer can be provided between the structure of the substrate 10 and the N-type material region 11. To improve its epitaxial electrical and optical properties. Therefore, the N-type material region 11 includes, from bottom to top, a buffer layer 110 made of n-InP material, and a first carrier gradient transition layer made of n-(Al 0.85 Ga 0.15 ) 0.47 In 0.53 As material. 113 and a lower confinement layer 114 of n-In 0.53 Al 0.47 As material is used, and the buffer layer 110 is adjacent to the substrate 10 , and the lower confinement layer 114 is adjacent to the active region 12 . In order to improve the light localization effect of the active area 12 after emitting light, an energy barrier layer and a gradient layer are added to this specific structure, so that the active area 12 can include a gradient layer 120, an energy barrier layer 121, and a gradient layer 120 from bottom to top. Active layer 122, an upper energy barrier layer 123 and an upper gradient layer 124, the lower gradient layer 120 is adjacent to the lower confinement layer 114, the upper gradient layer 124 is adjacent to the P-type material region 13, and the lower gradient layer 120 and the The upper gradient layer 124 is made of (Al 0.85 Ga 0.15 ) 0.47 In 0.53 As <-> (Al 0.44 Ga 0.56 ) 0.47 In 0.53 As material, the lower energy barrier layer 121 and the upper energy barrier layer 123 are made of (Al 0.23 Ga 0.77 ) The 0.52 In 0.48 As material and the active layer 122 are made of (Al 0.22 Ga 0.78 ) 0.37 In 0.63 As material. The P-type material region 13 includes, in order from bottom to top, an upper confinement layer 130 made of p-In 0.53 Al 0.47 As material, the P-type lower isolation layer 131 , and a layer made of p-In 0.84 Ga 0.16 As 0.34 P 0.66 material. The etch stop layer 132 and the P-type upper isolation layer 133 are made of p-InP material, and the P-type lower isolation layer 131 and the P-type upper isolation layer 133 are made of p-InP material. The upper confinement layer 130 is adjacent to the upper gradient layer 124 . The grating tunnel junction layer 141 is made of InGaAsP, AlGaInAs, InGaAs, AlInAs or InP material, and the heavily doped grating P-type layer 1410 is made of p-In 0.71 Ga 0.29 As 0.62 P 0.38 material, and the heavily doped grating N Type 1411 layer uses n-In 0.71 Ga 0.29 As 0.62 P 0.38 material. In addition, a second carrier gradient transition layer 16 and a first carrier gradient transition layer 16 are provided from bottom to top between the N-type cladding layer 15 made of InP material and the N-type contact layer 18 made of n-In 0.53 Ga 0.47 As material. Three-carrier gradient transition layer 17, and the second carrier gradient transition layer 16 adopts n-In 0.71 Ga 0.29 As 0.62 P 0.38 material, and the third carrier gradient transition layer 17 adopts n-In 0.61 Ga 0.39 As 0.84 P The 0.16 material uses gradient energy levels to ensure epitaxial quality, thus achieving a DFB LD element with better overall performance.
綜上,本發明之工序未蝕刻該主動區12而未受縮小該主動層122之發光範圍,使可提高整體製程良率與可靠度。並且,該N型披覆層15完全掩埋包覆該脊柱,該N型接觸層18設於該N型披覆層15上,如此,即可使光場與該主動層122的量子井耦合更趨於該主動層122之中間位置,進而使該主動層122的下半部能被有效運用而補償垂直方向的光場偏移,以達提高模態增益及降低Ith之效。 In summary, the process of the present invention does not etch the active region 12 and does not reduce the light-emitting range of the active layer 122, so that the overall process yield and reliability can be improved. Moreover, the N-type cladding layer 15 completely buries and covers the spine, and the N-type contact layer 18 is provided on the N-type cladding layer 15. In this way, the light field can be more coupled with the quantum well of the active layer 122. Approaching the middle position of the active layer 122, the lower half of the active layer 122 can be effectively used to compensate for the light field shift in the vertical direction, thereby improving the modal gain and reducing Ith .
以上所述者,僅為本發明申請專利範圍中之較佳實施例說明,而非得依此實施例內容據以限定本發明之權利範圍;故在不脫離本發明之均等範圍下所作之文義變化或修飾,仍皆應涵蓋於本發明之申請專利範圍內。 The above is only an illustration of the preferred embodiments within the patentable scope of the present invention, and is not intended to limit the scope of rights of the present invention based on the content of these embodiments; therefore, any changes in the meaning of the present invention may be made without departing from the equal scope of the present invention. or modifications should still be covered by the patentable scope of the present invention.
S20~S25:步驟 S20~S25: steps
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