TWI809756B - Detecting device and method for driving detecting device - Google Patents
Detecting device and method for driving detecting device Download PDFInfo
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本發明是有關於一種電子裝置及電子裝置的驅動方法,且特別是有關於一種偵測裝置及偵測裝置的驅動方法。The present invention relates to an electronic device and a driving method of the electronic device, and in particular to a detection device and a driving method of the detection device.
電晶體應用於光感測器中,其元件特性的變異,會使得光感測器輸出的讀取信號誤差擴大,容易導致信號範圍超出讀取電路的輸入範圍。因此需要可降低偵測裝置因電晶體的特性變異而造成的感測電流的誤差的電子裝置及電子裝置的驅動方法。Transistors are used in light sensors, and variations in the characteristics of the components will increase the error of the read signal output by the light sensor, and easily cause the signal range to exceed the input range of the read circuit. Therefore, there is a need for an electronic device and a driving method for the electronic device that can reduce the error of the sensing current caused by the characteristic variation of the transistor in the detection device.
本發明的偵測裝置包括像素電路以及補償電路。像素電路包括第一電晶體、第二電晶體、第三電晶體及光電二極體。光電二極體耦接在第一電晶體及第二電晶體之間。補償電路包括第一端及第二端。補償電路的第一端耦接至第三電晶體。補償電路的第二端耦接至第一電晶體。 本發明的偵測裝置的驅動方法適於驅動偵測裝置。偵測裝置包括像素電路及補償電路。像素電路包括第一電晶體、第二電晶體、第三電晶體及光電二極體,且光電二極體耦接於第一電晶體及第二電晶體之間,且補償電路耦接於第三電晶體與第一電晶體之間。偵測裝置的驅動方法包括:進行重置步驟,其中於進行重置步驟下,第一電晶體及第三電晶體導通,並透過補償電路調控第二電晶體的控制端的電壓;進行照光積分步驟,其中於進行照光積分步驟下,第一電晶體及第三電晶體不導通;以及進行讀出步驟,其中於進行讀出步驟下,第一電晶體不導通,且第三電晶體導通。 The detection device of the present invention includes a pixel circuit and a compensation circuit. The pixel circuit includes a first transistor, a second transistor, a third transistor and a photodiode. The photodiode is coupled between the first transistor and the second transistor. The compensation circuit includes a first terminal and a second terminal. The first end of the compensation circuit is coupled to the third transistor. The second end of the compensation circuit is coupled to the first transistor. The detection device driving method of the present invention is suitable for driving the detection device. The detection device includes a pixel circuit and a compensation circuit. The pixel circuit includes a first transistor, a second transistor, a third transistor and a photodiode, and the photodiode is coupled between the first transistor and the second transistor, and the compensation circuit is coupled to the first transistor. Between the three transistors and the first transistor. The driving method of the detection device includes: performing a reset step, wherein in the reset step, the first transistor and the third transistor are turned on, and regulating the voltage of the control terminal of the second transistor through a compensation circuit; performing an illumination integration step , wherein the first transistor and the third transistor are not conducted during the light integration step; and the readout step is performed, wherein the first transistor is not conducted and the third transistor is conducted during the readout step.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.
通過參考以下的詳細描述並同時結合圖式可以理解本發明。須注意的是,為了使讀者能容易瞭解及為了圖式的簡潔,本發明中的多張圖式只繪出偵測裝置的一部分,且圖式中的特定元件並非依照實際比例繪圖。此外,圖中各元件的數量及尺寸僅作為示意,並非用來限制本發明的範圍。The present invention can be understood by referring to the following detailed description when taken in conjunction with the accompanying drawings. It should be noted that, for the sake of easy understanding by readers and brevity of the drawings, several drawings in the present invention only depict a part of the detection device, and specific components in the drawings are not drawn according to actual scale. In addition, the quantity and size of each element in the figure are only for illustration, and are not intended to limit the scope of the present invention.
