TWI745014B - Optical sensing circuit and touch display apparatus including the same - Google Patents
Optical sensing circuit and touch display apparatus including the same Download PDFInfo
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本揭示文件有關一種光感測電路和其相關的觸控顯示器,尤指一種能和該觸控顯示器中的畫素電路共用控制訊號的光感測電路。This disclosure relates to a light sensing circuit and its related touch display, in particular to a light sensing circuit that can share control signals with the pixel circuit in the touch display.
有機發光二極體(OLED)畫素電路與內嵌式光感測電路常被共同用於實現行動裝置的觸控顯示器,以得到窄邊框或無邊框的產品外觀,例如市面上常見的具有光學指紋觸控功能的智慧型手機。在現今的顯示器製程中,電晶體的元件特性會隨著所在區域不同而變異,使得有機發光二極體畫素電路與光感測電路皆需要較複雜的控制訊號以補償其元件特性變異。若有機發光二極體畫素電路與光感測電路無法共用控制訊號,而需要在顯示器中為兩者分別設置多組移位暫存器,則不利於縮減顯示器的邊框寬度。Organic light-emitting diode (OLED) pixel circuits and embedded light sensing circuits are often used together to implement touch displays of mobile devices to obtain a narrow or borderless product appearance, such as the common optical devices on the market. A smart phone with fingerprint touch function. In the current display manufacturing process, the device characteristics of the transistor will vary depending on the region, so that the organic light-emitting diode pixel circuit and the light sensing circuit require more complicated control signals to compensate for the variation of the device characteristics. If the organic light emitting diode pixel circuit and the light sensing circuit cannot share the control signal, and it is necessary to provide multiple sets of shift registers for both in the display, it is not conducive to reducing the frame width of the display.
本揭示文件提供一種光感測電路,其包含驅動電晶體、光感測元件、第一電晶體、第二電晶體以及儲存電容。驅動電晶體包含耦接於第一節點的控制端。光感測元件耦接於第一節點,且用於依據接收到的光線產生在第一節點與第一電源端之間流動的感測電流。驅動電晶體用於產生對應於感測電流的驅動電流。第一電晶體用於依據第一控制訊號將驅動電流傳遞至讀取線。第二電晶體用於依據第二控制訊號在第一電晶體導通時將讀取線上的參考電壓傳遞至第一節點。第二電晶體還用於在第一電晶體關斷時與驅動電晶體形成二極體連接以補償驅動電晶體的臨界電壓。儲存電容耦接於第一節點。The present disclosure provides a light sensing circuit, which includes a driving transistor, a light sensing element, a first transistor, a second transistor, and a storage capacitor. The driving transistor includes a control terminal coupled to the first node. The light sensing element is coupled to the first node and used for generating a sensing current flowing between the first node and the first power terminal according to the received light. The driving transistor is used to generate a driving current corresponding to the sensing current. The first transistor is used for transmitting the driving current to the read line according to the first control signal. The second transistor is used for transmitting the reference voltage on the read line to the first node when the first transistor is turned on according to the second control signal. The second transistor is also used to form a diode connection with the driving transistor when the first transistor is turned off to compensate for the critical voltage of the driving transistor. The storage capacitor is coupled to the first node.
本揭示文件提供一種觸控顯示器,其包含多個讀取線、多個畫素電路以及多個光感測電路。每個光感測電路包含驅動電晶體、光感測元件、第一電晶體、第二電晶體以及儲存電容。驅動電晶體包含耦接於第一節點的控制端。光感測元件耦接於第一節點,且用於依據接收到的光線產生在第一節點與第一電源端之間流動的感測電流。驅動電晶體用於產生對應於感測電流的驅動電流。第一電晶體用於依據第一控制訊號將驅動電流傳遞至多個讀取線的其中之一。第二電晶體用於依據第二控制訊號在第一電晶體導通時將多個讀取線的其中之一上的參考電壓傳遞至第一節點。第二電晶體用於還用於在第一電晶體關斷時與驅動電晶體形成二極體連接以補償驅動電晶體的臨界電壓。儲存電容耦接於第一節點。另外,多個畫素電路中的對應多者與多個光感測電路中的對應多者用於接收第一控制訊號與第二控制訊號。The present disclosure provides a touch display, which includes a plurality of read lines, a plurality of pixel circuits, and a plurality of light sensing circuits. Each light sensing circuit includes a driving transistor, a light sensing element, a first transistor, a second transistor, and a storage capacitor. The driving transistor includes a control terminal coupled to the first node. The light sensing element is coupled to the first node and used for generating a sensing current flowing between the first node and the first power terminal according to the received light. The driving transistor is used to generate a driving current corresponding to the sensing current. The first transistor is used for transmitting the driving current to one of the plurality of read lines according to the first control signal. The second transistor is used for transmitting the reference voltage on one of the read lines to the first node when the first transistor is turned on according to the second control signal. The second transistor is also used to form a diode connection with the driving transistor when the first transistor is turned off to compensate for the threshold voltage of the driving transistor. The storage capacitor is coupled to the first node. In addition, the corresponding ones of the plurality of pixel circuits and the corresponding ones of the plurality of light sensing circuits are used to receive the first control signal and the second control signal.
上述多個實施例的優點之一,是光感測電路的感測結果幾乎不會受到元件特性變異的影響。One of the advantages of the above embodiments is that the sensing result of the light sensing circuit is hardly affected by the variation of the element characteristics.
上述多個實施例的另一優點,是觸控顯示器能具有窄邊框。Another advantage of the above embodiments is that the touch display can have a narrow frame.
以下將配合相關圖式來說明本揭示文件的實施例。在圖式中,相同的標號表示相同或類似的元件或方法流程。The embodiments of the present disclosure will be described below in conjunction with related drawings. In the drawings, the same reference numerals indicate the same or similar elements or method flows.
第1圖為依據本揭示文件一實施例的光感測電路100的示意圖。光感測電路100包含驅動電晶體Td、第一電晶體T1、第二電晶體T2、儲存電容C1以及光感測元件PS。光感測元件PS的一端透過第一節點N1耦接於驅動電晶體Td的控制端,其另一端則耦接於第一電源端110,其中第一電源端110用於提供第一工作電壓FVSS。當光感測元件PS未接收到光線時,光感測元件PS會將第一節點N1與第一電源端110維持於開路狀態。另一方面,當光感測元件PS被光線照射時,光感測元件PS會產生在第一節點N1與第一電源端110之間流動的感測電流Is,例如由第一節點N1流向第一電源端110。FIG. 1 is a schematic diagram of a
驅動電晶體Td、第一電晶體T1與第二電晶體T2各自包含第一端、第二端與控制端。驅動電晶體Td的第一端與第二端分別耦接於第二電源端120與第二節點N2,其中第二電源端用於提供第二工作電壓FVDD,且第二工作電壓FVDD高於第一工作電壓FVSS。驅動電晶體Td的控制端耦接於第一節點N1,且驅動電晶體Td用於依據其控制端的電壓(以下代稱為控制端電壓Vg)產生對應大小的驅動電流Id。換言之,驅動電晶體Td用於產生對應於感測電流Is的驅動電流Id,亦即驅動電晶體Td用於放大感測電流Is。The driving transistor Td, the first transistor T1 and the second transistor T2 each include a first terminal, a second terminal and a control terminal. The first terminal and the second terminal of the driving transistor Td are respectively coupled to the
第一電晶體T1的第一端與第二端分別耦接於讀取線101[m]與第二節點N2,第一電晶體T1的控制端則用於接收第一控制訊號S1[n]。讀取線101[m]用於將驅動電流Id傳遞至外部的讀取電路(例如第5圖的讀取電路530[m])。在一些實施例中,讀取電路可以將驅動電流Id積分、類比數位轉換及/或訊號放大。第一電晶體T1還用於將讀取線101[m]上的參考電壓Vbias傳遞至光感測電路100內部以重置各節點之電壓。The first terminal and the second terminal of the first transistor T1 are respectively coupled to the read line 101[m] and the second node N2, and the control terminal of the first transistor T1 is used to receive the first control signal S1[n] . The reading line 101 [m] is used to transmit the driving current Id to an external reading circuit (for example, the reading circuit 530 [m] in FIG. 5). In some embodiments, the reading circuit can integrate the driving current Id, convert analog to digital, and/or amplify the signal. The first transistor T1 is also used to transfer the reference voltage Vbias on the read line 101 [m] to the inside of the
第二電晶體T2的第一端和第二端分別耦接於第二節點N2與第一節點N1,第二電晶體T2的控制端則用於接收第二控制訊號S2[n]。第二電晶體T2用於與第一電晶體T1一同重置各節點電壓。另外,第二電晶體T2還用於與驅動電晶體Td形成二極體連接(Diode Connection)以補償驅動電晶體Td的臨界電壓。The first terminal and the second terminal of the second transistor T2 are respectively coupled to the second node N2 and the first node N1, and the control terminal of the second transistor T2 is used to receive the second control signal S2[n]. The second transistor T2 is used to reset the voltage of each node together with the first transistor T1. In addition, the second transistor T2 is also used to form a diode connection with the driving transistor Td to compensate for the threshold voltage of the driving transistor Td.