在下文說明書與申請專利範圍中,「具有」與「包括」等詞為開放式詞語,因此其應被解釋為「含有但不限定為…」之意。In the following specification and patent application scope, words such as "have" and "including" are open-ended words, so they should be interpreted as "including but not limited to...".
應瞭解到,雖然術語第一、第二、第三…可用以描述多種組成元件,但組成元件並不以此術語為限。此術語僅用於區別說明書內單一組成元件與其他組成元件。申請專利範圍中可不使用相同術語,而依照申請專利範圍中元件宣告的順序以第一、第二、第三…取代。因此,在下文說明書中,第一組成元件在申請專利範圍中可能為第二組成元件。It should be understood that although the terms first, second, third... may be used to describe various constituent elements, the constituent elements are not limited to this term. This term is only used to distinguish a single constituent element from other constituent elements in the specification. The same term may not be used in the scope of the patent application, but replaced by first, second, third... in accordance with the declared order of elements in the scope of the patent application. Therefore, in the following description, a first constituent element may be a second constituent element in the scope of the patent application.
在本發明一些實施例中,關於接合、連接之用語例如「連接」、「互連」等,除非特別定義,否則可指兩個結構是直接接觸,或者亦可指兩個結構並非直接接觸,其中有其它結構設於此兩個結構之間。且此關於接合、連接之用語亦可包括兩個結構都可移動,或者兩個結構都固定之情況。此外,用語「耦接」包括任何直接及間接的電性連接手段。In some embodiments of the present invention, terms such as "connection" and "interconnection" related to joining and connection, unless otherwise specified, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact, There are other structures located between these two structures. And the terms about joining and connecting may also include the situation that both structures are movable, or both structures are fixed. In addition, the term "coupled" includes any direct and indirect means of electrical connection.
本發明的偵測裝置可應用在電子裝置中,電子裝置可包括顯示裝置、天線裝置、感測裝置、發光裝置、或拼接裝置,但不以此為限。電子裝置可包括可彎折或可撓式電子裝置。電子裝置可包括電子元件。電子裝置例如包括液晶(liquid crystal)層或發光二極體(Light Emitting Diode,LED)。電子元件可包括被動元件與主動元件,例如電容、電阻、電感、可變電容、濾波器、二極體、電晶體(transistors)、感應器、微機電系統元件(MEMS)、液晶晶片(liquid crystal chip)、控制器(controller)等,但不限於此。二極體可包括發光二極體或光電二極體。發光二極體可例如包括有機發光二極體(organic light emitting diode,OLED)、次毫米發光二極體(mini LED)、微發光二極體(micro LED)、量子點發光二極體(quantum dot LED)、螢光(fluorescence)、磷光(phosphor)或其他適合之材料、或上述組合,但不以此為限。感應器可例如包括電容式感應器(capacitive sensors)、光學式感應器(optical sensors)、電磁式感應器(electromagnetic sensors)、指紋感應器(fingerprint sensor,FPS)、觸控感應器(touch sensor)、天線(antenna)、或觸控筆(pen sensor)等,但不限於此。控制器可例如包括時序控制器(timing controller)等,但不限於此。下文將以顯示裝置做為電子裝置以說明本發明內容,但本發明不以此為限。The detection device of the present invention can be applied in an electronic device, and the electronic device can include a display device, an antenna device, a sensing device, a light emitting device, or a splicing device, but is not limited thereto. Electronic devices may include bendable or flexible electronic devices. Electronic devices may include electronic components. The electronic device includes, for example, a liquid crystal (liquid crystal) layer or a light emitting diode (Light Emitting Diode, LED). Electronic components can include passive components and active components, such as capacitors, resistors, inductors, variable capacitors, filters, diodes, transistors, sensors, MEMS, liquid crystal chips chip), controller (controller), etc., but not limited thereto. The diodes may include light emitting diodes or photodiodes. The light emitting diodes may, for example, include organic light emitting diodes (organic light emitting diodes, OLEDs), submillimeter light emitting diodes (mini LEDs), micro light emitting diodes (micro LEDs), quantum dot light emitting diodes (quantum dot LED), fluorescence (fluorescence), phosphorescence (phosphor) or other suitable materials, or a combination of the above, but not limited thereto. The sensors may, for example, include capacitive sensors, optical sensors, electromagnetic sensors, fingerprint sensors (fingerprint sensor, FPS), touch sensors (touch sensor) , antenna (antenna), or stylus (pen sensor), etc., but not limited thereto. The controller may include, for example, a timing controller, etc., but is not limited thereto. In the following, a display device is used as an electronic device to illustrate the content of the present invention, but the present invention is not limited thereto.