另外,儲存電容C1耦接於第一節點N1與第二電源端120之間。在一些實施例中,藉由結合光感測電路100形成的陣列與多個有機發光二極體(OLED)畫素電路,可以實現具有螢幕內光學指紋感測功能的顯示器。在一些實施例中,光感測元件PS可以由二極體連接形式的電晶體來實現,或是由光電二極體來實現。In addition, the storage capacitor C1 is coupled between the first node N1 and the
第2圖為第一控制訊號S1[n]與第二控制訊號S2[n]簡化後的波形示意圖。如第2圖所示,光感測電路100在一圖框時間中的運作包含重置階段210-1、補償階段220-1、感測階段230-1與輸出階段240-1。請同時參考第2圖與第3A圖,在重置階段210-1中,第一控制訊號S1[n]與第二控制訊號S2[n]皆具有邏輯高準位(Logic High Level,例如足以導通P型電晶體的低電壓)。因此,驅動電晶體Td、第一電晶體T1與第二電晶體T2會導通,第二電晶體T2會將參考電壓Vbias傳遞至第一節點N1,使得控制端電壓Vg實質上等於參考電壓Vbias。
Figure 2 is a simplified waveform diagram of the first control signal S1[n] and the second control signal S2[n]. As shown in FIG. 2, the operation of the
接著,請同時參考第2圖與第3B圖,在補償階段220-1中,第一控制訊號S1[n]具有邏輯低準位(例如足以使P型電晶體關斷的高電壓),而第二控制訊號S2[n]具有邏輯高準位。因此,第一電晶體T1會關斷而第二電晶體T2會導通。此時,驅動電晶體Td和第二電晶體T2形成二極體連接,使得控制端電壓Vg在補償階段220-1結束時可以實質上以下列的《公式1》表示,其中符號「Vth」代表驅動電晶體Td的臨界電壓。 Next, please refer to Figure 2 and Figure 3B at the same time. In the compensation phase 220-1, the first control signal S1[n] has a logic low level (for example, a high voltage enough to turn off the P-type transistor), and The second control signal S2[n] has a logic high level. Therefore, the first transistor T1 will be turned off and the second transistor T2 will be turned on. At this time, the driving transistor Td and the second transistor T2 form a diode connection, so that the control terminal voltage Vg at the end of the compensation phase 220-1 can be substantially represented by the following "Equation 1", where the symbol "Vth" represents The threshold voltage for driving the transistor Td.
Vg=FVDD-|Vth| 《公式1》 Vg = FVDD -| Vth | "Formula 1"
請同時參考第2圖與第3C圖,在感測階段230-1中,第一控制訊號S1[n]與第二控制訊號S2[n]皆具有邏輯低準位,使得第一電晶體T1與第二電晶體T2皆關斷。 在此情況下,若光感測元件PS接收到光線,則光感測元件PS會產生感測電流Is,使得控制端電壓Vg產生變化而可以由以下的《公式2》表示,其中符號「△Vsig」代表控制端電壓Vg在感測階段230-1中的變化量。 Please refer to Figure 2 and Figure 3C at the same time. In the sensing phase 230-1, the first control signal S1[n] and the second control signal S2[n] both have a logic low level, so that the first transistor T1 Both and the second transistor T2 are turned off. In this case, if the light sensing element PS receives light, the light sensing element PS will generate a sensing current Is, causing the control terminal voltage Vg to change, which can be represented by the following "Equation 2", where the symbol "△ "Vsig" represents the amount of change in the control terminal voltage Vg in the sensing phase 230-1.
Vg=FVDD-|Vth|-△Vsig 《公式2》 Vg = FVDD -| Vth |-△ Vsig 《Formula 2》
接著,請同時參考第2圖與第3D圖,在輸出階段240-1,第一控制訊號S1[n]具有邏輯高準位而第二控制訊號S2[n]具有邏輯低準位,使得第一電晶體T1導通而第二電晶體T2關斷。在此情況下,驅動電晶體Td會產生對應於控制端電壓Vg的驅動電流Id,且驅動電流Id會透過第一電晶體T1輸出至讀取線110[m]。驅動電流Id的大小可以由以下的《公式3》表示,其中符號「k」代表驅動電晶體Td的載子遷移率(carrier mobility)、閘極氧化層的單位電容大小以及閘極寬長比三者的乘積。 Next, please refer to Figure 2 and Figure 3D at the same time. In the output stage 240-1, the first control signal S1[n] has a logic high level and the second control signal S2[n] has a logic low level, so that the first control signal S1[n] has a logic low level. One transistor T1 is turned on and the second transistor T2 is turned off. In this case, the driving transistor Td will generate a driving current Id corresponding to the control terminal voltage Vg, and the driving current Id will be output to the read line 110 [m] through the first transistor T1. The size of the driving current Id can be represented by the following "Equation 3", where the symbol "k" represents the carrier mobility of the driving transistor Td, the unit capacitance of the gate oxide layer, and the gate width-to-length ratio. The product of those.
在輸出階段240-1結束後,光感測電路100可以依照上述的流程重複執行相似的操作,例如光感測電路100可以執行另一次的重置階段210-2,在此不再贅述。由《公式3》可知,驅動電流Id幾乎不會受到光感測電路100的元件變異影響,因而能精準反應光感測元件PS接收到的光線強度。
After the output stage 240-1 ends, the
第4圖為依據本揭示文件一實施例的光感測電路
400的示意圖。光感測電路400相似於光感測電路100,差異在於,光感測電路400還包含第三電晶體T3,且儲存電容C1是耦接於第一節點N1與第三電晶體T3之間。詳細而言,第三電晶體T3的第一端耦接於第二電源端120,第三電晶體T3的第二端則透過第三節點N3耦接於儲存電容C1與光感測元件PS。另外,第三電晶體T3的控制端用於接收第二控制訊號S2[n]。
Figure 4 is a light sensing circuit according to an embodiment of the
前述第2圖中第一控制訊號S1[n]與第二控制訊號S2[n]的波形亦適用於光感測電路400。因此,第三節點N3會於重置階段210-1被設為第二工作電壓FVDD。若光感測元件PS於感測階段230-1中接收到光線,則光感測元件PS會產生於第三節點N3與第一電源端110之間流動的感測電流Is,例如由第三節點N3流向第一電源端110。前述光感測電路100的其餘對應運作、元件、連接方式與優點,皆適用於光感測電路400,為簡潔起見,在此不重複贅述。
The waveforms of the first control signal S1[n] and the second control signal S2[n] described in the second figure are also applicable to the
在一些實施例中,第三電晶體T3的第一端可以不耦接於第二電源端120,而是用於接收不同於第二工作電壓FVDD的另一重置電壓。
In some embodiments, the first terminal of the third transistor T3 may not be coupled to the
上述多個實施例中,光感測電路100與400的電晶體可以由各種合適的P型電晶體來實現,但本揭示文件不以此為限。若將第2圖中的第一控制訊號S1[n]與第二控制訊號S2[n]各自轉換為具有相反波形,則光感測電路100與400的電晶體也可以由各種合適的N型電晶體來實
現。
In the above-mentioned multiple embodiments, the transistors of the
第5圖為依據本揭示文件一實施例的觸控顯示器500簡化後的功能方塊圖。觸控顯示器500包含多個光感測電路100、多個畫素電路PX、第一移位暫存器510、第二移位暫存器520、多個讀取電路以及多個讀取線,其中多個讀取電路分別耦接於多個讀取線。多個光感測電路100排列為具有多行(column)與多列(row)的矩陣,且多個畫素電路PX也排列為具有多行與多列的矩陣。位於同一列的光感測電路100與畫素電路PX可以共用控制訊號,且位於同一行的光感測電路100會透過多個讀取線的其中之一(例如讀取線101[m])耦接於多個讀取電路的其中之一(例如讀取電路530[m])。為方便說明,第5圖僅繪示了位於同一列的一個光感測電路100與一個畫素電路PX,以及對應的一個讀取線101[m]與一個讀取電路530[m]。