現將詳細地參考本發明的圖式來說明示範性實施例的實例。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Examples of exemplary embodiments will now be described in detail with reference to the accompanying drawings of the present invention. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.
圖1繪示本發明一實施例的偵測裝置的概要示意圖。圖2繪示圖1實施例的電壓訊號於各步驟下的波形示意圖。請參考圖1及圖2,偵測裝置100包括像素電路110、補償電路120及輸出電路130。像素電路110包括第一電晶體T1、第二電晶體T2、第三電晶體T3及光電二極體PD。光電二極體PD耦接在第一電晶體T1及第二電晶體T2之間,且補償電路120耦接於第三電晶體T3與第一電晶體T1之間。第三電晶體T3輸出感測電流Isen。補償電路120包括第一端N1及第二端N2。補償電路120的第一端N1耦接至第三電晶體T3且接收感測電流Isen。補償電路120的第二端N2耦接至第一電晶體T1。在重置步驟P1,補償電路120根據對應於感測電流Isen的感測電壓Vsen調控第二電晶體T2的控制端的電壓Vg。FIG. 1 shows a schematic diagram of a detection device according to an embodiment of the present invention. FIG. 2 is a schematic diagram of waveforms of voltage signals in various steps in the embodiment of FIG. 1 . Please refer to FIG. 1 and FIG. 2 , the detection device 100 includes a
具體而言,第一電晶體T1可作為重置電晶體,包括第一端、第二端及控制端。第一電晶體T1的第一端可通過訊號線210耦接至補償電路120的第二端N2。第一電晶體T1的第二端舉例可耦接至光電二極體PD的陰極端及第二電晶體T2的控制端,但不限於此。於其它實施例下(未繪示),第一電晶體T1的第二端舉例可耦接至光電二極體PD的陽極端及第二電晶體T2的控制端,但不限於此。第一電晶體T1的控制端可耦接至重置信號Vrst。光電二極體PD(例如陰極端)可耦接至第一電晶體T1的第二端及第二電晶體T2的控制端,光電二極體PD(例如陽極端)可耦接至接地電壓或電壓源C2(例如低電壓,舉例VSS)。Specifically, the first transistor T1 can be used as a reset transistor, including a first terminal, a second terminal and a control terminal. The first terminal of the first transistor T1 can be coupled to the second terminal N2 of the
具體而言,第二電晶體T2作為驅動電晶體,包括第一端、第二端及控制端。第二電晶體T2的第一端耦接至電壓源C1(例如高電壓,舉例VDD)。第二電晶體T2的第二端耦接至第三電晶體的第一端。第二電晶體T2的控制端耦接至光電二極體(例如陰極端)及第一電晶體T1的第二端。第三電晶體T3作為第一選擇電晶體,包括第一端、第二端及控制端。第三電晶體T3的第一端耦接至第二電晶體T2的第二端。第三電晶體T3的第二端通過訊號線220耦接至補償電路120的第一端N1。第三電晶體T3的控制端耦接至第一控制信號V1。Specifically, the second transistor T2 is used as a driving transistor and includes a first terminal, a second terminal and a control terminal. A first terminal of the second transistor T2 is coupled to a voltage source C1 (such as a high voltage, such as VDD). The second terminal of the second transistor T2 is coupled to the first terminal of the third transistor. The control terminal of the second transistor T2 is