FIG. 5 is a simplified functional block diagram of the
畫素電路PX包含第三電晶體T3、第四電晶體T4、第五電晶體T5、第六電晶體T6、第七電晶體T7、第八電晶體T8、第九電晶體T9、儲存電容C2以及發光元件LE。第八電晶體T8的控制端用於接收第一控制訊號S1[n],且第五電晶體T5、第六電晶體T6與第九電晶體T9的控制端用於接收第二控制訊號S2[n]。另外,第四電晶體與第七電晶體T7的控制端用於接收第三控制訊號EM[n]。在一些實施例中,第三控制訊號EM[n]在第2圖的感測階段230-1中具有邏輯高準位,且於重置階段210-1、補償 階段220-1與輸出階段240-1中具有邏輯低準位。 The pixel circuit PX includes the third transistor T3, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6, the seventh transistor T7, the eighth transistor T8, the ninth transistor T9, and the storage capacitor C2 And the light-emitting element LE. The control terminal of the eighth transistor T8 is used to receive the first control signal S1[n], and the control terminals of the fifth transistor T5, the sixth transistor T6, and the ninth transistor T9 are used to receive the second control signal S2[ n]. In addition, the control ends of the fourth transistor and the seventh transistor T7 are used to receive the third control signal EM[n]. In some embodiments, the third control signal EM[n] has a logic high level in the sensing phase 230-1 of FIG. 2, and in the reset phase 210-1, compensation There are logic low levels in the phase 220-1 and the output phase 240-1.
畫素電路PX可依據第一控制訊號S1[n]與第二控制訊號S2[n]進行節點電壓重置與臨界電壓補償的相關操作,並依據第三控制訊號EM[n]決定發光單元LE的發光時機。另外,畫素電路PX接收第三工作電壓OVDD與第四工作電壓OVSS以產生驅動發光單元LE的電流,並依據資料電壓Vdata與參考電壓Vref決定發光單元LE的亮度。在一些實施例中,發光單元LE可以由有機發光二極體或微發光二極體(Micro LED)來實現。相關內容為所屬技術領域中具有通常知識者所習知,為簡潔起見,在此不再贅述。 The pixel circuit PX can perform related operations of node voltage reset and threshold voltage compensation according to the first control signal S1[n] and the second control signal S2[n], and determine the light-emitting unit LE according to the third control signal EM[n] The timing of the light. In addition, the pixel circuit PX receives the third operating voltage OVDD and the fourth operating voltage OVSS to generate a current for driving the light-emitting unit LE, and determines the brightness of the light-emitting unit LE according to the data voltage Vdata and the reference voltage Vref. In some embodiments, the light emitting unit LE may be realized by an organic light emitting diode or a micro light emitting diode (Micro LED). The relevant content is known by those with ordinary knowledge in the relevant technical field, and for the sake of brevity, it will not be repeated here.