coupled to the photodiode (such as the cathode terminal) and the second terminal of the first transistor T1. The third transistor T3 is used as the first selection transistor and includes a first terminal, a second terminal and a control terminal. A first terminal of the third transistor T3 is coupled to a second terminal of the second transistor T2. The second end of the third transistor T3 is coupled to the first end N1 of the
在一些實施例中,補償電路120可包括電流電壓轉換器202、比較器204及/或第五電晶體M1。電流電壓轉換器202可包括第一端及第二端。電流電壓轉換器202的第一端可耦接至第三電晶體T3且接收感測電流Isen。電流電壓轉換器202可將感測電流Isen轉換為感測電壓Vsen,而此感測電壓Vsen例如產生在電流電壓轉換器202的第二端。In some embodiments, the
在一些實施例中,電流電壓轉換器202可包括放大器AMP及/或電阻R,但不限於此。放大器AMP可例如具有非反向輸入端、反向輸入端及輸出端。放大器AMP的非反向輸入端可接地,放大器AMP的反向輸入端可作為電流電壓轉換器202的第一端。放大器AMP的輸出端可作為電流電壓轉換器202的第二端。電阻R可例如耦接在放大器AMP的反向輸入端與輸出端之間。In some embodiments, the current-to-
在一些實施例中,比較器204可包括第一輸入端(例如反向輸入端)、第二輸入端(例如非反向輸入端)及輸出端。比較器204的第一輸入端可耦接至電流電壓轉換器202的第二端,以接收感測電壓Vsen。比較器204的第二端可耦接至資料電壓Vd。比較器204可根據感測電壓Vsen及資料電壓Vd以在其輸出端產生一控制信號Vsw。控制信號Vsw可用以控制第五電晶體M1的導通狀態。In some embodiments, the
在一些實施例中,第五電晶體M1包括第一端、第二端及控制端。第五電晶體M1的第一端通過訊號線210可耦接至第一電晶體T1的第一端。第五電晶體M1的第二端可耦接至外部電壓源Vramp。第五電晶體M1的控制端可耦接至比較器204的輸出端。在一些實施例中,比較器204可根據感測電壓Vsen及資料電壓Vd輸出控制信號Vsw,以控制第五電晶體M1的導通狀態,而當第五電晶體M1導通時,可透過將外部電壓源Vramp輸出至像素電路110來調控第二電晶體的控制端的電壓Vg,但不限於此。In some embodiments, the fifth transistor M1 includes a first terminal, a second terminal and a control terminal. The first end of the fifth transistor M1 can be coupled to the first end of the first transistor T1 through the
此外,輸出電路130可包括第四電晶體T4。第四電晶體T4作為第二選擇電晶體,包括第一端、第二端及控制端。第四電晶體T4的第一端可耦接至補償電路120的第一端N1。第四電晶體T4的第二端可作為輸出端,以輸出對應感測電流Isen的感測電壓Vsen,作為輸出電壓Vout。在一些實施例中,第四電晶體T4的控制端可耦接至第二控制信號V2。In addition, the
在一些實施例中,第一電晶體T1、第二電晶體T2、第三電晶體T3及/或第四電晶體T4例如是NMOS電晶體,第五電晶體M1例如是PMOS電晶體,但不限於此。本發明對電晶體的形式不加以限制。In some embodiments, the first transistor T1, the second transistor T2, the third transistor T3 and/or the fourth transistor T4 are, for example, NMOS transistors, and the fifth transistor M1 is, for example, a PMOS transistor, but not limited to this. The present invention is not limited to the form of the transistor.
請再參考圖1及圖2,偵測裝置100的操作步驟可包括進行重置步驟P1、進行照光積分步驟P2及/或進行讀出步驟P3。在進行重置步驟P1下,可透過補償電路120來調控第二電晶體T2的控制端的電壓。而圖2顯示於上述不同步驟下之重置信號Vrest、外部電壓源Vramp的信號、第一控制信號V1(提供給第三電晶體T4的控制信號)及第二控制信號V2(提供給第四電晶體T4的控制信號)分別的電壓波形示意圖。Please refer to FIG. 1 and FIG. 2 again, the operation steps of the detection device 100 may include performing a resetting step P1 , performing a light integration step P2 and/or performing a readout step P3 . When the reset step P1 is performed, the voltage of the control terminal of the second transistor T2 can be regulated through the
在一些實施例中,在重置步驟P1下,第一電晶體T1、第三電晶體T3及第五電晶體M1可例如導通(及開啟),且第四電晶體T4不導通(及關閉)。在重置步驟P1下,可透過補償電路120調控第二電晶體T2的控制端的電壓。在重置步驟P1下,第五電晶體M1可例如根據前述之感測電壓Vsen及資料電壓Vd輸出控制信號Vsw而選擇性導通。當第五電晶體M1導通時,以通過外部電壓源Vramp來調控第二電晶體T2的控制端的電壓。舉例來說,在重置步驟P1下,第二電晶體T2的控制端的電壓Vg例如可隨著所提供的外部電壓源Vramp而調變。詳細來說,外部電壓源Vramp可例如為電壓可調變的電壓源,其例如可由負電壓逐步調變至高電壓,故於重置步驟P1下,且當第五電晶體M1導通下,第二電晶體T2的控制端的電壓Vg可例如根據所接收到的外部電壓源Vramp的電壓而同步調變,直到感測電壓Vsen與給定的資料電壓Vd相同時,比較器204會輸出一高電壓的控制信號Vsw以使第五電晶體M1不導通。當第五電晶體M1不導通時,外部電壓源Vramp即不會再輸出至像素電路110來調控第二電晶體的控制端的電壓Vg。因此,此時第二電晶體T2的控制端的電壓Vg可對應到感測電壓Vsen的電壓值,以達到電流初始化,完成重置補償的操作。In some embodiments, under the reset step P1, the first transistor T1, the third transistor T3, and the fifth transistor M1 may be turned on (and turned on), for example, and the fourth transistor T4 is not turned on (and turned off). . In the reset step P1, the voltage of the control terminal of the second transistor T2 can be regulated through the
接著,在照光積分步驟P2下,第一電晶體T1、第三電晶體T3及/或第四電晶體T4例如不導通。在照光積分步驟P2下,當第三電晶體T3例如不導通,可避免初始化電流在照光積分步驟P2下從像素電路110流到補償電路120。接著,在讀出步驟P3,第一電晶體T1例如不導通,第三電晶體T3及第四電晶體T4例如導通,以使感測電壓Vsen可從像素電路110被讀出,並且作為輸出電壓Vout,輸出至下一級電路。Next, in the light integration step P2 , the first transistor T1 , the third transistor T3 and/or the fourth transistor T4 are not turned on, for example. In the light integration step P2, when the third transistor T3 is not turned on, for example, the initialization current can be prevented from flowing from the
在一些實施例中,當第五電晶體M1導通時,外部電壓源Vramp可通過補償電路120輸入至像素電路110。外部電壓源Vramp可例如是三角波或其他形狀的信號波形,本發明並不加以限制。因此,當第二電晶體T2發生特性變異時(例如閾值電壓Vth改變)可通過外部電壓源Vramp來調控第二電晶體T2的控制端的電壓Vg,以將第二電晶體T2的輸出電流Id初始化。電流初始化例如是指調控第二電晶體T2的控制端的電壓Vg,使電壓Vg與閾值電壓(Vth)的差值不會因為第二電晶體T2發生特性變異而改變,可降低第二電晶體T2因特性變異而輸出差異太大的輸出電流Id,藉此可降低因電晶體的特性變異而造成的感測電流的誤差。In some embodiments, when the fifth transistor M1 is turned on, the external voltage source Vramp can be input to the