由第5圖可知,驅動電流Id會經由讀取線101[m]傳遞至讀取電路530[m]。詳細而言,讀取電路530[m]至少包含一積分電路,且積分電路包含一放大器532。放大器532包含第一端(例如反相輸入端)、第二端(例如非反向輸入端)與輸出端。放大器532的第一端耦接於讀取線101[m]以接收驅動電流Id。放大器532的第二端用於接收參考電壓Vbias。透過放大器532的第一端與第二端之間的虛短路(Virtual Ground)特性,參考電壓Vbias會由放大器532的第二端鏡射至第一端,而使讀取線101[m]上的電壓實質上維持於參考電壓Vbias。放大器532的輸出端提供對應於驅動電流Id的輸出電壓Vout至其他後級電路,例如類比數位轉換電路。
It can be seen from FIG. 5 that the driving current Id is transmitted to the reading circuit 530 [m] via the reading line 101 [m]. In detail, the reading circuit 530 [m] includes at least one integrating circuit, and the integrating circuit includes an
如第5圖所示,第一移位暫存器510產生的第一
控制訊號S1[n]與第二控制訊號S2[n]可為位於同一列的光感測電路100與畫素電路PX所共用,而第二移位暫存器520用於產生第三控制訊號EM[n]。因此,觸控顯示器500無須為了光感測電路100額外設置其他的移位暫存器,有助於減少觸控顯示器500的邊框寬度。
As shown in Figure 5, the
在一些實施例中,觸控顯示器500中的多個光感測電路100可以置換為光感測電路400。在此情況下,位於同一列的光感測電路400與畫素電路PX仍可以共用第一控制訊號S1[n]與第二控制訊號S2[n]。因此,觸控顯示器500仍具有與前述內容相似的運作方式以及優點,為簡潔起見,在此不重複贅述。
In some embodiments, the multiple
在說明書及申請專利範圍中使用了某些詞彙來指稱特定的元件。然而,所屬技術領域中具有通常知識者應可理解,同樣的元件可能會用不同的名詞來稱呼。說明書及申請專利範圍並不以名稱的差異做為區分元件的方式,而是以元件在功能上的差異來做為區分的基準。在說明書及申請專利範圍所提及的「包含」為開放式的用語,故應解釋成「包含但不限定於」。另外,「耦接」在此包含任何直接及間接的連接手段。因此,若文中描述第一元件耦接於第二元件,則代表第一元件可通過電性連接或無線傳輸、光學傳輸等信號連接方式而直接地連接於第二元件,或者通過其他元件或連接手段間接地電性或信號連接至該第二元件。 In the specification and the scope of the patent application, certain words are used to refer to specific elements. However, those with ordinary knowledge in the technical field should understand that the same element may be called by different terms. The specification and the scope of patent application do not use the difference in names as a way of distinguishing components, but the difference in function of the components as the basis for distinguishing. The "including" mentioned in the specification and the scope of the patent application is an open term, so it should be interpreted as "including but not limited to". In addition, "coupling" here includes any direct and indirect connection means. Therefore, if it is described in the text that the first element is coupled to the second element, it means that the first element can be directly connected to the second element through electrical connection, wireless transmission, optical transmission, or other signal connection methods, or through other elements or connections. The means is indirectly connected to the second element electrically or signally.
在此所使用的「及/或」的描述方式,包含所列舉 的其中之一或多個項目的任意組合。另外,除非說明書中特別指明,否則任何單數格的用語都同時包含複數格的涵義。 The description of "and/or" used here includes the enumerated Any combination of one or more of the items. In addition, unless otherwise specified in the specification, any term in the singular case also includes the meaning of the plural case.
以上僅為本揭示文件的較佳實施例,凡依本揭示文件請求項所做的均等變化與修飾,皆應屬本揭示文件的涵蓋範圍。 The above are only preferred embodiments of the present disclosure, and all equal changes and modifications made in accordance with the requirements of the present disclosure should fall within the scope of the disclosure.
100,400:光感測電路 100, 400: light sensing circuit
101[m]:讀取線 101[m]: Reading line
110:第一電源端 110: The first power supply terminal
120:第二電源端 120: second power terminal
Td:驅動電晶體 Td: drive transistor
T1:第一電晶體 T1: The first transistor
T2:第二電晶體 T2: second transistor
T3:第三電晶體 T3: third transistor
T4:第四電晶體 T4: The fourth transistor
T5:第五電晶體 T5: fifth transistor
T6:第六電晶體 T6: sixth transistor
T7:第七電晶體 T7: seventh transistor
T8:第八電晶體 T8: Eighth Transistor
T9:第九電晶體 T9: Ninth Transistor
PS:光感測元件 PS: light sensing element
C1,C2:儲存電容 C1, C2: storage capacitor
N1:第一節點 N1: the first node
N2:第二節點 N2: second node
N3:第二節點 N3: second node
LE:發光元件 LE: Light-emitting element
S1[n]:第一控制訊號 S1[n]: The first control signal
S2[n]:第二控制訊號 S2[n]: The second control signal
EM[n]:第三控制訊號 EM[n]: The third control signal
Id:驅動電流 Id: drive current
Is:感測電流 Is: sense current
FVSS:第一工作電壓 FVSS: first working voltage
FVDD:第二工作電壓 FVDD: second working voltage
OVDD:第三工作電壓 OVDD: third working voltage
OVSS:第四工作電壓 OVSS: Fourth working voltage
Vbias,Vref:參考電壓 Vbias, Vref: reference voltage
Vg:控制端電壓 Vg: Control terminal voltage
210-1,210-2:重置階段 210-1, 210-2: Reset phase
220-1:補償階段 220-1: Compensation phase
230-1:感測階段 230-1: Sensing phase
240-1:輸出階段 240-1: output stage
500:觸控顯示器 500: Touch display
510:第一移位暫存器 510: first shift register
520:第二移位暫存器 520: Second shift register
530[m]:讀取電路 530[m]: Reading circuit
532:放大器 532: Amplifier
Vout:輸出電壓 Vout: output voltage
第1圖為依據本揭示文件一實施例的光感測電路的示意圖。 第2圖為第一控制訊號與第二控制訊號簡化後的波形示意圖。 第3A圖為第1圖的光感測電路於重置階段的等效電路操作示意圖。 第3B圖為第1圖的光感測電路於補償階段的等效電路操作示意圖。 第3C圖為第1圖的光感測電路於感測階段的等效電路操作示意圖。 第3D圖為第1圖的光感測電路於輸出階段的等效電路操作示意圖。 第4圖為依據本揭示文件一實施例的光感測電路的示意圖。 第5圖為依據本揭示文件一實施例的觸控顯示器簡化後的功能方塊圖。 FIG. 1 is a schematic diagram of a light sensing circuit according to an embodiment of the present disclosure. Figure 2 is a simplified waveform diagram of the first control signal and the second control signal. FIG. 3A is a schematic diagram of the equivalent circuit operation of the photo sensing circuit of FIG. 1 in the reset stage. FIG. 3B is a schematic diagram of the equivalent circuit operation of the photo sensing circuit of FIG. 1 in the compensation stage. FIG. 3C is a schematic diagram of the equivalent circuit operation of the photo-sensing circuit of FIG. 1 in the sensing phase. FIG. 3D is a schematic diagram of the equivalent circuit operation of the light sensing circuit of FIG. 1 in the output stage. FIG. 4 is a schematic diagram of a light sensing circuit according to an embodiment of the present disclosure. FIG. 5 is a simplified functional block diagram of the touch display according to an embodiment of the present disclosure.
100:光感測電路 100: light sensing circuit
101[m]:讀取線 101[m]: Reading line
110:第一電源端 110: The first power supply terminal
120:第二電源端 120: second power terminal
Td:驅動電晶體 Td: drive transistor
T1:第一電晶體 T1: The first transistor
T2:第二電晶體 T2: second transistor
PS:光感測元件 PS: light sensing element
C1:儲存電容 C1: storage capacitor
N1:第一節點 N1: the first node
N2:第二節點 N2: second node
S1[n]:第一控制訊號 S1[n]: The first control signal
S2[n]:第二控制訊號 S2[n]: The second control signal
Id:驅動電流 Id: drive current
Is:感測電流 Is: sense current
FVSS:第一工作電壓 FVSS: first working voltage
FVDD:第二工作電壓 FVDD: second working voltage
Vbias:參考電壓 Vbias: Reference voltage
Vg:控制端電壓 Vg: Control terminal voltage
Claims (11)
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TWI815657B (en) * | 2022-09-13 | 2023-09-11 | 友達光電股份有限公司 | Touch sensing device |
TWI818744B (en) * | 2022-09-26 | 2023-10-11 | 友達光電股份有限公司 | Fingerprint sensing circuit and display panel |
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