在圖1的實施例中,偵測裝置100可包括一個像素電路110、一個補償電路120及/或一個輸出電路130,但不限於此。在一實施例中,偵測裝置可包括多個像素電路、至少一個補償電路及多個輸出電路。也就是說,多個像素電路可共用一個補償電路,但不限於此。In the embodiment of FIG. 1 , the detection device 100 may include a
圖3繪示本發明另一實施例的偵測裝置的概要示意圖。請參考圖1及圖3,本實施例的偵測裝置300類似於圖1實施例的偵測裝置100,兩者之間主要的差異例如在於偵測裝置300包括像素電路110_1、像素電路110_2、一個補償電路120及或輸出電路130_1、輸出電路130_2。像素電路110_1、像素電路110_2例如是位在同一像素行(column)的像素電路。也就是說,像素電路110_1、像素電路110_2可共用一個補償電路120。在一些實施中,補償電路120可分時調控各像素電路中的第二電晶體T2的控制端的電壓Vg,以初始化各第二電晶體T2的輸出電流Id,降低不同像素電路中的第二電晶體T2因特性變異而輸出差異太大的輸出電流Id。因此,偵測裝置300可降低因電晶體的特性變異而造成的感測電流的誤差。FIG. 3 shows a schematic diagram of a detection device according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 3, the
圖4繪示本發明另一實施例的偵測裝置的概要示意圖。圖5繪示圖4實施例的電壓訊號的波形示意圖。請參考圖1、圖4及圖5,本實施例的偵測裝置400類似於圖1實施例的偵測裝置100,兩者之間主要的差異例如在於補償電路的結構及其操作方式。FIG. 4 is a schematic diagram of a detection device according to another embodiment of the present invention. FIG. 5 is a schematic diagram of the waveform of the voltage signal in the embodiment of FIG. 4 . Please refer to FIG. 1 , FIG. 4 and FIG. 5 , the
具體而言,偵測裝置400包括像素電路110、補償電路420及輸出電路130。關於像素電路110及輸出電路130可參照圖1實施例的說明,底下說明補償電路420。補償電路420可包括電流鏡電路422及/或至少一放大器電路(例如放大器電路424、放大器電路426。放大器電路424及放大器電路426可例如是共源極放大器,但不限於此。此處以兩個放大器電路(即放大器電路424、放大器電路426)為例,但放大器電路的數量不用以限定本發明,可根據需求使用單數或偶數數量的放大器電路。Specifically, the
電流鏡電路422可包括第一端及第二端。電流鏡電路422的第一端可通過信號線220耦接至第三電晶體T3,且接收感測電流Isen。電流鏡電路422例如根據感測電流Isen而產生一鏡射電流Im。根據鏡射電流Im,可使在電流鏡電路422的第二端產生感測電壓Vsen。The
放大器電路424可包括第一端及第二端。放大器電路426包括第一端及第二端。放大器電路424的第一端可耦接至電流鏡電路422的第二端。放大器電路424的第二端可耦接至放大器電路426的第一端。放大器電路426的第二端可例如通過信號線210耦接至第一電晶體T1。在一些實施例中,感測電壓Vsen可經由放大器電路424及放大器電路426以產生調控電壓Vo,此調控電壓Vo例如由放大器電路426的第二端N3輸出,故在重置步驟P1下,可經由將此調控電壓Vo傳輸出至像素電路110來調控像素電路110中之第二電晶體T2的控制端的電壓Vg。The
請再參考圖4及圖5,偵測裝置400的操作步驟包括重置步驟P1、照光積分步驟P2及/或讀出步驟P3。而圖5顯示於上述不同步驟下之重置信號Vrest、第一控制信號V1(提供給第三電晶體T4的控制信號)及第二控制信號V2(提供給第四電晶體T4的控制信號)分別的電壓波形示意圖。在重置步驟P1下,第一電晶體T1及第三電晶體T3例如導通。當第二電晶體T2特性變異時,第二電晶體T2的輸出電流Id會改變。例如,若閾值電壓正飄移,會使輸出電流Id減小。輸出電流Id可作為感測電流Isen,且從像素電路110輸出至補償電路420。在重置步驟P1下,電流鏡電路422可複製此感測電流Isen,且通過放大器電路424及/或放大器電路426。當此感測電流Isen例如經過偶數個放大器電路後,可例如將感測電壓Vsen放大為調控電壓Vo。調控電壓Vo例如可使第二電晶體T2的控制端的電壓Vg上升,以抵銷閾值電壓正飄移的影響,但不限於此。因此,當第二電晶體T2發生特性變異時,可通過調控電壓Vo來調控第二電晶體T2的控制端的電壓Vg,以將第二電晶體T2的輸出電流Id初始化,降低第二電晶體T2因特性變異而輸出差異太大的輸出電流Id。因此,偵測裝置400可降低因電晶體的特性變異而造成的感測電流的誤差。Please refer to FIG. 4 and FIG. 5 again, the operation steps of the
在其它實施例(未繪示),補償電路420可包括電流鏡電路422及單數個放大器電路。當第二電晶體T2特性變異時,在重置步驟P1下,舉例若閾值電壓負飄移,會使輸出電流Id變大。輸出電流Id可作為感測電流Isen,且從像素電路110輸出至補償電路420。在重置步驟P1下,電流鏡電路422可複製感測電流Isen,且通過單數個放大器電路後,可例如將感測電壓Vsen縮小為調控電壓Vo。調控電壓Vo例如可使第二電晶體T2的控制端的電壓Vg下降,以抵銷閾值電壓負飄移的影響,但不限於此。因此,當第二電晶體T2發生特性變異時,可通過調控電壓Vo來調控第二電晶體T2的控制端的電壓Vg,以將第二電晶體T2的輸出電流Id初始化,降低第二電晶體T2因特性變異而輸出差異太大的輸出電流Id。另外,本實施例的偵測裝置400在照光積分步驟P2及讀出步驟P3的操作類似於圖1實施例的偵測裝置100,在此不重複說明。In other embodiments (not shown), the
圖6繪示本發明一實施例的偵測裝置的驅動方法的步驟流程圖。請參考圖1、圖4及圖6,本實施例的偵測裝置的驅動方法至少適於圖1、圖4的顯示裝置100、400,但本發明不限於此。以圖1的偵測裝置100為例,在重置步驟P1下,補償電路120可根據對應於感測電流Isen的感測電壓Vsen來調控第二電晶體T2的控制端的電壓Vg。在照光積分步驟P2下,像素電路110可通過光電二極體PD產生感測電流Isen。在讀出步驟P3下,從輸出電路130讀出對應於感測電流Isen的感測電壓Vsen。FIG. 6 is a flow chart showing the steps of the driving method of the detection device according to an embodiment of the present invention. Please refer to FIG. 1 , FIG. 4 and FIG. 6 , the driving method of the detection device in this embodiment is at least suitable for the
另外,本實施例的偵測裝置的驅動方法可在圖1到圖5的實施例中獲得足夠的教示、建議及實施說明,因此不再贅述。In addition, the driving method of the detection device in this embodiment can obtain sufficient teachings, suggestions and implementation descriptions in the embodiments shown in FIG. 1 to FIG. 5 , so details are not repeated here.
綜上所述,在本發明的實施例中,當第二電晶體發生特性變異時,可調控第二電晶體的控制端的電壓,以將第二電晶體的輸出電流初始化,避免第二電晶體因特性變異而輸出差異太大的輸出電流。電流初始化可例如將其設定對應於電晶體的次臨限區(Sub-threshold region)或飽和區(on-region)的電流,但不限於此。因此,補償電路在重置步驟根據對應於感測電流的感測電壓調控第二電晶體的控制端的電壓,可降低偵測裝置因電晶體的特性變異而造成的感測電流的誤差。To sum up, in the embodiment of the present invention, when the characteristics of the second transistor vary, the voltage at the control terminal of the second transistor can be adjusted to initialize the output current of the second transistor, preventing the second transistor from Output currents that vary greatly due to characteristic variation. The current initialization may, for example, be set to a current corresponding to a sub-threshold region or an on-region of the transistor, but is not limited thereto. Therefore, in the reset step, the compensation circuit regulates the voltage of the control terminal of the second transistor according to the sensing voltage corresponding to the sensing current, which can reduce the error of the sensing current caused by the variation of the characteristics of the transistor in the detection device.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.
100、400:偵測裝置
110、110_1、110_2:像素電路
120、420:補償電路
130、130_1、130_2:輸出電路
202:電流電壓轉換器
204:比較器
210、220:訊號線
422:電流鏡電路
424、426:放大器電路
AMP:放大器
Id:輸出電流
Im:鏡射電流
Isen:感測電流
M1:第五電晶體
N1:補償電路的第一端
N2:補償電路的第二端
N3:放大器電路的第二端
P1:重置步驟
P2:照光積分步驟
P3:讀出步驟
PD:光電二極體
R:電阻
T1:第一電晶體
T2:第二電晶體
T3:第三電晶體
T4:第四電晶體
V1:第一控制信號
V2:第二控制信號
Vd:資料電壓
C1、C2:電壓源
Vg:第二電晶體的控制端的電壓
Vo:調控電壓
Vout:輸出電壓
Vramp:外部電壓源
Vsen:感測電壓
Vsw:控制信號
Vrst:重置信號
100, 400:
圖1繪示本發明一實施例的偵測裝置的概要示意圖。 圖2繪示圖1實施例的電壓訊號於各步驟下的波形示意圖。 圖3繪示本發明另一實施例的偵測裝置的概要示意圖。 圖4繪示本發明另一實施例的偵測裝置的概要示意圖。 圖5繪示圖4實施例的電壓訊號於各步驟下的波形示意圖。 圖6繪示本發明一實施例的偵測裝置的驅動方法的步驟流程圖。 FIG. 1 shows a schematic diagram of a detection device according to an embodiment of the present invention. FIG. 2 is a schematic diagram of waveforms of voltage signals in various steps in the embodiment of FIG. 1 . FIG. 3 shows a schematic diagram of a detection device according to another embodiment of the present invention. FIG. 4 is a schematic diagram of a detection device according to another embodiment of the present invention. FIG. 5 is a schematic diagram of waveforms of voltage signals in various steps in the embodiment of FIG. 4 . FIG. 6 is a flow chart showing the steps of the driving method of the detection device according to an embodiment of the present invention.
100:偵測裝置 100: detection device
110:像素電路 110: Pixel circuit
120:補償電路 120: Compensation circuit
130:輸出電路 130: output circuit
202:電流電壓轉換器 202: Current-voltage converter
204:比較器 204: Comparator
210、220:訊號線 210, 220: signal line
AMP:放大器 AMP: Amplifier
Id:輸出電流 Id: output current
Isen:感測電流 Isen: sense current
M1:第五電晶體 M1: fifth transistor
N1:補償電路的第一端 N1: the first end of the compensation circuit
N2:補償電路的第二端 N2: The second end of the compensation circuit
PD:光電二極體 PD: photodiode
R:電阻 R: resistance
T1:第一電晶體 T1: first transistor
T2:第二電晶體 T2: second transistor
T3:第三電晶體 T3: The third transistor
T4:第四電晶體 T4: The fourth transistor
V1:第一控制信號 V1: the first control signal
V2:第二控制信號 V2: Second control signal
Vd:資料電壓 Vd: data voltage
C1、C2:電壓源 C1, C2: voltage source
Vg:第二電晶體的控制端的電壓 Vg: the voltage of the control terminal of the second transistor
Vout:輸出電壓 Vout: output voltage
Vramp:外部電壓源 Vramp: external voltage source
Vsen:感測電壓 Vsen: sensing voltage
Vsw:控制信號 Vsw: control signal
Vrst:重置信號 Vrst: reset signal
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